KR20210055600A - Deposition apparatus, and manufacturing method of display device - Google Patents

Abstract

An object of the present invention is to provide a deposition device capable of reducing the time needed for controlling the gap between a substrate and a deposition mask and a manufacturing method of a display device and to provide a deposition device capable of reducing defects in a deposition process and a manufacturing method of a display device. The manufacturing method of a display device obtained by depositing an organic material on a substrate using a deposition mask comprises: arranging a deposition mask facing a substrate; detecting a first gap (l1) between the substrate and the deposition mask in a first position; detecting a second gap (l2) between the substrate and the deposition mask in a second position; and controlling the first gap (l1) and the second gap (l2) to satisfy Formula 3.

Description

Deposition apparatus and manufacturing method of display apparatus {DEPOSITION APPARATUS, AND MANUFACTURING METHOD OF DISPLAY DEVICE}

One embodiment of the present invention relates to a vapor deposition apparatus. In addition, one embodiment of the present invention relates to a method of manufacturing a display device using a vapor deposition device.

As a display device, an organic electroluminescence display is known in which an organic electroluminescence material (organic EL material) is used for a light emitting element (organic EL element) in a display area. The organic EL display device is a so-called self-luminous display device that realizes display by emitting an organic EL material.

The organic EL element contains an organic EL material between an anode (anode) and a cathode (cathode). As the organic EL material, a low-molecular material or a high-molecular material is known, but a low-molecular material capable of forming a thin film by a vapor deposition method is often used.

As one of the evaporation apparatuses used in the evaporation method, a vertical evaporation apparatus in which a substrate is erected and disposed in a evaporation apparatus is known (see, for example, Patent Document 1 and Patent Document 2). The vertical vapor deposition apparatus has an advantage in that the area occupied by the evaporation apparatus can be reduced compared to the horizontal evaporation apparatus because a large substrate is erected and processed.

Japanese Patent Application Publication No. 2012-84544 Japanese Patent Publication No. 2014-70239

In a vertical vapor deposition apparatus, unlike a horizontal vapor deposition apparatus, a substrate and a vapor deposition mask are arranged vertically (vertical direction, gravity direction). Therefore, the vertical vapor deposition apparatus has a problem different from that of the horizontal vapor deposition apparatus. For example, in the alignment of the substrate and the evaporation mask, the evaporation mask is attracted to the substrate by using magnetic force, but in the case of a horizontal evaporation apparatus, the direction of the magnetic force and the direction of gravity are identical, so The effect of gravity is small. On the other hand, in the case of a vertical vapor deposition apparatus, since the direction of magnetic force and the direction of gravity are different, positional displacement due to the influence of gravity occurs. When the substrate is enlarged, the amount of positional displacement in alignment becomes remarkable.

The present inventors, as a result of intensive research, found that in a vertical vapor deposition apparatus, there is a correlation between the distance (gap) and positional displacement between the substrate and the vapor deposition mask before the alignment of the substrate and the vapor deposition mask. Further, the present inventors have found that by controlling the gap between the substrate and the evaporation mask, defects due to position shift in the vertical evaporation apparatus can be reduced.

In the horizontal vapor deposition apparatus, even if the gap between the substrate and the vapor deposition mask is manually adjusted, the positional shift can be sufficiently adjusted. However, in the case of manually adjusting the gap between the substrate and the vapor deposition mask in the vertical vapor deposition apparatus, it is difficult to adjust the gap for each substrate because fine adjustment is required many times and takes too much time.

In view of the above problems, an object of the present invention is to provide a deposition apparatus and a method of manufacturing a display device in which the time required for adjusting a gap between a substrate and a deposition mask is shortened. In addition, one of the objects of the present invention is to provide a method for manufacturing a vapor deposition device and a display device in which defects in the vapor deposition process are reduced.

A method of manufacturing a display device according to an embodiment of the present invention is a method of manufacturing a display device in which an organic material is deposited on a substrate using a deposition mask, and a deposition mask is disposed opposite the substrate, and at a first position _{To detect a first gap (l 1} ) between the substrate and the deposition mask _{, and to detect a second gap (l 2} ) between the substrate and the deposition mask at a second position, and satisfy Equation 3, the first The gap (l ₁ ) and the second gap (l ₂ ) are adjusted.

In addition, the vapor deposition apparatus according to an embodiment of the present invention includes a means for arranging a vapor deposition mask facing a substrate, and a first gap (l ₁ ) for detecting a first gap between the substrate and the vapor deposition mask at a first position. A detection unit, a second detection unit for detecting a second gap l ₂ between the substrate and the deposition mask at the second position, a first adjustment unit for adjusting the first gap l _{1, and a second gap l 2} ), and the first adjustment unit and the second adjustment unit adjust the first gap l ₁ and the second gap l ₂ so as to satisfy Equation 9.

_{Here, L 12} in Expressions 3 and 9 is a distance between the first position and the second position.

In addition, a method of manufacturing a display device according to an embodiment of the present invention is a method of manufacturing a display device in which an organic material is deposited on a substrate using a deposition mask, and a deposition mask is disposed opposite the substrate, and the substrate and the deposition mask are Is arranged in a direction in which each opposing surface crosses the vertical direction, detects a first gap between the substrate and the deposition mask at the first position, and detects a first gap between the substrate and the deposition mask at the second position. The second gap is detected, and the first position and the second position are simultaneously adjusted so that the difference between the first gap and the second gap becomes small.

In addition, a vapor deposition apparatus according to an embodiment of the present invention includes means for arranging a vapor deposition mask facing a substrate, and arranging the substrate and the vapor deposition mask in a direction in which the facing surface crosses the vertical direction, A first detection unit that detects a first gap between the substrate and the deposition mask at the first position, a second detection unit that detects a second gap between the substrate and the deposition mask at the second position, and the first gap are adjusted. And a second adjustment unit for adjusting the second gap, and the first adjustment unit and the second adjustment unit simultaneously adjust the first position and the second position so that the difference between the first gap and the second gap decreases. do.

1A is a front view of a vapor deposition mask used in the vapor deposition apparatus according to the first embodiment.
1B is a cross-sectional view of a vapor deposition mask used in the vapor deposition apparatus according to the first embodiment.
1C is a partially enlarged view of a vapor deposition mask used in the vapor deposition apparatus according to the first embodiment.
Fig. 2A is a schematic diagram showing a state performed in the vapor deposition apparatus according to the first embodiment before the position of the vapor deposition mask with respect to the substrate is fixed.
Fig. 2B is a schematic diagram showing a state after the position of a vapor deposition mask with respect to the substrate is fixed in the vapor deposition apparatus according to the first embodiment.
3 is a graph showing a correlation between a Δ gap and a yield in a vapor deposition step with respect to the number of depositions in the first embodiment.
4 is a schematic cross-sectional view of the vapor deposition apparatus according to the first embodiment.
5 is a schematic plan view of the vapor deposition apparatus according to the first embodiment.
6 is a flowchart of a vapor deposition step in a method for manufacturing a display device according to a second embodiment.
7 is a schematic diagram of a display device according to a second embodiment.
8 is a circuit diagram of a pixel of a display device according to a second embodiment.
9 is a cross-sectional view of a pixel of a display device according to a second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in various aspects within a range not departing from the gist of the present invention, and is not interpreted as being limited to the description of the embodiments exemplified below. In the drawings, in order to make the description more clear, compared to the actual mode, in some cases, the width, thickness, shape, etc. of each part are schematically expressed, but it is only an example and does not limit the interpretation of the present invention. In the present specification and each of the drawings, elements having the same functions as those described with respect to the drawings that have already appeared are denoted by the same reference numerals, and redundant descriptions may be omitted.

In the present specification and claims, "upper" and "lower" refer to a relative positional relationship based on the surface of the substrate on the side on which the light emitting element is formed (hereinafter, simply referred to as "surface"). For example, in this specification, the direction from the surface of the substrate toward the light emitting element is referred to as "top", and the opposite direction is referred to as "bottom". In addition, in the present specification and claims, when expressing the aspect of arranging another structure on a certain structure, when simply ``on'' is indicated, unless otherwise noted, another structure immediately above the other structure so as to be in contact with a certain structure. It is assumed that both the case of disposing a structure and the case of disposing another structure through another structure above a certain structure are included.

<First embodiment>

A vapor deposition apparatus 100 according to an embodiment of the present invention will be described with reference to FIGS. 1A to 5.

First, the vapor deposition mask 200 used in the vapor deposition apparatus 100 according to the present embodiment will be described.

[Deposition mask]

1A is a front view of the vapor deposition mask 200. In addition, FIG. 1B is a cross-sectional view of the deposition mask 200 taken along line A-A' shown in FIG. 1A. In addition, FIG. 1C is a partially enlarged view in which the area B shown in FIG. 1A is enlarged.

1A and 1B, the vapor deposition mask 200 includes a mask frame 210 and a metal mask 220. The central portion of the mask frame 210 is opened in a rectangular shape, and a metal mask 220 is provided to cover the opening. That is, the outer periphery of the metal mask 220 is fixed to the mask frame 210.

The metal mask 220 may be fixed by welding to the mask frame 210, or may be fixed with an adhesive. When fixing the metal mask 220 to the mask frame 210 with an adhesive, it is preferable to use an epoxy-based heat-resistant adhesive.

In addition, as shown in FIG. 1C, the metal mask 220 is provided with a plurality of openings 230. The evaporation material passing through the openings 230 is deposited on the substrate 300 (see FIG. 2A ), and a pattern of the openings 230 is formed on the substrate 300. The pattern of the opening 230 may correspond to an arrangement pattern of pixels on the substrate 300, or may be an arrangement pattern of some of the pixels on the substrate 300. As a pattern of the opening 230, it can be provided in a matrix shape or a zigzag shape, for example.

The mask frame 210 is preferably made of a rigid material so that deformation does not occur in the deposition mask 200 in order to support the metal mask 220. The rigid material is, for example, stainless steel (SUS), iron nickel alloy, or aluminum alloy.

The thickness of the mask frame 210 is not particularly limited, but is, for example, 5 mm or more and 100 mm or less. The mask frame 210 may be composed of a plurality of structures. When the thickness of the mask frame 210 is small, since the rigidity of the mask frame 210 decreases, deformation is likely to occur. On the other hand, when the thickness of the mask frame 210 is large, the weight of the evaporation mask 200 increases, so that handling of the evaporation mask 200 in the evaporation apparatus 100 becomes difficult. Therefore, the thickness of the mask frame 210 is preferably within the above range.

The metal mask 220 is preferably made of a material having good processability so that a plurality of openings 230 are provided. As the material of the metal mask 220, for example, stainless steel, nickel material, iron nickel alloy, aluminum alloy, or the like can be used. In addition, when a fine opening 230 is required, such as a pixel pattern of a light emitting layer of an organic EL device, the position of the metal mask 220 is fixed by being attracted to the substrate 300 using magnetic force. Therefore, it is preferable that the material of the metal mask 220 contains a magnetic material. The magnetic material is, for example, pure iron, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKS steel, CuNiCo steel, or Al-Fe alloy. Further, a magnetic material may be applied to the surface of the metal mask 220.

The thickness of the metal mask 220 is not particularly limited, but is, for example, 100 µm or less, and preferably 2 µm or more and 10 µm or less. When the thickness of the metal mask 220 is small, since the rigidity is weakened, the metal mask 220 is liable to be broken. In addition, when the thickness of the metal mask 220 is small, deformation of the metal mask 220 due to radiant heat during deposition is likely to occur. On the other hand, when the thickness of the metal mask 220 is large, since the height of the sidewall of the opening 230 increases, a phenomenon in which the evaporation material is difficult to enter into the opening 230 (a shadow effect) occurs. Therefore, the thickness of the metal mask 220 is preferably within the above range.

The evaporation apparatus 100 is a so-called vertical evaporation apparatus, and the evaporation mask 200 is arranged vertically (vertical direction, gravity direction). When the shape of the evaporation mask 200 is a rectangle having a pair of long sides and a pair of short sides, the evaporation mask 200 may be arranged with the long sides erected or the short sides erected. In addition, the vertical direction (vertical direction, gravitational direction) is not limited to a direction perpendicular to the ground plane of the vapor deposition apparatus 100, and includes a direction substantially vertical. Further, the vapor deposition mask 200 of the vapor deposition apparatus 100 may be disposed inclined with respect to the longitudinal direction. When the vapor deposition mask 200 is inclined, the angle of inclination with respect to the longitudinal direction is, for example, 0° or more and 30° or less.

Next, in the evaporation apparatus 100, the fixing of the position of the evaporation mask 200 with respect to the substrate 300, which is performed before evaporation, will be described.

[Fixing the position of the deposition mask on the substrate]

2A is a schematic diagram showing a state before the position of the deposition mask 200 with respect to the substrate 300 is fixed. In addition, FIG. 2B is a schematic diagram showing a state after the position of the deposition mask 200 with respect to the substrate 300 is fixed.

2A and 2B, a mask frame 210 and a metal mask 220 of the deposition mask 200, a substrate 300, and a support part 120 and a magnet part 170 that are part of the deposition apparatus 100 are shown. Is shown. The board|substrate 300 is supported by the support part 120, and is arrange|positioned upright in a vertical direction. In addition, the vapor deposition mask 200 is also arranged vertically in the same manner as the substrate 300. In addition, the deposition mask 200 and the substrate 300 are disposed to be spaced apart to have a predetermined interval, and the interval is set to a gap l.

The magnet part 170 is provided to face the vapor deposition mask 200 and the substrate 300 with the support part 120 therebetween. In other words, the magnet part 170 is located on the side opposite to the side on which the deposition mask 200 and the substrate 300 are disposed with respect to the support part 120.

As shown in FIG. 2A, when the magnet part 170 is spaced apart from the support part 120, the distance (gap l) between the deposition mask 200 and the substrate 300 is maintained at a constant value. On the other hand, as shown in FIG. 2B, when the magnet part 170 approaches the support part 120, the metal mask 220 is attracted by the magnetic force of the magnet part 170, and the deposition mask 200 and the substrate 300 ) Narrows the gap (gap l), and finally, the metal mask 220 of the deposition mask 200 comes into contact with a part of the substrate 300, so that the position of the deposition mask 200 with respect to the substrate 300 is It is fixed. Thereafter, evaporation of the evaporation material is performed, and a film having a pattern corresponding to the pattern of the evaporation mask 200 is formed on the substrate 300. In addition, the deposition process includes fixing and depositing a position of the deposition mask 200 with respect to the substrate 300, and alignment (alignment) of the pattern of the deposition mask 200.

3 is a graph showing the correlation between the Δ gap and the yield in the vapor deposition step with respect to the number of depositions. Here, the Δgap refers to the difference _{between the maximum gap l max} and the minimum gap l _min among the distances (gap l) between the substrate 300 and the deposition mask 200 at each of a plurality of positions in the substrate 300 . In addition, the yield in the evaporation process refers to a good quality rate of a product (for example, a display device) in the evaporation process from which defective products resulting from the evaporation process have been removed. Defects attributable to the evaporation process include a so-called positional shift in which a pattern is not formed at a predetermined position on the substrate 300 or a position of the pattern is shifted.

As shown in Fig. 3, as the number of depositions increases, the Δgap increases. This is because the positional shift due to magnetic force occurs partially. That is, in the vertical evaporation apparatus, since the direction of gravity and the direction of magnetic force are different, fluctuations are likely to occur in the in-plane distance between the substrate 300 and the evaporation mask 200, and the evaporation mask 200 facing the surface of the substrate 300 The side of) tends to be inclined. And as time passes, the Δgap tends to increase. For this reason, as the number of times of evaporation increases, in-plane variation occurs in the evaporation process, and the yield in the evaporation process decreases. As described above, the present inventors have found that there is a correlation in which the yield in the vapor deposition step decreases when the Δ gap increases. The yield in the evaporation process is improved by adjusting the gap between the substrate 300 and the evaporation mask 200 for each evaporation. However, in the conventional vertical evaporation apparatus, the gap between the substrate 300 and the evaporation mask 200 is adjusted. Since it takes too much time, it is not practical to adjust the gap for each evaporation, and it has only been performed at a certain number of evaporations or every time the evaporation mask 200 is replaced.

On the other hand, in the evaporation apparatus 100 according to the present embodiment, since the time required to adjust the gap between the substrate 300 and the evaporation mask 200 is short, the gap between the substrate 300 and the evaporation mask 200 is adjusted for each evaporation. It is possible to adjust. Of course, the evaporation apparatus 100 according to the present embodiment adjusts the gap between the substrate 300 and the evaporation mask 200 at a certain number of evaporation times or every time the evaporation mask 200 is exchanged, depending on the amount of allowable positional displacement. It can be adjusted, and also in this case, the time for adjusting the gap between the substrate 300 and the deposition mask 200 can be shortened.

Subsequently, a vapor deposition apparatus 100 according to the present embodiment will be described with reference to FIGS. 4 and 5.

4 is a schematic cross-sectional view of the vapor deposition apparatus 100 according to the present embodiment. As shown in FIG. 4, the vapor deposition apparatus 100 includes an evaporation source 110, a support part 120, a first substrate clamp 130-1, a second substrate clamp 130-2, and , The first optical sensor 140-1, the second optical sensor 140-2, the first deposition mask clamp 150-1, the second deposition mask clamp 150-2, and 1 adjustment unit 160-1, second adjustment unit 160-2, magnet unit 170, position alignment camera 180, first substrate side adjustment unit 190-1, and second substrate It includes a side adjustment unit (190-2).

In addition, in the present specification, when the first substrate clamp 130-1 and the second substrate clamp 130-2 are not particularly distinguished, the description will be described as the substrate clamp 130. Similarly, the first optical sensor 140-1 and the second optical sensor 140-2, the first deposition mask clamp 150-1 and the second deposition mask clamp 150-2, the first adjustment unit ( 160-1) and the second adjustment unit 160-2, and the first substrate side adjustment unit 190-1 and the second substrate side adjustment unit 190-2 are not specifically distinguished, respectively, the optical sensor 140 ), the evaporation mask clamp 150, the adjustment unit 160, and the substrate side adjustment unit 190 will be described.

The evaporation source 110 includes a crucible having an opening on the substrate side, and a heater for heating the crucible. When the evaporation material is put in the crucible and the crucible is heated by the heater, the evaporation material evaporates from the opening of the crucible. The protruding evaporation material is deposited on the substrate 300 through the opening 230 of the evaporation mask 200. A plurality of evaporation sources 110 may be provided, or may be movable in the vertical direction.

The support part 120 may support the substrate 300 and preferably has a flat surface on the substrate 300 side in order to prevent warping of the substrate 300 from occurring.

The substrate clamp 130 can hold the substrate 300 and fix the substrate 300 on the support 120. As shown in FIG. 4, when the substrate 300 is erected and disposed in a vertical direction, the first substrate clamp 130-1 fixes the upper portion of the substrate 300, and the second substrate clamp 130-2 ) Fixes the lower portion of the substrate 300. A plurality of substrate clamps 130 may be provided on each of the upper and lower portions of the substrate 300. Particularly, in the case where the substrate 300 is rectangular so that the substrate 300 can be stably held, it is preferable that the substrate clamp 130 is provided at four corners of the substrate 300.

The optical sensor 140 may detect a gap l between the substrate 300 and the deposition mask 200. In addition, it is preferable that the optical sensor 140 is provided with a plurality of optical sensors 140 so that the gap l can be detected at a plurality of positions. For example, as shown in FIG. 4, when the substrate 300 is erected and disposed in a vertical direction, the first optical sensor 140-1 is a first gap l _{1 at a first position above the substrate 300.} It is preferable that the second optical sensor 140-2 detects _{the second gap l 2 of the second position under the substrate 300.}

As the optical sensor 140, for example, a confocal sensor may be used. The confocal sensor focuses on the surface of the substrate 300 and the surface of the deposition mask 200 by passing white light (such as an LED) through the multi-lens and dispersing it. Monochromatic light having focus on the surface of the substrate 300 and the surface of the deposition mask 200 is detected with a spectrometer, and a distance (gap l) between the surface of the substrate 300 and the surface of the deposition mask 200 is calculated. In addition, the optical sensor 140 is not limited to a confocal sensor. The optical sensor 140 may be any one capable of measuring the distance (gap l) between the surface of the substrate 300 and the surface of the deposition mask 200, and may be configured with a plurality of measurement sensors. For example, the optical sensor 140 includes a first measurement sensor for measuring a distance of the surface of the substrate 300 and a second measurement sensor for measuring a distance of the surface of the deposition mask 200, and the first From the first distance measured by the measurement sensor and the second distance measured by the second measurement sensor, the distance (gap l) between the surface of the substrate 300 and the surface of the deposition mask 200 may be calculated.

The evaporation mask clamp 150 can hold and fix the evaporation mask 200. Further, the evaporation mask clamp 150 is connected to the adjustment unit 160 so that the position of the vapor deposition mask 200 can be adjusted by the adjustment unit 160. As shown in FIG. 4, when the deposition mask 200 is vertically disposed, the first deposition mask clamp 150-1 fixes the upper portion of the deposition mask 200, and the second deposition mask clamp (150-2) fixes the lower portion of the deposition mask 200. A plurality of clamps 150 for deposition masks may be provided on each of the upper and lower portions of the deposition mask 200. In particular, in order to stably hold the evaporation mask 200, the clamp 150 for evaporation masks is preferably provided for four corners of the evaporation mask 200 when the evaporation mask 200 is rectangular. Do.

The adjustment unit 160 automatically moves the evaporation mask clamp 150 so that the gap l between the substrate 300 and the evaporation mask 200 is less than or equal to a predetermined Δ gap while detecting the gap l between the substrate 300 and the evaporation mask 200 by the optical sensor 140, The position of the deposition mask 200 relative to the substrate 300 may be adjusted. That is, the adjustment unit 160 may receive a signal from the optical sensor 140 and automatically adjust the clamp 150 for a deposition mask based on the signal. Therefore, the adjustment unit 160 may be electrically connected so as to enable communication connection with the optical sensor 140. In addition, it is preferable that a plurality of adjustment units 160 are provided, similar to the optical sensor 140. For example, as shown in FIG. 4, when the deposition mask 200 is vertically disposed, the first adjustment unit 160-1 adjusts the gap l detected by the first optical sensor 140-1. Based on the first deposition mask clamp 150-1 can be adjusted, the second adjustment unit 160-2 based on the gap l detected by the second optical sensor 140-2, the first 2 The clamp 150-2 for deposition masks can be adjusted.

The adjustment unit 160 may adjust the gap l between the substrate 300 and the deposition mask 200 by moving the deposition mask clamp 150 in a direction perpendicular to the substrate 300 (left and right directions in the drawing). In addition, each of the first adjustment unit 160-1 and the second adjustment unit 160-2 includes a motor connected to the deposition mask clamp 150 so as to be independently driven, and a control unit for controlling driving of the motor. The control unit controls driving of the motor based on the gap l detected by the optical sensor 140. That is, the control unit of the adjustment unit 160 adjusts the motor connected to the deposition mask clamp 150 so that the gap l detected by the optical sensor 140 falls within a predetermined range. The adjustment unit 160 is not limited to a motor, and may be an actuator capable of moving the clamp 150 for deposition masks. In addition, the motor may be adjusted not only in the vertical direction with respect to the substrate 300 but also in the horizontal direction with respect to the substrate 300.

In FIG. 4, two adjustment units 160 are shown. However, when the clamp 150 for deposition masks is provided at four corners of the deposition mask 200, the adjustment unit 160 for each clamp 150 for deposition masks. Is prepared. That is, four adjustment units are provided. In addition, although the four adjustment units 160 may be independently driven, it is preferable that the respective control units of the four adjustment units 160 are synchronized. Thereby, it becomes possible to drive four places at the same time, and it becomes possible to adjust the ?gap in a short time.

When a plurality of adjustment units 160 are provided, the control units of the plurality of adjustment units 160 may be connected to each other. For example, by connecting the control unit of the first adjustment unit 160-1 and the control unit of the second adjustment unit 160-2, the first gap l ₁ and the second adjustment unit by the first adjustment unit 160-1 Adjustment of a plurality of gaps l such as the second gap l _{2 by (160-2) can be performed synchronously.} In addition, although not shown, an integrated control unit to which the control units of the plurality of adjustment units 160 are connected may be provided, and the gap l may be adjusted by synchronizing the plurality of adjustment units 160 under control of the integrated control unit.

The magnet part 170 is close to the support part 120 and makes the deposition mask 200 in contact with a part of the substrate 300 by the magnetic force of the magnet part 170, so that the deposition mask 200 for the substrate 300 is applied. ) Can be fixed. Therefore, the magnet unit 170 includes a magnet for pulling the vapor deposition mask 200 and a driving mechanism for driving the magnet. As the magnet included in the magnet part 170, for example, a neodymium magnet or a ferrite magnet can be used.

The position alignment camera 180 may capture an image of an alignment mark provided at a predetermined position on the substrate 300 and an alignment mark at a predetermined position of the deposition mask 200. The camera 180 for alignment may be connected to the adjustment unit 160. The adjustment unit 160 adjusts the positions of the substrate 300 and the deposition mask 200 based on the imaging of the position alignment camera 180. The adjustment unit 160 may adjust the positions of the substrate 300 and the deposition mask 200 so that, for example, two alignment marks overlap or two alignment marks are aligned. Further, a plurality of alignment cameras 180 may be provided.

The substrate-side adjustment unit 190 may move the support unit 120 in a direction perpendicular to the substrate 300 (left and right directions in the drawing) to bring the substrate 300 to the deposition mask 200. In other words, the substrate side adjustment unit 190 can roughly adjust the gap l between the substrate 300 and the deposition mask 200. The substrate-side adjustment unit 190 may have the same configuration as the adjustment unit 160. Further, the substrate-side adjustment portion 190 and the support portion 120 may be connected, and the support portion 120 may be moved by sliding the substrate-side adjustment portion 190. Moreover, you may extrude and move the support part 120 by protruding a pin from the board|substrate side adjustment part 190.

By providing the substrate-side adjustment unit 190, it becomes possible to roughly adjust the gap l in the substrate-side adjustment unit 190 and finely adjust the gap l in the adjustment unit 160. Further, the functions of fine adjustment of the adjustment unit 160 and rough adjustment of the substrate side adjustment unit 190 may be reversed. That is, the gap l is roughly adjusted by the adjustment unit 160 that adjusts the position on the mask side, and the gap l is finely adjusted by the substrate side adjustment unit 190 that adjusts the position on the substrate side, while adjusting the Δ gap. You may do it.

Referring to Fig. 5, a further description will be given of a vapor deposition apparatus 100 according to an embodiment of the present invention.

5 is a schematic plan view of the vapor deposition apparatus 100 according to the present embodiment. Specifically, FIG. 5 is a schematic plan view of the vapor deposition apparatus 100 showing a configuration related to the adjustment of the gap l between the substrate 300 and the vapor deposition mask 200. In addition, in FIG. 5, only the substrate 300 is shown, and the vapor deposition mask 200 is omitted.

5, the deposition apparatus 100, to adjust the first optical sensor (140-1), the first gap l ₁ for detecting a first gap l ₁ of the first position of the substrate 300, _{A gap l 2} at a second position of the first deposition mask clamp 150-1, and a first adjustment unit 160-1 capable of adjusting the first deposition mask clamp 150-1, and the second position of the substrate 300 The second optical sensor 140-2 that detects the second, the second _{deposition mask clamp 150-2 capable of adjusting the second gap l 2} , and the second deposition mask clamp 150-2 can be adjusted. The second adjustment unit 160-2, the third optical sensor 140-3 for detecting a _{gap l 3} of the third position of the substrate 300, and a third deposition mask clamp 150 capable of adjusting the _{gap l 3} -3), and a third adjustment unit 160-3 capable of adjusting the third deposition mask clamp 150-3, and a fourth optical device that detects _{the fourth gap l 4 at the fourth position of the substrate 300} A fourth adjustment unit 160- capable of adjusting the sensor 140-4, the fourth _{deposition mask clamp 150-4 capable of adjusting the fourth gap l 4, and the fourth deposition mask clamp 150-4} 4) and a fifth optical sensor 140-5 for detecting a _{fifth gap l 5} at a fifth position of the substrate 300, and a fifth deposition mask clamp 150-5 capable of adjusting _{the fifth gap l 5} ), and a fifth adjustment unit 160-5 capable of adjusting the fifth deposition mask clamp 150-5, and a sixth optical sensor that detects a _{sixth gap l 6 at a sixth position of the substrate 300 (} 140-6), a sixth _{deposition mask clamp 150-6 capable of adjusting the sixth gap l 6} , and a sixth adjustment unit 160-6 capable of adjusting the sixth deposition mask clamp 150-6 Includes.

Here, the first position, the second position, the third position, and the fourth position are positions in the vicinity of the four corners of the substrate 300. In this drawing, the first and fourth positions are located above the substrate 300, and the second and third positions are located below the substrate 300. In addition, the first and third positions are located on a diagonal of the substrate 300, and the second and fourth positions are also located on a diagonal of the substrate 300. The fifth position is located in the middle of the first position and the second position, and the sixth position is located in the middle of the third position and the fourth position.

The first adjustment unit 160-1, the second adjustment unit 160-2, the third adjustment unit 160-3, and the fourth adjustment unit 160-4 are, respectively, a first gap l ₁ and a second gap l ₂ , Adjust so that the third gap l ₃ and the fourth gap l ₄ are 1.0 mm or less. Preferably, it may be adjusted to be 0.3 mm.

In addition, in order to suppress the in-plane variation within the substrate 300 and improve the yield in the deposition process, the maximum among _{the first gap l 1} , the second gap l ₂ , the third gap l ₃ and the fourth gap l ₄ The gap l _max and the minimum gap l _min are selected, and the difference between them, Δgap, is adjusted so that it falls within a predetermined range. For example, the Δgap is adjusted to satisfy Equation 1.

Preferably, the Δgap is adjusted to satisfy Equation 2.

As described above, the adjustment unit 160 not only adjusts the gap l at each position, but also adjusts the Δ gap associated with each gap l. That is, by performing the two-step adjustment of the gap 1, in-plane fluctuations in the substrate 300 can be suppressed, and the yield in the vapor deposition process can be improved.

Further, the adjustment of the Δgap may include the distance between the detection positions of the gap 1 as a parameter.

For example, when one of the gap l _{1 at} the first position and the gap l ₂ at the second position is the maximum gap l _max and the other is the minimum gap l _min , the first adjustment unit 160-1 and the second adjustment unit (160-2) is adjusted so as to satisfy Equation 3. Here, L ₁₂ is the distance between the first position and the second position.

In addition, in order to further improve the yield in the evaporation process, it is preferable that the first adjustment unit 160-1 and the second adjustment unit 160-2 are adjusted to satisfy Equation 4.

In addition, for example, when one of the gap l _{1 at} the first position and the gap l ₃ at the third position is the maximum gap l _max and the other is the minimum gap l _min , the first adjustment unit 160-1 and the third The adjustment unit 160-3 adjusts so as to satisfy Equation 5. Here, L ₁₃ is the distance between the first position and the third position.

In addition, in order to further suppress the in-plane fluctuation in the substrate 300, it is preferable that the first adjustment unit 160-1 and the third adjustment unit 160-3 are adjusted to satisfy Expression 6.

Similarly, the fourth adjustment unit 160-4 and the second adjustment unit 160-2, and the fourth adjustment unit 160-4 and the third adjustment unit 160-3 may be adjusted, but descriptions thereof are omitted here.

The ?gap may be adjusted not only at one point, but also at a plurality of points. That is, the substrate 300 may have n detection positions that are a first position, a second position, ..., an n-th position (n is a natural number of 3 or more).

In addition, when the size of the substrate 300 is more than a certain (for example, 1500 mm × 1850 mm or more), not only the four corners of the substrate 300, but also the gap l at the intermediate position of the substrate is the yield of the deposition process. Since it affects, it may have six detection positions. In this case, the fifth adjustment unit 160-5 and the sixth adjustment unit 160-6 adjust the fifth gap l ₅ and the sixth gap l ₆ , respectively. Among the first to sixth positions, _{two positions having a maximum gap l max} and a minimum gap l _min are selected, and at the two selected positions, Equations 1 to 6 may be satisfied.

As described above, the vapor deposition apparatus 100 according to the present embodiment can automatically adjust the gap l between the substrate 300 and the vapor deposition mask 200. When the gap l is automatically adjusted, the time required to adjust the gap l is significantly reduced compared to the case of manually adjusting the gap l. Therefore, it is possible to adjust the gap 1 for each evaporation, and the yield in the evaporation step can be improved. Further, by adjusting the Δgap related to the gap l at a plurality of positions in the substrate 300 so as to satisfy a predetermined equation, the yield in the vapor deposition process can be further improved.

<2nd embodiment>

Referring to Fig. 6, a method of manufacturing a display device using a vapor deposition apparatus according to an embodiment of the present invention will be described. In addition, hereinafter, description may be made with reference to the configuration of the vapor deposition apparatus 100 shown in FIGS. 4 and 5.

6 is a flowchart of a vapor deposition step in a method for manufacturing a display device according to the present embodiment. The vapor deposition process shown in FIG. 6 is one of the manufacturing processes of a display device, and is a process of forming an organic layer of an organic EL element by a vapor deposition method.

As shown in FIG. 6, the evaporation process includes a step of carrying in the substrate 300 (substrate carrying in step: S110), and a step of approximately adjusting the gap between the substrate 300 and the evaporation mask (approximate gap adjustment step: S120). And, a step of finely adjusting the gap between the substrate 300 and the deposition mask 200 (gap fine adjustment step: S125), and a step of aligning the positions of the substrate 300 and the deposition mask 200 (position alignment step: S130), a step of fixing the position of the deposition mask 200 with respect to the substrate 300 (position fixing step: S140), a step of depositing a deposition material (deposition step: S150), and the deposition mask 200 A step of releasing the position fixing (position releasing step: S160), and a step of carrying out the substrate 300 (substrate carrying out step: S170).

In the substrate carrying step S110, the substrate 300 is carried in the vapor deposition apparatus 100, and the substrate 300 is held by the substrate clamp 130 and fixed. In addition, the evaporation mask 200 may be provided in advance in the evaporation apparatus 100 before carrying in the substrate 300, or may be carried in and installed in the evaporation apparatus 100 after carrying in the substrate 300.

In the approximate gap adjustment step S120, the substrate 300 and the deposition mask 200 are brought close using the optical sensor 140, the support part 120, and the substrate side adjustment part 190. Specifically, the gap is detected by the optical sensor 140, and the substrate-side adjustment unit 190 moves the support unit 120 to adjust it so that it is less than or equal to a predetermined gap. Since the adjustment here is a rough adjustment, the predetermined gap is, for example, 1 cm or less.

In the gap fine adjustment step S125, the gap between the substrate 300 and the deposition mask 200 is finely adjusted using the optical sensor 140, the deposition mask clamp 150, and the adjustment unit 160. Specifically, the optical sensor 140 detects the gap, and the adjustment unit 160 moves the evaporation mask clamp 150 to adjust it so that it is less than or equal to a predetermined gap. The adjustment of the evaporation mask clamp 150 is automatically performed by a motor included in the adjustment unit 160. The gap fine adjustment step S125 may be performed every time the substrate is carried in, or may be performed after the substrate is carried in a plurality of times.

Adjustment of the gap l between the substrate 300 and the deposition mask 200 is performed at a plurality of positions within the substrate 300. In particular, in the first position, the second position, the third position, and the fourth position in the vicinity of the four corners of the substrate 300, respectively, the first gap l ₁ , the second gap l ₂ , the third gap l ₃ and the third It is preferable that the adjustment of the 4 gap l _{4 is performed.} Here, the first and fourth positions are positions above the substrate 300 in the state in which the substrate 300 is disposed, and the second and third positions are positions below the substrate 300. . In addition, the first position and the third position are diagonally on the substrate 300, and the second and fourth positions are also diagonally on the substrate 300.

Fine adjustment of the gap l is performed in two steps. First, the first gap l ₁ , the second gap l ₂ , the third gap l _3, and the fourth gap l ₄ are adjusted to be 1.0 mm or less. Preferably, the first gap l ₁ , the second gap l ₂ , the third gap l ₃ and the fourth gap l ₄ are adjusted to be 0.3 mm. When the gap l becomes large, the effect of fine adjustment of the gap l becomes small. Therefore, the gap is preferably within the above range.

Subsequently, the ?gap is adjusted. That is, the maximum gap l _max and the minimum gap l _{min are selected from the first gap l 1} , the second gap l ₂ , the third gap l _3, and the fourth gap l ₄ , and the difference between them, Δ gap, is within a predetermined range. Is adjusted. Specifically, by moving the adjustment unit 160 corresponding to the selected gap l independently and simultaneously, the ?gap is adjusted so that the ?gap becomes small. For example, the Δgap is adjusted to satisfy Equation 7.

Preferably, the Δgap is adjusted to satisfy Equation 8.

As described above, not only the gap l at each location is independently adjusted, but also the Δ gap associated with each gap l is also adjusted, thereby suppressing in-plane fluctuations in the substrate 300 to improve the yield in the deposition process. have.

Further, the adjustment of the Δgap may include the distance between the detection positions of the gap 1 as a parameter.

For example, if one of the gap l _{1 at} the first position and the gap l ₂ at the second position is the maximum gap and the other is the minimum gap, the gap l _{1 at} the first position and the gap l ₂ at the second position are, It is adjusted to satisfy Equation 9. Here, L ₁₂ is the distance between the first position and the second position.

In addition, _{it is preferable that the gap l 1} of the first position and the gap l ₂ of the second position are adjusted so as to satisfy Expression 10.

In addition, when one of the gap l _{1 at} the first position and the gap l ₃ at the third position is the maximum gap and the other is the minimum gap, the gap l _{1 at} the first position and the gap l ₃ at the third position are Equation 11 Is adjusted to meet. Here, L ₁₃ is the distance between the first position and the third position.

_{In addition, it is preferable that the gap l 1} of the first position and the gap l ₃ of the third position are adjusted so as to satisfy Expression 12.

In addition, if one of the first position gap l ₁ and the fourth position gap l ₄ is the maximum gap l _max and the other is the minimum gap l _min , the second position gap l ₂ and the third position gap If _{one of l 3} has a maximum gap l _max and the other has a minimum gap l _min , or one of the gap in the third position l ₃ and the gap in the fourth position l ₄ is the maximum gap l _max and the other is the minimum The case of the gap l _min can be considered, but since all are the same as the above-described equations, explanation is omitted here.

The ?gap may be adjusted not only at one point, but also at a plurality of points. That is, the substrate may have n detection positions that become the first position, the second position, ..., the n-th position (n is a natural number of 3 or more). In this case, each [Delta] gap at the first to nth positions is detected. And, among them, _{the difference between the maximum gap l max} and the minimum gap l _min is adjusted by the adjustment unit 160 so as to decrease. As a result, in-plane fluctuations within the substrate 300 can be suppressed during vapor deposition.

In addition to independently adjusting the gap l at a plurality of positions within the substrate 300, by adjusting the Δgap related to the gap l at a plurality of positions to satisfy a predetermined equation, the degree of in-plane variation within the substrate 300 Since it can be suppressed, the yield in the vapor deposition process can be further improved.

In the alignment step S130, the substrate 300 and the deposition mask 200 are aligned so that the pattern of the deposition mask 200 corresponds to the pattern of the substrate 300. Specifically, the alignment mark of the substrate 300 and the alignment mark of the deposition mask 200 are imaged using the camera 180 for alignment, and based on the imaged alignment mark, the adjustment unit 160 is 300) and the positions of the deposition mask 200 are adjusted. In addition, the position alignment step S130 may be performed after the gap fine adjustment step S125 or before the gap fine adjustment step S125.

In step S140 of fixing the position of the deposition mask 200, the magnet part 170 is brought close to the support part 120. As the magnet part 170 approaches the support part 120, the deposition mask 200 contacts a part of the substrate 300 by magnetic force, and the position of the deposition mask 200 with respect to the substrate 300 is fixed.

In the evaporation step S150, the evaporation source 110 is used to evaporate the evaporation material. The deposition material passing through the opening 230 formed in the deposition mask 200 is deposited on the substrate 300 to form an organic layer having a pattern corresponding to the pattern of the deposition mask 200.

In step S160 of releasing the position of the deposition mask 200, the magnet part 170 is separated from the support part 120. Since the magnet part 170 is spaced apart from the support part 120, the deposition mask 200 is also spaced apart from the substrate 300.

In the carrying out step S170 of the substrate 300, the substrate 300 is released from the fixing of the substrate 300 by the substrate clamp 130, and the substrate 300 is taken out from the vapor deposition apparatus 100.

As described above, according to the method of manufacturing a display device according to the present embodiment, in the evaporation process, a fine adjustment step (S125) for the gap between the substrate 300 and the evaporation mask 200 is included. That is, the gap 1 can be adjusted for each vapor deposition, and the yield in the vapor deposition step can be improved. Further, from the graph of Fig. 3, the number of times of deposition within the allowable yield range is derived, and based on this, the gap 1 may be adjusted for every number of times of deposition. In addition, not only independently adjusting the gaps l at a plurality of positions within the substrate 300, but also adjusting the Δgap related to the gaps l at the plurality of positions to satisfy a predetermined equation (in other words, the two-step By performing fine adjustment), the yield in the vapor deposition process can be further improved.

<3rd embodiment>

An example of a structure of a display device 700 according to an embodiment of the present invention will be described with reference to FIGS. 7 to 9. The display device 700 has flexibility and is manufactured using the vapor deposition device 100.

7 is a plan view of a display device 700 according to an embodiment of the present invention. In the display device 700, a first region 703 and a second region 710 are provided on a substrate 701. The second area 710 is located outside the first area 703.

The first area 703 is a so-called display area. In the first region 703, a plurality of pixels 709 are arranged in a matrix shape. In addition, the arrangement of the pixels 709 is not limited to the matrix shape. The arrangement of the pixels 709 can also be made into a zigzag shape, for example.

The second area 710 is a so-called peripheral area. The second region 710 includes two scanning line driving circuits 704 provided along the long side direction of the first region 703 and the end of the substrate 701 along the short side direction of the first region 703. It includes a plurality of terminals 707 provided. The two scanning line driving circuits 704 are provided so as to sandwich the first region 703 therebetween. Further, the plurality of terminals 707 are connected to the flexible printed circuit board 708. The driver IC 706 is provided on the flexible printed circuit board 708.

Video signals and various control signals are supplied from a controller (not shown) external to the display device 700 through the flexible printed circuit board 708. The video signal is processed by the driver IC 706 and input to the plurality of pixels 709. Various circuit signals are input to the scanning line driving circuit 704 via the driver IC 706.

In addition to the video signal and various circuit signals, power for driving the scanning line driving circuit 704, the driver IC 706, and the plurality of pixels 709 is supplied to the display device 700. Each of the plurality of pixels 709 has an organic EL element 840 described later. Part of the power supplied to the display device 700 is supplied to the organic EL elements 840 included in each of the plurality of pixels 709 to cause the organic EL elements 840 to emit light.

In the display device 700, a polarizing plate 702 may be provided on the first region 703.

[Pixel circuit]

8 is a pixel circuit included in each of the plurality of pixels 709 arranged in the display device 700 according to the embodiment of the present invention. The pixel circuit includes at least a transistor 810, a transistor 820, a capacitor element 830, and an organic EL element 840.

The transistor 810 can function as a selection transistor. That is, the conduction state of the gate of the transistor 810 is controlled by the scanning line 711 of the transistor 810. In the transistor 810, a gate, a source, and a drain are electrically connected to a scanning line 711, a signal line 712, and a gate of the transistor 820, respectively.

The transistor 820 can function as a driving transistor. That is, the transistor 820 controls the light emission luminance of the organic EL element 840. In the transistor 820, a gate, a source, and a drain are electrically connected to a source of the transistor 810, a driving power supply line 714, and an anode of the organic EL element 840, respectively.

In the capacitor 830, one of the capacitor electrodes is connected to the gate of the transistor 820 and is electrically connected to the drain of the transistor 810. Further, the other side of the capacitor electrode is connected to the anode of the organic EL element 840 and the drain of the transistor 820.

In the organic EL element 840, the anode is connected to the drain of the transistor 820, and the cathode is connected to the reference power supply line 716.

[Composition of the first area]

9 is a cross-sectional view of a pixel 709 of a display device 700 according to an embodiment of the present invention. Specifically, FIG. 9 is a cross-sectional view of the display device 700 shown in FIG. 7 taken along line C-C'.

The substrate 701 is made of one layer or a plurality of layers. In the case of having a plurality of layers, it is a laminated structure including, for example, a first resin layer 701a, an inorganic layer 701b, and a second resin layer 701c. In order to improve the adhesion between the first resin layer 701a and the second resin layer 701c, it is preferable to provide an inorganic layer 701b between the first resin layer 701a and the second resin layer 701c. . As the material of the first resin layer 701a and the second resin layer 701c, for example, acrylic, polyimide, polyethylene terephthalate, polyethylene naphthalate, or the like can be used. Further, as the material of the inorganic layer 701b, for example, silicon nitride, silicon oxide, or amorphous silicon can be used.

On the substrate 701, an undercoat layer 802 is provided. The undercoat layer 802 is provided by, for example, a single layer or lamination of a silicon oxide layer or a silicon nitride layer. In this embodiment, the undercoat layer 802 has a laminated structure comprising three layers of a silicon oxide layer 802a, a silicon nitride layer 802b, and a silicon oxide layer 802c. The silicon oxide layer 802a can improve adhesion to the substrate 701. The silicon nitride layer 802b can function as a blocking film for moisture and impurities from the outside. The silicon oxide layer 802c can function as a blocking film that prevents hydrogen contained in the silicon nitride layer 802b from diffusing to the side of the semiconductor layer to be described later.

In addition, an inorganic layer 803 may be provided on the undercoat layer 802 in accordance with a location where the transistor 820 is provided. By providing the inorganic layer 803, the change in transistor characteristics due to intrusion of light from the rear surface of the channel of the transistor 820 is suppressed, or the inorganic layer 803 is formed as a conductive layer and a predetermined potential is applied to the transistor. A back gate effect can be applied to (820).

On the undercoat layer 802, a transistor 820 is provided. The transistor 820 includes a semiconductor layer 804, a gate insulating layer 805, and a gate electrode 806a. As the transistor 820, an example in which an nch transistor is used is shown, but a pch transistor may be used. In this embodiment, the nchTFT adopts a structure in which low-concentration impurity regions 804b and 804c are provided between the channel region 804a and the source region 804d or the drain region 804e (high-concentration impurity region). As the material of the semiconductor layer 804, an oxide semiconductor such as amorphous silicon, polysilicon, or IGZO can be used. As the material of the gate insulating layer 805, for example, silicon oxide or silicon nitride can be used. Further, the gate insulating layer 805 may be a single layer or a stacked layer. As the gate electrode 806a, for example, MoW can be used. In addition, although FIG. 9 shows the structure of the transistor 820, the structure of the transistor 810 is also the same as that of the transistor 820. Further, in the following description, a connection relationship between the transistor 820 and an upper layer is shown, but this is not limited to the transistor 820 and may be a connection with a transistor other than the transistor 820.

An interlayer insulating layer 807 is provided so as to cover the gate electrode 806a. As the material of the interlayer insulating layer 807, for example, silicon oxide or silicon nitride can be used. In addition, the interlayer insulating layer 807 can be a single layer or a laminated layer. On the interlayer insulating layer 807, a source electrode 808a or a drain electrode 808b is provided. The source electrode 808a or the drain electrode 808b is through the openings of the interlayer insulating layer 807 and the gate insulating layer 805, respectively, the source region 804d and the drain region 804e of the semiconductor layer 804. Is connected with.

Here, on the gate insulating layer 805, a conductive layer 806b is provided. The conductive layer 806b is formed in the same process as the gate electrode 806a. The conductive layer 806b constitutes a capacitor by the source region 804d or the drain region 804e of the semiconductor layer 804 with the gate insulating layer 805 therebetween. In addition, the conductive layer 806b constitutes a capacitance by the source electrode 808a or the drain electrode 808b with the interlayer insulating layer 807 therebetween.

An insulating layer 809 is provided on the source electrode 808a or the drain electrode 808b.

A planarization film 811 is provided on the insulating layer 809. As the material of the planarization film 811, an organic material such as photosensitive acrylic or polyimide can be used. By providing the planarization film 811, the step difference due to the transistor 820 can be flattened.

Transparent conductive films 812a and 812b are provided on the planarization film 811. The transparent conductive film 812a is connected to the source electrode 808a or the drain electrode 808b through openings of the planarization film 811 and the insulating layer 809.

An insulating layer 813 is provided on the transparent conductive layers 812a and 812b. In the insulating layer 813, a region overlapping the transparent conductive film 812a and the source electrode 808a or the drain electrode 808b, and a region between the transparent conductive film 812a and the transparent conductive film 812b of an adjacent pixel. An opening is provided in the.

On the insulating layer 813, a pixel electrode 822 is provided. The pixel electrode 822 is connected to the transparent conductive film 812a through an opening of the insulating layer 813. In this embodiment, the pixel electrode 822 is formed as a reflective electrode. The reflective electrode may have a laminated structure of, for example, a transparent conductive material such as IZO (indium zinc oxide) or ITO (indium tin oxide), and a material having a high reflectance such as Ag.

An insulating layer 825 serving as a partition is provided at a boundary between the pixel electrode 822 and the pixel electrode 822 of an adjacent pixel. The insulating layer 825 is also called a bank or a rib. As the material of the insulating layer 825, an organic material similar to the material of the planarization film 811 can be used. The insulating layer 825 is opened to expose a part of the pixel electrode 822.

Here, the planarization film 811 and the insulating layer 825 are in contact with each other through an opening provided in the insulating layer 813. By having such a configuration, moisture or gas desorbed from the planarization film 811 during heat treatment during the formation of the insulating layer 825 is removed from the insulating layer 825 through the opening of the insulating layer 813 can do. Thereby, peeling at the interface between the planarization film 811 and the insulating layer 825 can be suppressed.

After the formation of the insulating layer 825, an organic layer 823 forming the organic EL element 840 is formed. In the organic layer 823, at least a hole transport layer, a light emitting layer, and an electron transport layer are stacked in order from the pixel electrode 822 side. 9, the organic layer 823 is selectively provided for each pixel 709, but among the organic layers 823, the light emitting layer is selectively provided for each pixel 709, and the hole transport layer and the electron transport layer are It may be provided so as to cover all the pixels. These layers are formed using the vapor deposition apparatus 100. In addition, not only the hole transport layer and the electron transport layer, but also the light emitting layer may be provided so as to cover all pixels. When the light-emitting layer is provided so as to cover all pixels, white light is obtained from all pixels, and a desired color wavelength portion can be extracted by a color filter (not shown).

After the organic layer 823 is formed, a counter electrode 824 is formed. In this embodiment, since the organic EL element 840 has a top emission structure, the counter electrode 824 needs to have light transmittance. In addition, the top emission structure refers to a structure in which light is emitted from the counter electrode 824 disposed on the pixel electrode 822 with the organic layer 823 therebetween. In this embodiment, an MgAg thin film capable of transmitting light from the organic EL layer is formed as the counter electrode 824. According to the above-described order of forming the organic layer 823, the pixel electrode 822 becomes an anode, and the counter electrode 824 becomes a cathode.

On the counter electrode 824 of the organic EL element 840, a sealing film 850 is provided. One of the functions of the sealing film 850 is to prevent moisture from entering the organic layer 823 from outside, and the sealing film 850 is required to have high gas barrier properties. Therefore, it is preferable that the sealing film 850 contains an inorganic insulating film. As the structure of the sealing film 850, for example, a stacked structure of the first inorganic insulating film 831, the first organic insulating film 832, and the second inorganic insulating film 833 may be used.

As the material of the first inorganic insulating film 831 and the second inorganic insulating film 833, for example, silicon nitride or aluminum nitride may be used. Further, the first inorganic insulating film 831 and the second inorganic insulating film 833 may be the same material.

As the material of the first organic insulating film 832, for example, an acrylic resin, an epoxy resin, a polyimide resin, a silicone resin, a fluorine resin, or a siloxane resin can be used.

Subsequently, a structure above the sealing film 850 will be described.

A second organic insulating film 834 is provided on the sealing film 850 so as to cover the first region 703. The second organic insulating film 834 may function as a mask for etching the first inorganic insulating film 831 and the second inorganic insulating film 833. As the material of the second organic insulating film 834, for example, an adhesive material such as an acrylic resin, a rubber resin, a silicone resin, or a urethane resin can be used.

A polarizing plate 702 is provided on the second organic insulating film 834. The polarizing plate 702 has a laminated structure including a 1/4 wave plate and a linear polarizing plate. With this configuration, light from the light emitting region can be emitted from the surface of the polarizing plate 702 on the display side to the outside.

In the display device 700, if necessary, a cover glass may be provided on the polarizing plate 702. A touch sensor or the like may be provided on the cover glass or the sealing film. In this case, in order to fill the gap between the polarizing plate 702 and the cover glass, a filler made of resin or the like may be enclosed.

As described above, according to the display device 700 according to the present embodiment, since the organic layer 823 of the organic EL element 840 is formed using the vapor deposition apparatus 100, the pixel 709 of the organic layer 823 The positional shift of is suppressed, and the organic layer 823 is uniformly formed on the insulating layer 825. Further, even when the light emitting layer is also provided so as to cover all the pixels, the positional shift at the end of the first region 703 is suppressed.

Each embodiment can be implemented by appropriately combining configurations as long as they do not contradict each other. In addition, based on the configuration of each embodiment, those skilled in the art appropriately add, delete, or change the design of constituent elements, or add, omit, or change the conditions of the process, the gist of the present invention. As far as it is done, it is included in the scope of the present invention.

In addition, even if it is different from the effect caused by the aspect of each of the above-described embodiments, it is obvious from the description of the present specification, or what can be easily predicted by a person skilled in the art, naturally caused by the present invention. It is interpreted to be.

100: evaporation apparatus
110: evaporation source
120: support
130: clamp for board
130-1: clamp for the first substrate
130-2: clamp for the second substrate
140: optical sensor
140-1: first optical sensor
140-2: second optical sensor
140-3: third optical sensor
140-4: fourth optical sensor
140-5: fifth optical sensor
140-6: sixth optical sensor
150: clamp for deposition mask
150-1: clamp for the first deposition mask
150-2: clamp for the second deposition mask
150-3: clamp for the third deposition mask
150-4: clamp for the fourth deposition mask
150-5: clamp for the fifth deposition mask
150-6: clamp for the sixth deposition mask
160: adjustment unit
160-1: first adjustment unit
160-2: second adjustment unit
160-3: third coordination unit
160-4: fourth coordination unit
160-5: fifth coordination unit
160-6: 6th coordination unit
170: magnet part
180: camera for position alignment
190: board side adjustment unit
190-1: first substrate side adjustment unit
190-2: second substrate side adjustment unit
200: evaporation mask
210: mask frame
220: metal mask
230: opening
300: substrate
700: display device
701: substrate
701a: first resin layer
701b: inorganic layer
701c: second resin layer
702: polarizer
703: first area
704: scanning line driving circuit
706: driver IC
707: terminal
708: flexible printed circuit board
709: pixel
710: second area
711: scan line
712: signal line
714: drive power line
716: reference power line
730: bending area
740: light-emitting element
802: undercoat layer
802a: silicon oxide layer
802b: silicon nitride layer
802c: silicon oxide layer
803: inorganic layer
804: semiconductor layer
804a: channel area
804b: low-concentration impurity region
804d: source area
804e: drain region
805: gate insulating layer
806a: gate electrode
806b: conductive layer
807: interlayer insulating layer
808a: source electrode
808b: drain electrode
809: insulating layer
810: transistor
811: planarization film
812a: transparent conductive film
812b: transparent conductive film
813: insulating layer
820: transistor
822: pixel electrode
823: organic layer
824: counter electrode
825: insulating layer
830: capacitive element
831: first inorganic insulating film
832: first organic insulating film
833: second inorganic insulating film
834: second organic insulating film
840: organic EL device
850: sealing film

Claims (24)

It is a method of manufacturing a display device in which an organic material is deposited on a substrate using a deposition mask,
Arranging the deposition mask facing the substrate,
Detecting _{a first gap (l 1} ) between the substrate and the deposition mask at a first position,
Detecting _{a second gap (l 2} ) between the substrate and the deposition mask at a second position,
A method of manufacturing a display device in which the first gap (l ₁ ) and the second gap (l _{2) are adjusted to satisfy Equation 3.}

(L ₁₂ : distance between the first position and the second position) The method of claim 1,
A method of manufacturing a display device that satisfies Equation 4.

The method according to claim 1 or 2,
_{In addition, a third gap (l 3} ) between the substrate and the deposition mask at a third position is detected,
A method of manufacturing a display device in which the first gap (l ₁ ) and the third gap (l _{3) are adjusted to satisfy Equation 5.}

(L ₁₃ : Distance between the first position and the third position) The method of claim 3,
A method of manufacturing a display device that satisfies Equation 6.

The method of claim 1,
The substrate and the deposition mask are disposed toward a direction in which a surface facing each other crosses a vertical direction,
In the vertical direction, the first position is located above the second position. The method of claim 1,
Each of the first position and the second position is any one of the vicinity of four corners of the substrate. The method of claim 1,
Each of the first gap (l ₁ ) and the second gap (l ₂ ) is synchronously adjusted. It is a method of manufacturing a display device in which an organic material is deposited on a substrate using a deposition mask,
Arranging the deposition mask facing the substrate,
Arranging the substrate and the deposition mask toward a direction in which a surface facing each other intersects a vertical direction,
Detecting a first gap between the substrate and the deposition mask at a first position,
Detecting a second gap between the substrate and the deposition mask at a second position,
A method of manufacturing a display device, wherein the first position and the second position are simultaneously adjusted so that a difference between the first gap and the second gap is reduced. The method of claim 8,
It has n (n is a natural number of 3 or more) detection positions including the first position and the second position, and detects each gap between the substrate and the deposition mask at the first to nth positions, ,
A method of manufacturing a display device, wherein the first position to the n-th position are simultaneously adjusted so that a difference between a maximum value and a minimum value among the gaps is reduced. The method of claim 9,
The first to n-th positions are provided in the vicinity of an end portion of the substrate. The method of claim 10,
The substrate is rectangular, and all or part of the first to n-th positions are provided at four corners of the substrate. A means for disposing a deposition mask facing the substrate,
A first detection unit that detects a _{first gap (l 1} ) between the substrate and the deposition mask at a first position,
A second detection unit that detects a _{second gap (l 2} ) between the substrate and the deposition mask at a second position,
A first adjustment unit for adjusting the first gap l _1,
Including a second adjustment unit for adjusting the second gap (l _{2 ),}
The first adjustment unit and the second adjustment unit, the deposition apparatus for adjusting _{the first gap (l 1} ) and the second gap (l _{2) to satisfy Equation 9.}

(L ₁₂ : distance between the first position and the second position) The method of claim 12,
A deposition apparatus that satisfies Equation 10.

The method of claim 12 or 13,
A third detection unit for detecting a _{third gap (l 3} ) between the substrate and the deposition mask at a third position,
Further comprising a third adjustment unit for adjusting the third gap (l _{3 ),}
The first and third adjustment units, evaporation apparatus for adjusting _{the first gap (l 1} ) and the third gap (l _{3) to satisfy Equation 11.}

(L ₁₃ : Distance between the first position and the third position) The method of claim 14,
A vapor deposition apparatus that satisfies Equation 12.

The method of claim 12 or 13,
The substrate and the deposition mask are configured such that a surface facing each other is disposed toward a direction crossing a vertical direction,
In the vertical direction, the first adjustment unit is positioned above the second adjustment unit. The method of claim 12,
Each of the first position and the second position is any one of the vicinity of four corners of the substrate. The method of claim 12,
The vapor deposition apparatus in which the first adjustment unit and the second adjustment unit are synchronized. A means for arranging a deposition mask facing a substrate, and arranging the substrate and the deposition mask toward a direction in which a surface facing each other crosses a vertical direction;
A first detection unit for detecting a first gap between the substrate and the deposition mask at a first position,
A second detection unit for detecting a second gap between the substrate and the deposition mask at a second position,
A first adjustment unit for adjusting the first gap,
Including a second adjustment unit for adjusting the second gap,
The first adjusting unit and the second adjusting unit are configured to simultaneously adjust the first position and the second position so that a difference between the first gap and the second gap is reduced. The method of claim 19,
It has n (n is a natural number of 3 or more) detection positions including the first position and the second position,
The first to n-th detection units for detecting gaps between the substrate and the deposition mask in the first gap at the first position to the n-th gap at the n-th position,
The first adjustment unit to the n-th adjustment unit for adjusting each of the gaps, including the first adjustment unit and the second adjustment unit,
A vapor deposition apparatus which simultaneously adjusts the first position to the n-th position so that the difference between the maximum value and the minimum value among the gaps is small. The method of claim 20,
The first to n-th positions are provided in the vicinity of an end portion of the substrate. The method of claim 21,
The substrate is rectangular, and all or part of the first to n-th positions are provided at four corners of the substrate. The method of claim 19,
The first adjustment unit and the second adjustment unit are provided on the deposition mask side. The method of claim 23,
A deposition apparatus further comprising a substrate-side adjustment unit configured to adjust a position of the substrate on a side of the substrate opposite to the deposition mask.

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