JP4830427B2 - Membrane manufacturing method - Google Patents

Description

  The present invention relates to, for example, a film manufacturing method for forming a film as an auxiliary wiring on a common electrode of an electro-optical device, an electro-optical device manufactured using the method, and a mask used in the method.

  One of the electro-optical devices described above is, for example, an organic EL (Electro Luminescence) device. For example, the organic EL device is configured by sandwiching a plurality of organic layers including a light emitting layer between an anode disposed on the lower side and a cathode that is a solid-shaped common electrode disposed on the upper side, and the supplied current value Accordingly, the light emitting layer emits light.

In the organic EL device, the cathode is formed in a solid shape as described above, and in the case of a top emission structure that emits light from the upper surface, the light transmittance is deteriorated by thickening the cathode. In order to improve the transparency of the cathode, the thickness of the cathode disposed on the upper side is reduced. Therefore, when a voltage is applied to both ends of the thin cathode, the amount of voltage drop near the center in the display region increases, and the value of the current flowing through the light emitting layer decreases as it approaches the center in the display region. As a result, the luminance of the pixel is reduced, and as a result, light emission luminance unevenness (lighting unevenness) may occur in the entire display area. Such luminance unevenness is likely to appear significantly as the display area becomes larger.
In order to suppress the voltage drop (brightness unevenness) as described above, the entire display area is electrically connected to the cathode so as to be substantially equipotential, and in the area that does not overlap the pixel (pixel boundary area), for example, aluminum The auxiliary wiring made of is formed so that the necessary current flows through the entire display area.

  The auxiliary wiring is formed by, for example, a vacuum evaporation method using a metal metal mask. Specifically, auxiliary wiring is formed in the pixel boundary region through an opening formed in the metal mask. The metal mask is attracted and fixed to the substrate by the magnetic force of the magnet stage that supports the substrate disposed on the substrate. The thickness of the metal mask is preferably thin in order to improve the shape accuracy of the deposited film. In order to suppress the bending of the thin mask, the shape of the opening is adjusted (flattened) by pulling the mask from the periphery as described in Patent Document 1.

JP 2004-31336 A

  However, as the display area becomes larger or high definition, the auxiliary wiring formed between the pixels must be elongated, and accordingly, the shape of the opening hole of the mask becomes elongated. In addition, since the thickness of the mask is thin, even if the mask is pulled from the periphery, the strength of the beam around the opening hole of the mask is weak and easily bent, so that the mask is not fixed in a normal state. As a result, when the auxiliary wiring is formed on the substrate, it is not possible to prevent the luminance of the auxiliary wiring from becoming too thin and uneven brightness, or the straightness of the auxiliary wiring cannot be obtained, and the pixel area is overlapped with the pixel area. There was a problem of being lost.

  The present invention relates to a method for manufacturing a film capable of forming an auxiliary wiring capable of flowing a current necessary for lighting a pixel without narrowing the pixel region, an electro-optical device manufactured using the method, and An object of the present invention is to provide a mask used in the method.

According to the film manufacturing method of the present invention, the shape of the first film divided in the longitudinal direction of the film in order to form a linear elongated film between the pixel part formed on the substrate. This corresponds to a first film forming step of forming the first film on the substrate using a mask in which an opening hole corresponding to is formed, and a shape of the second film divided in the longitudinal direction of the film. A second film forming step of forming the second film on the substrate using a mask in which an opening hole is formed. In the first film forming step, the first mask which is a metal mask is magnetically applied. The first film is formed by suction and fixing to the substrate, and in the second film forming step, a second mask, which is a metal mask different from the first mask, is sucked and fixed to the substrate by magnetic force. A film is formed.
The film manufacturing method of the present invention includes a pixel electrode on a substrate, a common electrode formed at a position facing the pixel electrode, a light emitting layer provided between the pixel electrode and the common electrode, A pixel portion is formed in the overlapping portion, and the common electrode is contacted to flow a current necessary for the pixel to emit light in a normal state in a boundary region between the pixel portion and the pixel portion. A method of manufacturing a film for forming a linear elongated film using a mask on which an opening corresponding to the shape of the first film divided in the longitudinal direction of the film is formed. A first film forming step of forming the first film on the substrate, and a mask formed with an opening corresponding to the shape of the second film divided in the longitudinal direction in the film. A second film forming step of forming two films, wherein the film is a metal film In the first film forming step, the first mask, which is a metal mask, is attracted and fixed to the substrate by magnetic force to form the first film, and in the second film forming step, the first film is formed. A second mask, which is a metal mask different from the mask, is attracted and fixed to the substrate by a magnetic force to form the second film.
In order to achieve the above object, in the method for producing a film according to the present invention, an opening corresponding to the shape of the first film in the film is formed in order to form a linear elongated film on the substrate. A first film forming step of forming the first film on the substrate using a mask, and the mask on which an opening corresponding to the shape of the second film in the film is formed is formed on the substrate. A second film forming step of forming the second film.

  According to this method, since the second film is formed in addition to the first film formed in the first film forming process by the second film forming process, the film is divided into a plurality of times to complete the film. Is possible. Thereby, the opening hole of a mask can be made small according to the shape of the 1st film | membrane or 2nd film | membrane which divided | segmented the film | membrane. Therefore, the amount of bending of the beam between the opening hole in the mask can be reduced, and when the mask is fixed, the shape of the opening hole can be made a regular shape. As a result, a film having a regular shape can be formed on the substrate.

  In order to achieve the above object, a film manufacturing method according to the present invention includes a longitudinal direction of a film in order to form a linear elongated film between a pixel portion formed on a substrate and the pixel portion. A first film forming step of forming the first film on the substrate using a mask in which an opening corresponding to the shape of the first film divided into the first film is formed; and the film is divided in the longitudinal direction of the film. And a second film forming step of forming the second film on the substrate using the mask in which an opening corresponding to the shape of the second film is formed.

  According to this method, the second film forming step forms the second film between the pixel portion and the pixel portion in addition to the first film formed by the first film forming step. It can be formed by being divided into a plurality of times. Thereby, the opening hole of a mask can be made small according to the shape of the 1st film | membrane or 2nd film | membrane which divided | segmented the film | membrane. Therefore, the amount of bending of the beam between the opening hole in the mask can be reduced, and when the mask is fixed, the shape of the opening hole can be made a regular shape. As a result, a film having a regular shape can be formed between the pixel portion on the substrate and the pixel portion can be prevented from being narrowed when the film is not formed in a regular state. .

  In order to achieve the above object, a film manufacturing method according to the present invention includes a pixel electrode, a common electrode formed at a position facing the pixel electrode, a pixel electrode, and the common electrode on a substrate. A pixel portion is formed in a portion where the light emitting layer provided therebetween overlaps, and a current necessary for the pixel to emit light in a normal state in a boundary region between the pixel portion and the pixel portion. Is a film manufacturing method for forming a linear elongated film in contact with the common electrode, wherein an opening corresponding to the shape of the first film divided in the longitudinal direction of the film is formed. The first film forming step of forming the first film on the substrate using the mask, and the mask having openings corresponding to the shape of the second film divided in the longitudinal direction in the film Forming a second film on the substrate using Has a degree, the.

  According to this method, the second film forming step forms the second film between the pixel portion and the pixel portion in addition to the first film formed by the first film forming step. It can be formed by being divided into a plurality of times. Thereby, the opening hole of a mask can be made small according to the shape of the 1st film | membrane or 2nd film | membrane which divided | segmented the film | membrane. Therefore, the amount of bending of the beam between the opening hole in the mask can be reduced, and when the mask is fixed, the shape of the opening hole can be made a regular shape. As a result, a film having a regular shape can be formed between the pixel portion on the substrate and the pixel portion can be prevented from being narrowed when the film is not formed in a regular state. . Further, since the pixel portion can emit light in a normal state by the film, a display portion (pixel portion) with less lighting unevenness (luminance unevenness) can be formed.

  In the film manufacturing method according to the present invention, the film is an auxiliary wiring made of a metal film, and is preferably formed in the vertical direction.

  According to this method, since the auxiliary wiring made of the metal film electrically connected to the common electrode is formed in the vertical direction (for example, the boundary region from the end side to which the voltage is applied), the voltage is applied. Even if it is a place away from the end side, a normal current can be supplied to the pixel portion. This suppresses the occurrence of uneven brightness (lighting unevenness) over the entire substrate without weakening the brightness of the light emitted from the substrate away from the voltage application side, for example, near the center of the substrate. be able to.

  In the film manufacturing method according to the present invention, the first film forming step forms the first film in a dotted line shape, and the second film forming step forms the first film formed in a dotted line shape. It is desirable to form the second film in a dotted line in a region that is not.

  According to this method, after the first film is formed in a dotted line shape, a linear elongated film is formed by forming the dotted second film in a region where the first film is not formed. Therefore, the opening holes of the mask for forming the first film and the second film can be divided into opening holes without connecting them to one. Thereby, the length of each opening hole can be shortened, and the strength of the beam between the opening holes can be increased.

  The film manufacturing method according to the present invention includes a moving step of relatively moving the substrate and the mask in order to align the position of the opening hole with the position to form the first film or the second film. It is desirable to have more.

  According to this method, since the substrate and the mask are relatively moved by the moving step, the first film and the second film can be divided and formed using the opening holes of the same mask. Thereby, the first film and the second film can be formed with only one mask without using a plurality of masks. Therefore, the cost for manufacturing the mask can be suppressed.

  In the film manufacturing method according to the present invention, the film is preferably formed by a vacuum deposition method.

  According to this method, since the film is formed by the vacuum vapor deposition method, the evaporated material particles as the film base can be vapor-deposited in a predetermined region on the substrate through the opening hole of the mask.

  In the film manufacturing method according to the present invention, it is desirable that the mask is a metal mask and is sucked and fixed to the substrate by a magnetic force.

  According to this method, since the amount of bending of the mask beam is small when the mask is attracted and fixed to the substrate by magnetic force, the mask can be attracted and fixed to the substrate in a normal state. Thereby, a regular-shaped film can be formed between the pixel portion and the pixel portion. As a result, it is possible to prevent a pixel region from being narrowed when the film is not in a regular shape.

  In the film manufacturing method according to the present invention, in the first film formation step, the first film is formed using a first mask to form the first film, and the second film formation step includes the first film formation step. It is desirable to form the second film using a second mask to form two films.

  According to this method, since the first mask and the second mask are separately used to form the first film and the second film, a moving mechanism that moves the substrate and the mask relatively is not used. The membrane can be completed.

  In order to achieve the above object, an electro-optical device according to the present invention is formed using a film manufacturing method.

  According to this, it is possible to provide an electro-optical device having a display area (display unit) with less luminance unevenness (lighting unevenness) without narrowing the pixel area.

  In order to achieve the above object, the mask according to the present invention is used in a film manufacturing method.

  According to this, it is possible to provide a mask capable of forming a film capable of flowing a current necessary for lighting a pixel without narrowing the pixel region.

  Embodiments of a film manufacturing method according to the present invention, an electro-optical device manufactured using the method, and a mask used in the method will be described below with reference to the drawings.

(First embodiment)
FIG. 1 is a schematic plan view showing a structure of an organic EL (Electro Luminescence) device which is one of electro-optical devices. Hereinafter, the structure of the organic EL device excluding the second substrate and the color filter (both see FIG. 2) will be described with reference to FIG.

  As shown in FIG. 1, the organic EL device 11 has, for example, a so-called top emission structure in which emitted light is irradiated upward, and color display is performed by passing white light emitted from the light emitting layer through a color filter. In addition, the organic EL device 11 includes, for example, a plurality of data lines (not shown) and a plurality of scanning lines arranged in a grid pattern on the first substrate 12, and a matrix pixel divided into the data lines and the scanning lines. This is an active matrix type in which a driving TFT (Thin Film Transistor) is connected to each unit 22.

In the organic EL device 11, for example, scanning line drive circuits (not shown) are arranged at both left and right ends of the display area 21 on the first substrate 12. In the organic EL device 11, for example, data line drive circuits (not shown) are arranged above and below the display area 21 in the first substrate 12.
The organic EL device 11 includes a first substrate 12, a pixel electrode (anode) 13, a light emitting layer (organic layer) 14, a common electrode (cathode) 15, and an auxiliary wiring 16 that is a film.

  The first substrate 12 is made of a transparent material such as glass, for example. In the case of the organic EL device 11 having a top emission structure as in this embodiment, the first substrate 12 may be made of an insulating opaque material.

  The pixel electrode (anode) 13 is formed on the first substrate 12 corresponding to the region of the pixel portion 22 (red (R) 22r, green (G) 22g, blue (B) 22b, etc.). The pixel electrode 13 is composed of a transparent electrode, and is, for example, an ITO (Indium Tin Oxide) film. Further, the pixel electrode 13 is not limited to a transparent electrode in the case of the organic EL device 11 having a top emission structure as in the present embodiment. For example, the pixel electrode 13 may be made of an opaque material, or may be made of an opaque material and an opaque material. You may make it comprise by laminating | stacking material.

  The pixel portion 22 is a region in which the pixel electrode 13, the common electrode 15, and the light emitting layer 14 overlap in a plane. The pixel portion 22 emits light from the light emitting layer 14 when a voltage is applied to the pixel electrode 13 and the common electrode 15 (see FIG. 2) disposed above and below the light emitting layer 14. As described above, the pixel portions 22 are arranged in a matrix in the vertical and horizontal directions of the display area 21 so as to be spaced apart from each other, and are red (R) 22r, green (G) 22g, and blue (B) 22b. And so on.

  The light emitting layer (organic layer) 14 is formed on the pixel electrode 13 so as to cover the display region 21, for example, and is made of a known light emitting material. The light emitting layer 14 emits light according to the amount of current flowing through the light emitting layer 14 by the pixel electrode 13 and the common electrode 15.

  The common electrode (cathode) 15 is formed on the light emitting layer 14 so as to cover the light emitting layer 14. That is, the common electrode 15 is a common electrode for each pixel unit 22. The common electrode 15 is formed, for example, by simultaneously depositing magnesium and silver (Mg, Ag) by a vacuum deposition method. Since the organic EL device 11 has a top emission structure, the common electrode 15 has a thin film thickness so that light can be easily transmitted. The film thickness of the common electrode 15 is, for example, 100 mm.

  The auxiliary wiring 16 is linearly elongated in the X direction between the pixel portion 22 and the pixel portion 22 in the display area 21 (between the pixel portions 22 in the Y direction). The auxiliary wiring 16 is provided between the light emitting layer 14 and the common electrode 15. The auxiliary wiring 16 is, for example, an aluminum (Al) wiring that is a low-resistance material. Specifically, by forming the thin common electrode 15 and the auxiliary wiring 16 so as to be electrically connectable, the conductivity of the common electrode 15 is improved (the entire display region 21 is made equipotential), and display is performed. It is possible to suppress luminance unevenness in the region 21. The common electrode 15 and the auxiliary wiring 16 have contact portions at the left and right ends on the outer side of the light emitting layer 14, for example. The auxiliary wiring 16 is formed by, for example, a vacuum evaporation method.

  The length of the auxiliary wiring 16 (the length in the X direction) is, for example, 210 mm. The width (Y direction) of the auxiliary wiring 16 is, for example, 40 μm. A distance A between the auxiliary wiring 16 and the pixel unit 22 is, for example, 18 μm. These dimensions include, for example, the shape accuracy of the vapor deposition mask 55 (see FIG. 4) used in the vacuum vapor deposition process and the first substrate 12 and the vapor deposition mask 55 so that the region of the pixel portion 22 and the auxiliary wiring 16 do not overlap. It is determined in consideration of the alignment error. Further, the auxiliary wiring 16 is required to be straightly traveling so that the auxiliary wiring 16 does not overlap the region of the pixel portion 22, and shape accuracy is required to improve the conductivity of the common electrode 15. .

  As described above, by forming the auxiliary wiring 16 between the pixel portion 22 and the pixel portion 22 (between the pixel portions 22 in the Y direction) in the X direction in a normal state (straightness, shape accuracy, etc.). In addition, it is possible to emit light efficiently without reducing the light emitting area of the pixel portion 22 and display with suppressing luminance unevenness.

  FIG. 2 is a schematic cross-sectional view showing the structure of the organic EL device. Hereinafter, the structure of the organic EL device will be described with reference to FIG.

  As shown in FIG. 2, the organic EL device 11 emits light having wavelengths of red (R), green (G), and blue (B) via a color filter 31, for example, so that full color display is performed. It is configured to be able to. The organic EL device 11 includes a first substrate 12, a driving TFT formation layer 32, a pixel electrode 13, a bank 33, a light emitting layer 14, an auxiliary wiring 16, a common electrode 15, a sealing layer 34, The second substrate 35 and the color filter 31 are included.

  The driving TFT formation layer 32 is formed with a driving TFT (not shown) and is disposed on the first substrate 12. Specifically, a base insulating film made of, for example, a silicon oxide film is formed on the first substrate 12, and a driving TFT is formed on the base insulating film. An insulating film is formed on the driving TFT so as to cover the entire first substrate 12. The driving TFT is electrically connected to the pixel electrode 13 through a contact hole.

  The bank 33 is used to determine the shape of the pixel portion 22 and is formed along the peripheral edge of the pixel electrode 13.

  The light emitting layer 14 is composed of a plurality of organic layers including a light emitting layer, and is formed between the pixel electrode 13 and the common electrode 15. The light emitting layer 14 is formed using, for example, a vacuum deposition method. The light emitting layer 14 emits white light by, for example, stacking a plurality of light emitting material layers. Note that the light emitting layer 14 is not limited to emitting white light by a plurality of light emitting material layers, and may be made to emit white light by a single light emitting material layer.

As described above, the auxiliary wiring 16 is formed between the light emitting layer 14 and the common electrode 15, and is formed above the bank 33 on the light emitting layer 14. That is, since the auxiliary wiring 16 is not formed so as to overlap the area of the pixel portion 22 in a plane, light can be emitted without blocking the light emitting area.
Further, as described above, since the auxiliary wiring 16 is electrically connected to the common electrode 15 to reduce the electrical resistance, the voltage drop generated in the common electrode 15 can be reduced. Thereby, display unevenness (luminance unevenness) in the display area 21 can be suppressed.

  The sealing layer 34 is formed on the common electrode 15 using a known material. By forming the sealing layer 34 on the common electrode 15, it is possible to prevent the common electrode 15 from being corroded.

  The second substrate 35 is disposed at a position facing the sealing layer 34 of the first substrate 12. The second substrate 35 is a glass substrate, for example, and is used for fixing the color filter 31.

  The color filter 31 is provided in a region corresponding to each pixel unit 22 on the sealing layer 34 side in the second substrate 35. The color filter 31 includes a red (R) color filter 31r, a green (G) color filter 31g, and a blue (B) color filter 31b. On the second substrate 35, these three color filters 31r, 31g, 31b and a black matrix for light shielding (not shown) are formed. The organic EL device 11 colors white light emitted from the light emitting layer 14 of each pixel unit 22 by passing through the respective color filters 31r, 31g, and 31b, and performs color display by combining the light of each color. be able to.

  As described above, in the organic EL device 11, the auxiliary wiring 16 that complements the common electrode 15 is formed above the bank 33 corresponding to the non-display area on the light emitting layer 14, so that the voltage drop in the common electrode 15 is suppressed. can do. Thereby, it is possible to make the light emission luminance of each pixel portion 22 uniform in the display area 21, and to prevent the occurrence of display unevenness.

  FIG. 3 is a schematic side view showing the structure of the organic EL device until the auxiliary wiring is formed. 3A is a schematic side view as viewed from the Y direction side in FIG. 1, and FIG. 3B is a schematic side view as viewed from the X direction side in FIG. Hereinafter, the structure of the organic EL device until the auxiliary wiring is formed will be described with reference to FIG. For convenience of explaining the formation of the auxiliary wiring described later, films other than the auxiliary wiring will be described in a simplified manner.

  As shown in FIG. 3, the organic EL device 11 includes a first substrate 12, a driving TFT forming layer 32, a light emitting layer forming layer 41, a first auxiliary wiring 16a that is a first film, and a second film. A second auxiliary wiring 16b.

  As described above, the driving TFT formation layer 32 has a driving TFT (not shown) formed on the first substrate 12.

The light emitting layer forming layer 41 is a forming layer from the pixel electrode 13 and the bank 33 to the light emitting layer 14 as described above, and detailed illustration thereof is omitted. As described above, the pixel electrode 13 (see FIG. 2) of the light emitting layer forming layer 41 is electrically connected to the driving TFT of the driving TFT forming layer 32 through a contact hole.
The first substrate 12, the driving TFT formation layer 32, and the light emitting layer formation layer 41 are combined to form a substrate 52.

  The first auxiliary wiring 16 a is a film formed in a dotted line configuration that constitutes the auxiliary wiring 16. The first auxiliary wiring 16a is formed for the first time, for example, by a vacuum deposition method. The length of the first auxiliary wiring 16a is, for example, 10 mm. The thickness of the first auxiliary wiring 16a is, for example, 4000 mm.

  The second auxiliary wiring 16b is a film formed in a region where the first auxiliary wiring 16a constituting the auxiliary wiring 16 is not formed. The second auxiliary wiring 16b is a part formed for the second time by, for example, a vacuum deposition method. The length of the second auxiliary wiring 16b is, for example, 10.1 mm. The thickness of the second auxiliary wiring 16b is, for example, 4000 mm like the first auxiliary wiring 16a. When the auxiliary wiring 16 is divided and formed, both end portions of the second auxiliary wiring 16b are overlapped with the first auxiliary wiring 16a, so that the first auxiliary wiring 16a and the second auxiliary wiring 16b can be securely connected. It becomes possible to conduct, and it can be set as one auxiliary wiring 16 (refer FIG. 1) electrically connected.

  Specifically, the overlap amount B between the second auxiliary wiring 16b and the first auxiliary wiring 16a is, for example, 10 μm to 100 μm. The thickness of the portion where the second auxiliary wiring 16b and the first auxiliary wiring 16a overlap is, for example, 8000 mm.

  FIG. 4 is a side view schematically showing the structure of the vacuum vapor deposition apparatus. Hereinafter, the structure of the vacuum evaporation apparatus will be described with reference to FIG.

  As shown in FIG. 4, the vacuum deposition apparatus 51 is used, for example, to form the auxiliary wiring 16 on the substrate 52, and includes a vacuum chamber 53, a magnet stage 54, a deposition mask 55, a material container 56, A heating unit 57 and a vacuum pump 58 are included.

  The vacuum chamber 53 has a sealed hollow space, and is connected to a vacuum pump 58 via an exhaust pipe 59 in order to make the inside vacuum.

  The magnet stage 54 is disposed on the upper side in the vacuum chamber 53 and is used for fixing the substrate 52 by a fixing mechanism (not shown). In addition, the magnet stage 54 is used to fix the vapor deposition mask 55 to the substrate 52 by magnetic force.

  As described above, the vapor deposition mask 55 is attracted and fixed to the substrate 52 by the magnetic force of the magnet stage 54. In the vapor deposition mask 55, an opening hole 61 (see FIG. 5) having the same shape as the auxiliary wirings 16a and 16b vapor deposited on the substrate 52 is formed. On the substrate 52, the material particles 50a pass through the opening 61 to be deposited, so that the material particles 50a are deposited in a desired shape. The vacuum chamber 53 is provided with a transfer mechanism (not shown) for relatively moving the positions of the vapor deposition mask 55 and the substrate 52.

  For example, the transfer mechanism can move the vapor deposition mask 55 relative to the substrate 52. For example, the vapor deposition mask 55 can be moved by turning off the magnetic force of the magnet stage 54. The vacuum deposition apparatus 51 has an alignment mechanism (not shown) for aligning the positions of the substrate 52 and the deposition mask 55.

For example, the alignment mechanism can adjust the position of the vapor deposition mask 55 in the X, Y, and θ directions. By adjusting the position of the vapor deposition mask 55 with respect to the substrate 52 by the alignment mechanism, for example, the position for forming the auxiliary wiring 16 on the substrate 52 and the position of the opening hole 61 of the vapor deposition mask 55 can be matched. Specifically, the substrate 52 has alignment marks formed on both sides of the substrate 52, for example. On the other hand, a round hole is formed in the vapor deposition mask 55 at a position corresponding to the position of the alignment mark on both sides of the vapor deposition mask 55.
Further, in order to align the position of the substrate 52 and the vapor deposition mask 55, the vacuum vapor deposition device 51 is provided with a CCD camera (not shown) above the vacuum chamber 53, for example.

  The CCD camera is used, for example, to detect the positions of the substrate 52 and the vapor deposition mask 55 through a viewing window (not shown) provided in the vacuum chamber 53. Based on the detected mutual position information, alignment is performed by the alignment mechanism so that the position of the vapor deposition mask 55 matches the substrate 52.

  The material container 56 is disposed on the lower side facing the substrate 52 and the vapor deposition mask 55 in the vacuum chamber 53. The material container 56 stores (stores) a film material 50 that is a base of the auxiliary wiring 16 to be deposited on the substrate 52. The film material 50 is, for example, aluminum (Al).

  The heating unit 57 is arranged to receive the material container 56 on the lower side in the vacuum chamber 53, and is used for heating and evaporating (vaporizing) the film material 50 contained in the material container 56. The heating unit 57 is connected to a power supply unit (not shown) for heating the heating unit 57.

  The vacuum pump 58 is connected to the inside of the vacuum chamber 53 via the exhaust pipe 59 as described above. The vacuum pump 58 is used to evacuate the material particles 50 a that have not been deposited on the substrate 52 while making the vacuum chamber 53 in a vacuum state.

  FIG. 5 is a plan view schematically showing the configuration of the mask. Hereinafter, the configuration of the mask will be described with reference to FIG.

  As shown in FIG. 5, the vapor deposition mask 55 is used to form the auxiliary wiring 16 on the substrate 52 as described above, and a plurality of opening holes 61 are formed in dotted lines in the X direction. Specifically, one auxiliary wiring 16 is formed by performing the vapor deposition process in two steps using the vapor deposition mask 55. The material of the vapor deposition mask 55 is, for example, stainless steel (SUS), invar (nickel steel), 42 alloy (low expansion coefficient), nickel alloy, or the like.

The thickness of the vapor deposition mask 55 is desirably thin, for example, 50 μm. Specifically, when the vapor deposition mask 55 is thick, the material particles 50a (see FIG. 4) that do not enter straight into the opening hole 61 have a large amount of shadow (wall) corresponding to the thickness of the vapor deposition mask 55. In some cases, vapor deposition is not performed along the shape of the opening hole 61 and a regular shape is not obtained.
On the other hand, when the vapor deposition mask 55 is thin, even if there are material particles 50a that do not enter the opening hole 61 straight, the amount of shadow (wall) corresponding to the thickness of the vapor deposition mask 55 is small. It can be deposited in a shape close to the shape of the hole 61.

  The opening hole 61 is a slit-like long hole, for example, having a length L of 10 mm and a width W of 40 μm. The width W is calculated based on the width that can function as the auxiliary wiring 16, the manufacturing accuracy and the alignment tolerance that can secure the area of the pixel portion 22, and is, for example, in the range of 5 μm to 60 μm. I just need it. The distance M between the opening hole 61 and the opening hole 61 is, for example, 9.9 mm. That is, when vacuum deposition is performed on the substrate 52 using the deposition mask 55, the 10 mm first auxiliary wiring 16a (see FIG. 3) is spaced by a distance of 9.9 mm and is dotted in the X direction (lateral direction). It is vapor-deposited in the shape.

  A plurality of dotted opening holes 61 are formed in the Y direction of the vapor deposition mask 55. The pitch dimension P in the Y direction (vertical direction) between the opening hole 61 and the opening hole 61 is, for example, 210 μm. Moreover, the dimension Q of the beam between the opening holes 61 is, for example, 170 μm. The pitch dimension P varies depending on the definition of the organic EL device 11.

  As described above, when the auxiliary wiring 16 is formed, it is not divided into one elongated opening hole (for example, 210 mm × 40 μm) equivalent to the shape of the auxiliary wiring 16 by dividing the auxiliary wiring 16 into two parts. Thus, the opening hole 61 having a shortened shape (10 mm × 40 μm) can be formed. As a result, a beam having a distance M can be newly created, and the strength of the beam having a distance Q between the opening hole 61 and the opening hole 61 can be increased, and the amount of bending of the beam by its own weight is reduced. be able to. As a result, the vapor deposition mask 55 can be brought into close contact with the substrate 52 in a normal state.

  FIG. 6 is a schematic view showing a method of manufacturing an auxiliary wiring, which is a film for performing vacuum vapor deposition using a vapor deposition mask, in the order of steps. (A), (c), (e) is a schematic plan view which shows the manufacturing method of auxiliary wiring to process order. (B), (d), (f) is a schematic side view which shows the manufacturing method of auxiliary wiring to process order. Hereinafter, a method for manufacturing the auxiliary wiring will be described with reference to FIG.

As shown in FIG. 6, in the manufacturing method of the auxiliary wiring 16, first, in step 11 (first film forming step), the first auxiliary wiring 16 a in the auxiliary wiring 16 is formed. Specifically, first, the vapor deposition mask 55 is attracted to the substrate 52 by the magnetic force of the magnet stage 54 (see FIG. 4). At this time, since the opening hole 61 of the vapor deposition mask 55 is divided into a plurality of parts, the amount of bending of the beam (distance M, distance Q) by its own weight is reduced. Thereby, when adsorbing and fixing a vapor deposition mask, the shape of the opening hole 61 can be maintained in a regular state.
The vapor deposition mask 55 may be fixed by suction while being pulled from the periphery of the vapor deposition mask 55 under tension.

  Next, the film material 50 (aluminum material) that is a raw material of the auxiliary wiring 16 is heated by the heating unit 57 in the vacuum chamber 53 of the vacuum vapor deposition apparatus 51. Thereby, the film material 50 evaporates, and the inside of the vacuum chamber 53 becomes an atmosphere of the material particles 50a. The material particles 50 a pass through the opening hole 61 of the vapor deposition mask 55 and are vapor deposited on the substrate 52. At this time, since the shape of the opening hole 61 of the vapor deposition mask 55 is in a normal state, the first auxiliary wiring 16 a (material particle 50 a) having substantially the same shape as the opening hole 61 is formed on the substrate 52. A dotted line is formed between the pixel portion 22 and the pixel portion 22 in the direction.

  In step 12 (moving step), the vapor deposition mask 55 is moved in the X direction while the substrate 52 is fixed. Specifically, in order to complete the auxiliary wiring 16, the vapor deposition mask 55 is moved so that the opening hole 61 is located at a place so as to fill the space between the first auxiliary wirings 16 a formed in Step 11. When the vapor deposition mask 55 is moved, the magnetic force by the magnet stage 54 is turned off and the heating of the film material 50 is stopped. The distance for moving the vapor deposition mask 55 in the X direction is, for example, 9.95 mm.

Since the substrate 52 and the vapor deposition mask 55 are formed with alignment marks (not shown) as described above, it is possible to obtain mutual positional information by a CCD camera provided above the vacuum chamber 53. It has become. Thereby, the vapor deposition mask 55 can be adjusted to the regular position for vapor deposition for the second time by the alignment mechanism.
The substrate 52 is formed with two alignment marks that are aligned when the first deposition is performed and two alignment marks that are aligned when the second deposition is performed. A round hole that can be used in common is formed in the vapor deposition mask 55.

  In step 13 (second film formation step), the second auxiliary wiring 16b in the auxiliary wiring 16 is formed. Specifically, first, as in step 11, the deposition mask 55 after being moved is attracted to the substrate 52 by the magnetic force of the magnet stage 54. At this time, since the opening hole 61 of the vapor deposition mask 55 is divided into a plurality of parts as in the step 11, the amount of bending of the beam (distance M, distance Q) by its own weight is reduced. Thereby, when adsorbing and fixing a vapor deposition mask, the shape of the opening hole 61 can be maintained in a regular state.

  Next, the film material 50 is heated to make the inside of the vacuum chamber 53 have an atmosphere of the material particles 50a. The material particles 50 a pass through the opening holes 61 of the deposition mask 55 and are deposited between the first auxiliary wirings 16 a on the substrate 52. At this time, since the shape of the opening hole 61 of the vapor deposition mask 55 is in a regular state, the second auxiliary wiring 16b (material particle 50a) having the same shape as the regular opening hole 61 is formed in a dotted line shape. The

  In addition, a protruding auxiliary wiring is formed in a portion where the first auxiliary wiring 16a and the second auxiliary wiring 16b are overlapped and deposited. This is to surely connect the first auxiliary wiring 16a and the second auxiliary wiring 16b to each other, and it is sufficient that the resistance of the auxiliary wiring 16 is not increased.

  Further, when the vapor deposition process is performed for the second time, a gap corresponding to the thickness of the first auxiliary wiring 16a deposited for the first time may occur between the substrate 52 and the vapor deposition mask 55. An area that cannot be reduced can be secured, and the auxiliary wiring 16 does not have to overlap the pixel portion 22. The gap between the substrate 52 and the vapor deposition mask 55 is preferably 10 μm or less, for example.

  As described above, the auxiliary wiring 16 is not formed once by using a vapor deposition mask having an elongated opening hole, but is formed by dividing it into two times, so that the length of the opening hole 61 is increased. Can be shortened. Thereby, the amount of bending of the beam due to its own weight can be reduced, and when the vapor deposition mask 55 is attracted to the substrate 52 by magnetic force, it can be fixed close to the normal state (shape). As a result, it is possible to form the auxiliary wirings 16a and 16b along the opening hole 61 having a regular shape.

  The electro-optical device to which the film manufacturing method according to the present invention can be applied includes, for example, a liquid crystal device, an electrophoretic display device, a plasma display device, an SED (Surface Conduction) in addition to the organic EL device 11 described above. Electron-emitter display (surface electric field display), FED (field emission display), and the like.

As described above in detail, according to the present embodiment, the following effects can be obtained.
(1) According to the present embodiment, the second film formation step (step 13) is connected to the dotted first auxiliary wiring 16a formed in the first film formation step (step 11), and the dotted second line Since the auxiliary wiring 16b is formed and the auxiliary wiring 16 is completed, the length of the opening hole of the vapor deposition mask 55 can be shortened to an area where the auxiliary wiring 16 is divided. Therefore, the amount of bending of the beam between the opening holes 61 of the vapor deposition mask 55 can be reduced, and the vapor deposition mask 55 can be fixed in a normal state. As a result, the auxiliary wiring 16 having a regular shape can be formed between the pixel portions 22, and a necessary current can be passed through each pixel portion 22 (the entire display region 21 can be equipotential). As a result, luminance unevenness in the display region 21 due to the auxiliary wiring 16 not being formed in a normal state (blurred or thinned) can be suppressed.
In addition, since the auxiliary wiring 16 is made of aluminum which is a highly conductive material, the resistance of the common electrode 15 can be reduced.

  (2) According to this embodiment, since the above-described vapor deposition mask 55 can be adsorbed to the substrate 52 in a normal state, the auxiliary wirings 16a and 16b having a normal shape are vapor-deposited between the pixel portions 22 in the Y direction. be able to. Thereby, it is possible to prevent the deposited auxiliary wirings 16a and 16b from being applied to the pixel portion 22, and to prevent the light emitting region of the pixel portion 22 from being narrowed. As a result, the aperture ratio of the top emission structure, which is the original purpose, can be increased (light can be emitted efficiently).

  (3) According to the present embodiment, after the first auxiliary wiring 16a is formed, the vapor deposition mask 55 is moved with respect to the substrate 52 using the moving mechanism in the moving step (step 12), and the first auxiliary wiring 16a is moved. Since the second auxiliary wiring 16b can be formed in a region where no is formed, the two auxiliary wirings 16a and 16b can be divided and formed with only one vapor deposition mask 55. Therefore, compared with manufacturing a plurality of vapor deposition masks, the cost for manufacturing the vapor deposition mask 55 can be suppressed.

(Second Embodiment)
FIG. 7 is a plan view schematically showing the configuration of the vapor deposition mask. FIG. 7A is a schematic plan view showing the first vapor deposition mask. FIG. 7B is a schematic plan view showing the second vapor deposition mask. Hereinafter, the first vapor deposition mask and the second vapor deposition mask will be described with reference to FIG.
In order to form the auxiliary wiring 16 by dividing into two times, the single vapor deposition mask 55 is used as in the first embodiment, whereas in the second embodiment, the two vapor deposition masks 72 and 73 are used. The portion where the auxiliary wiring 16 is formed using is different from the first embodiment.

  As shown in FIG. 7, the auxiliary wiring 16 according to the present embodiment is formed in such a manner that the first auxiliary wiring 16a and the second auxiliary wiring 16b are separately formed, and the first auxiliary wiring 16a and the second auxiliary wiring 16b are separately deposited by using a dedicated deposition mask. A first vapor deposition mask 72 and a second vapor deposition mask 73 are used.

  The first vapor deposition mask 72 is used for vapor deposition of the first auxiliary wiring 16a, and a plurality of first opening holes 74 are formed in dotted lines in the X direction. The material of the first vapor deposition mask 72 is, for example, stainless steel (SUS), invar (nickel steel), 42 alloy (low expansion coefficient), nickel alloy, and the like, similar to the vapor deposition mask 55 of the first embodiment. The thickness of the first vapor deposition mask 72 is, for example, 50 μm, as in the first embodiment.

  The 1st opening hole 74 is formed in the dimension similar to the opening hole 61 of the vapor deposition mask 55 used in 1st Embodiment. For example, the first opening hole 74 is formed with a length L of 10 mm and a width W of 40 μm. The distance M is, for example, 9.9 mm. The pitch dimension P is, for example, 210 μm, and the beam dimension Q between the first opening holes 74 is, for example, 170 μm.

  The second vapor deposition mask 73 is used for vapor deposition of the second auxiliary wiring 16b, and a plurality of second opening holes 75 are formed in dotted lines in the X direction. The material and thickness of the second vapor deposition mask 73 are the same as those of the first vapor deposition mask 72.

The second opening hole 75 is formed, for example, at a position shifted by 9.95 mm in the X direction with respect to the first opening hole 74 of the first vapor deposition mask 72 in order to form the second auxiliary wiring 16b. In other words, when the first vapor deposition mask 72 and the second vapor deposition mask 73 are overlapped, the shape connecting the respective opening holes 74 and 75 is formed to be the shape of the auxiliary wiring 16. Specifically, when the first vapor deposition mask 72 and the second vapor deposition mask 73 are overlapped, the first auxiliary wiring 16a and the second auxiliary wiring 16b are surely located at the boundary between the first opening hole 74 and the second opening hole 75. In order to establish a conductive connection, an overlapping region is formed.
By using the first vapor deposition mask 72 and the second vapor deposition mask 73, even if the transfer mechanism for moving the vapor deposition mask in the X direction is not provided in the vacuum vapor deposition apparatus 51, the auxiliary wiring 16 is divided and vaporized. It becomes possible to make it.

  The dimension of the second opening hole 75 is the same as the dimension of the first opening hole 74. Specifically, for example, the length L is 10 mm and the width W is 40 μm. The distance M is, for example, 9.9 mm. When vacuum deposition is performed on the substrate 52 by using the second deposition mask 73, the second auxiliary wiring 16b can be deposited between the dotted first auxiliary wirings 16a (see FIG. 3). Yes.

  As described above, when the auxiliary wiring 16 is formed, it is not divided into one elongated opening hole (for example, 210 mm × 40 μm) equivalent to the shape of the auxiliary wiring 16 by dividing the auxiliary wiring 16 into two parts. Thus, the first opening hole 74 having a shortened shape (10 mm × 40 μm) can be formed. As a result, a beam having a distance M can be newly formed, and a beam having a distance Q between the first opening hole 74 and the first opening hole 74 (the same applies to the second opening hole 75 and the second opening hole 75). The strength can be increased, and the amount of bending of the beam by its own weight can be reduced. As a result, the vapor deposition masks 72 and 73 can be brought into close contact with the substrate 52 in a normal state.

  FIG. 8 is a schematic view showing a method of manufacturing the auxiliary wiring in the order of steps. (A), (c), (d), (e) is a schematic plan view which shows the manufacturing method of auxiliary wiring in order of a process. (B), (f) is a schematic side view which shows the manufacturing method of auxiliary wiring to process order. Hereinafter, a method for manufacturing the auxiliary wiring will be described with reference to FIG.

  As shown in FIG. 8, in the manufacturing method of the auxiliary wiring 16, first, in step 21 (first film forming step), the first auxiliary wiring 16a in the auxiliary wiring 16 is formed. Specifically, as in the first embodiment, first, the first vapor deposition mask 72 is attracted to the substrate 52 by the magnetic force of the magnet stage 54 (see FIG. 4). At this time, since the first opening hole 74 of the first vapor deposition mask 72 is divided into a plurality of parts, the amount of bending of the beam (distance M, distance Q) is reduced by its own weight. Thereby, when the 1st vapor deposition mask 72 is suction-fixed, the shape of the 1st opening hole 74 can be maintained in a regular state.

  Next, the film material 50 (aluminum material) that is a raw material of the auxiliary wiring 16 is heated by the heating unit 57 in the vacuum chamber 53 of the vacuum vapor deposition apparatus 51. Thereby, the film material 50 evaporates, and the inside of the vacuum chamber 53 becomes an atmosphere of the material particles 50a. The material particles 50 a pass through the first opening holes 74 of the first vapor deposition mask 72 and are vapor deposited on the substrate 52. At this time, since the shape of the first opening hole 74 of the first vapor deposition mask 72 is in a normal state, the first auxiliary wiring 16a (material particle 50a) having substantially the same shape as the shape of the first opening hole 74 is formed. A dotted line is formed between the pixel unit 22 and the pixel unit 22 in the Y direction on the substrate 52.

  In step 22, the first vapor deposition mask 72 is replaced with the second vapor deposition mask 73. First, the magnetic force by the magnet stage 54 is turned off, and the heating of the film material 50 is stopped. Next, the first vapor deposition mask 72 is replaced with the second vapor deposition mask 73.

  Since an alignment mark (not shown) is formed on the substrate 52 and the second vapor deposition mask 73, it is possible to obtain mutual positional information by a CCD camera (not shown) provided above the vacuum chamber 53. ing. Thereby, the second vapor deposition mask 73 can be aligned with the substrate 52 by the alignment mechanism.

  In step 23 (second film formation step), the second auxiliary wiring 16b in the auxiliary wiring 16 is formed. Specifically, first, the second deposition mask 73 after replacement is attracted to the substrate 52 by the magnetic force of the magnet stage 54 as in the step 21. At this time, similarly to the first vapor deposition mask 72, the second opening hole 75 of the second vapor deposition mask 73 is divided into a plurality of parts, so that the amount of deflection of the beam (distance M, distance Q) by its own weight. Is decreasing. Thereby, when adsorbing-fixing a vapor deposition mask, the shape of the 2nd opening hole 75 can be maintained in a regular state.

  Next, the material particles 50 a are vapor-deposited on a predetermined region of the substrate 52 through the second opening hole 75 of the second vapor deposition mask 73 by the same method as in the first embodiment. Thus, the second auxiliary wiring 16b is formed so as to fill the space between the dotted first auxiliary wirings 16a formed in the step 21. At this time, since the shape of the second opening hole 75 of the second vapor deposition mask 73 is in a normal state, the second auxiliary wiring 16b (material particle 50a) having the same shape as the shape of the normal second opening hole 75 is obtained. Is formed.

  As described above, the auxiliary wiring 16 is formed not by using a vapor deposition mask having an elongated opening hole at a time but by dividing the auxiliary wiring 16 into two times, thereby forming the first opening hole 74 and the auxiliary wiring 16. The length of the second opening hole 75 can be shortened. Thereby, the amount of bending of the beam due to its own weight can be reduced, and when the first vapor deposition mask 72 or the second vapor deposition mask 73 is attracted to the substrate 52 by the magnetic force, the beam is fixed close to the normal state (shape). can do. Thereby, the first auxiliary wiring 16a and the second auxiliary wiring 16b along the first opening hole 74 and the second opening hole 75 having a regular shape can be formed.

As described above in detail, according to this embodiment, in addition to the effects (1) and (2) of the first embodiment, the following effects can be obtained.
(4) According to the present embodiment, since the first auxiliary wiring 16a and the second auxiliary wiring 16b are formed using the different first vapor deposition mask 72 and second vapor deposition mask 73, respectively, one vapor deposition is performed. The operation of moving the mask can be eliminated. Therefore, even if the vacuum evaporation apparatus 51 is not provided with a transfer mechanism, the auxiliary wiring 16 can be completed by forming the first auxiliary wiring 16a and the second auxiliary wiring 16b on the substrate 52. .

In addition, 1st Embodiment and 2nd Embodiment are not limited above, It can also implement with the following forms.
(Variation 1) As described above, instead of forming the auxiliary wiring 16 between the light emitting layer 14 and the common electrode 15 (see FIG. 2), on the common electrode 15 (sealing with the common electrode 15). (Between the layers 34). In this case, it is sufficient that at least the auxiliary wiring 16 and the pixel electrode 13 are electrically separated and the auxiliary wiring 16 and the common electrode 15 are electrically connected.

  (Modification 2) In the first embodiment, when the second auxiliary wiring 16b is formed after the first auxiliary wiring 16a is formed, the vapor deposition mask 55 is moved relative to the substrate 52. Instead of this, the substrate 52 may be moved relative to the vapor deposition mask 55. Moreover, you may make it move both the vapor deposition mask 55 and the board | substrate 52 relatively.

  (Modification 3) In the first embodiment described above, the alignment mechanism adjusts the position of the vapor deposition mask 55 with respect to the fixed substrate 52 (the same applies to the first vapor deposition mask 72 and the second vapor deposition mask 73 in the second embodiment). Instead of this, the position of the substrate 52 may be adjusted with respect to the vapor deposition mask 55 (the same applies to the first vapor deposition mask 72 and the second vapor deposition mask 73).

  (Modification 4) As described above, instead of forming the auxiliary wiring 16 by dividing it into two times, it is formed in a plurality of times, for example, three times or four times. You may make it do. According to this, although the number of times of vapor deposition increases, beams around the opening hole 61, the first opening hole 74, and the second opening hole 75 formed in the vapor deposition mask 55, the first vapor deposition mask 72, and the second vapor deposition mask 73. The vapor deposition masks 55, 72, 73 can be adsorbed and fixed to the substrate 52 in a better state.

  (Modification 5) In the first embodiment described above, after the deposition mask 55 is moved in the X direction by the transfer mechanism, the positions of the substrate 52 and the deposition mask 55 are aligned by the CCD camera and the alignment mechanism. Instead of this, instead of using the CCD camera and the alignment mechanism, the deposition mask 55 may be merely moved in the X direction by the pitch (to the position where deposition is performed for the second time) by the transfer mechanism. According to this, although the positional relationship between the substrate 52 and the vapor deposition mask 55 depends on the movement accuracy (mechanical accuracy) of the transfer mechanism, it is sufficient that the auxiliary wiring 16 does not overlap the pixel portion 22, and the alignment time is shortened. can do.

  (Modification 6) In the second embodiment described above, two vacuum chambers are provided in place of replacing the first vapor deposition mask 72 with the second vapor deposition mask 73 in the same vacuum chamber 53. One vapor deposition mask may be arranged exclusively for the vacuum chamber. According to this, although the operation | work which changes to one vacuum chamber is needed, the operation | work which replace | exchanges a vapor deposition mask can be skipped. In addition, another material can be deposited without taking the time to change the material, such as when depositing a different material on the substrate 52.

  (Modification 7) As described above, the present invention is not limited to the formation of the elongated auxiliary wiring 16 using the vapor deposition masks 55, 72, 73, but may be applied to elongated films for other uses. Good.

  (Modification 8) As described above, the auxiliary wiring 16 is not limited to being formed by the vacuum vapor deposition method, and any method can be used as long as the auxiliary wiring 16 can be formed using a mask. For example, the auxiliary wiring 16 is formed by the sputtering vapor deposition method. You may do it.

The schematic plan view which shows the structure of the organic electroluminescent apparatus in one Embodiment. The schematic cross section which shows the structure of an organic electroluminescent apparatus. The schematic cross section which shows the structure of the organic electroluminescent apparatus until it forms auxiliary wiring. (A) is the model side view which looked at the organic electroluminescent apparatus in FIG. 1 from the Y direction. (B) is the model side view which looked at the organic electroluminescent apparatus in FIG. 1 from the X direction. The side view which shows the structure of a vacuum evaporation system typically. The schematic plan view which shows the structure of a mask. The schematic diagram which shows the manufacturing method of auxiliary wiring in order of a process. (A), (c), (e) is a schematic top view which shows the manufacturing method of auxiliary wiring in order of a process. (B), (d), (f) is a schematic side view which shows the manufacturing method of auxiliary wiring in order of a process. The schematic plan view which shows the structure of a mask. (A) is a schematic plan view which shows the structure of a 1st vapor deposition mask. (B) is a schematic top view which shows the structure of a 2nd vapor deposition mask. The schematic diagram which shows the manufacturing method of auxiliary wiring in order of a process. (A), (c), (d), (e) is a schematic plan view which shows the manufacturing method of auxiliary wiring in order of a process. (B), (f) is a schematic side view which shows the manufacturing method of auxiliary wiring in order of a process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Organic EL apparatus, 12 ... 1st board | substrate, 13 ... Pixel electrode (anode), 14 ... Light emitting layer (organic layer), 15 ... Common electrode (cathode), 16 ... Auxiliary wiring which is a film | membrane, 16a ... 1st film | membrane 1st auxiliary wiring, 16b ... 2nd auxiliary wiring as second film, 21 ... display area, 22, 22r, 22g, 22b ... pixel portion, 31, 31r, 31g, 31b ... color filter, 32 ... for driving TFT forming layer, 33 ... bank, 34 ... sealing layer, 35 ... second substrate, 41 ... light emitting layer forming layer, 50 ... film material, 50a ... material particles, 51 ... vacuum deposition apparatus, 52 ... substrate, 53 ... vacuum Chamber, 54 ... Magnet stage, 55 ... Deposition mask, 56 ... Material container, 57 ... Heating unit, 58 ... Vacuum pump, 59 ... Exhaust pipe, 61 ... Opening hole, 72 ... First deposition mask, 73 ... Second deposition mask 74 ... 1st opening hole, 75 ... 2nd Mouth hole.

Claims (2)

An opening corresponding to the shape of the first film divided in the longitudinal direction of the film was formed in order to form a linear elongated film between the pixel part formed on the substrate. A first film forming step of forming the first film on the substrate using a mask;
A second film forming step of forming the second film on the substrate using a mask in which an opening corresponding to the shape of the second film divided in the longitudinal direction in the film is formed;
I have a,
In the first film forming step, a first mask that is a metal mask is adsorbed and fixed to the substrate by a magnetic force to form the first film,
In the second film forming step, the second film is formed by adhering and fixing a second mask, which is a metal mask different from the first mask, to the substrate by a magnetic force . A pixel portion is formed on a substrate where a pixel electrode, a common electrode formed at a position facing the pixel electrode, and a light emitting layer provided between the pixel electrode and the common electrode overlap. In order to pass a current necessary for the pixel to emit light in a normal state in a boundary region between the pixel portion and the pixel portion, a linear elongated film in contact with the common electrode is formed. A method for producing a film to be formed, comprising:
A first film forming step of forming the first film on the substrate using a mask in which an opening corresponding to the shape of the first film divided in the longitudinal direction of the film is formed;
A second film forming step of forming the second film on the substrate using a mask in which an opening corresponding to the shape of the second film divided in the longitudinal direction in the film is formed;
I have a,
The film is an auxiliary wiring made of a metal film,
In the first film forming step, a first mask that is a metal mask is adsorbed and fixed to the substrate by a magnetic force to form the first film,
In the second film forming step, the second film is formed by adhering and fixing a second mask, which is a metal mask different from the first mask, to the substrate by a magnetic force .

Images