CN112779499A

CN112779499A - Vapor deposition device and method for manufacturing display device

Info

Publication number: CN112779499A
Application number: CN202011180807.XA
Authority: CN
Inventors: 上村孝明; 平田教行; 水越宽文
Original assignee: Japan Display Inc
Current assignee: Japan Display Inc
Priority date: 2019-11-07
Filing date: 2020-10-29
Publication date: 2021-05-11
Anticipated expiration: 2040-10-29
Also published as: JP2021075750A; KR102583616B1; KR20210055600A; CN112779499B; JP7406958B2

Abstract

The invention provides a vapor deposition device and a method for manufacturing a display device, wherein the adjustment time of a gap between a substrate and a vapor deposition mask is shortened.Further, the present invention provides a vapor deposition device and a method for manufacturing a display device, in which defects in a vapor deposition process are reduced. A method for manufacturing a display device by depositing an organic material on a substrate using a deposition mask, wherein the deposition mask is disposed so as to face the substrate, and a first gap (l) between the substrate at a first position and the deposition mask is detected₁) Detecting a second gap (l) between the substrate and the vapor deposition mask at the second position₂) A first gap (l)₁) And the second gap (l)₂) The adjustment is made to satisfy the formula 3,

Description

Vapor deposition device and method for manufacturing display device

Technical Field

One embodiment of the present invention relates to a vapor deposition device. One embodiment of the present invention relates to a method for manufacturing a display device using a vapor deposition device.

Background

As a Display device, an Organic EL Display device (Organic Electroluminescence Display) using an Organic Electroluminescence material (Organic EL material) as a light emitting element (Organic EL element) in a Display region is known. An organic EL display device is a so-called self-luminous display device that realizes display by causing an organic EL material to emit light.

The organic EL element includes an organic EL material between an anode (anode) and a cathode (cathode). As the organic EL material, a low molecular material or a high molecular material is known, but a low molecular material capable of forming a thin film by a vapor deposition method is often used.

As one of vapor deposition apparatuses used in the vapor deposition method, a vertical vapor deposition apparatus in which a substrate is vertically arranged in the vapor deposition apparatus is known (for example, see patent documents 1 and 2). The vertical vapor deposition device has an advantage that the occupied area of the vapor deposition device can be reduced as compared with the horizontal vapor deposition device because a large substrate is handled while standing up.

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open No. 2012 and 84544.

Patent document 2: japanese patent laid-open No. 2014-70239.

Disclosure of Invention

In a vertical vapor deposition device, unlike a horizontal vapor deposition device, a substrate and a vapor deposition mask are arranged vertically in a vertical direction (vertical direction, gravity direction). Therefore, the vertical type vapor deposition apparatus has a problem different from that of the horizontal type vapor deposition apparatus. For example, in the alignment of the substrate and the vapor deposition mask, the vapor deposition mask is attracted to the vicinity of the substrate by magnetic force, and in the case of the horizontal vapor deposition device, the direction of the magnetic force coincides with the direction of gravity, so that the influence of gravity in the alignment is small. On the other hand, in the case of a vertical vapor deposition device, since the direction of magnetic force and the direction of gravity are different, positional deviation due to the influence of gravity occurs. When the substrate is large-sized, the amount of positional deviation in the positional alignment becomes significant.

The inventors of the present invention have made extensive studies and found that a distance (gap) between a substrate and a vapor deposition mask before the substrate and the vapor deposition mask are aligned in a vertical vapor deposition device has a correlation with a positional deviation. The present inventors have also found that by controlling the gap between the substrate and the vapor deposition mask, defects caused by positional deviation in the vertical vapor deposition device can be reduced.

In the horizontal vapor deposition device, even if the gap between the substrate and the vapor deposition mask is manually adjusted, the positional deviation can be sufficiently adjusted. However, in the vertical vapor deposition device, when the gap between the substrate and the vapor deposition mask is manually adjusted, fine adjustment is required a plurality of times, which is time-consuming, and thus it is difficult to adjust the gap for each substrate.

In view of the above problems, it is an object of the present invention to provide a vapor deposition device and a method for manufacturing a display device, in which the adjustment time of the gap between the substrate and the vapor deposition mask is shortened. Another object of the present invention is to provide a vapor deposition device and a method for manufacturing a display device, in which defects in a vapor deposition process are reduced.

A method for manufacturing a display device according to one embodiment of the present invention is a method for depositing an organic material on a substrate using a deposition mask, wherein the deposition mask is disposed so as to face the substrate, and a first gap (l) between the substrate at a first position and the deposition mask is detected₁) Detecting a second gap (l) between the substrate and the vapor deposition mask at the second position₂) The first gap (l) is formed₁) And the second gap (l)₂) RegulatingTo satisfy equation 3.

A vapor deposition device according to an embodiment of the present invention includes: a mechanism for disposing the vapor deposition mask opposite to the substrate; detecting a first gap (l) between the substrate and the evaporation mask at a first position₁) The first detecting unit of (1); detecting a second gap (l) between the substrate and the vapor deposition mask at a second position₂) The second detection unit of (1); adjusting the first gap (l)₁) The first regulating portion of (1); and adjusting the second clearance (l)₂) The first and second regulating parts regulate the first gap (l)₁) And a second gap (l)₂) Adjusted to satisfy equation 9.

Here, L in the formulae 3 and 9₁₂Is the distance between the first position and the second position.

In addition, a method of manufacturing a display device according to an embodiment of the present invention is a method of depositing an organic material on a substrate using a vapor deposition mask, in which the vapor deposition mask is disposed so as to face the substrate, the substrate and the vapor deposition mask are disposed so that surfaces facing each other face in a direction intersecting a vertical direction, a first gap between the substrate and the vapor deposition mask at a first position is detected, a second gap between the substrate and the vapor deposition mask at a second position is detected, and the first position and the second position are adjusted so that a difference between the first gap and the second gap is reduced.

A vapor deposition device according to an embodiment of the present invention includes: a mechanism for disposing the vapor deposition mask so as to face the substrate, and disposing the substrate and the vapor deposition mask so that the faces thereof facing each other face in a direction intersecting the vertical direction; a first detecting section for detecting a first gap between the substrate and the vapor deposition mask at a first position; a second detecting section for detecting a second gap between the substrate and the vapor deposition mask at a second position; a first adjusting portion that adjusts the first gap; and a second adjusting portion that adjusts the second gap, the first adjusting portion and the second adjusting portion adjusting the first position and the second position at the same time so that a difference between the first gap and the second gap becomes small.

According to one embodiment of the present invention, the adjustment time of the gap between the substrate and the vapor deposition mask can be shortened.

Drawings

Fig. 1A is a front view of a vapor deposition mask used in a vapor deposition device according to a first embodiment.

Fig. 1B is a sectional view of a vapor deposition mask used in the vapor deposition device according to the first embodiment.

Fig. 1C is a partially enlarged view of a vapor deposition mask used in the vapor deposition device according to the first embodiment.

Fig. 2A is a schematic view showing a state before the position of the vapor deposition mask with respect to the substrate is fixed, which is performed in the vapor deposition device according to the first embodiment.

Fig. 2B is a schematic view showing a state in which the position of the vapor deposition mask with respect to the substrate is fixed, which is performed in the vapor deposition device according to the first embodiment.

Fig. 3 is a graph showing a correlation between the Δ gap and the yield in the vapor deposition step with respect to the number of vapor depositions in the first embodiment.

Fig. 4 is a schematic cross-sectional view of a vapor deposition device according to a first embodiment.

Fig. 5 is a schematic plan view of the vapor deposition device according to the first embodiment.

Fig. 6 is a flowchart of a vapor deposition step in the method for manufacturing a display device according to the second embodiment.

Fig. 7 is a schematic view of a display device of the second embodiment.

Fig. 8 is a circuit diagram of a pixel of the display device of the second embodiment.

Fig. 9 is a cross-sectional view of a pixel of a display device of the second embodiment.

Description of the reference numerals

100: vapor deposition device, 110: evaporation source, 120: support portion, 130: substrate jig, 130-1: first substrate jig, 130-2: second substrate jig, 140: optical sensor, 140-1: first optical sensor, 140-2: second optical sensor, 140-3: third optical sensor, 140-4: fourth optical sensor, 140-5: fifth optical sensor, 140-6: sixth optical sensor, 150: vapor deposition mask jig, 150-1: first vapor deposition mask jig, 150-2: second vapor deposition mask jig, 150-3: third vapor deposition mask jig, 150-4: fourth vapor deposition mask jig, 150-5: fifth vapor deposition mask jig, 150-6: sixth vapor deposition mask holder, 160: adjustment portion, 160-1: first regulating portion, 160-2: second regulating portion, 160-3: third regulating portion, 160-4: fourth regulation portion, 160-5: fifth regulation portion, 160-6: sixth adjustment portion, 170: magnet portion, 180: camera for alignment, 190: substrate-side adjustment portion, 190-1: first substrate-side adjustment portion, 190-2: second substrate-side adjustment portion, 200: vapor deposition mask, 210: mask frame, 220: metal mask, 230: opening, 300: substrate, 700: display device, 701: substrate, 701 a: first resin layer, 701 b: inorganic layer, 701 c: second resin layer, 702: a polarizer, 703: first region, 704: scanning line driver circuit, 706: driver IC, 707: terminal, 708: flexible printed circuit board, 709: pixel, 710: second region, 711: scan line, 712: signal line, 714: drive power supply line, 716: reference power supply line, 730: bending area, 740: light-emitting element, 802: undercoat layer, 802 a: silicon oxide layer, 802 b: silicon nitride layer, 802 c: silicon oxide layer, 803: inorganic layer, 804: semiconductor layer, 804 a: channel region, 804 b: low-concentration impurity region, 804 d: source region, 804 e: drain region, 805: gate insulating layer, 806 a: gate electrode, 806 b: conductive layer, 807: interlayer insulating layer, 808 a: source electrode, 808 b: drain electrode, 809: insulating layer, 810: transistor, 811: planarizing film, 812 a: transparent conductive film, 812 b: transparent conductive film, 813: insulating layer, 820: a transistor, 822: pixel electrode, 823: organic layer, 824: counter electrode, 825: insulating layer, 830: capacitive element, 831: first inorganic insulating film, 832: first organic insulating film, 833: second inorganic insulating film, 834: second organic insulating film, 840: organic EL element, 850: and (5) sealing the film.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be carried out in various ways without departing from the scope of the gist thereof, and is not limited to the description of the embodiments illustrated below. The drawings schematically show the width, thickness, shape, and the like of each part as compared with the actual form in order to make the description clearer, but the drawings are merely examples and do not limit the explanation of the present invention. In the present specification and the drawings, elements having the same functions as those described with reference to the already-described figures are denoted by the same reference numerals, and redundant description may be omitted.

In the present specification and claims, "upper" and "lower" refer to relative positional relationships based on a surface (hereinafter, simply referred to as "surface") of the substrate on which the light-emitting element is formed. For example, in this specification, a direction from the surface of the substrate to the light-emitting element is referred to as "up", and a direction opposite thereto is referred to as "down". In the present specification and claims, the term "upper" when used to describe a state in which another structure is disposed on a certain structure includes both a case in which another structure is disposed immediately above the certain structure so as to be in contact with the certain structure and a case in which another structure is disposed above the certain structure with another structure interposed therebetween, unless otherwise specified.

< first embodiment >

A vapor deposition device 100 according to an embodiment of the present invention will be described with reference to fig. 1A to 5.

First, a vapor deposition mask 200 used in the vapor deposition device 100 of the present embodiment will be described.

[ vapor deposition mask ]

Fig. 1A is a front view of the vapor deposition mask 200. Fig. 1B is a cross-sectional view of the vapor deposition mask 200 cut along the line a-a' shown in fig. 1A. Fig. 1C is a partially enlarged view of a region B shown in fig. 1A.

As shown in fig. 1A and 1B, the evaporation mask 200 includes a mask frame 210 and a metal mask 220. The mask frame 210 has a rectangular opening at the center thereof, and a metal mask 220 is provided so as to cover the opening. That is, the outer peripheral portion of the metal mask 220 is fixed to the mask frame 210.

The metal mask 220 may be fixed to the mask frame 210 by welding or may be fixed by an adhesive. When the metal mask 220 is fixed to the mask frame 210 by an adhesive, an epoxy adhesive having heat resistance is preferably used.

As shown in fig. 1C, the metal mask 220 is provided with a plurality of openings 230. The evaporation material passing through the openings 230 is deposited on the substrate 300 (see fig. 2A), and a pattern of the openings 230 is formed on the substrate 300. The pattern of the opening 230 may correspond to the arrangement pattern of the pixels of the substrate 300, or may be a part of the arrangement pattern of the pixels of the substrate 300. The pattern of the openings 230 may be, for example, a matrix pattern or a staggered pattern.

The mask frame 210 is preferably made of a rigid material so as not to generate strain in the vapor deposition mask 200 in order to support the metal mask 220. The rigid material is, for example, stainless steel (SUS), iron-nickel alloy, or aluminum alloy.

The thickness of the mask frame 210 is not particularly limited, and is, for example, 5mm to 100 mm. The mask frame 210 may be formed of a plurality of structures. When the thickness of the mask frame 210 is small, the rigidity of the mask frame 210 is reduced, and thus strain is easily generated. On the other hand, when the thickness of the mask frame 210 is large, the weight of the vapor deposition mask 200 increases, and thus it becomes difficult to use the vapor deposition mask 200 in the vapor deposition device 100. Therefore, the thickness of the mask frame 210 is preferably in the above range.

The metal mask 220 is preferably made of a material having good workability so as to provide a plurality of openings 230. As a material of the metal mask 220, for example, stainless steel, nickel materials, iron-nickel alloys, aluminum alloys, or the like can be used. In addition, when the opening 230 is required to be as fine as the pixel pattern of the light-emitting layer of the organic EL element, the metal mask 220 is fixed in position by being attracted to the vicinity of the substrate 300 by magnetic force. Therefore, the material of the metal mask 220 preferably includes a magnetic material. The magnetic material is, for example, pure iron, carbon steel, W steel, Cr steel, Co steel, KS steel, MK steel, NKS steel, CuNiCo steel, Al-Fe alloy, or the like. In addition, a magnetic material may be coated on the surface of the metal mask 220.

The thickness of the metal mask 220 is not particularly limited, but is, for example, 100 μm or less, preferably 2 μm or more and 10 μm or less. When the thickness of the metal mask 220 is small, the rigidity is weakened, and thus the metal mask 220 is easily broken. Further, when the thickness of the metal mask 220 is small, deformation of the metal mask 220 due to radiant heat at the time of vapor deposition is also likely to occur. On the other hand, when the thickness of the metal mask 220 is large, the height of the side wall of the opening 230 becomes large, and therefore, a phenomenon (shadow effect) in which the vapor deposition material hardly enters the opening 230 occurs. Therefore, the thickness of the metal mask 220 is preferably in the above range.

The vapor deposition device 100 is a so-called vertical vapor deposition device, and the vapor deposition mask 200 is vertically arranged in a vertical direction (vertical direction, gravity direction). When the vapor deposition mask 200 has a rectangular shape having a pair of long sides and a pair of short sides, the vapor deposition mask 200 may have the long sides standing up or the short sides standing up. The vertical direction (vertical direction, gravity direction) is not limited to a direction perpendicular to the ground surface of the vapor deposition device 100, and includes a substantially perpendicular direction. Further, the vapor deposition mask 200 of the vapor deposition device 100 may be arranged obliquely with respect to the vertical direction. The inclination angle with respect to the vertical direction when the vapor deposition mask 200 is inclined is, for example, 0 ° to 30 °.

Next, the fixing of the position of the vapor deposition mask 200 to the substrate 300 before vapor deposition in the vapor deposition device 100 will be described.

[ fixing of position of vapor deposition mask with respect to substrate ]

Fig. 2A is a schematic view showing a state before the position of the vapor deposition mask 200 is fixed with respect to the substrate 300. Fig. 2B is a schematic view showing a state in which the position of the vapor deposition mask 200 with respect to the substrate 300 is fixed.

Fig. 2A and 2B show a mask frame 210 and a metal mask 220 of a vapor deposition mask 200, a substrate 300, a support 120 that is a part of the vapor deposition device 100, and a magnet 170. The substrate 300 is supported by the support portion 120 and is vertically disposed. The vapor deposition mask 200 is also vertically disposed in the same manner as the substrate 300. The vapor deposition mask 200 and the substrate 300 are arranged apart from each other with a constant interval therebetween, i.e., a gap.

The magnet portion 170 is provided to face the vapor deposition mask 200 and the substrate 300 with the support portion 120 interposed therebetween. In other words, the magnet portion 170 is located on the side of the support portion 120 opposite to the side on which the vapor deposition mask 200 and the substrate 300 are arranged.

As shown in fig. 2A, when the magnet portion 170 is separated from the support portion 120, the gap (gap l) between the vapor deposition mask 200 and the substrate 300 is maintained at a constant value. On the other hand, as shown in fig. 2B, when the magnet portion 170 approaches the support portion 120, the metal mask 220 is attracted by the magnetic force of the magnet portion 170, the gap (gap l) between the vapor deposition mask 200 and the substrate 300 is narrowed, and finally the metal mask 220 of the vapor deposition mask 200 contacts a part of the substrate 300, and the position of the vapor deposition mask 200 with respect to the substrate 300 is fixed. Then, a vapor deposition material is deposited to form a film having a pattern corresponding to the pattern of the vapor deposition mask 200 on the substrate 300. In the vapor deposition step, in addition to fixing the position of the vapor deposition mask 200 with respect to the substrate 300 and vapor deposition, alignment (registration) of the pattern of the vapor deposition mask 200 is also included.

Fig. 3 is a graph showing a correlation between the Δ gap and the yield in the vapor deposition step with respect to the number of vapor depositions. Here, the Δ gap is the maximum gap l among the distances (gaps l) between the substrate 300 and the vapor deposition mask 200 at each of the plurality of positions in the substrate 300_maxWith a minimum clearance of l_minThe difference between them. The yield of the vapor deposition step is a yield of a product (for example, a display device) in the vapor deposition step except for a defective product caused by the vapor deposition step. The defects caused by the vapor deposition process include so-called misalignment in which no pattern is formed at a predetermined position on the substrate 300 or a pattern is formed at a misaligned position.

As shown in fig. 3, the Δ gap increases as the number of times of vapor deposition increases. This is because a positional shift caused by a magnetic force occurs locally. That is, in the vertical vapor deposition device, since the direction of gravity and the direction of magnetic force are different, the distance between the substrate 300 and the vapor deposition mask 200 in the plane tends to vary, and the surface of the vapor deposition mask 200 facing the surface of the substrate 300 tends to be inclined. Further, the Δ gap tends to increase with time. Therefore, as the number of times of vapor deposition increases, in-plane variations in the vapor deposition step occur, and the yield of the vapor deposition step decreases. As described above, the inventors of the present invention have found that there is a correlation in which the yield of the deposition process decreases when the Δ gap increases. The yield of the vapor deposition process is improved by adjusting the gap between the substrate 300 and the vapor deposition mask 200 for each vapor deposition, but in the conventional vertical vapor deposition device, the adjustment of the gap between the substrate 300 and the vapor deposition mask 200 takes too much time, and therefore, the adjustment of the gap for each vapor deposition is not practical, and is performed only for each fixed number of vapor deposition times or for each replacement of the vapor deposition mask 200.

On the other hand, in the vapor deposition device 100 of the present embodiment, since the time for adjusting the gap between the substrate 300 and the vapor deposition mask 200 is short, the gap between the substrate 300 and the vapor deposition mask 200 can be adjusted for each vapor deposition. Of course, the vapor deposition device 100 according to the present embodiment can adjust the gap between the substrate 300 and the vapor deposition mask 200 for each fixed number of vapor depositions or for each replacement of the vapor deposition mask 200, depending on the allowable amount of positional deviation, and in this case, the time for adjusting the gap between the substrate 300 and the vapor deposition mask 200 can also be shortened.

Next, a vapor deposition device 100 according to the present embodiment will be described with reference to fig. 4 and 5.

Fig. 4 is a schematic cross-sectional view of a vapor deposition device 100 according to this embodiment. As shown in fig. 4, the vapor deposition device 100 includes a vapor deposition source 110, a support 120, a first substrate holder 130-1, a second substrate holder 130-2, a first optical sensor 140-1, a second optical sensor 140-2, a first vapor deposition mask holder 150-1, a second vapor deposition mask holder 150-2, a first adjustment section 160-1, a second adjustment section 160-2, a magnet section 170, a position alignment camera 180, a first substrate adjustment section 190-1, and a second substrate adjustment section 190-2.

In the present specification, the first substrate holder 130-1 and the second substrate holder 130-2 will be described as the substrate holder 130 without being particularly distinguished. Similarly, the first optical sensor 140-1 and the second optical sensor 140-2, the first vapor deposition mask jig 150-1 and the second vapor deposition mask jig 150-2, the first adjusting section 160-1 and the second adjusting section 160-2, and the first substrate side adjusting section 190-1 and the second substrate side adjusting section 190-2 will be described as the optical sensor 140, the vapor deposition mask jig 150, the adjusting section 160, and the substrate side adjusting section 190, respectively, without distinguishing them from each other.

The vapor deposition source 110 includes a crucible having an opening on the substrate side and a heater for heating the crucible. When a vapor deposition material is put into a crucible and the crucible is heated by a heater, the evaporated vapor deposition material flies out from an opening of the crucible. The sputtered vapor deposition material is deposited on the substrate 300 through the openings 230 of the vapor deposition mask 200. The vapor deposition source 110 may be provided in plural, or may be movable in the vertical direction.

The support portion 120 can support the substrate 300, and preferably has a flat surface on the substrate 300 side so that the substrate 300 is not bent.

The substrate holder 130 can hold the substrate 300 and fix the substrate 300 to the support portion 120. As shown in fig. 4, when the substrate 300 is vertically disposed, the first substrate holder 130-1 fixes the upper portion of the substrate 300, and the second substrate holder 130-2 fixes the lower portion of the substrate 300. A plurality of substrate jigs 130 may be provided above and below the substrate 300. In particular, when the substrate 300 has a rectangular shape, the substrate holder 130 is preferably provided at four corners of the substrate 300 so as to stably hold the substrate 300.

The optical sensor 140 can detect the gap l between the substrate 300 and the vapor deposition mask 200. Further, as for the optical sensor 140, it is preferable to provide a plurality of optical sensors 140 so as to be able to detect the gap l at a plurality of positions. For example, as shown in fig. 4, when the substrate 300 is vertically disposed, the first optical sensor 140-1 preferably detects the first gap l at the first position on the upper portion of the substrate 300₁The second optical sensor 140-2 detects a second gap l of a second position of the lower portion of the substrate 300₂。

As the optical sensor 140, for example, a confocal sensor can be used. The confocal sensor disperses white light (such as an LED) by the microlens and focuses the white light on the surface of the substrate 300 and the surface of the vapor deposition mask 200. Monochromatic light having a focal point on the surface of the substrate 300 and the surface of the vapor deposition mask 200 is detected by a spectrometer, and the distance (gap l) between the surface of the substrate 300 and the surface of the vapor deposition mask 200 is calculated. In addition, the optical sensor 140 is not limited to a confocal sensor. The optical sensor 140 may be a device capable of measuring the distance (gap l) between the surface of the substrate 300 and the surface of the vapor deposition mask 200, and may be configured by a plurality of length measuring sensors. For example, the optical sensor 140 includes a first length measurement sensor that measures the distance between the surface of the substrate 300 and a second length measurement sensor that measures the distance between the surface of the vapor deposition mask 200, and the distance (gap l) between the surface of the substrate 300 and the surface of the vapor deposition mask 200 can also be calculated from the first distance measured by the first length measurement sensor and the second distance measured by the second length measurement sensor.

The vapor deposition mask holder 150 can hold and fix the vapor deposition mask 200. The vapor deposition mask holder 150 is connected to the adjustment section 160, and the position of the vapor deposition mask 200 can be adjusted by the adjustment section 160. As shown in fig. 4, when the vapor deposition mask 200 is vertically disposed, the first vapor deposition mask holder 150-1 fixes the upper portion of the vapor deposition mask 200, and the second vapor deposition mask holder 150-2 fixes the lower portion of the vapor deposition mask 200. A plurality of vapor deposition mask jigs 150 may be provided above and below the vapor deposition mask 200. In particular, when the vapor deposition mask 200 is rectangular, the vapor deposition mask holder 150 is preferably provided at four corners of the vapor deposition mask 200 so as to stably hold the vapor deposition mask 200.

The adjusting section 160 can automatically move the vapor deposition mask jig 150 while detecting the gap l between the substrate 300 and the vapor deposition mask 200 by the optical sensor 140, and adjust the position of the vapor deposition mask 200 with respect to the substrate 300 so that the gap l becomes equal to or smaller than a predetermined Δ gap. That is, the adjustment section 160 can receive a signal from the optical sensor 140 and automatically adjust the vapor deposition mask holder 150 based on the signal. Therefore, the adjustment unit 160 may be electrically connected to the optical sensor 140 so as to be able to communicate therewith. In addition, a plurality of adjusting units 160 are preferably provided, as in the optical sensor 140. For example, as shown in fig. 4, when the vapor deposition mask 200 is vertically disposed, the first adjustment unit 160-1 can adjust the first vapor deposition mask holder 150-1 based on the gap l detected by the first optical sensor 140-1, and the second adjustment unit 160-2 can adjust the second vapor deposition mask holder 150-2 based on the gap l detected by the second optical sensor 140-2.

The adjusting section 160 can move the vapor deposition mask jig 150 in a direction perpendicular to the substrate 300 (the left-right direction in the drawing) to adjust the gap l between the substrate 300 and the vapor deposition mask 200. Each of the first and second adjusting sections 160-1 and 160-2 includes a motor coupled to the vapor deposition mask holder 150 so as to be driven independently, and a control section for controlling the driving of the motor. The control unit controls the driving of the motor based on the gap l detected by the optical sensor 140. That is, the control unit of the adjustment unit 160 adjusts the motor connected to the vapor deposition mask holder 150 so that the gap l detected by the optical sensor 140 falls within a predetermined range. The adjustment unit 160 is not limited to a motor, and may be an actuator capable of moving the vapor deposition mask holder 150. Further, the motor may be capable of adjusting not only the direction perpendicular to the substrate 300 but also the direction parallel to the substrate 300.

In fig. 4, 2 adjustment portions 160 are shown, but when the vapor deposition mask jigs 150 are provided at the four corners of the vapor deposition mask 200, the adjustment portions 160 are provided for each vapor deposition mask jig 150. Namely, 4 adjustment portions are provided. The 4 adjustment units 160 may be driven independently, but it is preferable that the control units of the 4 adjustment units 160 are synchronized. This enables simultaneous driving of 4 sites, and adjustment of the Δ gap in a short time.

In the case where a plurality of adjustment portions 160 are provided, the control portions of the plurality of adjustment portions 160 may be connected to each other. For example, by connecting the control unit of the first adjustment unit 160-1 and the control unit of the second adjustment unit 160-2 in advance, the first clearance l by the first adjustment unit 160-1 can be synchronized₁And a second adjusting part 160-2 basedTwo gaps l₂Such a plurality of clearances l. Although not shown, an overall control unit to which the control units of the plurality of adjustment units 160 are connected may be provided, and the plurality of adjustment units 160 may be synchronized by the control of the overall control unit to adjust the gap l.

The magnet portion 170 is close to the support portion 120, and the position of the vapor deposition mask 200 with respect to the substrate 300 can be fixed by bringing the vapor deposition mask 200 into contact with a part of the substrate 300 by the magnetic force of the magnet portion 170. Therefore, the magnet portion 170 includes a magnet for attracting the vapor deposition mask 200 and a drive mechanism for driving the magnet. As the magnet included in the magnet portion 170, for example, a neodymium magnet, a ferrite magnet, or the like can be used.

The alignment camera 180 can take images of an alignment mark provided at a predetermined position on the substrate 300 and an alignment mark provided at a predetermined position on the vapor deposition mask 200. The alignment camera 180 may be connected to the adjustment unit 160. The adjusting section 160 adjusts the positions of the substrate 300 and the vapor deposition mask 200 based on the image captured by the alignment camera 180. The adjusting section 160 can adjust the positions of the substrate 300 and the vapor deposition mask 200, for example, so that 2 alignment marks overlap or so that 2 alignment marks are aligned in a line. In addition, a plurality of alignment cameras 180 may be provided.

The substrate-side adjusting section 190 can move the support section 120 in a direction perpendicular to the substrate 300 (the left-right direction in the drawing) to bring the substrate 300 close to the vapor deposition mask 200. In other words, the substrate-side adjusting section 190 can perform rough adjustment of the gap l between the substrate 300 and the vapor deposition mask 200. The substrate-side adjustment unit 190 may have the same configuration as the adjustment unit 160. Further, the substrate-side adjusting portion 190 and the support portion 120 may be connected, and the support portion 120 may be moved by sliding the substrate-side adjusting portion 190. Further, the support portion 120 may be moved by pushing it out by projecting a pin from the substrate-side adjustment portion 190.

By providing the substrate-side adjusting unit 190, the gap l can be roughly adjusted by the substrate-side adjusting unit 190, and can be finely adjusted by the adjusting unit 160. In addition, the functions of the fine adjustment of the adjustment section 160 and the coarse adjustment of the substrate-side adjustment section 190 may be reversed. That is, the adjustment of the Δ gap may be performed while performing the coarse adjustment of the gap l by the adjustment unit 160 that adjusts the position on the mask side and performing the fine adjustment of the gap l by the substrate-side adjustment unit 190 that adjusts the position on the substrate side.

A vapor deposition device 100 according to an embodiment of the present invention will be further described with reference to fig. 5.

Fig. 5 is a schematic plan view showing a vapor deposition device 100 according to the present embodiment. Specifically, fig. 5 is a schematic plan view of the vapor deposition device 100 showing a configuration related to adjustment of the gap l between the substrate 300 and the vapor deposition mask 200. In fig. 5, only the substrate 300 is shown, and the vapor deposition mask 200 is omitted.

As shown in fig. 5, a vapor deposition device 100 includes: first gap l for detecting first position of substrate 300₁The first optical sensor 140-1; can adjust the first clearance l₁The first vapor deposition mask jig 150-1; a first adjusting section 160-1 capable of adjusting the first vapor deposition mask jig 150-1; detecting the gap l of the second position of the substrate 300₂The second optical sensor 140-2; the second gap l can be adjusted₂The second vapor deposition mask jig 150-2; a second adjusting section 160-2 capable of adjusting the second vapor deposition mask jig 150-2; detecting a gap l of the third position of the substrate 300₃The third optical sensor 140-3; can adjust the clearance l₃The third vapor deposition mask jig 150-3; a third adjusting section 160-3 capable of adjusting the third vapor deposition mask jig 150-3; fourth gap l for detecting fourth position of substrate 300₄The fourth optical sensor 140-4; the fourth gap l can be adjusted₄The fourth vapor deposition mask jig 150-4; a fourth adjusting section 160-4 capable of adjusting the fourth vapor deposition mask jig 150-4; fifth gap l for detecting fifth position of substrate 300₅The fifth optical sensor 140-5; can adjust the fifth clearance l₅The fifth vapor deposition mask jig 150-5; a fifth adjusting section 160-5 capable of adjusting the fifth vapor deposition mask jig 150-5; sixth gap l for detecting sixth position of substrate 300₆The sixth optical sensor 140-6; the sixth gap l can be adjusted₆The sixth vapor deposition mask jig 150-6; adjustable sixth vapor deposition mask jig150-6, and a sixth regulating portion 160-6.

Here, the first position, the second position, the third position, and the fourth position are positions near four corners of the substrate 300. The first position and the fourth position are located at an upper portion of the substrate 300 in the present drawing, and the second position and the third position are located at a lower portion of the substrate 300. In addition, the first position and the third position are located on opposite corners of the substrate 300, and the second position and the fourth position are also located on opposite corners of the substrate 300. The fifth position is intermediate the first position and the second position, and the sixth position is intermediate the third position and the fourth position.

The first, second, third and fourth regulating parts 160-1, 160-2, 160-3 and 160-4 are respectively regulated such that the first gap l is₁A second gap l₂A third gap l₃And a fourth gap l₄The thickness is 1.0mm or less. It is preferably adjusted to 0.3 mm.

In addition, in order to suppress in-plane variations in the substrate 300 and improve the yield of the deposition process, the first gap l is set to be larger than the second gap l₁A second gap l₂A third gap l₃And a fourth gap l₄In selecting the maximum gap l_maxAnd a minimum clearance l_minThe Δ gap, which is the difference between them, is adjusted to be within a predetermined range. For example, the Δ gap is adjusted to satisfy formula 1.

l_max-l_min< 0.1mm … (formula 1)

Preferably, the Δ gap is adjusted to satisfy formula 2.

l_max-l_min< 0.05mm … (formula 3)

As described above, the adjustment portion 160 can adjust not only the gap l at each position but also the Δ gap associated with each gap l. That is, by performing 2-stage adjustment of the gap l, in-plane variation in the substrate 300 can be suppressed, and the yield of the deposition process can be improved.

Further, the adjustment of the Δ gap can also include the distance between the detected positions of the gap l as a parameter.

For example, a gap l in the first position₁And a second position₂One of them is the mostLarge gap l_maxThe other is the minimum clearance l_minThe first and second regulating parts 160-1 and 160-2 regulate so that equation 3 is satisfied. Here, L₁₂Is the distance between the first position and the second position.

In order to further improve the yield in the vapor deposition step, the first and second adjustment sections 160-1 and 160-2 are preferably adjusted so as to satisfy equation 4.

In addition, for example, the gap l in the first position₁And a third position₃One of the maximum clearances l_maxThe other is the minimum clearance l_minThe first and third regulating parts 160-1 and 160-3 regulate so that equation 5 is satisfied. Here, L₁₃Is the distance between the first position and the third position.

In order to further suppress the in-plane variation in the substrate 300, the first adjustment portion 160-1 and the third adjustment portion 160-3 are preferably adjusted so as to satisfy equation 6.

Similarly, the fourth and second regulating parts 160-4 and 160-2 and the fourth and third regulating parts 160-4 and 160-3 can be regulated, but the explanation is omitted here.

The adjustment of the Δ gap is performed not only at 1 point but also at a plurality of points. That is, the substrate 300 may have n detection positions that are the first position, the second position, … …, and the nth position (n is a natural number of 3 or more).

In addition, when the size of the substrate 300 is not less than a certain value (for example, not less than 1500mm × 1850 mm), the gap l between the four corners of the substrate 300 and the middle position of the substrate affects the yield of the deposition process, and thus the substrate may have 6 detection positions. In this case, the fifth and sixth adjusting parts 160-5 and 160-6 adjust the fifth gap l, respectively₅And a sixth gap l₆. Selecting the first to sixth positions having the maximum clearance l_maxAnd a minimum clearance l_minThe two positions of (2) may be selected so as to satisfy the above formulas 1 to 6.

As described above, the vapor deposition device 100 according to the present embodiment can automatically adjust the gap l between the substrate 300 and the vapor deposition mask 200. In the case of automatically adjusting the clearance l, the time required for adjustment of the clearance l is significantly shortened as compared with the case of manually adjusting the clearance l. Therefore, the gap l can be adjusted for each deposition, and the yield of the deposition process can be improved. Further, by adjusting the Δ gap associated with the gap l at a plurality of positions in the substrate 300 so as to satisfy a predetermined expression, the yield of the deposition process can be further improved.

< second embodiment >

A method for manufacturing a display device using a vapor deposition device according to an embodiment of the present invention will be described with reference to fig. 6. The following description will sometimes be made with reference to the structure of the vapor deposition device 100 shown in fig. 4 and 5.

Fig. 6 is a flowchart of a vapor deposition step in the method for manufacturing a display device according to the present embodiment. The vapor deposition step shown in fig. 6 is 1 step in the manufacturing process of the display device, and is a step of forming an organic layer of the organic EL element by a vapor deposition method.

As shown in fig. 6, the evaporation step includes: a step of carrying in the substrate 300 (substrate carrying-in step S110); a step of roughly adjusting the gap between the substrate 300 and the vapor deposition mask (a step of roughly adjusting the gap: S120); a step of fine-adjusting the gap between the substrate 300 and the vapor deposition mask 200 (gap fine-adjusting step S125); a step of aligning the position of the substrate 300 with the vapor deposition mask 200 (position alignment step S130); a step of fixing the position of the vapor deposition mask 200 with respect to the substrate 300 (position fixing step S140); a step of evaporating an evaporation material (evaporation step S150); a step of releasing the fixation of the position of the vapor deposition mask 200 (position fixation releasing step S160); and a step of carrying out the substrate 300 (substrate carrying-out step: S170).

In the substrate carrying-in step (S110), the substrate 300 is carried into the vapor deposition device 100, and the substrate 300 is held and fixed by the substrate holder 130. The vapor deposition mask 200 may be provided in advance in the vapor deposition device 100 before the substrate 300 is carried in, or may be provided after the substrate 300 is carried in and carried into the vapor deposition device 100.

In the gap rough adjustment step (S120), the substrate 300 and the vapor deposition mask 200 are brought close to each other using the optical sensor 140, the support 120, and the substrate side adjustment section 190. Specifically, the gap is detected by the optical sensor 140, and the substrate-side adjustment unit 190 moves the support unit 120 to adjust the gap to be equal to or smaller than a predetermined gap. The adjustment here is coarse adjustment, and the predetermined gap is, for example, 1cm or less.

In the gap fine adjustment step (S125), the gap between the substrate 300 and the vapor deposition mask 200 is fine-adjusted using the optical sensor 140, the vapor deposition mask jig 150, and the adjustment section 160. Specifically, the optical sensor 140 detects the gap, and the adjustment section 160 moves the vapor deposition mask holder 150 to adjust the gap to be equal to or smaller than a predetermined gap. The adjustment of the vapor deposition mask jig 150 is automatically performed by a motor included in the adjustment section 160. The gap fine adjustment step (S125) may be performed for each substrate transfer, or may be performed after the substrate transfer is performed a plurality of times.

The adjustment of the gap l between the substrate 300 and the vapor deposition mask 200 is performed at a plurality of positions in the substrate 300. In particular, it is preferable that the first gap l is formed at each of the first position, the second position, the third position and the fourth position near the four corners of the substrate 300₁A second gap l₂A third gap l₃And a fourth gap l₄And (4) adjusting. Here, the first position and the fourth positionIn a state where the substrate 300 is disposed, the second position and the third position are positions above the substrate 300 and below the substrate 300. Further, the first position and the third position are located at positions on opposite corners of the substrate 300, and the second position and the fourth position are also positions on opposite corners of the substrate 300.

The fine adjustment of the gap l is performed in 2 stages. First, a first gap l₁A second gap l₂A third gap l₃And a fourth gap l₄Is adjusted to 1.0mm or less. Preferably 1 gap l₁A second gap l₂A third gap l₃And a fourth gap l₄Is adjusted to 0.3 mm. As the clearance i becomes larger, the effect of fine adjustment of the clearance i becomes smaller. Therefore, the gap is preferably in the above range.

Subsequently, the Δ gap is adjusted. I.e. from the first gap l₁A second gap l₂A third gap l₃And a fourth gap l₄In selecting the maximum gap l_maxAnd a minimum clearance l_minThe Δ gap, which is the difference between them, is adjusted to be within a predetermined range. Specifically, the adjustment portions 160 corresponding to the selected gaps l are independently and simultaneously moved to adjust the Δ gap to be small. For example, the Δ gap is adjusted to satisfy equation 7.

l_max-l_min< 0.1mm … (formula 7)

Preferably, the Δ gap is adjusted to satisfy equation 8.

l_max-l_min< 0.05mm … (formula 8)

As described above, the gap l at each position is adjusted not only independently but also by adjusting the Δ gap associated with each gap l, so that the in-plane variation in the substrate 300 can be suppressed and the yield of the deposition process can be improved.

For example, a gap l in the first position₁And a second position₂One of the gaps is the maximum gap, and the other is the minimum gap, the gap l of the first position₁And a secondGap of position l₂Is adjusted to satisfy equation 9. Here, L₁₂Is the distance between the first position and the second position.

Further, the gap l of the first position₁And a second position₂Preferably adjusted to satisfy equation 10.

Furthermore, the gap i in the first position₁And a third position₂One of the gaps is the maximum gap, and the other is the minimum gap, the gap l of the first position₁And a third position₃Is adjusted to satisfy equation 11. Here, L₁₃Is the distance between the first position and the third position.

Further, the gap l of the first position₁And a third position₂Preferably adjusted to satisfy equation 12.

Furthermore, the gap l of the first position can also be taken into account₁And a fourth position₂One of the maximum clearances l_maxThe other is the minimum clearance l_minIn the case of (2), the clearance l of the second position₂And a third position₃One of the maximum clearances l_maxThe other is the minimum clearance l_minIn the case of (1), or in the third position₃And a fourth position₄One of the maximum clearances l_maxThe other is the minimum clearance l_minHowever, since the case is the same as the above-mentioned formula, the description thereof is omitted here.

The adjustment of the Δ gap is performed not only at 1 point but also at multiple points. That is, the substrate may have n detection positions that are the first position, the second position, … …, and the nth position (n is a natural number of 3 or more). In this case, respective Δ gaps from the first to nth positions are detected. Further, adjustment is made by the adjusting portion 160 so that the maximum clearance l among them_maxWith a minimum clearance of l_minThe difference becomes small. This can suppress in-plane variations in the substrate 300 during vapor deposition.

By adjusting not only the gaps l at the plurality of positions in the substrate 300 independently but also the Δ gaps associated with the gaps l at the plurality of positions so as to satisfy a predetermined expression, in-plane variations in the substrate 300 can be suppressed, and therefore the yield of the deposition process can be further improved.

In the alignment step (S130), the substrate 300 and the vapor deposition mask 200 are aligned so that the pattern of the vapor deposition mask 200 corresponds to the pattern of the substrate 300. Specifically, the alignment marks of the substrate 300 and the vapor deposition mask 200 are photographed by using the alignment camera 180, and the positions of the substrate 300 and the vapor deposition mask 200 are adjusted by the adjusting section 160 based on the photographed alignment marks. The position alignment step (S130) may be performed after the gap fine adjustment step (S125), or may be performed before the gap fine adjustment step (S125).

In the step of fixing the position of the vapor deposition mask 200 (S140), the magnet portion 170 is brought close to the support portion 120. When the magnet portion 170 comes close to the support portion 120, the vapor deposition mask 200 comes into contact with a part of the substrate 300 by a magnetic force, and the position of the vapor deposition mask 200 with respect to the substrate 300 is fixed.

In the vapor deposition step (S150), a vapor deposition material is deposited by using the vapor deposition source 110. An organic layer having a pattern corresponding to the pattern of the vapor deposition mask 200 is formed by depositing a vapor deposition material provided in the openings 230 of the vapor deposition mask 200 on the substrate 300.

In the position fixing releasing step (S160) of the vapor deposition mask 200, the magnet portion 170 is separated from the support portion 120. When the magnet portion 170 is separated from the support portion 120, the vapor deposition mask 200 is also separated from the substrate 300.

In the step of carrying out the substrate 300 (S170), the substrate 300 is carried out of the vapor deposition device 100 by releasing the fixation of the substrate 300 by the substrate jig 130.

As described above, the method for manufacturing a display device according to the present embodiment includes the step of fine-adjusting the gap between the substrate 300 and the vapor deposition mask 200 in the vapor deposition step (S125). That is, the gap l can be adjusted for each deposition, and the yield of the deposition process can be improved. Further, the number of vapor deposition times, which is an allowable yield range, may be derived from the graph of fig. 3, and the gap l may be adjusted for each number of vapor deposition times. Further, by adjusting not only the gaps l at the plurality of positions in the substrate 300 independently but also the Δ gaps associated with the gaps l at the plurality of positions so as to satisfy a predetermined expression (in other words, by performing 2-stage fine adjustment), the yield in the vapor deposition step can be further improved.

< third embodiment >

An example of the structure of the display device 700 according to one embodiment of the present invention will be described with reference to fig. 7 to 9. The display device 700 has flexibility and is manufactured using the vapor deposition device 100.

Fig. 7 is a top view of a display device 700 according to an embodiment of the present invention. The display device 700 is provided with a first region 703 and a second region 710 on a substrate 701. The second region 710 is located outside the first region 703.

The first region 703 is a so-called display region. In the first region 703, a plurality of pixels 709 are arranged in a matrix. In addition, the arrangement of the pixels 709 is not limited to a matrix. The arrangement of the pixels 709 may be staggered, for example.

The second region 710 is a so-called peripheral region. The second region 710 includes: 2 scanning line driver circuits 704 provided along the longitudinal direction of the first region 703; and a plurality of terminals 707 provided at the end of the substrate 701 along the short side direction of the first region 703. The 2 scanning line driver circuits 704 are provided so as to sandwich the first region 703. Further, a plurality of terminals 707 are connected to the flexible printed circuit board 708. The driver IC706 is provided on a flexible printed circuit board 708.

The video signal and various control signals are supplied from a controller (not shown) outside the display device 700 via the flexible printed circuit board 708. The video signals are processed by the driver IC706 and input to a plurality of pixels 709. Various circuit signals are input to the scan line driver circuit 704 via the driver IC 706.

Power for driving the scan line driver circuit 704, the driver IC706, and the plurality of pixels 709 is supplied to the display device 700 in addition to the video signal and various circuit signals. Each of the plurality of pixels 709 includes an organic EL element 840 described later. A part of the power supplied to the display device 700 is supplied to the organic EL elements 840 included in the pixels 709, and the organic EL elements 840 emit light.

The display device 700 may also be provided with a polarizer 702 on the first region 703.

[ Pixel Circuit ]

Fig. 8 shows a pixel circuit included in each of a plurality of pixels 709 arranged in a display device 700 according to an embodiment of the present invention. The pixel circuit includes at least a transistor 810, a transistor 820, a capacitance element 830, and an organic EL element 840.

The transistor 810 can function as a selection transistor. That is, the transistor 810 controls the on state of the gate of the transistor 810 with the scan line 711. In the transistor 810, a gate, a source, and a drain are electrically connected to the scan line 711, the signal line 712, and the gate of the transistor 820, respectively.

The transistor 820 can function as a driving transistor. That is, the transistor 820 controls the light emission luminance of the organic EL element 840. In the transistor 820, a gate electrode, a source electrode, and a drain electrode are electrically connected to the source electrode of the transistor 810, the driving power supply line 714, and the anode electrode of the organic EL element 840, respectively.

In the capacitor element 830, one of the capacitor electrodes is connected to the gate of the transistor 820 and to the drain of the transistor 810. The other of the capacitor electrodes is connected to the anode of the organic EL element 840 and the drain of the transistor 820.

In the organic EL element 840, the anode is connected to the drain of the transistor 820, and the cathode is connected to the reference power supply line 716.

[ Structure of the first region ]

Fig. 9 is a cross-sectional view of a pixel 709 of a display device 700 according to an embodiment of the present invention. Specifically, fig. 9 is a cross-sectional view of the display device 700 shown in fig. 7 cut along the line C-C'.

The substrate 701 is composed of one or more layers. In the case of being composed of a plurality of layers, for example, a laminated structure including a first resin layer 701a, an inorganic layer 701b, and a second resin layer 701c is provided. In order to improve the adhesion between the first resin layer 701a and the second resin layer 701c, an inorganic layer 701b is preferably provided between the first resin layer 701a and the second resin layer 701 c. As a material of the first resin layer 701a and the second resin layer 701c, for example, acrylic resin, polyimide, polyethylene terephthalate, polyethylene naphthalate, or the like can be used. As a material of the inorganic layer 701b, for example, silicon nitride, silicon oxide, or amorphous silicon can be used.

An undercoat layer 802 is provided on the substrate 701. The undercoat layer 802 is provided with a silicon oxide layer or a silicon nitride layer, for example, in a single layer or in a stacked layer. In this embodiment, the undercoat layer 802 has a laminated structure including three layers of a silicon oxide layer 802a, a silicon nitride layer 802b, and a silicon oxide layer 802 c. The silicon oxide layer 802a can improve adhesion to the substrate 701. The silicon nitride layer 802b can function as a barrier film for moisture and impurities from the outside. The silicon oxide layer 802c can function as a barrier film that prevents hydrogen contained in the silicon nitride layer 802b from diffusing to the semiconductor layer side described later.

In addition, the inorganic layer 803 may be provided in the undercoat layer 802 so as to correspond to a portion where the transistor 820 is provided. By providing the inorganic layer 803, a back gate effect can be given to the transistor 820 by suppressing a change in transistor characteristics due to light entering from the back surface of the channel of the transistor 820 or the like, or by forming the inorganic layer 803 with a conductive layer and applying a predetermined potential.

A transistor 820 is provided over the undercoat layer 802. The transistor 820 includes a semiconductor layer 804, a gate insulating layer 805, and a gate electrode 806 a. As the transistor 820, an example using an nch transistor is shown, but a pch transistor may be used. In this embodiment, the nchTFT has a structure in which low-

concentration impurity regions

804b and 804c are provided between a channel region 804a and a source region 804d or a drain region 804e (high-concentration impurity region). As a material of the semiconductor layer 804, an oxide semiconductor such as amorphous silicon, polycrystalline silicon, or IGZO can be used. As a material of the gate insulating layer 805, for example, silicon oxide or silicon nitride can be used. In addition, the gate insulating layer 805 can be a single layer or stacked layers. As the gate electrode 806a, for example, MoW can be used. In fig. 9, a structure of the transistor 820 is shown, and a structure of the transistor 810 is also the same as that of the transistor 820. Note that although the connection relationship between the transistor 820 and the layer further above is shown in the following description, the connection relationship is not limited to the transistor 820, and the connection relationship may be made to a transistor other than the transistor 820.

An interlayer insulating layer 807 is provided so as to cover the gate electrode 806 a. As a material of the interlayer insulating layer 807, for example, silicon oxide or silicon nitride can be used. In addition, the interlayer insulating layer 807 can be a single layer or a stacked layer. A source electrode 808a or a drain electrode 808b is provided on the interlayer insulating layer 807. The source electrode 808a or the drain electrode 808b is connected to the source region 804d and the drain region 804e of the semiconductor layer 804 through openings in the interlayer insulating layer 807 and the gate insulating layer 805, respectively.

Here, a conductive layer 806b is provided over the gate insulating layer 805. The conductive layer 806b is formed in the same process as the gate electrode 806 a. The conductive layer 806b forms a capacitor with the source region 804d or the drain region 804e of the semiconductor layer 804 with the gate insulating layer 805 interposed therebetween. In the conductive layer 806b, a capacitor is formed by the source electrode 808a or the drain electrode 808b with the interlayer insulating layer 807 interposed therebetween.

An insulating layer 809 is provided over the source electrode 808a or the drain electrode 808 b.

A planarization film 811 is provided on the insulating layer 809. As a material of the planarizing film 811, an organic material such as a photosensitive acrylic resin or polyimide can be used. By providing the planarizing film 811, the steps due to the transistors 820 can be planarized.

Transparent

conductive films

812a and 812b are provided on the planarization film 811. The transparent conductive film 812a is connected to the source electrode 808a or the drain electrode 808b through the opening portions of the planarization film 811 and the insulating layer 809.

An insulating layer 813 is provided over the transparent

conductive films

812a and 812 b. In the insulating layer 813, openings are provided in a region overlapping with the transparent conductive film 812a and the source electrode 808a or the drain electrode 808b and a region between the transparent conductive film 812a and the transparent conductive film 812b of an adjacent pixel.

A pixel electrode 822 is provided over the insulating layer 813. The pixel electrode 822 is connected to the transparent conductive film 812a through an opening of the insulating layer 813. In this embodiment mode, the pixel electrode 822 is formed as a reflective electrode. The reflective electrode may have a stacked structure of a transparent conductive material such as IZO (indium zinc oxide) or ITO (indium tin oxide) and a material having high reflectance such as Ag.

An insulating layer 825 serving as a partition is provided at a boundary between the pixel electrode 822 and the pixel electrode 822 of an adjacent pixel. Insulating layer 825 is referred to as a weir or rib. As a material of the insulating layer 825, the same organic material as that of the planarization film 811 can be used. The insulating layer 825 is opened so as to expose a part of the pixel electrode 822.

Here, the planarizing film 811 and the insulating layer 825 are in contact with each other in an opening portion provided in the insulating layer 813. With such a structure, at the time of heat treatment at the time of forming the insulating layer 825, moisture and gas released from the planarization film 811 can be removed from the insulating layer 825 through the opening portion of the insulating layer 813. This can suppress peeling at the interface between the planarization film 811 and the insulating layer 825.

After the insulating layer 825 is formed, an organic layer 823 for forming the organic EL element 840 is formed. The organic layer 823 is formed by stacking at least a hole transporting layer, a light emitting layer, and an electron transporting layer in this order from the pixel electrode 822 side. In fig. 9, the organic layer 823 is selectively provided for each pixel 709, but a light-emitting layer in the organic layer 823 may be selectively provided for each pixel 709, and a hole transporting layer and an electron transporting layer may be provided so as to cover all the pixels. These layers are formed using vapor deposition apparatus 100. Further, not only the hole transporting layer and the electron transporting layer, but also the light emitting layer may be provided in such a manner as to cover all the pixels. In the case where the light-emitting layer is provided so as to cover all the pixels, the following structure can be adopted: white light is obtained in all the pixels, and a desired color wavelength portion is extracted by a color filter (not shown).

After the organic layer 823 is formed, the counter electrode 824 is formed. In this embodiment, since the organic EL element 840 has a top emission structure, the counter electrode 824 needs to have light transmittance. The top emission structure is a structure in which light is emitted from the counter electrode 824 disposed on the pixel electrode 822 with the organic layer 823 interposed therebetween. In this embodiment, a thin MgAg film is formed as the counter electrode 824 to the extent that light emission from the organic EL layer is transmitted therethrough. When the organic layer 823 is formed in this order, the pixel electrode 822 serves as an anode and the counter electrode 824 serves as a cathode.

A sealing film 850 is provided over the counter electrode 824 of the organic EL element 840. The sealing film 850 has one function of preventing moisture from entering the organic layer 823 from the outside, and a film having high gas barrier properties is required as the sealing film 850. Therefore, the sealing film 850 preferably includes an inorganic insulating film. As the structure of the sealing film 850, for example, a stacked structure of the first inorganic insulating film 831, the first organic insulating film 832, and the second inorganic insulating film 833 can be used.

As a material of the first inorganic insulating film 831 and the second inorganic insulating film 833, for example, silicon nitride, aluminum nitride, or the like can be used. In addition, the first inorganic insulating film 831 and the second inorganic insulating film 833 may be the same material.

As a material of the first organic insulating film 832, for example, an acrylic resin, an epoxy resin, a polyimide resin, a silicone resin, a fluororesin, a siloxane resin, or the like can be used.

Next, a structure of the sealing film 850 on the upper side will be described.

A second organic insulating film 834 is provided over the sealing film 850 so as to cover the first region 703. The second organic insulating film 834 can function as a mask for etching the first inorganic insulating film 831 and the second inorganic insulating film 833. As a material of the second organic insulating film 834, for example, an adhesive material such as an acrylic resin, a rubber-based resin, a silicone-based resin, or a urethane-based resin can be used.

A polarizer 702 is provided over the second organic insulating film 834. Polarizer 702 has a laminated construction including 1/4 wavelength plates and a linear polarizer. With this structure, light from the light-emitting region can be emitted to the outside from the display-side surface of the polarizer 702.

In the display device 700, a cover glass may be provided on the polarizer 702 as necessary. A touch sensor or the like may be formed on the cover glass or the sealing film. In this case, a filler using a resin or the like may be sealed in order to fill the gap between the polarizer 702 and the cover glass.

As described above, according to the display device 700 of the present embodiment, since the organic layer 823 of the organic EL element 840 is formed using the vapor deposition apparatus 100, the positional shift of the organic layer 823 in the pixel 709 is suppressed, and the organic layer 823 is uniformly formed on the insulating layer 825. In addition, in the case where the light-emitting layer is provided so as to cover all the pixels, positional displacement of the end portion of the first region 703 is also suppressed.

Embodiments can be implemented by appropriately combining the schemes as long as they do not contradict each other. In addition, a person skilled in the art can appropriately add, delete, or modify the design of components or add, omit, or modify the conditions of the steps based on the embodiments of the embodiments, and the scope of the present invention is included as long as the gist of the present invention is achieved.

Note that, even if the operation and effect is other than the operation and effect according to the above-described embodiments, the operation and effect which can be clarified by the description of the present specification or which can be easily predicted by a person skilled in the art is of course understood to be the operation and effect according to the present invention.

Claims

1. A method for manufacturing a display device, in which an organic material is deposited on a substrate using a deposition mask, the method comprising:

the vapor deposition mask is disposed so as to face the substrate,

detecting a first gap (l) between the substrate and the evaporation mask at a first position₁)，

Detecting a second gap (l) between the substrate and the evaporation mask at a second position₂)，

The first gap (l)₁) And said second gap (l)₂) The adjustment is made to satisfy the formula 3,

wherein L is₁₂Is the distance between the first position and the second position.

2. The method for manufacturing a display device according to claim 1, wherein:

the method satisfies the formula 4 shown in the specification,

3. the method for manufacturing a display device according to claim 1 or 2, wherein:

a third gap (l) between the substrate and the evaporation mask at a third position is also detected₃)，

The first gap (l)₁) And the third gap (l)₃) The adjustment is made to satisfy the equation 5,

wherein L is₁₃Is the distance between the first position and the third position.

4. A method of manufacturing a display device according to claim 3, wherein:

the formula (6) is satisfied,

5. the method for manufacturing a display device according to claim 1, wherein:

the substrate and the vapor deposition mask are arranged so that surfaces thereof facing each other face in a direction intersecting a vertical direction,

in the vertical direction, the first position is located above the second position.

6. The method for manufacturing a display device according to claim 1, wherein:

the first position and the second position are each near any one of four corners of the substrate.

7. The method for manufacturing a display device according to claim 1, wherein:

the first gap (l)₁) And said second gap (l)₂) Each adjusting synchronously.

8. A method for manufacturing a display device, which uses a vapor deposition mask to deposit an organic material on a substrate, is characterized in that:

the vapor deposition mask is disposed so as to face the substrate,

detecting a first gap between the substrate and the evaporation mask at a first position,

detecting a second gap between the substrate and the evaporation mask at a second position,

simultaneously adjusting the first position and the second position such that a difference between the first gap and the second gap becomes smaller.

9. The method for manufacturing a display device according to claim 8, wherein:

has n detection positions including the first position and the second position, detects each gap between the substrate and the vapor deposition mask from the first position to the nth position,

simultaneously adjusting the first position to the nth position so that a difference between a maximum value and a minimum value in the gaps becomes smaller,

wherein n is a natural number of 3 or more.

10. The method for manufacturing a display device according to claim 9, wherein:

the first to nth positions are provided near an end of the substrate.

11. The method for manufacturing a display device according to claim 10, wherein:

the substrate is rectangular, and all or part of the first position to the nth position are arranged at four corners of the substrate.

12. An evaporation apparatus, comprising:

a mechanism for disposing the vapor deposition mask opposite to the substrate;

detecting a first gap (l) between the substrate and the evaporation mask at a first position₁) The first detecting unit of (1);

detecting a second gap (l) between the substrate and the evaporation mask at a second position₂) The second detection unit of (1);

adjusting the first gap (l)₁) The first regulating portion of (1); and

adjusting the second gap (l)₂) The second regulating portion of (a) is,

the first and second regulating parts regulate the first gap (l)₁) And said second gap (l)₂) The adjustment is made to satisfy the formula 9,

13. The vapor deposition apparatus according to claim 12, wherein:

the expression 10 is satisfied, and the method,

14. the vapor deposition apparatus according to claim 12 or 13, further comprising:

detecting a third gap (l) between the substrate and the evaporation mask at a third position₃) The third detecting unit of (1); and

adjusting the third gap (l)₃) The third adjusting portion of (a) is provided,

the first and third regulating parts regulate the first gap (l)₁) And the third gap (l)₃) The adjustment is made to satisfy the equation 11,

15. The vapor deposition apparatus according to claim 14, wherein:

the formula 12 is satisfied, and the formula is shown,

16. the vapor deposition apparatus according to claim 12 or 13, wherein:

the substrate and the vapor deposition mask are configured such that surfaces thereof facing each other are arranged in a direction intersecting a vertical direction,

in the vertical direction, the first adjustment portion is located above the second adjustment portion.

17. The vapor deposition apparatus according to claim 12, wherein:

18. The vapor deposition apparatus according to claim 12, wherein:

the first and second adjustment portions are synchronized.

19. An evaporation apparatus, comprising:

a mechanism for disposing a vapor deposition mask so as to face a substrate, the substrate and the vapor deposition mask being disposed so that surfaces thereof that face each other face in a direction intersecting a vertical direction;

a first detecting section that detects a first gap between the substrate and the vapor deposition mask at a first position;

a second detecting section for detecting a second gap between the substrate and the vapor deposition mask at a second position;

a first adjusting portion that adjusts the first gap; and

a second regulating portion that regulates the second gap,

the first and second adjusting portions simultaneously adjust the first and second positions so that a difference between the first and second gaps becomes smaller.

20. The vapor deposition apparatus according to claim 19, wherein:

having n detection positions including the first position and the second position,

this coating by vaporization device includes:

the first to nth detecting portions that detect respective gaps between the substrate and the vapor deposition mask in the first to nth gaps at the first to nth positions; and

the first adjusting part to the nth adjusting part including the first adjusting part and the second adjusting part for adjusting each gap respectively,

wherein n is a natural number of 3 or more.

21. A vapor deposition apparatus according to claim 20, wherein:

the first to nth positions are provided near an end of the substrate.

22. A vapor deposition apparatus according to claim 21, wherein:

23. The vapor deposition apparatus according to claim 19, wherein:

the first and second adjusting portions are provided on the evaporation mask side.

24. The vapor deposition apparatus according to claim 23, wherein:

the substrate is also provided with a substrate side adjusting part for adjusting the position of the substrate on the side opposite to the evaporation mask.