CN112779499B

CN112779499B - Vapor deposition device and method for manufacturing display device

Info

Publication number: CN112779499B
Application number: CN202011180807.XA
Authority: CN
Inventors: 上村孝明; 平田教行; 水越宽文
Original assignee: Japan Display Inc
Current assignee: Japan Display Inc
Priority date: 2019-11-07
Filing date: 2020-10-29
Publication date: 2024-03-12
Anticipated expiration: 2040-10-29
Also published as: CN112779499A; JP2021075750A; KR20210055600A; JP7406958B2; KR102583616B1

Abstract

The invention provides a vapor deposition device and a method for manufacturing a display device, wherein the adjustment time of a gap between a substrate and a vapor deposition mask is shortened. The present invention also provides a vapor deposition device and a method for manufacturing a display device, each of which has reduced defects in the vapor deposition process. A method for manufacturing a display device, wherein an organic material is vapor-deposited on a substrate using a vapor deposition mask, wherein the vapor deposition mask is disposed so as to face the substrate, and a first gap (l) between the substrate at a first position and the vapor deposition mask is detected ₁ ) Detecting a second gap (l) between the substrate and the vapor deposition mask at a second position ₂ ) The first gap (l ₁ ) And the second gap (l ₂ ) Is adjusted to satisfy the requirement of 3,

Description

Vapor deposition device and method for manufacturing display device

Technical Field

One embodiment of the present invention relates to a vapor deposition apparatus. Further, one embodiment of the present invention relates to a method for manufacturing a display device using a vapor deposition device.

Background

As a display device, an organic EL display device (Organic Electroluminescence Display: organic electroluminescent display) using an organic electroluminescent material (organic EL material) for a light emitting element (organic EL element) in a display region is known. The organic EL display device is a so-called self-luminous display device that realizes display by emitting light from an organic EL material.

The organic EL element includes an organic EL material between an anode (anode) and a cathode (cathode). As the organic EL material, a low molecular material or a high molecular material is known, but a low molecular material capable of forming a thin film by a vapor deposition method is often used.

As one of vapor deposition apparatuses used in a vapor deposition method, a vertical vapor deposition apparatus in which a substrate is vertically arranged in a vapor deposition apparatus is known (for example, see patent document 1 and patent document 2). Since the vertical vapor deposition apparatus stands up a large substrate for processing, there is an advantage that the occupied area of the vapor deposition apparatus can be reduced as compared with the horizontal vapor deposition apparatus.

Prior art literature

Patent literature

Patent document 1: japanese patent application laid-open No. 2012-84544.

Patent document 2: japanese patent application laid-open No. 2014-70239.

Disclosure of Invention

In the vertical vapor deposition apparatus, unlike the horizontal vapor deposition apparatus, the substrate and the vapor deposition mask are vertically arranged in the vertical direction (vertical direction, gravitational direction). Therefore, the vertical vapor deposition apparatus has a problem different from the horizontal vapor deposition apparatus. For example, in the alignment of the substrate and the vapor deposition mask, the vapor deposition mask is attracted to the vicinity of the substrate by magnetic force, and in the case of the horizontal vapor deposition device, since the direction of the magnetic force matches the direction of the gravitational force, the influence of the gravitational force in the alignment is small. On the other hand, in the case of the vertical vapor deposition device, since the direction of the magnetic force and the direction of the gravitational force are different, positional displacement due to the influence of the gravitational force occurs. When the substrate is enlarged, the amount of positional shift in positional alignment becomes significant.

The inventors of the present invention have intensively studied and found that there is a correlation between the distance (gap) between the substrate and the vapor deposition mask before the alignment of the substrate and the vapor deposition mask and the positional deviation in the vertical vapor deposition apparatus. Further, the present inventors have found that by controlling the gap between the substrate and the vapor deposition mask, it is possible to reduce defects caused by positional displacement in the vertical vapor deposition apparatus.

In the horizontal vapor deposition device, even if the gap between the substrate and the vapor deposition mask is manually adjusted, the positional deviation can be sufficiently adjusted. However, in the vertical vapor deposition apparatus, in the case of manually adjusting the gap between the substrate and the vapor deposition mask, the fine adjustment is required to be performed a plurality of times, which takes too much time, and thus it is difficult to adjust the gap for each substrate.

In view of the above, an object of the present invention is to provide a vapor deposition apparatus and a method for manufacturing a display device, in which the adjustment time of the gap between a substrate and a vapor deposition mask is shortened. Another object of the present invention is to provide a vapor deposition apparatus and a method for manufacturing a display device, which reduce defects in a vapor deposition process.

In a method for manufacturing a display device according to an embodiment of the present invention, an organic material is vapor-deposited on a substrate using a vapor deposition mask, wherein the vapor deposition mask is disposed so as to face the substrate, and a first gap (l ₁ ) Detecting a second gap (l) between the substrate and the vapor deposition mask at a second position ₂ ) The first gap (l ₁ ) And the second gap (l ₂ ) Adjusted to satisfy equation 3.

Further, a vapor deposition device according to an embodiment of the present invention includes: a mechanism for disposing a vapor deposition mask opposite to the substrate; detecting a first gap (l) between the substrate and the vapor deposition mask at a first position ₁ ) Is a first detection unit of (a); detecting a second gap (l) between the substrate and the vapor deposition mask at a second position ₂ ) A second detection unit of (a); adjusting the first gap (l ₁ ) Is provided with a first adjusting part; and adjusting the second gap (l ₂ ) The first adjusting portion and the second adjusting portion of the first and second adjusting portions set the first gap (l ₁ ) And a second gap (l ₂ ) Adjusted to satisfy equation 9.

Here, L in the formulas 3 and 9 ₁₂ Is a first position and the second positionDistance between locations.

In addition, a method for manufacturing a display device according to an embodiment of the present invention includes depositing an organic material on a substrate using a deposition mask, wherein the deposition mask is disposed so as to face the substrate, the substrate and the deposition mask are disposed so that surfaces facing each other face a direction intersecting a vertical direction, detecting a first gap between the substrate and the deposition mask at a first position, detecting a second gap between the substrate and the deposition mask at a second position, and adjusting the first position and the second position so that a difference between the first gap and the second gap is small.

Further, a vapor deposition device according to an embodiment of the present invention includes: a mechanism for disposing the vapor deposition mask opposite to the substrate and disposing the substrate and the vapor deposition mask with the opposite surfaces facing each other in a direction intersecting the vertical direction; a first detection unit for detecting a first gap between the substrate at the first position and the vapor deposition mask; a second detecting unit for detecting a second gap between the substrate at a second position and the vapor deposition mask; a first adjusting portion that adjusts the first gap; and a second adjusting portion that adjusts the second gap, the first adjusting portion and the second adjusting portion simultaneously adjusting the first position and the second position such that a difference between the first gap and the second gap becomes smaller.

According to one embodiment of the present invention, the adjustment time of the gap between the substrate and the vapor deposition mask can be shortened.

Drawings

Fig. 1A is a front view of a vapor deposition mask used in a vapor deposition device according to a first embodiment.

Fig. 1B is a cross-sectional view of a vapor deposition mask used in the vapor deposition device according to the first embodiment.

Fig. 1C is a partially enlarged view of a vapor deposition mask used in the vapor deposition device according to the first embodiment.

Fig. 2A is a schematic diagram showing a state before the position of the vapor deposition mask with respect to the substrate is fixed, which is performed in the vapor deposition apparatus according to the first embodiment.

Fig. 2B is a schematic diagram showing a state in which the position of the vapor deposition mask with respect to the substrate is fixed, which is performed in the vapor deposition apparatus according to the first embodiment.

Fig. 3 is a graph showing a correlation between a delta gap and a yield of a vapor deposition process with respect to the number of vapor deposition steps in the first embodiment.

Fig. 4 is a schematic cross-sectional view of the vapor deposition device according to the first embodiment.

Fig. 5 is a schematic plan view of the vapor deposition device according to the first embodiment.

Fig. 6 is a flowchart of a vapor deposition process in the method for manufacturing a display device according to the second embodiment.

Fig. 7 is a schematic view of a display device of the second embodiment.

Fig. 8 is a circuit diagram of a pixel of the display device of the second embodiment.

Fig. 9 is a cross-sectional view of a pixel of the display device of the second embodiment.

Description of the reference numerals

100: vapor deposition device, 110: vapor deposition source, 120: support part, 130: substrate clamp, 130-1: first substrate jig, 130-2: second substrate jig, 140: optical sensor, 140-1: first optical sensor, 140-2: second optical sensor, 140-3: third optical sensor, 140-4: fourth optical sensor, 140-5: fifth optical sensor, 140-6: sixth optical sensor, 150: clamp for vapor deposition mask, 150-1: first jig for vapor deposition mask, 150-2: second jig for vapor deposition mask, 150-3: third jig for vapor deposition mask, 150-4: fourth jig for vapor deposition mask, 150-5: fifth jig for vapor deposition mask, 150-6: sixth jig for vapor deposition mask, 160: adjustment part, 160-1: first adjusting part, 160-2: second adjusting part, 160-3: third adjusting part, 160-4: fourth adjusting part, 160-5: fifth adjusting part, 160-6: sixth adjustment portion, 170: magnet portion, 180: position alignment camera, 190: substrate-side adjusting section, 190-1: first substrate-side adjustment section, 190-2: second substrate side adjustment unit, 200: vapor deposition mask, 210: mask frame, 220: metal mask, 230: opening, 300: substrate, 700: display device, 701: substrate, 701a: first resin layer, 701b: inorganic layer, 701c: second resin layer, 702: polarizer, 703: first region, 704: scan line driver circuit, 706: drive IC,707: terminal, 708: flexible printed circuit board 709: pixel, 710: second region, 711: scan line, 712: signal line, 714: drive power supply line, 716: reference power line, 730: bending region, 740: light emitting element, 802: primer layer, 802a: silicon oxide layer, 802b: silicon nitride layer, 802c: silicon oxide layer, 803: inorganic layer, 804: semiconductor layer, 804a: channel region, 804b: low concentration impurity region, 804d: source region, 804e: drain region, 805: gate insulating layer, 806a: gate electrode, 806b: conductive layer, 807: interlayer insulating layer, 808a: source electrode, 808b: drain electrode, 809: insulating layer, 810: transistor, 811: planarization film, 812a: transparent conductive film, 812b: transparent conductive film, 813: insulating layer, 820: transistor 822: pixel electrode 823: organic layer, 824: counter electrode, 825: insulating layer, 830: capacitive element 831: first inorganic insulating film, 832: a first organic insulating film, 833: a second inorganic insulating film 834: second organic insulating film, 840: organic EL element, 850: and (3) a sealing film.

Detailed Description

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in various forms within a range not departing from the gist thereof, and is not limited to the description of the embodiments illustrated below. In order to make the description more clear, the drawings may schematically show the width, thickness, shape, etc. of each part as compared with the actual embodiment, but are only examples, and do not limit the explanation of the present invention. In the present specification and the drawings, elements having the same functions as those described with respect to the drawings already appearing are denoted by the same reference numerals, and duplicate description may be omitted.

In the present specification and claims, "upper" and "lower" refer to relative positional relationships with reference to a surface (hereinafter, simply referred to as "surface") of a substrate on which a light-emitting element is formed. For example, in this specification, a direction from the surface of the substrate toward the light emitting element is referred to as "up", and a direction opposite thereto is referred to as "down". In the present specification and claims, when a state in which another structure is disposed above a certain structure is described, unless otherwise specified, both a case in which another structure is disposed immediately above in contact with a certain structure and a case in which another structure is disposed above a certain structure with another structure interposed therebetween are included.

< first embodiment >

Referring to fig. 1A to 5, a vapor deposition device 100 according to an embodiment of the present invention will be described.

First, a vapor deposition mask 200 used in the vapor deposition apparatus 100 of the present embodiment will be described.

[ vapor deposition mask ]

Fig. 1A is a front view of the vapor deposition mask 200. Fig. 1B is a cross-sectional view of the vapor deposition mask 200 cut along line A-A' shown in fig. 1A. Fig. 1C is a partially enlarged view of the region B shown in fig. 1A.

As shown in fig. 1A and 1B, the vapor deposition mask 200 includes a mask frame 210 and a metal mask 220. The mask frame 210 has a rectangular opening at its center, and a metal mask 220 is provided so as to cover the opening. That is, the outer peripheral portion of the metal mask 220 is fixed to the mask frame 210.

The metal mask 220 may be welded to the mask frame 210 or may be fixed by an adhesive. When the metal mask 220 is fixed to the mask frame 210 by an adhesive, an epoxy adhesive having heat resistance is preferably used.

As shown in fig. 1C, a plurality of openings 230 are provided in the metal mask 220. The vapor deposition material passing through the opening 230 is deposited on the substrate 300 (see fig. 2A), and a pattern of the opening 230 is formed on the substrate 300. The pattern of the opening 230 may be a pattern corresponding to the arrangement pattern of the pixels of the substrate 300, or may be a pattern of a part of the pixels of the substrate 300. The pattern of the openings 230 may be, for example, a matrix or a staggered pattern.

The mask frame 210 is preferably made of a rigid material so as not to generate strain in the vapor deposition mask 200 in order to support the metal mask 220. The rigid material is, for example, stainless steel (SUS), iron-nickel alloy, or aluminum alloy.

The thickness of the mask frame 210 is not particularly limited, and is, for example, 5mm to 100 mm. The mask frame 210 may be constituted by a plurality of structures. When the thickness of the mask frame 210 is small, the rigidity of the mask frame 210 is reduced, and thus strain is easily generated. On the other hand, when the thickness of the mask frame 210 is large, the weight of the vapor deposition mask 200 increases, and therefore, the use of the vapor deposition mask 200 in the vapor deposition apparatus 100 becomes difficult. Therefore, the thickness of the mask frame 210 is preferably in the above range.

The metal mask 220 is preferably made of a material having good workability so as to provide a plurality of openings 230. As a material of the metal mask 220, for example, stainless steel, nickel materials, iron-nickel alloy, aluminum alloy, or the like can be used. In addition, in the case where a fine opening 230 like a pixel pattern of a light emitting layer of an organic EL element is required, the position of the metal mask 220 is fixed by attracting it to the vicinity of the substrate 300 by magnetic force. Therefore, the material of the metal mask 220 preferably contains a magnetic material. The magnetic material is, for example, pure iron, carbon steel, W steel, cr steel, co steel, KS steel, MK steel, NKS steel, cuNiCo steel, al-Fe alloy, or the like. Further, a magnetic material may be applied to the surface of the metal mask 220.

The thickness of the metal mask 220 is not particularly limited, and is, for example, 100 μm or less, preferably 2 μm or more and 10 μm or less. In the case where the thickness of the metal mask 220 is small, rigidity becomes weak, and thus the metal mask 220 is easily broken. In addition, when the thickness of the metal mask 220 is small, deformation of the metal mask 220 due to radiant heat at the time of vapor deposition is also liable to occur. On the other hand, when the thickness of the metal mask 220 is large, the height of the side wall of the opening 230 becomes large, and therefore, a phenomenon (shadow effect) occurs in which the vapor deposition material hardly enters the opening 230. Therefore, the thickness of the metal mask 220 is preferably in the above range.

The vapor deposition apparatus 100 is a so-called vertical vapor deposition apparatus, and the vapor deposition mask 200 is vertically arranged in a vertical direction (vertical direction, gravitational direction). In the case where the vapor deposition mask 200 has a rectangular shape having a pair of long sides and a pair of short sides, the vapor deposition mask 200 may be arranged with the long sides upright, or with the short sides upright. The vertical direction (vertical direction, gravitational direction) is not limited to the direction perpendicular to the ground plane of the vapor deposition device 100, and includes a substantially perpendicular direction. Further, the vapor deposition mask 200 of the vapor deposition apparatus 100 may be disposed obliquely to the longitudinal direction. When the vapor deposition mask 200 is tilted, the tilt angle with respect to the longitudinal direction is, for example, 0 ° or more and 30 ° or less.

Next, the position of the vapor deposition mask 200 with respect to the substrate 300 before vapor deposition in the vapor deposition apparatus 100 will be described.

[ fixing of the position of the vapor deposition mask relative to the substrate ]

Fig. 2A is a schematic diagram showing a state before the position of the vapor deposition mask 200 with respect to the substrate 300 is fixed. Fig. 2B is a schematic diagram showing a state in which the position of the vapor deposition mask 200 with respect to the substrate 300 is fixed.

Fig. 2A and 2B show a mask frame 210 and a metal mask 220 of the vapor deposition mask 200, a substrate 300, and a support portion 120 and a magnet portion 170 that are part of the vapor deposition apparatus 100. The substrate 300 is supported by the support portion 120 and is vertically arranged. The vapor deposition mask 200 is also arranged vertically like the substrate 300. The vapor deposition mask 200 and the substrate 300 are arranged apart from each other with a predetermined gap, and the gap is defined as a gap l.

The magnet portion 170 is provided to face the vapor deposition mask 200 and the substrate 300 through the support portion 120. In other words, the magnet portion 170 is located on the opposite side of the support portion 120 from the side on which the vapor deposition mask 200 and the substrate 300 are disposed.

As shown in fig. 2A, when the magnet portion 170 is separated from the support portion 120, the gap (gap l) between the vapor deposition mask 200 and the substrate 300 is maintained at a constant value. On the other hand, as shown in fig. 2B, when the magnet portion 170 approaches the support portion 120, the metal mask 220 is attracted by the magnetic force of the magnet portion 170, the space (gap l) between the vapor deposition mask 200 and the substrate 300 is narrowed, and finally, the metal mask 220 of the vapor deposition mask 200 contacts a part of the substrate 300, and the position of the vapor deposition mask 200 with respect to the substrate 300 is fixed. Then, vapor deposition of the vapor deposition material is performed, and a film having a pattern corresponding to the pattern of the vapor deposition mask 200 is formed on the substrate 300. In the vapor deposition step, the position of the vapor deposition mask 200 with respect to the substrate 300 is fixed, vapor deposition is performed, and alignment (registration) of the pattern of the vapor deposition mask 200 is included.

Fig. 3 is a graph showing a correlation between the delta gap and the yield in the vapor deposition step with respect to the number of vapor deposition steps. Here, the Δgap refers to a maximum gap l among the intervals (gaps l) between the substrate 300 and the vapor deposition mask 200 at each of the plurality of positions within the substrate 300 _max With minimum clearance l _min And (3) a difference. The yield of the vapor deposition step is the yield of products (for example, display devices) in the vapor deposition step except for defective products caused by the vapor deposition step. As a problem caused by the vapor deposition process, there is a so-called positional shift or the like in which no pattern or positional shift of a pattern is formed at a predetermined position on the substrate 300.

As shown in fig. 3, as the number of vapor deposition increases, the delta gap increases. This is because positional displacement due to magnetic force occurs locally. That is, in the vertical vapor deposition apparatus, since the direction of gravity and the direction of magnetic force are different, the in-plane distance between the substrate 300 and the vapor deposition mask 200 is likely to be varied, and the surface of the vapor deposition mask 200 facing the surface of the substrate 300 is likely to be inclined. Further, the Δ gap tends to be large with the passage of time. Therefore, as the number of vapor deposition times increases, in-plane variations in the vapor deposition process occur, and the yield in the vapor deposition process decreases. As described above, the inventors of the present invention found that the yield of the vapor deposition process decreases when the Δ gap increases. The gap between the substrate 300 and the vapor deposition mask 200 is adjusted every time the vapor deposition process is performed, and the yield of the vapor deposition process is improved, but in the conventional vertical vapor deposition apparatus, the adjustment of the gap between the substrate 300 and the vapor deposition mask 200 takes too much time, so that it is not practical to adjust the gap every time the vapor deposition process is performed, and only for every certain number of vapor deposition processes or every replacement of the vapor deposition mask 200.

On the other hand, in the vapor deposition apparatus 100 of the present embodiment, since the time for adjusting the gap between the substrate 300 and the vapor deposition mask 200 is short, the gap between the substrate 300 and the vapor deposition mask 200 can be adjusted every time vapor deposition is performed. Of course, the vapor deposition apparatus 100 according to the present embodiment can adjust the gap between the substrate 300 and the vapor deposition mask 200 for each predetermined number of vapor deposition times or for each replacement of the vapor deposition mask 200 according to the amount of allowable positional displacement, and in this case, the time for adjusting the gap between the substrate 300 and the vapor deposition mask 200 can be shortened.

Next, a vapor deposition device 100 according to the present embodiment will be described with reference to fig. 4 and 5.

Fig. 4 is a schematic cross-sectional view of the vapor deposition device 100 according to the present embodiment. As shown in fig. 4, the vapor deposition apparatus 100 includes a vapor deposition source 110, a support portion 120, a first substrate holder 130-1, a second substrate holder 130-2, a first optical sensor 140-1, a second optical sensor 140-2, a first vapor deposition mask holder 150-1, a second vapor deposition mask holder 150-2, a first adjustment portion 160-1, a second adjustment portion 160-2, a magnet portion 170, a position alignment camera 180, a first substrate side adjustment portion 190-1, and a second substrate side adjustment portion 190-2.

In the present specification, the first substrate holder 130-1 and the second substrate holder 130-2 are described as the substrate holder 130 without distinction. Similarly, the description will be made of the optical sensor 140, the vapor deposition mask jig 150, the adjusting section 160, and the substrate-side adjusting section 190, unless otherwise specified, in the case where the first optical sensor 140-1 and the second optical sensor 140-2, the first vapor deposition mask jig 150-1 and the second vapor deposition mask jig 150-2, the first adjusting section 160-1 and the second adjusting section 160-2, and the first substrate-side adjusting section 190-1 and the second substrate-side adjusting section 190-2 are distinguished.

The vapor deposition source 110 includes a crucible having an opening on the substrate side and a heater for heating the crucible. When the crucible is heated by the heater, the evaporated vapor deposition material flies out from the opening of the crucible. The vapor deposition material that has flown out is deposited on the substrate 300 through the opening 230 of the vapor deposition mask 200. The vapor deposition source 110 may be provided in plural or may be movable in the vertical direction.

The support portion 120 is capable of supporting the substrate 300, and preferably has a flat surface on the substrate 300 side so that the substrate 300 does not flex.

The substrate holder 130 can hold the substrate 300 and fix the substrate 300 to the support 120. As shown in fig. 4, when the substrate 300 is vertically arranged, the first substrate holder 130-1 fixes the upper portion of the substrate 300, and the second substrate holder 130-2 fixes the lower portion of the substrate 300. The substrate holder 130 may be provided in plural numbers on the upper and lower portions of the substrate 300, respectively. In particular, when the substrate 300 is rectangular, the substrate holder 130 is preferably provided at four corners of the substrate 300 so as to stably hold the substrate 300.

The optical sensor 140 can detect the gap l between the substrate 300 and the vapor deposition mask 200. Further, regarding the optical sensor 140, a plurality of optical sensors 140 are preferably provided so that the gap l can be detected at a plurality of positions. For example, as shown in fig. 4, when the substrate 300 is vertically arranged, it is preferable that the first optical sensor 140-1 detects the first gap l at the first position of the upper portion of the substrate 300 ₁ The second optical sensor 140-2 detects a second gap l at a second position of the lower portion of the substrate 300 ₂ 。

As the optical sensor 140, for example, a confocal sensor can be used. The confocal sensor disperses white light (LED, etc.) by a multi-lens, and focuses on the surface of the substrate 300 and the surface of the vapor deposition mask 200. The monochromatic light whose focal point is located on the surface of the substrate 300 and the surface of the vapor deposition mask 200 is detected by a spectrometer, and the distance (gap l) between the surface of the substrate 300 and the surface of the vapor deposition mask 200 is calculated. In addition, the optical sensor 140 is not limited to a confocal sensor. The optical sensor 140 may be a device capable of measuring the distance (gap l) between the surface of the substrate 300 and the surface of the vapor deposition mask 200, and may be constituted by a plurality of length measuring sensors. For example, the optical sensor 140 includes a first length sensor that measures the distance between the surface of the substrate 300 and a second length sensor that measures the distance between the surface of the vapor deposition mask 200, and the distance (gap l) between the surface of the substrate 300 and the surface of the vapor deposition mask 200 can be calculated from the first distance measured by the first length sensor and the second distance measured by the second length sensor.

The vapor deposition mask jig 150 can hold and fix the vapor deposition mask 200. The vapor deposition mask jig 150 is connected to the adjusting unit 160, and the position of the vapor deposition mask 200 can be adjusted by the adjusting unit 160. As shown in fig. 4, when the vapor deposition mask 200 is vertically arranged, the first vapor deposition mask jig 150-1 fixes the upper portion of the vapor deposition mask 200, and the second vapor deposition mask jig 150-2 fixes the lower portion of the vapor deposition mask 200. The vapor deposition mask jig 150 may be provided in plural numbers on the upper and lower portions of the vapor deposition mask 200. In particular, when the vapor deposition mask 200 is rectangular, the vapor deposition mask jig 150 is preferably disposed at four corners of the vapor deposition mask 200 so as to stably hold the vapor deposition mask 200.

The adjustment unit 160 can automatically move the vapor deposition mask jig 150 while detecting the gap l between the substrate 300 and the vapor deposition mask 200 with the optical sensor 140, and adjust the position of the vapor deposition mask 200 relative to the substrate 300 so that the gap l becomes equal to or smaller than a predetermined delta gap. That is, the adjusting unit 160 can receive a signal from the optical sensor 140, and automatically adjust the vapor deposition mask jig 150 based on the signal. Therefore, the adjustment unit 160 may be electrically connected to the optical sensor 140 so as to be communicably connected. The plurality of adjustment units 160 are preferably provided in the same manner as the optical sensor 140. For example, as shown in fig. 4, when the vapor deposition mask 200 is vertically arranged, the first adjusting unit 160-1 can adjust the first vapor deposition mask jig 150-1 based on the gap l detected by the first optical sensor 140-1, and the second adjusting unit 160-2 can adjust the second vapor deposition mask jig 150-2 based on the gap l detected by the second optical sensor 140-2.

The adjustment unit 160 can move the vapor deposition mask jig 150 in a direction perpendicular to the substrate 300 (left-right direction in the drawing), and adjust the gap l between the substrate 300 and the vapor deposition mask 200. The first adjusting unit 160-1 and the second adjusting unit 160-2 each include a motor connected to the vapor deposition mask jig 150 so as to be driven independently, and a control unit for controlling the driving of the motor. The control unit controls the driving of the motor based on the gap l detected by the optical sensor 140. That is, the control unit of the adjustment unit 160 adjusts the motor connected to the vapor deposition mask jig 150 so that the gap l detected by the optical sensor 140 falls within a predetermined range. The adjusting unit 160 is not limited to a motor, and may be an actuator capable of moving the vapor deposition mask jig 150. Further, the motor may be adjustable in a direction parallel to the substrate 300, in addition to the direction perpendicular to the substrate 300.

In fig. 4, 2 adjustment portions 160 are shown, but when the vapor deposition mask jigs 150 are provided at four corners of the vapor deposition mask 200, the adjustment portions 160 are provided for each vapor deposition mask jig 150. Namely, 4 adjusting portions are provided. The 4 adjustment units 160 can be independently driven, but it is preferable that the control units of the 4 adjustment units 160 are synchronized. This allows the 4-position drive to be performed simultaneously, and the delta gap to be adjusted in a short time.

In the case where the plurality of adjustment portions 160 are provided, the control portions of the plurality of adjustment portions 160 may be connected to each other. For example, by connecting the control unit of the first adjusting unit 160-1 and the control unit of the second adjusting unit 160-2 in advance, the first gap l by the first adjusting unit 160-1 can be performed in synchronization with each other ₁ And a second gap l based on the second regulating portion 160-2 ₂ Such adjustment of the plurality of gaps l. Although not shown, a total control unit of the control unit to which the plurality of adjustment units 160 are connected may be provided, and the plurality of adjustment units 160 may be synchronized to adjust the gap l under the control of the total control unit.

The magnet portion 170 is positioned close to the support portion 120, and the vapor deposition mask 200 is brought into contact with a part of the substrate 300 by the magnetic force of the magnet portion 170, so that the position of the vapor deposition mask 200 with respect to the substrate 300 can be fixed. Therefore, the magnet portion 170 includes a magnet for attracting the vapor deposition mask 200 to approach and a driving mechanism for driving the magnet. As the magnets included in the magnet portion 170, neodymium magnets, ferrite magnets, or the like can be used, for example.

The alignment camera 180 can capture an alignment mark provided at a predetermined position of the substrate 300 and an alignment mark provided at a predetermined position of the vapor deposition mask 200. The positioning camera 180 may be connected to the adjustment unit 160. The adjustment unit 160 adjusts the positions of the substrate 300 and the vapor deposition mask 200 based on the image captured by the alignment camera 180. The adjustment unit 160 can adjust the positions of the substrate 300 and the vapor deposition mask 200, for example, such that 2 alignment marks overlap or such that 2 alignment marks are aligned in a row. In addition, the position alignment camera 180 may be provided in plurality.

The substrate-side adjusting section 190 can move the support section 120 in a direction perpendicular to the substrate 300 (left-right direction in the drawing), and thereby bring the substrate 300 closer to the vapor deposition mask 200. In other words, the substrate-side adjusting section 190 can roughly adjust the gap l between the substrate 300 and the vapor deposition mask 200. The substrate-side adjusting portion 190 may have the same structure as the adjusting portion 160. Further, the substrate-side adjustment portion 190 and the support portion 120 may be connected, and the support portion 120 may be moved by sliding the substrate-side adjustment portion 190. Further, the support portion 120 may be pushed out to move by protruding the pin from the substrate-side adjustment portion 190.

By providing the substrate-side adjusting portion 190, the rough adjustment of the gap l can be performed by the substrate-side adjusting portion 190, and the fine adjustment of the gap l can be performed by the adjusting portion 160. The functions of fine adjustment of the adjustment portion 160 and coarse adjustment of the substrate-side adjustment portion 190 may be reversed. That is, the adjustment of the Δ gap may be performed while the rough adjustment of the gap l is performed by the adjustment unit 160 that adjusts the position of the mask side, and the fine adjustment of the gap l is performed by the substrate side adjustment unit 190 that adjusts the position of the substrate side.

A vapor deposition device 100 according to an embodiment of the present invention will be further described with reference to fig. 5.

Fig. 5 is a schematic plan view showing the vapor deposition device 100 according to the present embodiment. Specifically, fig. 5 is a schematic plan view of vapor deposition apparatus 100 showing a configuration related to adjustment of gap l between substrate 300 and vapor deposition mask 200. In fig. 5, only the substrate 300 is shown, and the vapor deposition mask 200 is omitted.

As shown in fig. 5, the vapor deposition apparatus 100 includes: first gap l for detecting first position of substrate 300 ₁ A first optical sensor 140-1 of (a); can adjust the first gap l ₁ A first vapor deposition mask jig 150-1; a first adjusting part 160-1 capable of adjusting the first vapor deposition mask jig 150-1; detecting a gap l of the second position of the substrate 300 ₂ A second optical sensor 140-2 of (a); can adjust the second gap l ₂ Is used for the second evaporation mask150-2; a second adjusting part 160-2 capable of adjusting the second vapor deposition mask jig 150-2; detecting a gap l of a third position of the substrate 300 ₃ A third optical sensor 140-3 of (a); can adjust the gap l ₃ A third vapor deposition mask jig 150-3; a third adjusting part 160-3 capable of adjusting the third vapor deposition mask jig 150-3; fourth gap l of fourth position of detection substrate 300 ₄ A fourth optical sensor 140-4 of (a); can adjust the fourth gap l ₄ A fourth vapor deposition mask jig 150-4; a fourth adjusting part 160-4 capable of adjusting the fourth vapor deposition mask jig 150-4; fifth gap l of fifth position of detection substrate 300 ₅ The fifth optical sensor 140-5 of (a); can adjust the fifth clearance l ₅ Fifth vapor deposition mask jig 150-5; a fifth adjusting part 160-5 capable of adjusting the fifth vapor deposition mask jig 150-5; sixth gap l of sixth position of detection substrate 300 ₆ A sixth optical sensor 140-6 of (a); can adjust the sixth gap l ₆ A sixth vapor deposition mask jig 150-6; the sixth adjusting portion 160-6 of the sixth vapor deposition mask jig 150-6 can be adjusted.

Here, the first position, the second position, the third position, and the fourth position are positions near four corners of the substrate 300. The first and fourth positions are located at an upper portion of the substrate 300 in the present drawing, and the second and third positions are located at a lower portion of the substrate 300. In addition, the first and third positions are located on opposite corners of the substrate 300, and the second and fourth positions are also located on opposite corners of the substrate 300. The fifth position is located intermediate the first position and the second position, and the sixth position is located intermediate the third position and the fourth position.

The first, second, third and fourth adjusting portions 160-1, 160-2, 160-3 and 160-4 are adjusted, respectively, such that the first gap l ₁ Second gap l ₂ Third gap l ₃ And a fourth gap l ₄ The diameter is 1.0mm or less. Preferably, the adjustment is made to 0.3mm.

In addition, in order to suppress in-plane variation in the substrate 300, the yield of the vapor deposition process is improved from the first gap l ₁ Second gap l ₂ Third gap l ₃ And fourthGap l ₄ Selecting the maximum gap l _max And minimum gap l _min The delta gap, which is the difference between them, is adjusted to be within a prescribed range. For example, the Δ gap is adjusted to satisfy equation 1.

l _max -l _min < 0.1mm … (1)

Preferably the delta gap is adjusted to satisfy equation 2.

l _max -l _min < 0.05mm … (3)

As described above, the adjustment unit 160 can adjust not only the gap l at each position but also the delta gap associated with each gap l. That is, by performing the 2-stage adjustment of the gap l, the in-plane deviation in the substrate 300 can be suppressed, and the yield of the vapor deposition process can be improved.

Further, the adjustment of the Δgap may include the distance between the detection positions of the gap l as a parameter.

For example, the gap l in the first position ₁ And a gap l of the second position ₂ One of them is the maximum gap l _max The other is the minimum gap l _min In the case of (a), the first and second adjusting parts 160-1 and 160-2 are adjusted so that the expression 3 is satisfied. Here, L ₁₂ Is the distance between the first location and the second location.

In order to further improve the yield of the vapor deposition process, the first adjusting unit 160-1 and the second adjusting unit 160-2 are preferably adjusted so as to satisfy expression 4.

Furthermore, for example, the gap l in the first position ₁ And a gap l of a third position ₃ One of them is the maximum gap l _max The other is the minimum gap l _min In the case of (a), the first adjusting portion 160-1 and the third adjusting portion 160-3 are adjusted so thatAnd equation 5 is satisfied. Here, L ₁₃ Is the distance between the first position and the third position.

In order to further suppress the in-plane deviation in the substrate 300, the first and third adjusting portions 160-1 and 160-3 are preferably adjusted so that expression 6 is satisfied.

Similarly, the fourth adjusting portion 160-4 and the second adjusting portion 160-2 and the fourth adjusting portion 160-4 and the third adjusting portion 160-3 can be adjusted, but the description thereof is omitted here.

The adjustment of the delta gap may be performed not only at 1 point but also at a plurality of points. That is, the substrate 300 may have n detection positions which are the first position, the second position, … …, and the n-th position (n is a natural number of 3 or more).

When the size of the substrate 300 is not less than a certain value (for example, not less than 1500mm×1850 mm), not only the four corners of the substrate 300 but also the gaps l between the intermediate positions of the substrate affect the yield of the vapor deposition process, and thus 6 detection positions may be provided. In this case, the fifth adjusting portion 160-5 and the sixth adjusting portion 160-6 respectively adjust the fifth gap l ₅ And a sixth gap l ₆ . Selecting the first to sixth positions with the largest gap l _max And minimum gap l _min In the above-mentioned two positions, the above-mentioned formulae 1 to 6 may be satisfied at 2 positions selected.

As described above, the vapor deposition device 100 according to the present embodiment can automatically adjust the gap l between the substrate 300 and the vapor deposition mask 200. In the case of automatically adjusting the gap l, the time required for the adjustment of the gap l is greatly shortened as compared with the case of manually adjusting the gap l. Therefore, the gap l can be adjusted for each vapor deposition, and the yield of the vapor deposition process can be improved. Further, by adjusting the Δ gap associated with the gap l at a plurality of positions in the substrate 300 so as to satisfy a predetermined expression, the yield of the vapor deposition process can be further improved.

< second embodiment >

A method for manufacturing a display device using a vapor deposition device according to an embodiment of the present invention will be described with reference to fig. 6. In the following, the configuration of the vapor deposition device 100 shown in fig. 4 and 5 may be described.

Fig. 6 is a flowchart of a vapor deposition process in the method for manufacturing a display device according to the present embodiment. The vapor deposition process shown in fig. 6 is 1 process in the process of manufacturing a display device, and is a process of forming an organic layer of an organic EL element by a vapor deposition method.

As shown in fig. 6, the vapor deposition step includes: a step of loading the substrate 300 (substrate loading step S110); a step of roughly adjusting the gap between the substrate 300 and the vapor deposition mask (a gap roughly adjusting step S120); a step of fine-adjusting the gap between the substrate 300 and the vapor deposition mask 200 (fine-adjusting step S125); a step of aligning the positions of the substrate 300 and the vapor deposition mask 200 (a position alignment step S130); a step of fixing the position of the vapor deposition mask 200 with respect to the substrate 300 (position fixing step S140); a step of evaporating the evaporation material (evaporation step S150); a step of releasing the position of the vapor deposition mask 200 (position fixation releasing step S160); and a step of carrying out the substrate 300 (substrate carrying-out step S170).

In the substrate loading step (S110), the substrate 300 is loaded into the vapor deposition apparatus 100, and the substrate 300 is held and fixed by the substrate clamp 130. The vapor deposition mask 200 may be provided in the vapor deposition device 100 before the substrate 300 is carried in, or may be provided after the substrate 300 is carried in and carried into the vapor deposition device 100.

In the gap rough adjustment step (S120), the substrate 300 and the vapor deposition mask 200 are brought close to each other using the optical sensor 140, the support portion 120, and the substrate-side adjustment portion 190. Specifically, the gap is detected by the optical sensor 140, and the substrate-side adjusting section 190 moves the support section 120 to adjust the gap to be equal to or smaller than a predetermined gap. The adjustment is rough adjustment, and the predetermined gap is, for example, 1cm or less.

In the fine adjustment step (S125), the gap between the substrate 300 and the vapor deposition mask 200 is fine-adjusted using the optical sensor 140, the vapor deposition mask jig 150, and the adjustment unit 160. Specifically, the optical sensor 140 detects the gap, and the adjusting unit 160 moves the vapor deposition mask jig 150 to adjust the gap to be equal to or smaller than a predetermined gap. The vapor deposition mask jig 150 is automatically adjusted by a motor included in the adjusting unit 160. The fine adjustment step (S125) of the gap may be performed every time the substrate is carried in, or may be performed after the substrate is carried in a plurality of times.

The gap l between the substrate 300 and the vapor deposition mask 200 is adjusted at a plurality of positions within the substrate 300. In particular, it is preferable that the first gap l is formed at a first position, a second position, a third position, and a fourth position near four corners of the substrate 300, respectively ₁ Second gap l ₂ Third gap l ₃ And a fourth gap l ₄ Is provided. Here, the first position and the fourth position are positions of the upper portion of the substrate 300 in a state where the substrate 300 is disposed, and the second position and the third position are positions of the lower portion of the substrate 300. In addition, the first and third positions are located at positions on the diagonal of the substrate 300, and the second and fourth positions are also positions on the diagonal of the substrate 300.

Fine adjustment of the gap l is performed in 2 stages. First, a first gap l ₁ Second gap l ₂ Third gap l ₃ And a fourth gap l ₄ Is regulated to be less than 1.0 mm. Preferably 1 gap l ₁ Second gap l ₂ Third gap l ₃ And a fourth gap l ₄ Is adjusted to 0.3mm. When the gap l becomes large, the effect of fine adjustment of the gap l becomes small. Therefore, the above range is preferable for the gap.

Then, the adjustment of the Δ gap is performed. Namely, from the first gap l ₁ Second gap l ₂ Third gap l ₃ And a fourth gap l ₄ Selecting the maximum gap l _max And minimum gap l _min The delta gap, which is the difference between them, is adjusted to be within a prescribed range. Specifically, by making and selectingThe adjusting portions 160 corresponding to the gaps l of the pair are moved independently and simultaneously, and adjusted so that the delta gap becomes smaller. For example, the Δ gap is adjusted to satisfy equation 7.

l _max -l _min < 0.1mm … (7)

Preferably the delta gap is adjusted to satisfy equation 8.

l _max -l _min < 0.05mm … (8)

As described above, the gaps l at the respective positions are adjusted not only independently but also the Δ gaps associated with the respective gaps l, whereby the in-plane deviation in the substrate 300 can be suppressed, and the yield of the vapor deposition process can be improved.

For example, the gap l in the first position ₁ And a gap l of the second position ₂ One of them is the maximum gap, and the other is the minimum gap, the gap l at the first position ₁ And a gap l of the second position ₂ Is adjusted to satisfy equation 9. Here, L ₁₂ Is the distance between the first location and the second location.

Further, the gap l of the first position ₁ And a gap l of the second position ₂ Preferably adjusted to satisfy equation 10.

Furthermore, the gap l in the first position ₁ And a gap l of a third position ₂ One of them is the maximum gap, and the other is the minimum gap, the gap l at the first position ₁ And a gap l of a third position ₃ Is adjusted to satisfy equation 11. Here, L ₁₃ Is the distance between the first position and the third position.

Further, the gap l of the first position ₁ And a gap l of a third position ₂ Preferably adjusted to satisfy equation 12.

In addition, the gap l of the first position can also be considered ₁ And a gap l at a fourth position ₂ One of them is the maximum gap l _max The other is the minimum gap l _min In the case of (2), the gap l of the second position ₂ And a gap l of a third position ₃ One of them is the maximum gap l _max The other is the minimum gap l _min In the case of (2), or the gap l of the third position ₃ And a gap l at a fourth position ₄ One of them is the maximum gap l _max The other is the minimum gap l _min However, the description is omitted here because the same is true for the above formula.

The adjustment of the delta gap may be performed not only at 1 point but also at multiple points. That is, the substrate may have n detection positions which are the first position, the second position, … …, and the n-th position (n is a natural number of 3 or more). In this case, each Δ gap from the first to nth positions is detected. Moreover, the adjustment is performed by the adjustment portion 160 such that the maximum gap l among them _max With minimum clearance l _min The difference becomes smaller. This can suppress in-plane variation in the substrate 300 during vapor deposition.

By adjusting not only the gaps l at the plurality of positions in the substrate 300 but also the delta gaps associated with the gaps l at the plurality of positions to satisfy a predetermined expression, in-plane variations in the substrate 300 can be suppressed, and hence the yield of the vapor deposition process can be further improved.

In the alignment step (S130), the alignment of the substrate 300 and the vapor deposition mask 200 is performed so that the pattern of the vapor deposition mask 200 corresponds to the pattern of the substrate 300. Specifically, the alignment mark of the substrate 300 and the alignment mark of the vapor deposition mask 200 are photographed using the alignment camera 180, and the adjustment unit 160 adjusts the positions of the substrate 300 and the vapor deposition mask 200 based on the photographed alignment mark. The positional alignment step (S130) may be performed after the fine adjustment step (S125) or before the fine adjustment step (S125).

In the position fixing step (S140) of the vapor deposition mask 200, the magnet portion 170 is brought close to the support portion 120. By the magnet portion 170 approaching the support portion 120, the vapor deposition mask 200 is brought into contact with a part of the substrate 300 by a magnetic force, and the position of the vapor deposition mask 200 with respect to the substrate 300 is fixed.

In the vapor deposition step (S150), vapor deposition of the vapor deposition material is performed using the vapor deposition source 110. An organic layer having a pattern corresponding to the pattern of the vapor deposition mask 200 is formed by depositing a vapor deposition material provided in the opening 230 of the vapor deposition mask 200 on the substrate 300.

In the vapor deposition mask 200 position fixation releasing step (S160), the magnet portion 170 is separated from the support portion 120. The magnet 170 is away from the support 120, and the vapor deposition mask 200 is also away from the substrate 300.

In the step of removing the substrate 300 (S170), the substrate 300 is removed from the vapor deposition device 100 by releasing the substrate 300 from the substrate holder 130.

As described above, according to the method of manufacturing a display device of the present embodiment, the vapor deposition step includes the fine adjustment step of the gap between the substrate 300 and the vapor deposition mask 200 (S125). That is, the gap l can be adjusted for each vapor deposition, and the yield of the vapor deposition process can be improved. The number of vapor deposition times, which is an allowable yield range, may be derived from the graph of fig. 3, and the gap l may be adjusted for each number of vapor deposition times based on the number of vapor deposition times. Further, by adjusting not only the gaps l at the plurality of positions in the substrate 300 but also the delta gaps associated with the gaps l at the plurality of positions so as to satisfy a predetermined expression (in other words, by performing fine adjustment in 2 steps), the yield in the vapor deposition process can be further improved.

< third embodiment >

An example of a structure of a display device 700 according to an embodiment of the present invention will be described with reference to fig. 7 to 9. The display device 700 has flexibility and is manufactured using the vapor deposition device 100.

Fig. 7 is a plan view of a display device 700 according to an embodiment of the present invention. The display device 700 is provided with a first region 703 and a second region 710 on a substrate 701. The second region 710 is located outside the first region 703.

The first region 703 is a so-called display region. In the first region 703, a plurality of pixels 709 are arranged in a matrix. The arrangement of the pixels 709 is not limited to a matrix. The arrangement of the pixels 709 may be staggered, for example.

The second region 710 is a so-called peripheral region. The second region 710 includes: 2 scanning line driving circuits 704 provided along the longitudinal direction of the first region 703; and a plurality of terminals 707 provided at the end of the substrate 701 along the short side direction of the first region 703. The 2 scanning line driving circuits 704 are disposed so as to sandwich the first region 703. Further, a plurality of terminals 707 are connected to the flexible printed circuit board 708. The drive IC706 is provided on the flexible printed circuit board 708.

Video signals and various control signals are supplied from a controller (not shown) external to the display device 700 via the flexible printed circuit board 708. The video signal is processed by the driver IC706 and then inputted to the plurality of pixels 709. Various circuit signals are input to the scanning line driving circuit 704 via the driving IC 706.

In addition to the video signal and various circuit signals, power for driving the scanning line driver circuit 704, the driver IC706, and the plurality of pixels 709 is supplied to the display device 700. Each of the plurality of pixels 709 has an organic EL element 840 described later. A part of the electric power supplied to the display device 700 is supplied to the organic EL element 840 included in each of the plurality of pixels 709, and the organic EL element 840 emits light.

The display device 700 may also be provided with a polarizer 702 on the first region 703.

[ Pixel Circuit ]

Fig. 8 shows a pixel circuit of each of a plurality of pixels 709 arranged in a display device 700 according to an embodiment of the present invention. The pixel circuit includes at least a transistor 810, a transistor 820, a capacitor element 830, and an organic EL element 840.

Transistor 810 can function as a select transistor. That is, the transistor 810 controls the on state of the gate of the transistor 810 by the scan line 711. In the transistor 810, a gate, a source, and a drain are electrically connected to the scan line 711, the signal line 712, and the gate of the transistor 820, respectively.

The transistor 820 can function as a driving transistor. That is, the transistor 820 controls the light emission luminance of the organic EL element 840. In the transistor 820, a gate, a source, and a drain are electrically connected to the source of the transistor 810, the driving power line 714, and the anode of the organic EL element 840, respectively.

In the capacitor 830, one of the capacitor electrodes is connected to the gate of the transistor 820 and is electrically connected to the drain of the transistor 810. The other of the capacitor electrodes is connected to the anode of the organic EL element 840 and the drain of the transistor 820.

In the organic EL element 840, an anode is connected to a drain of the transistor 820, and a cathode is connected to the reference power supply line 716.

[ Structure of first region ]

Fig. 9 is a cross-sectional view of a pixel 709 of a display device 700 according to an embodiment of the invention. Specifically, fig. 9 is a cross-sectional view of the display device 700 shown in fig. 7 cut along line c—c'.

The substrate 701 is composed of one or more layers. In the case of a multilayer structure, for example, a laminated structure including a first resin layer 701a, an inorganic layer 701b, and a second resin layer 701c is provided. In order to improve the adhesion between the first resin layer 701a and the second resin layer 701c, the inorganic layer 701b is preferably provided between the first resin layer 701a and the second resin layer 701 c. As a material of the first resin layer 701a and the second resin layer 701c, for example, an acrylic resin, polyimide, polyethylene terephthalate, polyethylene naphthalate, or the like can be used. As a material of the inorganic layer 701b, for example, silicon nitride, silicon oxide, or amorphous silicon can be used.

An undercoat layer 802 is provided on the substrate 701. The undercoat layer 802 is provided with a silicon oxide layer or a silicon nitride layer, for example, in a single layer or stacked layers. In this embodiment mode, the undercoat layer 802 has a stacked structure including three layers of a silicon oxide layer 802a, a silicon nitride layer 802b, and a silicon oxide layer 802 c. The silicon oxide layer 802a can improve adhesion to the substrate 701. The silicon nitride layer 802b can function as a barrier film against moisture and impurities from the outside. The silicon oxide layer 802c can function as a barrier film for preventing hydrogen contained in the silicon nitride layer 802b from diffusing to the semiconductor layer side described later.

In addition, the inorganic layer 803 may be provided in the undercoat layer 802 in correspondence with a portion where the transistor 820 is provided. By providing the inorganic layer 803, variation in transistor characteristics due to intrusion of light from the channel back surface of the transistor 820 or the like is suppressed, or the inorganic layer 803 is formed using a conductive layer, and a predetermined potential is applied, whereby a back gate effect can be applied to the transistor 820.

A transistor 820 is provided over the primer layer 802. The transistor 820 includes a semiconductor layer 804, a gate insulating layer 805, and a gate electrode 806a. As the transistor 820, an example using a nch transistor is shown, but a pch transistor may be used. In this embodiment mode, the nchTFT has a structure in which low-concentration impurity regions 804b and 804c are provided between a channel region 804a and a source region 804d or a drain region 804e (high-concentration impurity region). As a material of the semiconductor layer 804, an oxide semiconductor such as amorphous silicon, polysilicon, or IGZO can be used. As a material of the gate insulating layer 805, for example, silicon oxide or silicon nitride can be used. In addition, the gate insulating layer 805 can be a single layer or a stacked layer. As the gate electrode 806a, moW can be used, for example. In fig. 9, a structure of a transistor 820 is shown, and a structure of a transistor 810 is also similar to the transistor 820. Note that in the following description, the connection relation between the transistor 820 and the layer further above is shown, but this is not limited to the transistor 820, and may be a connection to a transistor other than the transistor 820.

An interlayer insulating layer 807 is provided so as to cover the gate electrode 806 a. As a material of the interlayer insulating layer 807, for example, silicon oxide or silicon nitride is used. Further, the interlayer insulating layer 807 can be a single layer or a stacked layer. A source electrode 808a or a drain electrode 808b is provided on the interlayer insulating layer 807. The source electrode 808a or the drain electrode 808b is connected to the source region 804d and the drain region 804e of the semiconductor layer 804 through openings of the interlayer insulating layer 807 and the gate insulating layer 805, respectively.

Here, a conductive layer 806b is provided over the gate insulating layer 805. The conductive layer 806b is formed in the same step as the gate electrode 806 a. The conductive layer 806b forms a capacitor with the source region 804d or the drain region 804e of the semiconductor layer 804 through the gate insulating layer 805. The conductive layer 806b forms a capacitor with the source electrode 808a or the drain electrode 808b interposed by an interlayer insulating layer 807.

An insulating layer 809 is provided over the source electrode 808a or the drain electrode 808b.

A planarizing film 811 is provided over the insulating layer 809. As a material of the planarizing film 811, an organic material such as photosensitive acrylic resin or polyimide can be used. By providing the planarizing film 811, a step caused by the transistor 820 can be planarized.

Transparent conductive films 812a and 812b are provided over the planarizing film 811. The transparent conductive film 812a is connected to the source electrode 808a or the drain electrode 808b through the planarizing film 811 and the opening of the insulating layer 809.

An insulating layer 813 is provided over the transparent conductive films 812a and 812b. In the insulating layer 813, openings are provided in a region overlapping the transparent conductive film 812a and the source electrode 808a or the drain electrode 808b and a region between the transparent conductive film 812a and the transparent conductive film 812b of an adjacent pixel.

A pixel electrode 822 is provided over the insulating layer 813. The pixel electrode 822 is connected to the transparent conductive film 812a through an opening of the insulating layer 813. In this embodiment mode, the pixel electrode 822 is formed as a reflective electrode. The reflective electrode may have a laminated structure of a transparent conductive material such as IZO (indium zinc oxide) or ITO (indium tin oxide) and a material having high reflectivity such as Ag.

An insulating layer 825 serving as a partition wall is provided at the boundary between the pixel electrode 822 and the pixel electrode 822 of an adjacent pixel. Insulating layer 825 is referred to as a dam or rib. As a material of the insulating layer 825, the same organic material as that of the planarizing film 811 can be used. The insulating layer 825 is opened so as to expose a portion of the pixel electrode 822.

Here, the planarizing film 811 and the insulating layer 825 are in contact with each other at an opening provided in the insulating layer 813. With such a structure, moisture and gas released from the planarizing film 811 can be removed from the insulating layer 825 through the opening portion of the insulating layer 813 during heat treatment in forming the insulating layer 825. This can suppress peeling at the interface between the planarizing film 811 and the insulating layer 825.

After the insulating layer 825 is formed, an organic layer 823 for forming the organic EL element 840 is formed. The organic layer 823 is laminated with at least a hole transport layer, a light emitting layer, and an electron transport layer in this order from the pixel electrode 822 side. In fig. 9, the organic layer 823 is selectively provided for each pixel 709, but a light-emitting layer in the organic layer 823 may be selectively provided for each pixel 709, and a hole transport layer and an electron transport layer may be provided so as to cover all pixels. These layers are formed using the vapor deposition apparatus 100. In addition, not only the hole transporting layer and the electron transporting layer, but also the light emitting layer may be provided in such a manner as to cover all pixels. In the case where the light-emitting layer is provided so as to cover all pixels, the following structure can be adopted: white light is obtained in all pixels, and a desired color wavelength portion is extracted by a color filter (not shown).

After the organic layer 823 is formed, a counter electrode 824 is formed. In this embodiment, since the organic EL element 840 has a top emission structure, the counter electrode 824 needs to have light transmittance. The top emission structure is a structure in which light is emitted from the counter electrode 824 disposed through the organic layer 823 on the pixel electrode 822. In this embodiment mode, a MgAg thin film having a degree of light emission and transmission from the organic EL layer is formed as the counter electrode 824. If the organic layer 823 is formed in the order described above, the pixel electrode 822 becomes an anode and the counter electrode 824 becomes a cathode.

A sealing film 850 is provided on the counter electrode 824 of the organic EL element 840. The sealing film 850 has one of functions of preventing moisture from entering the organic layer 823 from the outside, and a film having high gas barrier properties is required as the sealing film 850. Accordingly, the sealing film 850 preferably includes an inorganic insulating film. As the structure of the sealing film 850, for example, a stacked structure of the first inorganic insulating film 831, the first organic insulating film 832, and the second inorganic insulating film 833 can be used.

As a material of the first inorganic insulating film 831 and the second inorganic insulating film 833, for example, silicon nitride, aluminum nitride, or the like can be used. The first inorganic insulating film 831 and the second inorganic insulating film 833 may be made of the same material.

As a material of the first organic insulating film 832, for example, an acrylic resin, an epoxy resin, a polyimide resin, a silicone resin, a fluorine resin, a siloxane resin, or the like can be used.

Next, a structure above the sealing film 850 will be described.

A second organic insulating film 834 is provided over the sealing film 850 so as to cover the first region 703. The second organic insulating film 834 can function as a mask for etching the first inorganic insulating film 831 and the second inorganic insulating film 833. As a material of the second organic insulating film 834, an adhesive material such as an acrylic resin, a rubber-based resin, a silicone-based resin, or a urethane-based resin can be used, for example.

A polarizer 702 is disposed on the second organic insulating film 834. The polarizer 702 has a laminated structure including a 1/4 wavelength plate and a linear polarizer. With this structure, light from the light emitting region can be emitted from the display side surface of the polarizer 702 to the outside.

In the display device 700, a cover glass may be provided on the polarizer 702 as needed. A touch sensor or the like may be formed on the cover glass or the sealing film. In this case, a filler such as a resin may be filled in order to fill the gap between the polarizer 702 and the cover glass.

As described above, according to the display device 700 of the present embodiment, since the organic layer 823 of the organic EL element 840 is formed using the vapor deposition device 100, the positional displacement of the organic layer 823 in the pixel 709 is suppressed, and the organic layer 823 is uniformly formed on the insulating layer 825. In addition, in the case where the light-emitting layer is provided so as to cover all pixels, positional displacement of the end portion of the first region 703 is also suppressed.

The embodiments can be appropriately combined and implemented as long as they do not contradict each other. Those skilled in the art can appropriately add, delete, or change the design of the constituent elements based on the embodiments, or add, omit, or change the conditions of the steps, and the gist of the present invention is included in the scope of the present invention.

Further, even other operational effects than those of the above embodiments are clearly understood to be operational effects of the present invention, which are clearly understood from the description of the present specification or which can be easily predicted by those skilled in the art.

Claims

1. A method for manufacturing a display device, wherein an organic material is vapor-deposited on a substrate using a vapor deposition mask, the vapor deposition mask being a metal mask, the method comprising:

The substrate is arranged such that the surface of the substrate faces a direction intersecting the vertical direction,

the vapor deposition mask is disposed on the surface side of the substrate opposite to the substrate,

a magnet portion is disposed on the opposite side of the substrate from the vapor deposition mask so as to be spaced apart from the substrate,

detecting a first gap (l) between the substrate and the vapor deposition mask at a first position in the direction intersecting the vertical direction ₁ )，

Detecting a second gap (l) between the substrate and the vapor deposition mask at a second position in the direction intersecting the vertical direction ₂ )，

Detecting a third gap (l) between the substrate and the vapor deposition mask at a third position in the direction intersecting the vertical direction ₃ )，

Detecting a fourth gap (l) between the substrate and the vapor deposition mask at a fourth position in the direction intersecting the vertical direction ₄ )，

The first position and the third position are positioned on the opposite corners of the substrate, the second position and the fourth position are positioned on the opposite corners of the substrate,

for the first gap (l ₁ ) Said second gap (l ₂ ) Said third gap (l ₃ ) And the fourth gap (l ₄ ) Respectively, so that the first gap (l ₁ ) Said second gap (l ₂ ) Said third gap (l ₃ ) And the fourth gap (l ₄ ) The temperature of the liquid crystal is lower than a predetermined value,

then, at the first position, a first gap (l ₁ ) And a second gap (l) of the second position ₂ ) One of them is the maximum gap, and the other is the minimum gap, the first gap (l ₁ ) And the second gap (l ₂ ) Is adjusted to satisfy the requirement of 3,

wherein L is ₁₂ For the distance between the first position and the second position,

in the first position, a first gap (l ₁ ) And a third gap (l ₃ ) One of them is the maximum gap, and the other is the minimum gap, the first gap (l ₁ ) And the third gap (l ₃ ) Is adjusted to satisfy the requirement of 5,

wherein L is ₁₃ For the distance between the first position and the third position,

the method further includes bringing the magnet portion into close contact with a part of the substrate by a magnetic force of the magnet portion, and depositing the organic material on the substrate in a state where the position of the vapor deposition mask with respect to the substrate is fixed.

2. The method of manufacturing a display device according to claim 1, wherein:

satisfying the requirement of 4,

3. The method of manufacturing a display device according to claim 1, wherein:

satisfying the requirement of 6,

4. the method of manufacturing a display device according to claim 1, wherein:

the first gap (l ₁ ) Said second gap (l ₂ ) Said third gap (l ₃ ) And the fourth gap (l ₄ ) Each adjusted synchronously.

5. A method for manufacturing a display device, which uses a vapor deposition mask, which is a metal mask, to vapor deposit an organic material on a substrate, the method comprising:

the substrate and the vapor deposition mask are arranged such that the surfaces facing each other face a direction intersecting the vertical direction,

detecting a first gap between the substrate and the vapor deposition mask at a first position in the direction intersecting the vertical direction,

detecting a second gap between the substrate and the vapor deposition mask at a second position in the direction intersecting the vertical direction,

The device comprises n detection positions including the first position and the second position, and detects each gap between the substrate and the vapor deposition mask from the first position to the n-th position, wherein n is a natural number of 3 or more,

each gap is adjusted so that each gap is equal to or smaller than a predetermined value,

then, the first position to the nth position are adjusted simultaneously so that the difference between the maximum value and the minimum value in each gap becomes smaller,

6. The method for manufacturing a display device according to claim 5, wherein:

the first to nth positions are disposed near an end of the substrate.

7. The method for manufacturing a display device according to claim 6, wherein:

the substrate is rectangular, and all or part of the first position to the nth position are arranged at four corners of the substrate.

8. An evaporation device, comprising:

A mechanism for arranging the substrate such that the surface of the substrate faces a direction intersecting the vertical direction;

a mechanism for disposing a vapor deposition mask, which is a metal mask, opposite to the substrate;

a magnet portion disposed on the opposite side of the substrate from the vapor deposition mask so as to be spaced apart from the substrate;

detecting a first gap (l) between the substrate and the vapor deposition mask at a first position in the direction intersecting the vertical direction ₁ ) Is a first detection unit of (a);

detecting a second gap (l) between the substrate and the vapor deposition mask at a second position in the direction intersecting the vertical direction ₂ ) A second detection unit of (a);

detecting a third gap (l) between the substrate and the vapor deposition mask at a third position in the direction intersecting the vertical direction ₃ ) Is provided with a third detection part of the first detection part,

detecting a fourth gap (l) between the substrate and the vapor deposition mask at a fourth position in the direction intersecting the vertical direction ₄ ) Is provided with a fourth detection part of the first detection part,

adjusting the first gap (l ₁ ) Is provided with a first adjusting part;

adjusting the second gap (l ₂ ) A second adjusting part of (a);

adjusting the third gap (l ₃ ) A third adjusting part of (a); and

Adjusting the fourth gap (l ₄ ) Is provided with a fourth adjusting part which is used for adjusting the position of the first adjusting part,

the first, second, third and fourth adjusting portions pair the first gap (l ₁ ) Said second gap (l ₂ ) Said third gap (l ₃ ) And the fourth gap (l ₄ ) Respectively, so that the first gap (l ₁ ) Said second gap (l ₂ ) Said third gap (l ₃ ) And the fourth gap (l ₄ ) The temperature of the liquid crystal is lower than a predetermined value,

then, at the first position, a first gap (l ₁ ) And a second gap (l) of the second position ₂ ) One of them is the maximum gap, and the other is the minimum gap, the first isA gap (l) ₁ ) And the second gap (l ₂ ) Is adjusted to satisfy the requirement of 9,

in the first position, a first gap (l ₁ ) And a third gap (l ₃ ) One of them is the maximum gap, and the other is the minimum gap, the first gap (l ₁ ) And the third gap (l ₃ ) Is adjusted to satisfy the requirement of 11,

the vapor deposition device brings the magnet portion into close proximity to the substrate, brings the vapor deposition mask into contact with a part of the substrate by the magnetic force of the magnet portion, and vapor-deposits an organic material on the substrate in a state where the position of the vapor deposition mask with respect to the substrate is fixed.

9. The vapor deposition apparatus according to claim 8, wherein:

satisfying the requirement of 10,

10. the vapor deposition apparatus according to claim 8, wherein:

satisfying the requirement of 12,

11. the vapor deposition apparatus according to claim 8, wherein:

the first adjusting part, the second adjusting part, the third adjusting part and the fourth adjusting part are synchronous.

12. An evaporation device, comprising:

a mechanism for disposing a vapor deposition mask, which is a metal mask, so that a surface of the substrate and the vapor deposition mask facing each other faces a direction intersecting a vertical direction;

A first detection unit that detects a first gap between the substrate and the vapor deposition mask at a first position in the direction intersecting the vertical direction;

a second detection unit that detects a second gap between the substrate and the vapor deposition mask at a second position in the direction intersecting the vertical direction;

a first adjusting portion that adjusts the first gap; and

a second adjusting portion for adjusting the second gap,

has n detection positions including the first position and the second position, wherein n is a natural number of 3 or more,

the vapor deposition device comprises:

the first to nth detecting portions for detecting the respective gaps between the substrate and the vapor deposition mask in the first to nth gaps in the first to nth positions; and

the first to nth adjusting parts for adjusting the respective gaps respectively including the first and second adjusting parts,

the first to nth adjusting portions respectively adjust the respective gaps so that the respective gaps become equal to or smaller than a predetermined value,

13. The vapor deposition apparatus according to claim 12, wherein:

the first to nth positions are disposed near an end of the substrate.

14. The vapor deposition apparatus according to claim 13, wherein:

15. The vapor deposition apparatus according to claim 12, wherein:

the first to nth adjusting portions are provided on the vapor deposition mask side.

16. The vapor deposition apparatus according to claim 15, wherein:

the vapor deposition mask further includes a substrate-side adjusting portion for adjusting a position of the substrate on a side of the substrate opposite to the vapor deposition mask.