JP2015137389A - Film deposition apparatus and film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition apparatus which can stably maintain a desired film quality, and a film deposition method.SOLUTION: A film deposition apparatus 100 includes a mask unit 40 and an adjustment unit 60. The mask unit 40 has a transportation mechanism 42. The transportation mechanism 42 transports a mask 41 between a first position facing a substrate at a first interval G1, which is transported to a film deposition position P0, and a second position facing the substrate at a second interval G2 which is smaller than G1. The adjustment unit 60 has a reference plate 61 which holds a reference substrate S and can move to the film deposition position P0 and a detection part 62 which detects a gap between the reference substrate S transported to the film deposition position P0 and the mask 41. The adjustment unit 60 adjusts the second position according to an output of the detection part 62 such that a gap between the reference substrate S and the mask 41 becomes a predetermined reference value.

Description

  The present invention relates to a film forming apparatus and a film forming method for forming a thin film on a predetermined region of a substrate through a mask.

  As a technique for forming a thin film in a predetermined region of a substrate, a film forming mask is used. For example, Patent Document 1 discloses an in-line method for depositing vapor of a deposition material generated in a deposition source on a deposition surface while a processing substrate having a plate-like mask disposed on the deposition surface is conveyed in the deposition chamber. A membrane device is described.

JP 2010-118157 A

  In the method of forming a film while fixing the mask to the substrate, it is necessary to increase the size of the deposition mask as the size of the substrate increases. However, as the size of the mask increases, the flatness of the mask decreases, causing a variation in the gap between the substrate and the mask, which makes it difficult to obtain a desired film quality.

  Further, since it is necessary to prepare as many masks as the number of substrates to be transferred to the film formation chamber, the mask manufacturing cost increases. Furthermore, as the mask size increases, it becomes more difficult to maintain the same mask accuracy between the masks, and film formation quality tends to vary.

  In view of the circumstances as described above, an object of the present invention is to provide a film forming apparatus and a film forming method capable of stably maintaining a desired film forming quality.

In order to achieve the above object, a film formation apparatus according to an embodiment of the present invention includes a film formation chamber, an evaporation source, a transport mechanism, a mask unit, and an adjustment unit.
The evaporation source is disposed in the film formation chamber.
The transport mechanism includes a plurality of carriers each capable of holding a substrate, and sequentially transports the plurality of carriers to a film forming position facing the evaporation source.
The mask unit includes a mask and a moving mechanism. The mask is disposed between the evaporation source and the deposition position and has an opening that defines a deposition region. The moving mechanism is opposed to a first position that is opposed to the substrate transported to the film forming position with a first interval at a second interval that is smaller than the first interval. The mask is moved between the second position.
The adjustment unit includes a reference plate that holds the reference substrate and is movable to the film formation position, and a detection unit that detects a gap between the reference substrate conveyed to the film formation position and the mask. The adjustment unit adjusts the second position based on an output of the detection unit so that a gap between the reference substrate and the mask becomes a predetermined reference value.

A film forming method according to an embodiment of the present invention includes transporting a reference plate housed in a film forming chamber to a film forming position facing an evaporation source.
The mask disposed between the evaporation source and the film formation position is arranged such that the first position from the reference substrate to the first position is opposed to the reference substrate held by the reference plate at a first interval. Are moved to a second position facing each other at a second interval smaller than the second interval.
The second position is adjusted so that the gap between the mask and the reference substrate becomes a predetermined reference value.
The reference plate is retracted from the film formation position.
A plurality of carriers each holding a substrate are sequentially transferred to the film forming position, and the mask is moved from the first position to the second position each time the substrate is transferred to the film forming position. Thus, a film forming material is deposited on the substrate.

It is a schematic sectional side view which shows the film-forming apparatus which concerns on one Embodiment of this invention. It is a schematic sectional side view of the periphery of the mask unit in the said film-forming apparatus, (A) shows a mode when a mask exists in a 1st position, (B) shows a mode when a mask exists in a 2nd position Indicates. It is a schematic sectional side view which shows the mask in the said 1st position and 2nd position. It is a schematic sectional side view of the reference | standard plate in the said film-forming apparatus. It is a bottom view of the reference | standard plate which shows the holding surface holding a reference | standard board | substrate.

A film forming apparatus according to an embodiment of the present invention includes a film forming chamber, an evaporation source, a transport mechanism, a mask unit, and an adjustment unit.
The evaporation source is disposed in the film formation chamber.
The transport mechanism includes a plurality of carriers each capable of holding a substrate, and sequentially transports the plurality of carriers to a film forming position facing the evaporation source.
The mask unit includes a mask and a moving mechanism. The mask is disposed between the evaporation source and the deposition position and has an opening that defines a deposition region. The moving mechanism is opposed to a first position that is opposed to the substrate transported to the film forming position with a first interval at a second interval that is smaller than the first interval. The mask is moved between the second position.
The adjustment unit includes a reference plate that holds the reference substrate and is movable to the film formation position, and a detection unit that detects a gap between the reference substrate conveyed to the film formation position and the mask. The adjustment unit adjusts the second position based on an output of the detection unit so that a gap between the reference substrate and the mask becomes a predetermined reference value.

  In the film forming apparatus, the mask is commonly used for each of the substrates held by a plurality of carriers. The mask is disposed so as to be movable between the film formation position and the evaporation source. When the substrate is transferred to the film formation position, the mask moves from the first position to the second position, and the substrate is moved to a predetermined position. It is arranged with a gap of. When the film formation process on the substrate is completed, the mask returns from the second position to the first position, the substrate on which film formation has been completed is transported to the downstream side, and an undeposited substrate is located upstream on the film formation position. It is conveyed from. By repeating the above operation, the film forming process is sequentially performed on the substrate transported to the film forming position.

  The predetermined gap is adjusted by an adjustment unit. The gap is adjusted using a reference substrate held on a reference plate. The reference substrate typically has the same configuration as the substrate held by the carrier. In other words, in the present embodiment, before the film formation process is performed on the substrate on the carrier, the second position of the mask is adjusted using the reference substrate, and each substrate based on the adjusted second position is adjusted. Is formed.

  The detection unit for detecting the gap between the reference substrate and the mask is not particularly limited, and an electromagnetic, optical, or mechanical gap detection mechanism can be employed. Typically, the detection unit includes an electrostatic sensor. Thus, the gap can be detected with high accuracy in a non-contact manner.

  As described above, according to the film forming apparatus, since a common mask is used for a plurality of substrates, it is not necessary to prepare as many masks as the number of substrates, and the manufacturing cost of the masks can be reduced. Further, since the mask is arranged in a state separated from the substrate, the degree of freedom in designing the carrier and the mask can be improved. As a result, even a large mask can be designed with an emphasis on accuracy. Furthermore, since the position of the mask at the film formation position is adjusted by the adjustment unit, there is no need to individually adjust the gap for each substrate for film formation, thereby improving productivity. In addition, the film forming quality can be stably maintained.

The mask unit may further include an alignment mechanism that performs alignment of the mask with respect to the substrate transported to the deposition position.
Thereby, for example, even when there is a shift in the holding position of the substrate on the carrier, the thin film can be accurately formed in a predetermined region on the substrate.

The mask unit may further include a shutter mechanism that opens and closes the opening of the mask. In this case, the shutter mechanism closes the opening when the mask is in the first position, and opens the opening when the mask is in the second position.
Accordingly, diffusion of the vapor deposition material into the film formation chamber can be prevented.

The reference plate may be configured to be movable between a transport line for the plurality of carriers and a retreat position that is out of the transport line.
Thereby, the film forming process can be performed without discharging the reference plate to the outside of the apparatus. Further, it is possible to adjust the position of the mask using the reference plate while maintaining the atmosphere in the film formation chamber.

The reference plate may include a plate main body and an adhesive layer that is provided on a surface of the plate main body and removably supports the reference substrate.
Thus, the reference substrate can be easily replaced according to the type of substrate.

The plate body may be configured by combining a plurality of divided plates in a plane.
Thereby, the flatness of the plate body can be increased, and the flatness or parallelism of the reference substrate with respect to the mask can be increased.

A film forming method according to an embodiment of the present invention includes transporting a reference plate housed in a film forming chamber to a film forming position facing an evaporation source.
The mask disposed between the evaporation source and the film formation position is arranged such that the first position from the reference substrate to the first position is opposed to the reference substrate held by the reference plate at a first interval. Are moved to a second position facing each other at a second interval smaller than the second interval.
The second position is adjusted so that the gap between the mask and the reference substrate becomes a predetermined reference value.
The reference plate is retracted from the film formation position.
A plurality of carriers each holding a substrate are sequentially transferred to the film forming position, and the mask is moved from the first position to the second position each time the substrate is transferred to the film forming position. Thus, a film forming material is deposited on the substrate.

  In the film forming method, since a common mask is used for a plurality of substrates, it is not necessary to prepare as many masks as the number of substrates, and the manufacturing cost of the masks can be reduced. Further, since the mask is arranged in a state separated from the substrate, it is possible to design with an emphasis on accuracy even for a large mask. Furthermore, since the position of the mask at the film forming position is adjusted using the reference plate, it is not necessary to individually adjust the gap for each film forming substrate, thereby improving productivity. In addition, the film formation quality can be stably maintained.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic sectional side view showing a film forming apparatus according to an embodiment of the present invention. In the figure, the X-axis direction and the Y-axis direction indicate horizontal directions orthogonal to each other, and the Z-axis direction indicates a vertical direction.

[Configuration of deposition system]
The film forming apparatus 100 includes a film forming chamber 10, an evaporation source 20, a transport mechanism 30, a mask unit 40, and a controller 50.

(Deposition room)
The film forming chamber 10 is connected to a vacuum pump 102 via an exhaust valve 101, and has a sealed structure in which the inside can be reduced or maintained at a predetermined vacuum pressure.

  The film forming apparatus 100 is configured as an in-line vacuum film forming apparatus including a plurality of processing chambers. The film forming chamber 10 constitutes a part of the processing chamber. The film forming chamber 10 is connected to the upstream processing chamber 11 via the gate valve V1, and is connected to the downstream processing chamber 12 via the gate valve V2. The processing chambers 11 and 12 may be configured by heating chambers, cooling chambers, film forming chambers, or the like, or may be configured by processing chambers that do not involve vacuum processing such as load lock chambers and load / unloading chambers. .

(Evaporation source)
The evaporation source 20 is disposed in the film forming chamber 10. The evaporation source 20 is disposed substantially at the center of the bottom of the film forming chamber 10 and generates vapor of a vapor deposition material to be vapor deposited on the substrate W transported to the film forming position. The vapor of the vapor deposition material is released toward the substrate W transported to the film forming position P0 at a predetermined solid angle centered on the axis 20T orthogonal to the transport line 30T of the substrate W.

  The evaporation source 20 includes a container (crucible) that stores a vapor deposition material and a heating source that heats the vapor deposition material. The vapor deposition material is not particularly limited, and an inorganic material such as metal or an organic material such as resin is used. As the heating source, a resistance heating source, an induction heating source, an electron beam heating source, or the like is used. The evaporation source 20 is controlled by the controller 50.

(Transport mechanism)
The transport mechanism 30 includes a plurality of carriers 31 each capable of holding the substrate W, and sequentially transports the plurality of carriers to the film forming position P0 facing the evaporation source 20.

  The transport mechanism 30 includes a transport rail 32 that transports a plurality of carriers 31 along a linear transport line 30 </ b> T parallel to the Y-axis direction in the film forming chamber 10. Instead of the transport rail 32, other transport means such as a transport conveyor may be employed.

  In the present embodiment, the transport rail 32 sequentially and intermittently transports the carrier 31 in the film forming chamber 10 to the transport position P1, the film forming position P0, and the transport position P2. The transfer position P1 is a position where the carrier 31 transferred from the processing chamber 11 via the gate valve V1 and transferred to the film forming position P0 in the next step stands by. On the other hand, the transfer position P2 is a position where the substrate W that has been subjected to the film forming process is held, and the carrier that is transferred to the processing chamber 12 through the gate valve V2 in the next step stands by. The transfer positions (stop positions) on the transfer line 30T are not limited to the above three locations, and a larger number of positions may be set upstream or downstream of the film formation position P0.

  Each of the plurality of carriers 31 is transported at a predetermined interval with the substrate W held downward. Each carrier 31 has the same configuration, and is typically composed of a plate-like member made of metal or synthetic resin such as a tray.

  The substrate W is configured by a rectangular glass substrate in the present embodiment, but is not limited thereto, and may be configured by various base materials such as a semiconductor substrate and a resin film. The substrate W has a film formation surface, and is held on the lower surface of the carrier 31 so that the film formation surface faces the bottom of the film formation chamber 10.

  As described above, the film formation position P0 is set to a predetermined position on the transfer line 30T facing the evaporation source 20. Specifically, it refers to the position where the vapor of the vapor deposition material released from the evaporation source 20 reaches the entire film formation surface of the substrate W. In this embodiment, the intersection of the transfer line 30T and the axis 20T of the evaporation source 20 The position where the center part in the conveyance direction of the board | substrate W corresponds is said.

  The transport mechanism 30 stops the transport operation when the carrier 31 reaches the film formation position P0, and restarts the transport operation after the film formation on the substrate W on the carrier 31 is completed. The operation of the transport mechanism 30 is controlled by the controller 50.

(Mask unit)
The mask unit 40 includes a mask 41 and a moving mechanism 42. 2A and 2B are schematic side sectional views of the periphery of the mask unit 40. FIG.

  The mask 41 is disposed between the evaporation source 20 and the film formation position facing the evaporation source 20. The mask 41 is composed of a rectangular plate-shaped member having a predetermined thickness, and has an opening 41 a that defines a film formation region on the substrate W. The shape of the opening 41a is not particularly limited, and is typically formed in a rectangular shape.

  The moving mechanism 42 is configured to support the lower surface of the mask 41 and to move the mask 41 in a direction parallel to the Z-axis direction. The moving mechanism 42 is disposed between the mask 41 and the evaporation source 20 and has an opening 42 a through which vapor discharged from the evaporation source 20 can pass.

  The moving mechanism 42 moves (lifts) the mask 41 between the first position shown in FIG. 2A and the second position shown in FIG. The first position corresponds to the height position of the mask 41 facing the substrate W transferred to the film forming position P0 with a first gap G1, and the second position is the first position from the substrate W. This corresponds to the height position of the mask 41 facing with a second gap G2 smaller than the gap G1.

  The size of the gaps G1 and G2 is not particularly limited. For example, the size of the gap G1 is set to several mm to several tens of cm, and the size of the gap G2 is set to several μm to several mm. In particular, the gap G2 is appropriately set according to the type of the substrate W, the film forming material, the required film forming quality, and the like.

  The moving mechanism 42 has a driving source such as a motor or a linear cylinder, and is controlled by the controller 50. The driving source may be installed inside the film forming chamber 10 or may be installed outside the film forming chamber 10.

  The mask unit 40 further includes a plurality of cameras 43. Each camera 43 is disposed at a predetermined position between the evaporation source 20 and the mask 41, and indicates a relative positional relationship in a horizontal plane (XY plane) between the substrate W and the mask 41 transferred to the film forming position P0. An image for determination is acquired.

  The arrangement position of each camera 43 is not particularly limited, and is typically arranged at an appropriate position that does not hinder the arrival of vapor from the evaporation source 20 to the substrate W on the film formation position P0. For example, each camera 43 is provided at a position where the four corners of the opening 41a of the mask 41 and the substrate W on the film formation position P0 can be imaged. Or each camera 43 is each provided in the position which can image two corners which are the diagonal relationship of the opening part 41a of the mask 41, and the said board | substrate W, respectively.

  An image captured by each camera 43 is output to the controller 50. The controller 50 is configured to determine the relative positional relationship in the horizontal plane between the substrate W transferred to the film formation position P0 and the mask 41 based on the output of each camera 43. Then, when the relative positional relationship between the substrate W and the mask 41 is not within a predetermined allowable range, the controller 50 outputs a control signal for moving the mask 41 in the horizontal direction to the moving mechanism 42. Specifically, the controller 50 moves the mask 41 in the X axis direction, the Y axis direction, or the rotation direction around the Z axis so that the relative positional relationship of the mask 41 with respect to the substrate W falls within the allowable range. Configured.

  As described above, the moving mechanism 42, the plurality of cameras 43, and the controller 50 constitute an alignment mechanism that performs alignment of the mask 41 with respect to the substrate W transported to the film forming position P0. Thereby, for example, even when there is a shift in the holding position of the substrate W on the carrier 31, it is possible to form a thin film with high accuracy in a predetermined region on the substrate W.

(Adjustment unit)
3A and 3B are schematic side sectional views showing the mask 41 in the first position and the second position, respectively.

  The film forming apparatus 100 further includes an adjustment unit 60. The adjustment unit 60 includes a reference plate 61 and a detection unit 62. The adjustment unit 60 is for adjusting the second position of the mask 41.

  The reference plate 61 is configured to hold the reference substrate S and be movable to the film formation position P0. The reference substrate S is typically configured with the same shape and thickness as the substrate W held on the carrier 31. The reference plate 61 typically has a configuration similar to that of the carrier 31 and is configured to be movable along the transport line 30T by the transport rail 32.

  The reference plate 61 has a holding surface 610 that holds the reference substrate S. The holding surface 610 holds the reference substrate S so as to have the same height as the substrate W held by the carrier 31 at the film formation position P0. More specifically, the deposition surface of the substrate W held by the carrier 31 transported to the deposition position P0 and the lower surface of the reference substrate S held by the reference plate 61 transported to the deposition position P0 are the same height. Thus, the reference plate 61 is configured.

  The detection unit 62 is a sensor that detects a gap between the reference substrate S transported to the film formation position P0 and the mask 41, and is configured by an electrostatic sensor in this embodiment. The arrangement position of the detection unit 62 is not particularly limited. In the present embodiment, the detection unit 62 is arranged on the upper surface portion of the mask 41 facing the reference substrate S transferred to the film formation position P0.

  As shown in FIG. 3B, the detection unit 62 detects a capacitance corresponding to a gap between the mask 41 raised to the second position and the reference substrate S transported to the film formation position P0. The output of the detection unit 62 is supplied to the controller 50, and the controller 50 is configured to calculate the gap between the mask 41 and the reference substrate S based on the output of the detection unit 62. The controller 50 is configured to drive the moving mechanism 42 so that the gap has a predetermined reference value (the interval G2 in this example).

  As described above, the adjustment unit 60 for adjusting the second position of the mask 41 is configured by the reference plate 61, the reference substrate S, the detection unit 62, and the controller 50.

  The reference substrate S is not necessarily formed of a conductive substrate. For example, the reference substrate S may be an insulating substrate in which a conductor layer is formed at a position facing the detection unit 62. Moreover, the detection part 62 is not restricted to being comprised with an electrostatic sensor, You may comprise with other non-contact sensors, such as an optical sensor. Furthermore, the detection part 62 is not restricted to the example arrange | positioned in the upper surface part of the mask 41, For example, you may arrange | position to the upper surface of the moving mechanism 42 which supports the mask 41. FIG. Thereby, the reference height of the mask 41 with respect to the reference substrate S can be made constant regardless of the type of the mask 41.

  As shown in FIG. 1, the reference plate 61 is configured to be movable between a transport line 30 </ b> T of the plurality of carriers 31 and a retracted position Pw deviated from the transport line 30 </ b> T. Thereby, the film forming process can be performed without discharging the reference plate 61 to the outside of the film forming apparatus 100. In addition, the position of the mask using the reference plate 61 can be adjusted while maintaining the atmosphere in the film forming chamber 10.

  The retreat position Pw is set at an arbitrary position inside the film forming chamber 10. The retreat position Pw is not particularly limited, and may be set immediately above the transport line 30T or may be disposed on the same horizontal plane as the transport line 30T.

  The movement of the reference plate 61 between the transfer line 30T and the retreat position Pw may be performed using the transfer mechanism 30 or using a mechanism different from the transfer mechanism 30 installed in the film forming chamber 10. It may be done.

(Reference plate)
Next, details of the configuration of the reference plate 61 will be described. 4 is a schematic sectional side view of the reference plate 61, and FIG. 5 is a bottom view of the reference plate 61 showing a holding surface 610 for holding the reference substrate S. As shown in FIG.

  The reference plate 61 includes a base member 611, a plate body 612, and an adhesive layer 613.

  The base member 611 is constituted by a frame or plate member made of, for example, metal or synthetic resin. The plate body 612 is composed of a plurality of divided plates, and in the present embodiment, is composed of eight divided plates 612a, 612b, 612c, 612d, 612e, 612f, 612g, 612h. Each of the divided plates 612a to 612h is fixed to one surface of the base member 611, and is combined in the same plane to form one rectangular holding surface 610 as a whole.

  Each of the divided plates 612a to 612h has the same configuration, and is constituted by a metal rectangular plate member. Each of the divided plates 612a to 612h is fixed to the surface of the base member 611 using a plurality of fasteners (not shown). These fasteners are configured to penetrate each of the divided plates 612a to 612h in the thickness direction and adjust the height and inclination of each of the divided plates 612a to 612h according to the tightening amount. As a result, the flatness of the holding surface 610 can be adjusted with high accuracy (for example, the maximum displacement in the Z-axis direction within the plane is several μm to several tens μm).

  The number of divisions of the plate body 612 is not limited to the above example, and can be set as appropriate according to the size of the reference substrate S and the required flatness. For example, the desired flatness can be easily realized by increasing the number of divisions as the area of the reference substrate S increases.

  The adhesive layer 613 is provided on the surface (holding surface 610) of the plate body 612 and is made of an adhesive material that can removably support the reference substrate S. In the present embodiment, the adhesive layer 613 is configured by a plurality of dot-like patterns distributed regularly or irregularly on the holding surface 610. However, the adhesive layer 613 may be formed of a solid layer formed on the holding surface 610.

  As the adhesive material constituting the adhesive layer 613, a material that can be used in a vacuum and has little deterioration in adhesiveness even when the reference substrate S is repeatedly replaced is preferably used. Thereby, a common reference plate 61 can be used for a plurality of different types of reference substrates.

(Shutter mechanism)
The film forming apparatus 100 further includes a shutter mechanism 70. The shutter mechanism 70 includes a shutter plate 71, a rotating shaft 72, and a drive motor (not shown) connected to the rotating shaft 72. The drive of the drive motor is controlled by the controller 50.

  The shutter mechanism 70 has a shielding position (FIG. 2A) that shields between the evaporation source 20 and the opening 41a of the mask 41, and an open position (FIG. 2) that opens between the evaporation source 20 and the opening 41a. (B)), the shutter plate 71 can be rotated.

  The shutter mechanism 70 has a function of opening and closing the opening 41a of the mask 41 when viewed from the substrate W transferred to the film forming position P0. In the present embodiment, the shutter mechanism 70 closes the opening 41a when the mask 41 is in the first position (FIG. 2A), and the mask 41 is in the second position (FIG. 2B). It is controlled by the controller 50 to open the opening 41a at a certain time. Thereby, when the mask 41 is waiting at the first position or when the alignment of the mask 41 is performed, it is possible to prevent the vapor deposition material from diffusing into the film forming chamber.

  The controller 50 is typically configured by a computer and is disposed outside the film forming chamber 10. The controller 50 controls the overall operation of the film forming apparatus 100 including the evaporation source 20, the transport mechanism 30, the mask unit 40, and the adjustment unit 60.

[Film formation method]
Next, the film forming method according to the present embodiment will be described. First, a typical operation of the film forming apparatus 100 will be described.

(Typical operation of deposition equipment)
In the film forming apparatus 100 of this embodiment, the mask 41 is used in common for each of the substrates W held by the plurality of carriers 31. When the substrate W is transferred to the film forming position P0, the mask unit 40 performs alignment of the mask 41 with respect to the substrate W transferred to the film forming position P0 based on the outputs of the plurality of cameras 43 as described above. .

  The alignment of the mask 41 is performed at the first position shown in FIG. When the mask 41 is in the first position, since the opening 41a of the mask 41 is shielded by the shutter plate, the vapor of the vapor deposition material reaches the substrate W on the film formation position P0 during the alignment of the mask 41. That is blocked.

  After completing the alignment, the mask unit 40 raises the mask 41 from the first position to the second position, and disposes the mask 41 on the substrate W with a predetermined gap G2. Then, the opening 41 a of the mask 41 is opened by the shutter mechanism 70, and vapor of the vapor deposition material released from the evaporation source 20 is deposited on the film formation surface of the substrate W.

  When the film forming process on the substrate W is completed, the opening 41 a of the mask 41 is closed by the shutter mechanism 70. Then, the mask unit 40 lowers the mask 41 from the second position to the first position. The substrate W on which film formation has been completed is transferred to the downstream transfer position P1, and the non-film-formed substrate W is transferred from the upstream transfer position P2 to the film formation position P0.

  By repeating the above operation, the film forming process is sequentially performed on the substrate W transported to the film forming position P0.

(Adjustment process)
Since the gap G2 between the substrate W and the mask 41 at the second position affects the film forming quality on the substrate W, it is necessary to adjust the gap G2 with high accuracy. Further, if it is attempted to sequentially adjust the gap of the mask 41 with respect to each substrate, the time required for the film forming process becomes long, and there is a possibility that the productivity is lowered. Therefore, in this embodiment, before the film forming process is performed on the substrate W on the carrier 31, the second position of the mask 41 is adjusted using the reference substrate S, and each substrate based on the adjusted mask position is used. A film forming process for W is performed.

  In the film forming method of the present embodiment, first, the reference plate 61 accommodated in the film forming chamber 10 is transported to the film forming position P0. In the present embodiment, the reference plate 61 holding the reference substrate S is transferred from the retracted position Pw to the film forming position P0 via the transfer line 30T. The reference substrate S is held in the film forming chamber 10 at the same height position as the substrate W on the carrier 31 transported along the transport line 30T.

  Subsequently, the mask unit 40 moves the mask 41 from the first position (FIG. 3A) facing the reference substrate S held by the reference plate 61 with a first gap G1. To a second position (FIG. 3B) facing each other with a second gap G2.

  Next, the second position is adjusted so that the gap between the mask 41 and the reference substrate S becomes a predetermined reference value. The gap is detected using a detector 62 installed on the mask 41. In the present embodiment, the controller 50 adjusts the height position of the mask 41 via the moving mechanism 42 based on the output of the detection unit 62 so that the gap matches a predetermined reference value (the interval G2 in this example). To do.

  According to this embodiment, since the holding surface 610 of the reference plate 61 is configured by combining the plurality of divided plates 612a to 612h, the reference substrate S can be held with a predetermined flatness. As a result, the gap with the mask 41 at the second position can be made uniform over the entire surface of the reference substrate S, so that the gap can be adjusted with high accuracy.

  Note that the controller 50 controls the shutter mechanism 70 so that the opening 41a of the mask 41 is always closed by the shutter plate 71 in the adjustment process. This prevents the deposition of the vapor deposition material on the reference substrate S. Instead of this, the controller 50 may control the evaporation source 20 so as to stop the release of vapor of the vapor deposition material in the adjustment step.

  The adjustment process is typically performed before the start of continuous film formation such as when the operation of the film formation apparatus 100 is started or when maintenance of the film formation apparatus 100 is completed. In this case, the adjustment process may be performed automatically by the controller 50 or may be performed through an operator input operation on the controller 50.

(Film formation process)
After the adjustment process is completed, a film forming process is performed on the substrate W on each carrier 31. As described above, the second position of the mask 41 is adjusted because the second gap G2 is adjusted based on the reference substrate S held at the same height position as the substrate W on each carrier 31. The mask 41 can be opposed to the substrate W transferred to the position P0 with the same gap (interval G2). Therefore, in the present embodiment, the film forming process is performed as follows.

  First, the reference plate 61 is moved from the film forming position P0 to the retracted position Pw. On the other hand, the mask 41 is moved from the adjusted second position to the first position. Then, the carrier 31 holding the substrate W is transported from the upstream transport position P2 to the film forming position P0. The carrier 31 is transported to the film forming position P0 while the reference plate 61 is moved to the retracted position Pw, but may be performed after the reference plate 61 is moved to the retracted position Pw.

  Subsequently, the mask unit 40 performs alignment of the mask 41 with the substrate W on the carrier 31 transported to the film forming position P0. Then, the mask 41 is lifted from the first position to the second position adjusted as described above, and the opening 41a of the mask 41 is opened by the shutter mechanism 70, so that the film forming process for the substrate W is performed. Is done.

  Thereafter, the plurality of carriers 31 each holding the substrate W are sequentially transferred to the film forming position P0, and each time the substrate W is transferred to the film forming position P0, the mask 41 is moved from the first position to the second position. The film forming material is deposited on the substrate W by being moved to the position.

  As described above, according to the present embodiment, since a common mask 41 is used for a plurality of substrates W, it is not necessary to prepare as many masks as the number of substrates W, and the mask manufacturing cost can be reduced. . In addition, since the mask 41 is arranged in a state separated from the substrate W, it is possible to design with an emphasis on accuracy even with a large mask.

  Furthermore, according to the present embodiment, since the position of the mask 41 at the film formation position P0 is adjusted by the adjustment unit 60 including the reference plate 61, the gap is individually adjusted for each film formation substrate W. There is no need. As a result, productivity can be improved and the film formation quality can be stably maintained.

  Note that the controller 50 is not limited to the above example, and the controller 50 raises the mask 41 and the substrate raised to the second position each time the deposition substrate W is transported to the deposition position P0 based on the output of the detection unit 62. It may be configured to confirm the gap G2 with W. Thus, accurate gap adjustment can always be performed for each substrate W transported to the film forming position P0.

  Furthermore, since the reference plate 61 is always waiting in the film forming chamber 10, the film forming process can be performed without discharging the reference plate 61 to the outside of the apparatus. Further, the position of the mask 41 using the reference plate 61 can be adjusted while maintaining the atmosphere in the film forming chamber 10.

  The embodiment of the present invention has been described above, but the present invention is not limited to the above-described embodiment, and it is needless to say that various modifications can be made without departing from the gist of the present invention.

  For example, in the above embodiment, the film forming apparatus for forming a predetermined vapor deposition material on the substrate W has been described as an example. However, the film forming surface of the substrate W is not particularly limited, and may be a flat surface. It may be a structure surface having irregularities. In addition, various functional layers such as an insulating layer and a conductor layer or a resist pattern may be provided in advance on the film formation surface.

  Moreover, in the above embodiment, although the alignment of the mask 41 with respect to the board | substrate W was implemented in the 1st position, it may replace with this and may be implemented in a 2nd position. In this case, the shutter mechanism 70 is controlled to open the opening 41a of the mask 41 after the alignment is completed.

DESCRIPTION OF SYMBOLS 10 ... Film formation chamber 20 ... Evaporation source 30 ... Conveyance mechanism 31 ... Carrier 32 ... Conveyance rail 40 ... Mask unit 41 ... Mask 42 ... Movement mechanism 43 ... Camera 50 ... Controller 60 ... Adjustment unit 61 ... Reference plate 62 ... Detection part 70 ... Shutter mechanism 100 ... Film formation apparatus 612 ... Plate body 612a to 612h ... Dividing plate 613 ... Adhesive layer S ... Reference substrate W ... Substrate P0 ... Film formation position Pw ... Retraction position

Claims (8)

A deposition chamber;
An evaporation source disposed in the film forming chamber;
A plurality of carriers each capable of holding a substrate, and a transport mechanism that sequentially transports the plurality of carriers to a deposition position facing the evaporation source;
A mask that is disposed between the evaporation source and the film formation position and has an opening that defines a film formation region, and a first position that is opposed to the substrate transported to the film formation position with a first interval. And a moving mechanism capable of moving the mask between the substrate and a second position facing each other at a second interval smaller than the first interval, and a mask unit,
A reference plate that holds the reference substrate and is movable to the film formation position; and a detection unit that detects a gap between the reference substrate and the mask that is transported to the film formation position. And an adjustment unit that adjusts the second position so that a gap between the reference substrate and the mask becomes a predetermined reference value. The film forming apparatus according to claim 1,
The mask unit further includes an alignment mechanism that performs alignment of the mask with respect to the substrate transported to the deposition position. The film forming apparatus according to claim 1 or 2,
The detection unit includes a film forming apparatus including an electrostatic sensor. It is the film-forming apparatus of any one of Claims 1-3,
The mask unit further includes a shutter mechanism for opening and closing the opening of the mask,
The shutter mechanism closes the opening when the mask is in the first position, and opens the opening when the mask is in the second position. It is the film-forming apparatus of any one of Claims 1-4,
The reference plate is configured to be movable between a transfer line of the plurality of carriers and a retreat position that is out of the transfer line. It is the film-forming apparatus of any one of Claims 1-5,
The reference plate is
The plate body,
An adhesive layer provided on a surface of the plate body and detachably supporting the reference substrate; The film forming apparatus according to claim 6,
The plate body is formed by combining a plurality of divided plates in a plane. Transport the reference plate housed in the deposition chamber to the deposition position facing the evaporation source,
A mask disposed between the evaporation source and the film formation position is moved from the reference substrate to the first position facing the first substrate from the reference substrate held by the reference plate at a first interval. Moved to a second position facing each other at a second interval smaller than the interval,
Adjusting the second position so that a gap between the mask and the reference substrate becomes a predetermined reference value;
Retreating the reference plate from the deposition position;
A plurality of carriers each holding a substrate are sequentially transferred to the film forming position, and each time the substrate is transferred to the film forming position, the mask is moved from the first position to the second position. A film forming method of depositing a film forming material on the substrate.

Images