KR20210028792A - home port and substrate processing apparatus having the same - Google Patents

Abstract

The present invention provides a substrate processing device. According to the present invention, the substrate processing device includes: a support unit for supporting a substrate; a container surrounding the support unit and recovering a treatment liquid; a processing liquid supply unit including a nozzle for supplying the treatment liquid to the substrate supported by the support unit; and a standby port disposed on one side of the container and in which the nozzle waits when the substrate is not processed. The standby port includes: a body including an inner space having an open-top so that the treatment liquid discharged from the nozzle is introduced; a drain line connected to the body and discharging the liquid in the inner space; and a filter installed on a drain port of the body connected to the drain line and installed so that an edge is spaced apart from the inner surface of the drain port, thereby minimizing the generation of fumes by allowing the treatment liquid to be drained quickly.

Description

A home port and a substrate processing apparatus having the same

The present invention relates to a waiting port for a nozzle to wait and a substrate processing apparatus having the same, and more specifically, a home port capable of minimizing fume generated when a processing liquid is discharged from the nozzle, and a substrate processing having the same It relates to the device.

In general, contaminants such as particles, organic contaminants, and metal contaminants remaining on the surface of a substrate have a great influence on device characteristics and production yield. For this reason, a cleaning process that removes various contaminants or unnecessary films adhering to the surface of the substrate has emerged as very important in the semiconductor manufacturing process, and a process of cleaning the substrate is carried out in steps before and after each unit process of manufacturing a semiconductor. .

Currently, the cleaning method used in the semiconductor manufacturing process is largely divided into dry cleaning and wet cleaning, and wet cleaning is a bath that removes contaminants by immersing the substrate in a chemical solution and chemical dissolution. It is divided into a type and a sheet-fed type in which contaminants are removed by placing a substrate on a spin chuck and supplying a chemical solution to the surface of the substrate while rotating the substrate.

In the single-leaf type cleaning apparatus, various types of cleaning liquids are used depending on the kind of contaminants and film quality to be removed from the substrate, and the cleaning liquid is selectively provided to the substrate by a nozzle.

1 shows an example of a general cleaning apparatus. The processing liquid is supplied to the substrate W through the nozzle 1. When the substrate W is not processed, the nozzle 1 waits at the home port 3.

When the nozzle 1 is in the air at the home port 3, to maintain the temperature of the treatment liquid or prevent contamination inside the nozzle 1, the treatment liquid is discharged from the nozzle 1 before the process proceeds or at predetermined time intervals.

When the treatment liquid is discharged, congestion is generated due to the mesh-type strainer installed in the home port, and fumes are generated, and these fumes are diffused into the chamber as shown in FIGS. 2A and 2B, and ultimately, the substrate W Contaminate.

Republic of Korea Patent Publication No. 10-2011-0116471 (2011.10.26)

An object of the present invention is to provide a home port capable of minimizing fume generation by rapidly draining the treatment liquid when discharging the treatment liquid remaining in the nozzle to the standby port, and a substrate treatment apparatus having the same.

The problem to be solved by the present invention is not limited thereto, and other problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, a support unit for supporting a substrate; A container surrounding the support unit and recovering a treatment liquid; A processing liquid supply unit including a nozzle for supplying a processing liquid to the substrate supported by the support unit; It is disposed on one side of the container, and when the substrate is not processed, a standby port for the nozzle to wait; includes, and the standby port includes an inner space whose upper portion is opened so that the processing liquid discharged from the nozzle flows in. The body; A drain line connected to the body and discharging the liquid in the inner space; And a filter installed on the drain hole of the body connected to the drain line, and installed so that the edge is spaced apart from the inner surface of the drain hole.

In addition, the filter may have a crater shape in cross section, a plurality of side drain holes may be formed on a curved side, and floor drain holes may be formed on a bottom surface.

In addition, the filter may further include gap maintaining protrusions protruding from the outer surface.

In addition, the gap maintaining protrusions may be supported on the inner surface of the drain hole.

In addition, the side drain hole may be formed in a direction perpendicular to the side surface radially along a circumferential direction toward the center of the filter.

In addition, the side drain hole may be formed to be curved in a spiral shape on the side surface radially along the circumferential direction of the center of the filter.

In addition, the filter may have a tapered shape that has a wide inlet side through which the treatment liquid is introduced and narrows downward.

In addition, the edge of the filter may be spaced 0.1 ~ 0.5mm from the inner surface of the drain.

According to another aspect of the present invention, in a home port in which a nozzle for supplying a processing liquid to a substrate stands by and for discharging the processing liquid discharged by the nozzle to the outside, the nozzle has a body having a discharge space for discharging the processing liquid ; A drain line connected to the body; And a filter installed on the drain hole of the body connected to the drain line and installed so that the edge is spaced apart from the inner surface of the drain hole may be provided.

In addition, the filter may have a crater shape having a curved side surface and a flat bottom surface, a plurality of side drain holes may be formed on the curved side surface, and floor drain holes may be formed on the flat bottom surface.

In addition, the filter may further include gap maintaining protrusions protruding from the outer surface.

In addition, the gap maintaining protrusions may be supported on the inner surface of the drain hole.

In addition, the side drain hole may be formed in a direction perpendicular to the side surface radially along a circumferential direction toward the center of the filter.

In addition, the side drain hole may be formed to be curved in a spiral shape along the circumferential direction around the center of the filter so that the treatment liquid is drained smoothly by generating a vortex when the treatment liquid is drained.

In addition, the filter may include guide protrusions which are formed to protrude between the side drain holes and have the same spiral shape as the shape of the side drain holes.

In addition, the filter may have a tapered shape that has a wide inlet side through which the treatment liquid is introduced and narrows downward.

According to an embodiment of the present invention, when the treatment liquid discharged from the nozzle is drained from the home port, it has a special effect of minimizing the generation of fume by preventing stagnation of the treatment liquid through rapid drainage.

The effects of the present invention are not limited to the above-described effects, and effects that are not mentioned will be clearly understood by those of ordinary skill in the art from the present specification and the accompanying drawings.

1 is a plan view schematically showing a substrate processing system of the present invention.
2 is a plan view showing the configuration of a single wafer substrate processing apparatus according to the present invention.
3 is a side view showing the configuration of the substrate processing apparatus shown in FIG. 2.
FIG. 4 is a side cross-sectional view showing a configuration of a processing liquid injection unit in the substrate processing apparatus shown in FIG. 2.
5 is a view showing a first swing nozzle unit and a home port.
6 is a cross-sectional view of a home port.
7 is a cross-sectional view of a home port.
8 is a plan view of a home port.
9 is a perspective view of the filter.
10 is a diagram showing another example of a filter.
11 is a diagram showing another example of a filter.
12 is a schematic cross-sectional view of a general liquid treatment apparatus.
13A and 13B are views showing a flow state of fumes generated from a treatment liquid in the liquid treatment apparatus of FIG. 12.

In the present invention, various transformations may be applied and various embodiments may be provided, and specific embodiments will be illustrated in the drawings and will be described in detail in the detailed description. However, this is not intended to limit the present invention to a specific embodiment, it should be understood to include all conversions, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, when it is determined that a detailed description of a related known technology may obscure the subject matter of the present invention, a detailed description thereof will be omitted.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features. It is to be understood that the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof does not preclude in advance.

Terms such as first and second may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another component.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, identical or corresponding components are assigned the same reference numerals, and duplicated Description will be omitted.

1 is a plan view schematically showing a substrate processing system of the present invention.

Referring to FIG. 1, the substrate processing system 1000 of the present invention may include an index unit 10 and a process processing unit 20. The index unit 10 and the process processing unit 20 are arranged in a line. Hereinafter, the direction in which the index unit 10 and the process processing unit 20 are arranged is referred to as the first direction (1), and when viewed from above, the direction perpendicular to the first direction (1) is referred to as the second direction (2). It is referred to as this, and a direction perpendicular to the plane including the first direction (1) and the second direction (2) is defined as the third direction (3).

The index portion 10 is disposed in front of the first direction 1 of the substrate processing system 1000. The index unit 10 includes a load port 12 and a transfer frame 14.

The carrier 11 in which the substrate W is accommodated is mounted on the load port 12. A plurality of load ports 12 are provided and they are arranged in a row along the second direction 2. The number of load ports 12 may increase or decrease according to process efficiency and footprint conditions of the substrate processing apparatus 1000. As the carrier 11, a front opening unified pod (FOUP) may be used. The carrier 11 is formed with a plurality of slots for receiving the substrates horizontally with respect to the ground.

The transfer frame 14 is disposed in a first direction adjacent to the load port 12. The transfer frame 14 is disposed between the load port 12 and the buffer unit 30 of the process processing unit 20. The transfer frame 14 includes an index rail 15 and an index robot 17. The index robot 17 is mounted on the index rail 15. The index robot 17 transfers the substrate W between the buffer unit 30 and the carrier 11. The index robot 17 linearly moves in the second direction along the index rail 210 or rotates in the third direction 3 as an axis.

The process processing unit 20 is disposed at the rear of the substrate processing system 1000 along the first direction 1 adjacent to the index unit 10. The process processing unit 20 includes a buffer unit 30, a moving passage 40, a main transfer robot 50, and a substrate processing apparatus 60.

The buffer unit 30 is disposed in front of the process processing unit 20 along the first direction (1). The buffer unit 30 is a place where the substrate W is temporarily accommodated and waited before the substrate W is transferred between the substrate processing apparatus 60 and the carrier 11. The buffer unit 30 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are provided to be spaced apart from each other along the third direction 3.

The moving passage 40 is disposed to correspond to the buffer unit 30. The moving passages 40 are arranged in a longitudinal direction parallel to the first direction 1. The movement passage 40 provides a passage through which the main transfer robot 50 moves. On both sides of the moving passage 40, the substrate processing apparatuses 60 face each other and are disposed along the first direction 1. In the moving passage 40, the main transfer robot 50 moves along the first direction 1, and a moving rail that can move up and down the upper and lower layers of the substrate processing apparatus 60 and the upper and lower layers of the buffer unit 30 Is installed.

The main transfer robot 50 is installed in the movement passage 40 and transfers the substrate W between the substrate processing apparatus 60 and the buffer unit 30 or between the substrate processing apparatuses 60. The main transfer robot 50 linearly moves in the second direction 2 along the movement passage 400 or rotates in the third direction 3 as an axis.

A plurality of substrate processing apparatuses 60 are provided, and are disposed on both sides of the moving passage 30 along the second direction 2. Some of the substrate processing apparatuses 60 are disposed along the length direction of the moving passage 30. In addition, some of the substrate processing apparatuses 60 are disposed to be stacked on each other. That is, the substrate processing apparatuses 60 may be arranged in an A X B arrangement on one side of the moving passage 30. Here, A is the number of substrate processing apparatuses 60 provided in a row along the first direction (1), and B is the number of substrate processing apparatuses 60 provided in a row along the second direction (2). When four or six substrate processing apparatuses 60 are provided on one side of the moving passage 30, the substrate processing apparatuses 60 may be arranged in an arrangement of 2 X 2 or 3 X 2. The number of substrate processing apparatuses 60 may increase or decrease. Unlike the above, the substrate processing apparatus 60 may be provided only on one side of the moving passage 30. In addition, unlike the above, the substrate processing apparatus 60 may be provided in a single layer on one side and both sides of the moving passage 30.

The substrate processing apparatus 60 may perform a cleaning process on the substrate W. The substrate processing apparatus 60 may have a different structure depending on the type of cleaning process to be performed. Unlike this, each of the substrate processing apparatuses 60 may have the same structure. Optionally, the substrate processing apparatuses 60 are divided into a plurality of groups, and the substrate processing apparatuses 60 belonging to the same group are the same, and the structures of the substrate processing apparatuses 60 belonging to different groups may be provided differently from each other. I can. For example, when the substrate processing apparatus 60 is divided into two groups, a first group of substrate processing apparatuses 60 are provided on one side of the transfer chamber 240, and a second group is provided on the other side of the transfer chamber 240. Substrate processing apparatuses 60 of may be provided. Optionally, on both sides of the transfer chamber 240, a first group of substrate processing apparatuses 60 may be provided on a lower layer, and a second group of substrate processing apparatuses 60 may be provided on an upper layer. The substrate processing apparatuses 60 of the first group and the substrate processing apparatuses 60 of the second group may be classified according to the type of chemical used or the type of cleaning method, respectively. Alternatively, the substrate processing apparatus 60 of the first group and the substrate processing apparatus 60 of the second group may be provided to sequentially perform processes on one substrate W.

FIG. 2 is a plan view showing the configuration of a single wafer substrate processing apparatus according to the present invention, and FIG. 3 is a cross-sectional view illustrating a processing container and a substrate support member in the substrate processing apparatus shown in FIG. 2.

In the present embodiment, a semiconductor substrate is illustrated and described as an example as a substrate processed by the single wafer substrate processing apparatus 1, but the present invention is not limited thereto, and may be applied to various types of substrates such as a liquid crystal display device and a glass substrate. .

2 to 3, the substrate processing apparatus 1 according to the present invention is an apparatus for removing foreign substances and films remaining on the substrate surface by using various processing fluids, and the chamber 800 and the processing vessel 100 , A substrate support member 200, a first swing nozzle unit 300, a fixed nozzle 500, a second swing nozzle unit 700, and an exhaust member 400.

The chamber 800 provides an enclosed inner space, and a fan filter unit 812 is installed on the upper side. The fan filter unit 812 generates vertical airflow in the chamber 800.

The fan filter unit 812 is a device in which a filter and an air supply fan are modularized into one unit, and is a device that filters clean air and supplies it into the chamber. Clean air passes through the fan filter unit 812 and is supplied into the chamber to form a vertical airflow. This vertical airflow of air provides a uniform airflow over the substrate, and pollutants (fumes) generated in the process of treating the substrate surface by the processing fluid are exhausted together with air through the intake ducts of the processing vessel 100. By being discharged to and removed from the member 400, a high degree of cleanliness inside the processing container is maintained.

The chamber 800 is divided into a process area 816 and a maintenance area 818 by a horizontal partition wall 814. Although only a part is shown in the drawing, in the maintenance area 818, in addition to the discharge lines 141, 143, and 145 connected to the processing vessel 100, and the sub-exhaust line 410, the driving unit of the lifting unit and the driving unit of the first swing nozzle unit 300 It is a space where 300b, a supply line, etc. are located, and the maintenance area 818 is preferably isolated from a process area in which substrate processing is performed.

The processing container 100 has a cylindrical shape with an open top, and provides a processing space for processing the substrate w. The opened upper surface of the processing container 100 is provided as a passage for carrying out and carrying in the substrate w. A substrate support member 200 is positioned inside the processing container 100. The substrate support member 200 supports the substrate W and rotates the substrate during the process.

Referring to FIG. 3, the processing vessel 100 is divided by an upper space 132a in which the spin head 210 is located, and a spin head 210 from the upper space 132a, and at the lower end so that forced exhaust is performed. A lower space 132b to which the exhaust duct 190 is connected is provided. In the upper space 132a of the processing vessel 100, the first, second, and third annular suction ducts 110, 120, 130 in the form of a multi-stage for introducing and inhaling the processing fluid, gas, and fumes scattered on the rotating substrate. It is placed as. The annular first, second and third suction ducts 110, 120, and 130 have exhaust ports H communicating with one common annular space (corresponding to the lower space of the container). An exhaust duct 190 connected to the exhaust member 400 is provided in the lower space 132b.

Specifically, the first to third suction ducts 110, 120, and 130 each include a bottom surface having an annular ring shape and a side wall extending from the bottom surface and having a cylindrical shape. The second suction duct 120 surrounds the first suction duct 110 and is spaced apart from the first suction duct 110. The third suction duct 130 surrounds the second suction duct 120 and is spaced apart from the second suction duct 120.

The first to third suction ducts 110, 120, and 130 provide first to third recovery spaces RS1, RS2, and RS3 into which the gas containing the fume and the processing fluid scattered from the substrate w are introduced. . The first recovery space RS1 is defined by the first suction duct 110, and the second recovery space RS2 is defined by a spaced space between the first suction duct 110 and the second suction duct 120. , The third recovery space RS3 is defined by a space between the second suction duct 120 and the third suction duct 130.

Each upper surface of the first to third suction ducts 110, 120, and 130 has a central opening and is formed of an inclined surface whose distance from the corresponding bottom surface gradually increases from the connected sidewall toward the opening. Accordingly, the treatment fluid scattered from the substrate w flows into the recovery spaces RS1, RS2, and RS3 along the upper surfaces of the first to third suction ducts 110, 120, and 130.

The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 141. The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 143. The third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 145.

On the other hand, the processing container 100 is coupled with an elevating unit 600 that changes the vertical position of the processing container 100. The lifting unit 600 linearly moves the processing container 100 in the vertical direction. As the processing container 100 is moved up and down, the relative height of the processing container 100 with respect to the spin head 210 is changed. When the substrate W is loaded onto the spin head 210 or unloaded from the spin head 210, the processing vessel 100 descends so that the spin head 210 protrudes from the top of the processing vessel 100.

In addition, when the process proceeds, the height of the processing container 100 is adjusted so that the processing liquid can be introduced into the predetermined suction ducts 110, 120, and 130 according to the type of the processing liquid supplied to the substrate W. Accordingly, the relative vertical position between the processing container 100 and the substrate w is changed. Accordingly, the treatment vessel 100 may have different types of the treatment liquid and the polluted gas recovered for each of the recovery spaces RS1, RS2, and RS3.

In this embodiment, the substrate processing apparatus 1 vertically moves the processing vessel 100 to change the relative vertical position between the processing vessel 100 and the substrate support member 200. However, the substrate processing apparatus 1 may vertically move the substrate supporting member 200 to change a relative vertical position between the processing vessel 100 and the substrate supporting member 200.

The substrate support member 200 is installed inside the processing container 100. The substrate support member 200 supports the substrate W during the process, and may be rotated by the driving unit 240 to be described later while the process is in progress. The substrate support member 200 has a spin head 210 having a circular upper surface, and support pins 212 and chucking pins 214 for supporting the substrate W are provided on the upper surface of the spin head 210. Have. The support pins 212 are disposed in a predetermined arrangement at a predetermined distance apart from the edge of the upper surface of the spin head 210, and are provided to protrude upward from the spin head 210. The support pins 212 support the lower surface of the substrate W so that the substrate W is supported in a state spaced from the spin head 210 in the upward direction. The chucking pins 214 are disposed on the outer sides of the support pins 212, respectively, and the chucking pins 214 are provided to protrude upward. The chucking pins 214 align the substrate W so that the substrate W supported by the plurality of support pins 212 is placed in a proper position on the spin head 210. During the process, the chucking pins 214 are in contact with the side of the substrate W to prevent the substrate W from being separated from the original position.

A support shaft 220 supporting the spin head 210 is connected to a lower portion of the spin head 210, and the support shaft 220 rotates by a driving unit 230 connected to the lower end thereof. The driving unit 230 may be provided with a motor or the like. As the support shaft 220 rotates, the spin head 210 and the substrate W rotate.

The exhaust member 400 is for providing an exhaust pressure (suction pressure) to the first to third intake ducts 110, 120, and 130 during a process. The exhaust member 400 is a sub connected to the exhaust duct 190. It includes an exhaust line 410 and a damper 420. The sub-exhaust line 410 receives exhaust pressure from an exhaust pump (not shown) and is connected to a main exhaust line buried in a floor space of a semiconductor production line (fab).

The fixed nozzle units 500 are fixedly installed on the top of the processing container 100 to supply ultrapure water, ozone water, nitrogen gas, etc. to the center of the substrate, respectively.

In this embodiment, the first swing nozzle unit and the second swing nozzle unit may be treatment liquid injection units.

The second swing nozzle unit 700 is moved to the upper center of the substrate through the swing movement to supply a fluid for drying the substrate on the substrate. The fluid for drying may include isopropyl alcohol and hot nitrogen gas.

The first swing nozzle units 300 are located outside the processing container 100. Treatment fluid for cleaning or etching the substrate w with the substrate placed on the spin head 210 while rotating in the boom swing method of the first swing nozzle units 300 (acidic liquid, alkaline liquid, neutral liquid, drying gas) Supply. As shown in FIG. 2, the first swing nozzle units 300 are arranged side by side, and each of the first swing nozzle units 300 has a different distance from the processing container 100, so the length thereof is You can see that they are different from each other.

4 is a side cross-sectional view showing the configuration of a first swing nozzle unit in the substrate processing apparatus shown in FIG. 2, and FIG. 5 is a view showing a first swing nozzle unit and a home port.

For reference, other swing nozzle units may have the same configuration as the first swing nozzle unit, and in this embodiment, the first swing nozzle unit will be described as a representative.

4 and 5, each of the first swing nozzle unit 300 includes a nozzle unit 300a located in a process area and a driving unit 300b for rotating the θ axis and moving up and down the z axis located in the maintenance area. And it includes a cover (300c) positioned between the nozzle unit (300a) and the driving unit (300b).

The nozzle tip 320 is installed at one end of the nozzle body 310.

The nozzle unit 300a may be moved to the process position and the standby position by the driving unit 300b. The process position is a position in which the nozzle tip 320 is positioned vertically above the spin head 210 to spray the processing fluid onto the substrate, and the standby position is where the nozzle tip 320 moves away from the vertical upper portion of the processing vessel 100. This is the waiting position at the home port 900.

In the home port 900, the treatment fluid is sprayed while the nozzle tip 320 waits before supplying the treatment fluid.

6 is a cross-sectional view of the home port, FIG. 7 is a cross-sectional view of the home port, and FIG. 8 is a plan view of the home port.

6 to 8, the home port 900 may include a body 910, a drain line 920 and a filter 930.

The body 910 provides an inner space R into which the treatment liquid discharged from the nozzle tip 320 is introduced. The body 910 is provided in the shape of a cylinder, and the lower part of the body 910 is provided with a diameter smaller than the upper part. The lower portion of the body 910 includes a drain hole 918 connected to the drain line 920.

The drain line 920 provides a line for discharging the discharge liquid when the treatment liquid is discharged. The drain line 920 is provided in connection with the drain hole 918 of the body 910. The treatment liquid that has passed through the drain line 920 may be stored in a separate storage unit (not shown). The drain line 920 is provided long in its length direction. The diameter of the drain line 920 may be provided smaller than the diameter of the body 910.

The filter 930 may be installed on the drain hole 918 of the body 910 connected to the drain line 920. The filter 930 may be installed so that the upper edge is spaced apart from the inner surface of the drain hole.

9 is a perspective view showing a filter.

6 to 9, the filter 930 may have a crater shape in cross section. A plurality of side drain holes 934 may be formed in the curved side surface 932 of the filter 930, and bottom drain holes 936 may be formed in the bottom surface 933.

The side drain hole 934 may be formed in a direction perpendicular to the side in a radial direction along the circumferential direction at the center of the filter 930.

The filter 930 has gap holding protrusions 938. The gap maintaining protrusions 938 are formed to protrude from the outer surface of the filter 930. The gap maintaining protrusions 938 are supported on the inner surface of the drain hole, so that a gap of a predetermined distance is provided between the filter 930 and the body 910. For example, the filter 930 may be spaced 0.1 to 0.5 mm from the inner surface of the drain hole 918 by the gap maintaining protrusions 938.

As described above, since the filter 930 is installed in a state spaced apart from the inner surface of the body 910, it is possible to solve the congestion caused by the filter 930 in the process of draining the treatment fluid, and the contact angle of the treatment fluid in the form of a crater angle) increases, so that the treatment fluid does not stagnate and drains smoothly, thereby suppressing the generation of fume.

10 is a diagram showing another example of a filter.

In describing the embodiment of FIG. 10, duplicate descriptions of components that are the same as or corresponding to the above-described embodiment may be omitted.

The filter 930a according to the embodiment of FIG. 10 is different from the previously described embodiment in that the side drain hole 934a is formed to be curved radially along the circumferential direction with respect to the center of the filter 930a.

According to the present embodiment, since the side drain holes 934a are formed in a spiral shape, when the treatment fluid is drained, a vortex is generated in the spiral direction of the side drain holes 934a, so that the treatment liquid can be smoothly drained.

11 is a diagram showing another example of a filter.

In describing the embodiment of FIG. 11, duplicate descriptions of components that are the same as or corresponding to the above-described embodiment may be omitted.

The filter 930b according to the embodiment of FIG. 11 is formed to protrude between the side drain holes 934a, and has guide protrusions 935 having the same spiral shape as the spiral shape of the side drain holes 934a. There is a difference from the embodiment described above.

According to the present embodiment, the side drain holes 934a and the guide protrusions 935 are formed in a spiral shape so that when the treatment fluid is drained, a vortex occurs in the spiral direction of the side drain holes 934a and the guide protrusions 935 While the treatment liquid can be drained smoothly.

The above description is merely illustrative of the technical idea of the present invention, and those of ordinary skill in the art to which the present invention pertains will be able to make various modifications and variations without departing from the essential characteristics of the present invention. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain the technical idea, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the claims below, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

10: chamber 100: processing container
200: substrate support member 300; 1st swing nozzle unit
300a; Nozzle part 900: home port
910: body 920: drain line
930: filter

Claims (16)

In the apparatus for processing a substrate,
A support unit supporting the substrate;
A container surrounding the support unit and recovering a treatment liquid;
A processing liquid supply unit including a nozzle for supplying a processing liquid to the substrate supported by the support unit;
It is disposed on one side of the container, when the substrate is not processed, the standby port for the nozzle to wait; includes,
The standby port,
A body including an inner space whose upper portion is opened so that the treatment liquid discharged from the nozzle flows in;
A drain line connected to the body and discharging the liquid in the inner space; And
A substrate processing apparatus comprising a filter installed on a drain hole of the body connected to the drain line, and installed to have an edge spaced apart from an inner surface of the drain hole. The method of claim 1,
The filter is
A substrate processing apparatus in which a cross section has a crater shape, a plurality of side drain holes are formed on a curved side, and bottom drain holes are formed on a bottom surface. The method according to claim 1 or 2,
The filter is
A substrate processing apparatus further comprising gap holding protrusions protruding from the outer surface. The method of claim 3,
The gap maintaining protrusions
A substrate processing apparatus supported on the inner surface of the drain hole. The method of claim 2,
The side drain hole is
The substrate processing apparatus is formed in a direction perpendicular to the side surface radially along a circumferential direction with respect to the center of the filter. The method of claim 2,
The side drain hole is
The substrate processing apparatus is formed to be curved in a spiral shape on the side surface radially along the circumferential direction of the filter. The method of claim 1,
The filter is
A substrate processing apparatus having a tapered shape in which the inlet side through which the processing liquid flows is wide and narrows downward. The method of claim 1,
The edge of the filter is a substrate processing apparatus spaced 0.1 ~ 0.5mm from the inner surface of the drain. A nozzle for supplying a processing liquid to a substrate is on standby, and in a groove port for discharging the processing liquid discharged by the nozzle to the outside,
A body having a discharge space through which the nozzle discharges the treatment liquid;
A drain line connected to the body; And
A home port comprising a filter installed on a drain hole of the body connected to the drain line, and installed at an edge to be spaced apart from an inner surface of the drain hole. The method of claim 9,
The filter is
It has a crater shape with a curved side and a flat bottom surface,
A plurality of side drain holes are formed on the curved side, and bottom drain holes are formed on the flat bottom surface. The method of claim 10,
The filter is
Home port further comprising a gap maintaining protrusions protruding from the outer surface. The method of claim 11,
The gap maintaining protrusions
A groove port supported on the inner surface of the drain hole. The method of claim 10,
The side drain hole is
A groove port formed in a direction perpendicular to the side surface radially along a circumferential direction with respect to the center of the filter. The method of claim 10,
The side drain hole is
A groove port formed in a spiral shape in a circumferential direction to the center of the filter so that a vortex is generated when the treatment liquid is drained so that the treatment liquid is drained smoothly. The method of claim 14,
The filter is
A home port formed to protrude between the side drain holes and including guide protrusions having the same helical shape as the shape of the side drain holes. The method of claim 9,
The filter is
The inlet side where the treatment liquid flows is wide and the groove port has a tapered shape that becomes narrower downward.

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