KR20210021576A - 수지 마스크 박리용 세정제 조성물 - Google Patents

수지 마스크 박리용 세정제 조성물 Download PDF

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Publication number
KR20210021576A
KR20210021576A KR1020217002126A KR20217002126A KR20210021576A KR 20210021576 A KR20210021576 A KR 20210021576A KR 1020217002126 A KR1020217002126 A KR 1020217002126A KR 20217002126 A KR20217002126 A KR 20217002126A KR 20210021576 A KR20210021576 A KR 20210021576A
Authority
KR
South Korea
Prior art keywords
component
mass
resin mask
cleaning
less
Prior art date
Application number
KR1020217002126A
Other languages
English (en)
Korean (ko)
Inventor
고우헤이 야마다
Original Assignee
카오카부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 카오카부시키가이샤 filed Critical 카오카부시키가이샤
Publication of KR20210021576A publication Critical patent/KR20210021576A/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Paints Or Removers (AREA)
KR1020217002126A 2018-07-27 2018-07-27 수지 마스크 박리용 세정제 조성물 KR20210021576A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/028330 WO2020021721A1 (ja) 2018-07-27 2018-07-27 樹脂マスク剥離用洗浄剤組成物

Publications (1)

Publication Number Publication Date
KR20210021576A true KR20210021576A (ko) 2021-02-26

Family

ID=69182301

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217002126A KR20210021576A (ko) 2018-07-27 2018-07-27 수지 마스크 박리용 세정제 조성물

Country Status (5)

Country Link
JP (1) JP7132214B2 (ja)
KR (1) KR20210021576A (ja)
CN (1) CN111566567B (ja)
TW (1) TWI810335B (ja)
WO (1) WO2020021721A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202235605A (zh) * 2020-11-17 2022-09-16 日商東京應化工業股份有限公司 膜洗淨液及膜之洗淨方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185235A (en) 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
WO2008039730A1 (en) 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
WO2008071078A1 (fr) 2006-12-15 2008-06-19 Anji Microelectronics (Shanghai) Co., Ltd. Composition nettoyante pour éliminer un photorésist
US20140155310A1 (en) 2005-10-28 2014-06-05 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4044215B2 (ja) * 1998-02-25 2008-02-06 花王株式会社 剥離剤組成物
JP2000019745A (ja) * 1998-07-06 2000-01-21 Kao Corp 剥離剤組成物
KR101328097B1 (ko) * 2006-01-11 2013-11-13 주식회사 동진쎄미켐 티에프티 엘시디용 칼라 레지스트 박리액 조성물
JP2007254555A (ja) * 2006-03-22 2007-10-04 Sanyo Chem Ind Ltd 洗浄剤組成物
CN101041794B (zh) * 2006-03-24 2012-02-22 达兴材料股份有限公司 清洗液组成物和其用途
KR101333779B1 (ko) * 2007-08-20 2013-11-29 주식회사 동진쎄미켐 티에프티 엘시디용 칼라 레지스트 박리액 조성물
JP6860276B2 (ja) * 2016-09-09 2021-04-14 花王株式会社 樹脂マスク剥離用洗浄剤組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185235A (en) 1987-09-09 1993-02-09 Tokyo Ohka Kogyo Co., Ltd. Remover solution for photoresist
US20140155310A1 (en) 2005-10-28 2014-06-05 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
WO2008039730A1 (en) 2006-09-25 2008-04-03 Advanced Technology Materials, Inc. Compositions and methods for the removal of photoresist for a wafer rework application
WO2008071078A1 (fr) 2006-12-15 2008-06-19 Anji Microelectronics (Shanghai) Co., Ltd. Composition nettoyante pour éliminer un photorésist

Also Published As

Publication number Publication date
JPWO2020021721A1 (ja) 2021-06-24
WO2020021721A1 (ja) 2020-01-30
CN111566567B (zh) 2024-07-12
TWI810335B (zh) 2023-08-01
CN111566567A (zh) 2020-08-21
TW202016662A (zh) 2020-05-01
JP7132214B2 (ja) 2022-09-06

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application