KR20200076614A - 플라즈마 처리 장치, 임피던스의 정합 방법 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치, 임피던스의 정합 방법 및 플라즈마 처리 방법 Download PDF

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Publication number
KR20200076614A
KR20200076614A KR1020190168095A KR20190168095A KR20200076614A KR 20200076614 A KR20200076614 A KR 20200076614A KR 1020190168095 A KR1020190168095 A KR 1020190168095A KR 20190168095 A KR20190168095 A KR 20190168095A KR 20200076614 A KR20200076614 A KR 20200076614A
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KR
South Korea
Prior art keywords
period
frequency power
plasma
high frequency
film
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KR1020190168095A
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English (en)
Korean (ko)
Inventor
치시오 고시미즈
다카시 도칸
신지 구보타
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20200076614A publication Critical patent/KR20200076614A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020190168095A 2018-12-19 2019-12-16 플라즈마 처리 장치, 임피던스의 정합 방법 및 플라즈마 처리 방법 KR20200076614A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2018-237154 2018-12-19
JP2018237154 2018-12-19
JP2019207063A JP7250663B2 (ja) 2018-12-19 2019-11-15 プラズマ処理装置及びインピーダンスの整合方法
JPJP-P-2019-207063 2019-11-15

Publications (1)

Publication Number Publication Date
KR20200076614A true KR20200076614A (ko) 2020-06-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190168095A KR20200076614A (ko) 2018-12-19 2019-12-16 플라즈마 처리 장치, 임피던스의 정합 방법 및 플라즈마 처리 방법

Country Status (4)

Country Link
JP (1) JP7250663B2 (zh)
KR (1) KR20200076614A (zh)
CN (1) CN111341637A (zh)
TW (1) TWI795616B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113202708B (zh) * 2021-05-16 2023-01-31 兰州空间技术物理研究所 一种离子电推进系统在全寿命周期下的工作方法
TW202335028A (zh) * 2021-10-28 2023-09-01 日商東京威力科創股份有限公司 電漿處理裝置、供電系統、控制方法、程式及記憶媒體

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016096342A (ja) 2015-11-26 2016-05-26 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001265057A1 (en) 2000-06-02 2001-12-17 Tokyo Electron Limited Apparatus and method for improving electron acceleration
JP4607930B2 (ja) * 2007-09-14 2011-01-05 株式会社東芝 プラズマ処理装置およびプラズマ処理方法
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
JP6378234B2 (ja) * 2016-03-22 2018-08-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6697372B2 (ja) * 2016-11-21 2020-05-20 キオクシア株式会社 ドライエッチング方法及び半導体装置の製造方法
JP6846387B2 (ja) 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016096342A (ja) 2015-11-26 2016-05-26 東京エレクトロン株式会社 プラズマ処理装置

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Publication number Publication date
CN111341637A (zh) 2020-06-26
JP2020102443A (ja) 2020-07-02
TW202040681A (zh) 2020-11-01
JP7250663B2 (ja) 2023-04-03
TWI795616B (zh) 2023-03-11

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