KR20200036682A - Film formation apparatus, film formation method, and manufacturing method of electronic device - Google Patents

Abstract

A film formation material ejected from a film formation source in a film formation standby area is suppressed from being attached to an object, on which a film is to be formed, by limiting, if possible, that the film formation material enters a film formation area. The film formation apparatus has: a facing member (41) disposed to face a film formation source (3) positioned in a film formation standby area (B1); and a shielding member (51) disposed on a film formation area (A) of the film formation source (3) positioned in the film formation standby area (B1), and moving relative to an object (2), on which a film is to be formed, together with the film formation source (3). The shielding member (51) has a facing end (5a) facing the facing member (41) when the film formation source (3) is positioned in the film formation standby area (B1), and the width L of the facing end (5a) in a relatively moving direction is greater than the shortest distance between the facing end (5a) and the facing member (41).

Description

Film forming apparatus, film forming method, and manufacturing method of electronic device TECHNICAL FIELD [FILM FORMATION APPARATUS, FILM FORMATION METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE}

The present invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device.

As a film-forming apparatus for forming a film-forming object on a substrate or the like, a film-forming device for arranging a film-forming object and a film-forming source opposite to each other and moving the film-forming source and the film-forming object relative to each other is known. Patent Document 1 describes a film forming apparatus (sputter device) in which sputtering particles (film forming material) are released from a target by sputtering a sputtering surface of a target (film forming source), and the sputtering particles are deposited on a film forming object to form a thin film. It is done. In this film-forming apparatus, film-forming is performed by moving the film-forming object parallel to the sputtering surface of the target while discharging sputtering particles from the target. In the film formation, the emission of sputtering particles is started while the target is in a region where the film formation object does not face the sputtering surface (film formation waiting area). Then, in a state in which the sputtering particles are released, the film-forming object moves to a region (film-forming region) facing the sputtering surface to form a film.

In addition, in Patent Document 1, a shielding plate (shielding member) is provided around the target to prevent sputtering particles from adhering to portions other than a film-forming object such as a wall surface of the chamber. The sputtering surface is exposed from an opening surrounded by an outer circumference by a shielding plate, and can face the film-forming object. At the opening end of the shielding plate, a protruding portion is provided that extends in a direction to narrow the exposed area of the sputtering surface, and the emission angle of the sputtering particles emitted from the sputtering surface by the protruding portion is limited. In the film forming apparatus described in Patent Literature 1, the shielding plate suppresses sputtering particles emitted from a target in the film formation waiting area from entering the film forming object.

International Publication No. 2012/057108

However, film-forming materials, such as sputtering particles, do not necessarily fly linearly. For example, since sputtering is performed by introducing a gas such as an inert gas, gas molecules are present in the atmosphere, and the sputtered particles that are released collide with gas molecules in the atmosphere and scatter. For this reason, sputtering particles emitted from the opening of the shielding plate scatter in the film formation waiting area, return to the film formation object side, and when the sputtering particles fly in a straight line, they may adhere to the film forming object in a non-adhering position. there was. When such an unintended deposition of a film-forming material from a film-forming source in a film formation waiting area to a film-forming object occurs, the film thickness of the film to be formed and the uniformity of the film quality are reduced.

As a method for suppressing unintended deposition of a film-forming material from a film-forming source in a film-forming waiting area to a film-forming object, a method of making the atmospheric position of the film-forming source far away from the film-forming object is also conceivable. However, in this method, the footprint (installation area) of the device increases, or the vacuum facility is enlarged by the enlargement of the chamber.

Accordingly, in view of the above-described problems, the present invention has an object to suppress the adhesion of a film-forming material emitted from a film-forming source from the film-forming source region to the film-forming region as much as possible, and to prevent adhesion to a film-forming object.

A film forming apparatus as an aspect of the present invention includes a chamber in which a film forming object and a film forming source that causes a film forming material to fly toward the film forming object to be deposited on the film forming object are disposed,

A film forming apparatus having moving means for moving the film forming source relative to the film forming object between a predetermined film forming waiting area and a film forming area,

An opposing member disposed to face the deposition source positioned in the deposition waiting area;

A shielding member disposed on the film formation region side of the film formation source positioned in the film formation waiting area and moving relative to the film formation object together with the film formation source,

The shielding member has opposing ends opposite to the opposing member when the film forming source is located in the film forming waiting area,

The width of the opposing end in the relative movement direction is characterized in that it is larger than the shortest distance between the opposing end and the opposing member when the film forming source is located in the film forming waiting area.

In addition, a film forming apparatus as another aspect of the present invention includes a chamber in which a film forming object and a film forming source that causes a film forming material to fly toward the film forming object to be deposited on the film forming object are disposed,

A film forming apparatus having moving means for moving the film forming source relative to the film forming object between a predetermined film forming waiting area and a film forming area,

An opposing member disposed to face the deposition source positioned in the deposition waiting area;

A shielding member disposed on the film formation region side of the film formation source positioned in the film formation waiting area and moving relative to the film formation object together with the film formation source,

The shielding member has opposing ends opposite to the opposing member when the film forming source is located in the film forming waiting area,

When the film forming source is located in the film forming waiting area, a gap is formed between the opposing member and the opposite end to limit the flying of the film forming material from within the film forming waiting area toward the film forming area. .

In addition, a method of forming a film as another aspect of the present invention includes a preparatory process in which a film forming source is placed in a film formation waiting area in a chamber, and a film forming material is brought into an emergency state from the film forming source,

The film-forming source, in which the film-forming material is in an emergency state in the preparation step, is moved relative to the film-forming object from the film-forming waiting area to the film-forming area in the chamber, and the film-forming material that is flying from the film-forming source is formed into the film-forming. A film forming method comprising a film forming step of depositing on an object to form a film,

In the film formation waiting area, an opposing member facing the film forming source located in the film forming waiting area is provided, and relative to the film forming object with the film forming source on the side of the film forming area of the film forming source. A shield member,

In the preparatory step, the film-forming source is placed in the film-forming atmosphere region and the discharge end of the film-forming material is started from the film-forming source while the opposite end of the shield member is brought close to the film-forming source. It is characterized in that a molding material moving toward the film formation region through a gap between the opposing end of the shielding member and the opposing member is attached to the opposing end of the opposing member and the shielding member.

Furthermore, a method of manufacturing an electronic device as another aspect of the present invention includes a preparatory process in which a film forming source is placed in a film formation waiting area in a chamber, and a film forming material is brought into an emergency state from the film forming source,

The film-forming source, in which the film-forming material is in an emergency state in the preparation step, is moved relative to the film-forming object from the film-forming waiting area to the film-forming area in the chamber, and the film-forming material that is flying from the film-forming source is formed into the film-forming. A method of manufacturing an electronic device having a film-forming step of depositing and depositing on an object,

In the film formation waiting area, an opposing member facing the film forming source located in the film forming waiting area is provided, and relative to the film forming object with the film forming source on the side of the film forming area of the film forming source. A shield member,

In the preparatory step, the film-forming source is placed in the film-forming atmosphere region and the discharge end of the film-forming material is started from the film-forming source while the opposite end of the shield member is brought close to the film-forming source. It is characterized in that a molding material moving toward the film formation region through a gap between the opposing end of the shielding member and the opposing member is attached to the opposing end of the adjacent opposing member and the shielding member.

ADVANTAGE OF THE INVENTION According to this invention, it is possible to suppress the adhesion of the film-forming material emitted from a film-forming source from the film-forming source area | region to the film-forming area side as much as possible, and to prevent it from adhering to a film-forming object.

1] (A) is a schematic diagram showing the configuration of a film forming apparatus according to the first embodiment, (B) is an enlarged view of the first film forming waiting area in (A), and (C) is a rotating cathode unit in the second film forming waiting area. Magnified view when in.
[Fig. 2] (A) is a top view of Fig. 1 (A), and (B) is a perspective view showing a magnet unit of a rotating cathode.
3 is a schematic diagram showing Modification Example 1 of the shielding member of the apparatus of FIG. 1, and (B) is a schematic diagram showing Modification Example 2. FIG.
4 is a schematic diagram showing Modification Example 3 of the shielding member of the apparatus of FIG. 1.
[Fig. 5] Fig. 5 shows a general layer structure of an organic EL device.

Hereinafter, embodiments of the present invention will be described in detail. However, the following embodiments are merely illustrative of preferred structures of the present invention, and the scope of the present invention is not limited to such configurations. In addition, in the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like, unless otherwise specified, are intended to limit the scope of the present invention to them. It is not.

[Embodiment 1]

First, with reference to FIG. 1 (A) and FIG. 2 (A), the basic structure of the film-forming apparatus 1 of Embodiment 1 is demonstrated. The film forming apparatus 1 according to the present embodiment is a semiconductor device, a magnetic device, various electronic devices such as electronic components, or an object to be formed in the manufacture of an optical component 2 (a laminate is formed on a substrate) It is used to deposit a thin film on). More specifically, the film forming apparatus 1 is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Among them, the film forming apparatus 1 according to the present embodiment can be particularly preferably applied in the production of organic light-emitting elements such as organic EL (ErectroLuminescence) elements or organic photoelectric conversion elements such as organic thin-film solar cells. . In addition, the electronic device in the present invention includes a display device (for example, an organic EL display device) equipped with a light-emitting element, a lighting device (for example, an organic EL lighting device), and a sensor (for example, a photoelectric conversion element). For example, it also includes an organic CMOS image sensor.

5 schematically shows the general layer structure of the organic EL device. As shown in Fig. 5, the organic EL device is generally configured such that an anode, a hole injection layer, a hole transport layer, an organic emission layer, an electron transport layer, an electron injection layer, and a cathode are formed on the substrate in this order. The film forming apparatus 1 according to the present embodiment is suitably used for forming a layered film such as a metal or metal oxide used for an electron injection layer or an electrode (cathode) by sputtering on an organic film. In addition, it is not limited to the film formation on the organic film, and as long as it is a combination of materials that can be formed by sputtering, such as a metal material or an oxide material, laminated film formation on various surfaces is possible.

The film forming apparatus 1 has a chamber 10 and a drive mechanism (linear drive mechanism 12), as shown in Fig. 1A. Inside the chamber 10, the film-forming object 2 and a rotating cathode unit 3 as a film-forming source (3) as a film-forming source for making the film-forming object 2 into a film by making sputter particles as a film-forming material fly toward the film-forming object 2 Simply referred to as "cathode unit 3") is disposed. The driving mechanism drives at least one of the cathode unit 3 and the film formation object 2 so that the cathode unit 3 moves relative to the film formation object 2. In this embodiment, the linear drive mechanism 12 which is a drive mechanism drives the cathode unit 3. In addition, this invention is not limited to this, The drive mechanism may drive the film-forming object 2, and drive by a drive mechanism may not be linear drive.

A gas introducing means and an exhaust means (not shown) are connected to the chamber 10, and are configured to maintain the inside at a predetermined pressure. That is, a sputter gas (an inert gas such as argon or a reactive gas such as oxygen or nitrogen) is introduced into the chamber 10 by a gas introducing means, and from inside the chamber 10, a vacuum pump Exhaust is performed by exhaust means such as, and the pressure inside the chamber 10 is regulated to a predetermined pressure.

The film-forming object 2 is held by the holder 21 and is horizontally arranged on the ceiling wall 10d side of the chamber 10. The film-forming object 2 is carried in, for example, from a gate valve (not shown) provided on the sidewall of the chamber 10 to form a film, and after film formation, is discharged from the gate valve. In the illustrated example, the film formation is performed in a state in which the film formation surface 2a of the film formation object 2 is directed downward in the direction of gravity, but is not limited to this. For example, the film-forming object 2 is disposed on the bottom side of the chamber 10 and the cathode unit 3 is disposed above it, so that the film-forming surface 2a of the film-forming object 2 faces upward in the direction of gravity It may be a so-called depot-down configuration in which film formation is performed. Alternatively, the film formation may be performed in a state where the object 2 is vertically erected, that is, the film formation surface of the object 2 is parallel to the direction of gravity.

The cathode unit 3 is provided with a pair of rotating cathodes 3A, 3B arranged in parallel at predetermined intervals in the moving direction. The two rotating cathodes 3A, 3B are supported by a support block 210 and an end block 220, both ends of which are fixed on the mobile table 230, as shown in Fig. 2A. Further, the rotating cathodes 3A and 3B have a cylindrical target 35 and a magnet unit 30 disposed therein. The target 35 is rotatably supported by the support block 210 and the end block 220, and the magnet unit 30 is supported in a fixed state. In addition, although the magnet unit 30 is not rotated here, it is not limited to this, The magnet unit 3 may also rotate or rock. The moving table 230 is supported to be movable in a direction parallel to the film forming surface 2a of the film forming object 2 along a pair of guide rails 250 through a conveying guide such as a linear bearing (here, a horizontal direction). Is becoming. In the drawing, if the direction parallel to the guide rail 250 is the X axis, the vertical direction is the Z axis, and the direction perpendicular to the guide rail 250 in the horizontal plane is the Y axis, the cathode unit 3 has its rotation axis In the state toward the Y-axis direction, while rotating around the rotation axis, the film-forming object 2 is moved in parallel, that is, on the XY plane in the X-axis direction.

The targets 35 of the rotating cathodes 3A and 3B are cylindrical in this embodiment, and function as a source of a film forming material for forming a film on the film forming object 2. The material of the target 35 is not particularly limited, and examples thereof include metal elements such as Cu, Al, Ti, Mo, Cr, Ag, Au, Ni, or alloys or compounds containing such metal elements. have. As the material of the target 35, transparent conductive oxides such as ITO, IZO, IWO, AZO, GZO, and IGZO may be used. In the target 35, a layer of a backing tube 35a made of another material is formed inside the layer on which such a film-forming material is formed. A power source 13 is electrically connected to the backing tube 35a and functions as a cathode to which a bias voltage is applied from the power source 13. The bias voltage may be applied to the target itself, or there may be no backing tube. Also, the chamber 10 is grounded. In addition, although the target 35 is a cylindrical target, the term "cylindrical" as used herein does not mean only a mathematically rigid cylinder, but the mother bus is not a straight line, but a curved line, or a mathematically rigid cross section perpendicular to the central axis. Includes non- That is, the target 2 in this invention should just be a cylindrical thing which can rotate about a central axis.

The magnet unit 30 forms a magnetic field in the direction toward the film-forming object 2, and as shown in FIG. 2 (B), the center magnet 31 extending in a direction parallel to the rotation axis of the rotating cathode 3A And, the center magnet 31 surrounding the center magnet 31 is provided with a peripheral magnet 32 of a dipole and a yoke plate 33. The peripheral magnet 32 is constituted by a pair of straight portions 32a and 32b extending parallel to the center magnet 31 and rotating portions 32c and 32d connecting both ends of the straight portions 32a and 32b. It is done. The magnetic field formed by the magnet unit 3 has a magnetic force line that returns from the magnetic pole of the central magnet 31 to the linear portions 32a and 32b of the peripheral magnet 32 in a loop shape. As a result, a toroidal magnetic field tunnel extending in the long longitudinal direction of the target 35 is formed near the surface of the target 35. By this magnetic field, electrons are captured, and plasma can be concentrated in the vicinity of the surface of the target 35 and the efficiency of sputtering can be increased.

The target 35 is rotationally driven by the target driving device 11 which is a rotational driving device. Although the target drive device 11 is not particularly shown, it has a drive source such as a motor, and a general drive mechanism for transmitting power to the target 35 via a power transmission mechanism is applied, for example, a support block ( 210) or the end block 220. On the other hand, the moving table 230 is linearly driven in the X-axis direction by the linear drive mechanism 12. Although the linear drive mechanism 12 is not particularly shown, various known linear motion mechanisms, such as a screw feed mechanism using a ball screw or the like, which converts the rotational motion of the rotary motor into linear motion, a linear motor, can be used. .

Moreover, one end of the atmospheric arm mechanism 60 comprised by the link mechanism following linear motion is connected to the mobile table 230. The atmospheric arm mechanism 60 has a plurality of hollow arms 61 and 62, the inside of which is maintained at atmospheric pressure, and these arms 61 and 62 are rotatably connected to each other in the joint portion 63. One end of the arm 61 is rotatably connected to the attachment portion of the bottom wall 10a of the chamber 10, and the end of the other arm 62 is rotatably connected to the attachment portion of the mobile table 230 connected. Inside the atmospheric arm mechanism 60, a power cable connected to the motor of the linear drive mechanism 12 or the target drive device 11, a signal cable for control signals, a tube for flowing coolant, and the like are stored.

In the chamber 10, the film forming region A in which the cathode unit 3 moves while facing the film forming object 2 and the film forming to the film forming object 2 by the cathode unit 3 are stopped and the cathode unit ( A film formation waiting area B for waiting 3) is provided. The film formation waiting area B is disposed on at least one side of the upstream side and the downstream side in the movement direction of the cathode unit 3 with respect to the film formation region A. In this example, the film formation waiting area B is provided on both the upstream side and the downstream side in the moving direction of the cathode unit 3. Here, the film formation waiting area refers to a region on which the cathode unit 3 (film forming source) is located when the film forming material 2 is not formed on the film forming target 2. On the other hand, the film-forming region refers to a region where the cathode unit 3 (film-forming source) is located when film-forming material is being formed on the film-forming object 2. In the present embodiment, at least one of before and after film formation by the cathode unit 3, particularly before film formation, discharge (presputter) for the preparation of the film formation while the cathode unit 3 is waiting in the film formation waiting area B Do it. By performing pre-sputtering in the film formation standby region B, and then moving the cathode unit 3 to the film formation region A, discharge stability at the start of film formation can be improved, and the film thickness and film quality of the film to be formed are uniform. Can increase. The movement of the film forming source from the film formation waiting area B to the film forming area A is performed by a driving mechanism (linear driving mechanism 12). In other words, in the present embodiment, the linear drive mechanism 12 is a moving means for moving the film forming source relative to the film forming object 2 between the film forming waiting area B and the film forming area A.

Of the two film formation waiting areas in this embodiment, one is referred to as the first film forming waiting area B1 (right in FIG. 1 (A)) and the other as the second film forming waiting area B2 (left in the figure). If so, the cathode unit 3 may wait in either of the first film formation waiting area B1 and the second film forming waiting area B2. When the cathode unit 3 is waiting in the first film formation waiting area B1, in the subsequent film forming process, the cathode unit 3 makes the film forming area A and the direction of the second film forming waiting area B2. (In the drawing, move from right to left; moving direction FL). In the film-forming process, the cathode unit 3 may return to the first film-forming waiting area B1 by reversing the direction of movement within the film-forming area A, without inverting or inverting the second film forming waiting area after being inverted an even number of times ( B2). When the cathode unit 3 is waiting in the second film forming region B2, in the subsequent film forming process, the cathode unit 3 makes the film forming region A and the direction of the second film forming waiting region B2 ( In the figure, it moves from left to right; moving direction FR). In the film-forming process, the cathode unit 3 may return to the second film-forming waiting area B2 by inverting the movement direction within the film-forming area A, without inverting or even inverting the first film-forming waiting area ( B1) may be reached. As described above, since the moving direction is only opposite, mainly in the following description, the case where the cathode unit waits in the first film formation waiting area B1 will be described as an example.

The first film forming waiting area B1 is provided with a first opposing member 41 facing the cathode unit 3 waiting in the first film forming waiting area B1. Further, on the film forming region A side of the cathode unit 3, a first shielding member 51 that is moved relative to the film forming object 2 together with the cathode unit 3 is provided. The 1st shielding member 51 has the opposing end part 5a which opposes in the state which adjoins the opposing member 4 in the position where the cathode unit 3 waits for the 1st film formation waiting area B1, and opposing end part A gap G is formed between 5a and the opposing member 41. By this gap G, the sputtering particles (film forming material) generated when pre-sputtering the cathode unit 3 in the first film forming waiting area B1 is restricted to the film forming area A side, and returns Entry is restricted. In order to effectively limit the return, it is preferable to set the width of the movement direction FL of the opposing end 5a forming the gap G to be larger than the shortest distance between the opposing end 5a and the first opposing member 41. That is, when the width of the movement direction of the opposite end 5a of the first shielding member 51 is L, and the shortest distance between the opposite end 5a and the first opposing member 41 is d1, the following equation (1) It is preferable to satisfy.

L> d1 ··· (1)

In this embodiment, the width of the opposing end 5a of the first shielding member 51 and the arrangement of the opposing end 5a and the first opposing member 41 are adjusted to further satisfy the following expression (2). have.

L≥3d1 ··· (2)

Thereby, the return of sputter particles to the film-forming region (A) side is suppressed more effectively. In this relationship, the larger the ratio of the width L to the distance d1 is, the higher the effect of suppressing rebound can be increased, and it is more preferable to satisfy the following formula (3).

L≥5d1 ··· (3)

Since the larger the ratio of the width L to the distance d1 (L / d1) can enhance the effect of suppressing the sputtering particles, from the viewpoint of the effect of suppressing the return, the larger the width L is, the smaller the distance d1 is. It is preferred. However, if the distance d1 is made too small, the shielding members 5a and 5b and the opposing members 41 and 42 may interfere when the cathode unit 3 is driven. Therefore, it is preferable to increase the ratio of the width L to the distance d1 by appropriately adjusting the width L and the distance d1. In addition, the distance d1 is preferably 5 mm or more and 30 mm or less, for example, in order to avoid interference between the shielding member and the opposing member. Therefore, the width L is, for example, preferably 30 mm or more, more preferably 90 mm or more, and even more preferably 150 mm or more. More specifically, the distance d1 is preferably about 10 mm, so in this case, the width L is preferably 10 mm or more, more preferably 30 mm or more, and 50 mm or more More preferred.

In addition, when the minimum distance between the opposing end 5a facing the first opposing member 41 of the first shielding member 51 and the rotating cathode 3A as the film formation source is d2, the following expression (4) is satisfied. It is preferred.

L> d2 ··· (4)

The minimum distance d2 is a circular target of the rotating cathode 3A, with a line connecting the cross-section center of the rotating cathode 3A from the edge E on the side of the first film formation waiting area B1 of the opposite end 5a. It is the distance to the point which intersects the surface of (35). With this setting, it is possible to more effectively limit the return of the sputtered particles entering the gap G to the film formation region A side.

In this embodiment, the second shielding member 52 is provided on the opposite side of the first shielding member 51 with the cathode unit 3 interposed therebetween. The 1st shielding member 51 and the 2nd shielding member 52 are connected by the base plate part 53 fixed to the mobile base 230. When the cathode unit 3 waits in the 2nd film formation waiting area B2, the 2nd shielding member 52 is located in the film forming area A side, as shown in FIG. 1 (C), and is 2nd. Between the 2nd opposing member 42 arrange | positioned in the film formation waiting area B2, it becomes the same relationship as the relationship between the 1st shielding member 51 and the 1st opposing member. That is, at the position where the cathode unit 3 waits in the second film formation waiting area B2, it has the opposing end 5a facing in the state close to the second opposing member 42, and the opposing end 5a and the A gap G is formed between the two opposing members 42. By this gap G, the sputtering particles (forming material) generated during pre-sputtering in the second film formation waiting area B2 to the film forming area A side are restricted, and returning is restricted. In order to effectively limit the return, the width L of the movement direction F of the opposing end 5a forming the gap G is set larger than the shortest distance d1 between the opposing end 5a and the second opposing member 42. . In this case as well, the first shielding member 51 is preferably (L≥3d1), and more preferably, (L≥5d1).

The first opposing member 41 and the second opposing member 42 are both horizontal plate portions 4a extending horizontally (XY plane) so as to face the rotating cathode unit 3, and reflection of the horizontal plate portion 4a. It has a vertical plate portion 4b extending vertically (YZ plane) so as to cover the side of the semi-filmed region of the rotating cathode unit 3 from the end of the membrane region side. It is the horizontal plate part 4a that the opposing end part 5a of the said 1st shielding member 51 opposes. The length of the horizontal plate portion 4a in the direction of movement (FL, FR) and the parallel direction is longer than the length of the rotating cathode unit 3 including the first shielding member 51 and the second shielding member 52. On the other hand, the first shielding member 51 is a plate-shaped member extending in a direction intersecting with respect to the moving direction FL of the rotating cathode unit 3, in this example, an orthogonal direction, and horizontally of the first opposing member 41 An extension in which the base end portion 5b of the first shielding member 51 extends wider than the thickness in the movement direction on a flat surface where the opposite end portion 5a facing the plate portion 4a is parallel to the horizontal plate portion 4a. It is becoming wealth.

」자 형상으로 굴곡진 형상이며, 기단부(5b)로부터 제1 대향 부재(41)의 수평판부(4a) 측을 향해 서서히 성막 영역(A) 측으로 경사하는 기단측 경사면(5d1)과, 기단측 경사면(5d1)의 단부로부터 제1 대향 부재(41)를 향해, 서서히 회전 캐소드(3A) 측으로 경사하는 대향 단부측 경사면(5d2)을 구비하고 있다. 이 대향 단부측 경사면(5d2)을 구비함으로써, 성막원이 성막 대기 영역(B)에 있을 때 성막 재료(스퍼터 입자)가 간극 G에 진입하기 어려워지고, 이에 의해, 성막 영역(A)으로의 돌아 들어옴을 보다 더 억제할 수 있다. 제2 차폐 부재(52)는, 제1 회전 캐소드(3A)와 제2 회전 캐소드(3B)의 중간을 통과하는 YZ면에 대해서, 제1 차폐 부재(51)와 대칭 형상이며, 동일한 구성 부분에 대해, 동일한 부호를 부여하고, 설명은 생략한다.In this embodiment, the 1st side surface 5c of the side facing the film-forming area A of the 1st shielding member 51 is upward from the base end part 5b fixed to the bottom plate part 53 (opposite member side) It becomes an inclined surface gradually inclined toward the film formation region A toward the. On the other hand, the second side surface 5d on the side of the rotating cathode unit 3 of the first shielding member 51 is configured to bypass the rotating cathode 3A.

The base end side inclined surface 5d1 and the base end side inclined surface gradually inclined toward the film forming region A from the base end portion 5b toward the horizontal plate portion 4a side of the first opposing member 41 An opposite end side inclined surface 5d2 gradually inclined toward the rotating cathode 3A from the end of (5d1) toward the first opposing member 41 is provided. By providing the opposite end-side inclined surface 5d2, it is difficult for the film-forming material (sputter particles) to enter the gap G when the film-forming source is in the film-forming waiting area B, thereby returning to the film-forming area A Ingress can be further suppressed. The second shielding member 52 is symmetrical to the first shielding member 51 with respect to the YZ plane passing through the middle of the first rotating cathode 3A and the second rotating cathode 3B, and has the same configuration part. The same reference numerals are used, and the description is omitted.

Next, a film forming method by the film forming apparatus 1 will be described. The following description will be given for the case where the cathode unit 3 waits in the first film formation waiting area B1 and moves through the film forming area A and moves toward the second film forming waiting area B2.

First, the cathode unit 3 waits in the first film formation waiting area B1 (in FIG. 1 (A), right). In this first film forming standby region B1, prior to the film forming process (this sputtering configuration), the cathode unit 3 is driven, and bias potentials are applied to the first rotating cathode 3A and the second rotating cathode 3B. do. Thereby, pre-sputter (preparation process) is performed in which each target 35 is rotated and sputter particles are released. The pre-sputtering is preferably performed until the generation of plasma formed around each target 35 is stabilized.

In this pre-sputtering process, among the sputter particles discharged from each target 35, the sputter particles flying toward the ceiling wall 10d of the chamber 10 are horizontal plate portions 51a of the first opposing member 51. Most of the sputtering particles are shielded by, and the sputtering particles flying in the direction of movement FL toward the film forming region A are mostly shielded by the first shielding member 51, and further to the side opposite to the film forming region A The flying sputter particles are shielded by the second shielding member 52. On the other hand, the sputter particles entering the gap G between the opposite end portion 51a of the first shielding member 51 and the first opposing member 41 are scattered and are moving in various directions, so while passing through the gap G, It is attached to the opposing ends 5a of the adjacent first opposing member 41 and the first shielding member 51. Thereby, the flying of the sputter particles is limited, and the amount of sputter particles returning to the film formation region A is limited.

Then, after pre-sputtering for a predetermined time, the process proceeds to this sputtering process. That is, while sputtering by rotationally driving the target 35 of the cathode unit 3, the linear drive mechanism 12 is driven to enter the film formation region A. Then, within the film-forming region A, the cathode unit 3 is moved with respect to the film-forming object 2 at a predetermined speed. In the meantime, the plasma is concentrated by the magnet unit 30 in the vicinity of the surface of the target 35 facing the film formation object 2, and the gas ions in the positive ion state in the plasma sputter the target 35, Scattered sputter particles are deposited on the film-forming object 2. With the movement of the cathode unit 3, sputter particles are sequentially deposited from the upstream side to the downstream side in the direction of movement of the cathode unit 3 to form a film. Upon passing through the film formation region A, the cathode unit 3 enters the second film formation standby region B2, stops the linear drive mechanism 12, and stops driving the cathode unit 3. Further, if necessary, the film may be formed by reciprocating.

Next, a modified example of the shielding member of the present invention will be described. In the following description, mainly only the differences from the shielding member of the first embodiment are described, and the same reference numerals are given to the same components, and the description is omitted.

[Modification 1]

3 (A) shows a modification 1 of the shielding member. In this modified example 1, the first shielding member 151 is provided with a straight vertical plate portion 15b and a extending portion 15a that extends horizontally from one end of the vertical plate portion 15b toward the film formation region A side. It is a structure, and the extending part 15a comprises the opposite end part which opposes the horizontal plate part 4a of the 1st opposing member 41. As shown in FIG. Also in this case, a gap G is formed between the unfolding portion 15a and the horizontal plate portion 4a of the opposing member 41, and this gap G causes pre-sputtering in the first film formation waiting area B1. The return of sputter particles (molding material) to the film formation region (A) side is limited. The relationship between the width L of the moving direction F of the extending portion 15a and the shortest distance d1 between the extending portion 15a and the horizontal plate portion 4a of the first opposing member 41 is the first of the first embodiment. It is the same as the relationship between the shielding member and the first opposing member.

About the 2nd shielding member 152, it is symmetrical shape with the 1st shielding member 151, About the same structural part, the same code | symbol is attached | subjected and description is abbreviate | omitted. In this way, unlike the first embodiment, the first shielding member 151 and the second shielding member 152 can be molded by bending molding of a plate material, thereby facilitating molding.

[Modification 2]

3 (B) shows Modification 2 of the shielding member. In this modification 2, similarly to modification 1, the first shielding member 251 also extends from the straight vertical plate portion 25b and one end of the vertical plate portion 25b toward the film formation region A side. ), But the elongated portion 25a does not extend horizontally, and has an inclined structure that gradually inclines toward the film forming region A toward the horizontal plate portion of the opposing member. The extended portion 25a constitutes an opposite end portion facing the horizontal plate portion 4a of the first opposing member 41. Also in this case, a gap G is formed between the unfolding portion 25a and the horizontal plate portion 4a of the opposing member 41, and this gap G causes pre-sputtering in the first film formation waiting area B1. The return of sputter particles (molding material) to the film formation region (A) side is limited. The relationship between the width L of the moving direction F of the extending portion 15a and the shortest distance d1 between the extending portion 25a and the horizontal plate portion 4a of the first opposing member 41 is the first of the first embodiment. It is the same as the relationship between 1 shielding member and the 1st opposing member. However, the shortest distance d1 between the unfolding portion 25a and the horizontal plate portion 4a of the first opposing member 41 is the unfolding end on the side of the film formation region A of the unfolding portion 25a.

The second shielding member 252 is also symmetrical to the first shielding member 251, and the same reference numerals are given to the same constituent parts and the description is omitted. Also in this case, the first shielding member 251 and the second shielding member 252 can be molded by bending molding of a plate material, thereby facilitating molding. In addition, the inclined structure of the elongated portion 25a may be configured to be inclined so that the gap opens toward the film formation region A with respect to the horizontal plate portion 4a of the first opposing member 41, and the gap is It may be in a step-like shape that gradually decreases in size, and various modifications are possible.

[Modification 3]

4 shows a modification 3 of the shielding member. In this modification 3, similarly to modification 1, the first shielding member 351 is made of a straight plate material, but has no extension at one end, and an opposite end 35a of the straight first shielding member 351 Is to be close to the horizontal plate portion 4a of the first opposing member 41. Also in this case, a gap G is formed between the opposing end portion 35a and the horizontal plate portion 4a of the opposing member 41, and the gap G causes pre-sputtering in the first film formation waiting area B1. The return of sputter particles (molding material) to the film formation region (A) side is limited. In order to effectively limit the return, the width L of the moving direction F of the opposing end 35a forming the gap G is set larger than the shortest distance d1 between the opposing end 35a and the first opposing member 41. The second shielding member 352 is also symmetrical to the first shielding member 351, and the same reference numerals are given to the same constituent parts and explanation is omitted.

[Other embodiments]

Further, in the above-described embodiment, the cathode unit 3 has two rotating cathodes 3A and 3B arranged in two, but may be three or more or one. Further, the cathode unit 3 may be a planar cathode having a flat-shaped target, not a rotary cathode having a rotatable target 35. Furthermore, the present invention is not limited to the sputter film forming apparatus, and can be applied to a film forming source of a deposition method that does not use sputtering.

1: film forming apparatus
2: Object to be formed
3: Rotating cathode unit (Team Tabernacle)
41, 42: first and second opposing members
51, 52: 1st, 2nd shield member
5a: opposite end
10: chamber
12: linear drive mechanism (driving mechanism, moving means)
A1: film formation region
B1, B2: first and second film formation waiting areas
L: width of opposite ends
d1: shortest distance between opposing ends and opposing members

Claims (15)

A chamber in which a film-forming object and a film-forming source that causes a film-forming material to fly toward the film-forming object to be deposited on the film-forming object are disposed;
A film forming apparatus having moving means for moving the film forming source relative to the film forming object between a predetermined film forming waiting area and a film forming area,
An opposing member disposed to face the deposition source positioned in the deposition waiting area;
A shielding member disposed on the film formation region side of the film formation source positioned in the film formation waiting area and moving relative to the film formation object together with the film formation source,
The shielding member has opposing ends opposite to the opposing member when the film forming source is located in the film forming waiting area,
The film forming apparatus characterized in that the width of the opposing end in the relative movement direction is larger than the shortest distance between the opposing end and the opposing member when the film forming source is located in the film forming waiting area. According to claim 1,
The shielding member has a wall portion extending in a direction intersecting with respect to the relative movement direction of the film forming source, the opposite end portion is provided at one end of the wall portion, and the opposite end portion has a thickness in the relative movement direction of the wall portion. A film forming apparatus comprising a wider extension. The method according to claim 1 or 2,
The moving means moves the film forming source and the shielding member along a film forming surface of the film forming object. The method according to any one of claims 1 to 3,
The film forming source is a film forming apparatus, characterized in that the sputtering cathode. The method according to any one of claims 1 to 4,
The film forming source has a magnetic field generating means disposed at a position facing the film forming object via a target disposed in the chamber. The method of claim 4 or 5,
A film forming apparatus characterized in that plasma is generated around the film forming source in the film formation waiting area before film formation on the film forming object. The method according to any one of claims 1 to 6,
It has a first film formation waiting area arranged on the upstream side in the relative moving direction of the film forming source by the moving means, and a second film forming waiting area arranged on the downstream side in the relative moving direction of the film forming source by the moving means. ,
And a first opposing member facing the film forming source in the first film forming waiting area, and a second opposing member facing the film forming source in the second film forming waiting area. The method according to any one of claims 1 to 7,
It has a 1st shielding member arrange | positioned on the upstream side of the relative movement direction of the said film-forming source by the said moving means, and the 2nd shielding member arrange | positioned on the downstream side of the relative movement direction of the said film-forming source by said moving means. Film-forming apparatus made of. The method of claim 8,
The opposing end portion of the first shielding member opposite to the opposing member extends from the film forming source side toward an upstream side in the relative movement direction of the film forming source by the moving means,
The film forming apparatus characterized in that the opposite end portion of the second shielding member opposite to the counter member extends from the film forming source side toward a downstream side in the relative movement direction of the film forming source by the moving means. The method according to any one of claims 1 to 9,
When the width of the relative movement direction of the opposing end is L and the shortest distance between the opposing end and the opposing member is d1, the film forming apparatus satisfying the following formula (1).
L≥3d1 ... Equation (1) The method according to any one of claims 1 to 9,
When the width of the relative movement direction of the opposing end is L and the shortest distance between the opposing end and the opposing member is d1, the film forming apparatus satisfying the following formula (2).
L≥5d1 ... Equation (2) The method according to any one of claims 1 to 11,
When the minimum distance between the opposite end opposite to the opposing member of the shielding member and the film forming source is d2, the film forming apparatus further satisfies the following formula (3).
L> d2 ... (3) A chamber in which a film-forming object and a film-forming source that causes a film-forming material to fly toward the film-forming object to be deposited on the film-forming object are disposed;
A film forming apparatus having moving means for moving the film forming source relative to the film forming object between a predetermined film forming waiting area and a film forming area,
An opposing member disposed to face the deposition source positioned in the deposition waiting area;
A shielding member disposed on the film formation region side of the film formation source positioned in the film formation waiting area and moving relative to the film formation object together with the film formation source,
The shielding member has opposing ends opposite to the opposing member when the film forming source is located in the film forming waiting area,
When the film forming source is located in the film forming waiting area, a gap is formed between the opposing member and the opposite end to limit the flying of the film forming material from within the film forming waiting area toward the film forming area. Deposition apparatus. A preparation step in which a film formation source is placed in a film formation waiting area in a chamber, and a film forming material is brought into emergency from the film formation source;
The film-forming source, in which the film-forming material is in an emergency state in the preparation step, is moved relative to the film-forming object from the film-forming waiting area to the film-forming area in the chamber, and the film-forming material that is flying from the film-forming source is formed into the film-forming. A film forming method comprising a film forming step of depositing on an object to form a film,
In the film formation waiting area, an opposing member facing the film forming source located in the film forming waiting area is provided, and relative to the film forming object with the film forming source on the side of the film forming area of the film forming source. A shield member,
In the preparatory step, the film-forming source is placed in the film-forming atmosphere region and the discharge end of the film-forming material is started from the film-forming source while the opposite end of the shield member is brought close to the film-forming source. And forming a molding material moving toward the film forming region through a gap between the opposing end of the shielding member and the opposing member to the opposing end of the opposing member and the shielding member. A preparation step in which a film formation source is placed in a film formation waiting area in a chamber, and a film forming material is brought into emergency from the film formation source;
The film-forming source, in which the film-forming material is in an emergency state in the preparation step, is moved relative to the film-forming object from the film-forming waiting area to the film-forming area in the chamber, and the film-forming material that is flying from the film-forming source is formed into the film-forming. A method of manufacturing an electronic device having a film-forming step of depositing and depositing on an object,
In the film formation waiting area, an opposing member facing the film forming source located in the film forming waiting area is provided, and relative to the film forming object with the film forming source on the side of the film forming area of the film forming source. A shield member,
In the preparatory step, the film-forming source is placed in the film-forming atmosphere region and the discharge end of the film-forming material is started from the film-forming source while the opposite end of the shield member is brought close to the film-forming source. A method of manufacturing an electronic device, characterized in that a molding material moving toward the film formation region through a gap between the opposing end of the shielding member and the opposing member is attached to the opposing end of the opposing member and the shielding member.

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