KR20200030781A - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing device capable of accurately controlling the grinding thickness of a substrate and improving grinding efficiency. The substrate processing device includes: a substrate mounting unit on which the substrate is mounted; a grinding unit including a grinding pad moving while being in contact with the substrate, and grinding the upper surface of the substrate; a fluid removing pad moving on the substrate while rotating and removing a residual fluid remaining on the surface of the substrate; a thickness measuring unit installed in the fluid removing pad and measuring thickness information of the substrate from which the residual fluid is removed; and a control unit controlling the grinding parameters of the substrate based of the thickness information on the substrate.

Description

Substrate processing device {SUBSTRATE PROCESSING APPARATUS}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of accurately controlling the polishing thickness of a substrate and improving polishing efficiency.

Recently, as interest in information display has increased and the demand to use a portable information medium has increased, it has been applied to a lightweight flat panel display (FPD) that replaces the existing display device, the cathode ray tube (CRT). Korea's research and commercialization are focused.

In the field of flat panel display devices, a liquid crystal display device (LCD), which is light and has low power consumption, has been the most popular display device, but the liquid crystal display device is not a light emitting device but a light receiving device, and has a brightness and contrast ratio. ratio) and viewing angles, etc., development of a new display device capable of overcoming these disadvantages has been actively developed. Among them, an organic light emitting display (OLED) is one of the next-generation displays that have recently been spotlighted.

In general, a glass substrate having excellent strength and transmittance is used in a display device. Recently, since a display device is directed toward slimming and high-pixel, a corresponding glass substrate must be prepared.

For example, as one of the OLED processes, in the laser laser annealing (ELA) process in which amorphous silicon (a-Si) is injected and crystallized into polysilicon (poly-Si), protrusions may occur on the surface while polysilicon is crystallized. Since these projections can cause mura-effects, the glass substrate must be polished to remove the projections.

On the other hand, during the polishing process of the substrate, if the polishing conditions such as the pressing force and the rotational speed of the carrier head pressing the polishing pad on the substrate are not optimized according to the polishing state of the substrate, there is a problem that it is difficult to precisely control the thickness distribution of the substrate. Therefore, the polishing conditions of the substrate must be optimized according to the polishing conditions and the polishing conditions of the substrate.

Therefore, in the past, during the polishing process of the substrate, an attempt was made to control the thickness deviation of the substrate by real-time sensing the thickness of the substrate and adjusting the pressing force of the carrier head pressing the polishing pad according to the thickness distribution of the substrate. , It is difficult to accurately measure the thickness of the substrate when a fluid such as a slurry remains on the upper surface of the substrate, and when the measurement error of the thickness occurs, there is a great possibility that the thickness distribution of the substrate and the end time of polishing are incorrectly recognized. There is this.

As another known method of determining the end point of polishing of a substrate, there is a method of determining the end point of polishing of a substrate by detecting a torque change of a carrier head that rotates the polishing pad while pressing the surface of the substrate.

However, since the torque change of the carrier head may be caused by various factors such as the material of the substrate as well as the pressing force applied to the substrate, it is difficult to accurately determine the polishing end time of the substrate based on the torque change of the carrier head. In particular, it is practically very difficult to measure the torque change of the carrier head within a short time and to determine the end time of polishing of the substrate according to the measured result.

To this end, in recent years, various studies have been conducted to accurately detect the polishing state of the substrate and to accurately control the polishing end point, but it is still insufficient to develop it.

An object of the present invention is to provide a substrate processing apparatus capable of accurately controlling the polishing thickness of a substrate and improving polishing efficiency.

In particular, it is an object of the present invention to be able to quickly and accurately control the end point of polishing of the substrate.

In addition, an object of the present invention is to increase the polishing efficiency of the substrate and to improve the polishing quality.

In addition, an object of the present invention is to simplify the polishing control of the substrate and to increase the control efficiency.

In addition, an object of the present invention is to detect the life of the polishing pad for polishing the substrate and to allow the polishing pad to be replaced in a timely manner.

According to a preferred embodiment of the present invention for achieving the above-described objects of the present invention, a polishing unit comprising a substrate mounting portion on which the substrate is mounted, a polishing pad moving in contact with the substrate, and polishing the top surface of the substrate And a fluid removal pad that moves while rotating relative to the substrate and removes residual fluid remaining on the surface of the substrate, and a thickness measurement unit mounted on the fluid removal pad and measuring thickness information of the substrate from which the residual fluid has been removed. It provides a substrate processing apparatus including a control unit for controlling a polishing parameter of the substrate based on the thickness information of the substrate.

As described above, according to the present invention, an advantageous effect of accurately controlling the polishing thickness of the substrate and improving polishing efficiency can be obtained.

In particular, according to the present invention, by controlling the polishing parameter of the substrate based on the thickness information of the substrate measured in a state where the residual fluid remaining on the surface of the substrate is removed, the polishing thickness of the substrate is accurately controlled, and the polishing of the substrate The advantageous effect of quickly and accurately controlling the end point can be obtained.

Further, according to the present invention, the polishing efficiency can be improved, and the substrate can be polished without deviation with the intended exact thickness, and an advantageous effect of improving the polishing quality can be obtained.

Further, according to the present invention, it is possible to obtain an advantageous effect of simplifying the polishing control of the substrate and increasing the control efficiency.

Further, according to the present invention, it is possible to obtain an advantageous effect of improving productivity and yield.

1 is a plan view showing the configuration of a substrate processing apparatus according to the present invention,
2 is a substrate processing apparatus according to the present invention, a perspective view for explaining a polishing part,
3 is a substrate processing apparatus according to the present invention, a side view for explaining a polishing part,
4 is a substrate processing apparatus according to the present invention, a view for explaining the fluid removal pad and the thickness measurement unit,
5 to 7 is a substrate processing apparatus according to the present invention, a view for explaining the loading process of the substrate,
9 is a substrate processing apparatus according to the present invention, a plan view for explaining the polishing path of the polishing unit to the substrate,
10 is a substrate processing apparatus according to the present invention, a view for explaining a retainer,
11 is a substrate processing apparatus according to the present invention, a view for explaining a slurry supply hole,
12 and 13 is a substrate processing apparatus according to the present invention, a view for explaining the process of adjusting the polishing parameters of the substrate,
14 and 15 is a substrate processing apparatus according to the present invention, a view for explaining the unloading process of the substrate.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, in the present description, the same numbers refer to substantially the same elements, and the contents described in other drawings may be cited and described under these rules, and repeated contents that are deemed to be obvious to those skilled in the art or may be omitted.

1 is a plan view showing the configuration of a substrate processing apparatus according to the present invention, FIG. 2 is a substrate processing apparatus according to the present invention, a perspective view for explaining a polishing part, and FIG. 3 is a substrate processing apparatus according to the present invention , It is a side view for explaining the polishing part. In addition, FIG. 4 is a substrate processing apparatus according to the present invention, and is a view for explaining a fluid removal pad and a thickness measurement unit. 9 is a plan view for explaining a polishing path of a polishing unit for a substrate as a substrate processing apparatus according to the present invention. 10 is a diagram for explaining a retainer as a substrate processing apparatus according to the present invention, and FIG. 11 is a diagram for explaining a slurry supply hole as a substrate processing apparatus according to the present invention. 12 and 13 are substrate processing apparatuses according to the present invention, and are views for explaining a process of adjusting a polishing parameter of a substrate, and FIGS. 14 and 15 are substrate processing apparatuses according to the present invention. It is a drawing for explaining a loading process.

1 to 15, the substrate processing apparatus 10 according to the present invention moves in a state in contact with the substrate W mounting portion 201 on which the substrate W is mounted and the substrate W A polishing unit 230 that includes a polishing pad 232 and polishes the top surface of the substrate W, and a fluid that moves while rotating relative to the substrate W and removes residual fluid remaining on the surface of the substrate W The removal pad 240, a thickness measurement unit 250 mounted on the fluid removal pad 240 and measuring the thickness information of the substrate W from which the residual fluid has been removed, and the thickness information of the substrate W It includes a control unit 260 for controlling the polishing parameters of the substrate (W).

This is to precisely control the polishing thickness of the substrate W and to improve the polishing efficiency.

That is, in polishing a substrate, when a residual fluid such as a slurry or a cleaning liquid remains on the upper surface of the substrate, there is a problem that it is difficult to accurately measure the thickness of the substrate due to interference and measurement errors caused by the residual fluid, and measurement errors in thickness When is generated, there is a big problem in that the thickness distribution of the substrate and the end time of polishing are incorrectly recognized.

In particular, a large-area glass substrate (for example, a 6th generation substrate of 1500 mm * 1850 mm) has a very large size, so when polishing the substrate with a polishing pad having a smaller size than the substrate, the surface of the substrate is a slurry and a cleaning solution. There is a problem in that it cannot be discharged outside the substrate and remains on the surface of the substrate. When the residual fluid remains on the surface of the substrate, it is difficult to accurately measure the thickness of the substrate due to interference and refraction by the residual fluid.

However, the present invention measures the thickness information of the substrate W while removing the residual fluid remaining on the surface of the substrate W, and controls the polishing parameters of the substrate W based on the thickness information of the substrate W By doing so, it is possible to obtain a favorable effect of polishing the substrate W to the intended exact thickness without deviation and improving the polishing quality.

Moreover, the present invention allows the residual fluid to be removed only from the portion to be measured of the substrate W on which the thickness measurement of the substrate W is performed, so that the remaining portion of the substrate W except for the portion to be measured of the substrate W is removed. Since it can maintain a wet state, it is possible to obtain an advantageous effect of improving polishing efficiency and polishing uniformity.

The substrate mounting portion 201 is disposed between the loading part 100 and the unloading part 300, and the substrate W supplied to the loading part 100 is transferred to the substrate mounting portion and transferred to the substrate mounting portion 201 After being polished in a seated state, it is unloaded through the unloading part 300.

More specifically, the loading part 100 is provided to load the substrate W to be polished to the polishing part 200.

The loading part 100 may be formed of various structures capable of loading the substrate W on the polishing part 200, and the present invention is not limited or limited by the structure of the loading part 100.

For example, the loading part 100 is provided to transport the substrate W at the same height as the transport belt 210, and includes a plurality of loading transport rollers 110 spaced apart at predetermined intervals, and a plurality of The substrate W supplied to the upper portion of the loading transfer roller 110 is transported cooperatively by a plurality of loading transfer rollers 110 as the loading transfer roller 110 rotates. In some cases, it is also possible that the loading part comprises a circulating belt that rotates cyclically by a loading conveying roller.

Here, the loading part 100 transfers the substrate W at the same height as the transfer belt 210 means that the loading part 100 is disposed at a height that allows bending deformation of the substrate W, and the substrate W ). For example, in the state where the substrate protrudes from the loading part (the substrate is transferred so as to escape the loading transport roller disposed at the outermost), the loading part is slightly smaller than the conveyance belt in consideration of the bending deformation due to the weight of the protruding part of the substrate. It can be placed at a high height (eg, within 10 mm). However, if bending deformation of the substrate can be suppressed, the height at which the substrate W is transferred from the loading part 100 and the height at which the substrate W is seated and transferred at the transfer belt 210 may be the same. .

In addition, the substrate W supplied to the loading part 100 may be aligned in a posture and position in which posture and position are determined by an alignment unit (not shown) before being supplied to the loading part 100.

For reference, as the substrate W used in the present invention, a rectangular substrate W having a side length greater than 1 m may be used. For example, as the substrate W to which the chemical mechanical polishing process is performed, a 6th generation glass substrate W having a size of 1500 mm * 1850 mm may be used. In some cases, it is also possible that 7th and 8th generation glass substrates are used as substrates to be processed. Alternatively, alternatively, it is also possible that a substrate having a length of one side smaller than 1 m (for example, a second generation glass substrate) is used.

The substrate mounting unit 201 is provided to transfer the substrate W between the start time of polishing of the substrate W and the end time of polishing.

Here, when the substrate mounting unit 201 transfers the substrate W between the start time of polishing and the end time of polishing of the substrate W, polishing of the substrate W by the polishing unit 230 is performed. In the meantime, it is defined as a concept including a state in which the substrate W is transferred (continuously transferred or stepwise transferred) or a stationary state.

For reference, in the present invention, polishing the substrate W is defined as polishing the substrate W by a mechanical polishing process or a chemical mechanical polishing (CMP) process on the substrate W. For example, while mechanical polishing is performed on the substrate W, a slurry for chemical polishing is supplied together and a chemical mechanical polishing (CMP) process is performed.

For example, the polishing part 200 is provided to be movable along a predetermined path and is disposed inside the transfer belt 210 and the transfer belt 210 on which the substrate W is mounted on the outer surface, and the transfer belt 210 It includes a substrate support portion 201 including a substrate support portion 220 for supporting the bottom surface of the substrate (W) with a, and a polishing unit 230 for polishing the surface of the substrate (W). Hereinafter, an example in which the polishing unit 230 moves relative to the substrate W while the substrate W is being transferred and polishes the surface of the substrate will be described.

More specifically, the transfer belt 210 transfers the substrate W along the first direction, and the polishing unit 230 is a second orthogonal to the first direction while the substrate W is transported along the first direction. The surface of the substrate W is polished while reciprocating along the direction.

For example, the transfer belt 210 is disposed adjacent to the loading part 100 and is configured to rotate in an infinite loop manner along a predetermined path. The substrate W transferred from the loading part 100 to the transfer belt 210 is transferred in the first direction as the transfer belt 210 rotates circulating while seated on the outer surface of the transfer belt 210.

More specifically, the substrate W transferred from the loading part 100 to the transfer belt 210 is polished in a state where it is seated on the outer surface of the transfer belt 210 as the transfer belt 210 rotates (substrate It can be transferred to the upper position of the support. In addition, the substrate W, which has been polished, may be transferred from the polishing position to the unloading part 300 side as the transport belt 210 rotates.

The circulating rotation of the transfer belt 210 can be done in various ways depending on the required conditions and design specifications. For example, the transfer belt 210 rotates circulatingly along a path determined by the roller unit 212, and the substrate W seated on the transfer belt 210 moves linearly by the rotational rotation of the transfer belt 210. It is transported along the path.

The movement path (eg, a circulation path) of the transfer belt 210 may be variously changed according to required conditions and design specifications. For example, the roller unit 212 includes a first roller 212a and a second roller 212b disposed horizontally spaced from the first roller 212a, and the transfer belt 210 includes a first roller ( 212a) and the second roller 212b rotates in an infinite loop manner.

At this time, any one or more of the first roller 212a and the second roller 212b is configured to rotate by a normal driving motor (a single motor or a plurality of motors).

For reference, the outer surface of the transfer belt 210 means an outer surface exposed to the outside of the transfer belt 210, and a substrate W is mounted on the outer surface of the transfer belt 210. In addition, the inner surface of the transfer belt 210 means an inner surface of the transfer belt 210 in which the first roller 212a and the second roller 212b contact.

In addition, any one or more of the first roller 212a and the second roller 212b may be configured to move linearly in a direction that is selectively approached and separated from each other. For example, the first roller 212a is fixed and the second roller 212b may be configured to move linearly in a direction approaching and spaced apart from the first roller 212a. In this way, the tension of the transfer belt 210 can be adjusted by allowing the second roller 212b to approach and be spaced apart from the first roller 212a according to manufacturing tolerances and assembly tolerances.

Here, adjusting the tension of the transfer belt 210 is defined as adjusting the tension by pulling or loosening the transfer belt 210 tautly. In some cases, it is also possible to provide a separate tension adjusting roller and adjust the tension of the transport belt by moving the tension adjusting roller. However, it is preferable to move any one or more of the first roller and the second roller to improve the structure and space utilization.

In addition, referring to FIG. 10, a surface layer 210a may be formed on the outer surface of the transfer belt 210 to suppress slip by increasing a friction coefficient with respect to the substrate W.

As described above, by forming the surface layer 210a on the outer surface of the transfer belt 210, the substrate W for the transfer belt 210 in the state where the substrate W is seated on the outer surface of the transfer belt 210 ( The movement of W) can be constrained (constrained to slip), and an advantageous effect of stably maintaining the placement position of the substrate W can be obtained.

The surface layer 210a may be formed of various materials having bonding properties with the substrate W, and the present invention is not limited or limited by the material of the surface layer 210a. For example, the surface layer 210a is formed of an engineering plastic excellent in stretchability and adhesion (friction). In some cases, the first surface layer may be formed of another material having a non-slip function, for example, polyurethane having a non-slip function.

Moreover, by forming the surface layer 210a having elasticity on the outer surface of the transfer belt 210, even when a foreign substance flows between the substrate W and the transfer belt 210, at the portion where the foreign substance is located as much as the thickness of the foreign substance Since the surface layer 210a can be pressed, the height deviation of the substrate W due to the foreign material (a specific part of the substrate is locally protruded by the foreign material) can be resolved, and a specific part of the substrate W is locally protruded. It is possible to obtain an advantageous effect of minimizing the decrease in polishing uniformity as it becomes. Preferably, the surface layer 210a is formed to have a compression ratio of 20-50%.

At this time, the surface layer 210a is preferably formed entirely on the outer surface of the transfer belt 210.

The substrate support unit 220 is disposed inside the transfer belt 210 and is provided to support the bottom surface of the substrate W with the transfer belt 210 interposed therebetween.

More specifically, the substrate support unit 220 is disposed inside the transfer belt 210 to face the bottom surface of the substrate W, and supports the inner surface of the transfer belt 210.

The substrate support 220 may be configured to support the inner surface of the transfer belt 210 in various ways depending on the required conditions and design specifications. For example, the substrate support part 220 includes a support plate 221 (eg, a stone plate) that is in close contact with the inner surface of the transfer belt 210.

In this way, by supporting the support plate 221 to support the inner surface of the transfer belt 210 at the lower portion of the substrate W, the self-weight and polishing unit 230 of the substrate W presses the substrate W Sagging of the transfer belt 210 according to the ship can be prevented.

Hereinafter, an example in which the support plate 221 is formed in a substantially rectangular plate shape will be described. In some cases, the substrate support portion may be formed in other shapes and structures, and two or more support plates may be continuously disposed to support the inner surface of the transfer belt.

On the other hand, in the above-described and illustrated embodiment of the present invention, the substrate support 220 is described as an example configured to support the inner surface of the transfer belt 210 in a contact manner, but in some cases, the substrate support is of the transfer belt It is also possible to configure the inner surface to be supported in a non-contact manner.

For example, the substrate support portion is configured to inject fluid into the inner surface of the transfer belt, and support the inner surface of the transfer belt by an injection force by the fluid. At this time, the substrate support may spray at least one of gas (eg, air) and liquid (eg, pure water) on the inner surface of the transfer belt, and the type of fluid may be determined according to required conditions and design specifications. It can be changed in various ways. Thus, by supporting the inner surface of the transfer belt 210 in a non-contact state, an advantageous effect of minimizing the reduction in processing efficiency due to frictional resistance (factors that interfere with the movement (rotation) of the transfer belt) can be obtained.

In some cases, it is also possible to configure the substrate support to support the inner surface of the transfer belt in a non-contact manner by using a magnetic force (for example, repulsive force) or a floating force caused by ultrasonic vibration.

The polishing unit 230 is provided to polish the surface of the substrate W in contact with the surface of the substrate W.

For example, the polishing unit 230 includes a polishing pad 232 that is formed to have a smaller size than the substrate W and moves while rotating while being in contact with the substrate W.

More specifically, the polishing pad 232 is mounted on the carrier head 231 and pressed, and linearly polishes (flattens) the surface of the substrate W while rotating in contact with the surface of the substrate W.

The carrier head may be formed of various structures capable of rotating the polishing pad 232, and the present invention is not limited or limited by the structure of the carrier head. For example, the carrier head may be configured as one body, or may be configured by combining a plurality of bodies, and is configured to rotate in connection with a drive shaft (not shown). In addition, the carrier head is provided with a pressing portion (for example, a pneumatic pressing portion for pressing the polishing pad with pneumatic pressure) for pressing the polishing pad 232 to the surface of the substrate W.

The polishing pad 232 is formed of a material suitable for mechanical polishing of the substrate W. For example, the polishing pad 232 is polyurethane, polyurea, polyester, polyether, epoxy, polyamide, polycarbonate, polyethylene, polypropylene, fluoropolymer, vinyl polymer, acrylic and methacrylic polymer, Silicone, latex, nitride rubber, isoprene rubber, butadiene rubber, and may be formed using various copolymers of styrene, butadiene, and acrylonitrile, and the material and properties of the polishing pad 232 are subject to required conditions and design specifications. It can be changed in various ways.

Preferably, as the polishing pad 232, a circular polishing pad 232 having a smaller size than the substrate W is used. That is, it is possible to polish the substrate using a polishing pad having a size larger than the substrate, but when a polishing pad having a size larger than the substrate is used, a very large rotating equipment and space are required to rotate the polishing pad. , There is a problem that the space efficiency and design freedom is reduced and stability is reduced. More preferably, the polishing pad 232 is formed to have a diameter smaller than 1/2 of the horizontal or vertical length of the substrate.

In practice, it is very difficult to rotate the polishing pad having a size larger than the substrate (for example, a polishing pad having a diameter larger than 1 m) because the large area substrate has a size of at least one side greater than 1 m. There is a problem. In addition, when a non-circular polishing pad (for example, a rectangular polishing pad) is used, the surface of the substrate polished by the rotating polishing pad cannot be polished to a uniform thickness as a whole. However, the present invention, by rotating the circular polishing pad 232 having a smaller size than the substrate (W) to polish the surface of the substrate (W), without significantly reducing the space efficiency and design freedom polishing pad ( It is possible to polish the substrate W by rotating 232, and an advantageous effect of keeping the amount of polishing by the polishing pad 232 uniform throughout can be obtained.

The substrate W is transferred in the first direction by rotation of the transfer belt 210 and at the same time, the polishing unit 230 is configured to reciprocate along a second direction orthogonal to the first direction.

As described above, by performing the polishing of the substrate W simultaneously with the transfer of the substrate W, an advantageous effect of simplifying the polishing process of the substrate W and shortening the polishing time of the substrate W can be obtained. .

That is, it is also possible to transfer the substrate to the unloading part after polishing the substrate by moving the polishing unit with respect to the substrate while the position of the substrate is fixed (the rotation of the transport belt is stopped). However, as the substrate polishing process and the substrate transfer process are individually performed, there is a problem that the processing time of the substrate increases and productivity decreases.

However, according to the present invention, an advantageous effect of shortening the processing time of the substrate W and improving productivity is obtained by simultaneously performing the polishing process of the substrate W and the transfer process of the substrate.

Moreover, when the transfer belt 210 rotates, the substrate W 220 is transferred in a manner in which the substrate W is transferred in the first direction and the polishing unit 230 reciprocates in the second direction to polish the substrate W. ) And the transfer belt 210 has the advantage that it can be made smaller.

That is, in order to polish the substrate while the movement of the substrate by the transfer belt is stopped, the entire bottom surface of the substrate must necessarily be supported by the substrate support. As described above, in a structure in which the entire bottom surface of the substrate is to be supported during the polishing process, the substrate support portion must be formed to have the same or larger size than the substrate, and the size of the transfer belt is inevitably included in order to place the substrate support portion inside the transfer belt. Since it has to be large, there is a problem in that design freedom and space utilization are deteriorated.

However, in the present invention, since the substrate W is polished by the polishing unit 230 reciprocating in the second direction while the substrate W is transferred in the first direction, the substrate support 220 is smaller than the substrate W. It is possible to form a size and allow the substrate support part 220 to partially support only a part of the bottom surface of the substrate W without supporting the entire bottom surface of the substrate W.

As such, by allowing the support plate 221 to be made smaller than the substrate W, it is also possible to manufacture the transfer belt 210 in a small size, and has an advantageous effect of improving design freedom and space utilization. Can be obtained.

In addition, in the present invention, since the polishing unit 230 only needs to move in a single direction (second direction), equipment such as the gantry unit 20 for moving the polishing unit 230 is simplified, and the polishing unit 230 ), An advantageous effect of improving the stability and reliability of movement can be obtained.

As the substrate W is transported along the first direction and the polishing unit 230 reciprocates in a second direction orthogonal to the first direction, the polishing path of the polishing unit 230 with respect to the substrate W is staggered Form.

That is, referring to FIG. 9, as the substrate W is transported along the first direction and at the same time as the polishing unit 230 reciprocates in the second direction orthogonal to the first direction, the polishing pad 232 is applied to the substrate ( The substrate W is repeatedly moved in a zigzag manner with respect to the substrate along the first diagonal path L1 inclined with respect to one side of the W and the second diagonal path L2 inclined in the opposite direction of the first diagonal path L1 ) To polish the surface.

Here, the first diagonal path L1 means a path inclined at a predetermined angle θ with respect to the left side of the substrate W, for example. In addition, the second diagonal path L2 means a path inclined at a predetermined angle toward the opposite direction of the first diagonal path L1 so as to intersect with the first diagonal path L1.

In addition, in the present invention, that the polishing pad 232 repeatedly zigzag moves along the first diagonal path L1 and the second diagonal path L2, the polishing pad 232 contacts the surface of the substrate W It is defined that the movement path of the polishing pad 232 with respect to the substrate W is not interrupted while moving to the other state (conversion from the first diagonal path to the second diagonal path) without being interrupted. In other words, the polishing pad 232 continuously moves along the first diagonal path L1 and the second diagonal path L2 and forms a moving trajectory of continuously connected waves.

More specifically, the first diagonal path L1 and the second diagonal path L2 are line-symmetrical based on one side of the substrate W, and the polishing pad 232 has a first diagonal path L1 and a second diagonal path The surface of the substrate W is polished while repeatedly zigzag along (L2). In this case, the first diagonal path L1 and the second diagonal path L2 are referred to as line symmetry based on one side of the substrate W, and the first diagonal path L1 is centered around one side 11 of the substrate W. ) And the second diagonal path (L2) are symmetrical, it means that the first diagonal path (L1) and the second diagonal path (L2) overlap completely, and one side of the substrate (W) and the first diagonal path (L1) ) And the angle formed by one side of the substrate W and the second diagonal path L2 are defined to be the same.

Preferably, the polishing pad 232 has a length less than or equal to the diameter of the polishing pad 232 as a reciprocating pitch to the substrate W along the first diagonal path L1 and the second diagonal path L2. About to go back and forth. At this time, the pitch of the reciprocating movement of the polishing pad 232 with respect to the substrate can be adjusted by controlling the transfer speed in the first direction of the substrate by rotation of the transfer belt. Hereinafter, the polishing pad 232 regularly reciprocates with respect to the substrate W along the first diagonal path L1 and the second diagonal path L2 with a length corresponding to the diameter of the polishing pad 232 as a reciprocating pitch. The moving example will be described.

At this time, the polishing unit 230 may be configured to linearly move in the second direction by a structure (not shown), such as a gantry (Gantry), by the type and structure of the structure to move the polishing unit 230 The present invention is not limited or limited. For example, the gantry may include a first support shaft and a second support shaft disposed on both sides of the substrate with a substrate interposed therebetween, and a connecting shaft connecting the first support shaft and the second support shaft, and the polishing unit 230. Silver may be mounted on the connecting shaft so as to be movable in a straight line along the second direction.

As described above, the surface of the substrate W is polished while the polishing pad 232 repeatedly zigzag moves along the first and second diagonal paths L1 and L2 with respect to the substrate W. The polishing pad 232 in the entire surface area of the substrate W is allowed to move forward with respect to the substrate W by making the length 232 equal to or smaller than the diameter of the polishing pad 232 as the reciprocating pitch P. It is possible to obtain an advantageous effect of regularly and uniformly polishing the entire surface of the substrate W without a region where polishing by) is omitted.

Here, when the polishing pad 232 moves forward with respect to the substrate W, the polishing pad 232 moves with respect to the substrate W along the first diagonal path L1 and the second diagonal path L2. While it is defined as moving forward toward the front of the substrate W (for example, from the left side to the right side of the substrate based on FIG. 9). In other words, for a right triangle made of a base, a hypotenuse, and a stool, the underside of the right triangle is defined as the left side of the substrate W, and the hypotenuse of the right triangle is the first diagonal path (L1) or the second diagonal path. It can be defined as (L2), the right side of the triangular triangle can be defined as the forward movement distance of the polishing pad 232 with respect to the substrate (W).

In other words, the polishing pad 232 is repeatedly moved in a zigzag manner with respect to the substrate W by moving the length smaller than or equal to the diameter of the polishing pad 232 to the reciprocating pitch (moving along the first and second diagonal paths) ), By polishing the substrate W, it is possible to prevent the occurrence of a region where polishing by the polishing pad 232 is omitted in the entire surface area of the substrate W, and thus the thickness variation of the substrate W And uniformly control the thickness distribution of the substrate W with respect to the two-dimensional plate surface, thereby obtaining an advantageous effect of improving the polishing quality.

For reference, the above-described and illustrated embodiments of the present invention describe an example in which the abrasive part is composed of only one abrasive unit 230, but in some cases, the abrasive part may include two or more abrasive units. Do. As an example, the polishing part may include two or more polishing units. At this time, each of the plurality of polishing units includes a polishing pad, and may be configured to polish the surface of the substrate while moving toward the same path or the opposite direction to each other.

The fluid removal pad 240 moves while rotating relative to the substrate W, and is provided to remove residual fluid remaining on the surface of the substrate W.

For example, the fluid removal pad 240 is configured to move while rotating relative to the substrate W while in contact with the substrate W. According to another embodiment of the present invention, it is also possible for the fluid removal pad to move while rotating relative to the substrate in a finely spaced state from the substrate so as to be in contact with the residual fluid.

More specifically, the fluid removal pad 240 is configured to move while rotating in contact with the substrate W, and residual fluid remaining on the surface of the substrate W is centrifugal force due to rotation of the fluid removal pad 240 By this, it is discharged to the outside of the fluid removal pad 240 (CW in FIG. 4).

The fluid removal pad 240 is formed of a material capable of minimizing the influence of polishing of the substrate W or minimizing the damage of the substrate W, and the present invention is provided by the material and structure of the fluid removal pad 240. It is not limited or limited.

For example, as the fluid removal pad 240, a circular fluid removal pad 240 having a size smaller than the substrate W is used. As such, because the fluid removal pad 240 has a smaller size than the substrate W, the residual fluid is removed only from the area where the fluid removal pad 240 comes into contact (the area to be measured), and the blood of the substrate W is removed. The rest of the substrate W, except for the measurement site, is covered by the residual fluid and can maintain a wet state.

In some cases, it is possible to form the fluid removal pad in other shapes such as polygons and ovals, and the shape and structure of the fluid removal pad can be variously changed according to required conditions and design specifications.

The fluid removal pad 240 is configured to move relative to the substrate W along various paths according to required conditions and design specifications.

For example, the transfer belt 210 transfers the substrate W along the first direction, and the fluid removal pad 240 is a second orthogonal to the first direction while the substrate W is transported along the first direction. It moves reciprocally along the direction to remove the fluid remaining on the surface of the substrate (W).

Preferably, the fluid removal pad 240 is disposed in the forward direction of the polishing pad 232 relative to the substrate W (eg, the first direction) in front of the polishing pad 232.

In addition, the substrate processing apparatus includes a cleaning fluid supply unit 270 that supplies cleaning fluid to the bottom surface of the fluid removal pad 240.

The cleaning fluid supplied to the bottom surface of the fluid removal pad 240 cleans the surface of the substrate W, and the centrifugal force caused by rotation of the fluid removal pad 240 causes the fluid removal pad 240 to be removed together with the residual fluid. It is discharged to the outside (CW in FIG. 4).

As described above, by supplying the cleaning fluid to the bottom surface of the fluid removal pad 240 while rotating the fluid removal pad 240 in contact with the substrate W, the area to be measured (thickness measurement) Since cleaning can be performed simultaneously with removal of residual fluid from the surface portion of the substrate W), an advantageous effect of accurately measuring the thickness of the substrate W and controlling the polishing thickness of the substrate W can be obtained. have.

That is, when a fluid such as a slurry remains on the upper surface of the substrate, there is a problem in that it is difficult to accurately measure the thickness of the substrate due to interference and measurement errors caused by the fluid. There is a great possibility that the end point is incorrectly recognized.

However, the present invention measures the thickness information of the substrate W in a state where the residual fluid is removed from the surface of the substrate W and cleaned, and the polishing parameters of the substrate W are determined based on the thickness information of the substrate W. By controlling, the substrate W can be polished without deviation to the intended exact thickness, and an advantageous effect of improving the polishing quality can be obtained.

Moreover, the present invention allows the residual fluid to be removed only from the portion to be measured of the substrate W on which the thickness measurement of the substrate W is performed, so that the remaining portion of the substrate W except for the portion to be measured of the substrate W is removed. Since it can maintain a wet state, an advantageous effect of improving polishing efficiency and polishing uniformity can be obtained.

Here, the wet state of the substrate W means a wet state in which the surface of the substrate W is not dried but is covered with the residual fluid.

In this way, by keeping the polishing surface of the substrate W in a wet state, the slurry supplied to the substrate W can be spread more effectively between the substrate W and the polishing pad 232, The advantageous effect of further improving the polishing efficiency and polishing uniformity of the substrate W can be obtained.

The cleaning fluid supply unit 270 may be formed in various structures capable of supplying cleaning fluid (eg, pure water) to the bottom surface of the fluid removal pad 240.

For example, the cleaning fluid supply unit 270 is provided with a cleaning fluid supply hole 272 exposed to the bottom surface of the fluid removal pad 240 and a cleaning fluid supply hole 272 mounted on the fluid removal pad 240. It includes a rotary union (rotary union) (274) for supplying.

Preferably, the cleaning fluid supply hole 272 is formed outside the thickness measurement part 250 along the radial direction of the fluid removal pad 240.

As described above, the cleaning fluid supplied to the bottom surface of the fluid removal pad 240 is formed by forming the cleaning fluid supply hole 272 on the outside of the thickness measurement part 250 along the radial direction of the fluid removal pad 240. It is possible to obtain an advantageous effect of suppressing the invasion by the thickness measurement unit 250. In other words, the cleaning fluid supplied to the bottom surface of the fluid removal pad 240 is discharged to the outside of the fluid removal pad 240 without invading the thickness measurement unit 250 by centrifugal force by rotation of the fluid removal pad 240 Can be.

The cleaning fluid supply hole 272 may be formed in a variety of grooves capable of supplying cleaning fluid to the bottom surface of the fluid removal pad 240.

For example, the cleaning fluid supply hole 272 is formed in a ring shape surrounding the circumference of the thickness measurement part 250. As described above, by forming the cleaning fluid supply hole 272 in the form of a ring, it is possible to uniformly supply the cleaning fluid along the circumference of the thickness measurement unit 250, thereby obtaining an advantageous effect of increasing the cleaning uniformity by the cleaning fluid. You can.

According to another embodiment of the present invention, it is also possible to form a plurality of cleaning fluid supply holes spaced apart along the circumferential direction of the thickness measurement unit, and it is also possible to arrange a plurality of cleaning fluid supply holes on different circumferences. Alternatively, it is also possible to form a cleaning fluid supply hole along the radial direction of the fluid removal pad.

The rotary union 274 is mounted on the fluid removal pad 240 and supplies cleaning fluid to the cleaning fluid supply hole 272 of the fluid removal pad 240 in a state where the fluid removal pad 240 rotates.

As the rotary union 274, a conventional rotary union 274 capable of supplying fluid to a rotating body (eg, a fluid removal pad) may be used, and the present invention is limited by the type and structure of the rotary union 274, or It is not limited.

The thickness measurement unit 250 is provided to measure thickness information of the substrate W from which residual fluid is removed.

Here, measuring thickness information of the substrate W from which the residual fluid has been removed is defined as measuring thickness information of the substrate W on the surface of the substrate W from which the residual fluid has been removed.

Preferably, the thickness measuring unit 250 measures the thickness information of the substrate W in real time while the substrate W is being polished.

The thickness measurement unit 250 may be configured in various structures and methods capable of measuring thickness information of the substrate W, and the present invention is not limited or limited by the structure and measurement method of the thickness measurement unit 250.

For example, as the thickness measuring unit 250, a non-contact sensor that measures the thickness information of the substrate W in a non-contact manner may be used. For example, the non-contact sensor is configured to detect reflected light (or ultrasonic signals, etc.) reflected from the substrate W and measure thickness information of the substrate W.

The thickness measurement unit 250 is mounted on the fluid removal pad 240, and measures the thickness information of the substrate W located below the fluid removal pad 240 on the bottom surface of the fluid removal pad 240.

Preferably, the fluid removal pad 240 is disposed in the forward direction of the polishing pad 232 relative to the substrate W (for example, the first direction) in front of the polishing pad 232, and the thickness measuring unit 250 ) Is mounted on the fluid removal pad 240 and measures the thickness information of the substrate W at the portion to be polished before the polishing pad 232 passes through the portion to be polished of the substrate W.

More preferably, the thickness measurement unit 250 is mounted adjacent to the rotation center of the fluid removal pad 240 than the cleaning fluid supply hole 272. More preferably, the thickness measuring unit 250 is mounted to the center of rotation of the fluid removal pad 240.

As described above, by disposing the thickness measuring unit 250 inside the cleaning fluid supply hole 272 along the radial direction of the fluid removal pad 240, the residual fluid remaining on the bottom surface of the fluid removal pad 240 and Since the cleaning fluid supplied to the bottom surface of the fluid removal pad 240 can be discharged to the outside of the fluid removal pad 240 by centrifugal force caused by rotation of the fluid removal pad 240 without invading the thickness measurement unit 250. , It is possible to minimize the sensing error and measurement error of the thickness measurement unit 250 by residual fluid and cleaning fluid, and obtain an advantageous effect of accurately measuring thickness information of the substrate W.

In addition, the polishing unit 230 is configured to move relative to the substrate W by the gantry unit 20, and the fluid removal pad 240 is also mounted on the gantry unit 20 to the substrate W It is configured to move.

More specifically, the gantry unit 20, the first gantry 30 for moving the polishing unit relative to the substrate W, and the first gantry 30 independently of the substrate W fluid removal It includes a second gantry 40 for moving the pad 240.

The first gentry 30 and the second gentry 40 are configured to move along a guide rail (not shown) disposed along the first direction.

Permanent magnets of N-pole and S-pole are alternately arranged on the guide rail, and the principle of the linear motor capable of precise position control by controlling the current applied to the coils of the first gentry 30 and the second gentry 40 Can be driven by.

For example, the first gentry 30 (or the second gentry) is disposed on both sides of the substrate W with the substrate W interposed therebetween, and the first support is provided to move the guide line along the guide rail. A shaft (not shown) and a second support shaft (not shown), and may include a connecting shaft (not shown) connecting the first and second support shafts, and the polishing unit is capable of linear movement along the second direction. It is mounted on the connecting shaft.

Preferably, referring to Figure 8, the polishing unit 230 and the fluid removal pad 240 is configured to move in opposite directions to each other. In this way, by allowing the polishing unit 230 and the fluid removal pad 240 to move in opposite directions, an advantageous effect of minimizing the decrease in the weight balance of the gantry unit 20 can be obtained.

That is, it is also possible to move the polishing unit and the fluid removal pad in the same direction to each other on the gantry unit, but when the polishing unit and the fluid removal pad move in the same direction to each other on the gantry unit, the weight balance of the gantry unit is distorted. There is a problem. When the weight balance of the polishing unit is distorted, shaking and shaking (vibration) occur largely in the polishing unit, making it difficult to maintain a constant pressing force applied to the substrate during the polishing process, and there is a problem that the surface uniformity of the substrate is lowered.

However, the present invention, by allowing the polishing unit 230 and the fluid removal pad 240 to move in opposite directions, the gantry unit 20 by the movement of the polishing unit 230 and the fluid removal pad 240 Since the weight balance deterioration of can be minimized, it is possible to obtain an advantageous effect of minimizing the shaking and shaking of the polishing unit 230. Therefore, it is possible to maintain a constant pressing force applied to the substrate W during the polishing process and obtain an advantageous effect of increasing the surface uniformity of the substrate W.

In addition, the substrate processing apparatus is mounted on the first gentry 30 and includes a conditioning unit 50 for conditioning the polishing pad 232.

For reference, the condition that the conditioning unit 50 conditions the polishing pad 232 is a microporous surface formed on the surface of the polishing pad 232 by pressing the surface of the polishing pad 232 under a predetermined pressing force and finely cutting the surface. It is defined as modifying to come out.

In other words, the conditioning unit 50 finely cuts the outer surface of the polishing pad 232 to prevent clogging of a large number of foam pores that serve to contain a slurry of abrasive and chemical mixtures on the outer surface of the polishing pad 232 Thus, the slurry filled in the foamed pores of the polishing pad 232 is smoothly supplied to the substrate W.

For example, the conditioning unit 50 includes a conditioner 52 mounted to one end and the other end of the first gentry 30 along the second direction. Thus, by providing a conditioning unit 50 for modifying the polishing pad 232 to the gantry unit 20 for moving the polishing pad 232 with respect to the substrate (W), the modification process of the polishing pad 232 To minimize the movement of the polishing pad 232 for, it is possible to obtain an advantageous effect of improving the degree of design freedom and space utilization.

Of course, in some cases, it is also possible to perform a conditioning process for the polishing pad after moving the polishing pad on which the substrate W has been polished to the outside of the gantry unit (outside the movement path of the polishing pad by the gantry unit). . However, as the movement path of the polishing pad increases, the time required for the polishing pad conditioning process increases, and foreign matter such as slurry remaining in the polishing pad may adhere while the polishing pad moves. Therefore, to minimize the movement of the polishing pad 232 for performing the conditioning process and minimize the adhesion of foreign substances, the polishing pad 232 polished with the substrate W is directly conditioned on the gantry unit 20. It is preferred.

As the conditioner 52, a conventional conditioner 52 capable of modifying the surface of the polishing pad 232 may be used, and the present invention is not limited or limited according to the type and structure of the conditioner 52. For example, the conditioner 52 is rotatably provided, and rotates in contact with the outer surface (bottom surface) of the polishing pad 232. In some cases, it is also possible that diamond particles are attached to the conditioning disk in contact with the polishing pad for micro-cutting of the polishing pad.

The control unit 260 controls polishing parameters of the substrate W based on the thickness information of the substrate W.

Here, the polishing parameter of the substrate W is defined to include all variables influencing the polishing of the substrate W. For example, the polishing parameters of the substrate W include the pressing force of the polishing pad 232 pressing the polishing pad 232 on the substrate W, the rotational speed of the polishing pad 232, and the moving speed of the polishing pad 232. It includes any one or more of.

More specifically, the control unit 260, based on the thickness information of the substrate W measured by the thickness measurement unit, the polishing conditions of the substrate W so that the thickness distribution of the substrate W is accurately polished to the target thickness desired ( For example, the amount of polishing per unit time per region of the substrate) is controlled. Preferably, the control unit 260 adjusts the polishing parameter of the substrate W in real time while the substrate W is being polished.

For reference, the control unit 260 adjusts the polishing parameter in response to the thickness information of the substrate W, based on the thickness information of the substrate W, the pressing force of the polishing pad 232, the polishing pad 232 It is defined to control any one or more of the rotational speed of the, the moving speed of the polishing pad 232.

For example, referring to FIGS. 12 and 13, the control unit 260 has a thickness of the substrate W in the first position where the thickness of the substrate W is the first thickness range T1. Control the pressing force P2 of the polishing pad 232 or the rotational speed V2 of the polishing pad 232 higher than the second position in the second thickness range T2 lower than (V1 (P1)> V2 (P2) ))do.

In the same way, the control unit 260 has a third thickness range in which the thickness of the substrate W is higher than the second thickness range T2 at the second position where the thickness of the substrate W is the second thickness range T2 ( The pressing force P2 of the polishing pad 232 or the rotational speed V2 of the polishing pad 232 is controlled to be lower than in the third position T3) (V1 (P1) <V2 (P2)).

As described above, the present invention can accurately polish the substrate W to the intended thickness by adjusting the polishing parameter of the substrate W based on the thickness information of the substrate W, and the thickness of the substrate W It is possible to obtain an advantageous effect of removing the deviation and increasing the polishing uniformity of the substrate W.

As another example, referring to FIG. 10, the substrate W processing apparatus includes a slurry supply unit 234 for supplying a slurry for chemical polishing while mechanical polishing of the substrate W is performed, wherein the polishing parameter is slurry It includes any one or more of the supply amount, supply time, supply speed, supply temperature.

Referring to FIG. 11, a slurry supply hole 232a through which a slurry is supplied is formed in a central portion of the polishing pad 232. The slurry supplied from the slurry supply unit 234 is discharged to the slurry supply hole 232a through the interior of the carrier head 231 and distributed between the substrate W and the polishing pad 232.

In addition, a slurry discharge groove 232b is formed on the bottom surface of the polishing pad 232, and a discharge path SL through which the slurry is discharged is formed along the slurry discharge groove 232b. Preferably, the slurry discharge groove 232b is formed radially along the radial direction based on the central portion of the polishing pad 232. In this way, by forming the slurry discharge groove 232b radially along the radial direction, an advantageous effect of supplying the slurry uniformly to the bottom surface of the polishing pad 232 can be obtained. In addition, a slurry guide groove 232b 'may be formed on the bottom surface of the polishing pad 232 along a circumferential direction in communication with the slurry discharge groove 232b. In some cases, the slurry discharge groove may be formed in a spiral shape or a comb pattern shape.

The control unit 260 controls one or more of the supply amount of the slurry, the supply time, the supply speed, and the supply temperature based on the thickness information of the substrate W.

As described above, based on the thickness information of the substrate W, the pressing force of the polishing pad 232, the rotation speed of the polishing pad 232, the moving speed of the polishing pad 232, the supply amount of the slurry, the supply time, the supply speed , By controlling any one or more of the supply temperature, it is possible to accurately polish the substrate W to the intended thickness, remove the thickness variation of the substrate W, and quickly end the polishing time of the substrate W. The advantageous effect of precisely controlling can be obtained.

In addition, it is also possible to detect the residual life of the polishing pad 232 and an abnormality in the polishing process based on the thickness information of the substrate W. Since the residual life of the polishing pad 232 can be detected and the polishing pad 232 can be replaced in a timely manner, an advantageous effect of improving polishing efficiency and improving polishing stability and reliability can be obtained.

Meanwhile, referring to FIG. 10, the polishing part 200 includes a retainer 214 provided on the outer surface of the transfer belt 210 so as to surround the periphery of the substrate W.

The retainer 214 polishes at the edge of the substrate W when the polishing pad 232 of the polishing unit 230 enters the inner region of the substrate W from the outer region of the substrate W during the polishing process. Minimizes the phenomenon that the pad 232 is rebounded (a phenomenon that bounces), and a non-abrasive zone at the edge portion of the substrate W due to the rebound phenomenon of the polishing pad 232 (polishing by the polishing pad) It is provided to minimize the area that is not done).

More specifically, the retainer 214 is formed with a substrate receiving portion 214a corresponding to the shape of the substrate W penetrating, and the substrate W is outside the transfer belt 210 inside the substrate receiving portion 214a. It sits on the surface.

In the state in which the substrate W is accommodated in the substrate receiving portion 214a, the surface height of the retainer 214 has a height similar to the surface height of the edge of the substrate W. As described above, by making the outer region of the substrate W (the region of the retainer 214) adjacent to the edge portion of the substrate W and the edge portion of the substrate W have a similar height to each other, the polishing pad during the polishing process While the 232 moves from the outer region of the substrate W to the inner region of the substrate W or from the inner region of the substrate W to the outer region of the substrate W, the inner region of the substrate W It is possible to minimize the rebound phenomenon of the polishing pad 232 according to the height difference between the and the outer region, and it is possible to obtain an advantageous effect of minimizing the occurrence of the non-abrasive region due to the rebound phenomenon.

Preferably, the retainer 214 is formed to have the same thickness range as the substrate W. As described above, by forming the retainer 214 to have the same thickness range as the substrate W, the polishing pad 232 moves from the outer region of the substrate W to the inner region of the substrate W while polishing. An advantageous effect of preventing the occurrence of a rebound phenomenon due to the collision of the pad 232 and the retainer 214 can be obtained.

In addition, a plurality of retainers 214 are provided on the outer surface of the transfer belt 210 along the circulation direction of the transfer belt 210. As described above, by forming a plurality of retainers 214 on the outer surface of the transfer belt 210, there is an advantage that different substrates W can be continuously processed in an in-line manner.

The substrate processing apparatus 10 includes a loading transfer speed in which the loading part 100 transfers the substrate W during the loading transfer process in which the substrate W is transferred from the loading part 100 to the polishing part 200, The transfer belt 210 includes a loading control unit 120 for synchronizing the belt transfer speed for transferring the substrate (W).

More specifically, referring to Figures 5 and 6, the loading control unit 120, once the substrate W is disposed at a predetermined seating start position SP on the transfer belt 210, the loading transfer speed and Synchronize belt feed speed.

Here, the seating start position (SP) in advance to the transfer belt 210 is defined as a position where the substrate (W) can start to be transferred by cyclic rotation of the transfer belt 210, and the seating start position (SP) In, the bonding property between the transfer belt 210 and the substrate W is given. For example, the seating start position SP may be set on one side (or a position adjacent to one side of the substrate receiving portion) of the substrate receiving portion 214a facing the distal end of the substrate W transferred from the loading part 100. .

For reference, the conveying belt 210 is configured to rotate continuously, and when the sensing sensor (not shown) detects the seating point of the substrate W while the conveying belt 210 is rotating, for example, the sensing sensor When the seating start position SP is sensed by the transport belt 210, the substrate W is transferred from the loading part 100 to the seating start position SP to be seated on the transport belt 210.

The sensing sensor can be mounted in various positions according to the required conditions and design specifications. As an example, the detection sensor may detect the start position of the seating while the transfer belt moves through the outer surface of the first roller. In some cases, the sensing sensor may be mounted adjacent to the second roller or may be mounted at other locations, and the present invention is not limited or limited by the position and number of sensing sensors. Alternatively, it is also possible for the detection sensor to detect the end of the retainer.

As a sensing sensor, a conventional contact sensor, a non-contact sensor, a vision sensor, a photo sensor, a color sensor, etc. may be used, and the present invention is not limited or limited by the type and sensing method of the sensing sensor.

In addition, the unloading part 300 is provided to unload the substrate W on which the polishing process is completed in the polishing part 200.

The unloading part 300 may be formed of various structures capable of unloading the substrate W from the polishing part 200, and the present invention is not limited or limited by the structure of the unloading part 300.

For example, the unloading part 300 conveys the substrate W at the same height as the conveyance belt 210, and includes a plurality of unloading conveying rollers 310 spaced apart at predetermined intervals, and a plurality of The substrate W supplied to the upper portion of the unloading transfer roller 310 is transferred cooperatively by a plurality of unloading transfer rollers 310 as the unloading transfer roller 310 rotates. In some cases, it is also possible that the unloading part comprises a circulating belt that circulates and rotates by an unloading transfer roller.

Here, that the unloading part 300 transfers the substrate W at the same height as the transport belt 210 means that the unloading part 300 is disposed at a height that allows bending deformation of the substrate W. It is defined as conveying (W). For example, in a state in which the substrate is projected from the transport belt (a part of the substrate is transported outside the transport belt), the loading part is slightly lower than the transport belt (for example, in consideration of bending deformation due to the weight of the projecting portion of the substrate) , Within 10㎜). However, if the bending deformation of the substrate can be suppressed, the height at which the substrate W is transferred from the unloading part 300 and the height at which the substrate W is seated and transferred at the transfer belt 210 may be the same. have.

Preferably, the substrate is separated from the transfer belt 210 as the transfer belt 210 moves in a direction away from the bottom surface of the substrate W.

This is, in unloading the substrate W having been polished, the substrate W is picked up using a separate pickup device (for example, the substrate W adsorption device), and then the substrate W is unloaded again. This is to reduce the unloading time of the substrate W by excluding the process of laying down the loading part.

More specifically, referring to FIG. 14, the transfer belt 210 is configured to rotate and rotate the substrate W along a predetermined path. Substrate W is the position where the transfer belt 210 starts to move along the rotational path (the location where the transfer belt starts to move along the curved path along the outer surface of the second roller), the transfer belt 210 is It is separated from the transfer belt 210 as it moves in a direction spaced from the bottom surface of the substrate W.

As described above, in a state in which the transport belt 210 transporting the substrate W transports the substrate W for a predetermined period or more, the transport belt 210 is moved in a direction spaced from the bottom surface of the substrate W. By this, it is possible to obtain an advantageous effect of naturally separating the substrate W from the transfer belt 210 without a separate pick-up process.

That is, in order to load the substrate supplied to the loading part into the polishing part, the substrate is picked up from the loading part using a separate pickup device (for example, a substrate adsorption device), and then the substrate is lowered to the polishing part again. Since it had to be placed, there is a problem in that the processing time increases so that the time required to load the substrate takes several seconds to several tens of seconds. Moreover, in order to unload the substrate, which has been polished, to the unloading part, the substrate is picked up from the polishing part using a separate pick-up device (for example, a substrate adsorption device), and then the substrate is again attached to the unloading part. Since it had to be put down, there is a problem in that the processing time increases so that the time required to unload the substrate takes several seconds to several tens of seconds.

However, in the present invention, in a state where the substrate W supplied from the loading part 100 is directly transferred to the transfer belt 210, a polishing process is performed on the substrate W, and the substrate W is transferred to the transfer belt 210 By transferring directly to the unloading part 300 on), an advantageous effect of simplifying the processing process of the substrate W and shortening the processing time can be obtained.

In addition, the present invention excludes a separate pick-up process during loading and unloading of the substrate W, and by allowing the substrate W to be processed in an in-line manner by using a circulating rotating transport belt 210, the substrate ( It is possible to obtain an advantageous effect of simplifying the loading time and unloading process of W) and shortening the time required for loading and unloading the substrate W.

Moreover, in the present invention, since it is not necessary to provide a pick-up device for picking up the substrate W when loading and unloading the substrate W, it is possible to simplify equipment and equipment, and advantageous effect of improving space utilization Can get

In addition, the substrate processing apparatus 10, during the unloading transfer process of transferring the substrate W from the polishing part 200 to the unloading part 300, the transfer belt 210 is a belt for transferring the substrate (W) It includes an unloading control unit 320 for synchronizing the transfer speed and the unloading transfer speed in which the unloading part 300 transfers the substrate W.

For example, referring to FIG. 15, when the unloading control unit 320 detects one end of the substrate W, the unloading transfer speed at the same speed as the belt transfer speed at which the transfer belt 210 transfers the substrate W To synchronize. In some cases, regardless of whether or not one end of the substrate is detected, unloading the substrate into the unloading part by rotating the conveying belt while rotating the unloading conveying roller so that the belt conveying speed and the unloading conveying speed are the same. It is also possible.

In the above-described and illustrated embodiments of the present invention, the transport belt is rotated and rotated along a predetermined path, for example, but in some cases, the transport belt is wound from one direction to another, and it is also possible to transfer the substrate. . (Not shown)

Here, when the conveying belt is wound from one direction to the other, the conveying belt is a reel-to-reel winding method of a conventional cassette tape (wound on the first reel and then back to the second reel) It is defined as moving (winding) along an open loop-shaped movement trajectory in a manner that is wound up with a winding.

At this time, the substrate is in a position where the transfer path of the transfer belt is bent (for example, as shown in FIG. 14, the transfer belt begins to move along a curved path along the outer surface of the roller), and the transfer belt of the substrate It can be separated from the transfer belt as it moves in a direction away from the bottom.

In addition, in the embodiment of the present invention, although the transfer belt 210 is described as an example formed of an endless structure of a ring shape in which one end and the other end are continuously connected, in some cases, the transfer belt is separated from the one end and the other end. It is also possible to form in a possible structure. In a structure in which one end and the other end of the transport belt are separated, one end and the other end of the transport belt may be selectively separated and coupled by a common fastener using a fastening member.

As described above, although described with reference to preferred embodiments of the present invention, those skilled in the art variously modify the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. You will understand that you can change it.

10: substrate processing apparatus 100: loading part
110: loading transfer roller 120: loading control
200: polishing part 201: substrate mounting portion
210: transfer belt 212: roller unit
212a: 1st roller 212b: 2nd roller
214: retainer 214a: substrate receiving portion
220: substrate support 221: support plate
230: polishing unit 231: carrier head
232: polishing pad 234: slurry supply
240: fluid removal pad 250: thickness measuring unit
260: control unit 270: cleaning fluid supply unit
272: cleaning fluid supply hole 274: rotary union
300: unloading part 310: unloading transfer roller
320: unloading control

Claims (25)

A substrate processing apparatus for performing a substrate polishing process,
A substrate mounting portion on which the substrate is mounted;
A polishing unit including a polishing pad moving in contact with the substrate, and polishing the top surface of the substrate;
A fluid removal pad that moves while rotating relative to the substrate and removes residual fluid remaining on the surface of the substrate;
A thickness measurement unit mounted on the fluid removal pad and measuring thickness information of the substrate from which the residual fluid is removed;
A control unit controlling polishing parameters of the substrate based on the thickness information of the substrate;
A substrate processing apparatus comprising a.
According to claim 1,
The residual fluid remaining on the surface of the substrate is discharged to the outside of the fluid removal pad by centrifugal force by rotation of the fluid removal pad,
The thickness measuring unit measures the thickness of the substrate on the bottom surface of the fluid removal pad, characterized in that the substrate processing apparatus.
According to claim 1,
And a cleaning fluid supply unit supplying cleaning fluid to a bottom surface of the fluid removal pad.
According to claim 3,
The cleaning fluid supply unit,
A cleaning fluid supply hole exposed to the bottom surface of the fluid removal pad;
A rotary union mounted on the fluid removal pad and supplying the cleaning fluid to the cleaning fluid supply hole;
A substrate processing apparatus comprising a.
According to claim 4,
The cleaning fluid supply hole is formed on the outside of the thickness measurement portion along the radial direction of the fluid removal pad substrate processing apparatus.
The method of claim 5,
The thickness measurement unit is a substrate processing apparatus, characterized in that mounted to the center of rotation of the fluid removal pad.
According to claim 4,
The cleaning fluid supply hole is a substrate processing apparatus characterized in that it is formed in a ring shape surrounding the circumference of the thickness measurement unit.
According to claim 1,
The thickness measurement unit is a substrate processing apparatus characterized in that the non-contact sensor for measuring the thickness information of the substrate in a non-contact manner.
The method according to any one of claims 1 to 8,
The substrate mounting portion,
A transfer belt provided to be movable along a predetermined path and having the substrate mounted on an outer surface;
A substrate support portion disposed inside the transfer belt and supporting the bottom surface of the substrate with the transfer belt interposed therebetween;
A substrate processing apparatus comprising a.
The method of claim 9,
And a retainer provided to protrude to surround the periphery of the substrate.
The method of claim 9,
The transfer belt transfers the substrate in a first direction,
The polishing unit is a substrate processing apparatus characterized in that while the substrate is being transported along the first direction, the surface of the substrate is polished while reciprocating along a second direction orthogonal to the first direction.
The method of claim 11,
The transport belt rotates circulating along a predetermined path,
The substrate processing apparatus, characterized in that the substrate is transferred in the first direction by the rotational rotation of the transfer belt.
The method of claim 11,
The fluid removal pad reciprocates along the second direction, and the thickness measurement unit measures the thickness information of the substrate while the fluid removal pad reciprocates along the second direction. .
The method according to any one of claims 1 to 8,
The thickness measurement unit measures the thickness of the substrate in real time while the substrate is being polished.
The method according to any one of claims 1 to 8,
The fluid removal pad is disposed in front of the polishing pad along the traveling direction of the polishing pad with respect to the substrate,
The thickness measuring unit measures the thickness of the substrate at the portion to be polished before the polishing pad passes through the portion to be polished of the substrate.
The method according to any one of claims 1 to 8,
The control unit controls the end time of polishing of the substrate based on the thickness information of the substrate.
The method according to any one of claims 1 to 8,
The polishing parameter, the substrate processing apparatus characterized in that it comprises at least one of the pressing force of the polishing pad, the rotational speed of the polishing pad, the moving speed of the polishing pad.
The method of claim 17,
The control unit may press the polishing pad or rotate the polishing pad at a first position in which the thickness of the substrate is in the first thickness range than at a second position in the second thickness range in which the thickness of the substrate is higher than the first thickness range. A substrate processing apparatus characterized by controlling the speed to be low.
The method of claim 17,
The control unit may press the polishing pad or rotate the polishing pad at a second position in which the thickness of the substrate is in a second thickness range than in a third position in a third thickness range in which the thickness of the substrate is lower than the second thickness range. A substrate processing apparatus characterized by controlling a high speed.
The method according to any one of claims 1 to 8,
And a slurry supply unit supplying a slurry for chemical polishing while mechanical polishing is performed on the substrate.
The method of claim 20,
The polishing parameter is a substrate processing apparatus characterized in that it comprises any one or more of the supply amount of the slurry, the supply time, the supply speed, the supply temperature.
The method according to any one of claims 1 to 8,
A gantry unit that moves the polishing unit relative to the substrate,
The fluid measurement pad is a substrate processing apparatus, characterized in that mounted on the gantry unit.
The method of claim 22,
The gantry unit,
A first gentry that moves the polishing unit relative to the substrate;
A second gantry that moves the fluid removal pad relative to the substrate independently of the first gantry;
A substrate processing apparatus comprising a.
The method of claim 23,
The polishing unit and the fluid removal pad substrate processing apparatus, characterized in that to move in opposite directions to each other.
The method of claim 23,
And a conditioning unit mounted on the first gentry and conditioning the polishing pad.

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