KR20200021292A - Substrate supporting module and Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate supporter, capable of supplying purge gas to the rear side of a substrate adsorbed with electrostatic force, and a substrate processing apparatus. The substrate supporter includes: a base including an adsorption electrode formed therein to adsorb and maintain a substrate with electrostatic force; a gas hole formed in the center of the base while penetrating the base vertically to enable the supply of purge gas between the lower surface of the substrate and the upper surface of the base; a groove formed into the shape of a concave flow path on the upper surface of base to lead the purge gas supplied through the gas hole to be spread from the central area of the base to the edge area so as to prevent process gas from flowing into a gap between the lower surface of the substrate and the upper surface of the base; and a plurality of embossing units formed on the upper surface of the base as protruding patterns to support the substrate, and spaced at a predetermined distance to enable the lower surface of the substrate supported on the protruding patterns to be opened between the protruding patterns, thereby leading the purge gas spread through the groove to be spread out of the lower surface of the substrate supported on the protruding patterns through a gap between the protruding patterns.

Description

Substrate supporting module and Substrate processing apparatus

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate support and a substrate processing apparatus, and more particularly, to a substrate support and a substrate processing apparatus capable of supplying a purge gas to a rear surface of a substrate adsorbed by electrostatic force.

In a substrate processing apparatus, a substrate support is used to fix a substrate during processing of the substrate. In general, the substrate support uses an electrostatic chuck that chucks the substrate by using electrostatic force generated between an adsorbate of a conductor or a semiconductor lying on the surface. Since the substrate support directly contacts the substrate and chucks the substrate, contaminants such as particles adhering to the substrate adsorption surface of the substrate support adhere to the lower surface of the substrate, which may cause problems in the substrate processing process. Such contaminants such as particles adhering to the substrate significantly lower the yield of semiconductor devices and the like, which are final products, and can also cause secondary contamination of the manufacturing apparatus used in each step.

As a result, the substrate is supported by embossing protruding from the substrate adsorption surface of the substrate support to reduce the contact area between the substrate adsorption surface of the substrate support and the bottom surface of the substrate. The substrate support which can prevent the lower surface of the surface from being contaminated is used. However, in such a conventional substrate support and substrate processing apparatus, the center region of the substrate support supports the center region of the substrate using embossing protruding from the substrate adsorption surface, and the edge region of the substrate support is ring-shaped on the substrate adsorption surface. The edge region of the substrate is supported by using a seal band which protrudes from the substrate, thereby supporting the substrate in a structure in which the edge region of the lower surface of the substrate is blocked. Therefore, in the process of depositing a metal thin film on the substrate, there is a problem that the electrostatic force to chuck the substrate by the metal thin film deposited on the seal band of the substrate support edge region is reduced. Accordingly, although chucking of the substrate is possible initially, chucking failure occurs as the process accumulates, and there is a problem in that rear arcing occurs due to the chucking failure of the substrate.

The present invention is to solve the various problems including the above problems, supplying a purge gas between the substrate adsorption surface of the substrate support and the lower surface of the substrate supported by embossing, the purge gas to the substrate adsorption surface By forming grooves and embossing to uniformly diffuse at a constant flow rate into the edge region, deposition of the metal thin film in the edge region can be prevented. Accordingly, an object of the present invention is to provide a substrate support and a substrate processing apparatus that can stably chuck a substrate even in the course of accumulating processes and prevent backside arcing. However, these problems are illustrative, and the scope of the present invention is not limited thereby.

According to one aspect of the invention, a substrate support is provided. The substrate support may include a base having an adsorption electrode formed therein so as to adsorb and hold the substrate by an electrostatic force; A gas hole formed to penetrate the base vertically in the center of the base to supply purge gas between an upper surface of the base and a lower surface of the substrate; During the processing of the substrate, the purge gas is formed in a concave flow path shape on the upper surface of the base and supplied through the gas hole so as to block the process gas from flowing between the upper surface of the base and the lower surface of the substrate. A groove for inducing diffusion from the central area of the base to the border area; And a plurality of upper surfaces of the base are formed in a protruding pattern to support the substrate, and the lower surfaces of the substrates supported on the protruding pattern are spaced apart at predetermined intervals so as to be opened between the protruding patterns, and are spread through the grooves. And an embossing for inducing the purge gas to diffuse out of the lower surface of the substrate supported on the protrusion pattern through the protrusion patterns.

In the substrate support, the embossing, the protrusion pattern formed in the central region so as to support the substrate in the central region of the base, a plurality of first intervals in a cylindrical shape having a first diameter on the upper surface of the base First embossing formed to be spaced apart; And a protruding pattern formed in the edge region so as to support the substrate in the edge region of the base, the protruding pattern formed on the top surface of the base to surround the plurality of first embossings, and having a second diameter. And a plurality of second embossings formed to be spaced apart at a second interval.

In the substrate support, the first diameter of the first embossing and the second diameter of the second embossing are formed to be the same size, and the second spacing of the second embossing is the first spacing of the first embossing It can be formed smaller.

In the substrate support, the first embossing is arranged in a triangular or lattice shape with a plurality of the first interval of 19mm to 20mm in the central area of the upper surface of the base, the second embossing, the central axis of the base It may be arranged radially at the second interval by 5 degrees radially as a reference, and arranged in a ring shape surrounding a plurality of the first embossing.

In the substrate support, the first gap of the first embossing and the second gap of the second embossing are formed at the same interval, and the first diameter of the first embossing is the second diameter of the second embossing. It can be formed smaller.

In the substrate support, the first embossing is formed into a cylindrical shape of the first diameter of 2.5mm to 2.6mm, the second embossing is formed into a cylindrical shape of the second diameter of 2.95mm to 3.05mm Can be.

In the substrate support, the groove may include a first center groove formed in an arc shape or a ring shape in the center area of the upper surface of the base and connected to the gas hole; A second center groove formed in a ring shape surrounding the first center groove in the center area of the upper surface of the base; And a rim groove formed in a ring shape surrounding the second center groove in the rim area of the upper surface of the base.

In the substrate support, the groove may include a first connection groove connecting the gas hole and the first center groove; And a plurality of second connection grooves radially conformally disposed with respect to the center axis of the base to connect the first center groove and the second center groove.

In the substrate support, the groove may have a width of 2 mm to 4 mm in cross section and a depth of 50 μm to 100 μm.

According to one aspect of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus includes a process chamber in which an inner space capable of processing a substrate is formed; A substrate support provided in the inner space of the process chamber to support the substrate; And a shower head provided at an upper portion of the process chamber so as to face the substrate support and injecting a process gas toward the substrate support, wherein the substrate support is disposed therein so as to adsorb and hold the substrate by electrostatic force. A base on which an adsorption electrode is formed; A gas hole formed to penetrate the base vertically in the center of the base to supply purge gas between an upper surface of the base and a lower surface of the substrate; During the processing of the substrate, the purge gas is formed in a concave flow path shape on the upper surface of the base and supplied through the gas hole so as to block the process gas from flowing between the upper surface of the base and the lower surface of the substrate. A groove for inducing diffusion from the central area of the base to the border area; And a plurality of upper surfaces of the base are formed in a protruding pattern to support the substrate, and the lower surfaces of the substrates supported on the protruding pattern are spaced apart at predetermined intervals so as to be opened between the protruding patterns, and are spread through the grooves. And an embossing for inducing the purge gas to diffuse out of the lower surface of the substrate supported on the protrusion pattern through the protrusion patterns.

According to the substrate support and the substrate processing apparatus according to the embodiment of the present invention made as described above, the purge gas is supplied between the substrate adsorption surface of the substrate support and the lower surface of the substrate supported by embossing, and purge to the substrate adsorption surface By forming grooves and embossing for uniformly diffusing the gas into the edge region of the substrate at a constant flow rate, deposition of the metal thin film in the edge region can be prevented.

Accordingly, the substrate support can stably chuck the substrate by uniformly maintaining the electrostatic force of the substrate support throughout the process accumulation process, and can prevent the occurrence of arcing on the back side, thereby reducing the occurrence of defects in the substrate during the processing of the substrate, and Substrate processing apparatus can be implemented. Of course, the scope of the present invention is not limited by these effects.

1 and 2 are cross-sectional views schematically showing a substrate support according to an embodiment of the present invention.
3 is a cross-sectional view schematically showing a cross section of the groove of the substrate support of FIGS. 1 and 2.
4 is a graph showing the flow rate of the purge gas flowing between the base upper surface of the substrate support of FIGS. 1 and 2 and the lower surface of the substrate supported by embossing.
5 is a cross-sectional view schematically illustrating a substrate processing apparatus to which the substrate support of FIGS. 1 and 2 is applied.

Hereinafter, various exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art, and the following examples can be modified in many different forms, and the scope of the present invention is as follows. It is not limited to an Example. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings are exaggerated for convenience and clarity of description.

Embodiments of the present invention will now be described with reference to the drawings, which schematically illustrate ideal embodiments of the present invention. In the drawings, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the inventive concept should not be construed as limited to the specific shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacture.

1 and 2 are a plan view and a cross-sectional view schematically showing a substrate support 100 according to an embodiment of the present invention, Figure 3 is a cross-sectional view of the groove 40 of the substrate support 100 of Figures 1 and 2 It is sectional drawing which shows schematically.

First, as shown in FIG. 1, the substrate support 100 according to an embodiment of the present invention may include a base 10, an embossing 20, a gas hole 30, and a groove 40. Can be.

As illustrated in FIGS. 1 and 2, the base 10 may have an adsorption electrode formed therein so as to adsorb and hold the substrate S by the electrostatic force. More specifically, the base 10 is formed of a ceramic sintered body, and is provided in an internal space of the process chamber 200 so as to adsorb and hold the substrate S, and thus, may be rotated based on the central axis of the process chamber 200. Can be installed. At this time, the base 10 is provided with a heater for heating the substrate S, which is heated to a process temperature and adsorbed and held therein, and the substrate S may be deposited or the process of etching the thin film may be constant. Can be heated to temperature.

In addition, the base 10 is a seal band formed to protrude to a height higher than the height of the substrate S seated in a ring shape along the periphery of the edge region A2 in a shape surrounding the seated substrate S. 11 can be formed. More specifically, the seal band 11 is a ring-shaped wall enclosing the periphery of the base 10, and is disposed between the upper surface of the base 10 and the lower surface of the substrate S during the processing of the substrate S. While acting to block the inflow of gas, it may serve to guide the purge gas supplied to the gas hole 30 to be described later to stay in the space between the upper surface of the base 10 and the lower surface of the substrate (S). have.

In addition, the embossing 20 may be formed in a plurality of protrusion patterns on the upper surface of the base 10 to support the substrate S, and the lower surface of the substrate S supported on the protrusion pattern may be opened between the protrusion patterns. Spaced apart from each other, the purge gas diffused through the groove 40 may be induced to diffuse out of the lower surface of the substrate (S) supported on the protrusion pattern through between the protrusion patterns. More specifically, as shown in FIG. 1, the embossing 20 has the protrusion pattern formed in the center area A1 so as to support the substrate S in the center area A1 of the base 10. In the edge area A2 of the first embossing 21 and the base S formed in a cylindrical shape having a first diameter D1 on the upper surface of the base 10 so as to be spaced apart at a first interval S1. In order to support the substrate S, the protruding pattern formed in the edge area A2 is disposed in a shape surrounding the plurality of first embossings 21 on the upper surface of the base 10, and the second diameter D2. It may include a second embossing 22 is formed in a cylindrical shape having a plurality spaced apart at a second interval (S2).

At this time, according to an embodiment of the present invention, the second embossing 22 is formed more densely than the first embossing 21 so that the width between the intervals of the plurality of second embossings 22 is greater than that of the plurality of first embossings 21. The first diameter D1 of the first embossing 21 and the second diameter D2 of the second embossing 22 are formed to have the same size so that the width between the intervals can be made smaller, and the second embossing 22 is formed. The second spacing S2 may be smaller than the first spacing S1 of the first embossing 21.

More specifically, the plurality of first embossing 21 may be disposed in a triangular or lattice shape with a plurality of first intervals S1 of 19 mm to 20 mm in the central area A1 of the upper surface of the base 10. In addition, the second embossing 22 is disposed at an equiangular position at a second interval S2 of about 5 degrees radially with respect to the central axis of the base 10, and has a ring shape surrounding the plurality of first embossings 21. Can be arranged.

Further, according to another embodiment of the present invention, the second embossing 22 is formed more densely than the first embossing 21 so that the width between the intervals of the plurality of second embossings 22 is greater than that of the plurality of first embossings 21. The first interval S1 of the first embossing 21 and the second interval S2 of the second embossing 22 are formed at the same interval so that the width between the intervals can be made smaller, and the first embossing 21 The first diameter D1 may be smaller than the second diameter D2 of the second embossing 22.

More specifically, the first embossing 21 is formed in a cylindrical shape having a first diameter D1 of 2.5 mm to 2.6 mm, and the second embossing 22 has a second diameter D2 of 2.95 mm to 3.05 mm. Can be formed into a cylindrical shape.

As a result, the plurality of second embossings 22 may be arranged at more dense intervals than the plurality of first embossings 21 to form the edge area A2 instead of the conventional seal band structure. . At this time, the contact area between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S can be effectively reduced to prevent contamination of the lower surface of the substrate S with contaminants such as particles or process gas residues. The contact area between the first embossing 21 and the second embossing 22 and the lower surface of the substrate S may be 20% to 24% of the entire area of the substrate S.

1 and 2, at least one gas hole 30 may be formed in the center of the base 10. More specifically, the gas hole 30 may be configured to supply a purge gas between the upper surface of the base 10 and the lower surface of the substrate S supported by the embossing 20 so as to supply the purge gas to the center of the base 10. 10) may be formed to penetrate up and down.

Therefore, the substrate of the substrate support 100 is prevented by preventing the process gas from flowing between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S by the purge gas injected through the gas hole 30. Particles can be prevented from being generated by the residual process gas flowing between the adsorption surface and the lower surface of the substrate S. Accordingly, the particles may be attached to the lower surface of the substrate S to contaminate the substrate S or to prevent the electrostatic force that chucks the substrate S from being lowered.

In addition, as shown in FIGS. 1 and 2, the flow of the purge gas that is injected through the gas hole 30 and flows between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S is effectively controlled. In order to do so, the groove 40 may be formed on the upper surface of the base 10. For example, the groove 40 is a concave flow path in the upper surface of the base 10 so as to block the flow of the process gas between the upper surface of the base 10 and the lower surface of the substrate S during the processing of the substrate (S). The purge gas, which is formed in a shape and supplied through the gas hole 30, may be uniformly diffused at a constant flow rate from the central area A1 of the base 10 to the edge area A2.

More specifically, the groove 40 is formed in an arc shape or a ring shape in the center area A1 of the upper surface of the base 10, and is connected to the gas hole 30 and the first connection groove 31 by a first center. The groove 41 and the edge area of the upper surface of the second center groove 42 and the base 10 which are formed in a ring shape surrounding the first center groove 41 in the center area A1 of the upper surface of the base 10 ( A2) may include a rim groove 43 formed in a ring shape surrounding the second center groove 42.

In addition, the purge gas, which enters the first center groove 41 through the first connecting groove 31 from the gas hole 30 in the center of the base 10, is radially uniform with respect to the center axis of the base 10. The groove 40 is radially conformally disposed with respect to the center axis of the base 10 so as to induce it to spread in the direction of the second center groove 42, and thus, the first center groove 41 and the second center groove 42 are disposed. ) May include a plurality of second connecting grooves 32 for connecting.

For example, the purge gas supplied to the central portion of the base 10 through the gas hole 30 may be formed through a space between the first connecting groove 31 and the first embossing 21 on the upper surface of the base 10. The purge gas diffused into the center groove 41 at the first flow rate and diffused into the first center groove 41 is formed between the second connecting groove 32 and the first embossing 21 on the upper surface of the base 10. The purge gas diffused into the second center groove 41 at the second flow rate through the space and diffused into the second center groove 42 is passed through the space between the first embossing 21 on the upper surface of the base 10. The edge groove 43 may be diffused at a third flow rate.

At this time, the purge gas has the same flow rate value as that of the first flow rate, the second flow rate, and the third flow rate due to the groove 40 structure as described above. It may be induced to diffuse uniformly radially at a constant flow rate from the central area A1 toward the edge area A2.

In addition, the interval of the plurality of second connecting grooves 32 radially conformally disposed with respect to the central axis of the base 10 so that the purge gas can be uniformly radially diffused with respect to the central axis of the base 10. (α) may be preferably 30 to 60 degrees. In addition, as illustrated in FIG. 3, the groove 40 including the first center groove 41, the second center groove 42, and the edge groove 43 has a width W of 2 mm to a cross section thereof. It may be preferably formed to 4mm, the depth (H) is formed to 50㎛ to 100㎛.

Therefore, the substrate support 100 according to the embodiment of the present invention supplies a purge gas between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S supported by the embossing 20, and the substrate The groove 40 and the embossing 20 are formed on the adsorption surface to uniformly diffuse the purge gas into the edge region A2 of the base 10 at a constant flow rate, thereby preventing the deposition of the metal thin film on the edge region A2. Can be.

Therefore, even during the process accumulation process, the electrostatic force of the substrate support 100 can be maintained uniformly, thereby stably chucking the substrate S, and the occurrence of arcing on the rear surface of the substrate S can be prevented to prevent the substrate S from being processed. It may have an effect of reducing the occurrence of defects of the substrate (S). In addition, the pressure of the process gas injected into the gas hole 30 may be measured to determine whether the substrate S is chucked to the substrate support 100. For example, when the process gas injected into the gas hole 30 maintains a high pressure, it is determined that the substrate S is chucked to the substrate support, and when the pressure of the process gas changes to a low level of a predetermined level, the substrate ( It may be determined that S) is de-chucked.

4 is a graph showing the flow rate of the purge gas flowing between the upper surface of the base 10 of the substrate support 100 of FIGS. 1 and 2 and the lower surface of the substrate S supported by the embossing 20.

As shown in FIGS. 4A and 4B, as in the first design, the purge gas supplied through the gas hole 30 is directly connected to the edge groove 43 of the edge region A2 through a connection flow path. In the case of spreading, the flow rate of the purge gas flowing from the center of the base 10 to the edge region A2 is largely varied depending on the position of the base 10.

In addition, as in the third design, the first center groove 41 and the second center groove 42 are connected by a plurality of second connecting grooves 32 that are radially conformally disposed with respect to the center axis of the base 10. When the second center groove 42 and the edge groove 43 are also connected to a plurality of second connection grooves 32 radially equidistant with respect to the center axis of the base 10, as in the first design, the base ( It was shown that the flow rate of the purge gas flowing from the center of the center 10 to the edge region A2 varies depending on the position of the base 10.

However, like the second design and the fourth design, similar to the substrate support 100 according to the embodiment of the present invention, the first center groove 41 and the second center groove 42 form the center axis of the base 10. When connected to a plurality of second connection grooves 32 are radially conformally arranged as a reference, and the edge groove 43 is not connected to a separate connection groove, flows from the center of the base 10 to the border area A2 The flow rate of the purge gas appeared to be very constant regardless of the position of the base 10.

As described above, the substrate support 100 according to the embodiment of the present invention supplies a purge gas between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S supported by the embossing 20. The groove 40 and the embossing 20 are formed on the substrate adsorption surface to uniformly flow the purge gas to the edge region A2 of the base 10 at a constant flow rate, thereby preventing the deposition of the metal thin film on the edge region A2. can do.

Therefore, even during the process accumulation process, the electrostatic force of the substrate support 100 can be maintained uniformly, thereby stably chucking the substrate S, and the occurrence of arcing on the rear surface of the substrate S can be prevented to prevent the substrate S from being processed. It may have an effect of reducing the occurrence of defects of the substrate (S).

5 is a cross-sectional view schematically illustrating the substrate processing apparatus 1000 to which the substrate support 100 of FIGS. 1 and 2 is applied.

As illustrated in FIG. 5, the process chamber 200 may have an internal space capable of processing the substrate S. FIG. More specifically, the process chamber 200 has the internal space formed in a circular shape or a square shape therein, and deposits a thin film on the substrate S supported by the substrate support 100 installed in the internal space. Or etching the thin film may be performed. In addition, a gate G for loading or unloading the substrate S into the internal space may be formed on one side of the process chamber 200. In addition, the shower head 300 may be provided on the process chamber 200 so as to face the substrate support 100 to inject the process gas toward the substrate support 100.

In addition, the substrate support 100, like the substrate support 100 according to an embodiment of the present invention shown in Figures 1 to 3 described above, the inside so as to adsorb and maintain the substrate (S) by the electrostatic force The base 10 penetrates up and down through the center of the base 10 so that purge gas can be supplied between the base 10 where the adsorption electrode is formed at the base 10 and the upper surface of the base 10 and the lower surface of the substrate S. In the gas hole 30 to be formed and during the processing of the substrate S, the upper surface of the base 10 and the lower surface of the substrate S may be recessed in the upper surface of the base 10 so that process gas can be blocked. The groove 40 and the base 10 are formed in a flow path shape to guide the purge gas supplied through the gas hole 30 to be diffused from the center area A1 of the base 10 to the edge area A2. The upper surface of the plurality is formed to protrude in a cylindrical shape to support the substrate (S), The purge gas is disposed so that the purge gas can be evenly spread between the two cylindrical shapes, and the purge gas is diffused and guided from the central area A1 of the base 10 to the edge area A2 through the groove 40. It may include an embossing (20) to guide evenly to the entire area of the).

Therefore, the substrate processing apparatus 1000 according to the embodiment of the present invention supplies a purge gas between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S supported by the embossing 20, By forming the groove 40 for uniformly diffusing the purge gas into the edge region A2 of the base 10 at a constant flow rate on the substrate adsorption surface, deposition of the metal thin film of the edge region A2 can be prevented.

Therefore, even during the process accumulation process, the electrostatic force of the substrate support 100 can be maintained uniformly, thereby stably chucking the substrate S, and the occurrence of arcing on the rear surface of the substrate S can be prevented to prevent the substrate S from being processed. It may have an effect of reducing the occurrence of defects of the substrate (S).

Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

10: base
20: embossing
30: gas hole
40: groove
S: Substrate
A1: center area
A2: border area
100: substrate support
200: process chamber
300: shower head
1000: substrate processing apparatus

Claims (10)

A base having an adsorption electrode formed therein so as to adsorb and hold the substrate by an electrostatic force;
A gas hole formed to penetrate the base vertically in the center of the base to supply purge gas between an upper surface of the base and a lower surface of the substrate;
During the processing of the substrate, the purge gas is formed in a concave flow path shape on the upper surface of the base and supplied through the gas hole so as to block the process gas from flowing between the upper surface of the base and the lower surface of the substrate. A groove for inducing diffusion from the central area of the base to the border area; And
A plurality of upper surfaces of the base are formed in a protrusion pattern to support the substrate, and the bottom surface of the substrate supported on the protrusion pattern is spaced apart at predetermined intervals so as to be opened between the protrusion patterns, and the diffused through the groove. An embossing for inducing purge gas to diffuse out of the lower surface of the substrate supported on the protrusion pattern through the protrusion patterns;
Including, the substrate support. The method of claim 1,
The embossing,
The first protruding pattern formed in the center region is formed in a cylindrical shape having a first diameter on the upper surface of the base so as to support the substrate in the center region of the base, a plurality of first spaced apart at a first interval Embossing; And
In order to support the substrate in the edge region of the base, the protruding pattern formed in the edge region is arranged in a shape surrounding a plurality of the first embossing on the upper surface of the base and has a cylindrical shape having a second diameter. A second embossing formed with a plurality of being spaced apart at a second interval;
Including, the substrate support. The method of claim 2,
Wherein the first diameter of the first embossing and the second diameter of the second embossing are of the same size, and wherein the second spacing of the second embossing is smaller than the first spacing of the first embossing, Substrate support. The method of claim 3, wherein
The first embossing,
A plurality of triangles or grids are disposed in the central region of the upper surface of the base with the first spacing of 19 mm to 20 mm,
The second embossing,
A substrate support according to the center axis of the base is radially arranged at the second interval by 5 degrees, arranged in a ring shape surrounding a plurality of the first embossing. The method of claim 2,
Wherein the first spacing of the first embossing and the second spacing of the second embossing are formed at equal intervals, and wherein the first diameter of the first embossing is formed smaller than the second diameter of the second embossing, Substrate support. The method of claim 5, wherein
The first embossing,
Is formed into a cylindrical shape of the first diameter of 2.5mm to 2.6mm,
The second embossing,
A substrate support, formed into a cylindrical shape of said second diameter of 2.95 mm to 3.05 mm. The method of claim 1,
The groove is
A first center groove formed in an arc shape or a ring shape in the center region of the upper surface of the base and connected to the gas hole;
A second center groove formed in a ring shape surrounding the first center groove in the center area of the upper surface of the base; And
An edge groove formed in a ring shape surrounding the second center groove in the edge area of the upper surface of the base;
Including, the substrate support. The method of claim 7, wherein
The groove is
A first connection groove connecting the gas hole and the first center groove; And
A plurality of second connection grooves radially conformal to the center axis of the base to connect the first center groove and the second center groove;
Including, the substrate support. The method of claim 1,
The groove is
A substrate support, wherein the cross section has a width of 2 mm to 4 mm and a depth of 50 m to 100 m. A process chamber in which an internal space capable of processing the substrate is formed;
A substrate support provided in the inner space of the process chamber to support the substrate; And
And a shower head provided at an upper portion of the process chamber so as to face the substrate support and injecting a process gas toward the substrate support.
The substrate support,
A base having an adsorption electrode formed therein so as to adsorb and hold the substrate by an electrostatic force;
A gas hole formed to penetrate the base vertically in the center of the base to supply purge gas between an upper surface of the base and a lower surface of the substrate;
During the processing of the substrate, the purge gas is formed in a concave flow path shape on the upper surface of the base and is supplied through the gas hole so as to block the process gas from flowing between the upper surface of the base and the lower surface of the substrate. A groove for inducing diffusion from the central area of the base to the border area; And
The plurality of upper surfaces of the base are formed in a protruding pattern to support the substrate, and the lower surface of the substrate supported on the protruding pattern is spaced apart at predetermined intervals so as to be opened between the protruding patterns, and the diffusion is performed through the groove. An embossing for inducing purge gas to diffuse out of the lower surface of the substrate supported on the protrusion pattern through the protrusion patterns;
Substrate processing apparatus comprising a.

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