KR102460310B1 - Substrate supporting module and Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate support and a substrate processing apparatus capable of supplying a purge gas to a rear surface of a substrate adsorbed by an electrostatic force, comprising: a base having an adsorption electrode formed therein to adsorb and hold a substrate by an electrostatic force; In order to supply a purge gas between the upper surface of the base and the lower surface of the substrate, a gas hole formed in the center of the base vertically penetrating the base, and during the processing of the substrate, the upper surface of the base and the substrate A groove formed in a concave flow path shape on the upper surface of the base to prevent the process gas from flowing through the lower surface to induce the purge gas supplied through the gas hole to be diffused from the center region of the base to the edge region and a plurality of protruding patterns are formed on the upper surface of the base to support the substrate, and the lower surface of the substrate supported on the protruding pattern is spaced apart from each other at a predetermined interval to open between the protruding patterns, and diffused through the grooves. Embossing for inducing diffusion of the purge gas out of the lower surface of the substrate supported on the protruding patterns through between the protruding patterns may be included.

Description

Substrate supporting module and Substrate processing apparatus

The present invention relates to a substrate support and a substrate processing apparatus, and more particularly, to a substrate support and a substrate processing apparatus capable of supplying a purge gas to a rear surface of a substrate adsorbed by an electrostatic force.

A substrate support is used to fix a substrate during a substrate processing process in a substrate processing apparatus. In general, the substrate support uses an electrostatic chuck that chucks the substrate by using an electrostatic force generated between the substrate and an adsorbent made of a conductor or a semiconductor placed on the surface. Since such a substrate support chucks the substrate in direct contact with the substrate, contaminants such as particles adhering to the substrate adsorption surface of the substrate support may adhere to the lower surface of the substrate, thereby causing a problem in the substrate processing process. Contaminants such as particles adhering to the substrate remarkably reduce the yield of semiconductor devices, which are final products, and may also cause secondary contamination of manufacturing equipment used in each process.

Accordingly, by reducing the contact area between the substrate adsorption surface of the substrate support and the lower surface of the substrate by supporting the substrate using the embossing protrudingly formed on the substrate adsorption surface of the substrate support, the substrate is caused by contaminants such as particles or process gas residues. A substrate support that can prevent contamination of the lower surface is used. However, in such a conventional substrate support and substrate processing apparatus, the central region of the substrate support supports the central region of the substrate by using embossing formed to protrude from the substrate adsorption surface, and the edge region of the substrate support has a ring shape on the substrate adsorption surface. By supporting the edge region of the substrate using a seal band protruding from the surface, the substrate is supported in a structure in which the edge region of the lower surface of the substrate is blocked. Therefore, in the case of depositing the metal thin film on the substrate, there is a problem in that the electrostatic force for chucking the substrate is reduced by the metal thin film deposited on the seal band of the edge region of the substrate support. Accordingly, although chucking of the substrate is possible in the initial stage, there is a problem in that a chucking defect occurs according to the cumulative progress of the process, and back arcing occurs due to the substrate chucking defect.

The present invention is to solve various problems including the above problems, supplying a purge gas between the substrate adsorption surface of the substrate support and the lower surface of the substrate supported by embossing, and supplying the purge gas to the substrate adsorption surface of the substrate. By forming grooves and embossing for uniform diffusion at a constant flow rate to the edge area, deposition of a metal thin film in the edge area can be prevented. Accordingly, an object of the present invention is to provide a substrate support and a substrate processing apparatus capable of stably chucking a substrate even when a process is accumulated, and preventing a rear arcing from occurring. However, these problems are exemplary, and the scope of the present invention is not limited thereto.

According to one aspect of the present invention, a substrate support is provided. The substrate support may include: a base having an adsorption electrode formed therein to adsorb and hold the substrate by electrostatic force; a gas hole formed in the center of the base to vertically penetrate the base so as to supply a purge gas between the upper surface of the base and the lower surface of the substrate; During the processing of the substrate, the purge gas is formed in a concave flow path shape on the upper surface of the base and supplied through the gas hole to block the inflow of the process gas between the upper surface of the base and the lower surface of the substrate. a groove for inducing diffusion from the center area of the base to the edge area; and a plurality of protruding patterns are formed on the upper surface of the base to support the substrate, and the lower surface of the substrate supported on the protruding pattern is spaced apart from each other at a predetermined interval to open between the protruding patterns, and diffused through the grooves. and embossing to induce the purge gas to diffuse out of the lower surface of the substrate supported on the protrusion patterns through between the protrusion patterns.

In the substrate support, the embossing includes a plurality of cylindrical shapes having a first diameter on the upper surface of the base so that the protrusion pattern formed in the central region can support the substrate in the central region of the base. a first embossing formed to be spaced apart from each other; and the protrusion pattern formed in the rim region is disposed in a shape surrounding the plurality of first embossings on the upper surface of the base so as to support the substrate in the rim region of the base and has a cylindrical shape having a second diameter. It may include; a plurality of second embossing is formed to be spaced apart from the second interval.

In the substrate support, the first diameter of the first embossing and the second diameter of the second embossing are formed to be the same size, and the second spacing of the second embossing is the first spacing of the first embossing It can be formed smaller.

In the substrate support, the first embossing is arranged in a triangular or grid shape with a plurality of first intervals of 19 mm to 20 mm in the central region of the upper surface of the base, and the second embossing is the central axis of the base It may be arranged in a shape of a ring surrounding the plurality of first embossing by being conformally arranged at the second interval of about 5 degrees radially as a reference.

In the substrate support, the first spacing of the first embossing and the second spacing of the second embossing are formed with the same spacing, and the first diameter of the first embossing is the second diameter of the second embossing It can be formed smaller.

In the substrate support, the first embossing is formed in a cylindrical shape of the first diameter of 2.5 mm to 2.6 mm, and the second embossing is formed in a cylindrical shape of the second diameter of 2.95 mm to 3.05 mm. can

In the substrate support, the groove may include: a first central groove formed in an arc shape or a ring shape in the central region of the upper surface of the base and connected to the gas hole; a second central groove formed in a ring shape surrounding the first central groove in the central region of the upper surface of the base; and an edge groove formed in a ring shape surrounding the second central groove in the edge region of the upper surface of the base.

In the substrate support, the groove may include: a first connection groove connecting the gas hole and the first central groove; and a plurality of second connection grooves disposed radially and conformally with respect to the central axis of the base to connect the first central groove and the second central groove.

In the substrate support, the groove may have a width of 2 mm to 4 mm and a depth of 50 μm to 100 μm.

According to one aspect of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus may include: a process chamber in which an internal space capable of processing a substrate is formed; a substrate support provided in the inner space of the process chamber to support the substrate; and a shower head provided at an upper portion of the process chamber to face the substrate support and spraying a process gas toward the substrate support, wherein the substrate support has an inside to adsorb and hold the substrate by electrostatic force. a base on which the adsorption electrode is formed; a gas hole formed in the center of the base to vertically penetrate the base so as to supply a purge gas between the upper surface of the base and the lower surface of the substrate; During the processing of the substrate, the purge gas is formed in a concave flow path shape on the upper surface of the base and supplied through the gas hole to block the inflow of the process gas between the upper surface of the base and the lower surface of the substrate. a groove for inducing diffusion from the center area of the base to the edge area; and a plurality of protruding patterns are formed on the upper surface of the base to support the substrate, and the lower surface of the substrate supported on the protruding pattern is spaced apart from each other at a predetermined interval to open between the protruding patterns, and diffused through the grooves. and embossing to induce the purge gas to diffuse out of the lower surface of the substrate supported on the protrusion patterns through between the protrusion patterns.

According to the substrate support and substrate processing apparatus according to an embodiment of the present invention made as described above, a purge gas is supplied between the substrate adsorption surface of the substrate support and the lower surface of the substrate supported by embossing, and the purge is applied to the substrate adsorption surface. By forming grooves and embossing for uniformly diffusing gas into the edge region of the substrate at a constant flow rate, deposition of the metal thin film in the edge region can be prevented.

Accordingly, it is possible to stably chuck the substrate by maintaining the electrostatic force of the substrate support uniformly throughout the process accumulation process, and to prevent arcing on the back side to reduce the occurrence of defects in the substrate during the substrate processing process; A substrate processing apparatus may be implemented. Of course, the scope of the present invention is not limited by these effects.

1 and 2 are cross-sectional views schematically showing a substrate support according to an embodiment of the present invention.
3 is a cross-sectional view schematically illustrating a cross section of a groove of the substrate support of FIGS. 1 and 2 .
4 is a graph showing a flow rate of a purge gas flowing between the upper surface of the base of the substrate support of FIGS. 1 and 2 and the lower surface of the substrate supported by embossing.
5 is a cross-sectional view schematically illustrating a substrate processing apparatus to which the substrate support of FIGS. 1 and 2 is applied.

Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is as follows It is not limited to an Example. Rather, these embodiments are provided so as to more fully and complete the present disclosure, and to fully convey the spirit of the present invention to those skilled in the art. In addition, in the drawings, the thickness or size of each layer is exaggerated for convenience and clarity of description.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically illustrating ideal embodiments of the present invention. In the drawings, variations of the illustrated shape can be envisaged, for example depending on manufacturing technology and/or tolerances. Accordingly, embodiments of the inventive concept should not be construed as limited to the specific shape of the region shown in the present specification, but should include, for example, changes in shape caused by manufacturing.

1 and 2 are a plan view and a cross-sectional view schematically showing the substrate support 100 according to an embodiment of the present invention, and FIG. 3 is a cross-section of the groove 40 of the substrate support 100 of FIGS. 1 and 2 . is a cross-sectional view schematically showing

First, as shown in FIG. 1 , the substrate support 100 according to an embodiment of the present invention includes a base 10 , an embossing 20 , a gas hole 30 and a groove 40 . can

1 and 2 , the base 10 may have an adsorption electrode formed therein to adsorb and hold the substrate S by electrostatic force. More specifically, the base 10 is formed of a ceramic sintered body, is provided in the inner space of the process chamber 200 to adsorb and hold the substrate S, and is rotatable based on the central axis of the process chamber 200 . can be installed properly. At this time, the base 10 is heated to a process temperature and provided with a heater for heating the substrate S that is adsorbed and maintained therein, so that a process of depositing a thin film on the substrate S or a process of etching the thin film is possible. It can be heated to temperature.

In addition, the base 10 is a seal band formed to protrude to a height higher than the height of the substrate S seated in a ring shape along the outer edge of the edge area A2 in a shape surrounding the seated substrate S. (11) can be formed. More specifically, the seal band 11 is a ring-shaped wall surrounding the periphery of the base 10, and is formed between the upper surface of the base 10 and the lower surface of the substrate S during the processing process of the substrate S. While serving to block the inflow of gas, the purge gas supplied to the gas hole 30 to be described later may serve to induce the purge gas to stay in the space between the upper surface of the base 10 and the lower surface of the substrate S. have.

In addition, the embossing 20 is predetermined so that a plurality of protrusion patterns are formed on the upper surface of the base 10 to support the substrate S, and the lower surface of the substrate S supported on the protrusion patterns is opened between the protrusion patterns. Spaced apart from each other, the purge gas diffused through the grooves 40 may be induced to diffuse out of the lower surface of the substrate S supported on the protrusion patterns through between the protrusion patterns. More specifically, as shown in FIG. 1 , the embossing 20 is the protrusion pattern formed in the central region A1 so as to support the substrate S in the central region A1 of the base 10 . In the rim area A2 of the first embossing 21 and the base S, a plurality of cylindrical shapes having a first diameter D1 on the upper surface of the base 10 are formed to be spaced apart by a first interval S1. To support the substrate S, the protrusion pattern formed in the edge area A2 is disposed in a shape surrounding the plurality of first embossing 21 on the upper surface of the base 10, and the second diameter D2 It may include a plurality of second embossing 22 formed to be spaced apart from each other by a second interval (S2) in a cylindrical shape having a.

At this time, according to an embodiment of the present invention, the second embossing 22 is formed more densely than the first embossing 21 so that the width between the intervals of the plurality of second embossings 22 is that of the plurality of first embossing 21 . The first diameter (D1) of the first embossing (21) and the second diameter (D2) of the second embossing (22) are formed to have the same size, so that they can be formed smaller than the width between the gaps, and the second embossing (22) The second interval (S2) of the first embossing (21) may be formed smaller than the first interval (S1).

More specifically, a plurality of the first embossing 21 may be arranged in a triangular or lattice shape with a first interval S1 of 19 mm to 20 mm in the central region A1 of the upper surface of the base 10 . In addition, the second embossing 22 is equiangularly arranged at a second interval S2 of about 5 degrees radially with respect to the central axis of the base 10, in a ring shape surrounding the plurality of first embossing 21 . can be placed.

In addition, according to another embodiment of the present invention, the second embossing 22 is formed more densely than the first embossing 21 so that the width between the gaps of the plurality of second embossing 22 is of the plurality of first embossing 21 . The first gap (S1) of the first embossing (21) and the second gap (S2) of the second embossing (22) are formed at the same distance to be formed smaller than the width between the gaps, and the first embossing (21) The first diameter D1 may be smaller than the second diameter D2 of the second embossing 22 .

More specifically, the first embossing 21 is formed in a cylindrical shape with a first diameter D1 of 2.5 mm to 2.6 mm, and the second embossing 22 has a second diameter D2 of 2.95 mm to 3.05 mm. ) can be formed in a cylindrical shape.

Accordingly, the plurality of second embossings 22 are arranged at a more dense interval than the plurality of first embossings 21 , so that the edge area A2 can be formed instead of the conventional seal band structure. . At this time, to effectively reduce the contact area between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S, to prevent contamination of the lower surface of the substrate S by contaminants such as particles or process gas residues, The contact area between the first embossing 21 and the second embossing 22 and the lower surface of the substrate S may be preferably 20% to 24% of the total area of the substrate S.

Also, as shown in FIGS. 1 and 2 , at least one gas hole 30 may be formed in the center of the base 10 . More specifically, the gas hole 30 is located in the center of the base 10 so as to supply a purge gas between the upper surface of the base 10 and the lower surface of the substrate S supported by the embossing 20, the base ( 10) may be formed by penetrating up and down.

Accordingly, by preventing the process gas from flowing between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S by the purge gas injected through the gas hole 30 , the substrate of the substrate support 100 is It is possible to prevent the generation of particles by the residual process gas flowing between the adsorption surface and the lower surface of the substrate S. Accordingly, it is possible to prevent the particles from adhering to the lower surface of the substrate S to contaminate the substrate S or from reducing the electrostatic force for chucking the substrate S.

In addition, as shown in FIGS. 1 and 2 , the flow of the purge gas injected through the gas hole 30 and flowing between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S is effectively controlled. To do this, a groove 40 may be formed on the upper surface of the base 10 . For example, the groove 40 is a concave flow path in the upper surface of the base 10 so as to block the inflow of the process gas between the upper surface of the base 10 and the lower surface of the substrate S during the processing process of the substrate S. The purge gas formed in a shape and supplied through the gas hole 30 may be induced to be uniformly diffused at a constant flow rate from the center area A1 to the edge area A2 of the base 10 .

More specifically, the groove 40 is formed in a circular arc shape or a ring shape in the central region A1 of the upper surface of the base 10 , and is connected to the gas hole 30 and the first connection groove 31 by the first center The groove 41, the second central groove 42 formed in a ring shape surrounding the first central groove 41 in the central region A1 of the upper surface of the base 10, and the edge region of the upper surface of the base 10 ( A rim groove 43 formed in a ring shape surrounding the second center groove 42 may be included in A2).

In addition, the purge gas entering the first central groove 41 from the gas hole 30 in the central portion of the base 10 through the first connection groove 31 is uniformly radial with respect to the central axis of the base 10 . The groove 40 is radially equiangular with respect to the central axis of the base 10 so as to be induced to spread in the direction of the second central groove 42 , the first central groove 41 and the second central groove 42 . ) may include a plurality of second connection grooves 32 for connecting them.

For example, the purge gas supplied to the central portion of the base 10 through the gas hole 30 is the first through the space between the first connection groove 31 and the first embossing 21 on the upper surface of the base 10 . The purge gas diffused into the central groove 41 at a first flow rate and diffused into the first central groove 41 is disposed between the second connecting groove 32 and the first embossing 21 of the upper surface of the base 10 . The purge gas diffused into the second central groove 41 through the space at a second flow rate and diffused into the second central groove 42 through the space between the first embossing 21 of the upper surface of the base 10 is It may be diffused at a third flow rate through the edge groove 43 .

At this time, the purge gas has the same flow rate value as the first flow rate, the second flow rate, and the third flow rate due to the structure of the groove 40 as described above, so that the purge gas is removed from the base 10 . It may be induced to spread uniformly radially at a constant flow rate from the center area A1 toward the edge area A2 .

In addition, the spacing of the plurality of second connection grooves 32 that are radially conformal to the central axis of the base 10 so that the purge gas can be uniformly diffused radially with respect to the central axis of the base 10 . (α) may preferably be 30 to 60 degrees. In addition, as shown in FIG. 3 , the groove 40 including the first central groove 41 , the second central groove 42 , and the edge groove 43 has a cross section width W of 2 mm to It may be formed of 4 mm, and it may be preferable that the depth (H) be formed in a range of 50 μm to 100 μm.

Accordingly, the substrate support 100 according to an embodiment of the present invention supplies a purge gas between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S supported by the embossing 20, and the substrate By forming a groove 40 and embossing 20 for uniformly spreading the purge gas at a constant flow rate to the edge area A2 of the base 10 on the adsorption surface, the metal thin film deposition in the edge area A2 can be prevented. can

Therefore, it is possible to stably chuck the substrate S by maintaining the electrostatic force of the substrate support 100 uniformly throughout the process accumulation process, and prevent arcing on the back side of the substrate S during the processing process of the substrate S It may have the effect of reducing the occurrence of defects in the substrate (S). Further, by measuring the pressure of the process gas injected into the gas hole 30 , it may be determined whether the substrate S is chucked on the substrate support 100 . For example, when the process gas injected into the gas hole 30 maintains a high pressure, it is determined that the substrate S is chucked on the substrate support, and when the pressure of the process gas changes to a low pressure of a certain level, the substrate ( It can be determined that S) is de-chucked.

4 is a graph showing the flow rate of the purge gas flowing between the upper surface of the base 10 and the lower surface of the substrate S supported by the embossing 20 of the substrate support 100 of FIGS. 1 and 2 .

As shown in (a) and (b) of Figure 4, as in the first design, the purge gas supplied through the gas hole 30 is directly connected to the edge groove 43 of the edge area A2 through the connection passage. ), it was found that the flow rate of the purge gas flowing from the center of the base 10 to the edge area A2 varies greatly depending on the position of the base 10 .

In addition, as in the third design, the first central groove 41 and the second central groove 42 are connected by a plurality of second connection lubes 32 that are radially and conformally arranged with respect to the central axis of the base 10 and , When the second central groove 42 and the edge groove 43 are also connected by a plurality of second connection grooves 32 that are radially and conformally arranged with respect to the central axis of the base 10, as in the first design, the base ( 10), it was found that the flow rate of the purge gas flowing from the center to the edge area A2 varies according to the position of the base 10 .

However, as in the second design and the fourth design similar to the substrate support 100 according to an embodiment of the present invention, the first central groove 41 and the second central groove 42 are aligned with the central axis of the base 10 . It is connected by a plurality of second connection grooves 32 that are radially arranged conformally as a reference, and when the edge groove 43 is not connected with a separate connection groove, flowing from the center of the base 10 to the edge area A2 It was found that the flow rate of the purge gas was very constant regardless of the position of the base 10 .

As such, the substrate support 100 according to an embodiment of the present invention supplies a purge gas between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S supported by the embossing 20, By forming the groove 40 and the embossing 20 for uniformly flowing the purge gas at a constant flow rate to the edge area A2 of the base 10 on the adsorption surface of the substrate, the metal thin film deposition in the edge area A2 is prevented can do.

Therefore, it is possible to stably chuck the substrate S by maintaining the electrostatic force of the substrate support 100 uniformly throughout the process accumulation process, and prevent arcing on the back side of the substrate S during the processing process of the substrate S It may have the effect of reducing the occurrence of defects in the substrate (S).

5 is a cross-sectional view schematically illustrating the substrate processing apparatus 1000 to which the substrate support 100 of FIGS. 1 and 2 is applied.

As shown in FIG. 5 , the process chamber 200 may have an internal space capable of processing the substrate S. More specifically, in the process chamber 200, the inner space formed in a circular shape or a square shape is formed therein, and a thin film is deposited on the substrate S supported by the substrate support 100 installed in the inner space. Alternatively, a process such as etching the thin film may be performed. In addition, a gate G for loading or unloading the substrate S into the inner space may be formed on one side of the process chamber 200 . In addition, the shower head 300 may be provided in the upper portion of the process chamber 200 to face the substrate support 100 , and may spray the process gas toward the substrate support 100 .

In addition, the substrate support 100 is, like the substrate support 100 according to an embodiment of the present invention shown in FIGS. 1 to 3 described above, to adsorb and hold the substrate S by electrostatic force. In order to supply a purge gas between the base 10 on which the adsorption electrode is formed, and the upper surface of the base 10 and the lower surface of the substrate S, the base 10 is vertically penetrated in the center of the base 10 to In order to block the gas hole 30 formed and the process gas from flowing between the upper surface of the base 10 and the lower surface of the substrate S during the processing process of the substrate S, it is concave in the upper surface of the base 10 . Groove 40 and base 10 that are formed in a flow path and guide the purge gas supplied through the gas hole 30 to be diffused from the center area A1 of the base 10 to the edge area A2. A plurality of protruding cylindrical shapes are formed on the upper surface of the to support the substrate S, and are disposed so that the purge gas can be evenly spread between the plurality of cylindrical shapes, and the center of the base 10 through the groove 40 The embossing 20 may include an embossing 20 that induces the purge gas to be diffused from the area A1 to the edge area A2 to be uniformly diffused to the entire area of the base 10 .

Therefore, the substrate processing apparatus 1000 according to an embodiment of the present invention supplies a purge gas between the substrate adsorption surface of the substrate support 100 and the lower surface of the substrate S supported by the embossing 20, By forming the groove 40 for uniformly diffusing the purge gas at a constant flow rate to the edge area A2 of the base 10 on the adsorption surface of the substrate, deposition of the metal thin film in the edge area A2 can be prevented.

Therefore, it is possible to stably chuck the substrate S by maintaining the electrostatic force of the substrate support 100 uniformly throughout the process accumulation process, and prevent arcing on the back side of the substrate S during the processing process of the substrate S It may have the effect of reducing the occurrence of defects in the substrate (S).

Although the present invention has been described with reference to the embodiment shown in the drawings, which is only exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

10: base
20: embossing
30: gas hole
40: groove
S: substrate
A1: central area
A2: border area
100: substrate support
200: process chamber
300: shower head
1000: substrate processing apparatus

Claims (10)

a base having an adsorption electrode formed therein to adsorb and hold the substrate by electrostatic force;
a gas hole formed in the center of the base to vertically penetrate the base so as to supply a purge gas between the upper surface of the base and the lower surface of the substrate;
During the processing of the substrate, the purge gas is formed in a concave flow path shape on the upper surface of the base and supplied through the gas hole to block the inflow of the process gas between the upper surface of the base and the lower surface of the substrate. a groove for inducing diffusion from the center area of the base to the edge area; and
A plurality of protruding patterns are formed on the upper surface of the base to support the substrate, and the lower surface of the substrate supported on the protruding pattern is spaced apart from each other so as to be opened between the protruding patterns, and is diffused through the groove. Embossing to induce the purge gas to diffuse out of the lower surface of the substrate supported on the protruding pattern through between the protruding patterns;
The groove is
a first central groove formed in an arc shape or a ring shape in the central region of the upper surface of the base and connected to the gas hole;
a second central groove formed in a ring shape surrounding the first central groove in the central region of the upper surface of the base; and
an edge groove formed in a ring shape surrounding the second central groove in the edge area of the upper surface of the base;
Including, a substrate support. The method of claim 1,
The embossing is
In order to support the substrate in the central region of the base, a plurality of the protrusion patterns formed in the central region are formed in a cylindrical shape having a first diameter on the upper surface of the base to be spaced apart from each other at first intervals. embossing; and
In order to support the substrate in the rim region of the base, the protrusion pattern formed in the rim region is disposed in a shape surrounding the plurality of first embossing on the upper surface of the base and has a cylindrical shape having a second diameter. A plurality of second embossing is formed to be spaced apart at a second interval;
Including, a substrate support. 3. The method of claim 2,
The first diameter of the first embossing and the second diameter of the second embossing are formed to be the same size, and the second spacing of the second embossing is formed smaller than the first spacing of the first embossing, substrate support. 4. The method of claim 3,
The first embossing is
A plurality of them are arranged in a triangular or grid shape with the first interval of 19mm to 20mm in the central region of the upper surface of the base,
The second embossing is
The substrate support, which is arranged in a ring shape surrounding the plurality of first embossings, is arranged conformally at the second interval of about 5 degrees radially with respect to the central axis of the base. 3. The method of claim 2,
The first spacing of the first embossing and the second spacing of the second embossing are formed at equal intervals, and the first diameter of the first embossing is formed smaller than the second diameter of the second embossing, substrate support. 6. The method of claim 5,
The first embossing is
It is formed in a cylindrical shape of the first diameter of 2.5mm to 2.6mm,
The second embossing is
A substrate support formed in a cylindrical shape with the second diameter of 2.95 mm to 3.05 mm. delete The method of claim 1,
The groove is
a first connection groove connecting the gas hole and the first central groove; and
a plurality of second connection grooves disposed radially and conformally with respect to the central axis of the base to connect the first central groove and the second central groove;
Including, a substrate support. The method of claim 1,
The groove is
A substrate support having a cross section of 2 mm to 4 mm in width and 50 μm to 100 μm in depth. a process chamber in which an internal space capable of processing a substrate is formed;
a substrate support provided in the inner space of the process chamber to support the substrate; and
and a shower head provided at an upper portion of the process chamber to face the substrate support and spraying a process gas toward the substrate support; and
The substrate support is,
a base having an adsorption electrode formed therein to adsorb and hold the substrate by electrostatic force;
a gas hole formed in the center of the base to vertically penetrate the base so as to supply a purge gas between the upper surface of the base and the lower surface of the substrate;
During the processing of the substrate, the purge gas is formed in a concave flow path shape on the upper surface of the base and supplied through the gas hole to block the inflow of the process gas between the upper surface of the base and the lower surface of the substrate. a groove for inducing diffusion from the center area of the base to the edge area; and
A plurality of protruding patterns are formed on the upper surface of the base to support the substrate, and the lower surface of the substrate supported on the protruding pattern is spaced apart from each other so as to be opened between the protruding patterns, and is diffused through the groove. Embossing to induce the purge gas to diffuse out of the lower surface of the substrate supported on the protruding pattern through between the protruding patterns;
The groove is
a first central groove formed in an arc shape or a ring shape in the central region of the upper surface of the base and connected to the gas hole;
a second central groove formed in a ring shape surrounding the first central groove in the central region of the upper surface of the base; and
an edge groove formed in a ring shape surrounding the second central groove in the edge area of the upper surface of the base;
A substrate processing apparatus comprising a.

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