KR20200015772A - 용량성 미세 구조 - Google Patents

용량성 미세 구조 Download PDF

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Publication number
KR20200015772A
KR20200015772A KR1020207001532A KR20207001532A KR20200015772A KR 20200015772 A KR20200015772 A KR 20200015772A KR 1020207001532 A KR1020207001532 A KR 1020207001532A KR 20207001532 A KR20207001532 A KR 20207001532A KR 20200015772 A KR20200015772 A KR 20200015772A
Authority
KR
South Korea
Prior art keywords
electrode
substrate
layer
dielectric layer
microstructures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020207001532A
Other languages
English (en)
Korean (ko)
Inventor
한누 카텔루스
타우노 베헤-헤이낄레
Original Assignee
테크놀로지안 투트키무스케스쿠스 브이티티 오와이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 테크놀로지안 투트키무스케스쿠스 브이티티 오와이 filed Critical 테크놀로지안 투트키무스케스쿠스 브이티티 오와이
Publication of KR20200015772A publication Critical patent/KR20200015772A/ko
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00698—Electrical characteristics, e.g. by doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/016—Passivation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
KR1020207001532A 2017-06-19 2018-06-15 용량성 미세 구조 Ceased KR20200015772A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20175571 2017-06-19
FI20175571 2017-06-19
PCT/FI2018/050467 WO2018234629A1 (en) 2017-06-19 2018-06-15 Capacitive micro structure

Publications (1)

Publication Number Publication Date
KR20200015772A true KR20200015772A (ko) 2020-02-12

Family

ID=62816591

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207001532A Ceased KR20200015772A (ko) 2017-06-19 2018-06-15 용량성 미세 구조

Country Status (6)

Country Link
US (1) US11548779B2 (https=)
EP (1) EP3642151A1 (https=)
JP (1) JP2020524917A (https=)
KR (1) KR20200015772A (https=)
CN (1) CN110944936A (https=)
WO (1) WO2018234629A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12454454B2 (en) 2022-03-31 2025-10-28 Beijing Boe Optoelectronics Technology Co., Ltd. Electronic device and method of fabricating the same
JP2025030040A (ja) * 2023-08-22 2025-03-07 大熊ダイヤモンドデバイス株式会社 コンデンサ、電気機械器具、及びコンデンサの製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180976B1 (en) 1999-02-02 2001-01-30 Conexant Systems, Inc. Thin-film capacitors and methods for forming the same
US6366186B1 (en) 2000-01-20 2002-04-02 Jds Uniphase Inc. Mems magnetically actuated switches and associated switching arrays
JP3643091B2 (ja) * 2001-06-25 2005-04-27 松下電器産業株式会社 半導体記憶装置及びその製造方法
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
CN1531063A (zh) * 2003-03-14 2004-09-22 中芯国际集成电路制造（上海）有限公 双面容器电容器的制造方法
JP2007157511A (ja) 2005-12-06 2007-06-21 Hitachi Ltd マイクロエレクトロメカニカルシステムを用いたスイッチ
JP5027431B2 (ja) * 2006-03-15 2012-09-19 ルネサスエレクトロニクス株式会社 半導体装置
WO2008010436A1 (en) * 2006-07-19 2008-01-24 Murata Manufacturing Co., Ltd. Electrostatic actuator and method for manufacturing same
JP2008147368A (ja) * 2006-12-08 2008-06-26 Sony Corp 半導体装置
US10266398B1 (en) * 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
JP5202236B2 (ja) 2007-11-13 2013-06-05 株式会社半導体エネルギー研究所 微小電気機械スイッチ及びその作製方法
JP5204066B2 (ja) 2009-09-16 2013-06-05 株式会社東芝 Ｍｅｍｓデバイス
JP5050022B2 (ja) 2009-09-16 2012-10-17 株式会社東芝 Ｍｅｍｓデバイス
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
EP2506282B1 (en) 2011-03-28 2013-09-11 Delfmems RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches
CN103889887B (zh) * 2011-09-02 2017-02-22 卡文迪什动力有限公司 Mems装置锚固
US8592876B2 (en) 2012-01-03 2013-11-26 International Business Machines Corporation Micro-electro-mechanical system (MEMS) capacitive OHMIC switch and design structures
JP5801475B2 (ja) * 2012-04-09 2015-10-28 パイオニア株式会社 静電アクチュエーター、可変容量コンデンサー、電気スイッチおよび静電アクチュエーターの駆動方法
US10029914B2 (en) * 2013-09-06 2018-07-24 Cavendish Kinetics, Inc. Internally generated DFT stepped hysteresis sweep for electrostatic MEMS
JP6357275B2 (ja) * 2014-07-16 2018-07-11 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． ピッチ均一性を有したタイル状ｃｍｕｔダイ
JP2016059191A (ja) * 2014-09-11 2016-04-21 ソニー株式会社 静電型デバイス
JP2016171224A (ja) 2015-03-13 2016-09-23 株式会社東芝 可変容量バンク装置
US20180188127A1 (en) * 2015-06-15 2018-07-05 Teknologian Tutkimuskeskus Vtt Oy Mems capacitive pressure sensor and manufacturing method

Also Published As

Publication number Publication date
US20200180943A1 (en) 2020-06-11
EP3642151A1 (en) 2020-04-29
WO2018234629A1 (en) 2018-12-27
JP2020524917A (ja) 2020-08-20
CN110944936A (zh) 2020-03-31
US11548779B2 (en) 2023-01-10

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