KR20190134327A - Semiconductor resist composition, and method of forming patterns using the composition - Google Patents

Abstract

The present invention relates to a composition for a semiconductor resist, which comprises an organometallic compound represented by chemical formula 1 and a solvent, and to a pattern forming method using the same. The detailed description of the chemical formula 1 is the same as defined in the specification.

Description

Composition for semiconductor resist and pattern formation method using same {SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION}

The present disclosure relates to a composition for a semiconductor resist and a pattern forming method using the same.

As one of the element technologies for manufacturing next-generation semiconductor devices, EUV (extreme ultraviolet light) lithography has attracted attention. EUV lithography is a pattern formation technique that uses EUV light having a wavelength of 13.5 nm as an exposure light source. According to EUV lithography, an extremely fine pattern (for example, 20 nm or less) can be formed in the exposure process of the semiconductor device manufacturing process.

  Implementation of extreme ultraviolet (EUV) lithography requires the development of compatible photoresists that can perform at spatial resolutions of 16 nm or less. Currently, chemically amplified (CA) photoresists are also referred to as resolution, photospeed, and feature roughness, also known as line edge roughness (LER) for next generation devices. Efforts are being made to meet the specifications.

Intrinsic image blur due to acid catalyzed reactions that occur in these polymeric photoresists limits the resolution at small feature sizes, which is an e-beam This has long been known in lithography. Chemically amplified (CA) photoresists are designed for high sensitivity, but because their typical elemental makeup lowers the absorbance of photoresists at wavelengths of 13.5 nm and consequently reduces sensitivity, This can be more difficult under EUV exposure.

Chemically amplified photoresists may also suffer from roughness issues at small feature sizes, and in part due to the nature of acid catalysis processes, resulting in line edge roughness as the photospeed decreases. An increase in LER) has been shown experimentally. Due to the drawbacks and problems of chemically amplified photoresists, there is a need for a new type of high performance photoresists in the semiconductor industry.

One embodiment provides a composition for a semiconductor resist having excellent development properties for an aqueous developer.

Another embodiment provides a pattern forming method using the composition for semiconductor resists.

The composition for a semiconductor resist according to one embodiment includes an organometallic compound and a solvent represented by the following formula (1).

[Formula 1]

In Chemical Formula 1,

R ¹ to R ³ are each independently a substituted or unsubstituted linear or branched C1 to C30 alkyl group, a substituted or unsubstituted straight or branched chain C2 to C30 alkenyl group, a substituted or unsubstituted straight or branched chain C2 To C30 alkynyl group, substituted or unsubstituted C4 to C30 cycloalkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C4 to C30 Is a heteroaryl group, a substituted or unsubstituted C4 to C20 heteroarylalkyl group, and a substituted or unsubstituted C1 to C30 alkylcarbonyl group, and n is an integer of 1 to 10.

In another embodiment, a pattern forming method includes forming an etch target layer on a substrate, applying a composition for semiconductor resist on the etch target layer to form a photoresist layer, and patterning the photoresist layer to form a photoresist pattern. And etching the etching target layer by using the photoresist pattern as an etching mask.

Since the composition for a semiconductor resist according to an embodiment improves developability with respect to the aqueous developer, it may provide a photoresist pattern capable of minimizing the residual film ratio of the dissolved portion while having excellent solubility with respect to the aqueous developer.

1 to 5 are cross-sectional views illustrating a pattern forming method using a composition for a semiconductor resist according to one embodiment.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the present disclosure, description of already known functions or configurations will be omitted for clarity of the gist of the present disclosure.

Parts not related to the description are omitted in order to clearly describe the present disclosure, and like reference numerals designate like elements throughout the specification. In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, so the present disclosure is not necessarily limited to the illustrated.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In the drawings, the thicknesses of some layers and regions are exaggerated for convenience of explanation. When a portion of a layer, film, region, plate, or the like is said to be "on" or "on" another portion, this includes not only when the other portion is "right over" but also when there is another portion in between.

In the present description, "substituted" means a substituent in which the hydrogen atom is selected from the group consisting of a halogen group, a C1 to C30 alkyl group, a C1 to C30 haloalkyl group, a C6 to C30 aryl group, a C1 to C20 alkoxy group, and a combination thereof "Unsubstituted" means that the hydrogen atom remains a hydrogen atom without being substituted with another substituent.

The composition for a semiconductor resist according to an embodiment of the present invention includes an organometallic compound and a solvent.

The organometallic compound is represented by the following general formula (1) in which various ligands are bonded to a central metal atom located at the center.

[Formula 1]

In Chemical Formula 1,

R ¹ to R ³ are each independently a substituted or unsubstituted linear or branched C1 to C30 alkyl group, a substituted or unsubstituted straight or branched chain C2 to C30 alkenyl group, a substituted or unsubstituted straight or branched chain C2 To C30 alkynyl group, substituted or unsubstituted C4 to C30 cycloalkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C4 to C30 Is a heteroaryl group, a substituted or unsubstituted C4 to C20 heteroarylalkyl group, and a substituted or unsubstituted C1 to C30 alkylcarbonyl group, and n is an integer of 1 to 10.

For example, in Formula 1, R ¹ and R ² are each independently a substituted or unsubstituted linear or branched C1 to C30 alkyl group, a substituted or unsubstituted straight or branched chain C2 to C30 alkenyl group, It may be one selected from a substituted or unsubstituted linear or branched C2 to C30 alkynyl group, a substituted or unsubstituted C4 to C30 cycloalkyl group.

For example, R ¹ and R ² may be each independently a linear or branched C1 to C10 alkyl group.

Meanwhile, in Chemical Formula 1, R ³ may be a substituted or unsubstituted straight chain C1 to C10 alkyl group.

Examples of the linear C1 to C10 alkyl group which can be selected from the aforementioned R ¹ to R ³ include methyl, ethyl, propyl, butyl, pentyl, hexyl, octyl and the like.

Examples of the branched C1 to C10 alkyl group which can be selected from R ¹ to R ² described above include n-butyl, isopropyl, tert-butyl, tert-amyl and the like.

However, one embodiment is not limited thereto, and in addition, R ¹ to R ³ of Formula 1 may be variously selected from the group of selectable substituents as described above.

As represented by Formula 1, the organometallic compound according to one embodiment has a metal (tin) -carbon bond from metal-R ¹ and metal-R ² . In addition, the organometallic compound further has two kinds of metal (tin) -oxygen bonds. One of the two kinds of metal (tin) -oxygen bonds is a bond between oxygen and a metal (tin) forming a hydroxyl group, and the other is a bond between oxygen and a metal (tin) forming one or more ethylene oxide repeating units.

In the organometallic oxide according to one embodiment, the hydroxy group may be a position that forms a crosslink with the metal (tin) of the neighboring other organometallic compound. Accordingly, in the organometallic oxide according to one embodiment, two or more organometallic compounds represented by Formula 1 may form a network through crosslinking represented by metal (tin) -oxygen-metal (tin).

In the organometallic oxide according to one embodiment, the at least one ethylene oxide repeating unit serves to improve the hydrophilicity of the organometallic oxide. In the case of the existing organometallic oxide, a carbon-based material having hydrophobicity due to the metal-carbon bond structure is used. Accordingly, a limited hydrophobic organic developer should be used for coating and developing the existing organometallic oxide, and it may be difficult to use an aqueous developer widely used in general organic photosensitive compounds.

However, the organometallic oxide according to an embodiment may secure excellent developability for an aqueous developer by improving the hydrophilicity of the organometallic oxide through an ethylene oxide repeating unit.

In one embodiment, the organometallic oxide in the composition for a semiconductor resist may control the developability of the aqueous developer by adjusting the length of the ethylene oxide repeating unit.

In Formula 1, n may be an integer of 1 or more, for example 2 or more, for example 3 or more, for example 9 or less, for example 8 or less, for example 7 or less, for example For example, an integer from 1 to 10, for example an integer from 2 to 7.

In one embodiment, when n is 0, the organometallic oxide has hydrophobicity, so developability does not appear for an aqueous developer, and when n exceeds 10, the metal content may be too low to decrease sensitivity.

On the other hand, the semiconductor resist composition is represented by the formula (1), it may include one or more different organometallic compounds. One or more organometallic compounds represented by Formula 1, which are different from each other, are organometallic compounds including R ¹ to R ³ that are different from each other in the organometallic compound represented by Formula 1, or have different n values from each other. It may mean. For example, the semiconductor resist composition may be represented by Chemical Formulas 1a to 1d. It may include one or more organometallic compounds selected from the group of compounds represented by.

[Formula 1a]

[Formula 1b]

[Formula 1c]

[Formula 1d]

Meanwhile, the organometallic compound represented by Chemical Formula 1 may be prepared by reacting a first precursor represented by Chemical Formula 2, a second precursor represented by Chemical Formula 3, and a hydroxide salt.

[Formula 2]

[Formula 3]

In Formula 2 and Formula 3, R ¹ , R ² , R ³ and n are the same as in Formula 1, A ¹ to A ³ are each independently selected from hydrogen or halogen, A ¹ Any one of A to ³ may be hydrogen, and at least one of the other two may be halogen.

For example, when A ³ is hydrogen, one of A ¹ and A ² may be hydrogen, the other may be halogen, and A ¹ and A ² may be all halogen.

Examples of the hydroxide salt include sodium hydroxide (NaOH), calcium hydroxide [Ca (OH ₂ )], potassium hydroxide (KOH), and the like.

The first precursor and the second precursor are mixed and stirred in an organic solvent, and then the hydroxide salt is added, mixed and stirred to obtain an organometallic compound represented by Chemical Formula 1.

The organometallic compound may be included in an amount of 0.1 wt% to 10 wt% with respect to the composition for the semiconductor resist. When the organometallic compound is included in the above range, the composition for a semiconductor resist according to an embodiment may exhibit excellent developability with respect to the aqueous developer.

On the other hand, the solvent included in the semiconductor resist composition according to the embodiment may be an organic solvent, for example an alcohol solvent may be used. The alcohol solvent may be, for example, 4-methyl-2-pentanol, but is not limited thereto.

Meanwhile, the semiconductor resist composition according to an embodiment may further include a resin in addition to the above-described organometallic compound and a solvent.

The resin may be a phenol-based resin including at least one aromatic moiety listed in Group 1 below.

[Group 1]

The resin may have a weight average molecular weight of 500 to 20,000.

The resin may be included in an amount of 0.1 wt% to 50 wt% with respect to the total content of the composition for the semiconductor resist.

When the resin is contained in the content range, it may have excellent etching resistance and heat resistance.

The semiconductor resist composition may be removed by dissolving a part of the photoresist film using an aqueous developer during the development process. Accordingly, the residual film ratio of the portion dissolved by the aqueous developer can be minimized, and a fine pattern structure having an excellent aspect ratio can be formed without using an existing hydrophobic organic developer.

More specifically, the composition for a semiconductor resist may improve solubility in an aqueous developing solution and minimize the residual film ratio of the dissolved portion to form a fine pattern structure having an excellent aspect ratio. For example, the residual film ratio of the portion dissolved by the aqueous developer is 0 to 20%, for example 0 to 18%, for example 0 to 16%, for example 0 to 14%, for example 0 to 12 It is possible to form a fine pattern which is%, for example 0-10%, for example 0-8%, for example 0-6%, for example 0-4%, for example 0-2%. Thus, using the composition for a semiconductor resist according to an embodiment, it is possible to implement extreme ultraviolet lithography using an EUV light source of about 13.5nm wavelength.

Further, for example, a fine pattern having a width of 5 nm to 100 nm, for example, a fine pattern having a width of 5 nm to 80 nm, for example, a fine pattern having a width of 5 nm to 70 nm, for example, Fine patterns having a width of 5 nm to 50 nm, for example fine patterns having a width of 5 nm to 40 nm, for example fine patterns having a width of 5 nm to 30 nm, for example fine having a width of 5 nm to 20 nm To form a pattern, a photoresist process using light of 5 nm to 150 nm wavelength, for example, a photoresist process using light of 5 nm to 100 nm wavelength, for example a photo using light of 5 nm to 80 nm wavelength Resist process, for example photoresist process using light of 5 nm to 50 nm wavelength, for example photoresist process using light of 5 nm to 30 nm wavelength, for example using light of 5 nm to 20 nm wavelength Photo You can use the registry process. Therefore, even if the composition for a semiconductor resist according to the embodiment is developed with an aqueous developer, extreme ultraviolet lithography using an EUV light source having a wavelength of about 13.5 nm can be realized.

On the other hand, according to another embodiment, a photoresist film manufactured using the above-described composition for semiconductor resists is provided. The photoresist film may be in the form of the above-described composition for a semiconductor resist, for example, coated on a substrate and cured through a heat treatment process.

Hereinafter, a method of forming a pattern using the above-described composition for semiconductor resists will be described with reference to FIGS. 1 to 5.

1 to 5 are cross-sectional views illustrating a pattern forming method using the composition for a semiconductor resist according to the present invention.

Referring to FIG. 1, first, an etching object is prepared. An example of the etching target may be a thin film 102 formed on the semiconductor substrate 100. Hereinafter, only the case where the etching target is the thin film 102 will be described. The surface of the thin film 102 is pre-cleaned to remove contaminants and the like remaining on the thin film 102. The thin film 102 may be, for example, a semiconductor film such as a silicon nitride film, a polysilicon film, or a silicon oxide film.

Subsequently, the composition for forming the resist underlayer film 104 for forming the resist underlayer film 104 on the surface of the cleaned thin film 102 is coated by applying a spin coating method.

The resist underlayer coating process may be omitted, and a case of coating the resist underlayer film will be described below.

Thereafter, a drying and baking process is performed to form a resist underlayer film 104 on the thin film 102. The baking treatment may be performed at about 100 to about 500 ° C., for example at about 100 to about 300 ° C.

The resist underlayer film 104 is formed between the substrate 100 and the photoresist film 106, so that no radiation is reflected from the interface or interlayer hardmask of the substrate 100 and the photoresist film 106. When scattered into the photoresist region, it is possible to prevent the non-uniformity of the photoresist linewidth and the pattern formation.

Referring to FIG. 2, a photoresist film 106 is formed by coating the above-described composition for semiconductor resist on the resist underlayer film 104. Referring to FIG. 2, a photoresist film 106 is formed by coating the above-described composition for semiconductor resist on the resist underlayer film 104. The photoresist film 106 may be formed by coating the above-described composition for semiconductor resist on the thin film 102 formed on the substrate 100 and then curing the same through a heat treatment process.

More specifically, the step of forming a pattern using the composition for semiconductor resist, the process for applying the above-described semiconductor resist composition on the substrate 100 by spin coating, slit coating, inkjet printing, and the like for the applied semiconductor resist Drying the composition to form the photoresist film 106.

Since the composition for a semiconductor resist has already been described in detail, duplicate description thereof will be omitted.

Subsequently, a first baking process of heating the substrate 100 on which the photoresist film 106 is formed is performed. The first baking process may be performed at a temperature of about 80 ° C to about 120 ° C.

The photoresist film 106 having the first baking process completed may have a thickness of about 5 nm to about 40 nm. According to one embodiment, when the photoresist film 106 has the thickness, it is more advantageous to form a photoresist pattern having a fine width of 20 nm or less.

Referring to FIG. 3, the photoresist film 106 is selectively exposed.

For example, examples of the light that can be used in the exposure process include not only light having short wavelengths such as activating radiation i-line (365 nm), KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), and EUV (Extreme). ultraviolet light; wavelength 13.5 nm), light, such as E-Beam (electron beam), etc. can be used.

For example, the exposure light according to the embodiment may be short wavelength light having a wavelength range of 5 nm to 150 nm, and may be light having high energy wavelengths such as extreme ultraviolet light (EUV) and E-Beam (electron beam). .

For example, the high-energy light having a wavelength, it is possible to use the light source having a dose of 5mJ / cm ² to 200mJ / cm ² exposure the photoresist film.

The exposed region 106a of the photoresist film absorbs the energy provided from the light source to proceed the condensation and aggregation reaction, and the metal-carbon bond in the organometallic compound is reduced by the condensation and aggregation reaction, As the bond increases, a polymer is formed. The exposed area 106a of the photoresist film comprising the formed polymer will have a different solubility than the unexposed area 106b of the photoresist film.

Subsequently, a second baking process is performed on the substrate 100. The second baking process may be performed at a temperature of about 90 ° C to about 200 ° C. After the second baking process is completed, the exposed region 106a of the photoresist film is in a difficult state to be dissolved in a developer.

Referring to FIG. 4, the photoresist pattern 108 is formed by dissolving and removing the unexposed regions 106b of the photoresist film using a developer.

For example, the development may include removing a portion of the photoresist film using an aqueous developer.

Examples of the aqueous developer include quaternary ammonium hydroxides such as methanol, ethanol, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, or a combination thereof.

That is, in one embodiment, the photoresist pattern 108, which is a negative image pattern, may be formed by dissolving and removing the unexposed regions 106b of the photoresist film using the above-described aqueous developer. have.

As described above, the activation radiation is not only light having short wavelengths such as i-line (wavelength 365nm), KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), but also EUV (Extreme UltraViolet; wavelength 13.5 nm), The photoresist pattern 108 formed by exposure with light having a high energy wavelength such as E-Beam (electron beam) may have a width of 5 nm to 100 nm. For example, the photoresist pattern 108 may be formed in a width of 5 nm to 90 nm, 5 nm to 80 nm, 5 nm to 70 nm, 5 nm to 60 nm, 10 nm to 50 nm, 10 nm to 40 nm, 10 nm to 30 nm, and 10 nm to 20 nm in thickness. have.

Subsequently, the resist underlayer film 104 is etched using the photoresist pattern 108 as an etching mask. The organic layer pattern 112 is formed by the etching process as described above.

Referring to FIG. 5, the exposed thin film 102 is etched by applying the photoresist pattern 108 as an etch mask. As a result, the thin film is formed into a thin film pattern 114.

For example, the etching may be performed by dry etching using an etching gas, and the etching gas may be, for example, CHF ₃ , CF ₄ , Cl ₂ , BCl _3, and a mixture thereof.

In the exposure process performed previously, the thin film pattern 114 formed by the exposure process performed using the EUV light source may have a width of 5nm to 100nm. For example, the thin film pattern 114 formed by an exposure process performed using an EUV light source is 5 nm to 90 nm, 5 nm to 80 nm, 5 nm to 70 nm, 5 nm to 60 nm, 10 nm to 50 nm, 10 nm to 40 nm, 10 nm to 30 nm, It may have a width of 10nm to 20nm, more specifically may have a width of 20nm or less.

Hereinafter, the present invention will be described in more detail with reference to the embodiment of the synthesis of the above-described polymer and manufacturing a composition for a semiconductor resist including the same. However, the following examples are not intended to limit the technical scope of the present invention.

Synthesis Example 1

0.120 g (1.00 mmol) of 2- (2-Methoxyethoxy) Ethanol was added to a 30 ml methanol solution of 0.304 g (1.00 mmol) of dibutyltin dichloride, followed by stirring at room temperature for 12 hours. Thereafter, 0.04 mg of sodium hydroxide was further added thereto, followed by stirring for 12 hours. Thereafter, an excess of n-hexene (n-hexane) was added thereto and recrystallized at -78 ° C to obtain 0.34 g of white crystals.

Synthesis Example 2

0.34 g of white crystals were obtained in the same manner as in Synthesis Example 1, except that 0.276 g (1.00 mmol) of Di (iso-propyl) tin dichloride was used instead of dibutyltin dichloride.

Synthesis Example 3

0.34 g of white crystals were obtained through the same method as in Synthesis Example 1, except that 0.350 g (1.0 mmol) of Methoxy-terminated polyethylene glycol was used instead of 2- (2-Methoxyethoxy) Ethanol.

Comparative Synthesis Example

0.26 g of white crystals were obtained in the same manner as in Synthesis Example 1 except that 0.032 g (1.0 mmol) of Methanol was used instead of 2- (2-Methoxyethoxy) Ethanol.

Examples 1 to 3

The white crystals obtained in each of Synthesis Examples 1 to 3 were dissolved in 4-methyl-2-pentanol at a concentration of 1.3 wt%, and filtered through a 0.1 μm PTFE syringe filter for semiconductor resist. The composition was prepared.

Comparative example

Except for using the white crystals obtained in Comparative Synthesis Example instead of Synthesis Example 1, a composition for a semiconductor resist was prepared in the same manner as in Example 1 above.

evaluation

A 4 inch circular silicon wafer with a native-oxide surface was used as the substrate for thin film deposition. The resist composition for semiconductors according to Examples and Comparative Examples was spin-coated on a substrate at 1500 rpm for 30 seconds, and then fired at 100 ° C. for 120 seconds on a hot plate to form a thin film. The thickness of the film after coating and baking was measured by polarimetry, the measured thickness was 23 nm, and the thickness uniformity was 0.8 nm.

Thereafter, 10 mL of tetramethylammonium hydroxide 20% methanol solution was added to 6-inch Petri-Dish, and the coated silicon wafer was dipped for 60 seconds, washed with distilled water for 20 seconds, and dried.

The thickness of the film treated with tetramethylammonium hydroxide 20% methanol solution was also measured by the above-mentioned polarization measurement, and the initial thickness, thickness after treatment and residual film ratio of each film are shown in Table 1 below.

Initial thickness (nm) Thickness after treatment (nm) Residual Rate (%) Example 1 23 1.8 7.8 Example 2 23 2.3 10.0 Example 3 23 2.1 9.1 Comparative example 23 21 91.3

As shown in Table 1, it can be seen that the resist according to the embodiments may be developed by a tetraammonium hydroxide / methanol mixed solution which is an aqueous developer. On the other hand, when the ethylene oxide repeat unit is not included in the organometallic compound as in the comparative example, it can be confirmed that development through the above-described aqueous developer is impossible.

While specific embodiments of the invention have been described and illustrated above, it is to be understood that the invention is not limited to the described embodiments, and that various modifications and changes can be made without departing from the spirit and scope of the invention. It is self-evident to those who have. Therefore, such modifications or variations are not to be understood individually from the technical spirit or point of view of the present invention, the modified embodiments will belong to the claims of the present invention.

100: substrate 102: thin film
104: resist underlayer film 106: photoresist film
108: photoresist pattern 112: organic film pattern
114: thin film pattern

Claims (9)

A composition for a semiconductor resist, comprising an organometallic compound represented by formula (1) and a solvent:
[Formula 1]

In Chemical Formula 1,
R ¹ to R ³ are each independently a substituted or unsubstituted linear or branched C1 to C30 alkyl group, a substituted or unsubstituted straight or branched chain C2 to C30 alkenyl group, a substituted or unsubstituted straight or branched chain C2 To C30 alkynyl group, substituted or unsubstituted C4 to C30 cycloalkyl group, substituted or unsubstituted C6 to C30 aryl group, substituted or unsubstituted C7 to C30 arylalkyl group, substituted or unsubstituted C4 to C30 Heteroaryl group, substituted or unsubstituted C4 to C20 heteroarylalkyl group, and substituted or unsubstituted C1 to C30 alkylcarbonyl group, and
n is an integer of 1-10. In claim 1,
In Chemical Formula 1,
The R ¹ and R ² are each independently a linear or branched C1 to C10 alkyl group, a composition for a semiconductor resist. In claim 2,
The branched C1 to C10 alkyl group is selected from n-butyl, isopropyl, tert-butyl and tert-amyl, the composition for a semiconductor resist. In claim 1,
The organometallic compound comprises at least one selected from the group of compounds represented by the following general formulas (1a) to (1d), a composition for a semiconductor resist.
[Formula 1a]

[Formula 1b]

[Formula 1c]

[Formula 1d]

In claim 1,
The organometallic compound represented by Chemical Formula 1 is prepared by reacting a first precursor represented by Chemical Formula 2, a second precursor represented by Chemical Formula 3, and a hydroxide salt:
[Formula 2]

[Formula 3]

In Chemical Formulas 2 and 3,
R ¹ , R ² , R ³ and n are the same as in Formula 1,
A ¹ to A ³ are each independently any one selected from hydrogen or halogen, wherein any one of A ¹ to A ³ is hydrogen, and at least one of the other two is a halogen. Forming an etching target layer on the substrate;
Forming a photoresist film on the etching target film by applying the composition for a semiconductor resist according to any one of claims 1 to 5;
Patterning the photoresist film to form a photoresist pattern; And
Etching the etching target layer by using the photoresist pattern as an etching mask. In claim 6,
Forming the photoresist pattern is a pattern formation method using light of 5 nm to 150 nm wavelength. In claim 6,
And forming the photoresist pattern includes removing a portion of the photoresist film using an aqueous developer. In claim 8,
The aqueous developer comprises methanol, ethanol, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, or a combination thereof.

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