KR102226430B1 - Semiconductor resist composition, and method of forming patterns using the composition - Google Patents

Abstract

The present description relates to a composition for a semiconductor resist including an organometallic compound represented by the following Formula 1 and a solvent, and a pattern forming method using the same.
[Formula 1]
R _a Sn _a X _b
Specific details for Formula 1 are as defined in the specification.

Description

Composition for semiconductor resist and pattern formation method using the same {SEMICONDUCTOR RESIST COMPOSITION, AND METHOD OF FORMING PATTERNS USING THE COMPOSITION}

The present description relates to a composition for a semiconductor resist and a pattern forming method using the same.

As one of the element technologies for manufacturing next-generation semiconductor devices, EUV (extreme ultraviolet light) lithography is attracting attention. EUV lithography is a pattern forming technique using EUV light having a wavelength of 13.5 nm as an exposure light source. According to EUV lithography, it has been demonstrated that an extremely fine pattern (for example, 20 nm or less) can be formed in an exposure step of a semiconductor device manufacturing process.

Implementation of extreme ultraviolet (EUV) lithography requires the development of compatible photoresists capable of performing at spatial resolutions of 16 nm or less. Currently, traditional chemically amplified (CA) photoresists are the resolution, photospeed, and feature roughness (also called line edge roughness or LER) for next-generation devices. We are working to meet the specifications for

The inherent intrinsic image blur due to acid catalyzed reactions occurring in these polymeric photoresists limits the resolution at small feature sizes, which is the e-beam. It has been known for a long time in lithography. Chemically amplified (CA) photoresists are designed for high sensitivity, but because their typical elemental makeup lowers the absorbance of the photoresists at a wavelength of 13.5 nm, and consequently reduces the sensitivity, in part. It may be more difficult under EUV exposure.

Chemically amplified photoresists can also suffer from roughness issues at small feature sizes and, in part due to the nature of the acid catalytic processes, line edge roughness as the photospeed decreases. LER) has been shown to increase experimentally. Due to the shortcomings and problems of chemically amplified photoresists, there is a need in the semiconductor industry for new types of high performance photoresists.

One embodiment provides a composition for a semiconductor resist capable of forming a pattern having a high aspect ratio by increasing etch resistance.

Another embodiment provides a pattern forming method using the semiconductor resist composition.

The composition for a semiconductor resist according to an embodiment includes an organometallic compound represented by Formula 1 below and a solvent.

[Formula 1]

R _a Sn _a X _b

In Formula 1,

R is a substituted or unsubstituted straight chain or branched C1 to C30 alkyl group, a substituted or unsubstituted straight chain or branched C2 to C30 alkenyl group, a substituted or unsubstituted straight chain or branched C2 to C30 alkynyl group, substituted Or an unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted A ringed C2 to C20 heteroaryl group, a substituted or unsubstituted C4 to C20 heteroarylalkyl group, a substituted or unsubstituted C2 to C30 alkylcarbonyl group, or a combination thereof,

X is selenium (Se) or telelium (Te),

a is an integer from 1 to 12,

b is an integer from 2 to 20.

A method of forming a pattern according to another embodiment includes: forming a layer to be etched on a substrate, forming a photoresist layer by applying the above-described semiconductor resist composition on the layer to be etched, and forming a photoresist pattern by patterning the photoresist layer. And etching the etching target layer using the photoresist pattern as an etching mask.

The composition for a semiconductor resist according to an embodiment has increased etch resistance, and thus a photoresist pattern having a fine width of 20 nm or less and a high aspect ratio may be provided.

1 to 5 are cross-sectional views illustrating a method of forming a pattern using a composition for a semiconductor resist according to an exemplary embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, in describing the present description, a description of a function or configuration that is already known will be omitted in order to clarify the gist of the present description.

In order to clearly describe the present description, parts irrelevant to the description have been omitted, and the same reference numerals are attached to the same or similar components throughout the specification. In addition, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, so the present description is not necessarily limited to the illustrated bar.

In the drawings, the thicknesses are enlarged in order to clearly express various layers and regions. In addition, in the drawings, the thickness of some layers and regions is exaggerated for convenience of description. When a part of a layer, film, region, plate, etc. is said to be "above" or "on" another part, this includes not only the case where the other part is "directly above", but also the case where there is another part in the middle.

The composition for a semiconductor resist according to an embodiment of the present invention includes an organometallic compound and a solvent.

The organometallic compound has various ligands bonded to a central metal atom located at the center, and is represented by the following formula (1).

[Formula 1]

R _a Sn _a X _b

In Formula 1,

R is a substituted or unsubstituted straight chain or branched C1 to C30 alkyl group, a substituted or unsubstituted straight chain or branched C2 to C30 alkenyl group, a substituted or unsubstituted straight chain or branched C2 to C30 alkynyl group, substituted Or an unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted A ringed C2 to C20 heteroaryl group, a substituted or unsubstituted C4 to C20 heteroarylalkyl group, a substituted or unsubstituted C2 to C30 alkylcarbonyl group, or a combination thereof,

X is selenium (Se) or telelium (Te),

a is an integer from 1 to 12,

b is an integer from 2 to 20.

For example, in Formula 1, R may be a linear or branched C1 to C10 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof.

For example, the branched alkyl may be one or more of isopropyl, tert-butyl, or tert-amyl.

However, it is not limited thereto, and in addition to this, R in Formula 1 is, for example, a C3 to C30 cycloalkyl group, such as a C6 to C20 cycloalkyl group, a C6 to C30 aryl group, a C2 to C30 alkylcarbonyl group , For example, it may be a C2 to C10 alkylcarbonyl group.

As represented by Chemical Formula 1, an organometallic compound including a metal (tin)-carbon bond and a metal (tin)-selenium bond, or a metal (tin)-tellurium bond may exhibit extreme ultraviolet light and/or ultraviolet light. It can be absorbed to form polymers with different solubility.

For example, when the organometallic compound absorbs sufficient energy due to secondary electrons formed by absorption of extreme ultraviolet light or extreme ultraviolet light, the organic ligand of the organometallic compound is dissociated, causing destabilization of the metal, and a corresponding condensation and aggregation reaction. Can happen. This condensation agglomeration reaction may be a new metal-selenium or metal-tellurium bond, or a metal-oxo-metal bond by water absorbed from the surrounding atmosphere. Through this reaction, a network between organometallic compounds is formed, and a polymer having a different solubility from the previous organometallic compounds may be formed.

At this time, the dose of the light source of the organic metal compound is required to form the polymer via the condensation and coagulation reaction can be 5mJ / cm ² to 100mJ / cm ^2.

Meanwhile, the composition for a semiconductor resist is represented by Formula 1, but may include at least one different organometallic compound. Represented by the above formula (1), the termed at least one different organometallic compound may mean an organometallic compound containing different R or different X in the organometallic compound represented by formula 1 have. For example, the composition for a semiconductor resist may include two or more kinds of organometallic compounds containing R different from each other. Meanwhile, even if an organometallic compound containing the same R, two or more kinds of organometallic compounds having different numbers of R included in the organometallic compound may be included.

The organometallic compound represented by Formula 1 may be prepared by reacting a first precursor represented by Formula 2 below and a second precursor represented by Formula 3 below.

[Formula 2]

RSnY ₃

[Formula 3]

(R` ₃ Z) ₂ X

In Chemical Formulas 2 and 3,

R and R` are each independently a substituted or unsubstituted linear or branched C1 to C30 alkyl group, a substituted or unsubstituted linear or branched C2 to C30 alkenyl group, a substituted or unsubstituted linear or branched C2 to C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to A C30 heteroalkyl group, a substituted or unsubstituted C2 to C20 heteroaryl group, a substituted or unsubstituted C4 to C20 heteroarylalkyl group, a substituted or unsubstituted C2 to C30 alkylcarbonyl group, or a combination thereof,

X is selenium (Se) or telelium (Te),

Y is a halogen atom,

Z is carbon (C) or silicon (Si).

By mixing and stirring the first precursor and the second precursor in an organic solvent, an organometallic compound represented by Formula 1 may be obtained.

The organometallic compound may be included in an amount of 0.5 wt% to 3 wt% based on the composition for a semiconductor resist. When the organometallic compound is included in the above range, it may have a high contrast with respect to etch resistance.

Meanwhile, the solvent included in the semiconductor resist composition according to the embodiment may be an organic solvent, and for example, an alcohol-based solvent may be used. The alcohol-based solvent may be, for example, 4-methyl-2-pentanol, but is not limited thereto.

The composition for a semiconductor resist according to an embodiment may further include a photoacid generator (PAG). The photoacid generator is a material that is decomposed by light to generate an acid, and is a material used for chemical amplification to improve the photosensitivity of a photoresist. The photoacid generator according to an embodiment may include at least one or more of a diazosulfone-based compound or a triphenylsulfone-based compound.

The photoacid generator may be included in an amount of 0.1 to 20 parts by weight, for example 0.5 to 15 parts by weight, for example 3 to 10 parts by weight, based on 100 parts by weight of the organometallic compound. When the photoacid generator is included within the above content range, development of the resin composition in the exposed portion becomes easy.

In addition, the semiconductor resist composition according to the embodiment may further include a resin, a photopolymerizable monomer, a photopolymerization initiator, a surfactant, and other additives.

The resin may include an acrylic resin.

The acrylic resin is a copolymer of a first ethylenically unsaturated monomer and a second ethylenically unsaturated monomer copolymerizable therewith, and may be a resin including one or more acrylic repeating units.

The resin may be included in an amount of 1% to 20% by weight, such as 3% to 15% by weight, based on the total amount of the composition for a semiconductor resist. When the resin is included within the above range, excellent sensitivity, film residual rate, developability, resolution, and straightness of the pattern can be obtained.

As the photopolymerizable monomer, a monofunctional or polyfunctional ester of (meth)acrylic acid having at least one ethylenically unsaturated double bond may be used.

Since the photopolymerizable monomer has the ethylenically unsaturated double bond, it is possible to form a pattern having excellent heat resistance, light resistance and chemical resistance by causing sufficient polymerization during exposure in the pattern formation process.

The photopolymerizable monomer may be included in an amount of 1% to 20% by weight, such as 1% to 15% by weight, based on the total amount of the composition for a semiconductor resist. When the photopolymerizable monomer is included within the above range, curing occurs sufficiently during exposure in the pattern formation process, resulting in excellent reliability, and excellent heat resistance, light resistance, chemical resistance, resolution and adhesion of the pattern.

Photopolymerization initiators are generally used in semiconductor resist compositions, such as acetophenone-based compounds, benzophenone-based compounds, thioxanthone-based compounds, benzoin-based compounds, triazine-based compounds, oxime-based compounds, and aminoketone-based compounds. Etc. can be used.

In addition to the above compounds, the photoinitiator may be a carbazole-based compound, a diketone-based compound, a sulfonium borate-based compound, a diazo-based compound, an imidazole-based compound, or a biimidazole-based compound.

The photopolymerization initiator may be included in an amount of 0.1% to 5% by weight, for example, 0.3% to 3% by weight, based on the total amount of the semiconductor resist composition. When the photopolymerization initiator is included within the above range, curing occurs sufficiently during exposure in the pattern formation process to obtain excellent reliability, excellent heat resistance, light resistance, chemical resistance, resolution and adhesion of the pattern, and decrease in transmittance due to unreacted initiator Can be prevented.

Surfactants may be, for example, alkylbenzenesulfonic acid salts, alkylpyridinium salts, polyethylene glycols, quaternary ammonium salts, and the like, but are not limited thereto.

The composition for a semiconductor resist according to an embodiment may further include other additives.

The composition for semiconductor resists may contain malonic acid or 3-amino-1,2-propanediol, a leveling agent, a radical polymerization initiator, or Additives of a combination thereof may be included. The amount of these additives used can be easily adjusted according to the desired physical properties.

In addition, the semiconductor resist composition may further use a silane coupling agent as an additive as an adhesion promoter to improve adhesion to the substrate.

In addition, since the organometallic compound has a high sensitivity for a corresponding wavelength region and a high contrast for etching resistance, a fine pattern structure having a width of 20 nm or less can be formed.

More specifically, since the etch resistance of the composition for semiconductor resist is increased, pattern collapse may not occur even when a pattern having a high aspect ratio is formed. Thus, for example, a fine pattern having a width of 5 nm to 100 nm, for example, a fine pattern having a width of 5 nm to 80 nm, for example, a fine pattern having a width of 5 nm to 70 nm, for example, Fine pattern having a width of 5 nm to 50 nm, for example, a fine pattern having a width of 5 nm to 40 nm, for example, a fine pattern having a width of 5 nm to 30 nm, for example, a fine pattern having a width of 5 nm to 20 nm To form a pattern, a photoresist process using light of a wavelength of 5nm to 150nm, for example, a photoresist process using light of a wavelength of 5nm to 100nm, for example, a photoresist process using light of a wavelength of 5nm to 80nm Resist process, for example, a photoresist process using light of a wavelength of 5 nm to 50 nm, for example, a photoresist process using light of a wavelength of 5 nm to 30 nm, for example, using light of a wavelength of 5 nm to 20 nm Can be used in photoresist processes. Therefore, if the composition for a semiconductor resist according to an embodiment is used, extreme ultraviolet lithography using an EUV light source having a wavelength of about 13.5 nm can be implemented.

Meanwhile, according to another embodiment, a photoresist film manufactured using the above-described composition for a semiconductor resist is provided. The photoresist film may be in a form obtained by coating the above-described semiconductor resist composition on a substrate, for example, and then curing it through a heat treatment process.

Hereinafter, a method of forming a pattern using the above-described composition for a semiconductor resist will be described with reference to FIGS. 1 to 5.

1 to 5 are cross-sectional views illustrating a method of forming a pattern using a composition for a semiconductor resist according to the present invention.

Referring to FIG. 1, first, an object to be etched is prepared. An example of the object to be etched may be a thin film 102 formed on the semiconductor substrate 100. Hereinafter, only the case where the object to be etched is the thin film 102 will be described. The surface of the thin film 102 is pre-cleaned in order to remove contaminants and the like remaining on the thin film 102. The thin film 102 may be, for example, a semiconductor film such as a silicon nitride film, a polysilicon film, or a silicon oxide film.

Subsequently, a composition for forming a resist underlayer film for forming the resist underlayer film 104 on the cleaned surface of the thin film 102 is coated by applying a spin coating method.

The resist underlayer coating process may be omitted. Hereinafter, a case of coating the resist underlayer layer will be described.

Thereafter, drying and baking processes are performed to form a resist underlayer 104 on the thin film 102. The baking treatment may be performed at about 100°C to about 500°C, and for example, at about 100°C to about 300°C.

The resist underlayer film 104 is formed between the substrate 100 and the photoresist film 106, so that irradiation rays reflected from the interface between the substrate 100 and the photoresist film 106 or an interlayer hardmask are not intended. In the case of scattering into the uneven photoresist region, it is possible to prevent unevenness of the photoresist linewidth and disturbance of pattern formation.

Referring to FIG. 2, a photoresist film 106 is formed by coating the above-described semiconductor resist composition on the resist underlayer 104. Referring to FIG. 2, a photoresist film 106 is formed by coating the above-described semiconductor resist composition on the resist underlayer 104. The photoresist film 106 may be in a form obtained by coating the above-described semiconductor resist composition on the thin film 102 formed on the substrate 100 and then curing through a heat treatment process.

More specifically, the step of forming a pattern using a composition for a semiconductor resist includes a process of applying the above-described composition for a semiconductor resist on the substrate 100 by spin coating, slit coating, inkjet printing, etc., and for the applied semiconductor resist. It may include a process of drying the composition to form the photoresist film 106.

Since the semiconductor resist composition has already been described in detail, redundant descriptions will be omitted.

Subsequently, a first baking process of heating the substrate 100 on which the photoresist film 106 is formed is performed. The first baking process may be performed at a temperature of about 80°C to about 120°C.

The photoresist layer 106 on which the first baking process has been completed may have a thickness of 5 nm to 20 nm. According to one embodiment, when the photoresist layer 106 has the above thickness, it is more advantageous to form a photoresist pattern having a fine width of 20 nm or less.

3, the photoresist film 106 is selectively exposed.

For example, examples of light that can be used in the exposure process include not only light having a short wavelength such as an activated irradiation i-line (365 nm), a KrF excimer laser (wavelength 248 nm), an ArF excimer laser (wavelength 193 nm), but also EUV (Extreme Light such as ultraviolet (wavelength 13.5 nm), E-Beam (electron beam), etc. can be used.

For example, the exposure light according to an embodiment may be a short wavelength light having a wavelength range of 5 nm to 150 nm, and may be light having a high energy wavelength such as EUV (Extreme ultraviolet; wavelength 13.5 nm), E-Beam (electron beam), etc. .

For example, the high-energy light having a wavelength, it is possible to use the light source having a dose of 5mJ / cm ² to 50mJ / cm ² exposing the photoresist film.

The exposed region 106a of the photoresist film absorbs energy provided from a light source to undergo condensation and aggregation reactions, and metal-carbon bonds in the organometallic compound are reduced by such condensation and aggregation reactions, and metal-selenium As the bond or metal-tellurium bond increases, it forms a polymer. The exposed region 106a of the photoresist film containing the formed polymer has a different solubility than the unexposed region 106b of the photoresist film.

Subsequently, a second baking process is performed on the substrate 100. The second baking process may be performed at a temperature of about 90°C to about 200°C. After the second baking process is completed, the exposed region 106a of the photoresist film becomes difficult to dissolve in the developer.

Referring to FIG. 4, a photoresist pattern 108 is formed by dissolving and removing an unexposed region 106b of the photoresist film using a developer. Specifically, the photoresist pattern 108, which is a negative image pattern, is removed by dissolving and removing the unexposed region 106b of the photoresist film using a developer such as 2-heptanone. ) To form.

As described above, not only light having short wavelengths such as i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), but also EUV (Extreme UltraViolet; wavelength 13.5 nm), as described above, The photoresist pattern 108 formed by exposure to light having a high energy wavelength such as an E-Beam (electron beam) or the like may have a width of 5 nm to 100 nm. For example, the photoresist pattern 108 may be formed in a width of a thickness of 5nm to 90nm, 5nm to 80nm, 5nm to 70nm, 5nm to 60nm, 10nm to 50nm, 10nm to 40nm, 10nm to 30nm, 10nm to 20nm. have.

Subsequently, the resist underlayer 104 is etched using the photoresist pattern 108 as an etching mask. The organic layer pattern 112 is formed by the above etching process.

Referring to FIG. 5, the exposed thin film 102 is etched by applying the photoresist pattern 108 as an etching mask. As a result, the thin film is formed as a thin film pattern 114.

The etching may be performed by dry etching using, for example, an etching gas, and the etching gas may be CHF ₃ , CF ₄ , Cl ₂ , BCl _3, and a mixed gas thereof.

In the exposure process performed above, the thin film pattern 114 formed by the exposure process performed using an EUV light source may have a width of 5 nm to 100 nm. For example, the thin film pattern 114 formed by the exposure process performed using an EUV light source is 5nm to 90nm, 5nm to 80nm, 5nm to 70nm, 5nm to 60nm, 10nm to 50nm, 10nm to 40nm, 10nm to 30nm, It may have a width of 10 nm to 20 nm, and more specifically, may have a width of 20 nm or less.

Hereinafter, the present invention will be described in more detail through examples relating to the synthesis of the above-described polymer and the preparation of a composition for a semiconductor resist including the same. However, the technical limitation of the present invention is not limited by the following examples.

Synthesis example

0.282 g (1.00 mmol) of A (trichlorostannylbutane), CH ₃ (CH ₂ ) ₃ SnCl ₃ ) in a 30 ml dichloromethane solution of 0.676 g (3.00 mmol) of B (Bis(trimethylsilyl) selenide, ((CH ₃ ) ₃ Si) ₂ Se) was added and then stirred at room temperature for 24 hours. Thereafter, 30 ml of n-hexene (n-hexane) was added to obtain 0.61 g of tin cluster colorless crystals.

Example

The crystal obtained in Synthesis Example was dissolved in 4-methyl-2-pentanol at a concentration of 1.3 wt%, and filtered through a 0.1 μm PTFE syringe filter to prepare a composition for semiconductor resist.

evaluation

A 4 inch circular silicon wafer with a native-oxide surface was used as a substrate for thin film deposition. The semiconductor resist composition according to the embodiment was spin-coated on a substrate at 1500 rpm for 30 seconds, and then baked on a hot plate at 100° C. for 120 seconds to form a thin film. The thickness of the film after coating and baking was measured by ellipsometry, and the measured thickness was 23 nm.

A straight array of 50 circular pads with a diameter of 500 μm was projected onto a resist-coated wafer using EUV light (Lawrence Berkeley National Laboratory Dose Calibration Tool, MET). The pad exposure time was adjusted so that the EUV increased dose was applied to each pad.

Then, the exposed film was fired (post-exposure bake, PEB) by exposure at 180° C. for 120 seconds on a hotplate. The exposed film was immersed in a developer (2-heptanone) for 30 seconds each and washed with the same developer for an additional 15 seconds to form a negative tone image, i.e., to remove the unexposed coated portion.

Finally, the process was terminated by firing a hot plate at 150° C. for 2 minutes. The residual resist thickness of the exposed pad was measured using a polarization measurement method (Ellipsometer). The remaining thickness for each exposure amount was measured and graphed as a function of the exposure amount, and Dg and contrast for each type of resist were shown in Table 1 below.

developer D _g (mJ/cm ² ) Contrast Example 2-heptanone 18.1 8

In the above, although specific embodiments of the present invention have been described and illustrated, the present invention is not limited to the described embodiments, and various modifications and variations can be made without departing from the spirit and scope of the present invention. It is self-evident to those who have. Therefore, such modifications or variations should not be individually understood from the technical spirit or point of view of the present invention, and the modified embodiments should be said to belong to the claims of the present invention.

100: substrate 102: thin film
104: resist underlayer film 106: photoresist film
108: photoresist pattern 112: organic film pattern
114: thin film pattern

Claims (9)

A composition for a semiconductor resist comprising an organometallic compound represented by the following Formula 1 and a solvent:
[Formula 1]
R _a Sn _a X _b
In Formula 1,
R is a substituted or unsubstituted straight chain or branched C1 to C30 alkyl group, a substituted or unsubstituted straight chain or branched C2 to C30 alkenyl group, a substituted or unsubstituted straight chain or branched C2 to C30 alkynyl group, substituted Or an unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, substituted or unsubstituted A ringed C2 to C20 heteroaryl group, a substituted or unsubstituted C4 to C20 heteroarylalkyl group, a substituted or unsubstituted C2 to C30 alkylcarbonyl group, or a combination thereof,
X is selenium (Se) or telelium (Te),
a is an integer from 1 to 12,
b is an integer from 2 to 20. In claim 1,
In Formula 1,
R is a linear or branched C1 to C10 alkyl group, a composition for a semiconductor resist. In claim 1,
The branched alkyl is at least one of isopropyl, tert-butyl, or tert-amyl, a composition for a semiconductor resist. In claim 1,
The organometallic compound is supplied with energy by a light source to form a polymer having a different solubility. In claim 4,
The light source has ^{a dose of 5 mJ / cm 2} to 100 mJ / cm 2, a composition for a semiconductor resist. In claim 1,
The organometallic compound represented by Formula 1 is prepared by reacting a first precursor represented by Formula 2 below and a second precursor represented by Formula 3 below:
[Formula 2]
RSnY ₃
[Formula 3]
(R` <sub>3</sub> Z) <sub>2</sub> X
In Chemical Formulas 2 and 3,
R and R` are each independently a substituted or unsubstituted linear or branched C1 to C30 alkyl group, a substituted or unsubstituted linear or branched C2 to C30 alkenyl group, a substituted or unsubstituted linear or branched C2 To C30 alkynyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 A heteroalkyl group of, a substituted or unsubstituted C2 to C20 heteroaryl group, a substituted or unsubstituted C4 to C20 heteroarylalkyl group, a substituted or unsubstituted C2 to C30 alkylcarbonyl group, or a combination thereof,
X is selenium (Se) or telelium (Te),
Y is a halogen atom,
Z is carbon (C) or silicon (Si). Forming a layer to be etched on the substrate;
Forming a photoresist film by applying the composition for a semiconductor resist according to any one of claims 1 to 6 on the etching target film;
Forming a photoresist pattern by patterning the photoresist film; And
And etching the target layer to be etched using the photoresist pattern as an etching mask. In clause 7,
The step of forming the photoresist pattern is a pattern forming method using light having a wavelength of 5 nm to 150 nm. In clause 7,
Step 5mJ / cm ² to 50mJ / using a light source with a dose of ² cm, a pattern forming method comprising the step of exposing the photoresist film to form the photoresist pattern.

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