KR20190129307A - Wafer carrier and control method thereof - Google Patents

Abstract

Disclosed in the present invention are a substrate carrier and a control method thereof. According to one embodiment of the present invention, the substrate carrier includes: a carrier head; a membrane connected to the carrier head and forming a plurality of pressure chambers applying pressure to a grasped substrate; and a pressure control unit controlling the pressure of the pressure chamber, wherein the pressure control unit can selectively control the pressure of at least a part of the plurality of pressure chambers.

Description

Substrate Carrier and Control Method {WAFER CARRIER AND CONTROL METHOD THEREOF}

The following embodiment relates to a substrate carrier and a control method thereof.

In the manufacture of semiconductor devices, chemical mechanical polishing (CMP) operations including polishing, buffing and cleaning are required. The semiconductor device has a multilayer structure, and a transistor device having a diffusion region is formed in the substrate layer. In the substrate layer, the connecting metal line is patterned and electrically connected to the transistor element forming the functional element. As is known, the patterned conductive layer is insulated from other conductive layers with an insulating material such as silicon dioxide. As more metal layers and associated insulating layers are formed, the need to flatten the insulating material increases. Without flattening, the production of additional metal layers is substantially more difficult due to the large variations in surface morphology. In addition, the metal line pattern is formed of an insulating material, the metal CMP operation to remove the excess metal.

The CMP operation performs a process of physically polishing the surface of the substrate through the polishing pad. In order to grind the substrate through the polishing pad, a substrate holding apparatus for maintaining the position of the substrate is required. The substrate holding apparatus repeatedly performs a chucking operation of holding a substrate that needs to be polished, a polishing operation of bringing the held substrate into contact with a polishing pad, and a dechucking operation of leaving the substrate having been polished. The above-described series of operations are performed by adjusting the pressure applied to the substrate. The pressure applied to the substrate is generally determined through the pressure chamber in the substrate holding apparatus. Since the pressure applied to the substrate is different for each part, the substrate may be bent during chucking, polishing, and dechucking of the substrate. The warpage of the substrate lowers the polishing uniformity of the substrate and can eventually cause serious damage to the substrate. Therefore, there is a need for an apparatus for preventing the bending of the substrate in the process of maintaining the position of the substrate.

An object of the present invention is to provide a substrate carrier and a control method thereof to prevent the phenomenon of bending of the substrate by individually adjusting the pressure applied to each region of the substrate.

An object according to an embodiment is to provide a substrate carrier for efficiently holding a substrate by additionally adjusting the pressure fluctuation of the pressure chamber of a plurality of pressure chambers and a control method thereof.

In one embodiment, a substrate carrier includes: a carrier head; A membrane connected to the carrier head and forming a plurality of pressure chambers to apply pressure to the held substrate; And a pressure controller configured to adjust the pressure of the pressure chamber, wherein the pressure controller may selectively adjust the pressure of at least some of the plurality of pressure chambers.

In one side, the pressure adjusting unit may maintain the pressure of at least one pressure chamber of the plurality of pressure chambers, it is possible to adjust the pressure of the remaining pressure chamber.

In one side, in the process of dechucking the substrate from the membrane, the pressure regulator may increase the pressure of some of the plurality of pressure chambers, and maintain the pressure of the remaining pressure chamber.

In one side, the pressure adjusting unit, in the dechucking process of the substrate, to set a profile for the local bending of the substrate, based on the set profile to adjust the pressure of the pressure chamber corresponding to the substrate portion close to the membrane based on the set profile Can be raised.

In one side, in the process of chucking the substrate to the membrane, the pressure regulator may reduce the pressure of some of the plurality of pressure chambers, and maintain the pressure of the remaining pressure chamber.

In one side, the pressure adjusting unit may set a profile for local bending of the substrate, and individually adjust the degree of pressure change of the plurality of pressure chambers based on the set profile.

In one side, the pressure adjusting unit, when the pressure of the plurality of pressure chamber is reduced to a set pressure, the pressure of a part of the pressure chamber is reduced to less than the set pressure, the pressure of the plurality of pressure chamber to the set pressure When pressurized, the pressure in some pressure chambers may be pressurized to exceed the set pressure.

In one side, the pressure adjusting unit, and sets the reference interval for the interval between the membrane and the substrate, the interval between each membrane portion and the substrate corresponding to the plurality of pressure chambers less than the predetermined interval from the reference interval The pressure of the pressure chamber can be adjusted to be maintained at.

The pressure regulator may generate pressure fluctuations in at least some of the pressure chambers of the plurality of pressure chambers.

In one side, a first pressure and a second pressure higher than the first pressure may be repeatedly applied to the pressure chamber.

In one side, the pressure chamber may change the pressure within a set range based on the set pressure.

In one side, the set pressure may be intermittently applied to the pressure chamber.

In one embodiment, a substrate carrier includes: a carrier head on which a substrate is held; A membrane connected to the carrier head to form a plurality of pressure chambers that apply local pressure to the non-abrasive surface of the gripped substrate; A retainer ring connected to the carrier head to surround the gripped substrate; And it may include a pressure adjusting unit for individually adjusting the pressure of each of the plurality of pressure chambers.

In one side, the pressure adjusting unit, in the dechucking process of the substrate, while raising the pressure of the plurality of pressure chambers, it is possible to differently adjust the degree of pressure rise of each pressure chamber.

The substrate carrier may further include a detector configured to detect a degree of warpage of the substrate, and the detector may detect a gap between the membrane and a substrate portion corresponding to each of the pressure chambers.

In one side, the pressure adjusting unit may set a reference interval for the interval between the substrate and the membrane, and may increase the pressure of the pressure chamber corresponding to the substrate portion corresponding to less than the reference interval.

According to one or more exemplary embodiments, a method of controlling a substrate carrier including a membrane forming a plurality of pressure chambers for applying pressure to respective portions of a gripped substrate may include: increasing pressure of the plurality of pressure chambers; Detecting a degree of warpage of the substrate according to the pressure rise; It may include the step of raising the pressure of some of the plurality of pressure chambers.

The method of claim 1, wherein the detecting of the degree of warpage of the substrate comprises: setting a reference interval for a gap between the membrane and the substrate; And detecting a substrate portion corresponding to less than the reference interval.

In one side, the step of increasing the pressure of the portion of the plurality of pressure chamber, while maintaining the pressure of the portion of the plurality of pressure chamber, it is possible to increase the pressure of the remaining pressure chamber.

The substrate carrier and the method of controlling the same according to an exemplary embodiment may prevent the bending of the substrate by individually adjusting the pressure applied to each region of the substrate.

The substrate carrier and the control method thereof according to an exemplary embodiment may further grip the substrate by additionally adjusting the pressure fluctuations of the pressure chambers of some of the plurality of pressure chambers.

The effect of the substrate carrier and its control method according to an embodiment is not limited to those mentioned above, other effects that are not mentioned will be clearly understood by those skilled in the art from the following description.

The following drawings, which are attached to this specification, illustrate one preferred embodiment of the present invention, and together with the detailed description thereof, serve to further understand the technical idea of the present invention. It should not be construed as limited.
1 is a cross-sectional view of a substrate carrier according to an embodiment.
2 and 3 are operation diagrams showing a state in which the substrate is chucked to the substrate carrier according to an embodiment.
4 and 5 are operation diagrams illustrating a state in which a substrate is dechucked in the substrate carrier according to an exemplary embodiment.
FIG. 6 is an operation diagram illustrating a state in which a substrate carrier exerts pressure on each portion of a substrate according to an embodiment.
7 is a flowchart of a method of controlling a substrate carrier, according to an exemplary embodiment.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. In adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible even though they are shown in different drawings. In addition, in describing the embodiment, when it is determined that the detailed description of the related well-known configuration or function interferes with the understanding of the embodiment, the detailed description thereof will be omitted.

In addition, in describing the components of the embodiment, terms such as first, second, A, B, (a), and (b) may be used. These terms are only for distinguishing the components from other components, and the nature, order or order of the components are not limited by the terms. If a component is described as being "connected", "coupled" or "connected" to another component, that component may be directly connected or connected to that other component, but between components It will be understood that may be "connected", "coupled" or "connected".

Components included in any one embodiment and components including common functions will be described using the same names in other embodiments. Unless stated to the contrary, the description in any one embodiment may be applied to other embodiments, and detailed descriptions thereof will be omitted in the overlapping range.

1 is a cross-sectional view of a substrate carrier according to an embodiment.

The substrate carrier according to an embodiment may be used in a polishing process of the substrate (W).

The substrate W may be a silicon wafer for manufacturing a semiconductor device. However, the type of substrate W is not limited thereto. For example, the substrate W may include a glass for a flat panel display device (FPD) such as a liquid crystal display (LCD) and a plasma display panel (PDP). Meanwhile, in the drawings, the substrate W is illustrated as having a circular shape, but this is only an example for convenience of description and the shape of the substrate W is not limited thereto.

The substrate carrier according to an embodiment may grip the substrate W to polish the substrate W. FIG. The substrate carrier may hold the substrate W that needs to be polished and transfer the held substrate W to the polishing position. The substrate carrier may polish the substrate W by bringing the substrate W transferred to the polishing position into contact with the polishing pad. The substrate carrier can adjust the degree of polishing of the substrate W by pressing the substrate W with the polishing pad to adjust the degree of friction between the substrate W and the polishing pad. The substrate carrier may press each part of the substrate W to different strengths so as to prevent the substrate W from bending during the polishing process of the substrate W. FIG. The substrate carrier according to an embodiment may include a carrier head 100, a retainer 120, a membrane 110, and a pressure regulator 130.

The carrier head 100 may adjust the position of the substrate (W). The carrier head 100 may receive power from the outside and rotate about an axis. As the carrier head 100 rotates, the substrate W may be polished while being rotated in contact with the polishing pad.

The carrier head 100 can move in a direction parallel to the polishing pad. For example, the carrier head 100 may translate in a first direction parallel to the polishing pad surface and in a second direction perpendicular to the first direction. As the carrier head 100 moves horizontally, the substrate W may be transferred to or removed from the polishing position.

The retainer 120 may prevent the substrate W from being separated from the substrate carrier during the polishing of the substrate W. FIG. The retainer 120 may be connected to the carrier head 100 so as to surround the gripped substrate W. For example, in the process of polishing the substrate W, the retainer 120 serves to support the side surface of the substrate W so that the substrate W does not deviate from the gripped position due to the external force generated by the polishing. can do.

The membrane 110 is connected to the carrier head 100 and may form pressure chambers C1, C2, C3, and C4 for gripping and polishing the substrate W. The pressure chambers C1, C2, C3, and C4 formed by the membrane 110 may apply pressure to the held substrate W. Membrane 110 may include a bottom plate and a flap.

The bottom plate may form the bottom of the pressure chambers C1, C2, C3, C4. The held substrate W may be located on the bottom plate. In other words, the substrate W may be gripped by the substrate carrier to face the outer surface of the bottom plate of the membrane 110. The bottom plate may have a size and shape corresponding to the substrate (W). For example, the bottom plate may be formed in a circular disc shape. The bottom plate may comprise a flexible flexible material. In this case, the pressure applied to the substrate W may be adjusted according to the degree of expansion of the bottom plate.

The flap may form sidewalls of the pressure chambers C1, C2, C3, C4. The flap may extend from the bottom plate toward the carrier head 100. The ends of the flaps may be fastened to the carrier head 100 to connect the membrane 110 to the carrier head 100. The flap may have a circular cross section with the center of the bottom plate as the origin. In other words, the flap may have a ring shape when the membrane 110 is viewed from the top. A plurality of flaps may be formed. The plurality of flaps may have circular cross sections having different radii from the center of the bottom plate. Since flaps adjacent to each other define one pressure chamber C1, C2, C3, C4, a plurality of pressure chambers C1, C2, C3, C4 can be formed through the plurality of flaps. The size of the pressure chambers C1, C2, C3, C4 partitioned by the flaps can be determined through the spacing between adjacent flaps.

In summary, the membrane 110 may form pressure chambers C1, C2, C3, and C4 through the bottom plate, the flap, and the carrier head 100. When a plurality of pressure chambers C1, C2, C3, and C4 are formed, the pressure chambers C1 and C2 are formed on the surface of the substrate W located at the bottom of each of the pressure chambers C1, C2, C3, and C4. , C3, C4) may be applied pressure. Therefore, when the pressures of the plurality of pressure chambers C1, C2, C3, and C4 are different, different pressures may be applied to the respective portions of the substrate W. FIG. In other words, the substrate W may be locally pressurized according to the pressure applied to the plurality of pressure chambers C1, C2, C3, and C4.

The pressure controller 130 may adjust the pressure of the pressure chambers C1, C2, C3, and C4. The pressure regulator 130 may be connected to each of the pressure chambers C1, C2, C3, and C4 to selectively adjust the pressures of the plurality of pressure chambers C1, C2, C3, and C4. For example, each of the pressure chambers C1, C2, C3, C4 is provided with fluid through different ports, and the pressure in the pressure chambers C1, C2, C3, C4 depending on the degree of inflow or outflow of each fluid. Can rise or fall. The pressure regulator 130 may selectively adjust the pressure of at least some of the plurality of pressure chambers C1, C2, C3, and C4. For example, the pressure chambers C1, C2, C3, and C4 have the remaining pressure chambers C1, C2, C3, and C4 while maintaining pressure in some of the pressure chambers C1, C2, C3, and C4. The pressure can be adjusted.

The pressure regulator 130 repeatedly changes the pressure of at least some of the plurality of pressure chambers C1, C2, C3, and C4, thereby reducing pressure fluctuation of the pressure chambers C1, C2, C3, and C4. Can be generated. For example, the pressure regulator 130 sets the first pressure and the second pressure higher than the first pressure, and the pressure in the pressure chambers C1, C2, C3, C4 is between the first pressure and the second pressure. It can be controlled to change. In this manner, an effect similar to shaking and dechucking the substrate W from the substrate carrier can be realized. In particular, since the pressure in the pressure chamber (C1, C2, C3, C4) is repeatedly changed in the set pressure range it can have the effect of leaving the substrate (W) while limiting the warpage phenomenon of the substrate (W) within a certain range have.

On the other hand, the pressure adjusting unit 130 may intermittently apply the set pressure to at least some of the plurality of pressure chambers C1, C2, C3, and C4. For example, the pressure regulator 130 sets a specific pressure with respect to the pressure chambers C1, C2, C3, and C4 of some of the plurality of pressure chambers C1, C2, C3, and C4, and based on the set pressure. You can change the pressure within the setting range. In other words, the set pressure may be intermittently applied to the pressure chamber. Accordingly, pressure vibration based on the set pressure may act on the substrate W attached to the pressure chambers C1, C2, C3, and C4.

The substrate carrier repeats a series of operations for polishing the substrate (W). For example, the substrate carrier may include a chucking operation of holding the stored substrate W to transfer the substrate W, an operation of pressing the held substrate W onto the polishing pad, and a polishing completed substrate ( The dechucking operation of leaving W) is repeatedly performed.

Such a series of operations is performed by pressure balance applied to both surfaces of the substrate W. As shown in FIG. For example, when the pressure chambers C1, C2, C3, C4 are pressurized, the fluid (air) pressure located between the substrate W and the membrane 110 increases, thereby increasing the substrate W and the membrane 110. There will be a gap between them. On the other hand, when the pressure chambers C1, C2, C3, and C4 are depressurized, since the fluid pressure located between the substrate W and the membrane 110 decreases, the gap between the substrate W and the membrane 110 is narrow. You lose. As described above, when the distance between the substrate W and the membrane 110 is adjusted by pressure balance, it is necessary to precisely control the horizontal position of the substrate W. When the horizontal position of the substrate W is not precisely controlled, since the horizontal state of the substrate W is not maintained, a problem arises in that the interval between the membrane 110 and each region of the substrate W is different. Can be. This problem causes a phenomenon in which the substrate W is locally bent, and as a result, a problem of damage to the substrate W is generated. On the other hand, the polishing process by contacting the substrate (W) in contact with the polishing pad inevitably occurs wear of the retainer 120. As the retainer 120 wears, the gap between the polishing pad and the membrane 110 is shortened. In this case, since the wear level of the retainer 120 is not constant, the gap between the membrane 110 and the substrate W in contact with the polishing pad is locally changed, so that the polishing profile of the substrate W is The phenomenon that is different from the applied pressure condition occurs.

The substrate carrier according to an embodiment may prevent the substrate W from bending during a row of operations for polishing the substrate W, and may uniformly polish the entire surface to be polished of the substrate W. The pressure applied locally can be adjusted individually for each part of For example, the substrate carrier is a pressure chamber (C1, C2, C3, C4) of a portion requiring local pressure fluctuation while maintaining the pressure of some of the plurality of pressure chambers (C1, C2, C3, C4). Only the pressure of can be selectively raised or lowered.

Specifically, the pressure adjusting unit 130 sets a profile for local bending of the substrate W, and individually sets the degree of pressure change in the plurality of pressure chambers C1, C2, C3, and C4 based on the set profile. Can be adjusted. For example, when the pressures of the plurality of pressure chambers C1, C2, C3, and C4 are reduced to a set pressure, the pressure adjusting unit 130 may reduce the pressure of some of the pressure chambers below the set pressure. On the other hand, when the pressure of the plurality of pressure chambers (C1, C2, C3, C4) is pressurized to the set pressure, the pressure regulator 130 may pressurize the pressure of some of the pressure chambers to exceed the set pressure.

2 and 3 are operation diagrams showing a state in which the substrate is chucked to the substrate carrier according to an embodiment.

2 and 3, the substrate carrier according to an embodiment may prevent the bending of the substrate W that occurs while the substrate W is chucked.

As shown in FIG. 2, in the chucking process of the substrate W, the substrate carrier moves so that the substrate W is located in the space between the retainer 120 rings. In this case, a fluid layer is formed between the substrate W and the membrane 110. As shown in FIG. 2, when the pressure in the pressure chambers C1, C2, C3, and C4 formed by the membrane 110 is reduced, the bottom surface of the membrane 110 faces the pressure chambers C1, C2, C3, and C4. And the pressure of the fluid layer between the substrate W and the membrane 110 is reduced, so that the substrate W can be chucked to the carrier head 100.

If the horizontal state of the substrate W is not maintained in the chucking process of the substrate W, a gap between the membrane 110 and the substrate W may not be constant. In this case, as shown in FIG. 3, the substrate W may be locally bent. The pressure adjusting part 130 of the substrate carrier maintains the pressure in the pressure chambers C1, C2, C3, and C4 corresponding to the portion of the substrate W bent in the direction of the membrane 110. By reducing the pressure of C2, C3, and C4, the distance between the substrate W and the membrane 110 may be constantly adjusted. As a result, the gap between the substrate W and the membrane 110 is maintained, so that the warpage phenomenon of the substrate W can be solved. As described above, when the pressure of only some of the pressure chambers C1, C2, C3, and C4 of the plurality of pressure chambers C1, C2, C3, and C4 is reduced in pressure, the ashes of the pressure chambers C1, C2, C3, and C4 are reduced. Since only the degree of change in the pressure is maintained while the pressure drop in the pressure chambers C1, C2, C3, C4 is maintained without the pressurizing operation, the process required for pressure control in the pressure chambers C1, C2, C3, C4 is controlled. Improve efficiency In addition, by continuously performing the pressure fluctuation process required for the chucking of the substrate (W), it is possible to reduce the time required for chucking.

4 and 5 are operation diagrams illustrating a state in which a substrate is dechucked in the substrate carrier according to an exemplary embodiment.

4 and 5, the substrate carrier according to an embodiment may prevent the bending of the substrate W that occurs during the dechucking of the substrate W. Referring to FIGS.

In the process of dechucking the polished substrate W, the substrate carrier presses the substrate W to the opposite side of the membrane 110 by increasing the pressure in the pressure chambers C1, C2, C3 and C4. When the pressure in the pressure chambers C1, C2, C3, and C4 formed by the membrane 110 rises, the bottom surface of the membrane 110 expands toward the substrate W, and the substrate W and the membrane The pressure formed by the fluid layer between the 110 is increased. When the pressure of the fluid layer between the substrate W and the membrane 110 becomes higher than the external pressure, the gap between the substrate W and the membrane 110 increases and the substrate W leaves the substrate carrier.

In the dechucking process of the substrate W, non-uniform pressure may be applied to each region of the substrate W. FIG. In particular, when the horizontal state of the substrate W with respect to the ground is not maintained, as shown in FIG. 4, a phenomenon in which the substrate W is locally bent may occur. The pressure adjusting part 130 of the substrate carrier raises the pressure in the pressure chambers C1, C2, C3, and C4 corresponding to the portion of the substrate W curved in the direction of the membrane 110, and the remaining pressure chambers C1 and C2. By maintaining the pressures C3 and C4, the distance between the substrate W and the membrane 110 can be uniformly adjusted. As a result, by maintaining a constant gap between the substrate W and the membrane 110, the local bending of the substrate W can be solved. In this manner, the substrate carrier can efficiently perform the dechucking operation of removing the substrate W from the membrane 110 while maintaining the state in which local bending of the substrate W is prevented. In particular, since the substrate carrier increases only the rising width of the pressure in some of the pressure chambers C1, C2, C3, C4 while maintaining the pressure rise in the pressure chambers C1, C2, C3, C4, the dechucking operation And continuity of the local pressing operation of the substrate W can be ensured. Therefore, it is possible to reduce the time required during the dechucking process of the substrate (W).

Meanwhile, the pressure regulator 130 sets a profile for local bending of the substrate W generated during the dechucking process of the substrate W, and sets a plurality of pressure chambers C1, C2, C3, and the like according to the set profile. Each pressure applied to C4) may be adjusted individually. For example, the pressure controller 130 increases the pressure of the plurality of pressure chambers C1, C2, C3, and C4 during the dechucking process of the substrate W, but determines the substrate W according to the applied pressure. By setting the profile for the bending phenomenon, and thereby increasing the degree of pressure rise in the pressure chamber (C1, C2, C3, C4) corresponding to the portion of the substrate (W) that is bent upward, thereby bending the substrate (W) The substrate W can be effectively dechucked while being prevented.

FIG. 6 is an operation diagram illustrating a state in which a substrate carrier exerts pressure on each portion of a substrate according to an embodiment.

Referring to FIG. 6, the substrate carrier may individually adjust the pressure applied to each portion of the substrate W to prevent local bending of the substrate W during the CMP process. The substrate carrier may include a carrier head 100, a membrane 110, a retainer 120 ring, a pressure regulator 130, and a detector 140.

The detector 140 may detect the degree of warpage of the held substrate W. FIG. The detector 140 may detect a gap between the bottom plate of the membrane 110 and the substrate (W). When the membrane 110 forms a plurality of pressure chambers C1, C2, C3, and C4, the detector 140 may include a bottom surface of each of the pressure chambers C1, C2, C3, and C4 and the respective pressure chambers. By detecting the distance between the portions of the substrate W corresponding to (C1, C2, C3, C4), the degree of local bending of the substrate W can be detected.

The pressure adjuster 130 may adjust the degree of pressure applied to each portion of the substrate W based on the information detected by the detector 140. For example, the pressure regulator 130 sets a reference interval for the gap between the substrate W and the membrane 110, and each of the membranes corresponding to the plurality of pressure chambers C1, C2, C3, C4 ( An interval between the substrate 110 and the substrate W may be maintained below a predetermined interval from the reference interval. For example, as shown in FIG. 6, when a specific portion of the substrate W approaches the membrane 110 by less than a predetermined reference interval, the pressure adjusting unit 130 may include a pressure chamber corresponding to the portion of the substrate W. By increasing the pressure of C1, C2, C3, C4, the distance between the substrate W and the membrane 110 can be maintained by the first interval.

According to this method, in the polishing process of the substrate W through the substrate carrier, it is possible to solve the problem that the substrate W is damaged by preventing the bending of the substrate W. FIG. For example, when the retainer 120 is worn out during the polishing of the substrate W, the substrate carrier may be inclined with respect to the ground. In this case, since the interval between the substrate W and the membrane 110 is not constant, even when the same pressure is applied to the plurality of pressure chambers C1, C2, C3, C4, the respective portions of the substrate W are applied to the respective portions. Actual pressure may vary, causing the substrate W to bend. Therefore, the damage of the board | substrate W can be prevented to the minimum by detecting the bending degree of the board | substrate W, and adjusting the pressure applied to each site | part of the board | substrate W by the detected information.

7 is a flowchart of a method of controlling a substrate carrier, according to an exemplary embodiment.

Referring to FIG. 7, the method of controlling the substrate carrier according to an embodiment may be performed in a substrate carrier including a membrane forming a plurality of pressure chambers that apply pressure to respective portions of the held substrate. For example, the method of controlling the substrate carrier may be performed in the dechucking process of the substrate. The control method of the substrate carrier includes the steps of raising the pressure of the plurality of pressure chambers 210, detecting the degree of bending of the substrate according to the pressure increase 220, and further increasing the pressure of some of the plurality of pressure chambers. 230 may be included.

Step 210 may pressurize the substrate portion corresponding to each pressure chamber by raising the pressure of the plurality of pressure chambers. Step 210 may open the gap between the substrate and the membrane by pressing the substrate.

In operation 220, the degree of warpage of the substrate may be detected. In operation 220, the degree of bending of each region of the substrate may be detected according to the pressing of the substrate. Step 220 may include setting a reference spacing for the spacing between the membrane and the substrate, and detecting a substrate portion corresponding to less than the reference spacing. In other words, step 220 may detect a region of each region of the substrate that is bent to approach the membrane.

Step 230 may alleviate the warpage of the substrate by raising the pressure of some of the plurality of pressure chambers. Step 230 may further increase the pressure of the pressure chamber corresponding to the portion of the substrate proximate the membrane while maintaining the pressure of some of the plurality of pressure chambers in which the pressure is increased.

Although embodiments have been described with reference to the accompanying drawings as described above, various modifications and variations are possible to those skilled in the art from the above description. For example, the described techniques may be performed in a different order than the described method, and / or components of the described structure, apparatus, etc. may be combined or combined in a different form than the described method, or may be combined with other components or equivalents. Appropriate results can be achieved even if they are replaced or substituted.

100: carrier head
110: membrane
120: retainer
140: pressure control unit

Claims (19)

Carrier head;
A membrane connected to the carrier head and forming a plurality of pressure chambers to apply pressure to the held substrate; And
It includes a pressure regulator for adjusting the pressure of the pressure chamber,
And the pressure regulator selectively regulates the pressure of at least some of the plurality of pressure chambers.
The method of claim 1,
The pressure control unit,
And controls the pressure of the remaining pressure chamber while maintaining the pressure in at least one of the plurality of pressure chambers.
The method of claim 2,
The pressure control unit,
In the process of dechucking the substrate from the membrane, the pressure in some of the plurality of pressure chambers is raised and the pressure in the remaining pressure chambers is maintained.
The method of claim 3,
The pressure control unit,
During the dechucking of the substrate, setting a profile for local bending of the substrate and raising the pressure of the pressure chamber corresponding to the substrate portion proximate to the membrane based on the set profile.
The method of claim 2,
The pressure control unit,
In the process of chucking the substrate to the membrane, the pressure in some of the plurality of pressure chambers is reduced and the pressure in the remaining pressure chamber is maintained.
The method of claim 2,
The pressure control unit,
Setting a profile for local bending of the substrate and individually adjusting the degree of pressure change in the plurality of pressure chambers based on the set profile.
The method of claim 6,
The pressure control unit,
When the pressure in the plurality of pressure chambers is reduced to a set pressure, the pressure in some of the pressure chambers is reduced to less than the set pressure,
And when the pressures of the plurality of pressure chambers are pressurized to a set pressure, the pressure of the part of the pressure chambers is pressurized to exceed the set pressure.
The method of claim 2,
The pressure control unit,
Setting a reference interval for the gap between the membrane and the substrate,
And regulate the pressure in the pressure chamber so that the spacing between each of the membrane portions corresponding to the plurality of pressure chambers and the substrate is kept below the set spacing from the reference spacing.
The method of claim 1,
The pressure control unit,
And generate pressure fluctuations in pressure chambers of at least some of said plurality of pressure chambers.
The method of claim 9,
And a first pressure and a second pressure higher than the first pressure are repeatedly applied to the pressure chamber.
The method of claim 9,
And the pressure chamber has a change in pressure within a set range based on the set pressure.
The method of claim 11,
And the set pressure is intermittently applied to the pressure chamber.
A carrier head on which the substrate is held;
A membrane connected to the carrier head to form a plurality of pressure chambers that apply local pressure to the non-abrasive surface of the gripped substrate;
A retainer ring connected to the carrier head to surround the gripped substrate; And
And a pressure regulator for individually regulating pressure in each of the plurality of pressure chambers.
The method of claim 13,
The pressure control unit,
During the dechucking of the substrate, the pressure of the plurality of pressure chambers is increased, and the degree of pressure rise of each pressure chamber is adjusted differently.
The method of claim 13,
Further comprising a detection unit for detecting the degree of warp of the substrate,
And the detector detects a gap between the membrane and a substrate portion corresponding to each of the pressure chambers.
The method of claim 15,
The pressure control unit,
Set a reference spacing for the spacing between the substrate and the membrane,
And raises the pressure in the pressure chamber corresponding to the portion of the substrate that is less than the reference interval.
In the control method of the substrate carrier comprising a membrane for forming a plurality of pressure chambers for applying pressure to each part of the gripped substrate,
Raising the pressure of the plurality of pressure chambers;
Detecting a degree of warpage of the substrate as the pressure rises in the pressure chamber;
Increasing the pressure of a portion of the plurality of pressure chambers.
The method of claim 17,
Detecting the degree of warpage of the substrate,
Setting a reference spacing for the spacing between the membrane and the substrate; And
Detecting a portion of the substrate corresponding to less than the set reference interval.
The method of claim 17,
Increasing the pressure of a portion of the plurality of pressure chambers,
And increasing the pressure of the remaining pressure chambers while maintaining the pressure of some of the plurality of pressure chambers.

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