KR102512133B1 - Wafer carrier and control method thereof - Google Patents

Abstract

A substrate carrier and a control method thereof are disclosed. A substrate carrier according to an embodiment includes a carrier head; a membrane connected to the carrier head and forming a plurality of pressure chambers for applying pressure to the held substrate; and a pressure control unit configured to control the pressure of the pressure chamber, wherein the pressure control unit can selectively control the pressure of at least some of the plurality of pressure chambers.

Description

Substrate carrier and its control method {WAFER CARRIER AND CONTROL METHOD THEREOF}

The following embodiments relate to a substrate carrier and a control method thereof.

In the manufacture of semiconductor devices, chemical mechanical polishing (CMP) operations including polishing, buffing, and cleaning are required. The semiconductor element is in the form of a multilayer structure, and a transistor element having a diffusion region is formed in a substrate layer. In the substrate layer, connecting metal lines are patterned and electrically connected to transistor elements forming functional elements. As is known, the patterned conductive layer is insulated from other conductive layers with an insulating material such as silicon dioxide. As more metal layers and associated insulating layers are formed, the need to flatten the insulating material increases. Without flattening, the fabrication of additional metal layers becomes substantially more difficult because of the large variation in surface morphology. In addition, the metal line pattern is formed of an insulating material, so that the metal CMP operation removes excess metal.

The CMP operation performs a process of physically polishing the surface of the substrate through a polishing pad. In order to polish a substrate through a polishing pad, a substrate holding device that maintains the position of the substrate is required. The substrate holding device repeatedly performs a chucking operation of holding a substrate to be polished, a polishing operation of bringing the held substrate into contact with a polishing pad, and a dechucking operation of removing the polished substrate. The series of operations described above are performed by controlling the pressure applied to the substrate. The pressure applied to the substrate is generally determined through a pressure chamber within the substrate holding device. Since each pressure applied to the substrate is different for each part, a phenomenon in which the substrate is bent may occur during the process of chucking, polishing, and dechucking the substrate. The warping of the substrate lowers the polishing uniformity of the substrate, and may eventually cause serious damage to the substrate. Therefore, there is a need for a device for preventing the bending of the substrate in the process of maintaining the position of the substrate.

An object according to an embodiment is to provide a substrate carrier and a control method thereof that prevent warping of a substrate by individually adjusting the pressure applied to each region of the substrate.

An object according to an embodiment is to provide a substrate carrier that efficiently grips a substrate and a control method thereof by additionally adjusting pressure fluctuations of some of a plurality of pressure chambers.

A substrate carrier according to an embodiment includes a carrier head; a membrane connected to the carrier head and forming a plurality of pressure chambers for applying pressure to the held substrate; and a pressure control unit configured to control the pressure of the pressure chamber, wherein the pressure control unit can selectively control the pressure of at least some of the plurality of pressure chambers.

In one aspect, the pressure controller may adjust the pressure of the remaining pressure chambers while maintaining the pressure of at least one pressure chamber among the plurality of pressure chambers.

In one aspect, the pressure control unit may increase the pressure of some of the plurality of pressure chambers and maintain the pressure of the remaining pressure chambers while the substrate is dechucking from the membrane.

In one aspect, the pressure control unit sets a profile for local warping of the substrate during the dechucking process of the substrate, and adjusts the pressure in the pressure chamber corresponding to a portion of the substrate close to the membrane based on the set profile. can elevate

In one aspect, the pressure regulator may reduce the pressure of some of the plurality of pressure chambers and maintain the pressure of the remaining pressure chambers while the substrate is chucked to the membrane.

In one aspect, the pressure control unit may set a profile for local warping of the substrate, and individually adjust degrees of pressure change in the plurality of pressure chambers based on the set profile.

In one side, the pressure regulator, when the pressure of the plurality of pressure chambers is reduced to a set pressure, the pressure of some of the pressure chambers is reduced to less than the set pressure, the pressure of the plurality of pressure chambers to the set pressure When pressurized, the pressure in some of the pressure chambers can be pressurized to exceed the set pressure.

In one side, the pressure control unit sets a standard interval for the interval between the membrane and the substrate, and sets the interval between each membrane portion and the substrate corresponding to the plurality of pressure chambers from the standard interval to less than the set interval. It is possible to adjust the pressure of the pressure chamber so that it is maintained as .

In one side, the pressure controller may generate pressure fluctuations in at least some of the plurality of pressure chambers.

In one aspect, a first pressure and a second pressure higher than the first pressure may be repeatedly applied to the pressure chamber.

In one aspect, the pressure of the pressure chamber may change within a set range based on the set pressure.

In one aspect, the set pressure may be intermittently applied to the pressure chamber.

A substrate carrier according to an embodiment includes a carrier head holding a substrate; a membrane coupled to the carrier head to form a plurality of pressure chambers for applying localized pressure to the non-abrasive surface of the gripped substrate; a retainer ring connected to the carrier head to surround the gripped substrate; and a pressure control unit individually adjusting the pressure of each of the plurality of pressure chambers.

In one aspect, the pressure control unit increases the pressure of the plurality of pressure chambers during the process of dechucking the substrate, and may differently adjust the degree of pressure increase in each pressure chamber.

In one aspect, the substrate carrier may further include a detection unit for detecting a degree of warping of the substrate, and the detection unit may detect a gap between the membrane and a substrate portion corresponding to each of the pressure chambers.

In one aspect, the pressure control unit may set a standard interval for the interval between the substrate and the membrane, and increase a pressure in the pressure chamber corresponding to a portion of the substrate less than the standard interval.

A control method of a substrate carrier including a membrane forming a plurality of pressure chambers for applying pressure to each part of a gripped substrate according to an embodiment includes increasing pressure of the plurality of pressure chambers; detecting a degree of warping of the substrate according to the pressure increase; The step of increasing the pressure of some of the plurality of pressure chambers may be included.

In one aspect, the detecting of the degree of warping of the substrate may include setting a reference distance for a distance between the membrane and the substrate; and detecting a substrate portion corresponding to less than the reference interval.

In one aspect, the step of increasing the pressure of some of the plurality of pressure chambers may increase the pressure of the remaining pressure chambers while maintaining the pressure of some of the plurality of pressure chambers.

A substrate carrier and a control method thereof according to an embodiment can prevent a substrate from warping by individually adjusting the pressure applied to each region of the substrate.

A substrate carrier and a control method thereof according to an exemplary embodiment may efficiently hold a substrate by additionally adjusting pressure fluctuations of some of a plurality of pressure chambers.

Effects of the substrate carrier and its control method according to an embodiment are not limited to those mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

The following drawings attached to this specification illustrate a preferred embodiment of the present invention, and together with the detailed description of the present invention serve to further understand the technical idea of the present invention, the present invention is limited to those described in the drawings. It should not be construed as limiting.
1 is a cross-sectional view of a substrate carrier according to one embodiment.
2 and 3 are operational diagrams illustrating a state in which a substrate is chucked to a substrate carrier according to an exemplary embodiment.
4 and 5 are operation diagrams illustrating a state in which a substrate is dechucked in a substrate carrier according to an embodiment.
6 is an operation diagram illustrating a state in which a substrate carrier applies pressure to each part of a substrate according to an embodiment.
7 is a flowchart of a control method of a substrate carrier according to an embodiment.

Hereinafter, embodiments will be described in detail through exemplary drawings. In adding reference numerals to components of each drawing, it should be noted that the same components have the same numerals as much as possible even if they are displayed on different drawings. In addition, in describing the embodiment, if it is determined that a detailed description of a related known configuration or function hinders understanding of the embodiment, the detailed description will be omitted.

In addition, in describing the components of the embodiment, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish the component from other components, and the nature, order, or order of the corresponding component is not limited by the term. When an element is described as being “connected,” “coupled to,” or “connected” to another element, that element may be directly connected or connected to the other element, but there may be another element between the elements. It should be understood that may be "connected", "coupled" or "connected".

Components included in one embodiment and components having common functions will be described using the same names in other embodiments. Unless stated to the contrary, descriptions described in one embodiment may be applied to other embodiments, and detailed descriptions will be omitted to the extent of overlap.

1 is a cross-sectional view of a substrate carrier according to one embodiment.

A substrate carrier according to an embodiment may be used in a polishing process of a substrate (W).

The substrate W may be a silicon wafer for manufacturing semiconductor devices. However, the type of substrate W is not limited thereto. For example, the substrate W may include glass for a flat panel display device (FPD) such as a liquid crystal display (LCD) or a plasma display panel (PDP). Meanwhile, in the drawing, the substrate (W) is illustrated as having a circular shape, but this is only an example for convenience of explanation, and the shape of the substrate (W) is not limited thereto.

The substrate carrier according to an embodiment may hold the substrate (W) for polishing of the substrate (W). The substrate carrier may hold a substrate W to be polished and transfer the held substrate W to a polishing position. The substrate carrier may polish the substrate W by bringing the substrate W transferred to the polishing position into contact with the polishing pad. The substrate carrier may adjust the degree of polishing of the substrate W by controlling the degree of friction between the substrate W and the polishing pad by pressing the substrate W with the polishing pad. During the polishing process of the substrate (W), the substrate carrier may press different parts of the substrate (W) with different strengths to prevent the substrate (W) from bending. A substrate carrier according to an embodiment may include a carrier head 100, a retainer 120, a membrane 110, and a pressure controller 130.

The carrier head 100 may adjust the position of the substrate (W). The carrier head 100 may rotate about an axis by receiving power from the outside. As the carrier head 100 rotates, the substrate W may be polished while rotating while being in contact with the polishing pad.

The carrier head 100 may move in a direction parallel to the polishing pad. For example, the carrier head 100 may translate in a first direction parallel to the surface of the polishing pad and in a second direction perpendicular to the first direction. As the carrier head 100 moves horizontally, the substrate W may be transported to or removed from the polishing position.

The retainer 120 may prevent the substrate W from being separated from the substrate carrier during the polishing process of the substrate W. The retainer 120 may be connected to the carrier head 100 to be disposed in a form surrounding the gripped substrate W. For example, while the substrate (W) is being polished, the retainer 120 serves to support the side of the substrate (W) so that the substrate (W) does not depart from the gripped position due to an external force generated during polishing. can do.

The membrane 110 may be connected to the carrier head 100 and form pressure chambers C1 , C2 , C3 , and C4 for holding and polishing the substrate W. The pressure chambers C1 , C2 , C3 , and C4 formed by the membrane 110 may apply pressure to the gripped substrate W. Membrane 110 may include a bottom plate and flaps.

The bottom plate may form the bottom of the pressure chambers C1, C2, C3 and C4. The gripped substrate W may be positioned on the bottom plate. In other words, the substrate W may be held by the substrate carrier so that the outer surface of the bottom plate of the membrane 110 faces. The bottom plate may have a size and shape corresponding to that of the substrate (W). For example, the bottom plate may be formed in the shape of a circular disk. The bottom plate may include an extensible flexible material. In this case, the pressure applied to the substrate W may be adjusted according to the degree of expansion and contraction of the bottom plate.

The flaps may form side walls of the pressure chambers C1, C2, C3, C4. The flap may extend from the bottom plate toward the carrier head 100 . Ends of the flaps may connect the membrane 110 to the carrier head 100 by being fastened to the carrier head 100 . The flap may have a circular cross section originating at the center of the bottom plate. In other words, in a state in which the membrane 110 is viewed from above, the flap may have a ring shape. A plurality of flaps may be formed. The plurality of flaps may have circular cross sections having different radii with the center of the bottom plate as the origin. Since the flaps adjacent to each other partition one pressure chamber C1 , C2 , C3 , and C4 , a plurality of pressure chambers C1 , C2 , C3 , and C4 may be formed through a plurality of flaps. The size of the pressure chambers C1 , C2 , C3 , and C4 partitioned by the flaps may be determined through the spacing between adjacent flaps.

In summary, the membrane 110 may form the pressure chambers C1 , C2 , C3 , and C4 through the bottom plate, the flaps, and the carrier head 100 . When a plurality of pressure chambers (C1, C2, C3, C4) are formed, each of the pressure chambers (C1, C2) on the surface of the substrate (W) located on the bottom of each pressure chamber (C1, C2, C3, C4) , C3, C4) can act on the pressure applied. Accordingly, when the pressures of the plurality of pressure chambers C1 , C2 , C3 , and C4 are different, different pressures may be applied to each part of the substrate W. In other words, the substrate W may be locally pressurized according to the pressure applied to the plurality of pressure chambers C1 , C2 , C3 , and C4 .

The pressure controller 130 may adjust the pressure of the pressure chambers C1, C2, C3, and C4. The pressure controller 130 is connected to each of the pressure chambers C1 , C2 , C3 , and C4 to selectively adjust the pressure of the plurality of pressure chambers C1 , C2 , C3 , and C4 . For example, fluid is supplied to each of the pressure chambers C1, C2, C3, and C4 through different ports, and the pressure in the pressure chambers C1, C2, C3, and C4 depends on the degree of inflow or discharge of each fluid. It can rise or fall. The pressure controller 130 may selectively adjust pressures of at least some of the plurality of pressure chambers C1 , C2 , C3 , and C4 . For example, the pressure chambers C1 , C2 , C3 , and C4 maintain the pressure of some of the plurality of pressure chambers C1 , C2 , C3 , and C4 while maintaining the remaining pressure chambers C1 , C2 , C3 , and C4 . pressure can be adjusted.

The pressure controller 130 repeatedly changes the pressure of at least some of the plurality of pressure chambers C1, C2, C3, and C4 to reduce pressure fluctuations in the pressure chambers C1, C2, C3, and C4. can cause For example, the pressure regulator 130 sets a first pressure and a second pressure higher than the first pressure, and the pressure of the pressure chambers C1, C2, C3, and C4 is between the first pressure and the second pressure. You can control it to change. According to this method, an effect similar to shaking and dechucking the substrate W from the substrate carrier can be implemented. In particular, since the pressure of the pressure chambers C1, C2, C3, and C4 repeatedly changes within a set pressure range, it is possible to have the effect of separating the substrate W while limiting the warping phenomenon of the substrate W within a certain range. there is.

On the other hand, the pressure regulator 130 may intermittently apply the set pressure to at least some of the plurality of pressure chambers C1 , C2 , C3 , and C4 . For example, the pressure controller 130 sets a specific pressure for some of the pressure chambers C1, C2, C3, and C4 among the plurality of pressure chambers C1, C2, C3, and C4, and sets the set pressure as a reference. The pressure can be changed within the set range. In other words, the set pressure may be intermittently applied to the pressure chamber. Accordingly, pressure vibration based on the set pressure may act on the substrates W attached to the pressure chambers C1, C2, C3, and C4.

The substrate carrier repeats a series of operations to polish the substrate (W). For example, the substrate carrier performs a chucking operation of holding the stored substrate W in order to transfer the substrate W, an operation of pressing the held substrate W to a polishing pad, and a polished substrate ( W) is repeatedly performed dechucking operation.

Such a series of operations is performed by equalizing pressure applied to both sides of the substrate (W). For example, when the pressure chambers C1, C2, C3, and C4 are pressurized, the pressure of the fluid (air) located between the substrate W and the membrane 110 increases, thereby causing the substrate W and the membrane 110 to the gap between them widens. On the other hand, when the pressure chambers C1, C2, C3, and C4 are depressurized, since the pressure of the fluid located between the substrate W and the membrane 110 decreases, the gap between the substrate W and the membrane 110 narrows. will lose In this way, when the distance between the substrate W and the membrane 110 is adjusted by equalizing the pressure, it is necessary to precisely control the horizontal position of the substrate W. If the horizontal position of the substrate (W) is not precisely controlled, since the horizontal state of the substrate (W) is not maintained, a problem in that the gap between each region of the membrane 110 and the substrate (W) is different may occur. can This problem causes the substrate (W) to be locally bent, resulting in damage to the substrate (W). Meanwhile, the polishing process by bringing the substrate W into contact with the polishing pad inevitably causes wear of the retainer 120 . As wear of the retainer 120 progresses, the distance between the polishing pad and the membrane 110 becomes shorter. In this case, since the degree of abrasion of the retainer 120 is not constant, the distance between the substrate W in contact with the membrane 110 and the polishing pad is locally changed, so that the polishing profile of the substrate W is changed. A phenomenon that differs from the applied pressure condition occurs.

The substrate carrier according to an embodiment prevents the substrate (W) from being bent during a series of operations for polishing the substrate (W) and uniformly polishes the entire polished surface of the substrate (W). ), the pressure applied locally can be individually adjusted for each part of the body. For example, the substrate carrier may include the pressure chambers C1, C2, C3, and C4 of a portion requiring local pressure fluctuations while maintaining the pressure of some of the plurality of pressure chambers C1, C2, C3, and C4. Only the pressure of can be selectively raised or lowered.

Specifically, the pressure controller 130 sets a profile for the local warping of the substrate W, and individually determines the degree of pressure change in the plurality of pressure chambers C1, C2, C3, and C4 based on the set profile. can be adjusted with For example, when the pressure of the plurality of pressure chambers C1 , C2 , C3 , and C4 is reduced to a set pressure, the pressure regulator 130 may reduce the pressure of some of the pressure chambers to less than the set pressure. On the other hand, when the pressures of the plurality of pressure chambers C1 , C2 , C3 , and C4 are pressurized to the set pressure, the pressure controller 130 may pressurize the pressures of some of the pressure chambers to exceed the set pressure.

2 and 3 are operational diagrams illustrating a state in which a substrate is chucked to a substrate carrier according to an exemplary embodiment.

Referring to FIGS. 2 and 3 , the substrate carrier according to an exemplary embodiment may prevent the substrate W from being bent while being chucked.

As shown in FIG. 2 , in the process of chucking the substrate W, the substrate carrier is moved so that the substrate W is located in the space between the rings of the retainer 120 . In this case, a fluid layer is formed between the substrate W and the membrane 110 . As shown in FIG. 2 , when the pressure in the pressure chambers C1, C2, C3, and C4 formed by the membrane 110 is reduced, the bottom surface of the membrane 110 moves toward the pressure chambers C1, C2, C3, and C4. , and as the pressure of the fluid layer between the substrate W and the membrane 110 decreases, the substrate W may be chucked to the carrier head 100 .

If the substrate (W) is not maintained in a horizontal state during the chucking process of the substrate (W), a phenomenon in which the gap between the membrane 110 and the substrate (W) is not constant may occur. In this case, as shown in FIG. 3 , a phenomenon in which the substrate W is locally bent may occur. The pressure control unit 130 of the substrate carrier maintains the pressure of the pressure chambers C1, C2, C3, and C4 corresponding to the portion of the substrate W bent in the direction of the membrane 110, while maintaining the pressure of the remaining pressure chambers C1, The gap between the substrate W and the membrane 110 may be constantly adjusted by reducing the pressure of C2 , C3 , and C4 . As a result, by maintaining the gap between the substrate W and the membrane 110, the warping phenomenon of the substrate W can be solved. In this way, in the case of reducing the pressure of only some of the pressure chambers C1, C2, C3, and C4 among the plurality of pressure chambers C1, C2, C3, and C4, the material of the pressure chambers C1, C2, C3, and C4 is reduced. Since only the degree of pressure change is controlled while maintaining the pressure drop in the pressure chambers (C1, C2, C3, C4) without a pressurization operation, the process required for pressure control in the pressure chambers (C1, C2, C3, C4) efficiency can be improved. In addition, the time required for chucking can be reduced by continuously performing the process of changing the pressure required for chucking the substrate W.

4 and 5 are operation diagrams illustrating a state in which a substrate is dechucked in a substrate carrier according to an embodiment.

Referring to FIGS. 4 and 5 , the substrate carrier according to an exemplary embodiment may prevent a substrate W from being warped during a process of dechucking the substrate W.

In the process of dechucking the polished substrate W, the substrate carrier presses the substrate W to the opposite side of the membrane 110 by increasing the pressure in the pressure chambers C1 , C2 , C3 , and C4 . When the pressure of the pressure chambers C1, C2, C3, and C4 formed by the membrane 110 increases, the bottom surface of the membrane 110 expands toward the substrate W, and the substrate W and the membrane The pressure formed by the fluid layer between (110) is increased. When the pressure of the fluid layer between the substrate W and the membrane 110 is higher than the external pressure, the gap between the substrate W and the membrane 110 widens and the substrate W separates from the substrate carrier.

In the process of dechucking the substrate (W), uneven pressure may be applied to each region of the substrate (W). In particular, if the horizontal state of the substrate W with respect to the ground is not maintained, as shown in FIG. 4 , a phenomenon in which the substrate W is locally bent may occur. The pressure control unit 130 of the substrate carrier increases the pressure of the pressure chambers C1, C2, C3, and C4 corresponding to the portion of the substrate W bent toward the membrane 110, and increases the pressure of the remaining pressure chambers C1 and C2. , C3 and C4), the distance between the substrate W and the membrane 110 can be uniformly adjusted. As a result, by maintaining a constant distance between the substrate W and the membrane 110, the local warping phenomenon of the substrate W can be solved. According to this method, the substrate carrier can efficiently perform a dechucking operation of removing the substrate W from the membrane 110 while maintaining a state in which local warping of the substrate W is prevented. In particular, since the substrate carrier only increases the width of the pressure rise in some of the pressure chambers C1, C2, C3, and C4 while maintaining the pressure rise in the pressure chambers C1, C2, C3, and C4, the dechucking operation is performed. And it is possible to ensure continuity of the local pressing operation of the substrate (W). Accordingly, the time required in the process of dechucking the substrate W can be reduced.

Meanwhile, the pressure controller 130 sets a profile for the local warping of the substrate W that occurs during the dechucking process of the substrate W, and sets a plurality of pressure chambers C1, C2, C3, Each pressure applied to C4) may be individually adjusted. For example, the pressure controller 130 increases the pressure of the plurality of pressure chambers C1, C2, C3, and C4 during the process of dechucking the substrate W, and the substrate W is determined according to the applied pressure. ) By setting a profile for the warping phenomenon and increasing the degree of pressure increase in the pressure chambers C1, C2, C3, and C4 corresponding to the portion of the substrate W that is bent upward, the warping of the substrate W is reduced. It is possible to effectively dechucks the substrate W while preventing it.

6 is an operation diagram illustrating a state in which a substrate carrier applies pressure to each part of a substrate according to an embodiment.

Referring to FIG. 6 , the substrate carrier may individually adjust the pressure applied to each part of the substrate W to prevent local warping of the substrate W during the CMP process. The substrate carrier may include a carrier head 100 , a membrane 110 , a retainer ring 120 , a pressure control unit 130 , and a detection unit 140 .

The detection unit 140 may detect the degree of warping of the gripped substrate (W). The detector 140 may detect a gap between the bottom plate of the membrane 110 and the substrate W. When the membrane 110 forms a plurality of pressure chambers C1, C2, C3, and C4, the detector 140 detects the bottom surface of each of the pressure chambers C1, C2, C3, and C4 and the respective pressure chambers. The degree of local warping of the substrate (W) can be detected by detecting the distance between the portions of the substrate (W) corresponding to (C1, C2, C3, C4).

The pressure control unit 130 may adjust the degree of pressure applied to the substrate W for each part based on the information detected by the detection unit 140 . For example, the pressure controller 130 sets a standard interval for the interval between the substrate W and the membrane 110, and each membrane corresponding to the plurality of pressure chambers C1, C2, C3, and C4 ( 110) and the substrate W may be maintained within a set distance from the reference distance. For example, as shown in FIG. 6 , when a specific portion of the substrate (W) approaches the membrane 110 by less than a set reference interval, the pressure controller 130 is a pressure chamber corresponding to the portion of the substrate (W) ( By increasing the pressures of C1, C2, C3, and C4, the distance between the substrate W and the membrane 110 may be maintained by the first distance.

According to this method, in the polishing process of the substrate (W) through the substrate carrier, it is possible to prevent the substrate (W) from being warped, thereby solving the problem of damage to the substrate (W). For example, when the retainer 120 is worn during the process of polishing the substrate W, a phenomenon in which the substrate carrier is inclined with respect to the ground may occur. In this case, since the distance between the substrate W and the membrane 110 is not constant, even when the same pressure is applied to the plurality of pressure chambers C1, C2, C3, and C4, the substrate W is applied to each part. A phenomenon in which the substrate W is bent may occur due to a change in actual applied pressure. Accordingly, damage to the substrate W can be minimized by detecting the degree of warping of the substrate W and adjusting the pressure applied to each part of the substrate W based on the detected information.

7 is a flowchart of a control method of a substrate carrier according to an embodiment.

Referring to FIG. 7 , the method of controlling a substrate carrier according to an embodiment may be performed in a substrate carrier including a membrane forming a plurality of pressure chambers for applying pressure to each part of a gripped substrate. For example, the method of controlling the substrate carrier may be performed during dechucking of the substrate. A method for controlling a substrate carrier includes increasing pressure in a plurality of pressure chambers (210), detecting a degree of warping of a substrate according to the pressure increase (220), and additionally increasing pressure in some of the plurality of pressure chambers. (230).

In step 210, by increasing the pressure of the plurality of pressure chambers, a portion of the substrate corresponding to each pressure chamber may be pressurized. In step 210, a gap between the substrate and the membrane may be widened by pressing the substrate.

In step 220, the degree of warping of the substrate may be detected. In step 220, the degree of local bending of each region of the substrate according to the pressurization of the substrate may be detected. Step 220 may include setting a standard distance for the distance between the membrane and the substrate, and detecting a substrate portion corresponding to less than the standard distance. In other words, step 220 may detect a region of each region of the substrate that is bent to come close to the membrane.

In operation 230, the warping of the substrate may be alleviated by increasing the pressure of some of the plurality of pressure chambers. In operation 230, the pressure of a pressure chamber corresponding to a portion of the substrate close to the membrane may be additionally increased while the pressure of some of the plurality of pressure chambers is maintained.

As described above, although the embodiments have been described with limited drawings, those skilled in the art can make various modifications and variations from the above description. For example, the described techniques may be performed in an order different from the described method, and/or components of the described structure, device, etc. may be combined or combined in a different form from the described method, or other components or equivalents may be used. Appropriate results can be achieved even if substituted or substituted by

100: carrier head
110: membrane
120: retainer
140: pressure control unit

Claims (19)

carrier head;
a membrane connected to the carrier head and forming a plurality of pressure chambers for applying pressure to the held substrate; and
A pressure regulator for regulating the pressure of the pressure chamber;
The pressure regulator,
selectively adjusting the pressure of at least some of the plurality of pressure chambers so that a distance between each region between the membrane and the held substrate is constant;
A substrate carrier that generates pressure fluctuations in at least some of the plurality of pressure chambers.
According to claim 1,
The pressure regulator,
Controlling the pressure of the remaining pressure chambers while maintaining the pressure of at least one pressure chamber among the plurality of pressure chambers, the substrate carrier.
According to claim 2,
The pressure regulator,
In the process of dechucking the substrate from the membrane, the pressure in some of the plurality of pressure chambers is increased, and the pressure in the remaining pressure chambers is maintained.
According to claim 3,
The pressure regulator,
In the process of dechucking the substrate, a profile for local warping of the substrate is set, and a pressure in a pressure chamber corresponding to a portion of the substrate proximate to the membrane is increased based on the set profile.
According to claim 2,
The pressure regulator,
In the process of chucking the substrate to the membrane, the pressure in some of the plurality of pressure chambers is reduced, and the pressure in the remaining pressure chambers is maintained.
According to claim 2,
The pressure regulator,
A substrate carrier that sets a profile for local warping of the substrate and individually adjusts a degree of pressure change in a plurality of pressure chambers based on the set profile.
According to claim 6,
The pressure regulator,
When the pressure of the plurality of pressure chambers is reduced to the set pressure, the pressure of some of the pressure chambers is reduced to less than the set pressure;
wherein when the pressures of the plurality of pressure chambers are pressurized to the set pressure, the pressures of some of the pressure chambers pressurize to exceed the set pressure.
According to claim 2,
The pressure regulator,
Setting a reference interval for the interval between the membrane and the substrate,
Controlling the pressure of the pressure chamber so that a distance between each membrane portion corresponding to the plurality of pressure chambers and the substrate is less than a set distance from the reference distance, the substrate carrier.
delete carrier head;
a membrane connected to the carrier head and forming a plurality of pressure chambers for applying pressure to the held substrate; and
A pressure regulator for regulating the pressure of the pressure chamber;
The pressure controller selectively adjusts the pressure of at least some of the plurality of pressure chambers,
A first pressure and a second pressure higher than the first pressure are repeatedly applied to the pressure chamber.
According to claim 1,
The pressure chamber is a substrate carrier in which the pressure changes within a set range based on the set pressure.
According to claim 11,
The set pressure is intermittently applied to the pressure chamber, the substrate carrier.
delete a carrier head on which a substrate is gripped;
a membrane coupled to the carrier head to form a plurality of pressure chambers for applying localized pressure to the non-abrasive surface of the gripped substrate;
a retainer ring connected to the carrier head to surround the gripped substrate; and
A pressure control unit for individually adjusting the pressure of each of the plurality of pressure chambers,
The pressure regulator,
generating pressure fluctuations in at least some of the plurality of pressure chambers;
In the process of dechucking the substrate, the substrate carrier increases the pressure of the plurality of pressure chambers, and controls the pressure increase degree of each pressure chamber differently.
a carrier head on which a substrate is gripped;
a membrane coupled to the carrier head to form a plurality of pressure chambers for applying localized pressure to the non-abrasive surface of the gripped substrate;
a retainer ring connected to the carrier head to surround the gripped substrate;
a pressure control unit individually adjusting the pressure of each of the plurality of pressure chambers; and
A detection unit for detecting the degree of warping of the substrate;
The pressure regulator generates pressure fluctuations in at least some pressure chambers among the plurality of pressure chambers,
Wherein the detection unit detects a gap between the membrane and the substrate portion corresponding to each of the pressure chambers.
According to claim 15,
The pressure regulator,
Setting a reference interval for the interval between the substrate and the membrane,
A substrate carrier for increasing a pressure in a pressure chamber corresponding to a portion of the substrate less than the reference interval.
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