KR20190127188A - Semiconductor device - Google Patents

Abstract

One embodiment of the present invention relates to a semiconductor device comprising: a substrate including a side surface connecting one surface and the other surface; and a semiconductor structure disposed on the one surface of the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first and second conductive semiconductor layers. The side of the substrate includes a plurality of light extraction lines spaced apart in the thickness direction of the substrate. The plurality of light extraction lines include a first light extraction line closest to the one surface of the substrate and a second light extraction line closest to the first light extraction line. The thickness direction distance from the one surface of the substrate to the first light extraction line is longer than the thickness direction distance between the first and second light extraction lines. The active layer generates ultraviolet light. The thickness of the substrate is 40 to 100 times thicker than the semiconductor structure. Thus, light extraction efficiency is improved at the side of the substrate.

Description

Semiconductor device {SEMICONDUCTOR DEVICE}

The embodiment relates to a semiconductor device.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy-to-adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes and laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductors have been developed through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent lifespan, and fast response speed compared to conventional light sources such as fluorescent and incandescent lamps can be realized. It has the advantages of safety, environmental friendliness.

In addition, when a light-receiving device such as a photodetector or a solar cell is also manufactured using a group 3-5 or 2-6 compound semiconductor material of a semiconductor, the development of device materials absorbs light in various wavelength ranges to generate a photocurrent. As a result, light in various wavelengths can be used from gamma rays to radio wavelengths. It also has the advantages of fast response speed, safety, environmental friendliness and easy control of device materials, making it easy to use in power control or microwave circuits or communication modules.

Therefore, the semiconductor device may replace a light emitting diode backlight, a fluorescent lamp, or an incandescent bulb, which replaces a cold cathode tube (CCFL) constituting a backlight module of an optical communication means, a backlight of a liquid crystal display (LCD) display device. Applications are expanding to include white LED lighting devices, automotive headlights and traffic lights, and sensors that detect gas or fire. In addition, the semiconductor device may be extended to high frequency application circuits, other power control devices, and communication modules.

In particular, the light emitting device that emits light in the ultraviolet wavelength region can be used for curing, medical treatment, and sterilization by curing or sterilizing.

The embodiment provides a semiconductor device having excellent light extraction efficiency.

According to one or more exemplary embodiments, a semiconductor device may include: a substrate including a side surface connecting one surface to another surface; And an active layer disposed on one surface of the substrate, the first conductive semiconductor layer, the second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. And a plurality of light extraction lines spaced apart from each other in a thickness direction of the substrate, wherein the plurality of light extraction lines comprise a first light extraction line closest to one surface of the substrate, and the first light extraction line. A second light extraction line closest to the first light extraction line,

The thickness direction distance from one surface of the substrate to the first light extraction line is longer than the thickness direction distance between the first light extraction line and the two light extraction lines, the active layer generates ultraviolet light, and the thickness of the substrate 40 times to 100 times the thickness of the semiconductor structure.

The shortest distance between the light extraction line closest to one surface of the substrate and one surface of the substrate among the plurality of light extraction lines may be 70 μm to 110 μm.

The shortest distance between the light extraction line closest to the other surface of the substrate and the other surface of the substrate among the plurality of light extraction lines may be 50 μm to 150 μm.

An interval between the plurality of light extraction lines may be 40 μm to 50 μm.

The width of the light extraction line closest to one surface of the substrate may be the widest among the plurality of light extraction lines.

A reflective electrode layer disposed on the second semiconductor layer; A first insulating layer covering the light emitting structure in which the reflective electrode layer is disposed; A first electrode pad penetrating the first insulating layer and connected to the first semiconductor layer; And a second electrode pad penetrating the first insulating layer and connected to the second semiconductor layer.

The plurality of light extraction lines may have a rougher surface than the remaining areas.

According to the embodiment, the light extraction efficiency is excellent in the side of the substrate.

Various and advantageous advantages and effects of the present invention are not limited to the above description, and will be more readily understood in the course of describing specific embodiments of the present invention.

1 is a view showing a semiconductor device according to an embodiment of the present invention;
2 is a view for explaining a light extraction line formed on the side of the substrate,
3 is a photograph showing a light extraction line formed on the side of the substrate,
4 is a view showing a semiconductor device package according to an embodiment of the present invention;
5A to 5D are diagrams for describing a method of manufacturing a semiconductor device package according to an embodiment of the present invention.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated and described in the drawings. However, this is not intended to limit the embodiments of the present invention to specific embodiments, it should be understood to include all changes, equivalents, and substitutes included in the spirit and scope of the embodiments.

Terms including ordinal numbers such as first and second may be used to describe various components, but the components are not limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the embodiments, the second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component. The term and / or includes a combination of a plurality of related items or any item of a plurality of related items.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of example embodiments. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

In the description of the embodiment, when one element is described as being formed "on or under" of another element, it is on (up) or down (on). or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as "on" or "under", it may include the meaning of the downward direction as well as the upward direction based on one element.

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings, and the same or corresponding components will be given the same reference numerals regardless of the reference numerals, and redundant description thereof will be omitted.

1 is a view showing a semiconductor device according to an embodiment of the present invention, Figure 2 is a view for explaining the light extraction line formed on the side of the substrate.

Referring to FIG. 1, the semiconductor device 100 according to the embodiment may include a substrate 110, a semiconductor structure 120, a first insulating layer 142, a first electrode pad 150, and a second electrode pad 160. ).

The semiconductor structure 120 according to the embodiment may output light in the ultraviolet wavelength band. For example, the semiconductor structure 120 may output light in the near ultraviolet wavelength band (UV-A), may output light in the far ultraviolet wavelength band (UV-B), or light in the deep ultraviolet wavelength band (UV-A). C) can be released. The ultraviolet wavelength band may be determined by the composition ratio of Al of the semiconductor structure 120.

For example, the light of the near ultraviolet wavelength range (UV-A) may have a peak wavelength in the range of 320 nm to 420 nm, the light of the far ultraviolet wavelength range (UV-B) may have a peak wavelength in the range of 280 nm to 320 nm, Light (UV-C) in the deep ultraviolet wavelength band may have a peak wavelength in the range of 100 nm to 280 nm.

The substrate 110 includes a conductive substrate or an insulating substrate. The substrate 110 may be a material or a carrier wafer suitable for growing a semiconductor material. The substrate 110 may be formed of a material selected from sapphire (Al ₂ O ₃ ), GaN, SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.

The thickness T1 of the substrate 110 may be 200 μm to 350 μm. If the thickness T1 of the substrate 110 is thicker than 350 μm, the reliability quality of the semiconductor device may be reduced due to a low current problem caused by an increase in the number of light extraction lines DL for separating the semiconductor device on the wafer. Degradation problems may occur. In addition, when the thickness T1 of the substrate 110 is greater than 350 μm, the light output Po may be saturated and the semiconductor device may not be structurally stable.

On the other hand, when the thickness T1 of the substrate 110 is thinner than 200 μm, the light output due to the extraction efficiency may be reduced.

The semiconductor structure 120 is disposed on one surface 111 of the substrate 110 and includes a first conductive semiconductor layer 121, an active layer 122, and a second conductive semiconductor layer 123. The semiconductor structure 120 may be separated into a plurality in the process of cutting the substrate 110.

The thickness T2 of the semiconductor structure 120 may be 3.5 um to 4.5 um.

If the thickness T2 of the semiconductor structure 120 is greater than 4.5 μm, the current spreading characteristics of the semiconductor structure 120 decrease according to the Al composition of the semiconductor structure 120, and the semiconductor structure 120 of the semiconductor structure 120 is reduced. Light output may be reduced.

In addition, when the thickness T2 of the semiconductor structure 120 is thinner than 3.5 μm, the light output may be reduced due to the deterioration of the thin film quality of the semiconductor device.

The thickness T1 of the substrate 110 may be 40 to 100 times the thickness T2 of the semiconductor structure 120. When the thickness T1 of the substrate 110 is 40 times or more than the thickness T2 of the semiconductor structure 120, the substrate 110 may be sufficiently thick to increase light extraction efficiency. In addition, when the thickness T1 of the substrate 110 is 100 times or less, an increase in the density of the light extraction lines DL with respect to the thickness reduces the problem of low current quality caused by an increase in thermal damage of the semiconductor device. Can be.

Referring to FIG. 2, the substrate 110 includes one surface 111, the other surface 112, and a side surface 113 connecting the one surface 111 and the other surface 112. A plurality of light extraction lines DL may be formed on the side surface 113 in the thickness direction.

The light extraction line DL may be a line that is partially melted by a laser and then cooled to have an amorphous structure. The light extraction line DL is relatively fragile and may be cut in the thickness direction by a weak impact.

The light extraction line DL may have a rough surface compared to the remaining surface of the side surface 113. Accordingly, the embodiment may improve the light extraction efficiency by controlling the surface roughness by adjusting the maximum number of light extraction lines DL for cutting the substrate 110.

In FIG. 2, for example, three light extraction lines DL are described. However, the light extraction lines DL may be formed in a maximum number within a range satisfying a predetermined condition as described below, thereby increasing surface roughness. .

Among the plurality of light extraction lines DL, the shortest distance d1 between a light extraction line (hereinafter, referred to as a first light extraction line DL1) and one surface 111 of the substrate 110 closest to one surface 111 of the substrate 110. ) May be 70 µm or more and 110 µm or less, or 90 µm or more and 100 µm or less.

On the other hand, the semiconductor structure 120 according to the embodiment of the present invention may output light in the ultraviolet wavelength band, may include a high Al composition for this, it can be easily damaged by external impact. That is, when the distance between the first light extraction line DL1 and the semiconductor structure 120 is less than 70 μm, the semiconductor structure 120 is susceptible to impact during the cutting of the substrate, and thus the semiconductor structure having high Al composition ( 120 may be damaged and may not emit light.

In addition, when the distance between the first light extraction line DL1 and the semiconductor structure 120 exceeds 110 μm, between the first light extraction line DL and the other surface 112 of the substrate within the thickness range of the substrate. The interval between the second light extraction lines DL formed in the narrower portion is narrowed, so that the interference of the laser occurs when the second light extraction line DL is formed using the laser, so that the first and second light extraction lines DL It may not have a separation distance. Therefore, there is a problem that it is difficult to proceed with the process of separating the semiconductor device.

Among the plurality of light extraction lines DL, the shortest distance d2 between the light extraction line (hereinafter referred to as the second light extraction line DL2) and the other surface 112 of the substrate 110 closest to the other surface 112 of the substrate 110. ) May be 50 µm or more and 150 µm or less, or 70 µm or more and 90 µm or less.

When the distance between the second light extraction line DL2 and the other surface 112 of the substrate 110 is less than 50 μm, the depth of the spot is too shallow, and thus the light extraction line may be discontinuously formed. In addition, when the distance between the second light extraction line DL2 and the other surface 112 of the substrate 110 exceeds 150 μm, the second light extraction line DL and the third light extraction are within the thickness range of the substrate. Since the interval between the lines DL is narrowed, interference of the laser may occur when forming the third light extraction line DL using the laser. Therefore, the first and second light extraction lines DL do not have a separation distance, which makes it difficult to proceed with the process of separating the semiconductor device.

The thickness direction Y of the thickness direction Y from one surface of the substrate 110 to the first light extraction line DL1 is the thickness direction distance between the first light extraction line DL1 and the second light extraction line DL2. It may be longer than L1). In this case, the thickness direction D1 from the one surface of the substrate to the first light extraction line DL1 is increased, thereby preventing the semiconductor structure 120 from being damaged when the chip is separated.

An interval L1 between the plurality of light extraction lines DL may be 40 μm or more and 50 μm or less, or 45 μm or more and 50 μm or less. When the interval is less than 40㎛, a section in which the light extraction line DL is not generated due to interference during laser irradiation may occur. When the interval exceeds 50 μm, the number of light extraction lines DL is reduced to reduce the light extraction efficiency.

For example, as shown in FIG. 2, when the distance L1 between the plurality of light extraction lines DL is less than 40 μm, it can be seen that a discontinuous section P occurs in some regions.

Referring to FIG. 2, the number N of light extraction lines DL may satisfy the following Equation 1.

[Relationship 1]

Here, D _total is the thickness of the substrate 110, d1 is the shortest distance between the first light extraction line DL1 and one surface 111 of the substrate 110, d2 is the second light extraction line DL2 and The shortest distance between the other surface 112 of the substrate 110, L1 is the separation distance between the plurality of light extraction lines (DL).

As described above, d1 may be 70 μm or more and 110 μm or less, d2 may be 50 μm or more and 150 μm or less, and L1 may be 40 μm or more and 50 μm or less.

That is, the number of the plurality of light extraction lines DL of the substrate 110 is obtained by subtracting the minimum distance d1 to be spaced apart from the semiconductor structure 120 and the minimum distance d2 to be spaced apart from the surface of the substrate 110. It may be the maximum number that can be formed at a uniform interval (L1) in the remaining thickness. Therefore, it is possible to form the maximum number of light extraction lines DL while suppressing occurrence of discontinuous sections.

When the thickness of the substrate 110 is 250 μm, when d1 is 90 μm, d2 is 80 μm, and L1 is 40 μm, the number of light extraction lines DL may be three. In this case, since the number N of the light extraction lines is an integer, the decimal point may be rounded.

Referring to FIG. 3, the first light extraction line DL1 is disposed at a height of 90 μm from one surface 111 of the substrate 110, and the third light extraction line DL3 is 130 from one surface 111 of the substrate. The second light extraction line DL2 may be disposed at a height of 170 μm from the one surface 111 of the substrate. In this case, it can be seen that there are no discontinuities in all the light extraction lines.

In this case, the thickness direction distance between the first light extraction line DL1 and the second light extraction line DL2 is 40% to 64% of the thickness direction distance from the one surface 111 of the substrate to the first light extraction line DL1. Can be. When the distance is 40% or more, the thickness direction D1 to the first light extraction line DL1 is increased to prevent the semiconductor structure 120 from being damaged when the chip is separated. In addition, when the distance is 64% or less, a maximum number of light extraction lines DL may be formed while suppressing occurrence of a discontinuous section.

In addition, the thickness direction distance between the second light extraction line DL2 and the third light extraction line DL3 is 40% to 64% of the thickness direction distance from the one surface 111 of the substrate to the first light extraction line DL1. Can be. That is, the thickness direction distance between the first light extraction line DL1 and the second light extraction line DL2 is substantially the same as the thickness direction distance between the second light extraction line DL2 and the third light extraction line DL3. can do.

As an example, Table 1 below is a result of controlling the interval and number of light extraction lines differently and measuring the light output (Po) at the chip level, Table 2 is a result of evaluating the light amount (lm) at the package level. The first embodiment forms two light extraction lines DL at a height of 70 μm and a height of 170 μm on one surface 111 of the substrate 110, and the second embodiment has one surface 111 of the substrate 110. Three light extraction lines DL were formed at 70 μm, 120 μm, and 170 μm, and the third embodiment extracts three light at 90 μm, 130 μm, and 170 μm from one surface 111 of the substrate 110. Line DL was formed.

First embodiment Second embodiment Third embodiment size 1100 by 1100 1100 by 1100 1100 by 1100 prober Po 480.8 (100%) 483.5 (100.6%) 487.8 (101.5%) Integral sphere Po 512.06 (100%) 518.73 (101.3%) 514.24 (100.4%)

First embodiment Second embodiment Third embodiment Brightness (lm) 169.0 (100%) 170.0 (100.6%) 170.5 (100.9%) Cx 0.280 0.279 0.283 Cy 0.252 0.253 0.257

Looking at Table 1 and Table 2, it can be seen that the brightness of the second embodiment and the second embodiment is increased compared to the first embodiment. This is considered to be because the number of light extraction lines is increased and the light extraction efficiency is improved.

Referring back to FIG. 1, the first conductive semiconductor layer 121 may be a compound semiconductor such as a III-V group or a II-VI group, and the first dopant may be doped in the first conductive semiconductor layer 121. Can be. The first conductive semiconductor layer 121 is a semiconductor material having a composition formula of In _x1 Al _y1 Ga _{1 -x1- y1} N (0≤x1≤1, 0≤y1≤1, 0≤x1 + y1≤1), for example For example, it may be selected from GaN, AlGaN, InGaN, InAlGaN and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductive semiconductor layer 121 doped with the first dopant may be an n-type semiconductor layer.

The active layer 122 is a layer where electrons (or holes) injected through the first conductive semiconductor layer 121 and holes (or electrons) injected through the second conductive semiconductor layer 123 meet each other. The active layer 122 may transition to a low energy level as electrons and holes recombine, and may generate light having a corresponding wavelength. There is no restriction on the emission wavelength in this embodiment. The active layer 122 transitions to a low energy level as electrons and holes recombine, and may generate light having an ultraviolet wavelength.

In particular, the active layer 122 may include aluminum, and the composition of the aluminum may be adjusted according to a desired ultraviolet wavelength band, whereby the active layer 122 may generate light having a UV-C wavelength.

The active layer 122 may have any one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, or a quantum line structure, and the active layer 122 The structure of is not limited to this.

The second conductive semiconductor layer 123 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and a second dopant may be doped into the second conductive semiconductor layer 123. The second conductivity-type semiconductor layer 123 is a semiconductor material or AlInN having a composition formula of In _x5 Al _y2 Ga _{1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1). , AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of a material selected from. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductive semiconductor layer 123 doped with the second dopant may be a p-type semiconductor layer.

Although not shown, an electron blocking layer EBL may be disposed between the active layer 122 and the second conductive semiconductor layer 123. The electron blocking layer blocks the flow of electrons supplied from the first conductivity type semiconductor layer 121 to the second conductivity type semiconductor layer 123, thereby increasing the probability of electrons and holes recombining in the active layer 122. Can be.

Meanwhile, a buffer layer 10 may be disposed between the substrate 110 and the semiconductor structure 120 to alleviate the Al composition difference.

The buffer layer 10 may have a thickness of 2.5um to 3.5um. Here, if the thickness of the buffer layer 10 is greater than 3.5um, the light output may be reduced as the light absorption rate increases in the buffer layer 10, and if the thickness of the buffer layer is less than 2.5um, stress due to deterioration of AlN quality may be generated. And thereby cause a decrease in light output.

The semiconductor structure 120 may have a first groove H1 through which the first conductive semiconductor layer 121 is exposed through the second conductive semiconductor layer 123 and the active layer 122. The first conductive semiconductor layer 121 may also be partially etched by the first groove H1. There may be a plurality of first grooves H1. The first electrode 151 may be disposed in the first groove H1 to be electrically connected to the first conductive semiconductor layer 121. The second electrode 131 may be disposed under the second conductive semiconductor layer 123.

The first electrode 151 and the second electrode 131 are indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and indium gallium zinc oxide (IGZO). ), Indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), SnO, InO, INZnO, ZnO, IrOx, RuOx, NiO, Ti, Al, Ni , Cr and optional compounds or alloys thereof, and may be formed in at least one layer. The thickness of the first electrode or the second electrode 151, 131 is not particularly limited.

The protective layer 141 may insulate the first electrode 151 from the active layer 122 and the second conductive semiconductor layer 123. The protective layer 141 may be formed entirely on the semiconductor structure 120 except for regions in which the first electrode 151 and the second electrode 131 are formed.

The protective layer 141 may include an insulating material or an insulating resin formed of at least one of an oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr. The protective layer 141 may be selectively formed among, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ . The protective layer 141 may be formed as a single layer or a multilayer, but is not limited thereto.

The reflective electrode layer 132 may be disposed on the second electrode 131. The reflective electrode layer 132 may be formed of a metallic or non-metallic material. The metallic reflective electrode layer 132 is formed of In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Al It may include any one of a metal selected from Ni, Cu, and WTi.

The first insulating layer 142 entirely covers the semiconductor structure 120 on which the reflective electrode layer 132 is disposed. The first insulating layer 142 may include an insulating material or an insulating resin formed of at least one of an oxide, nitride, fluoride, and sulfide having at least one of Al, Cr, Si, Ti, Zn, and Zr. The first insulating layer 142 may be selectively formed of, for example, SiO 2, Si 3 N 4, Al 2 O 3, or TiO 2. The first insulating layer 142 may be formed as a single layer or a multilayer, but is not limited thereto.

The first insulating layer 142 may be a reflective layer. In detail, the first insulating layer 142 includes a structure in which a first layer having a first refractive index and a second layer having a second refractive index are alternately stacked by two or more pairs, and the first layer and the second layer have a refractive index. It may be formed of a conductive or insulating material between 1.5 and 2.4. This structure may be a distributed bragg reflection (DBR) structure. In addition, it may be a structure in which a dielectric layer having a low refractive index and a metal layer are stacked.

By this configuration, most of the light emitted from the active layer 122 in the direction of the second conductivity-type semiconductor layer 123 may be reflected toward the substrate 110. Therefore, the reflection efficiency can be increased, and the light extraction efficiency can be improved.

The first electrode pad 150 may be electrically connected to the first electrode 151 through the first insulating layer 142. The closer the first electrode 151 is to the substrate 110, the larger the area, whereas the closer the first electrode pad 150 is to the substrate 110, the smaller the area.

The second electrode pad 160 may be electrically connected to the second electrode 131 and the reflective electrode layer 132 through the first insulating layer 142.

The first electrode pad 150 and the second electrode pad 160 are In, Co, Si, Ge, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, and may include any one of the metal selected from WTi.

4 is a diagram illustrating a semiconductor device package according to an embodiment of the present invention.

Referring to FIG. 4, the wavelength conversion layer 180 may be disposed on the substrate 110. Light of the blue wavelength band emitted from the active layer 122 by the wavelength conversion layer 180 may be converted into white light. The package of this structure may be a chip scale package (CSP).

The wavelength conversion layer 180 may have a phosphor or a quantum dot dispersed in the polymer resin. The kind of the phosphor is not particularly limited. In order to implement white light, at least one fluorescent material of YAG, TAG, Silicate, Sulfide, or Nitride may be included.

Referring to FIG. 5A, the first conductive semiconductor layer 121, the active layer 122, and the second conductive semiconductor layer 123 are sequentially formed on the substrate 110. Thereafter, at least one first groove H1 exposing the first conductive semiconductor layer 121 may be formed by etching the second conductive semiconductor layer 123 and the active layer 122.

Referring to FIG. 5B, after forming the protective layer 141 in the semiconductor structure 120 in which the first groove H1 is formed, a portion of the protective layer 141 may be removed to form the first electrode 151 and the second electrode 131. have.

The reflective electrode layer 142 is formed on the second electrode 131. The reflective electrode layer 142 may be formed in the order of Ag / Ni / Ti using a sputter. In this case, a plasma cleaning process may be performed to increase the bonding force between the second electrode 131 and the reflective electrode layer 142.

Thereafter, the first insulating layer 142 is formed thereon as a whole. There is no limitation on how to form each layer. A mask pattern may be used or a photoresist may be used.

Referring to FIG. 5C, a portion of the first insulating layer 142 is etched and the first electrode pad 150 and the second electrode pad 160 are formed thereon, respectively.

Referring to FIG. 5D, light extraction lines may be formed and scribed in the thickness direction of the substrate. As the laser, a laser having a relatively long wavelength may be used, for example, a stealth laser having a wavelength of about 800 to 1200 nm may be used.

As the stealth laser, a YAG laser having a wavelength of 1064 nm can be used. The stealth laser has a frequency of 100 Hz, has an output of 0.45 W, and can use a laser spot LS having a diameter of 1 to 2 탆. In addition, the laser oscillator may use a high repetition type, the movement speed of the laser light may be about 480mm / s.

The stealth laser is focused on the inside of the substrate 110 and irradiated to form a plurality of laser spots LS in the depth direction. Depths and spacings of the plurality of laser spots LS may correspond to the above-described light extraction lines.

The laser spot LS is a region formed by heating and melting the substrate 110 by a laser. The laser spot LS is a region in which a crystal structure is deformed into an amorphous structure while the molten portion is cooled. Since the amorphous structure is easily damaged by an impact, the laser spot LS may be used as a starting point for dividing the substrate 110 into the semiconductor semiconductor device 100 as a unit device. Therefore, the region between one surface of the substrate and the light extraction line DL may have a single crystal structure, and the region of the light extraction line DL may have an amorphous structure, thereby causing scattering of emitted light, thereby causing The extraction efficiency can be increased, and the separation process of the semiconductor device can be carried out more easily. In addition, the extraction efficiency of the semiconductor device may be further improved by making the light extraction line DL have an irregular surface.

When the thickness of the substrate is 250 nm, the laser spot LS may be three. At this time, the laser spot LS2 closest to the other surface 112 of the substrate is formed at a depth of 50 μm or more and 150 μm or less from the other surface, and the laser spot LS1 closest to the one surface 111 of the substrate is formed on one surface of the substrate ( 111) can be formed at a height of more than 70㎛ 110㎛. In addition, the spacing of the plurality of laser spots LS1, LS2, LS3 can be controlled to be 40 μm or more and 50 μm or less.

Subsequently, the region irradiated with the laser by impacting the substrate 110 may be cut and separated into a plurality of semiconductor devices. At this time, the side of the cut substrate is formed with a plurality of light extraction lines to increase the roughness and increase the light extraction efficiency.

The semiconductor device may further include an optical member such as a light guide plate, a prism sheet, and a diffusion sheet to function as a backlight unit. In addition, the semiconductor device of the embodiment may be further applied to a display device, a lighting device, and a pointing device.

In this case, the display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

When the main wavelength of light emitted by the semiconductor device is ultraviolet light, the semiconductor device may be applied to a sterilizing device, a medical device, or an exposure device. When applied to the exposure apparatus, it may be applied to a curing machine for curing the resin, an exposure apparatus for curing the photo resist (Photo Resist) applied to the semiconductor process. When applied to a medical device may be applied to the ultraviolet semiconductor device for atopic treatment. When applied to sterilizers, it is applied to humidifiers, air purifiers, refrigerators, etc. to sterilize gas, and to sterilize liquids by irradiating purified water and running water. Can be.

The lighting apparatus may include a light source module including a substrate and a semiconductor device of an embodiment, a heat dissipation unit for dissipating heat of the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside and providing the light source module to the light source module. . Furthermore, the lighting device may include a lamp, a head lamp, a street lamp or the like.

The embodiments of the present invention described above are not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made without departing from the technical spirit of the embodiments. It will be apparent to those skilled in the art.

110: substrate
120: semiconductor structure
121: first conductive semiconductor layer
122: active layer
123: second conductive semiconductor layer
DL1, DL2, DL3: Light Extraction Line

Claims (10)

A substrate including one side and the other side, and a side surface connecting the one side and the other side; And
Disposed on one surface of the substrate, disposed between a first conductive semiconductor layer, a second conductive semiconductor layer, and between the first conductive semiconductor layer and the second conductive semiconductor layer, and having a relative intensity with respect to a wavelength; And a semiconductor structure comprising an active layer for emitting light in which the wavelength of the strongest light is in the ultraviolet region.
The side surface of the substrate includes a plurality of light extraction lines spaced in the thickness direction from the one surface toward the other surface,
The plurality of light extraction lines includes a first light extraction line closest to one surface of the substrate, and a second light extraction line closest to the first light extraction line,
The thickness direction distance from one surface of the substrate to the first light extraction line is longer than the thickness direction distance between the first light extraction line and the second light extraction line,
The thickness of the substrate is a semiconductor device 40 to 100 times the thickness of the semiconductor structure.
The method of claim 1,
The plurality of light extraction lines further comprises a third light extraction line disposed between the second light extraction line and the other surface of the substrate.
The method of claim 2,
The thickness direction distance between the first light extraction line and the second light extraction line is 40% to 64% of the thickness direction distance from one surface of the substrate to the first light extraction line.
The method of claim 2,
The thickness direction distance between the second light extraction line and the third light extraction line is 40% to 64% of the thickness direction distance from one surface of the substrate to the first light extraction line.
The method of claim 1,
The shortest distance between the light extraction line closest to one surface of the substrate and one surface of the substrate among the plurality of light extraction lines is 70㎛ to 110㎛.
The method of claim 5,
The shortest distance between the light extraction line closest to the other surface of the substrate and the other surface of the substrate of the plurality of light extraction lines is 50㎛ to 150㎛.
The method of claim 5,
The interval between the plurality of light extraction lines is a semiconductor device of 40㎛ 50㎛.
The method of claim 5,
The semiconductor device having the widest width of the light extraction line closest to one surface of the substrate of the plurality of light extraction lines.
The method of claim 1,
A reflective electrode layer disposed on the second conductivity type semiconductor layer;
A first insulating layer covering the light emitting structure in which the reflective electrode layer is disposed;
A first electrode pad penetrating the first insulating layer and connected to the first conductive semiconductor layer; And
And a second electrode pad penetrating the first insulating layer and connected to the second conductive semiconductor layer.
The method of claim 1,
The plurality of light extraction lines have a rough surface compared to the remaining area.

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