KR20190126722A - 기판 지지 조립체를 위한 다중-구역 개스킷 - Google Patents

기판 지지 조립체를 위한 다중-구역 개스킷 Download PDF

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Publication number
KR20190126722A
KR20190126722A KR1020190050612A KR20190050612A KR20190126722A KR 20190126722 A KR20190126722 A KR 20190126722A KR 1020190050612 A KR1020190050612 A KR 1020190050612A KR 20190050612 A KR20190050612 A KR 20190050612A KR 20190126722 A KR20190126722 A KR 20190126722A
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KR
South Korea
Prior art keywords
gasket
plate
zone
puck
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020190050612A
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English (en)
Korean (ko)
Inventor
비제이 디. 파케
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20190126722A publication Critical patent/KR20190126722A/ko
Withdrawn legal-status Critical Current

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    • H01L21/67126—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/67017—
    • H01L21/67103—
    • H01L21/67109—
    • H01L21/683—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Gasket Seals (AREA)
KR1020190050612A 2018-05-02 2019-04-30 기판 지지 조립체를 위한 다중-구역 개스킷 Withdrawn KR20190126722A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/969,664 US10957572B2 (en) 2018-05-02 2018-05-02 Multi-zone gasket for substrate support assembly
US15/969,664 2018-05-02

Publications (1)

Publication Number Publication Date
KR20190126722A true KR20190126722A (ko) 2019-11-12

Family

ID=67212077

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190050612A Withdrawn KR20190126722A (ko) 2018-05-02 2019-04-30 기판 지지 조립체를 위한 다중-구역 개스킷

Country Status (5)

Country Link
US (1) US10957572B2 (https=)
JP (2) JP3222163U (https=)
KR (1) KR20190126722A (https=)
CN (2) CN209747491U (https=)
TW (2) TWM588356U (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220158819A (ko) * 2020-03-31 2022-12-01 어플라이드 머티어리얼스, 인코포레이티드 고온 마이크로-존 정전 척
KR20240084380A (ko) * 2022-12-06 2024-06-13 주식회사 이에스티 서셉터와 정전척 기능을 갖는 대면적 디스플레이 제조용 기판 처리 장치 및 그 제조 방법

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US9850573B1 (en) * 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US11990360B2 (en) 2018-01-31 2024-05-21 Lam Research Corporation Electrostatic chuck (ESC) pedestal voltage isolation
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US10957572B2 (en) * 2018-05-02 2021-03-23 Applied Materials, Inc. Multi-zone gasket for substrate support assembly
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
KR20220126763A (ko) * 2020-01-13 2022-09-16 램 리써치 코포레이션 열적 옥사이드 스프레이 코팅과 개선된 열 팽창 매칭을 위한 혼합된 금속 베이스플레이트들
US11784080B2 (en) 2020-03-10 2023-10-10 Applied Materials, Inc. High temperature micro-zone electrostatic chuck
US11482444B2 (en) * 2020-03-10 2022-10-25 Applied Materials, Inc. High temperature micro-zone electrostatic chuck
CN215925072U (zh) * 2020-09-24 2022-03-01 株式会社国际电气 基板处理装置
JP7368343B2 (ja) * 2020-12-11 2023-10-24 日本碍子株式会社 半導体製造装置用部材及びその製法
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
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CN115142128B (zh) * 2021-03-31 2024-06-07 苏州贝莱克金刚石科技有限公司 制备mpcvd单晶金刚石用的产品载台及其应用
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JP7718902B2 (ja) * 2021-08-06 2025-08-05 株式会社フェローテックマテリアルテクノロジーズ ウエハ支持体
US12543527B2 (en) * 2022-01-27 2026-02-03 Ngk Insulators, Ltd. Wafer placement table, and member for semiconductor manufacturing apparatus, using the same
CN114658745A (zh) * 2022-03-09 2022-06-24 江苏金烨钛业有限公司 一种防松动多层金属垫片
US20240312770A1 (en) * 2023-03-16 2024-09-19 Applied Materials, Inc. Apparatus and methods for controlling substrate temperature during processing
CN116026485B (zh) * 2023-03-31 2023-06-23 无锡卓瓷科技有限公司 一种半导体设备用陶瓷加热盘的测试装置
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220158819A (ko) * 2020-03-31 2022-12-01 어플라이드 머티어리얼스, 인코포레이티드 고온 마이크로-존 정전 척
KR20240084380A (ko) * 2022-12-06 2024-06-13 주식회사 이에스티 서셉터와 정전척 기능을 갖는 대면적 디스플레이 제조용 기판 처리 장치 및 그 제조 방법

Also Published As

Publication number Publication date
JP3222163U (ja) 2019-07-11
TW201947693A (zh) 2019-12-16
TWM588356U (zh) 2019-12-21
CN209747491U (zh) 2019-12-06
JP2019194495A (ja) 2019-11-07
US10957572B2 (en) 2021-03-23
US20190341289A1 (en) 2019-11-07
CN110444505A (zh) 2019-11-12

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