KR20190116404A - 적층 기판이 혼입된 전자 조립체 및 그 제조방법 - Google Patents

적층 기판이 혼입된 전자 조립체 및 그 제조방법 Download PDF

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Publication number
KR20190116404A
KR20190116404A KR1020197026396A KR20197026396A KR20190116404A KR 20190116404 A KR20190116404 A KR 20190116404A KR 1020197026396 A KR1020197026396 A KR 1020197026396A KR 20197026396 A KR20197026396 A KR 20197026396A KR 20190116404 A KR20190116404 A KR 20190116404A
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KR
South Korea
Prior art keywords
glass
polymer layer
based substrate
polymer
semiconductor material
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KR1020197026396A
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English (en)
Korean (ko)
Inventor
게리 스테펜 칼라브레스
신 매튜 가너
밍퀀 헤
제임스 로버트 매튜스
Original Assignee
코닝 인코포레이티드
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Application filed by 코닝 인코포레이티드 filed Critical 코닝 인코포레이티드
Publication of KR20190116404A publication Critical patent/KR20190116404A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H01L51/0097—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H01L27/3225—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L51/052—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
KR1020197026396A 2017-02-14 2018-02-14 적층 기판이 혼입된 전자 조립체 및 그 제조방법 KR20190116404A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762458785P 2017-02-14 2017-02-14
US62/458,785 2017-02-14
PCT/US2018/018129 WO2018152169A1 (en) 2017-02-14 2018-02-14 Electronic assemblies incorporating laminate substrates and methods of fabricating the same

Publications (1)

Publication Number Publication Date
KR20190116404A true KR20190116404A (ko) 2019-10-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197026396A KR20190116404A (ko) 2017-02-14 2018-02-14 적층 기판이 혼입된 전자 조립체 및 그 제조방법

Country Status (7)

Country Link
US (1) US20200043951A1 (zh)
EP (1) EP3583634A1 (zh)
JP (1) JP2020507937A (zh)
KR (1) KR20190116404A (zh)
CN (1) CN110462861A (zh)
TW (1) TWI778019B (zh)
WO (1) WO2018152169A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111886268B (zh) * 2018-03-23 2023-05-30 株式会社资生堂 使用核-壳型聚合物颗粒的化妆品用原料和水包油型乳化化妆品
EP3770194A4 (en) * 2018-03-23 2021-12-15 Shiseido Company, Ltd. COSMETIC INGREDIENT WITH CORE-CROWN POLYMER PARTICLES AND COSMETIC OIL-IN-WATER EMULSION
US11285096B2 (en) * 2018-03-23 2022-03-29 Shiseido Company, Ltd. Core-corona polymer particles
TWI750902B (zh) * 2020-11-18 2021-12-21 友達光電股份有限公司 薄膜電晶體及其形成方法
US11647645B2 (en) * 2021-01-13 2023-05-09 Tpk Advanced Solutions Inc. Cover plate used in electronic device, electronic device, and method of manufacturing cover plate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5258207B2 (ja) * 2007-05-29 2013-08-07 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP5523803B2 (ja) * 2009-11-27 2014-06-18 富士フイルム株式会社 放射線センサおよび放射線画像撮影装置
US20120280368A1 (en) * 2011-05-06 2012-11-08 Sean Matthew Garner Laminated structure for semiconductor devices
US8901544B2 (en) * 2011-12-06 2014-12-02 Corning Incorporated Organic thin film transistor with ion exchanged glass substrate
CN106463620B (zh) * 2014-04-16 2019-04-12 里兰斯坦福初级大学理事会 用于高性能电子和光电子器件的极性弹性体
WO2016025320A1 (en) * 2014-08-12 2016-02-18 Corning Incorporated Organic surface treatments for display glasses to reduce esd
KR102388635B1 (ko) * 2014-11-05 2022-04-20 코닝 인코포레이티드 비평면 특징들을 가지는 유리 물품들 및 무알칼리 유리 요소들

Also Published As

Publication number Publication date
TW201904033A (zh) 2019-01-16
WO2018152169A1 (en) 2018-08-23
JP2020507937A (ja) 2020-03-12
CN110462861A (zh) 2019-11-15
US20200043951A1 (en) 2020-02-06
TWI778019B (zh) 2022-09-21
EP3583634A1 (en) 2019-12-25

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