KR20190080594A - Components of susceptor for semiconductor by friction diffusion welding and manufacturing method thereof - Google Patents

Components of susceptor for semiconductor by friction diffusion welding and manufacturing method thereof Download PDF

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KR20190080594A
KR20190080594A KR1020170183142A KR20170183142A KR20190080594A KR 20190080594 A KR20190080594 A KR 20190080594A KR 1020170183142 A KR1020170183142 A KR 1020170183142A KR 20170183142 A KR20170183142 A KR 20170183142A KR 20190080594 A KR20190080594 A KR 20190080594A
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susceptor
semiconductor
sections
chamber
section
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KR1020170183142A
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KR102592097B1 (en
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황두일
김현중
백경우
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(주)보부하이테크
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention provides a semiconductor susceptor components using friction diffusion bonding, which is an assembly coupled to at least a part of a susceptor, wherein the assembly is divdied into a plurality of sections in a longitudinal direction. A portion in which the plurality of sections come in contact with each other is bonded thereto by using a friction diffusion bonding means. One of the plurality of sections protrudes to the outside of a chamber. The present invention also provides a manufacturing method thereof.

Description

마찰확산접합을 이용한 반도체용 서셉터의 부품 및 그 제조방법{Components of susceptor for semiconductor by friction diffusion welding and manufacturing method thereof}BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor susceptor,

본 발명은 반도체용 서셉터의 부품 및 그 제조방법에 관한 것으로서, 더 상세하게는 반도체 및 LCD 공정에 사용되는 서셉터의 부속품으로서, 공정 가스에 영향을 받지 않도록 마찰확산접합을 이용한 반도체용 서셉터의 부품 및 그 제조방법에 관한 것이다.The present invention relates to a component of a semiconductor susceptor and a method of manufacturing the same, and more particularly, to an accessory of a susceptor used in semiconductor and LCD processes, And a manufacturing method thereof.

종래의 반도체 및 LCD 공정에 적용되는 서셉터의 부품들은 챔버 내부의 공정 가스에 반응하여 부식되기가 매우 쉽다. 이 경우, 부식으로 인한 챔버 내부의 오염 발생으로 인하여 공정 불량을 발생시켜 불활성 가스를 사용하는 공정에 적용하기에 어렵다는 단점이 있다.The components of the susceptor applied to conventional semiconductor and LCD processes are very susceptible to corrosion in response to process gases inside the chamber. In this case, there is a disadvantage that it is difficult to apply the process to the process of using an inert gas because of the occurrence of contamination inside the chamber due to corrosion, resulting in a process failure.

특히, 반도체 및 LCD 공정, 예를 들어, 화학기상증착(CVD) 또는 에칭(etching)에 사용되어지는 가스의 대부분이 H 또는 F 계열의 가스를 사용하므로, 종래의 접합층에 사용되어지는 첨가물로 사용되는 구리(Cu)나 은(Ag) 등이 서로 반응하여 챔버의 내부를 오염시키게 된다.Particularly, since most of the gases used for semiconductor and LCD processes, for example, chemical vapor deposition (CVD) or etching, use H or F series gases, the additives used in conventional bonding layers The copper (Cu) or silver (Ag) used reacts with each other and contaminates the inside of the chamber.

본 발명은 상기와 같은 문제점을 포함하여 여러 문제점들을 해결하기 위한 것으로서, 파손 및 마모가 적고, 공정가스에 의한 접합부의 부식을 방지함으로써 제품의 수명을 증가시킬 수 있는 마찰확산접합을 이용한 반도체용 서셉터의 부품 및 그 제조방법을 제공하는 것을 목적으로 한다. 그러나 이러한 과제는 예시적인 것으로, 이에 의해 본 발명의 범위가 한정되는 것은 아니다.Disclosure of Invention Technical Problem [8] The present invention has been made to solve the various problems including the above problems, and it is an object of the present invention to provide a semiconductor device using a friction diffusion bonding which can reduce the breakage and abrasion, It is an object of the present invention to provide a component of a susceptor and a method of manufacturing the same. However, these problems are exemplary and do not limit the scope of the present invention.

본 발명의 일 관점에 따르면, 마찰확산접합을 이용한 반도체용 서셉터의 부품을 제공한다. 상기 마찰확산접합을 이용한 반도체용 서셉터의 부품은 서셉터의 적어도 어느 일부분에 결합되는 조립체로서, 상기 조립체는 길이방향으로 복수개의 섹션으로 구분되고, 상기 복수개의 섹션이 서로 맞닿는 부분은 마찰확산접합방법을 이용하여 접합되며, 상기 복수개의 섹션 중 어느 하나는 챔버의 외부로 돌출될 수 있다.According to one aspect of the present invention, there is provided a part of a semiconductor susceptor using a friction diffusion bonding. Wherein a part of the susceptor for semiconductor use using the friction diffusion bonding is coupled to at least a part of the susceptor, the assembly is divided into a plurality of sections in the longitudinal direction, , And one of the plurality of sections may protrude out of the chamber.

본 발명의 다른 관점에 따르면, 마찰확산접합을 이용한 반도체용 서셉터 부품의 제조방법을 제공한다. 상기 마찰확산접합을 이용한 반도체용 서셉터 부품의 제조방법은 조립체를 형성하는 단계; 및 상기 조립체를 서셉터의 적어도 어느 일부분에 용접하는 단계;를 포함하고, 상기 조립체는 길이 방향으로 복수개의 섹션으로 구분되며, 상기 조립체를 형성하는 단계는, 마찰확산접합방법을 이용하여 상기 복수개의 섹션이 서로 맞닿는 부분을 접합하는 단계;를 포함할 수 있다.According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor susceptor part using friction diffusion bonding. A method of manufacturing a semiconductor susceptor part using the friction diffusion bonding includes: forming an assembly; And welding the assembly to at least a portion of the susceptor, wherein the assembly is longitudinally divided into a plurality of sections, the forming of the assembly comprising: And joining the portions where the sections abut on each other.

상기 마찰확산접합을 이용한 반도체용 서셉터 부품의 제조방법에 있어서, 상기 서셉터에 용접되어 결합된 상기 조립체를 상기 챔버에 조립할 때, 상기 복수개의 섹션 중 어느 하나는 챔버의 외부로 돌출되도록 고정하는 단계를 포함할 수 있다.In the method for manufacturing a semiconductor susceptor part using the friction diffusion bonding, when assembling the assembly welded to the susceptor into the chamber, one of the plurality of sections is fixed so as to protrude out of the chamber Step < / RTI >

상기한 바와 같이 이루어진 본 발명의 실시예에 따르면, 파손 및 마모가 적고, 공정가스에 의한 접합부의 부식을 방지함으로써 제품의 수명을 증가시킬 수 있는 마찰확산접합을 이용한 반도체용 서셉터의 부품 및 그 제조방법을 구현함으로써, 챔버의 오염을 방지할 수 있다. 물론 이러한 효과에 의해 본 발명의 범위가 한정되는 것은 아니다.According to the embodiment of the present invention as described above, the parts of the semiconductor susceptor using the friction diffusion bonding that can reduce the breakage and abrasion and prevent the corrosion of the joint by the process gas, By implementing the manufacturing method, contamination of the chamber can be prevented. Of course, the scope of the present invention is not limited by these effects.

도 1은 본 발명의 일 실시예에 따른 반도체용 서셉터의 샤프트를 개략적으로 도해하는 도면이다.
도 2는 본 발명의 일 실시예에 따른 반도체용 서셉터의 샤프트의 사진이다.
도 3은 본 발명의 다른 실시예에 따른 서셉터의 단자를 개략적으로 도해하는 공정순서도이다.
1 is a schematic illustration of a shaft of a susceptor for semiconductor according to an embodiment of the present invention.
2 is a photograph of a shaft of a semiconductor susceptor according to an embodiment of the present invention.
3 is a process flow diagram schematically illustrating a terminal of a susceptor according to another embodiment of the present invention.

이하, 첨부된 도면들을 참조하여 본 발명의 실시예를 상세히 설명하면 다음과 같다. 그러나 본 발명은 이하에서 개시되는 실시예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있는 것으로, 이하의 실시예는 본 발명의 개시가 완전하도록 하며, 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이다. 또한 설명의 편의를 위하여 도면에서는 구성 요소들이 그 크기가 과장 또는 축소될 수 있다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, Is provided to fully inform the user. Also, for convenience of explanation, the components may be exaggerated or reduced in size.

본 발명에서, 마찰확산접합방법은 반도체 및 LCD 공정에 적용되는 서셉터의 부품뿐만 아니라, 자동차의 스페이스 후레임 및 중장비(피스톤, 가이드 로더 등), 기계 도구(드릴,탭, 앤드밀 및 렌치 등)의 제조 등에 응용될 수 있다. In the present invention, the friction diffusion bonding method can be applied not only to the parts of the susceptor applied to the semiconductor and LCD processes, but also to the space frame of automobiles and heavy equipment (pistons, guide loaders, etc.), machine tools (drills, taps, And the like.

상기 마찰확산접합방법은 마찰접합, 확산접합, 마찰교반 및 마찰용접 등의 용어로 사용될 수 있으며, 이는 예시적인 것에 불과하며, 당해 기술분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 다른 용어로 대체 가능하다.The friction diffusion bonding method can be used in terms of friction bonding, diffusion bonding, friction stir welding, friction welding, and the like, which are merely illustrative. Those skilled in the art will understand that various modifications and equivalent Other terms can be substituted.

도 1은 본 발명의 일 실시예에 따른 반도체용 서셉터의 샤프트를 개략적으로 도해하는 도면이고, 도 2는 본 발명의 일 실시예에 따른 반도체용 서셉터의 샤프트의 사진이다.FIG. 1 is a schematic view of a shaft of a semiconductor susceptor according to an embodiment of the present invention, and FIG. 2 is a photograph of a shaft of a semiconductor susceptor according to an embodiment of the present invention.

도 1 및 도 2를 참조하면, 본 발명은 반도체 및 LCD 히터 블록(Heater Block), 예를 들어, 서셉터(Susceptor)의 샤프트(Shaft)의 2종 접합기술에 관한 것이다. 진공 챔버 내에 알루미늄 히터(Al Heater)의 샤프트 조립시 알루미늄의 연한 성질로 인하여 챔버 외부에 서셉터를 결합할 경우 서셉터의 샤프트 나사산이 마모 되는 것을 방지하고, 강도를 보상할 수 있도록 서셉터 샤프트를 2종 금속의 접합하여 형성한다. 이 때, 2종 금속이 접합되는 부위(제 3 원소)의 챔버 내부의 부식을 방지하고자 2종 금속을 마찰 확산 접합을 이용하여 제3원소를 첨가하지 않고 2종 금속을 접합한다.Referring to FIGS. 1 and 2, the present invention relates to a double junction technique of a semiconductor and a heater block, for example, a shaft of a susceptor. When aluminum susceptor is assembled to the outside of the chamber due to the soft nature of aluminum in the assembly of aluminum heater in the vacuum chamber, susceptor shaft threads are prevented from being worn and susceptor shaft And is formed by bonding two kinds of metals. At this time, to prevent the corrosion of the inside of the chamber where the second metal is bonded (the third element), the second metal is bonded to the second metal by the friction diffusion bonding without adding the third element.

또한, 종래의 제 3 원소가 포함된 합금에 의해 접합되었을 경우 공정가스에 의한 접합부 부식으로 인하여 히터의 접합부 강도저하를 유발한다. 또, 제품 수명을 낮추는 문제점과 접합부 부식에 의한 챔버의 오염을 유발하기 때문에, 이를 보완하고자, 본 발명에서는 제 3 원소를 투입하지 않고, 샤프트와 보강용 접합 재료를 직접 접합하고자 한다.In addition, when bonded by an alloy containing a conventional third element, the strength of the joint portion of the heater is lowered due to the corrosion of the joint due to the process gas. In addition, in order to compensate for the problem of lowering the product life and contamination of the chamber due to corrosion of the joint, the present invention intends to directly bond the shaft and the reinforcing bonding material without injecting the third element.

예컨대, 본 발명의 일 실시예에 따른 마찰확산접합을 이용한 반도체용 서셉터의 샤프트는 서셉터(4)의 적어도 어느 일부분에 결합되는 조립체로서, 길이방향으로 복수개의 섹션으로 구분되고, 상기 복수개의 섹션이 서로 맞닿는 부분은 마찰확산접합방법을 이용하여 접합되며, 상기 복수개의 섹션 중 어느 하나는 챔버(9)의 외부로 돌출될 수 있다.For example, a shaft of a susceptor for semiconductor using a friction diffusion bonding according to an embodiment of the present invention is an assembly that is coupled to at least a part of the susceptor 4, is divided into a plurality of sections in the longitudinal direction, The portions where the sections are in contact with each other are joined using the friction diffusion bonding method, and one of the plurality of sections may protrude out of the chamber (9).

구체적으로 상기 복수개의 섹션은 길이방향으로 제 1 섹션(1), 제 2 섹션(2) 및 제 3 섹션(3)으로 구분될 수 있으며, 제 1 섹션(1)과 제 2 섹션(2)이 서로 맞닿는 부분 또는 제 2 섹션(2)과 제 3 섹션(3)이 서로 맞닿는 부분은 마찰확산접합방법에 의해 서로 접합된다. 제 2 섹션(2)과 제 3 섹션(3) 사이에는 실링부재(6)가 개재되어 챔버(9)의 관통공을 실링한다.Specifically, the plurality of sections may be divided into a first section 1, a second section 2 and a third section 3 in the longitudinal direction, and the first section 1 and the second section 2 The portions that contact each other or the portions where the second section 2 and the third section 3 abut each other are joined to each other by the friction diffusion bonding method. A sealing member 6 is interposed between the second section 2 and the third section 3 to seal the through-hole of the chamber 9.

여기에서, 제 1 섹션(1) 및 제 2 섹션(2)은 알루미늄 또는 알루미늄 합금의 재질로 이루어질 수 있으며, 제 3 섹션(3)은 스테인리스 스틸(SUS) 또는 니켈(Ni)의 재질로 이루어질 수 있다.Here, the first section 1 and the second section 2 may be made of aluminum or an aluminum alloy, and the third section 3 may be made of stainless steel (SUS) or nickel (Ni) have.

도 1의 (b)를 참조하면, 제 1 섹션(1) 내지 제 3 섹션(3)이 조립된 조립체가 서셉터(4)의 적어도 어느 일부에 기계적으로 연결되어 고정되고, 실링부재(6)를 기준으로 제 1 섹션(1) 및 제 2 섹션(2)은 챔버(9)의 내부에 배치된다. 제 3 섹션(3)은 챔버(9)의 외부로 돌출되도록 고정되며, 챔버의 바깥쪽에서 2종 금속 재질의 제 3 섹션(3)을 너트 또는 클램프(clamp)로 고정할 수 있다.1 (b), an assembly in which the first to third sections 3 to 3 are assembled is mechanically connected and fixed to at least a part of the susceptor 4, and the sealing member 6, The first section 1 and the second section 2 are disposed inside the chamber 9. [ The third section 3 is fixed to protrude out of the chamber 9 and can be fixed with a nut or a clamp at the outside of the chamber by a third section 3 made of a two-kind metal.

도 3은 본 발명의 다른 실시예에 따른 서셉터의 단자를 개략적으로 도해하는 공정순서도이다.3 is a process flow diagram schematically illustrating a terminal of a susceptor according to another embodiment of the present invention.

도 3을 참조하면, 본 발명은 반도체 및 LCD 히터 블록(Heater Block), 예를 들어, 서셉터(Susceptor)의 단자(feedthrough)의 2종 접합기술에 관한 것이다. 상기 단자는 예컨대, 도 1의 (b)에 도시된 서셉터(4)의 적어도 어느 일부분에 결합되는 조립체로서, 길이방향으로 제 4 섹션(11) 및 제 5 섹션(13)으로 구분될 수 있으며, 제 4 섹션(11)과 제 5 섹션(13)이 서로 맞닿는 접합면(12)은 마찰확산접합방법에 의해 서로 접합된다. 이 때, 제 4 섹션(11)과 제 5 섹션(13) 사이에는 실링부재(미도시)가 개재되어 챔버(9)의 관통공을 실링한다.Referring to FIG. 3, the present invention relates to a double junction technique of a semiconductor and an LCD heater block, for example, a feedthrough of a susceptor. The terminal is, for example, an assembly which is coupled to at least a portion of the susceptor 4 shown in Figure 1 (b) and can be longitudinally divided into a fourth section 11 and a fifth section 13 And the joining surfaces 12 where the fourth section 11 and the fifth section 13 are in contact with each other are joined to each other by the friction diffusion bonding method. At this time, a sealing member (not shown) is interposed between the fourth section 11 and the fifth section 13 to seal the through-hole of the chamber 9.

도 3의 (b)를 참조하면, 제 4 섹션(11) 및 제 5 섹션(13)이 조립된 조립체가 도 1의 (b)에 도시된 서셉터(4)의 적어도 어느 일부에 기계적으로 연결되어 고정되고, 실링부재를 기준으로 제 4 섹션(11)은 챔버(9)의 내부에 배치된다. 제 5 섹션(13)은 챔버(9)의 외부로 돌출되도록 고정되며, 챔버의 바깥쪽에서 2종 금속 재질의 제 5 섹션(13)을 너트 또는 클램프(clamp)로 고정할 수 있다.3 (b), the assembly in which the fourth section 11 and the fifth section 13 are assembled is mechanically connected to at least a part of the susceptor 4 shown in Fig. 1 (b) And the fourth section 11 is disposed inside the chamber 9 with respect to the sealing member. The fifth section 13 is fixed to protrude out of the chamber 9 and the fifth section 13 of the second kind metal can be fixed by a nut or a clamp outside the chamber.

상술한 바와 같이, 본 발명은 반도체 장비의 챔버 안에는 진공상태에서 여러 가지 가스를 사용한다. 스테인리스 스틸 재질은 부식으로 인한 어려움 때문에, 챔버 안에는 사용이 불가능 하다. 하지만, 히터 블록의 탈부착시 알루미늄과 같은 재질은 취성이 약하기 때문에 잦은 탈부착으로 인해 재품이 손상 될 수 있다. 그러므로, 알루미늄 및 알루미늄 합금이 아닌 스테인리스 스틸 재질로 접합을 하여 본 발명품으로 인하여 재품의 수명이 늘어나는 효과가 있다.As described above, the present invention uses various gases in a vacuum state in a chamber of a semiconductor equipment. Stainless steel materials can not be used in chambers due to corrosion problems. However, when the heater block is detached and attached, materials such as aluminum may be damaged due to frequent detachment due to weak brittleness. Therefore, the joining is performed with a stainless steel material other than aluminum and an aluminum alloy, and the lifetime of the product is increased due to the present invention.

본 발명은 도면에 도시된 실시예를 참고로 설명되었으나 이는 예시적인 것에 불과하며, 당해 기술분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 다른 실시예가 가능하다는 점을 이해할 것이다. 따라서 본 발명의 진정한 기술적 보호 범위는 첨부된 특허청구범위의 기술적 사상에 의하여 정해져야 할 것이다.While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

1 : 제 1 섹션
2 : 제 2 섹션
3 : 제 3 섹션
4 : 서셉터
6 : 실링부재
9 : 챔버
11 : 제 4 섹션
12 : 접합면
13 : 제 5 섹션
1: first section
2: second section
3: the third section
4: susceptor
6: sealing member
9: chamber
11: fourth section
12:
13: fifth section

Claims (3)

서셉터의 적어도 어느 일부분에 결합되는 조립체로서,
상기 조립체는 길이방향으로 복수개의 섹션으로 구분되고, 상기 복수개의 섹션이 서로 맞닿는 부분은 마찰확산접합방법을 이용하여 접합되며, 상기 복수개의 섹션 중 어느 하나는 챔버의 외부로 돌출되는,
마찰확산접합을 이용한 반도체용 서셉터의 부품.
An assembly coupled to at least a portion of a susceptor,
Wherein the assembly is divided into a plurality of sections in the longitudinal direction and the portions where the plurality of sections are abutted to each other are joined using a friction diffusion bonding method and one of the plurality of sections is projected to the outside of the chamber,
Parts of Susceptor for Semiconductor Using Friction Diffusion Bonding.
조립체를 형성하는 단계; 및
상기 조립체를 서셉터의 적어도 어느 일부분에 용접하는 단계;를 포함하고,
상기 조립체는 길이 방향으로 복수개의 섹션으로 구분되며,
상기 조립체를 형성하는 단계는,
마찰확산접합방법을 이용하여 상기 복수개의 섹션이 서로 맞닿는 부분을 접합하는 단계;를 포함하는,
마찰확산접합을 이용한 반도체용 서셉터 부품의 제조방법.
Forming an assembly; And
And welding the assembly to at least a portion of the susceptor,
The assembly is divided into a plurality of sections in the longitudinal direction,
Wherein forming the assembly comprises:
And joining portions of the plurality of sections abutting each other using a friction diffusion bonding method.
Method for manufacturing semiconductor susceptor parts using friction diffusion bonding.
제 2 항에 있어서,
상기 서셉터에 용접되어 결합된 상기 조립체를 상기 챔버에 조립할 때, 상기 복수개의 섹션 중 어느 하나는 챔버의 외부로 돌출되도록 고정하는 단계를 포함하는,
마찰확산접합을 이용한 반도체용 서셉터 부품의 제조방법.
3. The method of claim 2,
And assembling the assembly welded and bonded to the susceptor into the chamber, wherein one of the plurality of sections is secured to protrude out of the chamber.
Method for manufacturing semiconductor susceptor parts using friction diffusion bonding.
KR1020170183142A 2017-12-28 2017-12-28 Combination structure of components of susceptor for semiconductor by friction diffusion welding and chamber and combination method thereof KR102592097B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200405384Y1 (en) * 2005-10-07 2006-01-10 주식회사 케이,에스,피 Economical large rotor shaft utilizing flywheel type friction welding
KR20080067561A (en) * 2007-01-16 2008-07-21 주식회사 메카로닉스 Pedestal heater block of cvd
KR20080099442A (en) * 2007-05-09 2008-11-13 신현택 Plunger tip for die casting machine
KR20170052341A (en) * 2015-11-04 2017-05-12 (주)포인트엔지니어링 Susceptor and Vaccum chamber including the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR200405384Y1 (en) * 2005-10-07 2006-01-10 주식회사 케이,에스,피 Economical large rotor shaft utilizing flywheel type friction welding
KR20080067561A (en) * 2007-01-16 2008-07-21 주식회사 메카로닉스 Pedestal heater block of cvd
KR20080099442A (en) * 2007-05-09 2008-11-13 신현택 Plunger tip for die casting machine
KR20170052341A (en) * 2015-11-04 2017-05-12 (주)포인트엔지니어링 Susceptor and Vaccum chamber including the same

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