KR20190060780A - Sealing composition for LED - Google Patents

Sealing composition for LED Download PDF

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KR20190060780A
KR20190060780A KR1020197010081A KR20197010081A KR20190060780A KR 20190060780 A KR20190060780 A KR 20190060780A KR 1020197010081 A KR1020197010081 A KR 1020197010081A KR 20197010081 A KR20197010081 A KR 20197010081A KR 20190060780 A KR20190060780 A KR 20190060780A
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carbon atoms
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organopolysiloxane
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KR102211570B1 (en
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케이스케 슈토
타쿠 카토
준페이 코바야시
마사요시 스즈키
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닛산 가가쿠 가부시키가이샤
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/10Materials in mouldable or extrudable form for sealing or packing joints or covers
    • C09K3/1006Materials in mouldable or extrudable form for sealing or packing joints or covers characterised by the chemical nature of one of its constituents
    • C09K3/1018Macromolecular compounds having one or more carbon-to-silicon linkages
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K3/00Materials not provided for elsewhere
    • C09K3/10Materials in mouldable or extrudable form for sealing or packing joints or covers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/296Organo-silicon compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2200/00Chemical nature of materials in mouldable or extrudable form for sealing or packing joints or covers
    • C09K2200/06Macromolecular organic compounds, e.g. prepolymers
    • C09K2200/068Containing also other elements than carbon, oxygen or nitrogen in the polymer main chain
    • C09K2200/0685Containing silicon

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  • Sealing Material Composition (AREA)

Abstract

[과제] LED용 봉지재 조성물, 해당 조성물을 경화하여 얻어지는 경화물, 및 해당 경화물에 의해 LED소자가 봉지된 LED장치의 제공.
[해결수단] (A)하기 식(1)로 표시되는 3종의 구조단위를 갖고, 규소원자와 결합한 알케닐기를 1분자 중에 적어도 2개 갖는 직쇄상의 오가노폴리실록산,
(R1R2R3SiO1/2)a(R4R5SiO2/2)b(R6 2SiO2/2)c (1)
(B)하기 식(2)로 표시되는 3종의 구조단위를 갖고, 규소원자와 결합한 수소원자를 1분자 중에 적어도 2개 갖는 직쇄상의 오가노폴리실록산,
(R7R8R9SiO1/2)d(R10R11SiO2/2)e(R12 2SiO2/2)f (2)

(C)하이드로실릴화반응촉매
를 포함하고, 상기 식(1) 중의 R4 및 상기 식(2) 중의 R10의 적어도 일방은 비페닐릴기를 나타내는, LED용 봉지재 조성물.
[PROBLEMS] To provide a sealing composition for LED, a cured product obtained by curing the composition, and an LED device in which the LED element is sealed by the cured product.
(A) A linear organopolysiloxane having three kinds of structural units represented by the following formula (1) and having at least two alkenyl groups bonded to silicon atoms in one molecule,
(R 1 R 2 R 3 SiO 1/2 ) a (R 4 R 5 SiO 2/2 ) b (R 6 2 SiO 2/2 ) c (1)
(B) a linear organopolysiloxane having three kinds of structural units represented by the following formula (2) and having at least two hydrogen atoms bonded to silicon atoms in one molecule,
(R 7 R 8 R 9 SiO 1/2 ) d (R 10 R 11 SiO 2/2 ) e (R 12 2 SiO 2/2 ) f (2)
And
(C) hydrosilylation reaction catalyst
, Wherein at least one of R 4 in the formula (1) and R 10 in the formula (2) represents a biphenylyl group.

Description

LED용 봉지재 조성물Sealing composition for LED

본 발명은, LED용 봉지재 조성물, 해당 조성물을 경화하여 얻어지는 경화물, 및 해당 경화물에 의해 LED소자가 봉지된 LED장치에 관한 것이다.The present invention relates to an LED encapsulant composition, a cured product obtained by curing the composition, and an LED device encapsulated with the LED element by the cured product.

실리콘 조성물은 내후성, 내열성, 경도, 신장 등의 고무적 성질이 우수한 경화물을 형성하는 점에서, LED장치에 있어서의 LED소자, 전극, 기판 등의 보호를 목적으로 사용되고 있다. 또한, LED장치에는 도전성이 좋은 은 혹은 은함유 합금이 전극으로서 사용되고, 휘도를 향상시키기 위해 기판에는 은도금이 실시되어 있는 경우가 있다.The silicone composition is used for the purpose of protecting an LED element, an electrode, a substrate, and the like in an LED device in that it forms a cured product having excellent rubber properties such as weather resistance, heat resistance, hardness and elongation. In addition, a silver or silver-containing alloy having good conductivity is used as an electrode in an LED device, and silver plating is sometimes applied to the substrate in order to improve brightness.

일반적으로, 실리콘 조성물로 이루어진 경화물은 가스투과성이 높고, 이것을 광의 강도가 강하고, 발열이 큰 고휘도 LED에 이용한 경우에, 환경 중의 부식성 가스에 의한 봉지재의 변색이나, 전극이나 기판에 도금된 은의 부식에 의한 휘도의 저하가 발생한다는 과제가 있다.Generally, when a cured product made of a silicone composition has high gas permeability and is used in a high-brightness LED having a high light intensity and a large heat generation, the cured product of the silicone composition may cause discoloration of the sealing material due to corrosive gas in the environment, There is a problem in that the luminance is lowered by the light emitting diode.

특허문헌 1에는, (A)규소원자에 결합하는 알케닐기를 적어도 2개 함유하는 디오가노폴리실록산, (B)SiO4/2단위, Vi(R2)2SiO1/2단위 및 R2 3SiO1/2단위로 이루어진 레진구조의 오가노폴리실록산, (C)한 분자 중에 규소원자에 결합하는 수소원자를 적어도 2개 함유하는 오가노하이드로젠폴리실록산, 및 (D)백금속 금속계 촉매를 함유하여 이루어진 부가경화형 실리콘 조성물이 제안되어 있다.Patent Document 1 discloses a diorganopolysiloxane containing (A) at least two alkenyl groups bonded to silicon atoms, (B) a SiO 4/2 unit, a Vi (R 2 ) 2 SiO 1/2 unit and a R 2 3 SiO organopolysiloxanes of the resin structure, consisting of a 1/2 units, (C) made in containing organo hydrogen polysiloxane, and (D) the back metal metal-based catalyst containing at least two hydrogen atoms bonded to silicon atoms in a molecule An addition-curable silicone composition has been proposed.

그러나, 이러한 부가경화형 실리콘 조성물은, 환경 중의 부식성 가스를 매우 투과시키기 쉬워, 용이하게 전극이나 기판에 도금된 은이 부식되고 있었다.However, this addition-curable silicone composition easily permeates the corrosive gas in the environment, and the silver plated on the electrode or the substrate is easily corroded.

특허문헌 2에는, (A)평균단위식으로 표시되는 오가노폴리실록산, 임의의 (B)한 분자 중에 적어도 2개의 알케닐기를 갖고, 규소원자결합 수소원자를 갖지 않는 직쇄상 오가노폴리실록산, (C)한 분자 중에 적어도 2개의 규소원자결합 수소원자를 갖는 오가노폴리실록산, 및 (D)하이드로실릴화반응용 촉매로부터 적어도 이루어진 경화성 실리콘 조성물이 제안되어 있다.Patent Document 2 discloses an organopolysiloxane represented by (A) an average unit formula, (B) a linear organopolysiloxane having at least two alkenyl groups in one molecule and not having silicon atom-bonded hydrogen atoms, (C ) An organopolysiloxane having at least two silicon atom-bonded hydrogen atoms in one molecule, and (D) a hydrosilylation catalyst application catalyst.

특허문헌 2에 기재되어 있는 경화성 실리콘 조성물은, 높은 하이드로실릴화반응성을 갖고, 가스투과성이 낮은 경화물을 형성하는 오가노폴리실록산, 높은 반응성을 갖고, 가스투과성이 낮은 경화물을 형성하는 경화성 실리콘 조성물, 가스투과성이 낮은 경화물을 제공한다고 되어 있다.The curable silicone composition described in Patent Document 2 is an organopolysiloxane having high hydrosilylation reactivity and forming a cured product having low gas permeability, a curable silicone composition having a high reactivity and forming a cured product having low gas permeability , And a cured product having low gas permeability.

그러나, 전극이나 기판이 은도금된 LED기판을 특허문헌 2에 기재되어 있는 경화성 실리콘 조성물로 봉지해도, 예를 들어, 황분위기하 80℃의 환경에서는 은도금이 부식되어 있는 것을 알 수 있고, LED가 발광하는 광의 밝기가 저하된다는 문제가 있었다.However, even if the electrode or the substrate is sealed with the curable silicone composition described in Patent Document 2, the silver plating is corroded in an environment of 80 占 폚 under a sulfur atmosphere, for example, There is a problem in that the brightness of the light is reduced.

일본특허공개 2000-198930호 공보Japanese Patent Application Laid-Open No. 2000-198930 일본특허공개 2014-84417호 공보Japanese Patent Application Laid-Open No. 2014-84417

본 발명의 목적은, 상기 사정을 감안하여 이루어진 것으로, 내열투명성, LED기판과의 밀착성이 우수하고, 또한 황분위기하 80℃라는 과혹한 환경하에 있어서도 은도금이 부식되지 않는 LED용 봉지재 조성물, 해당 조성물을 경화하여 얻어지는 경화물, 및 해당 경화물에 의해 LED소자가 봉지된 LED장치를 제공하는 것에 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide an LED encapsulant composition which is excellent in heat resistance and adhesion to an LED substrate and which does not corrode silver plating even under a severe environment of 80 DEG C in a sulfur atmosphere, A cured product obtained by curing the composition, and an LED device in which the LED element is sealed by the cured product.

본 발명자들은, 상기의 과제를 해결하기 위해 예의 검토를 거듭한 결과, LED용 봉지재 조성물로서, (A)3종의 구조단위를 갖고, 규소원자와 결합한 알케닐기를 1분자 중에 적어도 2개 갖는 직쇄상의 오가노폴리실록산, (B)3종의 구조단위를 갖고, 규소원자와 결합한 수소원자를 1분자 중에 적어도 2개 갖는 직쇄상의 오가노폴리실록산 및 (C)하이드로실릴화반응촉매를 포함하는 조성물을 구성할 때, 오가노폴리실록산(A) 및 오가노폴리실록산(B)의 적어도 일방을, 규소원자에 결합된 비페닐릴기를 갖는 구조단위를 갖는 오가노폴리실록산으로 하면, 이 조성물에 의해 형성된 LED용 봉지재는, 내열투명성, LED기판과의 밀착성이 우수하고, 또한 황분위기하 80℃라는 과혹한 환경하에 있어서도 은도금이 부식되지 않는 것을 발견하고, 본 발명을 완성시켰다.DISCLOSURE OF THE INVENTION The inventors of the present invention have made intensive investigations to solve the above problems. As a result, they have found that (A) an encapsulating material composition for LEDs having three kinds of structural units and having at least two alkenyl groups bonded to silicon atoms in one molecule (B) a linear organopolysiloxane having three kinds of structural units and having at least two hydrogen atoms bonded to silicon atoms in one molecule, and (C) a hydrosilylation reaction catalyst. When at least one of the organopolysiloxane (A) and the organopolysiloxane (B) is constituted of an organopolysiloxane having a biphenylyl group bonded to a silicon atom when constituting the composition, an LED Sealing material has excellent heat resistance transparency and adhesion to an LED substrate and found that the silver plating does not corrode even in a severe environment of 80 deg. C under a sulfur atmosphere, thereby completing the present invention.

즉, 본 발명은, 제1 관점으로서,That is, the present invention provides, as a first aspect,

(A)하기 식(1)로 표시되는 3종의 구조단위를 갖고, 규소원자와 결합한 알케닐기를 1분자 중에 적어도 2개 갖는 직쇄상의 오가노폴리실록산,(A) a linear organopolysiloxane having three kinds of structural units represented by the following formula (1) and having at least two alkenyl groups bonded to silicon atoms in one molecule,

(R1R2R3SiO1/2)a(R4R5SiO2/2)b(R6 2SiO2/2)c (1)(R 1 R 2 R 3 SiO 1/2 ) a (R 4 R 5 SiO 2/2 ) b (R 6 2 SiO 2/2 ) c (1)

(식 중, R1은 탄소원자수 2~12의 알케닐기를 나타내고, R2는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R3은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R4는 탄소원자수 6~20의 아릴기 또는 비페닐릴기를 나타내고, R5는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, 2개의 R6은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, a, b 및 c는, 각각, 0.01≤a≤0.5, 0.01≤b≤0.7, 0.1≤c≤0.9, 또한 a+b+c=1을 만족시키는 수이다.)(Wherein R 1 represents an alkenyl group having 2 to 12 carbon atoms, R 2 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and R 3 represents an aryl group having 6 to 20 carbon atoms group or a carbon atom represents a group of atoms from 1 to 12, R 4 represents an aryl group or a biphenylyl of carbon atoms from 6 to 20, R 5 is an alkyl group of carbon atoms from 6 to 20 aryl group or a carbon atom number of 1 to 12 of the represents, two R 6 represents an alkyl group of carbon atoms from 6 to 20 carbon atoms or aryl group of 1 to 12, a, b and c are, respectively, 0.01≤a≤0.5, 0.01≤b≤0.7, 0.1≤c Lt; = 0.9, and a + b + c = 1.)

(B)하기 식(2)로 표시되는 3종의 구조단위를 갖고, 규소원자와 결합한 수소원자를 1분자 중에 적어도 2개 갖는 직쇄상의 오가노폴리실록산,(B) a linear organopolysiloxane having three kinds of structural units represented by the following formula (2) and having at least two hydrogen atoms bonded to silicon atoms in one molecule,

(R7R8R9SiO1/2)d(R10R11SiO2/2)e(R12 2SiO2/2)f (2)(R 7 R 8 R 9 SiO 1/2 ) d (R 10 R 11 SiO 2/2 ) e (R 12 2 SiO 2/2 ) f (2)

(식 중, R7은 수소원자를 나타내고, R8은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R9는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R10은 탄소원자수 6~20의 아릴기 또는 비페닐릴기를 나타내고, R11은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, 2개의 R12는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, d, e 및 f는, 각각, 0.01≤d≤0.5, 0.01≤e≤0.7, 0.1≤f≤0.9, 또한 d+e+f=1을 만족시키는 수이다.)(Wherein R 7 represents a hydrogen atom, R 8 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, R 9 represents an aryl group having 6 to 20 carbon atoms, R 11 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms and R 12 represents an alkyl group having 1 to 12 carbon atoms; R 10 represents an aryl group or a biphenyl group having 6 to 20 carbon atoms; R 11 denotes an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms; D, e and f each represent an integer of 0.01? D? 0.5, 0.01? E? 0.7, 0.1? F? 0.9, and d + e + f = 1.)

And

(C)하이드로실릴화반응촉매(C) hydrosilylation reaction catalyst

를 포함하고, 상기 식(1) 중의 R4 및 상기 식(2) 중의 R10의 적어도 일방은 비페닐릴기를 나타내는, LED용 봉지재 조성물에 관한 것이다., And at least one of R 4 in the formula (1) and R 10 in the formula (2) represents a biphenylyl group.

한편, 본 발명에 있어서, 탄소원자수 6~20의 아릴기는, 비페닐릴기 및 터페닐릴기를 포함하지 않는 것으로 정의한다.In the present invention, an aryl group having 6 to 20 carbon atoms is defined as not including a biphenyl group and a terphenyl group.

제2 관점으로서, 상기 식(1) 중의 R4는 페닐기 또는 비페닐릴기를 나타내는, 제1 관점에 기재된 LED용 봉지재 조성물에 관한 것이다.As a second aspect, the sealing composition for LED according to the first aspect is characterized in that R 4 in the formula (1) represents a phenyl group or a biphenylyl group.

제3 관점으로서, 상기 식(2) 중의 R10은 페닐기 또는 비페닐릴기를 나타내는, 제1 관점 또는 제2 관점에 기재된 LED용 봉지재 조성물에 관한 것이다.As a third aspect, the encapsulating composition for LED described in the first or second aspect, wherein R 10 in the formula (2) represents a phenyl group or a biphenylyl group.

제4 관점으로서, 추가로 (D)접착부여제를 포함하는, 제1 관점 내지 제3 관점 중 어느 하나에 기재된 LED용 봉지재 조성물에 관한 것이다.As a fourth aspect, the present invention relates to an encapsulating material composition for LED according to any one of the first to third aspects, further comprising (D) an adhesion-imparting agent.

제5 관점으로서, 제1 관점 내지 제4 관점 중 어느 하나에 기재된 LED용 봉지재 조성물로부터 얻어지는 경화물에 관한 것이다.As a fifth aspect, the present invention relates to a cured product obtained from the sealing composition for LED according to any one of the first to fourth aspects.

제6 관점으로서, 제5 관점에 기재된 경화물에 의해 LED소자가 봉지된 LED장치에 관한 것이다.As a sixth aspect, the present invention relates to an LED device in which an LED element is sealed by the cured product described in the fifth aspect.

본 발명의 LED용 봉지재 조성물은, 내열투명성, 황화내성, 밀착성이 우수한 경화물을 형성한다는 특징이 있다. 또한, 본 발명인 LED용 봉지재 조성물로부터 얻어지는 경화물로 봉지된 LED소자는, 신뢰성이 우수한 특징이 있다.INDUSTRIAL APPLICABILITY The sealing composition for LED of the present invention is characterized in that it forms a cured product having excellent heat resistance transparency, sulfide resistance and adhesion. Further, the LED element encapsulated with the cured product obtained from the encapsulating material composition for LED of the present invention is characterized by high reliability.

본 발명의 LED용 봉지재 조성물에 대하여 상세히 설명한다.The sealing composition for LED of the present invention will be described in detail.

(A)성분의 직쇄상 오가노폴리실록산은, 하기 식(1)로 표시되는 3종의 구조단위를 갖고, 규소원자와 결합한 알케닐기를 1분자 중에 적어도 2개 갖는다.The straight-chain organopolysiloxane of component (A) has three kinds of structural units represented by the following formula (1) and has at least two alkenyl groups bonded to silicon atoms in one molecule.

(R1R2R3SiO1/2)a(R4R5SiO2/2)b(R6 2SiO2/2)c (1)(R 1 R 2 R 3 SiO 1/2 ) a (R 4 R 5 SiO 2/2 ) b (R 6 2 SiO 2/2 ) c (1)

식 중, R1은 탄소원자수 2~12의 알케닐기를 나타내고, 이 알케닐기로서, 비닐기, 부테닐기, 펜테닐기, 헥세닐기, 헵테닐기, 옥테닐기, 노네닐기, 데세닐기, 운데세닐기, 도데세닐기가 예시되고, 바람직하게는 비닐기이다. R2는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R2가 아릴기를 나타내는 경우, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시되고, 바람직하게는 페닐기이다. 또한, R2가 알킬기를 나타내는 경우, 이 알킬기로서, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기가 예시되고, 바람직하게는, 메틸기이다. R3은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R3이 아릴기를 나타내는 경우, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시되고, 바람직하게는, 페닐기이다. 또한, R3이 알킬기를 나타내는 경우, 이 알킬기로서, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기가 예시되고, 바람직하게는, 메틸기이다. R4는 탄소원자수 6~20의 아릴기 또는 비페닐릴기를 나타내고, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시된다. 환경 중의 부식성 가스에 의한 봉지재의 변색, 및 전극이나 기판에 도금된 은의 부식에 의한 휘도의 저하를 방지하는 관점에서, R4로서 비페닐릴기가 바람직하다. R5는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R5가 아릴기를 나타내는 경우, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시되고, 바람직하게는, 페닐기이다. 또한, R5가 알킬기를 나타내는 경우, 이 알킬기로서, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기가 예시되고, 바람직하게는, 메틸기이다. R6은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R6이 아릴기를 나타내는 경우, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시되고, 바람직하게는, 페닐기이다. 또한, R6이 알킬기를 나타내는 경우, 이 알킬기로서, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기가 예시되고, 바람직하게는, 메틸기이다.In the formula, R 1 represents an alkenyl group having 2 to 12 carbon atoms, and examples of the alkenyl group include vinyl, butenyl, pentenyl, hexenyl, heptenyl, octenyl, nonenyl, A dodecenyl group is exemplified, preferably a vinyl group. R 2 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and when R 2 represents an aryl group, examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, Phenanthryl group, pyrenyl group, and groups obtained by substituting the hydrogen atoms of these aryl groups with alkyl groups such as methyl group and ethyl group, alkoxy groups such as methoxy group and ethoxy group, or halogen atoms such as chlorine atom and bromine atom, Is a phenyl group. When R 2 represents an alkyl group, the alkyl group is exemplified by methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl and dodecyl , Preferably a methyl group. R 3 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms; and when R 3 represents an aryl group, examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, Phenanthryl group, pyrenyl group, and groups obtained by substituting the hydrogen atoms of these aryl groups with alkyl groups such as methyl group and ethyl group, alkoxy groups such as methoxy group and ethoxy group, or halogen atoms such as chlorine atom and bromine atom, Is a phenyl group. When R 3 represents an alkyl group, the alkyl group is exemplified by methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl and dodecyl , Preferably a methyl group. R 4 represents an aryl group or a biphenyl group having 6 to 20 carbon atoms, and examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, A hydrogen atom is substituted with an alkyl group such as a methyl group or an ethyl group, an alkoxy group such as a methoxy group or an ethoxy group, or a halogen atom such as a chlorine atom or a bromine atom. From the viewpoint of preventing discoloration of the sealing material due to corrosive gas in the environment and reduction in luminance due to corrosion of silver plated on the electrode or the substrate, a biphenyl group is preferable as R 4 . R 5 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and when R 5 represents an aryl group, examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, Phenanthryl group, pyrenyl group, and groups obtained by substituting the hydrogen atoms of these aryl groups with alkyl groups such as methyl group and ethyl group, alkoxy groups such as methoxy group and ethoxy group, or halogen atoms such as chlorine atom and bromine atom, Is a phenyl group. When R 5 represents an alkyl group, examples of the alkyl group include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl and dodecyl , Preferably a methyl group. R 6 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms; and when R 6 represents an aryl group, examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, Phenanthryl group, pyrenyl group, and groups obtained by substituting the hydrogen atoms of these aryl groups with alkyl groups such as methyl group and ethyl group, alkoxy groups such as methoxy group and ethoxy group, or halogen atoms such as chlorine atom and bromine atom, Is a phenyl group. When R 6 represents an alkyl group, the alkyl group is exemplified by methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl and dodecyl , Preferably a methyl group.

또한, 식 중, a, b 및 c는, 각각, 0.01≤a≤0.5, 0.01≤b≤0.7, 0.1≤c≤0.9, 또한 a+b+c=1을 만족시키는 수이며, 바람직하게는, 0.02≤a≤0.5, 0.1≤b≤0.6, 0.1≤c≤0.8, 또한 a+b+c=1을 만족시키는 수이며, 더욱 바람직하게는, 0.05≤a≤0.5, 0.2≤b≤0.6, 0.1≤c≤0.7, 또한, a+b+c=1을 만족시키는 수이다. 이는, a가 상기 범위의 하한값 미만이면, 경화물의 강도가 충분히 얻어지지 않고 경화물의 가스내성이 저하되기 때문이며, 한편, 상기 범위의 상한값보다 크면 경화물이 물러진다. a가 상기 범위이내이면, 경화물은 충분한 강도를 갖고, 경화물의 가스내성이 양호해진다. b가 상기 범위의 하한값 미만이면 경화물의 가스내성이 저하되고, 상기 범위의 상한값보다 크면 경화물이 하얗게 흐려진다. b가 상기 범위이내이면, 경화물의 가스내성이 양호해지며, 투명한 경화물이 얻어진다. c가 상기 범위의 하한값 미만이면 경화물의 내크랙성이 저하되고, 상기 범위의 상한값보다 크면 경화물의 가스내성이 저하된다. c가 상기 범위이내이면, 내크랙성이 있으며, 경화물의 가스내성이 높아진다.In the formula, a, b and c are numbers satisfying 0.01? A? 0.5, 0.01 b? 0.7, 0.1 c? 0.9, and a + b + c = B is a number satisfying 0.02? A? 0.5, 0.1? B? 0.6, 0.1? C? 0.8 and a + b + c = 1, more preferably 0.05? A? 0.5, 0.2 b? ? C? 0.7, and a + b + c = 1. This is because if the value of a is less than the lower limit of the above range, the strength of the cured product is not sufficiently obtained and the gas resistance of the cured product is lowered. If the value is larger than the upper limit of the above range, the cured product is decomposed. When a is within the above range, the cured product has sufficient strength and the gas resistance of the cured product becomes good. If b is less than the lower limit of the above range, the gas resistance of the cured product is lowered. If the value is larger than the upper limit of the above range, the cured product becomes whitish. When b is within the above range, the gas resistance of the cured product becomes good, and a transparent cured product is obtained. If c is less than the lower limit of the above range, the crack resistance of the cured product is deteriorated. If it is larger than the upper limit of the above range, the gas resistance of the cured product is lowered. When c is within the above range, there is crack resistance and the gas resistance of the cured product is high.

한편, (A)성분의 직쇄상 오가노폴리실록산은, 본 발명의 목적을 손상시키지 않는 범위에서, SiO4/2로 표시되는 실록산단위를 추가로 가질 수도 있다. 또한, 이 오가노폴리실록산에는, 본 발명의 목적을 손상시키지 않는 범위에서, 메톡시기, 에톡시기, 프로폭시기 등의 규소원자와 결합한 알콕시기, 혹은 규소원자결합와 결합한 수산기를 가질 수도 있다.On the other hand, the straight-chain organopolysiloxane of component (A) may further have a siloxane unit represented by SiO 4/2 within the range not impairing the object of the present invention. The organopolysiloxane may have an alkoxy group bonded to a silicon atom such as a methoxy group, an ethoxy group or a propoxy group, or a hydroxyl group bonded to a silicon atom bond, as long as the object of the present invention is not impaired.

(A)성분의 오가노폴리실록산을 합성하는 방법으로는, 예를 들어,As a method for synthesizing the organopolysiloxane of the component (A), for example,

일반식(I): R1R2R3SiX1 (I): R 1 R 2 R 3 SiX 1

로 표시되는 실란 화합물,A silane compound represented by the formula

일반식(II): R4R5Si(X2)2 (II): ???????? R 4 R 5 Si (X 2 ) 2 ?????

로 표시되는 실란 화합물, 및A silane compound represented by the formula

일반식(III): R6 2Si(X3)2 (III): ???????? R 6 2 Si (X 3 ) 2 ?????

로 표시되는 실란 화합물을, 산 또는 알칼리의 존재하, 가수분해·축합반응시키는 방법을 들 수 있다.Is subjected to a hydrolysis / condensation reaction in the presence of an acid or an alkali.

일반식(I): R1R2R3SiX1 (I): R 1 R 2 R 3 SiX 1

로 표시되는 실란 화합물은, 오가노폴리실록산에, 식: R1R2R3SiO1/2로 표시되는 실록산단위를 도입하기 위한 원료이다. 일반식(I) 중, R1은 탄소원자수 2~12의 알케닐기를 나타내고, R2는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R3은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타낸다. 또한, 식 중 X1은, 알콕시기, 아실옥시기, 수산기 또는 -OSiR1R2R3기를 나타낸다. X1이 알콕시기를 나타내는 경우, 이 알콕시기로서, 메톡시기, 에톡시기, 프로폭시기가 예시된다. 또한, X1이 아실옥시기를 나타내는 경우, 이 아실옥시기로서 아세톡시기가 예시된다.Is a raw material for introducing a siloxane unit represented by the formula: R 1 R 2 R 3 SiO 1/2 into an organopolysiloxane. In the general formula (I), R 1 represents an alkenyl group of carbon atoms 2 - 12, R 2 represents an alkyl group having carbon atoms 6 to 20 aryl group or a carbon atom number of 1 to 12 of, R 3 is a carbon atom number of 6 to An aryl group having 1 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms. In the formula, X 1 represents an alkoxy group, an acyloxy group, a hydroxyl group or an -OSiR 1 R 2 R 3 group. When X 1 represents an alkoxy group, examples of the alkoxy group include a methoxy group, an ethoxy group and a propoxy group. When X 1 represents an acyloxy group, an acetoxy group is exemplified as the acyloxy group.

이러한 실란 화합물로는, 디메틸비닐메톡시실란, 디메틸비닐에톡시실란, 메틸페닐비닐메톡시실란, 메틸페닐비닐에톡시실란 등의 알콕시실란, 디메틸비닐아세톡시실란, 메틸페닐비닐아세톡시실란 등의 아세톡시실란, 디메틸비닐하이드록시실란, 메틸페닐비닐하이드록시실란 등의 하이드록시실란, 1,3-디비닐-1,1,3,3-테트라메틸디실록산이 예시된다.Examples of such silane compounds include alkoxysilanes such as dimethylvinylmethoxysilane, dimethylvinylethoxysilane, methylphenylvinylmethoxysilane and methylphenylvinylethoxysilane, acetoxy silanes such as dimethylvinylacetoxysilane and methylphenylvinylacetoxysilane, , Dimethylvinylhydroxysilane, hydroxysilane such as methylphenylvinylhydroxysilane, and 1,3-divinyl-1,1,3,3-tetramethyldisiloxane.

일반식(II): R4R5Si(X2)2 (II): ???????? R 4 R 5 Si (X 2 ) 2 ?????

로 표시되는 실란 화합물은, 오가노폴리실록산에, 식: R4R5SiO2/2로 표시되는 실록산단위를 도입하기 위한 원료이다. 일반식(II) 중, R4는 탄소원자수 6~20의 아릴기 또는 비페닐릴기를 나타내고, R5는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타낸다. 또한, 식 중 X2는, 알콕시기, 아실옥시기, 또는 수산기를 나타낸다. X2가 알콕시기를 나타내는 경우, 이 알콕시기로는, 메톡시기, 에톡시기, 프로폭시기가 예시된다. 또한, X2가 아실옥시기를 나타내는 경우, 이 아실옥시기로서, 아세톡시기가 예시된다.Is a raw material for introducing a siloxane unit represented by the formula: R 4 R 5 SiO 2/2 into an organopolysiloxane. In the general formula (II), R 4 represents an aryl group or a biphenyl group having 6 to 20 carbon atoms, and R 5 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms. In the formula, X 2 represents an alkoxy group, an acyloxy group or a hydroxyl group. When X 2 represents an alkoxy group, examples of the alkoxy group include methoxy group, ethoxy group and propoxy group. When X 2 represents an acyloxy group, examples of the acyloxy group include an acetoxy group.

이러한 실란 화합물로는, 메틸페닐디메톡시실란, 메틸페닐디에톡시실란, 에틸페닐디메톡시실란, 에틸페닐디에톡시실란, 디페닐디메톡시실란, 디페닐디에톡시실란, 메틸비페닐릴디메톡시실란, 메틸비페닐릴디에톡시실란, 페닐비페닐릴디메톡시실란, 페닐비페닐릴디에톡시실란 등의 알콕시실란, 메틸페닐디아세톡시실란, 에틸페닐디아세톡시실란, 디페닐디아세톡시실란, 메틸비페닐릴디아세톡시실란, 페닐비페닐릴디아세톡시실란 등의 아세톡시실란, 메틸페닐디하이드록시실란, 에틸페닐디하이드록시실란, 디페닐디하이드록시실란, 메틸비페닐릴디하이드록시실란, 페닐비페닐릴디하이드록시실란 등의 하이드록시실란이 예시된다.Examples of the silane compound include methylphenyldimethoxysilane, methylphenyldiethoxysilane, ethylphenyldimethoxysilane, ethylphenyldiethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, methylbiphenyldimethoxysilane, methylbis Alkenyloxysilanes such as methylphenyldiacetoxysilane, ethylphenyldiacetoxysilane, diphenyldiacetoxysilane, methylbiphenylsilane, methylphenyldiacetoxysilane, phenylphenyldiacetoxysilane, phenylphenyldiethoxysilane, phenylphenyldimethoxysilane, phenylphenyldiethoxysilane, Diacetoxysilane, phenylphenyldiacetoxysilane, and other acetoxysilanes, such as methylphenyl dihydroxysilane, ethylphenyl dihydroxy silane, diphenyl dihydroxy silane, methyl biphenyllydihydroxy silane, phenyl biphenyl And hydroxysilanes such as lidylhydroxysilane.

일반식(III): R6 2Si(X3)2 (III): ???????? R 6 2 Si (X 3 ) 2 ?????

로 표시되는 실란 화합물은, 오가노폴리실록산에, 식: R6 2SiO2/2로 표시되는 실록산단위를 도입하기 위한 원료이다. 일반식(III) 중, R6은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, X3은, 알콕시기, 아실옥시기, 할로겐원자, 또는 수산기를 나타낸다. X3이 알콕시기를 나타내는 경우, 이 알콕시기로서, 메톡시기, 에톡시기, 프로폭시기가 예시된다. 또한, X3이 아실옥시기를 나타내는 경우, 이 아실옥시기로서, 아세톡시기가 예시된다.Is a raw material for introducing a siloxane unit represented by the formula: R 6 2 SiO 2/2 into an organopolysiloxane. In the general formula (III), R 6 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and X 3 represents an alkoxy group, an acyloxy group, a halogen atom or a hydroxyl group. When X 3 represents an alkoxy group, examples of the alkoxy group include a methoxy group, an ethoxy group and a propoxy group. When X 3 represents an acyloxy group, examples of the acyloxy group include an acetoxy group.

이러한 실란 화합물로는, 디메틸디메톡시실란, 디메틸디에톡시실란, 디페닐디메톡시실란, 디페닐디에톡시실란 등의 알콕시실란, 디메틸디아세톡시실란, 디페닐디아세톡시실란 등의 아세톡시실란, 디메틸디하이드록시실란, 디페닐디하이드록시실란 등의 하이드록시실란이 예시된다.Examples of the silane compound include alkoxysilanes such as dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldimethoxysilane and diphenyldiethoxysilane, acetoxysilane such as dimethyldiacetoxysilane and diphenyldiacetoxysilane, Dimethyldihydroxysilane, diphenyldihydroxysilane, and the like.

(A)성분의 직쇄상 오가노폴리실록산은, 실란 화합물(I), 실란 화합물(II), 실란 화합물(III), 추가로 필요에 따라, 기타 실란 화합물, 환상 실리콘 화합물, 혹은 실란올리고머를, 산 혹은 알칼리의 존재하, 가수분해·축합반응시켜 얻어진 것을 특징으로 한다.The linear organopolysiloxane of component (A) can be obtained by reacting a silane compound (I), a silane compound (II), a silane compound (III) and, if necessary, other silane compounds, cyclic silicone compounds, Or a hydrolysis / condensation reaction in the presence of an alkali.

사용할 수 있는 산으로는, 염산, 아세트산, 포름산, 질산, 옥살산, 황산, 인산, 폴리인산, 다가카르본산, 트리플루오로메탄설폰산, 이온교환수지가 예시된다. 또한, 사용할 수 있는 알칼리로는, 수산화칼륨, 수산화나트륨 등의 무기알칼리, 트리에틸아민, 디에틸아민, 모노에탄올아민, 디에탄올아민, 트리에탄올아민, 암모니아수, 테트라메틸암모늄하이드로옥사이드, 테트라부틸암모늄하이드로옥사이드, 아미노기를 갖는 알콕실란, 아미노프로필트리메톡시실란 등의 유기염기 화합물이 예시된다.Examples of the acid usable herein include hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, sulfuric acid, phosphoric acid, polyphosphoric acid, polycarboxylic acid, trifluoromethanesulfonic acid and ion exchange resins. Examples of the alkali that can be used include inorganic alkalis such as potassium hydroxide and sodium hydroxide, organic bases such as triethylamine, diethylamine, monoethanolamine, diethanolamine, triethanolamine, aqueous ammonia, tetramethylammonium hydroxide, tetrabutylammonium hydroxide Oxides, alkoxysilanes having an amino group, aminopropyltrimethoxysilane, and the like.

또한, 상기의 조제방법에 있어서, 유기용제를 사용할 수 있다. 사용할 수 있는 유기용제로는, 에테르류, 케톤류, 알코올류, 아세테이트류, 방향족 혹은 지방족 탄화수소, γ-부티로락톤, 및 이들 2종 이상의 혼합물이 예시된다. 바람직한 유기용제로는, 디에틸에테르, 디이소프로필에테르, 테트라하이드로푸란, 1,4-디옥산, 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 메탄올, 에탄올, 이소프로판올, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로필렌글리콜모노부틸에테르, 프로필렌글리콜모노-t-부틸에테르, γ-부티로락톤, 펜탄, 헥산, 헵탄, 톨루엔, 자일렌이 예시된다.In the above-mentioned preparation method, an organic solvent may be used. Examples of the organic solvent that can be used include ethers, ketones, alcohols, acetates, aromatic or aliphatic hydrocarbons,? -Butyrolactone, and mixtures of two or more thereof. Preferred organic solvents include diethyl ether, diisopropyl ether, tetrahydrofuran, 1,4-dioxane, acetone, methyl ethyl ketone, methyl isobutyl ketone, methanol, ethanol, isopropanol, propylene glycol monomethyl ether, propylene Propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol mono-t-butyl ether,? -Butyrolactone, pentane, hexane, heptane, toluene, xylene, .

상기의 조제방법에서는, 상기 각 성분의 가수분해·축합반응을 촉진하기 위해, 물, 또는 물과 알코올류의 혼합액을 첨가하는 것이 바람직하다. 이 알코올류로는, 메탄올, 에탄올, 이소프로판올이 바람직하다. 이 반응은, 가열에 의해 촉진되고, 유기용제를 사용하는 경우에는, 그 환류온도에서 반응을 행하는 것이 바람직하다.In the preparation method, it is preferable to add water or a mixture of water and alcohols to accelerate the hydrolysis / condensation reaction of the respective components. As the alcohols, methanol, ethanol and isopropanol are preferable. This reaction is promoted by heating, and when an organic solvent is used, the reaction is preferably carried out at the reflux temperature.

(B)성분의 직쇄상 오가노폴리실록산은, 하기 식(2)로 표시되는 3종의 구조단위를 갖고, 규소원자와 결합한 수소원자를 1분자 중에 적어도 2개 갖는다.The straight-chain organopolysiloxane of the component (B) has three kinds of structural units represented by the following formula (2) and has at least two hydrogen atoms bonded to silicon atoms in one molecule.

(R7R8R9SiO1/2)d(R10R11SiO2/2)e(R12 2SiO2/2)f (2)(R 7 R 8 R 9 SiO 1/2 ) d (R 10 R 11 SiO 2/2 ) e (R 12 2 SiO 2/2 ) f (2)

식 중, R7은 수소원자를 나타낸다. R8은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R8이 아릴기를 나타내는 경우, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시되고, 바람직하게는, 페닐기이다. 또한, R8이 알킬기를 나타내는 경우, 이 알킬기로서, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기가 예시되고, 바람직하게는, 메틸기이다. R9는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R9가 아릴기를 나타내는 경우, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시되고, 바람직하게는, 페닐기이다. 또한, R9가 알킬기를 나타내는 경우, 이 알킬기로서, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기가 예시되고, 바람직하게는, 메틸기이다. R10은 탄소원자수 6~20의 아릴기 또는 비페닐릴기를 나타내고, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시된다. 환경 중의 부식성 가스에 의한 봉지재의 변색, 및 전극이나 기판에 도금된 은의 부식에 의한 휘도의 저하를 방지하는 관점에서, R10으로서 비페닐릴기가 바람직하다. R11은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R11이 아릴기를 나타내는 경우, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시되고, 바람직하게는, 페닐기이다. 또한, R11이 알킬기를 나타내는 경우, 이 알킬기로서, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기가 예시되고, 바람직하게는, 메틸기이다. R12는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R12가 아릴기를 나타내는 경우, 이 아릴기로서, 페닐기, 톨릴기, 자일릴기, 나프틸기, 안트라세닐기, 페난트릴기, 피레닐기, 및 이들 아릴기의 수소원자를 메틸기, 에틸기 등의 알킬기, 메톡시기, 에톡시기 등의 알콕시기, 또는 염소원자, 브롬원자 등의 할로겐원자로 치환한 기가 예시되고, 바람직하게는, 페닐기이다. 또한, R12가 알킬기를 나타내는 경우, 이 알킬기로서, 메틸기, 에틸기, 프로필기, 부틸기, 펜틸기, 헥실기, 헵틸기, 옥틸기, 노닐기, 데실기, 운데실기, 도데실기가 예시되고, 바람직하게는, 메틸기이다.In the formula, R 7 represents a hydrogen atom. R 8 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms; when R 8 represents an aryl group, the aryl group is preferably a phenyl group, a tolyl group, a xylyl group, a naphthyl group, Phenanthryl group, pyrenyl group, and groups obtained by substituting the hydrogen atoms of these aryl groups with alkyl groups such as methyl group and ethyl group, alkoxy groups such as methoxy group and ethoxy group, or halogen atoms such as chlorine atom and bromine atom, Is a phenyl group. When R 8 represents an alkyl group, the alkyl group is exemplified by methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl and dodecyl , Preferably a methyl group. R 9 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms; when R 9 represents an aryl group, the aryl group may be a phenyl group, a tolyl group, a xylyl group, a naphthyl group, Phenanthryl group, pyrenyl group, and groups obtained by substituting the hydrogen atoms of these aryl groups with alkyl groups such as methyl group and ethyl group, alkoxy groups such as methoxy group and ethoxy group, or halogen atoms such as chlorine atom and bromine atom, Is a phenyl group. When R 9 represents an alkyl group, the alkyl group is exemplified by methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl and dodecyl , Preferably a methyl group. R 10 represents an aryl group or a biphenyl group having 6 to 20 carbon atoms, and examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, A hydrogen atom is substituted with an alkyl group such as a methyl group or an ethyl group, an alkoxy group such as a methoxy group or an ethoxy group, or a halogen atom such as a chlorine atom or a bromine atom. From the viewpoint of preventing discoloration of the encapsulating material due to corrosive gas in the environment and reduction in luminance due to corrosion of the silver plated on the electrode or the substrate, a biphenyl group is preferable as R 10 . R 11 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and when R 11 represents an aryl group, examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, Phenanthryl group, pyrenyl group, and groups obtained by substituting the hydrogen atoms of these aryl groups with alkyl groups such as methyl group and ethyl group, alkoxy groups such as methoxy group and ethoxy group, or halogen atoms such as chlorine atom and bromine atom, Is a phenyl group. When R 11 represents an alkyl group, the alkyl group is exemplified by methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl and dodecyl , Preferably a methyl group. R 12 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms; when R 12 represents an aryl group, examples of the aryl group include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, Phenanthryl group, pyrenyl group, and groups obtained by substituting the hydrogen atoms of these aryl groups with alkyl groups such as methyl group and ethyl group, alkoxy groups such as methoxy group and ethoxy group, or halogen atoms such as chlorine atom and bromine atom, Is a phenyl group. When R 12 represents an alkyl group, the alkyl group is exemplified by methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl and dodecyl , Preferably a methyl group.

또한, 식 중, d, e 및 f는, 각각, 0.01≤d≤0.5, 0.01≤e≤0.7, 0.1≤f≤0.9, 또한 d+e+f=1을 만족시키는 수이며, 바람직하게는, 0.02≤d≤0.5, 0.1≤e≤0.6, 0.1≤f≤0.8, 또한 d+e+f=1을 만족시키는 수이며, 더욱 바람직하게는, 0.05≤d≤0.5, 0.2≤e≤0.6, 0.1≤f≤0.7, 또한, d+e+f=1을 만족시키는 수이다. 이는, d가 상기 범위의 하한값 미만이면, 경화물의 강도가 충분히 얻어지지 않고 경화물의 가스내성이 저하되기 때문이며, 한편, 상기 범위의 상한값보다 크면 경화물이 물러진다. d가 상기 범위이내이면, 경화물은 충분한 강도를 갖고, 경화물의 가스내성이 양호해진다. e가 상기 범위의 하한값 미만이면 경화물의 가스내성이 저하되고, 상기 범위의 상한값보다 크면 경화물이 하얗게 흐려진다. e가 상기 범위이내이면, 경화물의 가스내성이 양호해지고, 투명한 경화물이 얻어진다. f가 상기 범위의 하한값 미만이면 경화물의 내크랙성이 저하되고, 상기 범위의 상한값보다 크면 경화물의 가스내성이 저하된다. f가 상기 범위이내이면, 내크랙성이 있으며, 경화물의 가스내성이 높아진다.D, e and f are numbers satisfying 0.01? D? 0.5, 0.01? E? 0.7, 0.1? F? 0.9 and d + e + f = 1, D is a number satisfying 0.02? D? 0.5, 0.1? E? 0.6, 0.1? F? 0.8 and d + e + f = 1, more preferably 0.05? D? 0.5, 0.2? E? ? F? 0.7, and d + e + f = 1. This is because if d is less than the lower limit of the above range, the strength of the cured product is not sufficiently obtained and the gas resistance of the cured product is lowered. On the other hand, when the upper limit of the above range is exceeded, the cured product is withdrawn. When d is within the above range, the cured product has a sufficient strength and the gas resistance of the cured product becomes good. If e is less than the lower limit of the above range, the gas resistance of the cured product is lowered, and if it exceeds the upper limit of the above range, the cured product becomes whitish. When e is within the above range, the gas resistance of the cured product becomes good, and a transparent cured product is obtained. If f is less than the lower limit of the above range, crack resistance of the cured product is deteriorated. If f is larger than the upper limit of the above range, gas resistance of the cured product is lowered. When f is within the above range, there is crack resistance and the gas resistance of the cured product is high.

한편, (B)성분의 오가노폴리실록산은, 본 발명의 목적을 손상시키지 않는 범위에서, SiO4/2로 표시되는 실록산단위를 가질 수도 있다. 또한, 이 오가노폴리실록산에는, 본 발명의 목적을 손상시키지 않는 범위에서, 메톡시기, 에톡시기, 프로폭시기 등의 규소원자결합 알콕시기, 혹은 규소원자와 결합한 수산기를 가질 수도 있다.On the other hand, the organopolysiloxane of the component (B) may have a siloxane unit represented by SiO 4/2 within the range not impairing the object of the present invention. The organopolysiloxane may also have a silicon atom-bonded alkoxy group such as a methoxy group, an ethoxy group or a propoxy group, or a hydroxyl group bonded to a silicon atom, so long as the object of the present invention is not impaired.

(B)성분의 오가노폴리실록산을 합성하는 방법으로는, 예를 들어,As a method for synthesizing an organopolysiloxane of component (B), for example,

일반식(IV): R7R8R9SiX1 (IV): ???????? R 7 R 8 R 9 SiX 1 ?????

로 표시되는 실란 화합물,A silane compound represented by the formula

일반식(V): R10R11Si(X2)2 (V): ???????? R 10 R 11 Si (X 2 ) 2 ?????

로 표시되는 실란 화합물, 및A silane compound represented by the formula

일반식(VI): R12 2Si(X2)2 General formula (VI): R 12 2 Si (X 2) 2

로 표시되는 실란 화합물을, 산 혹은 알칼리의 존재하, 가수분해·축합반응시키는 방법을 들 수 있다.Is subjected to a hydrolysis / condensation reaction in the presence of an acid or an alkali.

일반식(IV): R7R8R9SiX1 (IV): ???????? R 7 R 8 R 9 SiX 1 ?????

로 표시되는 실란 화합물은, 오가노폴리실록산에, 식: R7R8R9SiO1/2로 표시되는 실록산단위를 도입하기 위한 원료이다. 일반식(IV) 중, R7은 수소원자를 나타내고, R8은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R9는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, X1은 알콕시기, 아실옥시기, 수산기 또는 -OSiR7R8R9기를 나타낸다. X1이 알콕시기를 나타내는 경우, 이 알콕시기로는, 메톡시기, 에톡시기, 프로폭시기가 예시된다. 또한, X1이 아실옥시기를 나타내는 경우, 이 아실옥시기로는, 아세톡시기가 예시된다.Is a raw material for introducing a siloxane unit represented by the formula: R 7 R 8 R 9 SiO 1/2 into an organopolysiloxane. In the general formula (IV), R 7 is a hydrogen atom, R 8 represents an alkyl group of carbon atoms from 6 to 20 aryl group or a carbon atom number of 1 to 12 in, R 9 is an aryl group, or the carbon source of carbon atoms from 6 to 20 And X 1 represents an alkoxy group, an acyloxy group, a hydroxyl group or an -OSiR 7 R 8 R 9 group. When X 1 represents an alkoxy group, examples of the alkoxy group include a methoxy group, an ethoxy group and a propoxy group. When X 1 represents an acyloxy group, examples of the acyloxy group include an acetoxy group.

이러한 실란 화합물로는, 디메틸메톡시실란, 디메틸에톡시실란, 메틸페닐메톡시실란, 메틸페닐에톡시실란 등의 알콕시실란, 디메틸아세톡시실란, 메틸페닐아세톡시실란 등의 아세톡시실란, 디메틸하이드록시실란, 메틸페닐하이드록시실란 등의 하이드록시실란, 1,1,3,3-테트라메틸디실록산이 예시된다.Examples of the silane compound include alkoxysilanes such as dimethylmethoxysilane, dimethylethoxysilane, methylphenylmethoxysilane and methylphenylethoxysilane, acetoxysilane such as dimethylethoxysilane and methylphenylethoxysilane, dimethylhydroxysilane, Methylphenylhydroxysilane and the like, and 1,1,3,3-tetramethyldisiloxane.

일반식(V): R10R11Si(X2)2 (V): ???????? R 10 R 11 Si (X 2 ) 2 ?????

로 표시되는 실란 화합물은, 오가노폴리실록산에, 식: R10R11SiO2/2로 표시되는 실록산단위를 도입하기 위한 원료이다. 일반식(V) 중, R10은 탄소원자수 6~20의 아릴기 또는 비페닐릴기를 나타내고, R11은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, X2는 알콕시기, 아실옥시기, 또는 수산기를 나타낸다. X2가 알콕시기를 나타내는 경우, 이 알콕시기로서, 메톡시기, 에톡시기, 프로폭시기가 예시된다. 또한, X2가 아실옥시기를 나타내는 경우, 이 아실옥시기로서, 아세톡시기가 예시된다.Is a raw material for introducing a siloxane unit represented by the formula: R 10 R 11 SiO 2/2 into an organopolysiloxane. R 11 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and X 2 represents an alkyl group having 1 to 12 carbon atoms. In the general formula (V), R 10 represents an aryl group or a biphenyl group having 6 to 20 carbon atoms, An alkoxy group, an acyloxy group, or a hydroxyl group. When X 2 represents an alkoxy group, examples of the alkoxy group include a methoxy group, an ethoxy group and a propoxy group. When X 2 represents an acyloxy group, examples of the acyloxy group include an acetoxy group.

이러한 실란 화합물로는, 메틸페닐디메톡시실란, 메틸페닐디에톡시실란, 에틸페닐디메톡시실란, 에틸페닐디에톡시실란, 디페닐디메톡시실란, 디페닐디에톡시실란, 메틸비페닐릴디메톡시실란, 메틸비페닐릴디에톡시실란, 페닐비페닐릴디메톡시실란, 페닐비페닐릴디에톡시실란 등의 알콕시실란, 메틸페닐디아세톡시실란, 에틸페닐디아세톡시실란, 디페닐디아세톡시실란, 메틸비페닐릴디아세톡시실란, 페닐비페닐릴디아세톡시실란 등의 아세톡시실란, 메틸페닐디하이드록시실란, 에틸페닐디하이드록시실란, 디페닐디하이드록시실란, 메틸비페닐릴디하이드록시실란, 페닐비페닐릴디하이드록시실란 등의 하이드록시실란이 예시된다.Examples of the silane compound include methylphenyldimethoxysilane, methylphenyldiethoxysilane, ethylphenyldimethoxysilane, ethylphenyldiethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, methylbiphenyldimethoxysilane, methylbis Alkenyloxysilanes such as methylphenyldiacetoxysilane, ethylphenyldiacetoxysilane, diphenyldiacetoxysilane, methylbiphenylsilane, methylphenyldiacetoxysilane, phenylphenyldiacetoxysilane, phenylphenyldiethoxysilane, phenylphenyldimethoxysilane, phenylphenyldiethoxysilane, Diacetoxysilane, phenylphenyldiacetoxysilane, and other acetoxysilanes, such as methylphenyl dihydroxysilane, ethylphenyl dihydroxy silane, diphenyl dihydroxy silane, methyl biphenyllydihydroxy silane, phenyl biphenyl And hydroxysilanes such as lidylhydroxysilane.

일반식(VI): R12 2Si(X2)2 General formula (VI): R 12 2 Si (X 2) 2

로 표시되는 실란 화합물은, 오가노폴리실록산에, 식: R12 2SiO2/2로 표시되는 실록산단위를 도입하기 위한 원료이다. 일반식(VI) 중, R12는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, X2는 알콕시기, 아실옥시기, 또는 수산기를 나타낸다. X2가 알콕시기를 나타내는 경우, 이 알콕시기로서, 메톡시기, 에톡시기, 프로폭시기가 예시된다. 또한, X2가 아실옥시기를 나타내는 경우, 이 아실옥시기로서, 아세톡시기가 예시된다.Silane compounds represented by is, the organopolysiloxane, the formula: is a raw material for introducing a siloxane unit represented by R 12 2 SiO 2/2. In the formula (VI), R 12 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and X 2 represents an alkoxy group, an acyloxy group or a hydroxyl group. When X 2 represents an alkoxy group, examples of the alkoxy group include a methoxy group, an ethoxy group and a propoxy group. When X 2 represents an acyloxy group, examples of the acyloxy group include an acetoxy group.

이러한 실란 화합물로는, 디메틸디메톡시실란, 디메틸디에톡시실란, 디페닐디메톡시실란, 디페닐디에톡시실란 등의 알콕시실란, 디메틸디아세톡시실란, 디페닐디아세톡시실란 등의 아세톡시실란, 디메틸디하이드록시실란, 디페닐디하이드록시실란 등의 하이드록시실란이 예시된다.Examples of the silane compound include alkoxysilanes such as dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldimethoxysilane and diphenyldiethoxysilane, acetoxysilane such as dimethyldiacetoxysilane and diphenyldiacetoxysilane, Dimethyldihydroxysilane, diphenyldihydroxysilane, and the like.

(B)성분의 오가노폴리실록산은, 실란 화합물(IV), 실란 화합물(V), 실란 화합물(VI), 추가로 필요에 따라, 기타 실란 화합물, 환상 실리콘 화합물, 혹은 실란올리고머를, 산의 존재하, 가수분해·축합반응시켜 얻어진 것을 특징으로 한다.The organopolysiloxane of the component (B) can be obtained by reacting the silane compound (IV), the silane compound (V), the silane compound (VI) and, if necessary, further silane compounds, cyclic silicone compounds or silane oligomers, And a hydrolysis / condensation reaction.

사용할 수 있는 산으로는, 염산, 아세트산, 포름산, 질산, 옥살산, 황산, 인산, 폴리인산, 다가카르본산, 트리플루오로메탄설폰산, 이온교환수지가 예시된다.Examples of the acid usable herein include hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, sulfuric acid, phosphoric acid, polyphosphoric acid, polycarboxylic acid, trifluoromethanesulfonic acid and ion exchange resins.

상기 (A)성분의 직쇄상 오가노폴리실록산의 합성시에 사용하는 일반식(II)로 표시되는 실란 화합물의 R4, 및 상기 (B)성분의 직쇄상 오가노폴리실록산의 합성시에 사용하는 일반식(V)로 표시되는 실란 화합물의 R10 중, 적어도 일방은 비페닐릴기를 나타낸다.(R 4 ) of the silane compound represented by the general formula (II) used in the synthesis of the straight-chain organopolysiloxane of the component (A) and the general At least one of R 10 in the silane compound represented by the formula (V) represents a biphenyl group.

또한, 상기의 조제방법에 있어서, 유기용제를 사용할 수 있다. 사용할 수 있는 유기용제로는, 에테르류, 케톤류, 알코올류, 아세테이트류, 방향족 탄화수소, 지방족 탄화수소, γ-부티로락톤, 및 이들 2종 이상의 혼합물이 예시된다. 바람직한 유기용제로는, 디에틸에테르, 디이소프로필에테르, 테트라하이드로푸란, 1,4-디옥산, 아세톤, 메틸에틸케톤, 메틸이소부틸케톤, 메탄올, 에탄올, 이소프로판올, 프로필렌글리콜모노메틸에테르, 프로필렌글리콜모노메틸에테르아세테이트, 프로필렌글리콜모노에틸에테르, 프로필렌글리콜모노프로필에테르, 프로필렌글리콜모노부틸에테르, 프로필렌글리콜모노-t-부틸에테르, γ-부티로락톤, 펜탄, 헥산, 헵탄, 톨루엔, 자일렌이 예시된다.In the above-mentioned preparation method, an organic solvent may be used. Examples of the organic solvent that can be used include ethers, ketones, alcohols, acetates, aromatic hydrocarbons, aliphatic hydrocarbons,? -Butyrolactone, and mixtures of two or more thereof. Preferred organic solvents include diethyl ether, diisopropyl ether, tetrahydrofuran, 1,4-dioxane, acetone, methyl ethyl ketone, methyl isobutyl ketone, methanol, ethanol, isopropanol, propylene glycol monomethyl ether, propylene Propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol mono-t-butyl ether,? -Butyrolactone, pentane, hexane, heptane, toluene, xylene, .

상기의 조제방법에서는, 상기 각 성분의 가수분해·축합반응을 촉진하기 위해, 물, 또는 물과 알코올류의 혼합액을 첨가하는 것이 바람직하다. 이 알코올류로는, 메탄올, 에탄올, 이소프로판올이 바람직하다. 이 반응은, 가열에 의해 촉진되고, 유기용제를 사용하는 경우에는, 그 환류온도에서 반응을 행하는 것이 바람직하다.In the preparation method, it is preferable to add water or a mixture of water and alcohols to accelerate the hydrolysis / condensation reaction of the respective components. As the alcohols, methanol, ethanol and isopropanol are preferable. This reaction is promoted by heating, and when an organic solvent is used, the reaction is preferably carried out at the reflux temperature.

본 조성물에 있어서, (B)성분의 함유량은, (A)성분 중 알케닐기 1몰에 대하여, 본 성분 중의 규소원자결합 수소원자가 0.1~5몰의 범위내가 되는 양이며, 바람직하게는, 0.5~2몰의 범위내가 되는 양이다. 이는, (B)성분의 함유량이 상기 범위의 하한값 미만이면, 조성물이 충분히 경화되지 않기 때문이며, 상기 범위보다 많으면 경화물의 내열투명성에 악영향을 부여하는, 즉, 경화물이 상온상태에 있어서 서서히 변색하게 되고, LED용 봉지재로서 사용할 수 없게 된다. 상기 범위내이면, 조성물이 충분히 경화하고, 충분한 황화내성을 발현해서, 본 발명의 조성물을 이용하여 제작한 LED장치의 신뢰성이 향상된다.In the present composition, the content of the component (B) is such that the amount of the silicon atom-bonded hydrogen atoms in the component is in the range of 0.1 to 5 moles per mole of the alkenyl group in the component (A) 2 moles. This is because if the content of the component (B) is less than the lower limit of the above range, the composition is not sufficiently cured. If the content is larger than the above range, the cured product may adversely affect the heat resistance and transparency of the cured product, And can not be used as an encapsulant for LED. Within this range, the composition sufficiently cures and exhibits sufficient sulfide resistance, so that the reliability of the LED device manufactured using the composition of the present invention is improved.

(C)성분은, 본 조성물의 경화를 촉진하기 위한 하이드로실릴화 반응촉매이며, 백금계 촉매, 로듐계 촉매, 파라듐계 촉매가 예시된다. 특히, 본 조성물의 경화를 현저히 촉진할 수 있는 점에서, (C)성분은 백금계 촉매인 것이 바람직하다. 이 백금계 촉매로는, 백금미분말, 염화백금산, 염화백금산의 알코올용액, 백금-알케닐실록산착체, 백금-올레핀착체, 백금-카르보닐착체가 예시되고, 바람직하게는, 백금-알케닐실록산착체이다.The component (C) is a hydrosilylation catalyst for promoting curing of the composition, and examples thereof include platinum-based catalysts, rhodium-based catalysts, and palladium-based catalysts. Particularly, the component (C) is preferably a platinum-based catalyst in that the curing of the composition can be markedly promoted. Examples of the platinum-based catalyst include platinum fine powder, chloroplatinic acid, alcoholic solution of chloroplatinic acid, platinum-alkenylsiloxane complex, platinum-olefin complex, and platinum-carbonyl complex, and preferably platinum-alkenylsiloxane complex to be.

또한, 본 조성물에 있어서, (C)성분의 함유량은, 본 조성물의 경화를 촉진하기 위해 유효한 양이다. 구체적으로는, (C)성분의 함유량은, 본 조성물의 경화반응을 충분히 촉진할 수 있는 점에서, (A)성분과 (B)성분의 합계 100질량부에 대하여, (C)성분 중의 촉매금속이 0.000001~0.05질량부의 범위내가 되는 양인 것이 바람직하고, 0.000001~0.03질량부의 범위내가 되는 양인 것이 더욱 바람직하고, 특히 0.000001~0.01질량부의 범위내가 되는 양인 것이 바람직하다.Further, in the present composition, the content of the component (C) is an amount effective to promote curing of the composition. Specifically, the content of the component (C) is preferably such that the amount of the catalyst metal (C) in the component (C) relative to the total amount of 100 parts by mass of the components (A) Is preferably in the range of 0.000001 to 0.05 part by mass, more preferably in the range of 0.000001 to 0.03 part by mass, and particularly preferably in the range of 0.000001 to 0.01 part by mass.

본 발명에 있어서, (A)성분의 오가노폴리실록산과, 상기 (B)성분의 오가노폴리실록산의 양방, 또는 일방에 비페닐릴기를 갖는 오가노폴리실록산이 포함되는 것이 바람직하다. 비페닐릴기를 갖는 오가노폴리실록산이 포함되면, 본 조성물의 경화물의 황화내성이 현저히 향상된다.In the present invention, it is preferable that an organopolysiloxane having a biphenylyl group in either or both of the organopolysiloxane of the component (A) and the organopolysiloxane of the component (B) is contained. When an organopolysiloxane having a biphenylyl group is included, the sulfide resistance of the cured product of the present composition is remarkably improved.

본 발명에 있어서, 경화도중에 접촉되어 있는 기재에 대한 경화물의 접착성을 향상시키기 위해, (D)접착부여제를 함유할 수도 있다. 이 (D)성분으로는, 규소원자와 결합한 알콕시기를 한 분자 중에 적어도 1개 갖는 유기규소 화합물이 바람직하다. 이 알콕시기로는, 메톡시기, 에톡시기, 프로폭시기, 부톡시기, 메톡시에톡시기가 예시되고, 특히 기재와의 밀착성이 우수한 점에서 메톡시기가 바람직하다. 또한, 이 유기규소 화합물의 규소원자와 결합하는 알콕시기 이외의 기로는, 알킬기, 알케닐기, 아릴기, 아랄킬기, 할로겐화알킬기 등의 치환 혹은 비치환된 일가탄화수소기, 3-글리시독시프로필기, 4-글리시독시부틸기 등의 글리시독시알킬기, 2-(3,4-에폭시시클로헥실)에틸기, 3-(3,4-에폭시시클로헥실)프로필기 등의 에폭시시클로헥실알킬기, 4-옥시라닐부틸기, 8-옥시라닐옥틸기 등의 옥시라닐알킬기 등의 에폭시기함유 일가유기기, 3-메타크릴옥시프로필기 등의 아크릴기함유 일가유기기, 수소원자가 예시된다. 이 유기규소 화합물은 규소원자와 결합한 알케닐기 또는 규소원자와 결합한 수소원자를 갖는 것이 바람직하다. 또한, 각종의 기재에 대하여 양호한 접착성을 부여할 수 있는 점에서, 이 유기규소 화합물은 한 분자 중에 적어도 1개의 에폭시기함유 일가유기기를 갖는 것인 것이 바람직하다. 이러한 유기규소 화합물로는, 오가노실란 화합물, 오가노실록산올리고머, 알킬실리케이트가 예시된다. 이 오가노실록산올리고머 혹은 알킬실리케이트의 분자구조로는, 직쇄상, 일부분지를 갖는 직쇄상, 분지쇄상, 환상, 망상이 예시되고, 특히, 직쇄상, 분지쇄상, 망상인 것이 바람직하다. 이러한 유기규소 화합물로는, 3-글리시독시프로필트리메톡시실란, 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란, 3-메타크릴옥시프로필트리메톡시실란 등의 실란 화합물, 한 분자 중에 규소원자결합 알케닐기 혹은 규소원자결합 수소원자, 및 규소원자결합 알콕시기를 각각 적어도 1개씩 갖는 실록산 화합물, 규소원자결합 알콕시기를 적어도 1개 갖는 실란 화합물, 또는 실록산 화합물과 한 분자 중에 규소원자결합 수산기와 규소원자결합 알케닐기를 각각 적어도 1개씩 갖는 실록산 화합물과의 혼합물, 메틸폴리실리케이트, 에틸폴리실리케이트, 에폭시기함유 에틸폴리실리케이트가 예시된다.In the present invention, (D) an adhesion-imparting agent may be contained in order to improve the adhesiveness of the cured product to the substrate which is in contact during the curing. As the component (D), an organosilicon compound having at least one alkoxy group bonded to a silicon atom in one molecule is preferable. As the alkoxy group, a methoxy group, an ethoxy group, a propoxy group, a butoxy group and a methoxyethoxy group are exemplified, and a methoxy group is particularly preferable from the viewpoint of excellent adhesiveness to a substrate. Examples of the group other than the alkoxy group bonded to the silicon atom of the organosilicon compound include a substituted or unsubstituted monovalent hydrocarbon group such as an alkyl group, an alkenyl group, an aryl group, an aralkyl group and a halogenated alkyl group, a 3-glycidoxypropyl group Epoxycyclohexyl) ethyl group, and 3- (3,4-epoxycyclohexyl) propyl group; a glycidoxyalkyl group such as 2- (3,4-epoxycyclohexyl) And an oxiranylalkyl group such as an 8-oxiranyloxyl group; an alkyl group-containing monovalent organic group such as a 3-methacryloxypropyl group; and a hydrogen atom. The organosilicon compound preferably has an alkenyl group bonded to a silicon atom or a hydrogen atom bonded to a silicon atom. It is also preferable that the organosilicon compound has at least one epoxy group-containing monovalent organic group in one molecule in view of being able to impart good adhesiveness to various substrates. Examples of such organosilicon compounds include organosilane compounds, organosiloxane oligomers, and alkyl silicates. The molecular structure of the organosiloxane oligomer or alkyl silicate is exemplified by linear, branched, straight-chain, branched, cyclic, and meso structures, and particularly preferred is linear, branched or delocalized. Examples of such organic silicon compounds include silane compounds such as 3-glycidoxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and 3-methacryloxypropyltrimethoxysilane, A siloxane compound having at least one silicon atom bonded alkenyl group or silicon atom bonded hydrogen atom and at least one silicon atom bonded alkoxy group in one molecule, a silane compound having at least one silicon atom bonded alkoxy group, or a silane compound having at least one silicon atom bonded alkoxy group, A mixture of a siloxane compound having at least one bonded hydroxyl group and at least one silicon-bonded alkenyl group, methyl polysilicate, ethyl polysilicate, and epoxy group-containing ethyl polysilicate.

본 조성물에 있어서, (D)성분의 함유량은 한정되지 않으나, 경화도중에 접촉되어 있는 기재에 대하여 양호하게 접착하는 점에서, 상기 (A)성분, (B)성분, (C)성분의 합계 100질량부에 대하여, 0.01~10질량부의 범위내인 것이 바람직하다.In the present composition, the content of the component (D) is not limited, but the total amount of the components (A), (B) and (C) Is preferably in the range of 0.01 to 10 parts by mass relative to the part of the resin.

또한, 본 발명에는, 기타 임의의 성분으로서, 3-부틴-2-올, 2-메틸-3-부틴-2-올, 1-펜틴-3-올, 3,4-디메틸-1-펜틴-3-올, 3-메틸-1-펜틴-3-올, 3-에틸-1-펜틴-3-올, 1-헵틴-3-올, 5-메틸-1-헥신-3-올, 1-옥틴-3-올, 4-에틸-1-옥틴-3-올, 3,5-디메틸-1-헥신-3-올, 3-에틸-1-헵틴-3-올, 1-에티닐-1-시클로헥산올 등의 알킨 화합물, 1,3,5,7-테트라메틸-1,3,5,7-테트라비닐시클로테트라실록산, 1,3,5,7-테트라메틸-1,3,5,7-테트라헥세닐시클로테트라실록산 등의 실록산 화합물, 벤조트리아졸 등의 반응억제제를 함유할 수도 있다. 본 조성물에 있어서, 이 반응억제제의 함유량은 한정되지 않으나, 상기 (A)성분, (B)성분, (C)성분의 합계 100질량부에 대하여, 0.01~5질량부의 범위내인 것이 바람직하다.In the present invention, as other optional components, 3-butyne-2-ol, 2-methyl-3-butyne- 3-ol, 3-methyl-1-pentyn-3-ol, 3-ethyl- 3-ol, 3-ethyl-1-heptyn-3-ol, 1-ethynyl- -Alkyne compounds such as cyclohexanol, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, 1,3,5,7-tetramethyl-1,3,5 , Silane compounds such as 7-tetrahexenylcyclotetrasiloxane, and reaction inhibitors such as benzotriazole. In the present composition, the content of the reaction inhibitor is not limited, but is preferably in the range of 0.01 to 5 parts by mass based on 100 parts by mass of the total of the components (A), (B) and (C).

본 발명에는, 기타 임의의 성분으로서, 형광체를 함유할 수 있다. 이 형광체는, 예를 들어, LED에 널리 이용되고 있는, 산화물계 형광체, 산질화물계 형광체, 질화물계 형광체, 황화물계 형광체, 산황화물계 형광체 등으로 이루어진 황색, 적색, 녹색, 청색 발광형광체를 들 수 있다. 산화물계 형광체는, 세륨이온을 포함하는 이트륨, 알루미늄, 가넷계의 YAG계 녹색~황색 발광형광체, 세륨이온을 포함하는 테르븀, 알루미늄, 가넷계의 TAG계 황색 발광형광체, 및, 세륨이나 유로퓸이온을 포함하는 실리케이트계 녹색~황색 발광형광체가 예시된다. 산질화물계 형광체는, 유로퓸이온을 포함하는 규소, 알루미늄, 산소, 질소계의 사이알론계 적색~녹색 발광형광체가 예시된다. 질화물계 형광체로는, 유로퓸이온을 포함하는 칼슘, 스트론튬, 알루미늄, 규소, 질소계의 캐슨계(CASN 및 S-CASN)적색 발광형광체가 예시된다. 황화물계 형광체는, 구리이온이나 알루미늄이온을 포함하는 ZnS계 녹색발색형광체가 예시된다. 산황화물계 형광체는, 유로퓸이온을 포함하는 Y2O2S계 적색 발광형광체가 예시된다. 이들의 형광체는, 1종 또는 2종 이상의 혼합물을 이용할 수도 있다. 본 조성물에 있어서, 이 형광체의 함유량은 특별히 한정되지 않으나, (A)성분, (B)성분, (C)성분의 합계 100질량부에 대하여, 1~20질량부의 범위내인 것이 바람직하다.In the present invention, a phosphor may be contained as another arbitrary component. This phosphor can be obtained by mixing yellow, red, green and blue light emitting phosphors which are widely used for LEDs and which are composed of oxide-based fluorescent material, oxynitride-based fluorescent material, nitride-based fluorescent material, sulfide- . The oxide-based fluorescent material is preferably at least one selected from the group consisting of yttrium, aluminum, garnet YAG green-yellow light-emitting fluorescent material containing cerium ions, terbium, aluminum, garnet-based TAG yellow light-emitting fluorescent material containing cerium ion, Based green to yellow light-emitting phosphors. Examples of the oxynitride-based fluorescent material include silicon, aluminum, oxygen and nitrogen-based sialon red to green luminescent fluorescent materials containing europium ions. Examples of the nitride-based fluorescent substance include calcium, strontium, aluminum, silicon, and nitrogen-based cathode-based (CASN and S-CASN) red luminescent phosphors including europium ions. As the sulfide-based fluorescent material, a ZnS-based green coloring fluorescent material containing copper ion or aluminum ion is exemplified. As the oxalate-based fluorescent material, a Y 2 O 2 S-based red-emitting fluorescent material containing europium ions is exemplified. These phosphors may be used alone or in combination of two or more. In the present composition, the content of the phosphor is not particularly limited, but is preferably within a range of 1 to 20 parts by mass based on 100 parts by mass of the total of the components (A), (B) and (C).

본 발명의 LED용 봉지재 조성물은 상기의 성분 이외에 본 발명의 목적나 효과를 손상시키지 않는 범위에서 필요에 따라, 첨가제를 함유할 수 있다. 첨가제로는, 예를 들어, 무기필러, 산화방지제, 자외선흡수제, 열광안정제, 분산제, 대전방지제, 중합금지제, 소포제, 용제, 무기형광체, 라디칼금지제, 계면활성제, 도전성 부여제, 안료, 염료, 금속불활성화제가 예시되고, 각종 첨가제는 특별히 제한되지 않는다.The encapsulating material composition for LED of the present invention may contain, in addition to the above-mentioned components, an additive if necessary insofar as the objects and effects of the present invention are not impaired. Examples of the additive include inorganic fillers, antioxidants, ultraviolet absorbers, heat stabilizers, dispersants, antistatic agents, polymerization inhibitors, antifoaming agents, solvents, inorganic phosphors, radical inhibitors, surfactants, , Metal deactivating agents are exemplified, and various additives are not particularly limited.

상기 (A)성분의 오가노폴리실록산과, 상기 (B)성분의 오가노폴리실록산과, 상기 (C)성분의 하이드로실릴화반응촉매란, 이들 성분 중 1종 또는 2종 이상 포함하는 액을 각각 조제해두고, 사용직전에 복수의 액을 혼합하여, 본 발명에 따른 LED용 봉지재 조성물을 조제할 수도 있다. 예를 들어, (A)성분의 오가노폴리실록을 포함하는 제1 액과, 상기 (B)성분의 오가노폴리실록산을 포함하는 제2 액을 각각 조제해두고, 사용직전에 제1 액과 제2 액을 혼합하여, 본 발명에 따른 LED용 봉지재 조성물을 조제할 수도 있다. 상기 제1 액 및 상기 제2 액의 적어도 일방이, 상기 (C)성분의 하이드로실릴화반응촉매를 포함한다. 상기 제1 액에 하이드로실릴화반응촉매를 포함하는 것이 바람직하다. 이와 같이 2액으로 함으로써 보존안정성이 향상된다.The organosiloxane of the component (A), the organopolysiloxane of the component (B) and the hydrosilylation reaction catalyst of the component (C) refer to a solution containing one or more of these components And a plurality of liquids may be mixed immediately before use to prepare the sealing composition for LED according to the present invention. For example, a first liquid containing the organopolysiloxane of the component (A) and a second liquid containing the organopolysiloxane of the component (B) are each prepared, and the first liquid and the second liquid It is also possible to prepare the encapsulating material composition for LED according to the present invention. At least one of the first liquid and the second liquid includes the hydrosilylation reaction catalyst of the component (C). It is preferable that the first liquid contains a hydrosilylation reaction catalyst. This two-part solution improves the storage stability.

본 발명의 LED용 봉지재 조성물은, 가열함으로써 경화할 수 있다. 본 발명의 LED용 봉지재 조성물을 경화시키는 온도는, 대략 80℃ 내지 200℃의 온도에서 행하는 것이 바람직하다. 상기 가열처리의 방법은 특별히 한정되는 것은 아니나, 적절한 분위기하, 즉 대기, 질소 등의 불활성가스, 진공중 등에서, 핫플레이트 또는 오븐을 이용하여 행하는 방법을 예시할 수 있다.The encapsulating material composition for LED of the present invention can be cured by heating. The temperature for curing the sealing composition for LED of the present invention is preferably about 80 캜 to 200 캜. The method of the heat treatment is not particularly limited, but a method of performing the heat treatment using a hot plate or an oven under an appropriate atmosphere, that is, in an inert gas such as air, nitrogen, or vacuum, may be exemplified.

본 발명의 LED용 봉지재 조성물은 LED봉지용으로서 사용할 수 있다. 본 발명의 LED용 봉지재 조성물을 적용할 수 있는 LED소자는 특별히 제한되지 않는다. 본 발명의 LED용 봉지재 조성물을 LED소자에 적용하는 방법은 특별히 제한되지 않는다. 본 발명의 LED용 봉지재 조성물은 LED봉지용 이외에도 예를 들어, 광학렌즈로서 사용할 수 있다.The encapsulant composition for LED of the present invention can be used for LED encapsulation. The LED element to which the encapsulant composition for LED of the present invention can be applied is not particularly limited. The method for applying the encapsulant composition for LED of the present invention to an LED element is not particularly limited. The encapsulating material composition for LED of the present invention can be used, for example, as an optical lens in addition to an LED encapsulating material.

실시예Example

본 발명의 LED용 봉지재 조성물로부터 얻어진 경화물의 특성을 다음과 같이 하여 측정하였다.The properties of the cured product obtained from the sealing composition for LED of the present invention were measured as follows.

(경화물의 제작)(Preparation of Cured Product)

LED용 봉지재 조성물로부터 얻어진 경화물의 내열투명성을 평가하기 위해, 본 발명의 LED용 봉지재 조성물을, 오븐에서 100℃, 1시간 베이크한 후, 150℃, 3시간 베이크하고, 무알칼리유리기판에 두께 1mm의 경화물을 제작하였다. LED용 봉지재 조성물로부터 얻어진 경화물의 황화내성을 평가하기 위해, 은도금된 전극을 구비한 LED기판에 본 발명의 LED용 봉지재 조성물을 도포하고, 오븐에서 100℃, 1시간 베이크한 후, 150℃, 3시간 베이크하여, LED장치를 제작하였다.In order to evaluate the heat-resistant transparency of the cured product obtained from the sealing composition for LED, the sealing composition for LED of the present invention was baked in an oven at 100 DEG C for 1 hour and then baked at 150 DEG C for 3 hours, Thereby producing a cured product having a thickness of 1 mm. In order to evaluate the sulfide resistance of the cured product obtained from the encapsulant composition for LED, the LED encapsulant composition of the present invention was applied to an LED substrate provided with silver-plated electrodes, baked in an oven at 100 ° C for 1 hour, And baked for 3 hours to fabricate an LED device.

(내열투명성 시험)(Heat resistance transparency test)

얻어진 경화물의 자외가시흡수스펙트럼을 주식회사시마즈제작소제 UV-3100PC를 이용하여, 파장 450nm에 있어서의 두께 1mm의 투과율을 측정하였다. 측정 후, 150℃로 온도설정한 대류식 오븐내(공기중)에서 이 경화물을 1000시간 가열하였다. 가열 후의 경화물의 투과율을 측정하고, 투과율이 90% 이상일 때, 경화물 형성시의 가열처리를 거쳐도 높은 투명성을 갖는 것으로 평가하고 「○」로 하였다. 투과율이 90% 미만인 것, 및 내열투명성 시험의 평가의 과정에서 균열된 것은, 내열투명성을 갖지 않는다고 평가하고 「×」로 평가하였다.The ultraviolet absorption spectrum of the obtained cured product was measured using a UV-3100PC manufactured by Shimadzu Corporation, and the transmittance at a wavelength of 450 nm was measured. After the measurement, the cured product was heated in a convection oven (in air) set at 150 캜 for 1000 hours. The transmittance of the cured product after heating was measured. When the transmittance was 90% or more, it was evaluated as having high transparency even after the heat treatment at the time of forming the cured product. Transmittance of less than 90% and that which was cracked during the evaluation of the heat-resistant transparency test were evaluated as having no heat-resistant transparency and evaluated as "x".

(황화내성 시험)(Sulfation resistance test)

제작한 LED장치를, 80℃, 황분위기하의 오븐에 넣고, 24시간 후, 은도금전극을 현미경으로 관찰하였다. 은도금전극에 변색이 보이지 않는 경우를 「○」, 은도금전극이 흑색으로 변색한 경우를 「×」로 판정하였다. 나아가, LED용 봉지재 조성물을 경화시켰을 때, 경화물이 미경화인 경우, 경화물이 균열된 경우, 및 경화물이 백탁한 경우는 평가불능으로 판단하고 「-」로 판정하였다.The prepared LED device was placed in an oven under a sulfur atmosphere at 80 DEG C, and after 24 hours, the silver electrode was observed under a microscope. &Quot; o " when no discoloration was observed on the silver electrode, and " X " when the silver electrode was changed to black. Further, when the encapsulating composition for LED was cured, when the cured product was uncured, when the cured product was cracked, and when the cured product was opaque, it was judged to be unmeasurable and was judged as "-".

(밀착성 시험)(Adhesion test)

황화내성 시험을 행한 후에, 제작한 LED장치에 형성된 경화물을 현미경으로 확인하였다. 이 경화물에 대하여, 은도금전극과의 박리가 확인되지 않은 경우에는 밀착성이 우수한 것으로서 「○」로 평가하고, 박리가 확인된 경우에는 밀착성이 뒤떨어지는 것으로서 「×」로 평가하고, LED용 봉지재 조성물을 경화시켰을 때, 경화물이 미경화인 경우, 경화물이 균열된 경우, 및 경화물이 백탁한 경우는 평가불능으로 판단하고 「-」로 평가하였다.After the sulfide resistance test, the cured product formed in the produced LED device was confirmed by a microscope. When the peeling of the cured product was not confirmed with the silver electrode, it was evaluated as " Good " as being excellent in adhesion, and when the peeling was confirmed, it was evaluated as " When the composition was cured, when the cured product was uncured, when the cured product was cracked, and when the cured product was opaque, it was judged unmeasurable and evaluated as "-".

제조예 및 실시예에서 사용한 시약은 하기의 것을 사용하였다.The following reagents were used in the preparation examples and examples.

마그네슘절삭편(관동화학주식회사제)Magnesium cutting pieces (manufactured by Kanto Chemical Co., Ltd.)

4-브로모비페닐(도쿄화성공업주식회사제)4-bromobiphenyl (manufactured by Tokyo Chemical Industry Co., Ltd.)

테트라하이드로푸란(쥰세이화학주식회사제)Tetrahydrofuran (manufactured by Junsei Chemical Co., Ltd.)

톨루엔(쥰세이화학주식회사제)Toluene (manufactured by Junsei Chemical Co., Ltd.)

트리플루오로메탄설폰산(도쿄화성공업주식회사제)Trifluoromethanesulfonic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)

페닐트리메톡시실란(도쿄화성공업주식회사제)Phenyltrimethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.)

메틸트리메톡시실란(도쿄화성공업주식회사제)Methyltrimethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.)

1,3-디비닐-1,1,3,3-테트라메틸디실록산(도쿄화성공업주식회사제)1,3-divinyl-1,1,3,3-tetramethyldisiloxane (manufactured by Tokyo Chemical Industry Co., Ltd.)

디페닐디메톡시실란(도쿄화성공업주식회사제)Diphenyldimethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.)

디메틸디메톡시실란(도쿄화성공업주식회사제)Dimethyldimethoxysilane (manufactured by Tokyo Chemical Industry Co., Ltd.)

1,1,3,3-테트라메틸디실록산(도쿄화성공업주식회사제)1,1,3,3-tetramethyldisiloxane (manufactured by Tokyo Chemical Industry Co., Ltd.)

1,3-디비닐-1,1,3,3-테트라메틸디실록산착체(시그마 알드리치사제)1,3-divinyl-1,1,3,3-tetramethyldisiloxane complex (manufactured by Sigma-Aldrich)

이하, 제조예와 실시예를 들어 본 발명을 보다 상세히 설명한다. 본 발명은, 이하의 제조예와 실시예로 한정되지 않는다.Hereinafter, the present invention will be described in more detail with reference to Production Examples and Examples. The present invention is not limited to the following production examples and examples.

<제조예 1>&Lt; Preparation Example 1 &

비페닐릴페닐디메톡시실란의 합성Synthesis of biphenyl-phenyldimethoxysilane

응축기를 구비한 1L의 반응플라스크에, 마그네슘절삭편 15.47g(0.472mol)을 투입하고, 질소벌룬을 이용하여 플라스크 중의 공기를 질소로 치환하였다. 여기에, 4-브로모비페닐 100.00g(0.429mol), 및 테트라하이드로푸란 382g의 혼합물을, 실온(대략 23℃하, 1시간 적하하고, 다시 60분간 교반함으로써, 그리냐르시약을 조제하였다.15.47 g (0.472 mol) of magnesium cutting flakes was charged into a 1 L reaction flask equipped with a condenser, and nitrogen in the flask was replaced with nitrogen using a nitrogen balloon. Then, a mixture of 100.00 g (0.429 mol) of 4-bromobiphenyl and 382 g of tetrahydrofuran was added dropwise at room temperature (approximately 23 占 폚 for 1 hour, and stirred for another 60 minutes to prepare a Grignard reagent.

2L의 반응플라스크에, 페닐트리메톡시실란 93.57g(0.472mol), 및 테트라하이드로푸란 191g을 투입하고, 질소벌룬을 이용하여 플라스크 중의 공기를 질소로 치환하였다. 여기에, 상기 그리냐르시약을, 실온하, 30분간 적하하고, 다시 실온에서 24시간 교반하였다. 이 반응혼합물로부터, 이배포레이터를 이용하여 테트라하이드로푸란을 감압유거하였다. 얻어진 잔사에, 헥산 500g을 첨가하고, 실온하 60분간 교반하고, 가용물을 추출한 후, 불용물을 여별하였다. 이 불용물에, 재차 헥산 500g을 첨가하고, 마찬가지로 불용물을 여별하였다. 각각의 여액을 혼합하고, 이배포레이터를 이용하여 헥산을 감압유거하고, 조생성물을 얻었다. 조생성물을 감압증류함으로써, 목적으로 하는 비페닐릴페닐디메톡시실란 67.4g(수율 49%)을 얻었다.93.57 g (0.472 mol) of phenyltrimethoxysilane and 191 g of tetrahydrofuran were fed into a 2 L reaction flask, and nitrogen in the flask was replaced with nitrogen using a nitrogen balloon. The Grignard reagent was added dropwise at room temperature for 30 minutes and further stirred at room temperature for 24 hours. From this reaction mixture, tetrahydrofuran was distilled off under reduced pressure using this distributor. To the obtained residue, 500 g of hexane was added, and the mixture was stirred at room temperature for 60 minutes. After the soluble matter was extracted, the insoluble matter was filtered off. 500 g of hexane was again added to the insolubles, and the insolubles were filtered off. The respective filtrates were mixed, and hexane was distilled off under reduced pressure using this distributor to obtain a crude product. The crude product was distilled under reduced pressure to obtain 67.4 g (yield: 49%) of the objective biphenylphenyldimethoxysilane.

<제조예 2>&Lt; Preparation Example 2 &

비페닐릴메틸디메톡시실란의 합성Synthesis of biphenylmethyldimethoxysilane

응축기를 구비한 1L의 반응플라스크에, 마그네슘절삭편 15.47g(0.472mol)을 투입하고, 질소벌룬을 이용하여 플라스크 중의 공기를 질소로 치환하였다. 여기에, 4-브로모비페닐 100.00g(0.429mol), 및 테트라하이드로푸란 382g의 혼합물을, 실온(대략 23℃하, 1시간 적하하고, 다시 60분간 교반함으로써, 그리냐르시약을 조제하였다.15.47 g (0.472 mol) of magnesium cutting flakes was charged into a 1 L reaction flask equipped with a condenser, and nitrogen in the flask was replaced with nitrogen using a nitrogen balloon. Then, a mixture of 100.00 g (0.429 mol) of 4-bromobiphenyl and 382 g of tetrahydrofuran was added dropwise at room temperature (approximately 23 占 폚 for 1 hour, and stirred for another 60 minutes to prepare a Grignard reagent.

2L의 반응플라스크에, 메틸트리메톡시실란 93.57g(0.472mol), 및 테트라하이드로푸란 191g을 투입하고, 질소벌룬을 이용하여 플라스크 중의 공기를 질소로 치환하였다. 여기에, 상기 그리냐르시약을, 실온하, 30분간 적하하고, 다시 실온에서 24시간 교반하였다. 이 반응혼합물로부터, 이배포레이터를 이용하여 테트라하이드로푸란을 감압유거하였다. 얻어진 잔사에, 헥산 500g을 첨가하고, 실온하 60분간 교반하여, 가용물을 추출한 후, 불용물을 여별하였다. 이 불용물에, 재차 헥산 500g을 첨가하고, 마찬가지로 불용물을 여별하였다. 각각의 여액을 혼합하고, 이배포레이터를 이용하여 헥산을 감압유거하고, 조생성물을 얻었다. 조생성물을 감압증류함으로써, 목적으로 하는 비페닐릴메틸디메톡시실란 82.2g(수율76%)을 얻었다.93.57 g (0.472 mol) of methyltrimethoxysilane and 191 g of tetrahydrofuran were fed into a 2 L reaction flask, and nitrogen in the flask was replaced with nitrogen using a nitrogen balloon. The Grignard reagent was added dropwise at room temperature for 30 minutes and further stirred at room temperature for 24 hours. From this reaction mixture, tetrahydrofuran was distilled off under reduced pressure using this distributor. To the obtained residue, 500 g of hexane was added, and the mixture was stirred at room temperature for 60 minutes to extract the soluble matter, followed by filtering off the insoluble matter. 500 g of hexane was again added to the insolubles, and the insolubles were filtered off. The respective filtrates were mixed, and hexane was distilled off under reduced pressure using this distributor to obtain a crude product. The crude product was distilled under reduced pressure to obtain 82.2 g (yield: 76%) of the objective biphenylmethyldimethoxysilane.

<합성예 1>&Lt; Synthesis Example 1 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴메틸디메톡시실란 103.36g(0.40mol), 디페닐디메톡시실란 122.19g(0.50mol) 및 톨루엔 244g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-1) 199g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 103.36 g (0.40 mol) of biphenylmethyldimethoxysilane, 122.19 g of diphenyldimethoxysilane g) and 244 g of toluene were mixed. Then, 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added, and the mixture was heated under reflux for 1 hour. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resulting salt was filtered off and the low boiling point product was removed by heating under reduced pressure to obtain 199 g of an organopolysiloxane (P-1) (yield: 98%).

<합성예 2>&Lt; Synthesis Example 2 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴메틸디메톡시실란 103.36g(0.40mol), 디메틸디메톡시실란 60.11g(0.50mol) 및 톨루엔 182g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-2) 138g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 103.36 g (0.40 mol) of biphenylmethyldimethoxysilane, 60.11 g of dimethyldimethoxysilane (0.50mol) and 182g of toluene were mixed. Then, 32.44g (1.80mol) of water and 0.75g (5mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resultant salt was filtered off and the low boiling point product was removed by heating under reduced pressure to obtain 138 g of the organopolysiloxane (P-2) (yield: 98%).

<합성예 3>&Lt; Synthesis Example 3 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴페닐디메톡시실란 128.18g(0.40mol), 디페닐디메톡시실란 122.19g(0.50mol) 및 톨루엔 269g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-3) 233g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 128.18 g (0.40 mol) of biphenylylphenyldimethoxysilane, 122.19 g of diphenyldimethoxysilane g) and 269 g of toluene were mixed. Then, 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added, and the mixture was heated under reflux for 1 hour. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resultant salt was filtered off and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 233 g of an organopolysiloxane (P-3) (yield: 98%).

<합성예 4>&Lt; Synthesis Example 4 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴페닐디메톡시실란 128.18g(0.40mol), 디메틸디메톡시실란 60.11g(0.50mol) 및 톨루엔 207g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-4) 207g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 128.18 g (0.40 mol) of biphenylsilylphenyldimethoxysilane, 60.11 g of dimethyldimethoxysilane (0.50 mol) of triethylamine and 207 g of toluene were mixed. Then, 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resultant salt was filtered off and the low boiling point product was removed from the resulting clear solution by heating under reduced pressure to obtain 207 g of an organopolysiloxane (P-4) (yield: 98%).

<합성예 5>&Lt; Synthesis Example 5 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴메틸디메톡시실란 51.68g(0.20mol), 비페닐릴페닐디메톡시실란 64.09g(0.20mol), 디페닐디메톡시실란 122.19g(0.50mol) 및 톨루엔 257g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-5) 211g(수율: 98%)을 얻었다.To the reaction vessel, 18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 51.68 g (0.20 mol) of biphenylmethyldimethoxysilane, (1.80mol) of water and 0.75g (5mmol) of trifluoromethanesulfonic acid were charged into a flask equipped with a stirrer, a reflux condenser and a thermometer, And the mixture was heated under reflux for 1 hour. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resultant salt was filtered off and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 211 g of an organopolysiloxane (P-5) (yield: 98%).

<합성예 6>&Lt; Synthesis Example 6 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 1.86g(0.01mol), 비페닐릴메틸디메톡시실란 103.36g(0.40mol), 디페닐디메톡시실란 61.09g(0.25mol), 디메틸디메톡시실란 30.06g(0.25mol) 및 톨루엔 226g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-6) 180g(수율: 98%)을 얻었다.1.86 g (0.01 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 103.36 g (0.40 mol) of biphenylmethyldimethoxysilane, 61.09 g of diphenyldimethoxysilane 30 g (0.25 mol) of dimethyldimethoxysilane and 226 g of toluene were mixed. Then, 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and heated for 1 hour And reflux was carried out. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resulting salt was filtered off and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 180 g of an organopolysiloxane (P-6) (yield: 98%).

<합성예 7>&Lt; Synthesis Example 7 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 55.92g(0.30mol), 비페닐릴메틸디메톡시실란 77.52g(0.30mol), 디페닐디메톡시실란 61.09g(0.25mol), 디메틸디메톡시실란 30.06g(0.25mol) 및 톨루엔 225g을 혼합한 후, 물 28.83g(1.60mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-7) 184g(수율: 98%)을 얻었다.55.92 g (0.30 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 77.52 g (0.30 mol) of biphenylylmethyldimethoxysilane, 61.09 g of diphenyldimethoxysilane 28.06 g (1.60 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added to the mixture, and the mixture was heated for 1 hour And reflux was carried out. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resulting salt was filtered off and the low boiling point product was removed from the resulting clear solution by heating under reduced pressure to obtain 184 g of an organopolysiloxane (P-7) (yield: 98%).

<합성예 8>&Lt; Synthesis Example 8 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴메틸디메톡시실란 25.84g(0.10mol), 디페닐디메톡시실란 97.75g(0.40mol), 디메틸디메톡시실란 48.09g(0.40mol) 및 톨루엔 337g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-8) 146g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 25.84 g (0.10 mol) of biphenylmethyldimethoxysilane, and 97.75 g of diphenyldimethoxysilane , 32.09 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added to the mixture, and the mixture was heated for 1 hour And reflux was carried out. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. After the resulting salt was filtered off, the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 146 g of an organopolysiloxane (P-8) (yield: 98%).

<합성예 9>&Lt; Synthesis Example 9 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴메틸디메톡시실란 180.87g(0.70mol), 디페닐디메톡시실란 36.66g(0.15mol), 디메틸디메톡시실란 18.03g(0.15mol) 및 톨루엔 254g을 혼합한 후, 물 36.04g(2.00mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-9) 204g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 180.87 g (0.70 mol) of biphenylylmethyldimethoxysilane, and diphenyldimethoxysilane 36.66 36.04g (2.00mol) of water and 0.75g (5mmol) of trifluoromethanesulfonic acid were added to the mixture, and the mixture was heated for 1 hour And reflux was carried out. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resulting salt was filtered off, and the low boiling point product was removed by heating under reduced pressure to obtain 204 g of an organopolysiloxane (P-9) (yield: 98%).

<합성예 10>&Lt; Synthesis Example 10 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴페닐디메톡시실란 32.05g(0.10mol), 디페닐디메톡시실란 97.75g(0.40mol), 디메틸디메톡시실란 48.09g(0.40mol) 및 톨루엔 197g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-10) 152g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 32.05 g (0.10 mol) of biphenylsilylphenyldimethoxysilane, 97.75 g of diphenyldimethoxysilane (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were charged, and the mixture was heated for 1 hour, And reflux was carried out. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resulting salt was filtered off and the low boiling point product was removed by heating under reduced pressure to obtain 152 g of an organopolysiloxane (P-10) (yield: 98%).

<합성예 11>&Lt; Synthesis Example 11 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 비페닐릴페닐디메톡시실란 224.32g(0.70mol), 디페닐디메톡시실란 36.66g(0.15mol), 디메틸디메톡시실란 18.03g(0.15mol) 및 톨루엔 298g을 혼합한 후, 물 36.04g(2.00mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-11) 247g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 224.32 g (0.70 mol) of biphenylsilylphenyldimethoxysilane, and 0.45 mol of diphenyldimethoxysilane 36.66 36.04g (2.00mol) of water and 0.75g (5mmol) of trifluoromethanesulfonic acid were added to the mixture, and the mixture was heated for 1 hour And reflux was carried out. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resultant salt was filtered off and the low boiling point product was removed from the resulting clear solution by heating under reduced pressure to obtain 247 g of an organopolysiloxane (P-11) (yield: 98%).

<합성예 12>&Lt; Synthesis Example 12 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 46.60g(0.25mol), 비페닐릴페닐디메톡시실란 192.27g(0.60mol), 디페닐디메톡시실란 18.33g(0.075mol), 디메틸디메톡시실란 9.02g(0.075mol) 및 톨루엔 229g을 혼합한 후, 물 27.03g(1.50mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-12) 191g(수율: 98%)을 얻었다.To the reaction vessel, 46.60 g (0.25 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 192.27 g (0.60 mol) of biphenylsilylphenyldimethoxysilane, (0.075 mol) of dimethyldimethoxysilane, 9.02 g (0.075 mol) of dimethyldimethoxysilane and 229 g of toluene were mixed and 27.03 g (1.50 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were charged. And reflux was carried out. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resulting salt was filtered off and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 191 g of an organopolysiloxane (P-12) (yield: 98%).

<합성예 13>&Lt; Synthesis Example 13 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 9.32g(0.05mol), 비페닐릴페닐디메톡시실란 64.09g(0.20mol), 디페닐디메톡시실란 18.33g(0.075mol), 디메틸디메톡시실란 90.17g(0.75mol) 및 톨루엔 151g을 혼합한 후, 물 34.24g(1.90mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-13) 105g(수율: 98%)을 얻었다.9.32 g (0.05 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 64.09 g (0.20 mol) of biphenylsilylphenyldimethoxysilane, 18.33 g of diphenyldimethoxysilane (1.90 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added to the mixture, and the mixture was heated for 1 hour, And reflux was carried out. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resulting salt was filtered off and the low boiling point product was removed by heating under reduced pressure to obtain 105 g of an organopolysiloxane (P-13) (yield: 98%).

<합성예 14>&Lt; Synthesis Example 14 &

반응용기에, 1,3-디비닐-1,1,3,3-테트라메틸디실록산 18.64g(0.10mol), 디페닐디메톡시실란 109.97g(0.45mol), 디메틸디메톡시실란 54.10g(0.45mol) 및 톨루엔 183g을 혼합한 후, 물 34.24g(1.90mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 그 후, 85℃가 될 때까지 가열상압유거를 행하였다. 이어서 수산화칼륨 0.056g(1.0mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하여, 아세트산 0.30g(0.50mmol)을 투입하고, 중화반응을 행하였다. 생성된 염을 여별한 후, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-14) 138g(수율: 98%)을 얻었다.18.64 g (0.10 mol) of 1,3-divinyl-1,1,3,3-tetramethyldisiloxane, 109.97 g (0.45 mol) of diphenyldimethoxysilane, 54.10 g (0.45 mol) of dimethyldimethoxysilane, mol) and 183 g of toluene were mixed. Then, 34.24 g (1.90 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. Thereafter, heating atmospheric pressure raising was carried out until the temperature reached 85 캜. Subsequently, 0.056 g (1.0 mmol) of potassium hydroxide was added, and the mixture was heated at normal pressure until the reaction temperature became 120 ° C, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, and 0.30 g (0.50 mmol) of acetic acid was added thereto to carry out a neutralization reaction. The resulting salt was filtered off and the low boiling point product was removed from the resulting clear solution by heating under reduced pressure to obtain 138 g of an organopolysiloxane (P-14) (yield: 98%).

<합성예 15>&Lt; Synthesis Example 15 &

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴메틸디메톡시실란 103.36g(0.40mol), 디페닐디메톡시실란 122.19g(0.50mol) 및 톨루엔 239g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-15) 194g(수율: 98%)을 얻었다.To the reaction vessel, 13.43 g (0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 103.36 g (0.40 mol) of biphenylmethyldimethoxysilane, 122.19 g (0.50 mol) of diphenyldimethoxysilane, , 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were charged, heated atmospheric pressure was stirred until the reaction temperature reached 120 ° C., and the reaction was carried out at this temperature for 6 hours . The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed, and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 194 g of an organopolysiloxane (P-15) (yield: 98%).

<합성예 16>&Lt; Synthesis Example 16 &

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴메틸디메톡시실란 103.36g(0.40mol), 디메틸디메톡시실란 60.11g(0.50mol) 및 톨루엔 177g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-16) 133g(수율: 98%)을 얻었다.(0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 103.36 g (0.40 mol) of biphenylmethyldimethoxysilane, 60.11 g (0.50 mol) of dimethyldimethoxysilane and 177 g , 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added, and the mixture was heated under reflux for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 133 g (yield: 98%) of organopolysiloxane (P-16).

<합성예 17>&Lt; Synthesis Example 17 &

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴페닐디메톡시실란 128.18g(0.40mol), 디페닐디메톡시실란 122.19g(0.50mol) 및 톨루엔 264g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-17) 218g(수율: 98%)을 얻었다.To the reaction vessel, 13.43 g (0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 128.18 g (0.40 mol) of biphenylylphenyldimethoxysilane, 122.19 g (0.50 mol) of diphenyldimethoxysilane, , 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added, and the mixture was heated under reflux for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 218 g of an organopolysiloxane (P-17) (yield: 98%).

<합성예 18>&Lt; Synthesis Example 18 &

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴페닐디메톡시실란 128.18g(0.40mol), 디메틸디메톡시실란 60.11g(0.50mol) 및 톨루엔 202g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-18) 157g(수율: 98%)을 얻었다.To the reaction vessel were added 13.43 g (0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 128.18 g (0.40 mol) of biphenylphenyldimethoxysilane, 60.11 g (0.50 mol) of dimethyldimethoxysilane and 202 g , 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added, and the mixture was heated under reflux for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The aqueous layer was removed, and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 157 g of an organopolysiloxane (P-18) (yield: 98%).

<합성예 19>&Lt; Synthesis Example 19 &

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴메틸디메톡시실란 51.68g(0.20mol), 비페닐릴페닐디메톡시실란 64.09g(0.20mol), 디페닐디메톡시실란 122.19g(0.50mol) 및 톨루엔 220g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-19) 175g(수율: 98%)을 얻었다.13.43 g (0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 51.68 g (0.20 mol) of biphenylmethyldimethoxysilane, 64.09 g (0.20 mol) of biphenylphenyldimethoxysilane, , 122.19 g (0.50 mol) of diphenyldimethoxysilane and 220 g of toluene were mixed. Then, 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were charged and refluxed for 1 hour . The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed, and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 175 g of an organopolysiloxane (P-19) (yield: 98%).

<합성예 20>&Lt; Synthesis Example 20 &

반응용기에, 1,1,3,3-테트라메틸디실록산 1.34g(0.010mol), 비페닐릴메틸디메톡시실란 103.36g(0.40mol), 디페닐디메톡시실란 61.09g(0.25mol), 디메틸디메톡시실란 30.06g(0.25mol) 및 톨루엔 196g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-20) 151g(수율: 98%)을 얻었다.To the reaction vessel, 1.34 g (0.010 mol) of 1,1,3,3-tetramethyldisiloxane, 103.36 g (0.40 mol) of biphenylmethyldimethoxysilane, 61.09 g (0.25 mol) of diphenyldimethoxysilane, (0.25 mol) of trimethoxysilane and 196 g of toluene were mixed. Then, 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The aqueous layer was removed, and the low-boiling substance was removed from the obtained transparent solution by heating under reduced pressure to obtain 151 g (yield: 98%) of organopolysiloxane (P-20).

<합성예 21>&Lt; Synthesis Example 21 &

반응용기에, 1,1,3,3-테트라메틸디실록산 40.03g(0.30mol), 비페닐릴메틸디메톡시실란 77.52g(0.30mol), 디페닐디메톡시실란 61.09g(0.25mol), 디메틸디메톡시실란 30.06g(0.25mol) 및 톨루엔 209g을 혼합한 후, 물 28.83g(1.60mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-21) 169g(수율: 98%)을 얻었다.(0.30 mol) of 1,1,3,3-tetramethyldisiloxane, 77.52 g (0.30 mol) of biphenylmethyldimethoxysilane, 61.09 g (0.25 mol) of diphenyldimethoxysilane, (0.25 mol) of trimethoxysilane and 209 g of toluene were mixed. Then, 28.83 g (1.60 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed, and the low-boiling substance was removed from the resulting transparent solution by heating under reduced pressure to obtain 169 g (yield: 98%) of organopolysiloxane (P-21).

<합성예 22>&Lt; Synthesis Example 22 >

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴메틸디메톡시실란 25.84g(0.10mol), 디페닐디메톡시실란 97.75g(0.40mol), 디메틸디메톡시실란 48.09g(0.40mol) 및 톨루엔 185g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-22) 141g(수율: 98%)을 얻었다.(0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 25.84 g (0.10 mol) of biphenylmethyldimethoxysilane, 97.75 g (0.40 mol) of diphenyldimethoxysilane, (0.40 mol) of trimethoxysilane and 185 g of toluene were mixed. Then, 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed, and the low-boiling substance was removed from the resulting transparent solution by heating under reduced pressure to obtain 141 g (yield: 98%) of organopolysiloxane (P-22).

<합성예 23>&Lt; Synthesis Example 23 >

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴메틸디메톡시실란 180.87g(0.70mol), 디페닐디메톡시실란 36.66g(0.15mol), 디메틸디메톡시실란 18.03g(0.15mol) 및 톨루엔 249g을 혼합한 후, 물 36.04g(2.00mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-23) 199g(수율: 98%)을 얻었다.To the reaction vessel, 13.43 g (0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 180.87 g (0.70 mol) of biphenylmethyldimethoxysilane, 36.66 g (0.15 mol) After mixing 18.03 g (0.15 mol) of dimethoxysilane and 249 g of toluene, 36.04 g (2.00 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed, and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 199 g of an organopolysiloxane (P-23) (yield: 98%).

<합성예 24>&Lt; Synthesis Example 24 &

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴페닐디메톡시실란 32.05g(0.10mol), 디페닐디메톡시실란 97.75g(0.40mol), 디메틸디메톡시실란 48.09g(0.40mol) 및 톨루엔 191g을 혼합한 후, 물 32.44g(1.80mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-24) 147g(수율: 98%)을 얻었다.(0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 32.05 g (0.10 mol) of biphenylphenyldimethoxysilane, 97.75 g (0.40 mol) of diphenyldimethoxysilane, (0.40 mol) of trimethoxysilane and 191 g of toluene were mixed. Then, 32.44 g (1.80 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed and the low-boiling substance was removed from the resulting transparent solution by heating under reduced pressure to obtain 147 g (yield: 98%) of organopolysiloxane (P-24).

<합성예 25>&Lt; Synthesis Example 25 >

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 비페닐릴페닐디메톡시실란 224.32g(0.70mol), 디페닐디메톡시실란 36.66g(0.15mol), 디메틸디메톡시실란 18.03g(0.15mol) 및 톨루엔 292g을 혼합한 후, 물 36.04g(2.00mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-25) 241g(수율: 98%)을 얻었다.To the reaction vessel, 13.43 g (0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 224.32 g (0.70 mol) of biphenylsilylphenyldimethoxysilane, 36.66 g (0.15 mol) of diphenyldimethoxysilane, After mixing 18.03 g (0.15 mol) of dimethoxysilane and 292 g of toluene, 36.04 g (2.00 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 241 g of an organopolysiloxane (P-25) (yield: 98%).

<합성예 26>&Lt; Synthesis Example 26 &

반응용기에, 1,1,3,3-테트라메틸디실록산 33.58g(0.25mol), 비페닐릴페닐디메톡시실란 192.27g(0.60mol), 디페닐디메톡시실란 18.33g(0.075mol), 디메틸디메톡시실란 9.02g(0.075mol) 및 톨루엔 216g을 혼합한 후, 물 27.03g(1.50mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-26) 178g(수율: 98%)을 얻었다.To the reaction vessel were added 33.58 g (0.25 mol) of 1,1,3,3-tetramethyldisiloxane, 192.27 g (0.60 mol) of biphenylphenyldimethoxysilane, 18.33 g (0.075 mol) of diphenyldimethoxysilane, (0.075 mol) of trimethoxysilane and 216 g of toluene were mixed. Then, 27.03 g (1.50 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed, and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 178 g of an organopolysiloxane (P-26) (yield: 98%).

<합성예 27>&Lt; Synthesis Example 27 >

반응용기에, 1,1,3,3-테트라메틸디실록산 6.72g(0.05mol), 비페닐릴페닐디메톡시실란 64.09g(0.20mol), 디페닐디메톡시실란 18.33g(0.075mol), 디메틸디메톡시실란 90.17g(0.75mol) 및 톨루엔 149g을 혼합한 후, 물 34.24g(1.90mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-27) 103g(수율: 98%)을 얻었다.To the reaction vessel were added 6.72 g (0.05 mol) of 1,1,3,3-tetramethyldisiloxane, 64.09 g (0.20 mol) of biphenylsilylphenyldimethoxysilane, 18.33 g (0.075 mol) of diphenyldimethoxysilane, (0.75 mol) of trimethoxysilane and 149 g of toluene were mixed. Then, 34.24 g (1.90 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and heated under reflux for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed, and the low boiling point product was removed from the obtained transparent solution by heating under reduced pressure to obtain 103 g (yield: 98%) of organopolysiloxane (P-27).

<합성예 28>&Lt; Synthesis Example 28 >

반응용기에, 1,1,3,3-테트라메틸디실록산 13.43g(0.10mol), 디페닐디메톡시실란 109.97g(0.45mol), 디메틸디메톡시실란 54.10g(0.45mol) 및 톨루엔 177g을 혼합한 후, 물 34.24g(1.90mol), 트리플루오로메탄설폰산 0.75g(5mmol)을 투입하고, 1시간 가열환류를 행하였다. 반응온도가 120℃가 될 때까지 가열상압유거를 행하고, 이 온도에서 6시간 반응시켰다. 실온까지 냉각하고, 물을 첨가하여 교반하였다. 수층을 빼내고, 얻어진 투명한 용액으로부터 저비점물을 가열감압제거하여, 오가노폴리실록산(P-28) 133g(수율: 98%)을 얻었다.13.43 g (0.10 mol) of 1,1,3,3-tetramethyldisiloxane, 109.97 g (0.45 mol) of diphenyldimethoxysilane, 54.10 g (0.45 mol) of dimethyldimethoxysilane and 177 g of toluene were mixed in a reaction vessel Then, 34.24 g (1.90 mol) of water and 0.75 g (5 mmol) of trifluoromethanesulfonic acid were added and refluxed for 1 hour. The reaction was heated at normal pressure until the reaction temperature became 120 캜, and the reaction was carried out at this temperature for 6 hours. The mixture was cooled to room temperature, water was added, and the mixture was stirred. The water layer was removed, and the low boiling point product was removed from the resulting transparent solution by heating under reduced pressure to obtain 133 g (yield: 98%) of organopolysiloxane (P-28).

<실시예 1>&Lt; Example 1 >

(A)성분인 오가노폴리실록산P-1(10g), (B)성분인 오가노폴리실록산P-15(10g)와 (C)성분인 1,3-디비닐-1,1,3,3-테트라메틸디실록산 착체(조성물 전체에 대하여 백금금속이 중량단위로 10ppm이 되는 양)를 혼합하여, LED용 봉지재 조성물을 얻었다.(10 g) of the organopolysiloxane P-1 as the component (A), the organopolysiloxane P-15 (10 g) as the component (B) and the 1,3-divinyl-1,1,3,3- A tetramethyldisiloxane complex (an amount such that the platinum metal was 10 ppm by weight based on the entire composition) was mixed to obtain an encapsulant composition for LED.

<실시예 2>&Lt; Example 2 >

(A)성분인 오가노폴리실록산P-2(10g), (B)성분인 오가노폴리실록산P-16(10g)과 (C)성분인 1,3-디비닐-1,1,3,3-테트라메틸디실록산 착체(조성물 전체에 대하여 백금금속이 중량단위로 10ppm이 되는 양)를 혼합하여, LED용 봉지재 조성물을 얻었다.(10 g) of organopolysiloxane P-2 as component (A), 10 g of organopolysiloxane P-16 as component (B) and 1, 3-divinyl-1,1,3,3- A tetramethyldisiloxane complex (an amount such that the platinum metal was 10 ppm by weight based on the entire composition) was mixed to obtain an encapsulant composition for LED.

<실시예 3>&Lt; Example 3 >

(A)성분인 오가노폴리실록산P-3(10g), (B)성분인 오가노폴리실록산P-17(10g)과 (C)성분인 1,3-디비닐-1,1,3,3-테트라메틸디실록산 착체(조성물 전체에 대하여 백금금속이 중량단위로 10ppm이 되는 양)를 혼합하여, LED용 봉지재 조성물을 얻었다.(10 g) of organopolysiloxane P-3 as component (A), 10 g of organopolysiloxane P-17 as component (B) and 1, 3-divinyl-1,1,3,3- A tetramethyldisiloxane complex (an amount such that the platinum metal was 10 ppm by weight based on the entire composition) was mixed to obtain an encapsulant composition for LED.

<실시예 4><Example 4>

(A)성분인 오가노폴리실록산P-4(10g), (B)성분인 오가노폴리실록산P-18(10g)과 (C)성분인 1,3-디비닐-1,1,3,3-테트라메틸디실록산 착체(조성물 전체에 대하여 백금금속이 중량단위로 10ppm이 되는 양)를 혼합하여, LED용 봉지재 조성물을 얻었다.(10 g) of the organopolysiloxane P-4 as the component (A), 10 g of the organopolysiloxane P-18 as the component (B) and 1, 3-divinyl- A tetramethyldisiloxane complex (an amount such that the platinum metal was 10 ppm by weight based on the entire composition) was mixed to obtain an encapsulant composition for LED.

<실시예 5>&Lt; Example 5 >

(A)성분인 오가노폴리실록산P-5(10g), (B)성분인 오가노폴리실록산P-19(10g)와 (C)성분인 1,3-디비닐-1,1,3,3-테트라메틸디실록산 착체(조성물 전체에 대하여 백금금속이 중량단위로 10ppm이 되는 양)를 혼합하여, LED용 봉지재 조성물을 얻었다.(10 g) of organopolysiloxane P-5 as component (A), 10 g of organopolysiloxane P-19 as component (B) and 1, 3-divinyl-1,1,3,3- A tetramethyldisiloxane complex (an amount such that the platinum metal was 10 ppm by weight based on the entire composition) was mixed to obtain an encapsulant composition for LED.

<실시예 6>&Lt; Example 6 >

(A)성분인 오가노폴리실록산P-1(10g), (B)성분인 오가노폴리실록산P-28(10g)과 (C)성분인 1,3-디비닐-1,1,3,3-테트라메틸디실록산 착체(조성물 전체에 대하여 백금금속이 중량단위로 10ppm이 되는 양)를 혼합하여, LED용 봉지재 조성물을 얻었다.10 g of organopolysiloxane P-1 as component (A), 10 g of organopolysiloxane P-28 as component (B) and 1, 3-divinyl-1,1,3,3- A tetramethyldisiloxane complex (an amount such that the platinum metal was 10 ppm by weight based on the entire composition) was mixed to obtain an encapsulant composition for LED.

<실시예 7>&Lt; Example 7 >

(A)성분인 오가노폴리실록산P-14(10g), (B)성분인 오가노폴리실록산P-15(10g)와 (C)성분인 1,3-디비닐-1,1,3,3-테트라메틸디실록산 착체(조성물 전체에 대하여 백금금속이 중량단위로 10ppm이 되는 양)를 혼합하여, LED용 봉지재 조성물을 얻었다.(10 g) of organopolysiloxane P-14 as component (A), 10 g of organopolysiloxane P-15 as component (B) and 1, 3-divinyl-1,1,3,3- A tetramethyldisiloxane complex (an amount such that the platinum metal was 10 ppm by weight based on the entire composition) was mixed to obtain an encapsulant composition for LED.

<비교예 1>&Lt; Comparative Example 1 &

(A)성분인 오가노폴리실록산P-14(10g), (B)성분인 오가노폴리실록산P-28(10g)과 (C)성분인 1,3-디비닐-1,1,3,3-테트라메틸디실록산 착체(조성물 전체에 대하여 백금금속이 중량단위로 10ppm이 되는 양)를 혼합하여, 조성물을 얻었다.10 g of organopolysiloxane P-14 as component (A), 10 g of organopolysiloxane P-28 as component (B) and 1, 3-divinyl-1,1,3,3- And a tetramethyldisiloxane complex (amount in which platinum metal is 10 ppm by weight based on the total composition) were mixed to obtain a composition.

결과를 표 1과 표 2에 나타낸다.The results are shown in Tables 1 and 2.

[표 1][Table 1]

Figure pct00001
Figure pct00001

[표 2][Table 2]

Figure pct00002
Figure pct00002

표 1에 나타낸 바와 같이, 실시예 1로부터 실시예 7에서 조제한 LED용 봉지재 조성물로부터 얻어진 경화물은, 모두 내열투명성이 있으며, 황화내성이 높고 은기판의 변색은 보이지 않았다. 또한, LED기판에 대한 높은 밀착성을 나타냈다.As shown in Table 1, all of the cured products obtained from the sealing compositions for LEDs prepared in Examples 1 to 7 had heat resistance and transparency, showed high resistance to sulfurization, and showed no discoloration of the silver substrate. In addition, high adhesion to the LED substrate was exhibited.

한편, 표 2에 나타낸 바와 같이, 비교예 1에서 조제한 조성물로부터 얻어진 경화물은, 내열투명성, 황화내성, 밀착성을 모두 만족시킬 수 있는 것은 아니었다.On the other hand, as shown in Table 2, the cured product obtained from the composition prepared in Comparative Example 1 did not satisfy all of heat resistance transparency, sulphide resistance and adhesion.

구체적으로는, 비페닐릴기를 함유하지 않는 폴리오가노실록산을 사용한 비교예 9에서는, 황화내성이 불충분하였다. 따라서 LED용 봉지재 조성물로서 사용할 수 없다고 판단하였다.Specifically, in Comparative Example 9 using a polyorganosiloxane containing no biphenylyl group, the sulfide resistance was insufficient. Therefore, it was judged that it could not be used as a sealant composition for LED.

이상의 결과로부터, 본 발명의 LED용 봉지재 조성물은, 내열투명성이 있으며, 황화내성이 높기 때문에 LED기판의 은도금전극을 부식시키는 일도 없고, LED기판에 대한 높은 밀착성을 나타내는 것을 알 수 있으며, LED장치에 있어서의 LED소자의 봉지재로서 호적한 것을 알 수 있었다.From the above results, it can be seen that the encapsulating composition for LED of the present invention has high heat resistance and high sulfidation resistance, so that it does not corrode the silver plating electrode of the LED substrate and exhibits high adhesiveness to the LED substrate. As an encapsulant of the LED element in the light emitting diode.

산업상 이용가능성Industrial availability

본 발명의 LED용 봉지재 조성물은, 내열투명성이 있으며, 황화내성이 높기 때문에, LED기판의 은도금전극을 부식시키는 일도 없고, LED기판에 대한 높은 밀착성을 나타내는 점에서, LED장치에 있어서의 LED소자의 봉지재, 혹은 액정단부의 은전극이나 기판의 은도금의 보호제로서 호적하다.INDUSTRIAL APPLICABILITY The encapsulating composition for LED of the present invention has heat resistance transparency and high sulfidation resistance so that it does not corrode the silver plating electrode of the LED substrate and exhibits high adhesion to the LED substrate, Or as a protective agent for the silver electrode of the liquid crystal end portion or the silver plating of the substrate.

Claims (6)

(A)하기 식(1)로 표시되는 3종의 구조단위를 갖고, 규소원자와 결합한 알케닐기를 1분자 중에 적어도 2개 갖는 직쇄상의 오가노폴리실록산,
(R1R2R3SiO1/2)a(R4R5SiO2/2)b(R6 2SiO2/2)c (1)
(식 중, R1은 탄소원자수 2~12의 알케닐기를 나타내고, R2는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R3은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R4는 탄소원자수 6~20의 아릴기 또는 비페닐릴기를 나타내고, R5는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, 2개의 R6은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, a, b 및 c는, 각각, 0.01≤a≤0.5, 0.01≤b≤0.7, 0.1≤c≤0.9, 또한 a+b+c=1을 만족시키는 수이다.)
(B)하기 식(2)로 표시되는 3종의 구조단위를 갖고, 규소원자와 결합한 수소원자를 1분자 중에 적어도 2개 갖는 직쇄상의 오가노폴리실록산
(R7R8R9SiO1/2)d(R10R11SiO2/2)e(R12 2SiO2/2)f (2)
(식 중, R7은 수소원자를 나타내고, R8은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R9는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, R10은 탄소원자수 6~20의 아릴기 또는 비페닐릴기를 나타내고, R11은 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, 2개의 R12는 탄소원자수 6~20의 아릴기 또는 탄소원자수 1~12의 알킬기를 나타내고, d, e 및 f는, 각각, 0.01≤d≤0.5, 0.01≤e≤0.7, 0.1≤f≤0.9, 또한 d+e+f=1을 만족시키는 수이다.)

(C)하이드로실릴화반응촉매
를 포함하고, 상기 식(1) 중의 R4 및 상기 식(2) 중의 R10의 적어도 일방은 비페닐릴기를 나타내는, LED용 봉지재 조성물.
(A) a linear organopolysiloxane having three kinds of structural units represented by the following formula (1) and having at least two alkenyl groups bonded to silicon atoms in one molecule,
(R 1 R 2 R 3 SiO 1/2 ) a (R 4 R 5 SiO 2/2 ) b (R 6 2 SiO 2/2 ) c (1)
(Wherein R 1 represents an alkenyl group having 2 to 12 carbon atoms, R 2 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, and R 3 represents an aryl group having 6 to 20 carbon atoms group or a carbon atom represents a group of atoms from 1 to 12, R 4 represents an aryl group or a biphenylyl of carbon atoms from 6 to 20, R 5 is an alkyl group of carbon atoms from 6 to 20 aryl group or a carbon atom number of 1 to 12 of the represents, two R 6 represents an alkyl group of carbon atoms from 6 to 20 carbon atoms or aryl group of 1 to 12, a, b and c are, respectively, 0.01≤a≤0.5, 0.01≤b≤0.7, 0.1≤c Lt; = 0.9, and a + b + c = 1.)
(B) a linear organopolysiloxane having three kinds of structural units represented by the following formula (2) and having at least two hydrogen atoms bonded to silicon atoms in one molecule
(R 7 R 8 R 9 SiO 1/2 ) d (R 10 R 11 SiO 2/2 ) e (R 12 2 SiO 2/2 ) f (2)
(Wherein R 7 represents a hydrogen atom, R 8 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms, R 9 represents an aryl group having 6 to 20 carbon atoms, R 11 represents an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms and R 12 represents an alkyl group having 1 to 12 carbon atoms; R 10 represents an aryl group or a biphenyl group having 6 to 20 carbon atoms; R 11 denotes an aryl group having 6 to 20 carbon atoms or an alkyl group having 1 to 12 carbon atoms; D, e and f each represent an integer of 0.01? D? 0.5, 0.01? E? 0.7, 0.1? F? 0.9, and d + e + f = 1.)
And
(C) hydrosilylation reaction catalyst
, Wherein at least one of R 4 in the formula (1) and R 10 in the formula (2) represents a biphenylyl group.
제1항에 있어서,
상기 식(1) 중의 R4는 페닐기 또는 비페닐릴기를 나타내는, LED용 봉지재 조성물.
The method according to claim 1,
Wherein R 4 in the formula (1) represents a phenyl group or a biphenylyl group.
제1항 또는 제2항에 있어서,
상기 식(2) 중의 R10은 페닐기 또는 비페닐릴기를 나타내는, LED용 봉지재 조성물.
3. The method according to claim 1 or 2,
Wherein R 10 in the formula (2) represents a phenyl group or a biphenylyl group.
제1항 내지 제3항 중 어느 한 항에 있어서,
추가로 (D)접착부여제를 포함하는, LED용 봉지재 조성물.
4. The method according to any one of claims 1 to 3,
Further comprising (D) an adhesion-imparting agent.
제1항 내지 제4항 중 어느 한 항에 기재된 LED용 봉지재 조성물로부터 얻어지는 경화물.A cured product obtained from the encapsulating material composition for LED according to any one of claims 1 to 4. 제5항에 기재된 경화물에 의해 LED소자가 봉지된 LED장치.An LED device sealed with an LED element by the cured product of claim 5.
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