KR20190057468A - Initiated chemical vapor deposition system having sub­chamber and the method thereof - Google Patents

Abstract

The present invention relates to an initiated chemical vapor deposition (iCVD) system using an initiator and a method thereof, wherein the iCVD system comprises: a mixing area mixing a gaseous monomer and an initiator; a sub-chamber uniformizing distribution of the mixed monomer and initiator; and an iCVD chamber polymerizing a polymer. Therefore, compared to a conventional process, an iCVD process can be performed for uniform adsorption on a substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to an iCVD system and a subchamber,

The present invention relates to an initiated chemical vapor deposition (iCVD) system and a method thereof, and more particularly to a system and method for uniformly distributing monomers and initiators mixed through a mixed region. The present invention relates to a system and a method for polymerizing a polymer using a subchamber.

In recent years, a variety of polymer thin films have been deposited and used in flexible displays as well as in organic light emitting diodes (OLEDs), which have recently gained popularity as next generation displays. Particularly, devices using organic materials including OLEDs are very vulnerable to atmospheric gases, particularly moisture or oxygen, and have a poor durability against heat, requiring a thorough sealing process.

If an appropriate sealing process is not accompanied, the lifetime of the device is rapidly lowered, and a dark spot is formed in the device, leading to defects of the product. On the contrary, when an appropriate sealing process is applied in the device fabrication process, reliability of the device can be ensured and high quality devices can be produced.

Generally, the sealing process is divided into two types.

One is a cover method in which a getter is attached to a cover made of glass or metal and then attached to the device using an adhesive having low permeability. The other is a thin film method in which a plurality of kinds of films are laminated and adhered to an OLED element or a film is directly deposited on an OLED element.

It is of excellent oxygen barrier film used in the thin film method and the material having vapor barrier properties (SiO _x, SiN _x, SiO _x N _y, and Al _x O _y) are mainly used, and chemical vapor deposition for deposition (Chemical Vapor Deposition; CVD, Plasma Enhanced Chemical Vapor Deposition (PECVD), Atom Layer Deposition (ALD), and the like are used.

In recent years, initiated chemical vapor deposition (iCVD) using an initiator, which is one of chemical vapor deposition methods, has attracted attention.

The iCVD process utilizes a chain polymerization using free radicals known as a liquid phase process. By vaporizing an initiator and a monomer to cause a polymer reaction in a gas phase, the polymer thin film is transferred to a substrate Is deposited on the surface. When the initiator and the monomer are simply mixed, the polymerization reaction does not occur. However, when the initiator is decomposed by the high temperature filament located in the gas phase reactor, radicals are generated, and the monomer is activated thereby to perform a chain polymerization reaction.

The chemical vapor deposition method (iCVD) using an initiator can generate a thin film having a higher purity than a polymer synthesis method using a conventional liquid phase process because it reacts using only monomers and radicals without an organic solvent or other additives.

However, the conventional iCVD process is a process in which the monomer and the initiator are immediately introduced into the chamber immediately after the vaporization, and there is a problem that the substrate is not uniformly adsorbed to the substrate when it is not fully vaporized. In the conventional iCVD process, there is a limitation in the deposition of monomers having a low vapor pressure. In the case of copolymerization in which two or more monomers are used, the monomers are introduced into the iCVD chamber without being completely mixed, There is a limitation that a polymer thin film having a uniform composition can not be formed.

Korean Patent Publication No. 1020170038288 (published on Apr. 07, 2017), "

It is an object of the present invention to provide a more uniform iCVD system that includes a sub-chamber that improves thin film productivity through a mixed region that induces complete vaporization of monomers and initiators and uniformizes its distribution through mixing of monomer and initiator, RTI ID = 0.0 > iCVD < / RTI >

In a chemical vapor deposition system (Initiated Chemical Vapor Deposition (iCVD) using an initiator according to an embodiment of the present invention, a mixed region in which gaseous monomers and the initiator are mixed, And an iCVD chamber for polymerizing the polymer using the monomer and the initiator injected from the sub-chamber.

Wherein the mixed region comprises a monomer inlet port for injecting the monomer, an initiator inlet port for injecting the initiator, a mixing portion for mixing the monomer and the initiator, and a mixing portion for mixing the mixed monomer and the initiator into the sub- And an outlet port for introducing the refrigerant.

The mixing portion may be formed of a screw plate for preventing backflow, and the monomer inlet port and the monomer injected from the initiator inlet port and the initiator may be mixed.

The sub-chamber is formed as the three-dimensional space, and the mixed monomer and the initiator injected from the mixed region can be distributed in the space and made uniform.

The subchamber may be capable of classifying defective monomers or initiators among the mixed monomers and initiators.

The space may be characterized by being heated to prevent adsorption of the mixed monomer and the initiator.

The iCVD chamber may include a precursor injection unit for injecting the monomer and the initiator, and a temperature control unit for controlling the temperature to form a thin film on the substrate using the precursor.

The precursor injecting unit may be a single or a plurality of precursor injecting units, and may inject different precursors depending on the type of the substrate to be accommodated.

The temperature controller may include a heating unit for pyrolyzing the initiator to form free radicals and a cooling unit for lowering the temperature of the substrate to adsorb the free radicals.

A method of operating an Initiated Chemical Vapor Deposition (iCVD) using an initiator according to an embodiment of the present invention includes mixing a gaseous monomer and the initiator, mixing the mixed monomer And homogenizing the distribution of the initiator, and polymerizing the polymer using the monomer and the initiator.

The step of mixing the monomer and the initiator may include mixing the monomers injected from the monomer inlet port and the initiator inlet port into the mixing zone and the initiator into the interior of the subchamber.

The step of homogenizing the distribution of the mixed monomer and the initiator can be performed by distributing the mixed monomer and the initiator in the space in the sub-chamber formed in the three-dimensional space.

The step of homogenizing the distribution of the mixed monomers and the initiator can classify the monomer or initiator which is defective among the mixed monomers and the initiator.

The step of polymerizing the polymer may be performed by heating the monomer and the initiator to form a free radical, activating the monomer using the free radical, cooling to form a thin film on the substrate Process.

According to an embodiment of the present invention, there is provided a sub-chamber including a sub-chamber that improves thin film productivity through a mixed region that induces complete vaporization of a monomer and an initiator, and uniformizes the distribution thereof through mixing of a monomer and an initiator A uniform iCVD process can be performed.

Further, according to the embodiment of the present invention, homogenized monomers and initiators can be injected into a plurality of iCVD chambers using a single mixed region and a single sub-chamber.

Further, according to the embodiment of the present invention, it is possible to deposit a thin film on more substrates using a stacked multi-iCVD chamber, and to deposit various kinds of thin films in a limited time.

1 is a view for explaining chemical vapor deposition using an initiator.
2 is a block diagram of an iCVD system according to an embodiment of the present invention.
FIG. 3 shows a detailed configuration of a mixed region according to an embodiment of the present invention.
4 illustrates a detailed configuration of a subchamber according to an embodiment of the present invention.
5 illustrates a detailed configuration of an iCVD chamber according to an embodiment of the present invention.
6 is a block diagram of an iCVD system according to another embodiment of the present invention.
Figure 7 illustrates a three-dimensional view of an iCVD chamber in accordance with another embodiment of the present invention.
8 shows a flow chart of an iCVD method according to an embodiment of the present invention.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. In addition, the same reference numerals shown in the drawings denote the same members.

Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the viewer, the intention of the operator, or the custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification.

The present invention relates to a chemical vapor deposition method using an initiator, and is a method designed to apply to the production of an organic polymer thin film by modifying and applying a chemical vapor deposition (CVD) method.

The thin film deposition process is largely divided into a physical vapor deposition (PVD) process and a chemical vapor deposition (CVD) process.

The PVD process is a deposition technique that does not involve a chemical reaction. It is mainly used for metal thin film deposition, and includes vacuum evaporation and sputtering. On the other hand, CVD processes have been used for the deposition of inorganic materials because they must be carried out under harsh conditions with deposition techniques involving chemical reactions.

At this time, all of the CVD processes are carried out through a combined process in the reactor, and fluid flow and mass transfer in the reactor act in a complex manner to determine the characteristics of the thin film. Therefore, the chemical reaction characteristics of the material to be supplied and the structure of the reactor can serve as important parameters for thin film formation.

Therefore, the present invention can deposit a desired polymer thin film as a monomer and an initiator in a gas phase without using a vapor deposition process, a solvent, particularly an organic solvent, and therefore, even if a substrate is included in a lower portion, Can be minimized.

1 is a view for explaining chemical vapor deposition using an initiator.

Referring to FIG. 1, I is an initiator, M is a monomer, R is free radical, and P is a free radical (R) -activated monomer M). ≪ / RTI > More specifically, the free radical (R) is formed by pyrolysis of the initiator (I), the free radical (R) activates the monomer (M) and then induces the polymerization of the surrounding monomers, Thereby forming a polymer thin film.

At this time, only the heat applied from the gas-phase reactor filament is sufficient for the temperature used in the reaction for free radicalization of the initiator (I). Therefore, the processes used in the embodiment of the present invention can be sufficiently performed even at low power. In addition, since the reaction pressure in the gas phase reactor is in the range of 50 to 2000 mTorr, a strict high vacuum condition is not required, so that the process can be performed by a simple rotary pump instead of a high vacuum pump.

In addition, the physical properties of the polymer thin film obtained through the process can be easily controlled by controlling the process parameters of the chemical vapor deposition (iCVD) using the initiator (I). That is, by adjusting the process pressure, time, temperature, flow rate of the initiator (I) and the monomer (M), the filament temperature and the like as desired, the molecular weight of the polymer thin film, the thickness, composition, And the like.

In the embodiment of the present invention, the term "initiator (I)" is not limited as long as it is a substance capable of decomposing by the supply of heat in the reactor to form a free radical (R) and activating the monomer (M). Preferably, the initiator may be a peroxide, for example TBPO (tertbutyl peroxide). At this time, TBPO is a volatile substance having a boiling point of about 110 캜, which is pyrolyzed at about 150 캜.

On the other hand, the amount of the initiator moiety can be added in an amount known in the art in an amount required for a conventional polymerization reaction, and may be, for example, 0.5 to 5 mol%, but is not limited to the above range, Or can be written down.

In the embodiment of the present invention, 'monomer (M)' is a substance which is volatile in chemical vapor deposition and can be activated by initiator (I). It may be vaporized or sublimed under reduced pressure and elevated temperature, for example, glycidyl methacrylate (GMA).

As an example, the present invention can maintain a high temperature filament in a reactor at 150 to 300 캜 to induce a gaseous reaction. The temperature of the filament is sufficiently high at the time of thermal decomposition of TBPO, but most of organic matters including other monomers are not pyrolyzed, so that various kinds of monomers can be converted into a polymer thin film without chemical damage. At this time, the polymer thin film according to an embodiment of the present invention may be polyglycidyl methacrylate (PGMA).

2 is a block diagram of an iCVD system according to an embodiment of the present invention.

Referring to FIG. 2, an iCVD system according to an embodiment of the present invention polymerizes a polymer by uniformizing the distribution of mixed monomers and initiators.

Accordingly, the iCVD system 200 according to the embodiment of the present invention includes the mixing region 300, the subchamber 400, and the iCVD chamber 500.

The mixed region 300 is formed by injecting a monomer monomer 20 injected through an inlet port and an initiator 10 into a sub chamber 400, Chamber 10 is uniformly distributed to the iCVD chamber 500 through a connecting line 420 connecting the sub-chamber 400 and the iCVD chamber 500. The monomer (20) and the initiator (10) 20 and an initiator 10 are injected. Accordingly, the iCVD chamber 500 polymerizes the polymer using the monomer 20 and the initiator 10 to be injected.

Referring to FIG. 2, the mixed region 400 is inserted into an arbitrary hole formed in one side of the three-dimensional space of the sub-chamber 400, but forms such as injection, connection, And it is irrelevant that the mixed monomer 20 and the initiator 10 in the mixing region 400 are injected into the sub-chamber 400. For example, the outlet port (OUTLET PORT) of the mixing region 400 may be in the form of being injected into the sub-chamber 400 through the hole.

The subchamber 400 is in the form of a three-dimensional space and can be formed so that the gaseous monomer 20 and the initiator 10 are uniformly distributed.

The iCVD chamber 500 includes a substrate, a heating unit, a cooling unit, and the like. The polymer can be polymerized using the monomer 20 and the initiator 10 injected from the sub-chamber 400. At this time, the connection line 420 connecting the sub-chamber 400 and the iCVD chamber 500 may be in the form of a connection path and may be formed in each of the sub-chambers 400 and the side facing the i-CVD chamber 500 . Depending on the embodiment, the connecting line 420 is not limited to the upper, lower, left, right, or central positions of the side, and it is understood that the number, size, and shape are not limited as well as the position.

Although a single mixed region 300, a single sub-chamber 400, and a single iCVD chamber 500 are shown in FIG. 2, according to an embodiment to which the iCVD system 200 according to an embodiment of the present invention is applied, And the size and height of the sub-chamber 400 and the i-CVD chamber 500 are not limited thereto.

Hereinafter, the mixing region 300, the sub-chamber 400, and the i-CVD chamber 500 will be described in more detail with reference to FIGS.

FIG. 3 shows a detailed configuration of a mixed region according to an embodiment of the present invention.

The mixing region 300 according to an embodiment of the present invention includes inlet ports 321 and 322 included in the cylindrical body 310, a mixing portion 330, an outlet port 340, and an outlet port 350 ), And the gaseous monomer and the initiator are mixed.

3, the mixing zone 300 includes inlet ports 321 and 322 for feeding the initiator 10 and the monomer 20 into the interior of the cylindrical body 310, 310 may include an initiator inlet port 321 for injecting the initiator 10 and a monomer inlet port 322 for injecting the monomer 20. [

The mixing zone 300 also includes an initiator 10 injected into the cylindrical body 310 through the initiator inlet port 321 and a monomer inlet port 322 and a mixing section for uniformly mixing the monomer 20 And the mixing portion 330 may be formed of a screw plate for preventing the backflow of the initiator 10, the monomer 20, the precursor or the radical. For example, when the radicals flow backward, the source monomer in a liquid form may be polymerized to make it difficult to introduce the monomer and the initiator into the sub-chamber 400. Therefore, the mixing unit 330 may include a screw plate . Further, the mixing portion 330 may not only prevent the backflow by the screw plate but also vaporize the monomer having a low vapor pressure, promote the vaporization of the monomer and the initiator to improve the flow rate, thereby improving the productivity of the thin film .

The mixed monomer and the initiator in the mixing portion 330 are injected into an external subchamber 400 through an outlet port 350 coupled to the outlet 340. At this time, the outlet port 350 may be in the form of being inserted, connected, or attached to any side of the sub-chamber 400, and the mixed monomer and the initiator may be injected into the sub-chamber 400 through the mixing portion 330 .

4 illustrates a detailed configuration of a subchamber according to an embodiment of the present invention.

The sub-chamber 400 according to an embodiment of the present invention is formed in a three-dimensional space 410 and distributes and homogenizes the monomer 20 and the initiator 10 injected from the mixing region 300.

The sub-chamber 400 can classify the defective monomer or initiator through homogenization of the monomer 20 and the initiator 10. [ For example, the sub-chamber 400 distributes and homogenizes the monomer 20 and the initiator 10 in the three-dimensional space 410 to form a non-fully vaporized monomer or initiator, a high-mass monomer or initiator, Defective monomers such as monomers or initiators can be classified.

2 and 4, the space 410 is shown in the form of a three-dimensional box (box). However, the space 410 may be a three-dimensional cylindrical shape, a circular shape, a rectangular shape, a square shape, , ≪ / RTI >

The walls of the space 410 may be in the form of an inner wall and an outer wall and may be heated to prevent adsorption of the injected monomer 20 and the initiator 10 from the mixed region 300 . Further, due to the heating process of the inner wall, the inside of the space 410 can be heated to a constant temperature.

4, the subchamber 400 may include a connection line 420 connecting the subchamber 400 and the iCVD chamber 500. The connection line 420 may include a subchamber 400 and an iCVD And may be formed on each of the sides facing the chamber 500. Depending on the embodiment, the connecting line 420 is not limited to the upper, lower, left, right, or central positions of the side, and it is understood that the number, size, and shape are not limited as well as the position.

For example, the connection lines 420 may be arranged in a line or zigzag shape on any side of the three-dimensional space 410, and may be formed in a plurality of lines. Also, the connection line 420 may be in the form of a cylinder, a hole, a line, or the like.

5 illustrates a detailed configuration of an iCVD chamber according to an embodiment of the present invention.

The iCVD chamber 500 according to the embodiment of the present invention may include a precursor injection unit 510, a heating unit 520, a substrate 530, a cooling unit 540 and an exhaust port 550.

The iCVD chamber 500 is a space in which an initiator 10 is thermally decomposed and a monomer is polymerized to form a thin film on the substrate 530.

In this case, the substrate 530 may include a flexible substrate, a glass substrate, and the like. The flexible substrate may be formed of a material selected from the group consisting of polyethylene terephthalate (PET), poly methyl methacrylate methyl methacrylate (PMMA), polycarbonate (PC), polyethylenesulfone (PES), and the like.

The substrate 530 may include an organic electroluminescent device. The organic electroluminescent device may be an organic electroluminescent device (OLED), an organic solar cell Organic Photovoltaics (OPVs), Organic Thin Film Transistors (OTFTs), and the like, but the type of the substrate 530 is not limited thereto.

The precursor injector 510 may inject the precursor of the monomer 20 and the initiator 10 into the iCVD chamber 500. 5, the precursor injection unit 510 injects the mixed monomer 20 and the initiator 10 injected from the sub-chamber 400, and injects the monomer into the monomer injection unit (not shown) and the initiator injection unit , The monomer 20 and the initiator 10 may be separately injected.

The initiator (10) is a substance that induces the activation of the first reaction so that the monomers (20) can form a polymer in the process of the present invention. Initiator 10 may be a material that is pyrolyzed at a temperature below the temperature at which monomer 20 is pyrolyzed to form free radical 30. Initiator 10 is injected into iCVD chamber 500 and pyrolyzed by heating section 520 to form free radical 30. Table 1 below shows an example of initiators 10 that can be used in embodiments of the present invention.

[Table 1]

Referring to Table 1, the initiator 10 may be a peroxide and may be tertbutylperoxide (TBPO) or benzophenone, but the initiator 10, which can be used in the present invention as the material, The kind is not limited. Further, the monomer 20 and the initiator 10 can be sequentially applied in the reactor according to the selection of a person skilled in the art, and can be applied simultaneously.

At this time, the tert-butyl peroxide is a volatile substance having a boiling point of about 110 ° C and pyrolyzed at around 150 ° C. On the other hand, the addition amount of the initiator (10) may be an amount known in the art in an amount required for a usual polymerization reaction, and may be, for example, 0.5 to 5 mol% May be more or less than the above range.

The monomer 20 means a unit which can be used to form a thin film on the substrate 530. Monomer 20 reacts with free radical 30 formed by pyrolysis of initiator 10 to form polymer 40, i.e., a thin film. Examples of the monomer 20 include propargyl methacrylate, glycidyl methacrylate, PFM, furfuryl methacrylate, HEMA, vinyl pyrrolidone, such as cyclohexyl methacrylate, perfluorodecyl acrylate (PFA), trivinyltrimethyl cyclotrisiloxane (V3D3), 4aminostyrene (AS), NIPAAm (maleic anhydridealtstyrene), MAASTEA (methacrylic acidcoethyl acrylate), EGDMA (ethyleneglycoldimethacrylate), DVB , DEGDVE (di (ethyleneglycol) di (vinyl ether)), and the like. The following Table 2 shows an example of the monomers 20 that can be used in the embodiments of the present invention.

[Table 2]

Referring to FIG. 5, the exhaust port 550 discharges the monomer 20 and the initiator 10 which have not contributed to the formation of the thin film to the outside. 5, the exhaust port 550 may be formed at any position such as a lower portion, a central portion, and a side portion of the iCVD chamber 500, although it is illustrated as being located above the iCVD chamber 500.

The heating unit 520 for forming the thin film is an apparatus for providing heat in the iCVD chamber 500, and may be, for example, a hot filament. The heating unit 520 pyrolyzes the initiator 10 injected into the iCVD chamber 500 to form a free radical 30 wherein the temperature range of the heat provided by the heating unit 520 is between 150 ° C. and 300 ° C. Lt; 0 > C.

The physical properties of the polymer thin film obtained through the process can be controlled by controlling the process parameters of the initiative chemical vapor deposition (iCVD) using the initiator (10). That is, by adjusting the process pressure, time, temperature, flow rate of the initiator and monomer, filament temperature, and the like, it is possible to control physical properties such as the molecular weight of the polymer thin film, the desired thickness of the thin film,

When the heating unit 520 maintains the temperature in the iCVD chamber 500 at 150 ° C to 300 ° C, a gaseous reaction can be induced. The temperature provided by the heating unit 520 is sufficiently high in the pyrolysis of the butylbutyl peroxide Temperature, or the temperature at which most organic materials, including other monomers, are not pyrolyzed, can convert various types of monomers into polymeric films without chemical damage.

The cooling unit 540 may be disposed at a lower portion or at least a portion of the iCVD chamber 500 to lower the temperature of the substrate 530. The cooling unit 540 can lower the temperature of the substrate 530 to prevent the properties of the organic electric field element included in the substrate 530 from being changed by heat and to induce adsorption of monomers and free radicals. At this time, the cooling unit 540 can maintain the temperature of the substrate 530 at about 50 캜 to about 60 캜.

5, the substrate 530 is shown as being fixed within the iCVD chamber 500, but the iCVD chamber 500 may include an insertion port for inserting the substrate 530 into the iCVD chamber 500, And an extraction port for extracting the substrate 530 from the iCVD chamber 500 when the thin film is formed on the iCVD chamber 500.

6 is a block diagram of an iCVD system according to another embodiment of the present invention.

The iCVD system 600 according to another embodiment of the present invention may include a plurality of iCVD chambers 630. Since the single-layer iCVD chamber has the same area, it is difficult to expect an improvement in productivity. Multi-iCVD chambers (multi-layer iCVD chambers) are stacked and can provide improved productivity compared to deposition systems that use one chamber because multiple substrates can be processed.

The iCVD system 600 according to another embodiment of the present invention may include a single mixed region 610, a single subchamber 620, and a plurality of iCVD chambers 630.

The mixed region 610 mixes gaseous monomer and initiator injected through the inlet port and injects the initiator into the sub chamber 620. The sub chamber 620 is injected into the space The monomer 20 is uniformly distributed in the plurality of iCVD chambers 630 through the connection line connecting the sub-chamber 620 and each of the plurality of i-CVD chambers 630, and the uniform distribution of the mixed monomer 20 and the initiator 10, And an initiator (10). Accordingly, the plurality of iCVD chambers 630 polymerize the polymer using the injected monomer 20 and the initiator 10.

Referring to FIG. 6, the mixed region 610 is inserted into an arbitrary hole formed on one side of the three-dimensional space of the sub-chamber 620, And it is irrelevant whether or not the mixed monomer 20 and the initiator 10 in the mixed region 610 are injected into the sub-chamber 620. For example, the outlet port OUTLET PORT of the mixing region 610 may be in the form of being injected into the sub-chamber 620 through the hole.

The subchamber 620 is in the form of a three-dimensional space and can be formed so that the gaseous monomer 20 and the initiator 10 are uniformly distributed.

The iCVD chamber 630 includes a precursor injection unit, a substrate, a heating unit, a cooling unit, and the like. The iCVD chamber 630 can polymerize the polymer using the monomer 20 and the initiator 10 injected from the sub- have. At this time, the connection line is a connection channel for injecting the monomer 20 and the initiator 10 into each of the plurality of iCVD chambers 630 in the single sub-chamber 620, and the sub-chamber 620 and the iCVD chamber 630, respectively. Depending on the embodiment, the connecting lines are not limited to the upper, lower, left, right or center positions of the side surfaces, and the number, size and shape as well as the positions are of course not limited.

Referring to FIG. 6, an iCVD system 600 according to another embodiment of the present invention may include a plurality of vertically stacked iCVD chambers 630. At this time, the plurality of iCVD chambers 630 may have different sizes, have the same size, and each substrate may have a different area or have the same area. Further, each of the plurality of iCVD chambers 630 may form a thin film on a different substrate.

(Not shown) in each of a plurality of iCVD chambers 630, according to an embodiment. For example, the iCVD chamber 630 may include the precursor injection unit, and may be included in a one-to-one correspondence. Different precursors may be injected through the precursor injector depending on the type of substrate accommodated in the plurality of iCVD chambers 630.

In this case, each of the substrates may be a flexible substrate or a glass substrate. The flexible substrate may be made of polyethylene terephthalate (PET), poly (methyl methacrylate), PMMA ), Polycarbonate (PC), polyethylenesulfone (PES), and the like.

6, an iCVD system 600 according to another embodiment of the present invention includes a plurality of iCVD chambers 630 and an initiator 10 uniformly distributed monomers 20 and initiators 10 in a single sub- ). ≪ / RTI > For example, the monomer 20 may include the same material or different materials depending on the kind of the thin film to be formed on the substrate. Accordingly, the iCVD system 600 can deposit a thin film on a large number of substrates in the same time by injecting monomers and initiators of the same material into each of a plurality of iCVD chambers 630, and a plurality of iCVD chambers 630 ) By injecting different monomers and initiators to form a thin film having different functions for each chamber, it is possible to realize a deposition system capable of producing a small quantity of various kinds of products.

6, an iCVD system 600 according to another embodiment of the present invention includes a single mixed region 610, a single sub-chamber 620, and a plurality of i-CVD chambers 630, Thus, it can be implemented with a plurality of mixed regions 610, a plurality of sub-chambers 620 and a plurality of i-CCVD chambers 630, for example a mixed region 610, a sub-chamber 620 and an i- 630 may be formed in a 1: 1: 1 matching manner. Thus, a deposition system capable of forming a thin film having different functions in the iCVD chamber 630 can be provided.

Figure 7 illustrates a three-dimensional view of an iCVD chamber in accordance with another embodiment of the present invention.

For convenience of illustration, FIG. 7 shows an iCVD system in which three iCVD chambers are vertically stacked, but the number of iCVD chambers stacked in an iCVD system according to the present invention is not limited.

When a substrate is inserted into each iCVD chamber, monomer and initiator are injected into each iCVD chamber. The monomers and initiators injected into each iCVD chamber may be of the same kind or may be of different kinds. The initiator forms a free radical by a heating part, and the free radical reacts with the monomer on the substrate cooled by the cooling part to form a polymer, that is, a thin film.

Since the polymerization of the monomer can be carried out at a low temperature, for example, from 10 to 40 占 폚, it is not necessary to maintain a high temperature, so that it is possible to form a thin film by consuming only energy to operate the heating unit. Depending on the embodiment, the temperature may be maintained at about 50 [deg.] C to about 60 [deg.] C or lower.

By using a plurality of iCVD chambers, it is possible to provide at least two times more productivity than when forming a thin film through an iCVD system according to another embodiment of the present invention, and a single layer iCVD system can be obtained by vertically stacking a plurality of iCVD chambers It can provide better space utilization than horizontal sorting.

8 shows a flow chart of an iCVD method according to an embodiment of the present invention.

The iCVD method according to an embodiment of the present invention shown in FIG. 8 is performed by an initiated Chemical Vapor Deposition (iCVD) using an initiator according to an embodiment of the present invention shown in FIG.

Referring to FIG. 8, in Step 810, a gaseous monomer and an initiator are mixed.

In step 810, the mixed region may be introduced with monomer and initiator injected from the monomer inlet port and the initiator inlet port into the interior of the sub-chamber.

At this time, each of the monomer and the initiator may be the same kind or may be different kinds. The initiator may be a peroxide, such as tertbutylperoxide (TBPO) or benzophenone, but the above examples do not limit the kind of initiator that can be used in the process of the present invention.

In step 820, the distribution of the mixed monomers and initiator is equalized.

In step 820, the sub-chamber can distribute and homogenize the mixed monomer and initiator through the mixed region in a three-dimensional space. At this time, in step 820, the sub-chamber may sort the defective monomer or initiator among the mixed monomers and the initiator.

Thereafter, in step 830, the polymer is polymerized using monomers and an initiator.

In step 830, the iCVD chamber heats the initiator to form free radicals based on the monomers and initiator injected from the subchamber, activates the monomers using free radicals, forms a thin film on the substrate Lt; / RTI >

For example, an iCVD chamber can use a heated filament to raise the temperature in the chamber, and the temperature in the chamber can be raised to form free radicals in the initiator. In this case, since the monomer is a basic unit of the polymer, it must not be pyrolyzed, so it must be heated above the pyrolysis temperature of the initiator but below the pyrolysis temperature of the monomer. Depending on the embodiment, the monomers injected into the iCVD chamber may be different materials, so the temperature at which the chamber is heated may also vary depending on the type of monomer.

The iCVD chamber can then cool the substrate to react with free radicals and monomers on the substrate to form a polymer, i.e., a thin film. Since the polymerization reaction may occur at a relatively low temperature, for example, the temperature around the substrate can be maintained at room temperature. For example, a thin film can be formed on a substrate by disposing a cooling line through which a coolant passes under the substrate. In addition, since the type of the thin film formed on each substrate varies according to the type of the unit to be injected, productivity of the thin film can be improved when the iCVD chamber is vertically stacked.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

Claims (14)

In Initiated Chemical Vapor Deposition (iCVD) using an initiator,
A mixed region in which gaseous monomers and the initiator are mixed;
A sub-chamber for homogenizing the distribution of the mixed monomer and the initiator injected into the space; And
An iCVD chamber for polymerizing the polymer using the monomer and the initiator injected from the sub chamber;
≪ / RTI > The method according to claim 1,
The mixing region
A monomer inlet port for injecting the monomer;
An initiator inlets for injecting the initiator;
A mixing portion for mixing the monomer and the initiator; And
An outlet port for introducing the mixed monomer and the initiator into the sub-chamber,
≪ / RTI > 3. The method of claim 2,
The mixing section
An iCVD system formed from a screw plate for preventing backflow and mixing the monomer inlet port and the initiator injected from the initiator inlet port and the initiator. The method according to claim 1,
The sub-
Wherein the mixed monomer and the initiator injected from the mixed region are distributed in the space to equalize the three-dimensional space. 5. The method of claim 4,
The sub-
ICVD system for classifying defective monomers or initiators among said mixed monomers and initiators. The method according to claim 1,
The space
Wherein the heat treatment is performed to prevent adsorption of the mixed monomer and the initiator. The method according to claim 1,
The iCVD chamber
A precursor injecting unit injecting the monomer and the initiator; And
A temperature controller for controlling the temperature of the substrate to form a thin film on the substrate using the precursor,
≪ / RTI > 8. The method of claim 7,
The precursor injecting portion
And a plurality of different precursors are injected depending on the type of the substrate to be accommodated. 8. The method of claim 7,
The temperature controller
A heating unit for pyrolyzing the initiator to form a free radical; And
A cooling unit for lowering the temperature of the substrate to adsorb the monomer and the free radical,
≪ / RTI > A method of operating an Initiated Chemical Vapor Deposition (iCVD) system using an initiator,
Mixing the gaseous monomers and the initiator;
Homogenizing the distribution of the mixed monomers and the initiator; And
Polymerizing the polymer using the monomer and the initiator
≪ / RTI > 11. The method of claim 10,
The step of mixing the monomer and the initiator
Wherein the monomer injected from the monomer inlet port and the initiator inlet port into the mixing zone and the initiator are mixed and introduced into the interior of the subchamber. 11. The method of claim 10,
The step of homogenizing the distribution of the mixed monomers and initiator
In a sub-chamber formed as a three-dimensional space, the mixed monomer and the initiator are distributed in the space to equalize the iCVD method. 13. The method of claim 12,
The step of homogenizing the distribution of the mixed monomers and initiator
ICVD method for classifying defective monomers or initiators among said mixed monomers and initiators. 11. The method of claim 10,
The step of polymerizing the polymer
Heating the monomer and the initiator to form a free radical, activating the monomer using the free radical, and cooling to form a thin film on the substrate.

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