KR20190032077A - 리모트 플라즈마를 이용한 원자층 증착 시스템 - Google Patents

리모트 플라즈마를 이용한 원자층 증착 시스템 Download PDF

Info

Publication number
KR20190032077A
KR20190032077A KR1020170120564A KR20170120564A KR20190032077A KR 20190032077 A KR20190032077 A KR 20190032077A KR 1020170120564 A KR1020170120564 A KR 1020170120564A KR 20170120564 A KR20170120564 A KR 20170120564A KR 20190032077 A KR20190032077 A KR 20190032077A
Authority
KR
South Korea
Prior art keywords
reaction chamber
plasma
atomic layer
layer deposition
plasma generator
Prior art date
Application number
KR1020170120564A
Other languages
English (en)
Other versions
KR102074346B1 (ko
Inventor
안지환
유진근
오성국
김형준
신정우
양병찬
고도현
Original Assignee
서울과학기술대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울과학기술대학교 산학협력단 filed Critical 서울과학기술대학교 산학협력단
Priority to KR1020170120564A priority Critical patent/KR102074346B1/ko
Publication of KR20190032077A publication Critical patent/KR20190032077A/ko
Application granted granted Critical
Publication of KR102074346B1 publication Critical patent/KR102074346B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명의 일 실시예에 따르는 리모트 플라즈마를 이용한 원자층 증착 시스템은 트래블링 웨이브 방식의 반응 챔버, 및 플라즈마를 발생시키고, 상기 발생된 플라즈마를 상기 반응 챔버로 공급하는 플라즈마 발생기를 포함하고, 상기 반응 챔버와 상기 플라즈마 발생기 사이의 거리는 변경 가능한 것이다.

Description

리모트 플라즈마를 이용한 원자층 증착 시스템{REMOTE PLASMA-BASED ATOMIC LAYER DEPOSITION SYSTEM}
본 발명은 리모트 플라즈마를 이용한 원자층 증착 시스템에 관한 것이다.
원자층 증착 방법(Atomic Layer Deposition; ALD)은 화학적 기상 증착법(Chemical Vapor Deposition; CVD)의 한 종류로서 전구체(Precursor)와 산화제(Oxidant)를 순차적, 반복적으로 넣어주는 방법을 사용함으로써 고품질의 박막을 얻을 수 있는 방법이다. 원자층 증착 방법은 옴스트롱(Angstron) 단위의 박막 두께 조절이 가능하며, 복잡한 구조의 기판이나 규모가 큰 기판에도 균일하게 박막이 증착된다는 장점을 가지고 있다. 또한, 기존의 화학적 기상 증착법에 비해 낮은 온도(<300℃)에서도 박막 증착이 가능하다는 장점이 있다. 하지만, 옴스트롱 단위로 쌓이다 보니 증착률이 낮다는 점과 충분한 열에너지가 없을 경우 박막에 불순물 함유량이 높아지는 단점이 있다.
기존의 열을 이용한 원자층 증착법의 문제점을 개선하기 위하여 높은 반응성을 가진 플라즈마(Plasma)를 산화제로 이용하는 시스템이 고안되었다. 종래의 플라즈마를 이용한 시스템은 전구체의 리간드(Ligand)를 효과적으로 제거함으로써 불순물 함유도를 낮출 수 있었으나, 전구체의 이동거리가 길고, 기판의 반입 및 반출이 어려웠으며, 설계가 복잡하여 전구체의 교체가 어려웠고 냉점이 생기는 지점이 많아 전구체가 응결될 가능성이 높았다. 또한, 플라즈마와 기판의 사이가 멀어 플라즈마가 재결합 되어 기판에 영향을 미치기 어려웠다. 또한, 반응이 일어나는 챔버의 크기가 커서 차세대 물질들을 실험하기에 곤란함이 있었다.
한국등록특허공보 제10-0399067호 (2003.09.26 공고)
본 발명은 전술한 종래 기술의 문제점을 해결하기 위한 것으로서, 종래의 원자층 증착 시스템에 비해 크기가 작고, 구조가 단순하며, 시제품 제작 및 신소재 연구 개발을 용이하게 할 수 있는 리모트 플라즈마를 이용한 원자층 증착 시스템을 제공하고자 한다.
상술한 기술적 과제를 달성하기 위한 기술적 수단으로서, 본 발명의 일 실시예에 따르는 리모트 플라즈마를 이용한 원자층 증착 시스템은 트래블링 웨이브(Travelling-wave) 방식의 반응 챔버, 및 플라즈마를 발생시키고, 발생된 플라즈마를 상기 반응 챔버로 공급하는 플라즈마 발생기를 포함하고, 상기 반응 챔버와 상기 플라즈마 발생기 사이의 거리는 변경할 수 있다.
상기 원자층 증착 시스템은 상기 반응 챔버와 상기 플라즈마 발생기를 연결하는 플렉시블 튜빙을 더 포함할 수 있고, 상기 반응 챔버와 상기 플라즈마 발생기 사이의 거리는 상기 플렉시블 튜빙을 통해 변경할 수 있다.
상기 원자층 증착 시스템은 복수의 전구체 캐니스터와 연결 가능한 매니폴드를 더 포함하고, 상기 반응 챔버는 원통 형상을 가지고, 상기 반응 챔버의 일단은 상기 매니폴드에 연결되며, 상기 일단은 테이퍼 형상의 리듀서를 구비할 수 있다.
상기 원자층 증착 시스템은 상기 반응 챔버의 내부 압력을 측정하는 압력계, 상기 반응 챔버의 내부 기체를 배기하는 펌프, 및 상기 반응 챔버로 기판을 반입 및 반출하는 기판 반입부를 더 포함하고, 상기 압력계와 상기 기판 반입부는 QF 파이프관을 이용하여 상기 반응 챔버에 연결되고, 상기 펌프는 CF 파이프관을 이용하여 상기 반응 챔버에 연결될 수 있다.
상기 플라즈마 발생기는 석영관, 상기 석영관을 둘러싸는 코일, 상기 석영관으로 플라즈마 가스를 공급하는 가스 공급부, 및 상기 석영관을 지지하는 복수개의 기둥을 포함을 포함할 수 있다.
상술한 과제 해결 수단은 단지 예시적인 것으로서, 본 발명을 제한하려는 의도로 해석되지 않아야 한다. 상술한 예시적인 실시예 외에도, 도면 및 발명의 상세한 설명에 기재된 추가적인 실시예가 존재할 수 있다.
본 발명은 종래 기술에 비해 크기가 작고, 구조가 단순하며, 시제품 제작 및 신소재 연구 개발에 사용하기 적합한 원자층 증착 시스템을 제공할 수 있다.
본 발명은 냉점이 발생할 가능성을 최소화할 수 있는 원자층 증착 시스템을 제공할 수 있다. 본 발명은 고체형 전구체를 포함한 다양한 전구체를 이용하여 차세대 박막 물질을 실험하기에 적합한 원자층 증착 시스템을 제공할 수 있다.
본 발명은 플라즈마 밀도를 넓은 범위에서 조절할 수 있는 원자층 증착 시스템을 제공할 수 있다.
도 1은 본 발명의 일 실시예에 따른 원자층 증착 시스템의 구성도이다.
도 2는 본 발명의 일 실시예에 따른 반응 챔버의 구성도이다.
도 3은 본 발명의 일 실시예에 따른 리듀서의 구성도이다.
도 4는 본 발명의 일 실시예에 따른 플라즈마 발생기의 구성도이다.
도 5는 본 발명의 일 실시예에 따른 매니폴드의 구성도이다.
도 6은 본 발명의 일 실시예에 따른 반응 챔버와 플라즈마 발생기 사이의 거리를 변경하는 방법을 설명하기 위한 도면이다.
도 7은 유도 결합 플라즈마(ICP)와 용량 결합 플라즈마(CCP)에 따른 플라즈마 밀도의 조절 범위를 설명하기 위한 도면이다.
아래에서는 첨부한 도면을 참조하여 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 본 발명의 실시예를 상세히 설명한다. 그러나 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시예에 한정되지 않는다. 그리고 도면에서 본 발명을 명확하게 설명하기 위해서 설명과 관계없는 부분은 생략하였으며, 명세서 전체를 통하여 유사한 부분에 대해서는 유사한 도면 부호를 붙였다.
명세서 전체에서, 어떤 부분이 다른 부분과 "연결"되어 있다고 할 때, 이는 "직접적으로 연결"되어 있는 경우뿐 아니라, 그 중간에 다른 소자를 사이에 두고 "전기적으로 연결"되어 있는 경우도 포함한다. 또한 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있는 것을 의미한다.
도 1은 본 발명의 일 실시예에 따른 원자층 증착 시스템(100)의 구성도이다. 도 1을 참조하면, 원자층 증착 시스템(100)은 반응 챔버(110), 플라즈마 발생기(120), 매니폴드(130), 압력계(140) 및 펌프관(150)을 포함할 수 있다. 이러한 도 1의 원자층 증착 시스템(100)은 본 발명의 일 실시예에 불과하므로 도 1을 통해 본 발명이 한정 해석되는 것은 아니다. 즉, 본 발명의 다양한 실시예들에 따르면 원자층 증착 시스템은 도 1과 다르게 구성될 수도 있으며, 예컨대 기판 반입부 및 플렉시블 튜빙을 더 포함할 수 있다.
이하에서는 도 2 내지 도 5를 참조하여, 원자층 증착 시스템(100)의 각 구성에 대하여 상세히 설명한다.
도 2는 본 발명의 일 실시예에 따른 반응 챔버(110)의 구성도이다. 도 2를 참조하면, 반응 챔버(110)는 내부에서 증착 처리를 수행하는 트래블링 웨이브 방식(Travelling-wave)의 챔버로 구성될 수 있다.
트래블링 웨이브 방식의 반응 챔버(110)는 비교적 간단한 구조로 이루어져 있어 챔버 전체에 균일하게 열을 가하기 쉽다. 또한, 트래블링 웨이브 방식의 반응 챔버(110)는 다른 챔버 방식인 샤워 헤드 방식의 챔버에 비하여 고체형 전구체의 이용에 적합하다. 샤워 헤드 방식의 경우, 전구체가 샤워 헤드 부분의 냉점에서 응결이 되어 샤워 헤드의 구멍이 막히게 되므로, 고체형 전구체를 이용하기에 부적합하다. 이에 반하여, 트래블링 웨이브 방식의 반응 챔버(110)는 응결이 발생할 수 있는 냉점이 현저히 적어 고체형 전구체를 이용하기에 적합하다. 한편, 차세대 박막 물질의 전구체(Precursor)는 아직 개발이 활발하게 이루어 지지 않아 고체형 전구체 혹은 높은 온도에서 기화되는 전구체들이 많으므로, 트래블링 웨이브 방식의 반응 챔버(110)를 가짐으로써 차세대 박막 물질을 실험하기에 적합한 원자층 증착 시스템을 구현할 수 있다.
반응 챔버(110)는 원통 형상으로 구성될 수 있다. 반응 챔버(110)를 원통 형상으로 설계함으로써 히터를 쉽게 감을 수 있으며 증착 처리를 위한 온도를 효과적으로 유지할 수 있다.
반응 챔버(110)는 원통 형상의 원통부(111)와 테이퍼 형상의 리듀서(112)를 포함할 수 있다. 원통부(111)는 플라즈마 발생기를 연결하는 플라즈마 발생기 연결부(114), 압력계를 연결하는 압력계 연결부(115) 및 펌프관을 연결하는 펌프관 연결부(116)를 포함할 수 있다.
플라즈마 발생기 연결부(114)는 높이가 변경 가능하게 구성될 수 있다. 예컨대 플라즈마 발생기 연결부(114)는 플렉시블 튜빙(Flexible tubing)으로 구성될 수 있으며, 플렉시블 튜빙을 통해 플라즈마 발생기 연결부(114)의 높낮이를 조절함으로써 반응 챔버(110)와 플라즈마 발생기 사이의 거리를 변경할 수 있다. 플렉시블 튜빙에 대해서는 이하 도 6에 관한 설명에서 보다 자세히 다루도록 한다.
압력계 연결부(115)는 QF파이프관을 이용하여 압력계를 반응 챔버(110)에 연결할 수 있다. QF 파이프관에 사용되는 오링(O-ring)이 열에 약하기 때문에 압력계 연결부(115)는 열을 받는 반응 챔버(110)의 원통부(111)으로부터 일정 간격이 떨어져 있게 설계될 수 있다. QF파이프관을 이용하여 압력계를 연결함으로써 압력계를 간단히 결합 및 분해할 수 있고 진공 상태를 효과적으로 유지할 수 있다.
펌프관 연결부(116)는 예컨대 CF 파이프관을 이용하여 펌프관을 반응 챔버(110)에 연결할 수 있다. 펌프관은 반응 챔버(110)와 연결된 후 분해할 경우가 적기 때문에 CF 파이프관을 이용하여 연결하기 적합하다.
반응 챔버(110)의 우측 일단에는 매니폴드를 연결할 매니폴드 연결부(113)가 구비되어 있고, 좌측 타단에는 기판을 반응 챔버(110) 내로 반입 및 반출할 수 있는 기판 반입부(117)가 구비되어 있다.
매니폴드 연결부(113)는 금속 가스켓 양면 접속 피팅(VCR fitting)을 통해 매니폴드를 반응 챔버(110)에 연결할 수 있다. VCR을 이용하여 매니폴드를 연결함으로써 반응 챔버(110) 혹은 매니폴드에 문제가 생길 시 VCR 연결에 필요한 가스켓(Gasket)만 교환하여 용이하게 부품을 교환할 수 있다.
기판 반입부(117)는 QF 파이프관으로 구성될 수 있다. 기판 반입부(117)를 통해 반응 챔버(110)내로 기판을 반입 및 반출할 수 있다. 기판 반입부(117)는 평상시에는 블랭크 플렌지(Blank Flange)와 결합되어 막혀있을 수 있다.
도시하지 않았지만, 반응 챔버(110)는 내부에 기판 재치대를 더 포함할 수 있다. 예컨대, 기판 재치대(미도시)를 플라즈마 발생기 연결부(114)의 아래 공간에 배치하여 플라즈마 발생기와 기판의 거리를 줄이고, 플라즈마가 재결합하는 것을 방지하여 효과적으로 플라즈마를 이용할 수 있다.
도 3은 본 발명의 일 실시예에 따른 리듀서의 구성도이다. 도 2 및 3을 참조하면 리듀서(112)는 반응 챔버(110)의 원통부(111)와 매니폴드 연결부(113)의 사이에 위치한다. 매니 폴드로부터 반응 챔버(110)로 가스가 흘러들어갈 때, 급격한 반지름의 변화는 컬(Curl)을 유발하기 때문에 테이퍼 형상의 리듀서(112)를 원통부(111)와 매니폴드 연결부(113) 사이에 배치함으로서 급격한 반지름의 변화를 줄일 수 있다.
도 4는 본 발명의 일 실시예에 따른 플라즈마 발생기의 구성도이다. 도 4를 참조하면, 플라즈마 발생기(120)는 석영관(121), 코일(122), 가스 공급관(123), 지지부(124, 125) 및 기둥부(126)를 포함할 수 있다.
코일(122)은 석영관(121)을 둘러싸도록 배치된다. 가스 공급관(123)을 통해 석영관(121) 내부로 플라즈마 가스가 공급되고, 코일(122)에 교류 전류가 인가되면 석영관(121) 내부에 유도 결합 플라즈마가 발생된다. 코일(122)에는 도시하지 않은 전원부가 연결되어 있고, 가스 공급관(123)에는 도시하지 않은 가스 공급부가 연결되어 있다.
석영관(121)의 내부에 발생된 유도 결합 플라즈마는 반응 챔버로 공급된다. 유도 결합 플라즈마(ICP)를 이용함으로써 용량 결합 플라즈마(CCP)를 이용하는 것에 비하여 박막 손상을 줄일 수 있다. 또한, 유도 결합 플라즈마는 용량 결합 플라즈마에 비하여 플라즈마 밀도의 조절 범위가 넓고 플라즈마를 발생 시킬 수 있는 압력 범위 역시 넓으므로, 유도 결합 플라즈마를 이용함으로써 다양한 물질을 넓은 조건 범위에서 실험할 수 있다.
석영관(121)은 위아래로 오링을 넣을 수 있는 홈이 파여져 있으며, 오링을 개재하여 지지부(124, 125)에 고정된다. 오링을 개재함으로써 석영관 내부를 진공으로 유지할 수 있다.
석영관(121)은 깨지기 쉽기 때문에 석영관(121) 주위에 복수개의 기둥부(126)를 설치함으로써 석영관(121)을 보다 안정적으로 지지할 수 있다.
도 5는 본 발명의 일 실시예에 따른 매니폴드의 구성도이다. 도 5를 참조하면, 매니폴드(130)는 튜브로 구성될 수 있으며, 반응 챔버 연결부(131), 복수개의 캐니스터 연결부(132), 및 캐리어 가스 연결부(133)를 포함할 수 있다.
반응 챔버 연결부(131)는 락피팅(Lok Fitting)를 이용하여 반응 챔버와 매니폴드(130)를 연결하고, 캐리어 가스 연결부(133)는 캐리어 가스에 연결되어 있는 유량 조절에 연결를 매니폴드(130)에 연결할 수 있다.
캐니스터 연결부(132)는 복수개로 구성되어 복수개의 전구체 캐니스터를 각각 연결할 수 있으며, VCR을 이용하여 전구체 캐니스터를 쉽게 교체 할 수 있다. 캐니스터 연결부(132)에 복수개의 전구체 캐니스터의 연결이 가능함으로써 여러 물질을 섞어 도핑(Doping)된 물질이나 안정화(Stabilized)된 물질의 개발을 용이하게 할 수 있다. 본 발명의 일 실시예에 따른 매니폴드(130)는 캐니스터 연결부(132)를 외부로 노출시킴으로서 전구체 캐니스터를 용이하게 교체할 수 있다.
매니폴드(130)의 각 연결부는 압축공기식밸브(Pneumatic valve)를 포함할 수 있으며, 온도에 따라 ALD 밸브 혹은 다이어프램 밸브(Diaphragm valve)를 사용할 수 있다.
도 1로 돌아와서, 원자층 증착 시스템(100)의 결합 관계에 대해서 설명한다. 도 1을 참조하면, 본 발명의 일 실시예에 따른 원자층 증착 시스템(100)은 트래블링 웨이브 방식의 반응 챔버(110)와 유도 결합 플라즈마를 발생시키는 플라즈마 발생기(120)를 결합하여 구성된다.
트래블링 웨이브 방식의 반응 챔버(110)와 유도 결합 방식의 플라즈마 발생기(120)를 결합한 시스템을 이용함으로써 고체 상태의 전구체를 실험해 볼 수 있으며, 플라즈마 밀도를 넓은 범위에서 조절 할 수 있음으로써, 차세대 박막 물질에 대한 테스트를 용이하게 수행할 수 있다.
또한, 종래의 샤워 헤드 방식의 챔버 등은 전체 시스템의 규모가 컸고, 구조가 복잡하였다. 본 발명의 일 실시예에 따른 원자층 증착 시스템(100)은 트래블링 웨이브 방식의 반응 챔버(110)와 유도 결합 방식의 플라즈마 발생기(120)를 결합함으로써 시제품 제작 및 연구에 최적화 할 수 있도록 시스템을 소형화 및 단순화 시켰다. 전체 시스템이 작아짐으로서 냉점이 생길 가능성을 최소화 하였고 전구체가 이동해야 하는 거리 역시 줄어들어 캐리어 가스의 유량을 최소화할 수 있다.
원자층 증착 시스템(100)은 펌프관(150)에 연결된 펌프를 통해 반응 챔버(110) 내의 기체를 배기할 수 있다. 펌프는 예컨대 로터리 펌프를 사용할 수 있다. 원자층 증착 처리에서는 진공 상태를 유지하는 것이 중요한데, 전체 시스템의 소형화 에 따라 로터리 펌프만으로도 충분한 진공압을 유지할 수 있다. 또한, 압력계(140)를 통해 반응 챔버(110)의 내부 압력을 측정할 수 있다.
본 발명의 일 실시예에 따른 원자층 증착 시스템을 이용한 원자층 증착 과정에 대해서 설명한다. (1) 매니폴드에 연결된 전구체 캐니스터로부터 전구체가 나와 캐리어 가스를 타고 반응 챔버로 이동한다. (2) 펌프를 이용하여 반응 챔버 내부에 남아있는 전구체를 제거한다. 반응 챔버로 비활성기체(Ar, N2)를 공급하고 배기하여 반응 챔버 내부를 청소할 수 있다. (3) 플라즈마 발생부에서 플라즈마를 발생시킨다. 목적에 따라 기체를 다르게 사용할 수 있으며(예컨대, O2, N2, NH3), 플라즈마 발생기 에서 발생한 플라즈마를 반응 챔버로 공급한다. (4) 반응 챔버를 배기하여 반응 과정에서 생긴 부산물(Byproduct)들을 제거한다.
본 발명의 일 실시예에 따른 원자층 증착 시스템(100)은 반응 챔버(110)와 플라즈마 발생기(120) 사이의 거리를 가변할 수 있도록 구성된다. 이에 대하여 이하 도 6을 참조하여 자세히 설명하도록 한다.
도 6은 본 발명의 일 실시예에 따른 반응 챔버와 플라즈마 발생기 사이의 거리를 변경하는 방법을 설명하기 위한 도면이다. 도 6을 참조하면 반응 챔버(110)와 플라즈마 발생기(120)는 플렉시블 튜빙(170)을 이용하여 연결될 수 있다. 플렉시블 튜빙(170)은 높이를 조절 가능하며, 플렉시블 튜빙(170)의 높이를 조절함으로써 반응 챔버(110)와 플라즈마 발생기(120) 사이의 거리(D)를 변경할 수 있다.
반응 챔버(110)와 플라즈마 발생기(120) 사이의 거리를 변경함으로써 플라즈마 내의 라디칼과 이온의 밀도를 조절할 수 있다. 플라즈마 밀도는 라디칼 밀도와 이온 밀도 두 개로 나뉠 수 있다. 라디칼은 주로 극 표면 반응에 참여함으로써 박막의 증착률에 영향을 미치고 이온은 수nm ~ 수십nm 내부에 영향을 미침으로써 박막의 결정성 혹은 구성 요소(Composition)에 영향을 미친다. 반응 챔버(110)와 플라즈마 발생기(120) 사이의 거리(D)가 커질수록 플라즈마 내부에는 라디칼의 밀도가 높아져 박막을 결정성을 높이거나 탄소, 질소 등의 불순물 함량을 낮출 수 있다. 반면, 거리(D)를 작아질수록 이온의 밀도를 높임으로써 박막의 증착률을 높일 수 있다. 따라서, 반응 챔버(110)와 플라즈마 발생기(120) 사이의 거리(D)를 조정하여 다양한 플라즈마 밀도에서 박막을 증착할 수 있다.
도 7은 유도 결합 플라즈마(ICP)와 용량 결합 플라즈마(CCP)에 따른 플라즈마 밀도의 조절 범위를 설명하기 위한 도면이다. 도 7을 참조하면 유도 결합 플라즈마(ICP)는 용량 결합 플라즈마(CCP)에 비하여 플라즈마 밀도의 조절 범위가 넓고 플라즈마를 발생 시킬 수 있는 압력 범위 역시 넓은 것을 확인할 수 있다. 본 발명은 유도 결합 플라즈마를 이용함으로써 다양한 범위에서 원자층의 증착을 실험해볼 수 있다.
전술한 본 발명의 설명은 예시를 위한 것이며, 본 발명이 속하는 기술분야의 통상의 지식을 가진 자는 본 발명의 기술적 사상이나 필수적인 특징을 변경하지 않고서 다른 구체적인 형태로 쉽게 변형이 가능하다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. 예를 들어, 단일형으로 설명되어 있는 각 구성 요소는 분산되어 실시될 수도 있으며, 마찬가지로 분산된 것으로 설명되어 있는 구성 요소들도 결합된 형태로 실시될 수 있다.
본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 균등 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.
100: 원자층 증착 시스템
110: 반응 챔버
120: 플라즈마 발생기
130: 매니폴드
140: 압력계
150: 펌프관

Claims (5)

  1. 리모트 플라즈마를 이용한 원자층 증착 시스템에 있어서,
    트래블링 웨이브 방식의 반응 챔버; 및
    플라즈마를 발생시키고, 상기 발생된 플라즈마를 상기 반응 챔버로 공급하는 플라즈마 발생기
    를 포함하고,
    상기 반응 챔버와 상기 플라즈마 발생기 사이의 거리는 변경 가능한 것인, 원자층 증착 시스템.
  2. 제 1 항에 있어서,
    상기 반응 챔버와 상기 플라즈마 발생기를 연결하는 플렉시블 튜빙
    을 더 포함하고,
    상기 반응 챔버와 상기 플라즈마 발생기 사이의 거리는 상기 플렉시블 튜빙을 통해 변경 가능한 것인, 원자층 증착 시스템.
  3. 제 1 항에 있어서,
    복수의 전구체 캐니스터와 연결 가능한 매니폴드
    를 더 포함하고,
    상기 반응 챔버는 원통 형상을 가지고, 상기 반응 챔버의 일단은 상기 매니폴드에 연결되며, 상기 일단은 테이퍼 형상의 리듀서를 구비하는 것인, 원자층 증착 시스템.
  4. 제 1 항에 있어서,
    상기 반응 챔버의 내부 압력을 측정하는 압력계;
    상기 반응 챔버의 내부 기체를 배기하는 펌프; 및
    상기 반응 챔버로 기판을 반입 및 반출하는 기판 반입부
    를 더 포함하고,
    상기 압력계와 상기 기판 반입부는 QF 파이프관을 이용하여 상기 반응 챔버에 연결되고, 상기 펌프는 CF 파이프관을 이용하여 상기 반응 챔버에 연결되는 것인, 원자층 증착 시스템.
  5. 제 1 항에 있어서,
    상기 플라즈마 발생기는,
    석영관;
    상기 석영관을 둘러싸는 코일;
    상기 석영관으로 플라즈마 가스를 공급하는 가스 공급부; 및
    상기 석영관을 지지하는 복수개의 기둥
    을 포함하는 것인, 원자층 증착 시스템.
KR1020170120564A 2017-09-19 2017-09-19 리모트 플라즈마를 이용한 원자층 증착 시스템 KR102074346B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020170120564A KR102074346B1 (ko) 2017-09-19 2017-09-19 리모트 플라즈마를 이용한 원자층 증착 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170120564A KR102074346B1 (ko) 2017-09-19 2017-09-19 리모트 플라즈마를 이용한 원자층 증착 시스템

Publications (2)

Publication Number Publication Date
KR20190032077A true KR20190032077A (ko) 2019-03-27
KR102074346B1 KR102074346B1 (ko) 2020-02-06

Family

ID=65906837

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170120564A KR102074346B1 (ko) 2017-09-19 2017-09-19 리모트 플라즈마를 이용한 원자층 증착 시스템

Country Status (1)

Country Link
KR (1) KR102074346B1 (ko)

Cited By (231)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
KR102275410B1 (ko) * 2021-03-12 2021-07-09 (주)마루엘앤씨 초전도 선재 제조를 위한 플라즈마 보조 반응성 동시 증착 시스템
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251035B2 (en) 2016-12-22 2022-02-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11387106B2 (en) 2018-02-14 2022-07-12 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11396702B2 (en) 2016-11-15 2022-07-26 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11795545B2 (en) 2014-10-07 2023-10-24 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US12027365B2 (en) 2020-11-24 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US12033885B2 (en) 2020-01-06 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12040184B2 (en) 2017-10-30 2024-07-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US12051567B2 (en) 2020-10-07 2024-07-30 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including gas supply unit
US12057314B2 (en) 2020-05-15 2024-08-06 Asm Ip Holding B.V. Methods for silicon germanium uniformity control using multiple precursors
US12074022B2 (en) 2020-08-27 2024-08-27 Asm Ip Holding B.V. Method and system for forming patterned structures using multiple patterning process
US12087586B2 (en) 2020-04-15 2024-09-10 Asm Ip Holding B.V. Method of forming chromium nitride layer and structure including the chromium nitride layer
US12107005B2 (en) 2020-10-06 2024-10-01 Asm Ip Holding B.V. Deposition method and an apparatus for depositing a silicon-containing material
US12106944B2 (en) 2020-06-02 2024-10-01 Asm Ip Holding B.V. Rotating substrate support
US12112940B2 (en) 2019-07-19 2024-10-08 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US12125700B2 (en) 2020-01-16 2024-10-22 Asm Ip Holding B.V. Method of forming high aspect ratio features
US12129545B2 (en) 2020-12-22 2024-10-29 Asm Ip Holding B.V. Precursor capsule, a vessel and a method
US12131885B2 (en) 2020-12-22 2024-10-29 Asm Ip Holding B.V. Plasma treatment device having matching box

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399067B1 (ko) 2000-12-30 2003-09-26 주식회사 하이닉스반도체 원자층 증착 장치
KR20040082738A (ko) * 2003-03-20 2004-09-30 학교법인 한양학원 Ｄｃ 바이어스를 이용한 리모트 플라즈마 원자층 증착 장치
KR20050072291A (ko) * 2004-01-06 2005-07-11 삼성전자주식회사 화학기상증착장비
KR20080015364A (ko) * 2006-08-14 2008-02-19 옥스퍼드 인스트루먼츠 플라즈마 테크놀로지 리미티드 표면 프로세싱 장치들

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399067B1 (ko) 2000-12-30 2003-09-26 주식회사 하이닉스반도체 원자층 증착 장치
KR20040082738A (ko) * 2003-03-20 2004-09-30 학교법인 한양학원 Ｄｃ 바이어스를 이용한 리모트 플라즈마 원자층 증착 장치
KR20050072291A (ko) * 2004-01-06 2005-07-11 삼성전자주식회사 화학기상증착장비
KR20080015364A (ko) * 2006-08-14 2008-02-19 옥스퍼드 인스트루먼츠 플라즈마 테크놀로지 리미티드 표면 프로세싱 장치들

Cited By (275)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11725277B2 (en) 2011-07-20 2023-08-15 Asm Ip Holding B.V. Pressure transmitter for a semiconductor processing environment
US11501956B2 (en) 2012-10-12 2022-11-15 Asm Ip Holding B.V. Semiconductor reaction chamber showerhead
US11967488B2 (en) 2013-02-01 2024-04-23 Asm Ip Holding B.V. Method for treatment of deposition reactor
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US11795545B2 (en) 2014-10-07 2023-10-24 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US11742189B2 (en) 2015-03-12 2023-08-29 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11242598B2 (en) 2015-06-26 2022-02-08 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US11956977B2 (en) 2015-12-29 2024-04-09 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US11676812B2 (en) 2016-02-19 2023-06-13 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on top/bottom portions
US11101370B2 (en) 2016-05-02 2021-08-24 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US11649546B2 (en) 2016-07-08 2023-05-16 Asm Ip Holding B.V. Organic reactants for atomic layer deposition
US11094582B2 (en) 2016-07-08 2021-08-17 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11749562B2 (en) 2016-07-08 2023-09-05 Asm Ip Holding B.V. Selective deposition method to form air gaps
US11610775B2 (en) 2016-07-28 2023-03-21 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11107676B2 (en) 2016-07-28 2021-08-31 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11694892B2 (en) 2016-07-28 2023-07-04 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11205585B2 (en) 2016-07-28 2021-12-21 Asm Ip Holding B.V. Substrate processing apparatus and method of operating the same
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US11810788B2 (en) 2016-11-01 2023-11-07 Asm Ip Holding B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US11396702B2 (en) 2016-11-15 2022-07-26 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including the gas supply unit
US11222772B2 (en) 2016-12-14 2022-01-11 Asm Ip Holding B.V. Substrate processing apparatus
US11851755B2 (en) 2016-12-15 2023-12-26 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11970766B2 (en) 2016-12-15 2024-04-30 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US12000042B2 (en) 2016-12-15 2024-06-04 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11001925B2 (en) 2016-12-19 2021-05-11 Asm Ip Holding B.V. Substrate processing apparatus
US11251035B2 (en) 2016-12-22 2022-02-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US12043899B2 (en) 2017-01-10 2024-07-23 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11410851B2 (en) 2017-02-15 2022-08-09 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US12106965B2 (en) 2017-02-15 2024-10-01 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US11658030B2 (en) 2017-03-29 2023-05-23 Asm Ip Holding B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US11848200B2 (en) 2017-05-08 2023-12-19 Asm Ip Holding B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11976361B2 (en) 2017-06-28 2024-05-07 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11164955B2 (en) 2017-07-18 2021-11-02 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11695054B2 (en) 2017-07-18 2023-07-04 Asm Ip Holding B.V. Methods for forming a semiconductor device structure and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11004977B2 (en) 2017-07-19 2021-05-11 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11802338B2 (en) 2017-07-26 2023-10-31 Asm Ip Holding B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US11417545B2 (en) 2017-08-08 2022-08-16 Asm Ip Holding B.V. Radiation shield
US11587821B2 (en) 2017-08-08 2023-02-21 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11581220B2 (en) 2017-08-30 2023-02-14 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11069510B2 (en) 2017-08-30 2021-07-20 Asm Ip Holding B.V. Substrate processing apparatus
US11387120B2 (en) 2017-09-28 2022-07-12 Asm Ip Holding B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US12033861B2 (en) 2017-10-05 2024-07-09 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US11094546B2 (en) 2017-10-05 2021-08-17 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US12040184B2 (en) 2017-10-30 2024-07-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11682572B2 (en) 2017-11-27 2023-06-20 Asm Ip Holdings B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11127617B2 (en) 2017-11-27 2021-09-21 Asm Ip Holding B.V. Storage device for storing wafer cassettes for use with a batch furnace
US11639811B2 (en) 2017-11-27 2023-05-02 Asm Ip Holding B.V. Apparatus including a clean mini environment
US11501973B2 (en) 2018-01-16 2022-11-15 Asm Ip Holding B.V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11972944B2 (en) 2018-01-19 2024-04-30 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11393690B2 (en) 2018-01-19 2022-07-19 Asm Ip Holding B.V. Deposition method
US12119228B2 (en) 2018-01-19 2024-10-15 Asm Ip Holding B.V. Deposition method
US11482412B2 (en) 2018-01-19 2022-10-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11735414B2 (en) 2018-02-06 2023-08-22 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11387106B2 (en) 2018-02-14 2022-07-12 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11482418B2 (en) 2018-02-20 2022-10-25 Asm Ip Holding B.V. Substrate processing method and apparatus
US11939673B2 (en) 2018-02-23 2024-03-26 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
US12020938B2 (en) 2018-03-27 2024-06-25 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11398382B2 (en) 2018-03-27 2022-07-26 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
US11908733B2 (en) 2018-05-28 2024-02-20 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11361990B2 (en) 2018-05-28 2022-06-14 Asm Ip Holding B.V. Substrate processing method and device manufactured by using the same
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11837483B2 (en) 2018-06-04 2023-12-05 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US11530483B2 (en) 2018-06-21 2022-12-20 Asm Ip Holding B.V. Substrate processing system
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en) 2018-06-27 2023-11-14 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en) 2018-06-27 2024-04-09 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11168395B2 (en) 2018-06-29 2021-11-09 Asm Ip Holding B.V. Temperature-controlled flange and reactor system including same
US11646197B2 (en) 2018-07-03 2023-05-09 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en) 2018-07-03 2024-03-05 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11804388B2 (en) 2018-09-11 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11274369B2 (en) 2018-09-11 2022-03-15 Asm Ip Holding B.V. Thin film deposition method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en) 2018-10-01 2024-01-30 Asm Ip Holding B.V. Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11414760B2 (en) 2018-10-08 2022-08-16 Asm Ip Holding B.V. Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11664199B2 (en) 2018-10-19 2023-05-30 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US11251068B2 (en) 2018-10-19 2022-02-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11735445B2 (en) 2018-10-31 2023-08-22 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11499226B2 (en) 2018-11-02 2022-11-15 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11866823B2 (en) 2018-11-02 2024-01-09 Asm Ip Holding B.V. Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US11244825B2 (en) 2018-11-16 2022-02-08 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11798999B2 (en) 2018-11-16 2023-10-24 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en) 2018-12-04 2022-11-01 Asm Ip Holding B.V. Method of cleaning substrate processing apparatus
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11769670B2 (en) 2018-12-13 2023-09-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en) 2018-12-14 2023-05-23 Asm Ip Holding B.V. Method of forming a device structure using selective deposition of gallium nitride and system for same
US11959171B2 (en) 2019-01-17 2024-04-16 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390946B2 (en) 2019-01-17 2022-07-19 Asm Ip Holding B.V. Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en) 2019-01-22 2021-11-09 Asm Ip Holding B.V. Substrate processing device
US11127589B2 (en) 2019-02-01 2021-09-21 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11251040B2 (en) 2019-02-20 2022-02-15 Asm Ip Holding B.V. Cyclical deposition method including treatment step and apparatus for same
US11615980B2 (en) 2019-02-20 2023-03-28 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11227789B2 (en) 2019-02-20 2022-01-18 Asm Ip Holding B.V. Method and apparatus for filling a recess formed within a substrate surface
US11798834B2 (en) 2019-02-20 2023-10-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11342216B2 (en) 2019-02-20 2022-05-24 Asm Ip Holding B.V. Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
US11629407B2 (en) 2019-02-22 2023-04-18 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrates
US11114294B2 (en) 2019-03-08 2021-09-07 Asm Ip Holding B.V. Structure including SiOC layer and method of forming same
US11424119B2 (en) 2019-03-08 2022-08-23 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
US11901175B2 (en) 2019-03-08 2024-02-13 Asm Ip Holding B.V. Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11378337B2 (en) 2019-03-28 2022-07-05 Asm Ip Holding B.V. Door opener and substrate processing apparatus provided therewith
US11551925B2 (en) 2019-04-01 2023-01-10 Asm Ip Holding B.V. Method for manufacturing a semiconductor device
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
US11814747B2 (en) 2019-04-24 2023-11-14 Asm Ip Holding B.V. Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11289326B2 (en) 2019-05-07 2022-03-29 Asm Ip Holding B.V. Method for reforming amorphous carbon polymer film
US11781221B2 (en) 2019-05-07 2023-10-10 Asm Ip Holding B.V. Chemical source vessel with dip tube
US11355338B2 (en) 2019-05-10 2022-06-07 Asm Ip Holding B.V. Method of depositing material onto a surface and structure formed according to the method
US11996309B2 (en) 2019-05-16 2024-05-28 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
US11515188B2 (en) 2019-05-16 2022-11-29 Asm Ip Holding B.V. Wafer boat handling device, vertical batch furnace and method
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
US11345999B2 (en) 2019-06-06 2022-05-31 Asm Ip Holding B.V. Method of using a gas-phase reactor system including analyzing exhausted gas
US11908684B2 (en) 2019-06-11 2024-02-20 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11476109B2 (en) 2019-06-11 2022-10-18 Asm Ip Holding B.V. Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
US11390945B2 (en) 2019-07-03 2022-07-19 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11746414B2 (en) 2019-07-03 2023-09-05 Asm Ip Holding B.V. Temperature control assembly for substrate processing apparatus and method of using same
US11605528B2 (en) 2019-07-09 2023-03-14 Asm Ip Holding B.V. Plasma device using coaxial waveguide, and substrate treatment method
US12107000B2 (en) 2019-07-10 2024-10-01 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664267B2 (en) 2019-07-10 2023-05-30 Asm Ip Holding B.V. Substrate support assembly and substrate processing device including the same
US11664245B2 (en) 2019-07-16 2023-05-30 Asm Ip Holding B.V. Substrate processing device
US11996304B2 (en) 2019-07-16 2024-05-28 Asm Ip Holding B.V. Substrate processing device
US11615970B2 (en) 2019-07-17 2023-03-28 Asm Ip Holding B.V. Radical assist ignition plasma system and method
US11688603B2 (en) 2019-07-17 2023-06-27 Asm Ip Holding B.V. Methods of forming silicon germanium structures
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US12129548B2 (en) 2019-07-18 2024-10-29 Asm Ip Holding B.V. Method of forming structures using a neutral beam
US12112940B2 (en) 2019-07-19 2024-10-08 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11282698B2 (en) 2019-07-19 2022-03-22 Asm Ip Holding B.V. Method of forming topology-controlled amorphous carbon polymer film
US11557474B2 (en) 2019-07-29 2023-01-17 Asm Ip Holding B.V. Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
US11430640B2 (en) 2019-07-30 2022-08-30 Asm Ip Holding B.V. Substrate processing apparatus
US11443926B2 (en) 2019-07-30 2022-09-13 Asm Ip Holding B.V. Substrate processing apparatus
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11876008B2 (en) 2019-07-31 2024-01-16 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11680839B2 (en) 2019-08-05 2023-06-20 Asm Ip Holding B.V. Liquid level sensor for a chemical source vessel
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
US11639548B2 (en) 2019-08-21 2023-05-02 Asm Ip Holding B.V. Film-forming material mixed-gas forming device and film forming device
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11594450B2 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Method for forming a structure with a hole
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
US12040229B2 (en) 2019-08-22 2024-07-16 Asm Ip Holding B.V. Method for forming a structure with a hole
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
US11827978B2 (en) 2019-08-23 2023-11-28 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11527400B2 (en) 2019-08-23 2022-12-13 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US12033849B2 (en) 2019-08-23 2024-07-09 Asm Ip Holding B.V. Method for depositing silicon oxide film having improved quality by PEALD using bis(diethylamino)silane
US11898242B2 (en) 2019-08-23 2024-02-13 Asm Ip Holding B.V. Methods for forming a polycrystalline molybdenum film over a surface of a substrate and related structures including a polycrystalline molybdenum film
US11495459B2 (en) 2019-09-04 2022-11-08 Asm Ip Holding B.V. Methods for selective deposition using a sacrificial capping layer
US11823876B2 (en) 2019-09-05 2023-11-21 Asm Ip Holding B.V. Substrate processing apparatus
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
US11610774B2 (en) 2019-10-02 2023-03-21 Asm Ip Holding B.V. Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US12006572B2 (en) 2019-10-08 2024-06-11 Asm Ip Holding B.V. Reactor system including a gas distribution assembly for use with activated species and method of using same
US11339476B2 (en) 2019-10-08 2022-05-24 Asm Ip Holding B.V. Substrate processing device having connection plates, substrate processing method
US11735422B2 (en) 2019-10-10 2023-08-22 Asm Ip Holding B.V. Method of forming a photoresist underlayer and structure including same
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
US11637011B2 (en) 2019-10-16 2023-04-25 Asm Ip Holding B.V. Method of topology-selective film formation of silicon oxide
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
US11315794B2 (en) 2019-10-21 2022-04-26 Asm Ip Holding B.V. Apparatus and methods for selectively etching films
US11996292B2 (en) 2019-10-25 2024-05-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11594600B2 (en) 2019-11-05 2023-02-28 Asm Ip Holding B.V. Structures with doped semiconductor layers and methods and systems for forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
US11626316B2 (en) 2019-11-20 2023-04-11 Asm Ip Holding B.V. Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11915929B2 (en) 2019-11-26 2024-02-27 Asm Ip Holding B.V. Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11401605B2 (en) 2019-11-26 2022-08-02 Asm Ip Holding B.V. Substrate processing apparatus
US11646184B2 (en) 2019-11-29 2023-05-09 Asm Ip Holding B.V. Substrate processing apparatus
US11923181B2 (en) 2019-11-29 2024-03-05 Asm Ip Holding B.V. Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en) 2019-12-02 2024-03-12 Asm Ip Holding B.V. Substrate processing apparatus having electrostatic chuck and substrate processing method
US11840761B2 (en) 2019-12-04 2023-12-12 Asm Ip Holding B.V. Substrate processing apparatus
US11885013B2 (en) 2019-12-17 2024-01-30 Asm Ip Holding B.V. Method of forming vanadium nitride layer and structure including the vanadium nitride layer
US12119220B2 (en) 2019-12-19 2024-10-15 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11976359B2 (en) 2020-01-06 2024-05-07 Asm Ip Holding B.V. Gas supply assembly, components thereof, and reactor system including same
US12033885B2 (en) 2020-01-06 2024-07-09 Asm Ip Holding B.V. Channeled lift pin
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
US12125700B2 (en) 2020-01-16 2024-10-22 Asm Ip Holding B.V. Method of forming high aspect ratio features
US11551912B2 (en) 2020-01-20 2023-01-10 Asm Ip Holding B.V. Method of forming thin film and method of modifying surface of thin film
US11521851B2 (en) 2020-02-03 2022-12-06 Asm Ip Holding B.V. Method of forming structures including a vanadium or indium layer
US11828707B2 (en) 2020-02-04 2023-11-28 Asm Ip Holding B.V. Method and apparatus for transmittance measurements of large articles
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11986868B2 (en) 2020-02-28 2024-05-21 Asm Ip Holding B.V. System dedicated for parts cleaning
US11488854B2 (en) 2020-03-11 2022-11-01 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
US11837494B2 (en) 2020-03-11 2023-12-05 Asm Ip Holding B.V. Substrate handling device with adjustable joints
US11961741B2 (en) 2020-03-12 2024-04-16 Asm Ip Holding B.V. Method for fabricating layer structure having target topological profile
US11823866B2 (en) 2020-04-02 2023-11-21 Asm Ip Holding B.V. Thin film forming method
US11830738B2 (en) 2020-04-03 2023-11-28 Asm Ip Holding B.V. Method for forming barrier layer and method for manufacturing semiconductor device
US11437241B2 (en) 2020-04-08 2022-09-06 Asm Ip Holding B.V. Apparatus and methods for selectively etching silicon oxide films
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US12087586B2 (en) 2020-04-15 2024-09-10 Asm Ip Holding B.V. Method of forming chromium nitride layer and structure including the chromium nitride layer
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
US12130084B2 (en) 2020-04-24 2024-10-29 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11530876B2 (en) 2020-04-24 2022-12-20 Asm Ip Holding B.V. Vertical batch furnace assembly comprising a cooling gas supply
US11887857B2 (en) 2020-04-24 2024-01-30 Asm Ip Holding B.V. Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11959168B2 (en) 2020-04-29 2024-04-16 Asm Ip Holding B.V. Solid source precursor vessel
US11515187B2 (en) 2020-05-01 2022-11-29 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11798830B2 (en) 2020-05-01 2023-10-24 Asm Ip Holding B.V. Fast FOUP swapping with a FOUP handler
US11626308B2 (en) 2020-05-13 2023-04-11 Asm Ip Holding B.V. Laser alignment fixture for a reactor system
US12057314B2 (en) 2020-05-15 2024-08-06 Asm Ip Holding B.V. Methods for silicon germanium uniformity control using multiple precursors
US11804364B2 (en) 2020-05-19 2023-10-31 Asm Ip Holding B.V. Substrate processing apparatus
US11705333B2 (en) 2020-05-21 2023-07-18 Asm Ip Holding B.V. Structures including multiple carbon layers and methods of forming and using same
US11987881B2 (en) 2020-05-22 2024-05-21 Asm Ip Holding B.V. Apparatus for depositing thin films using hydrogen peroxide
US11767589B2 (en) 2020-05-29 2023-09-26 Asm Ip Holding B.V. Substrate processing device
US12106944B2 (en) 2020-06-02 2024-10-01 Asm Ip Holding B.V. Rotating substrate support
US11646204B2 (en) 2020-06-24 2023-05-09 Asm Ip Holding B.V. Method for forming a layer provided with silicon
US11658035B2 (en) 2020-06-30 2023-05-23 Asm Ip Holding B.V. Substrate processing method
US12020934B2 (en) 2020-07-08 2024-06-25 Asm Ip Holding B.V. Substrate processing method
US11644758B2 (en) 2020-07-17 2023-05-09 Asm Ip Holding B.V. Structures and methods for use in photolithography
US12055863B2 (en) 2020-07-17 2024-08-06 Asm Ip Holding B.V. Structures and methods for use in photolithography
US11674220B2 (en) 2020-07-20 2023-06-13 Asm Ip Holding B.V. Method for depositing molybdenum layers using an underlayer
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US11725280B2 (en) 2020-08-26 2023-08-15 Asm Ip Holding B.V. Method for forming metal silicon oxide and metal silicon oxynitride layers
US12074022B2 (en) 2020-08-27 2024-08-27 Asm Ip Holding B.V. Method and system for forming patterned structures using multiple patterning process
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
US12107005B2 (en) 2020-10-06 2024-10-01 Asm Ip Holding B.V. Deposition method and an apparatus for depositing a silicon-containing material
US12051567B2 (en) 2020-10-07 2024-07-30 Asm Ip Holding B.V. Gas supply unit and substrate processing apparatus including gas supply unit
US11827981B2 (en) 2020-10-14 2023-11-28 Asm Ip Holding B.V. Method of depositing material on stepped structure
US11873557B2 (en) 2020-10-22 2024-01-16 Asm Ip Holding B.V. Method of depositing vanadium metal
US11901179B2 (en) 2020-10-28 2024-02-13 Asm Ip Holding B.V. Method and device for depositing silicon onto substrates
US12027365B2 (en) 2020-11-24 2024-07-02 Asm Ip Holding B.V. Methods for filling a gap and related systems and devices
US11891696B2 (en) 2020-11-30 2024-02-06 Asm Ip Holding B.V. Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
US11885020B2 (en) 2020-12-22 2024-01-30 Asm Ip Holding B.V. Transition metal deposition method
US12129545B2 (en) 2020-12-22 2024-10-29 Asm Ip Holding B.V. Precursor capsule, a vessel and a method
US12131885B2 (en) 2020-12-22 2024-10-29 Asm Ip Holding B.V. Plasma treatment device having matching box
KR102312749B1 (ko) * 2021-03-12 2021-10-14 (주)마루엘앤씨 초전도 선재 제조를 위한 플라즈마 보조 인라인 시스템
KR102275410B1 (ko) * 2021-03-12 2021-07-09 (주)마루엘앤씨 초전도 선재 제조를 위한 플라즈마 보조 반응성 동시 증착 시스템
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Also Published As

Publication number Publication date
KR102074346B1 (ko) 2020-02-06

Similar Documents

Publication Publication Date Title
KR20190032077A (ko) 리모트 플라즈마를 이용한 원자층 증착 시스템
KR102156795B1 (ko) 증착 장치
US20100006543A1 (en) Plasma processing apparatus, plasma processing method and storage medium
JP2015225856A (ja) ガス分配装置およびこれを備える基板処理装置
JP2016036020A (ja) 二次パージ対応ａｌｄシステムにおけるシャワーヘッド裏側の寄生プラズマを抑制するための方法及び装置
JP2006319301A (ja) 触媒化学気相蒸着装置
TWI697049B (zh) 批次式電漿基板處理裝置
TW200849336A (en) Apparatus and method for deposition over large area substrates
KR20150075362A (ko) 콘택트층의 형성 방법
JP2018095901A (ja) 基板処理装置
JP5977853B1 (ja) 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
US20060175304A1 (en) Method of forming layers on substrates using microwave energy and apparatus for performing the same
KR100377096B1 (ko) 개선된 샤워헤드를 구비한 반도체 제조장치
US10692717B2 (en) Minimization of carbon loss in ALD SiO2 deposition on hardmask films
CN109576675B (zh) 原子层沉积装置及方法
CN116705584A (zh) 批次型衬底处理装置
KR101596329B1 (ko) Vhf를 이용한 pe-ald 장치 및 방법
US20200149164A1 (en) Thermal metal chemical vapor deposition apparatus and process
US20230207291A1 (en) Dual pressure oxidation method for forming an oxide layer in a feature
US20230203656A1 (en) Gas supply unit and substrate processing apparatus including gas supply unit
KR20000038764A (ko) 반도체 웨이퍼의 박막증착용 가스주입장치
US10662522B1 (en) Thermal metal chemical vapor deposition process
CN109778139B (zh) 一种改善化学气相沉积腔室中加热器加热性能的方法及装置
TW202342806A (zh) 具有加熱噴頭的噴頭組件
TW202428926A (zh) 用於噴射氣體的設備、用於處理基板的設備及用於沉積薄膜的方法

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right