KR20190022101A - Light emitting device package and manufacture method, light source apparatus - Google Patents

Abstract

The present invention provides a semiconductor device capable of increasing light extraction efficiency and electrical characteristics and a manufacturing method thereof and a semiconductor device package and a manufacturing method thereof. According to an embodiment of the present invention, a light emitting device package comprises: first and second frames arranged to be separated from each other; a light emitting device arranged on the first and second frames and including first and second electrodes; a first bonding pad arranged between the first electrode and the first frame and electrically connected to the first electrode and the first frame; a second bonding pad arranged between the second electrode and the second frame and electrically connected to the second electrode and the second frame; and a coupling unit individually arranged between the first and second bonding pads and the first and second frames, wherein the coupling unit includes a first metal which includes at least one of Ag, Au and Cu and a second metal which includes Sn, and a percentage by mass of the first metal and the second metal can include a range of 4.5:2 to 5.5:2.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device package, a light emitting device package manufacturing method, and a light source device,

The present invention relates to a semiconductor device, a semiconductor device manufacturing method, a semiconductor device package, and a method of manufacturing a semiconductor device package.

A light emitting device package, a light emitting device package manufacturing method, and a light source device.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group II-VI compound semiconductor material can be used for a variety of applications such as red, Blue and ultraviolet rays can be realized. In addition, a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group-VI-VI compound semiconductor material can realize a white light source having high efficiency by using a fluorescent material or combining colors. Such a light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environment friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a Group III-V or Group-VI-VI compound semiconducting material, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. Further, such a light receiving element has advantages of fast response speed, safety, environmental friendliness and easy control of element materials, and can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diode (LED) lighting devices, automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

The light emitting device can be provided as a pn junction diode having a characteristic in which electric energy is converted into light energy by using a group III-V element or a group II-VI element in the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm. It is used for sterilizing and purifying in the wavelength band, short wavelength, Can be used.

 Ultraviolet rays can be divided into UV-A (315nm ~ 400nm), UV-B (280nm ~ 315nm) and UV-C (200nm ~ 280nm) in the long wavelength order. UV-A (315nm ~ 400nm) is applied in various fields such as UV curing for industrial use, curing of printing ink, exposure machine, discrimination of counterfeit, photocatalytic disinfection and special illumination (aquarium / ) Area is used for medical use, and UV-C (200nm ~ 280nm) area is applied to air purification, water purification, sterilization products and the like.

On the other hand, a semiconductor device capable of providing a high output has been requested, and a semiconductor device capable of increasing a power by applying a high power source has been studied.

In addition, studies are being made on a method for improving the light extraction efficiency of a semiconductor device and improving the light intensity at a package end in a semiconductor device package. Further, studies are being made on a method for improving the bonding strength between the pad portion of the package and the electrode of the semiconductor element in the semiconductor element package.

In addition, studies have been made on a method for reducing the manufacturing cost and improving the manufacturing yield by improving the process efficiency and changing the structure in the semiconductor device package.

On the other hand, a bonding pad can be used for electrical connection between the electrode of the semiconductor element and the pad portion of the package. At this time, there is a demand for a method of electrically connecting a semiconductor element and a pad portion by providing a small pressure at a low temperature and providing a stable bonding force.

The embodiments can provide a semiconductor device, a semiconductor device manufacturing method, a semiconductor device package, and a semiconductor device package manufacturing method capable of improving light extraction efficiency and electrical characteristics.

Embodiments can provide a semiconductor device, a semiconductor device manufacturing method, a semiconductor device package, and a method of manufacturing a semiconductor device package, wherein stable bonding can be performed at a low temperature.

The embodiments are directed to a semiconductor device in which first and second bonding pads corresponding to first and second electrodes of a semiconductor device are formed on respective frames and then bonded by a reflow method, a method of manufacturing a semiconductor device, A device package manufacturing method is provided.

An embodiment provides a semiconductor device package or a light emitting device package having a semiconductor element or a light emitting element and a method of manufacturing the same.

Embodiments relate to a semiconductor device, a semiconductor device manufacturing method, a semiconductor device package, a semiconductor device, and a semiconductor device, which can prevent a re-melting phenomenon from occurring in a bonding region of a semiconductor device package in a process of re- Thereby providing a device package manufacturing method.

A light emitting device package according to an embodiment includes first and second frames spaced apart from each other; A body between the first frame and the second frame; A light emitting element disposed on the first and second frames, the light emitting element including a first electrode and a second electrode; A first bonding pad disposed between the first electrode and the first frame and electrically connected to the first electrode and the first frame; A second bonding pad disposed between the second electrode and the second frame and electrically connected to the second electrode and the second frame; And a joining portion disposed between the first and second bonding pads and the first and second frames, respectively, wherein the joining portion includes a first metal containing at least one of Ag, Au, and Cu, 2 metal, wherein the mass percentages of the first metal and the second metal may range from 4.5: 2 to 5.5: 2.

According to an embodiment of the present invention, the bonding portion comprises an intermetallic compound, and the intermetallic compound may be any one of Ag-Sn compound, Ag-Au-Sn compound, Au-Sn compound, and Cu- have.

According to the embodiment, the first and second bonding pads include a Cu layer in the lowest layer, and the bonding portion may be formed of a compound with a part of the Cu material of the first and second bonding pads.

According to an embodiment of the present invention, the lower surface of the engaging portion is disposed lower than the upper surface of the body and may have a width smaller than an interval between the first and second frames.

According to an embodiment, there is provided a package comprising: a package body disposed on the first and second frames; Wherein the first and second bonding regions of the first and second frames are exposed on the bottom of the cavity, and the first and second bonding regions of the first and second frames are exposed on the bottom of the cavity, The first and second bonding regions of the light emitting device correspond to the first and second electrodes of the light emitting device, and the coupling unit may be connected to the first and second bonding regions.

According to an embodiment of the present invention, the lower surface of the coupling portion may have an area larger than that of the first and second bonding regions and may be in contact with the upper surface of the body.

According to an embodiment of the present invention, the light emitting device may include at least one of a resin adhesive between the light emitting device and the body, and a recessed recess in the body disposed below the light emitting device.

According to an embodiment of the present invention, the light emitting device may have a substrate on the top and a light emitting structure below the substrate, and may be disposed on the first and second frames as a flip chip.

According to an embodiment, the first and second frames include a base layer and an adhesive layer on the base layer, and the engaging portion may be in contact with or not in contact with the base layer.

According to the semiconductor device, the semiconductor device manufacturing method, the semiconductor device package, and the semiconductor device package manufacturing method according to the embodiments, there is an advantage that the light extraction efficiency, electrical characteristics and reliability can be improved.

According to the semiconductor device, the semiconductor device manufacturing method, the semiconductor device package, and the semiconductor device package manufacturing method according to the embodiments, stable bonding can be performed by providing a small pressure at a low temperature.

According to the semiconductor device, the semiconductor device manufacturing method, the semiconductor device package, and the semiconductor device package manufacturing method according to the embodiments, the solder is not used in the process of mounting the semiconductor device in the semiconductor device package, Can be reduced.

According to the semiconductor device, the semiconductor device manufacturing method, the semiconductor device package, and the semiconductor device package manufacturing method according to the embodiments, the bonding area between the semiconductor device package and the semiconductor device is remelted (re there is an advantage that the phenomenon of -melting can be prevented.

1 is a side sectional view showing a light emitting device package according to an embodiment.
FIG. 2 is a view illustrating an example of exposure of a bonding region of the first and second frames, FIG. 3 is a cross-sectional view of the first and second bonding regions of the light emitting device package of FIG. And FIGS. 4 to 8 are views for explaining the bonding process of the light emitting device of FIG. 1 and the process of forming the molding part.
9 is a view showing bonding of the first and second bonding pads and the first and second electrodes of the light emitting device in the light emitting device package according to the embodiment.
FIG. 10 is a view showing a bonding portion having an intermetallic compound layer after bonding of the first and second bonding pads of FIG. 9 and the first and second electrodes of the light emitting device.
11 is a plan view showing a light emitting device of a light emitting device package according to an embodiment.
12 is a side sectional view of the CC line of the light emitting device package of Fig.
13 is a first modification of the light emitting device package of Fig.
14 is a second modification of the light emitting device package of Fig.
15 is a third modification of the light emitting device package of Fig.
16 is a fourth modification of the light emitting device package of Fig.
17 is a fifth modification of the light emitting device package of Fig.
18 is an example of a light emitting module or light source device having the light emitting device package of Fig.

Hereinafter, embodiments will be described with reference to the accompanying drawings. In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Further, the description of the upper, lower, or lower layers of each layer will be described with reference to the drawings.

Hereinafter, a semiconductor device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The semiconductor device of the semiconductor device package may include a light emitting device that emits light of an ultraviolet ray, an infrared ray, or a visible ray. Hereinafter, a case where a light emitting device is applied as an example of a semiconductor device will be described, and a package or a light source device to which the light emitting device is applied includes a non-light emitting device such as a zener diode or a sensing device for monitoring wavelength or heat .

FIG. 1 is a side sectional view of a light emitting device package according to an embodiment, FIG. 2 is a view illustrating an example of exposure of first and second frames in the light emitting device package in FIG. 1, , And the first and second bonding pads are disposed on two frames.

1 to 3, the light emitting device package 100 according to the embodiment may include a body 115 and a device 151 on the body 115. The body 115 may be coupled to the plurality of frames 121 and 131. At least one or both of the plurality of frames 121 and 131 may include coupling portions 120 and 130 connected to the device 151. The device 151 may include a light emitting device, a semiconductor device, or another sensing or protecting device. For convenience of explanation, the light emitting device 151 will be described.

One or more of the frames 121 and 131 may be a conductive material. The plurality of frames 121 and 131 may include first and second frames 121 and 131 spaced apart from each other. At least one or two of the plurality of frames 121 and 131 may be electrically connected to the light emitting device 151. The first and second frames 121 and 131 may be spaced apart from each other in a first direction and the body 115 may be disposed in a direction perpendicular to the first direction.

The package body 110 may be disposed on the frames 121 and 131 and the body 115. The package body 110 may include the body 115 or may be formed of a separate material. The body 115 is disposed between the first and second frames 121 and 131. The first and second frames 121 and 131 may be insulated from each other through the body 113 and may be physically separated from each other .

The body 115 may be made of a resin material or an insulating material. The body 115 may be formed of, for example, polyphthalamide (PPA), polychlorophenyl (PCT), liquid crystal polymer (LCP), polyamide 9T, silicone, epoxy molding compound (SMC), ceramics, photo sensitive glass (PSG), sapphire (Al ₂ O ₃ ), and the like. In addition, the body 115 may include a high refractive index filler such as TiO ₂ and SiO ₂ as an epoxy material. The body 115 may be made of a reflective resin. As another example, the body 115 may be a transparent or non-transparent material. The body 115 may be a ceramic material. The body 115 may be the same material as the package body 110 or may be made of another material. The package body 110 may be a reflective material or a transparent or non-transparent material.

The first frame 121 and the second frame 131 may be separated from each other by a body 115. The body 115 may be formed of an insulating material as an electrode separating member when the first frame 121 and the second frame 131 are conductive or electrodes.

The body 115 may include a cavity 112. The upper part of the package body 110 may be opened in the cavity 112 and a part of the first frame 121 and the second frame 131 may be exposed. A part of the first frame 121 and the second frame 131 may be exposed to the bottom of the cavity 112. For example, the bonding areas B1 and B2 of the first and second frames 121 and 131 As shown in FIG. 2, and may correspond to the light emitting device 151. The cavity 112 may have one or a plurality of the light emitting devices 151 and a plurality of the bonding areas B1 and B2 may be arranged when the plurality of the light emitting devices 151 are disposed. The positions of the bonding areas B1 and B2 may be on the same plane or on different planes.

The body 115 may be exposed to the bottom 113 of the cavity 112. The side surface 116 of the cavity 112 may be a sloped surface or a vertical surface with respect to the bottom surface of the package 100 or may have a surface perpendicular to the sloped surface. The top view shape of the cavity 112 may include a circular shape, an elliptical shape, or a polygonal shape. The cavity 112 may have a smaller or smaller footprint or width than the top area or width.

The first frame 121 and the second frame 131 may be made of a conductive material, for example, a metal material. The first frame 121 and the second frame 131 may be formed of a metal such as platinum (Pt), titanium (Ti), nickel (Ni), copper (Cu), gold (Au), tantalum (Al), and silver (Ag), and may be a single layer or a multi-layer having different metal layers. The first and second frames 121 and 131 are base layers, in which a copper layer is disposed, and an aluminum layer is formed on the surface of the copper layer or a nickel layer / aluminum layer is laminated.

The first frame 121 may include a first extension 123 extending to a first side of the package body 110. The first extension 123 may protrude into a single or a plurality of . The opposite side of the first side of the package body 110 may be the second side. The first frame 121 may include at least one hole and / or groove in a region vertically overlapping the package body 110 to be coupled to the package body 110.

The second frame 131 may include a second extension 133 extending to a second side of the package body 110 and the second extension 133 may protrude into a single or a plurality of projections . The second frame 131 may include at least one hole and / or groove in a region overlapping the package body 110 in the vertical direction to be coupled to the package body 110.

The first and second frames 121 and 132 may have concave regions 122 and 132 at the top and a portion of the package body 110 or the body 115 may be disposed in the concave regions 122 and 132. A portion of the concave regions 122 and 132 may overlap with the cavity 112 in the vertical direction. The depth of the concave regions 122 and 132 may be in a range of 50% to 70% of the thickness of the first and second frames 121 and 131, and the bearing force or bonding force may be lowered if the depth is outside this range.

The thickness of the first frame 121 and the second frame 131 may be 220 탆 or less, for example, 180 탆 to 220 탆. The thickness of the injection process capable of providing crack free of the package body 115 is considered. The bottoms of the first and second frames 121 and 131 may be exposed on the lower surface of the package body 115.

The first and second frames 121 and 131 may have at least two layers. The first and second frames 121 and 131 may include a base layer 13 and an adhesive layer 14 on the base layer 13, as shown in FIG. The base layer 13 may be a Cu layer, and the adhesive layer 14 may be a Ni layer or a Ti layer. The first and second frames 121 and 131 may be further provided with an Ag layer on the surface of the adhesive layer 14 so that they can be used as a junction with a circuit board or as a surface protective layer. The base layer 13 may be in non-contact or in contact with the bonding portions 120 and 130 forming the intermetallic compound.

The light emitting device 151 may be formed of a compound semiconductor of Group II and VI elements or / and a compound semiconductor of Group III and V elements. For example, the light emitting device can selectively include a semiconductor device manufactured using a compound semiconductor of a series such as AlInGaN, InGaN, AlGaN, GaN, GaAs, InGaP, AllnGaP, InP and InGaAs. The light emitting device 151 may selectively emit light of blue, green, red, visible, and infrared wavelengths. 1, the light emitting device 151 includes a substrate 305, a light emitting structure 310 under the substrate 305, a first electrode P5 electrically connected to the light emitting structure 310, (P6). The first electrode (P5) may include a first bonding pad (373) at the bottom or a separate layer. The second electrode P6 may include a second bonding pad 371 at the bottom or may have a separate layer. The light emitting device 151 will be described in detail later.

The light emitting device 151 may be disposed in the cavity 112 and disposed on the first and second frames 121 and 131. The foot 151 may be disposed on the first bonding region B1 of the first frame 121 and the second bonding region B2 of the second frame 131 as shown in FIG.

The first bonding pad 373 of the light emitting device 151 may correspond to or face the first bonding region B1 of the first frame 121. [ The second bonding pad 371 of the light emitting device 151 may correspond to or face the second bonding region B2 of the second frame 131. [

The first and second bonding pads 373 and 371 may be formed as a lower layer of the first and second electrodes P5 and P6 and may be a single layer or a multilayer. 9, the first and second bonding pads 373 and 371 include an adhesive layer 41, a barrier layer 42 and a bonding layer 43. The adhesive layer 41 is Ni, and the barrier layer 42 May be a single layer or multiple layers including Ti, and the bonding layer 43 may include Cu. The thickness of the adhesive layer 41 and the barrier layer 42 may be in a range of 500 nm or less, for example, 100 nm to 500 nm, and may function as an adhesion and a barrier in such a thickness range.

The coupling portions 120 and 130 may be disposed between the electrodes P5 and P6 of the light emitting device 151 and the bonding regions B1 and B2 of the frames 121 and 131, respectively. The coupling portions 120 and 130 may be intermetallic compounds. The couplers 120 and 130 may include a first coupler 120 on the first bonding area B1 and a second coupler 130 on the second bonding area B2. The first coupling part 120 is disposed between the first bonding area B1 and the first electrode P5 and the second coupling part 130 is disposed between the second bonding area B2 and the second electrode P5. P6. The first coupling part 120 may be connected to the first bonding pad 373 of the first electrode P5 and the first frame 121. [ The second coupling unit 130 may be connected to the second bonding pad 371 of the second electrode P6 and the second frame 131. [

The intermetallic compound of the first and second coupling parts 120 and 130 may be formed of the same material, for example, a metal, a compound, or an alloy. The first and second coupling parts 120 and 130 may be made of a material having no lead (Pb). The first and second coupling portions 120 and 130 are formed of a compound with the base layer (13 in FIG. 9) of the first and second bonding regions B1 and B2 of the first and second frames 121 and 131, Can be contacted. The lower surfaces of the first and second coupling portions 120 and 130 may be disposed lower than the bottom 113 of the cavity 112 or may be in contact with the body 115.

The first and second couplers 120 and 130 may have at least two kinds of metals and the first metal may be at least one of gold (Au), copper (Cu), and silver (Ag) (Sn). The first and second coupling parts 120 and 130 may include any one of Ag-Sn based compound, Ag-Au-Sn based compound, Au-Sn based compound, Cu-Sn4 based compound and Au-Cu- . The second metal may form an intermetallic compound (IMC) with the bonding pads 371 and 373 and the metal layer provided on the frame. This is because the second metal must be capable of forming an intermetallic compound (IMC) with the frame as well as with the first metal, so that a stable bonding force can be provided between the light emitting device according to the embodiment and the bonding layer provided in the frame .

The amount of the first metal in the first and second coupling parts 120 and 130 may be greater than twice the amount of the second metal based on the weight percent (Wt%). This is because when the layer of the material constituting the coupling part (21, 23 in FIG. 4) is plated on the frames 121 and 131, the material formed by plating becomes porous compared to the material formed through the sputter, . ≪ / RTI > The amount of the second metal (e.g., Sn) may be less than 1/2 times the amount of the first metal (e.g., Ag) based on the mass percentage (Wt%). When the first metal and the second metal form an intermetallic compound (IMC) in the first and second coupling parts 120 and 130, the amount of Ag and the amount of Sn are 4.5: 2 to 5: Binding can proceed at a ratio of 5.5: 2. Further, since the atomic weight of Ag is 107.8682 and the atomic weight of Sn is 118.710, the binding can proceed at a ratio of Ag and Sn of, for example, 5: 2 on the basis of At%. When the ratio of the first metal (e.g., Ag) of the intermetallic compound forming the bonding portion to the second metal (e.g., Sn) is out of 4.5: 2 to 5.5: 2, the semiconductor device and the first and second frames Peeling may occur and the melting point of the intermetallic compound (IMC) may become too low, so that remelting may occur when the light emitting device package is mounted on a circuit board.

In addition, the upper and lower surfaces of the intermetallic compound (IMC) of the bonding portion may not be flat. Therefore, since the length of the surface of the coupling portion can be long, the coupling between the light emitting device and the first and second frames can be firmly established.

In addition, the Sn must be capable of forming an intermetallic compound (IMC) not only with the Ag but also with the metal layer provided on the frame to which the light emitting device is bonded. Accordingly, when the intermetallic compound (IMC) between the Sn and the Ag is formed, the amount of each layer should be selected so that the Sn can remain. This is because the Sn can form an intermetallic compound (IMC) with the frame as well as the Ag, so that a stable bonding force can be provided between the light emitting device and the metal layer on the frame.

Accordingly, when the first layer 21 having the second metal and the second layer 23 having the second metal are formed of a plating layer as shown in FIG. 4, the thickness of the first and second layers 21 and 23 May be in the range of 0.8 μm or more, for example, 0.8 μm to 1.5 μm. When the thickness is smaller than the above range, the bonding ability is lowered. If the thickness is larger than the above range, the improvement of the bonding ability may be insignificant. Remigration may occur when the package 100 is bonded to the circuit board 201.

2, through the plating process such as electroless plating and / or electrolytic plating to the bonding areas B1 and B2 exposed at the bottom of the cavity 112 as shown in FIG. 2, And bonding layers 125 and 135 are formed as shown in FIG. The bonding layers 125 and 135 may include a first layer 21 formed on each bonding region B1 and B2 and a second layer 23 on the first layer 21 as shown in FIG. . The laminated structure of the first layer 21 and the second layer 23 formed on the first bonding region B1 may be defined as a first bonding layer 125 and the second bonding layer 125 may be formed on the second bonding region B2. The first layer 21 / the second layer 23 may be defined as a second bonding layer 135. 9, the first layer 21 is disposed between the adhesive layer 14 and the second layer 23 of the first and second frames 121 and 131 and may include a second metal (e.g., Sn) And the second layer 23 is disposed between the first and second bonding pads 371 and 373 and the first layer 21 and may include a first metal such as Ag.

In the first and second bonding layers 125 and 135, the first and second layers 21 and 23 have a first metal content of 90 wt% or more, for example, 90 to 98 wt% % Or less, for example, 2 to 10 wt%. The first metal (e.g., Ag) and the second metal (e.g., Sn) may be formed in a ratio of 9: 1 to 49: 1 based on the mass percentage (wt%) in the bonding layers 125 and 135. If the first metal (for example, Ag) is in the above range, the strength may be lowered and the moisture absorption preventing function may be deteriorated. If the first metal A re-melting may occur between the light emitting device and the light emitting device package. If the second metal (for example, Sn) is less than the above range, the intermetallic compound is not normally formed and the adhesive strength may be lowered. If the second metal is larger than the above range, the intermetallic compound may be remelted when bonded to the circuit board, as shown in FIG.

5 and 6, after the first and second bonding pads 371 and 373 of the light emitting device 151 are aligned on the first and second bonding layers 125 and 135, And may be pre-bonded. When the pre-bonded light emitting device package is subjected to an air reflow process, the first layer 21 and the second layer 23 are dissolved to form an intermetallic compound having a first metal and a second metal IMC (intermetallic compound) layers (120 and 130 in FIG. 1) may be formed as shown in FIGS. 1 and 9. The coupling portions 120 and 130 may connect the first electrode P5 to the first bonding region B1 and may connect the second electrode P6 to the second bonding region B2. The first coupling unit 120 connects the first electrode P5 of the light emitting device 100 and the first frame 121 and the second coupling unit 130 connects the light emitting device 100, The second electrode P6 of the second frame 131 and the second frame 131 of the second frame 131 are connected to each other. Since the first and second couplers 120 and 130 are dissolved by the air reflow process, the bottom surface area may be wider than the top surface area, and the bottom surface area may be wider than the first and second bonding areas B1 and B2 have. The first and second coupling parts 120 and 130 may be in contact with the bottom 113 of the cavity 112 made of the body material.

The pre-bonding process and the air reflow process may be bonded at a temperature of 230 DEG C or lower, for example, at a low temperature bonding. For example, although the solder bonding process of the comparative example generally proceeds at 280 ° C to 320 ° C, the prebonding process and the air reflow process may be performed at a temperature of 230 ° C or less. According to the embodiment, the pre-bonding step and the air reflow step may be performed at a temperature of 200 ° C or lower.

In order to perform the pre-bonding and the air reflow at a relatively low temperature, the metal scheme of the first and second bonding layers (125 and 135 in FIG. 6) And can be set to a percentage and a thickness, so that a low temperature bonded intermetallic compound layer can be provided.

9 and 10, a copper bonding layer 43, which is the lowermost layer of the first and second bonding pads 371 and 373, is bonded to the first and second bonding layers 125 and 135 ), And can be formed of a Cu-Sn4 based intermetallic compound layer. Part or all of the copper bonding layer 43 may be formed of an intermetallic compound by bonding between the metals of the first and second bonding layers 125 and 135. The metal of the bonding layer 43 of the first and second bonding pads 371 and 373 and the first and second metals of the first and second bonding layers 125 and 125 may be combined to form an Au-Cu-Sn compound .

9, the ratio of the thickness T1 of the bonding layer 43 of the first and second bonding pads 371 and 373 to the thickness T2 of the first and second bonding layers 125 and 135 is 0.8: 1 to 1.2 : ≪ / RTI > The thickness T1 of the bonding layer T1 is varied by the thickness T2 because the thickness T2 of the first and second bonding layers 125 and 135 is 0.8 μm or more and 0.8 to 1.5 μm, for example. . If the thickness T2 of the first and second bonding layers 125 and 135 is less than the above range, the bonding strength may deteriorate. If the thickness T2 is greater than the above range, remelting may occur.

10, the thickness T3 of the coupling portions 120 and 130 may be a thickness formed by an intermetallic compound and may be 1.5 m or less, for example, in a range of 0.5 m to 1.5 m, and the thickness T3 ), The bonding force between the light emitting element and the frame can be improved.

The bottom surface area of each of the coupling parts 120 and 130 may be greater than the top surface area of the first and second bonding areas B1 and B2 of the first and second frames 121 and 131, (B1, B2) can be improved.

FIG. 7 is a view for explaining an example in which a molding part is formed in a cavity after bonding the light emitting device according to the embodiment, and FIG. 8 is a cross-sectional view taken along the line B-B in FIG.

As shown in FIGS. 7 and 8, the molding part 181 may be disposed in the cavity 112. The molding part 181 may include a transparent resin material. The molding part 181 may include a material such as transparent silicone or epoxy. The molding part 181 may cover the light emitting device 151. The molding part 181 may transmit light emitted from the light emitting device 151. The molding material 181 may be a single layer or a multi-layer material. If the material is multi-layered, a resin material having a low refractive index may be disposed in the direction of the top surface of the molding part 181.

The molding part 181 may include a fluorescent material therein. The phosphor may include at least one of red, green, blue, and yellow phosphors.

The upper surface of the molding part 181 may include at least one of a horizontal plane, a concave curved surface, or a convex curved surface. An optical lens (not shown) may be disposed on the molding part 181, and the optical lens may adjust the directivity of the light emitted through the molding part 181.

The intermetallic compound of the joining portions 120 and 130 may include at least one of Cu _x Sn _y , Ag _x Sn _y , and Au _x Sn _y , where x is 0 <x <1, y = 1 -x, x> y can be satisfied. The material of the coupling portions 120 and 130 is formed in advance on the frames 121 and 131 as a plating layer and is then bonded to the light emitting device 151, thereby reducing the problem of defects due to use of the solder. Also, the area occupied by the coupling portions 120 and 130 can be minimized. For example, the coupling portions 120 and 130 may be disposed within a range of about 150% or less, for example, 80% to 150% of the bonding regions B1 and B2 based on the bonding regions B1 and B2.

FIG. 11 is a plan view showing a light emitting device of the light emitting device package according to the embodiment, and FIG. 12 is a side sectional view taken along the line C-C of the light emitting device package of FIG.

11, a first bonding pad 171 of the first electrode P5 and a second bonding pad 172 of the second electrode P6 are disposed apart from each other in one direction of the light emitting device 151 . One or a plurality of the first electrode units 342 connected to the first electrode P5 may extend in the first direction and overlap the second electrode P6 in the vertical direction. One or a plurality of second electrode units 341 connected to the second electrode P6 may extend in the first direction and may overlap with the first electrode P5 in the vertical direction. The first direction may be a longitudinal direction of the light emitting device, and may be a direction orthogonal to the second direction. The first and second electrodes P5 and P6 may have a long length in the second direction. In FIG. 11, the P region and the N region may be regions showing a via structure connected to different semiconductor layers. The electrode portions 341 and 342 can diffuse currents to all regions.

11 and 12, the light emitting device 151 may include a substrate 305 and a light emitting structure 310 disposed thereon. The substrate 305 can be removed. The substrate 305 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. For example, the substrate 305 may have a concave-convex pattern formed on its upper surface.

The light emitting structure 310 may include a first conductive semiconductor layer 311, an active layer 312, and a second conductive semiconductor layer 313. The active layer 312 may be disposed between the first conductive semiconductor layer 311 and the second conductive semiconductor layer 313. For example, the active layer 312 may be disposed on the first conductive semiconductor layer 311, and the second conductive semiconductor layer 313 may be disposed on the active layer 312.

The first conductivity type semiconductor layer 311 may be provided as an n-type semiconductor layer, and the second conductivity type semiconductor layer 313 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity type semiconductor layer 311 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 313 may be provided as an n-type semiconductor layer. Hereinafter, for convenience of description, description will be made on the case where the first conductive type semiconductor layer 311 is provided as an n-type semiconductor layer and the second conductive type semiconductor layer 313 is provided as a p-type semiconductor layer .

The light emitting structure 310 may be provided as a compound semiconductor. The light emitting structure 310 may be formed of, for example, a Group 2-VI-VI or Group III-V compound semiconductor. For example, the light emitting structure 310 may include at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As) .

The first and second conductivity type semiconductor layers 311 and 313 may be formed of, for example, a Group 2-VI compound semiconductor or a Group 3B-5 compound semiconductor. For example, the first and second conductivity type semiconductor layers 311 and 313 may be In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + It may be provided in a semiconductor material having a composition formula _y P (0≤x≤1, 0≤y≤1) _- having a composition formula of a semiconductor material, or _{(Al x Ga 1 -x) y} in 1. For example, the first and second conductivity type semiconductor layers 311 and 313 may be formed of a group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, Can be selected. The first conductive semiconductor layer 311 may be doped with an n-type dopant selected from the group consisting of Si, Ge, Sn, Se, and Te. The second conductive semiconductor layer 313 may be doped with a p-type dopant selected from the group consisting of Mg, Zn, Ca, Sr, and Ba.

The active layer 312 may be formed of, for example, a Group 2-VI compound semiconductor or a Group 3B-5 compound semiconductor. For example, the active layer 312 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + Al _x Ga _{1 -x} ) _y In _{1 -y} P (0? _X? 1, 0 _{? Y?} 1). For example, the active layer 312 may be selected from the group including GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, AlInP, GaInP, For example, the active layer 312 may be provided in a multi-well structure, and may include a plurality of barrier layers and a plurality of well layers.

The current diffusion layer 320 and the ohmic contact layer 330 or the transparent contact layer may be disposed on the light emitting structure 310. The current diffusion layer 320 and the ohmic contact layer 330 or the transparent contact layer may increase current diffusion to increase light output. The current diffusion layer 320 may be provided, for example, with an oxide or a nitride. The horizontal width of the current diffusion layer 320 may be greater than the horizontal width of the second electrode P6 disposed above. Accordingly, the current diffusion layer 320 can improve the luminous flux by preventing the current concentration at the lower side of the second electrode P6 and improving the electrical reliability.

In addition, the ohmic contact layer 330 or the transparent contact layer may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride. The ohmic contact layer 330 or the transparent contact layer may include a light-transmitting material. For example, the ohmic contact layer 330 or the transparent contact layer may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide) IGTO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au , Ni / IrOx / Au / ITO, Pt, Ni, Au, Rh and Pd, and may be formed as a single layer or a multilayer.

The second electrode P6 may have a second electrode portion 341 electrically connected to the first conductivity type semiconductor layer 311 and the second electrode portion 342 may have a second electrode portion 342, May be disposed on the exposed surface of the first conductive type semiconductor layer 311 after part of the active layer 312 and a part of the active layer 312 are removed.

The first electrode P5 may have a first electrode portion 342 electrically connected to the second conductive type semiconductor layer 313 and the first electrode portion 342 may include a first electrode portion 342, (Not shown). The current diffusion layer 320 may be disposed between the first electrode portion 342 and the second conductive type semiconductor layer 313.

The first and second electrode units 342 and 341 may have a single-layer structure or a multi-layer structure. For example, the first and second electrode units 342 and 341 may be ohmic electrodes. For example, the first and second electrode units 342 and 341 may be formed of a material selected from the group consisting of ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf or an alloy of two or more of them.

The passivation layer 350 may be disposed on the first and second electrode portions 342 and 341. The passivation layer 350 may have openings h1 and h2 to expose the first and second electrode units 342 and 341. For example, the passivation layer 350 may be formed of an insulating material. For example, the passivation layer 350 may include SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ And at least one material selected from the group consisting of:

The insulating reflective layers 361 and 362 may be disposed on the protective layer 350. The insulating reflection layers 361 and 361 may be part of the first and second electrodes P5 and P6. The insulating reflective layers 361 and 362 may have openings h3 and h4 and may expose the first electrode portion 342 and the second electrode portion 341. The insulating reflective layers 361 and 362 may be DBR Reflector layer or an ODR (Omni Directional Reflector) layer, and may be provided with TiO ₂ and SiO ₂ or Ta ₂ O ₅ and SiO ₂ , for example. The insulating semiconductor layers 361 and 362 are formed around the electrodes to reflect light emitted from the active layer 312 of the light emitting structure 310 to minimize light absorption and improve light intensity.

The first connection electrode 362 may be connected to the first electrode unit 342 through the opening h3 and the second connection electrode 361 may be connected to the second electrode unit 341 through the opening h4 . The first and second connection electrodes 361 and 362 may be formed of a metal such as Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag, Au, Layer or multilayer using at least one material or alloy selected from Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au and Ni / IrOx / Au / ITO.

A first bonding pad 373 may be disposed on the first connection electrode 362 and a second bonding pad 371 may be disposed on the second connection electrode 361. The light emitting device according to the embodiment may be connected to an external power source through a flip chip bonding method through the first and second bonding pads 373 and 371. For example, since the first bonding pad 371 and the second bonding pad 373 are formed of Ni / Ti / Cu or the like, the bonding process can be performed stably.

When the light emitting device according to the embodiment is mounted by a flip chip bonding method and is implemented as a package, the light provided from the light emitting structure 310 may be emitted through the substrate 305. In addition, according to the light emitting device according to the embodiment, since the first bonding pad 371 and the second bonding pad 373 having a large area can be directly bonded to the circuit board that provides power, the flip chip bonding process It can be done easily and stably.

FIG. 13 is a first modification of the light emitting device package of FIG. 1, and the light emitting device package may include a recess 115A in a body 115 disposed below the light emitting device 151. FIG. The recess 115A may be disposed in a region overlapping the light emitting device 151. [ The recess 115A may be formed at a predetermined depth, for example, a depth smaller than the thickness of the body 115, from the upper surface of the body 115. The depth of the recess 115A may be determined in consideration of the adhesive force of the resin material disposed between the body 115 and the light emitting device 151. [ The resin material may be a material of the molding part 181 or a resin material having reflection and / or heat radiation characteristics. The length of the recess 115A may be the direction between the first and second frames 121 and 131 and may be smaller or larger than the length of the light emitting device 151.

The depth of the recess 115A is set so that cracks are not generated in the semiconductor device package 100 due to the stable strength of the body 113 and / or the heat emitted from the light emitting device 151 Can be determined. The recess 115A may provide a suitable space under which an under-filling process may be performed under the light emitting device 151. [ Here, the underfilling process may be a process of mounting the light emitting device 151 on the package body 110 and then disposing the adhesive (118 of FIG. 15) under the light emitting device 151, In the step of mounting the light emitting device 151 on the package body 110, the adhesive may be disposed in the recess 115A for mounting through the adhesive, and then the light emitting device 151 may be disposed.

14 is a second modification of the light emitting device package of FIG. 1. The light emitting device package may include a through hole 115B in a body 115 disposed below the light emitting device 151. FIG. The through hole 115B may be a hole penetrating from the upper surface to the lower surface of the body 115. [ The width of the through hole 115B in the first direction may be smaller than the width of the body 115 and the length in the second direction may be smaller or larger than the length of the light emitting element 151 in the second direction. A part of the molding part 181 may be disposed in the through hole 115B, or a part of the adhesive shown in FIGS. 15 and 16 may be disposed. When the through hole 115B is formed, a sheet adhered to the lower portion may be attached, and then the molding portion 181 may be molded or an adhesive may be molded. The adhesive may be disposed in a region between the light emitting device 151 and the body 115, and may be disposed through the through hole 181. The adhesive may be a reflective or / and heat-releasing resin.

FIG. 15 is a third modification of the light emitting device package of FIG. 1, in which the light emitting device package includes an adhesive 118 disposed under the light emitting device 151. The adhesive 118 may be in contact with the light emitting device 151. The adhesive 118 may include at least one of a resin material, a hybrid material including an epoxy-based material, a silicone-based material, an epoxy-based material, and a silicon-based material . The adhesive 118 may be a reflective material that reflects light emitted from the light emitting device 151 and / or a heat-dissipating resin. For example, a high refractive index filler such as Al ₂ O ₃ , SiO ₂ , or TiO ₂ may be used Or may comprise a white silicone.

The adhesive 118 may be disposed between the light emitting device 151 and the body 115. The adhesive 118 may be disposed between the light emitting device 151 and the first and second frames 121 and 131. The adhesive 118 may contact at least one of the light emitting device 151 and the first and second coupling parts 120 and 130 to reflect light incident from the light emitting device 151, It is possible to conduct the heat generated from the semiconductor device. The thermal conductivity of the adhesive 118 is higher than the thermal conductivity of the molding part 181 so that the heat generated from the light emitting device 151 is conducted through the first and second frames 121 and 131, . The adhesive 118 may be in contact with the molding part 181.

16 is a fourth modification of the light emitting device package of FIGS. 1 and 15, wherein the light emitting device package includes an adhesive 118 disposed below the light emitting device 151 and a recess 115A of the body 115 .

The adhesive 118 may be in contact with the light emitting device 151. The adhesive 118 may include at least one of a resin material, a hybrid material including an epoxy-based material, a silicone-based material, an epoxy-based material, and a silicon-based material . The adhesive 118 may be a reflective material reflecting light emitted from the light emitting device 151 and may be a resin containing a high refractive index filler such as Al ₂ O ₃ , SiO ₂ , TiO ₂ , And may include white silicone.

The adhesive 118 may be disposed between the light emitting device 151 and the body 115. The adhesive 118 may be disposed between the light emitting device 151 and the first and second frames 121 and 131. The adhesive 118 may contact at least one of the light emitting device 151 and the first and second coupling parts 120 and 130 to reflect light incident from the light emitting device 151, It is possible to conduct the heat generated from the semiconductor device. The thermal conductivity of the adhesive 118 is higher than the thermal conductivity of the molding part 181 so that the heat generated from the light emitting device 151 is conducted through the first and second frames 121 and 131, . The adhesive 118 may be in contact with the molding part 181.

The recess 115A may be formed at a predetermined depth, for example, a depth smaller than the thickness of the body 115, from the upper surface of the body 115. The depth of the recess 115A may be determined in consideration of the adhesive strength of the adhesive 118 disposed between the body 115 and the light emitting device 151. The depth of the recess 115A is set so that cracks are not generated in the semiconductor device package 100 due to the stable strength of the body 113 and / or the heat emitted from the light emitting device 151 Can be determined. The adhesive 118 may be a reflective or heat dissipative resin. The length of the recess 115A in the second direction may be smaller or larger than the length of the light emitting device 151. [ The width of the recess 115A in the first direction may be less than the width of the body 115 in the first direction. The recess 115A may provide a suitable space under the light emitting device 151 under which the underfill process may be performed using the adhesive 118. [ The adhesive 118 may be attached to the recess 115A to support the light emitting device 151 through the adhesive 118 in a process of mounting the light emitting device 151 on the package body 110, The light emitting device 151 can be disposed after the arrangement.

FIG. 17 is a fifth modification of the light emitting device package of FIG. 1, in which the light emitting device package includes a reflective portion 119 disposed around the lower portion of the light emitting device 151. The reflective portion 119 may be in contact with the light emitting device 151. The reflective portion 119 may be the same as the adhesive of FIG. 15, and a detailed description thereof will be omitted.

The reflective portion 119 is formed on a region between the light emitting device 151 and the body 115 and a region on the bottom 113 of the cavity 112 and a region on the side 116 of the cavity 112 And may be disposed in at least one or both of the arranged regions. The reflective portion 119 may extend along the side surface 116 of the cavity 112 and may be spaced from the upper end of the cavity 112. The reflective portion 119 may be disposed under the molding portion 181 without being exposed through the molding portion 181. [ Since the reflecting portion 119 is disposed on the side surface 116 and the bottom 113 of the cavity 112, the incident light can be effectively reflected. The reflective portion 119 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material . Also, as an example, when the reflective portion 119 includes a reflection function, the adhesive may include white silicone. A light diffusion function, and a heat radiation function. The reflector 119 may be a ceramic material such as a filler such as Al ₂ O ₃ , SiO ₂ , TiO ₂ , or a thermally conductive filler.

Fig. 18 shows an example of a light emitting module or light source device having a circuit board on which the light emitting device package of Fig. 1 is disposed.

Referring to FIG. 18, a light emitting device package 100 is disposed on a circuit board 201. The circuit board 201 may be arranged in a light unit such as a display device, a terminal, a vehicle lamp, and a lighting device. The circuit board 201 may include a circuit layer electrically connected to the light emitting device package 100. The circuit board 201 may include at least one of a resin-made PCB, a metal core PCB (MCPCB), a non-flexible PCB, and a flexible PCB (FPCB) Do not.

The third and fourth electrode pads 211 and 213 are disposed on the circuit board 201 and the third electrode pad 211 is electrically connected to the first frame 121 of the light emitting device package 100 and the conductive adhesive 221, And the fourth electrode pad 213 may be adhered to the second frame 131 of the light emitting device package 100 with a conductive adhesive agent 223. The conductive adhesive 221, 223 may include, for example, a solder paste. The light emitting device package 100 is mounted on the circuit board 201 at a low temperature by bonding the light emitting device 151 of the light emitting device package 100 to the frames 121, The problem of remelting that may occur when bonding is prevented, and the reliability of the light emitting device package can be improved. The light emitting device 151 in the light emitting device package 100 may emit light to five or six sides.

The light emitting device package or the light emitting unit according to the embodiment can be applied to the light source device. The light source device may be applied to a lamp such as a display device, a lighting device, a vehicle lamp such as a fog lamp, a car light, a turn signal, a brake, a tail light, a reverse light, an upward light, a down light, and a fog light.

The above light source device may include at least one of an optical sheet having an optical lens or a light guide plate in a light output area. An example of the light source device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, a light emitting module disposed in front of the reflector, An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, And may include a color filter disposed in front thereof. Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Further, the display device may have a structure in which light emitting elements emitting red, green and blue light are disposed, respectively, without including a color filter.

As another example of the light source device, the head lamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, A lens that refracts light forward, and a shade that reflects off a portion of the light that is reflected by the reflector and that is directed to the lens to provide the designer with a desired light distribution pattern.

The lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. Further, the light source device according to the embodiment may further include at least one of a member and a holder. The light source module may include the light emitting device package according to the embodiment.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention.

100: Light emitting device package
110: Body
112: cavity
121: First frame
131: Second frame
B1, B2: bonding area
151: Light emitting element
120,

Claims (10)

A first frame and a second frame spaced apart from each other;
A body between the first frame and the second frame;
A light emitting element disposed on the first and second frames, the light emitting element including a first electrode and a second electrode;
A first bonding pad disposed between the first electrode and the first frame and electrically connected to the first electrode and the first frame;
A second bonding pad disposed between the second electrode and the second frame and electrically connected to the second electrode and the second frame; And
And a coupling portion disposed between the first and second bonding pads and the first and second frames, respectively,
Wherein the coupling portion includes a first metal containing at least one of Ag, Au and Cu and a second metal containing Sn,
Wherein the mass percentage of the first metal and the second metal is in the range of 4.5: 2 to 5.5: 2. The method of claim 1, wherein the bonding portion comprises an intermetallic compound,
Wherein the intermetallic compound is any one of Ag-Sn-based compound, Ag-Au-Sn-based compound, Au-Sn-based compound, and Cu-Sn4-based compound. The method of claim 1, wherein the first and second bonding pads include a Cu layer on the lowermost layer,
Wherein the coupling portion is formed of a compound of a part of the Cu material of the first and second bonding pads. The light emitting device package according to claim 3, wherein the thickness of the coupling portion is 1.5 占 퐉 or less. The light emitting device package according to claim 1, wherein a lower surface of the coupling portion is disposed lower than an upper surface of the body, and has a width wider than a gap between the first and second frames. 6. The method according to any one of claims 1 to 5,
A package body disposed on the first and second frames;
And a cavity opened at an upper portion of the package body and in which the light emitting device is disposed,
The first and second bonding regions of the first and second frames are exposed at the bottom of the cavity,
The first and second bonding regions of the first and second frames correspond to the first and second electrodes of the light emitting device,
And the coupling portion is connected to the first and second bonding regions. The light emitting device package according to claim 6, wherein a lower surface of the coupling portion has an area larger than an area of the first and second bonding regions and contacts the upper surface of the body. The package of claim 6, further comprising at least one of a resin adhesive between the light emitting device and the body, and a concave recess in the body disposed below the light emitting device. The light emitting device package according to claim 6, wherein the light emitting device has a substrate on an upper portion and a light emitting structure below the substrate, and is arranged as a flip chip on the first and second frames. 7. The method of claim 6, wherein the first and second frames comprise a base layer and an adhesive layer on the base layer,
And the coupling portion is in contact with or not in contact with the base layer.

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