KR20180137237A - Phosphor for plant growth, light emitting device package and lighting apparatus comprising the same - Google Patents

Abstract

Embodiments relate to a phosphor for plant growth, and to a light emitting device package and a lighting apparatus comprising the same, and more specifically, to a phosphor for plant growth, capable of realizing a spectrum favorable to plant growth by including a compound represented by a specific formula, Ca_(1-x)AlSiN_3 : Eu_(2+x), to a light emitting device package and a lighting apparatus comprising the same.

Description

FIELD OF THE INVENTION The present invention relates to a phosphorescent phosphor for growing plants,

The present invention relates to a phosphor for plant growth, a light emitting device package including the same, and a lighting apparatus, and more particularly, to a phosphor for plant growth capable of realizing a spectrum favorable to the growth of plants, a light emitting device package including the same, and a lighting apparatus.

The light emitting device includes a light emitting diode (LED), and the light emitting diode is a device having electrical energy converted into light energy, and various colors can be realized by controlling the composition ratio of the compound semiconductor.

As the application range of an illumination device using a light emitting element as a light source is gradually widened, development in relation to the application of a light emitting element is also proceeding in the field of agriculture.

In particular, in order for the lighting device to be applied in the field of promoting the growth of green plants, it is necessary to analyze the spectrum absorbed by the green plants in photosynthesis.

FIG. 1 is a diagram showing the absorption spectrum of chlorophyll a and chlorophyll b, and FIG. 2 is a diagram showing a photosynthetic rate spectrum. 1 and 2, photosynthesis is mainly performed by light in the red light region and the blue light region in the visible light wavelength band, and the absorption spectrum of the red light and the blue light Is absorbed the most.

More specifically, chlorophyll a mainly absorbs blue light in the range of 410 nm to 435 nm and red light in the wavelength of 640 nm, and chlorophyll b mainly absorbs blue light of about 450 nm and red light of about 660 nm.

Conventionally, incandescent lamps, fluorescent lamps, and the like have been mainly used as a lighting device for growing plants. However, incandescent lamps have excellent color rendering properties and red wavelengths are strong but blue wavelengths are weak. Fluorescent lamps have poor color rendering properties and blue wavelengths are strong. There is this weak problem.

Accordingly, a light emitting diode having a combination of a blue chip and a red chip has been developed, but the red chip is weak at a high temperature condition, and the reliability is significantly lowered.

Therefore, development of a phosphor capable of realizing a spectrum absorbed in the photosynthesis of plants is urgent, and countermeasures are needed.

It is an object of the present invention to provide a plant growth fluorescent material capable of realizing a spectrum favorable to plant growth.

It is another object of the present invention to provide a plant-growing phosphor capable of improving the plant growth rate by enlarging the full width at half maximum.

It is an object of the present invention to provide a light emitting device package including the above-described phosphor and a lighting apparatus including the same.

The plant-growing phosphors of the examples may include a compound represented by the following formula (1).

[Chemical Formula 1]

Ca _{1 - x} AlSiN ₃ : Eu ^{2 +} _x

(Wherein x is 0.01? X? 0.5)

According to one embodiment, the emission center wavelength of the phosphor may be 650 nm or more and 670 nm or less.

According to one embodiment, the full width at half maximum of the phosphor may be 130 nm or more and 170 nm or less.

The plant growth light emitting device package of the embodiment includes a body portion, a cavity formed on the body portion, a light emitting element disposed in the cavity, a molding portion surrounding the light emitting element and disposed in the cavity, The first phosphor may include a compound represented by the following general formula (1).

[Chemical Formula 1]

Ca _{1 - x} AlSiN ₃ : Eu ^{2 +} _x

(Wherein x is 0.01? X? 0.5)

According to one embodiment, the emission center wavelength of the first phosphor may be 650 nm or more and 670 nm or less.

According to one embodiment, the molding unit may include a second phosphor that is excited by light emitted from the light emitting device to emit light in a green wavelength range.

According to one embodiment, the second phosphor may include a compound represented by the following general formula (2).

(2)

Lu _{3-y (} Al, Ga) ₅ O ₁₂ : Ce ³⁺ _y

(Wherein y is 0.01? Y? 0.5)

According to one embodiment, the emission center wavelength of the second phosphor may be 500 nm or more and 545 nm or less.

According to an embodiment, the first phosphor may be contained in an amount of 5 wt% or more and 15 wt% or less with respect to 100 wt% of the total amount of the first phosphor and the second phosphor, and the amount of the second phosphor may be 85 wt% or more and 95 wt% ≪ / RTI >

According to one embodiment, the total content of the first phosphor and the second phosphor may be 50 wt% or more and 70 wt% or less based on 100 wt% of the molding part.

According to one embodiment, the light emitting device may emit light in a blue or ultraviolet wavelength range.

According to one embodiment, the light emitting device may be an LED chip emitting blue light.

According to one embodiment, the light emitting device can emit light of 430 nm or more and 460 nm or less.

According to one embodiment, white light may be emitted.

The lighting device for plant growth of the embodiment includes a light emitting device package as a light source, the light emitting device package including a body portion, a cavity formed on the body portion, a light emitting element disposed in the cavity, And a first phosphor disposed on the molding part, wherein the first phosphor may include a compound represented by the following formula (1).

[Chemical Formula 1]

Ca _{1 - x} AlSiN ₃ : Eu ^{2 +} _x

(Wherein x is 0.01? X? 0.5)

According to one embodiment, the phosphor further comprises a second phosphor disposed on the molding part, and the second phosphor may include a compound represented by the following formula (2).

(2)

Lu _{3-y (} Al, Ga) ₅ O ₁₂ : Ce ³⁺ _y

(Wherein y is 0.01? Y? 0.5)

The phosphor for plant growth in the examples may contain a specific compound, thereby making it possible to realize a spectrum favorable to the photosynthesis of plants. Accordingly, when the plant-growing phosphor is used, it is effective for plant growth.

In addition, the plant-growing phosphors of the examples have a broad half width and a large overlapping area with the photosynthesis rate spectrum. Accordingly, when the plant-growing phosphor is used, the plant growth rate can be improved.

In addition, since the plant growth-use phosphor of the embodiment does not cause a defect even under a high temperature condition, it can be applied to a light emitting device package and the like, and the problem of reliability lowering can be prevented even when used at a high temperature.

The plant growth light emitting device package of the embodiment and the plant growth light apparatus of the embodiment include the plant growth fluorescent material of the above-described embodiment, so that a spectrum favorable for plant photosynthesis can be realized.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing absorption spectra of chlorophyll a and chlorophyll b;
2 is a diagram of the photosynthetic rate spectrum.
3 is a diagram showing the emission spectrum of the light emitting device package of the embodiment.
4 is a diagram showing the emission spectrum of the light emitting device package according to the embodiment and the spectrum (photosynthesis rate spectrum) of the reference example.
5 is a diagram showing the emission spectrum of the light emitting device package according to the comparative example and the spectrum (photosynthesis rate spectrum) of the reference example.
6 is a diagram illustrating an emission spectrum of a red LED chip included in a light emitting device package of a comparative example and an emission spectrum of a light emitting device package according to an embodiment.

In the description of the embodiments, it is described that each layer, film, electrode, plate or substrate, etc. is formed "on" or "under" of each layer, film, electrode, In this case, "on" and "under " all include being formed either directly or indirectly through another element.

In addition, the criteria for the top, side, or bottom of each component are described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Phosphor

The plant-growing phosphors of the examples may include a compound represented by the following formula (1).

[Chemical Formula 1]

Ca _{1 - x} AlSiN ₃ : Eu ^{2 +} _x

Wherein x is 0.01? X? 0.5.

As described above, in order to realize a spectrum favorable for plant photosynthesis in view of the absorption spectrum (see FIG. 1) and / or the photosynthetic rate spectrum (see FIG. 2) of chlorophyll a and chlorophyll b, There has been a problem in that a red shift is required even in the red wavelength region.

Accordingly, the plant growth-use phosphor of the embodiment may contain the compound represented by the above-mentioned formula (1).

FIG. 3 is a diagram of the emission spectrum of the light emitting device package of the embodiment. Referring to FIG. 3, the center wavelength of the light emitting phosphor of the plant growing phosphor of the embodiment may be 650 nm or more and 670 nm or less. As a result, the phosphor can be included in the light emitting device package to emit light in the red wavelength range and emit light in the long wavelength range even in the red wavelength range. Accordingly, it is possible to implement a similar spectrum in the red wavelength region of the absorption spectrum of chlorophyll a and chlorophyll b (see FIG. 1) or the photosynthesis rate spectrum (reference of FIG. 2 or FIG. 3).

According to one embodiment, the full width at half maximum of the phosphor may be 130 nm or more and 170 nm or less. That is, since the plant growth-use phosphor has a half width of the above-mentioned range, the area overlapping with the photosynthesis rate spectrum can be remarkably increased. Accordingly, when the plant-growing phosphor is used, the plant growth rate can be improved.

The plant growth-use phosphor of the embodiment may contain a compound represented by the general formula (1). The emission center wavelength of the phosphor may be 650 nm or more and 670 nm or less, and the emission spectrum half band width may be 130 nm or more and 170 nm or less.

Accordingly, it is possible to realize a red spectrum similar to the spectrum required for photosynthesis of plants, and thus it is suitable for plant growth, and thus can be applied to a light emitting device package and / or a lighting device for plant growth.

The light-

1 is a view showing an embodiment of a light emitting device package 200 for growing a plant.

The plant growth light emitting device package 200 of the embodiment includes a body portion 130, a cavity 150 formed on the body portion 130, and a light emitting element 110 disposed in the cavity, And a lead frame 142 or 144 for electrical connection with the light emitting device 110. [

The light emitting device 110 may be disposed on the bottom surface of the cavity in the cavity 150, and a molding portion may be disposed on the cavity surrounding the light emitting device.

The molding unit may include the first phosphor 100 of the above-described embodiment.

That is, on the molding part, a plant growth fluorescent material containing a compound represented by the following formula (1) may be disposed.

[Chemical Formula 1]

Ca _{1 - x} AlSiN ₃ : Eu ^{2 +} _x

Wherein x is 0.01? X? 0.5.

The body 130 may include a silicone material, a synthetic resin material, or a metal material. The body 130 may have a cavity 150 having an open top and a side surface and a bottom surface.

The cavity 150 may be formed in a cup shape or a concave shape. The side surface of the cavity 150 may be perpendicular or inclined to the bottom surface, and may vary in size and shape.

The shape of the cavity 150 viewed from the top may be circular, polygonal, elliptical, or the like, and may have a curved shape. However, the shapes are not limited thereto unless they depart from the object of the embodiment.

The body 130 may include a first lead frame 142 and a second lead frame 144 to be electrically connected to the light emitting device 110. In the case where the body portion 130 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the body portion 130 to prevent an electrical short between the first and second lead frames 142 and 144 have.

The first lead frame 142 and the second lead frame 144 are electrically separated from each other and can supply current to the light emitting device 110. [ The first lead frame 142 and the second lead frame 144 may reflect the light generated from the light emitting device 110 to increase the light efficiency. .

The light emitting device 110 may be disposed in the cavity 150 and disposed on the body 130 or on the first lead frame 142 or the second lead frame 144. The light emitting device 110 to be disposed may be a vertical light emitting device, a horizontal light emitting device, or the like.

The light emitting device 110 may be disposed on the first lead frame 142 and may be connected to the second lead frame 144 through the wire 146. However, And can be connected to the lead frame by a flip chip bonding or a die bonding method.

In the embodiment of the plant growth light emitting device package 200 of FIG. 1, the molding part may be formed by filling the cavity 150 by surrounding the light emitting device 110.

In addition, the molding part may include a second phosphor 160 and a resin in addition to the first phosphor 100 described above.

The molding unit may include a second phosphor 160 that is excited by light emitted from the light emitting device 110 to emit light in a green wavelength region.

According to one embodiment, the second phosphor 160 may include a compound represented by the following general formula (2).

(2)

Lu _{3-y (} Al, Ga) ₅ O ₁₂ : Ce ³⁺ _y

Y is 0.01? Y? 0.5.

The emission center wavelength of the second phosphor 160 may be 500 nm or more and 545 nm or less.

According to an embodiment, the first phosphor 100 may be included in an amount of 5 wt% to 15 wt% with respect to 100 wt% of the total amount of the first phosphor 100 and the second phosphor 160, 160) may be contained in an amount of 85 wt% or more and 95 wt% or less.

The molding part may include resin and phosphors 100 and 160, and may be disposed to surround the light emitting device 110 to protect the light emitting device 110.

The resin that can be mixed with the phosphor in the molding part may be in the form of any one of a silicone resin, an epoxy resin, and an acrylic resin or a mixture thereof.

According to one embodiment, the total content of the first phosphor 100 and the second phosphor 160 may be 50 wt% or more and 70 wt% or less based on 100 wt% of the molding part.

The phosphors 100 and 160 are excited by the light emitted from the light emitting device 110 to emit the wavelength-converted light.

For example, light emitted from the light emitting element 110 may be blue or ultraviolet wavelength region light.

According to one embodiment, the light emitting device 110 may be an LED chip emitting blue light.

In addition, according to one embodiment, the light emitting device 110 may emit light of 430 nm or more and 460 nm or less.

According to one embodiment, the light emitted from the light emitting device 110 may be blue or ultraviolet light, and the molding part of the light emitting device package is excited by the light emitted from the light emitting device 110 to emit red light. Emitting phosphor according to an embodiment of the present invention may include a first phosphor 100 that emits green light and a second phosphor 160 that emits green light by being excited by blue light. The plant growth light emitting device package may emit white light.

Although not shown in the drawing, the molding part may be arranged in a dome shape that fills the cavity 150 and is higher than the side part height of the cavity 150, and the light emission angle of the light emitting device package 200 for plant growth Or may be arranged in a modified dome shape for adjustment. The molding part may surround and protect the light emitting device 110 and function as a lens for changing a path of light emitted from the light emitting device 110.

The plant growth light emitting device package of the embodiment includes the plant growth fluorescent material of the above-described embodiment, and it is possible to realize a spectrum favorable to the photosynthesis of plants. Accordingly, when the plant growth light emitting device package is used, it may be advantageous for plant growth.

In addition, the emission spectrum of the plant growth light emitting device package of the embodiment has a wide half-width, so that the overlap region with the photosynthesis rate spectrum is wide. Accordingly, when the plant growth light emitting device package is used in a lighting device for plant growth, the plant growth rate can be improved.

In addition, the plant growth light emitting device package of the embodiment does not deteriorate the performance even under high temperature conditions, and reliability can be secured.

Light emitting element

2 illustrates an embodiment of the light emitting device 110. The light emitting device 110 includes a support substrate 70, a light emitting structure 20, an ohmic layer 40, and a first electrode 80 .

The light emitting structure 20 includes a first conductivity type semiconductor layer 22, an active layer 24, and a second conductivity type semiconductor layer 26.

The first conductive semiconductor layer 22 may be formed of a compound semiconductor such as a group-V, a-VI, or the like, and may be doped with a first conductive-type dopant. The first conductive semiconductor layer 22 is a semiconductor material having a composition formula of AlxInyGa (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? 1), AlGaN, GaN, InAlGaN , AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the first conductivity type semiconductor layer 22 is an n-type semiconductor layer, the first conductivity type dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 22 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

The active layer 24 is disposed between the first conductivity type semiconductor layer 22 and the second conductivity type semiconductor layer 26 and includes a single well structure, a multiple well structure, a single quantum well structure, A multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure.

InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaN / AlGaN / InGaN / InGaN / InGaN / AlGaAs, GaP (InGaP) / AlGaP, but the present invention is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

The second conductive semiconductor layer 26 may be formed of a semiconductor compound. The second conductive semiconductor layer 26 may be formed of a compound semiconductor such as a group-V or-VI group, and may be doped with a second conductive dopant. The second conductivity type semiconductor layer 26 may be a semiconductor material having a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? 1), AlGaN, GaN AlInN, For example, the second conductivity type semiconductor layer 26 may be made of AlxGa (1-x) N. For example, the second conductivity type semiconductor layer 26 may be formed of AlxGa (1-x) N.

When the second conductivity type semiconductor layer 26 is a p-type semiconductor layer, the second conductivity type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity type semiconductor layer 26 may be formed as a single layer or a multilayer, but is not limited thereto.

The surface of the first conductivity type semiconductor layer 22 forms a pattern, and the light extraction efficiency can be improved. A first electrode 80 may be disposed on the surface of the first conductivity type semiconductor layer 22 and a surface of the first conductivity type semiconductor layer 22 on which the first electrode 80 is disposed, May not form a pattern. The first electrode 80 may be formed as a single layer or a multilayer structure including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu) have.

A passivation layer 90 may be formed around the light emitting structure 20. The passivation layer 90 may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. For example, the passivation layer 90 may comprise a silicon oxide (SiO2) layer, an oxynitride layer, or an aluminum oxide layer.

A second electrode may be disposed under the light emitting structure 20, and the ohmic layer 40 and the reflective layer 50 may serve as a second electrode. GaN is disposed under the second conductive type semiconductor layer 26, so that current or holes can be smoothly supplied to the second conductive type semiconductor layer 26.

The ohmic layer 40 may have a thickness of about 200 Angstroms (A). The ohmic layer 40 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO) ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO nitride), AGZO (Al- Ga ZnO), IGZO , NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Au, and Hf. However, the present invention is not limited to these materials.

The reflective layer 50 may be formed of a metal such as molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium Metal layer. The reflective layer 50 effectively reflects light generated in the active layer 24, thereby greatly improving the light extraction efficiency of the semiconductor device.

The support substrate 70 may be formed of a conductive material such as a metal or a semiconductor material. A metal having excellent electrical conductivity or thermal conductivity can be used and a material having a high thermal conductivity (e.g., metal) can be formed so that heat generated during operation of the semiconductor device can be sufficiently diffused.

For example, the support substrate 70 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Au), a copper alloy (Cu Alloy), a nickel (Ni), a copper-tungsten (Cu-W), a carrier wafer (for example, GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, and Ga2O3), and the like.

The supporting substrate 70 may have a thickness of 50 to 200 mu m in order to have a mechanical strength sufficient to separate the entire nitride semiconductor into separate chips through a scribing process and a breaking process, Lt; RTI ID = 0.0 > um. ≪ / RTI >

The bonding layer 60 bonds the reflective layer 50 and the support substrate 70 and is formed of a metal such as Au, Sn, In, Al, Si, Ag, Nickel (Ni), and copper (Cu), or an alloy thereof.

The embodiment of the light emitting device 110 shown in FIG. 2 is an embodiment of the vertical light emitting device. In the embodiment of the light emitting device package 200 shown in FIG. 1, the vertical light emitting device shown in FIG. A light emitting device, and a flip chip type light emitting device may be disposed. In this case, the light emitting device 110 may emit light in a blue or ultraviolet wavelength region.

According to one embodiment, the light emitting device 110 may be an LED chip that emits blue light.

More specifically, the light emitting device 110 can emit light of 430 nm or more and 460 nm or less.

The embodiment of the light emitting device package of FIG. 1 including the light emitting device of one embodiment shown in FIG. 2 may emit white light.

Lighting device

Hereinafter, a lighting apparatus for growing a plant will be described as an embodiment of the lighting system in which the above-described plant growth light emitting device package 200 is arranged.

A plurality of plant growth light emitting device packages 200 of the embodiment can be arrayed on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like as optical members are disposed on the light path of the light emitting device package 200 for plant growth . The plant growth light emitting device package 200, the substrate, and the optical member can function as a backlight unit.

Further, it can be realized by a lighting device including the light emitting device package 200 for plant growth of the embodiment.

Here, the illumination device includes a substrate, a light source module including the light emitting device package 200 for plant growth according to the embodiment, a heat sink for dissipating heat of the light source module, and an electric signal provided from the outside, To the power supply unit. For example, the lighting device may include a lamp, a headlamp, or a streetlight.

The head lamp includes a light emitting module including light emitting device packages 200 disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, And a shade that reflects the light reflected by the reflector and blocks or reflects a part of the light directed toward the lens so that the designer can obtain a desired light distribution pattern.

In the case of the lighting device for plant growth in the embodiment, by applying the light emitting device package 200 for plant growth including the first phosphor 100 of the above-described embodiment, a spectrum favorable for photosynthesis of plants can be realized, And can be suitably used for plant growth.

Hereinafter, the functions and effects according to the present invention will be described in more detail through specific examples and comparative examples.

Example

_{Ca 1 - x AlSiN 3: Eu} 2 + x (0.01 ≤ x ≤ 0.5) of the red phosphor, shown as being an emission center wavelength of _{660 nm Lu 3 - y (Al} , Ga) 5 O 12: Ce 3 + y (0.01 ≪ = y < = 0.5), and a LED chip emitting green light having a luminescence center wavelength of 530 nm and blue light at around 445 nm.

Comparative Example

A light emitting device package was manufactured in the same manner as in Example except that an LED chip emitting red light was used in place of the red phosphor.

Experimental Example : Spectrum analysis

The emission spectra of Examples and Comparative Examples were analyzed, and the photosynthetic rate spectra were used as reference examples for spectral analysis. The results are shown in FIGS. 4 and 5.

FIG. 4 is a diagram showing the emission spectrum of the light emitting device package according to the embodiment and the spectrum (photosynthesis rate spectrum) of the reference example, FIG. 5 is a graph showing the emission spectrum of the light emitting device package according to the comparative example and the spectrum (photosynthesis rate spectrum) Fig.

4 and 5, it was confirmed that the emission spectrum of the example was similar to that of the reference example, as compared with the emission spectrum of the comparative example. It was also found that the overlapping area with the spectrum of the reference example is larger in the case of the embodiment. It was predicted that the light emitting device package of the embodiment is more effective for realizing the spectrum required for plant growth than the comparative example.

In FIG. 5, the emission spectrum of the comparative example has a half-width of about 15 nm in the blue light region and a half-width of about 16 nm in the red light region. Thus, it was predicted that the light emitting device package of the embodiment is more suitable for improving the growth rate of plants than the comparative example.

On the other hand, in order to confirm the light emitting device package suitable for red light emission, the light of the red region band is very important for photosynthesis because the plant growth is mainly performed by the light of the red light region and the blue light region in the visible light wavelength band. The area of the spectrum was analyzed.

6 is a diagram illustrating an emission spectrum of a red LED chip included in a light emitting device package of a comparative example and an emission spectrum of a light emitting device package according to an embodiment.

Referring to FIG. 6, assuming that the spectral area of a 600 nm to 700 nm wavelength range in the emission spectrum according to the embodiment is 100%, the area of the red LED chip spectrum according to the comparative example in the wavelength range is about 40%. As a result, it was predicted that the light emitting device package of the embodiment is suitable for light emitting of the red region band as compared with the light emitting device package of the comparative example.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: First phosphor
110: Light emitting element
130:
150: cavity
160: Second phosphor
200: Light emitting device package

Claims (16)

A plant growth phosphor comprising a compound represented by the following formula (1):
[Chemical Formula 1]
Ca _{1 - x} AlSiN ₃ : Eu ^{2 +} _x
(Wherein x is 0.01? X? 0.5). The method according to claim 1,
Wherein a center wavelength of the light emission of the phosphor is 650 nm or more and 670 nm or less. The method according to claim 1,
Wherein a full width at half maximum (FWHM) of the phosphor is 130 nm or more and 170 nm or less. A body portion;
A cavity formed on the body portion;
A light emitting element disposed in the cavity;
A molding part surrounding the light emitting element and disposed in the cavity; And
And a first phosphor disposed on the molding part,
The first phosphor is a phosphor,
1. A plant growth light emitting device package comprising a compound represented by the following Formula 1:
[Chemical Formula 1]
Ca _{1 - x} AlSiN ₃ : Eu ^{2 +} _x
(Wherein x is 0.01? X? 0.5). The method of claim 4,
Wherein the emission center wavelength of the first phosphor is 650 nm or more and 670 nm or less. The method of claim 4,
Wherein the molding portion includes a second phosphor that is excited by the light emitted from the light emitting device to emit light in a green wavelength range. The method of claim 6,
Wherein the second phosphor comprises a compound represented by the following formula (2): < EMI ID =
(2)
Lu _{3-y (} Al, Ga) ₅ O ₁₂ : Ce ³⁺ _y
(Wherein y is 0.01? Y? 0.5). The method of claim 6,
And the emission center wavelength of the second phosphor is 500 nm or more and 545 nm or less. The method of claim 6,
Based on 100% by weight of the total of the first phosphor and the second phosphor
The first phosphor is contained in an amount of 5 wt% to 15 wt%
And the second phosphor is contained in an amount of 85 wt% or more and 95 wt% or less. The method of claim 6,
The total content of the first phosphor and the second phosphor is
And 50% by weight or more and 70% by weight or less based on 100% by weight of the molding part. The method of claim 7,
Wherein the light emitting element emits light in a blue or ultraviolet wavelength range. The method of claim 7,
Wherein the light emitting element is an LED chip that emits blue light. The method of claim 7,
Wherein the light emitting element emits light of 430 nm or more and 460 nm or less. 9. The plant growth light emitting device package according to claim 7, wherein the light emitting device emits white light. A light emitting device package comprising a light source,
Wherein the light emitting device package includes:
A body portion;
A cavity formed on the body portion;
A light emitting element disposed in the cavity;
A molding part surrounding the light emitting element and disposed in the cavity; And
And a first phosphor disposed on the molding part,
The first phosphor is a phosphor,
A plant growth lighting device comprising a compound represented by the following formula (1):
[Chemical Formula 1]
Ca _{1 - x} AlSiN ₃ : Eu ^{2 +} _x
(Wherein x is 0.01? X? 0.5). 16. The method of claim 15,
And a second phosphor disposed on the molding portion,
Wherein the second phosphor comprises a compound represented by the following formula (2): < EMI ID =
(2)
Lu _{3-y (} Al, Ga) ₅ O ₁₂ : Ce ³⁺ _y
(Wherein y is 0.01? Y? 0.5).

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