KR20180126962A - Phosphor, light emitting device package comprising the same and lighting apparatus comprising the same - Google Patents

Abstract

Embodiments relate to a phosphor, a light emitting device package, and a lighting apparatus including the phosphor, and more particularly, to a phosphor, which contains a compound represented by a specific chemical formula, Lu_aAl_bX_cY_dO_e : Ce_z, and has improved color rendering properties with an increase of a half-width by making an area ratio value (S1) of an emission spectrum represented by a specific mathematical formula, S1= area of the region less than or equal to the luminescent center wavelength : area of the region more than the luminescent center wavelength, be 1 : 1.75 or more and 1 : 2.1 or less.

Description

FIELD OF THE INVENTION [0001] The present invention relates to a phosphorescent device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a phosphor, a light emitting device package, and a lighting apparatus including the same. More particularly, the present invention relates to a phosphor, a light emitting device package and a lighting apparatus including the same.

Light emitting devices such as light emitting diodes and laser diodes using semiconductor III-V or II-VI compound semiconductors can be used for various colors such as red, green, blue, and ultraviolet And it is possible to realize white light with high efficiency by using fluorescent material or color combination, and it has advantages such as low power consumption, semi-permanent lifetime, fast response speed, safety and environment friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps .

In the method of realizing white light, a fluorescent material is bonded on a blue or ultraviolet (UV) light emitting diode chip by a single chip type method, and a method of producing a white light by combining them with a multichip type are combined.

In the case of a multi-chip type, there is a typical method of manufacturing three kinds of chips of RGB (Red, Green, Blue) in combination. This is because the operation voltage of each chip is uneven or the output of each chip The color coordinates are different due to the difference.

Further, in the case of implementing white light by a single chip, a method of using light emitted from a blue LED and exciting at least one of the phosphors using the light to obtain white light is used.

In the realization of white light using such a phosphor, attempts have been made to improve the luminance and the color rendering index (CRI). In particular, the development of a new phosphor has been continuously carried out in order to obtain high quality optical characteristics.

On the other hand, when the light emitting device package is implemented using only a single green phosphor, there is a problem in that the red color spectrum area is insufficient and the color rendering index is lowered. To prevent this, a large amount of red phosphor is used to solve the above- . However, it is inefficient to use an excessive amount of red phosphors, and a solution to this problem is needed.

It is an object of the present invention to provide a phosphor having an improved color rendering property by increasing the half width in the emission spectrum.

It is an object of the present invention to provide a light emitting device package that can be realized even when a phosphor is applied to improve color rendering and use a very small amount of red phosphor.

It is another object of the present invention to provide a lighting apparatus to which the above-described light emitting device package is applied.

The phosphor of the embodiment includes a compound represented by the following general formula (1), and the area ratio (S1) of the emission spectrum represented by the following formula (1) may be 1: 1.75 or more and 1: 2.1 or less.

[Chemical Formula 1]

Lu _a Al _b X _c Y _d O _e : Ce _z

Wherein X is at least one cation selected from the group consisting of Group 2 elements, Y is at least one cation selected from the group consisting of Group 14 elements, 2 <a <3, 0 <b <5, 0 <c <2, 0 <d <2, 10 <e <12 and 0 <z <1)

 [Equation 1]

S1 = area of luminescent center wavelength or less: area of luminescent center wavelength exceeding area

According to one embodiment, the emission center wavelength may be 538 nm or more and 545 nm or less.

According to one embodiment, X may comprise magnesium (Mg).

According to one embodiment, the Y may comprise silicon (Si).

According to one embodiment, the full width at half maximum of the emission spectrum may be 115 nm or more and 120 nm or less.

According to one embodiment, the size D50 of the phosphor may be 10 mu m or more and 14 mu m or less.

The light emitting device package of the embodiment includes a body portion, a cavity formed on the body portion, a light emitting element disposed in the cavity, a molding portion disposed in the cavity surrounding the light emitting element, and a first phosphor disposed on the molding portion Wherein the first phosphor includes a compound represented by the following formula (1), and an area ratio (S1) of the emission spectrum represented by the following formula (1) may be 1: 1.75 or more and 1: 2.1 or less.

[Chemical Formula 1]

Lu _a Al _b X _c Y _d O _e : Ce _z

Wherein X is at least one cation selected from the group consisting of Group 2 elements, Y is at least one cation selected from the group consisting of Group 14 elements, 2 <a <3, 0 <b <5, 0 <c <2, 0 <d <2, 10 <e <12 and 0 <z <1)

 [Equation 1]

S1 = area of luminescent center wavelength or less: area of luminescent center wavelength exceeding area.

According to one embodiment, the molding unit may include a second phosphor that is excited by light emitted from the light emitting device to emit light in a red wavelength range.

According to an embodiment of the present invention, the first phosphor may be contained in an amount of 96 wt% or more and 99 wt% or less with respect to 100 wt% of the total of the first phosphor and the second phosphor, and the first phosphor may be 1 wt% or more and 4 wt% &Lt; / RTI &gt;

According to one embodiment, the second phosphor Sr, CaAlSiN: may include Eu ^{+ 2.}

According to one embodiment, the light emitting device may emit light in a blue or ultraviolet wavelength range.

According to one embodiment, the light emitting device package may emit white light.

The illumination device of the embodiment includes a light emitting device package as a light source, the light emitting device package including a body portion, a cavity formed on the body portion. A first phosphor surrounding the light emitting element, a molding part disposed in the cavity, and a first phosphor disposed on the molding part, wherein the first phosphor includes a compound represented by the following formula , The area ratio (S1) of the emission spectrum represented by the following formula (1) may be 1: 1.75 or more and 1: 2.1 or less.

[Chemical Formula 1]

Lu _a Al _b X _c Y _d O _e : Ce _z

(Wherein X is at least one cation selected from the group consisting of Group 2 elements, Y is at least one cation selected from the group consisting of Group 14 elements, 2 < a < 3, 0 & 0 <c <2, 0 <d <2, 10 <e <12 and 0 <z <1)

[Equation 1]

S1 = area of luminescent center wavelength or less: area of luminescent center wavelength exceeding area.

The phosphor of the embodiment can improve the color rendering property by increasing the half width in the emission spectrum.

The light emitting device package of the embodiment not only improves the bar color rendering property including the phosphor, but also can reduce the content of the red phosphor used, which is economical.

The phosphor of the embodiment is excellent in color rendering property and can be applied to an illumination device.

1 is a view showing an embodiment of a light emitting device package of one embodiment.
2 is a view showing an embodiment of a light emitting device.
3 is a view showing the whole of the phosphor spectra of Examples 1 and 2 and Comparative Examples 1 and 2.
4 is a view showing a spectrum of a region below the luminescent center wavelength according to Examples 1 and 2 and Comparative Examples 1 and 2. Fig.
5 is a diagram showing a spectrum of an emission center wavelength exceeding region according to Examples 1 and 2 and Comparative Examples 1 and 2. FIG.
6 is an SEM photograph of a phosphor according to Comparative Example 1. Fig.
7 is a SEM photograph of the phosphor according to Comparative Example 2. Fig.
8 is an SEM photograph of the phosphor according to Example 1. Fig.
9 is an SEM photograph of the phosphor according to Example 2. Fig.
10 is a diagram showing emission spectra of a light emitting device package including the phosphors of Examples 1 and 2 and Comparative Examples 1 and 2.

In the description of the embodiments, it is described that each layer, film, electrode, plate or substrate, etc. is formed "on" or "under" of each layer, film, electrode, In this case, " on " and " under " all include being formed either directly or indirectly through another element.

In addition, the criteria for the top, side, or bottom of each component are described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Phosphor

The phosphor of the embodiment may include a compound represented by the following formula (1).

[Chemical Formula 1]

Lu _a Al _b X _c Y _d O _e : Ce _z

Wherein X is at least one cation selected from the group consisting of Group 2 elements, Y is at least one cation selected from the group consisting of Group 14 elements, 2 <a <3, 0 <b <5 and 0 <c <2, 0 <d <2, 10 <e <12 and 0 <z <1.

As described above, when manufacturing a light emitting device package using a single LuAG: Ce ^{3 +} -based phosphor, an excessive amount of red phosphor has been used to solve the problem of insufficient red spectral range and to compensate for color rendering.

Therefore, the embodiment can compensate the energy level corresponding to the long wavelength region by using only the green phosphor by adjusting the energy level of the active material (Ce ^{3 +} ) by doping specific materials in the matrix composition of the phosphor. Accordingly, it is possible to realize a wide half width in the emission spectrum, and in the case of the light emitting device package including the phosphor of the embodiment, the content of the red phosphor can be reduced.

According to one embodiment, X may comprise magnesium (Mg). That is, the phosphor of the embodiment may include particles represented by Lu _a Al _b Mg _c Y _d O _e : Ce _z .

According to one embodiment, the Y may comprise silicon (Si). That is, the phosphor of the embodiment may include particles represented by Lu _a Al _b X _c Si _d O _e : Ce _z .

Preferably, the phosphor represented by the above formula (1) may be Lu _a Al _b Mg _c Si _d O _e : Ce _z , and in this case, the effect of increasing the half width can be remarkable.

The emission spectrum according to the phosphor of the embodiment may have a value in the range of 1: 1.75 to 1: 2.1 or less in terms of the ratio of the area of the light emission center wavelength region and the area of the light emission center wavelength excess region.

The emission spectrum according to the phosphor of the embodiment may have an area ratio S1 of the emission spectrum represented by the following formula (1).

[Equation 1]

S1 = area of luminescent center wavelength or less: area of luminescent center wavelength exceeding area

If the area ratio S1 of the spectrum is less than 1: 1.75, there is a problem that the amount of the red phosphor used increases to cover the long wavelength region. On the other hand, when the area ratio S1 of the spectrum is more than 1: 2.1, there is a problem that another phosphor for covering the short wavelength region is additionally required to realize the light emitting device package exhibiting the same color coordinate as the emission center wavelength shifts to the long wavelength region .

In the emission spectrum according to the phosphor of the embodiment, the area of the region below the luminescent center wavelength is somewhat narrower, but the area of the luminescent center wavelength exceeding region is increased, and the degree of spectral increase tends to be relatively larger than the degree of decrease Reference). Thus, the half width can be increased in the emission spectrum and the color rendering property can be improved. The total area of the spectrum can also be increased.

According to one embodiment, the emission center wavelength of the phosphor may be 538 nm or more and 545 nm or less.

According to one embodiment, the size D50 of the phosphor may be 10 μm or more and 14 μm or less (see Table 2).

Hereinafter, a method of manufacturing a phosphor of the embodiment will be described.

First, the precursor of the matrix and the precursor of the activator are mixed with each other. As a specific example of a matrix precursor Lu ₂ O _3, and the like Al ₂ O _3. Specific examples of the activator precursor include Ce ₂ O ₃ And so on. Specific examples of the precursor of the doping substance for controlling the energy level of the active material (Ce ^{3 +} ) include MgO and SiO ₂ . The mixture may be dried and then heat-treated in a nitrogen atmosphere to prepare a phosphor.

According to one embodiment, a flux material such as H ₃ BO ₃ , NaF, NH ₄ F, K ₃ PO ₄ , BaF, or NH ₄ Cl is added to facilitate the location of the active precursor in the matrix lattice A mixing process can be performed. According to another embodiment, MnF ₂ or the like may be mixed with the precursor of the parent and the precursor of the activator so as to function as an activator precursor while at the same time facilitating the positioning of the activator precursor in the mother lattice. Further, in addition to the above-described active precursor, additional active substances may be added. Specific examples of the active substance to be added additionally include Na, K, Li, Sc, La, Y, and the like. According to the above-described embodiments, the crystallinity of the phosphor to be produced can be improved and the brightness can be improved.

Here, a specific example of the N ₂ concentration of the nitrogen-containing atmosphere gas may be 90% or more, and preferably 95% or more. A nitrogen-containing atmospheric gas may be introduced into a vacuum state to form a nitrogen atmosphere, and a nitrogen-containing atmospheric gas may be introduced into the vacuum state without making it into a vacuum state. At this time, gas can be introduced discontinuously.

Further, the brightness can be improved by increasing the crystallinity of the phosphor by applying a pressure in a nitrogen atmosphere. A specific example of the pressure range may be around 0.5 MPa.

Next, the precursor of the mother, the precursor of the active material, and the precursor mixture of the doping material may be subjected to a heat treatment followed by grinding to obtain a phosphor. The obtained phosphor may be in powder form. If necessary, it may include a cooling step before grinding.

On the other hand, in order to improve the brightness through the improvement of the crystallinity of the phosphor, the heat treatment time of the mixture can be increased and the heat treatment process can proceed to a plurality of steps.

As a specific example, the mixture may be around 1300 ° C. If the heat treatment temperature significantly exceeds 1300 占 폚, defects may occur in materials added for doping.

Further, a cleaning process may be included to remove foreign matters on the surface of the phosphor. The substance used for washing the phosphor may be an acidic substance such as HF, HNO ₃ , HCl, H ₂ SO ₄ , or a basic substance such as NaOH, NH ₄ OH, KOH, or the like.

The powder can be made uniform in a desired size by a pulverizing process. Specific examples of the pulverizing method include, but are not limited to, a ball mill and the like. If necessary, an additional cleaning step may be included after the grinding step.

The phosphor of the embodiment includes a compound represented by the general formula (1) in which specific ions are doped into the matrix, and the half-width of the emission spectrum can be increased by making the area ratio (S1) of the emission spectrum according to the phosphor to be within a certain range. Accordingly, since the color rendering property is remarkably improved, it can be applied to a high-performance lighting apparatus.

In addition, since the phosphor of the embodiment can improve the color rendering property by controlling the energy level of the activator ion, when the phosphor is applied to the light emitting device package, the content of the red phosphor can be reduced, which is economical.

The light-

1 is a view illustrating an embodiment of a light emitting device package 200. Referring to FIG.

The light emitting device package 200 includes a body 130, a cavity 150 formed on the body 130, and a light emitting element 110 disposed in the cavity. The body 130 includes a light emitting element 110 for electrical connection with the lead frame.

The light emitting device 110 may be disposed on the bottom surface of the cavity in the cavity 150, and a molding portion may be disposed on the cavity surrounding the light emitting device.

The molding part may include the phosphor 100 of the above-described embodiment.

The body 130 may include a silicone material, a synthetic resin material, or a metal material. The body 130 may have a cavity 150 having an open top and a side surface and a bottom surface.

The cavity 150 may be formed in a cup shape or a concave shape. The side surface of the cavity 150 may be perpendicular or inclined to the bottom surface, and may vary in size and shape.

The shape of the cavity 150 viewed from the top may be circular, polygonal, elliptical, or the like, and may have a curved shape. However, the shapes are not limited thereto unless they depart from the object of the embodiment.

The body 130 may include a first lead frame 142 and a second lead frame 144 to be electrically connected to the light emitting device 110. In the case where the body portion 130 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the body portion 130 to prevent an electrical short between the first and second lead frames 142 and 144 have.

The first lead frame 142 and the second lead frame 144 are electrically separated from each other and can supply current to the light emitting device 110. [ The first lead frame 142 and the second lead frame 144 may reflect the light generated from the light emitting device 110 to increase the light efficiency. .

The light emitting device 110 may be disposed in the cavity 150 and disposed on the body 130 or on the first lead frame 142 or the second lead frame 144. The light emitting device 110 to be disposed may be a vertical light emitting device, a horizontal light emitting device, or the like.

The light emitting device 110 may be disposed on the first lead frame 142 and may be connected to the second lead frame 144 through the wire 146. However, And can be connected to the lead frame by a flip chip bonding or a die bonding method.

In the embodiment of the light emitting device package 200 of FIG. 1, the molding part may surround the light emitting device 110 and fill the cavity 150.

In addition, the molding part may include a red phosphor 160 and a resin in addition to the phosphor 100 described above.

Specific examples of the red phosphor 160 may be Sr, CaAlSiN: Eu ^{2 +} , but the present invention is not limited thereto.

The light emitting device package of the embodiment increases the half-width of emission spectrum by including the phosphor 100, thereby significantly improving the color rendering property. Thus, it is possible to prevent the use of a large amount of red phosphor for compensation of the red spectral range. That is, the content of the red phosphor can be reduced.

According to one embodiment, the phosphor 100 is contained in an amount of 96 wt% or more and 99 wt% or less with respect to 100 wt% of the total amount of the phosphor 100 and the red phosphor 160, the red phosphor 160 is 1 wt% By weight or more and 4% by weight or less.

The molding part may include resin and phosphors 100 and 160, and may be disposed to surround the light emitting device 110 to protect the light emitting device 110.

The resin that can be mixed with the phosphor in the molding part may be in the form of any one of a silicone resin, an epoxy resin, and an acrylic resin or a mixture thereof.

The phosphors 100 and 160 are excited by the light emitted from the light emitting device 110 to emit the wavelength-converted light.

For example, the light emitted from the light emitting device may be blue light, the green phosphor 100 of the embodiment that emits green light by being excited by the blue light to the molding part of the light emitting device package, The red phosphor 160 may emit red light.

Although not shown, the molding part may be arranged in a dome shape that fills the cavity 150 and is higher than the side part height of the cavity 150. In order to adjust the light output angle of the light emitting device package 200 Or may be arranged in a deformed dome shape. The molding part may surround and protect the light emitting device 110 and function as a lens for changing a path of light emitted from the light emitting device 110.

The light emitting device package of the embodiment includes the phosphor of the above-described embodiment, and has excellent color rendering properties. Further, the amount of the red phosphor used for emitting white light can be remarkably reduced, which is economical.

Light emitting element

2 illustrates an embodiment of the light emitting device 110. The light emitting device 110 includes a support substrate 70, a light emitting structure 20, an ohmic layer 40, and a first electrode 80 .

The light emitting structure 20 includes a first conductivity type semiconductor layer 22, an active layer 24, and a second conductivity type semiconductor layer 26.

The first conductive semiconductor layer 22 may be formed of a compound semiconductor such as a group-V, a-VI, or the like, and may be doped with a first conductive-type dopant. The first conductive semiconductor layer 22 is a semiconductor material having a composition formula of AlxInyGa (1-xy) N (0? X? 1, 0? Y? 1, 0? X + y? 1), AlGaN, GaN, InAlGaN , AlGaAs, GaP, GaAs, GaAsP, and AlGaInP.

When the first conductivity type semiconductor layer 22 is an n-type semiconductor layer, the first conductivity type dopant may include n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 22 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

The active layer 24 is disposed between the first conductivity type semiconductor layer 22 and the second conductivity type semiconductor layer 26 and includes a single well structure, a multiple well structure, a single quantum well structure, A multi quantum well (MQW) structure, a quantum dot structure, or a quantum wire structure.

InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaN / AlGaN / InGaN / InGaN / InGaN / AlGaAs, GaP (InGaP) / AlGaP, but the present invention is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

The second conductive semiconductor layer 26 may be formed of a semiconductor compound. The second conductive semiconductor layer 26 may be formed of a compound semiconductor such as a group-V or-VI group, and may be doped with a second conductive dopant. The second conductivity type semiconductor layer 26 may be a semiconductor material having a composition formula of InxAlyGa1-x-yN (0? X? 1, 0? Y? 1, 0? X + y? 1), AlGaN, GaN AlInN, For example, the second conductivity type semiconductor layer 26 may be made of AlxGa (1-x) N. For example, the second conductivity type semiconductor layer 26 may be formed of AlxGa (1-x) N.

When the second conductivity type semiconductor layer 26 is a p-type semiconductor layer, the second conductivity type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity type semiconductor layer 26 may be formed as a single layer or a multilayer, but is not limited thereto.

The surface of the first conductivity type semiconductor layer 22 forms a pattern, and the light extraction efficiency can be improved. A first electrode 80 may be disposed on the surface of the first conductivity type semiconductor layer 22 and a surface of the first conductivity type semiconductor layer 22 on which the first electrode 80 is disposed, May not form a pattern. The first electrode 80 may be formed as a single layer or a multilayer structure including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu) have.

A passivation layer 90 may be formed around the light emitting structure 20. The passivation layer 90 may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. For example, the passivation layer 90 may comprise a silicon oxide (SiO2) layer, an oxynitride layer, or an aluminum oxide layer.

A second electrode may be disposed under the light emitting structure 20, and the ohmic layer 40 and the reflective layer 50 may serve as a second electrode. GaN is disposed under the second conductive type semiconductor layer 26, so that current or holes can be smoothly supplied to the second conductive type semiconductor layer 26.

The ohmic layer 40 may have a thickness of about 200 Angstroms (A). The ohmic layer 40 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO) ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO nitride), AGZO (Al- Ga ZnO), IGZO , NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Au, and Hf. However, the present invention is not limited to these materials.

The reflective layer 50 may be formed of a metal such as molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium Metal layer. The reflective layer 50 effectively reflects light generated in the active layer 24, thereby greatly improving the light extraction efficiency of the semiconductor device.

The support substrate 70 may be formed of a conductive material such as a metal or a semiconductor material. A metal having excellent electrical conductivity or thermal conductivity can be used and a material having a high thermal conductivity (e.g., metal) can be formed so that heat generated during operation of the semiconductor device can be sufficiently diffused.

For example, the support substrate 70 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Au), a copper alloy (Cu Alloy), a nickel (Ni), a copper-tungsten (Cu-W), a carrier wafer (for example, GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, and Ga2O3), and the like.

The supporting substrate 70 may have a thickness of 50 to 200 mu m in order to have a mechanical strength sufficient to separate the entire nitride semiconductor into separate chips through a scribing process and a breaking process, Lt; RTI ID = 0.0 &gt; um. &Lt; / RTI &gt;

The bonding layer 60 bonds the reflective layer 50 and the support substrate 70 and is formed of a metal such as Au, Sn, In, Al, Si, Ag, Nickel (Ni), and copper (Cu), or an alloy thereof.

The embodiment of the light emitting device 110 shown in FIG. 2 is an embodiment of the vertical light emitting device. In the embodiment of the light emitting device package 200 shown in FIG. 1, the vertical light emitting device shown in FIG. A light emitting device, and a flip chip type light emitting device may be disposed. In this case, the light emitting device 110 may emit light in a blue or ultraviolet wavelength region.

The embodiment of the light emitting device package of FIG. 1 including the light emitting device of one embodiment shown in FIG. 2 may emit white light.

Lighting device

Hereinafter, an image display apparatus and a lighting apparatus will be described as an embodiment of an illumination system in which the above-described light emitting device package 200 is arranged.

A plurality of light emitting device packages 200 of the embodiment can be arrayed on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, can be disposed on the light path of the light emitting device package 200. The light emitting device package 200, the substrate, and the optical member may function as a backlight unit.

Further, the display device, the indicating device, and the lighting device including the light emitting device package 200 of the embodiment can be realized.

Here, the display device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module for emitting light, a light guide plate disposed in front of the reflector for guiding light emitted from the light emitting module forward, An image signal output circuit connected to the display panel and supplying an image signal to the display panel; and a color filter disposed in front of the display panel, . Here, the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

The illumination device includes a substrate, a light source module including the light emitting device package 200 according to the embodiment, a heat sink for dissipating heat of the light source module, and an electric signal provided from the outside, And may include a power supply unit. For example, the lighting device may include a lamp, a headlamp, or a streetlight.

The head lamp includes a light emitting module including light emitting device packages 200 disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, And a shade that reflects the light reflected by the reflector and blocks or reflects a part of the light directed toward the lens so that the designer can obtain a desired light distribution pattern.

In the case of the video display device and the lighting device of the embodiment, by applying the light emitting device package 200 including the phosphor 100 of the above-described embodiment, the color rendering property can be remarkably improved.

Hereinafter, the functions and effects according to the present invention will be described in more detail through specific examples and comparative examples.

Example  One

Lu ₂ O ₃ , Al ₂ O ₃ , Ce ₂ O ₃ , MgO, SiO ₂ Were mixed and then dried. Then, the resultant was heat-treated at a temperature of 1300 ° C. for 3 hours under a nitrogen atmosphere (mixed gas of N ₂ 95% and H ₂ 5%), cleaned and then ground by a ball mill method. Then, again, the final powder was obtained to prepare a green phosphor of Lu _2.93 Al _4.5 Mg _0.25 Si _0.25 O ₁₂ : Ce _0.07 .

Example  2

MgO, SiO ₂ Green phosphors were prepared in the same manner as in Example 1,

Comparative Example  One

MgO, SiO ₂ Was prepared in the same manner as in Example 1, except that the phosphor was heat-treated at 1500.

Comparative Example  2

MgO, SiO ₂ Was used instead of the green phosphor.

Experimental Example  1: Phosphor spectrum analysis

The spectra of the phosphors according to Examples 1 and 2 and Comparative Examples 1 and 2 were analyzed and the results are shown in Table 1 below.

Figs. 3 to 5 are diagrams showing spectra of the entire phosphor spectrums of Examples 1, 2, and Comparative Examples 1 and 2, the spectrum of the light emission center wavelength sub-wavelength region and the light emission center wavelength excess region, respectively.

division Luminescent center wavelength [nm] Half width [nm] Total Spectral Area The area of the region below the luminescent center wavelength The area of the luminescence center wavelength exceeding area Area ratio of emission spectrum
(S1) Comparative Example 1 538 105 112.4 44.4 68 1: 1.53 Comparative Example 2 538 105 113.5 45.1 68.4 1: 1.52 Example 1 538 115 124.5 44.5 80 1: 1.80 Example 2 543 119 127.5 41.3 86.2 1: 2.09

Referring to Table 1 and FIG. 3 to FIG. 5, it was confirmed that the phosphors of the embodiments excited by blue light showed emission wavelength bands in the vicinity of 538 nm or more and 545 nm or less, and the half widths were increased as compared with the comparative examples .

In addition, the emission spectrum area ratio of the examples was increased as compared with the comparative examples. This is because the increase in the area of the luminescent center wavelength region is relatively larger than the decrease in the area of the luminescent center wavelength region or less to be.

Experimental Example  2: Phosphor surface analysis

The phosphors of Comparative Examples 1, 2, and Examples 1 and 2 were analyzed for their surface states using a scanning electron microscope (SEM), which are shown in FIGS. 6 to 9, respectively.

The phosphors of the examples doped with Mg and Si ions were confirmed to be different from the comparative examples.

Experimental Example  3: Particle size analysis of phosphor

The volume average particle size was measured using a particle size analyzer. The results are shown in Table 2 below.

division D10 [占 퐉] D50 [占 퐉] D90 [占 퐉] Comparative Example 1 10.55 14.25 20.59 Comparative Example 2 13.92 22.03 35.46 Example 1 4.72 10.59 20.13 Example 2 5.08 10.61 20.47

Referring to Table 2, it can be confirmed that the phosphors of the comparative examples and the phosphors of the other materials have different volume average particle diameters.

Experimental Example  4: Evaluation of color rendering property of phosphor

The color rendering properties of Example 1 and Comparative Example 1 were evaluated, and the results are shown in Table 3 below.

division CRI R9 Comparative Example 1 62.8 -124.4 Example 1 68.8 -78.0

Referring to Table 3, it was confirmed that the CRI value of Example 1 was increased by 6.0 compared to Comparative Example 1, and that the color rendering property was greatly improved.

Experimental Example  5: Emission spectrum analysis of light emitting device package

The red phosphor of Sr, CaAlSiN: Eu ^{2 +} was contained in the green phosphor of each of Examples 1, 2 and Comparative Examples 1 and ^{2 in} the content ratio shown in Table 4 to prepare a light emitting device package.

Phosphor content Green phosphor Red phosphor Comparative Example 1 95.0% 5.0% Comparative Example 2 94.7% 5.3% Example 1 96.7% 3.3% Example 2 98.0% 2.0%

The color coordinate values of the prepared light emitting device package are shown in Table 5, and the emission spectrum was analyzed.

division Cx Cy CCT [K] Comparative Example 1 0.343 0.351 5065 Comparative Example 2 0.344 0.352 5038 Example 1 0.342 0.351 5109 Example 2 0.343 0.351 5066

10 is an emission spectrum of a light emitting device package including the phosphors of Examples 1 and 2 and Comparative Examples 1 and 2. Referring to FIGS. 10 and 5, in the case of the light emitting device package including the embodiments, even when the red phosphor is used in a small amount compared with the light emitting device package of the comparative examples, color coordinates extremely similar to those of the light emitting device package of the comparative examples are shown.

On the other hand, in the case of the light emitting device package including the embodiments in the emission spectrum, it was confirmed that, even in the case of the area below the center wavelength of the light emission, the area of increase in the area of the light emitting center wavelength exceeding area is increased.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: phosphor
110: Light emitting element
130:
150: cavity
160: Red phosphor
200: Light emitting device package

Claims (13)

A compound represented by the following formula (1)
Wherein the area ratio S1 of the emission spectrum represented by the following formula (1) is 1: 1.75 or more and 1: 2.1 or less: phosphor:
[Chemical Formula 1]
Lu _a Al _b X _c Y _d O _e : Ce _z
Wherein X is at least one cation selected from the group consisting of Group 2 elements, Y is at least one cation selected from the group consisting of Group 14 elements, 2 <a <3, 0 <b <5, 0 <c <2, 0 <d <2, 10 <e <12 and 0 <z <1)
[Equation 1]
S1 = area of luminescent center wavelength or less: area of luminescent center wavelength exceeding area. The phosphor according to claim 1, wherein the emission center wavelength is 538 nm or more and 545 nm or less. The phosphor according to claim 1, wherein X comprises magnesium (Mg). The phosphor according to claim 1, wherein Y comprises silicon (Si). The method according to claim 1,
Wherein a full width at half maximum of the emission spectrum is not less than 115 nm and not more than 120 nm. In claim 1,
And a size (D50) of the phosphor is 10 占 퐉 or more and 14 占 퐉 or less. A body portion;
A cavity formed on the body portion;
A light emitting element disposed in the cavity;
A molding part surrounding the light emitting element and disposed in the cavity; And
And a first phosphor disposed on the molding part,
The first phosphor is a phosphor,
A compound represented by the following formula (1)
(S1) of the emission spectrum represented by the following formula (1) is not less than 1: 1.75 and not more than 1: 2.1,
[Chemical Formula 1]
Lu _a Al _b X _c Y _d O _e : Ce _z
Wherein X is at least one cation selected from the group consisting of Group 2 elements, Y is at least one cation selected from the group consisting of Group 14 elements, 2 <a <3, 0 <b <5, 0 <c <2, 0 <d <2, 10 <e <12 and 0 <z <1)
[Equation 1]
S1 = area of luminescent center wavelength or less: area of luminescent center wavelength exceeding area. The method of claim 7,
Wherein the molding part includes a second phosphor that is excited by light emitted from the light emitting device to emit light in a red wavelength range. The method of claim 8,
Based on 100% by weight of the total of the first phosphor and the second phosphor
Wherein the first phosphor contains 96 wt% or more and 99 wt% or less, and the second phosphor comprises 1 wt% or more and 4 wt% or less. The method according to claim 8, wherein the second phosphor is a Sr, CaAlSiN:, a light emitting device package including a Eu ^{+ 2.} The light emitting device package according to claim 7, wherein the light emitting element emits light in a blue or ultraviolet wavelength range. The light emitting device package according to claim 7, emitting white light. A light emitting device package comprising a light source,
Wherein the light emitting device package includes:
A body portion;
A cavity formed on the body portion;
A light emitting element disposed in the cavity;
A molding part surrounding the light emitting element and disposed in the cavity; And
And a first phosphor disposed on the molding part,
The first phosphor is a phosphor,
A compound represented by the following formula (1)
Wherein the area ratio (S1) of the emission spectrum represented by the following formula (1) is 1: 1.75 or more and 1: 2.1 or less.
[Chemical Formula 1]
Lu _a Al _b X _c Y _d O _e : Ce _z
(Wherein X is at least one cation selected from the group consisting of Group 2 elements, Y is at least one cation selected from the group consisting of Group 14 elements, 2 < a < 3, 0 & 0 <c <2, 0 <d <2, 10 <e <12 and 0 <z <1)
[Equation 1]
S1 = area of luminescent center wavelength or less: area of luminescent center wavelength exceeding area.

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