KR20180127846A - Display device using semiconductor light emitting device - Google Patents

Abstract

According to the present invention, a display device supporting high quality comprises: a plurality of frames; a plurality of light source units respectively disposed on one surface of the frames and having a plurality of semiconductor lighting devices mounted on the substrate; an elastic member mounted on the frames and applying elastic force to the neighboring frames; and an adjustment bracket disposed on the other surface of the frames. The adjustment bracket has an adjustment hole whose one side is inclined with respect to a direction of one surface of the frames to adjust spacing of the neighboring light source units by moving the frames.

Description

Technical Field [0001] The present invention relates to a display device using a semiconductor light-

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting device.

Recently, display devices having excellent characteristics such as a thin film type and a flexible type in the field of display technology have been developed. On the other hand, major displays that are commercialized today are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes). However, in the case of an LCD, there is a problem that the reaction time is not fast and the implementation of the flexible is difficult. In the case of the AMOLED, there is a weak point that the life span is short and the mass production yield is not good.

Light emitting diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light. In 1962, red LEDs using GaAsP compound semiconductors were commercialized, Has been used as a light source for a display image of an electronic device including a communication device. Accordingly, a method of solving the above problems by implementing a display using the semiconductor light emitting device can be presented.

In recent years, digital signage has been developed in various forms such as streaming high-resolution images using a large display or providing customized advertisements through interaction with a user. Accordingly, in the field of digital signage, the display can be applied using the semiconductor light emitting element.

However, in order to realize a super-high-resolution large screen, there is a limitation in manufacturing a large panel and increasing the cost of using a single panel to increase the display size. To compensate for this, there is a need to configure a large screen shall. In this case, when panels using semiconductor light emitting elements are used to realize high image quality, the pitch is reduced (around several tens of microns), and the adjustment precision must be very high, and it is difficult to realize the adjustment.

Accordingly, the present invention proposes a new display device based on a semiconductor light emitting device having a size of several to several tens of micrometers, and capable of controlling the interval between the panels.

It is an object of the present invention to provide a display device of a new structure capable of adjusting the interval between panels while supporting high image quality.

Another object of the present invention is to realize a high-quality, large-area display without a dark line by using a semiconductor light emitting device.

The display device according to the present invention realizes a display device of a new structure by using an adjustment bracket for adjusting the interval between adjacent light sources by moving a plurality of frames.

As a specific example, the display device may include a plurality of frames, a plurality of light source portions disposed on one side of the plurality of frames, each of the light source portions including a substrate, a plurality of semiconductor light emitting elements mounted on the substrate, An elastic member mounted on the frame of the frame and applying an elastic force to the neighboring frame, and an adjustment bracket disposed on the other side of the plurality of frames. An adjustment hole is formed in the adjustment bracket so that at least one side thereof is inclined with respect to a direction of one side of the plurality of frames so as to move the plurality of frames and adjust the interval between adjacent light sources.

In one embodiment, the length of one side of the light source unit is longer than the length of one side of the frame so that the edge of the light source unit protrudes from the edge of the frame. And the edge of the protruded light source portion may be arranged to cover at least a part of the elastic member.

In an embodiment, the elastic member is disposed on a side surface of the plurality of frames. The elastic member may be configured to cover a gap formed between the neighboring light sources. The elastic member may contact at least one of the neighboring light sources to emit heat.

In the embodiment, a frame hole corresponding to the adjustment hole is formed in the frame. In the frame hole, a thread corresponding to the thread of the adjusting rod can be formed.

In an embodiment, the display device includes a fixing bracket coupled to the other side of the plurality of frames. The fastening bracket may be fastened to an adjustment bracket disposed in a neighboring frame. The adjustment bracket and the fixing bracket may be disposed on both sides disposed on opposite sides of the frame, respectively. The adjustment bracket may be one of a plurality of adjustment brackets disposed on either side of the frame, and the fixing bracket may be one of a plurality of fixing brackets disposed on the other side of the frame.

In an exemplary embodiment, the plurality of light source portions may include a plurality of semiconductor light emitting elements, a support substrate to which the plurality of semiconductor light emitting elements are coupled, and a plurality of semiconductor light emitting elements, And a conversion layer for converting a color of light generated in at least a part of the plurality of semiconductor light emitting elements so as to form a pixel. The semiconductor light emitting device corresponding to at least one of the red subpixel and the green subpixel may have a light emitting area different from that of the semiconductor light emitting device corresponding to the blue subpixel.

In the display device according to the present invention, by adjusting the gap between the panels using an adjustment method using threads using an adjustment rod without eccentricity, fine adjustments can be made, Do.

In addition, by applying an elastic member that transmits heat to the side surface of the panel, it is possible to realize a simple structure of heat scattering effect and prevention of light leakage.

Furthermore, according to the structure proposed in the present invention, an ultra-high quality panel having a very small pitch can be realized as a seamless large screen without a dark line.

Further, in the present invention, since the emission areas of the red, green, and blue subpixels of the light source unit are different from each other, the driving currents of the respective subpixels can be controlled to be the same.

Further, in the present invention, the separated pixels can form a unit substrate, and the size of the unit substrate is very small, which is suitable for reducing the pixel interval of a large display such as a signage.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.
Fig. 2 is a partially enlarged view of part A of Fig. 1, and Figs. 3a and 3b are cross-sectional views taken along line BB and CC of Fig.
4 is a conceptual diagram showing a flip chip type semiconductor light emitting device of FIG.
FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention.
8 is a cross-sectional view taken along line DD of FIG.
9 is a conceptual diagram showing a vertical semiconductor light emitting device of FIG.
10 is a conceptual diagram showing an embodiment of digital signage using the semiconductor light emitting device of the present invention.
11 is a partial perspective view for explaining one panel portion of Fig.
FIG. 12 is a cross-sectional view taken along line EE of FIG. 11, and FIG. 13 is a cross-sectional view taken along line FF of FIG.
FIG. 14 is a plan view of a semiconductor light emitting device package of the present invention, and FIG. 15 is a plan view of a supporting substrate.
FIGS. 16A and 16B are a rear perspective view and a front view conceptual view for explaining an assembly structure in which the panel of FIG. 11 is assembled with peripheral panels.
17 is an enlarged view of one frame of Fig.
18A and 18B are an enlarged view and a cross-sectional view of the adjustment bracket.
19 and 20 are operation diagrams for adjusting the interval between panels in the present invention, respectively.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, wherein like reference numerals are used to designate identical or similar elements, and redundant description thereof will be omitted. The suffix "module" and " part "for the components used in the following description are given or mixed in consideration of ease of specification, and do not have their own meaning or role. In the following description of the embodiments of the present invention, a detailed description of related arts will be omitted when it is determined that the gist of the embodiments disclosed herein may be blurred. In addition, it should be noted that the attached drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical idea disclosed in the present specification by the attached drawings.

It is also to be understood that when an element such as a layer, region or substrate is referred to as being present on another element "on," it is understood that it may be directly on the other element or there may be an intermediate element in between There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, a slate PC, , A Tablet PC, an Ultra Book, a digital TV, a desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiments described herein may be applied to a device capable of being displayed, even in the form of a new product to be developed in the future.

1 is a conceptual diagram showing an embodiment of a display device using the semiconductor light emitting device of the present invention.

According to the illustrated example, the information processed in the control unit of the display device 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, twistable, collapsible, and curlable, which can be bent by an external force. For example, a flexible display can be a display made on a thin, flexible substrate that can be bent, bent, folded or rolled like paper while maintaining the display characteristics of conventional flat panel displays.

In a state where the flexible display is not bent (for example, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display is flat. In the first state, the display area may be a curved surface in a state of being bent by an external force (for example, a state having a finite radius of curvature, hereinafter referred to as a second state). As shown in the figure, the information displayed in the second state may be time information output on the curved surface. Such visual information is realized by independently controlling the emission of a sub-pixel arranged in a matrix form. The unit pixel means a minimum unit for implementing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as one type of semiconductor light emitting device for converting a current into light. The light emitting diode is formed in a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in detail with reference to the drawings.

FIG. 2 is a partial enlarged view of a portion A of FIG. 1, FIGS. 3 A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, FIG. 4 is a conceptual view of a flip chip type semiconductor light emitting device of FIG. FIGS. 5A to 5C are conceptual diagrams showing various forms of implementing a color in relation to a flip chip type semiconductor light emitting device.

Referring to FIGS. 2, 3A and 3B, a display device 100 using a passive matrix (PM) semiconductor light emitting device as a display device 100 using a semiconductor light emitting device is illustrated. However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device 100 includes a substrate 110, a first electrode 120, a conductive adhesive layer 130, a second electrode 140, and a plurality of semiconductor light emitting devices 150.

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may comprise glass or polyimide (PI). In addition, any insulating material such as PEN (polyethylene naphthalate) and PET (polyethylene terephthalate) may be used as long as it is insulating and flexible. In addition, the substrate 110 may be either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, so that the first electrode 120 may be positioned on the substrate 110.

The insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is located and the auxiliary electrode 170 may be disposed on the insulating layer 160. In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be one wiring substrate. More specifically, the insulating layer 160 is formed of a flexible material such as polyimide (PI), polyimide (PET), or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 and is disposed on the insulating layer 160 and corresponds to the position of the first electrode 120. For example, the auxiliary electrode 170 may be in the form of a dot and may be electrically connected to the first electrode 120 by an electrode hole 171 passing through the insulating layer 160. The electrode hole 171 may be formed by filling a via hole with a conductive material.

Referring to these drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160, but the present invention is not limited thereto. For example, a layer having a specific function may be formed between the insulating layer 160 and the conductive adhesive layer 130, or a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 It is also possible. In the structure in which the conductive adhesive layer 130 is disposed on the substrate 110, the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity. To this end, the conductive adhesive layer 130 may be mixed with a substance having conductivity and a substance having adhesiveness. Also, the conductive adhesive layer 130 has ductility, thereby enabling the flexible function in the display device.

As an example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be formed as a layer having electrical insulation in the horizontal X-Y direction while permitting electrical interconnection in the Z direction passing through the thickness. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (hereinafter, referred to as a conductive adhesive layer).

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member. When heat and pressure are applied, only a specific part of the anisotropic conductive film has conductivity due to the anisotropic conductive medium. Hereinafter, the anisotropic conductive film is described as being subjected to heat and pressure, but other methods may be used to partially conduct the anisotropic conductive film. In this method, for example, either the heat or the pressure may be applied, or UV curing may be performed.

In addition, the anisotropic conduction medium can be, for example, a conductive ball or a conductive particle. According to the example, in the present example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member. When heat and pressure are applied, only specific portions are conductive by the conductive balls. The anisotropic conductive film may be a state in which a plurality of particles coated with an insulating film made of a polymer material are contained in the core of the conductive material. In this case, the insulating film is broken by heat and pressure, . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and the electrical connection in the Z-axis direction is partially formed by the height difference of the mating member adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which a plurality of particles coated with a conductive material are contained in the insulating core. In this case, the conductive material is deformed (pressed) to the portion where the heat and the pressure are applied, so that the conductive material becomes conductive in the thickness direction of the film. As another example, it is possible that the conductive material penetrates the insulating base member in the Z-axis direction and has conductivity in the thickness direction of the film. In this case, the conductive material may have a pointed end.

According to the present invention, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of an insulating base member. More specifically, the insulating base member is formed of a material having adhesiveness, and the conductive ball is concentrated on the bottom portion of the insulating base member, and is deformed together with the conductive ball when heat and pressure are applied to the base member So that they have conductivity in the vertical direction.

However, the present invention is not limited thereto. The anisotropic conductive film may be formed by randomly mixing conductive balls into an insulating base member or by forming a plurality of layers in which a conductive ball is placed in a double- ACF) are all available.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. In addition, solutions containing conductive particles can be solutions in the form of conductive particles or nanoparticles.

Referring again to FIG. 5, the second electrode 140 is located in the insulating layer 160, away from the auxiliary electrode 170. That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed.

After the conductive adhesive layer 130 is formed in a state where the auxiliary electrode 170 and the second electrode 140 are positioned in the insulating layer 160, the semiconductor light emitting device 150 is connected to the semiconductor light emitting device 150 in a flip chip form The semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140.

Referring to FIG. 4, the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type semiconductor layer 155 in which a p-type electrode 156, a p-type electrode 156 are formed, an active layer 154 formed on the p-type semiconductor layer 155, And an n-type electrode 152 disposed on the n-type semiconductor layer 153 and the p-type electrode 156 on the n-type semiconductor layer 153 and 154 in the horizontal direction. In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 by the conductive adhesive layer 130, and the n-type electrode 152 may be electrically connected to the second electrode 140.

Referring again to FIGS. 2, 3A and 3B, the auxiliary electrode 170 is elongated in one direction, and one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150. For example, the p-type electrodes of the right and left semiconductor light emitting elements may be electrically connected to one auxiliary electrode around the auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 by heat and pressure, and the semiconductor light emitting device 150 is inserted into the conductive adhesive layer 130 through the p- And only the portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 has conductivity and the semiconductor light emitting device does not have a conductive property because the semiconductor light emitting device is not press- The conductive adhesive layer 130 not only couples the semiconductor light emitting device 150 and the auxiliary electrode 170 and the semiconductor light emitting device 150 and the second electrode 140 but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting element array, and the phosphor layer 180 is formed in the light emitting element array.

The light emitting element array may include a plurality of semiconductor light emitting elements having different brightness values. Each of the semiconductor light emitting devices 150 constitutes a unit pixel and is electrically connected to the first electrode 120. For example, the first electrodes 120 may be a plurality of semiconductor light emitting devices, and the semiconductor light emitting devices may be electrically connected to any one of the plurality of first electrodes.

Also, since the semiconductor light emitting devices are connected in a flip chip form, the semiconductor light emitting devices grown on the transparent dielectric substrate can be used. The semiconductor light emitting devices may be, for example, a nitride semiconductor light emitting device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size.

According to the structure, the barrier ribs 190 may be formed between the semiconductor light emitting devices 150. In this case, the barrier ribs 190 may separate the individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130. For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier 190 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, the barrier ribs 190 may be provided separately from the reflective barrier ribs. In this case, the barrier rib 190 may include a black or white insulation depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 converts the blue (B) light into the color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 151 at a position forming a red unit pixel, A green phosphor 182 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 151. [ In addition, only the blue semiconductor light emitting element 151 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel. More specifically, phosphors of one color may be stacked along each line of the first electrode 120. Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. In other words, red (R), green (G), and blue (B) may be arranged in order along the second electrode 140, thereby realizing a unit pixel.

(R), green (G), and blue (B) unit pixels may be implemented by combining the semiconductor light emitting device 150 and the quantum dot QD instead of the fluorescent material. have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 can improve the contrast of light and dark.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied.

5A, each of the semiconductor light emitting devices 150 includes gallium nitride (GaN), indium (In) and / or aluminum (Al) are added together to form a high output light Device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a unit pixel (sub-pixel), respectively. For example, red, green, and blue semiconductor light emitting elements R, G, and B are alternately arranged, and red, green, and blue unit pixels Form a single pixel, through which a full color display can be implemented.

Referring to FIG. 5B, the semiconductor light emitting device may include a white light emitting device W having a yellow phosphor layer for each individual device. In this case, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the white light emitting element W to form a unit pixel. Further, a unit pixel can be formed by using a color filter in which red, green, and blue are repeated on the white light emitting element W.

Referring to FIG. 5C, a red phosphor layer 181, a green phosphor layer 182, and a blue phosphor layer 183 may be provided on the ultraviolet light emitting element UV. As described above, the semiconductor light emitting device can be used not only for visible light but also for ultraviolet (UV), and can be extended to a form of a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor .

The semiconductor light emitting device 150 is disposed on the conductive adhesive layer 130 and constitutes a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 150 may be 80 mu m or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

Also, even if a square semiconductor light emitting device 150 having a length of 10 m on one side is used as a unit pixel, sufficient brightness for forming a display device appears. Accordingly, when the unit pixel is a rectangular pixel having a side of 600 mu m and the other side of 300 mu m as an example, the distance of the semiconductor light emitting element becomes relatively large. Accordingly, in such a case, it becomes possible to implement a flexible display device having HD picture quality.

The display device using the semiconductor light emitting device described above can be manufactured by a novel manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG.

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

The conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are disposed. A first electrode 120, an auxiliary electrode 170, and a second electrode 140 are formed on the wiring substrate, and the insulating layer 160 is formed on the first substrate 110 to form a single substrate (or a wiring substrate) . In this case, the first electrode 120 and the second electrode 140 may be arranged in mutually orthogonal directions. In addition, the first substrate 110 and the insulating layer 160 may include glass or polyimide (PI), respectively, in order to implement a flexible display device.

The conductive adhesive layer 130 may be formed, for example, by an anisotropic conductive film, and an anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is disposed.

A second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and having a plurality of semiconductor light emitting elements 150 constituting individual pixels is disposed on the semiconductor light emitting element 150 Are arranged so as to face the auxiliary electrode 170 and the second electrode 140.

In this case, the second substrate 112 is a growth substrate for growing the semiconductor light emitting device 150, and may be a spire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in units of wafers, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size at which a display device can be formed.

Then, the wiring substrate and the second substrate 112 are thermally bonded. For example, the wiring board and the second substrate 112 may be thermocompression-bonded using an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity due to the characteristics of the anisotropic conductive film having conductivity by thermocompression, The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, and partition walls may be formed between the semiconductor light emitting devices 150.

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO).

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating a wiring substrate on which the semiconductor light emitting device 150 is coupled with silicon oxide (SiOx) or the like.

Further, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red phosphor or a green phosphor for converting the blue (B) A layer can be formed on one surface of the device.

The manufacturing method and structure of the display device using the semiconductor light emitting device described above can be modified into various forms. For example, a vertical semiconductor light emitting device may be applied to the display device described above. Hereinafter, the vertical structure will be described with reference to Figs. 5 and 6. Fig.

In the modifications or embodiments described below, the same or similar reference numerals are given to the same or similar components as those of the previous example, and the description is replaced with the first explanation.

8 is a cross-sectional view taken along the line DD of FIG. 7, and FIG. 9 is a conceptual view illustrating a vertical semiconductor light emitting device of FIG. 8. FIG. 7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, to be.

Referring to these drawings, the display device may be a display device using a passive matrix (PM) vertical semiconductor light emitting device.

The display device includes a substrate 210, a first electrode 220, a conductive adhesive layer 230, a second electrode 240, and a plurality of semiconductor light emitting devices 250.

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed. The substrate 210 may include polyimide (PI) to implement a flexible display device. In addition, any insulating and flexible material may be used.

The first electrode 220 is disposed on the substrate 210 and may be formed as a long bar electrode in one direction. The first electrode 220 may serve as a data electrode.

A conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is located. The conductive adhesive layer 230 may be formed of an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing a conductive particle, or the like, as in a display device using a flip chip type light emitting device. ) And the like. However, the present embodiment also exemplifies the case where the conductive adhesive layer 230 is realized by the anisotropic conductive film.

If the semiconductor light emitting device 250 is connected to the semiconductor light emitting device 250 by applying heat and pressure after the anisotropic conductive film is positioned in a state where the first electrode 220 is positioned on the substrate 210, And is electrically connected to the electrode 220. In this case, the semiconductor light emitting device 250 may be disposed on the first electrode 220.

As described above, the electrical connection is generated because heat and pressure are applied to the anisotropic conductive film to partially conduct in the thickness direction. Therefore, in the anisotropic conductive film, it is divided into a portion having conductivity in the thickness direction and a portion having no conductivity.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 realizes electrical connection as well as mechanical bonding between the semiconductor light emitting element 250 and the first electrode 220.

Thus, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. The size of the individual semiconductor light emitting device 250 may be 80 μm or less on one side and may be a rectangular or square device. In the case of a rectangle, the size may be 20 X 80 μm or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 electrically connected to the vertical semiconductor light emitting device 250 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220.

9, the vertical type semiconductor light emitting device includes a p-type electrode 256, a p-type semiconductor layer 255 formed on the p-type electrode 256, an active layer 254 formed on the p-type semiconductor layer 255 An n-type semiconductor layer 253 formed on the active layer 254 and an n-type electrode 252 formed on the n-type semiconductor layer 253. In this case, the p-type electrode 256 located at the bottom may be electrically connected to the first electrode 220 by the conductive adhesive layer 230, and the n-type electrode 252 located at the top may be electrically connected to the second electrode 240 As shown in FIG. Since the vertical semiconductor light emitting device 250 can arrange the electrodes up and down, it has a great advantage that the chip size can be reduced.

Referring to FIG. 8 again, a phosphor layer 280 may be formed on one side of the semiconductor light emitting device 250. For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 that emits blue (B) light, and a phosphor layer 280 for converting the blue (B) . In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light can be laminated on the blue semiconductor light emitting element 251 at a position forming a red unit pixel, A green phosphor 282 capable of converting blue light into green (G) light may be laminated on the blue semiconductor light emitting element 251. In addition, only the blue semiconductor light emitting element 251 can be used alone in a portion constituting a blue unit pixel. In this case, the unit pixels of red (R), green (G), and blue (B) can form one pixel.

However, the present invention is not limited thereto, and other structures for implementing blue, red, and green may be applied to a display device to which a flip chip type light emitting device is applied, as described above.

The second electrode 240 is located between the semiconductor light emitting devices 250 and electrically connected to the semiconductor light emitting devices 250. For example, the semiconductor light emitting devices 250 may be disposed in a plurality of rows, and the second electrode 240 may be disposed between the columns of the semiconductor light emitting devices 250.

The second electrode 240 may be positioned between the semiconductor light emitting devices 250 because the distance between the semiconductor light emitting devices 250 forming the individual pixels is sufficiently large.

The second electrode 240 may be formed as a long bar-shaped electrode in one direction and may be disposed in a direction perpendicular to the first electrode.

The second electrode 240 and the semiconductor light emitting device 250 may be electrically connected by a connection electrode protruding from the second electrode 240. More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250. For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a part of the ohmic electrode by printing or vapor deposition. Accordingly, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 can be electrically connected.

According to the example, the second electrode 240 may be disposed on the conductive adhesive layer 230. A transparent insulating layer (not shown) containing silicon oxide (SiOx) or the like may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as ITO (Indium Tin Oxide) is used for positioning the second electrode 240 on the semiconductor light emitting device 250, the problem that the ITO material has poor adhesion with the n-type semiconductor layer have. Accordingly, the present invention has an advantage in that the second electrode 240 is positioned between the semiconductor light emitting devices 250, so that a transparent electrode such as ITO is not used. Therefore, the light extraction efficiency can be improved by using a conductive material having good adhesiveness with the n-type semiconductor layer as a horizontal electrode without being bound by transparent material selection.

According to the structure, the barrier ribs 290 may be positioned between the semiconductor light emitting devices 250. That is, the barrier ribs 290 may be disposed between the vertical semiconductor light emitting devices 250 to isolate the semiconductor light emitting devices 250 forming the individual pixels. In this case, the barrier ribs 290 may separate the individual unit pixels from each other, and may be formed integrally with the conductive adhesive layer 230. For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film can form the partition.

Also, if the base member of the anisotropic conductive film is black, the barrier ribs 290 may have a reflection characteristic and a contrast may be increased without a separate black insulator.

As another example, as the partition 190, a reflective barrier may be separately provided. The barrier ribs 290 may include black or white insulators depending on the purpose of the display device.

If the second electrode 240 is directly disposed on the conductive adhesive layer 230 between the semiconductor light emitting devices 250, the barrier ribs 290 may be formed between the vertical semiconductor light emitting device 250 and the second electrode 240 As shown in FIG. Therefore, individual unit pixels can be formed with a small size by using the semiconductor light emitting device 250, and the distance between the semiconductor light emitting device 250 can be relatively large enough so that the second electrode 240 can be electrically connected to the semiconductor light emitting device 250 ), And it is possible to realize a flexible display device having HD picture quality.

In addition, according to the present invention, a black matrix 291 may be disposed between the respective phosphors to improve the contrast. That is, this black matrix 291 can improve the contrast of light and dark.

As described above, the semiconductor light emitting device 250 is disposed on the conductive adhesive layer 230, thereby forming individual pixels in the display device. Since the semiconductor light emitting device 250 has excellent brightness, individual unit pixels can be formed with a small size. Therefore, a full color display in which red (R), green (G), and blue (B) unit pixels form one pixel can be realized by the semiconductor light emitting device.

In the above-described display using the semiconductor light emitting device of the present invention, the semiconductor light emitting device grown on the growth substrate is transferred to the wiring substrate using an anisotropic conductive film (ACF). However, this method has a disadvantage in that it is difficult to secure manufacturing reliability and a manufacturing cost is high.

In particular, in the case of digital signage, since the property of flexible is not required, a different approach is required for a display using a semiconductor light emitting element.

Hereinafter, in order to overcome the above-described technical difficulties and to achieve a high-resolution display based on an ultra-small micro-LED, the present invention provides a novel blue LED display-based pixel structure having a size of several to several tens of micrometers Lt; / RTI >

Also, in digital signage, it is possible to use multi-panel for the realization of a large screen, but as the super-high picture quality is reduced, the pitch is reduced (around several tens of um) and the adjustment precision between the panels must be very high. In addition, it is difficult to realize a multi-panel in which light leakage does not occur due to machining and manufacturing errors of components and errors generated during assembly. In order to overcome such a problem, the present invention proposes a structure capable of easily adjusting the interval between the panels when assembling the multi-panel.

Hereinafter, a display device according to another embodiment of the present invention that utilizes a multi-panel will be described in detail with reference to the drawings, taking digital signage as an example.

FIG. 10 is a conceptual diagram showing an embodiment of digital signage using the semiconductor light emitting device of the present invention, FIG. 11 is a partial perspective view for explaining one panel portion of FIG. 10, FIG. 13 is a cross-sectional view taken along the line FF of FIG. 11, FIG. 14 is a plan view of the semiconductor light emitting device package of the present invention, and FIG. 15 is a plan view of the support substrate.

16A and 16B are a rear perspective view and a front conceptual view for explaining an assembling structure in which the panel of FIG. 11 is assembled with a peripheral panel, FIG. 17 is an enlarged view of one frame of FIG. 16, 18b are an enlarged view and a cross-sectional view of the adjustment bracket, and Figs. 19 and 20 are operation diagrams for adjusting the interval between panels in the present invention, respectively.

10, 11, 12, 13, 14, and 15, a display device using a semiconductor light emitting device includes a digital signage (DS). However, the example described below is also applicable to an active matrix (AM) semiconductor light emitting device.

The display device includes a display panel DP and a case DC, and the display panel DP includes a plurality of light sources 1000.

Each of the plurality of light sources 1000 is one display panel, and is disposed on the front surface of the case DC to display time information. In addition to supporting the plurality of light source units 1000, the case DC may be formed to form a space for accommodating the electronic components.

The plurality of light source units 1000 are formed in a rectangular shape and can be sequentially arranged in the row and column directions. In this case, the plurality of light sources may each include a plurality of RGB pixels. The pitch of the plurality of RGB pixels is constant, and the pitch can be maintained between neighboring light sources, for example, between the first light source 1000a and the second light source 1000b. In addition, the gap between the plurality of light sources is not provided, so that light leakage can be prevented.

In this example, a mechanism for implementing such a pitch with a constant interval and a structure without a gap is described, and the structure of the plurality of light sources 1000 will be described in detail.

11, 12, 13, 14, and 15, the plurality of light source portions 1000 include a substrate 1010 and a plurality of semiconductor light emitting device packages 1050, respectively.

The substrate 1010 may be a wiring substrate on which the first electrode 1020 and the second electrode 1040 are disposed. Accordingly, the first electrode 1020 and the second electrode 1040 may be positioned on the substrate 1010. At this time, the first electrode 1020 and the second electrode 1040 may be wiring electrodes.

The substrate 1010 may be formed of an insulating material, but not a flexible material. Further, the substrate 1010 may be either a transparent material or an opaque material.

Referring to these drawings, a semiconductor light emitting device package 1050 is coupled to one surface of a substrate 1010. For example, an electrode of the semiconductor light emitting device package 1050 may be coupled to the wiring electrode by soldering or the like. In this case, the conductive adhesive layer described in the previous embodiment can be excluded.

One semiconductor light emitting device package 1050 includes a plurality of semiconductor light emitting devices 1051, 1052, and 1053, a conversion layer 1080, and a plurality of semiconductor light emitting device packages 1030. The plurality of semiconductor light emitting device packages 1050 are chamfered on a wafer, And a substrate 1090.

Each of the plurality of semiconductor light emitting devices 1051, 1052 and 1053 is a high output light emitting device that mainly uses gallium nitride (GaN) and is doped with indium (In) and / or aluminum (Al) Can be implemented.

For example, the plurality of semiconductor light emitting devices 1050 may be gallium nitride thin films formed in various layers such as n-Gan, p-Gan, AlGaN, and InGan. However, the present invention is not limited thereto, and the plurality of semiconductor light emitting devices 1050 may be implemented as a light emitting device that emits green light.

As a more specific example, the semiconductor light emitting device 1050 may be a flip chip type light emitting device. The semiconductor light emitting device 1050 includes a first conductive type semiconductor layer 1155 on which a first conductive type electrode 1156, a first conductive type electrode 1156 are formed, a first conductive type semiconductor layer 1155 formed on the first conductive type semiconductor layer 1155, The second conductive type semiconductor layer 1153 formed on the active layer 1154 and the second conductive type semiconductor layer 1153 on the second conductive type semiconductor layer 1153, Type electrode 1152, In this case, the first conductive type electrode 1156 and the first conductive type semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, and the second conductive type electrode 1152 and the second -Type semiconductor layer 1153 may be an n-type electrode and an n-type semiconductor layer. In addition, the active layer 1154 may be formed between the p-type semiconductor layer and the n-type semiconductor layer.

According to the illustration, the plurality of semiconductor light emitting devices 1051, 1052, and 1053 are three subpixels, which are combined to constitute one RGB pixel. That is, the plurality of semiconductor light emitting devices 1051, 1052, and 1053 form a red subpixel RSP, a green subpixel GSP, and a blue subpixel BSP, respectively. In this case, the semiconductor light emitting devices 1051 and 1052 corresponding to at least one of the red subpixel RSP and the green subpixel GSP may include a semiconductor light emitting device 1053 corresponding to the blue subpixel BSP, And have different light emission areas.

For example, the plurality of semiconductor light emitting devices may include a first semiconductor light emitting device 1051, a second semiconductor light emitting device 1052, and a second semiconductor light emitting device 1052 coupled to the support substrate 1090 to form one semiconductor light emitting device package 1050 And a third semiconductor light emitting element 1053. Only the first semiconductor light emitting device 1051, the second semiconductor light emitting device 1052 and the third semiconductor light emitting device 1053 are provided in one package, and they may be blue light emitting devices having different light emitting areas. The first semiconductor light emitting device 1051, the second semiconductor light emitting device 1052, and the third semiconductor light emitting device 1053 may have the same size as each other, Area.

In this embodiment, the first semiconductor light emitting device 1051, the second semiconductor light emitting device 1052, and the third semiconductor light emitting device 1053 are formed in different sizes to form the red subpixels RSP, (GSP) and blue subpixel (BSP), respectively. As an example, the n-type semiconductor layer of any one of the semiconductor light emitting devices may have a top surface different from that of the n-type semiconductor layer of the other semiconductor light emitting device. The upper surface may be a surface farthest from the wiring substrate, and may be an emission surface through which light is emitted from the semiconductor light emitting device. That is, each of the n-type semiconductor layers is formed in a rectangular parallelepiped shape, but the first semiconductor light emitting device 1051, the second semiconductor light emitting device 1052, and the third semiconductor light emitting device 1053 have upper and lower surfaces having different areas .

An undoped semiconductor layer may be formed on the upper surface of the n-type semiconductor layer. In this case, a top surface farthest from the wiring substrate in the undoped semiconductor layer may emit light from the semiconductor light emitting element Can be an emerging aspect. Furthermore, fine grooves may be formed on the undoped semiconductor layer by roughing.

In addition, according to the example, any one of the plurality of semiconductor light emitting devices 1051, 1052, and 1053 may have a different shape from the other p-type semiconductor layer. For example, the second semiconductor light emitting device 1052 and the third semiconductor light emitting device 1053 are each formed in a rectangular parallelepiped shape, but the first semiconductor light emitting device 1051 may have a different shape. In this case, the second semiconductor light emitting device 1052 and the third semiconductor light emitting device 1053 may have different areas on the upper and lower surfaces, respectively.

The p-type semiconductor layer of the semiconductor light emitting device corresponding to the green subpixel (GSP) is made larger in area than the p-type semiconductor layer of the semiconductor light emitting device corresponding to the blue subpixel (BSP). The p-type semiconductor layer of the semiconductor light emitting device corresponding to the red subpixel (RSP) has a shape extending in both directions perpendicular to each other. For example, the p-type semiconductor layer can be formed in a shape in which two rectangular parallelepipeds are integrated. In detail, the p-type semiconductor layer of the first semiconductor light emitting device 1051 includes a base portion 1155a extending in parallel with the p-type semiconductor layer of the second semiconductor light emitting device 1052, And a protrusion 1155b protruding in a direction perpendicular to the p-type semiconductor layer of the second semiconductor light emitting device. Therefore, the area of the p-type semiconductor layer of the first semiconductor light emitting device 1051 can be maximized.

the active layer 1154 overlapping the p-type semiconductor layer is also formed in the first semiconductor light emitting device 1051, the second semiconductor light emitting device 1052, and the third semiconductor light emitting device 1053, respectively. Accordingly, the first semiconductor light emitting device 1051, the second semiconductor light emitting device 1052, and the third semiconductor light emitting device 1053 have different light emitting areas.

As described above, in this example, since the red light emitting area having the small light efficiency is the largest, the amount of red light is sufficient even if the driving currents of the respective sub pixels are the same. The efficiency is better than that of red, but even in the case of green which is lower than blue, a sufficient amount of light can be secured even if the driving current is made equal to the blue pixel. The light efficiency is different in each sub-pixel, in the present example, by using the conversion layer and the blue semiconductor light emitting element.

As described above, the semiconductor light emitting device package 1050 may include a conversion layer 1080 disposed to cover the plurality of semiconductor light emitting devices 1051, 1052, and 1053. [ For example, the semiconductor light emitting devices are blue semiconductor light emitting devices that emit blue (B) light, and the conversion layer 1080 has a function of converting the blue (B) light into colors such as yellow, white, red, . At this time, colors to be converted by the respective pixels may be different from each other. As an example, it is also possible to convert blue light into yellow light in a green pixel and blue light in a red pixel to a wavelength in which red and yellow are mixed.

According to the illustration, the conversion layer 1080 includes a plurality of phosphor portions 1081 and 1082 for converting the wavelength of light. In this case, a partition wall 1084 may be formed between the plurality of phosphor portions 1081 and 1082.

For example, the plurality of phosphor portions 1081 and 1082 include a first phosphor portion 2081 disposed at a position corresponding to a red pixel and a second phosphor portion 1082 disposed at a position corresponding to a green pixel . In this case, each of the first phosphor portion 1081 and the second phosphor portion 1082 is provided with a red phosphor capable of converting the blue light of the blue semiconductor light emitting elements 1051 and 1052 into red light or green light, A phosphor may be provided. At this time, a light-transmissive material 1083 that does not convert color may be disposed at the position of the blue pixel. The light transmitting material 1083 is a material having a high transmittance in the visible light region, for example, epoxy-based PR (photoresist), PDMS (polydimethylsiloxane), resin, or the like can be used.

As another example, the first phosphor portion 1081 and the second phosphor portion 1082 may be provided with a yellow phosphor capable of converting the blue light of the blue semiconductor light emitting elements 1051 and 1052 into yellow light or white light have. In this case, yellow light or white light can be converted into red, green, and blue through the color filter.

On the other hand, the plurality of phosphor portions 1081 and 1082 can be partitioned by barrier ribs 1084. To this end, the plurality of semiconductor light emitting device packages may include barrier ribs 1084, respectively. The barrier ribs 1084 may serve to separate individual subpixels from each other, and may be disposed between the semiconductor light emitting devices.

The barrier ribs 1084 may include photoresists, optical polymer materials, and other industrial plastic materials. Further, the barrier ribs 1084 may be formed separately from the reflective barrier ribs. In this case, the barrier ribs 1084 may include black or white insulators depending on the purpose of the display device. When a barrier of a white insulator is used, an effect of enhancing reflectivity may be obtained. When a barrier of a black insulator is used, a contrast characteristic may be increased while having a reflection characteristic.

Further, a reflection film structure for improving the reflection characteristic can be introduced on the barrier rib 1084. That is, reflection films having various structures such as metal, dielectric thin film, and the like may be disposed on both sides of the barrier rib 1084.

For the structure in which the individual subpixels are separated from each other as unit pixels and are combined to form one pixel and the pixels are mounted on the wiring substrate as one package, the partition wall 1084 is divided into the edge portion 1085, (Not shown). The edge portion 1085 is formed along the edge of each of the packages, and the partition portion 1086 protrudes from the edge portion 1085 to partition the red subpixel, the green subpixel, and the blue subpixel .

According to the structure, the semiconductor light emitting device package has a rectangular plane and is divided into three regions having different areas by the partition walls. The three regions are regions corresponding to the respective subpixels, and the partition 1086 may have a first portion 1086a and a second portion 1086b in order to change the areas thereof.

For example, the first portion 1086a extends in one direction, and the second portion 1086b protrudes from the first portion 1086a in a direction perpendicular to the one direction. Specifically, the first portion 1086a is disposed between the first semiconductor light emitting element 1051 and the third semiconductor light emitting element 1053 and the second semiconductor light emitting element 1052. [ The second portion 1086b protrudes from the first portion 1086a in a direction perpendicular to the first portion 1086a to divide the first semiconductor light emitting element 1051 and the third semiconductor light emitting element 1053, do. Through such a structure, in the compact space, each of the plurality of phosphor portions 1081 and 1082 and the portion filled with the light-permeable material corresponding to blue may have different areas.

According to the drawing, a color filter CF is disposed so as to cover the conversion layer 1080. More specifically, the color filter CF and the wavelength conversion layer 1080 can be bonded by an adhesive layer (not shown). For example, as the adhesive layer is disposed between the color filter CF and the conversion layer 1080, the color filter CF may be attached to the conversion layer 1080.

In this case, the color filter CF is made to transmit red light, green light and blue light selectively. The color filter CF has respective portions for filtering a red wavelength, a green wavelength, and a blue wavelength, and each of the portions may have a structure in which the portions are repeatedly arranged. At this time, a portion CF1 for filtering red and a portion CF2 for filtering green are arranged above the first phosphor portion 1081 and the second phosphor portion 1082, A portion CF3 for filtering blue to cover the transmissive material 1083 may be disposed. A black matrix BM may be disposed between the portions to be peeled CF1, CF2, and CF3.

Thus, in this example, red, green, and blue unit pixels are implemented in combination with the conversion layer 1080, the partition wall 1084, and the color filter CF.

The subpixels implemented by the above structure are supported by the supporting substrate 1090.

The supporting substrate 1090 includes a first region 1091 in which a first semiconductor light emitting element 1051, a second semiconductor light emitting element 1052 and a third semiconductor light emitting element 1053 are disposed, A second region 1092, and a third region 1093. In this case, the first region 1091, the second region 1092, and the third region 1093 may be regions having different sizes. More specifically, the first region 1091, the second region 1092, and the third region 1093 may be regions corresponding to the red subpixel, the green subpixel, and the blue subpixel, respectively. Therefore, the boundaries of the first region 1091, the second region 1092, and the third region 1093 can be set by the partition wall 1084.

The supporting substrate 1090 is formed of a silicon material, and a through silicon via (TSV) is formed on the supporting substrate 1090.

The silicon penetration electrode (TSV) may be formed by filling a via hole with a conductive material. As described above, by using the supporting substrate 1090 having the silicon penetrating electrode TSV, one-to-one transfer at the wafer level can be made very easy.

More specifically, since the supporting substrate 1090 is a silicon substrate that can be etched, a silicon through electrode (TSV) can be formed by the etching. The silicon penetrating electrode TSV penetrates the supporting substrate 1090 at a position overlapping the semiconductor light emitting device.

The plurality of silicon penetration electrodes (TSV) may be provided to correspond to the respective semiconductor light emitting devices. The first penetrating electrode TSV1, the second penetrating electrode TSV2, and the second penetrating electrode TSV2 are formed so as to correspond to the first semiconductor light emitting element 1051, the second semiconductor light emitting element 1052, and the third semiconductor light emitting element 1053, The third penetrating electrode TSV3 may be disposed. In this case, the first penetrating electrode TSV1, the second penetrating electrode TSV2 and the third penetrating electrode TSV3 are connected to the first semiconductor light emitting element 1051, the second semiconductor light emitting element 1052, And may be electrically connected to the second conductive type electrode of the semiconductor light emitting element 1053. The electrode pad 1094 may be disposed on one side of the supporting substrate to cover the first penetrating electrode TSV1, the second penetrating electrode TSV2, and the third penetrating electrode TSV3.

On the other hand, a fourth penetrating electrode TSV4 (not shown) electrically connected to the first conductive type electrode of the first semiconductor light emitting device 1051, the second semiconductor light emitting device 1052, and the third semiconductor light emitting device 1053 is formed on the supporting substrate. May be provided. For example, a common electrode 1095 may be formed on the supporting substrate 1090 to be connected to the first conductive electrodes of the plurality of semiconductor light emitting devices.

The common electrode 1095 extends to the fourth penetrating electrode TSV4 so that the first semiconductor light emitting element 1051, the second semiconductor light emitting element 1052 and the third semiconductor light emitting element 1053 The conductive electrode is electrically connected to the other side of the supporting substrate with the fourth penetrating electrode TSV4 as a common penetrating electrode. A lower electrode 1096 may be disposed under the first penetrating electrode TSV1, the second penetrating electrode TSV2, the third penetrating electrode TSV3, and the fourth penetrating electrode TSV4.

According to the structure described above, the silicon penetration electrodes include one penetrating electrode TSV4 connected to the common electrode, and a plurality of penetrating electrodes TSV4 connected to the second conductive electrodes of the plurality of semiconductor light emitting devices, (TSV1, TSV2, TSV3).

The plurality of semiconductor light emitting device packages may include an insulating layer 1086 covering the plurality of semiconductor light emitting devices on the opposite side of the conversion layer 1080 with reference to the plurality of semiconductor light emitting devices, .

The insulating layer 1086 is an underfill layer for filling the space between the semiconductor light emitting elements and is formed on one surface of the supporting substrate 1090 so that the semiconductor light emitting elements are attached to the supporting substrate. For this, the insulating layer 1086 may be made of a material having adhesiveness in addition to insulation.

In addition, the insulating layer 1086 may be formed of a material having high light reflectivity in order to remove optical interference between individual elements and improve light extraction. However, the present invention is not limited thereto. For example, the insulating layer 1086 may include resin and reflective particles. The resin may be laminated on the support substrate to fill the space between the plurality of semiconductor light emitting elements, and the reflection particles may be mixed with the resin.

In this case, the resin may include at least one of acrylic, epoxy, polyimide, a coating agent mixed with a polymer, or a photoresist. The reflective particles may have at least one of titanium oxide, alumina, magnesium oxide, antimony oxide, zirconium oxide, and silica. On the other hand, the reflective particles may be a white pigment.

According to the structure described above, the semiconductor light emitting device package forms a pixel by using the supporting substrate 1090 as a unit substrate. That is, the semiconductor light emitting device package 1050 is chamfered through dicing or the like on the wafer, and can be moved to the substrate 1010 by pick and play or the like.

For example, the substrate 1010 may be a wiring board. Between the wiring board and the semiconductor light emitting device package 1050, the wiring 1040 may be formed of a material having a lower melting point than the wiring electrodes 1020 and 1040 of the wiring substrate. A low melting point portion 1097 can be disposed. As a specific example, a low-melting point portion 1097 is disposed between the wiring electrodes 1020 and 1040 of the wiring substrate and the lower electrode 1096 of the supporting substrate 1090 to realize electrical coupling. However, the present invention is not necessarily limited thereto, and the low melting point portion 1097 may surround the wiring electrode and the conductive electrodes of the plurality of semiconductor light emitting devices, respectively.

As an example, the low melting point portion 1097 may be plated on the wiring electrode with a solder material. The solder material may be at least one of, for example, Sb, Pd, Ag, Au and Bi. In this case, solder is deposited on the wiring electrode, and soldering can be performed using thermal energy.

According to the illustrated example, the wiring board may have a larger area than the supporting board 1090. A plurality of support substrates may be arranged on the wiring board 1010 at predetermined intervals, and one light source unit may be realized.

In this case, the interval between the semiconductor light emitting device packages in one light source portion can be set to be the same. These intervals can be set to the same in other light sources. The semiconductor light emitting device package of the first light source unit 1000a and the semiconductor light emitting unit 1000b of the second light source unit 1000b may be disposed in the neighboring first light source unit 1000a and the second light source unit 1000b, The spacing of the device packages is equal to the spacing of the semiconductor light emitting device packages in one light source portion.

16A, 16B, 17, 18A and 18B, the display device may include a plurality of frames 2100, an elastic member 2200, and an adjustment bracket 2300.

The plurality of light source units 1000 may be disposed on one side of the plurality of frames 2100, respectively. As an example, one light source can be mounted on one frame.

For example, the plurality of frames 2100 may be formed in a flat plate shape, and the substrate of the light sources may be mounted on the front surface. In this case, the length of one side of the light source unit 1000 may be longer than the length of one side of the frame 2100 so that the edge of the light source unit 1000 protrudes from the edge of the frame 2100. More specifically, the size of the light source unit 1000 may be set larger than that of the frame 2100 that fixes the light source unit 1000.

In this case, if the length of the light source unit 1000 is set to be smaller than the length of the frame 2100, the interval of the semiconductor light emitting device packages between the neighboring light source units 1000a and 1000b becomes large, It is impossible to implement the pitch of the pitch. That is, although pitches 1 and 2 shown in FIG. 16B are equal to each other, equal spacing is realized in the display device. However, in such a structure, adjustment of the pitch 1 is difficult.

In order to solve this problem, in this example, the length of the light source unit 1000 is longer than the length of the frame 2100, and the distance between the side of the light source unit 1000 and the semiconductor light emitting device is shorter than the interval of the semiconductor light emitting device package Setting. Also, the space between the neighboring light sources 1000a and 1000b is widened to increase the interval between the adjacent light sources 1000a and 1000b to a predetermined pitch. At this time, the space between the neighboring light source portions 1000a and 1000b may be covered by the elastic member 2200.

The elastic member 2200 may be a leaf spring, an elastic rubber, or the like disposed on a side surface of the plurality of frames, and may be mounted near the edge of the flat plate. The elastic member 2200 is configured to cover a gap formed between the neighboring light sources. For example, the edge of the protruding light source part is arranged to cover at least a part of the elastic member 2200, and the elastic member 2200 extends from the edge of the protruded light source part, .

In this case, the elastic member 2200 may contact at least one of the neighboring light sources 1000a and 1000b to emit heat. For the heat release, the elastic member 2200 may be made of a material having good thermal conductivity. For example, the elastic member 2200 may be a heat dissipation pad, and in this case, it may lead to a heat dispersion effect of the frame.

Since the elastic member 2200 exerts an elastic force on the neighboring frame or neighboring light sources 1000a and 1000b so that the interval between adjacent light sources 1000a and 1000b is adjusted by moving the frames 2100 . For this, the adjustment bracket 2300 may be disposed on the other side of the plurality of frames 2100. A fixing bracket 2400 may be coupled to the other surface of the plurality of frames.

The adjustment bracket 2300 and the fixing bracket 2400 may be disposed on both sides disposed on the opposite sides of the frame. In this case, the adjustment bracket 2300 is one of a plurality of adjustment brackets disposed on either side of the frame, and the fixing bracket 2400 is one of a plurality of fixing brackets disposed on the other side of the frame . As an example, a plurality of adjustment brackets or a plurality of fixing brackets may be disposed on each side of the frame. In this embodiment, two fixing brackets are arranged on the left side and the upper side of the frame, respectively, and two adjustment brackets are arranged on the right side and the lower side of the frame, respectively.

17, the adjustment bracket 2300 may include a first portion 2310 disposed in the frame and a second portion 2320 protruding in a direction perpendicular to the first portion 2310 have.

The first portion 2310 is a portion disposed on the rear surface of the frame, and may be formed in a flat plate shape. The second portion 2320 protrudes from one side of the first portion 2310 and may be disposed at the edge of the frame.

Assembly holes 2311 and 2321 may be formed in the first portion 2310 and the second portion 2320, respectively. In this case, the assembly hole 2321 of the second portion 2320 may be fastened to a fixing bracket provided in a neighboring frame.

The fixing bracket 2400 may have the same shape as the adjusting bracket. That is, the fixing bracket 2400 may include a first portion 2410 disposed in the frame and a second portion 2420 protruding in a direction perpendicular to the first portion 2410.

The second portion 2420 is disposed at the edge of the frame like the adjustment frame, and is formed in surface contact with the adjustment bracket of the neighboring frame. The first portion 2410 of the fixing bracket 2400 is provided with a fastening hole 2411 for connection with the frame and the second portion 2420 is provided with an adjusting bracket provided on a neighboring frame, A fastening hole 2421 to be fastened to the assembly hole 2321 of the second portion 2320 can be formed.

The fixing bracket 2400 is fastened to the adjustment bracket disposed in the neighboring frame through the assembly hole 2321 and the fastening hole 2421. At this time, the adjusting bracket 2300 is provided with an adjusting hole 2312, at least one side of which is inclined with respect to the direction of one surface of the plurality of frames, so as to adjust the interval of the neighboring light sources by moving the frames 2100, Can be formed.

The adjustment hole 2312 may have an inclined surface 2313 so that the cross section of the adjustment hole 2312 decreases along the direction away from the frame 2100. [ In this case, when the adjusting rod AD is inserted, the outer circumferential surface of the adjusting rod AD presses the inclined surface 2313, so that the frame 2100 moves in a direction perpendicular to the adjusting hole 2312 . With this, fine adjustment of the frame 2100 becomes possible. In this case, a circumferential projection AD1 for pressing the inclined surface 2313 may be formed on the outer circumferential surface of the adjustment rod AD.

For the fine adjustment, a frame hole 2101 corresponding to the adjustment hole 2312 may be formed in the frame 2100. At this time, a thread corresponding to the thread of the adjusting rod can be formed in the frame hole 2101.

According to the structure described above, it is possible to finely adjust the intervals of the light sources, which will be described in more detail below.

19 (b) and 19 (c), when the adjusting rod AD is turned to the right, the adjusting rod AD is lowered along the thread of the frame hole 2101 and the inclined adjusting bracket 2300 is pushed The adjustment bracket 2300 is moved. The adjacent frames are moved as shown in FIGS. 19 (a) and 19 (d) because the fixing bracket 2400 of the frame adjacent to the adjusting bracket 2300 is connected. Accordingly, the neighboring light sources 1000a and 1000b, . The feature of this method is that the pitch of the thread can be adjusted to make a very fine adjustment and the amount of adjustment due to the shaking of the adjusting rod does not change when adjusting by screwing. It also has the advantage that the adjustment range can be increased to the depth of the thread and the adjustment amount is very constant.

20B and 20C, when the adjusting rod AD is turned to the left, the adjusting rod AD rises along the thread of the frame hole 2101. In this case, as shown in FIGS. 20A and 20D, the adjustment bracket 2300 is pushed while the restoring force of the elastic member 2200 is applied to adjust the gap. A space is generated between the adjacent light sources 1000a and 1000b, but the elastic member 2200 fills it to prevent light leakage.

In the display device according to the present invention described above, it is possible to adjust very precisely between the panels by adjusting the interval between the panels using an adjustment method using threads using an adjustment rod without eccentricity. Furthermore, ultra-high-quality panels with very small pitches can be implemented with a large screen without dark lines.

The above-described display device using the semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but all or a part of the embodiments may be selectively combined so that various modifications may be made to the embodiments It is possible.

Claims (15)

A plurality of frames;
A plurality of light source units disposed on one side of the plurality of frames, the light source units including a substrate, and a plurality of semiconductor light emitting devices mounted on the substrate;
An elastic member mounted on the plurality of frames and applying an elastic force to the neighboring frames; And
And an adjustment bracket disposed on the other side of the plurality of frames,
Wherein the adjustment bracket is formed with an adjusting hole that is inclined at least one side thereof with respect to a direction of one side of the plurality of frames so as to adjust the interval of the adjacent light sources by moving the plurality of frames. The method according to claim 1,
Wherein a length of one side of the light source unit is longer than a length of one side of the frame so that an edge of the light source unit protrudes from an edge of the frame. 3. The method of claim 2,
And the edge of the protruded light source portion is arranged to cover at least a part of the elastic member. The method according to claim 1,
Wherein the elastic member is disposed on a side surface of the plurality of frames. 5. The method of claim 4,
Wherein the elastic member covers a gap formed between the neighboring light sources. 5. The method of claim 4,
Wherein the elastic member is in contact with at least one of the neighboring light sources to emit heat. The method according to claim 1,
And a frame hole corresponding to the adjustment hole is formed in the frame. 8. The method of claim 7,
And a thread corresponding to the thread of the adjusting rod is formed in the frame hole. The method according to claim 1,
And a fixing bracket coupled to the other surface of the plurality of frames. 10. The method of claim 9,
Wherein the fixing bracket is fastened to an adjustment bracket disposed in a neighboring frame. 10. The method of claim 9,
Wherein the adjustment bracket and the fixing bracket are disposed on both sides disposed on the opposite sides of the frame, respectively. 10. The method of claim 9,
Wherein the adjustment bracket is one of a plurality of adjustment brackets disposed on either side of the frame and the fixing bracket is one of a plurality of fixing brackets disposed on the other side of the frame. The method according to claim 1,
Wherein the plurality of light sources respectively include:
A plurality of semiconductor light emitting elements;
A supporting substrate to which the plurality of semiconductor light emitting devices are coupled; And
And a conversion layer for converting the color of light generated in at least a part of the plurality of semiconductor light emitting elements so that the plurality of semiconductor light emitting elements form red subpixels, green subpixels and blue subpixels. Device. 14. The method of claim 13,
Wherein the semiconductor light emitting device corresponding to at least one of the red subpixel and the green subpixel has a light emitting area different from that of the semiconductor light emitting device corresponding to the blue subpixel. 15. The method of claim 14,
Wherein the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device are formed in different sizes and are disposed in the red subpixel, the green subpixel, and the blue subpixel, respectively.

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