KR20180109270A - Semiconductor device - Google Patents

Abstract

An embodiment provides a semiconductor device capable of improving reliability under the high voltage condition, in which the semiconductor device includes: a light-emitting structure including a plurality of first light-emitting units arranged on one side thereof, and a plurality of second light-emitting units arranged on the other side thereof; a plurality of first connection electrodes for electrically connecting the plurality of first light-emitting units; a plurality of second connection electrodes for electrically connecting the plurality of second light-emitting units; a first pad placed on the plurality of first light-emitting units; and a second pad placed on the plurality of second light-emitting units. The first connection electrode includes first-secondary connection electrodes extending to neighboring first light-emitting units and the second connection electrode includes second-secondary connection electrodes extending to a neighboring second light-emitting units. The light-emitting structure includes a first spacing region arranged in a first direction and partitioning the first light-emitting units and the second light-emitting units, and a first region extending in a second direction from the first spacing region. The first region is a minimum region including the first-secondary connection electrodes and the second-secondary connection electrodes, the second direction is a direction perpendicular to the first direction, and the ratio of the maximum width to the width of the first region in the second direction of the semiconductor device is 1:0.25 to 1:0.5.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

Embodiments relate to semiconductor devices.

Semiconductor devices including compounds such as GaN and AlGaN are widely used as light emitting devices, light receiving devices and various diodes because they have many advantages such as wide and easy bandgap energy.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, , Safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diodes (LEDs), automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

In recent years, research on a semiconductor device capable of dividing a light emitting structure into a plurality of light emitting elements and driving the same with high power has been under way.

The embodiment can provide a semiconductor device with improved reliability at a high voltage.

Further, a semiconductor device with improved current dispersion efficiency can be provided.

Further, it is possible to provide a semiconductor device in which the current density of each light emitting region is uniform.

A semiconductor device according to an embodiment of the present invention includes: a light emitting structure including a plurality of first light emitting portions disposed on one side and a plurality of second light emitting portions disposed on the other side; A plurality of first connection electrodes electrically connecting the plurality of first light emitting units; A plurality of second connection electrodes electrically connecting the plurality of second light emitting units; A first pad disposed on the plurality of first light emitting portions; And a second pad disposed on the plurality of second light emitting units, wherein the first connection electrode includes a first and second connection electrodes extending to neighboring first light emitting units, And the second light emitting structure includes a first light emitting portion and a second light emitting portion, the first light emitting portion and the second light emitting portion being arranged in a first direction to define the first light emitting portion and the second light emitting portion, Wherein the first region is a minimum region including the first and second connection electrodes and the second connection electrode and the second direction is a second region extending in the first direction And a ratio of a maximum width of the semiconductor element in the second direction to a width of the first region in the second direction is in a range of 1: 0.25 to 1: 0.5.

The direction in which the current flows in the plurality of first connection electrodes and the direction in which the current flows in the plurality of second connection electrodes may be opposite to each other.

And a third connection electrode electrically connecting any one of the plurality of first light emitting units and the plurality of second light emitting units, wherein the plurality of first connection electrodes, the third connection electrode, And the current flowing sequentially through the second -2 connection electrode may have a U-shape.

Wherein the plurality of first light emitting portions are spaced apart from each other in the first direction, the plurality of second light emitting portions are spaced apart in the first direction, and the plurality of first light emitting portions and the plurality of second light emitting portions are arranged in the second direction Can be spaced apart.

The first pad includes a 1-1 pad extending in the first direction and disposed on the plurality of first light emitting portions and a 1-2 pad extending toward the second pad, A second -1 pad extending in the plurality of first directions and disposed on the second light emitting portion, and a second 2-2 pad extending toward the first pad.

The first connection electrode may include a 1-1 connection electrode disposed on the first light emitting unit, and the second connection electrode may include a 2-1 connection electrode disposed on the second light emitting unit.

Wherein the first 1-1 connection electrode includes a second region disposed between the plurality of first 1-2 pads, the area ratio of the sum of the second regions and the first pad being 1: 0.2 to 1: 0.4 have.

The first pad includes a plurality of first sub-pads respectively disposed on the plurality of first light emitting units, and the second pad includes a plurality of second sub-pads disposed on the plurality of second light- . ≪ / RTI >

The area ratio of the first light emitting portion and the first sub pad may be 1: 0.2 to 1: 0.4.

And an intermediate layer disposed between the plurality of first and second light emitting portions, wherein the thickness of the intermediate layer corresponds to the protruding height of the first and second light emitting portions, and the first and second connection electrodes and the second- An electrode may be disposed on the intermediate layer.

The light emitting structure may include a pair of side surfaces parallel to the second direction, and a first imaginary line extending from an intermediate point of the pair of side surfaces may intersect with the first light emitting portion.

The area of the first pad may be larger than the area of the second pad.

The first directional width of the second-2 pad is greater than the first directional width of the second-second pad, and the second directional width of the second-second pad is greater than the second directional width of the second- .

The number of the plurality of first light emitting units may be greater than the number of the plurality of second light emitting units.

The ratio of the area of the first light emitting portion to the area of the second light emitting portion may be 1: 0.8 to 1: 1.2.

And a fourth connection electrode electrically connecting the second pad and the second light emitting unit.

According to the embodiment, breakage of the semiconductor element due to high voltage can be prevented.

In addition, since the overlapping of the connection electrode and the pad is avoided, breakdown of the insulation layer due to thermal stress can be suppressed, and the problem that the insulation layer is broken and some cells are not lighted can be solved .

Further, the current density of each luminescent region can be made uniform.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a plan view of a semiconductor device according to an embodiment of the present invention,
Fig. 2 is a sectional view in the AA direction in Fig. 1,
3 is a cross-sectional view taken along line BB in Fig. 1,
Fig. 4 is a sectional view in the CC direction of Fig. 1,
5 is a view showing a current flow of a semiconductor device according to an embodiment of the present invention,
6 is a view for explaining the arrangement relationship between the pad and the connection electrode,
7 is a view for explaining a reflective layer of a semiconductor device,
8 is a view for explaining an intermediate layer disposed between the first and second light emitting portions,
Fig. 9 is a modification of Fig. 1,
10 is a plan view of a semiconductor device according to another embodiment of the present invention,
11 is a plan view of a semiconductor device according to another embodiment of the present invention,
12 is a plan view of a semiconductor device according to another embodiment of the present invention.

The embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below.

Although not described in the context of another embodiment, unless otherwise described or contradicted by the description in another embodiment, the description in relation to another embodiment may be understood.

For example, if the features of configuration A are described in a particular embodiment, and the features of configuration B are described in another embodiment, even if the embodiment in which configuration A and configuration B are combined is not explicitly described, It is to be understood that they fall within the scope of the present invention.

In the description of the embodiments, in the case where one element is described as being formed "on or under" another element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention.

FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along a line A-A in FIG. 1, FIG. 3 is a cross-sectional view taken along a line B-B in FIG. 1, and FIG.

1, a semiconductor device according to an embodiment includes a light emitting structure including a plurality of first light emitting units 120-1 and a second light emitting unit 120-2, a plurality of first light emitting units 120-1 A plurality of second connection electrodes 170 for electrically connecting the plurality of second light emitting units 120-2, a plurality of first light emitting units 120 -1), and a second pad 192 disposed on the plurality of second light emitting units 120-2.

The light emitting structures 120-1 and 120-2 may include a plurality of first light emitting portions 120-1 disposed on one side and a plurality of second light emitting portions 120-2 disposed on the other side. have. The plurality of first light emitting units 120-1 and the plurality of second light emitting units 120-2 may be light emitting cells isolated by etching. The light emitting portion can be defined as a region having an active layer independently.

The first light emitting portion 120-1 and the second light emitting portion 120-2 may be spaced apart from each other in the second direction (Y axis direction) with respect to the first spacing distance d1. The plurality of first light emitting units 120-1 and the second light emitting units 120-2 may be spaced apart from each other in the first direction (X axis direction). Hereinafter, the first direction (X-axis direction) is defined as a horizontal direction, and the second direction (Y-axis direction) is defined as a vertical direction, but the present invention is not limited thereto.

The number of the first light emitting units 120-1 may be greater than the number of the second light emitting units 120-2. The sum of the first light emitting portion 120-1 and the second light emitting portion 120-2 may be an odd number. Illustratively, the number of the first light emitting units 120-1 is four, the number of the second light emitting units 120-2 is three, and the number of the total light emitting units is seven, but the present invention is not limited thereto.

The first connection electrode 150 may electrically connect the neighboring first light emitting unit 120-1. The first connection electrode 150 may connect the plurality of first light emitting units 120-1 in series.

The first connection electrode 150 may include a 1-1 connection electrode 151 disposed on one of the first light emitting units 120-1 and a second connection electrode 151 extending to the adjacent first light emitting unit 120-1. 1-2 connecting electrodes 152. [0031] The first and second connection electrodes 152 may be disposed on the second spacing distance d2. The 1-1 connection electrode 151 may be arranged to overlap the plurality of second holes H2 and the 1-2 connection electrode 152 may overlap the third hole H3.

The second connection electrode 170 may electrically connect the plurality of second light emitting units 120-2. The second connection electrode 170 may connect the plurality of second light emitting units 120-2 in series. The second connection electrode 170 may include a second-1 connection electrode 171 disposed on one of the second light emitting units 120-2 and a second connection electrode 173 extending to the adjacent second light emitting unit 120-2. 2-2 connecting electrodes 172, And the 2 < 2 > connecting electrode 172 may be disposed on the third spacing d3. The second-1 connecting electrode 171 may be disposed so as to overlap the plurality of fifth holes H5, and the second-second connecting electrode 172 may be disposed to overlap the sixth hole H6.

The third connection electrode 160 may electrically connect any one of the plurality of first light emitting units 120-1 and the plurality of second light emitting units 120-2. The third connection electrode 160 may be disposed on the first spacing distance d1 to electrically connect the first light emitting unit 120-1 and the second light emitting unit 120-2.

The fourth connection electrode 180 may be disposed on the last second light emitting portion 120-2 and may be electrically connected to the second pad 192. [ That is, the fourth connection electrode 180 may not be an electrode electrically connecting the light emitting unit, but may be a dummy electrode connecting the light emitting unit and the pad.

The first pad 191 includes a first 1-1 pad 191a extending in the horizontal direction and disposed on the plurality of first light emitting portions 120-1 and a first pad 191a extending from the 1-1 second pad 191a to the second pad 191a. And a plurality of first 1-2 pads 191b extending toward the second pads 192. The 1-1 connection electrode 151 may be disposed between the adjacent first 1-2 pads 191b on a plane.

The second pad 192 may include a 2-1 pad 192a extending in the horizontal direction and disposed on the plurality of second light emitting portions 120-2 and a 2-1 pad 192a extending from the 2-1 pad 192a to the 1st pad And a plurality of second-2 pads 192b extending toward the second pads 191. The second-1 connecting electrode 171 may be disposed between the adjacent second-2 pads 192b on the plane.

The first pad 191 does not overlap the first connection electrode 150 in the thickness direction (Z-axis direction) of the light emitting structure and the second pad 192 does not overlap the second connection electrode 170 so as not to overlap with each other.

When the first pad 191 and the first connection electrode 150 are overlapped, if a crack is generated in the insulating layer disposed therebetween, a current to be injected into the corresponding light emitting portion leaks, so that the light emitting portion may not emit light. However, according to the embodiment, even if a crack occurs in the insulating layer, the first pad 191 and the first connection electrode 150 are not overlapped with each other, so that current leakage can be improved.

Referring to FIG. 2, the first conductive semiconductor layer 121 may be formed of a compound semiconductor such as -V or-VI, and the first dopant may be doped. The first conductive semiconductor layer 121 may be a semiconductor material having a composition formula of In _{x 1} Al _{y 1} Ga _{1 -x 1 -y1} N (0 _{? X1? 1} , 0 _{? Y1? 1} , 0? X1 + y1? For example, GaN, AlGaN, InGaN, InAlGaN, and the like. The first dopant may be an n-type dopant such as Si, Ge, Sn, Se, or Te. When the first dopant is an n-type dopant, the first conductivity type semiconductor layer 121 doped with the first dopant may be an n-type semiconductor layer.

The active layer 122 may be disposed between the first conductive semiconductor layer 121 and the second conductive semiconductor layer 123. The active layer 122 is a layer in which electrons (or holes) injected through the first conductive type semiconductor layer 121 and holes (or electrons) injected through the second conductive type semiconductor layer 123 meet. The active layer 122 transitions to a low energy level as electrons and holes recombine, and can generate light having ultraviolet wavelengths.

The active layer 122 may include a well layer and a barrier layer and may have any one of a single well structure, a multiple well structure, a single quantum well structure, a multi quantum well (MQW) structure, a quantum dot structure, And the structure of the active layer 122 is not limited thereto.

The second conductivity type semiconductor layer 123 may be formed on the active layer 122 and may be formed of a compound semiconductor such as -V or -V group. A second dopant may be added to the second conductivity type semiconductor layer 123 Lt; / RTI > A second conductive semiconductor layer 123 is a semiconductor material having a compositional formula of _{In x5 Al y2 Ga 1 -x5- y2} N (0≤x5≤1, 0≤y2≤1, 0≤x5 + y2≤1) or AlInN , AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second dopant is a p-type dopant such as Mg, Zn, Ca, Sr, or Ba, the second conductivity type semiconductor layer 123 doped with the second dopant may be a p-type semiconductor layer.

The second electrode 130 disposed on the second conductivity type semiconductor layer 123 may be an ohmic electrode and / or a reflective electrode. The second electrode 130 may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide ZnO, ZnO, IrOx, ZnO, AlGaO, AZO, ATO, GZO, IZO, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, , Au, and Hf, but is not limited to these materials.

The first insulating layer 141 may be disposed between the light emitting structures 120-1 and 120-2 and the first connecting electrode 150. [ The second insulating layer 142 may be disposed between the first connection electrode 150 and the first pad 191. The first insulating layer 141 and second insulating layer 142 is at least one selected from the group consisting of _{SiO 2, SixOy, Si 3 N} 4, SixNy, SiOxNy, Al 2 O 3, TiO 2, AlN , etc. formed But is not limited to this.

The first insulating layer 141 and the second insulating layer 142 may be formed as a single layer or a multilayer. Illustratively, the first insulating layer 141 and the second insulating layer 142 may be a DBR (distributed Bragg reflector) having a multi-layered structure including Ag, Si oxide, and Ti compound. However, the first insulating layer 141 may include various reflective structures without being limited thereto.

When the first insulating layer 141 performs a reflection function, light emitted from the active layer 122 may be reflected to improve light extraction efficiency. However, the present invention is not limited thereto, and a separate reflective layer may be further provided.

The first pad 191 may be in contact with the second electrode 130 through a first hole H1 formed in the second insulating layer 142. [ Accordingly, the first pad 191 may be electrically connected to the second conductive semiconductor layer 123 of the first light emitting portion 120-1.

A separate dummy electrode 153 may be disposed between the first pad 191 and the second electrode 130. The dummy electrode 153 can prevent the solder disposed on the first pad 191 from diffusing into the first light emitting portion 120-1. However, the present invention is not limited thereto, and the dummy electrode 153 may be omitted. The dummy electrode may be formed at the same time when the first connection electrode 150 is formed.

The first connection electrode 150 may be electrically connected to the first conductivity type semiconductor layer 121 through the second hole H2. Therefore, the current injected through the first pad 191 may flow to the first connection electrode 150 through the first light emitting portion 120-1.

The first connection electrode 150 may extend to the neighboring first light emitting portion 120-1 by extending to the second spacing portion d2. The second spacing distance d2 may be a period in which the plurality of first light emitting units 120-1 are isolated. The first connection electrode 150 extending to the neighboring first light emitting portion 120-1 is connected to the second electrode 130 of the neighboring first light emitting portion 120-1 through the third hole H3, 2 conductivity type semiconductor layer 123 may be connected. Accordingly, the first connection electrode 150 can connect the neighboring first light emitting units 120-1 in series.

Referring to FIGS. 1 and 3, the third connection electrode 160 electrically connects any one of the plurality of first light emitting units 120-1 and the plurality of second light emitting units 120-2 . The third connection electrode 160 may be disposed on the first separation section d1. More specifically, the third connection electrode 160 is electrically connected to the first conductivity type semiconductor layer 121 of the first light emitting portion 120-1 through the second hole H2, and the fourth hole H4 Type semiconductor layer 123 of the second light emitting portion 120-2.

Referring to FIGS. 1 and 4, the second connection electrode 170 includes a second light emitting portion 120-2 that extends to the neighboring second light emitting portion 120-2 and is adjacent to the sixth hole H6, As shown in FIG. The second connection electrode 170 may connect the second light emitting unit 120-2 adjacent in series through the fifth hole H5 and the sixth hole H6.

And the fourth connection electrode 180 may be disposed on the last second light emitting unit 120-2. The fourth connection electrode 180 may be electrically connected to the second light emitting portion 120-2 through the fifth hole H5 and may be electrically connected to the second pad 192 through the seventh hole H7. have. Accordingly, when a current is injected through the first pad 191 and the second pad 192, the current can flow in one direction. The direction of current (or charge) movement may be determined according to the polarity of the power source applied to the first and second pads 191 and 192.

FIG. 5 is a view showing a current flow of a semiconductor device according to an embodiment of the present invention, and FIG. 6 is a view for explaining the arrangement relationship of a pad and a connection electrode.

As described above, the current injected through the first pad 191 is injected into the first light emitting unit 120-1, and then the first light emitting unit 120-1, which is adjacent to the first connection electrode 150 by the first connection electrode 150, Lt; / RTI > Then, the current injected into the second light emitting portion 120-2 by the third connection electrode 160 flows continuously to the neighboring second light emitting portion 120-2 by the second connection electrode 170 .

As described above, after a current is injected and dispersed into the light emitting portion by the connection electrode, a current can flow to the neighboring connection electrode again. Current flows in the first and second light emitting units 120-1 and 120-2 are indicated by dashed arrows and current flows in the first to third connecting electrodes 150, 160 and 170 are indicated by solid arrows.

At this time, the direction N1 in which the current flows in the plurality of first connection electrodes 152 and the direction N2 in which the current flows in the plurality of second connection electrodes 172 may be opposite to each other. The direction N1 in which the current flows in the first and second connection electrodes 152 may flow in the left-to-right direction (X1 direction) with reference to the drawing, The flowing direction N2 may be a right-to-left direction (X2 direction).

Since the first light emitting portion 120-1 and the second light emitting portion 120-2 are electrically connected by the third connection electrode 160, the first and second connection electrodes 152, 160, and the second-second connecting electrode 172 may have a U-shape (X1, Y2, and X2 directions). Therefore, the current direction sequentially flowing through the first, second, third, and second connection electrodes 152, 160, and 172 may have a U-shape.

The number of the first light emitting units 120-1 may be greater than the number of the second light emitting units 120-2. The ratio of the sum of the area of the first light emitting portion 120-1 and the area of the second light emitting portion 120-2 may be 1: 0.8 to 1: 1.2. That is, the areas of the first light emitting portion 120-1 and the second light emitting portion 120-2 can be made similar. Therefore, the density of current injected into each light emitting portion becomes similar, and uniform light emission can be made possible.

The first spacing distance d1 may not coincide with the first imaginary line C1 extending in the horizontal direction and bisecting the semiconductor element. The first spacing d1 may be disposed lower than the first imaginary line C1. The first virtual line C1 and the second virtual line C2 may not coincide with each other. The second imaginary line C2 may be a hypothetical straight line bisecting the first spacing d1 in the horizontal direction. Therefore, the first virtual line C1 can be disposed on the first light emitting portion 120-1.

If the first virtual line C1 and the second virtual line C2 coincide with each other, the areas of the upper area and the lower area become almost equal. In this case, the area of the first light emitting portion 120-1, which divides the upper region into four equal parts, may be smaller than the area of the second light emitting portion 120-2 that divides the lower region into three equal parts. Accordingly, the current density between the first light emitting portion 120-1 and the second light emitting portion 120-2 is different, and uniform light emission may be difficult.

The 1-2 connecting electrode 152 and the 2-2 connecting electrode 172 may be disposed in the first region d19 that is wider than the first spacing d1. The first region d19 may extend in the vertical direction at the first spacing d1 and may be a minimum region including the first and second connection electrodes 152 and 172. [ The upper line of the first region d19 may correspond to the upper end of the first connecting electrode 152 and the lower line of the first region d19 may correspond to the upper end of the second connecting electrode 172 It can coincide with the lower end.

The first region d19 includes a third hole H3 for connecting the first and second connection electrodes 152 and 120-1 to the second conductivity type semiconductor layer, A sixth hole H6 for connecting the electrode 172 and the second conductivity type semiconductor layer of the second light emitting portion 120-2 may be disposed.

The ratio (d9: d19) of the width d9 of the semiconductor device in the vertical direction to the width of the first region d19 may be 1: 0.25 to 1: 0.5. (For example, 1: 0.2), the widths of the first-second connecting electrode 152 and the second-second connecting electrode 172 are narrowed, so that the current is concentrated and the electrode is broken have. When the width ratio is larger than 1: 0.5, the widths of the first and second connection electrodes 152 and 172 are increased. Therefore, the widths of the first and second pads 191 and 192 are relatively increased, Can be reduced. Therefore, reliability in soldering may be deteriorated.

Referring to FIG. 6, the area of the first pad 191 may be larger than the area of the second pad 192. The ratio of the total area of the first pad 191 to the total area of the second pad 192 may be 1: 0.6 to 1: 0.9. If the area ratio is less than 1: 0.6, the area of the second pad 192 becomes excessively small and the reliability of soldering to the second pad 192 may deteriorate. In addition, when the area ratio is larger than 1: 0.9, the width of the second-second connecting electrode 172 may be narrowed. In order to increase the area of the second pad 192, the width of the second-second connection electrode 172 may be relatively small because the second pad 192 must be enlarged in the vertical direction. Therefore, when the high voltage is applied, the second -2 connection electrode 172 may be broken.

The vertical width d23 of the 1-2 pad 191b may be thicker than the vertical width d22 of the 1-1 pad 191a. The horizontal width d20 of the 1-2 pad 192b disposed between the 1-1 connection electrodes 151 may be thicker than the vertical width d22 of the 1-1-1 pad 191a have.

The vertical width d24 of the second-2 pad 192b may be thicker than the vertical width d25 of the second-1 pad 192a. The horizontal width d21 of the second-second pad 192b disposed between the second-first connecting electrodes 171 may be thicker than the vertical width d25 of the second-1 pad 192a have.

The horizontal width d21 of the 2-2 pad 192b may be larger than the horizontal width d20 of the 1-2th pad 191b. Illustratively, the ratio (d20: d21) of the horizontal width d20 of the first 1-2 pad 191b to the horizontal width d21 of the second -2 pad 192b is 1: 1.2 to 1: 1.7 . Width ratio is less than 1: 1.2 (e.g., 1: 1), the area of the second pad 192 becomes small, and soldering may become difficult. In addition, when the width ratio is larger than 1: 1.7, the width of the 1-1 pad 191a increases, so that the width of the 1-1 connection electrode 151 may decrease. Therefore, the electrode may be broken at the time of current concentration. The vertical width d23 of the 1-2 pad 191b may be larger than the vertical width d24 of the 2-2 pad 192b.

The ratio d13: d15 of the vertical width d13 of the first light emitting portion 120-1 to the vertical width d15 of the first-second connecting electrode 152 may be 1: 0.15 to 1: 0.35 have. Width is less than 1: 0.15, the width of the first-second connecting electrode 152 becomes small, so that current can be concentrated and broken. In addition, when the width ratio is larger than 1: 0.35, the area of the first pad 191 becomes relatively small, and reliability in soldering may be lowered. For the same reason, the ratio of the vertical width d14 of the first pad 191 to the vertical width d15 of the first-second connecting electrode 152 can satisfy 1: 0.25 to 1: 0.4.

The ratio of the vertical width d16 of the second light emitting portion 120-2 to the vertical width d17 of the second-second connecting electrode 172 may be 1: 0.1 to 1: 0.3. Width is less than 1: 0.1, the width of the second-second connecting electrode 172 becomes small, so that the current may be concentrated and broken. In addition, when the ratio of the width is larger than 1: 0.3, the area of the second pad 192 becomes small, and reliability in soldering may be reduced. For the same reason, the ratio of the vertical width d18 of the second pad 192 to the vertical width d17 of the second-second connecting electrode 172 can satisfy 1: 0.2 to 1: 0.35.

The ratio (d15: d17) of the width d15 in the vertical direction of the 1-2 connecting electrode 152 to the width d17 in the vertical direction of the 2-2 connecting electrode 172 may be 1: 0.4 to 1: 0.7 have. Width ratio is smaller than 1: 0.4, the width of the second-second connecting electrode 172 becomes small, and current can be concentrated on the current. In addition, when the ratio of the width is larger than 1: 0.7, the width of the second-second connecting electrode 172 becomes larger, and the area of the second pad 192 relatively decreases. Therefore, reliability in soldering to the second pad 192 may be reduced.

The ratio d6: d12 of the horizontal widths of the first light emitting portion 120-1 and the second light emitting portion 120-2 may be 1: 1.1 to 1: 1.5. The ratio d13: d16 of the widths of the first light emitting portion 120-1 and the second light emitting portion 120-2 in the vertical direction may be 1: 0.6 to 1: 0.9. That is, the width of the first light emitting portion 120-1 may be larger in the horizontal direction and the width of the second light emitting portion 120-2 may be larger in the vertical direction. Accordingly, the areas of the first light emitting portion 120-1 and the second light emitting portion 120-2 can be made substantially similar.

The 1-1 connection electrode 151 may include a second region S31 disposed between the plurality of first 1-2 pads 191b. The second region S31 may have an area overlapping the first connection electrode 150 when the first pad 191 is formed in a rectangular shape.

The sum of the second regions S31 and the area ratio of the first pads 191 may be 1: 0.2 to 1: 0.4. If the area ratio is less than 1: 0.2, the area of the 1-1 connection electrode 151 becomes small, and the electrode may be damaged by current concentration. In addition, if the area ratio is larger than 1: 0.4, the area of the first pad 191 becomes small, and reliability in soldering may be lowered.

The 1-2 connecting electrode 171 may include a third region S32 disposed between the plurality of second -2 pads 192b. At this time, the sum of the third regions S32 and the area ratio of the second pads 192 may satisfy 1: 0.2 to 1: 0.4 for the same reason as described above.

Fig. 7 is a view for explaining a reflective layer of a semiconductor element, Fig. 8 is a view for explaining an intermediate layer disposed between the first and second light emitting portions, and Fig. 9 is a modification of Fig.

Referring to FIG. 7, a reflective layer 143 may be further disposed on the first insulating layer 141. The reflective layer 143 may be a DBR (distributed Bragg reflector) having a multi-layer structure including Ag, Si oxide, and Ti compound. However, the reflective layer may include various reflective structures without being limited thereto. Illustratively, the reflective layer 143 may be formed by repeatedly laminating a high refractive index layer and a low refractive index layer. The reflective layer 143 may improve light extraction efficiency by reflecting light emitted from the active layer 122.

Referring to FIG. 8, an intermediate layer 144 may be disposed between the plurality of first and second light emitting units 120-1 and 120-2. The intermediate layer 144 may have a thickness equal to the protruding height of the first and second light emitting portions 120-1 and 120-2 or the first insulating layer 141. [ Illustratively, intermediate layer 144 may be a planarization layer.

The first to third connection electrodes 150, 160, and 170 may be disposed on the first spacing d1, the second spacing d2, and the third spacing d3, respectively. In FIG. 8, the second connection electrode 160 is arranged on the second separation section d2.

Since the first and second light emitting units 120-1 and 120-2 are protruded, it may be difficult to form the first to third connection electrodes 150, 160 and 170 in a uniform thickness on the first and second light emitting units 120-1 and 120-2. However, according to the embodiment, since the first to third connection electrodes 150, 160, and 170 are disposed on the intermediate layer 144, it is easy to manufacture and uniform thickness can be formed. Therefore, low current characteristics and reliability can be improved.

The material of the intermediate layer 144 is not particularly limited. The intermediate layer 144 may include the same material as the first insulating layer 141. Illustratively, the intermediate layer 144 may include, but is not limited to, any one of SiO ₂ , Si ₃ N ₄ , Resin, Spin on Glass (SOG), or Spin on Dielectric (SOD).

Referring to FIG. 9, the first pad 191 may include a first sub pad 191c disposed on the plurality of first light emitting units 120-1. The first sub-pads 191c may be spaced apart from each other. The second pad 192 may include a second subpad 192c disposed on the second light emitting portion 120-2. With this configuration, the degree of freedom of the pad design can be improved.

The area ratio of the first light emitting part 120-1 and the first sub pad 191c may be 1: 0.2 to 1: 0.4. When the area ratio is less than 1: 0.2, the area of the first sub pad 191c becomes smaller, thereby reducing the reliability in soldering. If the area ratio is larger than 1: 0.4, 150 can be reduced. Therefore, the connection electrode may be broken when a high voltage is applied. The area ratio of the second light emitting portion 120-2 and the second sub pad 192c may also satisfy 1: 0.2 to 1: 0.4 for the same reason.

10 is a plan view of a semiconductor device according to another embodiment of the present invention.

10, the semiconductor device according to the embodiment includes a plurality of first light emitting units 120-1 disposed on one side and a plurality of second light emitting units 120-2 disposed on the other side .

The number of the first light emitting unit 120-1 and the number of the second light emitting unit 120-2 may be the same. The total number of the first light emitting portion 120-1 and the second light emitting portion 120-2 may be an even number. For example, the number of the first light emitting unit 120-1 and the number of the second light emitting unit 120-2 are four, but the present invention is not limited thereto.

A first spacing distance d1 may be disposed between the first light emitting unit 120-1 and the second light emitting unit 120-2. The first light emitting portion 120-1 and the second light emitting portion 120-2 may be spaced apart from each other in the vertical direction based on the first spacing d1. Illustratively, a plurality of first light emitting units 120-1 may be disposed at the upper portion and a second light emitting unit 120-2 may be disposed at the upper portion. According to the embodiment, since the first light emitting portion 120-1 and the second light emitting portion 120-2 have the same number, the first spacing d1 can coincide with the imaginary line bisecting the semiconductor element. That is, the area of the upper area and the area of the lower area may be the same based on the first separation interval d1.

Accordingly, the areas of the first pad 191 and the second pad 192 may be the same, and the shapes of the first connection electrode 150 and the second connection electrode 170 may be substantially the same.

FIG. 11 is a plan view of a semiconductor device according to another embodiment of the present invention, and FIG. 12 is a plan view of a semiconductor device according to another embodiment of the present invention.

11, the specific configuration of the first light emitting portion 120-1, the second light emitting portion 120-2, the first connection electrode 150, and the second connection electrode 170 is the same as that of FIG. The bar can be applied as is. The first pad 191 may overlap the first connection electrode 150 in the thickness direction and the second pad 192 may overlap the second connection electrode 170 in the thickness direction. According to this structure, the first pad 191 and the second pad 192 can be freely designed, and the area required for soldering can be secured.

The ratio of the area of the first pad 191 to the overlapping area S1 may be 1: 0.2 to 1: 0.4. The overlapping area S1 may be an area where the first pad 191 and the first connection electrode 150 overlap in the thickness direction. If the area ratio is less than 1: 0.2, the area of the first connection electrode 150 becomes small, and the electrode may be damaged by current concentration. Also, when the area ratio is larger than 0.4, the overlapping area is widened, and current may leak when the insulating layer breaks. For the same reason, the ratio of the area of the second pad 192 to the overlap area S2 may be 1: 0.2 to 1: 0.4. The overlapping area S2 may be a total area in which the second pad 192 and the second and fourth connection electrodes 170 and 180 are overlapped in the thickness direction.

The number of the first light emitting units 120-1 may be greater than the number of the second light emitting units 120-2. The ratio of the sum of the area of each first light emitting portion 120-1 to the sum of the area of each second light emitting portion 120-2 may be 1: 0.8 to 1: 1.2. That is, the areas of the first light emitting portion 120-1 and the second light emitting portion 120-2 can be made similar. Therefore, the density of current injected into each light emitting portion becomes similar, and uniform light emission can be made possible.

The first spacing distance d1 may not coincide with the first imaginary line C1 extending in the horizontal direction and bisecting the semiconductor element. The first spacing d1 may be disposed lower than the first imaginary line C1. Therefore, the first virtual line C1 and the second virtual line C2 may not coincide with each other. The second imaginary line C2 may be a hypothetical straight line bisecting the first spacing d1 in the horizontal direction.

If the first virtual line C1 and the second virtual line C2 are overlapped, the areas of the upper area and the lower area become almost the same. Therefore, the area of the first light emitting unit 120-1 divided into four equal parts can be smaller than the area of the second light emitting unit 120-2 divided into three equal parts of the lower area. Accordingly, the current density between the first light emitting portion 120-1 and the second light emitting portion 120-2 is different, and uniform light emission may be difficult.

The 1-2 connecting electrode 152 and the 2-2 connecting electrode 172 may be disposed in the first region d19 that is wider than the first spacing d1. At this time, the third imaginary line extending in the horizontal direction and bisecting the first region d19 may coincide with the second imaginary line C2 bisecting the first distance d1.

The ratio (d9: d19) of the width of the semiconductor device to the width of the first region d19 may be 1: 0.25 to 1: 0.5. (For example, 1: 0.2), the current may be concentrated and the electrode may be damaged because the first and second connecting electrodes 152 and 172 are narrowed. When the width ratio is larger than 1: 0.5, the widths of the first and second connection electrodes 152 and 172 are increased. Therefore, the widths of the first and second pads 191 and 192 are relatively increased, Can be reduced. Therefore, reliability in soldering may be deteriorated.

Referring to FIG. 12, the first light emitting unit 120-1 and the second light emitting unit 120-2 may have the same number. The total number of the first light emitting portion 120-1 and the second light emitting portion 120-2 may be an even number. Illustratively, the number of the first light emitting unit 120-1 and the number of the second light emitting unit 120-2 are four, respectively.

A first spacing distance d1 may be disposed between the first light emitting unit 120-1 and the second light emitting unit 120-2. The first light emitting portion 120-1 and the second light emitting portion 120-2 may be spaced apart from each other in the vertical direction based on the first spacing d1. Illustratively, a plurality of first light emitting units 120-1 may be disposed on the upper portion and a second light emitting unit 120-2 may be disposed on the upper portion. According to the embodiment, since the first light emitting portion 120-1 and the second light emitting portion 120-2 are the same in number, the first spacing d1 may correspond to a virtual line bisecting the semiconductor element in the vertical direction have. That is, the area of the upper area and the area of the lower area may be the same based on the first separation interval d1.

Accordingly, the areas of the first pad 191 and the second pad 192 may be the same, and the shapes of the first connection electrode 150 and the second connection electrode 170 may be substantially the same.

The semiconductor device may be used as a light source of an illumination system, or as a light source of an image display device or a lighting device. That is, semiconductor devices can be applied to various electronic devices arranged in a case to provide light. Illustratively, when a semiconductor device and an RGB phosphor are mixed and used, white light with excellent color rendering (CRI) can be realized.

The above-described semiconductor device is composed of a light emitting device package and can be used as a light source of an illumination system, for example, as a light source of a video display device or a lighting device.

When used as a backlight unit of a video display device, it can be used as an edge type backlight unit or as a direct-type backlight unit. When used as a light source of a lighting device, it can be used as a regulator or a bulb type. It is possible.

The light emitting element includes a laser diode in addition to the light emitting diode described above.

The laser diode may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure, like the light emitting element. Then, electro-luminescence (electroluminescence) phenomenon in which light is emitted when an electric current is applied after bonding the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor is used, And phase. That is, the laser diode can emit light having one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. It can be used for optical communication, medical equipment and semiconductor processing equipment.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts the intensity of the light into an electric signal, is exemplified. As such a photodetector, a photodiode (e.g., a PD with a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodiode (e.g., a photodiode such as a photodiode (silicon, selenium), a photoconductive element (cadmium sulfide, cadmium selenide) , Photomultiplier tube, phototube (vacuum, gas-filled), IR (Infra-Red) detector, and the like.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have.

The photodiode, like the light emitting device, may include the first conductivity type semiconductor layer having the structure described above, the active layer, and the second conductivity type semiconductor layer, and may have a pn junction or a pin structure. The photodiode operates by applying reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be approximately proportional to the intensity of the light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode that can convert light into current. The solar cell, like the light emitting device, may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier of an electronic circuit through a rectifying characteristic of a general diode using a p-n junction, and can be applied to an oscillation circuit or the like by being applied to a microwave circuit.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor device such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, Or may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (17)

A light emitting structure including a plurality of first light emitting portions disposed on one side and a plurality of second light emitting portions disposed on the other side;
A plurality of first connection electrodes electrically connecting the plurality of first light emitting units;
A plurality of second connection electrodes electrically connecting the plurality of second light emitting units;
A first pad disposed on the plurality of first light emitting portions; And
And a second pad disposed on the plurality of second light emitting portions,
The first connection electrode includes a first and second connection electrodes extending to neighboring first light emitting portions,
The second connection electrode includes a second-second connection electrode extending to the neighboring second light emitting portion,
Wherein the light emitting structure includes a first spacing region arranged in a first direction and partitioning the first light emitting portion and the second light emitting portion, and a first region extending in a second direction in the first spacing region,
Wherein the first region is a minimum region including the first and second connection electrodes and the second connection electrode, the second direction is a direction perpendicular to the first direction,
Wherein the ratio of the maximum width of the semiconductor element in the second direction to the width of the first region in the second direction is 1: 0.25 to 1: 0.5.
The method according to claim 1,
Wherein a direction in which a current flows in the plurality of first connection electrodes and a direction in which current flows in the plurality of second connection electrodes are opposite to each other.
The method according to claim 1,
And a third connection electrode electrically connecting any one of the plurality of first light emitting units and the plurality of second light emitting units,
Wherein the plurality of first connection electrodes, the third connection electrodes, and the second connection electrodes are U-shaped.
The method according to claim 1,
Wherein the plurality of first light emitting portions are spaced apart from each other in a first direction,
Wherein the plurality of second light emitting units are spaced apart from each other in the first direction,
Wherein the plurality of first light emitting portions and the plurality of second light emitting portions are spaced apart in the second direction.
The method according to claim 1,
The first pad includes a first 1-1 pad extending in the first direction and disposed on the plurality of first light emitting portions, and a 1-2 < th > pad extending toward the second pad,
The second pad comprises a second-1 pad extending in the plurality of first directions and disposed on the second light emitting portion, and a second-2 pad extending toward the first pad.
6. The method of claim 5,
The first connection electrode includes a 1-1 connection electrode disposed on the first light emitting portion,
And the second connection electrode includes a second-1 connection electrode disposed on the second light emitting portion.
The method according to claim 6,
The first 1-1 connection electrode includes a second region disposed between the plurality of first 1-2 pads,
Wherein a sum of the second regions and an area ratio of the first pads is 1: 0.2 to 1: 0.4.
The method according to claim 1,
Wherein the first pad includes a plurality of first sub-pads respectively disposed on the plurality of first light emitting portions,
And the second pad includes a plurality of second sub-pads respectively disposed on the plurality of second light emitting portions.
9. The method of claim 8,
And the area ratio of the first light emitting portion and the first sub pad is 1: 0.2 to 1: 0.4.
The method according to claim 1,
And an intermediate layer disposed between the plurality of first and second light emitting portions,
The thickness of the intermediate layer corresponds to the protruding height of the first and second light emitting portions,
And the first and second connection electrodes are disposed on the intermediate layer.
The method according to claim 1,
Wherein the light emitting structure includes a pair of side surfaces parallel to the second direction,
And a first imaginary line extending from an intermediate point of the pair of side surfaces crosses the first light emitting portion.
The method according to claim 1,
Wherein an area of the first pad is larger than an area of the second pad.
6. The method of claim 5,
The first directional width of the second -2 pad is larger than the first directional width of the second < RTI ID = 0.0 >
And the second direction width of the second-second pad is larger than the second direction width of the second-second pad.
The method according to claim 1,
Wherein the number of the plurality of first light emitting portions is greater than the number of the second light emitting portions.
15. The method of claim 14,
Wherein a ratio of an area of the first light emitting portion to an area of the second light emitting portion is 1: 0.8 to 1: 1.2.
The method according to claim 1,
And a fourth connection electrode electrically connecting the second pad and the second light emitting unit.
A light emitting structure including a plurality of first light emitting portions disposed on one side and a plurality of second light emitting portions disposed on the other side;
A plurality of first connection electrodes electrically connecting the plurality of first light emitting units;
A plurality of second connection electrodes electrically connecting the plurality of second light emitting units;
A first pad disposed on the plurality of first light emitting portions; And
And a second pad disposed on the plurality of second light emitting portions,
Wherein the plurality of first connection electrodes include a 1-1 connection electrode disposed on the first light emitting portion and a 1-2 connection electrode extending to the neighboring first light emitting portion,
The plurality of second connection electrodes include a second-1 connection electrode disposed on the second light-emitting portion, and a second-second connection electrode extending to the adjacent second light-emitting portion,
Wherein a direction in which a current flows in the plurality of first connection electrodes and a direction in which current flows in the plurality of second connection electrodes are opposite to each other.

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