KR20180108935A - Method for forming fine wiring - Google Patents

Abstract

Disclosed is a method for forming a fine line using laser chemical vapor deposition (LCVD) or electrohydrodynamic (EHD) ink jet technology. The method for forming a fine line includes a step of forming a line on a substrate by using an alloy material, and a step of performing heat treatment on the line using a laser. The alloy material comprises 50 wt% of tungsten and 50 wt% of molybdenum. In the heat treatment step according to the embodiment, heat is selectively applied to a depth of 1 μm from the surface of the line in a temperature atmosphere of 500 to 650°C, and then it is cooled. It is possible to improve the texture density of the fine line.

Description

[0001] METHOD FOR FORMING FINE WIRING [0002]

Embodiments of the present invention relate to a method of forming a fine wiring, and more particularly, to a method of forming a fine wiring by a laser chemical vapor deposition (LCVD) method, an electrohydrodynamic (EHD) ink jet technique, To a method for forming the same.

Conventional inkjet printing process technology has attracted attention as a technology capable of forming a 10 μm-sized microelectrode pattern without damaging the substrate by a non-contact type process method and reducing the waste of materials by a direct patterning method. However, since the inkjet printing process technique uses a piezoelectric head, aerosol, and thermal jet printing head structure, there is a limitation in applying a high viscosity material.

In order to form a high-resolution fine electrode, a material having a high metal particle content should be applied. However, since the solution viscosity increases with an increase in the content of the conductive material, there is a problem that the conventional ink-jet printing process technique frequently causes malfunctions in ejection of a high viscosity and high-content material. Various high-performance microelectrode patterning head technologies such as electro-hydro-dynamics (EHD) patterning heads, laser induced transfer heads, and the like have been proposed to solve the discharge problem of highly viscous materials having high conductivity and high content.

High-performance patterning technology based on electrohydrodynamics can simplify complicated processes such as etching, development, and deposition required in semiconductor processing, and can provide high-viscosity inks containing conductive metal particles, organic materials, and carbon nanotubes It is necessary to use droplets of micrometer (mu m) size to form a desired fine pattern on the substrate. To this end, the electrohydrodynamic fine linewidth patterning technique moves the fluid in the direction of the electric force through the interaction of the electric field with the induced charge in the fluid and atomizes or discharges it into the fine droplet through the nozzle orifice.

The high-performance patterning head using the discharge phenomenon of the fluid by the electrohydraulics has an advantage that it can print fine droplets and fine electrodes of less than 10 μm than the conventional ink jet head. In addition, the electrohydraulic patterning head of high performance has a merit of being simple in structure and capable of discharging liquid droplets relatively smaller than the nozzle orifice size.

However, the micro-wirings produced by the micro-wiring patterning technique using the discharge phenomenon of the fluid by the electro-hydrodynamics cause the U-shaped bones to form in the middle of the wiring, cracks in the wiring, .

SUMMARY OF THE INVENTION It is an object of the present invention to provide a fine interconnect formation method capable of improving the texture compactness of a fine interconnect using an alloy.

It is another object of the present invention to provide a method of preventing U-shaped bone formation in the middle of a fine wiring width, which is realized by laser chemical vapor deposition (LCVD), electrohydrodynamic (EHD) ink jet technology or a combination thereof And a method of forming a fine wiring capable of removing a crack in the wiring and forming a line width smaller than 3.3 탆.

According to an aspect of the present invention, there is provided a method of forming a fine wiring, comprising: forming a wiring on a substrate using an alloy material; and thermally treating the wiring with a laser.

In one embodiment, the alloying material may comprise tungsten (W) and molybdenum (Mo).

In one embodiment, the alloying material may be 30 wt% to 70 wt% tungsten and 70 wt% to 30 wt% molybdenum. The alloying material may further contain a predetermined amount of platinum (Pt).

In one embodiment, the alloying material may comprise 50 wt% tungsten and 50 wt% molybdenum.

In one embodiment, the alloying material comprises different first and second metals selected from tungsten (W), molybdenum (Mo), silver (Ag), gold (Au), and aluminum The first metal and the second metal may be the second largest material and the second largest material in the fine wiring pattern. The content of the first metal and the second metal may be 30 wt% to 70 wt% and 70 wt% to 30 wt% in the order described. The alloying material may further contain a predetermined amount of platinum (Pt).

In one embodiment, the step of heat-treating may be performed after selectively heating up to a depth of 1 mu m from the surface of the wiring, followed by cooling. In the heat-treating step, the wiring may be heated in a temperature atmosphere of 500 ° C to 650 ° C.

In one embodiment, the forming may utilize laser chemical vapor deposition (LCVD).

In one embodiment, the forming may utilize an electrohydrodynamic (EHD) jet.

In the case of using the above-described fine wiring forming method, it is possible to increase the texture density of the fine wiring. In particular, the fine wiring using laser chemical vapor deposition (LCVD) or electrohydrodynamic (EHD) It is possible to prevent the U-shaped ridges from being formed in the middle of the wiring in the wiring formation technology, to remove the cracks in the wiring, and to have a line width as small as about 2.3 mu m.

1 is a flowchart illustrating a method of forming a fine wiring according to an embodiment of the present invention.
FIG. 2 is a view showing the film quality before and after the heat treatment of the alloy wiring according to the fine wiring forming method of FIG. 1 in comparison with the film quality of a single tungsten wiring.
FIG. 3 is an exemplary view showing a state before and after the heat treatment of the alloy wiring of FIG.
Fig. 4 is a view for explaining the evaluation results of the heat treatment of the alloy wiring of Fig. 3;
Fig. 5 is a diagram schematically showing a result of the heat treatment evaluation of the alloy wiring of Fig. 3;
FIG. 6 is a view showing a change in the alloy wiring of FIG. 2 before and after the heat treatment. FIG.
Fig. 7 is another example showing the change of the alloy wiring of Fig. 2 after the heat treatment. Fig.
8A to 8D are views for explaining a heat treatment process of an alloy wiring according to the fine wiring forming method of FIG.
FIG. 9 is a view showing the composition ratios of alloying materials that can be employed in the fine wiring forming method according to another embodiment of the present invention.
Fig. 10 is an exemplary diagram showing a state of an alloy wiring before and after a heat treatment in a method of forming a fine wiring using the alloy material of Fig.
11 is a view for explaining a result of evaluation of the heat treatment of the alloy wiring shown in Fig.
12 is a diagram schematically showing a result of a heat treatment evaluation of the alloy wiring shown in Fig.
13 is a view showing the state of the alloy wiring of FIG. 10 after heat treatment.
FIG. 14 is a view showing a composition ratio of an alloy material that can be employed in the method of forming a fine wiring according to another embodiment of the present invention. FIG.
15 is an exemplary view showing a material composition ratio of a single metal wiring that can be employed in the method of forming a fine wiring according to another embodiment of the present invention.
FIG. 16 is an exemplary view showing a wiring state before and after the heat treatment of the method of forming a fine wiring using the single metal wiring shown in FIG. 15 in contrast.
17 is a view for explaining a result of the heat treatment evaluation of the single metal wiring shown in Fig.
18 is a diagram schematically showing a result of the heat treatment evaluation of the single metal wiring shown in Fig.
FIG. 19 is a view including electron micrographs showing an enlarged view of a change in the single metal wiring before and after the heat treatment in FIG. 16; FIG.
FIG. 20 is an exemplary view showing a change in thickness of the single metal wiring of FIG. 16 after heat treatment;
21 is an exemplary view of a fine interconnect formation apparatus according to another embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms related to "comprising "," having ", and the like are intended to specify the presence of stated features, integers, steps, operations, elements, parts, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Unless otherwise defined herein, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted in a manner consistent with the contextual meaning of the related art, and are not to be construed as ideal or overly formal, unless explicitly defined herein.

Hereinafter, preferred embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a flowchart illustrating a method of forming a fine wiring according to an embodiment of the present invention.

Referring to FIG. 1, a method of forming a fine wiring according to the present embodiment includes a first step (S10) of forming a fine wiring on a substrate and a second step (S20) of heat-treating the wiring using a laser . The method of this embodiment can improve the texture density and performance of a wiring by forming a fine wiring using an alloy material and performing a heat treatment with a laser in forming a fine wiring. Performance here can include the overall performance of reduced resistance dissipation, reduced average resistance, reduced deposition linewidth, improved internal film quality, and crack removal.

Specifically, in the first step S10, a fine wiring pattern having a line width of several micrometers (占 퐉) is formed on a substrate. In the first step S10, various conventional patterning techniques for forming a fine wiring pattern can be used. Preferably, laser chemical vapor deposition (LCVD) or electrohydrodynamic (EHD) ink jet technology may be used.

The fine wiring pattern may be formed as a single layer structure on the substrate or may be formed as a laminate or a multilayer structure. In the manufactured electronic component, the fine wiring pattern can be covered with an insulating layer of an oxide film or a nitride film.

The wiring material may include tungsten (W) and molybdenum (Mo). In another embodiment, the wiring material may further comprise at least one material selected from silver (Ag), copper, gold (Au), platinum (Pt), aluminum (Al) The fine wiring pattern formed from such a wiring material may contain a carbon atom or an oxygen atom.

In the second step S20, the above-described specific alloying material is subjected to a laser heat treatment for further improvement in performance, unlike the case of forming a fine wiring pattern using techniques such as LCVD or EHD jet, .

The laser heat treatment may be implemented so as to selectively heat the surface of the wiring to a depth of 1 mu m in a temperature atmosphere of 500 DEG C to 650 DEG C and then cool it. Cooling may include, but is not limited to, slow cooling to room temperature.

FIG. 2 is a view showing the film quality before and after the heat treatment of the alloy wiring according to the fine wiring forming method of FIG. 1 in comparison with the film quality of a single tungsten wiring. In Fig. 2, each of the alloy wiring and the single tungsten wiring is covered with an insulating layer.

Referring to FIG. 2, the method of forming a fine wiring according to the present embodiment is characterized in that the resistance, the resistance spread, the cross-sectional state, the line width, the annealing Effects and the like can be exhibited. As the alloy wiring, a material composed of 50 wt% of tungsten and 50 wt% of molybdenum was used. The material of the tungsten wiring may be a chemical compound represented by the chemical formula W (CO) 6.

As a result of the experiment on the alloy wiring, the resistance per unit area was measured to be lowered from about 200Ω to about 107Ω, and furthermore, after laser heat treatment, it was measured to be lowered to about 94Ω. It was confirmed that the resistance scattering was reduced by about 30% when compared with before and after laser annealing. As a result of the observation of the cross - sectional state, the surface roughness before and after the laser annealing was similar, but the internal film quality was better when the laser annealing was performed. In addition, the line width of the fine wiring was measured to be 1.0 mu m smaller than that before the laser annealing and maintained at about 2.3 mu m.

As a result of the test on the tungsten wiring, the resistance per unit area was measured to be reduced from about 150 Ω to about 72 Ω, and after the additional laser annealing, it was measured to be about 62 Ω. As a result of the observation of the cross - sectional condition, it was confirmed that the inner film quality was similar before and after the laser heat treatment, and the crack was removed according to the porosity deformation by the laser heat treatment. Further, the line width of the fine wiring was measured to be about 2.0 탆 reduced to about 2.5 탆 compared with that before laser heat treatment.

Hereinafter, embodiments of various alloy wirings will be described with reference to FIGS. 3 to 14, and then a single tungsten wiring will be described with reference to FIGS. 15 to 20. FIG.

FIG. 3 is an exemplary view showing a state before and after the heat treatment of the alloy wiring of FIG. Fig. 4 is a view for explaining the evaluation results of the heat treatment of the alloy wiring of Fig. 3; Fig. 5 is a diagram schematically showing a result of the heat treatment evaluation of the alloy wiring of Fig. 3;

The material of the alloy wiring according to this embodiment may include tungsten (W) and molybdenum (Mo). In particular, the alloy wiring can be composed of 50 wt% of tungsten and 50 wt% of molybdenum.

In order to improve the performance of the fine wiring formed of the wiring material described above, laser heat treatment is performed in this embodiment. The appearance of the fine wiring patterns before and after the laser heat treatment is as shown in Fig. In FIG. 3, the fine wiring pattern after the laser heat treatment shows excellent performance such as reduction in line width as compared with the fine wiring pattern before laser heat treatment.

As shown in FIG. 4, the resistance average measured before the annealing (annealing) was about 107.29? In seven experiments on the alloy wiring formed on the substrate. However, after the laser annealing, 94.29?. At the maximum, about 19 Ω decreased and at least about 13 Ω decreased.

Also, as shown in FIG. 5, the deposition width decreased from 3.3 .mu.m to 2.3 .mu.m and decreased by 1.0 .mu.m in most of the experimental examples. The average resistance was reduced by about 13 OMEGA from about 107 OMEGA to about 94 OMEGA. And the resistance spread was reduced by about 30% from about 6.9 ohms to about 4.9 ohms.

As described above, it was confirmed that the performance of the alloy wiring after the laser annealing according to the present embodiment was superior to that of the alloy wiring before the laser heat treatment or after the other heat treatment.

FIG. 6 is a view showing a change in the alloy wiring of FIG. 2 before and after the heat treatment. FIG. Fig. 7 is another example showing the change of the alloy wiring of Fig. 2 after the heat treatment. Fig.

In the method of forming a fine wiring according to the present embodiment, in the case of forming a wiring using an alloy material, it was confirmed that the alloy wiring changed from an unstable state to a stable state due to the annealing effect by the laser heat, thereby increasing the density of the internal film quality .

In addition, a zapping operation for correcting the black defect of the alloy wiring can be performed to lower the average resistance to 107 1. The jumping operation may include an improved jumping operation in this embodiment by hot air, microwaves, or a combination thereof. The average resistance can then be significantly reduced from 107 Ω to 94 Ω by annealing by laser annealing.

As shown in FIG. 6, in the above-described fine wiring forming method, U-shaped crests are generated in the middle of the wiring when the alloy wiring is not heat treated, but after the heat treatment is applied, The U-shaped bony pattern disappears (see A2). In addition, when the alloy wiring was not heat-treated, cracks were generated in the inside of the fine interconnections of about 50% or about one of the two (see B1). However, after application of the heat treatment, It can be confirmed that the crack is removed (see B2).

As shown in Fig. 7, it can be seen that, when the heat treatment of the present embodiment is applied to the alloy wiring, the line width of the wiring is reduced from about 3.3 mu m to about 2.3 mu m.

8A to 8D are views for explaining a heat treatment process of an alloy wiring according to the fine wiring forming method of FIG.

Referring to FIGS. 8A to 8D, the method for forming a fine wiring according to the present embodiment includes a laser annealing process. The laser annealing process aligns specific fine wirings among the various fine wiring patterns to a laser focus (see FIG. 8A), preheats the wafer in a pre-set temperature atmosphere (see FIG. 8B) Can be made to heat with the laser beam in a temperature atmosphere higher than the preheating temperature before falling below the temperature (cf. Fig. 8c). The laser beam may have a circular cross-sectional shape adapted to a specific fine interconnect (see FIG. 8D).

The heating by the laser beam can be performed by irradiating the laser beam on the upper surface side or the lower surface side of the substrate. In this embodiment, a ray-spot beam having a circular cross-section is irradiated to the center fine wiring among three fine wiring patterns (see Fig. 8D). In this case, in a preferred embodiment, the laser beam for the laser heat treatment can be irradiated on the wiring surface. The laser beam can be selectively heated to a depth of 1 [mu] m from the wiring surface at a temperature of 500 [deg.] C to 650 [deg.] C.

FIG. 9 is a view showing the composition ratios of alloying materials that can be employed in the fine wiring forming method according to another embodiment of the present invention.

Referring to FIG. 9, the material of the alloy wiring according to this embodiment may include tungsten (W) and molybdenum (Mo). The fine wiring pattern formed on the substrate by such an alloying material may further include a relatively small amount of carbon atoms (C), oxygen atoms (O), and the like.

Table 1 shows the contents of constituent elements of the wiring material.

Element Wt% At% C (CK) 02.53 15.74 O (OK) 04.93 23.00 W (WM) 28.90 11.73 Mo (MoL) 63.64 49.52

As shown in Table 1, the content ratio of the element contained in the alloy wiring according to this embodiment may be 28.90 wt% of tungsten, 63.64 wt% of molybdenum, 4.93 wt% of oxygen and 02.53 wt% of carbon. In Table 1, the weight% (Wt%) of each element is also expressed in terms of At%.

The alloying material for the above-described alloy wiring can cope with the case where the content ratio (based on weight%) of tungsten (W) and molybdenum (Mo) is 3: 7. By using such an alloying material, it is possible to improve the wiring performance by forming a fine wiring pattern on the substrate and performing laser heat treatment.

Fig. 10 is an exemplary diagram showing a state of an alloy wiring before and after a heat treatment in a method of forming a fine wiring using the alloy material of Fig. 11 is a view for explaining a result of evaluation of the heat treatment of the alloy wiring shown in Fig. 12 is a diagram schematically showing a result of a heat treatment evaluation of the alloy wiring shown in Fig. 13 is a view showing the state of the alloy wiring of FIG. 10 after heat treatment.

The material of the alloy wiring according to this embodiment may contain tungsten (W) and molybdenum (Mo) in the order of 30 wt% and 70 wt%, respectively. In order to improve the performance of the fine wiring formed of the wiring material described above, laser heat treatment is performed in this embodiment. The laser annealing includes laser annealing.

The appearance of the fine wiring patterns before and after the laser heat treatment is as shown in Fig. In FIG. 10, the fine wiring pattern after the laser heat treatment exhibits excellent performance such as reduction in line width as compared with the fine wiring pattern before the laser heat treatment.

As shown in FIG. 11, the resistance average measured before the annealing (annealing) was about 108.6 OMEGA, after the laser annealing, that is, after the annealing, Was changed to about 99.4?. At the maximum, about 19 Ω decreased and at least about 5 Ω decreased.

Further, as shown in FIG. 12, in most of the experimental examples, the deposition width decreased from 3.4 .mu.m to 2.3 .mu.m and decreased by 1.1 .mu.m. The average resistance decreased by about 10 Ω from about 109 Ω to about 99 Ω. However, the resistance spread increased from about 4.9 Ω to about 5.9 Ω by about 20%.

As described above, it has been confirmed that the performance of the alloy wiring after the laser annealing according to the present embodiment is partially superior to that of the alloy wiring before the laser heat treatment or after the other heat treatment. In particular, as shown in Fig. 13, it can be seen that the film quality after the heat treatment is relatively superior to the film quality after heat treatment (see Fig. 2) of the single tungsten wiring.

On the other hand, in the modified example of this embodiment, the content ratio of tungsten (W) to molybdenum (Mo) (based on weight%) was also tested in the order of 7: 3. As a result, it was confirmed that the wiring performance similar to the alloy material having the content ratio of 3: 7 was exhibited.

According to the above-described embodiments, the fine wiring forming method according to the present embodiment shows excellent wiring performance in the range of 30 to 70% by weight and 50 to 30% by weight regardless of the order in which the content ratio of tungsten and molybdenum is written. .

Hereinafter, a case where a specific element is added to an alloying material will be described.

FIG. 14 is a view showing a composition ratio of an alloy material that can be employed in the method of forming a fine wiring according to another embodiment of the present invention. FIG.

Referring to FIG. 14, the material of the alloy wiring according to this embodiment may include tungsten (W) and molybdenum (Mo). Further, the wiring material may further contain a predetermined amount of platinum (Pt). The fine wiring pattern formed on the substrate using such an alloying material may further include a relatively small amount of carbon atoms (C), oxygen atoms (O), and the like.

The content of the wiring material in the constituent elements is shown in Table 2.

Element Wt% At% C (CK) 03.74 25.81 O (OK) 03.59 18.59 W (WM) 48.27 21.77 Pt (PtM) 10.34 04.40 Mo (MoL) 34.06 29.43

As shown in Table 2, the content ratio of elements contained in the alloy wiring according to this embodiment may be 48.27 wt% of tungsten, 34.06 wt% of molybdenum, 10.34 wt% of platinum, 3.59 wt% of oxygen and 03.74 wt% of carbon. In Table 2, the weight% (Wt%) of each element is also expressed in terms of At%.

In addition, the content ratio of the elements contained in the alloy wiring material in Table 2 may be measured or calculated by matrix correction or ZAF correction. Matrix correction or ZAF correction is based on the fact that the amount of X-ray differs depending on the element of the sample generated in an energy dispersive spectrometer (EDS) using a scanning electron microscope (SEM) / RTI >

Such an alloy wiring material can cope with a case where the content ratio of tungsten (W) to molybdenum (Mo) is about 5: 3.5 and another metal such as platinum is contained (about 10% by weight). Even when such an alloy wiring material is used, the performance of the wiring can be improved by forming a fine wiring pattern on the substrate and performing laser heat treatment.

Hereinafter, the case of single metal wiring will be described.

15 is a graph showing a material composition of a single metal wiring that can be employed in a method of forming a fine wiring according to another embodiment of the present invention.

Referring to FIG. 15, the material of the single metal wiring that can be used for the fine wiring pattern may include tungsten (W). The fine wiring pattern formed on the substrate using a single tungsten material may further contain a small amount of elements such as carbon (C) and oxygen (O).

The content of the tungsten wiring material in the element is shown in Table 3.

Element Wt% At% C (CK) 03.04 27.77 O (OK) 02.30 15.74 W (WM) 94.66 56.49

FIG. 16 is an exemplary view showing a wiring state before and after the heat treatment of the method of forming a fine wiring using the single metal wiring shown in FIG. 15 in contrast. 17 is a view for explaining a result of the heat treatment evaluation of the single metal wiring shown in Fig. 18 is a diagram schematically showing a result of the heat treatment evaluation of the single metal wiring shown in Fig.

FIG. 16 shows a state in which fine wiring patterns are formed on a substrate using a single tungsten material, and then the state of the fine wiring patterns before and after the laser heat treatment is performed. As shown in Fig. 16, it can be seen that the line width of the fine wiring pattern after laser heat treatment is reduced as compared with the line width of the fine wiring pattern before laser heat treatment.

As shown in FIG. 17, as a result of seven tests on single tungsten wiring, the resistance of each fine wiring pattern having a constant length measured before the annealing (annealing) was 62, 73, 63, 78 and 82 , 73, 75 (Ω), and the average was about 72.29Ω. The resistances measured after laser annealing, ie after annealing, were 60, 62, 51, 72, 77, 58 and 57 Lt; / RTI > In the results of seven experiments, it was confirmed that the resistance to the fine wiring pattern was reduced by a maximum of 17? And a minimum of 2?, Resulting in a large deviation.

Further, as shown in Fig. 18, the deposition line width was reduced from 4.5 탆 to 2.5 탆 and decreased by 2.0 탆. The average resistance was found to be reduced by about 10? From about 72? To about 62?. And the resistance spread increased from about 7.4Ω to about 9.0Ω by about 18%.

FIG. 19 is a view including electron micrographs showing an enlarged view of a change in the single metal wiring before and after the heat treatment in FIG. 16; FIG. FIG. 20 is an exemplary view showing a change in thickness of the single metal wiring of FIG. 16 after heat treatment;

A predetermined effect can be obtained by applying the fine wiring forming method of the present embodiment to a single tungsten wiring. As shown in Fig. 19, in the case where a single tungsten wiring was not heat treated, a U-shaped crest was formed in the middle of the wiring (see A1), but after the heat treatment application, the U- (See A2). In addition, when the alloy wiring was not heat treated, cracks occurred in about 17% or about one out of six (see B1) in the wiring, but it was found that the cracks in the corresponding wiring were removed after application of the heat treatment (See B2).

In the above case, a zapping operation for correcting black defects of a single tungsten wiring can be performed to lower the average resistance from 150 OMEGA to 72 OMEGA, and annealing by laser annealing can further reduce the average resistance to 72 OMEGA It can be lowered to 62Ω.

Thus, in the case of a fine wiring pattern using a single tungsten material, the tungsten wiring changes from the unstable state (A1) to the stable state (A2, B2) due to the annealing effect by the laser heat similarly to the present embodiment, It is seen that the density increases.

Further, when the heat treatment of this embodiment is applied to a single tungsten wiring, the line width of the wiring can be reduced from about 4.5 占 퐉 to about 3.06 占 퐉 to about 2.3 占 퐉 (see FIG. 20).

The above-described laser heat treatment includes, but is not limited to, a method of condensing a laser beam with a condenser lens and scanning the wiring surface with a scanner or a stage. It is possible to heat-treat a plurality of fine wirings or line-shaped fine wirings by a reflected laser beam formed by a reflecting mirror with a substrate interposed therebetween in order to increase the efficiency of the laser heat treatment.

21 is an exemplary view of a fine interconnect formation apparatus according to another embodiment of the present invention.

Referring to FIG. 21, the fine interconnect formation apparatus according to the present embodiment includes a target substrate S, a main laser 210, a sintering laser 230, an objective lens 220, A nozzle tip 100, a transmit illumination 240, a reflective illumination 245, a camera, mirror members BS1 and BS2, and a slit. In addition, the fine wiring forming apparatus may further include a control module (not shown) of the autofocus module. The main laser 210 may be, but is not limited to, a Zap laser or a similar type or structure of lasers.

According to the apparatus of this embodiment, an electrode is not formed under the substrate, which is affected by the size of an electric field formed according to the distance from the substrate S to be processed, and an electrohydrodynamic (EHD) The upper electrode can be formed. At this time, the pulse can be controlled under the preset condition and applied to the upper electrode. That is, in this embodiment, the conductive ink is finely ejected from the EHD nozzle through high frequency pulse control to form a fine metal wiring.

When such an apparatus for fine wire formation is employed, a manufacturing apparatus can be constructed in which an EHD nozzle 100 is inserted between a lens of an optical system of an existing laser device and a substrate without using a separate camera module for observation, The metal line of the desired fine wiring pattern can be efficiently formed.

As another example of the configuration, the fine interconnect formation apparatus according to the present embodiment supports a substrate on which fine interconnects are formed, and a preheating means such as a heater is coupled to the substrate and a thermo- A heater plate to which the sensor is coupled, a raw material supply means including a nozzle for discharging oxygen and a nozzle for discharging a precursor, and a laser for irradiating an infrared laser (IR-laser) , Or may further include at least one of the following.

As another example of the configuration, the fine wire formation apparatus according to the present embodiment includes a plate that supports a substrate on which fine wires are formed and is coupled with an actuator; A stage controller for controlling two-axis driving of the actuator; A light source for preheating or illuminating the substrate on the plate; An electrohydraulic head (EHD head) arranged on the substrate; An ink flow controller for supplying ink to the electrohydraulic head; An air controller connected to the ink supply controller for controlling the air pressure and the vacuum pressure of the ink chamber in the ink supply controller to a desired condition; A high voltage controller that supplies a high voltage power of several hundred volts or more to an electrohydraulic head; A camera for photographing the discharge process of the electrohydraulic jet on the substrate at high speed; And a main control system for controlling the operation of the stage controller, the ink supply controller, the high voltage controller, and the camera.

According to the present embodiment, the metal material can be effectively deposited on the substrate by using the directivity / directionality and the monochromaticity of the laser light source. The directionality can be used to very accurately aim the desired energy in the region from the wiring surface to a certain depth in a laser of a specific wavelength, thereby effectively performing local deposition or heat treatment. Monochromaticity can be used to directly deposit reacting molecules in wiring by stimulating electrons or vibration energy levels with thermal energy. The precise control of this energy flow is advantageous in that the deposition can be performed at a substrate temperature much lower than the temperature required for thermal parallelism. In addition, it is possible to simplify complicated processes such as etching, development, deposition, etc., and make high viscosity inks containing conductive metal particles, organic materials, carbon nanotubes, and other functional materials into droplets of several micrometers It is possible to form a desired fine pattern on the substrate.

The use of the fine interconnect formation apparatus of the above-described embodiment has the advantage of improving the texture density of the fine interconnections formed on the substrate, lowering the unit resistance to tens of ohms, and reducing the line width to 2 mu m. In addition, it is possible to remove the U-shaped troughs formed in the middle portion of the fine wiring, to remove the cracks generated in the wiring, and to reduce the line width of the wiring to 2.3 탆.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that

Claims (11)

Forming wiring on the substrate using an alloy material; And
And thermally treating the wiring with a laser. The method according to claim 1,
Wherein the alloy material comprises tungsten (W) and molybdenum (Mo). The method of claim 2,
Wherein the alloy material is 30 wt% to 70 wt% of tungsten and 70 wt% to 30 wt% of molybdenum. The method of claim 3,
Wherein the alloy material further contains a predetermined amount of platinum. The method of claim 2,
Wherein the alloy material is 50 wt% tungsten and 50 wt% molybdenum. The method according to claim 1,
Wherein the alloy material comprises different first metals and second metals selected from tungsten (W), molybdenum (Mo), silver (Ag), gold (Au) and aluminum (Al) 2 < / RTI > metal is the material with the largest weight content and the second largest material in the fine wiring pattern. The method of claim 6,
Wherein the contents of the first metal and the second metal are 30 wt% to 70 wt% and 70 wt% to 30 wt% in the order described. The method according to claim 1,
Wherein the heat treatment is performed by selectively heating the surface of the wiring to a depth of 1 占 퐉 and then cooling the wiring. The method of claim 8,
Wherein the heat treatment is performed by heating the wiring in a temperature atmosphere of 500 deg. C to 650 deg. The method according to claim 1,
Wherein the forming comprises using laser chemical vapor deposition (LCVD). The method according to claim 1,
Wherein the forming comprises using an electrohydrodynamic (EHD) jet.

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