JP2003273092A - Film-forming method, film-forming apparatus, manufacturing method of device and electronic equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film-forming method for flattening a film by suppressing lifting of ends of the film in drying, and to provide a film-forming apparatus. <P>SOLUTION: The film-forming apparatus discharges a liquid material from a liquid discharge head 21 as droplets and forms the film of the liquid material on a substrate 20, which is a substance to be treated forming a pattern. A control means lessens the amount of arrangement of the liquid material arranged on the substrate 20 in a region 51 outside of a pattern region 50 as compared with the pattern area 50, in which the pattern is formed. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming method and a film forming apparatus, and in particular, a liquid material is ejected from a liquid ejection head as droplets to form a film of the liquid material on a substrate to be processed. The present invention relates to a film forming method and a film forming apparatus.

[0002]

2. Description of the Related Art Recently, as a technique for forming a film of a liquid material on a substrate as an object to be processed, the use of a technique using a liquid discharge method tends to expand. In a film forming technique using a liquid discharge method, generally, a liquid material is discharged as droplets from a plurality of nozzles provided in the liquid discharge head while relatively moving the substrate and the liquid discharge head, and the droplets are discharged onto the substrate. It is repeatedly applied on top to form a coating film,
Compared with the conventional film forming technology such as the spin coating method, there are advantages that the liquid material is less wasted and discharge control of the liquid material is easier.

[0003]

The coating film of the liquid material arranged on the substrate usually evaporates the fastest in the vicinity of the edge of the film because the evaporated solvent component easily diffuses to the surroundings. Therefore, at the edge of the film, the film thickness is more likely to change more than in other regions, such as the film rising during drying.

The present invention has been made in view of the above-mentioned circumstances, and provides a film forming method and a film forming apparatus capable of suppressing the swelling of the end portion of the film during drying and flattening the film. The purpose is to do.

Another object of the present invention is to provide an electronic device capable of improving its performance.

Another object of the present invention is to provide a device manufacturing method capable of manufacturing high quality devices.

[0007]

In order to achieve the above-mentioned object, the film forming method of the present invention is such that a liquid material is ejected from a liquid ejection head in the form of liquid droplets to form a pattern on an object to be processed. A film forming method for forming a film of the liquid material, comprising:
An arrangement amount of the liquid material arranged on the object to be processed,
The area outside the pattern area is smaller than the pattern area in which the pattern is formed.

In the film forming method of the present invention, the amount of the liquid material to be disposed on the object to be processed is reduced in the area outside the pattern area compared to the pattern area, so that the edge of the film rises during drying. Is suppressed and the film is flattened. At this time, since the region where the amount of the liquid material to be arranged is reduced is outside the pattern region, the functionality of the film with respect to the pattern is hardly deteriorated. In addition, in this film forming method, since the liquid material is ejected as droplets, it is possible to easily control the above-mentioned arrangement amount for each region.

In the above film forming method, it is preferable that the amount of the liquid material arranged in a region outside the pattern region is gradually reduced from the pattern region side toward the outside. By gradually reducing the amount of the liquid material arranged from the pattern region side toward the outside, it is possible to suppress the swelling of the end portion of the film during drying while suppressing the change of the film in the pattern region.

In the above film forming method, in order to control the amount of the liquid material arranged, for example, the size of the droplet of the liquid material arranged on the object to be processed may be changed. The distance between the liquid material droplets disposed on the object to be processed may be changed. The arrangement amount of the liquid material can be easily controlled by changing the size of the liquid droplets or the distance between the liquid droplets.

In order to achieve the above-mentioned object, the film forming apparatus of the present invention ejects the liquid material as droplets from the liquid ejection head, and deposits the liquid material on an object on which a pattern is formed. A film forming apparatus for forming a film, comprising control means for controlling an arrangement amount of the liquid material arranged on the object to be processed, wherein the control means sets the arrangement amount of the liquid material in the pattern. Compared to the pattern area that is formed,
It is characterized in that the amount is reduced in an area outside the pattern area.

Since the film forming apparatus of the present invention is provided with the control means for controlling the arrangement amount of the liquid material arranged on the object to be processed, the above-mentioned coating method of the present invention can be carried out.
That is, the control unit reduces the amount of the liquid material arranged in the area outside the pattern area as compared with the pattern area in which the pattern is formed, thereby suppressing the swelling of the edge of the film during drying, Is flattened.

In the above film forming apparatus, it is preferable that the control means gradually reduces the amount of the liquid material arranged in a region outside the pattern region from the pattern region side toward the outside. . The amount of liquid material placed,
By gradually decreasing outward from the pattern region side, it is possible to suppress the change of the film in the pattern region and suppress the swelling of the end portion of the film during drying.

Further, in the above film forming apparatus, the control means may change the size of the liquid droplet of the liquid material arranged on the object to be processed, and is arranged on the object to be processed. The distance between the liquid material droplets may be changed. The arrangement amount of the liquid material can be easily controlled by changing the size of the liquid droplets or the distance between the liquid droplets by the control means.

The electronic equipment of the present invention is characterized by including a film formed by using the above-described film forming apparatus as a constituent element. In the above electronic device, since the film formed using the above film forming apparatus is provided as a constituent element,
The film has high flatness and good performance can be obtained.

The device manufacturing method of the present invention is a device manufacturing method having a film forming step of forming a pattern of a liquid material in a predetermined region on an object to be processed to form a film.
In the film forming step, by using the film forming method described above, the amount of the liquid material arranged on the object to be processed is larger than that in the pattern region in which the pattern is formed, outside the pattern region. It is characterized in that the film is formed in a reduced area. In the device manufacturing method described above, a film with high flatness can be obtained, so that a high quality device can be manufactured.

[0017]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 schematically shows an example of an embodiment of a film forming apparatus according to the present invention, and the film forming apparatus of this embodiment is a liquid discharge type film forming apparatus.

In FIG. 1, a film forming apparatus 10 includes a liquid ejection head 21 for ejecting a liquid material such as a resist toward a substrate 20, a substrate stage 22 on which a substrate 20 which is an object to be processed is mounted, and these components are integrated. Control device 23 for dynamically controlling
And so on. The liquid ejection head 21 and the substrate stage 22 are arranged in a chamber (not shown), and in the chamber 24, the type and temperature of gas are controlled. Further, in FIG. 1, an XYZ orthogonal coordinate system is used. In the XYZ orthogonal coordinate system, the X axis and the Y axis are set so as to be parallel to the substrate stage 22 on which the substrate 20 is mounted, and the Z axis is the substrate. It is set in a direction orthogonal to the stage 22.

As the substrate 20, in this embodiment, a wafer made of silicon used for manufacturing a semiconductor element is used. A resist (photoresist) is used as the liquid material applied on the substrate 20. That is, the present embodiment applies the present invention to a resist film forming apparatus used in a semiconductor element manufacturing process.
The film forming apparatus to which the present invention is applied is not limited to a semiconductor element manufacturing process, and may be a liquid crystal display element, an EL element,
It can be applied not only to devices such as image pickup devices (CCD etc.) and magnetic heads but also to manufacturing devices such as color filters and touch panels, and also to large substrates such as liquid crystal substrates of 1000 × 1200 mm. It is valid.
Therefore, the substrate used in the present invention is not limited to the silicon substrate, and substrates made of other materials such as a glass substrate, a quartz substrate, a ceramics substrate, a metal substrate, a plastic substrate, and a plastic film substrate are also applicable. Further, the liquid material used in the present invention is not limited to a resist, and is a color material, a liquid material for a protective film, or an SOG (Sp) that is a liquid material for forming a coated silicon oxide film.
in On Glass), Low-k material for forming low dielectric constant interlayer insulating film, and other liquid materials such as other volatile liquid materials,
A liquid material containing fine particles such as metal is also applied.

The liquid ejection head 21 ejects a liquid material (resist) from the nozzle 30 by a liquid ejection method (see FIG. 2). As the liquid ejection method, various known techniques such as a piezo method in which ink is ejected using a piezo element as a piezoelectric element, a bubble method in which liquid material is ejected by bubbles generated by heating a liquid material, are used. Applicable. Among them, the piezo method has an advantage that it does not affect the composition of the material because it does not apply heat to the liquid material. In this embodiment, the piezo method is used.

FIG. 2 is a diagram for explaining the principle of discharging the liquid material by the piezo method. In FIG. 2, a piezo element 32 is installed adjacent to a liquid chamber 31 containing a liquid material. The liquid material is supplied to the liquid chamber 31 via a liquid material supply system 34 including a material tank that stores the liquid material. The piezo element 32 is connected to a drive circuit 33, and a voltage is applied to the piezo element 32 via this drive circuit 33. By deforming the piezo element 32, the liquid chamber 31 is deformed, and the liquid material is ejected from the nozzle 30. At this time, the amount of strain of the piezo element 32 is controlled by changing the value of the applied voltage, and the strain rate of the piezo element 32 is controlled by changing the frequency of the applied voltage. That is, in the liquid ejection head 21, the ejection of the liquid material from the nozzle 30 is controlled by controlling the voltage applied to the piezo element 32.

Returning to FIG. 1, the substrate stage 22 is the substrate 2
It has a vacuum suction hole for holding 0, a lift-up mechanism (both not shown), and the like, and holds the substrate 20 by suction under vacuum pressure. Further, it is arranged on a base (not shown), and is arranged so that it can be driven in a two-dimensional plane (in the XY plane in FIG. 1). Further, the substrate stage 22 has a driving device 35 including, for example, a linear motor, and under the command of the control device 23, positions and moves the substrate 20 to a predetermined position.

In the film forming apparatus 10, the liquid discharge head 2
The liquid material is applied onto the substrate 20 by relatively moving the substrate 20 and the liquid ejection head 21 via the substrate stage 22 while ejecting the liquid material from 1. As a result, a coating film of the liquid material is formed on the substrate 20.

Here, in the film forming apparatus 10 of the present embodiment, a pattern area in which a predetermined pattern is formed and an area outside the pattern area are arranged with respect to the arrangement amount of the liquid material arranged on the substrate 20 at the time of coating. There is a difference between. Figure 3
(A) and (b) schematically show the state of the liquid material immediately after being applied on the substrate 20.

As shown in the schematic cross-sectional view of FIG. 3A, on the substrate 20 immediately after coating, in the pattern region 50 where the circuit pattern for the semiconductor element is formed, a substantially constant amount of the liquid material per unit area is formed. Are arranged. In the area outside the pattern area 50 (peripheral area 51), the arrangement amount of the liquid material per unit area is smaller than that in the pattern area 50. Specifically, in the peripheral area 51,
Near the end of the pattern region 50, almost the same amount of liquid material as that in the pattern region 50 is arranged, and the amount of liquid material arranged is gradually reduced outward from there.

The width of the peripheral region 51 is appropriately set within the range of 0.5 to 5 mm, for example, according to the characteristics of the liquid material. The present invention is not limited to the above numerical values. In addition, within a range that does not cause a problem in the functionality of the film with respect to the pattern, from slightly inside the end of the pattern region 50,
The arrangement amount of the liquid material may be reduced.

As a method of controlling the arrangement amount of the liquid material, there are used a method of changing the droplet amount of the liquid material ejected from the liquid ejection head 21, a method of changing the ejection time interval, and the like. In the liquid ejection head 21, the value of the voltage applied to the piezo element is changed to change the distortion amount of the piezo element, thereby controlling the droplet amount (so-called dot size) of the liquid material ejected from the liquid ejection head 21. can do. In addition, by changing the frequency of the voltage applied to the piezo element to change the strain rate of the piezo element, the time interval of the repeated ejection of the liquid material as liquid droplets from the liquid ejection head 21 is changed, and It is possible to control the interval (so-called dot pitch) of the liquid droplets arranged in the. The dot pitch can also be controlled by the relative speed between the liquid ejection head 21 and the substrate 20 when applying the liquid material.

As shown in the schematic plan view of FIG. 3B, in the present embodiment, both the dot size and the dot pitch are changed between the pattern area 50 and the peripheral area 51 on the substrate 20. I am letting you. That is, in the pattern region 50, the liquid material having a relatively large dot size is arranged on the substrate 20 at substantially the same dot pitch, whereas in the peripheral region 51, the liquid material having a smaller dot size is smaller than that in the pattern region 50. The liquid material is arranged on the substrate 20 with a wide dot pitch. As a result, a dense dot pattern is formed in the pattern area 50, and conversely, a sparse dot pattern is formed in the peripheral area 51.
Accordingly, the arrangement amount of the liquid material per unit area in the peripheral region 51 is smaller than that in the pattern region 50.

These liquid materials arranged as a dot pattern on the substrate 20 are then adhered to each other to form a coating film. The droplet-shaped liquid materials arranged in the peripheral region 51 do not necessarily have to adhere to each other completely. When the coating film is formed on the substrate 20, the liquid material is then dried (or fired) and solidified.

Drying (or firing) a coating film of a liquid material
As the technique, a substrate is placed in a heating furnace (bake oven) to heat and dry the coating film in the furnace, a substrate is mounted on a plate (hot plate), and the coating film is heated and dried through the plate. A hot plate method is used, a substrate is placed in a sealable chamber to reduce the pressure inside the chamber, and the coating film is dried under reduced pressure.

The coating film of the liquid material arranged on the substrate is
Evaporation is the fastest near the edge of the film, so that the edge of the film is likely to have a large change in film thickness as compared with other regions, such as swelling during drying, but in the present embodiment, the film thickness on the substrate 20 is increased. Since the amount of the liquid material to be arranged is smaller in the peripheral region 51 outside the pattern region 50 than in the pattern region 50, swelling of the end portion of the film during drying is suppressed. That is, even if swelling occurs at the end of the coating film during drying, the amount of the liquid material arranged in that portion is smaller than that in the pattern region 50, so that the swelling of the film is extremely greater than the film thickness in the pattern region 50. Thickening is unlikely to occur.

In particular, in this embodiment, the pattern area 5 is located near the end of the pattern area 50 in the peripheral area 51.
Almost the same amount of the liquid material as 0 is arranged, and the arranged amount of the liquid material is gradually reduced outward from there, so that the liquid material at the end of the peripheral region 51 (the end of the coating film) is The arrangement amount is small, and the flatness of the film during drying is less affected by the swelling of the film. It is to be noted that the amount of liquid material to be arranged is reduced in the area outside the pattern area 50, and in the vicinity of the end portion of the pattern area 50, the liquid material is arranged in the peripheral area 51 in substantially the same amount as the pattern area 50. Therefore, the influence on the flatness of the film in the pattern region 50 is small due to the reduced amount of the liquid material arranged in the peripheral region 51. Therefore, the functionality of the film with respect to the pattern is hardly deteriorated.

Further, in this embodiment, since the arrangement amount of the liquid material is controlled by controlling the droplet discharge of the liquid material, the distribution of the arrangement amount of the liquid material with respect to the substrate can be easily controlled to a desired state. can do. For example, the characteristics of the liquid material to be used, such as the fluctuation of the film thickness during drying, may be obtained in advance, and the optimum dot pattern for flattening the film may be set according to the characteristics.

Here, in the above-described embodiment, both the dot size and the dot pitch are changed between the pattern area and the peripheral area, but only one of the dot size and the dot pitch is changed. But it's okay.
Further, the method of providing the difference in the arrangement amount of the liquid material between the pattern area and the peripheral area is not limited to the method of changing the dot pattern, and another method may be used.

FIGS. 4A and 4B show an example of another method of providing a difference in the arrangement amount of the liquid material between the pattern area and the peripheral area. In this example, the method is applied on the substrate. By forming the films by stacking a plurality of times, the above-described difference is provided in the arrangement amount of the liquid material.

That is, first, as shown in FIG. 4A, an amount of liquid material smaller than the amount originally required for the pattern region 50 is arranged and applied to both the pattern region 50 and the peripheral region 51. The film 60 is formed. Next, FIG.
As shown in (b), the liquid material is further arranged on the coating film 60 only in the pattern region 50 to form the coating film 61, and the arrangement amount of the liquid material in the pattern region 50 is set to a desired value. . As a result, the amount of liquid material arranged in the peripheral region 51 outside the pattern region 50 is smaller than that in the pattern region 50. Therefore, as in the above-described embodiment, the swelling of the end portion of the film during drying is suppressed, and the film is flattened. In the case of this example, the dot patterns may always be the same, and in this case, the discharge control can be simplified.

The number of times the coating film is applied on the substrate is not limited to two and may be three or more. In the case of three times or more, it is advisable to change the area to be applied stepwise. In this case, it becomes possible to change the arrangement amount of the liquid material in the peripheral region in a stepwise manner.

When the coating film is applied on the substrate in a superposed manner, the coating film may be preliminarily dried each time, or the next coating film may be formed immediately without drying.

Further, as shown in FIG. 5A, the liquid material is first arranged on the pattern region 50 to form the coating film 65, and thereafter, as shown in FIG. A next coating film 66 may be formed on both the 50 and the peripheral region 51 so as to cover the previous coating film 65.

In the example shown in FIG. 3, the pattern area 50 is formed in a rectangular shape, but the present invention is not limited to this, and the shape of the pattern area is arbitrary. It

FIGS. 6A and 6B show the case where there are a plurality of pattern regions 50 on the substrate 20. In this case, as shown in FIG. 6A, a coating film may be formed on each pattern region 50, or as shown in FIG. 6B, a plurality of pattern regions 50 may be collectively covered. A coating film may be formed on.

FIGS. 7A and 7B show an example of relative movement between the substrate 20 and the liquid discharge head 21 during coating. In the example of FIG. 7A, the width of the liquid ejection head 21 (the length in the Y direction in FIG. 7) is formed smaller than the width of the coating region 20a on the substrate 20 (the length in the Y direction in FIG. 7). Has been done. In this case, the liquid material is applied to the entire substrate 20 by relatively moving the substrate 20 and the liquid ejection head 21 in the X direction and the Y direction. That is, in FIG. 7A, the liquid ejection head 21 first relatively scans and moves on the substrate 20 in the X direction,
Of the application area 20a on 0, a partial area in the Y direction (upper area in FIG. 7) is applied. Subsequently, the liquid ejection head 21 shifts relatively in the Y direction, and thereafter,
Again, the substrate 20 is relatively scanned and moved in the X direction to apply a partial area in the Y direction adjacent to the area previously applied.
Thus, in the example of FIG. 7A, the liquid ejection head 21
In order to coat the entire coating area 20a on the substrate 20, the scanning movement in the X direction and the shift movement in the Y direction are repeated.

On the other hand, in the example of FIG. 7B, the width of the liquid discharge head 21 is formed larger than the width of the coating area 20a on the substrate 20. In this case, the liquid material is applied to the entire substrate 20 by relatively moving the substrate 20 and the liquid ejection head 21 only in the X direction. That is,
In FIG. 7B, the liquid ejection head 21 is connected to the substrate 20.
The entire coating area 20a on the substrate 20 is coated by performing scanning movement on the top once in the X direction. The liquid discharge head 21 is provided with a plurality of the above-described nozzles 30 (see FIG. 2) arranged side by side in the Y direction, and among the plurality of nozzles 30, the nozzle selected according to the shape of the coating region 20a on the substrate 20. Liquid material is ejected from 30.

In the film forming apparatus 10 shown in FIG. 1 above, during such relative movement, by controlling the droplet discharge or forming the coating films in layers, the pattern region and its peripheral region are formed. Can provide a difference in the amount of liquid material placed on the substrate.

In the example shown in FIG. 7, the substrate 20 is moved to perform the relative movement, but the liquid discharge head 21 may be moved to perform the relative movement, or the substrate 20 and the liquid are moved. The relative movement may be performed by moving both the ejection head 21 and the ejection head 21. When both the substrate 20 and the liquid ejection head 21 are moved, the scanning movement may be performed by the movement of one (for example, the liquid ejection head 21), and the shift movement may be performed by the movement of the other (for example, the substrate 20). The distance (distance) between the substrate 20 and the liquid ejection head 21 is adjusted via a Z drive device (not shown). Further, the liquid ejection head 21 or the X of the substrate 20
A means for adjusting the inclination with respect to the Y plane and a means for adjusting the rotation angle in the XY plane may be provided.

By using the film forming method and the film forming apparatus of the present invention, it is possible to improve the film thickness accuracy. Therefore, it is possible to manufacture a highly accurate or high quality device when manufacturing a semiconductor element. Become. In the above-described embodiments, the example in which the present invention is applied to the semiconductor element manufacturing process is shown. However, by applying the present invention to other manufacturing processes, a liquid crystal display element, an EL element, an imaging element (CC
D) In addition to devices such as magnetic heads, it is possible to improve the quality of various devices or electronic devices such as devices such as color filters and touch panels. That is, in an electronic device including a film formed by using the film forming apparatus of the present invention as a part of the constituent elements, good performance can be obtained because the film has high flatness.

The preferred embodiment of the present invention has been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to this example. The shapes, combinations, and the like of the constituent members shown in the above-described examples are merely examples, and various changes can be made based on design requirements and the like without departing from the spirit of the present invention.

[0048]

According to the film forming method and the film forming apparatus of the present invention, the amount of the liquid material arranged on the object to be processed is reduced in the area outside the pattern area to dry the material. It is possible to suppress the swelling of the end portion of the film at that time and to flatten the film.

Further, according to the electronic apparatus of the present invention, since the film formed by using the film forming apparatus of the present invention is provided as a constituent element, the performance can be improved.

Further, according to the device manufacturing method of the present invention, since a film having high flatness can be obtained by using the film forming method of the present invention, a high quality device can be manufactured.

[Brief description of drawings]

FIG. 1 is a diagram schematically showing an example of an embodiment of a film forming apparatus according to the present invention.

FIG. 2 is a diagram for explaining a principle of discharging a liquid material by a piezo method.

3A and 3B schematically show a state of a liquid material immediately after being applied on a substrate, wherein FIG. 3A is a schematic sectional view and FIG. 3B is a schematic plan view.

FIG. 4 is a diagram schematically showing an example of another method of providing a difference in the arrangement amount of the liquid material between the pattern region and the peripheral region.

FIG. 5 is a diagram schematically showing an example of another method of providing a difference in the arrangement amount of the liquid material between the pattern region and the peripheral region.

FIG. 6 is a diagram showing an example of a method for forming a coating film when there are a plurality of pattern regions on a substrate, (a) is an example in which a coating film is formed for each pattern region, (b)
Shows an example in which a coating film is collectively formed on a plurality of pattern regions.

FIG. 7 is a diagram showing an example of relative movement between a substrate and a liquid ejection head during coating.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Film-forming apparatus 20 ... Substrate (object to be processed) 21 ... Liquid ejection head 22 ... Substrate stage 23 ... Control device (control means) 3
0 ... Nozzle 34 ... Liquid material supply system 50 ... Pattern area 51 ... Peripheral area

Claims (10)

[Claims] 1. A film forming method for forming a film of the liquid material on an object to be processed on which a pattern is formed, by ejecting a liquid material as droplets from a liquid ejection head, the method comprising: The placement amount of the liquid material to be placed,
A film forming method, characterized in that the number of patterns is smaller in an area outside the pattern area than in a pattern area in which the pattern is formed. 2. The arrangement amount of the liquid material in a region outside the pattern region is gradually reduced from the pattern region side toward the outside.
The film forming method described in. 3. The size of a droplet of the liquid material arranged on the object to be processed is changed in order to control the amount of the liquid material arranged. The film forming method described in. 4. The distance between the droplets of the liquid material arranged on the object to be processed is changed in order to control the arrangement amount of the liquid material. The film forming method according to any one of the above. 5. A film forming apparatus for forming a film of the liquid material on an object to be processed on which a pattern is formed by ejecting the liquid material as liquid droplets from a liquid ejecting head. A control means for controlling an arrangement amount of the liquid material to be arranged is provided, wherein the control means controls the arrangement amount of the liquid material in a region outside the pattern region as compared with a pattern region in which the pattern is formed. A film forming apparatus characterized by reducing the number. 6. The control unit reduces the amount of the liquid material arranged in a region outside the pattern region stepwise from the pattern region side toward the outside. The film forming method described. 7. The film forming apparatus according to claim 5, wherein the control unit changes a size of a droplet of the liquid material arranged on the object to be processed. 8. The control means changes the distance between liquid droplets of the liquid material arranged on the object to be processed. The film forming apparatus according to. 9. An electronic device comprising a film formed by using the film forming apparatus according to claim 5 as a constituent element. 10. A method of manufacturing a device, comprising: a film forming step of forming a film of a liquid material in a predetermined region on an object to be processed to form a film, wherein the film forming step comprises: By using the film forming method according to any one of the above, the arrangement amount of the liquid material arranged on the object to be processed is larger in a region outside the pattern region than in a pattern region in which the pattern is formed. A method for manufacturing a device, characterized in that the number of films is reduced.