CN104704931B - The method and system of electric component and manufacture electric component - Google Patents

The method and system of electric component and manufacture electric component Download PDF

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Publication number
CN104704931B
CN104704931B CN201380052333.2A CN201380052333A CN104704931B CN 104704931 B CN104704931 B CN 104704931B CN 201380052333 A CN201380052333 A CN 201380052333A CN 104704931 B CN104704931 B CN 104704931B
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CN
China
Prior art keywords
circuit layer
insulating layer
layer
electron beam
irradiation
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Expired - Fee Related
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CN201380052333.2A
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Chinese (zh)
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CN104704931A (en
Inventor
S.萨克斯
H.施密特
M.莱德纳
E.亨舍尔
D.M.M.弗雷克曼
M.K.迈尔斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TE Connectivity Germany GmbH
TE Connectivity Corp
Original Assignee
Tyco Electronics AMP GmbH
Tyco Electronics Corp
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Publication of CN104704931A publication Critical patent/CN104704931A/en
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Publication of CN104704931B publication Critical patent/CN104704931B/en
Expired - Fee Related legal-status Critical Current
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283After-treatment of the printed patterns, e.g. sintering or curing methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • B23K15/0006Electron-beam welding or cutting specially adapted for particular articles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0271Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0209Inorganic, non-metallic particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0502Patterning and lithography
    • H05K2203/0545Pattern for applying drops or paste; Applying a pattern made of drops or paste
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/092Particle beam, e.g. using an electron beam or an ion beam
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/14Related to the order of processing steps
    • H05K2203/1476Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A kind of method manufacturing electric component (100) includes providing substrate (104), applying insulating layer (110) on substrate, apply circuit layer (112) on the insulating layer, with electron beam (114) irradiate insulating layer to convert insulating layer, and with electron beam irradiation circuit layer with conversion circuit layer.Substrate can be the metal substrate of high-termal conductivity.Insulating layer provides electrical isolation and effectively heat transfer between circuit layer and substrate.The method may include by light-emitting diode (LED) module (102) or need other active circuits of heat management to be connected to the circuit layer on electrical isolation/heat-conducting layer.

Description

The method and system of electric component and manufacture electric component
Technical field
The theme of this paper relates in general to electric component and manufactures the method and system of electric component.
Background technique
Active electronic high-performance components, such as high-performance light emitting diode (LED) generate big calorimetric, and the heat must be sufficiently It dissipates to operate normally on ground.In the case where LED, heat dissipation occurs on the rear side of the component, because of generated light Emit from front side.
Conventional system provides heat dissipation using the radiator (for example, aluminium) for being deposited with organic insulator.Have for driving The circuit of source electronic component is applied to the organic insulator.Organic insulator is (for example, added with particle to increase heat transfer The epoxy resin of rate) radiator must be transferred heat to.Conventional insulation layer is problematic.For example, insulating layer needs to have foot Enough breakdown voltages, sufficiently absolutely from voltage bearer circuit (in some instances, until the high pressure of 1000V size) by radiator Edge.Compared with Conventional insulation device, small breakdown voltage is typically presented in organic insulator.Need thicker organic insulator with reality So as to cause lower thermal conductivity and therefore existing breakdown voltage leads to the bad thermal coupling of radiator.
The circuit is applied to the conductive metal structure of insulating layer.The application of this layer is typically via deposition conductive gold Belong to structure to complete, the deposition of conductive metal structure by using mask (for example, vacuum evaporation, sputtering, chemical vapour deposition, Coating) either carried out by the way that metal paste or ink print are carried out subsequent heat treatment on substrate and then.These are often Advising application process, there are problems.For example, the structure size (usually millimeter or bigger magnitude) of mask used is limited by gas The minimum of the conductor metal structure for the deposition mutually realized can produce characteristic size, and the major part in material therefor will not be used In actual coating, therefore must be recycled highly.In addition, the printing and structure that is routinely heat-treated is (for example, in baking oven In) there is the undesirable feature of electrical property compared with pure metal because print request adds non-metallic additive, such as glue, it is viscous and Agent (binder) adjusts the additive for printing required mobility.In hot subsequent processing (post-treatment), these Additive is only partly removed from layer, causes coating with the coating with more high metal content (such as, close to pure metal Those) are compared to bad electrical property.In addition, the thermal stress during deposition or during heat treatment is problematic.Certain methods, Such as MID (molded-interconnect-device) and LDS (laser direct organization), uses the specialty polymer comprising metallic catalyst.? This is expensive using proprietary material in the process, and the chemical coating processing can take a very long time.
Summary of the invention
Solution is provided by manufacturing the method for electric component as described herein.The method includes providing lining Bottom applies insulating layer on substrate, by circuit layer application on the insulating layer, with electron beam irradiation insulating layer to convert insulation Layer, and with electron beam irradiation circuit layer with conversion circuit layer.Substrate can be the metal substrate of high-termal conductivity.Insulating layer provides Electrical isolation and effectively heat transfer between circuit layer and substrate.The method may include light-emitting diode (LED) module is connected to electricity Road floor.
Detailed description of the invention
The citing description present invention with reference to the drawings, in figure:
Fig. 1 shows electric component, which is made to include the electronic module on substrate.
Fig. 2 shows the electric components electron beam to be radiated on electric component accoding to exemplary embodiment to be formed System.
Fig. 3 shows the interaction of electron beam Yu electric component coating.
Fig. 4 shows the processing for being used to form electric component.
Fig. 5 shows the processing for being used to form electric component.
Fig. 6 shows the method for manufacture electric component.
Specific embodiment
Embodiment described herein includes the method for manufacturing electric component comprising: insulating layer and circuit are irradiated with electron beam Layer is to convert the layer.Embodiment described herein includes irradiating the circuit layer on insulating layer and insulating layer using electron beam to convert System of the layer to improve the one or more performances of the layer.Embodiment described herein includes having insulating layer and electricity The electric component of road floor, the insulating layer and circuit layer are improved the property of the layer by the energy from electron beam by converting Energy.Insulating layer deposition on substrate, and circuit layer deposition on the insulating layer.
Embodiment described herein may include the electric component of clad (metal clad) circuit board form, wherein electricity Conductor forms circuit on circuit boards, and electric conductor passes through electron beam treatment.The circuit of clad circuit board is arranged in insulating layer Between metal substrate.Insulating layer and electric conductor are irradiated with electron beam to convert the layer.
Embodiment described herein can form high-termal conductivity but the insulation of electrical isolation by using electron beam treatment technique Layer.For example, heat can promptly (for example, in several microseconds) generate inside insulating layer, this can convert insulating layer, with solidification The insulating layer.The heat can be used to melt or melt again the compound or material of some or all of insulating layer.At it In its embodiment, the electronics of electron beam can be reacted with the material of insulating layer, to convert insulating layer.Some insulating layer materials can be with It isolates and/or evaporates by electron beam during processing, formed with converting insulating layer.Material for insulating layer can choose for It works together with electron beam treatment well.For example, glass or ceramic forming material may be used as insulation layer structure.Fine and close height Thermal conductivity nanometer materials can be by being realized with electron beam treatment insulating layer.
Embodiment described herein can realize the electric conductor of high quality by using electron beam treatment technique.For example, heat can Promptly to generate (for example, in microsecond) in circuit layer, this can improve the electrical property of circuit layer with conversion circuit layer.Institute State some or all of compound or material that heat can be used to melt or melt circuit layer again.In other embodiments, electric Electronics in beamlet can be reacted with circuit layer material, with conversion circuit layer.Some materials in circuit layer material can located It is isolated and/or evaporates during reason, with conversion circuit composition of layer.Material for circuit layer can choose as well for electricity Beamlet processing.For example, non-alloyed combine the metal structure that may be used as circuit layer.Hard high conductivity nano material can pass through It is realized with electron beam processing circuit layer.
Embodiment described herein can provide circuit layer and electric conductor, wherein from paste or ink (to by circuit layer Be applied on insulating layer) nonmetallic (for example, organic matter) material of substantially all remnants circuit layer the electron beam treatment phase Between be removed.Treated (post-processed), and electric conductor can be close, non-porous metal coating.The circuit layer can Initial concentration with nonmetallic materials (for example, bonding agent), the initial concentration are lower than, are even much lower than conventional paste (example Such as, the paste handled in oven heat).The circuit layer can have the ultimate density of nonmetallic materials (for example, bonding agent), should Ultimate density is lower than, even much lower than uses component made of conventional paste (for example, processing in oven heat).
Embodiment described herein can be improved or select control parameter, to realize the electric conductor of high quality.Electron beam with The interaction of the coating and substrate of application can take in.Such as, it is contemplated that peace weighing apparatus includes ink or paste composition, print Brush technology (for example, differential is matched, silk-screen printing, pad printing, ink jet printing, aerosol jet printing etc.) and/or electron beam water The interaction of flat parameter.
The electric conductor that embodiment described herein produces, which can have to provide in the entire validity period of electric component, stablizes electromechanics Characteristic needed for performance.For example, electric conductor can have low and stable contact resistance, good welding characteristic, excellent abrasive resistance And/or the good tolerability for environmental degradation factor such as corrosive gas or high temperature exposure.Electron beam can be accurate Control, to allow the high spatial resolution of electric conductor.The surface smoothness of electric conductor can pass through electron beam treatment and circuit layer Material controls, to realize required characteristic.For example, electric conductor can have a coating quality appropriate, such as layer composition, film thickness, Roughness, pattern, structure etc..
The electric conductor that embodiment described herein generates, which can have, to be provided the metal substrate that dissipates the heat into from circuit layer Characteristic necessary to good thermal characteristic.Insulating layer can provide good insulation characteristic to provide enough breakdown voltages, to fill Divide ground that metal substrate insulate from voltage bearer circuit layer.
Fig. 1 shows electric component 100, and electric component 100 is fabricated to the electronic module 102 including being located on substrate 104. In the exemplary embodiment, electronic module 102 is light emitting diode (LED) module, and is hereinafter properly termed as LED module 102, still, other types of electronic module 102 or require other active circuits of heat management that can be installed to substrate 104. In the exemplary embodiment, electronic module 102 is high-power component, such as high-capacity LED.The high power tends to generate Heat, the heat need to be dissipated to protection electric component 100.In the exemplary embodiment, substrate 104 is metal substrate or dissipates Hot device, with the heat from LED module 102 that dissipates.Electric component 100 is properly termed as clad circuit board, but other types Electric component 100 method described herein and system can be used also to be made.
During processing, coating 106 is applied to the outer surface 108 of substrate 104.Any number of coating 106 can be applied It is added to substrate 104.In an illustrated embodiment, coating 106 includes being applied to the insulating layer 110 of substrate 104 and being applied to insulation The circuit layer 112 of layer 110.LED module 102 is installed to circuit layer 112.For example, LED module 102 can be soldered to circuit layer 112.Insulating layer 110 provides the electrical isolation between circuit layer 112 and substrate 104.In the exemplary embodiment, insulating layer 110 can be high-termal conductivity, to dissipate from circuit layer 112 and the corresponding LED module 102 for being installed to circuit layer 112 Heat.
In the exemplary embodiment, the electron beam 114 that coating 106 is generated by irradiation bomb 116 is handled.Optionally, two paintings Layer 106 can be irradiated simultaneously by electron beam 114.For example, insulating layer 110 can be applied to substrate 104, then circuit layer 112 can To be applied to insulating layer 110, latter two right layer 110,112 is illuminated.Alternatively, insulating layer 110 can be applied to substrate 104, Then it is irradiated with electron beam 114.Circuit layer 112 is then applied to that treated insulating layer 110, is then irradiated with electron beam 114. Optionally, electron beam can be used in nonadiabatic electron beam treatment technique.
Fig. 1 shows the electric component 100 of different phase or state in processing.For example, at 120, electrical part The coating 106 of part 100 is illustrated at (pre-processing) state before processing.At 122, the coating of electric component 100 106 are illustrated at state in processing, and electron beam 114 is directed to coating 106 at this time.Electron beam 114 is at least partially through painting Layer 106.For example, some electron beams 114 can be directed to across insulating layer 110, and other electron beams 114 can be directed to across Circuit layer 112.Optionally, the electron beam 114 of guiding insulating layer 110 can have different from the electron beam for being oriented to circuit layer 112 Characteristic.The illuminated one or more characteristics to convert the material of these coatings 106 of coating 106.At 124, electric component 100 Coating 106 be illustrated at electron beam 114 irradiation after processing after (post-processing) state.LED module 102 are shown as being coupled to circuit layer 112 after electron beam 114 irradiates.
Substrate 104 is used to form circuit board, such as clad circuit board.Circuit layer 112, which is formed, limits circuit board electricity The conductive trace on road.Substrate 104 is metal substrate, such as aluminium radiator.
Insulating layer 110 is high-termal conductivity layer.Optionally, insulating layer 110 can be with hard anodized layer.Insulating layer 110 can lead to It crosses and ink or paste is printed on outer surface 108 and is applied.Optionally, insulating layer 110 can be applied directly to outer surface 108. Alternatively, one or more layers can be provided between substrate 104 and insulating layer 110.Insulating layer 110 is being printed on outer surface Before on 108, substrate 104 can be cleaned and deoxidation.
In the exemplary embodiment, insulating layer 110 includes metal oxide, the oxide etc. of such as aluminium, silicon, titanium, magnesium. Insulating layer 110 may include other particles, such as enamel, glass, ceramics, porcelain etc..Insulating layer 110 may include boric acid Salt, silicate, fluoride, alkali metal, lead, aluminium etc..Insulating layer may include organic material, and such as epoxy resin, glues resin With agent etc., which may include metallic or thin slice to improve the heat transfer of insulating layer 110.For example, organic Carrier can be sufficiently filled with high-termal conductivity particle, metal oxide, aluminium oxide, silica, aluminium nitride, diamond etc. Deng.The particle of various shape and size can be used.Insulating layer 110 may include bonding agent to promote (the as- under printing state Printed) adhere to, and/or including surfactant to prevent tablet bonding.Insulating layer 110 may include required solvent and/or Other additives, to adjust ink/paste viscosity needed for printing treatment.110 material of insulating layer may include metal precursor object Or the other materials that can be chemically reduced during being irradiated with electron beam 114.
In the exemplary embodiment, insulating layer 110 can be the micro-structure of micro particle and/or nanoparticle.Insulating layer 110 particle electron beam 114 is melted to generate the solution that wherein material is mixed with atomic level.Optionally, insulating layer 110 can To be quickly cooled down with rapid curing solution, to prevent from mutually separating, grain growth and/or passed to the excessive heat of metal heat sink 104 It leads.The metal heat sink for limiting substrate 104 facilitates heat of the rapid dispersion from insulating layer 110 during and after irradiation.Make Material, which well mixes and is allowed to rapid curing, produces fine material micro-structure.
Insulating layer 110 can be applied by one of various different printing technologies, such as silk-screen printing, pad printing, spray Ink print, aerosol jet printing, differential match, spin coating, wiping apply etc..In alternative embodiments, it can be used except printing Insulating layer 110 is applied to substrate 104 by other application technologies.For example, insulating layer 110 can by powder coating, spray, dip in Dipping or other processing are applied to apply.Insulating layer 110 is optionally applied to substrate 104 by the application technology, such as Along scheduled circuit trace path.The printing technology can permit the printing standardization pattern on substrate 104, and described Printing discontinuously can such as be applied with batch prints or continuously such as be printed with reel and applied to complete.The printing Technology can be selected according to the minimum compact mechanism of paste or ink, the thickness degree of application, insulating layer material composition etc..
Circuit layer 112 can be by the way that conductive or metallization ink or paste to be printed on insulating layer 110 and apply.Insulation Layer 110 is between circuit layer 112 and substrate 104, to provide electrical isolation between the two.Optionally, circuit layer 112 can be direct It is applied to insulating layer 110.Alternatively, one or more layers can be provided between insulating layer 110 and circuit layer 112.
In the exemplary embodiment, circuit layer 112 includes the metallic of various shape and size.Circuit layer 112 can be with Including bonding agent to promote printing to adhere to and/or prevent metallic from bonding (for example, 1-2wt%) including surfactant. Circuit layer 112 may include the solvent and/or other additives that printing treatment needs.Optionally, circuit layer 112 may include volume Outer solder flux additive (for example, commercially available soldering flux, borax and potassium-tetraborate), the water between all for example 1-10wt% It is flat.During the post-processing (post processing) with electron beam 114, the brazing flux can be added to adjust circuit layer 112 wetting state.In the exemplary embodiment, circuit layer 112 can have high metal concentration (for example, being greater than 50wt%). In one exemplary embodiment, metallic can be 100% silver particles.In a further exemplary embodiment, metallic Can for 100% copper particle or another high-conductivity metal.In alternative embodiments, other types of metal can be used, Such as gold, aluminium, nickel, silver, molybdenum, tin, zinc, titanium, palladium, platinum etc. and/or their alloy.112 material of circuit layer may include energy Electronation is reached into the metal precursor object of metal.It is, for example, possible to use metal salt, metal oxide and other metallic compounds, Such as silver chlorate, stannic chloride and silver nitrate.The precursor may include the metal with low melting point, such as tin, zinc, copper, silver Etc..When using the mixture of metal mixture or alloy, intermetallic knot can be formed during electron beam treatment Structure, to realize the characteristic or performance of desired coating 106.
In the exemplary embodiment, circuit layer 112 can be the micro-structure of micro particle and/or nanoparticle.Optionally, Circuit layer 112 may include the mixed powder of solid metal particles (such as Ag particle) and bonding agent, solvent and/or flux mixture End.Metallic electron beam 114 is melted to generate the solution that wherein material is mixed with atomic level.Optionally, circuit layer 112 It can be quickly cooled down with solution described in rapid curing, to prevent from mutually separating and grain growth.For example, limiting the metal of substrate 104 Radiator can be used for dissipating the heat from circuit layer 112, wherein heat also passes through high thermal conductivity insulating layer 110.Mix material well It closes and quickly solidifies, lead to fine material microstructure.It is alternatively possible to use the metallic of different sizes and shapes.It can So as to be reduced into the precursor (for example, metal salt, metal oxide) of metallic during being used in irradiation and melt processed.It is optional Ground, diffusion barrier layer can be set between insulating layer 110 and circuit layer 112, to reduce 110 material of insulating layer and circuit layer Diffusion between 112 materials.
Bonding agent concentration can lower (for example, be less than 5wt%), be such as lower compared with the concentration of metallic. Bonding agent concentration can be lower compared with routine paste used in the post-processing application of conventional oven heat.Bonding agent concentration can Between approximate 25wt% and 5wt%.Alternatively, bonding agent concentration can be very low (for example, being less than 1wt%).Bonding agent Example include dextrin, polyvinyl butyral (for example, butvar), hydroxypropylcellulose (for example,), but In alternate embodiment, other types of bonding agent can be used.Bonding agent may include glue or other additives, be applied with changing Expect viscosity consequently facilitating being applied to insulating layer 110.
Circuit layer 112 can be applied by one of various different printing technologies, such as silk-screen printing, pad printing, spray Ink print, aerosol jet printing, differential match, spin coating, wiping apply etc..In alternative embodiments, it can be used except printing Circuit layer 112 is applied to insulating layer 110 by other application technologies.For example, circuit layer 112 can by powder coating, sprinkling, Dipping dipping or other processing are to apply.Circuit layer 112 is optionally applied to insulating layer 110 by the application technology, Such as along scheduled circuit trace path.The printing technology can permit the printing standardization pattern on substrate 104, and The printing discontinuously can such as be applied with batch prints or continuously such as be printed with reel and applied to complete.It is described Printing technology can be selected according to the minimum compact mechanism of paste or ink, the thickness degree of application, coating material composition etc..
Referring again to Fig. 2, Fig. 2 shows accoding to exemplary embodiment electron beam 114 is radiated at electric component 100 On electric component formed system 140.System 140 can be the electron beam microminiature welder that can generate electron beam 114.The place Reason can execute in vacuum chamber 142.The power of irradiation bomb 116 can be controlled during processing.The energy density of electron beam 114 It during processing can be controlled.The deflection speed (deflection speed) of electronics during processing can be controlled.Most greatly Fast voltage during processing can be controlled.Maximum electron beam electric current during processing can be controlled.Act on the beam in target Focal spot size and depth can be controlled during processing.System 140 can control electron beam 114 to focus on more than one beam In focus, insulating layer 110 and circuit layer 112 are such as irradiated simultaneously.Electron beam 114 can be based on the performance (example of depositing coating 106 Such as, thickness degree, layer composition) and the material properties (for example, density, thermal conductivity, chemical composition) of coating 106 it is controlled.
System 140 can be equipped with back scattered electron and secondary electron detector, with scanning electron microscope (SEM) class Seemingly, the detector can be used to generate the electron beam image of workpiece.Described image can watch in real time on the screen, or use tricks The storage of calculation machine.System 140 may include software to control the function of irradiation bomb 116, such as program electron beam 114 with scanned Restriction path or illuminating defined pattern on sample.The software can permit the shifting synchronous with irradiating sample of electron beam 110 It is dynamic, the reel of such as continuous moving.Continuous re melting process is possible as a result,.Optionally, system 140 may include heat dissipation Device such as with high caloic (thermal mass) and is positioned to the thick aluminium sheet radiator well thermally contacted with target.
Fig. 3 shows the interaction of electron beam 114 Yu coating 106.In an illustrated embodiment, insulating layer 110 and electricity Road floor 112 prints before exposure.During irradiation, some electron beams 114 are focused on inside insulating layer 110, and some electricity Beamlet 114 focuses on inside circuit layer 112.Electron beam 114 is at least partially through respective coatings 106.In exemplary embodiment In, beam focus 150 is in insulating layer 106, and beam focus 152 is in circuit layer 112.Electron beam 114 is not to focus on substrate In 104, the heat from coating 106 but substrate dissipates.Irradiation or heating for substrate 104 is due to the focusing of electron beam 114 It is limited on coating 106.Due to the material scattering of the impacting electron coated 106 of electron beam 114, the kinetic energy of electronics is converted For thermal energy, it is burnt that the probability of scattering may rely on the energy of electronics, the density of the illuminated material of respective coatings 106, beam Point depth etc..Optionally, the penetration depth of electron beam can be between 0.5 μm and 20 μm.In the exemplary embodiment, it scatters The energy dependence of probability is characterized in that the maximum value of generated heat density is not located on the surface of the material, and is penetrating depth At about the 1/3 of degree.Heat not only generates on the surface of coating 106, but also generates in the material internal of coating 106.Electronics A part is reflected from coating 106 or is emitted again.This electronics can be used to generate SEM image in situ during irradiation, with warp Treatment with irradiation is controlled by feedback control system.
For fixed acceleration voltage, the power of generated heat depends on electron stream.Acceleration voltage and beam current multiply Product generates beam power.The power can be adjusted by control electronic current and/or acceleration voltage.It is adjustable with control described in Another parameter for the treatment of with irradiation is the irradiation duration at or near the point of coating 106.If the heat generated is more than by material Material is heated to the thermal energy of its fusing point needs and the latent heat of fusion of material, the then material molten of the coating 106 printed.Make thermal energy focus On coating 106 rather than on substrate 104, this generates heat and makes 106 Flashmelt of coating.By make material react and/or It is sintered the layer, coating 106 and/or substrate layer 104 can be heated to fusing point temperature below, to change the spy of the layer Property.Optionally, substrate 104 can act on as radiator, with the heat after illumination from coating 106 that promptly dissipates, thus Allow the high cooldown rate of melt film.Quickly heating and cooling rate can influence the characteristic of coating 106.For example, circuit layer 112 Hardness can be higher and quickly heating and cooling down, this slow heating and cooling with circuit layer 112 is on the contrary, as wherein As heat cure typical case in the oven heat being also heated except the outer-lining bottom 104 of paste.In addition, the paste in heating oven heat needs More thermal energy are wanted, because the outer-lining bottom in paste is also heated.
Because the size for the mass density that bonding agent typically has exists lower than the metallic in coating 106, bonding agent Percentage by volume in coating 106 is even higher.For example, in the typical routine wherein in oven heat in cured application Paste is the 90Ag/10Mo material with the butvar bonding agent of 23wt%, this is high bonding agent concentration and is critical Very high bonding agent concentration.The routine paste has the bonding agent volume fraction of approximation 75%.The height of conventional paste or Very high bonding agent concentration be it is required, print structure is fixed firmly on substrate, and bonding agent use it is conventional Oven heat keeps subsequent heat treatment.
In the exemplary embodiment, for being handled with electron beam 114, coating 106 does not need this high binder content, Because bonding agent is only needed the coating 106 of printing to be held in place to long enough on substrate 104, to transmit substrate 104 To electron beam 114 for irradiating.For example, binder content can be approximate 1wt%, to be significantly reduced percentage by volume. After melting, coating 106 is fine and close, and has good attachment.In the exemplary embodiment, bonding agent is directed at irradiation It is substantially completely removed during processing from coating 106, is such as realized by evaporating or by decomposing.In coating 106 Allow that bonding agent more rapidly and is more thoroughly evaporated or removed during irradiation using low bonding agent concentration.In insulating layer 110 Middle to use fewer adhesive that insulating layer 110 is made to have bigger thermal conductivity, this is desired in some embodiments, such as in gold Belong in the application of clad circuit plate.Fewer bonding agent is used to make circuit layer 112 that there is bigger electric conductivity in circuit layer 112, this It is desired in some applications.When selecting bonding agent material, the bonding agent with such characteristic is considered, such as in irradiation The high paste quality of coating 106, high printing film layer attachment, film quality are (for example, low carbon residue (is burnt after illumination afterwards Object) concentration).In the exemplary embodiment, whole or substantially all of bonding agent is irradiated by electron beam 114, and is kept Low carbon residue amount, this can be removed by scraping or another treatment process.
During processing, electron beam 114 operation can the material type based on specific coating 106 and change.For example, The operation can when using pure metal material different from the use of metal precursor object when operation.Electron beam 114 is for insulation The operation of layer 110 can be different from the operation for circuit layer 112.In the exemplary embodiment, the pure metal composition the case where Under, the post-processing and irradiation of circuit layer 112 can be controlled by adjusting energy density and time for exposure, so as to metallic burning Tying object or at least one metal ingredient becomes melting behaviors, and circuit layer 112 is molten into homogeneous metal layer.In some embodiments In, there is sintering and the processing of double ranks of subsequent melting is possible.Non-metallic components (for example, bonding agent) are isolated or steam Hair, to leave pure metal layer.In the exemplary embodiment, in the case where metal precursor object, such as in such as insulating layer 110 In metal oxide (still, these metal precursor objects may be used to form circuit layer 112 in some embodiments), insulating layer 110 post-processing and irradiation is controlled by energy density and time for exposure, so that metal precursor object is chemically reduced, this passes through defeated The heat entered into insulating layer 110 is realized indirectly, or passes through the interaction of the electronics in metal precursor object and electron beam 114 Directly realize.Metal oxide can form non-conductive but high-termal conductivity layer, this is limited for being located at by metal substrate 104 Radiator and circuit layer 112 between insulating layer 110 can be desired.Insulating layer 110 Non-metallic components (for example, it is viscous and Agent) it can be isolated or be evaporated.When precursor is by 114 chemical modification of electron beam, insulating layer 110 can be transformed into Matter layer, such as alumina layer.
The thermal energy that electron beam 114 generates inside coating 106 can be controlled by adjusting the parameter of electron beam 114.? In the case where the irradiation time of low thermal energy and length, coating 106 only partially can be melted and can be not joined to down Layer structure (underlying structure).In the case where low thermal energy and long irradiation time, the particle of coating 106 can To be only sintered, and incomplete fusion.In this case, coating 106 may not be bonded to understructure well, and It may be easy to pass by and shift at any time.In the case where low thermal energy still short irradiation, partial coating 106 can be by electricity Beamlet 114 removes, and is such as realized by leaving material splatter in irradiation.In the case where high-energy, big drop of drying It can be remained with three-dimensional island, this is undesirable.In the case where higher energy, such as when energy is excessively high, circuit layer is removed Except 112, the understructure of such as substrate 104 or insulating layer 110 etc is fusible, this provides worse electric interfaces. The energy level of electron beam 114 should the controlled melting to realize coating 106, while good covering understructure and not undermining down excessively Layer structure.
During use, the particle fusing or sputtering of coating 106 may occur under any energy level.Several physical Explain the effect of metallic blowing: a) transmitting momentum, b) electrostatic effect, c) dynamo-electric effect and d) thermomechanical effect.For Reduce particle blowing, it is possible to reduce or the amount of minimum Non-metallic components then will because the fill between particle is fewer There is conductive path " releasing " excess electron between the particle of greater number to ground.To reduce particle blowing, coating 106 or substrate Other layers can preheat so that desired beam power is lower before actually melting.For example, coating 106 can be preheating to The fusing point of coating 106 temperature below, is such as preheated in oven heat, is preheated using electron beam, or preheated in other ways.? During treatment with irradiation, coating 106 is then further heated to the temperature more than fusing point of respective coatings 106.To reduce particle spray It blows, bigger 106 material of coating of particle size can be used or the particle of irregular (aspherical) shape may be used, with The effect for reducing particle blowing, because more Mechanical Contacts between particle can be improved the power for being moved relative to each other particle, And it is likely to form more conductive paths.To reduce particle blowing, scanning or irradiation patterns can choose into be passed via heat The material for heating coating 106 indirectly is led, the heat transfer of substrate 104 is such as passed through.To reduce particle blowing, the material of coating 106 Material composition can have high metal particle density and/or low porosity, to enhance electric conductivity and thermal conductivity.
To avoid the possible charging during electron beam 114 irradiates to substrate 104, coating 106 can be grounded.To avoid It charges during electron beam 114 irradiates to the possibility of substrate 104, electron beam 114 can carry out work with low acceleration voltage, to increase Big electron emission.To avoid charging to the possibility of substrate 104 during electron beam 114 irradiates, can be used light (for example, UV or Person's laser) enhance the photoconductivity of coating 106.To avoid filling the possible of substrate 104 during electron beam 114 irradiates Electricity, coating 106 can be handled under the pressure (for example, having partial pressure of ar gas power) of increase.
In the exemplary embodiment, the amount for the control of electron beam 114, such as to the thermal energy generated by electron beam 114 Control, can change along coating 106.For example, by compared with a part of circuit layer 112 change electron beam 114 along The operation of another part of circuit layer 112 can make the characteristic variations of circuit layer 112.For example, passing through the ginseng of electron beam 114 Number variation, resistor can be integrated into electric conductor path or circuit.The assembling or installation of resistor are not needed as a result,.Separately Outside, compared with insulating layer 110, the control of electron beam 114 can be changed along circuit layer 112.
Fig. 4 shows another processing for being used to form electric component 100 (see Fig. 1).In an illustrated embodiment, insulating layer 110 and circuit layer 112 with electron beam 114 handle before deposit.114 first processing insulating layer 110 of electron beam.Then dividing ETAD expected time of arrival and departure processing circuit layer 112.Electron beam can be controlled particularly to aim at a layer as a result, and then aims at another layer, Such as using different running parameters (for example, different power levels, different rates etc.).
Fig. 5 shows another processing for being used to form electric component 100 (see Fig. 1).In an illustrated embodiment, insulating layer 110 are deposited first on substrate 104, are then irradiated with electron beam 114.Then circuit layer 112 is deposited over that treated absolutely In edge layer.Then circuit layer 112 is irradiated with electron beam 114.
Fig. 6 shows the method 200 of manufacture electric component such as clad circuit board.Method 200 includes providing 202 tools There is the substrate of outer surface.In the exemplary embodiment, substrate is metal substrate, such as the radiator for electric component Aluminium substrate.
The method 200 includes that insulating layer is applied to 204 on the outer surfaces of the substrates.The insulating layer can be paste or Person's ink.Insulating layer can be powder or can have other forms.The insulating layer may include that glass or ceramics form material Material, the glass or ceramic forming material are after the treatment by conversion glass or ceramics.Insulating layer may include precursor, all Such as metal oxide or metal salt, the precursor is processed in later step.Optionally, insulating layer may include it is viscous and Agent is to be fixed to substrate for insulating layer.Bonding agent concentration can be lower, to remove substantially the entirety of bonding agent during processing.
Insulating layer can apply 204 by the way that insulating layer to be printed on substrate.For example, insulating layer can be by screen printing Brush, pad printing, ink jet printing, aerosol jet printing.Insulating layer can be matched by differential, spin coating, wiping applies, powder applies It applies, sprinkling, dipping impregnates or other processing are to apply.Insulating layer can be applied directly to outer substrate surface.Alternatively, at it Between other layers can be set.
Method 200 includes that circuit layer is applied to 206 on the insulating layer.Circuit layer can be paste or ink.Circuit layer can By be powder or can have it is other in the form of.Circuit layer may include high metal particle concentrations.Circuit layer may include precursor Object, such as metal oxide or metal salt, the precursor are processed in later step.Optionally, circuit layer can wrap Bonding agent is included so that circuit layer is fixed to insulating layer.Bonding agent concentration can be lower, substantially the entirety of to remove during processing Bonding agent.
Circuit layer can apply 206 by the way that circuit layer to be printed on insulating layer.For example, circuit layer can be by screen printing Brush, pad printing, ink jet printing, aerosol jet printing.Circuit layer can be matched by differential, spin coating, wiping applies, powder applies It applies, sprinkling, dipping impregnates or other processing are to apply.Circuit layer can be applied directly to outer substrate surface.Alternatively, at it Between other layers can be set.
Optionally, the insulating layer and circuit layer for defining coating can be such as with other processing of electron beam treatment coating It is preheated before step.Before other processing steps, coating can be preheated to coating fusing point temperature below, other In processing step, the temperature be can be improved to temperature more than coating fusing point.
Optionally, coating can be electrically grounded before other processing steps such as with electron beam treatment coating.This connects Ground can be sputtered with reduction coating between electron beam process phase.
Method 200 includes irradiating 208 insulating layers with electron beam to convert insulating layer.Electron beam can focus in insulating layer It is interior.Insulating layer can be heated to melt insulating layer with electron beam irradiation, to form non-lead between metal substrate and circuit layer Electric but thermally conductive layer.Optionally, the irradiation 208 can occur after circuit layer is applied to insulating layer.Alternatively, described Irradiation 208 can be applied 206 to occurring before insulating layer in circuit layer.
The irradiation 208 can evaporate substantially the whole of bonding agent or nonmetallic materials in insulating layer.Insulating layer can With illuminated until fully removing the nonmetallic materials in insulating layer.The treatment with irradiation can be controlled based on insulating layer characteristic System is such as controlled by controlling the running parameter of electron beam, and all thickness in this way of the insulating layer characteristic, ingredient, bonding agent are dense Degree etc..Optionally, the different piece of insulating layer can differently be irradiated.
Method 200 includes irradiating 210 circuit layers with electron beam, to form the electric conductor of electric component.Electron beam can gather Point of the coke in circuit layer.Optionally, irradiation 210 synchronous with the irradiation of insulating layer can occur, such as by controlling irradiation bomb It is realized so that electron beam to be emitted in two coatings.Two layers can be irradiated with identical electronic beam.It can be with electron beam irradiation Heating circuit layer, to melt circuit layer to form electric conductor.Optionally, such as when metal precursor object is used in circuit layer, Metal precursor object can be with the electron interaction of electron beam with conversion circuit layer during irradiation.Electron beam can will be before metal Body object chemistry is reduced to metal, to form electric conductor.
Irradiation 210 can be left basic with the substantially all of bonding agent or nonmetallic materials in evaporation circuit layer Upper pure metal layer, to form electric conductor.Circuit layer can be illuminated, until the nonmetallic materials of circuit layer are fully removed It goes.The treatment with irradiation can based on circuit layer characteristic (such as, thickness, composition, bonding agent concentration etc.) be it is controlled, such as It is controlled by controlling the running parameter of electron beam.Optionally, the different piece of circuit layer can differently irradiate, such as Resistor is formed in electric conductor.Electric component can be structuring electric component.For example, the layer of electric component can pass through knot Structure mode is printed and is irradiated via electron beam, to obtain predetermined properties in one or more layers.Electric component can be with tegillum Pressure or printing, or planar structure is limited in some way.Electron beam can irradiate layered structure whole or selected portion Point, it then can remove excessive lamination/printing material.
The method includes circuit layer is arrived in LED module connection 212.LED module can be soldered to circuit layer.From LED The heat of module is dissipated by substrate.Insulating layer is high-termal conductivity, is passed to substrate to allow heat to pass therethrough.
Method and system as described herein with 114 processing circuit layer 110,112 of electron beam realizes on the metallic substrate High quality layered structure.Insulating layer 110 is non-conductive and high-termal conductivity, will the dissipation of heat from circuit layer to substrate In 104 radiator.The processing can not utilize wet chemistry to execute, and reduce effect on environment.With other manufacturing process It compares, it is possible to reduce for manufacturing the metal consumption of electric component.The processing realizes the highly selective and accurate cloth of coating 106 It sets.Coating 106 and electric component can be rendered adequately treated quite quickly, and can be used as continuous reel system or discontinuous batch system A part handle.Compared with standard processing, by treated, electric conductor that circuit layer 112 limits provides improved spy Property.For example, conductor can have the conductivity of raising, the thermal conductivity of raising, better wearability, better corrosion resistance, raising Hardness etc..Compared with standard processing, by treated, insulating layer that insulating layer 110 limits provides improved characteristic.Example Such as, insulating layer can have low bonding agent concentration, and the heat transfer of insulating layer can be improved in this.
It should be understood that it is described above be intended to it is illustrative, rather than it is restrictive.For example, above-described embodiment (and/or its Aspect) it can be used to be combined with each other.In addition, can carry out it is many modify so that especially situation or material are suitable for the teachings of the present invention, Without departing from the scope of the invention.The size of each component described herein, material type, the number and location purport of orientation and each component In the parameter for limiting some embodiments, but it is restrictive by no means, and be only exemplary embodiment.It is described above by reading Book, many other embodiments and modification in the spirit and scope of claims will be for those of ordinary skill in the art Significantly.

Claims (10)

1. a kind of method for manufacturing electric component, which comprises
Substrate is provided;
Insulating layer is applied over the substrate;
Circuit layer is applied on the insulating layer;
The insulating layer is irradiated with electron beam to convert the insulating layer;And
With the electron beam irradiation circuit layer to convert the circuit layer,
Wherein, the irradiation insulating layer and the irradiation circuit layer occur simultaneously, and some Electron Beam Focusings are insulating Layer is internal, and other Electron Beam Focusings are inside circuit layer, and some electron beams and other described electron beams have not Same beam characteristics;
Wherein, the irradiation circuit layer includes heating a part of the circuit layer to melt the circuit layer to be formed Electric conductor, and another part of heating circuit layer is to forming resistor, and wherein, by institute during the treatment with irradiation State circuit layer electrical ground.
2. according to the method described in claim 1, wherein, the substrate that provides includes providing the metal substrate of high-termal conductivity, institute It states insulating layer and electrical isolation between the circuit layer and the substrate is provided.
3. according to the method described in claim 1, further comprising: before irradiating the circuit layer, the circuit layer is pre- It is heated to its fusing point temperature below, the irradiation circuit layer includes that the circuit layer is heated to melting for the circuit layer Or more temperature.
4. according to the method described in claim 1, wherein, the application circuit layer includes applying to have bonding agent concentration and metal The combined circuit layer of concentration, the irradiation circuit layer includes evaporating the substantially all bonding agent, is left substantially Metal layer is to form the electric conductor.
5. according to the method described in claim 1, wherein, applying insulating layer includes applying to have glass or ceramic forming material Insulating layer, the irradiation insulating layer includes irradiating the insulating layer with by the glass or ceramic forming material conversion As glass or ceramics.
6. according to the method described in claim 1, wherein, the application insulating layer includes that the insulating layer is directly printed on institute It states on the outer surface of substrate, wherein the application circuit layer includes that the circuit layer is directly printed on the insulating layer.
7. according to the method described in claim 1, further comprising: light-emitting diode (LED) module is connected to the circuit layer.
8. a kind of electric component, comprising:
Substrate with outer surface;
It is applied selectively to the insulating layer of the outer surface, the insulating layer conformation is in the preceding state of processing and in electricity consumption After beamlet irradiation after processing state, the insulating layer from state after state transformation to the processing before the processing, Middle electron beam at least partially penetrates into the insulating layer during treatment with irradiation to convert the insulating layer;With
It is applied selectively to the circuit layer of the insulating layer, the circuit layer is configured in the preceding state of processing and in electricity consumption After beamlet irradiation after processing state, the circuit layer from state after state transformation to the processing before the processing, Middle electron beam at least partially penetrates into the circuit layer during treatment with irradiation to convert the circuit layer;
Wherein, the electron beam simultaneously irradiate the insulating layer and the circuit layer, some Electron Beam Focusings inside insulating layer, And other Electron Beam Focusings are inside circuit layer, some electron beams and other described electron beams have different electronics Beam characteristic;
Wherein, the irradiation circuit layer includes heating a part of the circuit layer to melt the circuit layer to be formed Electric conductor, and another part of heating circuit layer is to forming resistor, and wherein, by institute during the treatment with irradiation State circuit layer electrical ground.
9. electric component according to claim 8, wherein the substrate is manufactured with metal material, and the insulating layer provides The circuit layer is electrically insulated with the substrate.
10. electric component according to claim 8, wherein the content of the nonmetallic materials of the circuit layer is at the place State is higher than state after the treatment before managing, and the nonmetallic materials are removed during through the treatment with irradiation of the electron beam It goes.
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013217068A1 (en) * 2013-08-27 2015-03-19 Tyco Electronics Amp Gmbh Electron-beam assisted production of electrical components
DE102015210460B4 (en) * 2015-06-08 2021-10-07 Te Connectivity Germany Gmbh Method for changing mechanical and / or electrical properties of at least one area of an electrical contact element
US20170100916A1 (en) * 2015-10-12 2017-04-13 Tyco Electronics Corporation Electronic Component and Process of Producing Electronic Component
CN108031836B (en) * 2018-01-22 2019-12-03 北京大学 A kind of preparation method of metal-metallic oxide nanocomposite
TWI662872B (en) * 2018-01-26 2019-06-11 謝孟修 Ceramic printed circuit board and method of making the same
EP4142975A4 (en) * 2020-04-30 2024-01-31 Hitachi Energy Ltd Method and system for additive manufacturing of electrical devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002504751A (en) * 1998-02-24 2002-02-12 アライドシグナル・インコーポレイテッド Low dielectric constant film with high glass transition temperature prepared by electron beam curing
CN1404612A (en) * 2000-02-21 2003-03-19 东洋油墨制造株式会社 Active energy beam curing type conductive paste, production method and device for conductor circuit substrate and non-contact ID and production method thereof
CN101894762A (en) * 2010-06-12 2010-11-24 深圳大学 Metal heat-conducting substrate and manufacturing method thereof
CN102326460A (en) * 2009-02-20 2012-01-18 大日本印刷株式会社 Conductive substrate
CN102667962A (en) * 2010-01-21 2012-09-12 株式会社藤仓 Electroconductive paste for electron beam curing and circuit board production method using same

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5990990A (en) * 1982-11-16 1984-05-25 株式会社東芝 Method of producing metal core circuit board
JPS59184586A (en) * 1983-04-01 1984-10-19 住友電気工業株式会社 Circuit board for placing semiconductor element
JPS60250686A (en) * 1984-05-25 1985-12-11 日本碍子株式会社 Methd of producing ceramic circuit board
US4661214A (en) * 1985-12-11 1987-04-28 Optical Materials, Inc. Method and apparatus for electrically disconnecting conductors
DE3625087A1 (en) * 1986-07-24 1988-01-28 Ego Elektro Blanc & Fischer ELECTRIC COMPONENT
JPH0793500B2 (en) * 1986-10-23 1995-10-09 松下電器産業株式会社 Method of manufacturing conductive circuit
US4704304A (en) * 1986-10-27 1987-11-03 International Business Machines Corporation Method for repair of opens in thin film lines on a substrate
FR2618606B1 (en) * 1987-07-24 1990-02-16 Thomson Composants Militaires INTEGRATED CIRCUIT CHIP WELDING OVEN
JPS6484792A (en) * 1987-09-28 1989-03-30 Mitsubishi Electric Corp Manufacture of ceramic multilayer substrate
JPH01194492A (en) * 1988-01-29 1989-08-04 Shinko Electric Ind Co Ltd Manufacture of glass-glazed substrate
JPH0251297A (en) * 1988-08-12 1990-02-21 Toyo Ink Mfg Co Ltd Manufacture of printed wiring board
JPH02125728A (en) * 1988-11-03 1990-05-14 Shinko Electric Ind Co Ltd Composite base and its manufacture
US4970365A (en) * 1989-09-28 1990-11-13 International Business Machines Corporation Method and apparatus for bonding components leads to pads located on a non-rigid substrate
EP0434135B1 (en) * 1989-12-20 1994-06-01 Koninklijke Philips Electronics N.V. Method of positioning and soldering of SMD components
JPH0429338A (en) * 1990-05-24 1992-01-31 Nippon Mektron Ltd Method circuit board for mounting ic and its mounting
JPH04186696A (en) * 1990-11-16 1992-07-03 Mitsubishi Electric Corp Bonding device
JPH0570605A (en) * 1991-09-12 1993-03-23 Asahi Chem Ind Co Ltd Method for curing paste
JPH05110219A (en) * 1991-10-17 1993-04-30 Mitsubishi Electric Corp Printed wiring board
US5403671A (en) * 1992-05-12 1995-04-04 Mask Technology, Inc. Product for surface mount solder joints
US5289632A (en) * 1992-11-25 1994-03-01 International Business Machines Corporation Applying conductive lines to integrated circuits
JP3453803B2 (en) * 1993-06-15 2003-10-06 株式会社日立製作所 Electronic circuit board wiring correction method and apparatus
US5370766A (en) * 1993-08-16 1994-12-06 California Micro Devices Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices
JPH07162116A (en) * 1993-12-01 1995-06-23 Toagosei Co Ltd Metallic base material and its production
JP3587884B2 (en) * 1994-07-21 2004-11-10 富士通株式会社 Method for manufacturing multilayer circuit board
JP3285294B2 (en) * 1995-08-08 2002-05-27 太陽誘電株式会社 Circuit module manufacturing method
EP0968537B1 (en) * 1997-08-22 2012-05-02 Creator Technology B.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
TWI233763B (en) * 1999-12-17 2005-06-01 Matsushita Electric Ind Co Ltd Method of manufacturing a circuit board
JP3590319B2 (en) * 2000-03-10 2004-11-17 株式会社ジャパンユニックス Gas injection type soldering method and apparatus
GB2365007B (en) * 2000-07-21 2002-06-26 Murata Manufacturing Co Insulative ceramic compact
US8065795B2 (en) * 2001-03-08 2011-11-29 Ppg Industries Ohio, Inc Multi-layer circuit assembly and process for preparing the same
JP3864413B2 (en) * 2002-04-22 2006-12-27 セイコーエプソン株式会社 Method for manufacturing transistor
WO2004064018A1 (en) * 2003-01-15 2004-07-29 Semiconductor Energy Laboratory Co., Ltd. Separating method and method for manufacturing display device using the separating method
US7528421B2 (en) * 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US6992001B1 (en) * 2003-05-08 2006-01-31 Kulicke And Soffa Industries, Inc. Screen print under-bump metalization (UBM) to produce low cost flip chip substrate
JP2005032946A (en) * 2003-07-11 2005-02-03 Ricoh Co Ltd Method for forming wiring member
TWI336921B (en) * 2003-07-18 2011-02-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP2005085799A (en) * 2003-09-04 2005-03-31 Seiko Epson Corp Film depositing method, method of forming circuit pattern, method of manufacturing semiconductor device, electrooptical device, and electronic apparatus
EP1528594B1 (en) * 2003-10-28 2019-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7230318B2 (en) * 2003-12-24 2007-06-12 Agency For Science, Technology And Research RF and MMIC stackable micro-modules
EP1724789B1 (en) * 2004-03-10 2010-12-22 Asahi Glass Company, Limited Metal-containing fine particle, liquid dispersion of metal-containing fine particle, and conductive metal-containing material
US7223641B2 (en) * 2004-03-26 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, liquid crystal television and EL television
US7494923B2 (en) * 2004-06-14 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of wiring substrate and semiconductor device
US20100003522A1 (en) * 2004-07-01 2010-01-07 Qiping Zhong Dry powder coating of metals, oxides and hydroxides thereof
JP3874003B2 (en) * 2004-10-27 2007-01-31 セイコーエプソン株式会社 Wiring pattern forming method and film pattern forming method
JP2006173282A (en) * 2004-12-14 2006-06-29 Denso Corp Method and device for soldering electronic part
US7569331B2 (en) * 2005-06-01 2009-08-04 Hewlett-Packard Development Company, L.P. Conductive patterning
US8269227B2 (en) * 2005-06-09 2012-09-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
JP2007027409A (en) * 2005-07-15 2007-02-01 Daiken Kagaku Kogyo Kk Conductor pattern forming method
TWI279008B (en) * 2005-12-26 2007-04-11 Ind Tech Res Inst Thin film transistor, device electrode thereof and method of forming the same
JP4880358B2 (en) * 2006-05-23 2012-02-22 株式会社光波 Light source substrate and illumination device using the same
US20070281099A1 (en) * 2006-05-31 2007-12-06 Cabot Corporation Solderable pads utilizing nickel and silver nanoparticle ink jet inks
JP2008006623A (en) * 2006-06-27 2008-01-17 Brother Ind Ltd Manufacturing method of recorder
JP5101169B2 (en) * 2007-05-30 2012-12-19 新光電気工業株式会社 Wiring board and manufacturing method thereof
US8130499B2 (en) * 2007-11-30 2012-03-06 Panasonic Corporation Heat dissipating structure base board, module using heat dissipating structure base board, and method for manufacturing heat dissipating structure base board
FI121592B (en) * 2008-03-26 2011-01-31 Tecnomar Oy Process for making PCB laminates, especially RFID antenna laminates and PCB laminates
KR20110025914A (en) * 2008-07-04 2011-03-14 도다 고교 가부시끼가이샤 Transparent electrically conductive transfer plate and production method therefor, transparent electrically conductive base, method for producing transparent electrically conductive base using transparent electrically conductive transfer plate, and molded article using transparent electrically conductive base
WO2010036235A1 (en) * 2008-09-23 2010-04-01 Hewlett-Packard Development Company, L.P. Removing piezoelectric material using electromagnetic radiation
US8367516B2 (en) * 2009-01-14 2013-02-05 Taiwan Semiconductor Manufacturing Company, Ltd. Laser bonding for stacking semiconductor substrates
US20120225411A1 (en) * 2009-01-21 2012-09-06 Melinda Kathryn Puente Connector Assemblage Formational for a Dermal Communication
JP5238598B2 (en) * 2009-04-30 2013-07-17 昭和電工株式会社 Circuit board manufacturing method
KR101470524B1 (en) * 2009-06-30 2014-12-08 한화케미칼 주식회사 Blending improvement carbon-composite having Carbon-nanotube and its continuous manufacturing method
KR20120026813A (en) * 2010-09-10 2012-03-20 삼성전기주식회사 Method for forming electrode structure and method for manufaturing the solar cell battery with the same, and solar cell battery manufactured by the method for manufaturing the solar cell battery
JP2012089718A (en) * 2010-10-21 2012-05-10 Mitsubishi Paper Mills Ltd Method of producing conductive material and conductive material
KR20140009379A (en) * 2011-02-25 2014-01-22 도쿄엘렉트론가부시키가이샤 Film forming method and film forming device
US9646829B2 (en) * 2011-03-04 2017-05-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
DE102011006899A1 (en) * 2011-04-06 2012-10-11 Tyco Electronics Amp Gmbh Process for the production of contact elements by mechanical application of material layer with high resolution and contact element
TWI441940B (en) * 2011-06-09 2014-06-21 Shih Hua Technology Ltd Method for making pattern conductive element
TWI557855B (en) * 2011-12-30 2016-11-11 旭德科技股份有限公司 Package carrier and manufacturing method thereof
CN103359722B (en) * 2012-04-05 2015-01-21 清华大学 Preparation method of narrow graphene nanoribbons
CN103359717B (en) * 2012-04-05 2015-06-03 清华大学 Preparation method of narrow graphene nanoribbons

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002504751A (en) * 1998-02-24 2002-02-12 アライドシグナル・インコーポレイテッド Low dielectric constant film with high glass transition temperature prepared by electron beam curing
CN1404612A (en) * 2000-02-21 2003-03-19 东洋油墨制造株式会社 Active energy beam curing type conductive paste, production method and device for conductor circuit substrate and non-contact ID and production method thereof
CN102326460A (en) * 2009-02-20 2012-01-18 大日本印刷株式会社 Conductive substrate
CN102667962A (en) * 2010-01-21 2012-09-12 株式会社藤仓 Electroconductive paste for electron beam curing and circuit board production method using same
CN101894762A (en) * 2010-06-12 2010-11-24 深圳大学 Metal heat-conducting substrate and manufacturing method thereof

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