KR20180105843A - Manufacturing method of nail cleaner buffer having irregular pattern - Google Patents

Abstract

A buffer for nail cleaning according to the present invention etches a glass substrate to be a base of the buffer by using a photomask having an irregular pattern to form the irregular pattern, thereby having a shape in which a rough cutting edge and a fine cutting edge are mixed on a surface. Therefore, the rough cutting edge and the fine cutting edge simultaneously polish the irregular surface of nail, thereby more uniformly polishing the nail than a conventional buffer. Also, the present invention does not need to alternately use the buffer having a large irregular pattern and the buffer having a small irregular pattern, thereby being simple to use and maximizing satisfaction of a user. A manufacturing method of a buffer for nail cleaning having an irregular pattern comprises: a step (A) of forming a chrome coating layer on one surface of the glass substrate; a step (B) of applying an ultraviolet curing agent on the chrome coating layer; a step (C) of laminating the photomask having the irregular pattern on the ultraviolet curing agent; a step (D) of irradiating an ultraviolet ray on the substrate of the step (C), and curing the ultraviolet curing agent; a step (E) of removing the photomask and the uncured ultraviolet curing agent from the glass substrate; a step (F) of corroding the substrate of the step (E); and a step (G) of removing the remaining ultraviolet curing agent.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nail cleaner buffer having irregular patterns,

The present invention relates to a method for manufacturing a buffer for nail cleansing having irregular patterns, and more particularly, to a method for manufacturing a buffer for nail cleansing which can easily achieve gloss after nail cleansing while ensuring durability.

A nail trimmer (nail trimmer) is a kind of beauty tool that cleans nails and polishes the surface of nails. It is also called a buffer, A nail file having a structure in which a joint is formed on the surface of a body of a metal material so that the nail can be polished beautifully; A nail buffer having a structure shown in FIG.

Conventionally, in order to manufacture such a nail polish tool, a polishing layer is formed by attaching stone powder or the like to the surface of the support layer, or a polishing layer having roughness is formed by applying an ultraviolet adhesive or the like to manufacture a nail polish tool .

For example, in Korean Patent No. 10-1043651, an adhesive is applied to a plate (support layer) to adhere a buffer material and a fabric, and a mixture of stone powder, water, an adhesive and a foaming agent is applied to the upper surface of the fabric to prepare a nail care tool And discloses a technical content of the method.

However, since the nail polish manufactured by the method described above is coated with the stone powder on the surface of the support layer, the nail polish is manufactured, and the stone powder coated by the friction with the nail is frequently used to cause durability problems have.

Korean Patent Registration No. 10-0723456 discloses a method of forming a pattern by laminating a UV adhesive on a plate-shaped glass surface and laminating a printing film on which an intended pattern is arranged on an adhesive, curing the adhesive, and corroding the glass .

However, in the above method, since the UV adhesive is processed by a masking process and the polishing part is formed through a process such as substrate strengthening, the manufacturing process is complicated and the polishing part has the same pattern. Therefore, So that it is difficult to achieve uniform gloss.

Korean Patent No. 10-1043651 (Mar. 09, 2010) Korean Patent No. 10-0723456 (May 31, 2007)

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems described above, and it is an object of the present invention to provide a buffer for a nail, It is an object of the present invention to provide a method of manufacturing a buffer for nail cleansing having an irregular pattern with excellent polishing efficiency.

The present invention relates to a method of manufacturing a buffer for nail cleansing having irregular patterns.

According to an aspect of the present invention,

A) forming a chromium coating layer on one side of a glass substrate;

B) applying an ultraviolet curing agent to the chromium coating layer;

C) laminating a photomask having an irregular pattern on the ultraviolet curing agent;

D) curing the ultraviolet curing agent by irradiating the substrate with ultraviolet rays;

E) removing the photomask and uncured UV curing agent from the glass substrate;

F) etching the E) substrate; And

G) removing the remaining ultraviolet curing agent;

The present invention also relates to a method for manufacturing a buffer for nail cleansing having an irregular pattern.

In the present invention,

a1) preparing a master batch for a base resin comprising inorganic particles;

b1) mixing the master batch and the base resin and then heating to produce a casting liquid;

c1) coating the casting liquid to form a film, and curing the film to produce a photomask intermediate film; And

d1) stretching the photomask intermediate film;

, ≪ / RTI >

a2) preparing a master batch for a base resin comprising inorganic particles;

b2) mixing the master batch and the base resin, and then heating to prepare a spinning liquid; And

c2) preparing a photomask by spin coating the spinning solution with a collector to form a film in the form of a nonwoven fabric, and then curing the spinning solution;

. ≪ / RTI >

In the present invention, the inorganic particles may have an average particle diameter of 10 nm to 100 m, and in the step c1), the casting liquid may be coated to a thickness of 1 to 200 m.

Also, the d1) may be biaxially stretched at 2 to 5 times, and the air supply rate at the time of c2) may be 10 to 100 m / s.

In the present invention, the spinning speed of the collector may be 10 to 200 mm / s and the moving speed may be 10 to 500 mm / s in manufacturing the photomask, and the fineness of the spinning fiber in the step c2) may be 30 to 100 denier Wherein the buffer layer is formed by a method comprising the steps of:

In the present invention, the inorganic particles may be any one or two or more selected from titanium oxide, magnesium silicate, magnesium oxide, and kaolin.

Another aspect of the present invention is a buffer for nail peeling having an irregular pattern prepared from the above production method, wherein the buffer has a first polishing portion having a plurality of concavities and convexities with an average diameter of 1 to 10 mu m on its surface, a first polishing portion having an average diameter of 10 to 50 mu m A second polishing portion having a plurality of concavities and convexities, and a third polishing portion having a plurality of concavities and convexities having an average diameter of 50 to 100 占 퐉.

The buffer for cleaning a nail according to the present invention is characterized in that the glass substrate serving as the base of the buffer is etched by using a photomask having irregular patterns to form irregular patterns so that a rough cutting edge and a fine cutting edge are mixed on the surface And the like. Therefore, since the irregular surface of the nail is polished simultaneously with the rough cutting edge and the fine cutting edge, it is possible to polish more uniformly than the conventional buffer, and it is unnecessary to alternately use the buffer having the large irregular pattern and the buffer having the small irregular pattern It is easy to use and can maximize user satisfaction.

Hereinafter, a method for manufacturing a buffer for nail cleansing having irregular patterns according to the present invention will be described in detail with reference to specific examples. The following specific embodiments are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention.

Therefore, the present invention is not limited to the embodiments shown below, but may be embodied in other forms. The embodiments shown below are only for clarifying the spirit of the present invention, and the present invention is not limited thereto.

Here, unless otherwise defined, technical terms and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. In the following description, the gist of the present invention is unnecessarily blurred And a description of the known function and configuration will be omitted.

In addition, the following drawings are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the following drawings, but may be embodied in other forms, and the drawings presented below may be exaggerated in order to clarify the spirit of the present invention. Also, throughout the specification, like reference numerals designate like elements.

Also, the singular forms as used in the specification and the appended claims are intended to include the plural forms as well, unless the context clearly indicates otherwise.

In describing the components of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected to or connected to the other component, It should be understood that an element may be "connected," "coupled," or "connected."

According to the present invention, there is provided a method of manufacturing a buffer for cleaning a nail having irregular patterns,

A) forming a chromium coating layer on one side of a glass substrate;

B) applying an ultraviolet curing agent to the chromium coating layer;

C) laminating a photomask having an irregular pattern on the ultraviolet curing agent;

D) curing the ultraviolet curing agent by irradiating the substrate with ultraviolet rays;

E) removing the photomask and uncured UV curing agent from the glass substrate;

F) etching the E) substrate; And

G) removing the remaining ultraviolet curing agent;

. ≪ / RTI >

In the present invention, the step A) is a step of forming a chromium coating layer on one side of the glass substrate. In this step, by forming a chromium coating layer, the adhesion of the glass substrate is improved so that the etching resist pattern layer, .

In this step, in order to form a chromium coating layer, the glass substrate may be washed to remove impurities remaining on the glass substrate, and then the chromium coating layer may be formed. The chromium coating layer may be formed by a conventional method such as ion sputtering or screen printing A hard chromium plating solution can be formed by coating one surface of the glass substrate.

Next, as in step B), an ultraviolet curing agent is applied to the upper surface of the chromium coating layer to perform a pretreatment for pattern formation.

The ultraviolet curing agent is cured as it is exposed to ultraviolet rays. As a result, a portion exposed by a photomask having irregular patterns, which will be described later, is naturally divided into portions that are not exposed, and a portion not exposed is hardened by ultraviolet rays The irregular pattern can be naturally transferred to the surface of the chromium coating layer.

As described above, since the pattern is naturally transferred by the photomask having irregular patterns, it is not necessary to coat the pattern with a plurality of compartments or patterns as in the conventional manufacturing method, and the nail purging It is possible to manufacture a buffer for preventing nail damage due to excessive cutting, and the gloss can be easily formed.

The ultraviolet curing agent is prepared by mixing a composition containing an ultraviolet curing type polymer, an unsaturated compound and a photoinitiator, which is cured by a photoinitiator upon irradiation with ultraviolet light, into a solvent. The ultraviolet curing agent is coated on the upper surface of the glass substrate by a method such as screen printing Whereby an etching resist pattern layer can be formed. In particular, the etching resist pattern layer can be formed using an ultraviolet printing apparatus having a resolution of 1080 dpi or more.

In the present invention, the ultraviolet curing type polymer generally refers to a resin that undergoes a curing reaction with a photoinitiator as it is exposed to ultraviolet rays. In order to selectively etch a glass substrate, a certain portion must be present on the substrate, .

In addition, the ultraviolet curable polymer should have at least one functional group since it must be cured rapidly upon exposure to ultraviolet rays. Depending on the molecular weight, monomers, oligomers, polymers, and mixed forms thereof may be used. Alicyclic, heterocyclic, and mixed structures thereof are also possible.

Examples of the ultraviolet curable polymer in the present invention include polyester (meth) acrylate resin, polyurethane (meth) acrylate resin, epoxy (meth) acrylate resin, polyol polyadamethacrylate resin, polybutadiene (Meth) acrylate resins, melamine (meth) acrylate resins, silicone (meth) acrylate resins and cyano (meth) acrylate resins. These may be used singly or in combination of two or more.

Examples of the photoinitiator include 2,4-trichloromethyl- (4'-methoxyphenyl) -6-triazine, 2,4-trichloromethyl- (4'-methoxystyryl) Triazine, 2,4-trichloromethyl- (3 ', 4'-dimethoxyphenyl) -6-triazine, 3-4- [ Triazine compounds such as 2,4-bis (trichloromethyl) -s-triazin-6-yl] phenylthiopropanoic acid; Bis (2-chlorophenyl) -4,4 ', 5,5'-tetraphenylbiimidazole, 2,2'-bis (2,3- , 5'-tetraphenylbiimidazole; Methyl-1-phenylpropan-1-one, 1- (4-isopropylphenyl) -2-hydroxy- (4-methylthiophenyl) -2-morpholinocarboxylate, 2-methoxy-2-phenylacetophenone, (Irgacure-907), 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) 369); O-acyloxime compounds such as Irgacure OXE 01 and Irgacure OXE 02 from Ciba Geigy; Benzophenone compounds such as 4,4'-bis (dimethylamino) benzophenone and 4,4'-bis (diethylamino) benzophenone; Thioxanthone compounds such as 2,4-diethylthioxanthone, 2-chlorothioxanthone, isopropylthioxanthone and diisopropylthioxanthone; 2,4,6-trimethylbenzoyldiphenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide, bis (2,6-dichlorobenzoyl) propylphosphine oxide Phosphine oxide-based compounds; (Diethylamino) coumarin, 3- (2-benzothiazolyl) -7- (diethylamino) coumarin, 3-benzoyl- Benzoyl-7-methoxy-coumarin, 10,10'-carbonylbis [1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H, 11H- -Benzopyrano [6,7,8-ij] -quinolizine-11-one, etc. These compounds may be used singly or in combination of two or more.

The unsaturated compound may be at least one selected from the group consisting of allyl glycidyl ether, glycidyl (meth) acrylate, 3,4-epoxycyclohexylmethyl (meth) acrylate, glycidyl 5-norbornene- 2-methyl-2-carboxylate (endo, exo mixture), 1,2-epoxy-5-hexene, 1,2-epoxy-9-decene, etc., More than two species can be used.

Examples of the solvent include alcohols such as methanol and ethanol, and organic solvents such as methyl isobutyl ketone, cyclohexanone, methylcellosolve, and tetrahydrofuran.

The ultraviolet curing agent is prepared by mixing 10 to 100 parts by weight of the unsaturated compound, 1 to 10 parts by weight of the photoinitiator and 100 to 200 parts by weight of the solvent, based on 100 parts by weight of the ultraviolet curable polymer so as to have sufficient adhesion with the chromium coating layer .

The ultraviolet curing agent may further include a hydrophobic substance to prevent penetration of the etching solution, or may further include an anti-drying agent to maintain the viscosity.

Next, a photomask having an irregular pattern is laminated on the ultraviolet curing agent. The photomask is used for selectively etching a glass substrate by dividing the ultraviolet curing agent into a cured portion and a non-cured portion. In order to form an irregular pattern, the photomask is prepared by: (1) , And (2) melt spinning the spinning solution to produce a nonwoven fabric, a photomask having pores of various sizes and shapes can be manufactured.

A method of manufacturing a photomask by stretching a film is as follows.

a1) preparing a master batch for a base resin comprising inorganic particles;

b1) mixing the master batch and the base resin and then heating to produce a casting liquid;

c1) coating the casting liquid to form a film, and curing the film to produce a photomask intermediate film; And

d1) stretching the photomask intermediate film;

. ≪ / RTI >

The masterbatch may be a pellet-shaped raw material for uniformly mixing the base resin and the inorganic particles constituting the base material of the photomask, and may be formed by mixing inorganic particles based on a general polyester resin or a thermosetting resin.

Examples of the polyester resin include polyethylene terephthalate (PET) resin, polyethylene naphthalate (PEN) resin, or a blending resin thereof, and an acid component containing an aromatic dicarboxylic acid as a main component and a glycol component containing an alkylene glycol as a main component And they can be produced by polycondensation by a conventional method. Wherein the aromatic dicarboxylic acid is selected from the group consisting of terephthalic acid, terephthalic acid, isophthalic acid, dimethyl-2,5-naphthalenedicarboxylic acid, naphthalene dicarboxylic acid, cyclohexanedicarboxylic acid, diphenoxyethane dicarboxylic acid, diphenyldicarboxylic acid, diphenyl ether dicarboxylic acid, Anthracene dicarboxylic acid,?,? - bis (2-chlorophenoxy) ethane-4,4-dicarboxylic acid, and mixtures thereof. Examples of the alkylene glycol include ethylene glycol, trimethylene glycol, tetramethylene glycol, pentamethylene glycol, hexamethylene glycol, hexylene glycol, and mixtures thereof.

The thermosetting resin preferably includes a polyurethane-based thermosetting resin. Specifically, for example, the thermosetting polyurethane may include polycarbonate polyurethane, polyester polyurethane, polyurethane, and the like.

The inorganic particles are used to prevent the ultraviolet rays from passing through the photomask, and serve as foreign substances when stretched to form pores in the photomask.

Examples of the inorganic particles include at least one selected from titanium oxide, magnesium silicate, magnesium oxide and kaolin, and it is preferable to use titanium oxide.

In order to control the size of the pores formed in the photomask, the inorganic particles are preferably mixed with two or more kinds of inorganic particles having different particle sizes.

More specifically, it is preferable that the inorganic particles have an average particle diameter of 10 to 500 nm and an average particle diameter of 5 to 100 μm. The inorganic particles having an average particle diameter of 10 to 500 nm are mixed with the base resin and serve to block ultraviolet rays. The inorganic particles having an average particle diameter of 5 to 100 탆 are large in particle size and act as impurities in the resin Thereby forming pores in the photomask film.

It is preferable that the inorganic particles are mixed with 50 to 90% by weight of inorganic particles having an average particle diameter of 10 to 500 nm and 10 to 50% by weight of inorganic particles having an average particle diameter of 5 to 100 탆, 50 to 300 parts by weight per 100 parts by weight is preferable because it can exhibit smooth pore formation and ultraviolet shielding effect.

If necessary, the inorganic particles may be further subjected to primary dispersion with one or two or more resins selected from polyvinyl chloride, polyvinyl chloride polyvinyl acetate copolymer, and thermosetting polyurethane to further improve the dispersibility in the base resin. As the surface treatment method, ultraviolet shielding particles may be added to a resin such as polyvinyl chloride, and primary dispersion may be performed by a method such as kneading and mixing. The kneading comprises a solvent, and the kneaded solution can add additional milling and filtering processes for optimization of the dispersion.

Next, the master batch and the base resin are mixed and then heated to prepare a casting liquid.

The base resin may be the same as or different from the polyester resin or the thermosetting resin included in the master batch, which is the base resin of the photomask.

In the step b1), 1 to 10 parts by weight of the masterbatch is preferably mixed with 100 parts by weight of the base resin. When it is added in an amount of less than 1 part by weight, the ultraviolet ray shielding effect can not be exhibited. If it is added in an amount exceeding 10 parts by weight, the photomask may be broken during stretching.

In the step b1), the inorganic particles may be uniformly mixed by heating to a temperature equal to or higher than the melting point of the base resin. In this case, the heating conditions are not limited to the present invention, and the conditions may be freely changed depending on the physical properties of the base resin and the manufacturing process.

Further, polymer resin particles may be additionally added to the base resin and the master batch of step b1) to help form the inner pores.

The polymeric resin particles are crosslinked to improve heat resistance. When the non-crosslinked general polymer resin particles are added during the film extrusion process, the polymer resin can not keep the extrusion temperature of the film, and the dispersed phase is not uniform in size, resulting in a low reflectance. On the other hand, when the cross-linked polymer resin particles are used, the cross-linked polymer resin particles can endure the extrusion temperature of the film, so that it does not become a problem in heat resistance and the size of the dispersed phase can be kept uniform.

The crosslinked polymeric resin particles exhibit no glass transition temperature (Tg). For example, when a DSC is measured for a general PMMA resin, the Tg is measured to be about 95 to 100 ° C., whereas the crosslinked PMMA particles The Tg does not appear even when the DSC is measured.

The polymeric resin particles are used in a state of being incompatible with the resin constituting the film. Preferably, the polymeric resin particles have an incompatibility having a mixing enthalpy of 0.2 (MJm ^-3 ) ^1/2 or more with the base resin.

The average particle size of the polymeric resin particles is preferably 0.1 to 100 탆 in terms of D50. If the average particle size is less than 0.1 탆, there may be problems such as dispersion of particles and workability in a compounding process, There may be a problem in the processability of the stretching. More preferably, the average particle diameter is 5 to 50 占 퐉. Particularly, monodisperse particles having uniform particle diameters are preferable. For example, the particle diameter dispersion degree is preferably 0.7 to 0.8.

The polymeric resin particles are preferably added in an amount of 1 to 10 parts by weight based on 100 parts by weight of the entire base resin. When the amount is less than 1 part by weight, the effect of addition is insufficient. When the amount is more than 10 parts by weight, film formation may not proceed properly or the film may be broken during stretching.

In addition to the above polymer resin particles, various organic materials capable of absorbing ultraviolet rays may be further added within the range not impairing the physical properties of the photomask. Examples thereof include visible light dyes, ultraviolet dyes, infrared dyes, A pigment, a metal, a metal compound, a metal film, a carbon black, a metal oxide, a metal sulfide, a pigment, an organic pigment, an inorganic pigment, a metal, a metal compound, a metal film, a cyanide iron pigment, a phthalocyanine pigment, Dyes, cyanine pigments, cyanine dyes, metal dithiolene pigments, and metal dithiolene dyes. These materials do not limit the conditions such as the amount of addition and the average particle size within the scope of achieving the object of the present invention.

When the casting solution is prepared as described above, it is coated on a substrate to form a film, followed by curing to form a photomask intermediate film. In this case, the curing conditions may be different depending on the type of the base resin. For example, when the base resin is a thermosetting resin, crosslinking between the polymers may be induced and cured through a suitable heat treatment in the drying process. Since the curing conditions vary depending on the type of the base resin, the curing conditions according to the base resin can be freely adjusted and selected, and the present invention is not limited thereto.

In step c1), the coating thickness of the casting liquid is preferably 1 to 200 mu m, more preferably 50 to 100 mu m. When the intermediate film is applied at a thickness of less than 1 탆, the film may be broken at the time of stretching the intermediate film. When the film is applied at a thickness exceeding 200 탆, the pores are not properly formed and irregular pattern formation does not occur properly.

Next, the cured intermediate film is biaxially stretched to complete a photomask having irregular patterns. At this time, the stretching ratio is preferably 2 to 5 times, and more preferably 3 to 4 times, in the longitudinal direction and the transverse direction, respectively, because irregular pore formation can proceed while preventing breakage of the film.

In order to efficiently form the pores during the stretching in the step d1) and to improve the thickness and the stability of the stretching process, it is preferable to perform the multi-stage stretching more than twice, for example, 2 to 4 times in the longitudinal direction and the transverse direction . At this time, it is preferable to stretch at least 1.5 times in the range of 10 to 30 占 폚 higher than the glass transition temperature of the base resin at the time of the first one-step stretching, and then reproduce.

Next, a method of manufacturing a photomask in the form of a nonwoven fabric,

a2) preparing a master batch for a base resin comprising inorganic particles;

b2) mixing the master batch and the base resin, and then heating to prepare a spinning liquid; And

c2) preparing a photomask by spin coating the spinning solution with a collector to form a film in the form of a nonwoven fabric, and then curing the spinning solution;

. ≪ / RTI >

Since the step a2) is the same as or similar to the master batch and the casting solution in the production of the film-type photomask, the material, the manufacturing method and the processing conditions described in steps a1) and b1) may be introduced And the composition material and conditions may be applied differently.

However, unlike a film-type photomask, inorganic particles are not pores formed by stretching, so that the average particle size is preferably smaller than the inorganic particles added during the production of the film, preferably 10 to 500 nm, No trimming may occur. For the same reason, when the polymer resin particles are additionally added in addition to the inorganic particles, the average particle diameter of the polymer resin particles is also preferably adjusted to the above range.

When the spinning solution is prepared as described above, the spinning solution is melt-blown to form a film in the form of a nonwoven fabric, and then cured to produce a photomask. This is based on the fact that the existing nonwoven fabric has porosity and the flow of air is free. When the spinning solution containing the inorganic particles capable of blocking ultraviolet rays is melt-blown, the spinning fibers gather on the collecting body to naturally pore And a photomask having irregular pores can be obtained by curing the nonwoven fabric.

However, when the photomask is manufactured as described above, the basis weight of the nonwoven fabric greatly affects the fiber size, the speed of the collecting body, the spinning time, etc., and the basis weight of the nonwoven fabric is greatly related to the porosity of the photomask It is preferable to control the nonwoven fabric manufacturing conditions as described above.

In order to control the size of the pores formed in the photomask, it is preferable to adjust the fineness of the fibers to a specific range or adjust the amount of the fibers that the collecting body receives.

Preferably, the spinning degree of the spinning fiber in step c2) is 30 to 100 denier (D). Outside of the above range, the physical properties of the photomask are deteriorated or the pores are not formed properly.

In order to control the fineness of the spinning fiber in the present invention, it is preferable to adjust the air supply speed. When the spinning fiber is extruded from the spinneret, micronized stretching with high-pressure hot-air occurs, and the fineness of the fiber is determined at this time.

In the present invention, the air supply rate is preferably 10 to 100 m / s. This is because the stretching of the spinning fiber is effectively caused by the air-drag force acting on the base resin in the above range.

In addition, the distance between the spinneret and the collector in the spinning process is preferably 200 to 500 mm. Since the distance between the discharge port and the collector and the fineness are in an inverse relationship, if it is less than the above range, the fineness becomes too large and the pores can not be formed properly. If the range is exceeded, the mechanical properties of the photomask may be deteriorated.

It is also preferable that the rotating speed of the collecting body is controlled to 10 to 200 mm / s and the moving speed of the collecting body is controlled to 10 to 500 mm / s in order to adjust the amount of fibers received by the collector. The nonwoven fabric for photomask having uniform thickness and pore in the above range can be produced, and the mechanical properties can be maintained.

In the present invention, when the photomask is produced in the form of a nonwoven fabric, the pore size can be adjusted by stretching as required. At this time, the stretching method and conditions are not limited to the present invention, and the same conditions and manufacturing methods as in the production of a film type photomask may be applied.

The non-woven type photomask may have a thickness of 1 to 200 탆, more preferably 50 to 100 탆, similarly to the film type photomask. When the thickness of the intermediate film is less than 1 탆, breakage of the film may occur during the stretching of the intermediate film. If the thickness is more than 200 탆, the pores are not properly formed and irregular patterning does not occur properly.

Next, the photomask prepared as described above is laminated, and ultraviolet rays are irradiated to selectively cure the ultraviolet curing agent. At this time, the hardening agent which is not exposed by the photomask due to the inorganic particles contained in the photomask does not cause hardening, and the exposed portion is hardened by ultraviolet rays and remains as a kind of irregular pattern having irregular patterns. The remaining portion prevents the contact of the etching liquid at the time of etching the glass substrate, so that irregular patterns can be naturally transferred to the substrate.

In this case, the uncured portion shows a state of fluidity at 25 캜, and a case where a liquid component is adhered to a finger by touching a portion not exposed by a photomask after ultraviolet ray irradiation is judged uncured.

In the present invention, in the step D), a photomask is laminated, and then the ultraviolet curing agent is selectively cured by irradiation of radiation. At this time, the irradiation amount of ultraviolet rays is preferably 5 to 2,000 mJ / cm2, particularly preferably 10 to 1,000 mJ / cm2. If it is out of the above range, the etching may not proceed excessively due to the change of the uncured component, or the irregular pattern may not be transferred properly to the substrate.

The light source used for curing the ultraviolet curing agent may be any type of lamp that can irradiate ultraviolet rays or near ultraviolet rays. For example, low-pressure, high-pressure or ultra-high-pressure mercury lamps, metal halide lamps, xenon lamps or electrodeless lamps.

The wavelength of the ultraviolet ray to be irradiated on the ultraviolet curing agent in the step D) is not particularly limited, but when the maximum illuminance in the range of 320 to 450 nm is taken as 100, the ratio of the maximum illuminance in 200 to 320 nm Is preferably 30 or less, and particularly preferably 200 to 320 nm is preferably 10 or less since no deterioration occurs in the photomask or ultraviolet curing agent.

Next, the photomask and the uncured ultraviolet curing agent are removed from the glass substrate. The method of removing the ultraviolet curing agent is not limited to the present invention, but may be carried out physically or by using an aqueous solvent or an alkoxyethanol having acetone, ethyl acetate, an alkoxy group having 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, diethylene It is preferable to use an organic solvent cleaning solution such as glycol monomethyl ether, diethylene glycol monoethyl ether, or diethylene glycol monobutyl ether.

 After the un-cured ultraviolet curing agent is removed, the glass substrate is etched to etch the exposed portion without selecting the ultraviolet curing agent.

In order to etch the glass substrate, an etching solution mixed with hydrogen peroxide, fluoride salt, sulfuric acid, organic acid, or the like may be used. Preferably, The etching of the surface of the glass substrate using a hydrofluoric acid solution can be performed by firstly etching the surface of the glass substrate using a solution of about 50% purity and by using a fluorine acid solution having a low purity, It is possible to form a pattern layer on the surface of the glass substrate by performing a secondary etching treatment for finely correcting the surface of the glass substrate.

The etching solution may be coated directly on the glass substrate, or the surface requiring etching may be directly immersed in the etching solution. As a result, etching does not occur at the portions not exposed by the ultraviolet hardener, and portions where the ultraviolet hardener is removed are etched by the etching solution to naturally transfer the irregular patterns of the photomast to the glass substrate.

As the irregular patterns are formed on the surface of the glass substrate as described above, it has a relatively large and coarse cutting edge and a surface structure in which fine cutting edges are mixed. Accordingly, when the nail tip or the flat surface is trimmed, it is not necessary to alternately use the rough cutting surface and the fine cutting surface, and the damage of the nail can be prevented.

In this step, a design such as a letter, a pattern, or a pattern may be formed on the other surface of the glass substrate, and a character, a pattern, or a pattern may be formed on the other surface of the glass substrate by using a silk printing method.

After the etching is completed as described above, the residual ultraviolet hardening agent may be removed to complete the buffer for nail cleansing. In this case, the removing method is not limited to the present invention, and the nail polishing tool can be manufactured by immersing the glass substrate in an alkali solution such as sodium hydroxide or treetylamine or by spray coating and peeling the cured etching resist pattern layer .

The present invention includes a nail cleansing buffer manufactured by the above method. At this time, the buffer has a first polishing section having a plurality of concavities and convexities having an average diameter of 1 to 10 mu m on the surface, a second polishing section having a plurality of concavities and convexities having an average diameter of 10 to 50 mu m, 3 < / RTI >

That is, the nail cleansing buffer manufactured according to the present invention includes the polishing unit having irregularities having diameters of various sizes, and the irregularities may be formed by dividing the irregularities by the diameter size.

As described above, various methods can be applied in order to form the polishing part by the size of the irregularities. For example, in the case of a porous film type photomask, the diameter of the inorganic particles included in the film may be varied for each of the respective polishing portions, and then a photomask for each polishing portion may be prepared and laminated. A photomask having different magnifications may be prepared for each of the polishing portions and laminated on the surface of the glass substrate corresponding to each polishing portion.

In the case of the non-woven fabric type photomask, the size of the pores formed by stretching after the production of the nonwoven fabric is increased, or the photomask having different yarn spinning speed, spinning distance, discharge amount of the spinning solution, And then laminated on the surface of the glass substrate corresponding to each polishing portion.

The buffer manufactured according to the above method has a shape in which a coarse cutting edge and a fine cutting edge are mixed on the surface by using a photomask having an irregular pattern. Therefore, since the irregular surface of the nail is polished simultaneously with the rough cutting edge and the fine cutting edge, it is possible to polish more uniformly than the conventional buffer, and it is unnecessary to alternately use the buffer having the large irregular pattern and the buffer having the small irregular pattern It is easy to use and can maximize user satisfaction.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims. It will be understood that the present invention can be changed.

Claims (11)

A) forming a chromium coating layer on one side of a glass substrate;
B) applying an ultraviolet curing agent to the chromium coating layer;
C) laminating a photomask having an irregular pattern on the ultraviolet curing agent;
D) curing the ultraviolet curing agent by irradiating the substrate with ultraviolet rays;
E) removing the photomask and uncured UV curing agent from the glass substrate;
F) etching the E) substrate; And
G) removing the remaining ultraviolet curing agent;
Wherein the buffer layer is formed of a material having an irregular pattern.
The method according to claim 1,
In the photomask,
a1) preparing a master batch for a base resin comprising inorganic particles;
b1) mixing the master batch and the base resin and then heating to produce a casting liquid;
c1) coating the casting liquid to form a film, and curing the film to produce a photomask intermediate film; And
d1) stretching the photomask intermediate film;
Wherein the buffer layer is produced by a method comprising the steps of:
The method according to claim 1,
In the photomask,
a2) preparing a master batch for a base resin comprising inorganic particles;
b2) mixing the master batch and the base resin, and then heating to prepare a spinning liquid; And
c2) preparing a photomask by spin coating the spinning solution with a collector to form a film in the form of a nonwoven fabric, and then curing the spinning solution;
Wherein the buffer layer is produced by a method comprising the steps of:
3. The method of claim 2,
Wherein the inorganic particles have an irregular pattern with an average particle diameter of 10 nm to 100 mu m.
3. The method of claim 2,
Wherein the step c1) comprises applying the casting solution to a thickness of 1 to 200 mu m.
3. The method of claim 2,
And d1) is biaxial stretching at a magnification of 2 to 5. The method for manufacturing a buffer for nail peeling according to claim 1,
The method of claim 3,
Wherein the c2) step has an irregular pattern with an air supply rate of 10 to 100 m / s.
The method of claim 3,
Wherein the collecting body has an irregular pattern with a rotational speed of 10 to 200 mm / s and a lateral moving speed of 10 to 500 mm / s.
The method of claim 3,
Wherein the spinning fibers of step c2) have an irregular pattern with a fineness of 30 to 100 denier.
The method according to claim 2 or 3,
Wherein the inorganic particles have irregular patterns of one or more selected from titanium oxide, magnesium silicate, magnesium oxide and kaolin.
A buffer for nail peeling having an irregular pattern prepared from the manufacturing method according to claim 1, wherein the buffer has a first polishing section having a plurality of irregularities having an average diameter of 1 to 10 mu m on the surface, a plurality of irregularities having an average diameter of 10 to 50 mu m And a third polishing portion having a plurality of concavities and convexities with an average diameter of 50 to 100 占 퐉.