KR20180088800A - LAMINATE SUBSTRATE, ELECTRONALLIC SUBSTRATE, LAMINATE SUBSTRATE PROCESS AND METHOD - Google Patents

Abstract

A problem to be solved by the present invention is to provide a laminate substrate including a copper layer and capable of suppressing a decrease in visibility of a display even when applied to a reflective display.
The laminate substrate of the present invention comprises a transparent substrate (11) and a laminate formed on at least one side of the transparent substrate (11), the laminate comprising an alloy layer (13) containing copper and nickel, And a copper layer (12), and the proportion of nickel in the metal component contained in the alloy layer (13) is 10 mass% or more and 25 mass% or less.

Description

LAMINATE SUBSTRATE, ELECTRONALLIC SUBSTRATE, LAMINATE SUBSTRATE PROCESS AND METHOD

The present invention relates to a laminate substrate, a conductive substrate, a laminate substrate manufacturing method, and a conductive substrate manufacturing method.

2. Description of the Related Art Conventionally, various display devices have been studied. For example, self-emission type plasma display panels, non-light emitting type liquid crystal displays, and electronic papers are known. Among them, liquid-crystal displays, electronic papers, etc., which are non-light emitting display devices, have been particularly studied in recent years due to an increase in demand.

On the other hand, in a non-light emitting display device, a light source is required to view a displayed object, and it can be divided into a transmissive type and a reflective type depending on the light source. The transmissive type has a structure in which light is supplied by the backlight disposed on the back surface of the display device, and light is transmitted from the back surface of the display device toward the display surface that is the surface. In the reflection type, for example, the light incident on the display surface side, which is the surface of the display device, is reflected by the reflection plate provided on the back surface, and the light is transmitted again toward the surface side.

As a non-light emitting type display device, for example, a microcapsule type electrophoretic display device, which is a kind of electrophoretic display device, is known. Patent Document 1 describes an electrophoretic display device using an electrophoresis phenomenon as follows.

The electrophoresis phenomenon is a phenomenon in which particles (electrophoretic particles) naturally charged by dispersion are migrated by the Coulomb force when an electric field is applied to a dispersion in which fine particles are dispersed in a liquid dispersion medium.

In the basic structure of the electrophoretic display device, one electrode and the other electrode face each other with a predetermined gap therebetween, and the dispersion (electrophoretic dispersion liquid) is sealed therebetween. At least one of the electrodes is made transparent, and the transparent electrode side is used as an observation surface. When a potential difference is applied between the both electrodes, the electrophoretic particles are attracted to either one of the electrodes in accordance with the direction of the electric field.

Therefore, in this structure, when the dispersion medium is dyed with a dye and the electrophoretic particles are composed of pigment particles, the color of the electrophoretic particles or the color of the dye is seen along the electric field direction on the transparent observation surface. Therefore, an image can be displayed by forming electrodes in a pattern corresponding to each pixel and controlling the voltage applied to each pixel electrode.

A microcapsule type electrophoretic display device, which is known as one type of electrophoretic display device and is a type of electrophoretic display device, has a layer comprising a plurality of microcapsules containing an electrophoretic dispersion liquid as an electrophoretic layer between opposing electrodes And has a deployed structure.

Such an electrophoretic display device is advantageous in that the configuration is simple, the viewing angle is wide, the power consumption is low, and the display image holding performance (memory property) is provided.

[0004] In electronic paper, however, electronic paper having a touch panel for intuitive information input has been studied.

For example, Patent Document 2 discloses a plasma display panel comprising an electronic ink provided between an upper substrate and a lower substrate, an upper electrode provided on a lower surface of the upper substrate for generating a signal by driving the electronic ink, And a sensing electrode provided on the upper electrode and adapted to generate a capacitance between the upper electrode and the upper electrode in accordance with a signal and sense a change in capacitance when the input means is touched, A panel-integrated electronic paper is disclosed. It is also disclosed that the sensing electrode is formed of a conductive polymer.

As a display device having a touch panel, a display device in which a touch panel is disposed in a transmission type liquid crystal display having a backlight has been widely used.

In a liquid crystal display having a touch panel, for example, as disclosed in Patent Document 3, a touch comprising a transparent conductive film made of a metal oxide, such as an ITO (indium oxide-tin oxide) film, A transparent conductive film for a panel has conventionally been used.

In recent years, however, the transmissive liquid crystal display with a touch panel has been made larger and, correspondingly, a larger area is required for a conductive substrate such as a transparent conductive film for a touch panel. However, since ITO has a high electric resistance value, there is a problem that it can not cope with the large-sized surface of the conductive substrate.

Thus, as disclosed in Patent Documents 4 and 5, it has been studied to use a metal wiring such as copper instead of the ITO film wiring. However, when copper is used for the metal wiring, for example, since copper has a metallic luster, there is a problem that the visibility of the display is lowered due to reflection.

A conductive substrate in which a blackening layer composed of a black material is formed on a surface parallel to the surface of a transparent substrate of a metal wiring in addition to a metal wiring such as copper has been studied. According to such a conductive substrate, even when applied to a transmission type liquid crystal display or the like, it is possible to suppress the reflection of light on the surface of the metal wiring by the blackening layer and to improve the visibility of the display.

In addition, in a display device other than a transmissive liquid crystal display, for example, a reflective display, it is required to lower the electric resistance value in a transparent conductive film for a touch panel in order to cope with the enlargement of the screen. Thus, it has been studied to apply a conductive substrate formed with a blackening layer composed of a black material on the surface parallel to the surface of the transparent substrate of the metal wiring in addition to the metal wiring such as copper described above.

Japanese Unexamined Patent Publication No. 2004-258370 Japanese Published Unexamined Patent Application, Publication No. 2012-027890 Japanese Unexamined Patent Publication No. 2003-151358 Japanese Unexamined Patent Publication No. 2011-018194 Japanese Unexamined Patent Publication No. Hei. 2013-069261

However, in the reflection type display, when a blackening layer composed of a black material is formed on the surface parallel to the surface of the transparent substrate of the metal wiring, the visibility of the display may be rather deteriorated.

SUMMARY OF THE INVENTION In view of the above problems of the prior art, it is an object of the present invention to provide a laminate substrate including a copper layer and capable of suppressing a decrease in visibility of a display even when applied to a reflective display.

The present invention for solving the above-mentioned problems is characterized in that it comprises a transparent substrate (base material) and a laminate formed on at least one side of the transparent substrate, wherein the laminate comprises an alloy layer containing copper and nickel, And a ratio of nickel in the metal component contained in the alloy layer is 10 mass% or more and 25 mass% or less.

According to the present invention, the present invention can provide a laminate substrate including a copper layer and capable of suppressing a decrease in visibility of a display even when applied to a reflective display.

1A is a cross-sectional view of a laminated substrate according to an embodiment of the present invention.
1B is a cross-sectional view of a laminate substrate according to an embodiment of the present invention.
2A is a cross-sectional view of a laminate substrate according to an embodiment of the present invention.
2B is a cross-sectional view of a laminate substrate according to an embodiment of the present invention.
3 is a top view of a conductive substrate having mesh-shaped wiring according to an embodiment of the present invention.
4 is a cross-sectional view taken along the line AA 'in Fig.
5 is an explanatory diagram of a roll-to-roll sputtering apparatus.

Hereinafter, one embodiment of the laminate substrate, the conductive substrate, the laminate substrate manufacturing method and the conductive substrate manufacturing method of the present invention will be described.

(Laminate substrate, conductive substrate)

The laminate substrate of the present embodiment may have a transparent substrate and a laminate formed on at least one side of the transparent substrate. The layered body has an alloy layer containing copper and nickel and a copper layer, and the ratio of nickel in the metal component contained in the alloy layer may be 10 mass% or more and 25 mass% or less.

On the other hand, the laminate substrate in the present embodiment is a substrate having a copper layer, an alloy layer and the like on the surface of the transparent substrate before patterning. The conductive substrate is a wiring substrate having a copper wiring layer, an alloy wiring layer, and the like patterned on the surface of a transparent substrate in the form of wiring.

First, each member included in the laminate substrate of the present embodiment will be described below.

The transparent substrate is not particularly limited, and preferably a polymer film or a glass substrate that transmits visible light can be used.

Preferable examples of the polymer film that transmits visible light include a polyamide film, a polyethylene terephthalate film, a polyethylene naphthalate film, a cycloolefin film, a polyimide film, a polycarbonate film, and the like A resin film or the like can be used.

The thickness of the transparent substrate is not particularly limited and may be arbitrarily selected depending on the strength and light transmittance required when the substrate is a conductive substrate. The thickness of the transparent substrate may be, for example, 10 占 퐉 or more and 250 占 퐉 or less. In particular, when it is used for a reflection type display such as an electronic paper, it is preferably 20 μm or more and 200 μm or less, more preferably 20 μm or more and 120 μm or less. For example, in applications where it is required to reduce the thickness of the entire display, it is preferable that the thickness of the transparent substrate is not less than 20 占 퐉 and not more than 100 占 퐉.

Next, the laminate will be described. The laminate may be formed on at least one side of the transparent substrate, and may have an alloy layer and a copper layer.

Here, the copper layer will be described first.

Although the copper layer is not particularly limited, it is preferable not to place the adhesive between the copper layer and the transparent substrate or between the copper layer and the alloy layer so as not to reduce the light transmittance. That is, the copper layer is preferably formed directly on the upper surface of the other member.

Since the copper layer is directly formed on the upper surface of the other member, a copper thin film layer can be formed by a dry plating method such as a sputtering method, an ion plating method, or a vapor deposition method, and the metal thin film layer can be made into a copper layer.

When the copper layer is made thicker, it is preferable to use the wet plating method after the copper thin film layer is formed by the dry plating method. That is, for example, a copper thin film layer may be formed on a transparent substrate or an alloy layer by a dry plating method, and the copper thin film layer may be used as a power supply layer to form a copper plating layer by a wet procurement method. In this case, the copper layer has a copper thin layer and a copper plating layer.

As described above, a copper layer can be formed by a dry plating method alone or in combination of a dry plating method and a wet plating method, whereby a copper layer can be formed directly on a transparent substrate or an alloy layer without passing through an adhesive.

The film thickness of the copper layer is not particularly limited, and when the copper layer is used as the wiring, it can be arbitrarily selected depending on the electric resistance of the wiring, the wiring width, and the like. Particularly, the copper layer preferably has a thickness of 50 nm or more, more preferably 60 nm or more, and more preferably 150 nm or more so that current can flow sufficiently. The upper limit value of the copper layer film thickness is not particularly limited, but if the copper layer is thick, etching takes a long time when etching to form wiring, so that side etching is likely to occur such as peeling of the resist during etching. Therefore, the film thickness of the copper layer is preferably 5000 nm or less, more preferably 3000 nm or less. When the copper layer has a copper thin film layer and a copper plating layer as described above, it is preferable that the total thickness of the copper thin film layer and the copper plating layer is within the above range.

Next, the alloy layer will be described.

Since the copper layer has a metallic luster, the copper layer reflects light as described above, and only the reflective layer of the reflective type, such as electronic paper, for example, is formed by forming the copper wiring layer, There is a problem that the visibility of the display is lowered when used as a display wiring board.

Therefore, as described above, in the conductive substrate used for the transmissive display, in addition to the metal wiring such as copper, a conductive substrate in which a blackening layer composed of a black material is formed on the surface parallel to the surface of the transparent substrate of the metal wiring is examined . However, when a conductive substrate on which a blackening layer is disposed for a reflective display is used, the visibility of the display may be deteriorated.

Accordingly, the inventors of the present invention have studied a laminated substrate including a copper layer, which can suppress a decrease in visibility of a display when applied to a reflective display.

As a result, by providing an alloy layer containing copper and nickel, it is possible to obtain a laminate substrate capable of suppressing reflection of long wavelength light, for example, light having a wavelength of 600 nm or more and 780 nm or less, on the surface of the copper layer, It has been found that the use of such a laminate substrate can suppress a decrease in the visibility of the reflection type display. By arranging an alloy layer having a predetermined composition such that a * of light having a wavelength of 380 nm or more and not more than 780 nm and not more than 9 and L * of not less than 80 in the laminate substrate, the reflection of long wavelength light on the surface of the copper layer is suppressed The present invention has been completed.

Therefore, the alloy layer disposed on the laminate substrate of the present embodiment can be composed of an alloy containing copper and nickel as essential components.

And, among the metal components contained in the alloy layer, that is, the metal component contained in the alloy constituting the alloy layer, the ratio of nickel is preferably 10 mass% or more and 25 mass% or less. On the other hand, the ratio of nickel indicates the proportion of nickel when the total amount of the metal components in the alloy constituting the alloy layer is 100 mass%.

Specifically, for example, when the alloy layer contains only copper and nickel as metal components, it is preferable that the content of nickel is within the above range when the total content of copper and nickel is 100 mass%.

Further, the alloy layer may contain copper, nickel and zinc. That is, the alloy constituting the alloy layer may contain zinc in addition to copper and nickel.

When the alloy constituting the alloy layer further contains zinc, the proportion of nickel in the metal component contained in the alloy layer is preferably 10 mass% or more and 25 mass% or less, and the proportion of zinc is preferably 10 mass% or more and 30 mass% or less . That is, when the total content of the metal components in the alloy constituting the alloy layer is 100 mass%, the ratio of nickel is preferably 10 mass% or more and 25 mass% or less, and the proportion of zinc is preferably 10 mass% or more and 30 mass% or less Do.

On the other hand, in this case, the total of the metal components in the alloy constituting the alloy layer means, for example, the total content of copper, nickel and zinc.

When the alloy constituting the alloy layer contains copper, nickel and zinc as described above and the content of nickel is 10 mass% or more and 25 mass% or less when the content of the metal component in the alloy is 100 mass% As the alloy, for example, white copper, gold silver and the like can be suitably used as needed.

As described above, in the case where the laminated substrate of the present embodiment is a conductive substrate having a desired wiring pattern and is used as a wiring substrate for a reflective display, in order to improve the visibility of the display, the L * a * b * And a * of light having a wavelength of 380 nm or more and 780 nm or less in the alloy layer is preferably 9 or less. The L * of the light having a wavelength of 380 nm or more and 780 nm or less is preferably 80 or more.

However, when the proportion of nickel in copper and nickel contained in the alloy layer is less than 10% by mass, the a * of light having a wavelength of 380 nm or more and 780 nm or less in the alloy layer may not be 9 or less. On the other hand, if the ratio of nickel to nickel contained in the alloy layer is more than 25 mass%, nickel becomes excessive, and the L * value of light having a wavelength of 380 nm or more and 780 nm or less in the alloy layer can not be made 80 or more There is a case.

Therefore, as described above, the alloy constituting the alloy layer of the laminate substrate of the present embodiment has a nickel content of 10% by mass or more and 25% by mass or less when the total content of the metal components is 100% by mass desirable.

On the other hand, the alloy constituting the alloy layer may contain copper and nickel as the metal species, as described above. The metal species contained in the alloy constituting the alloy layer may be composed of only copper and nickel, but only copper and nickel But is not limited thereto. For example, the alloy constituting the alloy layer may further contain zinc as the metal species, as described above, or may contain unavoidable impurities of 1 mass% or less.

The alloy constituting the alloy layer is not particularly limited as long as it contains copper and nickel, and the state in which each component is contained.

The copper interconnection layer and the alloy interconnection layer of the conductive substrate obtained from the laminate substrate of the present embodiment can maintain the characteristics of the copper layer and the alloy layer of the laminate substrate of the present embodiment respectively.

The method of forming the alloy layer disposed on the conductive substrate of the present embodiment is not particularly limited. The alloy layer is preferably formed by, for example, a dry film forming method such as a sputtering method.

When the alloy layer is formed by the sputtering method, for example, a copper-nickel alloy target is used and a film can be formed while an inert gas used as a sputtering gas is supplied into the chamber.

When a copper-nickel alloy target is used in the sputtering, it is preferable that the ratio of nickel in copper to nickel contained in the copper-nickel alloy is 10% by mass or more and 25% by mass or less. On the other hand, the ratio of nickel indicates the proportion of nickel when the total content of copper and nickel, which are metal components in the copper-nickel alloy, is 100% by mass.

This is because the proportion of nickel in copper and nickel, which is a metal component contained in the alloy layer to be deposited, and the ratio of nickel to nickel in the copper and nickel, which are metal components contained in the copper- nickel alloy used in the copper- Is the same.

The inert gas for forming the alloy layer is not particularly limited, and for example, argon gas, xenon gas or the like can be used, and argon gas can be suitably used as needed.

The thickness of the alloy layer formed on the laminate substrate of the present embodiment is not particularly limited. For example, light of a long wavelength at the surface of the copper layer, for example, a wavelength of 600 nm And the degree of suppression of reflection of light of not less than 780 nm.

The lower limit value of the alloy layer thickness is preferably 10 nm or more, and more preferably 15 nm or more. The upper limit value of the alloy layer thickness is preferably, for example, 70 nm or less, more preferably 50 nm or less.

As described above, the alloy layer can function as a layer particularly suppressing reflection of long wavelength light on the surface of the copper layer. However, when the thickness of the alloy layer is thin, reflection of long wavelength light by the copper layer can not be sufficiently suppressed There is a case. On the other hand, by setting the thickness of the alloy layer to 10 nm or more, it is possible to more reliably suppress reflection of long wavelength light on the surface of the copper layer.

Although the upper limit value of the alloy layer thickness is not particularly limited, if it is thicker than necessary, the time required for film formation, the time required for etching at the time of forming the wiring, and the like increase, resulting in an increase in cost. Therefore, the thickness of the alloy layer is preferably 70 nm or less as described above, and more preferably 50 nm or less.

Next, a structural example of the multilayer substrate of the present embodiment will be described.

As described above, the laminate substrate of the present embodiment may include a laminate having a transparent substrate, a copper layer, and an alloy layer. At this time, the order of arranging the copper layer and the alloy layer in the laminate on the transparent substrate, the number of layers, and the like are not particularly limited. That is, for example, the copper layer and the alloy layer may be laminated in an arbitrary order on at least one side of the transparent substrate. The copper layer and / or the alloy layer may be arranged in a plurality of layers in the laminate.

However, when the copper layer and the alloy layer are arranged in the laminate, it is preferable that the alloy layer is disposed on the surface of the copper layer surface on which the reflection of the long wavelength light is particularly to be suppressed, in order to suppress reflection of light on the surface of the copper layer.

In particular, it is more preferable that the alloy layer has a laminated structure formed on the surface of the copper layer. Specifically, for example, it is preferable that the laminate has a first alloy layer and a second alloy layer as alloy layers, and a copper layer is disposed between the first alloy layer and the second alloy layer.

A concrete configuration example will be described below with reference to Figs. 1A, 1B, 2A, and 2B. Figs. 1A, 1B, 2A, and 2B show examples of cross-sectional views on a plane parallel to the stacking direction of the transparent substrate, the copper layer, and the alloy layer of the multilayer substrate of this embodiment.

For example, as in the case of the laminate substrate 10A shown in Fig. 1A, the copper layer 12 and the alloy layer 13 can be stacked one on the other on the side 11a side of the transparent substrate 11 have. As in the case of the laminate substrate 10B shown in Fig. 1B, the copper layers 12A and 12B and the alloy layers 12A and 12B are formed on the other surface 11b side and the other surface 11b side of the transparent substrate 11, The layers 13A and 13B can be stacked one after another in this order. On the other hand, the order of laminating the copper layers 12 (12A and 12B) and the alloy layers 13 (13A and 13B) is not limited to the examples of Figs. 1A and 1B, : 13A, 13B) and the copper layer 12 (12A, 12B).

Further, as described above, for example, the alloy layer may be provided in a plurality of layers on one surface of the transparent substrate 11. The first alloy layer 131, the copper layer 12, and the second alloy layer (not shown) are formed on one surface 11a side of the transparent substrate 11, as in the case of the laminate substrate 20A shown in Fig. 132 in this order.

Thus, by disposing the first alloy layer 131 and the second alloy layer 132 as the alloy layer and the copper layer 12 between the first alloy layer 131 and the second alloy layer 132 , It is possible to reliably suppress reflection of light incident on the upper surface and the lower surface of the copper layer 12.

In this case as well, the copper layer, the first alloy layer, and the second alloy layer may be laminated on both surfaces of the transparent substrate 11. Concretely, as in the case of the laminate substrate 20B shown in Fig. 2B, the first alloy layers 131A, 131B are formed on one surface 11a side and the other surface 11b side of the transparent substrate 11, 131B, copper layers 12A, 12B, and second alloy layers 132A, 132B in this order.

On the other hand, the first alloy layer 131 (131A, 131B) and the second alloy layer 132 (132A, 132B) can be made of an alloy layer containing both copper and nickel, have.

In the configuration examples of Figs. 1B and 2B in which a copper layer and an alloy layer are laminated on both surfaces of a transparent substrate, a layer in which the transparent substrate 11 is a symmetrical surface and the layers stacked on and under the transparent substrate 11 are arranged symmetrically However, the present invention is not limited to this. For example, in FIG. 2B, the structure on the side of one surface 11a of the transparent substrate 11 is formed in the order of the copper layer 12A and the alloy layer 13A in the same manner as the structure of FIG. 1B, And the other side (the other side 11b) side is laminated in this order on the first alloy layer 131B, the copper layer 12B and the second alloy layer 132B, One layer may be asymmetric.

As described above, the chromaticity a * and the lightness L * in the L * a * b * coloring system of the alloy layer of the laminate substrate of the present embodiment are preferably set in the range of, for example, It is preferable that a * of light having a wavelength of 380 nm or more and 780 nm or less is 9 or less and L * is 80 or more.

This is because when the a * of light having a wavelength of 380 nm or more and 780 nm or less in the alloy layer is 9 or less and L * is 80 or more, for example, the laminated substrate of the present embodiment is used as a conductive substrate for a reflective display The deterioration of the visibility of the reflection type display can be greatly suppressed.

The a * and L * values of the laminate substrate can be calculated from the reflectance measured by irradiating the alloy layer with light. That is, it can be calculated from the reflectance measured by irradiating light on the alloy layer side of the copper layer and the alloy layer contained in the laminate substrate. Specifically, for example, when the copper layer 12 and the alloy layer 13 are stacked in this order on one surface 11a of the transparent substrate 11 as shown in Fig. 1A, The surface A of the alloy layer 13 can be irradiated with light and measured. 1A, the arrangement of the copper layer 12 and the alloy layer 13 is changed so that the alloy layer 13 and the copper layer 12 are stacked in this order on one surface 11a of the transparent substrate 11, A * and L * were calculated from the reflectance measured by irradiating light from the side of the surface 11b of the transparent substrate 11 to the alloy layer 13.

In the alloy layer of the laminate substrate of FIG. 2A, a * and L * of light having a wavelength of 380 nm or more and 780 nm or less are the first alloy layer 131 or the first alloy layer 131 disposed on the outermost surface, Refers to a *, L * calculated from the reflectance at the surface of the second alloy layer 132 where the surface light is incident.

That is, in a laminate substrate having a plurality of alloy layers on its surface except for the transparent substrate, as shown in Fig. 2A, at least one of the alloy layers located on the surface has a light wavelength of 380 nm or more and 780 nm or less it is preferable that a * is 9 or less and L * is 80 or more. Particularly, it is more preferable that a * of light having a wavelength of 380 nm or more and 780 nm or less and L * of 80 or more is 9 or less for both alloy layers located on the surface.

Further, a * and L * of light having a wavelength of 380 nm or more and 780 nm or less mean chromaticity and brightness calculated from the reflectance measurement result when the wavelength is measured while changing the wavelength within a range of 380 nm to 780 nm. The width at which the wavelength is changed when the reflectance is measured is not particularly limited. For example, it is preferable to measure the light with the wavelength in the above-mentioned range while changing the wavelength every 10 nm. It is more preferable to measure the light in the wavelength range.

On the other hand, as will be described later, the laminate substrate can be formed into a conductive substrate by forming fine metal wires by wiring processing the copper layer and the alloy layer by etching. A * and L * of the light in the alloy wiring layer in the conductive substrate mean a * and L * calculated from the reflectance at the surface of the alloy wiring layer disposed on the outermost surface excluding the transparent substrate, it means.

Therefore, in the case of the conductive substrate after the etching treatment, it is preferable that the measured value at the portion where the copper layer and the alloy layer remain satisfy the above range.

Next, the conductive substrate of the present embodiment will be described.

The conductive substrate of the present embodiment may include a transparent substrate and a metal thin line formed on at least one side of the transparent substrate. The metal thin wire is a laminate including an alloy wiring layer containing copper and nickel and a copper wiring layer, and the ratio of nickel in the metal component contained in the alloy wiring layer may be 10 mass% or more and 25 mass% or less.

The conductive substrate of the present embodiment can be obtained, for example, by wiring processing the above-described laminate substrate. Further, in the conductive substrate of the present embodiment, since the copper wiring layer and the alloy wiring layer are provided on the transparent substrate, reflection of long wavelength light on the surface of the copper wiring layer can be suppressed. That is, by providing the alloy wiring layer, good display visibility can be obtained when used in, for example, a reflection type display such as an electronic paper.

The conductive substrate of the present embodiment is preferably used, for example, as a conductive substrate for a reflective display such as an electronic paper. In this case, the conductive substrate may have a wiring pattern formed by providing openings in the copper layer and the alloy layer in the above-described laminate substrate. More preferably, a mesh-shaped wiring pattern may be provided.

The conductive substrate on which the wiring pattern with openings is formed can be obtained by etching the copper layer and the alloy layer of the laminate substrate described above. Then, for example, a conductive substrate having a mesh-shaped wiring pattern can be formed of two thin metal wires. A specific configuration example is shown in Fig. Fig. 3 shows a view of the conductive substrate 30 having the mesh-shaped wiring pattern viewed from the top surface side in the stacking direction of the copper wiring layer and the alloy wiring layer. The conductive substrate 30 shown in Fig. 3 has a transparent substrate 11, a plurality of copper wiring layers 31B parallel to the X-axis direction in the figure, and a copper wiring layer 31A parallel to the Y-axis direction. On the other hand, the copper wiring layers 31A and 31B can be formed by etching the above-described laminate substrate, and an alloy wiring layer (not shown) is formed on the upper surface and / or the lower surface of the copper wiring layers 31A and 31B. The alloy wiring layer is etched in almost the same shape as the copper wiring layers 31A and 31B.

The arrangement of the transparent substrate 11 and the copper wiring layers 31A and 31B is not particularly limited. Fig. 4 shows an example of the arrangement of the transparent substrate 11 and the copper wiring layer. Fig. 4 corresponds to a cross-sectional view taken along the line A-A 'in Fig.

For example, as shown in Fig. 4, the copper wiring layers 31A and 31B may be disposed on the upper and lower surfaces of the transparent substrate 11, respectively. On the other hand, in the case of the conductive substrate shown in Fig. 4, the first alloy wiring layers 321A and 321B etched in the same manner as the copper wiring layers 31A and 31B are formed on the transparent substrate 11 side of the copper wiring layers 31A and 31B, Respectively. The second alloy wiring layers 322A and 322B are disposed on the surfaces of the copper wiring layers 31A and 31B opposite to the transparent substrate 11, respectively.

4, the metal thin wire has the first alloy wiring layers 321A and 321B and the second alloy wiring layers 322A and 322B as the alloy wiring layers and the copper wiring layers 31A and 31B have the first alloy wiring layers 321A and 321B, Are disposed between the first alloy wiring layers 321A and 321B and the second alloy wiring layers 322A and 322B.

Here, an example in which the first alloy wiring layer and the second alloy wiring layer are provided is shown here, but the present invention is not limited to this. For example, only one of the first alloy wiring layer and the second alloy wiring layer may be provided.

The conductive substrate having the mesh-shaped wiring pattern shown in Fig. 3 is formed by laminating copper layers 12A and 12B and alloy layers 13A and 13B (131A and 132A) on both surfaces of a transparent substrate 11 as shown in Figs. 1B and 2B, , 131B, and 132B.

On the other hand, for example, a conductive substrate having the first alloy wiring layer and the second alloy wiring layer shown in Fig. 4 can be formed from the laminate substrate shown in Fig. 2B.

The case of using the laminate substrate of Fig. 2B is explained as an example.

First, the copper layer 12A, the first alloy layer 13A, and the second alloy layer 132A on the side of one surface 11a of the transparent substrate 11 are divided into a plurality of The line-shaped patterns are etched so as to be arranged at predetermined intervals along the X-axis direction. On the other hand, the Y-axis direction in Fig. 2B means a direction perpendicular to the paper surface. The X-axis direction in Fig. 2B means a direction parallel to the width direction of each layer.

The copper layer 12B, the first alloy layer 131B and the second alloy layer 132B on the side of the other surface 11b of the transparent substrate 11 are covered with a plurality Are patterned so as to be arranged at predetermined intervals along the Y-axis direction.

By the above operation, the conductive substrate having the mesh pattern wiring patterns shown in Figs. 3 and 4 can be formed. On the other hand, both sides of the transparent substrate 11 can be etched simultaneously. That is, etching of the copper layers 12A and 12B, the first alloy layers 131A and 131B, and the second alloy layers 132A and 132B may be simultaneously performed.

The conductive substrate having the mesh-shaped wiring pattern shown in Fig. 3 can also be formed by using two laminate substrates shown in Figs. 1A and 2A. 2A, the copper layer 12, the first alloy layer 131, and the second alloy layer 132 are formed on two conductive substrates shown in FIG. 2A, and the copper layer 12, the first alloy layer 131, And a plurality of linear patterns parallel to the axial direction are arranged so as to be arranged at predetermined intervals along the Y-axis direction. Then, the two conductive substrates are bonded together by aligning the line patterns formed on the respective conductive substrates so as to cross each other by the etching process, so that the conductive substrate having the mesh-shaped wiring pattern can be obtained. The surface to which the two conductive substrates are pasted when pasted together is not particularly limited.

For example, the structure shown in Fig. 4 can be obtained by bonding the surfaces 11b on which the copper layer 12 and the like are not laminated in the transparent substrate 11 in Fig. 2A to two conductive substrates .

In FIGS. 3 and 4, an example in which the mesh-shaped wiring pattern is formed by combining linear metal wires is described. However, the shape is not limited to this, and the metal wires constituting the wiring pattern may be arbitrarily shaped . For example, the shapes of the metal thin wires constituting the mesh-shaped wiring pattern may be various shapes such as jagged lines (zigzag lines) or the like so as to prevent moiré (interference fringes) from occurring with the display image .

On the other hand, the width of the metal thin wire and the distance between the metal thin wires in the conductive substrate having the mesh wiring pattern shown in Fig. 3 are not particularly limited and can be selected depending on the electrical resistance value required for the metal thin wire, for example.

The copper interconnection layer and the alloy interconnection layer of the conductive substrate of the present embodiment can maintain the characteristics of the copper layer and the alloy layer of the above-described laminate substrate.

Therefore, as described above, it is preferable that the proportion of nickel in the metal component contained in the alloy wiring layer, that is, the metal component contained in the alloy constituting the alloy wiring layer, is 10 mass% or more and 25 mass% or less. On the other hand, the ratio of nickel indicates the proportion of nickel when the total amount of the metal components in the alloy constituting the alloy wiring layer is 100 mass%.

Specifically, for example, when the alloy wiring layer contains only copper and nickel as metal components, it is preferable that the content of nickel is within the above range when the total content of copper and nickel is 100 mass%.

Further, the alloy wiring layer may contain copper, nickel and zinc. That is, the alloy constituting the alloy wiring layer may contain zinc in addition to copper and nickel.

When the alloy constituting the alloy wiring layer further contains zinc, the proportion of nickel in the metal component contained in the alloy wiring layer is preferably 10 mass% or more and 25 mass% or less, and the proportion of zinc is preferably 10 mass% or more and 30 mass% or less . That is, when the total content of the metal components in the alloy constituting the alloy wiring layer is 100 mass%, the proportion of nickel is preferably 10 mass% or more and 25 mass% or less, and the proportion of zinc is preferably 10 mass% or more and 30 mass% or less Do.

On the other hand, in this case, the total of the metal components in the alloy constituting the alloy wiring layer means, for example, the total content of copper, nickel and zinc.

In the L * a * b * colorimetric system, the chromaticity a * and the lightness L * of the alloy wiring layer of the conductive substrate of the present embodiment are, for example, those in which a * of light having a wavelength of 380 nm or more and 780 nm or less is 9 or less and L * Is preferably 80 or more. This is because when the a * of the light having a wavelength of 380 nm or more and 780 nm or less in the alloy wiring layer is 9 or less and the L * is 80 or more, even when used as a conductive substrate for a reflective display such as an electronic paper, Can be greatly suppressed.

The conductive substrate of the present embodiment described above, that is, for example, a conductive substrate having a mesh-shaped wiring pattern composed of two wiring layers is preferably a conductive type substrate of a projection type capacitance type electronic paper Can be used as a conductive substrate for a reflective display.

(A laminate substrate manufacturing method, a conductive substrate manufacturing method)

Next, a structural example of a method of manufacturing a laminated substrate of the present embodiment will be described.

The laminate substrate manufacturing method of the present embodiment may have a transparent substrate preparation step of preparing a transparent substrate and a laminate forming step of forming a laminate on at least one side of the transparent substrate.

The step of forming the laminate includes a copper layer forming step of forming a copper layer by a copper layer forming means for depositing copper and an alloy layer forming step of depositing an alloy layer containing copper and nickel, And an alloy layer forming step for forming a film.

The alloy layer forming step is preferably performed in a reduced-pressure atmosphere. Further, it is preferable that the proportion of nickel in the metal component contained in the alloy layer is 10 mass% or more and 25 mass% or less.

Hereinafter, a method of manufacturing a laminate substrate according to the present embodiment will be described, but the same structure as that of the above-described laminate substrate can be used, except for the points described below.

As described above, in the laminated substrate of the present embodiment, the order of lamination when the copper layer and the alloy layer are arranged on the transparent substrate is not particularly limited. Further, the copper layer and the alloy layer may be formed of a plurality of layers, respectively. Therefore, the order of performing the copper layer forming step and the alloy layer forming step, the number of times of execution, and the like are not particularly limited, and can be carried out at an arbitrary number of times in accordance with the structure of the laminate substrate to be formed.

The step of preparing a transparent substrate is a step of preparing a transparent substrate composed of, for example, a polymer film or a glass substrate that transmits visible light, and the specific operation is not particularly limited. For example, it can be cut to any size as needed to provide for each subsequent step or step. On the other hand, as the polymer film for transmitting visible light, those which can be suitably used have been described above, so that the explanation thereof is omitted here.

Next, the laminate forming process will be described. The laminate forming step is a step of forming a laminate on at least one side of the transparent substrate and has a copper layer forming step and an alloy layer forming step. Each step is described below.

First, the copper layer forming step will be described.

In the copper layer forming step, the copper layer can be formed on at least one side of the transparent substrate by copper layer film forming means for depositing copper.

In the copper layer forming step, it is preferable to form the copper thin film layer by the dry plating method. When the copper layer is made thicker, it is preferable to further form a copper plating layer by a wet plating method after forming a copper thin film layer by a dry plating method.

Thus, the copper layer forming step may have, for example, a copper thin film layer forming step of forming a copper thin film layer by a dry plating method. The copper layer forming step may have a copper thin film layer forming step of forming a copper thin film layer by a dry plating method and a copper plating layer forming step of forming a copper plating layer by a wet plating method using the copper thin film layer as a power supply layer.

Therefore, the copper layer film forming means described above is not limited to one film forming means, and a plurality of film forming means may be used in combination.

As described above, it is preferable to form a copper layer by a dry plating method or a combination of a dry plating method and a wet plating method, whereby a copper layer can be formed directly on a transparent substrate or an alloy layer without passing an adhesive.

The dry plating method is not particularly limited, but preferably a sputtering method, an ion plating method, a vapor deposition method, or the like can be used in a reduced pressure atmosphere.

Particularly, in the dry plating method used for forming the copper thin film layer, the sputtering method is more preferable because it is easy to control the film thickness. That is, in this case, preferably, the sputtering film forming means (sputtering film forming method) can be used as the copper layer film forming means for depositing copper in the copper layer forming step.

The copper thin film layer can be appropriately formed as necessary by using, for example, a roll to roll sputtering apparatus 50 shown in Fig. Hereinafter, the step of forming the copper foil layer will be described by taking, as an example, the case of using a roll-to-roll sputtering apparatus.

Fig. 5 shows an example of the structure of the roll-to-roll sputtering apparatus 50. Fig. The roll-to-roll sputtering apparatus 50 is provided with a case 51 for housing most of its constituent parts. 5, the shape of the case 51 is shown as a rectangular parallelepiped shape. However, the shape of the case 51 is not particularly limited, and any shape can be adopted depending on the apparatus to be accommodated therein, the installation place, and the pressure resistance performance. For example, the shape of the case 51 may be a cylindrical shape. However, it is preferable that the inside of the case 51 can be reduced to 1 Pa or less, more preferably 10 -3 Pa or less, and more preferably 10- It is more preferable that the pressure can be reduced to 4 Pa or less. On the other hand, it is not necessary that the entire interior of the case 51 can be reduced to the above-mentioned pressure, and only the lower region in the drawing where the can roll (to be described later) .

In the case 51, an unwinding roll 52, a can roll 53, sputtering cathodes 54a to 54d, a front feed roll 55a, a rear feed roll 55a for feeding a base material for forming a copper thin film layer, The tension rolls 55a, 55b, the tension rolls 56a, 56b, and the winding roll 57 can be disposed. Guide rolls 58a to 58h, a heater 59 and the like may be optionally provided on the conveying path of the base material on which the copper thin film layer is to be formed, in addition to the rolls described above.

Power can be provided to the unwinding roll 52, the can roll 53, the front feed roll 55a, and the winding roll 57 by the servomotor. In the unwinding roll 52 and the winding roll 57, the tension balance of the base material on which the copper foil layer is to be formed is maintained by the torque control by the powder clutch or the like.

The configuration of the can roll 53 is not particularly limited. For example, the surface of the can roll 53 is treated with hard chrome plating, and a refrigerant or hot water supplied from the outside of the case 51 is circulated therein, As shown in FIG.

It is preferable that the tension rolls 56a and 56b are, for example, treated with hard chrome plating on their surfaces and equipped with a tension sensor. It is also preferable that the surface of the front feed roll 55a, the rear feed roll 55b, the guide rolls 58a to 58h, etc. is treated with hard chrome plating.

The sputtering cathodes 54a-54d are preferably disposed in opposition to the can roll 53 in a magnetron cathode fashion. Although the size of the sputtering cathodes 54a to 54d is not particularly limited, the widthwise dimension of the substrate on which the copper foil layer is to be formed in the sputtering cathodes 54a to 54d is preferably larger than the width of the substrate on which the opposite copper foil layer is to be formed desirable.

The substrate on which the copper thin film layer is to be formed is transported into a roll-to-roll sputtering apparatus 50 which is a roll-to-roll vacuum film forming apparatus and a copper thin film layer is formed on the sputtering cathodes 54a to 54d opposite to the can roll 53.

A method of forming the copper foil layer using the roll-to-roll sputtering apparatus 50 will be described.

First, the copper target is attached to the sputtering cathodes 54a to 54d, and the inside of the case 51 in which the base material on which the copper foil layer is to be formed is set on the unwinding roll 52 is evacuated by the vacuum pumps 60a and 60b.

Thereafter, an inert gas, for example, a sputtering gas such as argon is introduced into the case 51 by the gas supplying means 61. On the other hand, the configuration of the gas supply means 61 is not particularly limited, but it may have a gas storage tank (not shown). Mass flow controllers (MFCs) 611a and 611b and valves 612a and 612b are provided for each gas species between the gas storage tank and the case 51 so that each gas is supplied into the case 51 And the like. 5 shows an example in which two sets of mass flow controllers and valves are provided. However, the number of the mass flow controllers and the number of valves is not particularly limited, and the number of gas flow controllers and valves may be selected depending on the number of gas species used.

When the sputtering gas is supplied into the case 51 by the gas supplying means 61, the flow rate of the sputtering gas and the opening of the pressure adjusting valve 62 provided between the vacuum pump 60b and the case 51 It is preferable that the film is formed while the case is maintained at 0.13 Pa or more and 1.3 Pa or less, for example.

In this state, electric power is supplied from the sputtering DC power source connected to the sputtering cathodes 54a to 54d while conveying the substrate from the unwinding roll 52 at a speed of 1 m to 20 m per minute, for example, to perform sputtering discharge do. Thereby, a desired copper thin film layer can be continuously formed on the substrate.

On the other hand, in the roll-to-roll sputtering apparatus 50, various members can be arranged as necessary in addition to the above-described ones. For example, pressure gauges 63a and 63b for measuring the pressure in the case 51, vent valves 64a and 64b, and the like may be provided.

Further, after the dry plating as described above, a copper layer (copper plating layer) can be further formed by wet plating.

When the copper plating layer is formed by the wet plating method, the copper thin film layer formed by the dry plating described above can be used as the power supply layer. In this case, preferably, the electroplating film forming means may be used as the copper layer film forming means for depositing copper in the copper layer forming step.

The conditions in the step of forming the copper plating layer by the wet plating method using the copper thin film layer as the power supply layer, that is, the electroplating treatment conditions, are not particularly limited, and the conditions according to the ordinary method may be employed. For example, a copper plating layer can be formed by supplying a substrate on which a copper thin film layer is formed to a plating bath containing a copper plating solution and controlling the current density, the substrate conveying speed, and the like.

Next, the alloy layer forming step will be described.

The alloy layer forming step is a step of forming an alloy layer by an alloy layer film forming means for forming an alloy layer containing copper and nickel on at least one side of the transparent substrate as described above. The alloy layer forming means for depositing an alloy layer containing copper and nickel in the alloy layer forming step is not particularly limited, but is preferably, for example, a sputtering film forming means under a reduced pressure atmosphere, that is, a sputtering film forming method.

The alloy layer can be appropriately formed as required, for example, by using the roll-to-roll sputtering apparatus 50 shown in Fig. Since the configuration of the roll-to-roll sputtering apparatus has been described above, the description is omitted here.

A configuration example of a method of forming an alloy layer using the roll-to-roll sputtering apparatus 50 will be described.

First, for example, a case 51 in which a copper-nickel alloy target is mounted on the sputtering cathodes 54a to 54d and a substrate on which an alloy layer is to be formed is set on the unwinding roll 52 is placed in a vacuum pump 60a ). Thereafter, a sputtering gas composed of an inert gas, for example, argon, is introduced into the case 51 by the gas supplying means 61. At this time, the flow rate of the sputtering gas and the opening degree of the pressure regulating valve 62 provided between the vacuum pump 60b and the case 51 are adjusted to set the inside of the case 51 to 0.13 Pa or more and 13 Pa or less And the film is preferably formed.

In this state, electric power is supplied from a sputtering DC power source connected to the sputtering cathodes 54a to 54d while conveying the base material from the unwinding roll 52 at a speed of 0.5 m to 10 m per minute, for example, . Thereby, a desired alloy layer can be continuously formed on the substrate.

On the other hand, as described above, the alloy layer may contain copper and nickel, and the proportion of nickel in the metal components contained in the alloy layer is preferably 10 mass% or more and 25 mass% or less.

The alloy layer may contain copper, nickel and zinc, and when the alloy layer further contains zinc, the proportion of nickel in the metal component contained in the alloy layer is 10% by mass or more and 25% by mass or less, The ratio is preferably 10 mass% or more and 30 mass% or less.

Therefore, the target used in forming the alloy layer is not limited to the above-described copper-nickel alloy target, and a target that matches the composition of the alloy layer to be formed can be used. For example, a copper-nickel-zinc alloy target containing more zinc may be used.

Up to this point, the respective steps and steps included in the laminate substrate manufacturing method of this embodiment have been described.

The laminate substrate obtained by the laminate substrate manufacturing method of the present embodiment preferably has a thickness of 50 nm or more, more preferably 60 nm or more, and more preferably 150 nm or more as the copper layer similarly to the above- desirable. The upper limit value of the copper layer thickness is not particularly limited, but the thickness of the copper layer is preferably 5000 nm or less, more preferably 3000 nm or less. On the other hand, when the copper layer has the copper thin film layer and the copper plating layer as described above, it is preferable that the total thickness of the copper thin film layer and the copper plating layer is in the above range.

The thickness of the alloy layer is not particularly limited, but is preferably 10 nm or more, for example, and more preferably 15 nm or more. The upper limit value of the alloy layer thickness is not particularly limited, but is preferably 70 nm or less, more preferably 50 nm or less.

A laminated substrate obtained by the method of producing a laminated body substrate of the present embodiment can be used to form a conductive substrate in which wiring patterns having openings are formed in the copper layer and the alloy layer. More preferably, the conductive substrate may be provided with a mesh-shaped wiring pattern.

The conductive substrate manufacturing method of the present embodiment is a method of manufacturing a conductive substrate by etching a copper layer and an alloy layer of a laminate substrate obtained by the above-described method of producing a laminate substrate to form a wiring pattern having a metal thin wire as a laminate having a copper wiring layer and an alloy wiring layer An etching process may be performed. Openings can be formed in the copper layer and the alloy layer by this etching process.

In the etching step, for example, first, a resist having an opening corresponding to a portion to be removed by etching is formed on the outermost surface of the laminate substrate. For example, in the case of the laminate substrate shown in Fig. 2A, a resist can be formed on the exposed surface A of the second alloy layer 132 disposed on the laminate substrate. On the other hand, a method of forming a resist having an opening corresponding to a portion to be removed by etching is not particularly limited, but can be formed by, for example, photolithography.

Then, the copper layer 12, the first alloy layer 131 and the second alloy layer 132 can be etched by supplying an etching liquid from the upper surface of the resist.

On the other hand, when a copper layer and an alloy layer are disposed on both surfaces of the transparent substrate 11 as shown in FIG. 2B, a resist having openings of a predetermined shape is formed on the surface A and the surface B of the laminate substrate And the copper layer and the alloy layer formed on both sides of the transparent substrate 11 may be simultaneously etched. The copper layer and the alloy layer formed on both surfaces of the transparent substrate 11 may be etched one by one. That is, for example, after the copper layer 12A, the first alloy layer 131A, and the second alloy layer 132A are etched, the copper layer 12B, the first alloy layer 131B, (132B) may be etched.

The etching solution used in the etching process is not particularly limited, and an etching solution generally used for etching the copper layer can be used.

More preferably, the etching solution used in the etching process includes two or more selected from an aqueous solution containing one selected from sulfuric acid, hydrogen peroxide solution, hydrochloric acid, cupric chloride and ferric chloride, or sulfuric acid and the like Can be used. The content of each component in the etching solution is not particularly limited.

The etching solution may be used at room temperature, but the etching solution may be used at a higher temperature to enhance the reactivity. For example, it can be used by heating to 40 ° C or more and 50 ° C or less.

Since the concrete shape of the mesh-shaped wiring pattern obtained by the above-described etching process is the same as described above, the description is omitted here.

Further, two laminate substrates having a copper layer and an alloy layer on one side of the transparent substrate 11 shown in Figs. 1A and 2A are provided in the etching step to form a conductive substrate, and then two conductive substrates are bonded In the case of forming a conductive substrate having a mesh-shaped wiring pattern, a step of pasting the conductive substrate may be further provided. At this time, the method of bonding the two conductive substrates is not particularly limited, and for example, it can be bonded by using optical adhesive (OCA) or the like.

On the other hand, the conductive substrate obtained by the method for producing a conductive substrate of the present embodiment is characterized in that in the L * a * b * colorimetric system, a * of light having a wavelength of 380 nm or more and 780 nm or less in the alloy wiring layer is 9 or less, Is preferable.

This is because when the a * of the light having a wavelength of 380 nm or more and 780 nm or less in the alloy wiring layer is 9 or less and the L * is 80 or more, for example, even when used as a conductive substrate for a reflective display such as an electronic paper, It can be greatly suppressed. Further, when a * is more than 9, it is visually unfavorable because a red group is formed.

The laminate substrate, the conductive substrate, the laminate substrate manufacturing method, and the conductive substrate manufacturing method of the present embodiment have been described above. According to the laminate substrate obtained by such a laminate substrate or a laminate substrate manufacturing method, reflection of long wavelength light by the copper layer can be suppressed by providing an alloy layer.

Further, when such a laminated substrate is used as a conductive substrate for a reflective display such as an electronic paper, deterioration of the visibility of the display can be suppressed. Thus, a conductive substrate having good visibility can be obtained.

[Example]

Hereinafter, the present invention will be described in more detail with reference to examples and comparative examples of the present invention, but the present invention is not limited to these examples.

(Assessment Methods)

A * and L * were measured for the laminate substrates produced in each of the following Examples and Comparative Examples.

The measurement was carried out by installing an integrating sphere attachment device on an ultraviolet visible spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2600).

In each of the examples, a laminate substrate having the structure shown in Fig. 2A was manufactured. The reflectance was measured with respect to the surface A exposed to the outside of the second alloy layer 132 in Fig. 2A, 780 nm or less. On the other hand, in the light irradiated to the laminate substrate, the wavelength was measured in the wavelength range of 380 nm to 780 nm with respect to the light of each wavelength while changing the wavelength by 1 nm. Then a * and L * of the conductive substrate were calculated from the measured reflectance.

(Conditions for producing samples)

As a comparative example, a laminate substrate was produced under the conditions described below and evaluated by the evaluation method described above.

[Example 1]

A laminate substrate having the structure shown in Fig.

First, a transparent substrate preparation step was performed.

Specifically, a transparent substrate made of polyethylene terephthalate resin (PET) for optical use having a width of 500 mm and a thickness of 100 탆 was prepared.

Then, a laminate forming process was carried out.

The first alloy layer forming step, the copper layer forming step and the second alloy layer forming step were carried out as the laminate forming step. This will be described in detail below.

First, the first alloy layer forming step was performed.

The prepared transparent substrate was set on the roll-to-roll sputtering apparatus 50 shown in Fig. A copper-10 mass% Ni alloy target (manufactured by Sumitomo Metal Mining Co., Ltd.) was mounted on the sputtering cathodes 54a and 54b.

Then, the heater 59 of the roll-to-roll sputtering apparatus 50 was heated to 100 캜 to heat the transparent substrate to remove moisture contained in the substrate.

Subsequently, the inside of the case 51 is evacuated to 1 x 10 < -4 > Pa by the vacuum pumps 60a and 60b, and then the argon gas is supplied to the case 51 ). While the transparent base material is being conveyed at a speed of 2 m / minute from the unwinding roll 52, power is supplied from the sputtering DC power source connected to the sputtering cathodes 54a to 54d to perform sputtering discharge, Alloy layer was continuously formed. By this operation, a first alloy layer 131 having a thickness of 20 nm was formed on the transparent substrate.

A copper layer formation step was then carried out.

In the copper layer forming step, in the same manner as in the case of the first alloy layer, except that the target to be attached to the sputtering cathode was changed to a copper target (manufactured by Sumitomo Metal Mine Co., Ltd.) Copper layer was formed.

On the other hand, as the base material for forming the copper layer, a base material having a first alloy layer formed on a transparent base material in the first alloy layer forming step was used.

Then, a second alloy layer forming step was performed.

In the second alloy layer forming step, a second alloy layer 132 is formed on the upper surface of the copper layer 12 under the same conditions as the first alloy layer 131 (see FIG. 2A).

A * and L * of light having a wavelength of 380 nm or more and 780 nm or less were measured and calculated by the above-described method, and a * and a L * of light having a wavelength of 380 nm or more and 780 nm or less, respectively, 85.

The evaluation results are shown in Table 1.

[Examples 2 to 6]

A laminate substrate was prepared and evaluated in the same manner as in Example 1 except that the composition of the sputtering target used in forming the first and second alloy layers was changed as shown in Table 1. [

The results are shown in Table 1.

[Comparative Example 1, Comparative Example 2]

A laminate substrate was prepared and evaluated in the same manner as in Example 1 except that the composition of the sputtering target used in forming the first and second alloy layers was changed as shown in Table 1. [

The results are shown in Table 1.

According to the results shown in Table 1, in Examples 1 to 4, the proportion of nickel in copper and nickel, which are metal components included in the sputtering target used for forming the alloy layer, is 10% by mass or more and 25% by mass or less . In Examples 5 and 6, the proportion of nickel in copper, nickel, and zinc among the metal components contained in the sputtering target used in forming the alloy layer was 10 mass% or more and 25 mass% or less. The composition of the deposited alloy layer is also the same. Thus, it was confirmed that in the L * a * b * colorimetric system, a * of light having a wavelength of 380 nm or more and 780 nm or less in the alloy layer was 9 or less and L * was 80 or more. Therefore, when such a laminate substrate is subjected to wiring processing by etching to form a conductive substrate and a conductive substrate for a reflective display such as an electronic paper is used, the visibility of the display can be greatly improved.

On the other hand, in the comparative example 1, the ratio of nickel in copper and nickel, which is a metal component contained in the sputtering target used for forming the alloy layer, is less than 10% by mass, Respectively. Further, in Comparative Example 2, the ratio of nickel in copper to nickel contained in the sputtering target used in forming the alloy layer exceeded 25% by mass, and the composition of the alloy layer thus formed was the same, so that L * was less than 80%.

Therefore, when the laminated substrate produced in Comparative Example 1 and Comparative Example 2 is subjected to wiring processing by etching to form a conductive substrate and a conductive substrate for a reflective display such as an electronic paper, the visibility of the display is lowered.

Although the laminate substrate, the conductive substrate, the laminate substrate manufacturing method, and the conductive substrate manufacturing method have been described above with reference to the embodiments and the examples, the present invention is not limited to the embodiments and examples. Various changes and modifications may be made without departing from the scope of the present invention described in the claims.

The present application claims priority to U.S. Patent Application No. 2015-234107, filed on November 30, 2015, and U.S. Patent Application No. 2016-022265, filed on February 8, 2016, 2015-234107 and < RTI ID = 0.0 > Specification < / RTI > 2016-022265.

10A, 10B, 20A and 20B laminated substrate
11 transparent substrate
12, 12A, 12B copper layer
13, 13A, 13B, 131, 132, 131A, 131B, 132A, 132B alloy layer
30 conductive substrate
31A and 31B copper wiring layers
321A, 321B, 322A, 322B alloy wiring layers

Claims (13)

A transparent substrate,
And a laminate formed on at least one side of the transparent substrate,
In the laminate,
An alloy layer containing copper and nickel,
Copper layer,
Wherein a ratio of nickel in the metal component contained in the alloy layer is 10 mass% or more and 25 mass% or less. The method according to claim 1,
Wherein the alloy layer comprises copper, nickel and zinc,
Wherein the proportion of nickel in the metal component contained in the alloy layer is 10 mass% or more and 25 mass% or less, and the proportion of zinc is 10 mass% or more and 30 mass% or less. 3. The method according to claim 1 or 2,
Wherein the laminate includes a first alloy layer and a second alloy layer as the alloy layer,
And the copper layer is disposed between the first alloy layer and the second alloy layer. 4. The method according to any one of claims 1 to 3,
Wherein a * in light of wavelength of 380 nm or more and 780 nm or less in the L * a * b * colorimetric system is 9 or less and L * is 80 or more in the alloy layer. A transparent substrate,
And a metal thin wire formed on at least one side of the transparent substrate,
The thin metal wire
An alloy wiring layer containing copper and nickel,
And a copper wiring layer,
Wherein a ratio of nickel in the metal component contained in the alloy wiring layer is 10 mass% or more and 25 mass% or less. 6. The method of claim 5,
Wherein the alloy wiring layer comprises copper, nickel and zinc,
Wherein a proportion of nickel is 10 mass% or more and 25 mass% or less and a proportion of zinc is 10 mass% or more and 30 mass% or less among the metal components contained in the alloy wiring layer. The method according to claim 5 or 6,
Wherein the metal thin wire includes a first alloy wiring layer and a second alloy wiring layer as the alloy wiring layer,
And the copper wiring layer is disposed between the first alloy wiring layer and the second alloy wiring layer. A transparent substrate preparation step of preparing a transparent substrate,
A step of forming a laminate on at least one side of the transparent substrate,
In the laminate forming step,
A copper layer forming step of forming a copper layer by copper layer film forming means for depositing copper;
An alloy layer forming step of forming an alloy layer by an alloy layer film forming means for depositing an alloy layer containing copper and nickel,
Wherein the alloy layer forming step is performed in a reduced pressure atmosphere, and the ratio of nickel in the metal component contained in the alloy layer is 10 mass% to 25 mass%. 9. The method of claim 8,
Wherein the alloy layer comprises copper, nickel and zinc,
Wherein a proportion of nickel is 10 mass% or more and 25 mass% or less and a proportion of zinc is 10 mass% or more and 30 mass% or less among the metal components contained in the alloy layer. 10. The method according to claim 8 or 9,
Wherein said alloy layer film-forming means is a sputtering film-forming method. 11. The method according to any one of claims 8 to 10,
Wherein the alloy layer has a thickness of 10 nm or more. Etching the copper layer and the alloy layer of the laminate substrate obtained by the method of manufacturing a laminate substrate according to any one of claims 8 to 11 to form a metal thin wire as a laminate having a copper wiring layer and an alloy wiring layer And an etching step of forming a wiring pattern,
And an opening is formed in the copper layer and the alloy layer by the etching process. 13. The method of claim 12,
A * of light having a wavelength of 380 nm or more and 780 nm or less in the alloy wiring layer in the L * a * b * colorimetric system is 9 or less and L * is 80 or more.

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