JP2003151358A - Transparent conductive film and touch panel - Google Patents
Transparent conductive film and touch panelInfo
- Publication number
- JP2003151358A JP2003151358A JP2001351800A JP2001351800A JP2003151358A JP 2003151358 A JP2003151358 A JP 2003151358A JP 2001351800 A JP2001351800 A JP 2001351800A JP 2001351800 A JP2001351800 A JP 2001351800A JP 2003151358 A JP2003151358 A JP 2003151358A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- metal oxide
- film
- film made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、タッチパネルおよ
び、タッチパネルの上部または下部電極として有用な透
明導電性フィルムと、透明導電性フィルムの製造方法に
関する。TECHNICAL FIELD The present invention relates to a touch panel, a transparent conductive film useful as an upper or lower electrode of the touch panel, and a method for producing the transparent conductive film.
【０００２】[0002]
【従来の技術】指で押したり、専用ペンで描画したりす
ると、その部分が対面電極と接触し、通電して信号が入
力される抵抗膜式タッチパネルは、小型、軽量、薄型化
に有利であることから、各種の家電製品や携帯端末の入
力機器として広く用いられている。2. Description of the Related Art A resistive touch panel, which is pressed by a finger or drawn with a dedicated pen, comes into contact with a facing electrode at that portion and a signal is input when electricity is applied, is advantageous in reducing size, weight and thickness. Therefore, it is widely used as an input device for various home appliances and mobile terminals.
【０００３】抵抗膜式タッチパネルは、ガラスやプラス
チックなどの厚さの大きい基板上に透明電極を形成して
なる下部電極の上に、高分子フィルムにアンダーコート
層、透明導電膜を形成してなる上部電極を、透明導電膜
が対面するようにスペーサー(マイクロドットスペーサ
ー）を介して積層したものであり、上部電極の表示面を
指やペンで押すと、上部電極と下部電極とが接触して通
電し、信号が入力される。なお、上部電極の表面には、
基材高分子フィルムの保護のためにハードコート層が設
けられている。A resistive film type touch panel is formed by forming an undercoat layer and a transparent conductive film on a polymer film on a lower electrode formed by forming a transparent electrode on a substrate having a large thickness such as glass or plastic. The upper electrode is laminated with spacers (microdot spacers) so that the transparent conductive films face each other.When the display surface of the upper electrode is pressed with a finger or a pen, the upper electrode and the lower electrode come into contact with each other. Power is turned on and a signal is input. In addition, on the surface of the upper electrode,
A hard coat layer is provided to protect the base polymer film.
【０００４】このようなタッチパネルに使用できる透明
導電膜として、例えば、特開昭６０−１３１７１１号公
報には、有機ケイ素化合物をアンダーコート層として使
用し、透明導電膜の機械的、化学的耐久性を向上させる
ために熱処理（アニール）を行った透明導電膜が記載さ
れている。また、特開平２−６６８０９号公報には、基
材／粘着剤／基材／透明導電層の積層体が記載され、粘
着剤によって応力を緩和された透明導電膜が記載されて
いる。As a transparent conductive film that can be used in such a touch panel, for example, in JP-A-60-131711, an organic silicon compound is used as an undercoat layer, and the mechanical and chemical durability of the transparent conductive film is improved. It describes a transparent conductive film that has been heat-treated (annealed) to improve the temperature. Further, JP-A-2-66809 describes a laminate of substrate / adhesive / substrate / transparent conductive layer, and describes a transparent conductive film whose stress is relaxed by the adhesive.
【０００５】しかし、上記公報に記載されている上部電
極と下部電極が同種の透明導電膜を用いたタッチパネル
では、上部電極に用いる高分子フィルム上の透明導電膜
の耐擦傷性が充分でなく、耐久性に乏しい。However, in the touch panel described in the above publication, in which the upper electrode and the lower electrode use the same kind of transparent conductive film, the scratch resistance of the transparent conductive film on the polymer film used for the upper electrode is not sufficient, Poor durability.
【０００６】タッチパネル用途の電極において上記のよ
うな耐久性を向上させる目的で、特開平２−１９４９４
３号公報には、ＩＴＯ(酸化スズ−酸化インジウム酸化
物）透明導電膜を成膜した後、熱処理を施してＩＴＯを
結晶化させることが記載されているが、電極の基材が高
分子フィルムであるため、この熱処理温度にも限界があ
り、１５０℃という比較的低い温度で比較的長時間での
熱処理が必要となり、生産性、コストの面で問題があっ
た。For the purpose of improving the durability as described above in an electrode for a touch panel, JP-A-2-19494 is used.
Japanese Patent Publication No. 3 describes that an ITO (tin oxide-indium oxide oxide) transparent conductive film is formed and then heat-treated to crystallize ITO, but the base material of the electrode is a polymer film. Therefore, there is a limit to the heat treatment temperature, and heat treatment at a relatively low temperature of 150 ° C. for a relatively long time is required, resulting in problems in productivity and cost.
【０００７】[0007]
【発明が解決しようとする課題】本発明者等は、上部電
極と下部電極の耐久性を向上させるため鋭意検討したと
ころ、上部電極と下部電極が同種の透明導電膜では、上
部電極と下部電極の間で融着が生じ、ペンや指の入力を
繰り返すうちに経時的にひび割れや高分子フィルムから
の剥離、脱落が生じることを見出した。このような損傷
により電気抵抗値均一性などの電気特性が失われ、優れ
た耐久性が得られない。The inventors of the present invention have conducted extensive studies to improve the durability of the upper electrode and the lower electrode, and found that in the case of a transparent conductive film in which the upper electrode and the lower electrode are the same, the upper electrode and the lower electrode are formed. It has been found that fusion occurs between them, and cracks, peeling from the polymer film, and falling off occur over time with repeated input with a pen or finger. Due to such damage, electrical characteristics such as uniformity of electrical resistance value are lost, and excellent durability cannot be obtained.
【０００８】本発明は、このような問題を解決し、長期
間の使用においても透明導電膜の損傷がなく、耐久性に
優れ、かつ簡易に製造できる透明導電性フィルムを提供
することを目的とする。An object of the present invention is to solve the above problems and to provide a transparent conductive film which does not damage the transparent conductive film even when used for a long period of time, has excellent durability, and can be easily manufactured. To do.
【０００９】[0009]
【発明を解決するための手段】本発明は、高分子フィル
ムに、一般的な金属酸化物膜を設けた後に、成膜条件を
変更し、表面粗さあるいは酸素含有率または窒素含有率
が異なる金属酸化物膜をその上に成膜することによっ
て、上部電極と下部電極の融着を防止することができ、
すぐれた機械特性を有し、金属酸化物膜の剥離、脱落の
ない耐摺動性に富んだ透明導電性フィルムにある。According to the present invention, after a general metal oxide film is provided on a polymer film, the film forming conditions are changed so that the surface roughness or the oxygen content or the nitrogen content is different. By forming a metal oxide film on it, it is possible to prevent fusion between the upper electrode and the lower electrode,
It is a transparent conductive film that has excellent mechanical properties and has excellent sliding resistance without peeling or falling of the metal oxide film.
【００１０】即ち、本発明は、高分子フィルムおよびそ
の上に気相成膜法により設けられた金属酸化物からなる
透明導電膜を含む透明導電性フィルムであって、金属酸
化物からなる透明導電膜が、第一の金属酸化物からなる
透明導電膜およびその上に設けられた第二の金属酸化物
からなる透明導電膜からなり、かつ第二の金属酸化物か
らなる透明導電膜が第一の金属酸化物からなる透明導電
膜の成膜条件と異なる条件で形成されていることを特徴
とする透明導電性フィルムにある。That is, the present invention is a transparent conductive film comprising a polymer film and a transparent conductive film made of a metal oxide provided thereon by a vapor phase film forming method, the transparent conductive film made of a metal oxide. The film is a transparent conductive film made of a first metal oxide and a transparent conductive film made of a second metal oxide provided thereon, and a transparent conductive film made of a second metal oxide is a first conductive film. The transparent conductive film is formed under the conditions different from the film forming conditions of the transparent conductive film made of the metal oxide.
【００１１】金属酸化物からなる透明導電膜がＩＴＯ膜
である、上記のフィルムが好ましい。The above-mentioned film is preferable, in which the transparent conductive film made of a metal oxide is an ITO film.
【００１２】気相成膜法がスパッタリング法である上記
のフィルムが好ましい。The above-mentioned film whose vapor deposition method is a sputtering method is preferable.
【００１３】気相成膜法が反応性スパッタリング法であ
る上記のフィルムが好ましい。The above-mentioned film whose vapor deposition method is a reactive sputtering method is preferred.
【００１４】気相成膜法で使用されるターゲット材料と
して酸化インジウム−酸化スズ混合焼結セラミックター
ゲットが使用されていることを特徴とする上記のフィル
ムが好ましい。The above-mentioned film is preferable, characterized in that an indium oxide-tin oxide mixed sintered ceramic target is used as a target material used in the vapor deposition method.
【００１５】気相成膜法で使用されるターゲット材料と
してインジウム−スズ合金金属ターゲットが使用されて
いることを特徴とする上記のフィルムが好ましい。The above-mentioned film is preferable, which is characterized in that an indium-tin alloy metal target is used as the target material used in the vapor deposition method.
【００１６】第二の金属酸化物からなる透明導電膜が、
第一の金属酸化物からなる透明導電膜と酸素含有率が異
なることを特徴とする上記のフィルムが好ましい。The transparent conductive film made of the second metal oxide is
The above-mentioned film is preferable, which has a different oxygen content from the transparent conductive film made of the first metal oxide.
【００１７】第二の金属酸化物からなる透明導電膜が、
第一の金属酸化物からなる透明導電膜と窒素含有率が異
なることを特徴とする上記のフィルムが好ましい。The transparent conductive film made of the second metal oxide is
The above-mentioned film is preferable, which has a nitrogen content different from that of the transparent conductive film made of the first metal oxide.
【００１８】第二の金属酸化物からなる透明導電膜が、
第一の金属酸化物からなる透明導電膜と結晶状態および
／または表面形状が異なることを特徴とする上記のフィ
ルムが好ましい。The transparent conductive film made of the second metal oxide is
The above-mentioned film is preferable, which is different in crystalline state and / or surface shape from the transparent conductive film made of the first metal oxide.
【００１９】第二の金属酸化物からなる透明導電膜の成
膜に際して、スパッタリング時の圧力が、第一の金属酸
化物からなる透明導電膜の成膜の際の圧力と異なること
を特徴とする上記のフィルムが好ましい。When forming the transparent conductive film made of the second metal oxide, the pressure at the time of sputtering is different from the pressure at the time of forming the transparent conductive film made of the first metal oxide. The films mentioned above are preferred.
【００２０】第二の金属酸化物からなる透明導電膜の成
膜に際して、スパッタリング時の成膜速度が、第一の金
属酸化物からなる透明導電膜の成膜の際の成膜速度と異
なることを特徴とする上記のフィルムが好ましい。When forming the transparent conductive film made of the second metal oxide, the film forming speed at the time of sputtering is different from the film forming speed at the time of forming the transparent conductive film made of the first metal oxide. The above-mentioned films characterized by
【００２１】また本発明は、金属酸化物からなる透明導
電膜が高分子フィルム上に形成された透明導電性フィル
ムであって、金属酸化物からなる透明導電膜が、第一の
金属酸化物からなる透明導電膜およびその上に設けられ
た第二の金属酸化物からなる透明導電膜からなり、かつ
第二の金属酸化物からなる透明導電膜が、第一の金属酸
化物からなる透明導電膜と酸素含有率が異なることを特
徴とする透明導電性フィルムにある。The present invention is also a transparent conductive film in which a transparent conductive film made of a metal oxide is formed on a polymer film, wherein the transparent conductive film made of a metal oxide is formed from a first metal oxide. And a transparent conductive film made of a second metal oxide, and the transparent conductive film made of a second metal oxide is made of a first metal oxide. And a different oxygen content rate.
【００２２】さらに本発明は金属酸化物からなる透明導
電膜が高分子フィルム上に形成された透明導電性フィル
ムであって、金属酸化物からなる透明導電膜が、第一の
金属酸化物からなる透明導電膜およびその上に設けられ
た第二の金属酸化物からなる透明導電膜からなり、かつ
第二の金属酸化物からなる透明導電膜が、第一の金属酸
化物からなる透明導電膜と窒素含有率が異なることを特
徴とする透明導電性フィルムにある。Furthermore, the present invention is a transparent conductive film in which a transparent conductive film made of a metal oxide is formed on a polymer film, wherein the transparent conductive film made of a metal oxide is made of a first metal oxide. A transparent conductive film and a transparent conductive film made of a second metal oxide provided thereon, and a transparent conductive film made of a second metal oxide, and a transparent conductive film made of a first metal oxide. A transparent conductive film having different nitrogen contents.
【００２３】金属酸化物からなる透明導電膜が、ＩＴＯ
膜である上記のフィルムが好ましい。The transparent conductive film made of metal oxide is ITO
The above-mentioned films which are membranes are preferred.
【００２４】また本発明は、第一の金属酸化物からなる
透明導電膜を形成した高分子フィルムを透明基板に貼り
合わせてなる下部電極と、上記の透明導電性フィルム
を、透明導電膜同士を対面させるようにスペーサーを介
して貼り合わせてなるタッチパネルにある。Further, according to the present invention, the lower electrode formed by adhering a polymer film having a transparent conductive film made of a first metal oxide to a transparent substrate, and the above transparent conductive film, the transparent conductive films are connected to each other. It is on a touch panel that is attached via a spacer so as to face each other.
【００２５】さらに高分子フィルム上に気相成膜法によ
り第一の金属酸化物からなる透明導電膜を形成し、当該
第一の金属酸化物からなる透明導電膜の上に成膜条件を
変化させた第二の金属酸化物からなる透明導電膜を形成
することを特徴とする透明導電性フィルムの製造方法に
ある。Further, a transparent conductive film made of the first metal oxide is formed on the polymer film by a vapor phase film forming method, and the film forming conditions are changed on the transparent conductive film made of the first metal oxide. In the method for producing a transparent conductive film, a transparent conductive film made of the second metal oxide is formed.
【００２６】金属酸化物からなる透明導電膜がＩＴＯ膜
である上記の製造方法が好ましい。The above-mentioned manufacturing method in which the transparent conductive film made of a metal oxide is an ITO film is preferable.
【００２７】気相成膜法がスパッタリング法であること
を特徴とする上記の製造方法が好ましい。The above-mentioned manufacturing method is preferable, wherein the vapor phase film forming method is a sputtering method.
【００２８】気相成膜法が反応性スパッタリング法であ
ることを特徴とする上記の製造方法が好ましい。The above-mentioned manufacturing method characterized in that the vapor phase film forming method is a reactive sputtering method is preferable.
【００２９】気相成膜法で使用されるターゲット材料と
して、酸化インジウム−酸化スズ混合焼結セラミックタ
ーゲットを使用することを特徴とする上記の製造方法が
好ましい。As the target material used in the vapor phase film forming method, an indium oxide-tin oxide mixed sintered ceramic target is preferably used.
【００３０】気相成膜法で使用されるターゲット材料と
してインジウム−スズ合金金属ターゲットを使用するこ
とを特徴とする上記の製造方法が好ましい。The above-mentioned manufacturing method characterized in that an indium-tin alloy metal target is used as the target material used in the vapor phase film forming method is preferable.
【００３１】第一の金属酸化物からなる透明導電膜を形
成した後に、酸素含有率が異なる第二の金属酸化物から
なる透明導電膜を形成することを特徴とする上記の製造
方法が好ましい。It is preferable that the above-mentioned manufacturing method is characterized in that after forming the transparent conductive film made of the first metal oxide, the transparent conductive film made of the second metal oxide having a different oxygen content is formed.
【００３２】第一の金属酸化物からなる透明導電膜を形
成した後に、窒素含有率が異なる第二の金属酸化物から
なる透明導電膜を形成することを特徴とする上記の製造
方法が好ましい。It is preferable that the above-mentioned manufacturing method is characterized in that after the transparent conductive film made of the first metal oxide is formed, the transparent conductive film made of the second metal oxide having a different nitrogen content is formed.
【００３３】第一の金属酸化物からなる透明導電膜を形
成した後に、結晶状態および／または表面形状の異なる
第二の金属酸化物からなる透明導電膜を形成することを
特徴とする上記の製造方法が好ましい。The above-mentioned manufacturing method, characterized in that after the transparent conductive film made of the first metal oxide is formed, the transparent conductive film made of the second metal oxide having a different crystalline state and / or surface shape is formed. The method is preferred.
【００３４】第二の金属酸化物からなる透明導電膜の成
膜に際して、スパッタリング時の圧力を第一の金属酸化
物からなる透明導電膜の成膜の際の圧力と異なる値とす
ることを特徴とする上記の製造方法が好ましい。When forming the transparent conductive film made of the second metal oxide, the pressure at the time of sputtering is set to a value different from the pressure at the time of forming the transparent conductive film made of the first metal oxide. The above manufacturing method is preferred.
【００３５】第二の金属酸化物からなる透明導電膜の成
膜に際して、スパッタリング時の成膜速度を第一の金属
酸化物からなる透明導電膜の成膜の際の成膜速度と異な
る値とすることを特徴とする上記の製造方法が好まし
い。When forming the transparent conductive film made of the second metal oxide, the film forming rate at the time of sputtering is different from the film forming rate at the time of forming the transparent conductive film made of the first metal oxide. The above-mentioned manufacturing method is preferable.
【００３６】金属酸化物としては、酸化インジウム、酸
化アンチモン、酸化カドミウム、ＩＴＯ、ＩＺＯ、ＧＺ
Ｏなどが挙げられ、特にＩＴＯが好ましい。As the metal oxide, indium oxide, antimony oxide, cadmium oxide, ITO, IZO, GZ
Examples thereof include O, and ITO is particularly preferable.
【００３７】[0037]
【発明の実施の形態】以下図を参照として詳細に本発明
について説明する。DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in detail below with reference to the drawings.
【００３８】図１は、本発明の透明導電性フィルムの一
例を示す断面図である。高分子フィルム２の一方の面に
ハードコート層１を設け、他方の面にアンダーコート層
３を設け、その上に第一のＩＴＯ膜４を成膜し、さらに
その上に気相成膜する際の成膜条件を変えて第二のＩＴ
Ｏ膜５を成膜している。FIG. 1 is a sectional view showing an example of the transparent conductive film of the present invention. The hard coat layer 1 is provided on one surface of the polymer film 2, the undercoat layer 3 is provided on the other surface, a first ITO film 4 is formed thereon, and a vapor phase film is formed thereon. Second IT by changing film formation conditions
The O film 5 is formed.
【００３９】図２は、本発明の透明導電性フィルムを用
いたタッチパネルの一例を示す断面図である。下部電極
は、高分子フィルム２ｂの一方の面にアンダーコート層
３ｂを介して第一のＩＴＯ膜４ｂを積層し、他方の面に
接着剤層６によりガラス板またはプラスチック板の基板
７を貼り合わせて作製されている。上部電極のＩＴＯ膜
と、下部電極のＩＴＯ膜を対向させて、ドットスペーサ
ー８を介して貼り合わせてタッチパネルを形成してい
る。FIG. 2 is a sectional view showing an example of a touch panel using the transparent conductive film of the present invention. For the lower electrode, the first ITO film 4b is laminated on one surface of the polymer film 2b via the undercoat layer 3b, and the glass plate or plastic plate substrate 7 is attached to the other surface by the adhesive layer 6. It is made by. The ITO film of the upper electrode and the ITO film of the lower electrode are opposed to each other and are bonded together via the dot spacers 8 to form a touch panel.
【００４０】図３は、本発明の透明導電性フィルムを用
いたタッチパネルの別の一例を示す断面図である。下部
電極は、ガラス板の基板７に直接第一のＩＴＯ膜４ｄを
積層して作製され、上部電極のＩＴＯ膜と、下部電極の
ＩＴＯ膜を対向させて、ドットスペーサー８を介して貼
り合わせてタッチパネルを形成している。FIG. 3 is a sectional view showing another example of a touch panel using the transparent conductive film of the present invention. The lower electrode is produced by directly laminating the first ITO film 4d on the glass plate substrate 7, and the ITO film of the upper electrode and the ITO film of the lower electrode are made to face each other and bonded together via the dot spacer 8. It forms a touch panel.
【００４１】ＩＴＯ膜は、スパッタリング法で成膜する
ことが好ましい。スパッタリング法で酸化インジウム−
酸化スズ混合焼結セラミックをターゲット材料として用
い、第一のＩＴＯ膜と、第二のＩＴＯ膜とを製造する場
合、第二のＩＴＯ膜の成膜条件を第一のＩＴＯ膜の成膜
条件と異なるものとすることによって、第一のＩＴＯ膜
と第二のＩＴＯ膜の膜質を異なったものにすることがで
きる。The ITO film is preferably formed by a sputtering method. Indium oxide by sputtering method
When the first ITO film and the second ITO film are manufactured by using the tin oxide mixed sintered ceramic as the target material, the film forming condition of the second ITO film is set to the film forming condition of the first ITO film. By making them different, the film quality of the first ITO film and the second ITO film can be made different.
【００４２】例えば、スパッタリング時に酸素ガス流量
を大きくすることで、第二のＩＴＯ膜の酸素含有率を第
一のＩＴＯ膜より高くすることができる。また窒素ガス
流量を大きくすることで、第二のＩＴＯ膜の窒素含有率
を第一のＩＴＯ膜より高くすることができる。さらに
は、スパッタリング時の成膜圧力を大きくするか、ＤＣ
投入電力を大きくして成膜速度を大きくすることで、Ｉ
ＴＯ膜表面の凹凸粗さを大きくすることができ、第一の
ＩＴＯ膜と第二のＩＴＯ膜の間で結晶性、表面形態を変
えることができる。このように、第一のＩＴＯ膜と第二
のＩＴＯ膜を異質にすると、上部電極の表面の第二のＩ
ＴＯ膜と、下部電極の表面の第一のＩＴＯ膜の間で融着
が生じにくくなり、高分子フィルムからの透明導電膜の
剥離、脱落が防止できる。For example, the oxygen content of the second ITO film can be made higher than that of the first ITO film by increasing the flow rate of oxygen gas during sputtering. Also, by increasing the flow rate of nitrogen gas, the nitrogen content of the second ITO film can be made higher than that of the first ITO film. Furthermore, increase the deposition pressure during sputtering, or use DC
By increasing the input power to increase the film formation speed,
The roughness of the surface of the TO film can be increased, and the crystallinity and surface morphology can be changed between the first ITO film and the second ITO film. As described above, when the first ITO film and the second ITO film are made different from each other, the second I
Fusing is less likely to occur between the TO film and the first ITO film on the surface of the lower electrode, and peeling and falling of the transparent conductive film from the polymer film can be prevented.
【００４３】もちろん第一のＩＴＯ膜として、第二のＩ
ＴＯ膜と比較して酸素含有率が高いもの、窒素含有率が
高いもの、表面の凹凸粗さの大きいものを成膜してもよ
い。この場合も、第一のＩＴＯ膜と第二のＩＴＯ膜が異
質になり、上部電極と下部電極の間で融着が生じにくく
なるためである。Of course, as the first ITO film, the second I
A film having a higher oxygen content rate, a higher nitrogen content rate, or a larger surface roughness than the TO film may be formed. Also in this case, the first ITO film and the second ITO film are different from each other, and fusion between the upper electrode and the lower electrode is less likely to occur.
【００４４】ＩＴＯ膜は、その膜厚が薄すぎると充分な
導電性を得ることができず、過度に厚くても抵抗値が小
さくなり、タッチパネルを形成した際に良好な応答が得
られず、成膜コストが上昇する上に透明導電性フィルム
の厚さが大きくなって好ましくない。このため、第一の
ＩＴＯ膜と第二のＩＴＯ膜をあわせた膜厚は１から５０
０ｎｍ、特に５から１００ｎｍであることが好ましい。If the ITO film is too thin, sufficient conductivity cannot be obtained, and if it is too thick, the resistance value becomes small and a good response cannot be obtained when a touch panel is formed. This is not preferable because the film forming cost increases and the thickness of the transparent conductive film increases. Therefore, the total thickness of the first ITO film and the second ITO film is 1 to 50.
It is preferably 0 nm, particularly preferably 5 to 100 nm.
【００４５】下部電極のＩＴＯ膜は、上部電極の第一の
ＩＴＯ膜と同じ膜質のものであり、これにより上部電極
の第二のＩＴＯ膜と膜質を違うものとすることができ、
ＩＴＯ膜の融着を防止する。下部電極は、上部電極の第
一のＩＴＯ膜と同じ膜質のものを成膜してあればどのよ
うなものでも使用することができ、例えば、ガラス板に
直接上部電極の第一のＩＴＯ膜と同じ膜質の膜を成膜し
たものであってもよい。The ITO film of the lower electrode has the same film quality as the first ITO film of the upper electrode, which allows the film quality to be different from that of the second ITO film of the upper electrode.
Prevents fusion of ITO film. As the lower electrode, any film having the same film quality as that of the first ITO film of the upper electrode can be used, and for example, the first ITO film of the upper electrode can be directly formed on the glass plate. A film having the same film quality may be formed.
【００４６】本発明において、高分子フィルムとして、
ポリエステル、ポリエチレンテレフタレート（ＰＥ
Ｔ）、ポリブチレンテレフタレート、ポリメチルメタク
リレート（ＰＭＭＡ）、アクリル、ポリカーボネート
（ＰＣ）、ポリスチレン、トリアセテート（ＴＡＣ）、
ポリビニルアルコール、ポリ塩化ビニル、ポリ塩化ビニ
リデン、ポリエチレン、エチレン−酢酸ビニル共重合
体、ポリビニルブチラール、金属イオン架橋エチレン−
メタクリル酸共重合体、ポリウレタン、セロファンな
ど、好ましくはＰＥＴ、ＰＣ、ＰＭＭＡ、が挙げられる
が、コスト面からＰＥＴが最も好ましい。In the present invention, as the polymer film,
Polyester, polyethylene terephthalate (PE
T), polybutylene terephthalate, polymethyl methacrylate (PMMA), acrylic, polycarbonate (PC), polystyrene, triacetate (TAC),
Polyvinyl alcohol, polyvinyl chloride, polyvinylidene chloride, polyethylene, ethylene-vinyl acetate copolymer, polyvinyl butyral, metal ion cross-linked ethylene-
Methacrylic acid copolymer, polyurethane, cellophane and the like are preferable, and PET, PC and PMMA are preferable, but PET is most preferable from the viewpoint of cost.
【００４７】このような高分子フィルムの厚さは、タッ
チパネルの上部電極としての用途には、通常の場合１３
μｍ〜０．５ｍｍ程度とされる。この高分子フィルムの
厚さが１３μｍ未満では、上部電極としての充分な耐久
性を得ることができず、０．５ｍｍを超えると得られる
タッチパネルの厚肉化を招き、また上部電極としての柔
軟性も損なわれ、好ましくない。The thickness of such a polymer film is usually 13 when used as the upper electrode of a touch panel.
It is about μm to 0.5 mm. If the thickness of this polymer film is less than 13 μm, sufficient durability as an upper electrode cannot be obtained, and if it exceeds 0.5 mm, the resulting touch panel becomes thicker and the flexibility as an upper electrode is increased. Is also spoiled, which is not preferable.
【００４８】なお、高分子フィルムをタッチパネルの下
部電極として用いる場合、高分子フィルムの厚さは上記
範囲よりも厚く、０．５から２ｍｍ程度とすることもで
きるが、プラスチック板等の基板に貼り合わせることに
より、上部電極として用いる場合と同等の厚さを採用す
ることもできる。When the polymer film is used as the lower electrode of the touch panel, the thickness of the polymer film is thicker than the above range and may be about 0.5 to 2 mm. By combining them, it is possible to adopt the same thickness as that used for the upper electrode.
【００４９】本発明の透明導電性フィルムを上部電極と
して使用する場合、高分子フィルムのＩＴＯ膜を成膜す
る面とは反対側の面に、高分子フィルムをペンまたは指
の入力より保護するため、ハードコート層を形成しても
よい。このハードコート層としては、アクリル樹脂層、
エポキシ樹脂層、ウレタン樹脂層、シリコーン樹脂層等
が挙げられ、通常その厚さは１から５０μｍ程度であ
る。ハードコート層内にシリカ、アルミナのような高硬
度の微粉体を混ぜ合わせることもでき、またタッチパネ
ル電極の光学特性の向上を目的として、光散乱材料を練
りこんだアンチグレア加工等を施しても良い。When the transparent conductive film of the present invention is used as an upper electrode, the polymer film is protected on the surface of the polymer film opposite to the surface on which the ITO film is formed, from the input of a pen or a finger. Alternatively, a hard coat layer may be formed. As the hard coat layer, an acrylic resin layer,
Examples of the resin layer include an epoxy resin layer, a urethane resin layer, and a silicone resin layer, and the thickness thereof is usually about 1 to 50 μm. Fine particles of high hardness such as silica and alumina can be mixed in the hard coat layer, and for the purpose of improving the optical characteristics of the touch panel electrode, antiglare processing in which a light scattering material is kneaded may be applied. .
【００５０】さらにハードコート表面に反射防止膜を形
成することもできる。このハードコート表面に形成され
る反射防止膜としては、高屈折率透明膜と低屈折率透明
膜との積層膜が挙げられる。Further, an antireflection film can be formed on the hard coat surface. Examples of the antireflection film formed on the surface of the hard coat include a laminated film of a high refractive index transparent film and a low refractive index transparent film.
【００５１】ハードコート表面に形成された反射防止膜
の上に、さらに汚染防止膜を形成して、表面の耐汚染性
を向上させるようにしてもよい。この場合、汚染防止膜
としては、フッ素系樹脂薄膜、シリコン系樹脂薄膜など
よりなる膜厚１〜１０００ｎｍ程度の薄膜が好ましい。A stainproof film may be further formed on the antireflection film formed on the hard coat surface to improve the stain resistance of the surface. In this case, the contamination prevention film is preferably a thin film made of a fluorine resin thin film, a silicon resin thin film or the like and having a film thickness of about 1 to 1000 nm.
【００５２】また、ＩＴＯ膜は高分子フィルムに直接成
膜してもよいが、図１、２に示すように高分子フィルム
とＩＴＯ膜との間にアンダーコート層を介在させてもよ
く、このようなアンダーコート層を形成することにより
高分子フィルムに対する透明導電膜の密着性を高め、透
明導電膜の剥離を防止することができる。Although the ITO film may be directly formed on the polymer film, an undercoat layer may be interposed between the polymer film and the ITO film as shown in FIGS. By forming such an undercoat layer, the adhesion of the transparent conductive film to the polymer film can be enhanced and peeling of the transparent conductive film can be prevented.
【００５３】アンダーコート層の形成材料としては、例
えばアクリル系樹脂、ウレタン系樹脂、エポキシ系樹脂
などの樹脂層や、有機ケイ素化合物の加水分解物などが
挙げられる。Examples of materials for forming the undercoat layer include resin layers such as acrylic resins, urethane resins, and epoxy resins, and hydrolysates of organic silicon compounds.
【００５４】アンダーコート層の成膜は、所望の組成の
塗液を、例えばドクターナイフ、バーコーター、グラビ
アロールコーター、カーテンコーター、ナイフコーター
などにより、高分子フィルムにコーティングすることに
よりなされる。The undercoat layer is formed by coating the polymer film with a coating solution having a desired composition by using, for example, a doctor knife, a bar coater, a gravure roll coater, a curtain coater or a knife coater.
【００５５】高分子フィルムにアンダーコート層または
ＩＴＯ膜を成膜するのに先立ち、形成されるＩＴＯ膜の
接着強度を高めるために、高分子フィルムの表面に、常
法に従ってプラズマ処理、コロナ処理や溶剤洗浄などの
処理を施してもよい。Prior to forming the undercoat layer or the ITO film on the polymer film, in order to increase the adhesive strength of the formed ITO film, the surface of the polymer film is subjected to plasma treatment, corona treatment or You may perform processing, such as solvent washing.
【００５６】スペーサーの素材としては、例えば熱硬化
性樹脂、光硬化性樹脂が挙げられ、透明導電膜上に例え
ば印刷成形される。Examples of the material of the spacer include a thermosetting resin and a photocurable resin, which are print-molded on the transparent conductive film.
【００５７】高分子フィルムを基板に貼り合わせるため
の接着剤層は、エポキシ系、またはフェノール系、ウレ
タン系樹脂に硬化剤を配合したものあるいはアクリル
系、ゴム系、シリコン系接着剤等が挙げられ、通常その
厚さは５〜１００μｍ程度である。Examples of the adhesive layer for bonding the polymer film to the substrate include epoxy-based, phenol-based, urethane-based resin mixed with a curing agent, acrylic-based, rubber-based, or silicon-based adhesive. Usually, the thickness is about 5 to 100 μm.
【００５８】[0058]
【実施例】以下に実施例により本発明をさらに詳細に説
明するが、本発明はこれら実施例に限定されるものでは
ない。
実施例１〜４
基材として厚み１８８μｍのＰＥＴフィルムを用い、ま
ず片面に湿式塗工により厚み５μｍのハードコート層を
形成した。このフィルムを１００ｍｍ×１００ｍｍにカ
ットし、ハードコート層を施した面と反対の面を、減圧
下でプラズマ処理した。プラズマ処理の処理条件は、ア
ルゴンガス１００ｍｌ／ｍｉｎを流しながら真空度を１
３．３Ｐａにした後、高周波電源（１３．５６ＭＨｚ）
で１００Ｗ、１０分間である。The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples. Examples 1 to 4 A PET film having a thickness of 188 μm was used as a base material, and a hard coat layer having a thickness of 5 μm was first formed on one surface by wet coating. This film was cut into 100 mm × 100 mm, and the surface opposite to the surface coated with the hard coat layer was subjected to plasma treatment under reduced pressure. The plasma processing condition is that the vacuum degree is 1 while flowing 100 ml / min of argon gas.
After setting to 3.3 Pa, high frequency power supply (13.56 MHz)
100 W for 10 minutes.
【００５９】次に、マグネトロンスパッタリング装置
で、アルゴン流量５０ｍｌ／ｍｉｎ、酸素流量２ｍｌ／
ｍｉｎ、ターゲットとして酸化スズ１０質量％のＩＴＯ
ターゲットを用い、透明導電電極としてＩＴＯを２０ｎ
ｍの厚さにコーティングした。その上に上記と同様のマ
グネトロンスパッタ装置、ターゲット材料を用い、表１
に示す条件下で上記ＩＴＯ膜と異なる膜質のＩＴＯ薄膜
を積層することで透明導電性フィルムを作製した。Next, with a magnetron sputtering device, an argon flow rate of 50 ml / min and an oxygen flow rate of 2 ml / min.
min, ITO of tin oxide 10 mass% as a target
ITO is used as a transparent conductive electrode with a target of 20n
It was coated to a thickness of m. On top of that, the same magnetron sputtering device and target material as above were used.
A transparent conductive film was produced by laminating an ITO thin film having a film quality different from that of the above ITO film under the conditions shown in.
【００６０】下部電極は、以下のようにして形成した。The lower electrode was formed as follows.
【００６１】マグネトロンＤＣスパッタ装置のターゲッ
トとしてＩＴＯをセットし、真空チャンバーに１．１ｍ
ｍのソーダガラスをセットした。ターボ分子ポンプで５
×１０−４Ｐａまで排気した後、Ａｒガス１９６ｓｃｃ
ｍ、Ｏ２ガスを４ｓｃｃｍの流量で混合ガスとして導入
し、０．５Ｐａとなるように調整した。その後ＩＴＯタ
ーゲットに４ｋＷの電力を印加し、表面抵抗値が５００
Ω／ｓｑとなるようにＩＴＯ薄膜を成膜した。この基板
にドットスペーサーを印刷形成し、硬化させて下部電極
とした。ITO was set as a target of the magnetron DC sputtering device, and 1.1 m was placed in the vacuum chamber.
m soda glass was set. 5 with turbo molecular pump
After exhausting to 10-4 Pa, Ar gas 196 scc
m and O 2 gas were introduced as a mixed gas at a flow rate of 4 sccm and adjusted to be 0.5 Pa. Then, an electric power of 4 kW was applied to the ITO target, and the surface resistance value was 500.
An ITO thin film was formed so as to have Ω / sq. A dot spacer was printed on this substrate and cured to form a lower electrode.
【００６２】透明導電性フィルムを上部電極とし、上部
電極と下部電極を所定の形状にエッチングした。上部電
極と下部電極のそれぞれの端部には、Ａｇペーストによ
りリード配線を形成した。この上部電極、下部電極をそ
れぞれの透明導電膜が対向するように配置し、外周を接
着剤により固着してタッチパネルを形成した。接着剤の
厚みは６０μｍであった。Using the transparent conductive film as the upper electrode, the upper electrode and the lower electrode were etched into a predetermined shape. Lead wires were formed by Ag paste on the respective ends of the upper electrode and the lower electrode. The upper electrode and the lower electrode were arranged so that the respective transparent conductive films faced each other, and the outer periphery was fixed by an adhesive to form a touch panel. The thickness of the adhesive was 60 μm.
【００６３】次に得られたフィルムの摺動筆記による耐
久試験を行った。２５０ｇの荷重下の入力ペンで、タッ
チパネルの１０万回の摺動試験を行った後、フィルムの
電気特性を測定し耐久評価を行った。電気抵抗値が初期
に比べて変化率が５０％未満の場合をＯＫレベルとし、
５０％以上変化した場合をＮＧとした。結果を表１に示
す。Next, the obtained film was subjected to a durability test by sliding writing. After a sliding test of the touch panel was performed 100,000 times with an input pen under a load of 250 g, electrical characteristics of the film were measured and durability evaluation was performed. When the change rate of the electric resistance value is less than 50% compared to the initial value, it is regarded as an OK level,
The case where the change was 50% or more was NG. The results are shown in Table 1.
【００６４】比較例として透明導電膜が、ＩＴＯ膜が一
層のみの透明導電性フィルムを使用し、同様の耐久試験
を行った。As a comparative example, a transparent conductive film having a single ITO film was used as the comparative conductive film, and the same durability test was conducted.
【００６５】マグネトロンスパッタ装置での一層目のＩ
ＴＯの成膜条件は以下の通りである。
アルゴン流量：５０ｃｃ／ｍｉｎ、酸素ガス流量：３ｃ
ｃ／ｍｉｎ
真空度：０．５Ｐａ、ＤＣ投入電力２ｋＷ
成膜時間：６０秒（基材回転速度：１０ｒｐｍ）The first I in the magnetron sputtering apparatus
The TO film forming conditions are as follows. Argon flow rate: 50 cc / min, oxygen gas flow rate: 3 c
c / min Vacuum degree: 0.5 Pa, DC input power 2 kW Film formation time: 60 seconds (base material rotation speed: 10 rpm)
【００６６】[0066]
【表１】 [Table 1]
【００６７】[0067]
【発明の効果】以上述べた通り、本発明によれば、上部
電極の透明導電膜を成膜する際に、金属酸化物薄膜を設
けた後にこの薄膜とは異なる組成、形状の面をもつ金属
酸化物薄膜を形成することによって、電極からの透明導
電膜の剥離を防止し、下部電極との融着を防ぎ、耐摺動
性、耐久性に優れた透明導電性フィルムが提供される。As described above, according to the present invention, when the transparent conductive film for the upper electrode is formed, after the metal oxide thin film is provided, the metal having a surface different in composition and shape from the thin film is formed. By forming the oxide thin film, peeling of the transparent conductive film from the electrode is prevented, fusion with the lower electrode is prevented, and a transparent conductive film having excellent sliding resistance and durability is provided.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の透明導電性フィルムの一例を示す断面
図である。FIG. 1 is a cross-sectional view showing an example of a transparent conductive film of the present invention.
【図２】本発明のタッチパネルの一例を示す断面図であ
る。FIG. 2 is a cross-sectional view showing an example of the touch panel of the present invention.
【図３】本発明の透明導電性フィルムを用いたタッチパ
ネルの一例を示す断面図である。FIG. 3 is a cross-sectional view showing an example of a touch panel using the transparent conductive film of the present invention.
１、１ａ、１ｃ ハードコート層 ２、２ａ、２ｂ、２ｃ 高分子フィルム ３、３ａ、３ｂ アンダーコート層 ４、４ａ、４ｂ、４ｃ、４ｄ 第一のＩＴＯ膜 ５、５ａ、５ｃ 第二のＩＴＯ膜 ６ 接着剤層 ７ 基板 ８ ドットスペーサー 1, 1a, 1c Hard coat layer 2, 2a, 2b, 2c polymer film 3, 3a, 3b Undercoat layer 4, 4a, 4b, 4c, 4d First ITO film 5, 5a, 5c Second ITO film 6 Adhesive layer 7 substrate 8 dot spacer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｃ２３Ｃ 14/34 Ｃ２３Ｃ 14/34 Ｎ Ｈ０１Ｂ 13/00 ５０３ Ｈ０１Ｂ 13/00 ５０３Ｂ (72)発明者 岩淵 芳典 東京都小平市小川東町３−１−１ (72)発明者 草野 行弘 東京都小平市小川東町３−１−１ Ｆターム(参考） 4F100 AA17B AA17C AA28B AA28C AK01A AK42 BA03 BA07 BA10A BA10C BA27 EH66B GB41 JG01B JG01C JL01 JN01B JN01C 4K029 AA11 AA25 BA50 BB02 BC03 CA06 DC05 5G307 FA02 FB01 FB04 FC01 FC02 5G323 BA02 BB03 BB05 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) C23C 14/34 C23C 14/34 N H01B 13/00 503 H01B 13/00 503B (72) Inventor Yoshinori Iwabuchi Tokyo 3-1-1 Ogawahigashicho, Kodaira-shi, Tokyo (72) Inventor Yukihiro Kusano 3-1-1 Ogawahigashicho, Kodaira-shi, Tokyo F-reference (reference) 4F100 AA17B AA17C AA28B AA28C AK01A AK42 BA03 BA07 BA10A BA10C BA27 EH66B GB41 JG01B JG01C JL01 JN01B JN01C 4K029 AA11 AA25 BA50 BB02 BC03 CA06 DC05 5G307 FA02 FB01 FB04 FC01 FC02 5G323 BA02 BB03 BB05
Claims (26)
により設けられた金属酸化物からなる透明導電膜を含む
透明導電性フィルムであって、金属酸化物からなる透明
導電膜が、第一の金属酸化物からなる透明導電膜および
その上に設けられた第二の金属酸化物からなる透明導電
膜からなり、かつ第二の金属酸化物からなる透明導電膜
が第一の金属酸化物からなる透明導電膜の成膜条件と異
なる条件で形成されていることを特徴とする透明導電性
フィルム。1. A transparent conductive film comprising a polymer film and a transparent conductive film made of a metal oxide formed thereon by a vapor deposition method, wherein the transparent conductive film made of a metal oxide comprises: A transparent conductive film made of a transparent conductive film made of a first metal oxide and a second conductive film made of a second metal oxide provided on the transparent conductive film made of a second metal oxide is a first metal oxide. A transparent conductive film formed under the conditions different from the film forming conditions of the transparent conductive film made of.
ジウム−酸化スズ（ＩＴＯ）膜である、請求項１に記載
のフィルム。2. The film according to claim 1, wherein the transparent conductive film made of a metal oxide is an indium oxide-tin oxide (ITO) film.
項１または２に記載のフィルム。3. The film according to claim 1, wherein the vapor phase film forming method is a sputtering method.
る請求項１から３のいずれかに記載のフィルム。4. The film according to claim 1, wherein the vapor phase film forming method is a reactive sputtering method.
して酸化インジウム−酸化スズ混合焼結セラミックター
ゲットが使用されていることを特徴とする請求項１から
４のいずれかに記載のフィルム。5. The film according to claim 1, wherein an indium oxide-tin oxide mixed sintered ceramic target is used as a target material used in the vapor deposition method.
してインジウム−スズ合金金属ターゲットが使用されて
いることを特徴とする請求項４に記載のフィルム。6. The film according to claim 4, wherein an indium-tin alloy metal target is used as a target material used in the vapor deposition method.
第一の金属酸化物からなる透明導電膜と酸素含有率が異
なることを特徴とする請求項１から６のいずれかに記載
のフィルム。7. A transparent conductive film made of a second metal oxide,
7. The film according to claim 1, wherein the transparent conductive film made of the first metal oxide has a different oxygen content.
第一の金属酸化物からなる透明導電膜と窒素含有率が異
なることを特徴とする請求項１から６のいずれかに記載
のフィルム。8. A transparent conductive film comprising a second metal oxide,
The film according to any one of claims 1 to 6, which has a nitrogen content different from that of the transparent conductive film made of the first metal oxide.
第一の金属酸化物からなる透明導電膜と結晶状態および
／または表面形状が異なることを特徴とする請求項１か
ら８のいずれかに記載のフィルム。9. A transparent conductive film comprising a second metal oxide,
The film according to any one of claims 1 to 8, which has a crystalline state and / or a surface shape different from that of the transparent conductive film made of the first metal oxide.
成膜に際して、スパッタリング時の圧力が、第一の金属
酸化物からなる透明導電膜の成膜の際の圧力と異なるこ
とを特徴とする請求項９に記載のフィルム。10. The pressure during sputtering when forming a transparent conductive film made of a second metal oxide is different from the pressure at the time of forming a transparent conductive film made of a first metal oxide. The film according to claim 9.
成膜に際して、スパッタリング時の成膜速度が、第一の
金属酸化物からなる透明導電膜の成膜の際の成膜速度と
異なることを特徴とする請求項９に記載のフィルム。11. When forming a transparent conductive film made of a second metal oxide, the film forming speed during sputtering is the same as the film forming speed when forming a transparent conductive film made of the first metal oxide. The film according to claim 9, which is different.
フィルム上に形成された透明導電性フィルムであって、
金属酸化物からなる透明導電膜が、第一の金属酸化物か
らなる透明導電膜およびその上に設けられた第二の金属
酸化物からなる透明導電膜からなり、かつ第二の金属酸
化物からなる透明導電膜が、第一の金属酸化物からなる
透明導電膜と酸素含有率が異なることを特徴とする透明
導電性フィルム。12. A transparent conductive film formed of a metal oxide on a polymer film, the transparent conductive film comprising:
A transparent conductive film made of a metal oxide, a transparent conductive film made of a first metal oxide and a transparent conductive film made of a second metal oxide provided thereon, and from a second metal oxide The transparent conductive film having a different oxygen content from the transparent conductive film made of the first metal oxide.
フィルム上に形成された透明導電性フィルムであって、
金属酸化物からなる透明導電膜が、第一の金属酸化物か
らなる透明導電膜およびその上に設けられた第二の金属
酸化物からなる透明導電膜からなり、かつ第二の金属酸
化物からなる透明導電膜が、第一の金属酸化物からなる
透明導電膜と窒素含有率が異なることを特徴とする透明
導電性フィルム。13. A transparent conductive film formed of a metal oxide on a polymer film, the transparent conductive film comprising:
A transparent conductive film made of a metal oxide, a transparent conductive film made of a first metal oxide and a transparent conductive film made of a second metal oxide provided thereon, and from a second metal oxide The transparent conductive film having a nitrogen content different from that of the transparent conductive film made of the first metal oxide.
Ｏ膜である請求項１２または１３に記載のフィルム。14. A transparent conductive film made of a metal oxide is IT
The film according to claim 12, which is an O film.
形成した高分子フィルムを透明基板に貼り合わせてなる
下部電極と、請求項１から１４のいずれかに記載の透明
導電性フィルムを、透明導電膜同士を対面させるように
スペーサーを介して貼り合わせてなるタッチパネル。15. A lower electrode comprising a transparent substrate and a polymer film having a transparent conductive film made of a first metal oxide formed thereon, and the transparent conductive film according to claim 1. , A touch panel formed by bonding transparent conductive films to each other via a spacer.
一の金属酸化物からなる透明導電膜を形成し、当該第一
の金属酸化物からなる透明導電膜の上に成膜条件を変化
させた第二の金属酸化物からなる透明導電膜を形成する
ことを特徴とする透明導電性フィルムの製造方法。16. A transparent conductive film made of a first metal oxide is formed on a polymer film by a vapor phase film forming method, and film forming conditions are set on the transparent conductive film made of the first metal oxide. A method for producing a transparent conductive film, which comprises forming a transparent conductive film made of a changed second metal oxide.
膜である請求項１６に記載の製造方法。17. A transparent conductive film made of a metal oxide is ITO.
The method according to claim 16, which is a film.
とを特徴とする請求項１６または１７に記載の製造方
法。18. The method according to claim 16, wherein the vapor phase film forming method is a sputtering method.
あることを特徴とする請求項１６から１８のいずれかに
記載の製造方法。19. The manufacturing method according to claim 16, wherein the vapor phase film forming method is a reactive sputtering method.
として、酸化インジウム−酸化スズ混合焼結セラミック
ターゲットを使用することを特徴とする請求項１６から
１９のいずれかに記載の製造方法。20. The method according to claim 16, wherein an indium oxide-tin oxide mixed sintered ceramic target is used as a target material used in the vapor phase film forming method.
としてインジウム−スズ合金金属ターゲットを使用する
ことを特徴とする請求項１９に記載の製造方法。21. The manufacturing method according to claim 19, wherein an indium-tin alloy metal target is used as a target material used in the vapor phase film forming method.
形成した後に、酸素含有率が異なる第二の金属酸化物か
らなる透明導電膜を形成することを特徴とする請求項１
６から２１のいずれかに記載の製造方法。22. A transparent conductive film made of a second metal oxide having a different oxygen content is formed after forming a transparent conductive film made of a first metal oxide.
22. The manufacturing method according to any one of 6 to 21.
形成した後に、窒素含有率が異なる第二の金属酸化物か
らなる透明導電膜を形成することを特徴とする請求項１
６から２１のいずれかに記載の製造方法。23. A transparent conductive film made of a second metal oxide having a different nitrogen content is formed after the transparent conductive film made of the first metal oxide is formed.
22. The manufacturing method according to any one of 6 to 21.
形成した後に、結晶状態および／または表面形状の異な
る第二の金属酸化物からなる透明導電膜を形成すること
を特徴とする請求項１６から２３のいずれかに記載の製
造方法。24. A transparent conductive film made of a second metal oxide having a crystalline state and / or a surface shape different from that of the transparent conductive film made of a first metal oxide is formed. Item 24. The production method according to any one of Items 16 to 23.
成膜に際して、スパッタリング時の圧力を第一の金属酸
化物からなる透明導電膜の成膜の際の圧力と異なる値と
することを特徴とする請求項２４に記載の製造方法。25. When forming a transparent conductive film made of a second metal oxide, the pressure during sputtering is set to a value different from the pressure when forming a transparent conductive film made of the first metal oxide. The manufacturing method according to claim 24, wherein:
成膜に際して、スパッタ時の成膜速度を第一の金属酸化
物からなる透明導電膜の成膜の際の成膜速度と異なる値
とすることを特徴とする請求項２４に記載の製造方法。26. When forming a transparent conductive film made of a second metal oxide, the film forming speed at the time of sputtering is different from the film forming speed at the time of forming a transparent conductive film made of the first metal oxide. 25. The manufacturing method according to claim 24, wherein the value is a value.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001351800A JP4086132B2 (en) | 2001-11-16 | 2001-11-16 | Transparent conductive film and touch panel |
| US10/491,568 US7534500B2 (en) | 2001-10-05 | 2002-10-07 | Transparent electroconductive film, method for manufacture thereof, and touch panel |
| PCT/JP2002/010408 WO2003032332A1 (en) | 2001-10-05 | 2002-10-07 | Transparent electroconductive film, method for manufacture thereof, and touch panel |
| KR1020047004879A KR100905478B1 (en) | 2001-10-05 | 2002-10-07 | Transparent conductive Film and Touch panel |
| CNB028197739A CN1301510C (en) | 2001-10-05 | 2002-10-07 | Transparent electroconductive film, method for manufacture thereof, and touch panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001351800A JP4086132B2 (en) | 2001-11-16 | 2001-11-16 | Transparent conductive film and touch panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003151358A true JP2003151358A (en) | 2003-05-23 |
| JP4086132B2 JP4086132B2 (en) | 2008-05-14 |
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ID=19164062
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001351800A Expired - Fee Related JP4086132B2 (en) | 2001-10-05 | 2001-11-16 | Transparent conductive film and touch panel |
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| Country | Link |
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| JP (1) | JP4086132B2 (en) |
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