KR20180088111A - Semiconductor device and light emitting device package having thereof - Google Patents

Abstract

An embodiment relates to a semiconductor device and a semiconductor device package having the same. The semiconductor device according to an embodiment includes a first conductive semiconductor layer, a plurality of well layers on the first conductive semiconductor layer, an active layer including a plurality of barrier layers, and a second conductive semiconductor layer disposed on the active layer, wherein each of the well layers includes a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, and a fourth semiconductor layer disposed between the second and third semiconductor layers. The second semiconductor layer includes an aluminum composition and has a bandgap higher than those of the first and third semiconductor layers. The fourth semiconductor layer includes an indium composition and has a band gap between the second and third semiconductor layers. A thickness of the first semiconductor layer is equal to or greater than the total thickness of the third and fourth semiconductor layers. Therefore, the semiconductor device according to an embodiment may improve the brightness while maintaining the operating voltage.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor device,

Embodiments relate to semiconductor devices.

An embodiment relates to a semiconductor device package.

An embodiment relates to a lighting device.

Semiconductor devices including compounds such as GaN and AlGaN have many merits such as having a wide and easily adjustable bandgap energy, and can be used variously as semiconductor devices, light receiving devices and various diodes.

Particularly, semiconductor devices such as light emitting diodes and laser diodes using semiconductor materials of Group 3-5 or 2-6 group semiconductors have been developed by thin film growth techniques and device materials, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, , Safety, and environmental friendliness.

In addition, when a light-receiving element such as a photodetector or a solar cell is manufactured using a semiconductor material of Group 3-5 or Group 2-6 compound semiconductor, development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. It also has advantages of fast response speed, safety, environmental friendliness and easy control of device materials, so it can be easily used for power control or microwave circuit or communication module.

Accordingly, the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diodes (LEDs), automotive headlights, traffic lights, and gas and fire sensors. In addition, semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.

For example, in general semiconductor devices, the holes provided from the p-type semiconductor layer and the electrons provided from the n-type semiconductor layer in the active layer recombine to generate a specific wavelength. It is important to improve the light efficiency to improve the probability of recombination of holes and electrons in the active layer .

One of the problems of the embodiment is to provide a semiconductor device and a semiconductor device package having the same capable of improving brightness while maintaining an operating voltage.

One of the solutions to the problems of the embodiment is to provide a semiconductor element capable of improving the luminous efficiency, a semiconductor element having the semiconductor element, and a semiconductor element package having the semiconductor element.

One of the problems of the embodiment is to provide a semiconductor device capable of improving external quantum efficiency (EQE) and a semiconductor device package having the same.

One of the problems of the embodiment is to provide a semiconductor device capable of improving light intensity and improving the movement of holes and a semiconductor device package having the semiconductor device.

One of the problems of the embodiment is to provide a semiconductor device capable of improving the internal quantum efficiency (IQE) by improving the resistance between the well layer and the barrier layer of the active layer, improving the droop and improving the light intensity, A semiconductor device package can be provided.

The semiconductor device of the embodiment includes a first conductivity type semiconductor layer; An active layer including a plurality of well layers and a plurality of barrier layers on the first conductivity type semiconductor layer; And a second conductive semiconductor layer disposed on the active layer, wherein each of the plurality of barrier layers includes a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the second semiconductor layer And a fourth semiconductor layer disposed between the second and third semiconductor layers, wherein the second semiconductor layer includes an aluminum composition and has a bandgap higher than that of the first and third semiconductor layers, Wherein the fourth semiconductor layer comprises an indium composition and includes a bandgap between the second semiconductor layer and the third semiconductor layer, the thickness of the first semiconductor layer being greater than the thickness of the third and fourth semiconductor layers Lt; / RTI > Therefore, the semiconductor device of the embodiment not only improves the brightness while maintaining the operating voltage, but also improves the droplet by improving the hole injection efficiency.

A semiconductor device package of an embodiment includes: a body having a cavity; And first and second lead frames disposed in the body, wherein the semiconductor device includes the semiconductor element to improve the luminous intensity while maintaining the operating voltage, and to improve the hole injection efficiency.

It can be seen that the external quantum efficiency (EQE) is improved as compared with the comparative example as the current density increases.

In addition, in the embodiment, the second semiconductor layer having a larger bandgap than the first and third semiconductor layers includes a barrier layer disposed between the first and third semiconductor layers to improve the electron overflow and maintain the operating voltage The light intensity can be improved by 1% or more.

The embodiment also includes a fourth semiconductor layer comprising InGaN including a barrier layer disposed between the second and third semiconductor layers to improve the resistance between the well layer and the barrier layer to improve the internal quantum efficiency (IQE) have.

In addition, the embodiment may include a barrier layer including InGaN to improve the droplet and improve the brightness.

In addition, it can be seen that the embodiment improves the internal quantum efficiency (IQE) by improving the hole injection efficiency to improve the droplet.

1 is a cross-sectional view showing a semiconductor device according to an embodiment.
2 is a cross-sectional view illustrating the light emitting structure of FIG.
3 is a diagram showing an energy band diagram of a semiconductor device according to an embodiment.
4 is a diagram showing an energy band diagram of an active layer bent by an electric field.
5 is a graph showing the internal quantum efficiency of the comparative example and the embodiment.
6 is a cross-sectional view showing a semiconductor device according to another embodiment.
7 is a cross-sectional view showing a semiconductor device according to still another embodiment.
8 is a view showing a vertical type semiconductor device.
9 is a view showing a light emitting device package having the semiconductor elements of Figs. 1 to 8. Fig.

The embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below.

Although not described in the context of another embodiment, unless otherwise described or contradicted by the description in another embodiment, the description in relation to another embodiment may be understood.

For example, if the features of configuration A are described in a particular embodiment, and the features of configuration B are described in another embodiment, even if the embodiment in which configuration A and configuration B are combined is not explicitly described, It is to be understood that they fall within the scope of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The electric device may include various electronic devices such as a semiconductor device, a light receiving device, an optical modulator, and a gas sensor. Although the embodiment has been described by way of example of a gas sensor, the present invention is not limited thereto and can be applied to various fields of electric devices.

FIG. 1 is a cross-sectional view illustrating a semiconductor device according to an embodiment, FIG. 2 is a cross-sectional view illustrating a light emitting structure of FIG. 1, FIG. 3 is a diagram illustrating an energy band diagram of a semiconductor device according to an embodiment, Fig. 5 is a diagram showing an energy band diagram of an active layer bent by an electric field.

As shown in FIGS. 1 to 4, the semiconductor device 101 according to the first embodiment is described as an example of a light emitting device that emits light having a predetermined wavelength, but the present invention is not limited thereto.

One of the problems of the embodiment is to improve the overflow of the carrier to improve the brightness while maintaining the operating voltage. That is, one of the problems of the embodiment can improve the external quantum efficiency (EQE). To this end, the semiconductor device of the embodiment may include an active layer 50 having a barrier layer including an aluminum composition. One of the problems of the embodiment is to improve the hole transport and reduce the resistance between the well layer and the barrier layer to improve the internal quantum efficiency (IQE). To this end, the semiconductor device of the embodiment may include an active layer 50 having a barrier layer containing an indium composition.

The semiconductor device of the embodiment may include the light emitting structure 10, the conductive layer 80, the fifth semiconductor layer 70, the first electrode 191, and the second electrode 195.

The semiconductor device may include a substrate 20 under the first conductive semiconductor layer 40 or may include the substrate 20 and the buffer layer 30.

The substrate 20 may be, for example, a translucent, conductive substrate or an insulating substrate. For example, the substrate 20 is a sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ Or the like. A plurality of protrusions (not shown) may be formed on the top surface and / or bottom surface of the substrate 20, and each of the plurality of protrusions may include at least one of a hemispherical shape, a polygonal shape, and an elliptical shape, Or in the form of a matrix. The protrusions can improve the light extraction efficiency.

The buffer layer 30 may be disposed between the substrate 20 and the first semiconductor layer 40. The buffer layer 30 may be formed of at least one layer using Group III-V or Group V-VI compound semiconductors. The buffer layer 30 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . The buffer layer 30 may include at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and ZnO.

The buffer layer 30 may be formed in a super lattice structure by alternately arranging different semiconductor layers. The buffer layer 30 may be disposed to mitigate the difference in lattice constant between the substrate 20 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The lattice constant of the buffer layer 30 may have a value between lattice constants between the substrate 20 and the nitride-based semiconductor layer. The buffer layer 30 may not be formed, but the present invention is not limited thereto.

The light emitting structure 10 may include a first conductive semiconductor layer 40, an active layer 50, and a second conductive semiconductor layer 60.

≪ First conductive type semiconductor layer >

The first conductive semiconductor layer 40 may be disposed between the substrate 20 and the active layer 50. The first conductive semiconductor layer 40 may be formed of at least one of Group III-V or Group V-VI compound semiconductors. The first conductive semiconductor layer 40 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + As shown in FIG. The first conductive semiconductor layer 40 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The first conductive semiconductor layer 40 may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te.

The first conductive semiconductor layer 40 may be a single layer or a multilayer. For example, when the first conductive semiconductor layer 40 is a multi-layered structure, two different layers or three layers may be alternately repeatedly stacked. For example, InGaN / GaN, AlGaN / GaN, AlInN / GaN, AlInGaN / InGaN / GaN, and may include a superlattice structure having a plurality of periods.

≪ Active layer &

The active layer 50 may be disposed on the first conductive semiconductor layer 40. The active layer 50 may be formed of at least one of a single well, a single quantum well, a multi-well, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure .

Electrons (or holes) injected through the first conductive type semiconductor layer 40 and holes (or electrons) injected through the second conductive type semiconductor layer 60 meet with each other in the active layer 50, And is a layer which emits light due to a band gap difference of an energy band according to a material of the active layer 50. [ The active layer 50 may be formed of a compound semiconductor. The active layer 50 may be formed of at least one of Group 3-Group-5 or Group-6-Group compound semiconductors. When the active layer 50 is implemented as a multi-well structure, the active layer 50 may include a plurality of alternately arranged well layers 51 and a plurality of barrier layers 53.

The plurality of well layers 51 and the plurality of barrier layers 53 may be formed of a material such as InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / InGaN, InGaN / InGaN, InGaAs / / GaP, AlInGaP / InGaP, and InP / GaAs.

The plurality of well layers 51 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + .

The plurality of barrier layers 53 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + .

The plurality of barrier layers 53 of the embodiment may include first to fourth semiconductor layers 54, 55, 56, and 57.

The first semiconductor layer 54 may be disposed on the well layer 51 and may be in direct contact with the well layer 51. The first semiconductor layer 54 of the embodiment may be any one of GaN, InGaN, GaAs, InGaAs, GaP, and InP, but is not limited thereto. For example, the first semiconductor layer 54 of the embodiment may be GaN. When the thickness of the first semiconductor layer 54 is T1 and the total thickness of one barrier layer 53 is T0, the T1: T0 ratio may be 0.01: 1.0 to 0.1: 1.0.

The third semiconductor layer 56 is disposed on the fourth semiconductor layer 57 and may be in direct contact with the next well layer 51. The third semiconductor layer 56 of the embodiment may be any one of GaN, InGaN, GaAs, InGaAs, GaP, and InP, but is not limited thereto. For example, the first semiconductor layer 54 of the embodiment may be GaN. The fourth semiconductor layer 57 may include an indium composition. For example, the fourth semiconductor layer 57 may be InGaN. When the thickness of the third and fourth semiconductor layers 56 and 57 is T3 and the total thickness of one barrier layer 53 is T0, the ratio of T3: T0 may be 0.1: 1.0 to 0.3: 1.0. The total thickness of the third and fourth semiconductor layers 55 and 57 may be equal to or greater than the thickness of the first semiconductor layer 55. The thickness of the first and third semiconductor layers 54, 56, and 57 may determine the position of the second semiconductor layer 55 within the barrier layer 53. For example, when the entirety of the third and fourth semiconductor layers 56 and 57 is greater than the thickness of the first semiconductor layer 54, May be disposed closer to the second region 54S of the first semiconductor layer 54 than the second region 56E. The first and second regions 56E and 54S may be defined as the upper and lower regions of the barrier layer 53 located farthest from the center region of the barrier layer 53. [ The second semiconductor layer 55 having a larger bandgap than the first, third and fourth semiconductor layers 54, 56 and 57 has a thickness of the first, third and fourth semiconductor layers 54, 56 and 57 In the barrier layer 53 in the direction of the first conductivity type semiconductor layer 40, thereby improving the electron overflow.

One of the problems of the embodiment is to improve the carrier overflow and improve the brightness while maintaining the operating voltage. To this end, the semiconductor device of the embodiment may comprise a plurality of barrier layers 53 comprising a second semiconductor layer 55 comprising an aluminum composition.

The second semiconductor layer 55 may be disposed between the first and fourth semiconductor layers 54 and 57 and directly contact the first and fourth semiconductor layers 54 and 57. The second semiconductor layer 55 may include at least one of AlGaN, AlGaAs, and AlInGaP. For example, the second semiconductor layer 55 may include a semiconductor material having a composition formula of Al _z Ga _{1 - z} N (0 <z <1).

The second semiconductor layer 55 may include a second bad gap G2 that is larger than the first band gap G1 of the first semiconductor layer 54. [ The second band gap G2 may be greater than the third band gap G3 of the third semiconductor layer 56 and the first and third band gaps G1 and G3 may be equal to each other, It is not. The energy band of the active layer 50 of the nitride-based semiconductor is bent by the electric field, and the carrier overflow can be intensified by the bending energy band. Embodiments include a second semiconductor layer 55 that includes a second band gap G2 that is higher than the first and third semiconductor layers 54 and 56 to improve carrier overflow by bending energy bends .

The aluminum composition (z) of the second semiconductor layer 55 may be 1% to 15%, and specifically 1% to 8%. If the aluminum composition (z) is less than 1%, it is difficult to improve the carrier overflow by tunneling. If the aluminum composition (z) exceeds 15%, the crystal quality may deteriorate depending on aluminum.

When the thickness of the second semiconductor layer 55 is T2 and the total thickness of one barrier layer 53 is T0, the ratio of T2: T0 may be 0.6: 1.0 to 0.8: 1.0. Specifically, the thickness of the second semiconductor layer 55 may be 80% or less of the total thickness of one barrier layer 53. For example, when the total thickness of the barrier layer 53 is 5 nm, the thickness of the second semiconductor layer 55 may be 4 nm or less.

If the thickness of the second semiconductor layer 55 exceeds 80% of the total thickness of one barrier layer 53, the second semiconductor layer 55 containing the aluminum composition z affecting the crystal quality The thickness may become thick and the crystal quality may be deteriorated. As a result, the operating voltage may increase due to a decrease in carrier injection efficiency and the like.

One of the problems of the embodiment is to improve the hole transport and reduce the resistance between the well layer and the barrier layer to improve the internal quantum efficiency (IQE). To this end, the semiconductor device of the embodiment may comprise a barrier layer 53 having a fourth semiconductor layer 57 comprising an indium composition.

The fourth semiconductor layer 57 may be disposed between the second and third semiconductor layers 55 and 56 and directly contact the second and third semiconductor layers 55 and 56. The fourth semiconductor layer 57 may include an indium composition. For example, the fourth semiconductor layer 57 is In _q Ga _{1 -} may include a semiconductor material having a compositional formula of _{q N (0 <q <1} ). The fourth semiconductor layer 57 may include a function of improving the band gap difference between the second semiconductor layer 55 and the third semiconductor layer 56 and improving the droplet by improving the hole injection efficiency .

The fourth semiconductor layer 57 may include a sixth bad gap G6 that is larger than the first band gap G1 of the first semiconductor layer 54. [ The sixth band gap G6 may be larger than the third band gap G3 of the third semiconductor layer 56 and may be smaller than the second bend gap G2 of the second semiconductor layer 55. [ Here, the first and third band gaps G1 and G3 may be equal to each other, but are not limited thereto.

The second semiconductor layer 55 is formed between the second semiconductor layer 55 and the third semiconductor layer 56 in order to improve the droop phenomenon due to the band gap that is raised according to the second semiconductor layer 55. [ And the fourth semiconductor layer 57 having a bandgap between the third semiconductor layer 56 and the third semiconductor layer 56, thereby improving the droplet.

The indium composition q of the fourth semiconductor layer 57 may be 1% to 6%, and may be 1% to 4%. If the indium composition (q) is less than 1%, it may be difficult to improve the droplet. If the indium composition (q) is more than 5%, the crystal quality may deteriorate and the improvement of the droplet may be difficult.

The thickness of the fourth semiconductor layer 57 may be 0.1 nm to 1 nm. If the thickness of the fourth semiconductor layer 57 is less than 0.1 nm, the hole injection efficiency may be lowered and it may be difficult to improve the droop. When the thickness of the fourth semiconductor layer 57 is more than 1 nm, the crystal quality may be deteriorated and the droop improvement may be difficult.

The embodiment can improve the operating voltage by improving the carrier overflow by the second semiconductor layer 55 having a band gap larger than that of the first and third semiconductor layers 54 and 56 and the second semiconductor layer 55 The band gap difference between the second semiconductor layer 55 and the third semiconductor layer 56 is improved by the fourth semiconductor layer 57 having the band gap between the second semiconductor layer 55 and the third semiconductor layer 56, The droplet can be improved by improving the injection efficiency.

Although not shown in the figure, a superlattice structure semiconductor layer is further included between the active layer 50 and the first conductivity type semiconductor layer 40 and between the active layer 50 and the second conductivity type semiconductor layer 60 can do. The semiconductor layer of the superlattice structure may include a plurality of pairs, for example. The semiconductor layer of the superlattice structure may include a current spreading function and a stress relaxation function.

<Fifth Semiconductor Layer>

The fifth semiconductor layer 70 may be disposed on the active layer 50. The fifth semiconductor layer 70 may be disposed between the active layer 50 and the third semiconductor layer 60. The fifth semiconductor layer 70 may include an electron blocking function. The fifth semiconductor layer 70 includes a fourth band gap G4 higher than the active layer 50 to block electrons from the active layer 50 and to prevent electrons from the second conductivity type semiconductor layer 60 Holes can be confined in the active layer 50 to increase the carrier injection efficiency in the active layer 50. [

The fifth semiconductor layer 70 may be formed of at least one of Group III-V-VI or Group V-VI compound semiconductors. The fifth semiconductor layer 70 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The fifth semiconductor layer 70 may be a p-type semiconductor layer having a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The fifth semiconductor layer 70 of the embodiment may include a fourth band gap G4 that is larger than the second band gap G2 of the second semiconductor layer 54 of the active layer 50. [ For this, the fifth semiconductor layer 70 may include an aluminum composition. The fifth semiconductor layer 70 may be formed of a semiconductor material having a composition formula of Al _p Ga _{1 -p} N (0 <p <1), for example. The aluminum composition (p) of the fifth semiconductor layer 70 may be 0.05 to 0.2. When the aluminum composition (p) of the fifth semiconductor layer 70 is less than 0.05, the electron blocking function may be deteriorated. When the aluminum composition (p) of the fifth semiconductor layer 70 is more than 0.2, crystallinity may be deteriorated.

Here, the aluminum composition p and the thickness of the fifth semiconductor layer 70 may be in inverse proportion. The thickness of the fifth semiconductor layer 70 may be 100 nm or less. When the thickness of the fifth semiconductor layer 70 is more than 100 nm, crystal quality may decrease as the aluminum composition p, which affects crystal quality, is thicker.

<Third semiconductor layer>

The second conductive semiconductor layer 60 may be disposed on the fifth semiconductor layer 70. The second conductive semiconductor layer 60 may be a single layer or a multilayer.

The second conductive semiconductor layer 60 may be formed of at least one of Group III-V-VI or Group-VI-VI compound semiconductors. The second conductivity type semiconductor layer 60 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + As shown in FIG. The second conductive semiconductor layer 60 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The second conductive semiconductor layer 60 may be a p-type semiconductor layer having a p-type dopant such as Mg, Zn, Ca, Sr, and Ba.

The second conductivity type semiconductor layer 60 of the embodiment may be a single layer or a multilayer. For example, when the second conductive semiconductor layer 60 is a multi-layered structure, two different layers or three layers may be alternately repeatedly stacked. For example, AlGaN / GaN, AlInN / GaN, InGaN / GaN, AlInGaN / InGaN / GaN, and may include a superlattice structure having a plurality of periods.

The first conductive semiconductor layer 40 may be an n-type semiconductor layer and the second conductive semiconductor layer 60 may be a p-type semiconductor layer. However, the first conductive semiconductor layer 40 40 may be a p-type semiconductor layer, and the second conductivity type semiconductor layer 60 may be an n-type semiconductor layer. Also, on the second conductive semiconductor layer 60, a semiconductor (e.g., an n-type semiconductor layer) (not shown) having a polarity opposite to that of the second conductive type may be formed. Accordingly, the semiconductor device 101 of the embodiment can be implemented by any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

<Conductive layer>

Here, a conductive layer 80 having an ohmic contact function may be disposed between the second electrode 195 and the second conductive semiconductor layer 60.

The conductive layer 80 may include at least one conductive material. The conductive layer 80 may be a single layer or a multilayer. The conductive layer 80 may include at least one of a metal, a metal oxide, and a metal nitride material. The conductive layer 80 may include a light-transmitting material. For example, the conductive layer 80 may be formed of one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO ITO, Ni / IrOx / Au, Ni / IrOx / ITO, IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / Au / ITO, Pt, Ni, Au, Rh, or Pd.

Although the embodiment defines the semiconductor element including the conductive layer 80, the conductive layer 80 is not limited to this, and the conductive layer 80 may be omitted.

<First and Second Electrodes>

The first electrode 191 may be electrically connected to the first conductive semiconductor layer 40. The second electrode 195 may be electrically connected to the second conductive semiconductor layer 60. The first electrode 191 may be disposed on the first conductive semiconductor layer 40 and the second electrode 195 may be disposed on the second conductive semiconductor layer 60, 0.0 &gt; 80 &lt; / RTI &gt;

The first and second electrodes 191 and 195 may include an arm structure or a finger structure. The arm structure or finger structure may include the semiconductor device 101 current spreading function. The first and second electrodes 191 and 195 may be made of a metal having properties of an ohmic contact, an adhesive layer, and a bonding layer, and may not be transparent. The first and second electrodes 191 and 195 may be formed of a material selected from the group consisting of Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, And may be formed as a single layer or a multilayer.

5 is a graph showing the internal quantum efficiency of the comparative example and the embodiment.

Referring to FIG. 5, the comparative example, the first and second embodiments show the internal quantum efficiency (IQE). The comparative example is an internal quantum efficiency (IQE) of a nitride semiconductor device including a GaN / AlGaN / GaN barrier layer. The first embodiment is a GaN / (IQE) of the nitride semiconductor device including the AlGaN / InGaN / GaN barrier layer. The fourth semiconductor layer of the first embodiment is made of In _{0 . 04} Ga _{1 -} may include a semiconductor material having a composition formula of _0.04 N. The fourth semiconductor layer of the second embodiment is made of In _{0 . 0.0} Ga _&lt; RTI ID = 0.0 _{&gt; - 0.02} &lt; / RTI &gt; N.

It can be seen that the inner quantum efficiency (IQE) of the first and second embodiments is improved by the barrier layer including the indium composition, as compared with the comparative example.

6 is a cross-sectional view showing a semiconductor device according to another embodiment.

As shown in FIG. 6, the semiconductor device of another embodiment may include a second semiconductor layer 155 and a fourth semiconductor layer 157 having different band gaps. Structures other than the second semiconductor layer 155 and the fourth semiconductor layer 157 may adopt the technical features of the semiconductor device 101 of the embodiment of Figs. 1 to 5.

The second semiconductor layer 155 may be disposed between the first and fourth semiconductor layers 154 and 157 and directly contact the first and fourth semiconductor layers 154 and 157. The second semiconductor layer 155 may include at least one of AlGaN, AlGaAs, and AlInGaP. For example, the second semiconductor layer 155 may include a semiconductor material having a composition formula of Al _z Ga _{1 - z} N (0 <z <1).

The second semiconductor layer 155 may include second and fifth bad gaps G2 and G5 that are larger than the first band gap G1 of the first semiconductor layer 154. [ The second and fifth band gaps G2 and G5 are larger than the third band gap G3 of the third semiconductor layer 156 and the first and third band gaps G1 and G3 may be equal to each other However, the present invention is not limited thereto. The energy band of the active layer 150 of the nitride-based semiconductor is bent by the electric field, and the carrier overflow can be intensified by the bending energy band. Another embodiment includes a second semiconductor layer 155 comprising second and fifth bandgaps G2 and G5 that are higher than the first and third semiconductor layers 154 and 156, Carrier overflow can be improved.

The band gap of the second semiconductor layer 155 may be gradually reduced from the first conductivity type semiconductor layer 40 toward the second conductivity type semiconductor layer 60. The fifth band gap G5 of the first barrier layer 153 adjacent to the first conductivity type semiconductor layer 40 may be larger than the second band gap G5 of the second barrier layer 153L adjacent to the second conductivity type semiconductor layer 60, May be larger than the gap G2. In another embodiment, the band gap of the second semiconductor layer 155 is gradually reduced toward the second conductive semiconductor layer 60, thereby improving the blocking function of electrons, improving the injection efficiency of holes and improving the luminous flux .

The aluminum composition (z) of the second semiconductor layer 155 may be 1% to 15%, and specifically 1% to 8%. If the aluminum composition (z) is less than 1%, it is difficult to improve the carrier overflow by tunneling. If the aluminum composition (z) exceeds 15%, the crystal quality may deteriorate depending on aluminum.

When the thickness of the second semiconductor layer 155 is T2 and the total thickness of one barrier layer 151 is T0, the ratio of T2: T0 may be 0.6: 1.0 to 0.8: 1.0. Specifically, the thickness of the second semiconductor layer 155 may be 80% or less of the total thickness of one barrier layer 151. For example, when the total thickness of the barrier layer 151 is 5 nm, the thickness of the second semiconductor layer 155 may be 4 nm or less.

When the thickness of the second semiconductor layer 155 exceeds 80% of the total thickness of one barrier layer 151, the thickness of the second semiconductor layer 155 including the aluminum composition (z) The thickness may become thick and the crystal quality may be deteriorated. As a result, the operating voltage may increase due to a decrease in carrier injection efficiency and the like.

The fourth semiconductor layer 157 may be disposed between the second and third semiconductor layers 155 and 156 and may be in direct contact with the second and third semiconductor layers 155 and 156. The fourth semiconductor layer 157 may include an indium composition. For example, the fourth semiconductor layer 157 is In _q Ga _{1 -} may include a semiconductor material having a compositional formula of _{q N (0 <q <1} ). The fourth semiconductor layer 157 may include a function of improving the band gap difference between the second semiconductor layer 155 and the third semiconductor layer 156 and improving the droplet by improving the hole injection efficiency .

The fourth semiconductor layer 157 may include sixth and seventh bad gaps G6 and G7 that are larger than the first band gap G1 of the first semiconductor layer 154. [ The sixth and seventh bad gaps G6 and G7 are larger than the third band gap G3 of the third semiconductor layer 156 and larger than the second bend gap G2 of the second semiconductor layer 155 Can be small. Here, the first and third band gaps G1 and G3 may be equal to each other, but are not limited thereto.

The second semiconductor layer 155 is formed between the second semiconductor layer 155 and the third semiconductor layer 156 in order to improve the droop phenomenon due to the bandgap rising along the second semiconductor layer 155. [ And a fourth semiconductor layer 57 having a bandgap between the third semiconductor layer 156 and the third semiconductor layer 156, thereby improving the droplet.

The band gap of the fourth semiconductor layer 157 may be gradually reduced from the first conductivity type semiconductor layer 40 toward the second conductivity type semiconductor layer 60. For example, the seventh band gap G7 of the first barrier layer 153 adjacent to the first conductive semiconductor layer 40 is the same as the sixth band gap G7 of the second barrier layer 153L adjacent to the second conductivity type semiconductor layer 60, May be larger than the gap G6. In another embodiment, the band gap of the fourth semiconductor layer 157 becomes gradually smaller toward the second conductivity type semiconductor layer 60, thereby improving the hole injection efficiency and improving the droop.

The indium composition q of the fourth semiconductor layer 157 may be 1% to 6%, and may be 1% to 4%. If the indium composition (q) is less than 1%, it may be difficult to improve the droplet. If the indium composition (q) is more than 5%, the crystal quality may deteriorate and the improvement of the droplet may be difficult.

The thickness of the fourth semiconductor layer 157 may be 0.1 nm to 1 nm. If the thickness of the fourth semiconductor layer 157 is less than 0.1 nm, the hole injection efficiency may be lowered and the improvement of the droop may be difficult. If the thickness of the fourth semiconductor layer 157 is greater than 1 nm, the crystal quality may deteriorate and the droop improvement may be difficult.

The embodiment can improve the operating voltage by improving the carrier overflow by the second semiconductor layer 155 having a band gap larger than that of the first and third semiconductor layers 154 and 156 and the second semiconductor layer 155 The band gap difference between the second semiconductor layer 155 and the third semiconductor layer 156 is improved by the fourth semiconductor layer 157 having a band gap between the second semiconductor layer 155 and the third semiconductor layer 156, The droplet can be improved by improving the injection efficiency.

7 is a cross-sectional view showing a semiconductor device according to still another embodiment.

As shown in FIG. 7, the semiconductor device of another embodiment may include a second semiconductor layer 255 and a fourth semiconductor layer 257 having different band gaps. Structures other than the second semiconductor layer 255 and the fourth semiconductor layer 257 may adopt the technical features of the semiconductor device 101 of the embodiment of FIGS. 1 to 5.

The plurality of barrier layers 253 of another embodiment may include first to fourth semiconductor layers 254, 255, 256, and 257. The first to fourth semiconductor layers 254, 255, 256, and 257 may employ the technical features of the semiconductor device 101 of the embodiment.

The active layer 250 of another embodiment may include a last barrier layer 253L having a constant bandgap.

The barrier layer 253L may include a lower band gap than the second and fourth semiconductor layers 255 and 257 of the plurality of barrier layers 253. The last barrier layer 253L may be adjacent to the second conductivity type semiconductor layer 60. The last barrier layer 253L may be in direct contact with the fifth semiconductor layer 70, but is not limited thereto. The last barrier layer 253L may be any one of GaN, InGaN, GaAs, InGaAs, GaP, and InP, but is not limited thereto.

Another embodiment does not include an aluminum composition or the last barrier layer 253L, which is lower than the second semiconductor layer 255 and the fourth semiconductor layer 257 and has a constant band gap, is disposed to maintain the blocking function of electrons And the luminous flux can be improved by improving the injection efficiency of the holes.

8 is a view showing a vertical type semiconductor device.

8, the vertical type semiconductor device 102 has a configuration except for the second electrode 395, the channel layer 383, and the current blocking layer 385 in the semiconductor device of FIGS. 1 to 5 101 can be adopted.

The semiconductor device 102 may include a first electrode 391 on the first conductive semiconductor layer 40 and a second electrode 395 disposed on the opposite side of the first electrode 391.

The second electrode 395 is disposed under the second conductive semiconductor layer 60 and may include a conductive layer 381, a reflective layer 397, a bonding layer 398, and a support member 399.

The conductive layer 381 may be disposed on the second conductive semiconductor layer 60. The conductive layer 381 may be in ohmic contact with the second conductive semiconductor layer 60 and may include at least one conductive material. The conductive layer 381 may be a single layer or a multilayer.

The conductive layer 381 may include at least one of a metal, a metal oxide, and a metal nitride material. The conductive layer 381 may include a light-transmitting material. For example, the conductive layer 381 may include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO ITO, Ni / IrOx / Au, Ni / IrOx / ITO, IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / Au / ITO, Pt, Ni, Au, Rh, or Pd.

The reflective layer 397 may be disposed on the conductive layer 381. The reflective layer 397 is formed of a structure including at least one layer made of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, .

The bonding layer 398 may be disposed on the reflective layer 397. The bonding layer 398 may be disposed between the support member 399 and the reflective layer 397. The bonding layer 398 may be used as a barrier metal or a bonding metal and the material may be selected from the group consisting of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, And may include at least one.

The support member 399 may be disposed on the bonding layer 398. The support member 399 may be formed of a conductive material such as Cu-copper, Au-gold, Ni-nickel, molybdenum (Mo), copper-tungsten (Cu- W), a carrier wafer (e.g., Si, Ge, GaAs, ZnO, SiC, etc.). As another example, the support member 398 may be embodied as a conductive sheet.

A channel layer 383 and a current blocking layer 385 may be disposed between the second conductive semiconductor layer 60 and the second electrode 395, but the structure is not limited thereto.

The channel layer 383 may be disposed in an edge region of the second conductive semiconductor layer 60, and may be formed in a ring shape, a loop shape, or a frame shape. A part of the channel layer 383 may be disposed outside the second conductive semiconductor layer 60. The channel layer 383 comprises a transparent conductive material or an insulating material, such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ , and TiO ₂ . The inner side of the channel layer 383 is disposed below the third semiconductor layer 60 and the outer side is disposed further outward than the side surface of the light emitting structure.

The current blocking layer 385 may be disposed between the second conductive semiconductor layer 60 and the reflective layer 397. The current blocking layer 385 includes an insulating material such as SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ As shown in FIG. As another example, the current blocking layer 385 may also be formed of a metal for Schottky contact.

The current blocking layer 385 may overlap the first electrode 391 in the vertical direction. The current blocking layer 385 and the first electrode 391 may be disposed with the light emitting structure 10 therebetween. The current blocking layer 385 may block current flowing in the shortest distance between the first and second electrodes 391 and 395 and guide the current blocking layer 385 to a different path to realize a current spreading effect. The current blocking layer 385 may be disposed in one or plural layers, and at least a part of the current blocking layer 385 may overlap with the first electrode 391 in the vertical direction.

Here, a light extracting structure (not shown) such as a roughness may be formed on the upper surface of the first conductive semiconductor layer 40. An insulating layer (not shown) may be further disposed on the first conductive semiconductor layer 40, the side of the light emitting structure 10, and the channel layer 383, but the present invention is not limited thereto.

The semiconductor device 102 includes an active layer 50 having a second semiconductor layer having a larger bandgap than the first and third semiconductor layers and having a barrier layer disposed between the first and third semiconductor layers, It is possible to improve the luminance by 1% or more while maintaining the operating voltage by improving the flow.

That is, the external quantum efficiency (EQE) of the semiconductor device 102 is improved as the current density increases.

The semiconductor device 102 may further include a barrier layer including a fourth semiconductor layer having a larger bandgap than the first and third semiconductor layers and having an indium composition smaller than that of the second semiconductor layer, And improve the crystal quality to improve the internal quantum efficiency (IQE).

FIG. 9 is a view showing a light emitting device package including the semiconductor devices of FIGS. 1 to 8. FIG.

9, the light emitting device package includes a body 311 having a cavity 315, a first lead frame 321 and a second lead frame 323 disposed in the body 311, a semiconductor element 101, 102, wires 331, and a molding member 341.

The body 311 may include a conductive or insulating material. The body 311 may include at least one of a resin material such as polyphthalamide (PPA), a silicon (Si), a metal material, a photo sensitive glass (PSG), a sapphire (Al ₂ O ₃ ), a printed circuit board Can be formed. The body 311 may include a resin material such as polyphthalamide (PPA) or epoxy.

The body 311 has a cavity 315 having an open top and a side and a bottom. The cavity 315 may include a concave cup structure or a recessed structure from the upper surface of the body 311, but the present invention is not limited thereto.

The first lead frame 321 is disposed in a first region of a bottom region of the cavity 315 and the second lead frame 323 is disposed in a second region of a bottom region of the cavity 315. The first lead frame 321 and the second lead frame 323 may be spaced apart from each other in the cavity 315.

The first and second lead frames 321 and 323 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum ), Platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P) and may be formed of a single metal layer or a multilayer metal layer.

The semiconductor elements 101 and 102 may be disposed on at least one of the first and second lead frames 321 and 323 and may be disposed on the first lead frame 321 1 and the second lead frames 321, 323, respectively.

The semiconductor devices 101 and 102 can selectively emit light in the range of the visible light band to the ultraviolet light band and can be selected from a red LED chip, a blue LED chip, a green LED chip, and a yellow green LED chip, for example. have. The semiconductor devices 101 and 102 may include Group III-V or Group II-VI compound semiconductors. The semiconductor devices 101 and 102 may employ the technical features of FIGS.

A molding member 341 is disposed in the cavity 315 of the body 311 and the molding member 341 includes a light transmitting resin layer such as silicon or epoxy and may be formed as a single layer or a multilayer. The phosphor may include a phosphor for changing the wavelength of light emitted from the molding member 341 or the semiconductor elements 101 and 102. The phosphor may partially excite light emitted from the semiconductor elements 101 and 102, And emits light of a different wavelength. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 341 may be formed in a flat shape, a concave shape, a convex shape, or the like, but is not limited thereto.

A lens may be further formed on the upper portion of the body 311. The lens may include a concave or convex lens structure. The light may be emitted from the semiconductor elements 101, 102, distribution can be adjusted.

A protective element may be disposed in the light emitting device package. The protection device may be realized with a thyristor, a zener diode, or a TVS (Transient Voltage Suppression).

Wherein the light emitting device package includes an active layer having a second semiconductor layer having a larger bandgap than the first and third semiconductor layers, the active layer having a barrier layer disposed between the first and third semiconductor layers, The light intensity can be improved by 1% or more in the state where the voltage is maintained.

That is, the external quantum efficiency (EQE) of the light emitting device package is improved as the current density increases.

The light emitting device package may further include a barrier layer including a fourth semiconductor layer having a larger bandgap than the first and third semiconductor layers and an indium composition having a smaller bandgap than the second semiconductor layer, , And improve the crystal quality to improve the internal quantum efficiency (IQE).

The above-described semiconductor device package can be used as a light source of an illumination system. The semiconductor device package can be used as a light source of a video display device or a lighting device, for example.

When used as a backlight unit of a video display device, it can be used as an edge-type backlight unit or as a direct-type backlight unit. When used as a light source of a lighting device, it can be used as a regulator or bulb type. It is possible.

The semiconductor device includes a laser diode in addition to the light emitting diode described above.

The laser diode may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure, similarly to the semiconductor device. Then, electro-luminescence (electroluminescence) phenomenon in which light is emitted when an electric current is applied after bonding the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor is used, And phase. That is, the laser diode can emit light having one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. It can be used for optical communication, medical equipment and semiconductor processing equipment.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts the intensity of the light into an electric signal, is exemplified. As photodetectors, photodiodes (silicon, selenium), photoconductive elements (cadmium sulfide, cadmium selenide), photodeposition diodes (for example, visible blind spectral regions or PDs with peak wavelengths in the true blind spectral region) Process transistors, photomultiplier tubes, phototube (vacuum, gas-filled), and IR (Infra-Red) detectors, but the embodiments are not limited thereto.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have.

The photodiode, like the semiconductor device, can include the first conductivity type semiconductor layer having the above-described structure, the active layer and the second conductivity type semiconductor layer, and is formed of a pn junction or a pin structure. The photo-process diode operates by applying a reverse bias or a zero bias. When light is incident on the photo-process diode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be approximately proportional to the intensity of the light incident on the photo-process diode.

A photovoltaic cell or a solar cell is a type of photodiode diode, which can convert light into current. The solar cell may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure, like the semiconductor device.

In addition, it can be used as a rectifier of an electronic circuit through a rectifying characteristic of a general diode using a p-n junction, and can be applied to an oscillation circuit or the like by being applied to a microwave circuit.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor device such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, Or may be implemented using a doped semiconductor material or an intrinsic semiconductor material. While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

20: substrate
30: buffer layer
40: First conductive type semiconductor layer
50, 150, 250: active layer
51: a plurality of well layers
53, 153, 253: a plurality of barrier layers
53L, 153L, and 253L: Last barrier layer
54, 154: first semiconductor layer
55, 155: second semiconductor layer
56, 156: a third semiconductor layer
57. 157: fourth semiconductor layer
60: second conductive type semiconductor layer
70: a fifth semiconductor layer
80: conductive layer

Claims (14)

A first conductive semiconductor layer;
An active layer including a plurality of well layers and a plurality of barrier layers on the first conductivity type semiconductor layer; And
And a second conductivity type semiconductor layer disposed on the active layer,
Wherein each of the plurality of barrier layers comprises a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a third semiconductor layer disposed on the second semiconductor layer, and a second semiconductor layer disposed between the second and third semiconductor layers And a fourth semiconductor layer disposed,
Wherein the second semiconductor layer comprises an aluminum composition and comprises a bandgap higher than the first and third semiconductor layers,
Wherein the fourth semiconductor layer comprises an indium composition and includes a bandgap between the second semiconductor layer and the third semiconductor layer,
Wherein a thickness of the first semiconductor layer is equal to or greater than a total thickness of the third and fourth semiconductor layers. The method according to claim 1,
And the indium composition of the fourth semiconductor layer is 1% to 6%. The method according to claim 1,
And the fourth semiconductor layer has a thickness of 0.1 nm to 1 nm. The method according to claim 1,
Wherein the band gap of the fourth semiconductor layer is gradually reduced toward the second conductivity type semiconductor layer. The method according to claim 1,
Wherein the plurality of barrier layers include a last barrier layer adjacent to the second conductivity type semiconductor layer,
Wherein the last barrier layer is lower than the other barrier layers and has a constant band gap. The method according to claim 1,
Wherein the thickness of the second semiconductor layer is larger than the thickness of the first, third, and fourth semiconductor layers. The method according to claim 1,
The ratio between the thickness of the first semiconductor layer and the thickness of one barrier layer is 0.01: 1.0 to 0.1: 1.0,
The ratio between the thickness of the second semiconductor layer and the thickness of the one barrier layer is 0.6: 1.0 to 0.8: 1.0,
Wherein a ratio between a total thickness of the third and fourth semiconductor layers and a thickness of one barrier layer is 0.1: 1.0 to 0.3: 1.0. The method according to claim 1,
The first and third semiconductor layers may be any one of GaN, InGaN, GaAs, InGaAs, GaP, and InP,
Wherein the second semiconductor layer comprises at least one of AlGaN, AlGaAs, and AlInGaP. The method according to claim 1,
And the aluminum composition of the second semiconductor layer is 1% to 15%. The method according to claim 1,
Wherein a band gap of the second semiconductor layer is gradually reduced toward the second conductivity type semiconductor layer. 6. The method of claim 5,
Wherein the last barrier layer comprises any one of GaN, InGaN, GaAs, InGaAs, GaP, and InP. The method according to claim 1,
And a fifth semiconductor layer between the active layer and the second conductive semiconductor layer,
Wherein a band gap of the second semiconductor layer and a band gap of the fourth semiconductor layer are smaller than a band gap of the fifth semiconductor layer. The method according to claim 1,
Wherein the third semiconductor layer comprises a first region located farthest from the one barrier layer center region in one barrier layer,
Wherein the first semiconductor layer includes a second region located farthest from the one barrier layer center region,
And the second semiconductor layer is disposed closer to the second region. A body having a cavity;
First and second lead frames disposed in the body; And
A semiconductor device package comprising a semiconductor element according to any one of claims 1 to 13.

Images