KR20180084618A - 전력 증폭 모듈 - Google Patents

전력 증폭 모듈 Download PDF

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Publication number
KR20180084618A
KR20180084618A KR1020170173892A KR20170173892A KR20180084618A KR 20180084618 A KR20180084618 A KR 20180084618A KR 1020170173892 A KR1020170173892 A KR 1020170173892A KR 20170173892 A KR20170173892 A KR 20170173892A KR 20180084618 A KR20180084618 A KR 20180084618A
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KR
South Korea
Prior art keywords
amplifier
combiner
capacitor
output terminal
inductor
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KR1020170173892A
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English (en)
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KR102027800B1 (ko
Inventor
마사토시 하세
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가부시키가이샤 무라타 세이사쿠쇼
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Publication of KR20180084618A publication Critical patent/KR20180084618A/ko
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Publication of KR102027800B1 publication Critical patent/KR102027800B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/267—A capacitor based passive circuit, e.g. filter, being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
    • H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
    • H03F2201/3215—To increase the output power or efficiency

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

(과제) 고출력 전력 및 높은 선형성을 실현하는 전력 증폭 모듈을 제공한다.
(해결 수단) 전력 증폭 모듈은 입력 신호를 분배하는 분배 회로와, 제 1 증폭기와, 제 2 증폭기와, 합성부에 있어서 입력 신호의 증폭 신호를 출력하는 합성 회로와, 제 1 증폭기와 제 2 증폭기 사이를 접속하는 저항 소자와, 저항 소자에 병렬 접속된 제 1 커패시터를 구비하고, 합성 회로는 제 1 증폭기의 출력 단자와 합성부 사이에 직렬 접속된 제 1 인덕터와, 제 2 증폭기의 출력 단자와 합성부 사이에 직렬 접속된 제 2 인덕터와, 일단이 합성부에 접속되고, 타단이 접지된 제 2 커패시터를 구비하고, 제 1 증폭기의 출력 단자로부터 합성부를 경유하여 제 2 증폭기에 이르는 제 3 신호의 위상은 제 1 인덕터 및 제 2 커패시터에 있어서 대략 45° 지연되고, 제 2 인덕터 및 제 2 커패시터에 있어서 대략 45° 지연되고, 제 1 증폭기의 출력 단자로부터 제 1 커패시터를 경유하여 제 2 증폭기에 이르는 제 3 신호의 위상은 대략 90° 진행된다.
KR1020170173892A 2017-01-17 2017-12-18 전력 증폭 모듈 KR102027800B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017006036A JP2018117217A (ja) 2017-01-17 2017-01-17 電力増幅モジュール
JPJP-P-2017-006036 2017-01-17

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Publication Number Publication Date
KR20180084618A true KR20180084618A (ko) 2018-07-25
KR102027800B1 KR102027800B1 (ko) 2019-10-02

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US (3) US10396722B2 (ko)
JP (1) JP2018117217A (ko)
KR (1) KR102027800B1 (ko)
CN (2) CN108336971B (ko)
TW (1) TWI637590B (ko)

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CN110120789A (zh) * 2018-12-19 2019-08-13 佛山臻智微芯科技有限公司 一种带有高次谐波抑制的宽带匹配电路结构

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JP2018117217A (ja) * 2017-01-17 2018-07-26 株式会社村田製作所 電力増幅モジュール
JP6973068B2 (ja) * 2017-12-28 2021-11-24 富士通株式会社 増幅器
CN109560780B (zh) * 2019-01-31 2023-09-19 合肥盛芯世纪信息科技有限公司 一种5g基站功率放大器
JP2020129712A (ja) * 2019-02-07 2020-08-27 株式会社村田製作所 電力増幅回路
US20210175853A1 (en) * 2019-12-10 2021-06-10 Murata Manufacturing Co., Ltd. Power amplifier
US11342887B2 (en) * 2019-12-18 2022-05-24 Nxp Usa, Inc. Wideband RF power splitters and amplifiers including wideband RF power splitters
CN112511114B (zh) * 2020-12-11 2023-02-24 重庆西南集成电路设计有限责任公司 一种具有功率分配功能的低噪声放大器
CN113037234B (zh) * 2021-05-24 2021-08-20 成都市克莱微波科技有限公司 一种宽带大功率合成方法

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
TW201828591A (zh) 2018-08-01
TWI637590B (zh) 2018-10-01
US11296656B2 (en) 2022-04-05
CN108336971B (zh) 2022-01-11
US10396722B2 (en) 2019-08-27
KR102027800B1 (ko) 2019-10-02
US10756681B2 (en) 2020-08-25
US20200350873A1 (en) 2020-11-05
US20190341889A1 (en) 2019-11-07
CN207884579U (zh) 2018-09-18
US20180226922A1 (en) 2018-08-09
CN108336971A (zh) 2018-07-27
JP2018117217A (ja) 2018-07-26

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