KR20180078018A - 전계 발광 표시 장치 및 그 제조 방법 - Google Patents
전계 발광 표시 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20180078018A KR20180078018A KR1020160182953A KR20160182953A KR20180078018A KR 20180078018 A KR20180078018 A KR 20180078018A KR 1020160182953 A KR1020160182953 A KR 1020160182953A KR 20160182953 A KR20160182953 A KR 20160182953A KR 20180078018 A KR20180078018 A KR 20180078018A
- Authority
- KR
- South Korea
- Prior art keywords
- driving transistor
- transistor
- switching transistor
- semiconductor layer
- voltage
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 22
- 238000001312 dry etching Methods 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 68
- 238000010586 diagram Methods 0.000 description 17
- 238000005070 sampling Methods 0.000 description 16
- 230000003071 parasitic effect Effects 0.000 description 14
- 241000750042 Vini Species 0.000 description 13
- 230000004044 response Effects 0.000 description 12
- 208000033361 autosomal recessive with axonal neuropathy 2 spinocerebellar ataxia Diseases 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 206010047571 Visual impairment Diseases 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 101100065878 Caenorhabditis elegans sec-10 gene Proteins 0.000 description 1
- 101100065885 Caenorhabditis elegans sec-15 gene Proteins 0.000 description 1
- 101100172879 Caenorhabditis elegans sec-5 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 101000885321 Homo sapiens Serine/threonine-protein kinase DCLK1 Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 102100039758 Serine/threonine-protein kinase DCLK1 Human genes 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000002743 phosphorus functional group Chemical group 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H01L27/3262—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H01L2227/323—
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160182953A KR20180078018A (ko) | 2016-12-29 | 2016-12-29 | 전계 발광 표시 장치 및 그 제조 방법 |
| CN202210440653.6A CN114709236A (zh) | 2016-12-29 | 2017-06-06 | 电致发光显示设备 |
| CN201710419260.6A CN108269822B (zh) | 2016-12-29 | 2017-06-06 | 电致发光显示设备及其制备方法 |
| US15/623,863 US9991312B1 (en) | 2016-12-29 | 2017-06-15 | Electroluminescence display apparatus and manufacturing method thereof |
| EP17180533.6A EP3343624B1 (en) | 2016-12-29 | 2017-07-10 | Electro-luminescence display apparatus and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160182953A KR20180078018A (ko) | 2016-12-29 | 2016-12-29 | 전계 발광 표시 장치 및 그 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20180078018A true KR20180078018A (ko) | 2018-07-09 |
Family
ID=59313122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160182953A KR20180078018A (ko) | 2016-12-29 | 2016-12-29 | 전계 발광 표시 장치 및 그 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9991312B1 (zh) |
| EP (1) | EP3343624B1 (zh) |
| KR (1) | KR20180078018A (zh) |
| CN (2) | CN108269822B (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210113513A (ko) | 2020-03-06 | 2021-09-16 | 삼성디스플레이 주식회사 | 발광 표시 장치 및 그 제조 방법 |
| CN114155815B (zh) * | 2022-01-21 | 2023-04-18 | 京东方科技集团股份有限公司 | 像素电路、像素驱动方法和显示装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW522454B (en) * | 2000-06-22 | 2003-03-01 | Semiconductor Energy Lab | Display device |
| JP5037766B2 (ja) * | 2001-09-10 | 2012-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2003298059A (ja) * | 2002-03-29 | 2003-10-17 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜トランジスタ |
| US6933241B2 (en) * | 2002-06-06 | 2005-08-23 | Nec Corporation | Method for forming pattern of stacked film |
| KR20050052029A (ko) * | 2003-11-28 | 2005-06-02 | 삼성에스디아이 주식회사 | 박막트랜지스터 |
| WO2007017982A1 (ja) * | 2005-08-11 | 2007-02-15 | Sharp Kabushiki Kaisha | 回路基板、電子装置、及び、回路基板の製造方法 |
| KR101324756B1 (ko) | 2005-10-18 | 2013-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그의 구동방법 |
| US7794617B2 (en) * | 2006-03-23 | 2010-09-14 | Tokyo Electron Limited | Plasma etching method, plasma processing apparatus, control program and computer readable storage medium |
| US8759166B2 (en) | 2009-12-14 | 2014-06-24 | Sharp Kabushiki Kaisha | Method for manufacturing thin film transistor device |
| JP6226518B2 (ja) * | 2011-10-24 | 2017-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI624936B (zh) * | 2013-06-05 | 2018-05-21 | 半導體能源研究所股份有限公司 | 顯示裝置 |
| US9905589B2 (en) * | 2013-12-03 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6436660B2 (ja) * | 2014-07-07 | 2018-12-12 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
-
2016
- 2016-12-29 KR KR1020160182953A patent/KR20180078018A/ko not_active Application Discontinuation
-
2017
- 2017-06-06 CN CN201710419260.6A patent/CN108269822B/zh active Active
- 2017-06-06 CN CN202210440653.6A patent/CN114709236A/zh active Pending
- 2017-06-15 US US15/623,863 patent/US9991312B1/en active Active
- 2017-07-10 EP EP17180533.6A patent/EP3343624B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108269822B (zh) | 2022-05-13 |
| US9991312B1 (en) | 2018-06-05 |
| EP3343624A1 (en) | 2018-07-04 |
| CN114709236A (zh) | 2022-07-05 |
| CN108269822A (zh) | 2018-07-10 |
| EP3343624B1 (en) | 2020-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11749198B2 (en) | Pixel and organic light emitting display device having the same | |
| EP3098805B1 (en) | Organic light emitting display and circuit thereof | |
| US10903250B2 (en) | Display device having power line electrically connected to electrode layers located above and below transistor | |
| US20180211601A1 (en) | Amoled pixel driver circuit and pixel driving method | |
| US10147355B2 (en) | Pixel circuit and display device | |
| TWI607428B (zh) | 顯示單元及其製造方法及電子裝置 | |
| US9905171B2 (en) | Display, display drive circuit, display drive method, and electronic apparatus | |
| KR102578840B1 (ko) | 유기발광 표시장치 | |
| KR101676223B1 (ko) | 유기발광 표시장치 | |
| KR20160141366A (ko) | 유기발광 표시장치 | |
| US20240206256A1 (en) | Display panel and display device | |
| US7335914B2 (en) | Display, array substrate, and display manufacturing method | |
| US9991312B1 (en) | Electroluminescence display apparatus and manufacturing method thereof | |
| KR101840123B1 (ko) | 유기발광 표시장치 및 그의 회로 | |
| KR20050116206A (ko) | 발광 표시장치 | |
| KR101972490B1 (ko) | 유기발광 표시장치 | |
| KR20180023112A (ko) | 유기발광 표시장치 | |
| KR102595499B1 (ko) | 유기발광 표시장치 | |
| KR102543038B1 (ko) | 유기전계발광표시장치 및 이의 제조방법 | |
| KR20190080546A (ko) | 광 센서를 포함하는 표시 장치 | |
| JP2009128685A (ja) | 表示装置および電子機器 | |
| KR20180002154A (ko) | 유기발광 표시장치 및 그의 구동 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal |