KR20180076161A - Wire saw apparatus - Google Patents

Wire saw apparatus Download PDF

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Publication number
KR20180076161A
KR20180076161A KR1020160180317A KR20160180317A KR20180076161A KR 20180076161 A KR20180076161 A KR 20180076161A KR 1020160180317 A KR1020160180317 A KR 1020160180317A KR 20160180317 A KR20160180317 A KR 20160180317A KR 20180076161 A KR20180076161 A KR 20180076161A
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South Korea
Prior art keywords
wire
ingot
guide
length
wafer
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KR1020160180317A
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Korean (ko)
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KR101967192B1 (en
Inventor
우남규
장순호
배동우
이보람
백성선
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웅진에너지 주식회사
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Priority to KR1020160180317A priority Critical patent/KR101967192B1/en
Priority to PCT/KR2017/012840 priority patent/WO2018124465A2/en
Publication of KR20180076161A publication Critical patent/KR20180076161A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8593—Reshaping, e.g. for severing the wire, modifying the wedge or ball or the loop shape

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention relates to a wire saw apparatus for producing a wafer by cutting a single crystal silicon ingot. According to an embodiment of the present invention, there is provided an ingot support structure, comprising: an ingot support member for supporting the ingot; a wire for cutting the ingot located at a lower portion of the ingot support member; and a plurality of guide grooves formed in a cylindrical shape, And a wire saw device including a support protrusion for supporting the wire, the wire protector being formed in a shape of an isosceles trapezoid in cross section between the plurality of guide grooves.

Description

[0001] The present invention relates to a wire saw apparatus,

The present invention relates to a wire saw apparatus for producing a wafer by cutting a single crystal silicon ingot.

A wafer widely used as a material for manufacturing semiconductor devices refers to a single crystal silicon thin plate. These wafers are prepared by cutting a single crystal silicon ingot, cleaning a plurality of cut wafers, separating the wafers into sheets, and then performing a post-cleaning process.

Monocrystalline silicon ingots are generally grown and manufactured according to the Czochralski method. This method is a method of melting monocrystalline silicon in a crucible in a chamber, immersing a single crystal seed crystal into molten silicon, gradually growing it, and growing it into a silicon single crystal ingot of a desired diameter.

After the growth of the ingot is completed, a slicing process for cutting the ingot into wafer units is performed. In this slicing step, there is a wire saw method in which a wire is run at a high speed and a slurry solution is sprayed thereon to cut the slurry by the friction between the slurry and the ingot.

In the conventional wire saw apparatus, the guide wire is wound around a plurality of grooved guide rollers before use. However, this method has the following problems.

Generally, the shape between the groove and the groove is formed in a triangular shape to prevent the wire from being separated from the groove, but a part of the upper end of the triangular projection between the groove and the groove can be separated as the process progresses. Some of the protruding protrusions may be buried on the surface of the wafer, causing damage to the wafer. In addition, when a large part of the projections are damaged, the wire is repelled outwardly and causes a process failure.

SUMMARY OF THE INVENTION The present invention is directed to provide a wire saw apparatus capable of improving efficiency in a wafer cutting process in order to solve the above-described problems.

The present invention is not limited thereto, and other objects not mentioned may be clearly understood by those skilled in the art from the following description.

The present invention provides a wire saw apparatus for cutting a single crystal silicon ingot to produce a wafer.

According to an embodiment of the present invention, a wire saw apparatus includes an ingot support member for supporting the ingot, a wire for cutting the ingot located at a lower portion of the ingot support member, and a wire- And a pair of guide rollers having a plurality of guide grooves formed thereon so that a plurality of guide grooves are formed on the guide grooves, wherein a support protrusion for supporting the wires is formed between the guide grooves and has an isosceles trapezoidal cross section.

According to an embodiment of the present invention, the length of the ridge (R), which is a shorter side of the two parallel sides of the isosceles trapezoid, is shorter than the thickness (t) of the wafer, the diameter A set angle [theta], which is an angle between two adjoining sides of two adjacent isosceles trapezoids in the cross section of the support protrusions, and a depth h that is the isosceles trapezoid height.

According to one embodiment, the length (W) of the ridgeline is

Figure pat00001

The value can be obtained using the formula.

According to an embodiment, the wire placed in the guide groove is located lower than the ridge, and the allowable length I, which is the distance between the ridgeline and the top end of the wire, may be larger than the diameter of the wire.

According to one embodiment, the margin length (I)

Figure pat00002

It can be obtained by using the formula.

According to one embodiment, the length of the pitch P, which is a long side of the two parallel sides of the isosceles trapezium, is shorter than the thickness t of the wafer and the diameter d of the wire, The value of which can be determined by the sum of the values.

According to one embodiment, the pair of guide rollers are positioned facing each other and the wire can be wound diagonally on the upper surface of the pair of guide rollers.

According to an embodiment, the wire may be wound diagonally on the lower surface of the pair of guide rollers.

According to one embodiment, the guide roller includes a roller body portion and a cover portion surrounding the outer circumferential surface of the roller body portion and having the guide groove and the support protrusion, and the cover portion may be made of a polyurethane material.

According to an embodiment of the present invention, the cross section of the support protrusions between the guide grooves on which the wires are seated is provided in the shape of an isosceles trapezoid, so that the efficiency of the ingot cutting process can be improved by suppressing the generation of foreign substances during the cutting process.

Further, according to an embodiment of the present invention, the wire is wound in a diagonal direction in a diagonal direction on the guide roller, thereby increasing the durability of the wire and improving the efficiency of the ingot cutting process.

Further, according to the embodiment of the present invention, the optimum value of the length and the allowance length of the ridges of the support protrusions can be determined, and the efficiency of the ingot cutting process can be improved.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is an exploded perspective view showing a wire saw apparatus according to an embodiment of the present invention.
2 is a front view showing a wire saw apparatus according to an embodiment of the present invention.
3 is a cross-sectional view showing a state in which the wire of the present invention is seated on a guide roller.
4 is a plan view showing a wire and a guide roller;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Accordingly, the shape of the elements in the figures may be exaggerated in order to emphasize a clearer description. In addition, terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary meanings, and the inventor should appropriately define the concept of the term to describe its invention in the best way possible. It should be construed as meaning and concept consistent with the technical idea of the present invention.

FIG. 1 is an exploded perspective view showing a wire saw apparatus according to an embodiment of the present invention, and FIG. 2 is a front view showing a wire saw apparatus according to an embodiment of the present invention.

1 and 2, the wire saw apparatus 1 includes an ingot supporting member 10, an ingot cutting member 20, a wire 21 supplying member 30, a wire 21 collecting member 40, A coolant jetting member 50, and an air supply member 60.

The ingot support member 10 can support the ingot S therein. The ingot support member 10 can support the ingot S by attaching it during the cutting process of the ingot S. The ingot support member (10) includes a support plate (11) and a beam (13).

The support plate 11 can support the beam 13. The support plate 11 can be attached to one side of the beam 13 using an adhesive member. As an example, the adhesive member may be provided as an epoxy.

The beam 13 can be supported by the support plate 11. The beam 13 may be provided in a shape elongated in one direction. The beam 13 may be provided longer than the ingot S. The ingot (S) may be attached to one surface of the beam (13). For example, the ingot S may be attached to the lower surface of the beam 13. The beam 13 may be provided in quartz.

The ingot cutting member 20 can cut the ingot S supported by the ingot supporting member 10. [ The ingot cutting member 20 includes a wire 21, a guide roller 23, and a motor 25.

The cutting particles can be fixed to the surface of the wire 21. As an example, the cutting particles may be provided as diamond particles. For example, the diamond particles may be formed on the wire 21 to have a predetermined size, and may be provided in a fixed form on the surface of the wire 21 through nickel electrodeposition.

The wire 21 can be wound on a guide roller 23 described later. For example, the wire 21 may be wound diagonally on the upper surface of the pair of guide rollers 23. Here, the diagonal direction refers to a behavior in which the pair of guide rollers 23 are obliquely wound around a vertical line in a direction opposite to each other. For example, the wire 21 may be wound in the form shown in FIG.

The efficiency of the cutting process can be improved by comparing the shape of the wire 21 wound in the diagonal direction and the shape of the wire 21 wound vertically when the ingot S is cut. In other words, as compared with when the wire 21 is wound in the diagonal direction and wound horizontally, the force received by the wire 21 rotating at a high speed is dispersed, so that the durability of the wire 21 can be improved.

The wire 21 can be wound in a diagonal direction on the lower surface of the pair of guide rollers 23. The wire 21 can be wound in the same manner as the wound form on the upper surface.

The guide rollers 23 may be positioned below the ingot supporting member 10. [ The wire 21 can be wound around the guide roller 23. [ At least one pair of guide rollers 23 may be provided. The guide roller 23 may be provided in a cylindrical shape. The guide roller 23 can be provided rotatably in one direction. The rotation direction of the guide roller 23 can be changed according to a predetermined time.

For example, the guide roller 23 can be rotated by receiving a rotational driving force from a motor 25 connected to the guide roller 23. The motor 25 can be engaged with the end of the guide roller 23. [

For example, the guide roller 23 may be rotated counterclockwise while rotating in the clockwise direction during the ingot S cutting process. The rotational direction of the guide roller 23 can be continuously changed during the process time.

The wire 21 can be continuously moved as the guide roller 23 rotates at a high speed while changing its direction continuously. The direction perpendicular to the longitudinal direction of the ingot S can be cut by the movement of the wire 21. [ The wafers can be produced in accordance with the cutting process of the wire 21.

The pair of guide rollers 23 may be spaced apart from each other by a predetermined distance. The wire 21 can be wound around the guide roller 23. [ The guide roller 23 may be provided with a guide groove 26 and a support protrusion 27. The guide roller 23 includes a roller body portion 24 and a cover portion 25.

The roller body portion 24 may be provided in a cylindrical shape. The roller body portion 24 may be provided with a material having good rigidity. For example, the roller body portion 24 may be made of a metal material.

The cover portion 25 may be provided so as to surround the outer circumferential surface of the roller body portion 24. The cover portion 25 can be provided with a durable material. For example, the cover portion 25 may be made of a polyurethane material. Alternatively, the cover portion 25 may be provided with another material having good durability.

The cover part 25 can be replaced with a new cover part 25 when the wire 21 is continuously cut and worn.

The cover portion 25 may be provided with a guide groove 26 and a support protrusion 27. The guide groove 26 may have a generally inverted triangular cross section. The innermost end of the guide groove 26 may be provided in a rounded shape. The wire 21 can be seated in the guide groove 26.

The support protrusions 27 can be positioned between the guide grooves 26. [ A plurality of support protrusions 27 may be provided. The supporting protrusions 27 may have an isosceles trapezoidal cross section. The support protrusion 27 can support the wire 21. [

The upper surface of the support protrusion 27 is provided as a flat surface without being protruded, so that the efficiency of the process can be improved without breaking during the wafer cutting process. In addition, since the durability is good and foreign matter is not generated, the defective process can be minimized.

The short side of two parallel sides of an isosceles trapezoidal shape is defined as a ridge. The long side of two parallel sides of an isosceles trapezoidal shape is defined as the pitch (P). The length W of the ridge is the angle between the two adjacent sides of two isosceles trapezoids adjacent to each other among the thickness t of the wafer to be produced, the diameter d of the wire 21, And the depth h, which is an isosceles trapezoidal height.

The pitch (P) value can be obtained by adding the thickness (t) of the wafer and the diameter (d) of the wire (21). This is because the distance between the wire 21 and the wire 21 in the process of cutting the ingot S with the wire 21 is determined as the thickness t of the wafer. The value of the pitch P of the support protrusions 27 between the wire 21 and the wire 21 can be obtained as the sum of the thickness t of the wafer and the diameter d of the wire 21. [

The length (W) of the ridge can be obtained from Eq. (1).

Figure pat00003

(Equation 1)

The same result can be obtained even if the sum of the thickness t of the wafer and the diameter d of the wire 21 is substituted for the pitch P value.

The wire 21 can be positioned lower than the ridge when it is seated in the guide groove 26. [ This is because the wire 21 must be lower than the ridgeline so that it can be stably stuck to the groove at the time of the process and is prevented from falling out.

The distance between the ridge and the top of the wire 21 is defined as the margin length I. The clearance length I may be provided to be larger than the diameter d of the wire 21. This is because the clearance length I is provided to be larger than the diameter d of the wire 21 so that the wire 21 stably stays in the guide groove 26 without deviating to the movement during the process.

The value of the allowable length (I) can be obtained from Equation (2).

Figure pat00004

(Equation 2)

The following table is a table showing the values of the length (W) and the allowable length (I) of the ridgelines obtained from the equations (1) and (2).

Setting angle (?) Wafer thickness (t) Wire diameter (d) Depth (h) Ridge length (W) Free length (I) 30 180 87 260 127.67 124.57 35 180 87 260 103.04 101.16 40 180 87 240 92.29 83.69 30 190 90 280 129.95 124.57 35 190 90 260 116.04 101.16 40 190 90 240 105.29 83.69

In Table 1, the setting angle? Is a unit of degree, and the thickness t of the wafer, the diameter 21 of the wire 21, the depth h, the length R of the ridgeline, and the margin length I are in units of μm.

Here, the wafer thickness t may vary depending on the thickness t of the wafer to be manufactured. The diameter d of the wire 21 may also be determined as the diameter d of the wire 21 to be used.

The thickness t of the wafer and the diameter d of the wire 21 are determined and the values of the length W of the ridgeline and the value of the margin length I Can be found. In this case, the values of the allowable length I are not included in the values of the third row of Table 1 or the sixth row of Table 1, which are smaller than the wire 21 diameter.

As shown in the remainder of Table 1, the values of the set angle θ and the depth h are determined in consideration of the ridge machining conditions among the values in which the allowable length I is larger than the diameter d of the wire 21, (W) and the margin length (I).

The wire 21 is positioned at a position lower than the ridgeline when the wire 21 is seated in the guide groove 26 through the above described equations 1 and 2 and the margin length I is provided to be larger than the diameter d of the wire 21, (21) can be prevented from being released. Equations (1) and (2) for determining the length (W) of the ridgeline are empirically derived from the fact that a flat surface rather than a pointed protrusion in the continuous process can minimize process defects.

The length W of the ridgeline can be determined through Equations 1 and 2 to improve the efficiency of the ingot S cutting process using the wire saw 1.

When the length (W) of the ridgeline is determined, if the length (W) of the ridge is too narrow, threading may occur during processing. Such a thread causes a problem that disconnection of the wire 23 occurs. In addition, foreign matter may be generated when a wafer is cut or a thread may be introduced to affect the quality of the wafer, thereby causing a process failure.

If the depth (h) value is set too deep, a thread is generated during machining and the above-described problem can be described.

Therefore, in the case of the present invention, by setting the appropriate depth depth (h) value, the length (W) value of the ridgeline is derived from Equation 1 and Equation 2 based on the depth depth h, Can be improved.

The wire 21 supply member 30 can supply the wire 21 to the guide roller 23. [ The wire 21 feed member 30 includes a feed bobbin 31, a first tension pulley 33, and a feed pulley 35.

The supply bobbin 31 may be disposed apart from the guide roller 23. The supply bobbin 31 may have a wire 21 wound thereon. The supply bobbin 31 can supply the wire 21 with the first tension pulley 33.

The first tension pulley 33 may be positioned below the supply bobbin 31. A plurality of first tension pulleys 33 may be provided. The first tension pulley 33 can impart a tension to the wire 21 to guide the advance of the wire 21. [

The feed pulley 35 may be positioned below the guide roller 23. [ The feed pulley 35 may be spaced apart from the guide roller 23 by a certain distance. The feed pulley 35 can change the entry position of the wire 21 entering the guide roller 23. [

The wire (21) collecting member (40) can collect the wire (21) fed to the guide roller (23). The wire 21 recovery member 40 includes a recovery bobbin 41, a second tension pulley 43, and a recovery pulley 45.

The recovery bobbin 41 may be disposed apart from the guide roller 23. The recovered wire 21 may be wound around the recovery bobbin 41. The recovery bobbin 41 can receive the wire 21 from the second tension pulley 43.

The second tension pulley 43 may be positioned below the recovery bobbin 41. A plurality of second tension pulleys 43 may be provided. The second tension pulley 43 can impart a tension to the wire 21 to guide the advance of the wire 21. [

The returning pulley 45 may be positioned below the guide roller 23. [ The take-up pulley 45 may be spaced apart from the guide roller 23 by a predetermined distance. The recovery pulley 45 can change the recovery position of the wire 21 recovered from the guide roller 23. [

The coolant injection member 50 supplies coolant when the ingot S is cut so that the ingot S can be easily cut by the wire 21. [

The coolant jetting member 50 includes a coolant jetting unit 51, a coolant supply unit 53, and a coolant collecting unit 55.

The coolant jetting section 51 may be located above the guide roller 23. A through hole may be formed in the coolant jetting section (51). The coolant jetting section (51) can jet the coolant through the through hole. A plurality of coolant jetting sections 51 may be provided. The coolant jetting portions 51 may be provided in a number corresponding to the number of the guide rollers 23. The coolant jetting section 51 can supply the coolant toward the wire 21. [

The coolant jetting section 51 may be connected to the coolant supply section 53 to supply the coolant. The coolant may include abrasive grains.

The coolant collecting section 55 may be installed on the lower side of the pair of guide rollers 23. [ The coolant collecting part 55 may be formed with a receiving groove 55a opened to the upper side. Coolant can be collected through the receiving groove 55a. A part of the coolant jetted by the pair of guide rollers 23 in the coolant jetting section 51 can be collected and collected in the receiving groove 55a of the coolant collecting section 55. [

The coolant collecting unit 55 may be connected to the coolant supply unit 53. The coolant collector 55 can move the collected coolant to the coolant supplier 53.

The air supply member 60 can jet air to the guide groove 26 of the guide roller 23. [ The air supply member 60 injects air into the guide grooves 26 to prevent foreign matter and coolants generated during the process from being seated in the guide grooves 26 to prevent the wires 21 from being released, ) Can be cleaned.

The air supply member 60 may include an air tube 61.

The air tube 61 may be located adjacent to the guide roller 23. [ An air discharge hole (63) may be formed in the air tube (61). The air tube 61 can receive air from the outside or a separate supply device and can discharge the air through the air discharge hole 63.

The air tube 61 may be formed in a cylindrical shape. The air tube 61 may be provided in the form of extending in the longitudinal direction of the guide roller 23 in the longitudinal direction.

As described above, according to the embodiment of the present invention, the end surface of the support protrusion 27 between the guide grooves 26 on which the wire 21 is seated is provided in an isosceles trapezoidal shape, The efficiency of the ingot S cutting process can be improved.

According to an embodiment of the present invention, the wire 21 is wound in a diagonal direction in a diagonal direction on the guide roller 23 to increase the durability of the wire 21 and to improve the efficiency of the ingot S cutting process have.

According to the embodiment of the present invention, the optimum value of the length W and the allowable length I of the ridge of the support protrusion 27 can be determined to improve the efficiency of the ingot S cutting process .

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The above-described embodiments illustrate the best mode for carrying out the technical idea of the present invention, and various modifications required for specific application fields and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

1: wire saw apparatus 10: ingot support member
20: ingot cutting member 21: wire
23: guide roller 26: guide groove
27: support protrusion 30: wire feed member
40: wire collecting member 50: coolant jetting member
60: Air supply member

Claims (9)

A wire saw apparatus for producing a wafer by cutting a single crystal silicon ingot,
An ingot supporting member for supporting the ingot;
And a pair of guide rollers disposed at a lower portion of the ingot support member and cutting the ingot and formed in a cylindrical shape and having a plurality of guide grooves formed on the outer circumferential surface so as to wind the wire, ,
And a support protrusion for supporting the wire is disposed between the plurality of guide grooves in a shape of an isosceles trapezoid. The method according to claim 1,
Wherein a length (W) of a short ridge which is located at an upper portion of two parallel sides of the isosceles trapezoid among the end faces of the support protrusions is determined by the thickness t of the wafer, the diameter d of the wire, Through a set angle (?), Which is an angle between two adjacent sides of two adjacent isosceles trapezoids, and a depth (h) value which is the isosceles trapezoid height. 3. The method of claim 2,
The length (W)
Figure pat00005

A wire saw device that uses a formula to obtain a value. The method of claim 3,
Wherein the wire seated in the guide groove is located lower than the ridgeline and the clearance length (I), which is the distance between the ridgeline and the uppermost end of the wire, is larger than the diameter of the wire. 5. The method of claim 4,
The allowable length (I)
Figure pat00006

A wire saw apparatus obtained by using a formula. 6. The method according to any one of claims 1 to 5,
The length of the pitch P, which is the long side of the two parallel sides of the isosceles trapezoid, is determined by the sum of the thickness t of the wafer and the diameter d of the wire Wire saw device. 6. The method according to any one of claims 1 to 5,
The pair of guide rollers are positioned facing each other,
Wherein the wire is wound in a diagonal direction on an upper surface of the pair of guide rollers. 8. The method of claim 7,
Wherein the wire is wound in a diagonal direction on a lower surface of the pair of guide rollers. 8. The method of claim 7,
The guide roller includes a roller body portion;
And a cover portion surrounding the outer peripheral surface of the roller body portion and having the guide groove and the support protrusion formed therein,
Wherein the cover portion is made of a polyurethane material.
KR1020160180317A 2016-12-27 2016-12-27 Wire saw apparatus KR101967192B1 (en)

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PCT/KR2017/012840 WO2018124465A2 (en) 2016-12-27 2017-11-14 Wire saw device

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CN114589820A (en) * 2020-12-07 2022-06-07 苏州阿特斯阳光电力科技有限公司 Cutting device and diamond wire cutting machine

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