KR20180073066A - Organic Light Emitting Display device having a dummy pattern for repair process - Google Patents

Abstract

The present invention relates to an organic light emitting display device having a dummy pattern for a repair process which improves reliability of a repair process by preventing absorption and refraction of a laser used for the repair process by insulating films stacked on a dummy pattern.

Description

[0001] The present invention relates to an organic light emitting display device having a dummy pattern for a repair process,

The present invention relates to an organic light emitting display in which a repair process is performed using a dummy pattern.

2. Description of the Related Art Generally, electronic devices such as a monitor, a TV, a notebook, a digital camera, and the like include a display device for implementing an image. For example, the display device may include a liquid crystal display device and an organic light emitting display device.

The OLED display may be a transparent display device. For example, each pixel region of the organic light emitting display may include a light emitting region and a transmissive region. In the light emitting region, a light emitting structure and components for controlling the light emitting structure may be located. The transmissive region can transmit external light.

The light emitting region may display various colors for realizing an image. For example, a blue light-emitting structure showing blue color, a red light-emitting structure showing red, a green light-emitting structure showing green, and a white light-emitting structure showing white may be located in the light emitting region. Each light emitting structure may include a lower light emitting electrode, an organic light emitting layer, and an upper light emitting electrode sequentially stacked.

In the organic light emitting diode display, defects of some light emitting structures may occur due to foreign substances generated during the formation process. The forming process of the organic light emitting diode display may include a repair process to minimize deterioration of image quality due to a defective light emitting structure. For example, the repairing process of the organic light emitting diode display may include a step of connecting a light emitting structure having a defect by using a dummy pattern and a repair electrode to a light emitting structure having the same color in an adjacent pixel region.

The process of connecting the light emitting structures may include a laser welding process. For example, the repairing process of the organic light emitting diode display may include a step of irradiating laser light to a region where the repair electrodes and the dummy patterns of the light emitting structures overlap each other to connect the repair electrodes with the dummy pattern.

However, since a plurality of insulating films are stacked on the dummy pattern and the repair electrode, in the organic light emitting display device, the laser irradiated for the repair process is absorbed and / or refracted by the stacked insulating films, . In addition, although the absorption and refraction of the laser by the insulating films can be prevented by irradiating the laser in the direction of the lower substrate, since the organic light emitting diode display has to be turned upside down, physical damage may occur, .

An object of the present invention is to provide an organic light emitting diode (OLED) display device capable of preventing damage of adjacent insulating films due to a laser irradiated for a repair process.

Another problem to be solved by the present invention is to provide an organic light emitting display device capable of performing a repair process without physical damage, and capable of preventing laser absorption and refraction by insulating films.

The problems to be solved by the present invention are not limited to the above-mentioned problems. Tasks not mentioned here will be apparent to the ordinarily skilled artisan from the description below.

According to an aspect of the present invention, there is provided an OLED display including a dummy pattern disposed on a lower substrate. A lower protective film is located on the lower substrate. The lower protective film covers the dummy pattern. A repair electrode is located on the lower protective film. The repair electrode includes a region overlapping with the dummy pattern. An upper overcoat layer is located on the repair electrode. The upper overcoat layer includes an upper through hole overlapping the dummy pattern. A bank insulating film is disposed on the upper overcoat layer. The bank insulating film includes bank through holes overlapping the upper through holes. A capping insulating film is located in the upper through hole on the repair electrode.

The capping insulating film can directly contact the repair electrode.

The capping insulating layer may extend on the side of the upper overcoat layer overlapping the dummy pattern.

The thickness of the capping insulating film on the repair electrode may be the same as the thickness of the capping insulating film on the side of the upper overcoat layer.

The capping insulating film may include the same material as the bank insulating film.

A thin film transistor may be positioned between the lower substrate and the lower protective film. The thin film transistor may be spaced apart from the dummy pattern. The dummy pattern may comprise the same material as one of the conductive layers of the thin film transistor.

A lower overcoat layer may be positioned between the lower substrate and the repair electrode. The lower overcoat layer may include a lower through hole overlapping the upper through hole. The repair electrode may extend inside the lower through-hole along the side of the lower overcoat layer.

The size of the upper through hole may be smaller than the size of the lower through hole.

According to another aspect of the present invention, there is provided an OLED display including a lower substrate. The lower substrate includes a light emitting region and a transmissive region. A repair electrode is positioned on the transmissive region of the lower substrate. A lower protective film is located between the lower substrate and the repair electrode. An upper overcoat layer is located on the repair electrode. The upper overcoat layer includes an upper through hole exposing a portion of the repair electrode. A bank insulating film is disposed on the upper overcoat layer. The bank insulating film includes bank through holes overlapping the upper through holes. A dummy pattern is located between the lower substrate and the lower protective film. The dummy pattern overlaps with the upper through-hole. The repair electrode exposed by the upper through-hole is covered by the capping insulating film.

The horizontal length of a portion of the repair electrode may be smaller than the horizontal length of the upper surface of the dummy pattern toward the repair electrode.

The capping insulating layer may extend between the repair electrode and the upper overcoat layer.

The capping insulating film may cover the repair electrode.

The light emitting structure may be located on the light emitting region of the lower substrate. The light emitting structure may include a lower light emitting electrode, an organic light emitting layer and an upper light emitting electrode sequentially stacked. The organic light emitting layer and the upper light emitting electrode may extend through the bank through hole and into the upper through hole.

The capping insulating film can directly contact the organic light emitting layer.

The upper overcoat layer may further include a contact hole spaced apart from the upper through hole and overlapped with the repair electrode. The lower luminous electrode may be connected to the repair electrode through the contact hole.

In the organic light emitting diode display according to the technical idea of the present invention, the laser for the repair process is irradiated in the direction of the upper substrate, and absorption and refraction of the laser by the insulating films can be prevented. Accordingly, in the organic light emitting diode display according to the technical idea of the present invention, the damage of the adjacent insulating layer due to the laser irradiated for the repair process can be prevented. Therefore, in the organic light emitting diode display according to the technical idea of the present invention, the time of the repair process can be shortened and the reliability can be improved.

1 is a view schematically showing a layout of an OLED display according to an embodiment of the present invention.
2A is a schematic cross-sectional view of an OLED display according to an embodiment of the present invention.
2B is a cross-sectional view taken along the line I-I 'in FIG.
3 to 5 are views showing an organic light emitting display according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

In the drawings, the same reference numerals denote the same components throughout the specification. In the drawings, the lengths and the thicknesses of layers or regions may be exaggerated for convenience. In addition, when the first component is described as being on the second component, it is preferable that the first component is located on the upper side in direct contact with the second component, And the third component is located between the second components.

Here, the terms first, second, etc. are used for describing various components and are used for the purpose of distinguishing one component from another component. However, the first component and the second component may be arbitrarily named according to the convenience of the person skilled in the art without departing from the technical idea of the present invention.

It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. For example, an element represented in singular form includes a plurality of elements unless the context clearly dictates a singular number. Also, in the specification of the present invention, the terms such as " comprises "or" having ", and the like, designate the presence of stated features, integers, steps, operations, elements, But do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

In addition, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the meaning in the context of the related art and, unless expressly defined in the specification of the present invention, are intended to mean either an ideal or an overly formal meaning It is not interpreted.

(Example)

1 is a view schematically showing a layout of an OLED display according to an embodiment of the present invention. 2A is a schematic cross-sectional view of an OLED display according to an embodiment of the present invention. 2B is a cross-sectional view taken along the line I-I 'in FIG.

1, 2A, and 2B, an OLED display according to an exemplary embodiment of the present invention includes a lower substrate 100, a lower protective layer 130, an auxiliary electrode 410, a repair electrode 430, a light emitting structure 500 And a capping insulating layer 600.

The lower substrate 100 may support the light emitting structure 500. The lower substrate 100 may include an insulating material. For example, the lower substrate 100 may comprise glass or plastic.

The lower substrate 100 may include pixel regions. Each pixel region may include a light emitting region EA and a transmissive region TA. The light emitting area EA may represent a color for realizing an image. A plurality of light emitting structures 500 may be disposed in the light emitting region EA. For example, a blue light emitting structure showing blue color, a red light emitting structure showing red color, a green light emitting structure showing green color and a white light emitting structure showing white color can be located in the light emitting region EA. The transmissive area TA may be transparent.

The gate line GL, the data lines DL1 to DL4, the sensing line SL, the reference voltage line Vref, and the power source voltage line VDD may be disposed on the lower substrate 100. The gate line GL may extend in one direction. The data lines DL1-DL4 may intersect the gate line GL. The data lines DL1 to DL4 may transmit data signals to the light emitting structure 500 located in the light emitting area EA. For example, the OLED display according to the embodiment of the present invention may include four data lines DL1-DL4. The sensing line SL may be parallel to the gate line GL. The reference voltage line Vref and the power source voltage line VDD may be parallel to the data lines DL1-DL4.

The gate line GL, the data lines DL1 to DL4, the sensing line SL, the reference voltage line Vref, and the power source voltage line VDD are formed in the emission region EA, Can be defined. For example, a circuit portion for controlling one of the light emitting structures 500 may be located in each sub-luminescent region. Each of the emission regions EA of the organic light emitting display according to the exemplary embodiment of the present invention includes the gate line GL, the data lines DL1 to DL4, the sensing line SL, the reference voltage line Vref, And four sub-luminescent regions partitioned by the power supply voltage line (VDD). For example, the selective thin film transistor TR1, the driving thin film transistor TR2, the sensing thin film transistor TR3, and the storage capacitor Cst may be located in each sub-emission region.

The selective thin film transistor TR1 may turn on / off the driving thin film transistor TR2 according to a gate signal applied through the gate line GL. The driving thin film transistor TR2 may supply a driving current to the light emitting structure 500 according to a signal of the selective thin film transistor TR1 and a data signal applied through the data lines DL1 to DL4. The degree of deterioration of each driving thin film transistor TR2 and / or each light emitting structure 500 can be detected by the corresponding sensing thin film transistor TR3. The storage capacitor Cst may maintain the signal of the selective thin film transistor TR1 applied to the driving thin film transistor TR2 for a predetermined period of time.

The structure of the selective thin film transistor TR1 and the sensing thin film transistor TR3 may be the same as that of the driving thin film transistor TR2. For example, the driving thin film transistor TR2 includes a semiconductor pattern 210, a gate insulating film 220, a gate electrode 230, an interlayer insulating film 240, a source electrode 250 and a drain electrode 260 .

The semiconductor pattern 210 may be positioned close to the lower substrate 100. The semiconductor pattern 210 may include a semiconductor material. For example, the semiconductor pattern 210 may include amorphous silicon or polycrystalline silicon. The semiconductor pattern 210 may include an oxide semiconductor material. For example, the semiconductor pattern 210 may include IGZO.

The semiconductor pattern 210 may include a source region, a drain region, and a channel region. The channel region may be located between the source region and the drain region. The conductivity of the channel region may be lower than the conductivity of the source region and the conductivity of the drain region. For example, the source region and the drain region may comprise a conductive impurity.

The organic light emitting display according to the embodiment of the present invention is described as the semiconductor pattern 210 of each of the thin film transistors TR1, TR2 and TR3 being in direct contact with the lower substrate 100. [ However, the OLED display according to another embodiment of the present invention may further include a buffer insulating layer disposed between the lower substrate 100 and the thin film transistors TR1, TR2, and TR3. The buffer insulating layer may extend outward of the semiconductor pattern 210. For example, the buffer insulating layer may entirely cover the surface of the lower substrate 100. The buffer insulating layer may include an insulating material. For example, the buffer insulating layer may include silicon oxide.

The gate insulating layer 220 may be located on the semiconductor pattern 210. The gate insulating layer 220 may include an insulating material. For example, the gate insulating layer 220 may include silicon oxide and / or silicon nitride. The gate insulating layer 220 may have a multi-layer structure. The gate insulating layer 220 may include a high-K material. For example, the gate insulating layer 220 may include hafnium oxide (HfO) or titanium oxide (TiO).

The gate electrode 230 may be positioned on the gate insulating layer 220. The gate electrode 230 may overlap the channel region of the semiconductor pattern 210. The gate electrode 230 may be insulated from the semiconductor pattern 210 by the gate insulating layer 220. For example, the gate electrode 230 may include a side surface that is vertically aligned with a side surface of the gate insulating layer 220. The side surface of the gate insulating layer 220 may be continuous with the side surface of the gate electrode 230.

The gate electrode 230 may include a conductive material. For example, the gate electrode 230 may include a metal such as aluminum (Al), chrome (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). The gate electrode 230 may have a multi-layer structure. The gate line GL may include the same material as the gate electrode 230. The gate electrode 230 may be located on the same layer as the gate line GL. For example, the structure of the gate line GL may be the same as the structure of the gate electrode 230.

The interlayer insulating layer 240 may be located on the semiconductor pattern 210 and the gate electrode 230. The interlayer insulating layer 240 may extend outwardly of the semiconductor pattern 210. For example, the interlayer insulating layer 240 may be in direct contact with the buffer insulating layer 110 outside the semiconductor pattern 210. The interlayer insulating layer 240 may include an insulating material. For example, the interlayer insulating layer 240 may include silicon oxide.

The source electrode 250 and the drain electrode 260 may be located on the interlayer insulating layer 240. The source electrode 250 may be electrically connected to the source region of the semiconductor pattern 210. The drain electrode 260 may be electrically connected to the drain region of the semiconductor pattern 210. For example, the interlayer insulating layer 240 may include a first interlayer contact hole 241h exposing the source region of the semiconductor pattern 210 and an interlayer contact hole 242h exposing the drain region . The drain electrode 260 may be spaced apart from the source electrode 250.

The source electrode 250 and the drain electrode 260 may include a conductive material. The source electrode 250 and the drain electrode 260 may be formed of a metal such as Al, Cr, Cu, Ti, . ≪ / RTI > The drain electrode 260 may include the same material as the source electrode 250. The source electrode 250 may have a multi-layer structure. The structure of the drain electrode 260 may be the same as that of the source electrode 250. For example, the drain electrode 260 may have a multi-layer structure.

The data lines DL1-DL4, the reference voltage line Vref, and the power source voltage line PL may include the same material as the source electrode 250 and the drain electrode 260. The data lines DL1-DL4, the reference voltage line Vref, and the power source voltage line PL may be located on the same layer as the source electrode 250 and the drain electrode 260. For example, the data lines DL1 to DL4, the reference voltage line Vref, and the power source voltage line PL may be positioned on the interlayer insulating layer 240. [ The structure of the data line DL, the structure of the reference voltage line Vref and the structure of the power source voltage line PL may be the same as the structure of the source electrode 250 and the drain electrode 260 have. For example, the data line DL and the power supply voltage line PL may have a multi-layer structure.

The organic light emitting display according to the embodiment of the present invention is characterized in that the interlayer insulating layer 240 is located between the gate electrode 230 of each of the thin film transistors TR1, TR2 and TR3 and the source electrode 250 and the drain electrode 260 . However, in the OLED display according to another embodiment of the present invention, the thin film transistors TR1, TR2 and TR3 located in the respective light emitting regions EA are connected to the gate electrode 230, the source electrode 250, And a gate insulating layer 220 interposed between the gate insulating layer 260 and the gate insulating layer 220.

The storage capacitor Cst may be spaced apart from the thin film transistors TR1, TR2, and TR3. The storage capacitor Cst may be electrically connected to the thin film transistors TR1, TR2, and TR3. For example, the storage capacitor Cst may include a lower capacitor electrode 310, a capacitor insulating film 320, and an upper capacitor electrode 330 which are sequentially stacked.

The lower capacitor electrode 310 and the upper capacitor electrode 330 may include a conductive material. For example, the lower capacitor electrode 310 may include the same material as the gate electrode 230. The structure of the lower capacitor electrode 310 may be the same as that of the gate electrode 230. The upper capacitor electrode 330 may include the same material as the source electrode 250 and the drain electrode 260. The structure of the upper capacitor electrode 330 may be the same as the structure of the source electrode 250 and the drain electrode 260. For example, the upper capacitor electrode 330 may be connected to the drain electrode 260 of the driving TFT TR2. The upper capacitor electrode 330 may have a multi-layer structure.

The capacitor insulating layer 320 may include an insulating material. For example, the capacitor insulating layer 320 may include silicon oxide. The capacitor insulating layer 320 may include the same material as the interlayer insulating layer 240. For example, the capacitor insulating layer 320 may be connected to the interlayer insulating layer 240.

The organic light emitting diode display according to the embodiment of the present invention may further include a lower insulating layer 301 located between the lower substrate 100 and the storage capacitor Cst. The side surface of the lower insulating film 301 may be continuous with the side surface of the lower capacitor electrode 310. For example, the lower insulating layer 301 may include the same material as the gate insulating layer 220.

A dummy pattern WL may be positioned on the lower substrate 100. For example, the dummy pattern WL may extend parallel to the data lines DL1-DL4. The dummy pattern WL may extend between the light emitting region EA and the transmissive region TA. For example, the dummy pattern WL may include a region overlapping the transmissive region TA of the lower substrate 100.

The dummy pattern WL may include a conductive material. The dummy pattern WL may include the same material as one of the conductive layers of the thin film transistors TR1, TR2, and TR3. For example, the dummy pattern WL may include the same material as the source electrode 250 and the drain electrode 260. The dummy pattern WL may include the same material as the data lines DL1-DL4.

The OLED display according to the exemplary embodiment of the present invention may further include a lower protective layer 130 disposed on the dummy patterns WL and the thin film transistors TR1, TR2, and TR3, the storage capacitor Cst, and the like. The lower protective film 130 can prevent moisture and hydrogen from entering the thin film transistors TR1, TR2 and TR3. The thin film transistors TR1, TR2, and TR3, the storage capacitor Cst, and the dummy pattern WL may be covered with the lower protective layer 130. The lower protective layer 130 may include an insulating material. For example, the lower protective layer 130 may include silicon oxide and / or silicon nitride.

The auxiliary electrode 410 may be positioned on the lower protective layer 130. The auxiliary electrode 410 may be located within the light emitting region EA. For example, the auxiliary electrode 410 may be positioned on the thin film transistors TR1, TR2, and TR3. The auxiliary electrode 410 may include a conductive material. For example, the auxiliary electrode 410 may include a metal such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), tungsten (W) The auxiliary electrode 410 may have a multilayer structure. For example, the auxiliary electrode 410 may include a lower auxiliary electrode 411 and an upper auxiliary electrode 412 disposed on the lower auxiliary electrode 411.

The organic light emitting diode display according to an embodiment of the present invention may further include an auxiliary cladding layer 415 disposed on the auxiliary electrode 410. The auxiliary cladding layer 415 can prevent the auxiliary electrode 410 from being damaged by a subsequent process. For example, the auxiliary electrode 410 may be covered with the auxiliary cladding layer 415. The auxiliary cladding layer 415 may include a conductive material. The auxiliary cladding layer 415 may include a low-reactivity material. For example, the auxiliary cladding layer 415 may include a transparent conductive material such as ITO.

The organic light emitting display according to the exemplary embodiment of the present invention may further include a lower overcoat layer 140 positioned between the lower protective layer 130 and the auxiliary electrode 410. The lower overcoat layer 140 may remove a stepped portion by the thin film transistors TR1, TR2, and TR3 and the storage capacitor Cst. For example, the upper surface of the lower overcoat layer 140 facing the lower substrate 100 may be a flat surface. The upper surface of the lower overcoat layer 140 may be parallel to the surface of the lower substrate 100. The lower overcoat layer 140 may include an insulating material. For example, the lower overcoat layer 140 may comprise an organic insulating material.

The lower overcoat layer 140 may include a lower through hole 142h. The lower through-hole 142h may be located on the dummy pattern WL. For example, the dummy pattern WL positioned on the transmissive area TA of the lower substrate 100 may overlap with the lower through-hole 142h of the lower overcoat layer 140.

The repair electrode 430 may be positioned between the light emitting region EA of the lower substrate 100 and the transmissive region TA. For example, the repair electrode 430 may include a region overlapping the dummy pattern WL. The repair electrode 430 may be positioned on the lower overcoat layer 140. The repair electrode 430 may extend into the lower through-hole 142h. The repair electrode 430 may be in direct contact with the lower protective film 130 in the lower through hole 142h. For example, the dummy pattern WL and the repair electrode 430 may be insulated by the lower protective layer 130. The horizontal length of the partial area of the repair electrode 430 overlapping the dummy pattern WL may be smaller than the horizontal length of the upper surface of the dummy pattern WL toward the repair electrode 430.

The repair electrode 430 may include a conductive material. For example, the repair electrode 430 may include a metal such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), tungsten (W) The structure of the repair electrode 430 may be the same as that of the auxiliary electrode 410. For example, the repair electrode 430 may include a lower repair electrode 431 and an upper repair electrode 432 located on the lower repair electrode 431.

The OLED display according to the exemplary embodiment of the present invention may further include a repair clad layer 435 disposed on the repair electrode 430. The repair clad layer 435 may cover the repair electrode 430. The repair clad layer 435 may include a conductive material. The repair cladding layer 435 may include the same material as the auxiliary cladding layer 415. For example, the repair clad layer 435 may include a transparent conductive material such as ITO.

The light emitting structure 500 may implement a specific color. The light emitting structure 500 may be located in the light emitting area EA. For example, the light emitting structure 500 may be positioned on the auxiliary electrode 410. The light emitting structure 500 may include a lower light emitting electrode 510, a light emitting layer 520, and an upper light emitting electrode 530 sequentially stacked.

The organic light emitting display according to the exemplary embodiment of the present invention may further include an upper overcoat layer 150 disposed between the auxiliary electrode 410 and the light emitting structure 500. The upper overcoat layer 150 may remove a level difference caused by the auxiliary electrode 410. For example, the upper surface of the upper overcoat layer 150 toward the light emitting structure 500 may be a flat surface. The upper surface of the upper overcoat layer 150 may be parallel to the upper surface of the lower overcoat layer 140. The upper overcoat layer 150 may comprise an insulating material. For example, the upper overcoat layer 150 may comprise an organic insulating material. The upper overcoat layer 150 may include a material other than the lower overcoat layer 140.

The upper overcoat layer 150 may extend onto the transmissive area TA of the lower substrate 100. The upper overcoat layer 150 may include an upper through hole 154h that overlaps with a portion of the dummy pattern WL. The upper through hole 154h may overlap with the lower through hole 142h. The upper through hole 154h may expose a portion of the repair electrode 430 located in the lower through hole 142h. For example, the size of the upper through hole 154h may be smaller than that of the lower through hole 142h. The upper overcoat layer 150 may extend over the repair electrode 430 covering the side surface of the lower overcoat layer 140.

The light emitting structure 500 may be controlled by the corresponding thin film transistors TR1, TR2, and TR3. For example, the lower light emitting electrode 510 of the light emitting structure 500 may be electrically connected to the drain electrode 260 of the corresponding driving TFT TR2. For example, the lower protective layer 130, the lower overcoat layer 140, and the upper overcoat layer 150 may be formed on the upper capacitor electrode 142, which is connected to the drain electrode 260 of the corresponding driving TFT TR2, And electrode contact holes 131h, 141h, and 151h that expose a portion of the first electrode contact hole 330.

The organic light emitting display according to the exemplary embodiment of the present invention may further include a connection electrode 420 positioned between the lower overcoat layer 140 and the upper overcoat layer 150. The connection electrode 420 may electrically connect the lower light emitting electrode 510 of the light emitting structure 500 with the drain electrode 260 of the corresponding driving TFT TR2. For example, the lower luminous electrode 510 may be connected to the connection electrode 420 through the electrode contact hole 151h of the upper overcoat layer 150. The connection electrode 420 is electrically connected to the drain electrode of the driving TFT TR2 through the electrode contact hole 131h of the lower protective layer 130 and the electrode contact hole 141h of the lower overcoat layer 140 260 connected to the upper capacitor electrode 330. The connection electrode 420 may include a conductive material. For example, the connection electrode 420 may include a metal such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), tungsten (W) The connection electrode 420 may include the same material as the auxiliary electrode 410. The connection electrode 420 may have a multi-layer structure. For example, the structure of the connection electrode 420 may be the same as that of the auxiliary electrode 410. The connection electrode 420 may include a lower connection electrode 421 and an upper connection electrode 422 located on the lower connection electrode 421.

The organic light emitting diode display according to an exemplary embodiment of the present invention may further include a connection cladding layer 425 disposed between the connection electrode 420 and the upper overcoat layer 150. The connection clad layer 425 may cover the connection electrode 420. The connection clad layer 425 may include a conductive material. For example, the connection cladding layer 425 may include the same material as the auxiliary cladding layer 410. The connection clad layer 425 may include a transparent conductive material such as ITO.

The lower light emitting electrode 510 may include a conductive material. The lower light emitting electrode 510 may include a material having a high reflectivity. For example, the lower light emitting electrode 510 may include a metal such as aluminum (Al) and silver (Ag). The lower electrode 510 may have a multi-layer structure. For example, the lower luminous electrode 510 may include a transparent electrode including a transparent conductive material such as ITO, and a reflective electrode including a material having a high reflectance.

The lower light emitting electrode 510 may include a region located on the transmissive region TA of the lower substrate 100. For example, the lower luminous electrode 510 may be electrically connected to the repair electrode 430 on the transmissive area TA. The upper overcoat layer 150 may further include a repair contact hole 153h exposing a part of the repair electrode 430. [ The repair contact hole 153h may be spaced apart from the upper through hole 154h. The lower light emitting electrode 510 may overlap the repair contact hole 153h. The lower luminous electrode 510 may be connected to the repair electrode 430 through the repair contact hole 153h.

The organic light emitting layer 520 may generate light having a luminance corresponding to a voltage difference between the lower light emitting electrode 510 and the upper light emitting electrode 530. For example, the organic light emitting layer 520 may include an emission material layer (EML) including an organic light emitting material. The organic light emitting layer 520 may have a multi-layer structure for high luminous efficiency. For example, the organic emission layer 520 may include a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer EIL). ≪ / RTI >

The upper luminescent electrode 530 may include a conductive material. The upper light emitting electrode 530 may include a material different from the lower light emitting electrode 510. For example, the upper light emitting electrode 530 may be a transparent electrode. Accordingly, in the organic light emitting diode display according to the embodiment of the present invention, light generated by the organic light emitting layer 520 may be emitted through the upper light emitting electrode 530.

The organic light emitting diode display according to an exemplary embodiment of the present invention may further include a bank insulating layer 160 for insulating the adjacent light emitting structures 500. For example, the bank insulating layer 160 may cover the edge of the lower light emitting electrode 510 of each light emitting structure 500. The light emitting layer 520 and the upper light emitting electrode 530 may be stacked on the surface of the lower light emitting electrode 510 exposed by the bank insulating layer 160. The bank insulating layer 160 may include an insulating material. For example, the bank insulating layer 160 may include an organic insulating material such as benzocyclobutene (BCB), polyimide, or photo-acryl. The lower overcoat layer 140 and the upper overcoat layer 150 may include a material different from the bank insulating layer 160.

The bank insulating layer 160 may extend over the transmissive region TA of the lower substrate 100. The bank insulating layer 160 may include a bank through hole 160h which overlaps with the upper through hole 154h. Accordingly, in the OLED display according to the exemplary embodiment of the present invention, a part of the repair electrode 430 overlapping the dummy pattern WL may be exposed by the upper overcoat layer 150 and the bank insulating layer 160 . Therefore, in the organic light emitting display according to the embodiment of the present invention, the dummy pattern WL and the repair electrode 430 are welded by irradiating the laser through the upper through hole 154h and the bank through hole 160h, It is possible to perform the repair process without damaging them.

The organic light emitting layer 520 and the upper light emitting electrode 530 may extend on the bank insulating layer 160. The upper light emitting electrode 530 may be electrically connected to the auxiliary electrode 410. Accordingly, the organic light emitting display according to the embodiment of the present invention can prevent luminance nonuniformity due to the voltage drop of the upper light emitting electrode 530.

The organic light emitting display according to the exemplary embodiment of the present invention may further include a barrier 700 for providing a space through which the upper electrode 530 may be electrically connected to the auxiliary electrode 410. For example, a part of the light emitting layer 520 may be separated from other regions by the barrier 700. The upper luminescent electrode 530 may be electrically connected to the auxiliary electrode 410 through a space between the separated regions of the light emitting layer 520 by the barrier 700. The vertical length of the bank 700 may be greater than the vertical thickness of the bank insulating layer 160. For example, the barrier 700 may include a lower barrier 710 and an upper barrier 720 located on the lower barrier 710. The lower partition 710 and the upper partition 720 may include an insulating material. For example, the lower barrier rib 710 may include the same material as the bank insulating layer 160. The upper barrier rib 720 may include a material different from the lower barrier rib 610. For example, the top barrier 720 may comprise silicon oxide and / or silicon nitride.

The organic light emitting diode display according to an exemplary embodiment of the present invention may further include an intermediate electrode 550 positioned between the auxiliary electrode 410 and the bank insulating layer 160. The intermediate electrode 550 may be connected to the auxiliary electrode 410. For example, the upper overcoat layer 150 may include a through-hole 152h that exposes a portion of the auxiliary electrode 410. The barrier rib 700 may overlap the intermediate electrode 550. For example, the light emitting layer 520 may expose a portion of the intermediate electrode 550 by the barrier 700. The bank insulating layer 160 may cover the edge of the intermediate electrode 550. The bank 700 may be located between the bank insulating layers 160. The upper luminescent electrode 530 may be in contact with a part of the intermediate electrode 550 where the luminescent layer 520 is not formed by the barrier 700. The upper electrode 530 may be electrically connected to the auxiliary electrode 410 through the intermediate electrode 550. The intermediate electrode 550 may include a conductive material. For example, the intermediate electrode 550 may include the same material as the lower electrode 510. The intermediate electrode 550 may have a multi-layer structure. For example, the structure of the intermediate electrode 550 may be the same as the structure of the lower electrode 510.

The organic light emitting layer 520 and the upper light emitting electrode 530 may extend on the transmissive region TA of the lower substrate 100. The organic light emitting layer 520 and the upper light emitting electrode 530 may be connected to the repair electrode 430 overlapping the dummy pattern WL through the bank through hole 160h and the upper through hole 154h. ) Over a portion of the region.

The capping insulating layer 600 may be positioned on the repair electrode 430 in the upper through hole 154h. A part of the repair electrode 430 exposed by the bank through hole 160h and the upper through hole 154h may be covered with the capping insulating layer 600. [ The organic light emitting layer 520 and the upper light emitting electrode 530 may extend on the capping insulating layer 600. For example, the capping insulating layer 600 may directly contact the repair electrode 430 and the organic light emitting layer 520.

The capping insulating layer 600 may include an insulating material. Accordingly, in the OLED display according to the exemplary embodiment of the present invention, the repair electrode 430 may be insulated from the upper electrode 530 by the capping insulating layer 600 and the OLED 520. The capping insulating layer 600 may include a material other than the upper overcoat layer 150 and the bank insulating layer 160. For example, the capping insulating layer 600 may include an inorganic insulating material. The capping insulating layer 600 may include silicon oxide, silicon nitride, and / or silicon oxynitride. The capping insulating layer 600 may have a multi-layer structure. Accordingly, the organic light emitting display repair electrode 430 according to the embodiment of the present invention can be prevented from short-circuiting with the upper light emitting electrode 530.

The capping insulating layer 600 may extend along a side surface of the upper overcoat layer 150 overlapping the dummy pattern WL. For example, the capping insulating layer 600 may extend between the upper overcoat layer 150 and the bank insulating layer 160. The capping insulating layer 600 may be in the form of a liner. For example, the thickness of the capping insulating layer 600 on the repair electrode 430 may be equal to the thickness of the capping insulating layer 600 on the side of the upper overcoat layer 150.

The capping insulating layer 600 may be located only on the transmissive region TA of the lower substrate 100. For example, the capping insulating layer 600 may not extend over the light emitting region EA of the lower substrate 100. Accordingly, the efficiency of the light emitting structure 500 may not be lowered by the capping insulating layer 600 in the OLED display according to the exemplary embodiment of the present invention.

The organic light emitting display according to an embodiment of the present invention may further include an upper substrate 800 facing the lower substrate 100. The upper substrate 800 may overlap the emission region EA and the transmissive region TA of the lower substrate 100. For example, the upper substrate 800 may be positioned on the light emitting structure 500 and the repair electrode 430. The upper substrate 800 may include an insulating material. The upper substrate 800 may include a transparent material. For example, the upper substrate 800 may comprise glass or plastic.

In the organic light emitting diode display according to the exemplary embodiment of the present invention, the light emitting structure 500 of each sub-light emitting region may implement the same color. For example, the light emitting structure 500 of each sub-luminescent region may include a white luminescent layer 520. The organic light emitting diode display according to the exemplary embodiment of the present invention may further include a black matrix 810 and a color filter 820 disposed on the upper substrate 800. Accordingly, the organic light emitting display according to the exemplary embodiment of the present invention may display different colors of the respective sub-luminescent regions in which the light emitting structure 500 having the same color is located.

The organic light emitting display according to an embodiment of the present invention may further include a filler 900 filling the space between the lower substrate 100 and the upper substrate 800. The filler 900 can prevent damage to the light emitting structure 500 due to an external impact. For example, the filler 900 may extend between the light emitting structure 500 and the black matrix 810 and the color filter 820.

The organic light emitting display according to the embodiment of the present invention is described in which the light emitting structure 500 directly contacts the filler 900. However, the organic light emitting display according to another embodiment of the present invention may further include a top protective layer disposed between the light emitting structure 500 and the filler 900. The upper protective film may prevent external moisture or the like from penetrating into the light emitting structure 500. The upper protective film may include a multilayer structure. For example, the upper protective film may have a structure in which an inorganic film including an inorganic material and an organic film including an organic material are stacked.

As a result, the organic light emitting display according to the embodiment of the present invention includes the upper through-hole 154h and the bank through-hole 160h in which the upper overcoat layer 150 and the bank insulating layer 160 overlap the repair electrode 430, The capping insulating film 600 is positioned on the repair electrode 430 exposed by the upper through hole 154h and the repair electrode 430 is insulated from the upper light emitting electrode 530, It is possible to maintain the insulation between the upper electrode 430 and the upper electrode 530 and prevent the laser irradiated for the repair process from being absorbed and refracted by the insulating films. Therefore, in the organic light emitting diode display according to the embodiment of the present invention, the damage of the adjacent insulating films by the laser used in the repair process is prevented, and the process time required for the repair process can be shortened without physical damage.

The organic light emitting display according to the embodiment of the present invention is described as the capping insulating layer 600 extending between the upper overcoat layer 150 and the bank insulating layer 160. However, in the OLED display according to another embodiment of the present invention, the capping insulating layer 600 may extend to various positions. For example, in an organic light emitting display according to another embodiment of the present invention, a capping insulating layer 600 may extend between the repair electrode 430 and the upper overcoat layer 150, as shown in FIG. In this case, the capping insulating layer 600 of the OLED display according to another embodiment of the present invention may include a capping contact hole 600h for connecting the repair electrode 430 and the lower electrode 510. Alternatively, the organic light emitting diode display according to another embodiment of the present invention may include a capping insulating layer 600 extending between the bank insulating layer 160 and the light emitting layer 520, as shown in FIG. Accordingly, in the organic light emitting display according to another embodiment of the present invention, the formation order of the capping insulating layer 600 can be adjusted according to convenience of the process. Therefore, in the organic light emitting display according to another embodiment of the present invention, the reliability of the repair process can be efficiently improved and the process time can be effectively shortened.

The organic light emitting diode display according to the embodiment of the present invention is described in which the capping insulating layer 600 includes an inorganic insulating material. However, the organic light emitting display according to another embodiment of the present invention may include a capping insulating layer 600 of an organic insulating material. For example, as shown in FIG. 5, the organic light emitting diode display according to another embodiment of the present invention may include a capping insulating layer 160p including the same material as the bank insulating layer 160. In the OLED display according to another embodiment of the present invention, the capping insulating layer 160p may be formed simultaneously with the bank insulating layer 160. For example, a method of forming an OLED display according to another embodiment of the present invention includes forming an insulating layer for a bank insulating layer 160 on a lower electrode 510, A bank insulating layer 160 partially exposing the lower light emitting electrode 510 and a second insulating layer 160 partially exposing the lower light emitting electrode 510, And simultaneously forming a capping insulating film 160p covering a part of the repair electrode 430 exposed by the upper through hole 154h. The capping insulating layer 160p may extend along a side surface of the upper overcoat layer 150 and may be connected to the bank insulating layer 160. Accordingly, the organic light emitting diode display according to another embodiment of the present invention can perform the repair process without physical damage, shorten the process time, and improve the reliability of the repair process.

100: lower substrate 130: lower protective film
140: lower overcoat layer 150: upper overcoat layer
320: repair electrode 435: repair clad layer
500: light emitting structure 510: lower light emitting electrode
600: capping insulating film

Claims (15)

A dummy pattern located on the lower substrate;
A lower protective layer located on the lower substrate and covering the dummy pattern;
A repair electrode located on the lower protective film and including a region overlapping with the dummy pattern;
An upper overcoat layer located on the repair electrode and including an upper through hole overlapping the dummy pattern;
A bank insulating layer disposed on the upper overcoat layer and including a bank through hole overlapping the upper through hole; And
And a capping insulating layer located on the repair electrode in the upper through hole. The method according to claim 1,
Wherein the capping insulating layer is in direct contact with the repair electrode. The method according to claim 1,
Wherein the capping insulating layer extends on a side of the upper overcoat layer overlapping the dummy pattern. The method of claim 3,
Wherein a thickness of the capping insulating layer on the repair electrode is equal to a thickness of the capping insulating layer on the side surface of the upper overcoat layer. The method of claim 3,
Wherein the capping insulating layer comprises the same material as the bank insulating layer. The method according to claim 1,
And a thin film transistor located between the lower substrate and the lower protective film and spaced apart from the dummy pattern,
Wherein the dummy pattern comprises the same material as one of the conductive layers of the thin film transistor. The method according to claim 1,
And a lower overcoat layer disposed between the lower substrate and the repair electrode and including a lower through hole overlapping the upper through hole,
Wherein the repair electrode extends inside the lower through hole along the side surface of the lower overcoat layer. 8. The method of claim 7,
Wherein the size of the upper through hole is smaller than the size of the lower through hole. A lower substrate including a light emitting region and a transmissive region;
A repair electrode positioned on the transmissive region of the lower substrate;
A lower protective film located between the lower substrate and the repair electrode;
An upper overcoat layer located on the repair electrode and including an upper through hole exposing a part of the repair electrode;
A bank insulating layer disposed on the upper overcoat layer and including a bank through hole overlapping the upper through hole;
A dummy pattern located between the lower substrate and the lower protective film and overlapping the upper through hole; And
And a capping insulating layer covering the repair electrode exposed by the upper through hole. 10. The method of claim 9,
Wherein a horizontal length of the partial area of the repair electrode is smaller than a horizontal length of an upper surface of the dummy pattern toward the repair electrode. 10. The method of claim 9,
Wherein the capping insulating layer extends between the repair electrode and the upper overcoat layer. 12. The method of claim 11,
And the capping insulating layer covers the repair electrode. 10. The method of claim 9,
And a light emitting structure disposed on the light emitting region of the lower substrate and including a lower light emitting electrode, an organic light emitting layer, and an upper light emitting electrode stacked in order,
Wherein the organic light emitting layer and the upper light emitting electrode extend inward of the upper through hole through the bank through hole. 14. The method of claim 13,
Wherein the capping insulating layer is in direct contact with the organic light emitting layer. 14. The method of claim 13,
Wherein the upper overcoat layer further comprises a contact hole spaced apart from the upper through hole and overlapping the repair electrode,
And the lower luminous electrode is connected to the repair electrode through the contact hole.

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