KR20150002422A - Organic light emitting display device and manufacturing method of the same - Google Patents

Abstract

An embodiment of the present invention relates to an organic light emitting display device capable of improving reliability. An organic light emitting display device for defining pixel regions which includes a light emitting region and a non-light emitting region in a display region, includes a sub electrode which is formed in part of the non-light emitting region of at least one pixel region; a first electrode formed in the light emitting region of each pixel region; an organic layer which is formed in the front side of the display region and covers the first electrode and the sub electrode; a second electrode formed in the front side of the organic layer; and a contact welding which is formed by allowing at least part of the sub electrode to penetrate the organic layer to diffuse to the second electrode, and connects the sub electrode and the second electrode.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting diode (OLED) display device,

The present invention relates to an organic light emitting display device capable of improving reliability and a method of manufacturing the same.

As the era of informationization becomes full-scale, the display field for visually displaying electrical information signals is rapidly developing. Accordingly, studies have been continuing to develop performance such as thinning, lightening, and low power consumption for various flat display devices.

Typical examples of such flat panel display devices include a liquid crystal display device (LCD), a plasma display panel (PDP), a field emission display (FED) An electroluminescence display device (ELD), an electro-wetting display device (EWD), and an organic light emitting display device (OLED).

Such flat panel display devices commonly include flat panel display panels for realizing images. Here, the flat panel display panel has a structure in which a pair of substrates sandwiching an intrinsic light emitting material or a polarizing material is in a face-to-face relationship, and includes a display area in which a display area and a non- The display region is defined as a plurality of pixel regions.

Among them, the organic light emitting display OLED displays an image by using an organic light emitting element which is a self light emitting type element. That is, the organic light emitting display includes a plurality of organic light emitting elements corresponding to a plurality of pixel regions.

The organic light emitting device is formed of organic materials between first and second electrodes facing each other and between the first and second electrodes and generates an electroluminescence based on a driving current between the first and second electrodes Lt; / RTI >

One of the first and second electrodes (hereinafter referred to as "first electrode") is formed to correspond to each pixel region, and the other one (hereinafter, As shown in FIG.

As described above, unlike the first electrode formed to correspond to each pixel region, the second electrode is formed to correspond to the entire plurality of pixel regions, and thus has a higher resistance than the first electrode. In particular, in the case where the organic light emitting display device emits light in a path through which the second electrode passes, in order to increase light emission efficiency, i.e., brightness, of each pixel region, the second electrode is formed of a transparent conductive material And thus can have a higher resistance.

However, as the resistance of the second electrode is higher, a voltage drop (IR drop) of a larger width is generated, so that the brightness of each pixel region can be changed according to the distance from the power source. That is, due to the high resistance of the second electrode, there is a problem that the uniformity of the luminance of each pixel region is lowered. Further, in spite of the voltage drop due to the high resistance of the second electrode, the power consumption of the organic light emitting display device is increased in order to secure a luminance of more than a critical value.

Particularly, the larger the area of the organic light emitting display device, the lower the luminance uniformity and the higher the power consumption due to the high resistance of the second electrode, and thus, there is a problem that the size of the organic light emitting display device is limited.

In order to solve this problem, it is necessary to lower the resistance of the second electrode. To this end, the general organic light emitting display may further include a separate auxiliary electrode formed of a material having a resistance lower than that of the second electrode.

At this time, since the auxiliary electrode is formed to face the second electrode with the organic layer therebetween, at least a part of the auxiliary electrode must be exposed without forming the organic layer in order to be connected to the second electrode.

For example, in order to expose at least a part of the auxiliary electrode, the organic layer may be selectively etched. In this case, not only the organic layer is entirely damaged but also the etched organic material may remain as an impurity, There is a problem that the reliability of the apparatus is lowered.

As another example, it is possible to form an organic layer in a state where at least a part of the auxiliary electrode is masked using a fine mask. In this case, since only a fine mask needs to be used throughout the organic layer forming process, high cost is consumed, .

The present invention can connect the auxiliary electrode and the second electrode to each other without the use of a fine mask when the organic layer is selectively etched or when an organic layer is formed. Thus, the manufacturing process can be facilitated and reliability can be improved. Apparatus and a method of manufacturing the same.

According to an aspect of the present invention, there is provided an OLED display device including a plurality of pixel regions each including a light emitting region and a non-light emitting region in a display region, An auxiliary electrode formed on the substrate; A first electrode formed in the light emitting region of each pixel region; An organic layer formed on a front surface of the display region and covering the first electrode and the auxiliary electrode; A second electrode formed on a front surface of the organic layer; And at least a part of the auxiliary electrode is formed by diffusing into the second electrode through the organic layer and connecting the auxiliary electrode and the second electrode.

A method of manufacturing an organic light emitting display in which a plurality of pixel regions each including a light emitting region and a non-light emitting region are defined in a display region, the method comprising: forming a gate line on a substrate; Forming a data line on the gate insulating layer, and forming an auxiliary electrode including a first auxiliary electrode layer in a part of the non-emission region; Forming an overcoat layer covering the data line and the first auxiliary electrode layer on the entire surface of the gate insulating layer; Forming an auxiliary contact hole through at least the overcoat layer to expose at least a part of the first auxiliary electrode layer; Forming a first electrode in the light emitting region on the overcoat layer; Forming a bank on the overcoat layer at least partially overlapping the rim of the first electrode; Forming an organic layer covering the first electrode, the bank, and the auxiliary electrode on the entire surface of the overcoat layer; Forming a second electrode on the entire surface of the organic layer; Forming a sealing layer opposite to the second electrode; And diffusing at least a portion of the auxiliary electrode to the second electrode to form a contact weld connecting the auxiliary electrode and the second electrode.

Since the organic light emitting display according to an embodiment of the present invention includes the auxiliary electrode connected to the second electrode formed on the front surface, the resistance of the second electrode can be lowered, It is possible to prevent an increase in electric power, and thus it can be more advantageous in large-area.

Further, by further including the contact welding in which at least a part of the auxiliary electrode is formed by diffusing into the second electrode through the organic layer, the organic layer can be selectively etched or the auxiliary electrode can be selectively etched, Respectively. Therefore, since the organic layer is prevented from being damaged due to the connection between the auxiliary electrode and the second electrode, the reliability and lifetime of the organic light emitting display can be further improved, and a high cost and high attention And the manufacturing process can be further simplified.

In addition, since the contact welding includes a process margin smaller than a general contact hole, the aperture ratio of the organic light emitting display device can be improved.

In addition, the method of manufacturing an organic light emitting diode display according to an embodiment of the present invention is advantageous in that since a contact layer is formed after a sealing layer is formed, a vacuum chamber is not required in forming a contact well, Can be reduced.

1 is an equivalent circuit diagram illustrating an organic light emitting display according to an embodiment of the present invention.
FIGS. 2A and 2B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the first embodiment of the present invention and cross-sectional views showing any one pixel region.
FIGS. 3A and 3B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the second embodiment of the present invention, and cross-sectional views showing any one of the pixel regions.
FIGS. 4A and 4B are a plan view showing a part of the OLED display device of FIG. 1 according to the third embodiment of the present invention, and cross-sectional views showing any one of the pixel regions.
FIGS. 5A and 5B are a plan view showing a part of the OLED display of FIG. 1 according to the fourth embodiment of the present invention, and cross-sectional views showing any one of the pixel regions.
FIGS. 6A and 6B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the fifth embodiment of the present invention, and cross-sectional views showing any one of the pixel regions.
FIGS. 7A and 7B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the sixth embodiment of the present invention, and cross-sectional views showing any one of the pixel regions.
8A and 8B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the seventh embodiment of the present invention, and cross-sectional views showing any one of the pixel regions.
9A and 9B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to an eighth embodiment of the present invention, and sectional views showing any one of the pixel regions.
10 is a flowchart illustrating a method of manufacturing an OLED display according to an embodiment of the present invention.
11A to 11I are process drawings showing respective steps of Fig.

Hereinafter, an organic light emitting diode display and a method of manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

First, as shown in Figs. 1, 2A, 2B, 3A, 3B, 4A, 4B, 5A, 5B, 6A, 6B, 7A, 7B, 8A, 8B, Referring to FIG. 9B, an organic light emitting diode display according to an embodiment of the present invention will be described.

1 is an equivalent circuit diagram illustrating an organic light emitting display according to an embodiment of the present invention. FIGS. 2A and 2B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the first embodiment of the present invention and cross-sectional views showing any one pixel region. FIGS. 3A and 3B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the second embodiment of the present invention, and cross-sectional views showing any one of the pixel regions. FIGS. 4A and 4B are a plan view showing a part of the OLED display device of FIG. 1 according to the third embodiment of the present invention, and cross-sectional views showing any one of the pixel regions. FIGS. 5A and 5B are a plan view showing a part of the OLED display of FIG. 1 according to the fourth embodiment of the present invention, and cross-sectional views showing any one of the pixel regions. FIGS. 6A and 6B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the fifth embodiment of the present invention, and cross-sectional views showing any one of the pixel regions. FIGS. 7A and 7B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the sixth embodiment of the present invention, and cross-sectional views showing any one of the pixel regions. 8A and 8B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to the seventh embodiment of the present invention, and cross-sectional views showing any one of the pixel regions. 9A and 9B are a plan view showing a part of the organic light emitting diode display of FIG. 1 according to an eighth embodiment of the present invention, and sectional views showing any one of the pixel regions.

1, an OLED display 100 according to an exemplary embodiment of the present invention includes a gate line GL and a data line DL, which are formed so as to cross each other to define a plurality of pixel regions PA, A plurality of thin film transistors TFT corresponding to the plurality of pixel regions PA and a plurality of organic light emitting elements ED formed in the light emitting regions of the plurality of pixel regions PA.

The plurality of organic light emitting devices ED are connected to one of the thin film transistors TFT and to the reference power source Vdd. Thus, each organic light emitting element ED emits light based on the driving current corresponding to the potential difference between each thin film transistor TFT and the reference power supply Vdd.

As shown in Figs. 2A, 3A, 4A, 5A, 6A, 7A, 8A and 9A, according to each embodiment, each of the plurality of pixel regions PA emits light for display And a non-emission region NEA other than the emission region EA.

The organic light emitting display devices 100a to 100h according to the embodiments include a thin film transistor (TFT) formed in each pixel region PA on the substrate 111, a gate line formed on the substrate 111 A gate insulating film 112 formed on the entire surface of the substrate 111 and covering the gate lines GL; gate lines GL formed on the gate insulating film 112 and defining a plurality of pixel regions PA; (DL in FIG. 1), an auxiliary electrode 120 formed in a part of the non-emission region NEA, and a thin film transistor TFT and a gate electrode GL formed on the entire surface of the gate insulating film 112 And an overcoat layer 113 covering the data line DL and the auxiliary electrode 120.

The organic light emitting display devices 100a to 100h according to the respective embodiments are formed in the light emitting region EA on the overcoat layer 113 and include a first electrode 131 connected to the thin film transistor TFT, A bank 132 formed on the periphery of the first electrode 131 and at least partially overlapping the rim of the first electrode 131 is formed on the entire surface of the overcoat layer 113 so as to cover the first electrode 131, The second electrode 134 formed on the entire surface of the organic layer 133 and a portion of the auxiliary electrode 120 are diffused into the second electrode 134 through the organic layer 133. [ A contact weld 140 formed to connect the auxiliary electrode 120 and the second electrode 134 and a sealing layer 150 opposed to the second electrode 134. [

The thin film transistor TFT corresponding to each pixel region PA includes a gate electrode 161, an active layer 162, a source electrode 163, and a drain electrode 164.

The gate electrode 161 is formed on the substrate 111 like the gate line GL. The gate line GL is branched from the gate line GL and connected to the gate line GL.

The active layer 162 is formed on the gate insulating film 112 so as to overlap with at least a part of the gate electrode 161. Here, the active layer 162 may be formed of any one of oxide semiconductor, polysilicon, and amorphous silicon (a-Si: amorphous silicon).

The source electrode 163 and the drain electrode 164 are formed to be spaced apart from each other on the gate insulating film 112 like the data line DL. The source electrode 163 and the drain electrode 164 overlap each other on both sides of the active layer 162.

Here, any one of the source electrode 163 and the drain electrode 164 (for example, the source electrode 163) may be branched from the data line DL and may be connected to the data line DL do. The other one of the source electrode 163 and the drain electrode 164 that is not connected to the data line DL may be a drain electrode 164, Is at least partially exposed through the hole CT1, and is connected to the first electrode 131.

When the active layer 162 is formed of an oxide semiconductor, the thin film transistor TFT may further include an etch stopper layer 165 formed on the active layer 162, And the drain electrode 164 overlap on both sides of the etch stopper 165.

The first electrode 131 corresponds to at least an emission area (EA: Emitting Area) of each pixel area PA and is formed on the overcoat layer 113. The first electrode 131 is connected to the data line DL among the source electrode 163 and the drain electrode 164 of the thin film transistor TFT through the main contact hole CT1 passing through the overcoat layer 113 And is connected to the other unconnected (for example, the drain electrode 164).

The bank 132 corresponds to the outside of the light emitting region EA of each pixel region PA and is formed on the overcoat layer 112. [ The bank 132 overlaps at least a part of the edge of the first electrode 131. [

It is possible to prevent the organic layer 133 from deteriorating more quickly due to current flow concentrated on the step of the first electrode 131 because the stepped region of the first electrode 131 is covered by the bank 132. [

The organic layer 133 is formed on the entire surface of the display area, that is, on the entire surface of the overcoat layer 113, corresponding to the entire plurality of pixel areas PA. Thus, the organic layer 133 is formed to cover the first electrode 131 and the bank 132.

The organic layer 133 may be formed using an open mask corresponding to the display region.

Although not shown in detail, the organic layer 133 may have a multi-layer structure composed of organic materials having different components or compositions. For example, the organic layer 133 may include a light emitting layer made of an organic light emitting material, and may further include at least one of an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer.

The second electrode 134 is formed on the entire surface of the organic layer 133.

The organic light emitting device ED including the first and second electrodes 131 and 134 and the organic layer 133 interposed therebetween are formed in the light emitting region EA of each pixel region PA, .

The sealing layer 150 is formed opposite the second electrode 134. The sealing layer 150 isolates a plurality of organic light emitting devices ED from the outside and shields the organic light emitting devices ED from penetrating moisture or oxygen into the plurality of organic light emitting devices ED, (ED).

2A and 2B, according to the first embodiment of the present invention, the auxiliary electrode 120 is formed on the same layer as any one of the signal line of the gate line GL and the data line DL, And a single auxiliary electrode layer 121 isolated from one signal line.

That is, the auxiliary electrode layer 121 is formed on the gate insulating film 112 together with the data line DL, the source electrode 163, and the drain electrode 164, and the data line DL, the source electrode 163, And may be an island pattern (ISLAND PATTERN) isolated from each of the electrodes 164. The auxiliary electrode layer 121 may be in the form of a line parallel to the data line DL.

An auxiliary electrode layer (not shown) is formed on the substrate 111 together with the gate line GL and the gate electrode 161 and is formed from the gate line GL and the gate electrode 161 It can be an isolated island pattern. In this case, the auxiliary electrode layer (not shown) may be in the form of a line parallel to the gate line GL. The auxiliary contact hole CT2 for exposing a part of the auxiliary electrode 120 is formed not only by the overcoat layer 113 but also through the gate insulating film 112.

A portion of the auxiliary electrode 120 exposed by the auxiliary contact hole CT2 faces the second electrode 134 with the organic layer 133 interposed therebetween.

Then, the contact welding 140 is formed in the region where a part of the auxiliary electrode layer 121 is exposed by the auxiliary contact hole CT2.

Specifically, the contact welding 140 diffuses a part of the auxiliary electrode 120 to the second electrode 134 using a laser located outside the back surface of the substrate 111. That is, a part of the auxiliary electrode 120 is irradiated with the laser beam emitted from the laser equipment located outside the back surface of the substrate 111 and transmitted through the substrate 111. As a result, a part of the auxiliary electrode 120 is melted and penetrates through the organic layer 133 and diffuses into the second electrode 134, thereby forming the contact welding 140.

As described above, according to the first embodiment of the present invention, the auxiliary electrode 120 and the second electrode 134, which are opposed to each other at least partially via the organic layer 133 through the auxiliary contact hole CT2, 140, respectively. The resistance of the second electrode 134 can be lowered while the damage of the organic layer 133 can be prevented and the connection of the auxiliary electrode 120 and the second electrode 134 can be performed in a simpler and simpler process .

A part of the organic layer 133 may be selectively removed to expose the auxiliary electrode 120 or may be exposed to the auxiliary electrode 120 during the formation of the organic layer 133. In order to connect the auxiliary electrode 120 and the second electrode 134, It is not necessary to use a fine mask covering a part of the electrode 120. [

As a result, damage to the organic layer 133 and generation of impurities can be prevented in advance, so that the reliability and lifetime of the organic light emitting display 100a can be improved.

When the organic layer 133 is formed using an open mask instead of a fine mask, the process can be simplified, and an increase in the process cost, a high level of attention for mask alignment, and an increase in the process time can be prevented .

In addition, since the process margin of the contact well 140 is smaller than that of a general contact hole, the aperture ratio of the OLED display 100a can be improved.

In addition, when the contact welding 140 is formed, a laser located outside the back surface of the substrate 111 can be used to sufficiently form the sealing layer 150 outside the vacuum chamber. Therefore, since a large vacuum chamber capable of mounting a laser or the like is unnecessary, the manufacturing cost can be reduced.

According to the first embodiment, the auxiliary electrode 120 is formed on the same layer as the signal line of either the gate line GL or the data line DL, that is, on the substrate 111, And a single auxiliary electrode layer 121 formed on one of the first and second electrodes 112 and 112.

However, unlike the first embodiment, the auxiliary electrode 120 may include an auxiliary electrode layer formed on a layer other than the same layer as the signal line of either the gate line GL or the data line DL.

3A, the auxiliary electrode 120 according to the second embodiment includes a single auxiliary electrode layer 122 formed on the same layer as the first electrode 131 and isolated from the first electrode 131 ).

3B, the auxiliary electrode layer 122 according to the second embodiment may be a mesh-shaped pattern (MESH PATTERN) spaced apart from the first electrode 131 by a predetermined distance.

As described above, in the second embodiment, the organic light emitting diode display 100b is configured such that the auxiliary electrode 120 is composed of a single auxiliary electrode layer 122 formed on the overcoat layer 113, 2B. Therefore, the description of the second embodiment will be omitted.

According to the first and second embodiments, the auxiliary electrode 120 includes a single auxiliary electrode layer. Alternatively, the auxiliary electrode 120 may include two electrode layers formed on different layers.

4A, the auxiliary electrode 120 according to the third embodiment has the same layer as the signal line of either the gate line GL or the data line DL (the data line DL in FIG. And a second auxiliary electrode layer 122 formed on the same layer as the first electrode 131. The first auxiliary electrode layer 121 and the second auxiliary electrode layer 122 are formed on the same layer.

That is, the auxiliary electrode 120 includes a first auxiliary electrode layer 121 formed on one of the substrate 111 and the gate insulating layer 112, a second auxiliary electrode layer 122 formed on the overcoat layer 113, .

The second auxiliary electrode layer 122 is in contact with the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2 and is connected to the first auxiliary electrode layer 121.

In this case, the contact welding 140 may be formed by diffusing the mutually overlapping portions of the first and second auxiliary electrode layers 121 and 122 in the auxiliary contact hole CT2.

The contact well 140 may be formed at intervals corresponding to the two or more pixel regions PA.

The organic light emitting diode display 100c according to the third embodiment is similar to the organic light emitting display 100 according to the first embodiment except that the auxiliary electrode 120 includes the first and second auxiliary electrode layers 121 and 122, Are the same as those of the first and second embodiments shown in FIG. 3B, and therefore a duplicate description will be omitted.

Meanwhile, according to the third embodiment, the second auxiliary electrode layer 122 is formed to contact all of the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2, but the present invention is not limited thereto.

That is, as shown in Figs. 5A and 5B, according to the fourth embodiment, a part of the first auxiliary electrode layer 121 is exposed through the auxiliary contact hole CT2. The second auxiliary electrode layer 122 'is formed so as to be partially in contact with a part of the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2 as a whole. A portion of the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2 is in contact with the organic layer 133 that does not contact the first auxiliary electrode layer 122 '.

In addition, according to the fourth embodiment, the contact welding 140 is performed in the region where the first auxiliary electrode layer 121 is partially exposed by the auxiliary contact hole CT2, so that the first and second auxiliary electrode layers 121 and 122 'And the second electrode 134 may overlap each other.

As described above, the organic light emitting diode display 100d according to the fourth embodiment of the present invention is such that the first and second auxiliary electrode layers 121 and 122 are in contact with each other not in the auxiliary contact hole CT2 as a whole, 4A and 4B, except that the contact welding 140 is formed at a portion where the first and second auxiliary electrode layers 121 and 122 'and the second electrode 134 overlap each other. The same explanation will be omitted.

6A and 6B, according to the fifth embodiment, the contact well 140 is formed in a region where a part of the first auxiliary electrode layer 121 is exposed by the auxiliary contact hole CT2, Any one of the first and second auxiliary electrode layers 121 and 122 'and the second electrode 134 may be formed at portions where they overlap each other.

That is, since the second auxiliary electrode layer 122 'is formed to partially contact the part of the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2, the first auxiliary electrode layer 122' A portion of the auxiliary electrode layer 121 that does not contact the second auxiliary electrode layer 122 'contacts the organic layer 133. The contact welding 140 may be formed in the auxiliary contact hole CT2 in a region where the first auxiliary electrode layer 121 and the second electrode 134 face each other with the organic layer 133 interposed therebetween.

As described above, the organic light emitting diode display 100e according to the fifth embodiment of the present invention is characterized in that any one of the first and second auxiliary electrode layers 121 and 122 'and the second electrode 134 are formed at mutually overlapping portions 5A and 5B, the description of the fourth embodiment will be omitted.

On the other hand, unlike the third, fourth, and fifth embodiments, the auxiliary electrode 120 may include three electrode layers formed on different layers.

7A and 7B, according to the sixth embodiment, the auxiliary electrode 120 is formed in the same manner as the first auxiliary electrode layer 121a and the data line DL formed in the same layer as the gate line GL And a second auxiliary electrode layer 122 formed in the same layer as the first electrode 131 in a mesh pattern.

The first and third auxiliary electrode layers 121a and 121b may be connected to each other through a free contact hole CT3 extending through the gate insulating layer 112. [

The contact welding 140 may be formed in a portion where the first, second and third auxiliary electrode layers 121a and 121b 122 and the second electrode 134 overlap with each other in the auxiliary contact hole CT2 .

As described above, if the auxiliary electrode 120 is formed as a multilayer, the resistance of the second electrode 134 can be further reduced.

4A and 4B, except that the auxiliary electrode 120 is formed of first, second, and third electrode layers formed on different layers, the organic light emitting diode display 100f according to the sixth embodiment has the same structure, Is the same as that of the third embodiment shown in FIG.

On the other hand, unlike the first to sixth embodiments, the contact Welding 140 may be formed in an area not corresponding to the auxiliary contact hole CT2.

8A and 8B, according to the seventh embodiment, the contact welding 140 has the second auxiliary electrode layer 122 and the second electrode 134 around the auxiliary contact hole CT2 They may be formed at mutually overlapping portions.

In this case, since the region where the contact welding 140 is to be formed is not limited to within the auxiliary contact hole CT2, the process error can be reduced.

The organic light emitting diode display 100g according to the seventh embodiment is formed such that the contact welding 140 is formed at a portion where the second auxiliary electrode layer 122 and the second electrode 134 overlap each other in the periphery of the auxiliary contact hole CT2 7A and 7B, except for the fact that the second embodiment is the same as the sixth embodiment shown in FIGS. 7A and 7B.

Unlike the seventh embodiment, the free contact holes CT3 for interconnecting the first and third auxiliary electrode layers 121a and 121b may be omitted.

9A and 9B, the organic light emitting diode display 100h according to the eighth embodiment includes the first auxiliary electrode layer 121a and the third auxiliary electrode layer 121b, And second auxiliary contact holes CT2 ', CT2. At this time, the first and third auxiliary electrode layers 121a and 121b and the second auxiliary electrode layer 122 are connected to each other via the first and second auxiliary contact holes CT2 'and CT2.

The contact welding 140 may be formed at a portion where the second auxiliary electrode layer 122 and the second electrode 134 overlap each other around the auxiliary contact hole CT2.

In this case, the mask process for forming the free contact hole (CT3 in FIG. 8A) can be omitted, and manufacturing cost and manufacturing time can be reduced.

The OLED display 100h according to the eighth embodiment does not include a free contact hole CT3 for connecting the first and third auxiliary electrode layers 121a and 121b to each other, Except that the first and second auxiliary contact holes CT1 'and CT2 include first and second auxiliary contact holes CT2' and CT2 for interconnecting the electrode layers 121a and 121b and the second auxiliary electrode layer 122, respectively, Hereinafter, a duplicate description will be omitted.

Next, a method of manufacturing an organic light emitting display according to an embodiment of the present invention will be described with reference to FIGS. 10 and 11A to 11I. FIG. Hereinafter, a method of manufacturing an OLED display will be described with reference to the organic light emitting display 100c according to the third embodiment shown in FIGS. 4 and 5 as an example.

As shown in FIG. 10, a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention includes forming a gate line on a substrate, forming a gate insulating film on the entire surface of the substrate, forming a data line on the gate insulating film (S110) forming an auxiliary electrode including a first auxiliary electrode layer in a part of the non-emission region, forming an overcoat layer covering the data line and the first auxiliary electrode layer on the entire surface of the gate insulating layer (S120) Forming an auxiliary contact hole through the over-contact layer to expose at least a part of the first auxiliary electrode layer (S130); forming a first electrode in a light emitting region on the overcoat layer; Forming an auxiliary electrode layer (S140) on the overcoat layer; forming a bank at least partially overlapping a periphery of the first electrode at a periphery of the light emitting region on the overcoat layer (S150) (S160) forming an organic layer covering the first electrode, the bank and the auxiliary electrode on the entire surface of the layer, forming a second electrode on the entire surface of the organic layer (S170), forming a sealing layer opposed to the second electrode (S180), and diffusing at least a portion of the auxiliary electrode to the second electrode to form a contact weld connecting the auxiliary electrode and the second electrode (S190).

11A, a plurality of thin film transistors (TFT), a gate line (GL in Fig. 1), a data line (DL in Fig. 1), a first auxiliary electrode layer 121, And a gate insulating film 112 for insulating the gate line GL and the data line DL from each other. (S110) Here, the first auxiliary electrode layer 121 is formed on the same layer as any one of the gate line GL and the data line DL.

Specifically, the conductive layer on the substrate 111 is patterned to form a gate electrode 161 which is branched from the gate line GL and the gate line GL. Here, when the first auxiliary electrode layer (not shown) is the same layer as the gate line GL, a first auxiliary electrode layer (not shown) is also formed.

Next, a gate insulating film 112 covering the gate line GL and the gate electrode 161 is formed on the entire surface of the substrate 111.

An active layer 162 which overlaps with at least a part of the gate electrode 161 is formed on the gate insulating film 112.

The etch stopper layer 165 may be formed on the active layer 162 when the active layer 162 is an oxide semiconductor that can easily lose its semiconducting properties upon exposure to the etching process.

The conductive layer on the gate insulating film 112 is patterned to form a source line 163 and a drain electrode 164 overlapping on both sides of the data line DL crossing the gate line GL and the active layer 162 do. Here, when the first auxiliary electrode layer 121 is the same layer as the data line DL, the first auxiliary electrode layer 121 is also formed.

As a result, a thin film transistor (TFT) including the gate electrode 161, the active layer 162, the source electrode 163, and the drain electrode 164 is formed.

The overcoat layer 113 covering the thin film transistor (TFT) and the first auxiliary electrode layer 121 is formed on the entire surface of the gate insulating film 112 as shown in Fig. 11B. (S120)

The overcoat layer 113 is patterned to form the main contact hole CT1 and the auxiliary contact hole CT2 as shown in Fig. (S130)

The main contact hole CT1 penetrates the overcoat layer 113 and exposes any one of the source electrode 163 and the drain electrode 164 which is not connected to the data line DL.

The auxiliary contact hole CT2 exposes at least a part of the first auxiliary electrode layer 121 through at least the overcoat layer 113. [ Here, when the first auxiliary electrode layer 121 is formed on the same layer as the gate line GL, that is, on the substrate 111, the auxiliary contact hole CT2 is further formed through the gate insulating layer 112. [

The first electrode 131 is formed by patterning the conductive layer on the overcoat layer 113 as shown in Fig. (S140)

The first electrode 131 is formed in the light emitting region EA of each pixel region PA and is connected to the thin film transistor TFT through the main contact hole CT1.

In the case where the auxiliary electrode 120 further includes a second auxiliary electrode layer 122 formed on the same layer as the first electrode 131, An electrode layer 122 is further formed.

The second auxiliary electrode layer 122 is formed in the non-emission area NEA and overlaps at least a part of the first auxiliary electrode layer 121 through the auxiliary contact hole CT2.

Thereby, the auxiliary electrode 120 including the first and second auxiliary electrode layers 121 and 122 connected to each other through the auxiliary contact hole CT2 is formed.

A bank 132 overlapping on the rim of the first electrode 131 is formed outside the luminescent region EA on the overcoat layer 113 as shown in Fig. (S150). Here, the bank 132 may overlap the edge of the second auxiliary electrode layer 122 more.

The organic layer 133 is formed on the entire surface of the overcoat layer 113, as shown in Fig. (S160)

At this time, the organic layer 133 covers the first electrode 131, the bank 132, and the auxiliary electrode 120, respectively.

In addition, the step of forming the organic layer 133 (S160) is carried out in the vacuum chamber.

The second electrode 134 is formed on the entire surface of the organic layer 133, as shown in Fig. 11G. (S170)

The sealing layer 150 opposed to the second electrode 134 is formed as shown in FIG. (S180)

After the sealing layer 150 is formed in this way, the product is transferred out of the vacuum chamber.

Then, as shown in FIG. 11I, a laser LASER, which is emitted on the back surface of the substrate 111 and transmitted through the substrate 111, is irradiated to the auxiliary electrode 120, and the auxiliary electrode 120 is irradiated onto the second electrode 134 ) To form the contact weld 140. As shown in FIG. (S190)

At this time, the auxiliary electrode 120 and the second electrode 134 are interconnected by the contact welding 140.

As described above, in the method of manufacturing an organic light emitting display according to an embodiment of the present invention, after the sealing layer 150 is formed (S180), the gap between the auxiliary electrode 120 and the second electrode 134 To form a connecting contact weld 140. (S190) By this, damage to the organic layer 133 can be prevented, and the process can be further facilitated.

10 and 11A to 11I illustrate a method of manufacturing the OLED display 100c according to the third embodiment of the present invention, but the present invention is not limited thereto.

Specifically, the method of manufacturing the organic light emitting display 100a according to the first embodiment of the present invention is similar to that of the first embodiment except that the auxiliary electrode layer is not formed in the step of forming the first electrode (S140) Is the same as the third embodiment shown in Fig.

The manufacturing method of the OLED display 100b according to the second embodiment of the present invention is similar to that of the OLED display of FIG. 10 and FIG. 10 except that the auxiliary electrode layer is not formed in step S110 of forming the gate line, 11A to 11I.

In the method of manufacturing the organic light emitting display 100d according to the fourth embodiment of the present invention, in the step of forming the first electrode (S140), the second auxiliary electrode layer 122 'is exposed through the auxiliary contact hole CT2 1 assisted electrode layer 121 in the auxiliary contact hole CT1 and the contact weld 140 is formed in the auxiliary contact hole CT2 in the step of forming the contact weld 140 in step S190. Are the same as the third embodiment shown in FIGS. 10 and 11A to 11I except that the first electrodes 121 and 122 'and the second electrode 134 are formed in areas where they overlap each other.

The manufacturing method of the OLED display 100e according to the fifth embodiment of the present invention is such that the contact welding 140 is performed in the auxiliary contact hole CT2 in the step of forming the contact welding 140 Except that only the first electrode 122 'and the second electrode 134 are formed in the mutually overlapping areas.

In the method of manufacturing the organic light emitting diode display 100f according to the sixth embodiment of the present invention, first and third auxiliary electrode layers 121a and 121b are formed in step S110 of forming a gate line, a gate insulating layer, and a data line And a pre-contact hole CT3 that exposes a part of the first auxiliary electrode layer 121a after the gate insulating film is formed is the same as the third embodiment shown in FIGS. 10 and 11A to 11I Do.

The manufacturing method of the OLED display 100g according to the seventh embodiment of the present invention is such that the contact welding 140 is performed in the vicinity of the auxiliary contact hole CT2 in the step of forming the contact welding 140 Except that the electrode layer 122 and the second electrode 134 are formed in areas where they overlap with each other.

In the method of manufacturing the organic light emitting diode display 100h according to the eighth embodiment of the present invention, in step S130 of forming the auxiliary contact holes, a part of each of the first and third auxiliary electrode layers 121a and 121b is exposed Except that the first and second auxiliary contact holes CT2 'and CT2 are formed in the same manner as in the seventh embodiment.

Therefore, redundant description will be omitted.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of.

100, 100a to 100h: organic light emitting display
GL: gate line DL: data line
TFT: thin film transistor ED: organic light emitting element
PA: pixel area EA: light emitting area
NEA: non-emission area
111: substrate 112: gate insulating film
113: overcoat layer 120: auxiliary electrode
121, 121a: first auxiliary electrode layer
121b: third auxiliary electrode layer
122, 122 ': a second auxiliary electrode
CT1: main contact hole CT2: auxiliary contact hole
131: first electrode 132: bank
133: organic layer 134: second electrode
140: contact welding 150: sealing layer

Claims (16)

In an organic light emitting display in which a plurality of pixel regions each including a light emitting region and a non-light emitting region are defined in a display region,
An auxiliary electrode formed in a part of the non-emission region of the at least one pixel region;
A first electrode formed in the light emitting region of each pixel region;
An organic layer formed on a front surface of the display region and covering the first electrode and the auxiliary electrode;
A second electrode formed on a front surface of the organic layer; And
Wherein at least a portion of the auxiliary electrode is formed by diffusing into the second electrode through the organic layer and connecting the auxiliary electrode and the second electrode. The method according to claim 1,
Board;
A gate line formed on the substrate;
A gate insulating film formed on the front surface of the substrate and covering the gate line; And
Further comprising a data line formed on the gate insulating film and intersecting the gate line so that a plurality of pixel regions are defined,
The auxiliary electrode
And a first auxiliary electrode layer formed in an island pattern so as to be isolated from the one signal line in the same layer as any one of the gate line and the data line. 3. The method of claim 2,
An overcoat layer formed on the entire surface of the display region and covering the gate line, the data line, and the first auxiliary electrode layer; And
Further comprising an auxiliary contact hole passing through at least the overcoat layer,
Wherein the first electrode is formed on the overcoat layer. The method of claim 3,
The auxiliary electrode
And a second auxiliary electrode layer formed on the same layer as the first electrode so as to be insulated from the first electrode and in contact with at least a portion of the first auxiliary electrode layer through the auxiliary contact hole. 5. The method of claim 4,
Wherein the contact welding is formed in a region where the first and second auxiliary electrode layers and the second electrode overlap with each other within a region where a part of the first auxiliary electrode layer is exposed by the auxiliary contact hole. 5. The method of claim 4,
The contact welding may be performed in a region where a part of the first auxiliary electrode layer is exposed by the auxiliary contact hole, the second auxiliary electrode layer excluding the first auxiliary electrode layer and the second electrode among the first and second auxiliary electrode layers, Wherein the organic light emitting display is formed in a region where mutually overlapping. 5. The method of claim 4,
The first auxiliary electrode layer is formed in the same layer as the gate line and in a line pattern parallel to the gate line,
The auxiliary electrode
And a third auxiliary electrode layer formed on the same layer as the data line and connected to the first auxiliary electrode layer through a free contact hole passing through the gate insulating layer,
And the second auxiliary electrode layer is in contact with at least a part of the third auxiliary electrode layer through the auxiliary contact hole. 8. The method of claim 7,
The contact welding may be performed in a region where a portion of the third auxiliary electrode layer is exposed by the auxiliary contact hole, and the organic electroluminescent layer is formed in a region where the first, second and third auxiliary electrode layers and the second electrode overlap each other. Display device. 8. The method of claim 7,
Wherein the contact welding is formed in a region where the second auxiliary electrode layer and the second electrode overlap each other around the auxiliary contact hole. 5. The method of claim 4,
The first auxiliary electrode layer is formed in the same layer as the gate line and in a line pattern parallel to the gate line,
The auxiliary electrode
And a third auxiliary electrode layer formed in the same layer as the data line and in a line pattern parallel to the data line,
Wherein the second auxiliary electrode layer contacts at least a portion of the first auxiliary electrode layer through the first auxiliary contact hole passing through the gate insulating layer and the overcoat layer and through the second auxiliary contact hole passing through the overcoat layer, 3 auxiliary electrode layer,
Wherein the contact welding is formed in a region where the second auxiliary electrode layer and the second electrode overlap each other around the auxiliary contact hole. The method according to claim 1,
Wherein the auxiliary electrode includes a first auxiliary electrode layer formed on the same layer as the first electrode and formed to be insulated from the first electrode. A method for manufacturing an organic light emitting display in which a plurality of pixel regions each including a light emitting region and a non-light emitting region are defined in a display region,
Forming a gate line on the substrate, forming a gate insulating film on the entire surface of the substrate, forming a data line on the gate insulating film, and forming an auxiliary electrode including a first auxiliary electrode layer in a part of the non-emitting region;
Forming an overcoat layer covering the data line and the first auxiliary electrode layer on the entire surface of the gate insulating layer;
Forming an auxiliary contact hole through at least the overcoat layer to expose at least a part of the first auxiliary electrode layer;
Forming a first electrode in the light emitting region on the overcoat layer;
Forming a bank on the overcoat layer at least partially overlapping the rim of the first electrode;
Forming an organic layer covering the first electrode, the bank, and the auxiliary electrode on the entire surface of the overcoat layer;
Forming a second electrode on the entire surface of the organic layer;
Forming a sealing layer opposite to the second electrode; And
And diffusing at least a portion of the auxiliary electrode to the second electrode to form a contact weld connecting the auxiliary electrode and the second electrode. 13. The method of claim 12,
In the step of forming the gate line, the data line, the gate insulating film, and the first auxiliary electrode layer,
Wherein the first auxiliary electrode is formed in an island pattern so as to be isolated from the one signal line on the same layer as any one of the gate line and the data line. 14. The method of claim 13,
Forming a second auxiliary electrode layer on the overcoat layer, the auxiliary electrode layer being insulated from the first electrode and overlapping at least a part of the first auxiliary electrode layer through the auxiliary contact hole, A method of manufacturing a light emitting display device. 15. The method of claim 14,
Wherein the contact welding is performed in a region where a part of the first auxiliary electrode layer is exposed by the auxiliary contact hole. 13. The method of claim 12,
Wherein the step of forming the contact welding comprises irradiating the auxiliary electrode with a laser transmitted through the substrate to form the contact welding.

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