KR102113616B1 - Organic light emitting display device and manufacturing method of the same - Google Patents

Abstract

An exemplary embodiment of the present application relates to an organic light emitting display device capable of improving reliability, wherein an organic light emitting display device in which a plurality of pixel areas each including a light emitting area and a non-light emitting area are defined in a display area is a gate insulating film on a substrate. A crossing gate line and a data line; A thin film transistor disposed in the pixel area on the substrate; An overcoat layer covering the thin film transistor on the substrate; An auxiliary electrode disposed on a non-emission region on the substrate; A first electrode disposed in the light emitting region on the overcoat layer; An organic layer disposed on the first electrode and the auxiliary electrode; A second electrode disposed on the organic layer; And a contact welding penetrating through the organic layer to connect between the auxiliary electrode and the second electrode; The auxiliary electrode includes a first auxiliary electrode layer disposed under the overcoat layer, and a second auxiliary electrode layer disposed on the overcoat layer and connected to the first auxiliary electrode layer through an auxiliary contact hole passing through the overcoat layer, and the second auxiliary electrode. The electrode layer has a matrix structure overlapping the gate line and the data line, and is wider than the gate line and wider than the data line.

Description

Organic light emitting display device and its manufacturing method {ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME}

The present invention relates to an organic light emitting display device capable of improving reliability and a method for manufacturing the same.

With the advent of the full-fledged information age, the display field for visually displaying electrical information signals is rapidly developing. Accordingly, research is being conducted to develop performance of thinning, lightening, and low power consumption for various flat display devices.

Typical examples of such a flat panel display device are a liquid crystal display device (LCD), a plasma display panel device (PDP), a field emission display device (FED), and an electroluminescent display device. (Electro Luminescence Display device: ELD), Electro-Wetting Display device (EWD), and Organic Light Emitting Display device (OLED).

These flat panel display devices commonly include a flat panel display panel for realizing an image. Here, the flat panel display panel is a structure in which a pair of substrates having a unique luminescent material or a polarizing material interposed therebetween, and includes a display surface in which a display area and a non-display area outside thereof are defined. Further, the display area is defined as a plurality of pixel areas.

Among them, an organic light emitting display device (OLED) displays an image using an organic light emitting device, which is a self-emission type device. That is, the organic light emitting display device includes a plurality of organic light emitting elements corresponding to a plurality of pixel areas.

The organic light emitting device is formed of organic materials between the first and second electrodes that face each other, and the first and second electrodes, and generates electroluminescence based on driving current between the first and second electrodes. It contains an organic layer.

One of the first and second electrodes (hereinafter referred to as "first electrode") is formed to correspond to each pixel region, and the other (hereinafter, referred to as "second electrode") is a plurality of pixel regions It is formed to correspond in common.

As described above, unlike the first electrode formed to correspond to each pixel region, the second electrode has a higher resistance than the first electrode as it is formed to correspond to the entire plurality of pixel regions. In particular, when the organic light emitting display device emits light through a path through the second electrode, in order to increase light emission efficiency of each pixel region, that is, brightness, the second electrode is formed of a transparent conductive material as thin as possible. Can be, and thereby, can have a higher resistance.

However, the higher the resistance of the second electrode, the larger the voltage drop (IR drop) occurs, so the luminance of each pixel area may vary depending on the distance from the power source. That is, due to the high resistance of the second electrode, there is a problem in that the uniformity of the luminance of each pixel region is lowered. In addition, despite the voltage drop due to the high resistance of the second electrode, there is a problem in that the power consumption of the organic light emitting display device increases in order to secure luminance above a threshold.

Particularly, as the organic light emitting display device has a larger area, a decrease in luminance uniformity due to a high resistance of the second electrode and an increase in power consumption become more severe, and thus there is a problem that there is a limit to the large area of the organic light emitting display device.

In order to solve this problem, it is necessary to lower the resistance of the second electrode. To this end, the general organic light emitting display device may further include a separate auxiliary electrode formed of a material having a lower resistance than the second electrode.

At this time, as the auxiliary electrode is formed to face the second electrode with the organic layer interposed therebetween, in order to be connected to the second electrode, at least a portion of the auxiliary electrode must be exposed without forming the organic layer.

For example, in order to expose at least a portion of the auxiliary electrode, the organic layer may be selectively etched. In this way, not only the organic layer may be damaged overall, but the etched organic material may remain as an impurity, indicating organic emission. There is a problem that the reliability of the device is lowered.

As another example, by using a micromask, an organic layer may be formed in a state where at least a part of the auxiliary electrode is covered. In this case, since only the micromask must be used throughout the organic layer formation process, high cost is consumed and high caution is used during the process. There is a problem that requires.

The present application can be connected between the auxiliary electrode and the second electrode without selectively etching the organic layer or using a micromask when forming the organic layer, so that the manufacturing process can be more easily performed and the organic light emitting display can be improved in reliability. It is to provide an apparatus and a manufacturing method.

In order to solve this problem, the present application is a substrate; A gate line and a data line intersecting the gate insulating film on the substrate; A thin film transistor disposed in the pixel area on the substrate; An overcoat layer covering the thin film transistor on the substrate; An auxiliary electrode disposed on a non-emission region on the substrate; A first electrode disposed in the light emitting region on the overcoat layer; An organic layer disposed on the first electrode and the auxiliary electrode; A second electrode disposed on the organic layer; And a contact welding penetrating through the organic layer to connect between the auxiliary electrode and the second electrode; The auxiliary electrode includes a first auxiliary electrode layer disposed under the overcoat layer, and a second auxiliary electrode layer disposed on the overcoat layer and connected to the first auxiliary electrode layer through an auxiliary contact hole passing through the overcoat layer, and the second auxiliary electrode. The electrode layer provides an organic light emitting display device having a matrix structure overlapping with the gate line and the data line, and having a wider width than the gate line and a wider width than the data line.

Herein, a gate line is formed on a long plate, a gate insulating film is formed on a front surface of a substrate, a data line is formed on a gate insulating film, a thin film transistor is formed in a pixel region, and a first auxiliary electrode layer is formed in a non-emission region. To do; Forming an overcoat layer covering the data line, the thin film transistor, and the first auxiliary electrode layer on the gate insulating film; Forming a main contact hole and an auxiliary contact hole penetrating at least the overcoat layer; Forming a first electrode connected to the thin film transistor through the main contact hole in the light-emitting region on the overcoat layer, and forming a second auxiliary electrode layer connected to the first auxiliary electrode layer through the auxiliary contact hole in the non-light-emitting region on the overcoat layer ; Forming a bank on the overcoat layer, overlapping the edge of the first electrode and overlapping a portion of the second auxiliary electrode layer; Forming an organic layer on the overcoat layer to cover the first electrode, the bank, and the second auxiliary electrode layer; Forming a second electrode on the organic layer; Forming a sealing layer facing the second electrode; And irradiating a laser to at least a portion of the auxiliary electrode including the first auxiliary electrode layer and the second auxiliary electrode layer to form a contact welding through the organic layer to connect between the auxiliary electrode and the second electrode; The second auxiliary electrode layer provides a method of manufacturing an organic light emitting display device having a matrix structure overlapping with a gate line and a data line, and having a wider width than the gate line and a wider width than the data line.

The organic light emitting display device according to the exemplary embodiment of the present application includes an auxiliary electrode connected to a second electrode formed on the front surface, so that the resistance of the second electrode can be lowered, resulting in lower luminance and consumption due to high resistance of the second electrode. Since the increase in power can be prevented, it can be more advantageous for large area.

In addition, by further including contact welding formed by diffusion of at least a portion of the auxiliary electrode through the organic layer to the second electrode, even if the organic layer is selectively etched or a micromask is not used when forming the organic layer, the auxiliary electrode and the second electrode You can connect them. Therefore, in order to connect the auxiliary electrode and the second electrode, as the organic layer is prevented from being damaged, the reliability and life of the organic light emitting display device can be further improved, and high cost and high attention are consumed when forming the organic layer. Since it can be prevented, the manufacturing process can be further simplified.

In addition, since contact welding includes a process margin smaller than that of a general contact hole, the aperture ratio of the organic light emitting display device may be improved.

In addition, the method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present application forms a sealing layer and then forms a contact welding, so that a vacuum chamber is not required at the time of forming the contact welding, so the process becomes easier and the manufacturing cost This can be reduced.

1 is an equivalent circuit diagram showing an organic light emitting display device according to an exemplary embodiment of the present application.
2A and 2B are plan views illustrating a part of the organic light emitting display device of FIG. 1 according to a first embodiment of the present application, and a cross-sectional view showing one pixel area.
3A and 3B are plan views illustrating a part of the organic light emitting display device of FIG. 1 according to a second embodiment of the present application, and a cross-sectional view showing one pixel area.
4A and 4B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a third embodiment of the present application, and a cross-sectional view showing one pixel area.
5A and 5B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a fourth embodiment of the present application, and a cross-sectional view showing one pixel area.
6A and 6B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a fifth embodiment of the present application, and a cross-sectional view showing one pixel area.
7A and 7B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a sixth embodiment of the present application, and a cross-sectional view showing one pixel area.
8A and 8B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a seventh embodiment of the present application, and a cross-sectional view showing one pixel area.
9A and 9B are plan views showing a part of the organic light emitting display device of FIG. 1 according to an eighth embodiment of the present application, and a cross-sectional view showing one pixel area.
10 is a flowchart illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present application.
11A to 11I are process diagrams showing each step of FIG. 10.

Hereinafter, an organic light emitting display device and a manufacturing method according to an embodiment of the present application will be described in detail with reference to the accompanying drawings.

First, FIGS. 1, 2A, 2B, 3A, 3B, 4A, 4B, 5A, 5B, 6A, 6B, 7A, 7B, 8A, 8B, 9A, and An organic light emitting display device according to an exemplary embodiment of the present application will be described with reference to FIG. 9B.

1 is an equivalent circuit diagram showing an organic light emitting display device according to an exemplary embodiment of the present application. 2A and 2B are plan views illustrating a part of the organic light emitting display device of FIG. 1 according to a first embodiment of the present application, and a cross-sectional view showing one pixel area. 3A and 3B are plan views illustrating a part of the organic light emitting display device of FIG. 1 according to a second embodiment of the present application, and a cross-sectional view showing one pixel area. 4A and 4B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a third embodiment of the present application, and a cross-sectional view showing one pixel area. 5A and 5B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a fourth embodiment of the present application, and a cross-sectional view showing one pixel area. 6A and 6B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a fifth embodiment of the present application, and a cross-sectional view showing one pixel area. 7A and 7B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a sixth embodiment of the present application, and a cross-sectional view showing one pixel area. 8A and 8B are plan views showing a part of the organic light emitting display device of FIG. 1 according to a seventh embodiment of the present application, and a cross-sectional view showing one pixel area. 9A and 9B are plan views showing a part of the organic light emitting display device of FIG. 1 according to an eighth embodiment of the present application, and a cross-sectional view showing one pixel area.

As illustrated in FIG. 1, the organic light emitting display device 100 according to an exemplary embodiment of the present application includes gate lines GL and data lines DL formed to cross each other so that a plurality of pixel areas PA are defined, It includes a plurality of thin film transistors (TFT) corresponding to the plurality of pixel areas (PA), and a plurality of organic light emitting device (ED) formed in each light emitting area of the plurality of pixel areas (PA).

The plurality of organic light emitting devices ED is connected to any one thin film transistor TFT and is connected to a reference power source Vdd. Accordingly, each organic light emitting element ED emits light based on a driving current corresponding to a potential difference between each thin film transistor TFT and the reference power source Vdd.

2A, 3A, 4A, 5A, 6A, 7A, 8A, and 9A, according to each embodiment, each of the plurality of pixel areas PA emits light for display. And a non-emission region NEA.

In addition, the organic light emitting display devices 100a to 100h according to each embodiment include a thin film transistor (TFT) formed in each pixel area PA on the substrate 111 and a gate line formed on the substrate 111 (FIG. 1) GL), the gate insulating layer 112 formed on the front surface of the substrate 111 and covering the gate line GL, and the gate line GL formed on the gate insulating layer 112 and defining a plurality of pixel areas PA. The data line (DL in FIG. 1), the auxiliary electrode 120 formed on a part of the non-emission area NEA, and the gate insulating layer 112 formed on the front surface of the thin film transistor TFT and the gate electrode GL ) And an overcoat layer 113 covering the data line DL and the auxiliary electrode 120.

In addition, the organic light emitting display devices 100a to 100h according to each embodiment are formed in the light emitting region EA on the overcoat layer 113, and are connected to the first electrode 131 and the overcoat layer (TFT). 113) is formed on the outer portion of the light emitting region EA and overlaps at least partly on the edge of the first electrode 131, the bank 132 is formed on the entire surface of the overcoat layer 113, and the first electrode 131 and bank The organic layer 133 covering the 132, the second electrode 134 formed on the front surface on the organic layer 133, and a portion of the auxiliary electrode 120 penetrate the organic layer 133 to diffuse to the second electrode 134 It is formed, and further includes a contact welding 140 connecting the auxiliary electrode 120 and the second electrode 134, and a sealing layer 150 facing the second electrode 134.

The thin film transistor TFT corresponding to each pixel area PA includes a gate electrode 161, an active layer 162, a source electrode 163 and a drain electrode 164.

The gate electrode 161 is formed on the substrate 111, like the gate line GL. Then, it is formed in a branched form from the gate line GL, and is connected to the gate line GL.

The active layer 162 is formed on the gate insulating layer 112 to overlap at least a portion of the gate electrode 161. Here, the active layer 162 may be formed of any one of oxide semiconductor, poly silicon (crystalline silicon), and amorphous silicon (a-Si: amorphous silicon).

The source electrode 163 and the drain electrode 164 are formed to be spaced apart from each other on the gate insulating layer 112, like the data line DL. Then, the source electrode 163 and the drain electrode 164 overlap on both sides of the active layer 162.

Here, one of the source electrode 163 and the drain electrode 164 (for example, may be the source electrode 163) is formed in a branched form from the data line DL, and is connected to the data line DL do. In addition, the other of the source electrode 163 and the drain electrode 164 that is not connected to the data line DL (for example, may be the drain electrode 164) is a main contact passing through the overcoat layer 113. At least partially exposed through the hole CT1, the first electrode 131 is connected.

In addition, when the active layer 162 is formed of an oxide semiconductor, the thin film transistor (TFT) may further include an etch stopper layer 165 formed on the active layer 162, wherein the source electrode 163 And the drain electrode 164 overlaps on both sides of the etch stopper 165.

The first electrode 131 corresponds to at least an emission area (EA) of each pixel area PA, and is formed on the overcoat layer 113. In addition, the first electrode 131 is connected to the data line DL of the source electrode 163 and the drain electrode 164 of the thin film transistor TFT through the main contact hole CT1 passing through the overcoat layer 113. It is connected to another one that is not connected (for example, the drain electrode 164).

The bank 132 corresponds to the outside of the emission area EA of each pixel area PA, and is formed on the overcoat layer 112. In addition, the bank 132 overlaps at least a part of the edge of the first electrode 131.

The step region of the first electrode 131 is covered by the bank 132, so that the organic layer 133 may be prevented from deteriorating more rapidly due to a current flow concentrated in the step of the first electrode 131.

The organic layer 133 is formed on the entire surface of the display area, that is, on the overcoat layer 113 corresponding to the entire plurality of pixel areas PA. Accordingly, the organic layer 133 is formed to cover the first electrode 131 and the bank 132.

The organic layer 133 may be formed using an open mask corresponding to the display area.

Although not shown in detail, the organic layer 133 may be formed of a multi-layer structure made of organic materials having different components or compositions. For example, the organic layer 133 may include a light emitting layer made of an organic light emitting material, and may further include at least one of an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer.

The second electrode 134 is formed on the front surface of the organic layer 133.

Accordingly, the organic light emitting device ED including the first and second electrodes 131 and 134 facing each other in the light emitting area EA of each pixel area PA, and the organic layer 133 interposed therebetween. Is formed.

The sealing layer 150 is formed to face the second electrode 134. The sealing layer 150 isolates the plurality of organic light emitting elements ED from the outside and shields moisture or oxygen from penetrating the plurality of organic light emitting elements ED, thereby allowing the plurality of organic light emitting elements by moisture or oxygen. Delay deterioration of (ED).

2A and 2B, according to the first embodiment of the present application, the auxiliary electrode 120 is formed on the same layer as one of the signal lines of the gate line GL and the data line DL, It consists of a single auxiliary electrode layer 121 insulated from one signal line.

That is, the auxiliary electrode layer 121 is formed on the gate insulating layer 112 together with the data line DL, the source electrode 163 and the drain electrode 164, and the data line DL, the source electrode 163 and the drain It may be an island pattern (ISLAND PATTERN) insulated from each of the electrodes 164. The auxiliary electrode layer 121 may be in the form of a line parallel to the data line DL.

Alternatively, although not separately illustrated, the auxiliary electrode layer (not shown) is formed on the substrate 111 together with the gate line GL and the gate electrode 161, and is formed from each of the gate line GL and the gate electrode 161. It may be an isolated island pattern. In this case, the auxiliary electrode layer (not shown) may have a line shape parallel to the gate line GL. In addition, the auxiliary contact hole CT2 for exposing a portion of the auxiliary electrode 120 is formed through the gate insulating layer 112 as well as the overcoat layer 113.

A portion of the auxiliary electrode 120 exposed by the auxiliary contact hole CT2 faces the second electrode 134 with the organic layer 133 therebetween.

In addition, the contact welding 140 is formed in an area where a portion of the auxiliary electrode layer 121 is exposed by the auxiliary contact hole CT2.

Specifically, the contact welding 140 diffuses a portion of the auxiliary electrode 120 to the second electrode 134 using a laser located outside the rear surface of the substrate 111. That is, a part of the auxiliary electrode 120 is irradiated with the laser emitted from the laser equipment located outside the rear surface of the substrate 111 and transmitted through the substrate 111. Therefore, a part of the auxiliary electrode 120 is melted, penetrates the organic layer 133, and diffuses into the second electrode 134, thereby forming the contact welding 140.

As described above, according to the first embodiment of the present application, the auxiliary electrode 120 and the second electrode 134 facing at least a part of the organic layer 133 through the auxiliary contact hole CT2 between the contact welding ( 140). Accordingly, while the resistance of the second electrode 134 may be lowered, damage to the organic layer 133 may be prevented, and the connection between the auxiliary electrode 120 and the second electrode 134 may be performed in a simpler and simpler process. Can be.

In other words, in order to connect between the auxiliary electrode 120 and the second electrode 134, a portion of the organic layer 133 is selectively removed to expose the auxiliary electrode 120 or when the organic layer 133 is formed. It is not necessary to use a micromask that covers a part of the electrode 120.

Accordingly, damage to the organic layer 133 and generation of impurities can be prevented in advance, so that the reliability and life of the organic light emitting display device 100a can be improved.

And, when the organic layer 133 is formed, an open mask rather than a micromask is used, so that the process can be simplified, an increase in process cost, a high level of attention for mask alignment, an increase in process time, and the like can be prevented. Can be.

In addition, since the contact welding 140 has a smaller process margin than a general contact hole, the aperture ratio of the organic light emitting display device 100a may be improved.

In addition, when the contact welding 140 is formed, a laser positioned outside the rear surface of the substrate 111 is used, and thus it is sufficiently possible outside the vacuum chamber after the sealing layer 150 is formed. Therefore, since a large vacuum chamber that is large enough to mount a laser or the like is unnecessary, manufacturing cost can be reduced.

Meanwhile, according to the first embodiment, the auxiliary electrode 120 is formed on the same layer as one of the signal lines of the gate line GL and the data line DL, that is, on the substrate 111, or the gate insulating film ( 112) comprises a single auxiliary electrode layer 121 formed on any one of.

However, unlike the first embodiment, the auxiliary electrode 120 may include an auxiliary electrode layer formed on a layer other than the same layer as one of the signal lines of the gate line GL and the data line DL.

For example, as illustrated in FIG. 3A, the auxiliary electrode 120 according to the second embodiment is formed on the same layer as the first electrode 131 and is a single auxiliary electrode layer 122 insulated from the first electrode 131. ).

In addition, as illustrated in FIG. 3B, the auxiliary electrode layer 122 according to the second embodiment may be a mesh pattern (MESH PATTERN) spaced apart from the first electrode 131 by a predetermined distance.

As described above, the organic light emitting display device 100b in the second embodiment is shown in FIGS. 2A and 2 except that the auxiliary electrode 120 is formed of a single auxiliary electrode layer 122 formed on the overcoat layer 113. Since it is the same as the first embodiment shown in 2b, a duplicate description will be omitted below.

Meanwhile, according to the first and second embodiments, the auxiliary electrode 120 is formed of a single auxiliary electrode layer. Alternatively, the auxiliary electrode 120 may include two electrode layers formed on different layers.

As shown in FIG. 4A, the auxiliary electrode 120 according to the third embodiment is the same layer as any one of the signal lines of the gate line GL and the data line DL (the data line DL in FIG. 4A). It includes a first auxiliary electrode layer 121 formed on the same layer), and a second auxiliary electrode layer 122 formed on the same layer as the first electrode 131.

That is, the auxiliary electrode 120 includes a first auxiliary electrode layer 121 formed on any one of the substrate 111 and the gate insulating layer 112 and a second auxiliary electrode layer 122 formed on the overcoat layer 113. It includes.

Here, the second auxiliary electrode layer 122 is in contact with the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2 and is connected to the first auxiliary electrode layer 121.

In this case, the contact welding 140 may be formed by diffusing the overlapping portions of the first and second auxiliary electrode layers 121 and 122 in the auxiliary contact hole CT2.

Also, the contact welding 140 may be formed at intervals corresponding to two or more pixel areas PA.

The organic light emitting display device 100c according to the third embodiment is illustrated in FIGS. 2A, 2B, 3A, and 2 except that the auxiliary electrode 120 includes first and second auxiliary electrode layers 121 and 122. Since it is the same as the first and second embodiments illustrated in FIG. 3B, a duplicate description will be omitted below.

On the other hand, according to the third embodiment, the second auxiliary electrode layer 122 is formed to contact all of the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2, but the present application is not limited thereto.

That is, as shown in FIGS. 5A and 5B, according to the fourth embodiment, a part of the first auxiliary electrode layer 121 is exposed through the auxiliary contact hole CT2. In addition, the second auxiliary electrode layer 122 ′ is formed to not partially contact the part of the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2, but partially. Then, among the portions of the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2, the remainder that does not contact the first auxiliary electrode layer 122' contacts the organic layer 133.

In addition, according to the fourth embodiment, the contact welding 140 in the region where a portion of the first auxiliary electrode layer 121 is exposed by the auxiliary contact hole CT2, the first and second auxiliary electrode layers 121 and 122 ') and the second electrode 134 may be formed at portions overlapping each other.

As described above, in the organic light emitting display device 100d according to the fourth embodiment of the present application, the first and second auxiliary electrode layers 121 and 122 do not entirely contact the auxiliary contact hole CT2, but partially contact the organic light emitting display device 100d. The third embodiment illustrated in FIGS. 4A and 4B, except that the contact welding 140 is formed at portions where the first and second auxiliary electrode layers 121 and 122' and the second electrode 134 overlap each other. Since it is the same as the example, a duplicate description will be omitted below.

Alternatively, as shown in FIGS. 6A and 6B, according to the fifth embodiment, the contact welding 140 is within an area where a portion of the first auxiliary electrode layer 121 is exposed by the auxiliary contact hole CT2, One of the first and second auxiliary electrode layers 121 and 122 ′ and the second electrode 134 may be formed at overlapping portions.

That is, since the second auxiliary electrode layer 122 ′ is formed to partially contact the part of the first auxiliary electrode layer 121 exposed through the auxiliary contact hole CT2, the first auxiliary electrode layer 122 ′ is exposed through the auxiliary contact hole CT2. The rest of the portion of the auxiliary electrode layer 121 that is not in contact with the second auxiliary electrode layer 122' is in contact with the organic layer 133. Accordingly, the contact welding 140 may be formed in a region in which the first auxiliary electrode layer 121 and the second electrode 134 face each other with the organic layer 133 therebetween in the auxiliary contact hole CT2.

As described above, the organic light emitting display device 100e according to the fifth embodiment of the present application is formed at a portion where one of the first and second auxiliary electrode layers 121 and 122' and the second electrode 134 overlap each other. Except for the point, since it is the same as the fourth embodiment shown in Figs. 5A and 5B, a duplicate description will be omitted below.

Meanwhile, unlike the third, fourth, and fifth embodiments, the auxiliary electrode 120 may include three electrode layers formed on different layers.

7A and 7B, according to the sixth embodiment, the auxiliary electrode 120 is the same as the first auxiliary electrode layer 121a and the data line DL formed on the same layer as the gate line GL. The third auxiliary electrode layer 121b formed on the layer and the second auxiliary electrode layer 122 formed on the same layer as the first electrode 131 in a mesh-like pattern are included.

In this case, the first and third auxiliary electrode layers 121a and 121b may be interconnected through a pre-contact hole CT3 penetrating the gate insulating layer 112.

In addition, the contact welding 140 may be formed in the auxiliary contact hole CT2 where the first, second and third auxiliary electrode layers 121a, 121b 122 and the second electrode 134 overlap each other. .

As described above, when the auxiliary electrode 120 is formed of multiple layers, the resistance of the second electrode 134 can be lowered more.

4A and 4B, except that the organic light emitting display device 100f according to the sixth embodiment includes first, second, and third electrode layers in which the auxiliary electrodes 120 are formed on different layers. Since it is the same as the third embodiment shown in the description, the overlapping description will be omitted below.

Meanwhile, unlike the first to sixth embodiments, the contact welding 140 may be formed in an area that does not correspond to the auxiliary contact hole CT2.

That is, as illustrated in FIGS. 8A and 8B, according to the seventh embodiment, the contact welding 140 includes the second auxiliary electrode layer 122 and the second electrode 134 around the auxiliary contact hole CT2. It may be formed in portions overlapping each other.

In this way, since the region where the contact welding 140 is to be formed is not limited to within the auxiliary contact hole CT2, process error can be reduced.

In the organic light emitting display device 100g according to the seventh embodiment, the contact welding 140 is formed in a portion where the second auxiliary electrode layer 122 and the second electrode 134 overlap each other around the auxiliary contact hole CT2. Except that, since it is the same as the sixth embodiment shown in FIGS. 7A and 7B, redundant description will be omitted below.

Meanwhile, unlike the seventh embodiment, the pre-contact hole CT3 for interconnecting the first and third auxiliary electrode layers 121a and 121b may be omitted.

That is, as illustrated in FIGS. 9A and 9B, the organic light emitting display device 100h according to the eighth embodiment is a first exposing a portion of each of the first auxiliary electrode layer 121a and the third auxiliary electrode layer 121b. And second auxiliary contact holes CT2' and CT2. At this time, through the first and second auxiliary contact holes CT2' and CT2, each of the first and third auxiliary electrode layers 121a and 121b and the second auxiliary electrode layer 122 are interconnected.

In addition, the contact welding 140 may be formed in a portion where the second auxiliary electrode layer 122 and the second electrode 134 overlap each other around the auxiliary contact hole CT2.

By doing this, the mask process for forming the pre-contact hole (CT3 in FIG. 8A) can be omitted, and manufacturing cost and manufacturing time can be reduced.

The organic light emitting display device 100h according to the eighth embodiment does not include a pre-contact hole CT3 for interconnecting the first and third auxiliary electrode layers 121a and 121b, and instead, instead of the first and third auxiliary Since each of the electrode layers 121a and 121b and the second auxiliary electrode layer 122 includes first and second auxiliary contact holes CT2' and CT2 for interconnection, it is the same as the seventh embodiment. Hereinafter, a duplicate description will be omitted.

Next, a method for manufacturing an organic light emitting display device according to an exemplary embodiment of the present application will be described with reference to FIGS. 10 and 11A to 11I. For reference, hereinafter, the organic light emitting display device 100c according to the third embodiment shown in FIGS. 4 and 5 will be described as an example, and a method of manufacturing the organic light emitting display device will be described.

As shown in FIG. 10, in the method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present application, a gate line is formed on a substrate, a gate insulating film is formed on a front surface of the substrate, and a data line is formed on the gate insulating film And forming an auxiliary electrode including a first auxiliary electrode layer in a part of the non-emission region (S110), forming an overcoat layer covering the data line and the first auxiliary electrode layer on the entire surface of the gate insulating layer (S120). Forming an auxiliary contact hole penetrating the over contact layer to expose at least a portion of the first auxiliary electrode layer (S130), forming a first electrode in the light emitting region on the overcoat layer, and removing some of the non-emission regions on the overcoat layer. 2 forming an auxiliary electrode layer (S140), forming a bank at least partially overlapping the edge of the first electrode outside the light emitting region on the overcoat layer (S150), the first electrode, the bank and the auxiliary electrode on the front surface on the overcoat layer Forming an organic layer covering the organic layer (S160), forming a second electrode on the front surface on the organic layer (S170), forming a sealing layer facing the second electrode (S180), and removing at least a portion of the auxiliary electrode And forming a contact welding connecting the auxiliary electrode and the second electrode by diffusing them into two electrodes (S190).

As shown in FIG. 11A, a plurality of thin film transistors (TFT), a gate line (GL in FIG. 1 ), a data line (DL in FIG. 1 ), and a first auxiliary electrode layer 121 on the substrate 111. In addition, a gate insulating layer 112 is formed to insulate between the gate line GL and the data line DL. (S110) Here, the first auxiliary electrode layer 121 is formed on the same layer as any one of the gate line GL and the data line DL.

Specifically, the conductive layer on the substrate 111 is patterned to form a gate line GL and a gate electrode 161 branched from the gate line GL. Here, when the first auxiliary electrode layer (not shown) is the same layer as the gate line GL, the first auxiliary electrode layer (not shown) is also formed.

Subsequently, a gate insulating layer 112 covering the gate line GL and the gate electrode 161 is formed on the entire surface of the substrate 111.

An active layer 162 overlapping at least a portion of the gate electrode 161 is formed on the gate insulating layer 112.

When the active layer 162 is an oxide semiconductor that can easily lose semiconductor properties when exposed to an etching process, the etch stopper layer 165 may be formed on the active layer 162.

A conductive layer on the gate insulating layer 112 is patterned to form a data line DL intersecting the gate line GL and source electrodes 163 and drain electrodes 164 overlapping on both sides of the active layer 162. do. Here, when the first auxiliary electrode layer 121 is the same layer as the data line DL, the first auxiliary electrode layer 121 is also formed.

Accordingly, a thin film transistor (TFT) including a gate electrode 161, an active layer 162, a source electrode 163, and a drain electrode 164 is formed.

11B, an overcoat layer 113 covering the thin film transistor (TFT) and the first auxiliary electrode layer 121 is formed on the entire surface of the gate insulating layer 112. (S120)

11C, the overcoat layer 113 is patterned to form a main contact hole CT1 and an auxiliary contact hole CT2. (S130)

The main contact hole CT1 penetrates the overcoat layer 113 to expose a portion of the source electrode 163 and the drain electrode 164 that is not connected to the data line DL.

The auxiliary contact hole CT2 penetrates at least the overcoat layer 113 to expose a portion of the first auxiliary electrode layer 121. Here, when the first auxiliary electrode layer 121 is formed on the same layer as the gate line GL, that is, on the substrate 111, the auxiliary contact hole CT2 is further formed through the gate insulating layer 112.

11D, the conductive layer on the overcoat layer 113 is patterned to form the first electrode 131. (S140)

The first electrode 131 is formed in the emission area EA of each pixel area PA, and is connected to the thin film transistor TFT through the main contact hole CT1.

In addition, when the auxiliary electrode 120 further includes a second auxiliary electrode layer 122 formed on the same layer as the first electrode 131, the second auxiliary in the step of forming the first electrode 131 (S140 ). The electrode layer 122 is further formed.

The second auxiliary electrode layer 122 is formed in the non-emission area NEA and overlaps on at least a portion of the first auxiliary electrode layer 121 through the auxiliary contact hole CT2.

Thus, the auxiliary electrodes 120 including the first and second auxiliary electrode layers 121 and 122 interconnected through the auxiliary contact hole CT2 are formed.

As shown in FIG. 11E, an overlapping bank 132 is formed on the edge of the first electrode 131 on the outer side of the emission area EA on the overcoat layer 113. (S150) Here, the bank 132 may further overlap on the edge of the second auxiliary electrode layer 122.

As shown in FIG. 11F, an organic layer 133 is formed on the entire surface of the overcoat layer 113. (S160)

At this time, the organic layer 133 covers each of the first electrode 131, the bank 132, and the auxiliary electrode 120.

In addition, the step of forming the organic layer 133 (S160) is performed in a vacuum chamber.

11G, the second electrode 134 is formed on the entire surface of the organic layer 133. (S170)

11H, a sealing layer 150 facing the second electrode 134 is formed. (S180)

After forming the sealing layer 150 in this way, the product is transferred out of the vacuum chamber.

Subsequently, as illustrated in FIG. 11I, the secondary electrode 120 is irradiated with the laser LASER that is emitted on the rear surface of the substrate 111 and passes through the substrate 111, and the secondary electrode 120 is applied to the second electrode 134. ) To form contact welding 140. (S190)

At this time, the auxiliary electrode 120 and the second electrode 134 are interconnected by the contact welding 140.

As described above, the method of manufacturing the organic light emitting display device according to the exemplary embodiment of the present application is after forming the sealing layer 150 (S180), outside the vacuum chamber, between the auxiliary electrode 120 and the second electrode 134. The contact welding 140 to be connected is formed. (S190) Thus, while preventing the damage to the organic layer 133, the process may be easier.

Meanwhile, FIGS. 10 and 11A to 11I illustrate a method of manufacturing the organic light emitting display device 100c according to the third embodiment of the present application, but the present application is not limited thereto.

Specifically, the manufacturing method of the organic light emitting display device 100a according to the first embodiment of the present application, except that the auxiliary electrode layer is not formed in the step of forming the first electrode (S140), FIGS. 10 and 11A to This is the same as the third embodiment shown in Fig. 11I.

The manufacturing method of the organic light emitting display device 100b according to the second embodiment of the present application is illustrated in FIGS. 10 and 10, except that the auxiliary electrode layer is not formed in step S110 of forming a gate line, a gate insulating layer, and a data line. It is the same as that of the third embodiment shown in 11a to 11i.

The manufacturing method of the organic light emitting display device 100d according to the fourth embodiment of the present application is a method in which the second auxiliary electrode layer 122' is exposed through the auxiliary contact hole CT2 in step S140 of forming the first electrode. 1 is formed to partially contact the part of the auxiliary electrode layer 121, the contact welding 140 in the step S190 of forming the contact welding 140, the first and second auxiliary electrode layers in the auxiliary contact hole CT2 It is the same as the third embodiment illustrated in FIGS. 10 and 11A to 11I, except that (121, 122') and the second electrode 134 are formed in overlapping regions.

The manufacturing method of the organic light emitting display device 100e according to the fifth embodiment of the present application includes the second welding electrode 140 in the auxiliary contact hole CT2 in the step S190 of forming the contact welding 140. It is the same as the fourth embodiment, except that only the 122' and the second electrode 134 are formed in overlapping regions.

The manufacturing method of the organic light emitting display device 100f according to the sixth embodiment of the present application forms the first and third auxiliary electrode layers 121a and 121b in step S110 of forming a gate line, a gate insulating layer, and a data line. , Except for forming a pre-contact hole CT3 exposing a portion of the first auxiliary electrode layer 121a after forming the gate insulating film, the same as the third embodiment shown in FIGS. 10 and 11A to 11I Do.

In the manufacturing method of the organic light emitting display device 100g according to the seventh embodiment of the present application, in the step of forming the contact welding 140 (S190), the contact welding 140 assists the second in the vicinity of the auxiliary contact hole CT2. It is the same as the sixth embodiment except that the electrode layer 122 and the second electrode 134 are formed in regions overlapping each other.

In addition, in the manufacturing method of the organic light emitting display device 100h according to the eighth embodiment of the present application, in the step of forming an auxiliary contact hole (S130), a portion of each of the first and third auxiliary electrode layers 121a and 121b is exposed. It is the same as the seventh embodiment except that the first and second auxiliary contact holes CT2' and CT2 are formed.

Therefore, redundant description will be omitted.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications and changes are possible within the scope of the present invention without departing from the technical spirit of the present invention. It will be obvious to those who have the knowledge of

100, 100a~100h: organic light emitting display device
GL: Gate line DL: Data line
TFT: Thin film transistor ED: Organic light emitting device
PA: Pixel area EA: Light emitting area
NEA: Non-emission area
111: substrate 112: gate insulating film
113: overcoat layer 120: auxiliary electrode
121, 121a: first auxiliary electrode layer layer
121b: third auxiliary electrode layer
122, 122': second auxiliary electrode
CT1: Main contact hole CT2: Secondary contact hole
131: first electrode 132: bank
133: organic layer 134: second electrode
140: contact welding 150: sealing layer

Claims (16)

In the organic light emitting display device in which a plurality of pixel areas each including a light emitting area and a non-light emitting area are defined in the display area,
Board;
A gate line and a data line intersecting the gate insulating film on the substrate;
A thin film transistor disposed in the pixel area on the substrate;
An overcoat layer covering the thin film transistor on the substrate;
An auxiliary electrode disposed on the substrate on the non-emission region;
A first electrode disposed in the light emitting region on the overcoat layer;
An organic layer disposed on the first electrode and the auxiliary electrode;
A second electrode disposed on the organic layer; And
And contact welding penetrating the organic layer to connect between the auxiliary electrode and the second electrode;
The auxiliary electrode
A first auxiliary electrode layer disposed under the overcoat layer,
A second auxiliary electrode layer disposed on the overcoat layer and connected to the first auxiliary electrode layer through an auxiliary contact hole penetrating the overcoat layer,
The second auxiliary electrode layer has a matrix structure overlapping the gate line and the data line, and is an organic light emitting display device having a wider width than the gate line and a wider width than the data line. According to claim 1,
The first auxiliary electrode layer is disposed on the same layer as any one of the gate line and the data line,
The second auxiliary electrode layer is disposed on the same layer as the first electrode;
The contact welding is an organic light emitting display device that connects any one of the first auxiliary electrode layer and the second auxiliary electrode layer and the second electrode contacting the organic layer. According to claim 2,
An organic light emitting display device in which the second auxiliary electrode layer contacting the first auxiliary electrode layer, the organic layer, and the second electrode are stacked and overlap each other in the auxiliary contact hole penetrating the overcoat layer. The method of claim 3,
The contact welding is an organic light emitting display device that connects the second auxiliary electrode layer and the second electrode, which are in contact with the organic layer, in the auxiliary contact hole. The method of claim 3,
In the auxiliary contact hole, the organic layer further includes a portion in contact with the first auxiliary electrode layer and the second electrode,
The contact welding is an organic light emitting display device that connects the first auxiliary electrode layer and the second electrode that the organic layer contacts in the auxiliary contact hole. The method of claim 4 or 5,
The distance between the contact welding and the substrate positioned in the auxiliary contact hole is less than the distance between the upper surface of the overcoat layer on which the first electrode is disposed and the substrate. The method of claim 3,
The first auxiliary electrode layer is formed on the same layer as the gate line, in a line pattern parallel to the gate line,
The auxiliary electrode
A third auxiliary electrode layer formed on the same layer as the data line and connected to the first auxiliary electrode layer through a pre-contact hole penetrating the gate insulating layer,
The second auxiliary electrode layer is an organic light emitting display device in contact with at least a portion of the third auxiliary electrode layer through the auxiliary contact hole. The method of claim 7,
The contact welding is an organic emission formed in an area where a portion of the third auxiliary electrode layer is exposed by the auxiliary contact hole, and the first, second and third auxiliary electrode layers and the second electrode overlap each other. Display device. The method of claim 7,
The contact welding is an organic light emitting display device formed around an area of the auxiliary contact hole, in a region where the second auxiliary electrode layer and the second electrode overlap each other. The method of claim 3,
The first auxiliary electrode layer is formed on the same layer as the gate line, in a line pattern parallel to the gate line,
The auxiliary electrode
On the same layer as the data line, further comprising a third auxiliary electrode layer formed in a line pattern parallel to the data line,
The second auxiliary electrode layer contacts the at least a portion of the first auxiliary electrode layer through a first auxiliary contact hole passing through the gate insulating layer and the overcoat layer, and the second auxiliary electrode layer passes through the second auxiliary contact hole passing through the overcoat layer. 3 abutting on at least a portion of the auxiliary electrode layer,
The contact welding is an organic light emitting display device formed around an area of the auxiliary contact hole, in a region where the second auxiliary electrode layer and the second electrode overlap each other. delete A method for manufacturing an organic light emitting display device in which a plurality of pixel areas each including a light emitting area and a non-light emitting area are defined in a display area,
A gate line is formed on the substrate, a gate insulating film is formed on the entire surface of the substrate, a data line is formed on the gate insulating film, a thin film transistor is formed in the pixel region, and a first auxiliary electrode layer is formed in the non-emission region. To do;
Forming an overcoat layer covering the data line, the thin film transistor, and the first auxiliary electrode layer on the gate insulating layer;
Forming at least a main contact hole and an auxiliary contact hole penetrating the overcoat layer;
A first electrode connected to the thin film transistor is formed in the light emitting region on the overcoat layer through the main contact hole, and the first auxiliary electrode layer is connected to the non-emission region on the overcoat layer through the auxiliary contact hole. Forming a second auxiliary electrode layer;
Forming a bank on the overcoat layer that overlaps a rim of the first electrode and overlaps a portion of the second auxiliary electrode layer;
Forming an organic layer on the overcoat layer to cover the first electrode, the bank, and the second auxiliary electrode layer;
Forming a second electrode on the organic layer;
Forming a sealing layer facing the second electrode; And
And irradiating a laser to at least a portion of the auxiliary electrode including the first auxiliary electrode layer and the second auxiliary electrode layer to form a contact welding that penetrates the organic layer and connects between the auxiliary electrode and the second electrode. and;
The second auxiliary electrode layer has a matrix structure overlapping the gate line and the data line, and has a wider width than the gate line and a wider width than the data line. The method of claim 12,
The first auxiliary electrode layer is formed on the same layer as any one of the gate line and the data line,
The contact welding is a method of manufacturing an organic light emitting display device connecting any one of the first auxiliary electrode layer and the second auxiliary electrode layer and the second electrode in contact with the organic layer. The method of claim 13,
A method of manufacturing an organic light emitting display device in which the second auxiliary electrode layer, the organic layer, and the second electrode overlap with each other in the auxiliary contact hole penetrating the overcoat layer, in contact with the first auxiliary electrode layer. The method of claim 14,
The contact welding is a method of manufacturing an organic light emitting display device that connects the second auxiliary electrode layer and the second electrode, which are in contact with the organic layer, in the auxiliary contact hole. The method of claim 12,
In the auxiliary contact hole, the organic layer further includes a portion in contact with the first auxiliary electrode layer and the second electrode,
The contact welding is a method of manufacturing an organic light emitting display device that connects the first auxiliary electrode layer and the second electrode that the organic layer contacts in the auxiliary contact hole.

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