KR102403486B1 - Organic electro luminescent device and method of fabricating thereof - Google Patents

Abstract

The present invention relates to an organic electroluminescent device having a structure capable of simply inspecting whether a power supply wiring for each pixel line connected to the thin film transistor is short-circuited at the time of completion of the thin film transistor, wherein a plurality of pixel regions having a plurality of sub-pixel regions A substrate having a display area and a non-display area outside the display area defined thereon, a plurality of thin film transistors provided in each of the plurality of sub-pixel areas, and a thin film transistor connected to any one of the plurality of thin film transistors Between an organic light emitting diode comprising a first electrode, an organic light emitting layer, and a second electrode, and a pixel region extending in a first direction and adjacent to each other in the second direction intersecting the first direction among the plurality of subpixel regions a power line and a data line provided and a gate line extending in the second direction and provided between sub-pixel areas adjacent to each other in the first direction among the plurality of sub-pixel areas; Provided is an organic light emitting device including a shorting bar provided in contact with one end of a power wiring.
In the present invention having such a configuration, the power wiring is configured separately for each pixel area at the completion stage of the thin film transistor, where the thin film transistor and the wiring defect inspection are performed. As a result, repair is possible, thereby reducing the defect rate at the time of final production, and further, in the step of forming the first electrode in the power supply wiring, each power source is provided in the same material and on the same layer constituting the first electrode. Since the shorting bar connected to one end of the wiring is provided, all of the power wirings are electrically connected to an equipotential state, and thus each power wiring has an effect of suppressing a voltage drop phenomenon for each position.

Description

Organic electroluminescent device and method of manufacturing the same

The present invention relates to an organic electroluminescent device, and in particular, an organic electroluminescent device having a structure capable of easily inspecting whether the power wiring for each pixel line connected to the thin film transistor is short-circuited at the time of completion of the thin film transistor; It relates to a manufacturing method thereof.

An organic light emitting diode, which is one of flat panel displays (FPDs), has high luminance and low operating voltage characteristics.

In addition, since it is a self-luminous type that emits light by itself, the contrast ratio is large, it is possible to realize an ultra-thin display, and it is easy to implement a moving image with a response time of several microseconds (㎲), there is no limitation of the viewing angle, and even at low temperature. Since it is stable and driven with a low voltage of 5V to 15V of DC, it is easy to manufacture and design a driving circuit.

Accordingly, the organic electroluminescent device having the above-described advantages has recently been used in various IT devices such as TVs, monitors, and mobile phones.

In such an organic light emitting device, one pixel region includes at least sub-pixel regions for displaying red, green, and blue for full color realization, and each sub-pixel region includes two or more plurality of thin film transistors and these thin film transistors. A plurality of wirings connected to and a storage capacitor and an organic light emitting diode are provided.

In this case, the thin film transistor may be composed of a switching thin film transistor and a driving thin film transistor, and one or more auxiliary thin film transistors may be further provided in order to more stably drive the sub-pixel region and extend the lifespan of the organic light emitting diode.

On the other hand, the wiring connected to the thin film transistor has a gate wiring, a data wiring and a power wiring as main wiring, and when the auxiliary thin film transistor is provided, additionally first and second auxiliary wirings are further included.

In the organic light emitting device having such a configuration, in the step of completing the thin film transistor, the thin film transistor is tested whether the thin film transistor is driven and whether each wiring is disconnected.

However, among the plurality of wirings, wiring excluding the power wiring is formed for each pixel line or each sub-pixel line, so that the disconnection of each pixel line or each sub-pixel line of each wiring can be checked.

However, the power wiring is shown in FIG. 1 (FIG. 1 is a plan view schematically showing only the power wiring in a conventional organic light emitting device) and FIG. As shown, although provided for each pixel line, one end of each power wiring PL is connected by a shorting bar STB provided on the same layer on which the power wiring PL is formed, so that each pixel line It is almost impossible to check for disconnection.

That is, as shown in FIG. 1, when a disconnection occurs in any one pixel line, the power supply wiring PL is electrically connected to the power supply wiring (PL) corresponding to any pixel line even if the wiring disconnection test is performed. PL) is not detected.

Therefore, when the thin film transistor and wiring defect inspection is performed at the time the thin film transistor is completed, it is not possible to determine whether or not the disconnection of the power wiring (PL) is in progress. the current situation.

The present invention has been devised to solve the above problems, and at the time the thin film transistor is completed, the thin film transistor and all wiring connected thereto are inspected for disconnection to provide an organic electroluminescent device having a structure capable of determining whether disconnection is present. that is for that purpose.

According to an embodiment of the present invention for achieving the above object, there is provided an organic electroluminescent device, comprising: a display area including a plurality of pixel areas including a plurality of sub-pixel areas, and a substrate in which a non-display area outside the display area is defined; , a plurality of thin film transistors provided in each of the plurality of sub-pixel regions, and an organic light emitting diode connected to any one of the plurality of thin film transistors and composed of a first electrode, an organic light emitting layer, and a second electrode; a power supply line and a data line extending in one direction and provided between pixel areas adjacent to each other in the second direction intersecting the first direction among the plurality of sub-pixel areas; and a gate line extending in the second direction and provided between sub-pixel areas adjacent to each other in the first direction among the plurality of sub-pixel areas, wherein one end of the power line is in contact with the non-display area And it is characterized in that it forms a configuration including the provided shorting bar.

In this case, a planarization layer having a wiring contact hole exposing one end of the power wiring is provided between the plurality of thin film transistors and the first electrode in the display area and the non-display area, and between the shorting bar and the power wiring One end may be configured to contact each other through the wiring contact hole, and further, the shorting bar may be made of the same material as the first electrode.

An organic electroluminescent device according to another embodiment of the present invention includes a substrate in which a display area including a plurality of pixel areas including a plurality of sub-pixel areas and a non-display area outside the display area are defined, and the plurality of sub-pixel areas. A plurality of thin film transistors provided in each pixel area, an organic light emitting diode connected to any one of the plurality of thin film transistors and comprising a first electrode, an organic light emitting layer, and a second electrode, and extending in a first direction, , a power line and a data line provided between pixel areas adjacent to each other in the second direction intersecting the first direction among the plurality of sub-pixel areas; and a gate line extending in the second direction and provided between sub-pixel regions adjacent to each other in the first direction among the plurality of sub-pixel regions. and a shorting bar spaced apart from one end of the power wiring in the non-display area and made of the same material on the same layer on which the power wiring is formed, and in contact with one end of the power wiring and the shorting bar in the non-display area It constitutes a configuration including the provided connection pattern.

In this case, a planarization layer having a wiring contact hole exposing one end of the power wiring and a shorting bar contact hole exposing the shorting bar between the plurality of thin film transistors and the first electrode is provided in the display area and the non-display area and the connection pattern may be configured to contact one end of the power wiring and the shorting bar through the wiring contact hole and the shorting bar contact hole, and further, the connection pattern may be made of the same material as the first electrode have.

Meanwhile, in the organic electroluminescent device according to one or another embodiment of the present invention, a first auxiliary wiring extending in the first direction to the boundary of the sub-pixel region and the second direction to the boundary of the pixel region and a second auxiliary wiring extending to and spaced apart from the gate wiring is provided, wherein the plurality of thin film transistors includes a switching thin film transistor connected to the data wiring and the gate wiring, and a driving thin film transistor connected to the switching thin film transistor and the power supply wiring; , a sensing thin film transistor connected to the driving thin film transistor and the second auxiliary wiring.

In addition, the power wiring is provided on the same layer on which the source and drain electrodes of the plurality of thin film transistors are formed, and may be made of the same material as the source and drain electrodes.

The organic light emitting device according to each of the first embodiment of the present invention and its modifications is configured such that the power wiring is separated for each pixel area at the completion stage of the thin film transistor in which the thin film transistor and the wiring defect inspection are performed. When the inspection is carried out, it is possible to determine whether the power wiring is disconnected, thereby enabling repair, thereby reducing the defect rate at the time of final production.

Furthermore, in the organic electroluminescent device according to the first embodiment of the present invention and its modifications, in the step of forming the first electrode of the power wiring, the same material and the same layer constituting the first electrode, one end of each power wiring Since the shorting bar connected to the power wiring is provided, all of the power wirings are electrically connected to an equipotential state, so that each power wiring has an effect of suppressing a voltage drop phenomenon for each position.

In addition, although the organic light emitting device according to the second embodiment of the present invention and its modifications is also formed on the interlayer insulating film, which is the same layer on which the power wiring is formed, the shorting bar is formed on the same layer as the source and drain electrodes of the thin film transistor in the completed state. Since one end of the power wiring and the shorting bar are in contact with each other and are not electrically connected, it is possible to know whether the disconnection of each of the power wirings is defective when performing a defect inspection, thereby enabling repair, and thus It has the effect of reducing the defect rate.

In addition, when the organic light emitting diode according to the second embodiment of the present invention is completed as a final product, each power wiring is electrically connected by a shorting bar, so it is possible to implement an equipotential by suppressing the voltage drop at each position of the power wiring. have an advantage

1 is a plan view schematically illustrating only power wiring in a conventional organic electroluminescent device.
2 is a cross-sectional view of a portion of FIG. 1 taken along the cutting line II-II.
3 is a plan view of one pixel area as a part of the display area in the organic light emitting diode according to an embodiment of the present invention.
4 is a plan view schematically illustrating only the power wiring in the organic light emitting device according to an embodiment of the present invention.
5 is a plan view illustrating power wiring in a state in which the source and drain electrodes of the thin film transistor are completed in the organic electroluminescent device according to the embodiment of the present invention.
6 is a circuit diagram of one sub-pixel region (a first sub-pixel region) of an organic light emitting diode according to an embodiment of the present invention.
7 is a cross-sectional view of a portion of FIG. 3 taken along a cutting line VII-VII as a view of an organic electroluminescent device according to a first embodiment of the present invention.
8 is a view of an organic light emitting diode according to a first embodiment of the present invention, and is a cross-sectional view of a portion of FIG.
9 is a cross-sectional view of the portion taken along the cutting line IX-IX of FIG. 4 as a view of the organic electroluminescent device according to the first embodiment of the present invention.
10 is a cross-sectional view of one end of the power wiring in the step of performing a defect inspection immediately after forming the thin film transistor and the power wiring in the organic electroluminescent device according to the first embodiment of the present invention. Sectional view of a section cut along X-X.
11 is a diagram illustrating a planar structure of power wiring and a shorting bar of an organic light emitting diode according to a modified example of the first embodiment of the present invention.
12 is a view showing a cross-sectional structure of a power wiring and a shorting bar of an organic light emitting diode according to a modified example of the first embodiment of the present invention.
13 is a plan view schematically illustrating only power wiring in the organic electroluminescent device according to the second embodiment of the present invention.
14 is a cross-sectional view of an organic electroluminescent device according to a second embodiment of the present invention, taken along the cutting line XIV-XIV of FIG. 13;
15 is a diagram illustrating a planar structure of a power supply wiring and a shorting bar of an organic light emitting diode according to a modified example of the second embodiment of the present invention.
16 is a view showing the cross-sectional structure of the power wiring and the shorting bar of the organic electroluminescent device according to a modified example of the second embodiment of the present invention.

Hereinafter, a preferred embodiment according to the present invention will be described in detail with reference to the drawings.

3 is a plan view of one pixel area as a part of the display area in the organic electroluminescent device according to the first embodiment of the present invention, and FIG. 4 is a plan view of the organic electroluminescent device according to the first embodiment of the present invention. It is a plan view schematically showing only the power wiring, and FIG. 5 is a plan view showing the power wiring in a state in which the source and drain electrodes of the thin film transistor are completed in the organic electroluminescent device according to the first embodiment of the present invention, FIG. is a circuit diagram of one sub-pixel region (first sub-pixel region) of the organic electroluminescent device according to the first embodiment of the present invention.

In this case, for convenience of explanation, the first, second, and third sub-pixel areas SP1, SP2, and SP3 are three sub-pixel areas SP1, SP2, and SP3 located adjacent to each other in one direction in each pixel area P. , and three data lines DL provided for each of these sub-pixel areas SP1, SP2, and SP3 are defined as first, second, and third data lines DL1, DL2, and DL3, respectively.

As shown, the organic light emitting device 101 according to the first embodiment of the present invention extends in the first direction, which is the vertical direction, at the boundary of each pixel region _P , and a power supply line ( PL) is provided, and the first and second data lines DL1 and DL2 are spaced apart from each other at the boundary between the first and second sub-pixel regions SP1 and SP2 to be spaced apart from the power line PL. The first auxiliary line AL1 and the third data line DL3 are disposed adjacent to each other at a boundary between the second and third subpixel areas SP2 and SP3.

The first, second, and third data lines DL1, DL2, DL3 and the first auxiliary line AL1 arranged in the first direction are all formed of the same metal material on the same layer, and each of these lines ( DL1, DL2, DL3, and AL1) are characterized in that they are formed separately for each pixel line or each sub-pixel line.

At this time, as one of the most characteristic configurations of the organic light emitting diode 101 according to the first embodiment of the present invention, the power supply wiring PL is similar to the data wiring DL and the first auxiliary wiring AL1. It is characterized in that each of the pixel lines is spaced apart from each other and formed separately without being connected to each other at one end.

In the case of a conventional organic light emitting device, the power wiring (PL of FIG. 1) has one end of the shorting bar (STB of FIG. 1) formed of the same metal material on the same layer as the power wiring (PL of FIG. 1). All of the ends were electrically connected.

However, in the case of the organic light emitting device 101 according to the first embodiment of the present invention, each of the power wiring PL is a layer on which the power wiring PL is formed, that is, the thin film transistors STr, DTr, SeTr. In the layer in which the source and drain electrodes (133a, 133b, 133c), (136a, 136b, 136c) are formed, each end is not connected, and the power supply wiring PL is separated from each other. to be.

Next, in a second direction intersecting the first direction, the gate line GL and the second auxiliary line AL2 are provided to be spaced apart from each other for each pixel line.

Further, to each pixel area P, the signal voltage applied through the first auxiliary line AL1 is applied to each of the subpixel areas SP1, SP2, and SP3, which is electrically connected to the first auxiliary line AL1. A first auxiliary pattern AP1 and a second auxiliary pattern AP2 electrically connected to the power supply line PL are provided.

The gate wiring GL and the second auxiliary wiring AL2 are made of the same material on the same layer and have at least one insulating layer (not shown) from the wirings DL1 , DL2 , DL3 , and AL1 extending in the first direction. .

In this case, the wirings DL1, DL2, DL3, and AL1 extending in the first direction are the source and drain electrodes (133a, 133b, 133c), (136a, 136b, 136c) of the thin film transistors (STr, DTr, SeTr). ) is made of the same metal material constituting the source and drain electrodes (133a, 133b, 133c, 136a, 136b, 136c) on the formed layer, and the wirings GL and AL2 extending in the second direction Each of the thin film transistors (STr, DTr, SeTr) is made of the same metal material forming the gate wiring (GL) in the layer formed with the gate electrodes (115a, 115b, 115c).

Meanwhile, in each of the sub-pixel regions SP1, SP2, and SP3, a switching thin film transistor STr, a driving thin film transistor DTr, and a sense thin film transistor SeTr as auxiliary thin film transistors are provided.

That is, in each pixel area P, a switching thin film transistor STr connected to the gate line GL and data line DL, and a driving thin film connected to the switching thin film transistor STr and a power supply line PL. The transistor DTr, the driving thin film transistor DTr, and the sense thin film transistor SeTr connected to the first auxiliary line AL1 and the second auxiliary line AL2 are provided.

In this case, the first auxiliary wiring AL1 (LS) is connected to the gate electrode 115c of the sense thin film transistor SeTr, and the second auxiliary wiring AL2 is the source electrode of the sense thin film transistor SeTr. (133c) is electrically connected.

The first auxiliary line AL1 (LS) has the same role as the gate line GL for applying a scan voltage to the gate electrode 115a of the switching thin film transistor STr, and the sense thin film transistor It serves as a sense wiring for applying a sense voltage to the gate electrode 115c of (SeTr).

In addition, the second auxiliary wiring AL2 serves as a passage for periodically discharging charges charged in the storage capacitor StgC through the sense thin film transistor SeTr.

In more detail, looking at the connection relationship between the components provided in each of the sub-pixel regions SP1, SP2, and SP3, the source electrode 133b of the driving thin film transistor DTr is connected to the power supply wiring PL, , the drain electrode 136b of the driving thin film transistor DTr is connected to the drain electrode 136c of the sense thin film transistor SeTr and the storage capacitor StgC, and the drain electrode 136b of the switching thin film transistor STr ( 136a is connected to the gate electrode 115b of the driving thin film transistor DTr.

At this time, the drain electrode 136a of each of the switching thin film transistors STr and the drain electrode 136b of each driving thin film transistor DTr provided in each of the sub-pixel regions SP1, SP2, and SP3 are an insulating layer, that is, a gate. The storage capacitor StgC is formed by overlapping each other with an insulating layer (not shown) and an interlayer insulating layer (not shown) interposed therebetween.

In addition, in each of the light emitting regions (regions including organic light emitting diodes) provided in each of the sub-pixel regions SP1, SP2, and SP3, the first electrode 150 is connected to the drain electrode 136b of the driving thin film transistor DTr. ), an organic light emitting diode (E) comprising an organic light emitting layer 155 and a second electrode 160 is provided, the drain electrode 136c of the driving thin film transistor DTr and the organic light emitting diode E of the first electrodes 150 are connected to each other.

On the other hand, as another characteristic configuration in the organic electroluminescent device 101 according to the first embodiment of the present invention, the layer connected to one end of each power supply wiring PL and formed with each power supply wiring PL. In the layer on which the first electrode 150 of the organic light emitting diode E is formed, one end of each power supply wiring PL corresponds to the non-display area NA in which the power supply wiring PL is formed. A shorting bar (STB) overlapping one end is provided, and the shorting bar (STB) is provided through a wiring contact hole (Lch) exposing one end of each power supply line (PL) through a wiring contact hole (Lch). ) is in contact with

Therefore, each of the power wirings PL is electrically connected to the same layer as the first electrode 150 by a shorting bar STB made of the same material at the time when the first electrode 150 is formed. characteristic.

The reason that each power wiring PL is brought into contact with the shorting bar STB provided on a different layer is so that the power wiring PL achieves an equipotential with respect to the entire surface of the display area DA. The same voltage is applied to the entire surface of the display area DA through the power wiring PL. In this case, each power wiring PL has a voltage dropping phenomenon at each position in the display area DA due to its internal resistance. may occur, and in order to prevent this, one end of each power wiring PL is connected with a shorting bar STB interposed therebetween.

At this time, the organic light emitting device 101 according to the first embodiment of the present invention is performed at the time when the thin film transistors STr, DTr, SeTr are completed while electrically connecting one end of each power supply wiring PL. In order to be able to know whether each power wiring PL is disconnected during the defect inspection, the shorting bar STB is placed on the insulating layer after the power wiring PL is formed, not the layer on which the power wiring PL is formed. (not shown) is formed on the layer on which the first electrode 150 is formed.

In this way, each power wiring (PL) and the shorting bar (STB) are dualized to form different layers, more precisely, the shorting bar (STB) on the insulating layer (not shown) located above the power wiring (PL), so that the power wiring ( PL) is completed, that is, at the time when the source and drain electrodes (133a, 133b, 133c), (136a, 136b, 136c) of the thin film transistors STr, DTr, SeTr are completed. It is possible to know whether the power wiring (PL) is disconnected.

In the case of the conventional organic light emitting device (1 in FIG. 1), the power wiring (PL in FIG. 1) has a shorting bar (STB in FIG. 1) formed on the same layer, and branches from the shorting bar (STB in FIG. 1). When the thin film transistor (not shown) is completed by forming a configuration connected to each of the power wirings PL in the form of Since it was electrically connected, it was not possible to determine whether the power wiring (PL of FIG. 1) was disconnected during the defect inspection.

However, in the organic light emitting diode 101 according to the first embodiment of the present invention, the source and drain electrodes (STr, DTr, SeTr) of the thin film transistors (STr, DTr, SeTr) are provided by the dual power supply wiring (PL) and the shorting bar (STB). When (133a, 133b, 133c), (136a, 136b, 136c)) are completed, the shorting bar STB is not formed, so that each power wiring PL is separately formed for each pixel line. If it proceeds, it is possible to know whether the power wiring PL is disconnected.

Meanwhile, in the organic light emitting diode 101 according to the first embodiment of the present invention, the shorting bar STB is made of the same material constituting the first electrode 150 as an example, but the shorting bar STB is made of the same material as the first electrode 150 . ) is not necessarily made of the material constituting the first electrode 150, and may be made of any conductive material or metallic material as long as it is provided after the power wiring PL is formed.

Hereinafter, the configuration of the organic electroluminescent device 101 according to the first embodiment of the present invention through the cross-sectional structure will be described in more detail.

7 is a view of an organic electroluminescent device according to a first embodiment of the present invention, and is a cross-sectional view of FIG. 3 taken along the cutting line VII-VII, and FIG. 8 is an organic light emitting diode according to the first embodiment of the present invention. As a drawing of the electroluminescent device, FIG. 3 is a cross-sectional view of a portion cut along the cutting line VIII-VIII, and FIG. 9 is a view of the organic electroluminescent device according to the first embodiment of the present invention, taken along the cutting line IX- It is a cross-sectional view of the part cut along IX, and FIG. 10 is a power supply in the step of performing a defect inspection immediately after forming the thin film transistor and the power wiring in the organic electroluminescent device 101 according to the first embodiment of the present invention. As a cross-sectional view of one end of the wiring, it is a cross-sectional view taken along the cutting line X-X in FIG. 5 .

At this time, the switching and driving thin film transistors (STr and DTr in FIG. 3 ) and the sense thin film transistor (SeTr in FIG. 3 ) for driving each subpixel region SP1 (not shown) have the same cross-sectional configuration and are thus representatively driven Only the cross-sectional configuration of the thin film transistor (DTr) will be described, and for convenience of explanation, each of these thin film transistors among the components constituting the switching and driving thin film transistors (STr and DTr in FIG. 3) and the sense thin film transistor (SeTr in FIG. 3) Components formed only corresponding to the transistors (STr and DTr in FIG. 3 , and SeTr in FIG. 3 ), that is, the gate electrode 115 and the semiconductor layer 120 , and the source electrode 133 and the drain electrode 136 spaced apart from each other At the same time, a, b, and c are assigned at the end of each number in the order of switching, driving and sensing thin film transistors (STr, DTr in FIG. 3, SeTr in FIG. 3) at the same time, Since the gate insulating layer 118 , the interlayer insulating layer 123 , and the planarization layer 140 are connected to each other over the entire surface of the display area DA, only the same reference numerals are given.

As shown, in each sub-pixel region (SP1, not shown) in the organic electroluminescent device 101 according to the first embodiment of the present invention, a plurality of thin film transistors (STr, DTr in FIG. 3, and SeTr in FIG. 3) ) and a first substrate 110 provided with an organic light emitting diode (E), and an encapsulation agent for protecting the organic light emitting diode (E) against it and preventing moisture or oxygen from entering from the outside It is configured including two substrates 170 .

In this case, although the second substrate 170 is provided in a form facing and spaced apart from the first substrate 110 in the organic electroluminescent device 101 according to the first embodiment of the present invention, the second substrate 170 is The second substrate 170 may be configured to contact the second electrode 160 provided on the uppermost layer of the first substrate 110 in the form of a film including an adhesive layer, or an upper portion of the second electrode 160 . As an organic insulating layer (not shown) or an inorganic insulating layer (not shown) is further provided, it may be omitted as it is used as an encapsulation layer (not shown) by itself.

Since the organic electroluminescent device 101 according to the first embodiment of the present invention has structural characteristics in the first substrate 110 , the configuration of the first substrate 110 will be mainly described hereinafter.

The first substrate 110 includes switching, driving and sensing thin film transistors (STr, DTr in FIG. 3, SeTr in FIG. 3) inside or at the boundary of each sub-pixel region SP1 (not shown) in each pixel region P. of three thin film transistors are provided, and an organic light emitting diode (E) connected to the driving thin film transistor (DTr) is provided.

In addition, a gate line GL and data lines DL1, DL2, and D13 that are connected to the switching thin film transistor (not shown) and cross each other are provided, and the data lines DL1 crossing the gate line GL and crossing each other are provided. A power supply line PL is provided at the boundary between the pixel regions P that are spaced apart from DL2 and D13 in parallel with the second and third parts passing through each pixel region P in the first vertical direction. A second auxiliary line AL2 is provided parallel to the data lines DL1, DL2, and D13 at the boundary of the pixel area (SP2 in FIG. 2 and SP3 in FIG. 2).

In addition, each pixel area P is electrically connected to the first auxiliary line AL1 and applies a signal voltage applied through the first auxiliary line AL1 to each subpixel area SP1 (not shown). There are provided a first auxiliary pattern AP1 for this purpose and a second auxiliary pattern AP2 in contact with the power wiring PL through a contact hole chl.

Meanwhile, the driving thin film transistor DTr is connected to the switching thin film transistor (STr in FIG. 3 ) and the sense thin film transistor (SeTr in FIG. 3 ) while being connected to the power supply wiring PL and the organic light emitting diode E The sense thin film transistor (SeTr in FIG. 3) is connected to the driving thin film transistor DTr through the first auxiliary line AL1 and the second auxiliary pattern AP2 as a medium.

The driving thin film transistor DTr includes an interlayer having a gate electrode 115b, a gate insulating layer 118, an oxide semiconductor layer 120b, and a semiconductor layer contact hole sch on the first substrate 110. The insulating layer 123 and the source electrode 133b and the drain electrode 136b are spaced apart from each other on the interlayer insulating layer 123 and respectively contact the oxide semiconductor layer 120b through the semiconductor layer contact hole sch. It is constructed in a sequentially stacked form.

The switching thin film transistor (STr in FIG. 3 ) and the sense thin film transistor (SeTr in FIG. 3 ) also have the same stacked structure as the driving thin film transistor DTr.

In addition, the source electrode 133b of the driving thin film transistor DTr is connected to the power supply line PL via the second auxiliary pattern AP2.

On the other hand, on the same layer on which the gate electrode 115b of the driving thin film transistor DTr is formed, that is, on the first substrate 1410, it is made of the same metal material as the driving gate electrode 115b and includes a gate wiring GL, and the The second auxiliary pattern AP2 is formed to be spaced apart from the second auxiliary line AL2, and in each sub-pixel area SP1 (not shown) is in contact with the driving gate electrode 115b of the driving thin film transistor DTr. A first electrode 116 of the storage capacitor StgC in contact through the hole chl is provided.

In addition, on the same layer on which the source and drain electrodes 133b and 136b of the driving thin film transistor DTr are formed, that is, on the interlayer insulating film 123, the same as the source and drain electrodes 133b and 136b of the driving thin film transistor DTr. The data lines DL1 , DL2 and DL3 are formed of a metal material and are spaced apart from each other in a first direction crossing the gate line GL, and a power line PL is formed at the boundary of each pixel area P. ) is being formed.

Furthermore, in each pixel area P, a first auxiliary line AL1 is formed adjacent to and spaced apart from the third data line DL3, and a first auxiliary pattern AP1 is formed in contact with the first auxiliary line AL1. this is being formed

The first auxiliary pattern AP1 is removed from a portion intersecting the first, second, and third data lines DL1, DL2, and DL3 to form a spaced-apart shape. It is characterized in that it is in contact with the first connection pattern cp1 formed on the same layer as the gate electrode 115b through the contact hole chl exposing the end thereof. As a result, the first auxiliary pattern AP1 forms the source electrode (133c in FIG. 3 ) of each sense thin film transistor (SeTr in FIG. 3 ) provided in each subpixel region SP1 (not shown) within each pixel region P. ) to form a structure capable of transmitting the signal voltage applied to the first auxiliary line AL1.

In addition, in each sub-pixel region SP1 (not shown) on the interlayer insulating layer 123 , the first storage electrode ( 116 and a second storage electrode 137 is formed. In this case, the second storage electrode 137 is connected to the drain electrode 136b of the driving thin film transistor DTr and the drain electrode 136c in FIG. 3 of the sense thin film transistor (SeTr in FIG. 3 ).

On the other hand, the gate electrode (115a of FIG. 3) of the switching thin film transistor (STr in FIG. 3) is connected to the gate line GL, and the source electrode (STr in FIG. 3) of the switching thin film transistor (STr in FIG. 3) 133a) is connected to the data line DL1.

In addition, the second auxiliary wiring AL2 formed to be spaced apart from the gate wiring GL constitutes a gate electrode (115c in FIG. 3) of the sense thin film transistor (SeTr in FIG. 3), and the first auxiliary wiring AL2. The first auxiliary pattern AP1 connected to the wiring AL1 is connected to the source electrode 133c in FIG. 3 of the sense thin film transistor (SeTr in FIG. 3), and The drain electrode 136c in FIG. 3 is connected to the drain electrode 136b of the driving thin film transistor DTr.

And the oxide semiconductor layer 120a (120b in FIG. 3, 120c in FIG. 3), the source electrode 133a (133b in FIG. 3, 133c in FIG. 3), and the oxide semiconductor layer 120a (120b in FIG. 3, 120b in FIG. 3) 120c) and the drain electrode 136a (136b in FIG. 3, 136c in FIG. 3) is a semiconductor layer contact that exposes the oxide semiconductor layer 120a (120b in FIG. 3, 120c in FIG. 3) to the interlayer insulating film 123 As the hole (sch) is provided, it is configured to contact each other through the semiconductor layer contact hole (sch).

That is, between two components formed by different layers, a contact hole chl or a semiconductor layer contact hole is formed in an insulating layer interposed between the two components, for example, the gate insulating film 118 or/and the interlayer insulating film 123 . (sch) is provided, and two components provided in different layers are in contact with each other through the contact hole chl or the semiconductor layer contact hole sch.

Meanwhile, in the drawings, the switching and driving thin film transistor (STr, DTr in FIG. 3) and the sense thin film transistor (SeTr in FIG. 3) form a bottom gate structure as an example, but the switching and driving thin film transistor It will be apparent that the stacked configuration of the transistor (STr and DTr in FIG. 3 ) and the sense thin film transistor (SeTr in FIG. 3 ) can be variously modified.

For example, the switching and driving thin film transistors (STr and DTr in FIG. 3 ) and the sense thin film transistor (SeTr in FIG. 3 ) may have a polysilicon semiconductor layer and may be configured as a top gate type.

In this case, the switching and driving thin film transistors (STr and DTr in Fig. 3) and the sense thin film transistor (SeTr in Fig. 3) are the active region of pure polysilicon and the source and drain regions of polysilicon doped with impurities on both sides thereof. An interlayer insulating film having a semiconductor layer, a gate insulating film, a gate electrode formed to overlap the active region, and a semiconductor layer contact hole exposing the source and drain regions, respectively, and the source and the source and the drain layer through the semiconductor layer contact hole, respectively It is configured to include source and drain electrodes that are in contact with the drain region and are spaced apart from each other.

Meanwhile, the gate electrodes 115a, 115b in FIG. 3, and 115c in FIG. 3), the gate wiring GL, the data wirings DL1, DL2, DL3, the power supply wiring PL, and the source and drain electrodes ((FIG. 3) 133a, 133b, 133c in FIG. 3), (136a, 136b in FIG. 3, 136c in FIG. 3), first and second auxiliary wirings AL1 and AL2 and first and second auxiliary patterns AP1 and AP2 Silver is a metal material having a low resistance property, for example, one selected from copper (Cu), copper alloy (AlNd), aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), and molybdenum (MoTi); As it is made of two or more materials, a single layer or a multi-layer structure of more than double layers is formed.

On the other hand, in the organic light emitting device 101 according to the first embodiment of the present invention, the power wiring PL, which is one of the most characteristic components, is formed on the interlayer insulating film 123 at the boundary of each pixel region P. is formed in a separate state for each pixel line, and a shorting bar STB is formed on the interlayer insulating layer 123 in the non-display area NA where one end of each power wiring PL is located. It is characterized in that one end of each power wiring PL is separated for each pixel line.

Accordingly, the organic electroluminescent device 101 according to the first embodiment of the present invention is formed on the interlayer insulating film 123 on the source and drain electrodes ((FIG. 3) of each thin film transistor (STr, DTr in FIG. 3, and SeTr in FIG. 3). 133a, 133b, 133c in FIG. 3), (136a, 136b in FIG. 3, 136c in FIG. 3) are formed and each thin film transistor (STr, DTr in FIG. 3, SeTr in FIG. 3) is completed. When the thin film transistor (STr, DTr in FIG. 3, SeTr in FIG. 3) and each wiring are inspected for disconnection, the power supply wiring (PL) can also be inspected for disconnection, and it is possible to clearly check whether the disconnection is defective. have.

When a disconnection defect of the power supply wiring (PL) is confirmed, welding is performed as an example of a repair process in the current state, that is, in a state where the thin film transistor is completed, to repair the disconnected part of the power supply wiring (PL). It is possible to prevent disconnection of PL).

Next, planarization of a flat surface over the power wiring PL, the switching and driving thin film transistors (STr, DTr in FIG. 3), and the sense thin film transistor (SeTr in FIG. 3) separated for each pixel area line in this way The layer 140 is formed in the non-display area NA at which one end of the power wiring PL is located, including the entire surface of the display area DA.

At this time, although not shown in the drawings, an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) between the planarization layer 140 and each thin film transistor (STr, DTr in FIG. 3, SeTr in FIG. 3) A protective film (not shown) made of may be further formed.

In the planarization layer 140 (including the passivation layer (not shown) when a passivation layer (not shown) is formed), a drain contact hole 143 that corresponds to the driving thin film transistor DTr and exposes a drain electrode 136b thereof This is being provided. The drain contact hole 143 is provided only in correspondence with the drain electrode 136b of the driving thin film transistor DTr, and the drain electrode (FIG. It is not formed for 136a in 3, 136c in FIG. 3). The drain contact hole 143 is to electrically connect the drain electrode 136b of the driving thin film transistor DTr and the first electrode 150 of the organic light emitting diode E.

At this time, as another structural feature of the organic electroluminescent device 101 according to the first embodiment of the present invention, the planarization layer 140 has each of the above angles in the non-display area NA outside the display area DA. It is characterized in that a wiring contact hole Lch exposing one end of each of the power wirings PL is provided with respect to one end of the power wirings PL.

In this way, the wiring contact hole Lch for exposing one end of each power wiring PL is provided in contact with a shorting bar STB connecting one end of each power wiring PL later. in order to achieve

Next, a first electrode 150 in contact with the driving drain electrode 136b through the drain contact hole 143 for each sub-pixel region SP1 (not shown) is formed on the planarization layer 140 .

In the drawing, the first electrode 150 is made of a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) to serve as an anode electrode. is shown as an example.

However, this first electrode 150 may form a double-layer structure when the organic light emitting device operates in the top light emitting method, and in this case, the upper layer of the first electrode 150 serves as an anode electrode, and the The lower layer is formed to serve as a reflective layer.

That is, the upper layer of the first electrode 150 is made of a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO) or indium-zinc-oxide (IZO) to serve as an anode electrode, , the lower layer of the first electrode 150 is made of any one of aluminum (Al), aluminum-neodymium (AlNd), silver (Ag), silver-palladium-copper (APC), which is a metal material or alloy having excellent reflection efficiency. may be configured.

In this case, the light emitted from the organic light emitting layer 155 formed on the first electrode 150 is reflected upward and recycled to improve luminous efficiency.

However, the first electrode 150 does not necessarily have a double-layer structure, and a transparent conductive material having a relatively large work function value, for example, indium-tin-oxide (ITO), to serve as an anode electrode when operating in a bottom emission mode. ) or indium-zinc-oxide (IZO) may form a single-layer structure.

In the drawings, the first electrode 150 has a single-layer structure as an example.

And as one of the characteristic configurations of the organic light emitting device 101 according to the first embodiment of the present invention, each of the power wiring PLs is located in the non-display area NA where one end of the power wiring PL is located. A shorting bar STB is formed in contact with one end of each of the power wirings PL through a wiring contact hole Lch exposing one end of the .

The shorting bar STB may be formed of the same material constituting the first electrode 150 on the planarization layer 140 . In this case, when the first electrode 150 has a single layer structure, a single layer When the first electrode 150 has a double layer structure, it may have a double layer structure.

Meanwhile, in the organic light emitting diode 101 according to the first embodiment of the present invention, the shorting bar STB is made of the same material constituting the first electrode 150 as an example, but the shorting bar STB is made of the same material as the first electrode 150 . ) is not necessarily made of the material constituting the first electrode 150, and may be made of any conductive material or metallic material as long as it is provided after the power wiring PL is formed.

In the organic electroluminescent device 101 according to the first embodiment of the present invention, a shorting bar STB electrically connecting one end of each power wiring PL in the step of forming the first electrode 150 is provided. In the finally completed stage as formed, each power wiring PL is substantially electrically connected by the shorting bar STB, whereby the voltage for each position caused by the internal resistance of the power wiring PL itself. drop phenomenon can be suppressed.

Meanwhile, a bank 153 is formed at the boundary of each sub-pixel region SP1 (not shown) above the first electrode 150 .

In this case, the bank 153 is formed to surround each sub-pixel region SP1 (not shown), overlap the edge of the first electrode 150 with a predetermined width, and expose the central portion of the first electrode 150 . is becoming

The bank 153 having such a configuration is made of a transparent organic insulating material, for example, poly imide, or a black material, for example, black resin.

In addition, an organic emission layer 155 is formed on the first electrode 150 surrounded by the bank 153 in each of the sub-pixel regions SP1 (not shown).

In addition, a metal material having a relatively small work function value, for example, aluminum (Al), an aluminum alloy ( AlNd), silver (Ag), magnesium (Mg), gold (Au), aluminum magnesium alloy (AlMg) of any one or a mixture of two or more of the second electrode 160 is formed.

Meanwhile, in each sub-pixel region SP1 (not shown), the first and second electrodes 150 and 160 and the organic light emitting layer 155 formed therebetween constitute an organic light emitting diode (E).

Although not shown in the drawing, between the first electrode 150 and the organic light emitting layer 155 and between the organic light emitting layer 155 and the second electrode 160 , a multilayer structure is provided to improve the luminous efficiency of the organic light emitting layer 155 , respectively. A first emission compensation layer (not shown) and a second emission compensation layer (not shown) may be further formed.

In this case, the multi-layered first emission compensation layer (not shown) is sequentially stacked on the first electrode 150 and may include a hole injection layer and a hole transporting layer, Two emission compensation layers (not shown) are sequentially stacked from the organic emission layer 155 and may include an electron transporting layer and an electron injection layer.

Meanwhile, although the first emission compensation layer (not shown) and the second emission compensation layer (not shown) have a double-layer structure as an example, it is not necessarily necessary to form a double-layer structure. That is, the first emission compensation layer (not shown) may be a hole injection layer or a hole transport layer to form a single layer structure, and the second emission compensation layer (not shown) may also become an electron injection layer or an electron transport layer to form a single layer. structure can be achieved.

In addition, the first emission compensation layer (not shown) may further include an electron blocking layer, and the second emission compensation layer (not shown) may further include a hole blocking layer.

And the organic light emitting diode 101 according to the first embodiment of the present invention corresponds to the first substrate 110 having the above-described configuration, a second substrate for encapsulation of the organic light emitting diode (E). 170 is provided.

In this case, the first substrate 110 and the second substrate 170 are provided with an adhesive (not shown) made of a sealant or a frit along their edges, and the first substrate ( 110) and the second substrate 170 are bonded to each other to maintain the panel state.

At this time, the space between the first substrate 110 and the second substrate 170 spaced apart from each other may have a vacuum state or may have an inert gas atmosphere by being filled with an inert gas.

The second substrate 170 for the encapsulation may be made of plastic having a flexible characteristic or a glass substrate.

Meanwhile, the organic electroluminescent device 101 according to the first embodiment of the present invention may have a configuration in which the second substrate 170 for encapsulation is omitted.

That is, the second substrate 170 may be configured to contact the second electrode 168 provided on the uppermost layer of the first substrate 110 in the form of a film including an adhesive layer, or the second electrode (160) An organic insulating film (not shown) or an inorganic insulating film (not shown) is further provided on the upper portion to form a capping film, and the organic insulating film (not shown) or the inorganic insulating film (not shown) encapsulates itself. It may be used as a film (not shown), and in this case, the second substrate 170 is omitted.

In the organic light emitting device 101 according to the first embodiment of the present invention having such a configuration, the power wiring PL is the thin film transistor (STr, DTr in FIG. 3, SeTr in FIG. 3) and the wiring is inspected for defects. In the completion stage of the thin film transistor (STr, DTr in FIG. 3, and SeTr in FIG. 3), a separate configuration for each pixel area P is formed so that it is possible to determine whether the power supply wiring PL is disconnected during the defect inspection. As a result, repair becomes possible, thereby reducing the defect rate at the time of final productization.

Furthermore, in the step of forming the first electrode 150, the power wiring PL is a shorting bar connected to one end of each power wiring PL on the same material and the same layer constituting the first electrode 150 ( STB) is provided, whereby all of the power wirings PL are electrically connected to an equipotential state, and thus each of the power wirings PL has an effect of suppressing a voltage drop at each position thereof.

On the other hand, in the case of the organic light emitting diode 101 according to the first embodiment of the present invention, each power supply wiring PL has one end of each power supply wiring PL provided in the planarization layer 140 at one end. Although it is shown that the configuration is connected by a shorting bar STB provided on the planarization layer 140 through a wiring contact hole Lch that exposes Alternatively, one end of the power wiring PL and a configuration formed on the interlayer insulating film 123 in which these power wirings PL are located may be achieved.

11 is a diagram illustrating a planar structure of power wiring and a shorting bar of an organic light emitting diode according to a modified example of the first embodiment of the present invention, and FIG. 12 is an organic light emitting diode according to a modified example of the first embodiment of the present invention. It is a cross-sectional view of the section cut along the cutting line XII-XII in FIG. 11 as a diagram showing the cross-sectional structure of the power wiring and the shorting bar. At this time, the organic light emitting device according to the modified example of the first embodiment of the present invention differs only in the configuration in the non-display area NA where one end of the power supply wiring PL is located, and the other configurations are the same as those of the present invention described above. Since it is the same as that of the first embodiment of , the parts with differences will be mainly described.

In the organic electroluminescent device 102 according to the modified example of the first embodiment of the present invention, each pixel line is spaced apart from each other on the interlayer insulating film 123 in which the source and drain electrodes (not shown) of each thin film transistor (not shown) are formed. and the power wiring PL is formed separately. At this time, unlike the organic electroluminescent device (101 in FIG. 3) according to the first embodiment of the present invention, the source and drain electrodes (not shown) of each thin film transistor (not shown). It is characterized in that the planarization layer 140 having a drain contact hole (not shown) exposing the drain electrode (not shown) of the driving thin film transistor (not shown) is provided only for the upper display area DA.

At this time, since the planarization layer 140 is formed only for the display area DA, each of the power wirings PL is in the non-display area NA, and one end thereof is exposed to the outside of the planarization layer 140 . It is characterized by

In addition, in the display area DA over the planarization layer 140 , it contacts a drain electrode (not shown) of the driving thin film transistor (not shown) through the drain contact hole (not shown) and each sub-pixel area (not shown). ), a first electrode (not shown) is provided for each, and in the non-display area NA, the first electrode ( It is characterized in that a shorting bar (STB) made of the same material constituting the first electrode (not shown) and having the same stacked structure as the first electrode (not shown) and in direct contact with one end of each of the power wirings (PL) is provided.

On the other hand, in the organic electroluminescent device 102 according to the modification of the first embodiment of the present invention, the shorting bar STB is made of the same material constituting the first electrode (not shown) as an example, but the show The tinting bar STB does not necessarily have to be made of the material constituting the first electrode (not shown), and may be made of any conductive material or metal material as long as it is provided after the power wiring PL is formed.

In the organic light emitting diode 102 according to a modified example of the first embodiment of the present invention having such a configuration, the shorting bar STB is provided with each power supply wiring PL without a wiring contact hole exposing the end of each power supply wiring PL. ) is formed on one end of the interlayer insulating film 123 exposed between one end and each end, and when the source and drain electrodes (not shown) of the thin film transistor (not shown) are completed, each power wiring (PL) Since this is a separate form, it is possible to determine whether the power wiring (PL) is disconnected during a defect inspection, and furthermore, when the final product is completed, each power wiring (PL) is electrically connected by a shorting bar (STB) It has the advantage of being able to implement an equipotential by suppressing a voltage drop for each position of the wiring PL.

Other components are the same as those of the organic electroluminescent device 101 according to the first embodiment of the present invention described above, and thus will be omitted below.

13 is a plan view schematically showing only the power wiring in the organic electroluminescent device according to the second embodiment of the present invention, and FIG. 14 is a view of the organic electroluminescent device according to the second embodiment of the present invention. It is a cross-sectional view of the part cut along the line XIV-XIV.

The organic electroluminescent device 201 according to the second embodiment of the present invention connects one end of each power wiring PL compared to the organic electroluminescent device according to the first embodiment of the present invention (101 in FIG. 3). Only the structure of the shorting bar (STB) is different, and all other components are the same, so only the part with the difference will be described.

The most characteristic configuration of the organic electroluminescent device 201 according to the second embodiment of the present invention is each part of the display area DA in the non-display area NA where one end of the power wiring PL is located. On the interlayer insulating film 123 in which the source and drain electrodes (not shown) of each thin film transistor (not shown) provided in a pixel area (not shown) are formed, one end of each of the power wirings PL is spaced apart from each other, and the power supply That the shorting bar STB is provided with the same material constituting the wiring PL, and that one end of each power wiring PL and the shorting bar STB spaced apart from each other are provided on the planarization layer 140 That is, it is made of the same material as the first electrode (not shown) positioned thereon and is in contact with each other by each of the power wiring PL and the second connection pattern cp2 .

At this time, the planarization layer 140 has a wiring contact hole Lch exposing one end of each power supply wiring PL and one-to-one correspondence with one end of each power supply wiring PL with respect to the shorting bar STB. A shorting bar contact hole Bch is provided, and the second connection pattern cp2 has a one-to-one correspondence with one end of each power wiring PL, and the wiring contact hole Lch and the shorting bar contact hole Bch, respectively. ) through which the power supply wiring (PL) and the shorting bar (STB) are in contact at the same time.

On the other hand, in the organic electroluminescent device 201 according to the second embodiment of the present invention, the second connection pattern cp2 is made of the same material constituting the first electrode (not shown) as an example, but the The second connection pattern cp2 does not necessarily have to be made of a material constituting the first electrode (not shown), and may be made of any conductive material or metal material as long as it is provided after the power wiring PL is formed.

The organic light emitting diode 201 according to the second embodiment of the present invention having such a configuration is also a thin film transistor even though the shorting bar STB is formed on the interlayer insulating film 123, which is the same layer on which the power supply wiring PL is formed. In a state in which the source and drain electrodes (not shown) of (not shown) are completed, one end of each power wiring PL and the shorting bar STB are in contact with each other and are not electrically connected. It can be known whether the disconnection of each power wiring is defective, thereby making repair possible, and thus has the effect of reducing the defect rate at the time of final production.

In addition, when the organic light emitting device 201 according to the second embodiment of the present invention is completed as a final product, each power wiring PL is electrically connected by a shorting bar STB, so each of the power wiring PLs is It has the advantage of being able to implement equipotential by suppressing the voltage drop for each position.

On the other hand, the organic electroluminescent device 201 according to the second embodiment of the present invention having such a configuration is also shown in Fig. 15 ( A diagram showing a planar structure of a power supply wiring and a shorting bar of an organic light emitting device according to a modification of the second embodiment of the present invention) and FIG. 16 (power wiring of an organic light emitting device according to a modification of the second embodiment of the present invention) and a diagram showing the cross-sectional structure of the shorting bar (a cross-sectional view of the portion cut along the cutting line XVI-XVI in FIG. 15), the planarization layer 140 is formed only in the display area DA, and the non-display area ( NA), the second connection pattern cp2 made of the same material forming the first electrode (not shown) is one of the power wirings PL exposed to the outside of the planarization layer 140 . It may be configured to directly contact the end and other spaced apart shorting bars STB, and to form upper portions of the power wiring PL and the shorting bar STB, and a region where these two components are spaced apart.

The organic electroluminescent device 202 according to a modified example of the second embodiment of the present invention having such a configuration exposes a wiring contact hole Lch exposing an end of each power wiring PL and a shorting bar STB. An interlayer insulating film in which the second connection pattern cp2 is exposed between one end of each power supply wiring PL and the shorting bar STB and one end of each power supply wiring PL and the shorting bar STB without a tin bar contact hole When the source and drain electrodes (not shown) of the thin film transistor (not shown) are completed, the respective power wirings PL are separated. ), and furthermore, when the final product is completed, each power wiring (PL) is electrically connected to the shorting bar (STB) through the second connection pattern (cp2), so the power wiring (PL) It has the advantage of being able to implement an equipotential by suppressing the voltage drop for each position.

Other components are the same as those of the organic electroluminescent device (201 in FIG. 13) according to the second embodiment of the present invention described above, and thus will be omitted below.

The present invention is not limited to the above-described embodiments and modifications, and can be implemented with various modifications without departing from the spirit and spirit of the present invention.

101: organic electroluminescent device
Bch: wiring contact hole
DA: display area
NA: non-display area
PL: power wiring
STB: Shorting bar

Claims (11)

A display area including a pixel area including a plurality of sub-pixel areas defined by a plurality of gate lines extending in a first direction and a plurality of data lines extending in a second direction, and a non-display area disposed outside the display area a substrate comprising a region;
a plurality of thin film transistors provided in each of the plurality of sub-pixel regions;
a planarization layer formed on the substrate and covering the thin film transistor;
an organic light emitting diode connected to any one of the plurality of thin film transistors and comprising a first electrode disposed on the planarization layer, an organic light emitting layer, and a second electrode;
a plurality of power wirings disposed under the planarization layer and extending in the second direction between adjacent pixel regions;
and a shorting bar disposed on the planarization layer in the non-display area and electrically connected to the power wiring through a contact hole formed in the planarization layer.
delete The method of claim 1,
The shorting bar is an organic electroluminescent device made of the same material as the first electrode.
A ratio between a display area having a plurality of pixel areas and a display area having a plurality of pixel areas including a plurality of sub-pixel areas defined by a plurality of gate lines extending in the first direction and a plurality of data lines extending in the second direction a substrate on which a display area is defined;
a gate electrode disposed on the substrate, a gate insulating layer covering the gate electrode, a semiconductor layer disposed on the gate insulating layer, and a semiconductor layer disposed on the gate insulating layer provided in each of the plurality of subpixel regions a plurality of thin film transistors including an interlayer insulating film covering the interlayer insulating film, and a source electrode and a drain electrode disposed on the interlayer insulating film;
a power wiring provided along the second direction between adjacent pixel regions on the interlayer insulating layer;
a shorting bar disposed in the non-display area on the interlayer insulating layer and spaced apart from the power wiring by a predetermined distance;
a planarization layer formed in the display area and the non-display area to cover the plurality of thin film transistors, the power wiring, and the shorting bar;
an organic light emitting diode formed on the planarization layer in each of the plurality of subpixel regions and including a first electrode, an organic light emitting layer, and a second electrode; and
and a connection pattern formed on the planarization layer of the non-display area and electrically connecting the power wiring and the shorting bar through a contact hole formed in the planarization layer. delete 5. The method of claim 4,
The first electrode is made of the same material as the connection pattern and is disposed on the planarization layer.
7. The method of any one of claims 1, 3, 4 and 6,
A first auxiliary line extending in the first direction is provided at the boundary of the sub-pixel area, and a second auxiliary line extending in the second direction and spaced apart from the gate line is provided at the boundary of the pixel area. The thin film transistor includes a switching thin film transistor connected to the data wiring and the gate wiring, a driving thin film transistor connected to the switching thin film transistor and the power supply wiring, and a sensing thin film transistor connected to the driving thin film transistor and the second auxiliary wiring. device.
delete A display area including a pixel area including a plurality of sub-pixel areas defined by a plurality of gate lines extending in a first direction and a plurality of data lines extending in a second direction, and a non-display area disposed outside the display area providing a substrate comprising a region;
forming a thin film transistor in each of the plurality of sub-pixel regions;
forming an organic light emitting diode including a first electrode, an organic light emitting layer, and a second electrode in each of the plurality of sub-pixel regions on the substrate on which the thin film transistor is formed;
forming a plurality of power wirings extending in a second direction between the pixel regions of the display area and forming a shorting bar separated from the power wirings in the non-display area;
checking whether the power wiring is defective; and
and connecting the power wiring and the shorting bar.
10. The method of claim 9,
The step of forming the power wiring and the shorting bar includes forming a planarization layer to cover the power wiring and forming the shorting bar on the planarization layer,
The step of connecting the power wiring and the shorting bar includes connecting the power wiring and the shorting bar through a contact hole formed in the planarization layer.
The method of claim 9, wherein the forming of the power wiring and the shorting bar and connecting the power wiring and the shorting bar include:
forming the power wiring and the shorting bar in the display area and the non-display area on an interlayer insulating layer, respectively;
forming a planarization layer in the display area and the non-display area; and
and forming a connection pattern on the planarization layer to connect the power wiring and the shorting bar through a contact hole formed in the planarization layer.

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