KR102639651B1 - Organic Light Emitting Display device having a dummy pattern for repair process - Google Patents

Abstract

The present invention relates to an organic light emitting display device including a dummy pattern for a repair process, and improves the reliability of the repair process by preventing absorption and refraction of the laser used in the repair process by insulating films stacked on the dummy pattern. It is a technical feature.

Description

Organic light emitting display device having a dummy pattern for repair process}

The present invention relates to an organic light emitting display device in which a repair process is performed using a dummy pattern.

In general, electronic devices such as monitors, TVs, laptops, digital cameras, etc. include display devices for displaying images. For example, the display device may include a liquid crystal display device and an organic light emitting display device.

The organic light emitting display device may be a transparent display device. For example, each pixel area of the organic light emitting display device may include a light emitting area and a transmission area. A light emitting structure and components for controlling the light emitting structure may be located within the light emitting area. The transmission area may transmit external light.

The light emitting area can display various colors to implement images. For example, a blue light-emitting structure representing blue, a red light-emitting structure representing red, a green light-emitting structure representing green, and a white light-emitting structure representing white may be located in the light-emitting region. Each light-emitting structure may include a lower light-emitting electrode, an organic light-emitting layer, and an upper light-emitting electrode stacked in order.

In the organic light emitting display device, defects in some light emitting structures may occur due to foreign substances generated during the formation process. The forming process of the organic light emitting display device may include a repair process to minimize image quality degradation caused by defective light emitting structures. For example, the repair process of the organic light emitting display device may include a process of connecting a defective light emitting structure to a light emitting structure showing the same color in an adjacent pixel area using a dummy pattern and a repair electrode.

The process of connecting the light emitting structures may include a laser welding process. For example, the repair process of the organic light emitting display device may include a process of connecting the repair electrodes and the dummy pattern by irradiating a laser to an area where the repair electrodes of the corresponding light emitting structures overlap with the dummy pattern.

However, since multiple insulating films are stacked on the dummy pattern and the repair electrode, in the organic light emitting display device, the laser irradiated for the repair process is absorbed and/or refracted by the stacked insulating films, causing damage to adjacent insulating films. There is a problem. In addition, it is possible to prevent absorption and refraction of the laser by the insulating films by irradiating the laser from the direction of the lower substrate, but this requires turning the organic light emitting display device upside down, which can cause physical damage and increase process time. There is.

The problem to be solved by the present invention is to provide an organic light emitting display device that can prevent damage to adjacent insulating films caused by a laser irradiated for a repair process.

Another problem to be solved by the present invention is to provide an organic light emitting display device that can perform a repair process without physical damage and prevent absorption and refraction of laser by insulating films.

The problems to be solved by the present invention are not limited to the problems mentioned above. Problems not mentioned herein will become clear to those skilled in the art from the description below.

An organic light emitting display device according to the technical idea of the present invention to achieve the above problem includes a dummy pattern located on a lower substrate. A lower protective film is located on the lower substrate. The lower protective film covers the dummy pattern. A repair electrode is located on the lower protective film. The repair electrode includes an area that overlaps the dummy pattern. An upper overcoat layer is located on the repair electrode. The upper overcoat layer includes an upper through hole that overlaps the dummy pattern. A bank insulating film is located on the upper overcoat layer. The bank insulating film includes a bank through hole that overlaps the upper through hole. A capping insulating film is located in the upper through hole on the repair electrode.

The capping insulating film may be in direct contact with the repair electrode.

The capping insulating film may extend on the side of the upper overcoat layer overlapping the dummy pattern.

The thickness of the capping insulating film on the repair electrode may be the same as the thickness of the capping insulating film on the side of the top overcoat layer.

The capping insulating layer may include the same material as the bank insulating layer.

A thin film transistor may be located between the lower substrate and the lower protective film. The thin film transistor may be spaced apart from the dummy pattern. The dummy pattern may include the same material as one of the conductive layers of the thin film transistor.

A lower overcoat layer may be positioned between the lower substrate and the repair electrode. The lower overcoat layer may include a lower through hole that overlaps the upper through hole. The repair electrode may extend inside the lower through hole along the side of the lower overcoat layer.

The size of the upper through hole may be smaller than the size of the lower through hole.

An organic light emitting display device according to the technical idea of the present invention to achieve the above-mentioned other problems includes a lower substrate. The lower substrate includes a light emitting area and a transmissive area. A repair electrode is located on the transparent area of the lower substrate. A lower protective film is located between the lower substrate and the repair electrode. An upper overcoat layer is located on the repair electrode. The upper overcoat layer includes an upper through hole exposing a portion of the repair electrode. A bank insulating film is located on the upper overcoat layer. The bank insulating film includes a bank through hole that overlaps the upper through hole. A dummy pattern is located between the lower substrate and the lower protective film. The dummy pattern overlaps the upper through hole. The repair electrode exposed by the upper through hole is covered with a capping insulating film.

The horizontal length of some areas of the repair electrode may be smaller than the horizontal length of the upper surface of the dummy pattern facing the repair electrode.

The capping insulating film may extend between the repair electrode and the upper overcoat layer.

The capping insulating film may cover the repair electrode.

A light emitting structure may be located on the light emitting area of the lower substrate. The light emitting structure may include a lower light emitting electrode, an organic light emitting layer, and an upper light emitting electrode stacked in that order. The organic light emitting layer and the upper light emitting electrode may extend inside the upper through hole through the bank through hole.

The capping insulating film may be in direct contact with the organic light-emitting layer.

The upper overcoat layer may further include a contact hole that is spaced apart from the upper through hole and overlaps the repair electrode. The lower light emitting electrode may be connected to the repair electrode through a contact hole.

In an organic light emitting display device according to the technical idea of the present invention, a laser for a repair process is irradiated from the direction of the upper substrate, but absorption and refraction of the laser by insulating films can be prevented. Accordingly, in the organic light emitting display device according to the technical idea of the present invention, damage to an adjacent insulating film caused by a laser irradiated for a repair process can be prevented. Therefore, in the organic light emitting display device according to the technical idea of the present invention, the repair process time can be shortened and reliability can be improved.

1 is a diagram schematically showing the layout of an organic light emitting display device according to an embodiment of the present invention.
FIG. 2A is a diagram schematically showing a cross section of an organic light emitting display device according to an embodiment of the present invention.
FIG. 2B is a diagram showing a cross section taken along line II' of FIG. 1.
3 to 5 are diagrams showing an organic light emitting display device according to another embodiment of the present invention, respectively.

Details regarding the above-mentioned purpose, technical configuration, and effects thereof of the present invention will be more clearly understood through the following detailed description with reference to the drawings showing embodiments of the present invention. Here, since the embodiments of the present invention are provided so that the technical idea of the present invention can be sufficiently conveyed to those skilled in the art, the present invention may be embodied in other forms so as not to be limited to the embodiments described below.

In addition, parts indicated with the same reference numerals throughout the specification refer to the same components, and the length and thickness of a layer or region in the drawings may be exaggerated for convenience. Additionally, when a first component is described as being “on” a second component, it does not only mean that the first component is located above and in direct contact with the second component, but also that the first component and the It also includes cases where a third component is located between second components.

Here, the terms first, second, etc. are used to describe various components and are used for the purpose of distinguishing one component from other components. However, without departing from the technical spirit of the present invention, the first component and the second component may be arbitrarily named according to the convenience of those skilled in the art.

The terms used in the specification of the present invention are only used to describe specific embodiments and are not intended to limit the present invention. For example, an element expressed in the singular includes plural elements unless the context clearly indicates only the singular. In addition, in the specification of the present invention, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, but are intended to indicate the presence of one or It should be understood that this does not preclude the existence or addition of other features, numbers, steps, operations, components, parts, or combinations thereof.

Additionally, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by a person of ordinary skill in the technical field to which the present invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related technology, and unless clearly defined in the specification of the present invention, they should not be taken in an idealistic or excessively formal sense. It is not interpreted.

(Example)

1 is a diagram schematically showing the layout of an organic light emitting display device according to an embodiment of the present invention. FIG. 2A is a diagram schematically showing a cross section of an organic light emitting display device according to an embodiment of the present invention. FIG. 2B is a diagram showing a cross section taken along line II' of FIG. 1.

Referring to FIGS. 1, 2A, and 2B, the organic light emitting display device according to an embodiment of the present invention includes a lower substrate 100, a lower protective film 130, an auxiliary electrode 410, a repair electrode 430, and a light emitting structure 500. ) and a capping insulating film 600.

The lower substrate 100 may support the light emitting structure 500. The lower substrate 100 may include an insulating material. For example, the lower substrate 100 may include glass or plastic.

The lower substrate 100 may include pixel areas. Each pixel area may include an emission area (EA) and a transmission area (TA). The light emitting area (EA) may represent a color for implementing an image. A plurality of light emitting structures 500 may be located within the light emitting area EA. For example, a blue light-emitting structure representing blue, a red light-emitting structure representing red, a green light-emitting structure representing green, and a white light-emitting structure representing white may be located in the light-emitting area EA. The transmission area (TA) may be transparent.

A gate line (GL), data lines (DL1-DL4), a sensing line (SL), a reference voltage line (Vref), and a power supply voltage line (VDD) may be located on the lower substrate 100. The gate line GL may extend in one direction. The data lines DL1-DL4 may intersect the gate line GL. The data lines DL1-DL4 may transmit data signals to the light emitting structure 500 located within the light emitting area EA. For example, an organic light emitting display device according to an embodiment of the present invention may include four data lines DL1-DL4. The sensing line (SL) may be parallel to the gate line (GL). The reference voltage line (Vref) and the power voltage line (VDD) may be parallel to the data lines (DL1-DL4).

The gate line (GL), the data lines (DL1-DL4), the sensing line (SL), the reference voltage line (Vref), and the power voltage line (VDD) are sub-light-emitting areas within the light-emitting area (EA). can be defined. For example, a circuit unit for controlling one of the light emitting structures 500 may be located within each sub light emitting area. In the organic light emitting display device according to an embodiment of the present invention, each light emitting area (EA) includes the gate line (GL), the data lines (DL1-DL4), the sensing line (SL), the reference voltage line (Vref), and It may include four sub-light-emitting areas partitioned by the power supply voltage line (VDD). For example, a selection thin-film transistor (TR1), a driving thin-film transistor (TR2), a sensing thin-film transistor (TR3), and a storage capacitor (Cst) may be located in each sub-light-emitting area.

The selection thin film transistor TR1 may turn on/off the driving thin film transistor TR2 according to a gate signal applied through the gate line GL. The driving thin film transistor TR2 may supply a driving current to the light emitting structure 500 according to the signal of the selection thin film transistor TR1 and the data signal applied through the corresponding data lines DL1-DL4. The degree of deterioration of each driving thin film transistor (TR2) and/or each light emitting structure 500 may be sensed by the corresponding sensing thin film transistor (TR3). The storage capacitor Cst may maintain the signal of the selection thin film transistor TR1 applied to the driving thin film transistor TR2 for a certain period of time.

The structure of the selection thin film transistor TR1 and the sensing thin film transistor TR3 may be the same as that of the driving thin film transistor TR2. For example, the driving thin film transistor TR2 may include a semiconductor pattern 210, a gate insulating film 220, a gate electrode 230, an interlayer insulating film 240, a source electrode 250, and a drain electrode 260. You can.

The semiconductor pattern 210 may be located close to the lower substrate 100 . The semiconductor pattern 210 may include a semiconductor material. For example, the semiconductor pattern 210 may include amorphous silicon or polycrystalline silicon. The semiconductor pattern 210 may include an oxide semiconductor material. For example, the semiconductor pattern 210 may include IGZO.

The semiconductor pattern 210 may include a source region, a drain region, and a channel region. The channel region may be located between the source region and the drain region. The conductivity of the channel region may be lower than the conductivity of the source region and the drain region. For example, the source region and the drain region may include conductive impurities.

The organic light emitting display device according to an embodiment of the present invention is described in which the semiconductor pattern 210 of each thin film transistor TR1, TR2, and TR3 is in direct contact with the lower substrate 100. However, the organic light emitting display device according to another embodiment of the present invention may further include a buffer insulating film positioned between the lower substrate 100 and the thin film transistors TR1, TR2, and TR3. The buffer insulating film may extend outward from the semiconductor pattern 210 . For example, the buffer insulating film may cover the entire surface of the lower substrate 100. The buffer insulating film may include an insulating material. For example, the buffer insulating film may include silicon oxide.

The gate insulating layer 220 may be located on the semiconductor pattern 210 . The gate insulating layer 220 may include an insulating material. For example, the gate insulating layer 220 may include silicon oxide and/or silicon nitride. The gate insulating layer 220 may have a multi-layer structure. The gate insulating layer 220 may include a high-K material. For example, the gate insulating layer 220 may include hafnium oxide (HfO) or titanium oxide (TiO).

The gate electrode 230 may be located on the gate insulating film 220. The gate electrode 230 may overlap the channel region of the semiconductor pattern 210 . The gate electrode 230 may be insulated from the semiconductor pattern 210 by the gate insulating film 220. For example, the gate electrode 230 may include a side surface vertically aligned with the side surface of the gate insulating film 220 . A side surface of the gate insulating layer 220 may be continuous with a side surface of the gate electrode 230.

The gate electrode 230 may include a conductive material. For example, the gate electrode 230 may include metal such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). The gate electrode 230 may have a multi-layer structure. The gate line GL may include the same material as the gate electrode 230. The gate electrode 230 may be located on the same layer as the gate line GL. For example, the structure of the gate line GL may be the same as that of the gate electrode 230.

The interlayer insulating film 240 may be positioned on the semiconductor pattern 210 and the gate electrode 230. The interlayer insulating film 240 may extend outward from the semiconductor pattern 210 . For example, on the outside of the semiconductor pattern 210, the interlayer insulating layer 240 may directly contact the buffer insulating layer 110. The interlayer insulating film 240 may include an insulating material. For example, the interlayer insulating film 240 may include silicon oxide.

The source electrode 250 and the drain electrode 260 may be located on the interlayer insulating film 240. The source electrode 250 may be electrically connected to the source region of the semiconductor pattern 210. The drain electrode 260 may be electrically connected to the drain region of the semiconductor pattern 210. For example, the interlayer insulating film 240 may include a first interlayer contact hole 241h exposing the source region of the semiconductor pattern 210 and an interlayer contact hole 242h exposing the drain region. . The drain electrode 260 may be spaced apart from the source electrode 250.

The source electrode 250 and the drain electrode 260 may include a conductive material. For example, the source electrode 250 and the drain electrode 260 are metals such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), and tungsten (W). may include. The drain electrode 260 may include the same material as the source electrode 250. The source electrode 250 may have a multi-layer structure. The structure of the drain electrode 260 may be the same as that of the source electrode 250. For example, the drain electrode 260 may have a multi-layer structure.

The data lines DL1-DL4, the reference voltage line Vref, and the power voltage line PL may include the same material as the source electrode 250 and the drain electrode 260. The data lines DL1-DL4, the reference voltage line Vref, and the power voltage line PL may be located on the same layer as the source electrode 250 and the drain electrode 260. For example, the data lines DL1-DL4, the reference voltage line Vref, and the power voltage line PL may be located on the interlayer insulating layer 240. The structure of the data line (DL), the structure of the reference voltage line (Vref), and the structure of the power voltage line (PL) may be the same as the structure of the source electrode 250 and the structure of the drain electrode 260. there is. For example, the data line DL and the power voltage line PL may have a multi-layer structure.

The organic light emitting display device according to an embodiment of the present invention has an interlayer insulating film 240 positioned between the gate electrode 230, the source electrode 250, and the drain electrode 260 of each thin film transistor (TR1, TR2, TR3). It is explained as However, in the organic light emitting display device according to another embodiment of the present invention, the thin film transistors TR1, TR2, and TR3 located in each light emitting area EA have a gate electrode 230, a source electrode 250, and a drain electrode, respectively. It may include a gate insulating film 220 located between (260).

The storage capacitor Cst may be spaced apart from the thin film transistors TR1, TR2, and TR3. The storage capacitor Cst may be electrically connected to the thin film transistors TR1, TR2, and TR3. For example, the storage capacitor Cst may include a lower capacitor electrode 310, a capacitor insulating film 320, and an upper capacitor electrode 330 stacked in that order.

The lower capacitor electrode 310 and the upper capacitor electrode 330 may include a conductive material. For example, the lower capacitor electrode 310 may include the same material as the gate electrode 230. The structure of the lower capacitor electrode 310 may be the same as that of the gate electrode 230. The upper capacitor electrode 330 may include the same material as the source electrode 250 and the drain electrode 260. The structure of the upper capacitor electrode 330 may be the same as the structure of the source electrode 250 and the structure of the drain electrode 260. For example, the upper capacitor electrode 330 may be connected to the drain electrode 260 of the driving thin film transistor TR2. The upper capacitor electrode 330 may have a multi-layer structure.

The capacitor insulating film 320 may include an insulating material. For example, the capacitor insulating film 320 may include silicon oxide. The capacitor insulating film 320 may include the same material as the interlayer insulating film 240. For example, the capacitor insulating film 320 may be connected to the interlayer insulating film 240.

The organic light emitting display device according to an embodiment of the present invention may further include a lower insulating film 301 located between the lower substrate 100 and the storage capacitor (Cst). The side surface of the lower insulating film 301 may be continuous with the side surface of the lower capacitor electrode 310. For example, the lower insulating layer 301 may include the same material as the gate insulating layer 220.

A dummy pattern (WL) may be located on the lower substrate 100. For example, the dummy pattern WL may extend parallel to the data lines DL1-DL4. The dummy pattern WL may extend between the emission area EA and the transmission area TA. For example, the dummy pattern WL may include an area that overlaps the transparent area TA of the lower substrate 100 .

The dummy pattern WL may include a conductive material. The dummy pattern WL may include the same material as one of the conductive layers of the thin film transistors TR1, TR2, and TR3. For example, the dummy pattern WL may include the same material as the source electrode 250 and the drain electrode 260. The dummy pattern (WL) may include the same material as the data lines (DL1-DL4).

The organic light emitting display device according to an embodiment of the present invention may further include a lower protective film 130 located on the thin film transistors TR1, TR2, and TR3, a storage capacitor Cst, and a dummy pattern WL. The lower protective film 130 can prevent external moisture, hydrogen, etc. from penetrating into the thin film transistors TR1, TR2, and TR3. The thin film transistors TR1, TR2, and TR3, the storage capacitor Cst, and the dummy pattern WL may be covered by the lower protective film 130. The lower protective film 130 may include an insulating material. For example, the lower protective layer 130 may include silicon oxide and/or silicon nitride.

The auxiliary electrode 410 may be located on the lower protective film 130. The auxiliary electrode 410 may be located within the light emitting area EA. For example, the auxiliary electrode 410 may be located on the thin film transistors TR1, TR2, and TR3. The auxiliary electrode 410 may include a conductive material. For example, the auxiliary electrode 410 may include metal such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), tungsten (W), etc. The auxiliary electrode 410 may have a multi-layer structure. For example, the auxiliary electrode 410 may include a lower auxiliary electrode 411 and an upper auxiliary electrode 412 located on the lower auxiliary electrode 411.

The organic light emitting display device according to an embodiment of the present invention may further include an auxiliary clad layer 415 located on the auxiliary electrode 410. The auxiliary clad layer 415 can prevent damage to the auxiliary electrode 410 due to subsequent processes. For example, the auxiliary electrode 410 may be covered by the auxiliary clad layer 415. The auxiliary clad layer 415 may include a conductive material. The auxiliary clad layer 415 may include a material with low reactivity. For example, the auxiliary clad layer 415 may include a transparent conductive material such as ITO.

The organic light emitting display device according to an embodiment of the present invention may further include a lower overcoat layer 140 located between the lower protective film 130 and the auxiliary electrode 410. The lower overcoat layer 140 can remove steps caused by the thin film transistors TR1, TR2, and TR3 and the storage capacitor Cst. For example, the upper surface of the lower overcoat layer 140 facing the lower substrate 100 may be a flat surface. The upper surface of the lower overcoat layer 140 may be parallel to the surface of the lower substrate 100. The lower overcoat layer 140 may include an insulating material. For example, the lower overcoat layer 140 may include an organic insulating material.

The lower overcoat layer 140 may include a lower through hole 142h. The lower through hole 142h may be located on the dummy pattern WL. For example, the dummy pattern WL located on the transmission area TA of the lower substrate 100 may overlap the lower through hole 142h of the lower overcoat layer 140.

The repair electrode 430 may be located between the light emitting area (EA) and the transmission area (TA) of the lower substrate 100. For example, the repair electrode 430 may include an area that overlaps the dummy pattern WL. The repair electrode 430 may be located on the lower overcoat layer 140. The repair electrode 430 may extend into the lower through hole 142h. Within the lower through hole 142h, the repair electrode 430 may directly contact the lower protective film 130. For example, the dummy pattern WL and the repair electrode 430 may be insulated by the lower protective layer 130 . The horizontal length of the partial area of the repair electrode 430 that overlaps the dummy pattern (WL) may be smaller than the horizontal length of the upper surface of the dummy pattern (WL) facing the repair electrode 430.

The repair electrode 430 may include a conductive material. For example, the repair electrode 430 may include metal such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), tungsten (W), etc. The structure of the repair electrode 430 may be the same as that of the auxiliary electrode 410. For example, the repair electrode 430 may include a lower repair electrode 431 and an upper repair electrode 432 located on the lower repair electrode 431.

The organic light emitting display device according to an embodiment of the present invention may further include a repair clad layer 435 located on the repair electrode 430. The repair clad layer 435 may cover the repair electrode 430. The repair clad layer 435 may include a conductive material. The repair clad layer 435 may include the same material as the auxiliary clad layer 415. For example, the repair clad layer 435 may include a transparent conductive material such as ITO.

The light emitting structure 500 may implement a specific color. The light emitting structure 500 may be located within the light emitting area EA. For example, the light emitting structure 500 may be located on the auxiliary electrode 410. The light-emitting structure 500 may include a lower light-emitting electrode 510, a light-emitting layer 520, and an upper light-emitting electrode 530 stacked in that order.

The organic light emitting display device according to an embodiment of the present invention may further include an upper overcoat layer 150 located between the auxiliary electrode 410 and the light emitting structure 500. The upper overcoat layer 150 can remove steps caused by the auxiliary electrode 410. For example, the upper surface of the upper overcoat layer 150 facing the light emitting structure 500 may be a flat surface. The upper surface of the upper overcoat layer 150 may be parallel to the upper surface of the lower overcoat layer 140. The upper overcoat layer 150 may include an insulating material. For example, the upper overcoat layer 150 may include an organic insulating material. The upper overcoat layer 150 may include a material different from that of the lower overcoat layer 140.

The upper overcoat layer 150 may extend onto the transmission area TA of the lower substrate 100. The upper overcoat layer 150 may include an upper through hole 154h that overlaps a portion of the dummy pattern WL. The upper through hole 154h may overlap the lower through hole 142h. The upper through hole 154h may expose a partial area of the repair electrode 430 located within the lower through hole 142h. For example, the size of the upper through hole 154h may be smaller than the size of the lower through hole 142h. The upper overcoat layer 150 may extend onto the repair electrode 430 covering the side surface of the lower overcoat layer 140.

The light emitting structure 500 can be controlled by the corresponding thin film transistors TR1, TR2, and TR3. For example, the lower light emitting electrode 510 of the light emitting structure 500 may be electrically connected to the drain electrode 260 of the driving thin film transistor TR2. For example, the lower protective film 130, the lower overcoat layer 140, and the upper overcoat layer 150 are each the upper capacitor electrode connected to the drain electrode 260 of the corresponding driving thin film transistor TR2. It may include electrode contact holes 131h, 141h, and 151h exposing some areas of 330 .

The organic light emitting display device according to an embodiment of the present invention may further include a connection electrode 420 located between the lower overcoat layer 140 and the upper overcoat layer 150. The connection electrode 420 may electrically connect the lower light emitting electrode 510 of the light emitting structure 500 to the drain electrode 260 of the driving thin film transistor TR2. For example, the lower light emitting electrode 510 may be connected to the connection electrode 420 through the electrode contact hole 151h of the upper overcoat layer 150. The connection electrode 420 is connected to the drain electrode ( It may be connected to the upper capacitor electrode 330 connected to 260). The connection electrode 420 may include a conductive material. For example, the connection electrode 420 may include a metal such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), or tungsten (W). The connection electrode 420 may include the same material as the auxiliary electrode 410. The connection electrode 420 may have a multi-layer structure. For example, the structure of the connection electrode 420 may be the same as that of the auxiliary electrode 410. The connection electrode 420 may include a lower connection electrode 421 and an upper connection electrode 422 located on the lower connection electrode 421.

The organic light emitting display device according to an embodiment of the present invention may further include a connection clad layer 425 located between the connection electrode 420 and the upper overcoat layer 150. The connection clad layer 425 may cover the connection electrode 420. The connection clad layer 425 may include a conductive material. For example, the connecting clad layer 425 may include the same material as the auxiliary clad layer 410. The connection clad layer 425 may include a transparent conductive material such as ITO.

The lower light emitting electrode 510 may include a conductive material. The lower light emitting electrode 510 may include a material with high reflectivity. For example, the lower light emitting electrode 510 may include metal such as aluminum (Al) and silver (Ag). The lower light emitting electrode 510 may have a multi-layer structure. For example, the lower light emitting electrode 510 may have a structure in which a reflective electrode containing a material with high reflectivity is positioned between transparent electrodes containing a transparent conductive material such as ITO.

The lower light emitting electrode 510 may include an area located on the transmission area (TA) of the lower substrate 100 . For example, the lower light emitting electrode 510 may be electrically connected to the repair electrode 430 on the transmission area (TA). The upper overcoat layer 150 may further include a repair contact hole 153h exposing a partial area of the repair electrode 430. The repair contact hole 153h may be spaced apart from the upper through hole 154h. The lower light emitting electrode 510 may overlap the repair contact hole 153h. The lower light emitting electrode 510 may be connected to the repair electrode 430 through the repair contact hole 153h.

The organic light-emitting layer 520 may generate light with a luminance corresponding to the voltage difference between the lower light-emitting electrode 510 and the upper light-emitting electrode 530. For example, the organic emission layer 520 may include an emitting material layer (EML) containing an organic emission material. The organic emission layer 520 may have a multi-layer structure for high luminous efficiency. For example, the organic light-emitting layer 520 includes a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer. It may further include at least one of EIL).

The upper light emitting electrode 530 may include a conductive material. The upper light emitting electrode 530 may include a material different from that of the lower light emitting electrode 510. For example, the upper light emitting electrode 530 may be a transparent electrode. Accordingly, in the organic light emitting display device according to an embodiment of the present invention, light generated by the organic light emitting layer 520 may be emitted through the upper light emitting electrode 530.

The organic light emitting display device according to an embodiment of the present invention may further include a bank insulating film 160 to insulate between adjacent light emitting structures 500. For example, the bank insulating film 160 may cover the edge of the lower light emitting electrode 510 of each light emitting structure 500. The light emitting layer 520 and the upper light emitting electrode 530 may be stacked on the surface of the lower light emitting electrode 510 exposed by the bank insulating film 160. The bank insulating film 160 may include an insulating material. For example, the bank insulating film 160 may include an organic insulating material such as bensocyclobutene (BCB), polyimide, or photo-acryl. The lower overcoat layer 140 and the upper overcoat layer 150 may include a material different from the bank insulating layer 160.

The bank insulating layer 160 may extend onto the transmission area (TA) of the lower substrate 100 . The bank insulating film 160 may include a bank through hole 160h that overlaps the upper through hole 154h. Accordingly, in the organic light emitting display device according to an embodiment of the present invention, a partial area of the repair electrode 430 that overlaps the dummy pattern (WL) may be exposed by the upper overcoat layer 150 and the bank insulating layer 160. . Therefore, in the organic light emitting display device according to an embodiment of the present invention, the dummy pattern (WL) and the repair electrode 430 are welded by irradiating a laser through the upper through hole 154h and the bank through hole 160h, thereby welding the adjacent insulating film. The repair process can be performed without damage.

The organic emission layer 520 and the upper emission electrode 530 may extend onto the bank insulating film 160 . The upper light emitting electrode 530 may be electrically connected to the auxiliary electrode 410. Accordingly, the organic light emitting display device according to an embodiment of the present invention can prevent luminance unevenness due to a voltage drop of the upper light emitting electrode 530.

The organic light emitting display device according to an embodiment of the present invention may further include a partition wall 700 to provide a space where the upper light emitting electrode 530 can be electrically connected to the auxiliary electrode 410. For example, some areas of the light emitting layer 520 may be separated from other areas by the partition wall 700. The upper light-emitting electrode 530 may be electrically connected to the auxiliary electrode 410 through a space between regions of the light-emitting layer 520 separated by the partition 700. The vertical length of the partition 700 may be greater than the vertical thickness of the bank insulating layer 160. For example, the partition wall 700 may include a lower partition wall 710 and an upper partition wall 720 located on the lower partition wall 710. The lower partition 710 and the upper partition 720 may include an insulating material. For example, the lower partition 710 may include the same material as the bank insulating layer 160. The upper partition wall 720 may include a material different from that of the lower partition wall 610. For example, the upper partition 720 may include silicon oxide and/or silicon nitride.

The organic light emitting display device according to an embodiment of the present invention may further include an intermediate electrode 550 located between the auxiliary electrode 410 and the bank insulating layer 160. The intermediate electrode 550 may be connected to the auxiliary electrode 410. For example, the upper overcoat layer 150 may include a through hole 152h exposing a partial area of the auxiliary electrode 410. The partition 700 may overlap the intermediate electrode 550. For example, the light emitting layer 520 may expose a partial area of the intermediate electrode 550 by the partition 700. The bank insulating film 160 may cover an edge of the intermediate electrode 550. The partition wall 700 may be located between the bank insulating films 160 . The upper light emitting electrode 530 may contact a portion of the middle electrode 550 where the light emitting layer 520 is not formed by the partition wall 700. The upper light emitting electrode 530 may be electrically connected to the auxiliary electrode 410 through the middle electrode 550. The intermediate electrode 550 may include a conductive material. For example, the middle electrode 550 may include the same material as the lower light emitting electrode 510. The intermediate electrode 550 may have a multi-layer structure. For example, the structure of the middle electrode 550 may be the same as that of the lower light emitting electrode 510.

The organic emission layer 520 and the upper emission electrode 530 may extend onto the transmission area TA of the lower substrate 100. For example, the organic light-emitting layer 520 and the upper light-emitting electrode 530 overlap the dummy pattern WL through the bank through-hole 160h and the upper through-hole 154h. ) can be extended onto some areas of.

The capping insulating film 600 may be located in the upper through hole 154h on the repair electrode 430. A partial area of the repair electrode 430 exposed by the bank through-hole 160h and the upper through-hole 154h may be covered by the capping insulating film 600. The organic emission layer 520 and the upper emission electrode 530 may extend onto the capping insulating film 600 . For example, the capping insulating layer 600 may directly contact the repair electrode 430 and the organic light emitting layer 520.

The capping insulating film 600 may include an insulating material. Accordingly, in the organic light emitting display device according to an embodiment of the present invention, the repair electrode 430 may be insulated from the upper light emitting electrode 530 by the capping insulating film 600 and the organic light emitting layer 520. The capping insulating layer 600 may include a material different from the upper overcoat layer 150 and the bank insulating layer 160. For example, the capping insulating film 600 may include an inorganic insulating material. The capping insulating film 600 may include silicon oxide, silicon nitride, and/or silicon oxynitride. The capping insulating film 600 may have a multi-layer structure. Accordingly, the organic light emitting display repair electrode 430 according to an embodiment of the present invention can be prevented from being shorted with the upper light emitting electrode 530.

The capping insulating layer 600 may extend along the side of the upper overcoat layer 150 overlapping the dummy pattern WL. For example, the capping insulating layer 600 may extend between the upper overcoat layer 150 and the bank insulating layer 160. The capping insulating film 600 may have a liner shape. For example, the thickness of the capping insulating film 600 on the repair electrode 430 may be the same as the thickness of the capping insulating film 600 on the side of the upper overcoat layer 150.

The capping insulating film 600 may be located only on the transmission area TA of the lower substrate 100. For example, the capping insulating film 600 may not extend onto the light emitting area EA of the lower substrate 100. Accordingly, in the organic light emitting display device according to an embodiment of the present invention, the efficiency of the light emitting structure 500 may not be reduced by the capping insulating film 600.

The organic light emitting display device according to an embodiment of the present invention may further include an upper substrate 800 facing the lower substrate 100. The upper substrate 800 may overlap the light emitting area (EA) and the transmission area (TA) of the lower substrate 100. For example, the upper substrate 800 may be positioned on the light emitting structure 500 and the repair electrode 430. The upper substrate 800 may include an insulating material. The upper substrate 800 may include a transparent material. For example, the upper substrate 800 may include glass or plastic.

In the organic light emitting display device according to an embodiment of the present invention, the light emitting structure 500 in each sub light emitting area can implement the same color. For example, the light emitting structure 500 of each sub light emitting area may include a white light emitting layer 520. The organic light emitting display device according to an embodiment of the present invention may further include a black matrix 810 and a color filter 820 located on the upper substrate 800. Accordingly, in the organic light emitting display device according to an embodiment of the present invention, each sub light emitting area where the light emitting structure 500 implementing the same color is located may display different colors.

The organic light emitting display device according to an embodiment of the present invention may further include a filler 900 that fills the space between the lower substrate 100 and the upper substrate 800. The filler 900 can prevent damage to the light emitting structure 500 due to external shock. For example, the filler 900 may extend between the light emitting structure 500, the black matrix 810, and the color filter 820.

The organic light emitting display device according to an embodiment of the present invention is described in that the light emitting structure 500 is in direct contact with the filler 900. However, the organic light emitting display device according to another embodiment of the present invention may further include an upper protective film positioned between the light emitting structure 500 and the filler 900. The upper protective film can prevent external moisture, etc. from penetrating into the light emitting structure 500. The upper protective film may include a multi-layer structure. For example, the upper protective layer may have a structure in which an inorganic layer containing an inorganic material and an organic layer containing an organic material are stacked.

As a result, the organic light emitting display device according to an embodiment of the present invention has an upper through-hole 154h and a bank through-hole 160h where the upper overcoat layer 150 and the bank insulating film 160 overlap the repair electrode 430, respectively. ), wherein a capping insulating film 600 is positioned on the repair electrode 430 exposed by the upper through hole 154h to insulate the repair electrode 430 from the upper light emitting electrode 530, thereby forming a repair electrode. Insulation between 430 and the upper light emitting electrode 530 is maintained, and the laser irradiated for the repair process can be prevented from being absorbed and refracted by the insulating films. Therefore, in the organic light emitting display device according to an embodiment of the present invention, damage to adjacent insulating films caused by the laser used in the repair process is prevented, and the process time required for the repair process can be shortened without physical damage.

The organic light emitting display device according to an embodiment of the present invention is described in that the capping insulating layer 600 extends between the upper overcoat layer 150 and the bank insulating layer 160. However, in an organic light emitting display device according to another embodiment of the present invention, the capping insulating film 600 may extend to various positions. For example, in an organic light emitting display device according to another embodiment of the present invention, as shown in FIG. 3, the capping insulating film 600 may extend between the repair electrode 430 and the upper overcoat layer 150. In this case, the capping insulating film 600 of the organic light emitting display device according to another embodiment of the present invention may include a capping contact hole 600h for connecting the repair electrode 430 and the lower electrode 510. Alternatively, an organic light emitting display device according to another embodiment of the present invention may include a capping insulating layer 600 extending between the bank insulating layer 160 and the light emitting layer 520, as shown in FIG. 4 . Accordingly, in the organic light emitting display device according to another embodiment of the present invention, the formation order of the capping insulating film 600 can be adjusted according to process convenience. Accordingly, in the organic light emitting display device according to another embodiment of the present invention, the reliability of the repair process can be efficiently improved and the process time can be effectively shortened.

The organic light emitting display device according to an embodiment of the present invention is described in that the capping insulating film 600 includes an inorganic insulating material. However, an organic light emitting display device according to another embodiment of the present invention may include a capping insulating film 600 made of an organic insulating material. For example, as shown in FIG. 5, an organic light emitting display device according to another embodiment of the present invention may include a capping insulating layer 160p containing the same material as the bank insulating layer 160. In an organic light emitting display device according to another embodiment of the present invention, the capping insulating layer 160p may be formed simultaneously with the bank insulating layer 160. For example, a method of forming an organic light emitting display device according to another embodiment of the present invention includes forming an insulating layer for the bank insulating film 160 on the lower light emitting electrode 510 and an exposure process using a halftone mask. completely exposing the first area of the insulating layer and partially exposing the second area, and removing the exposed area of the insulating layer to partially expose the lower light emitting electrode 510, the bank insulating film 160 and It may include simultaneously forming a capping insulating film 160p covering a portion of the repair electrode 430 exposed by the upper through hole 154h. The capping insulating layer 160p may extend along the side of the upper overcoat layer 150 and be connected to the bank insulating layer 160. Accordingly, the organic light emitting display device according to another embodiment of the present invention can perform a repair process without physical damage, shorten the process time, and improve the reliability of the repair process.

100: lower substrate 130: lower protective film
140: lower overcoat layer 150: upper overcoat layer
320: Repair electrode 435: Repair clad layer
500: light emitting structure 510: lower light emitting electrode
600: capping insulating film

Claims (15)

A repair electrode located on the lower substrate;
an upper overcoat layer located on the repair electrode and including an upper through hole overlapping a portion of the repair electrode;
a first electrode located on the upper overcoat layer and spaced apart from the upper through hole;
a bank insulating film located on the upper overcoat layer and including a bank through hole overlapping the upper through hole; and
An organic light emitting display device comprising a capping insulating film covering a portion of the repair electrode overlapping the upper through hole. According to claim 1,
The capping insulating film is in direct contact with the repair electrode. According to claim 1,
The capping insulating film extends along a side of the upper through hole to cover the first electrode. According to claim 3,
The organic light emitting display device wherein the thickness of the capping insulating film on the repair electrode is equal to the thickness of the capping insulating film on the side of the upper through hole. According to claim 3,
An organic light emitting display device wherein the capping insulating layer includes the same material as the bank insulating layer. According to claim 1,
a lower protective film positioned between the lower substrate and the repair electrode;
a dummy pattern located between the lower substrate and the lower protective layer and including an area overlapping the repair electrode; and
Further comprising a thin film transistor located between the lower substrate and the lower protective film and spaced apart from the dummy pattern,
The dummy pattern includes the same material as one of the conductive layers of the thin film transistor. According to claim 6,
It further includes a lower overcoat layer located between the lower substrate and the repair electrode,
The lower overcoat layer includes a lower through hole overlapping the upper through hole and the dummy pattern,
The repair electrode extends inside the lower through hole. According to claim 7,
The organic light emitting display device in which the size of the upper through hole is smaller than that of the lower through hole. a lower substrate including a light emitting area and a transmissive area;
a repair electrode located on the transparent area of the lower substrate;
an upper overcoat layer located on the repair electrode and including an upper through hole exposing a partial area of the repair electrode;
a lower light emitting electrode located on the upper overcoat layer and overlapping the light emitting area of the lower substrate;
a bank insulating film covering an edge of the lower light emitting electrode and including a bank through hole overlapping the upper through hole; and
An organic light emitting display device comprising a capping insulating film covering the repair electrode exposed by the upper through hole. According to clause 9,
a filler located on the bank insulating film and extending inside the upper through hole and the bank through hole; and
The organic light emitting display device further includes an upper substrate located on the filler and overlapping the light emitting area and the transmission area. According to clause 9,
The capping insulating film extends between the repair electrode and the upper overcoat layer. According to claim 11,
An organic light emitting display device wherein an end of the repair electrode is covered by the capping insulating film. According to clause 9,
an organic light emitting layer located on a portion of the lower light emitting electrode exposed by the bank insulating film; and
It further includes an upper light-emitting electrode located on the organic light-emitting layer,
The organic light emitting layer and the upper light emitting electrode extend inside the upper through hole through the bank through hole. According to claim 13,
The capping insulating film is in direct contact with the organic light emitting layer. According to clause 9,
The upper overcoat layer further includes a contact hole that is spaced apart from the upper through hole and overlaps the repair electrode,
The lower light emitting electrode is connected to the repair electrode through the contact hole.

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