KR20180061902A - Organic Light Emitting Display device having an emitting area and a transport area - Google Patents

Abstract

The present invention relates to a transparent organic light emitting display device in which each pixel region is divided into a light emitting region and a transmitting region. By adjusting a vertical distance between transparent electrodes forming a capacitor as well as increasing an area of the transmitting region by arranging the capacitor in the transmitting region of each pixel region, a decrease in transmittance due to the capacitor is minimized.

Description

[0001] The present invention relates to an organic light emitting display device having a light emitting region and a transmissive region,

The present invention relates to a transparent organic light emitting display in which each pixel region is composed of a light emitting region and a transmissive region.

2. Description of the Related Art Generally, electronic devices such as a monitor, a TV, a notebook, a digital camera, and the like include a display device for implementing an image. For example, the display device may include a liquid crystal display device and an organic light emitting display device.

The OLED display device may include a plurality of pixel regions. Each pixel region can implement different colors. For example, the organic light emitting display device may include a blue pixel region representing blue, a red pixel region representing red, a green pixel region representing green, and a white pixel region representing white. In each pixel region, a light emitting structure for implementing the color of the pixel region may be located. For example, the light emitting structure may include a lower light emitting electrode, an organic light emitting layer, and a top light emitting electrode sequentially stacked.

The OLED display may be a transparent display device. For example, each pixel region of the organic light emitting display device may include a transmissive region through which light incident from the outside is directly transmitted. That is, each pixel region of the organic light emitting display may include a light emitting region in which the light emitting structure and components for controlling the light emitting structure are located, and a transmissive region through which external light is transmitted.

In order to maximize the area of the transmissive region, the organic light emitting display device may include a light emitting structure and components for controlling the light emitting structure, for example, a thin film transistor, signal lines, and a capacitor . However, in the OLED display, the capacitor occupies a relatively large area, so that the area of the transmissive region can be limited by the capacitor. Accordingly, the organic light emitting display device has a problem in that transparency in proportion to an area occupied by a transmissive region in each pixel region is limited.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting display capable of preventing transparency limitation by a capacitor.

Another object of the present invention is to provide an organic light emitting display device capable of increasing the area of a transmissive region in each pixel region without being influenced by a capacitor.

The problems to be solved by the present invention are not limited to the above-mentioned problems. Tasks not mentioned here will be apparent to the ordinarily skilled artisan from the description below.

According to an aspect of the present invention, there is provided an organic light emitting display including a lower substrate. The lower substrate includes a light emitting region and a transmissive region. A light emitting structure is located on the light emitting region of the lower substrate. The light emitting structure includes a lower light emitting electrode, an organic light emitting layer, and an upper light emitting electrode sequentially stacked. A capacitor is located on the transmissive region of the lower substrate. The capacitor includes a lower transparent electrode, a capacitor insulating film, and an upper transparent electrode sequentially stacked. The vertical thickness of the capacitor insulating film is 1700A to 2900A.

The vertical thickness of the capacitor insulating film may be from 2300 A to 2800 A.

A thin film transistor may be positioned between the lower substrate and the light emitting structure. The thin film transistor may include a semiconductor pattern, a gate insulating film, a gate electrode, a source electrode, and a drain electrode. The lower transparent electrode may comprise the same material as the semiconductor pattern of the thin film transistor.

The thin film transistor may include an interlayer insulating film extending between the gate electrode and the source electrode and the drain electrode. The capacitor insulating film may include the same material as the interlayer insulating film of the thin film transistor.

A lower protective film may be positioned between the thin film transistor and the light emitting structure. The capacitor insulating film may include the same material as the lower protective film.

The capacitor insulating film may include silicon oxide.

An auxiliary electrode may be positioned between the lower substrate and the light emitting structure. The auxiliary electrode may be connected to the upper light emitting electrode of the light emitting structure. An upper overcoat layer may be positioned between the auxiliary electrode and the light emitting structure. The upper overcoat layer may include a contact hole exposing a portion of the auxiliary electrode. An auxiliary cladding layer may be positioned between the auxiliary electrode and the upper overcoat layer. The auxiliary cladding layer may cover the auxiliary electrode. The upper transparent electrode may comprise the same material as the auxiliary cladding layer.

The auxiliary cladding layer may include ITO.

According to another aspect of the present invention, there is provided an organic light emitting display including a thin film transistor located on a light emitting region of a lower substrate. A shielding pattern is located between the lower substrate and the thin film transistor. A light emitting structure is located on the thin film transistor. The light emitting structure includes a lower light emitting electrode connected to the thin film transistor. A capacitor is located on the transparent region adjacent to the light emitting region of the lower substrate. The capacitor includes a first capacitor insulating film located between the first transparent electrode and the second transparent electrode. The first capacitor insulating film includes the same material as one of the insulating films located between the light shielding pattern and the lower light emitting electrode. The vertical distance between the first transparent electrode and the second transparent electrode is 1700A to 2900A.

The vertical distance between the first transparent electrode and the second transparent electrode may be between 2300 A and 2800 A.

A buffer insulating film may be disposed between the shielding pattern and the thin film transistor. The buffer insulating film may extend between the first transparent electrode and the second transparent electrode.

The buffer insulating film may directly contact the first transparent electrode and the second transparent electrode.

The capacitor may further include a third transparent electrode positioned on the second transparent electrode and a second capacitor insulating film located between the second transparent electrode and the third transparent electrode.

The vertical thickness of the second capacitor insulating film may be 1700A to 2900A.

The vertical thickness of the second capacitor insulating film may be 2300 Å to 2800 Å.

The second capacitor insulating layer may include a lower capacitor insulating layer including the same material as the interlayer insulating layer of the thin film transistor, and an upper capacitor insulating layer including the same material as the lower protective layer located between the thin film transistor and the lower light emitting electrode.

The OLED display according to the present invention may include a capacitor located on a transmissive region of a lower substrate and may control the vertical distance between the transparent electrodes of the capacitor to maximize the transmittance of the capacitor . Accordingly, in the organic light emitting diode display according to the technical idea of the present invention, the area of the transmissive region is increased, and a decrease in transmittance by the capacitor can be prevented. Therefore, the transparency of the organic light emitting diode display according to the technical idea of the present invention can be improved.

1 is a schematic view illustrating an organic light emitting display according to an embodiment of the present invention.
2 is a graph showing the transmittance according to the distance between the transparent electrodes.
3 to 5 are views showing an organic light emitting display according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

In the drawings, the same reference numerals denote the same components throughout the specification. In the drawings, the lengths and the thicknesses of layers or regions may be exaggerated for convenience. In addition, when the first component is described as being on the second component, it is preferable that the first component is located on the upper side in direct contact with the second component, And the third component is located between the second components.

Here, the terms first, second, etc. are used for describing various components and are used for the purpose of distinguishing one component from another component. However, the first component and the second component may be arbitrarily named according to the convenience of the person skilled in the art without departing from the technical idea of the present invention.

It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. For example, an element represented in singular form includes a plurality of elements unless the context clearly dictates a singular number. Also, in the specification of the present invention, the terms such as " comprises "or" having ", and the like, designate the presence of stated features, integers, steps, operations, elements, But do not preclude the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

In addition, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the meaning in the context of the related art and, unless expressly defined in the specification of the present invention, are intended to mean either an ideal or an overly formal meaning It is not interpreted.

(Example)

1 is a schematic view illustrating an organic light emitting display according to an embodiment of the present invention.

Referring to FIG. 1, an OLED display according to an exemplary embodiment of the present invention includes a lower substrate 100, a thin film transistor 200, an auxiliary electrode 310, an auxiliary cladding layer 410, a light emitting structure 500, (700).

The lower substrate 100 may support the thin film transistor 200, the light emitting structure 500, and the capacitor 900. The lower substrate 100 may include an insulating material. The lower substrate 100 may include a transparent material. For example, the lower substrate 100 may comprise glass or plastic.

The lower substrate 100 may include pixel regions PA. Each pixel region PA can implement a specific color. The pixel regions PA may implement various colors. For example, the lower substrate 100 may include a blue pixel region representing blue, a red pixel region representing red, a green pixel region representing green, and a white pixel region representing white.

Each pixel region PA may include a light emitting region EA and a transmissive region TA. For example, the OLED display according to an embodiment of the present invention may be a transparent display device.

The thin film transistor 200 may be positioned on the light emitting area EA of the lower substrate 100. For example, the thin film transistor 200 may include a semiconductor pattern 210, a gate insulating film 220, a gate electrode 230, an interlayer insulating film 240, a source electrode 250 and a drain electrode 260 have.

The semiconductor pattern 210 may be positioned close to the lower substrate 100. The semiconductor pattern 210 may include a semiconductor material. For example, the semiconductor pattern 210 may include amorphous silicon or polycrystalline silicon. The semiconductor pattern 210 may include an oxide semiconductor material. For example, the semiconductor pattern 210 may include IGZO.

The semiconductor pattern 210 may include a source region, a drain region, and a channel region. The channel region may be located between the source region and the drain region. The conductivity of the channel region may be lower than the conductivity of the source region and the conductivity of the drain region. For example, the source region and the drain region may comprise a conductive impurity.

The organic light emitting display according to the embodiment of the present invention is described as being in direct contact with the semiconductor pattern 210 of the lower substrate 100 and the thin film transistor 200. However, the organic light emitting diode display according to another embodiment of the present invention may further include a buffer insulating layer disposed between the lower substrate 100 and the thin film transistor 200. The buffer insulating layer may include an insulating material. For example, the buffer insulating layer may include silicon oxide.

The gate insulating layer 220 may be located on the semiconductor pattern 210. The gate insulating layer 220 may include an insulating material. For example, the gate insulating layer 220 may include silicon oxide and / or silicon nitride. The gate insulating layer 220 may include a high-K material. For example, the gate insulating layer 220 may include hafnium oxide (HfO) or titanium oxide (TiO). The gate insulating layer 220 may have a multi-layer structure.

The gate electrode 230 may be positioned on the gate insulating layer 220. The gate electrode 230 may overlap the channel region of the semiconductor pattern 210. The gate electrode 230 may be insulated from the semiconductor pattern 210 by the gate insulating layer 220. For example, the gate insulating layer 220 may include a side surface continuous with the side surface of the gate electrode 230. The side surface of the gate electrode 230 may be vertically aligned with the side surface of the gate insulating layer 220.

The gate electrode 230 may include a conductive material. For example, the gate electrode 230 may include a metal such as aluminum (Al), chrome (Cr), molybdenum (Mo), tungsten (W) The gate electrode 230 may have a multi-layer structure.

The interlayer insulating layer 240 may be located on the semiconductor pattern 210 and the gate electrode 230. The interlayer insulating layer 240 may extend outside the semiconductor pattern 210. The gate electrode 230 and the semiconductor pattern 210 may be covered with the interlayer insulating layer 240.

The interlayer insulating layer 240 may include an insulating material. For example, the interlayer insulating layer 240 may include silicon oxide.

The source electrode 250 and the drain electrode 260 may be located on the interlayer insulating layer 240. The source electrode 250 may be electrically connected to the source region of the semiconductor pattern 210. The drain electrode 260 may be electrically connected to the drain region of the semiconductor pattern 210. For example, the interlayer insulating layer 240 may include a contact hole exposing the source region of the semiconductor pattern 210 and a contact hole exposing the drain region. The drain electrode 260 may be spaced apart from the source electrode 250.

The source electrode 250 and the drain electrode 260 may include a conductive material. For example, the source electrode 250 and the drain electrode 260 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W) The drain electrode 260 may include the same material as the source electrode 250. The source electrode 250 and the drain electrode 260 may have a multi-layer structure. The structure of the drain electrode 250 may be the same as that of the source electrode 250.

An organic light emitting display according to an embodiment of the present invention is described as including a thin film transistor 200 in which a gate electrode 230, a source electrode 250 and a drain electrode 260 are insulated by an interlayer insulating layer 240 . However, the organic light emitting diode display according to another embodiment of the present invention includes the thin film transistor 200 in which the gate insulating layer 220 is positioned between the gate electrode 230 and the source electrode 250 and the drain electrode 260 .

The auxiliary electrode 310 may be positioned on the thin film transistor 200. The auxiliary electrode 310 may include a conductive material. For example, the auxiliary electrode 310 may include a metal such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), tungsten (W) The auxiliary electrode 310 may have a multilayer structure. For example, the auxiliary electrode 310 may include a lower auxiliary electrode 311 and a top auxiliary electrode 312 disposed on the lower auxiliary electrode 311.

The organic light emitting diode display according to an exemplary embodiment of the present invention may further include a lower protective layer 130 located between the thin film transistor 200 and the auxiliary electrode 310. The lower protective layer 130 may prevent external moisture, hydrogen, etc. from penetrating into the thin film transistor 200. The lower protective layer 130 may extend outside the source electrode 250 and the drain electrode 260. For example, the source electrode 250 and the drain electrode 260 of the thin film transistor 200 may be covered with the lower protective layer 130. The lower protective layer 130 may be in direct contact with the interlayer insulating layer 240 outside the source electrode 250 and the drain electrode 260. The lower protective layer 130 may include an insulating material. The lower protective layer 130 may include a material different from that of the interlayer insulating layer 240. For example, the lower protective film 130 may include silicon nitride.

The organic light emitting display according to the exemplary embodiment of the present invention may further include a lower overcoat layer 140 disposed between the lower protective layer 130 and the auxiliary electrode 310. The lower overcoat layer 140 may remove a stepped portion by the thin film transistor 200. For example, the upper surface of the lower overcoat layer 140 may be parallel to the surface of the lower substrate 100. The lower overcoat layer 140 may include an insulating material. For example, the lower overcoat layer 140 may comprise an organic insulating material.

The auxiliary cladding layer 410 may be located on the auxiliary electrode 310. The auxiliary cladding layer 410 may prevent the auxiliary electrode 310 from being damaged by a subsequent process. For example, the auxiliary electrode 310 may be covered with the auxiliary cladding layer 410.

The auxiliary cladding layer 410 may include a conductive material. The auxiliary cladding layer 410 may include a material having low reactivity. For example, the auxiliary cladding layer 410 may include a transparent conductive material such as ITO.

The light emitting structure 500 may be disposed on the auxiliary cladding layer 410. The light emitting structure 500 may implement a specific color. For example, the light emitting structure 500 may include a lower light emitting electrode 510, an organic light emitting layer 520, and an upper light emitting electrode 530 sequentially stacked.

The organic light emitting diode display according to an exemplary embodiment of the present invention may further include an upper overcoat layer 150 positioned between the auxiliary clad layer 410 and the light emitting structure 500. The upper overcoat layer 150 may remove a level difference caused by the auxiliary electrode 310. The upper overcoat layer 150 may comprise an insulating material. For example, the upper overcoat layer 150 may comprise an organic insulating material. The upper overcoat layer 150 may include a material other than the lower overcoat layer 140.

The light emitting structure 500 may be controlled by the thin film transistor 200. For example, the lower light emitting electrode 510 of the light emitting structure 500 may be electrically connected to the drain electrode 260 of the thin film transistor 200. The lower overcoat layer 140 and the upper overcoat layer 150 may include contact holes 140h and 151h for exposing the drain electrode 260 of the thin film transistor 200, respectively.

The organic light emitting display according to the exemplary embodiment of the present invention may further include a connection electrode 320 positioned between the lower overcoat layer 140 and the upper overcoat layer 150. The connection electrode 320 may connect the lower light emitting electrode 150 of the light emitting structure 500 to the drain electrode 260 of the thin film transistor 200. The connection electrode 320 may include a conductive material. For example, the connection electrode 320 may include a metal such as copper (Cu), molybdenum (Mo), titanium (Ti), aluminum (Al), tungsten (W) The connection electrode 320 may include the same material as the auxiliary electrode 310. The connection electrode 320 may have a multi-layer structure. For example, the structure of the connection electrode 320 may be the same as that of the auxiliary electrode 310. The connection electrode 320 may include a lower connection electrode 321 and an upper connection electrode 322 located on the lower connection electrode 321.

The organic light emitting diode display according to an embodiment of the present invention may further include a connection cladding layer 420 positioned between the connection electrode 320 and the upper overcoat layer 150. The connection clad layer 420 may cover the connection electrode 320. The connection clad layer 420 may include a conductive material. For example, the connection cladding layer 420 may include the same material as the auxiliary cladding layer 310. The connection cladding layer 420 may include a transparent conductive material such as ITO.

The lower light emitting electrode 510 may include a conductive material. The lower light emitting electrode 510 may include a material having a high reflectivity. For example, the lower light emitting electrode 510 may include a metal such as aluminum (Al) and silver (Ag). The lower electrode 510 may have a multi-layer structure. For example, the lower luminous electrode 510 may include a transparent electrode including a transparent conductive material such as ITO, and a reflective electrode including a material having a high reflectance.

The organic light emitting layer 520 may generate light having a luminance corresponding to a voltage difference between the lower light emitting electrode 510 and the upper light emitting electrode 530. For example, the organic light emitting layer 520 may include an emission material layer (EML) including a light emitting material. The organic light emitting layer 520 may have a multilayer structure capable of enhancing the light emitting efficiency. For example, the organic emission layer 520 may include a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer EIL). ≪ / RTI >

The upper luminescent electrode 530 may include a conductive material. The upper light emitting electrode 530 may include a material different from the lower light emitting electrode 510. For example, the upper light emitting electrode 530 may be a transparent electrode. Accordingly, in the organic light emitting diode display according to the embodiment of the present invention, light generated by the organic light emitting layer 520 may be emitted through the upper light emitting electrode 530.

The organic light emitting display according to an embodiment of the present invention may further include a bank insulating layer 160 for insulating between the light emitting structures 500 of adjacent pixel regions. For example, the bank insulating layer 160 may cover the edge of the lower light emitting electrode 510 of each light emitting structure 500. The organic light emitting layer 520 and the upper light emitting electrode 530 may be stacked on the surface of the lower light emitting electrode 510 exposed by the bank insulating layer 160. The bank insulating layer 160 may include an insulating material. For example, the bank insulating layer 160 may include an organic insulating material such as benzocyclobutene (BCB), polyimide, or photo-acryl. The lower overcoat layer 140 and the upper overcoat layer 150 may include a material different from the bank insulating layer 150.

The organic light emitting layer 520 and the upper light emitting electrode 530 may extend on the bank insulating layer 160. The upper light emitting electrode 530 may be electrically connected to the auxiliary electrode 310. Accordingly, the organic light emitting display according to the embodiment of the present invention can prevent luminance nonuniformity due to the voltage drop of the upper light emitting electrode 530.

The organic light emitting display according to the exemplary embodiment of the present invention may further include a partition 600 for providing a space in which the upper light emitting electrode 530 can be electrically connected to the auxiliary electrode 310. For example, a part of the organic light emitting layer 520 may be separated from the other regions by the partition 600. The upper luminescent electrode 530 may be electrically connected to the auxiliary electrode 310 through a space between the separated regions of the organic light emitting layer 520 by the barrier ribs 600. The vertical length of the bank 600 may be greater than the vertical thickness of the bank insulating layer 160. For example, the barrier rib 600 may include a lower barrier rib 610 and an upper barrier rib 620 located on the lower barrier rib 610. The lower partition 610 and the upper partition 620 may include an insulating material. For example, the lower barrier rib 610 may include the same material as the bank insulating layer 160. The upper barrier rib 620 may include a material different from the lower barrier rib 610. For example, the top barrier 620 may comprise silicon oxide and / or silicon nitride.

The organic light emitting diode display according to the exemplary embodiment of the present invention may further include an intermediate electrode 550 positioned between the auxiliary electrode 310 and the bank insulating layer 160. The intermediate electrode 550 may be connected to the auxiliary electrode 310. For example, the upper overcoat layer 150 may include a through hole 152h that exposes a portion of the auxiliary electrode 310. Referring to FIG. The barrier rib 600 may overlap the intermediate electrode 550. For example, the organic light emitting layer 520 may expose a part of the intermediate electrode 550 by the barrier rib 600. The bank insulating layer 160 may cover the edge of the intermediate electrode 550. The barrier ribs 600 may be located between the bank insulating layers 160. The upper luminescent electrode 530 may be in contact with a part of the intermediate electrode 550 where the organic luminescent layer 520 is not formed by the partition 600. The upper electrode 530 may be electrically connected to the auxiliary electrode 310 through the intermediate electrode 550. The intermediate electrode 550 may include a conductive material. For example, the intermediate electrode 550 may include the same material as the lower electrode 510. The intermediate electrode 550 may have a multi-layer structure. For example, the structure of the intermediate electrode 550 may be the same as the structure of the lower electrode 510.

The capacitor 700 may be positioned on the transmissive region TA of the lower substrate 100. The capacitor 700 may be transparent. For example, the capacitor 700 may be a transparent capacitor 700 including a first transparent electrode 710, a first capacitor insulating film 720, and a second transparent electrode 730 stacked in order.

The first transparent electrode 710 may be positioned close to the lower substrate 100. For example, the first transparent electrode 710 may be in direct contact with the lower substrate 100. The first transparent electrode 710 may include a conductive material. The first transparent electrode 710 may include a transparent material. The first transparent electrode 710 may include the same material as one of the constituent elements of the thin film transistor 200. For example, the first transparent electrode 710 may include the same material as the semiconductor pattern 210. The conductivity of the first transparent electrode 710 may be higher than the conductivity of the channel region of the semiconductor pattern 210. For example, the first transparent electrode 710 may include a conductive impurity.

The first capacitor insulating film 720 may include an insulating material. The first capacitor insulating layer 720 may include a transparent material. For example, the first capacitor insulating film 720 may include silicon oxide.

The second transparent electrode 730 may include a conductive material. The second transparent electrode 730 may include a transparent material. The second transparent electrode 730 may include a material different from the first transparent electrode 710. For example, the second transparent electrode 730 may include the same material as the auxiliary cladding layer 410. The first capacitor insulating layer 720 may include the same material as one of the insulating layers located between the semiconductor pattern 210 and the auxiliary cladding layer 410. For example, the first capacitor insulating layer 720 may include the same material as the interlayer insulating layer 240 or the lower protective layer 130.

The organic light emitting display according to an embodiment of the present invention may further include an upper substrate 800 facing the lower substrate 100. The upper substrate 800 may overlap the emission region EA and the transmissive region TA of the lower substrate 100. For example, the upper substrate 800 may be located on the light emitting structure 500 and the capacitor 700. The upper substrate 800 may include an insulating material. The upper substrate 800 may include a transparent material. For example, the upper substrate 800 may comprise glass or plastic.

In the organic light emitting display according to the embodiment of the present invention, the light emitting structure 500 of each pixel region may implement the same color. For example, the light emitting structure 500 of each pixel region may include a white organic light emitting layer 520. The organic light emitting diode display according to the exemplary embodiment of the present invention may further include a black matrix 810 and a color filter 820 disposed on the upper substrate 800. Accordingly, the organic light emitting display according to the exemplary embodiment of the present invention may display different colors in each pixel region where the light emitting structure 500 implementing the same color is located.

The organic light emitting display according to an embodiment of the present invention may further include a filler 900 filling the space between the lower substrate 100 and the upper substrate 800. The filler 900 can prevent damage to the light emitting structure 500 due to an external impact. For example, the filler 900 may extend between the light emitting structure 500 and the black matrix 810 and the color filter 820.

The organic light emitting display according to the embodiment of the present invention is described in which the light emitting structure 500 directly contacts the filler 900. However, the organic light emitting display according to another embodiment of the present invention may further include a top protective layer disposed between the light emitting structure 500 and the filler 900. The upper protective film may prevent external moisture or the like from penetrating into the light emitting structure 500. The upper protective film may include a multilayer structure. For example, the upper protective film may have a structure in which an inorganic film including an inorganic material and an organic film including an organic material are stacked.

2 is a graph showing the transmittance of the capacitor according to the vertical distance between the transparent electrodes of the capacitor.

Referring to FIG. 2, when the vertical distance between the transparent electrodes is less than 1700 ANGSTROM, the vertical distance between the transparent electrodes is proportional to the transmittance of the capacitor, and when the vertical distance between the transparent electrodes exceeds 2900 ANGSTROM, And the transmittance of the capacitor is inversely proportional to the vertical distance. In addition, it can be seen that the transmittance of the capacitor is kept almost constant in the interval where the vertical distance between the transparent electrodes is 1700A to 2900A. In particular, it can be seen that the transmittance of the capacitor is maximized in a region where the vertical distance between the transparent electrodes is in the range of 2300A to 2800A. The organic light emitting display according to the exemplary embodiment of the present invention has a vertical distance TH between the first transparent electrode 710 and the second transparent electrode 730 of the capacitor 700 in the range of 1700A to 2900A, To 2800A so that the capacitor 700 has a relatively high transmittance.

As a result, the organic light emitting display according to the embodiment of the present invention increases the area of the transmissive area TA by disposing the transparent capacitors 700 in the transmissive area TA of each pixel area PA, ) Between the transparent electrodes of the capacitor 700 has a vertical thickness of 1700A to 2900A, preferably 2300A to 2800A, so that the transmittance of the capacitor 700 can be prevented from lowering.

The organic light emitting display according to the embodiment of the present invention is described as including a first capacitor insulating film 720 in which the capacitor 700 contacts the first transparent electrode 710 and the upper transparent electrode 720. However, in the OLED display according to another embodiment of the present invention, the first capacitor insulating film 720 of the capacitor 700 may have a multilayer structure. 3, the organic light emitting display according to another embodiment of the present invention includes a first capacitor insulating film 720 of the capacitor 700 and a lower capacitor insulating film 721 and an upper capacitor insulating film 722 ). The lower capacitor insulating film 721 and the upper capacitor insulating film 722 are respectively formed on the light emitting area EA of the lower substrate 100 with a component including the same material as the first transparent electrode 710 and the upper transparent electrode 720 The same material as one of the insulating films located between the elements including the same material. The upper capacitor insulating layer 722 may include a material different from the lower capacitor insulating layer 721. For example, the lower capacitor insulating film 721 may include the same material as the interlayer insulating film 240 of the thin film transistor 200, and the upper capacitor insulating film 722 may include the same material as the lower protective film 130 have.

The organic light emitting display according to an embodiment of the present invention includes one of the components of the thin film transistor 200 in which the first transparent electrode 710 of the capacitor 700 directly contacts the lower substrate 100, Lt; RTI ID = 0.0 > 210 < / RTI > However, when a layer including a transparent conductive material is positioned between the lower substrate 100 and the TFT 200, the OLED display according to another embodiment of the present invention includes a first transparent electrode 710 ) May comprise the same material as the layer in question. 4, the organic light emitting display according to another embodiment of the present invention includes a light shielding pattern 110 and a buffer insulating layer 120 between a lower substrate 100 and a thin film transistor 200 Can be located. The light shielding pattern 110 can prevent malfunction of the thin film transistor 200 due to external light. For example, the light shielding pattern 110 may overlap the semiconductor pattern 210 of the thin film transistor 200. The light blocking pattern 110 may have a multi-layer structure. For example, the light shielding pattern 110 may include a relatively opaque lower shielding pattern 111 and a relatively transparent upper shielding pattern 112. The first transparent electrode 710 of the capacitor 700 may include the same material as the upper shielding pattern 112 of the shielding pattern 110 in the organic light emitting display according to another embodiment of the present invention. The first capacitor insulating film 720 of the capacitor 700 may include the same material as the buffer insulating film 120 in the OLED display according to another embodiment of the present invention. Accordingly, the transparency of the OLED display according to another embodiment of the present invention can be efficiently improved.

The organic light emitting display according to the embodiment of the present invention is described in which the capacitor 700 includes two transparent electrodes 710 and 730. 5, the organic light emitting diode display according to another embodiment of the present invention includes a first transparent electrode 710, a first capacitor insulating layer 720, and a second transparent electrode layer 720 on which a capacitor 700 is sequentially stacked. A transparent electrode 730, a second capacitor insulating film 740, and a third transparent electrode 750. The vertical distance between the first transparent electrode 710 and the second transparent electrode 730 in the OLED display according to another embodiment of the present invention may be in the range of 1700A to 2900A, preferably 2300A to 2800A. The vertical distance between the second transparent electrode 730 and the third transparent electrode 750 in the organic light emitting display according to another embodiment of the present invention may be 1700A to 2900A, preferably 2300A to 2800A. For example, the organic light emitting diode display according to another embodiment of the present invention includes a light shielding pattern 110, a buffer insulating layer 120, a thin film transistor 200, The auxiliary electrode 310, the auxiliary cladding layer 410, and the light emitting structure 500 may be stacked in this order. The first transparent electrode 710 may include the same material as the transparent upper shielding pattern 111 of the shielding pattern 110. The second transparent electrode 730 may include the same material as the semiconductor pattern of the thin film transistor 200. The third transparent electrode 750 may include the same material as the auxiliary cladding layer 410. The first capacitor insulating layer 720 may include the same material as the buffer insulating layer 120. The second capacitor insulating layer 740 includes a lower capacitor insulating layer 741 including the same material as the interlayer insulating layer 240 of the thin film transistor 200 and an upper capacitor insulating layer 742). Therefore, the organic light emitting display according to another embodiment of the present invention can effectively prevent a decrease in the transmittance of the transmissive region by the capacitor.

100: lower substrate 130: lower protective film
140: lower overcoat layer 150: upper overcoat layer
200: thin film transistor 310: auxiliary electrode
410: auxiliary cladding layer 500: light emitting structure
700: Capacitor

Claims (15)

A lower substrate including a light emitting region and a transmissive region;
A light emitting structure disposed on the light emitting region of the lower substrate and including a lower light emitting electrode, an organic light emitting layer, and an upper light emitting electrode sequentially stacked; And
And a capacitor disposed on the transmissive region of the lower substrate and including a lower transparent electrode, a capacitor insulating film, and an upper transparent electrode stacked in order,
Wherein the vertical thickness of the capacitor insulating layer is in a range of 1700A to 2900A. The method according to claim 1,
Wherein the capacitor insulating layer has a vertical thickness of 2300 to 2800 ANGSTROM. The method according to claim 1,
And a thin film transistor located between the lower substrate and the light emitting structure and including a semiconductor pattern, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode,
Wherein the lower transparent electrode comprises the same material as the semiconductor pattern. The method of claim 3,
Wherein the thin film transistor further includes an interlayer insulating film extending between the gate electrode and the source electrode and the drain electrode,
Wherein the capacitor insulating film includes the same material as the interlayer insulating film. The method of claim 3,
And a lower protective layer disposed between the thin film transistor and the light emitting structure,
Wherein the capacitor insulating layer comprises the same material as the lower protective layer. The method according to claim 1,
Wherein the capacitor insulating film includes silicon oxide. The method according to claim 1,
An auxiliary electrode positioned between the lower substrate and the light emitting structure and connected to the upper light emitting electrode;
An upper overcoat layer disposed between the auxiliary electrode and the light emitting structure and including a contact hole exposing a part of the auxiliary electrode; And
And an auxiliary cladding layer disposed between the auxiliary electrode and the upper overcoat layer and covering the auxiliary electrode,
Wherein the upper transparent electrode comprises the same material as the auxiliary cladding layer. 8. The method of claim 7,
Wherein the auxiliary cladding layer comprises ITO. A thin film transistor positioned on the light emitting region of the lower substrate;
A light shielding pattern located between the lower substrate and the thin film transistor;
A light emitting structure disposed on the thin film transistor and including a lower light emitting electrode connected to the thin film transistor; And
A first capacitor disposed on the transparent region adjacent to the light emitting region of the lower substrate and including the same material as one of the insulating films located between the first transparent electrode and the second transparent electrode and between the light shielding pattern and the lower light emitting electrode, And a capacitor in which an insulating film is located,
Wherein a vertical distance between the first transparent electrode and the second transparent electrode is in a range of 1700A to 2900A. 10. The method of claim 9,
Wherein a vertical distance between the first transparent electrode and the second transparent electrode is 2300 ANGSTROM to 2800 ANGSTROM. 10. The method of claim 9,
And a buffer insulating layer disposed between the shielding pattern and the thin film transistor,
Wherein the buffer insulating layer extends between the first transparent electrode and the second transparent electrode. 12. The method of claim 11,
Wherein the buffer insulating layer is in direct contact with the first transparent electrode and the second transparent electrode. 12. The method of claim 11,
The capacitor further includes a third transparent electrode positioned on the second transparent electrode and a second capacitor insulating film located between the second transparent electrode and the third transparent electrode,
And the vertical thickness of the second capacitor insulating layer is in a range of 1700A to 2900A. 14. The method of claim 13,
And the vertical thickness of the second capacitor insulating layer is in a range of 2300A to 2800A. 14. The method of claim 13,
Wherein the second capacitor insulating layer comprises a lower capacitor insulating layer including the same material as the interlayer insulating layer of the thin film transistor and an upper capacitor insulating layer including the same material as the lower protective layer located between the thin film transistor and the lower light emitting electrode. Device.

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