KR102511044B1 - Display device having a black matrix - Google Patents

Abstract

The present invention relates to a display device including a double-layered black matrix in order to prevent color mixing between adjacent pixel areas. It is a technical feature to reduce and prevent thickness variation due to the lower black matrix.

Description

Display device having a black matrix {Display device having a black matrix}

The present invention relates to a display device that prevents color mixing of adjacent pixel areas using a black matrix.

In general, electronic devices such as monitors, TVs, laptop computers, and digital cameras include display devices for displaying images. For example, the display device may include a liquid crystal display device and/or an organic light emitting display device.

The display device may include pixel areas implementing various colors. For example, the display device may include a blue pixel area implementing blue, a green pixel area implementing green, and a red pixel area implementing red.

The display device may implement colors using color filters. For example, the display device may include a blue color filter, a green color filter, and a red color filter positioned on an upper substrate facing the lower substrate. The blue color filter may overlap the blue pixel area. The green color filter may overlap the green pixel area. The red color filter may overlap the red pixel area.

The display device may further include a black matrix to prevent color mixing of adjacent pixel areas. For example, the black matrix may be positioned between the color filters. The black matrix may overlap an end of each color filter. For example, the black matrix may be positioned to overlap end portions of the color filters on a lower surface of the upper substrate facing the lower substrate. The black matrix may include a low-reflection material. For example, the black matrix may include resin.

The display device may include a black matrix having a double layer structure in order to minimize deterioration of an aperture ratio due to the black matrix. For example, in the display device, each color filter may include an end positioned between a lower black matrix and an upper black matrix. However, in the display device including the double-layered black matrix, the overall thickness may be increased by the thickness of the lower black matrix positioned on the lower surface of the color filters facing the lower substrate. In addition, in the display device, a thickness deviation due to the lower black matrix may occur, which may cause damage due to a pressure difference in the bonding process, and may also cause distortion of liquid crystal.

An object to be solved by the present invention is to provide a display device capable of preventing color mixture by using a black matrix and minimizing a decrease in aperture ratio and an increase in overall thickness due to the black matrix.

Another problem to be solved by the present invention is to provide a display device capable of minimizing a thickness deviation due to the black matrix including a black matrix having a double layer structure.

The problems to be solved by the present invention are not limited to the aforementioned problems. Subjects not mentioned herein will become clear to those skilled in the art from the following description.

A display device according to the technical spirit of the present invention for achieving the above object includes an upper substrate positioned on a lower substrate. An upper black matrix is positioned on the lower surface of the upper substrate facing the lower substrate. A lower black matrix is positioned on a lower surface of the upper black matrix facing the lower substrate. A color filter is positioned on the lower surface of the upper substrate. The color filter includes an end positioned between the lower black matrix and the upper black matrix. The lower black matrix contains metal. The lower black matrix has a different size than the upper black matrix.

A capping layer may be positioned on a lower surface of the lower black matrix and a lower surface of the color filter facing the lower substrate. A lower surface of the capping film facing the lower substrate may be a flat surface.

A thickness of the lower black matrix on the end of the color filter may be smaller than that of the upper black matrix.

A horizontal width of the lower black matrix may be smaller than that of the upper black matrix.

The reflectance of the upper black matrix may be lower than that of the lower black matrix.

The upper black matrix may include a resin.

A display device according to the technical idea of the present invention for achieving the other object to be solved includes an upper substrate positioned on a lower substrate. A color filter is positioned on the lower surface of the upper substrate facing the lower substrate. A lower black matrix is positioned on the lower surface of the color filter facing the lower substrate. The lower black matrix overlaps the ends of the color filters. An upper black matrix is positioned between the color filter and the upper substrate. The upper black matrix overlaps the lower black matrix. A thickness of the lower black matrix may be smaller than that of the upper black matrix.

A capping layer may be positioned between the lower black matrix and the color filter.

A spacer may be positioned on a lower surface of the lower black matrix facing the lower substrate. A bump pattern may be positioned on an upper surface of the lower substrate facing the upper substrate. The bump pattern may overlap with the spacer. A liquid crystal layer may be positioned between the lower substrate and the color filter.

A horizontal width of the upper black matrix may be smaller than a horizontal width of the lower black matrix.

A display device according to the technical concept of the present invention includes a lower black matrix positioned on a lower surface of an upper substrate facing a lower substrate and an upper black matrix positioned between the lower black matrix and the upper substrate, wherein the lower black matrix It may contain a material that is relatively easy to process, such as a metal. Accordingly, in the display device according to the technical idea of the present invention, the thickness and/or horizontal width of the lower black matrix can be minimized. Therefore, in the display device according to the technical concept of the present invention, thickness increase and thickness deviation due to the black matrix can be minimized.

1 is a schematic diagram of a display device according to an embodiment of the present invention.
FIG. 2A is an enlarged view of region P in FIG. 1 .
FIG. 2B is an enlarged view of region R in FIG. 1 .
3 to 7 are views illustrating a display device according to another exemplary embodiment of the present invention.

The above objects and technical configurations of the present invention and details of the operation and effect thereof will be more clearly understood by the following detailed description with reference to the drawings illustrating the embodiments of the present invention. Here, since the embodiments of the present invention are provided to sufficiently convey the technical spirit of the present invention to those skilled in the art, the present invention may be embodied in other forms so as not to be limited to the embodiments described below.

Also, parts denoted by the same reference numerals throughout the specification mean the same components, and the length and thickness of a layer or region in the drawings may be exaggerated for convenience. In addition, when a first component is described as being “on” a second component, the first component is not only located on the upper side in direct contact with the second component, but also the first component and the second component. A case where the third component is located between the second components is also included.

Here, terms such as first and second are used to describe various components, and are used for the purpose of distinguishing one component from another. However, the first component and the second component may be named arbitrarily according to the convenience of those skilled in the art within the scope of the technical idea of the present invention.

Terms used in the specification of the present invention are only used to describe specific embodiments, and are not intended to limit the present invention. For example, a component expressed in the singular number includes a plurality of components unless the context clearly indicates only the singular number. In addition, in the specification of the present invention, terms such as "comprise" or "having" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or It should be understood that it does not preclude the possibility of the presence or addition of more other features, numbers, steps, operations, components, parts, or combinations thereof.

In addition, unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in the specification of the present invention, in an ideal or excessively formal meaning. not interpreted

(Example)

1 is a schematic diagram of a display device according to an embodiment of the present invention. FIG. 2A is an enlarged view of region P in FIG. 1 . FIG. 2B is an enlarged view of region R in FIG. 1 .

Referring to FIGS. 1, 2a and 2b, the display device according to an embodiment of the present invention includes a lower substrate 100. The lower substrate 100 may include an insulating material. For example, the lower substrate 100 may include glass or plastic.

The lower substrate 100 may include pixel areas BEA, GEA, and REA and non-display areas NEA. The non-display areas NEA may be positioned between the pixel areas BEA, GEA, and REA. For example, the pixel areas BEA, GEA, and REA may be defined by the non-display areas NEA.

Adjacent pixel areas BEA, GEA, and REA may implement different colors. For example, the pixel areas BEA, GEA, and REA include a blue pixel area BEA implementing blue, a green pixel area GEA implementing green, and a red pixel area REA implementing red. can do.

Thin film transistors 200 may be positioned on the upper surface of the lower substrate 100 . The pixel areas BEA, GEA, and REA may be controlled by the corresponding thin film transistor 200 . Each thin film transistor 200 may include a semiconductor pattern 210 , a gate insulating layer 220 , a gate electrode 230 , an interlayer insulating layer 240 , a source electrode 250 and a drain electrode 260 .

The semiconductor pattern 210 may be positioned close to the lower substrate 100 . The semiconductor pattern 210 may include a semiconductor material. For example, the semiconductor pattern 210 may include amorphous silicon or polycrystalline silicon. The semiconductor pattern 210 may be an oxide semiconductor. For example, the semiconductor pattern 210 may include IGZO.

The semiconductor pattern 210 may include a source region, a drain region, and a channel region. The channel region may be positioned between the source region and the drain region. Conductivity of the channel region may be lower than conductivities of the source region and conductivities of the drain region. For example, the source region and the drain region may include conductive impurities.

The gate insulating layer 220 may be positioned on the semiconductor pattern 210 . A size of the gate insulating layer 220 may be smaller than that of the semiconductor pattern 210 . For example, the gate insulating layer 220 may overlap the channel region of the semiconductor pattern 210 .

The gate insulating layer 220 may include an insulating material. For example, the gate insulating layer 220 may include silicon oxide and/or silicon nitride. The gate insulating layer 220 may include a high-K material. For example, the gate insulating layer 220 may include hafnium oxide (HfO) or titanium oxide (TiO). The gate insulating layer 220 may have a multi-layer structure.

The gate electrode 230 may be positioned on the gate insulating layer 220 . For example, the gate electrode 230 may overlap the channel region of the semiconductor pattern 210 . The gate electrode 230 may be insulated from the semiconductor pattern 210 by the gate insulating layer 220 . For example, a side surface of the gate electrode 230 may be vertically aligned with a side surface of the gate insulating layer 220 .

The gate electrode 230 may include a conductive material. For example, the gate electrode 230 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), or tungsten (W).

The interlayer insulating layer 240 may be positioned on the semiconductor pattern 210 and the gate electrode 230 . The interlayer insulating layer 240 may extend outside the semiconductor pattern 210 . For example, side surfaces of the semiconductor pattern 210 may be covered by the interlayer insulating layer 240 .

The interlayer insulating layer 240 may include an insulating material. For example, the interlayer insulating layer 240 may include silicon oxide.

The source electrode 250 may be positioned on the interlayer insulating layer 240 . The source electrode 250 may be electrically connected to the source region of the semiconductor pattern 210 . For example, the source electrode 250 may overlap the source region of the semiconductor pattern 210 . The interlayer insulating layer 240 may include a contact hole partially exposing the source region of the semiconductor pattern 210 .

The source electrode 250 may include a conductive material. For example, the source electrode 250 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), or tungsten (W). The source electrode 250 may include a material different from that of the gate electrode 230 .

The drain electrode 260 may be positioned on the interlayer insulating layer 240 . The drain electrode 260 may be electrically connected to the drain region of the semiconductor pattern 210 . The drain electrode 260 may be spaced apart from the source electrode 250 . For example, the drain electrode 260 may overlap the drain region of the semiconductor pattern 210 . The interlayer insulating layer 240 may further include a contact hole partially exposing the drain region of the semiconductor pattern 210 .

The drain electrode 260 may include a conductive material. For example, the drain electrode 260 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), or tungsten (W). The drain electrode 260 may include a material different from that of the gate electrode 230 . The drain electrode 260 may include the same material as the source electrode 250 .

A buffer layer 110 may be positioned between the lower substrate 100 and the thin film transistors 200 . For example, the buffer layer 110 may be positioned between the lower substrate 100 and the semiconductor pattern 210 . The buffer layer 110 may extend outside the semiconductor pattern 210 . For example, the buffer layer 110 may directly contact the interlayer insulating layer 240 outside the semiconductor pattern 210 . The buffer layer 110 may include an insulating material. For example, the buffer layer 110 may include silicon oxide.

A lower passivation layer 120 may be positioned on the thin film transistor 200 . The lower protective layer 120 may protect the thin film transistor 200 from external impact and moisture. For example, the lower passivation layer 120 may extend outside the source electrode 250 and the drain electrode 260 . The lower passivation layer 120 may directly contact the interlayer insulating layer 240 outside the source electrode 250 and the drain electrode 260 . The lower passivation layer 120 may include an insulating material. The lower passivation layer 120 may include a material different from that of the interlayer insulating layer 240 . For example, the lower passivation layer 120 may include silicon nitride.

An overcoat layer 130 may be positioned on the lower passivation layer 120 . The overcoat layer 130 may remove a step caused by the thin film transistors 200 . For example, an upper surface of the overcoat layer 130 facing the lower substrate 100 may be a flat surface.

The overcoat layer 130 may include an insulating material. The overcoat layer 130 may include a material different from that of the lower passivation layer 120 . The overcoat layer 130 may include a material having relatively high fluidity. For example, the overcoat layer 130 may include an organic insulating material.

Light emitting structures 300B, 300G, and 300R may be positioned on the overcoat layer 130 . Each of the light emitting structures 300B, 300G, and 300R may generate light representing a specific color. For example, each of the light emitting structures 300B, 300G, and 300R may include a lower electrode 310, a light emitting layer 320, and an upper electrode 330 sequentially stacked on the overcoat layer 130. .

The light emitting structures 300B, 300G, and 300R may be positioned on the pixel areas BEA, GEA, and REA of the lower substrate 100 . Each of the light emitting structures 300B, 300G, and 300R may overlap one of the pixel areas BEA, GEA, REA, and GEA of the lower substrate 100 . For example, the light emitting structures 300B, 300G, and 300R may include the blue light emitting structure 300B positioned on the blue pixel area BEA of the lower substrate 100 and the green light emitting structure 300B of the lower substrate 100. A green light emitting structure 300G positioned on the pixel area GEA and a red light emitting structure 300R positioned on the red pixel area REA of the lower substrate 100 may be included.

The lower electrode 310 may be positioned close to the overcoat layer 130 . Each light emitting structure 300 may be controlled by a corresponding thin film transistor 200 . For example, the lower electrode 310 may be electrically connected to the drain electrode 260 of the thin film transistor 200 . For example, the lower passivation layer 120 may include lower contact holes partially exposing the drain electrode 260 of each of the thin film transistors 200 . The overcoat layer 130 may include upper contact holes overlapping the lower contact holes. The lower electrode 310 may be connected to the drain electrode 260 of the thin film transistor 200 through a corresponding lower contact hole and a corresponding upper contact hole.

The lower electrode 310 may include a conductive material. For example, the lower electrode 310 may include a metal such as Mo or Ti. The lower electrode 310 may include a material having high reflectivity. For example, the lower electrode 310 may include a metal such as aluminum (Al) or silver (Ag). The lower electrode 310 may have a multi-layer structure. For example, the lower electrode 310 may have a structure in which a reflective electrode including a material with high reflectivity is positioned between transparent electrodes including a transparent conductive material such as ITO or IZO.

The lower electrode 310 of each of the light emitting structures 300B, 300G, and 300R may be insulated from the lower electrode 310 of the adjacent light emitting structures 300B, 300G, and 300R. For example, the bank insulating layer 140 may be positioned between the lower electrodes 310 of the adjacent light emitting structures 300B, 300G, and 300R. The bank insulating layer 140 may cover an edge of the corresponding lower electrode 310 . The light emitting layer 320 and the upper electrode 330 may be stacked on a surface of a partial region of the corresponding lower electrode 310 exposed by the bank insulating layer 140 . For example, the area of each pixel area BEA, GEA, REA, and WEA may be defined by the bank insulating layer 140 . The bank insulating layer 140 may overlap the non-display area NEA of the lower substrate 100 .

The bank insulating layer 140 may include an insulating material. For example, the bank insulating layer 140 may include an organic insulating material. The bank insulating layer 140 may include a material different from that of the overcoat layer 130 .

The light emitting layer 320 may generate light having a luminance corresponding to a voltage difference between the corresponding lower electrode 310 and the corresponding upper electrode 143 . The light emitting layer 320 may include an emission material layer (EML) including a light emitting material. The light-emitting material may include an organic material, an inorganic material, or a hybrid material. For example, a display device according to an embodiment of the present invention may be an organic light emitting display device including an emission layer 320 made of an organic material.

The light emitting layer 320 may have a multi-layer structure in order to increase light emitting efficiency. For example, the light emitting layer 320 may include a hole injection layer (HIL), a hole transporting layer (HTL), an electron transporting layer (ETL), and an electron injection layer (EIL). ), at least one of which may be further included.

The light emitting layer 320 may extend onto the bank insulating layer 140 . Each of the light emitting structures 300B, 300G, and 300R may include a light emitting layer 320 generating light representing the same color. For example, the light emitting structures 300B, 300G, and 300R may generate white light. The light-emitting layers 320 of the light-emitting structures 300B, 300G, and 300R may be connected to each other.

The upper electrode 330 may include a conductive material. The upper electrode 330 may include a material different from that of the lower electrode 310 . For example, the upper electrode 330 may be a transparent electrode including a transparent conductive material such as ITO or IZO. Accordingly, in the organic light emitting diode display according to the embodiment of the present invention, light generated by the light emitting layer 320 may be emitted to the outside of the upper electrode 330 .

The upper electrode 330 may extend along the light emitting layer 320 . For example, the upper electrode 330 may extend onto the bank insulating layer 140 . The upper electrode 330 of each of the light emitting structures 300B, 300G, and 300R may be connected to the upper electrode 330 of the adjacent light emitting structures 300B, 300G, and 300R.

An upper passivation layer 150 may be positioned on the light emitting structures 300B, 300G, and 300R. The upper passivation layer 150 may protect the light emitting structures 300B, 300G, and 300R from external impact and moisture. The upper passivation layer 150 may include an insulating material. The upper passivation layer 150 may have a multi-layer structure. For example, the upper passivation layer 150 may have a structure in which an organic insulating layer containing an organic insulating material is positioned between inorganic insulating layers containing an inorganic insulating material.

An upper substrate 400 may be positioned on the upper passivation layer 150 . The upper substrate 400 may be parallel to the lower substrate 100 . For example, the upper substrate 400 may overlap the pixel areas BEA, GEA, and REA and the non-display area NEA of the lower substrate 100 .

The upper substrate 400 may include an insulating material. The upper substrate 400 may include a transparent material. For example, the upper substrate 400 may include glass or plastic. The upper substrate 400 may include the same material as the lower substrate 100 . Accordingly, in the display device according to the embodiment of the present invention, an image by the light emitting structures 300B, 300G, and 300R may be implemented on the outside of the upper substrate 400 .

Color filters 510B, 510G, and 510R may be positioned on the lower surface of the upper substrate 400 facing the lower substrate 100 . The color filters 510B, 510G, and 510R may be positioned on the pixel areas BEA, GEA, and REA of the lower substrate 100 . Each of the color filters 510B, 510G, and 510R may overlap one of the light emitting structures 300B, 300G, and 300R. For example, the color filters 510B, 510G, and 510R include a blue color filter 510B positioned on the blue light emitting structure 300B and a green color filter 510G positioned on the green light emitting structure 300G. ) and a red color filter 510R positioned on the red light emitting structure 300R.

The color filters 510B, 510G, and 510R may implement a specific color using light emitted from the corresponding light emitting structures 300B, 300G, and 300R. For example, blue color may be implemented in the blue pixel area BEA of the lower substrate 100 by the blue light emitting structure 300B and the blue color filter 510B. In the green pixel area GEA of the lower substrate 100 , green color may be implemented by the green light emitting structure 300G and the green color filter 510G. In the red pixel area REA of the lower substrate 100 , red color may be implemented by the red light emitting structure 300R and the red color filter 510R.

A black matrix 520 may be positioned on ends of the color filters 510B, 510G, and 510R. In the black matrix 520, light generated from the light emitting layer 320 of each pixel area BEA, GEA, and REA passes through the color filters 510B, 510G, and 510R of the adjacent pixel areas BEA, GEA, and REA, Discharge to the outside of the upper substrate 400 may be prevented. The black matrix 520 may have a double layer structure. For example, the black matrix 520 includes the lower black matrix 521 and the color filters 510B positioned on the lower surface of the color filters 510B, 510G, and 510R toward the lower substrate 100 . , 510G, 510R) and an upper black matrix 522 positioned between the upper substrate 400 .

The lower black matrix 521 may overlap the bank insulating layer 140 . For example, the lower black matrix 521 may overlap the non-display area NEA of the lower substrate 100 . Ends of the color filters 510B, 510G, and 510R may be positioned between the lower black matrix 521 and the upper black matrix 522 . Accordingly, in the display device according to the embodiment of the present invention, light generated from each of the light emitting structures 300B, 300G, and 300R is incident on the color filters 510B, 510G, and 510R of adjacent pixel areas BEA, GEA, and REA. becoming can be prevented. The lower black matrix 521 may fill a space between ends of adjacent color filters 510B, 510G, and 510R.

The lower black matrix 521 may include a light blocking material. The lower black matrix 521 may include a material that is easy to process. For example, the lower black matrix 521 may include a metal such as chromium (Cr). Accordingly, in the display device according to the embodiment of the present invention, the thickness t1 of the lower black matrix 521 on the ends of the color filters 510B, 510G, and 510R is the thickness of the upper black matrix 522. (t2) may be thinner. Therefore, in the display device according to the embodiment of the present invention, thickness increase and thickness deviation due to the black matrix 520 can be reduced. A horizontal width W1 of the lower black matrix 521 may be equal to a horizontal width W2 of the upper black matrix 522 .

The upper black matrix 522 may be positioned on a lower surface of the upper substrate 400 facing the lower substrate 100 . For example, the upper black matrix 522 may be positioned between ends of the color filters 510B, 510G, and 510R and the upper substrate 400 . The upper black matrix 522 may overlap the lower black matrix 521 . For example, the lower black matrix 521 may be positioned on a lower surface of the upper black matrix 522 facing the lower substrate 100 . The upper black matrix 522 is not blocked by the lower black matrix 521, but is generated from each of the light emitting structures 300B, 300G, and 300R and is adjacent to the color filter 510B of the pixel areas BEA, GEA, and REA. 510G, 510R) direction can be blocked. Accordingly, in the display device according to the embodiment of the present invention, the horizontal width W1 of the lower black matrix 521 to prevent color mixing of adjacent pixel areas BEA, GEA, and REA can be minimized. Therefore, in the display device according to the embodiment of the present invention, the decrease in aperture ratio due to the black matrix 520 is minimized, and color mixing between adjacent pixel areas BEA, GEA, and REA can be effectively prevented.

The upper black matrix 522 may directly contact the lower surface of the upper substrate 400 . Accordingly, in the display device according to the embodiment of the present invention, light incident from the outside may not pass through the color filters 510B, 510G, and 510R. That is, in the display device according to the embodiment of the present invention, reflection of external light can be prevented from passing through a different color filter than when it is incident by the upper black matrix 522 . Therefore, in the display device according to the embodiment of the present invention, color mixing due to reflection of external light can be prevented.

The upper black matrix 522 may include a material different from that of the lower black matrix 521 . For example, the upper black matrix 522 may include a low-reflection material. The reflectance of the upper black matrix 522 may be lower than that of the lower black matrix 521 . For example, the upper black matrix 522 may include resin.

A capping layer 530 may be positioned on lower surfaces of the color filters 510B, 510G, and 510R facing the lower substrate 100 and on a lower surface of the lower black matrix 521 . The color filters 510B, 510G, and 510R and the black matrix 520 may be positioned between the capping layer 530 and the upper substrate 400 . The capping layer 530 may prevent the color filters 510B, 510G, and 510R and the black matrix 520 from being damaged by subsequent processes. The capping layer 530 may include an insulating material. For example, the capping layer 530 may include silicon oxide.

The capping layer 530 may compensate for a level difference caused by the lower black matrix 521 . In the display device according to the embodiment of the present invention, since the lower black matrix 521 can be formed with a sufficiently thin thickness (t1), the capping film 530 prevents a thickness deviation due to the lower black matrix 521. can be removed For example, a lower surface of the capping layer 530 facing the lower substrate 100 may be a flat surface. A lower surface of the capping layer 530 may be parallel to a lower surface of the upper substrate 400 . Accordingly, in the display device according to the embodiment of the present invention, an overall increase in thickness is minimized, and thickness deviation due to the black matrix 520 can be eliminated.

In the display device according to the embodiment of the present invention, it is described that the thickness t1 of the lower black matrix 521 is smaller than the thickness t2 of the upper black matrix 522 . However, in a display device according to another embodiment of the present invention, the lower black matrix 521 may have a size different from that of the upper black matrix 522 . For example, in a display device according to another embodiment of the present invention, as shown in FIG. 3 , the thickness t1 of the lower black matrix 521 is equal to the thickness t2 of the upper black matrix 522. And, the horizontal width W1 of the lower black matrix 521 may be smaller than the horizontal width W2 of the upper black matrix 522 . Alternatively, in the display device according to another embodiment of the present invention, as shown in FIG. 4 , the thickness t1 and the horizontal width W1 of the lower black matrix 521 are the thickness t2 of the upper black matrix 522. ) and a value smaller than the horizontal width W2. Accordingly, in the display device according to another embodiment of the present invention, the degree and area of the thickness deviation caused by the lower black matrix 521 can be selectively minimized. Therefore, in the display device according to the embodiment of the present invention, thickness increase and thickness deviation by the lower black matrix 521 can be efficiently controlled.

A filling layer 600 may be positioned between the upper passivation layer 150 and the capping layer 530 . For example, a lower surface of the capping layer 530 may directly contact the filling layer 600 . The filling layer 600 may include an adhesive material. The upper substrate 400 may be combined with the lower substrate 100 on which the light emitting structures 300B, 300G, and 300R are formed by the filling layer 600 . The filling layer 600 may include an insulating material. The filling layer 600 may include a transparent material. Accordingly, in the display device according to the embodiment of the present invention, reduction in luminance due to the filling layer 600 can be minimized.

As a result, in the display device according to the embodiment of the present invention, the lower black matrix 521 positioned relatively close to the lower substrate 100 is formed of a material that is relatively easy to process, such as metal, so that the lower black matrix 521 At least one of the thickness t1 and the horizontal width W1 of ) may have a smaller value than the thickness t2 and the horizontal width W2 of the upper black matrix 522 . Therefore, in the display device according to the embodiment of the present invention, thickness increase and thickness deviation due to the lower black matrix 521 can be minimized.

In the display device according to the embodiment of the present invention, it is described that the light emitting structures 300B, 300G, and 300R are positioned on the upper surface of the lower substrate 100 facing the upper substrate 400 . However, a display device according to another embodiment of the present invention may be a liquid crystal display device. For example, as shown in FIG. 5 , in a display device according to another embodiment of the present invention, a common electrode 301 and a pixel passivation layer are formed on an overcoat layer 130 that eliminates a step by a thin film transistor 201. 170 and the pixel electrode 302 may be sequentially stacked. The thin film transistor 201 includes a gate electrode 211, a gate insulating film 221 positioned on the gate electrode 211, a semiconductor pattern 231 positioned on the gate insulating film 221, and the semiconductor pattern 231 ) may include a source electrode 241 connected to one side region and a drain electrode 251 connected to the other side region of the semiconductor pattern 231 . The drain electrode 251 may be spaced apart from the source electrode 241 . The drain electrode 251 may be connected to the pixel electrode 302 through a contact hole passing through the overcoat layer 130 . The pixel passivation layer 170 may insulate between the common electrode 301 and the pixel electrode 302 . For example, the pixel passivation layer 170 may include an insulating material such as silicon nitride and/or silicon oxide. The common electrode 301 and the pixel electrode 302 may include a transparent conductive material such as ITO and IZO. A liquid crystal layer 700 may be positioned between the pixel electrode 302 and the capping layer 530 .

The display device according to another embodiment of the present invention may further include bump patterns 190 and spacers 540 to maintain the vertical height of the liquid crystal layer 700 . For example, the bump pattern 190 may pass through the overcoat layer 130 and extend into a contact hole exposing a portion of the drain electrode 251 . The spacer 540 may be positioned on the bump pattern 190 . For example, the bump pattern 190 and the spacer 540 may overlap the lower black matrix 521 . The spacer 540 may be positioned on a lower surface of the lower black matrix 521 . Accordingly, in the display device according to another embodiment of the present invention, color mixing can be prevented even when the liquid crystal layer 700 malfunctions due to an electric field formed between the adjacent common electrode 301 and the pixel electrode 302 . Therefore, in the display device according to another embodiment of the present invention, the decrease in aperture ratio is minimized by using the double-layered black matrix 520, color mixing is prevented, and thickness increase and thickness deviation due to the black matrix 520 are minimized. can be minimized.

In the display device according to another embodiment of the present invention, the lower black matrix 521 has a thinner thickness than the upper black matrix 522, and the horizontal width of the lower black matrix 521 is equal to the horizontal width of the upper black matrix 522. It is described as being equal to the width. However, as shown in FIG. 6, in the display device according to another embodiment of the present invention, the thickness t4 of the upper black matrix 522 is greater than the thickness t3 of the lower black matrix 521, but the lower black matrix 521 has a thickness t4. A horizontal width W4 of the upper black matrix 522 may be smaller than a horizontal width W3 of the black matrix 521 . Accordingly, in the display device according to another embodiment of the present invention, the visibility of the upper black matrix 522 blocking reflection of external light by the lower black matrix 521 may be reduced. Therefore, in the display device according to another embodiment of the present invention, color mixing is prevented by the black matrix 520, and visibility of an image can be improved.

In the display device according to another embodiment of the present invention, it is described that the capping layer 530 is positioned between the spacer 540 and the lower black matrix 521 . However, as shown in FIG. 7 , in a display device according to another embodiment of the present invention, lower surfaces of color filters 510B, 510G, and 510R may directly contact the capping layer 530 . That is, in the display device according to another embodiment of the present invention, the lower surface of the lower black matrix 521 may directly contact the spacer 540 . Accordingly, in the display device according to another embodiment of the present invention, separation of the spacer 540 can be prevented. Therefore, in the display device according to another embodiment of the present invention, thickness increase and thickness deviation are prevented by the lower black matrix 521 including metal, and defects due to separation of the spacer 540 can be reduced. .

100: lower substrate 200: thin film transistor
300B, 300G, 300R: light emitting structure 400: upper substrate
510B, 510G, 510R: color filter 520: black matrix
521: lower black matrix 522: upper black matrix
600: filling layer

Claims (10)

an upper substrate positioned on the lower substrate;
an upper black matrix positioned on a lower surface of the upper substrate facing the lower substrate;
a lower black matrix positioned on a lower surface of the upper black matrix facing the lower substrate and having a size different from that of the upper black matrix; and
color filters disposed on the lower surface of the upper substrate and including an end disposed between the lower black matrix and the upper black matrix;
An end of each color filter overlaps a color filter implementing a different color from the corresponding color filter between the lower black matrix and the upper black matrix,
The lower black matrix is in contact with a lower surface of each color filter facing the lower substrate;
The upper black matrix is in contact with an upper surface of each color filter facing the upper substrate;
The lower black matrix includes metal,
On the lower surface of each color filter, a thickness of the lower black matrix is smaller than a thickness of the upper black matrix. According to claim 1,
Further comprising a capping film positioned on a lower surface of the lower black matrix facing the lower substrate and on the lower surface of each color filter;
A lower surface of the capping film facing the lower substrate is a flat surface. According to claim 1,
The lower black matrix is in contact with a lower surface of the end of one of the color filters. According to claim 1,
A horizontal width of the lower black matrix is smaller than a horizontal width of the upper black matrix. According to claim 1,
The reflectance of the upper black matrix is lower than the reflectance of the lower black matrix. According to claim 5,
The display device of claim 1, wherein the upper black matrix includes a resin. an upper substrate positioned on the lower substrate;
color filters positioned on a lower surface of the upper substrate facing the lower substrate;
a lower black matrix positioned on a lower surface of each color filter facing the lower substrate and overlapping an end of each color filter; and
An upper black matrix positioned between the color filters and the upper substrate and overlapping the lower black matrix,
An end of each color filter overlaps a color filter implementing a different color from the corresponding color filter between the lower black matrix and the upper black matrix,
The lower black matrix is in contact with a lower surface of each color filter facing the lower substrate;
The upper black matrix contacts an upper surface of each color filter facing the upper substrate;
On the lower surface of each color filter, a thickness of the lower black matrix is smaller than a thickness of the upper black matrix. According to claim 7,
The display device further comprises a capping layer positioned between the lower black matrix and the color filters. According to claim 7,
a spacer located on a lower surface of the lower black matrix facing the lower substrate;
a bump pattern located on an upper surface of the lower substrate facing the upper substrate and overlapping the spacer; and
A display device comprising a liquid crystal layer positioned between the lower substrate and the color filters. According to claim 9,
A horizontal width of the upper black matrix is smaller than a horizontal width of the lower black matrix.

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