KR102448068B1 - Organic Light-Emitting Display apparatus having a black bank insulating layer - Google Patents

Abstract

The present invention relates to an organic light emitting diode display capable of preventing color mixing of adjacent light emitting regions, wherein a lower black matrix and an upper black matrix are stacked on a black bank insulating layer, wherein the lower black matrix has a smaller horizontal width than the black bank insulating layer By having , it is a technical feature to prevent a decrease in the aperture ratio due to misalignment.

Description

TECHNICAL FIELD [0002] Organic Light-Emitting Display apparatus having a black bank insulating layer;

The present invention relates to an organic light emitting diode display including a black bank insulating layer to prevent color mixing of adjacent light emitting regions.

BACKGROUND ART In general, electronic devices such as monitors, TVs, laptops, and digital cameras include display devices for implementing images. For example, the display device may include an organic light emitting diode display including a light emitting device.

The organic light emitting diode display may include light emitting areas and a non-emission area positioned between the light emitting areas. A light emitting element may be positioned within each light emitting area. For example, the light emitting device may include a lower electrode, a light emitting layer, and an upper electrode that are sequentially stacked. Adjacent light emitting regions may implement different colors. For example, color filters of different colors may be positioned in adjacent light emitting regions.

The organic light emitting diode display may include a black bank insulating layer and a black matrix to prevent color mixing of adjacent light emitting regions. The black bank insulating layer insulates lower electrodes of adjacent light emitting devices, but may mean a bank insulating layer including a black-based material. For example, the black bank insulating layer may overlap the non-emission region. The black matrix may be disposed on the black bank insulating layer. In the organic light emitting diode display, in order to maximize the effect of preventing color mixing by the black bank insulating layer and the black matrix, a gap between the black matrix and the black bank insulating layer may be minimized. However, in the organic light emitting diode display, the black matrix located close to the black bank insulating film blocks light traveling toward the edge of the corresponding light emitting area, so that the recognition area of light emitted from each light emitting area is reduced. have.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting display device capable of preventing color mixing of adjacent light emitting areas and maximizing a recognition area of light emitted from each light emitting area.

The problems to be solved by the present invention are not limited to the aforementioned problems. Problems not mentioned herein will be clearly understood by those skilled in the art from the following description.

An organic light emitting diode display according to the technical idea of the present invention for achieving the above object includes a lower substrate. The lower substrate includes a light-emitting area and a non-emission area. A light emitting device is positioned on the light emitting area of the lower substrate. The light emitting device includes a lower electrode, a light emitting layer, and an upper electrode that are sequentially stacked. A black bank insulating layer is positioned on the non-emission region of the lower substrate. The black bank insulating layer covers the edge of the lower electrode. A lower black matrix is positioned on the black bank insulating layer. A color filter is positioned on the light emitting element. The color filter includes an end overlapping the underlying black matrix. On the end of the color filter is an upper black matrix. The horizontal width of the lower black matrix is smaller than the horizontal width of the black bank insulating layer.

The horizontal width of the upper black matrix may be the same as the horizontal width of the black bank insulating layer.

The horizontal width of the black bank insulating layer may be the same as the horizontal width of the non-emission region of the lower substrate.

The lower black matrix may include a metal.

The upper black matrix may include an insulating material.

The upper black matrix may include a material different from that of the black bank insulating layer.

An encapsulation layer may be positioned between the light emitting device and the color filter. The encapsulation layer may extend between the black bank insulating layer and the lower black matrix. The color filter and the underlying black matrix may be in direct contact with the encapsulation layer.

An upper surface of the encapsulation layer facing the lower substrate may have a flat surface.

A capping layer may be positioned between the end of the color filter and the upper black matrix. The capping layer may extend over the light emitting region of the lower substrate.

An upper surface of the capping layer facing the lower substrate may be a flat plane.

An organic light emitting diode display according to the inventive concept includes a lower black matrix positioned on a black bank insulating layer and an upper black matrix positioned on the lower black matrix. The lower black matrix may have a smaller horizontal width than the black bank insulating layer. Accordingly, the organic light emitting display device according to the inventive concept maximizes the recognition area of light emitted from each light emitting area, and the color of the light emitting area adjacent by the black bank insulating layer, the lower black matrix, and the upper black matrix. It is possible to block light traveling in the direction of the filter. Accordingly, in the organic light emitting diode display according to the technical idea of the present invention, light extraction efficiency and color reproducibility of each light emitting region may be improved.

1 is a diagram schematically illustrating an organic light emitting display device according to an embodiment of the present invention.
FIG. 2 is an enlarged view of region P of FIG. 1 .
FIG. 3 is an enlarged view of the R region of FIG. 1 .
4 and 5 are views illustrating an organic light emitting diode display according to another exemplary embodiment of the present invention.

Details regarding the above object and technical configuration of the present invention and the effects thereof will be more clearly understood by the following detailed description with reference to the drawings showing embodiments of the present invention. Here, since the embodiments of the present invention are provided so that the technical idea of the present invention can be sufficiently conveyed to those skilled in the art, the present invention may be embodied in other forms so as not to be limited to the embodiments described below.

In addition, parts indicated by the same reference numerals throughout the specification mean the same components, and in the drawings, the length and thickness of a layer or region may be exaggerated for convenience. In addition, when it is described that a first component is "on" a second component, the first component is not only located above the first component in direct contact with the second component, but also the first component and the A case in which a third component is positioned between the second component is also included.

Here, terms such as the first, second, etc. are used to describe various components, and are used for the purpose of distinguishing one component from other components. However, within the scope not departing from the spirit of the present invention, the first component and the second component may be arbitrarily named according to the convenience of those skilled in the art.

Terms used in the specification of the present invention are only used to describe specific embodiments, and are not intended to limit the present invention. For example, elements expressed in the singular include plural elements unless the context clearly means only the singular. In addition, in the specification of the present invention, terms such as "comprises" or "have" are intended to designate the existence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification, one or It should be understood that it does not preclude the possibility of addition or existence of other features or numbers, steps, operations, components, parts, or combinations thereof.

In addition, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with the meanings in the context of the related art, and, unless explicitly defined in the specification of the present invention, have ideal or excessively formal meanings. not interpreted

(Example)

1 is a diagram schematically illustrating an organic light emitting display device according to an embodiment of the present invention. FIG. 2 is an enlarged view of region P of FIG. 1 . FIG. 3 is an enlarged view of the R region of FIG. 1 .

1 to 3 , an organic light emitting diode display according to an exemplary embodiment includes a lower substrate 100 . The lower substrate 100 includes an insulating material. For example, the lower substrate 100 may include glass or plastic.

The lower substrate 100 may include light emitting areas BEA, GEA, and REA and a non-emission area NEA. The non-emissive area NEA may be positioned between the light-emitting areas BEA, GEA, and REA. For example, the light-emitting areas BEA, GEA, and REA may be defined by the non-emission area NEA.

The adjacent light emitting areas BEA, GEA, and REA may emit light having different colors. For example, the light emitting areas BEA, GEA, and REA emit a blue light emitting area BEA emitting blue light, a green light emitting area GEA emitting green light, and red light emitting light. and a red light emitting area REA.

Thin film transistors 200 may be positioned on the upper surface of the lower substrate 100 . The luminance and emission timing of each of the light emitting areas BEA, GEA, and REA may be controlled by the corresponding thin film transistor 200 . For example, each thin film transistor 200 may include a semiconductor pattern 210 , a gate insulating layer 220 , a gate electrode 230 , an interlayer insulating layer 240 , a source electrode 250 , and a drain electrode 260 . can

The semiconductor pattern 210 may include a semiconductor material. For example, the semiconductor pattern 210 may include amorphous silicon or polycrystalline silicon. The semiconductor pattern 210 may be an oxide semiconductor. For example, the semiconductor pattern 210 may include IGZO.

The semiconductor pattern 210 may include a source region, a drain region, and a channel region. The channel region may be positioned between the source region and the drain region. For example, the channel region may have lower conductivity than the source region and the drain region.

The gate insulating layer 220 may be positioned on the semiconductor pattern 210 . The gate insulating layer 220 may overlap the channel region of the semiconductor pattern 210 . For example, the gate insulating layer 220 may expose upper surfaces of the source region and the drain region facing the lower substrate 100 .

The thin gate insulating layer 220 may include an insulating material. For example, the gate insulating layer 220 may include silicon oxide and/or silicon nitride. The gate insulating layer 220 may include a high-K material. For example, the gate insulating layer 220 may include hafnium oxide (HfO) or titanium oxide (TiO). The gate insulating layer 220 may have a multilayer structure.

The gate electrode 230 may be positioned on the gate insulating layer 220 . For example, the gate electrode 230 may overlap the channel region of the semiconductor pattern 210 . A side surface of the gate electrode 230 may be vertically aligned with a side surface of the gate insulating layer 220 .

The gate electrode 230 may include a conductive material. For example, the gate electrode 230 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), or tungsten (W).

The interlayer insulating layer 240 may be disposed on the semiconductor pattern 210 and the gate electrode 230 . The interlayer insulating layer 240 may extend in an outer direction of the semiconductor pattern 210 . For example, the interlayer insulating layer 240 of each thin film transistor 200 may be connected to each other.

The interlayer insulating layer 240 may include an insulating material. For example, the interlayer insulating layer 240 may include silicon oxide.

The source electrode 250 and the drain electrode 260 may be positioned on the interlayer insulating layer 240 . The source electrode 250 may be electrically connected to the source region of the semiconductor pattern 210 . The drain electrode 260 may be electrically connected to the drain electrode of the semiconductor pattern 210 . The drain electrode 260 may be spaced apart from the source electrode 250 . For example, the insulating interlayer 240 may include a source contact hole exposing the source region of each semiconductor pattern 210 and a drain contact hole exposing the drain region of each semiconductor pattern 210 .

The source electrode 250 and the drain electrode 260 may include a conductive material. For example, the source electrode 250 and the drain electrode 260 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), or tungsten (W). The drain electrode 260 may include the same material as the source electrode 250 . The gate electrode 230 may include a material different from that of the source electrode 250 and the drain electrode 260 .

A buffer insulating layer 110 may be positioned between the lower substrate 100 and the thin film transistors 200 . For example, the buffer insulating layer 110 may be positioned between the lower substrate 100 and the semiconductor pattern 210 of each thin film transistor 200 . The buffer insulating layer 110 may extend in an outer direction of the semiconductor pattern 210 . For example, the entire upper surface of the lower substrate 100 may be covered by the buffer insulating layer 150 .

The buffer insulating layer 110 may include an insulating material. For example, the buffer insulating layer 110 may include silicon oxide.

A lower passivation layer 120 may be positioned on the thin film transistors 200 . The lower protective layer 120 may protect each thin film transistor 200 from external impact and moisture. For example, the lower passivation layer 120 covering each thin film transistor 200 may be connected to each other.

The lower passivation layer 120 may include an insulating material. For example, the lower passivation layer 120 may include silicon oxide and/or silicon nitride. The lower passivation layer 120 may have a multilayer structure.

An overcoat layer 130 may be positioned on the lower passivation layer 120 . The overcoat layer 130 may remove a step caused by the thin film transistors 200 . For example, the upper surface of the overcoat layer 130 facing the lower substrate 100 may be a flat surface.

The overcoat layer 130 may include an insulating material. The overcoat layer 130 may include a material different from that of the lower passivation layer 120 . For example, the overcoat layer 130 may include an organic insulating material.

Light emitting devices 300B, 300G, and 300R may be positioned on the overcoat layer 130 . The light emitting devices 300B, 300G, and 300R may be positioned on the light emitting areas BEA, GEA, and REA of the lower substrate 100 . For example, the light emitting devices 300B, 300G, and 300R may include a blue light emitting device 300B disposed on the blue light emitting area BEA and a green light emitting device 300G disposed on the green light emitting area GEA. ) and a red light emitting device 300R positioned on the red light emitting area REA.

Each of the light emitting devices 300B, 300G, and 300R may emit light having a specific color. For example, each of the light emitting devices 300B, 300G, and 300R may include a lower electrode 310 , a light emitting layer 320 , and an upper electrode 330 that are sequentially stacked.

The lower electrode 310 may be located close to the overcoat layer 130 . For example, the lower electrode 310 may directly contact the overcoat layer 130 . Each of the light emitting devices 300B, 300G, and 300R may be controlled by the corresponding thin film transistor 200 . For example, the lower electrode 310 of each of the light emitting devices 300B, 300G, and 300R may be electrically connected to the drain electrode 260 of the corresponding thin film transistor 200 . The lower passivation layer 120 and the overcoat layer 130 may include electrode contact holes partially exposing the drain electrode 260 of each thin film transistor.

The lower electrode 310 may include a conductive material. The lower electrode 310 may include a material having high reflectivity. For example, the lower electrode 310 may include a metal such as aluminum (Al) and silver (Ag). The lower electrode 310 may have a multilayer structure. For example, the lower electrode 310 may have a structure in which a reflective electrode including a material having high reflectivity is positioned between transparent electrodes including a transparent conductive material such as ITO or IZO.

The emission layer 320 may generate light having a luminance corresponding to a voltage difference between the lower electrode 310 and the upper electrode 330 . For example, the emission layer 320 may include an emission material layer (EML) including an emission material. The light emitting material may include an organic material, an inorganic material, or a hybrid material. The light emitting layer 320 may have a multilayer structure. For example, the light emitting layer 320 may include a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (Electron Injection Layer); EIL) may further include at least one of.

The upper electrode 330 may include a conductive material. The upper electrode 330 may include a material different from that of the lower electrode 310 . For example, the upper electrode 330 may be a transparent electrode. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, light generated by the emission layer 320 may be emitted through the upper electrode 330 .

The light emitting devices 300B, 300G, and 300R positioned on the adjacent light emitting areas BEA, GEA, and REA may be driven independently of each other. For example, the adjacent light emitting devices 300B, 300G, and 300R may be insulated from each other by the black bank insulating layer 140 . The black bank insulating layer 140 may be positioned on the non-emission area NEA of the lower substrate 100 . For example, the black bank insulating layer 140 may have the same horizontal width W1 as the non-emission area NEA of the lower substrate 100 . The black bank insulating layer 140 may cover the edge of the lower electrode 310 of each of the light emitting devices 300B, 300G, and 300R. The light emitting layer 320 and the upper electrode 330 of each of the light emitting devices 300B, 300G, and 300R may be stacked on a partial region of the corresponding lower electrode 310 exposed by the black bank insulating layer 140 . The adjacent light emitting devices 300B, 300G, and 300R may emit light having the same color. For example, the emission layer 320 and the upper electrode 330 may extend on the black bank insulating layer 140 .

The black bank insulating layer 140 may include an insulating material. The black bank insulating layer 140 may block light propagating in the direction of the adjacent light emitting areas BEA, GEA, and REA. For example, the black bank insulating layer 140 may include a light absorbing material. The black bank insulating layer 140 may include an insulating material. The black bank insulating layer 140 may have a black-based color. For example, the black bank insulating layer 140 may include a black resin and an insulating light absorbing material such as graphite.

An encapsulation layer 400 may be positioned on the light emitting devices 300B, 300G, and 300R. The encapsulation layer 400 may prevent damage to the light emitting devices 300B, 300G, and 300R caused by external impact and moisture. For example, the encapsulation layer 400 may extend along the upper electrode 330 .

The encapsulation layer 400 may include an insulating material. The encapsulation layer 400 may have a multi-layer structure. For example, the encapsulation layer 400 may have a structure in which a lower inorganic layer 410 , an organic layer 420 , and an upper inorganic layer 430 are sequentially stacked. The lower inorganic layer 410 and the upper inorganic layer 430 may include an inorganic material. The organic layer 420 may include an organic material. Steps caused by the light emitting devices 300B, 300G, and 300R may be removed by the organic layer 420 . For example, the upper surface of the organic film 420 facing the upper inorganic film 430 and the upper surface of the upper inorganic film 430 facing the lower substrate 100 are the overcoat layer 130 . may be parallel to the upper surface of The upper surface of the encapsulation layer 400 facing the lower substrate 100 may be a flat plane.

A lower black matrix 510 and color filters 520B, 520G, and 520R may be positioned on the encapsulation layer 400 . The lower black matrix 510 may be located in the non-emission area NEA of the lower substrate 100 . The color filters 520B, 520G, and 520B may be positioned on the emission areas BEA, GEA, and REA of the lower substrate 100 . For example, the color filters 520B, 520G, and 520R may include a blue color filter 520B overlapping the blue light emitting device 300B, a green color filter 520G overlapping the green light emitting device 300G, and A red color filter 520R overlapping the red light emitting device 300R may be included. The color filters 520B, 520G, and 520R may extend onto the adjacent non-emission area NEA. For example, each of the color filters 520B, 520G, and 520R may include an end overlapping the adjacent lower black matrix 510 . Ends of adjacent color filters 520B, 520G, and 520R may be stacked on the lower black matrix 510 .

The color filters 520B, 520G, and 520R may implement a specific color using light emitted from the corresponding light emitting devices 300B, 300G, and 300R. The lower black matrix 510 may block light propagating from each of the light emitting devices 300B, 300G, and 300R in the direction of the color filters 520B, 520G, and 520R of the adjacent light emitting areas BEA, GEA, and REA. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, color mixing of adjacent light emitting areas BEA, GEA, and REA may be prevented by the black bank insulating layer 140 and the lower black matrix 510 . .

The lower black matrix 510 may overlap the black bank insulating layer 140 . For example, the lower black matrix 510 may be positioned between ends of the color filters 520B, 520G, and 520R and the black bank insulating layer 140 . The lower black matrix 510 may be located close to the black bank insulating layer 140 . For example, the lower black matrix 510 may directly contact the encapsulation layer 400 . A horizontal width W2 of the lower black matrix 510 may be smaller than a horizontal width W1 of the black bank insulating layer 140 . Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, a decrease in the aperture ratio of the light emitting areas BEA, GEA, and REA due to mis-alignment of the lower black matrix 510 may be prevented. .

The lower black matrix 510 may include a material capable of blocking light. For example, the lower black matrix 510 may include a black resin or an insulating light absorbing material such as graphite. The lower black matrix 510 may include a material different from that of the black bank insulating layer 140 .

A capping layer 600 may be positioned on the lower black matrix 510 and the color filters 520B, 520G, and 520R. The capping layer 600 may remove a step caused by the color filters 520B, 520G, and 520R and/or the lower black matrix 510 . The capping layer 600 may include an insulating material. For example, the capping layer 600 may include an organic insulating material.

An upper black matrix 700 may be positioned on the capping layer 600 . The upper black matrix 700 may supplement the role of the lower black matrix 510 . For example, the color filter 520B of the light emitting areas BEA, GEA, and REA adjacent to each of the light emitting devices 300B, 300G, and 300R that are not blocked by the bank insulating layer 140 and the lower black matrix 510; Light traveling in the 520G and 520R directions may be blocked by the upper black matrix 700 . That is, in the organic light emitting diode display according to an embodiment of the present invention, light propagating from each of the light emitting devices 300B, 300G, and 300R in the direction of the adjacent light emitting areas BEA, GEA, and REA is transmitted to the black bank insulating layer 140 and the It may be blocked by the lower black matrix 510 or the upper black matrix 700 . Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, color mixing of the adjacent light emitting areas BEA, GEA, and REA can be effectively prevented.

The upper black matrix 700 may include a material capable of blocking light. For example, the upper black matrix 700 may include a black resin or an insulating light absorbing material such as graphite. The upper black matrix 700 may include a material different from that of the lower black matrix 700 . The upper black matrix 700 may include a material different from that of the black bank insulating layer 140 .

A thickness t2 of the upper black matrix 700 may be the same as a thickness t1 of the lower black matrix 510 . A horizontal width W3 of the upper black matrix 700 may be greater than a horizontal width W2 of the lower black matrix 510 . For example, the horizontal width W3 of the upper black matrix 700 may be the same as the horizontal width W1 of the black bank insulating layer 140 . Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, the upper black matrix 700 may have a wider light blocking range than the lower black matrix 510 . Accordingly, in the organic light emitting display device according to an embodiment of the present invention, a reduction in the area for recognizing light emitted from each of the light emitting areas BEA, GEA, and REA and color mixing of the adjacent light emitting areas BEA, GEA, and REA are prevented. can be

A device passivation layer 800 may be positioned on the upper black matrix 700 . The device passivation layer 800 may alleviate an impact applied from the outside. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, damage due to an external impact may be minimized. The device passivation layer 800 may include an insulating material. For example, the device passivation layer 800 may include silicon oxide and/or silicon nitride. The device passivation layer 800 may have a multilayer structure.

An optical film 900 may be positioned on the device protective layer 800 . The optical film 900 may prevent reflection of external light. For example, the optical film 900 may include a linear polarizing film 910 and a quarter wave plate 920 stacked in order. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, image quality and color reproducibility implemented by the light emitting elements 300B, 300G, and 300R may be improved.

As a result, the organic light emitting diode display according to an embodiment of the present invention insulates between adjacent light emitting devices 300B, 300G, and 300R through the black bank insulating layer 140 , and a lower black layer is formed on the black bank insulating layer 140 . A matrix 510 and an upper black matrix 700 are stacked, but the lower black matrix 510 may have a relatively small size. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, a decrease in the aperture ratio due to misalignment may be prevented, and color mixing of the adjacent light emitting areas BEA, GEA, and REA may be prevented. In addition, in the organic light emitting diode display according to an embodiment of the present invention, a reduction in the recognition area by the lower black matrix 510 located close to the black bank insulating layer 140 can be prevented. Accordingly, in the organic light emitting diode display according to an embodiment of the present invention, light extraction efficiency and color reproducibility of each light emitting region may be improved.

In the organic light emitting diode display according to an embodiment of the present invention, the thickness t1 of the lower black matrix 510 is the same as the thickness t2 of the upper black matrix 700 . However, in an organic light emitting diode display according to another embodiment of the present invention, the lower black matrix 510 may have a thickness different from that of the upper black matrix 700 . For example, as shown in FIG. 4 , in the organic light emitting diode display according to another embodiment of the present invention, the thickness t3 of the lower black matrix 510 may be thicker than the thickness t2 of the upper black matrix 700 . can Accordingly, in the organic light emitting diode display according to another embodiment of the present invention, the range blocked by the lower black matrix 510 may be improved. That is, in the organic light emitting diode display according to another embodiment of the present invention, the horizontal width W4 of the lower black matrix 510 may be further reduced. To this end, in the organic light emitting diode display according to another embodiment of the present invention, the lower black matrix 510 may be formed of a material that is relatively easy to process and pattern, such as a metal. Accordingly, in the organic light emitting diode display according to another exemplary embodiment of the present invention, light extraction efficiency and color reproducibility of each light emitting region may be effectively improved.

In the organic light emitting diode display according to an embodiment of the present invention, it is described that the capping layer 600 is positioned between the color filters 520B, 520G, and 520R and the upper black matrix 700 . However, as shown in FIG. 5 , in the organic light emitting diode display according to another exemplary embodiment, the upper black matrix 700 may directly contact the color filters 520B, 520G, and 520R. Accordingly, in the organic light emitting diode display according to another embodiment of the present invention, the process may be simplified. Accordingly, in the organic light emitting diode display according to another embodiment of the present invention, color mixing of adjacent light emitting areas BEA, GEA, and REA is effectively prevented, and light emitted from each of the light emitting devices 300B, 300G, and 300R is recognized. This can be maximized.

100: lower substrate 200: thin film transistor
300B, 300G, 300R: light emitting element 400: encapsulation layer
510: lower black matrix 520B, 520G, 520R: color filter
700: upper black matrix

Claims (10)

a lower substrate including a light emitting area and a non-emission area;
a light emitting device positioned on the light emitting region of the lower substrate and including a lower electrode, a light emitting layer, and an upper electrode stacked in order;
a black bank insulating layer disposed on the non-emission region of the lower substrate and covering an edge of the lower electrode;
a lower black matrix positioned on the black bank insulating layer;
a color filter positioned on the light emitting device and including an end portion overlapping the lower black matrix; and
an upper black matrix positioned on the end of the color filter and overlapping the black bank insulating layer;
A horizontal width of the lower black matrix positioned between the black bank insulating layer and the upper black matrix is smaller than a horizontal width of the black bank insulating layer and a horizontal width of the upper black matrix. The method of claim 1,
A horizontal width of the upper black matrix is the same as a horizontal width of the black bank insulating layer. 3. The method of claim 2,
A horizontal width of the black bank insulating layer is the same as a horizontal width of the non-emission region of the lower substrate. The method of claim 1,
The lower black matrix includes a metal. The method of claim 1,
The upper black matrix includes an insulating material. 6. The method of claim 5,
The upper black matrix includes a material different from that of the black bank insulating layer. The method of claim 1,
and an encapsulation layer positioned between the light emitting device and the color filter and extending between the black bank insulating layer and the lower black matrix,
The color filter and the lower black matrix are in direct contact with the encapsulation layer. 8. The method of claim 7,
An upper surface of the encapsulation layer facing the lower substrate is a flat surface. The method of claim 1,
and a capping layer positioned between the end of the color filter and the upper black matrix and extending over the light emitting area of the lower substrate. 10. The method of claim 9,
An upper surface of the capping layer facing the lower substrate is a flat surface.

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