KR20180048900A - 촬상 소자 및 촬상 장치 - Google Patents

촬상 소자 및 촬상 장치 Download PDF

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Publication number
KR20180048900A
KR20180048900A KR1020187009049A KR20187009049A KR20180048900A KR 20180048900 A KR20180048900 A KR 20180048900A KR 1020187009049 A KR1020187009049 A KR 1020187009049A KR 20187009049 A KR20187009049 A KR 20187009049A KR 20180048900 A KR20180048900 A KR 20180048900A
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KR
South Korea
Prior art keywords
light
region
incident
microlens
image pickup
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Ceased
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KR1020187009049A
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English (en)
Korean (ko)
Inventor
도모히사 이시다
요시유키 와타나베
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가부시키가이샤 니콘
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Priority to KR1020207036799A priority Critical patent/KR102488709B1/ko
Publication of KR20180048900A publication Critical patent/KR20180048900A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H01L27/14627—
    • H01L27/14623—
    • H01L27/14665—
    • H01L31/0232—
    • H04N5/369—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
KR1020187009049A 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치 Ceased KR20180048900A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020207036799A KR102488709B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015195347 2015-09-30
JPJP-P-2015-195347 2015-09-30
PCT/JP2016/078278 WO2017057277A1 (ja) 2015-09-30 2016-09-26 撮像素子および撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207036799A Division KR102488709B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치

Publications (1)

Publication Number Publication Date
KR20180048900A true KR20180048900A (ko) 2018-05-10

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KR1020187009049A Ceased KR20180048900A (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치
KR1020237001097A Active KR102623653B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치
KR1020247000327A Ceased KR20240010528A (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치
KR1020207036799A Active KR102488709B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치

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KR1020237001097A Active KR102623653B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치
KR1020247000327A Ceased KR20240010528A (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치
KR1020207036799A Active KR102488709B1 (ko) 2015-09-30 2016-09-26 촬상 소자 및 촬상 장치

Country Status (6)

Country Link
US (2) US20180294300A1 (https=)
EP (1) EP3358620B1 (https=)
JP (3) JPWO2017057277A1 (https=)
KR (4) KR20180048900A (https=)
CN (2) CN108174619B (https=)
WO (1) WO2017057277A1 (https=)

Cited By (1)

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KR20210093869A (ko) * 2018-11-21 2021-07-28 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자

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KR20210093869A (ko) * 2018-11-21 2021-07-28 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자
US12342093B2 (en) 2018-11-21 2025-06-24 Sony Semiconductor Solutions Corporation Solid-state image sensor

Also Published As

Publication number Publication date
KR102623653B1 (ko) 2024-01-10
WO2017057277A1 (ja) 2017-04-06
EP3358620A1 (en) 2018-08-08
JP2023017991A (ja) 2023-02-07
JPWO2017057277A1 (ja) 2018-07-26
US20220085220A1 (en) 2022-03-17
KR102488709B1 (ko) 2023-01-13
CN108174619B (zh) 2022-09-20
CN108174619A (zh) 2018-06-15
EP3358620B1 (en) 2025-08-20
US20180294300A1 (en) 2018-10-11
EP3358620A4 (en) 2019-04-24
CN115295569A (zh) 2022-11-04
KR20230009533A (ko) 2023-01-17
KR20240010528A (ko) 2024-01-23
JP7383597B2 (ja) 2023-11-20
KR20200145850A (ko) 2020-12-30
JP2021044572A (ja) 2021-03-18

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