KR20180045199A - A roll-to-roll type apparatus for depositing a atomic layer - Google Patents

Abstract

The present invention relates to a roll-to-roll type atomic layer deposition apparatus, in which a pair of film winding rollers are simply provided, a film is moved throughout a source-purge process space and a reaction-purge space by the film winding rollers, and an atomic layer deposition is processed in a combination scheme between a space division with a time division, such that the width of the film to be processed is freely selective, and the atomic layer deposition in one space is incompletely processed so as to extend a cleaning period of a chamber, thereby increasing productivity. The roll-to-roll type atomic layer deposition apparatus according to the present invention includes: a source deposition process unit for performing a source deposition and a second purge step which are portions of the atomic layer deposition process, while a film undergoing the atomic layer deposition process moves through a certain space; a reactive deposition process unit provided while communicating with the source deposition process unit so as to perform reactive deposition and a first purge step which are portions of the atomic layer deposition process, while the film passing through the source deposition process unit moves through a certain space; a gas-passing-prevention type film passing unit provided between the source deposition process unit and the reactive deposition process unit so as to prevent gas of the both sides from passing while allowing the film to pass; and a heater provided at the source deposition process unit, the reactive deposition process unit, and the gas-passing-prevention type film passing unit, so as to maintain the temperature inside the source deposition process unit, the reactive deposition process unit, and the gas-passing-prevention type film passing unit.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a roll-to-roll atomic layer deposition apparatus,

The present invention relates to a roll-to-roll atomic layer deposition apparatus, and more particularly, to a film deposition apparatus in which a pair of film take-up rollers are simply provided and the film is moved by the film- The atomic layer deposition process is performed by a combination of space division and time division so that the width of the processable film is free and the complete atomic layer deposition process in one space is not completed so that the cleaning cycle of the chamber is long, To a deposition apparatus.

In the case of atomic layer deposition (ALD), a thin film is formed by the chemical reaction of the precursors on the surface of the substrate, so that it is possible to deposit a nano thin film having excellent thickness uniformity on a wide substrate. In addition, atomic layer deposition can deposit a conformal thin film in a complex three-dimensional structure. Therefore, atomic layer deposition is an indispensable deposition technique for nano-scale semiconductor devices, large area displays and solar cell devices, and complex nano-scale optoelectronic devices. It is attracting attention.

However, such an atomic layer deposition has an advantage of being able to grow an excellent step coverage and a high quality thin film, but has a limit of low productivity. In order to overcome the limitations of low productivity of atomic layer deposition, many studies such as cyclic CVD, plasma enhanced ALD (PEALD), batch type ALD, and roll-to-roll ALD have been conducted have.

Among these many studies, roll to roll ALD is a method of growing a thin film by growing a thin film on a flexible substrate through a continuous process through stable movement of a deposition object (typically a flexible substrate, for example) moving from roll to roll Method.

In general, the thickness of the grown thin film of ALD is determined by the cycle in which the process proceeds. A cycle is a periodic repetition of the ALD process. ALD is a cycle of four cycles in which the four processes of source / purge / reactant / purge are periodically repeated periodically. The way to control the cycle of these cycles is divided into temporal and spatial aspects.

The time-divisional ALD system can control the thickness of the grown thin film by controlling the cycle by temporal division through adjustment of the pulse time and the purge time under the same spatial domain. Time-divisional ALD systems are used in most common ALD systems.

On the other hand, a space-divisional ALD system refers to a method of controlling the thickness of a thin film by controlling the cycle by dividing the space where the source, reaction, and purging processes occur. These space-divisional ALD systems are commonly used in roll-to-roll ALD systems. The reason for this is that there is some difficulty in controlling the cycle through temporal partitioning due to the nature of the roll-to-roll ALD system (the same mobility of the moving flexible substrate is required). For this reason, the method of controlling the cycle is used by dividing the space of the pulse process and the space of the purge process.

FIG. 1 is a schematic view showing a roll-to-roll type atomic layer deposition apparatus according to an embodiment of the prior art. 1, the prior art roll-to-roll type atomic layer deposition equipment is characterized in that a plurality of rotating roller members 40 are arranged in a row on both sides in a processing space 30 defined by the partitioning means 20 And the film F starting from the unwinding roller 50 provided outside the process space 30 enters the process space 30 and travels on the plurality of rotation roller members 40, A layer deposition process is performed, and the layer is rolled up by the take-up roller 60 and discharged. At this time, the space where the take-up roller (50) and the take-up roller (60) are installed is partitioned from the process space (30) and filled with purge gas.

However, in the roll-to-roll atomic layer deposition apparatus having such a structure, as shown in FIG. 1, since the plurality of rotating roller members 40 are exposed to the deposition space 30, a thin film is deposited on the surface of the auxiliary roller member The thin film thus deposited is a cause of particle generation, causing a serious problem in practical use of the device.

SUMMARY OF THE INVENTION The present invention has been made in an effort to solve the problems of the prior art by providing a pair of film take-up rollers, in which the film is moved through the source-purging process space and the reaction- The present invention is to provide a roll-to-roll atomic layer deposition apparatus in which a processable film width is freely formed and a complete atomic layer deposition process is not completed in one space, so that a cleaning cycle of the chamber is long and productivity is high.

According to an aspect of the present invention, there is provided an apparatus for depositing a roll-to-roll atomic layer, comprising: a source for depositing a source material, which is a part of an atomic layer deposition process, Deposition chamber; A reactive deposition unit installed in communication with the source deposition unit and performing a reactive deposition and a first purge step, which are a part of the atomic layer deposition process, while the film passing through the source deposition unit moves in a predetermined space; A gas passage preventing film passage provided between the source gas deposition chamber and the reactive deposition chamber to prevent movement of both gases while passing the film; And a heater disposed in the source deposition facility, the reaction deposition facility and the gas passage prevention film passage to maintain the temperature inside the source deposition facility, the reaction deposition facility, and the gas passage prevention film passage at a processing temperature .

In the present invention, the source deposition process unit may include: a first chamber main body having a constant internal space; A first film winder installed in an inner space of the first chamber body for winding or winding a film to be processed and supplying or recovering the film in one direction; A first gas supply unit installed at one side of the first chamber body for supplying a source gas or a purge gas in a direction perpendicular to a moving direction of the film; A first gas exhaust unit installed at the other side of the first chamber body for exhausting a source gas or a purge gas supplied by the first gas supply unit; And a first connection passage portion formed at a side of the first chamber body on the side of the reaction deposition processing portion and providing a space in which the film supplied from the first film winding portion moves to the gas passage preventive film passage portion .

In addition, in the present invention, the reactive deposition process unit may include: a second chamber body having a constant internal space; A second film winder installed in an inner space of the second chamber body for winding or winding a film to be processed so as to supply or recover the film in one direction; A second gas supply unit installed at one side of the second chamber body for supplying reactive gas or purge gas in a direction perpendicular to the moving direction of the film; A second gas exhaust unit installed at the other side of the second chamber body for exhausting the reactive gas or the purge gas supplied by the second gas supply unit; And a second connection passage portion formed at a side of the second chamber body on the side of the source evaporation control portion and providing a space through which the film supplied from the second film winding portion moves to the gas passage preventive film passage portion .

Further, in the present invention, the gas passage-preventing film passage portion may be provided between the first and second connection passage portions, and may have a slit formed to have a larger width of the film thickness so that the film passes through a minimum clearance gap It is preferable that it is a slit block.

Meanwhile, in the present invention, the gas passage-preventing film passing portion may be provided between the first and second connecting passage portions, and may have a slit formed to have a larger width of the film thickness so that the film passes through the minimum clearance gap A first slit block; A second slit block spaced apart from the first slit block and having a slit formed to have a greater width of the film thickness so that the film passes through the minimum gap; And a buffer space part provided in the space between the first and second slit blocks and filled with the purge gas.

Further, in the present invention, the gas passage-preventing film passage portion may be provided between the first and second connection passage portions, and may have a slit formed to have a larger width of the film thickness so that the film passes through a minimum clearance gap A first slit block; A second slit block spaced apart from the first slit block and having a slit formed to have a greater width of the film thickness so that the film passes through the minimum gap; A buffer space formed in the space between the first and second slit blocks and having a buffer space therein; And a first and a second purge gas spraying parts formed in the first and second slit blocks, respectively, for spraying a purge gas to a region of the first and second slit blocks through which the film passes.

Further, in the roll-to-roll atomic layer deposition apparatus according to the present invention, a path for moving the film, which enters into the first connection passage portion or is discharged from the first connection passage portion, is formed between the first film winding portion and the first connection passage portion It is preferable that a first additional roller for guiding the movement path of the film is further provided.

And a guide member for guiding the movement path of the film so that the movement path of the film entered into the second connection passage portion or discharged from the second connection passage portion is the same between the second film winding portion and the second connection passage portion, Preferably, two additional rollers are further provided.

According to another aspect of the present invention, there is provided a method of fabricating a semiconductor device, comprising: a source deposition step of performing a source deposition step, which is a part of an atomic layer deposition process, A reactive deposition unit installed in communication with the source deposition unit and performing a reactive deposition step of the atomic layer deposition process while the film passing through the source deposition unit moves in a predetermined space; A buffer space is formed by a pair of buffer slit blocks which are provided between the source evaporation hole and the reactive evaporation hole and through which the film is allowed to pass while preventing movement of both gases, A buffer space portion for performing a purge step; And a heater disposed at the source deposition unit, the reactive deposition unit, and the buffer space unit to maintain the temperature of the source deposition unit, the reactive deposition unit, and the buffer space unit at a processing temperature, A deposition apparatus is also provided.

In the present invention, the source deposition process unit may include: a first process chamber having a process space parallel to a moving film; A source gas supply unit installed in the first process chamber and supplying a source gas into the first process chamber; A first film winding chamber communicating with one side of the first processing chamber and having a constant internal space; A first film take-up unit installed inside the first film take-up chamber and continuously supplying the film to the first process chamber or continuously receiving the film from the first process chamber; A first gas supply unit installed in the first film take-up chamber and supplying an inert gas such that a pressure inside the first film take-up chamber is higher than a pressure inside the first film processing chamber; And a first slit block provided between the first process chamber and the first film take-up chamber and having a slit formed to have a larger width of the film thickness so as to allow the film to pass through the minimum clearance gap Do.

In the present invention, the first film take-up chamber further includes a first additional roller for guiding the movement path of the film so that the movement path of the film entering the first process chamber or discharging from the first process chamber is the same .

In addition, the reactive deposition process unit may include a second process chamber having a process space parallel to a moving film; A reaction gas supply unit installed in the second process chamber and supplying a reaction gas into the second process chamber; A second film winding chamber communicating with one side of the second process chamber and having a constant internal space; A second film winding unit installed in the second film winding chamber and continuously supplying the film to the second process chamber or continuously receiving the film from the second process chamber; A second gas supply unit installed in the second film take-up chamber, for supplying an inert gas such that a pressure inside the second film take-up chamber is higher than a pressure inside the second process chamber; And a second slit block provided between the second process chamber and the second film take-up chamber, the slit block having a slit formed to have a larger width of the film thickness so that the film passes through the minimum clearance gap Do.

In the present invention, it is preferable that the source gas supply unit and the reaction gas supply unit further include a purge gas supply unit for supplying a purge gas to the first process chamber and the second process chamber.

In the present invention, it is preferable that the buffer slit block and the first and second slit blocks are further provided with a purge gas supply unit for supplying purge gas.

In the present invention, it is preferable that the buffer space part further includes a purge gas supply part for supplying a purge gas into the buffer space part.

According to the roll-to-roll atomic layer deposition apparatus of the present invention, the apparatus is simply provided with a pair of film take-up rollers, by which the film is subjected to atomic layer deposition The process is performed by a combination of the space division and the time division so that the width of the processable film is free, the structure of the apparatus is simple, and the footprint is small.

In addition, the roll-to-roll atomic layer deposition apparatus of the present invention does not perform a complete atomic layer deposition process in one space, and thus has a long cleaning period of the chamber and high-speed thin-film deposition.

1 is a view showing a structure of a conventional roll-to-roll atomic layer deposition apparatus.
FIGS. 2 and 3 are views showing the structure of a roll-to-roll atomic layer deposition apparatus according to an embodiment of the present invention.
4 is a partial cross-sectional view showing a structure of a slit block according to an embodiment of the present invention.
5 is a view showing a structure of a roll-to-roll atomic layer deposition apparatus according to another embodiment of the present invention.
6 is a view showing the structure of a roll-to-roll atomic layer deposition apparatus according to another embodiment of the present invention.
7 is a view showing a structure of a roll-to-roll atomic layer deposition apparatus according to another embodiment of the present invention.
8 is a view showing a structure of a roll-to-roll atomic layer deposition apparatus according to another embodiment of the present invention.
9 is a view showing a structure of a roll-to-roll atomic layer deposition apparatus according to another embodiment of the present invention.
10 is a view showing the structure of a roll-to-roll atomic layer deposition apparatus according to another embodiment of the present invention.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

≪ Example 1 >

2 and 3, the roll-to-roll atomic layer deposition apparatus 100 according to the present embodiment includes a source deposition unit 110, a reactive deposition unit 120, a gas-transporting-type film passage unit 130 And a heater portion (not shown in the drawing). In this embodiment, the source deposition unit 110 and the reactive deposition unit 120 are disposed symmetrically with respect to the gas passage preventive film passing unit 130, And is disposed inside or outside the hollow portion 110, the reactive evaporation portion 120, and the gas migration preventing film passage portion 130. The inside of the source vapor deposition unit 110, the reactive deposition unit 120, and the gas passage preventive film passage unit 130 is maintained at a processing temperature by the heater unit. Here, 'process temperature' refers to a temperature suitable for the atomic layer deposition temperature, and may be, for example, about 50 ° C.

As shown in FIGS. 2 and 3, the source deposition unit 110 performs a source gas deposition step and a second purge step, which are a part of the atomic layer deposition process, while the film to be subjected to the atomic layer deposition process moves in a predetermined space Lt; / RTI > Wherein the source gas depositing step is a step of supplying and depositing a source gas on the film as a first step of the atomic layer deposition process and the second purge step is a final step of the atomic layer deposition process, To remove and purge the remaining reaction gas.

2 and 3, the source deposition unit 110 includes a first chamber main body 111, a first film winding unit 112, a first gas supply unit 113 , A first gas exhaust part 114, and a first connection passage part 115. [ First, the first chamber body 111 includes a chamber having a predetermined internal space, and provides a space in which the first film winding unit 112 is installed. Here, the first chamber body 111 may have a structure in which one side is open, as shown in FIG. 2, and the open side of the first chamber body 111 is cut off through the blocking plate 111a. If such a structure is detachable, cleaning of the inside of the chamber body 111 can be easily performed.

At this time, the first film winding unit 112, the first gas supply unit 113, and the like are preferably installed on the blocking plate 111a.

2 and 3, the first film winding unit 112 is installed in an inner space of the first chamber body 111, and a film F to be processed is wound, It is a component that supplies or recovers in one direction. Therefore, the first film winding unit 112 may include a first winding roller 112a for winding the film and a first rotating unit 112b for rotating the first winding roller 112a in the forward direction or the reverse direction. 2, the first rotation part 112b is installed on the outer side of the blocking plate 111a and has a distal end exposed to the outside of the blocking plate 111a among the first winding rollers 112a, Lt; / RTI >

3, a first additional roller 116 may be further disposed between the first film take-up portion 112 and the first connection passage portion 115 in this embodiment. The first additional roller 116 moves the film F so that the moving path of the film F entering the first connecting passage portion 115 or discharged from the first connecting passage portion 115 is constant. It is a component that guides the route.

In the absence of the first additional roller 116, the amount of the film F wound on the first take-up roller 112a is changed, so that the movement path of the film may be minutely changed, thereby impairing the consistency of the process. Therefore, the first additional roller 116 is further provided to allow the film F to pass through the same path to ensure process consistency.

2, the first gas supply unit 113 is installed on one side of the first chamber body 111 and is connected to the source gas or the source gas in a direction perpendicular to the moving direction of the film F. [ And is a component for supplying purge gas. 2, the first gas supply unit 113 includes a showerhead 113a for injecting a gas into a space through which the film passes, a gas supply unit for supplying a source gas and a purge gas to the showerhead 113a And a supply line 113b.

The first gas supply unit 113 configured as described above is configured such that the source gas is injected into the first chamber body 111 while the film F moves to the right side in the drawing to perform the source deposition step as the first step of the atomic layer deposition process The supply of the source gas is stopped and the purge gas is injected into the first chamber main body 111 during the movement of the film to the left after the film is moved to the right side to complete the second purge step .

2, the first gas exhaust part 114 is installed on the other side of the first chamber body 111, that is, on the opposite side of the first gas supply part 113, And is a component for discharging the source gas or the purge gas supplied by the gas supply unit 113.

3, the first connection passage part 115 is formed on a side of the first chamber main body 111 on the side of the reactive deposition processing part, and the first connection part 115 is provided in the first film winding part 112 (F) is moved to the gas-flow-blocking-type film passage portion (130). Unlike the first chamber main body 111, the first connection passage part 115 is provided so as to have a narrow width to allow the film to pass therethrough, and may not be provided in a specific case.

2 and 3, the reactive deposition unit 120 is installed in communication with the source deposition unit 110, and the film F is irradiated with light from the source deposition unit 110, Is a component for performing the reactive gas deposition step and the first purge step, which are a part of the atomic layer deposition process, while moving in the predetermined space. Here, the reactive gas deposition step is a third step of the atomic layer deposition step, in which a reaction gas is supplied to a film having undergone the source gas deposition step and the first purge step to spray a reaction gas onto the film to react The first purge step is a second step of the atomic layer deposition process, in which excess purge gas is supplied to the film subjected to the source gas deposition step to discharge and purge the remaining source gas.

2 and 3, the reaction chamber 120 may include a second chamber body 121, a second film winding unit 122, a second gas supply unit 123, A second gas exhaust part 124 and a second connection passage part 125. [ The specific configuration of the second chamber main body 121, the second film winding part 122, the second gas supply part 123, the second gas evacuation part 124, and the second connection passage part 125 is not particularly limited, The first gas supply part 113, the first gas exhaust part 114 and the first connection passage part 115. The first gas supply part 113, the first gas exhaust part 114, and the first connection passage part 115 are similar to the first chamber main body 111, the first film winding part 112, Therefore, a repetitive description thereof will be omitted.

2, the second gas supply unit 123 has a second gas supply line 123b capable of supplying a reactive gas and a purge gas, and the second gas supply line 123b, The second purge step, which is the second step of the atomic layer deposition process, is performed by injecting an excessive amount of purge gas into the second chamber body 121, and while the film is moved to the left again, To perform a reactive gas deposition step, which is the third step of the atomic layer deposition process.

3, a second additional roller 126 is additionally provided between the second film take-up part 122 and the second connection passage part 125. As shown in FIG. The second additional roller 126 is disposed so that the path of the film F entering the second connection passage portion 125 or discharged from the second connection passage portion 125 is the same, To ensure process consistency.

2 and 3, the gas passage preventive film passage unit 130 is installed between the source deposition unit 110 and the reactive deposition unit 130, Is a component that prevents the movement of both gases while passing through. The source gas supplied to the source deposition unit 110 by the gas passage preventive film passage unit 130 can not move to the reactive deposition unit 120 and is supplied to the process deposition unit 120 The reaction gas does not move to the source deposition unit 110.

3 and 4, the film transfer preventing film passing portion 130 is provided between the first and second connecting passage portions 115 and 125, and the film F May have a slit formed with a larger width of the film thickness so as to pass through the minimum clearance gap. At this time, the interval d2 of the slit block 130 is preferably set to be about 2 to 3 times the film thickness d1 so that almost no clearance gap is formed between the film F and the slit block 130 .

In addition, an additional roller (not shown) may be further provided in the gas passage preventive film passage portion 130 to keep the movement path of the film constant.

In the roll-to-roll atomic layer deposition apparatus 100 having this structure, the source deposition step and the first purge step, which are the first half of the atomic layer deposition process, are performed while the film F proceeds from left to right, F) from the right to the left, the reactive deposition step and the second purging step, which are the latter half of the atomic layer deposition step, are performed to complete the one-cycle atomic layer deposition process as a whole. Of course, the cycle of such an atomic layer deposition process may be repeated a number of times to form a film of the desired thickness on the film.

≪ Example 2 >

 5, the roll-to-roll atomic layer deposition apparatus 200 according to the present embodiment includes a source deposition unit 210, a reactive deposition unit 220, and a gas-movement-preventing film passage unit 230 May be simply configured. In this embodiment, the source deposition unit 210 and the reactive deposition unit 220 are disposed symmetrically with respect to the gas passage preventive film passage unit 230.

In the present embodiment, the source deposition unit 210 and the reactive deposition unit 220 have substantially the same configuration as those of the first embodiment, and thus will not be described repeatedly. Meanwhile, in the present embodiment, the gas-migration-preventing film passage portion 230 performs the same function as that of Embodiment 1, but in order to more reliably block gas passage, Slit blocks 231 and 232, and a buffer space portion 233.

5, the first slit block 231 is disposed between the first and second connection passages 215 and 225, and the film F passes through the minimum clearance gap And a slit formed with a larger width of the film thickness. The second slit block 232 is spaced apart from the first slit block 231 by a predetermined distance and is formed to have a greater width of the film thickness so that the film F passes through a minimum clearance gap And is a component having a slit.

The buffer space 233 is formed between the first and second slit blocks 231 and 232 when both sides of the first and second slit blocks 231 and 232 leave a fine gap. A predetermined space is formed in the buffer space part 233 and purge gas is supplied to maintain the pressure of the buffer space part 233 higher than the pressure of the first and second connection path parts 215 and 225. Since the possibility of the gas of the first and second connection passage portions 215 and 225 flowing into the buffer space portion 233 is extremely low, Movement can be prevented.

Accordingly, the buffer space 233 is provided with a purge gas supply line 234 capable of supplying purge gas.

≪ Example 3 >

6, the roll-to-roll atomic layer deposition apparatus 300 according to the present embodiment includes a source deposition unit 310, a reactive deposition unit 320, and a gas-movement-preventing film passage unit 330 May be simply configured. In this embodiment, the source deposition unit 310 and the reactive deposition unit 320 are symmetrically disposed about the gas passage-preventing film passage 333.

Here, the source deposition unit 310, the reactive deposition unit 320, and the gas-movement-preventing film passage unit 330 have substantially the same configuration as those of the second embodiment, and thus will not be described repeatedly. 6, the first and second slit blocks 331 and 332 and the buffer space portion (not shown) may be formed in the same manner as in the first embodiment, 333).

The purge gas supply line 334 is installed in the buffer space 333 and the purge gas is filled in the buffer space 333 so that the source gas deposition unit 310 and the reactive deposition unit 320, Unlike the second embodiment, only the source gas supply line or the reaction gas supply line may be provided.

<Example 4>

7, the roll-to-roll atomic layer deposition apparatus 400 according to the present embodiment includes a source deposition unit 410, a reactive deposition unit 420, and a gas-movement-preventing film passage unit 430 May be simply configured. In the present embodiment, the source deposition unit 410 and the reactive deposition unit 420 are disposed symmetrically with respect to the gas passage preventive film passage 430 as a center.

Herein, the source deposition unit 410, the reactive deposition unit 420, and the gas-movement-preventing film passage unit 430 have substantially the same configuration as those of the third embodiment, and thus will not be described repeatedly. 7, the first and second slit blocks 431 and 432 and the buffer space portion 430 may be formed in the same manner as in the first embodiment. 433, and first and second purge gas injection units 434, respectively.

The first and second slit blocks 431 and 432 and the buffer space portion 433 have substantially the same configuration as those of Embodiment 2 and the first and second purge gas injection portions 434 are formed as shown in FIG. The first and second slit blocks 431 and 432 are formed in the first and second slit blocks 431 and 432 and inject purge gas into the region of the first and second slit blocks 431 and 432 through which the film passes.

Even in the case where the first and second purge gas spraying parts 434 are separately provided as described above, it is possible to more reliably block gas movement between the source deposition control part 410 and the reactive deposition part 420 as in the third embodiment There is an advantage.

&Lt; Example 5 >

The roll-to-roll atomic layer deposition apparatus 500 according to the present embodiment includes a source deposition unit 510, a reactive deposition unit 520, a buffer space unit 530, and a heater unit (not shown) (Not shown).

First, the source deposition unit 510 is a component for performing a source gas deposition step, which is a first step in an atomic layer deposition process, in which a film to be subjected to an atomic layer deposition process moves in a predetermined space. 8, the source gas deposition unit 510 is connected to the first process chamber 511, the source gas supply unit 512, the first film take-up chamber 513, A winding unit 514, a first gas supply unit 515, and a first slit block 516.

Here, the first process chamber 511 is a component having a process space parallel to the continuously moving film, as shown in FIG. The source gas supply unit 512 is installed in the first process chamber 511 to supply the source gas to the process space. Next, as shown in FIG. 8, the first film take-up chamber 513 is formed to communicate with one side of the first process chamber 511 and has a constant internal space.

The first process chamber 511 and the first film take-up chamber 513 are connected to each other. However, the first process chamber 511 and the first film take-up chamber 513 are spaced apart by the first slit block 516. 8, the first slit block 516 is installed between the first process chamber 511 and the first film take-up chamber 513, and the film F has a minimum gap And a slit formed to have a larger width of the film thickness so as to pass therethrough.

And the first film winding unit 514 is installed inside the first film winding chamber 513. [ Therefore, the first film take-up chamber 513 has a sufficient space for the first film winding unit 514 to be installed and operated. 8, the first film take-up unit 514 is installed inside the first film take-up chamber 513 and continuously supplies the film to the first process chamber 511, And takes a role of continuously receiving the film from the process chamber 511.

8, the first gas supply unit 515 is installed in the first film take-up chamber 513, and the pressure inside the first film take-up chamber 513 is adjusted to a predetermined pressure in the first process chamber 511). &Lt; / RTI &gt; When the pressure of the first film take-up chamber 513 is maintained higher than the pressure of the first process chamber 511 by the first gas supply unit 515, the source gas of the first process chamber 511 is wound around the first film take- It does not move to the chamber 513.

8, the movement path of the film F that enters the first process chamber 511 or is discharged from the first process chamber 511 is moved to the first film take- It is preferable to further include a first additional roller 517 for guiding the movement path of the film so that the consistency of the process can be ensured.

8, the reaction deposition unit 520 is installed in communication with the source deposition unit 510, and the film F passed through the source deposition unit 510 has a constant Is a component that performs a reactive gas deposition step that is part of the atomic layer deposition process while moving in space. For this, in the present embodiment, the reactive deposition and deposition unit 520 includes a second process chamber 521, a reactive gas supply unit 522, a second film winding chamber 523, a second film winding unit 524, A second gas supply unit 525, and a second slit block 526. [

Here, the second process chamber 521, the reaction gas supply unit 522, the second film take-up chamber 523, the second film take-up unit 524, the second gas supply unit 525, and the second slit block 526 The first film take-up unit 514, the first gas supply unit 515, and the first slit block 516. The first film winding unit 513, the first film winding unit 514, the first gas supply unit 515, and the first slit block 516 And therefore, a repetitive description thereof will be omitted.

Unlike the source gas supply unit 512, the reaction gas supply unit 522 supplies the reaction gas to the second process chamber 521.

8, the buffer space part 530 is provided between the source deposition part 510 and the reactive deposition part 520. The buffer space part 530 is provided between the source deposition part 510 and the reactive deposition part 520, Purge step by supplying purge gas to the buffer space 533 while forming a buffer space 533 by a pair of buffer slit blocks 531 and 532 for preventing movement of the buffer space 533, to be.

That is, the buffer space part 530 has a buffer space 533 formed by a pair of buffer slit blocks 531 and 532 installed on both sides, and the purge gas is supplied to the buffer space 533. A gas supply unit 534 is provided. The pressure in the buffer space part 530 is maintained higher than the pressure in the first and second process chambers 511 and 521 so that the gas existing in the first and second process chambers 511 and 521 flows into the buffer space part 530). &Lt; / RTI &gt;

In the present embodiment, the heater unit has substantially the same structure and function as those of the first embodiment, and thus a repetitive description thereof will be omitted.

The roll-to-roll atomic layer deposition apparatus 500 according to this embodiment having such a structure can form a small process and reaction space unlike those of the first to fourth embodiments, thereby improving the deposition efficiency of the source and the reactive gas .

&Lt; Example 6 >

The roll-to-roll atomic layer deposition apparatus 600 according to the present embodiment includes a source deposition unit 610, a reactive deposition unit 620, and a buffer space unit 630, as shown in FIG. 9 . Here, the source deposition unit 610, the reactive deposition unit 620, and the buffer space unit 630 have substantially the same configuration as those of the fifth embodiment, and thus, a repetitive description thereof will be omitted.

Unlike the fifth embodiment, the source gas deposition unit 610 and the reactive gas deposition unit 620 supply purge gas to the first process chamber 611 and the second process chamber 621 in the present embodiment, A purge gas supply unit 618, 628 is provided. When the purge gas supply units 618 and 628 for supplying the purge gas to the first and second process chambers 611 and 621 are further provided, a sufficient purge amount and time are provided as compared with the fifth embodiment, There are advantages to be gained.

&Lt; Example 7 >

The roll-to-roll atomic layer deposition apparatus 700 according to the present embodiment includes a source deposition unit 710, a reactive deposition unit 720, and a buffer space unit 730, as shown in FIG. 10 . Here, the source deposition unit 710, the reactive deposition unit 720, and the buffer space unit 730 have substantially the same configuration as those of the fifth embodiment, and thus a repetitive description thereof will be omitted.

10, a purge gas supply unit 740 for supplying purge gas is further provided to the buffer slit blocks 731 and 732 and the first and second slit blocks 716 and 726 in this embodiment . When the purge gas supply unit 740 is installed in each slit block, the space between the film F and the slit block can be more reliably blocked.

100: A roll-to-roll atomic layer deposition apparatus according to an embodiment of the present invention
110: source deposition unit 120: reaction deposition unit
130: gas-moving type film passage portion
F: Film

Claims (16)

A source deposition process for performing a source deposition and a second purge step, which are part of the atomic layer deposition process, while the film to be subjected to the atomic layer deposition process moves in a predetermined space;
A reactive deposition unit installed in communication with the source deposition unit and performing a reactive deposition and a first purge step, which are a part of the atomic layer deposition process, while the film passing through the source deposition unit moves in a predetermined space;
A gas passage preventing film passage provided between the source gas deposition chamber and the reactive deposition chamber to prevent movement of both gases while passing the film;
And a heater disposed in the source deposition facility, the reaction deposition facility and the gas passage prevention film passage to maintain the temperature inside the source deposition facility, the reaction deposition facility, and the gas passage prevention film passage at a processing temperature Wherein the roll-to-roll atomic layer deposition apparatus comprises: The method according to claim 1,
A first chamber body having a constant internal space;
A first film winder installed in an inner space of the first chamber body for winding or winding a film to be processed and supplying or recovering the film in one direction;
A first gas supply unit installed at one side of the first chamber body for supplying a source gas or a purge gas in a direction perpendicular to a moving direction of the film;
A first gas exhaust unit installed at the other side of the first chamber body for exhausting a source gas or a purge gas supplied by the first gas supply unit;
And a first connection passage portion formed at a side of the first chamber body on the side of the reaction deposition processing portion and providing a space in which the film supplied from the first film winding portion moves to the gas passage preventive film passage portion Wherein the roll-to-roll atomic layer deposition apparatus is a roll-to-roll atomic layer deposition apparatus. The method according to claim 2,
A second chamber body having a constant internal space;
A second film winder installed in an inner space of the second chamber body for winding or winding a film to be processed so as to supply or recover the film in one direction;
A second gas supply unit installed at one side of the second chamber body for supplying reactive gas or purge gas in a direction perpendicular to the moving direction of the film;
A second gas exhaust unit installed at the other side of the second chamber body for exhausting the reactive gas or the purge gas supplied by the second gas supply unit;
And a second connection passage portion formed at a side of the second chamber body on the side of the source evaporation control portion and providing a space through which the film supplied from the second film winding portion moves to the gas passage preventive film passage portion Wherein the roll-to-roll atomic layer deposition apparatus is a roll-to-roll atomic layer deposition apparatus. The gas passage prevention film passing portion according to claim 3,
And a slit block provided between the first and second connection passage portions and having a slit having a greater width of the film thickness so as to allow the film to pass through the minimum clearance gap. . The gas passage prevention film passing portion according to claim 3,
A first slit block provided between the first and second connecting passage portions and having a slit formed in a larger width of the film thickness so that the film passes through at least a clearance gap;
A second slit block spaced apart from the first slit block and having a slit formed to have a greater width of the film thickness so that the film passes through the minimum clearance gap;
And a buffer space part provided in a space between the first and second slit blocks and filled with the purge gas in the inner space. The gas passage prevention film passing portion according to claim 3,
A first slit block provided between the first and second connecting passage portions and having a slit formed in a larger width of the film thickness so that the film passes through at least a clearance gap;
A second slit block spaced apart from the first slit block and having a slit formed to have a greater width of the film thickness so that the film passes through the minimum clearance gap;
A buffer space formed in the space between the first and second slit blocks and having a buffer space therein;
And a first and a second purge gas spraying parts formed respectively in the first and second slit blocks for spraying a purge gas to a region of the first and second slit blocks through which the film passes, Atomic layer deposition apparatus. 3. The image forming apparatus according to claim 2, wherein between the first film winding portion and the first connection passage portion,
Further comprising a first additional roller for guiding a moving path of the film so that the film travels in the first connection passage portion or the first connection passage portion is the same. . The image forming apparatus according to claim 3, wherein between the second film take-up portion and the second connection passage portion,
Further comprising a second additional roller for guiding the movement path of the film such that the film passes through the second connection passage portion or is discharged from the second connection passage portion. . A source deposition process for performing a source deposition and a second purge step, which are part of the atomic layer deposition process, while the film to be subjected to the atomic layer deposition process moves in a predetermined space;
A reactive deposition unit installed in communication with the source deposition unit and performing a reactive deposition and a first purge step, which are a part of the atomic layer deposition process, while the film passing through the source deposition unit moves in a predetermined space;
A buffer space is formed by a pair of buffer slit blocks which are provided between the source evaporation hole and the reactive evaporation hole and through which the film is allowed to pass while preventing movement of both gases, A buffer space portion for performing a purge step;
A roll deposition chamber including a source deposition chamber, a reaction deposition chamber, and a buffer space, wherein the source deposition chamber, the reaction deposition chamber, and the buffer space are maintained at a processing temperature, Device. 10. The method according to claim 9,
A first process chamber having a process space parallel to the film being moved;
A source gas supply unit installed in the first process chamber and supplying a source gas into the first process chamber;
A first film winding chamber communicating with one side of the first processing chamber and having a constant internal space;
A first film take-up unit installed inside the first film take-up chamber and continuously supplying the film to the first process chamber or continuously receiving the film from the first process chamber;
A first gas supply unit installed in the first film take-up chamber and supplying an inert gas such that a pressure inside the first film take-up chamber is higher than a pressure inside the first film processing chamber;
And a first slit block provided between the first process chamber and the first film take-up chamber and having a slit having a greater width of the film thickness so that the film passes through at least a minimum clearance gap Wherein the roll-to-roll atomic layer deposition apparatus comprises: The image forming apparatus according to claim 10, wherein the first film take-
Further comprising a first additional roller for guiding the movement path of the film so that the movement path of the film entering the first process chamber or the first process chamber is the same. 11. The method of claim 10,
A second processing chamber having a processing space parallel to the film being moved;
A reaction gas supply unit installed in the second process chamber and supplying a reaction gas into the second process chamber;
A second film winding chamber communicating with one side of the second process chamber and having a constant internal space;
A second film winding unit installed in the second film winding chamber and continuously supplying the film to the second process chamber or continuously receiving the film from the second process chamber;
A second gas supply unit installed in the second film take-up chamber, for supplying an inert gas such that a pressure inside the second film take-up chamber is higher than a pressure inside the second process chamber;
And a second slit block provided between the second process chamber and the second film take-up chamber, the slit block having a slit having a larger width of the film thickness so that the film passes through at least a minimum clearance gap Wherein the roll-to-roll atomic layer deposition apparatus comprises: 13. The apparatus according to claim 12, wherein the second film take-
Further comprising a second additional roller for guiding the movement path of the film so that the movement path of the film entering the second process chamber or discharging from the second process chamber is the same. 13. The apparatus according to claim 12, wherein the source gas supply unit and the reaction gas supply unit include:
Further comprising a purge gas supply unit for supplying purge gas to the first process chamber and the second process chamber. 13. The method of claim 12,
Wherein the buffer slit block and the first and second slit blocks are further provided with a purge gas supply unit for supplying a purge gas. [13] The apparatus of claim 12,
And a purge gas supply unit for supplying a purge gas into the buffer space.

Images