TW202045753A - Cyclic epitaxy deposition system - Google Patents

Abstract

A cyclic epitaxy deposition system is provided. The cyclic epitaxy deposition system includes a reaction chamber, a transportation apparatus, and a gas distribution module. A substrate can be continuously transported by the transportation apparatus along a transportation path to pass through the reaction chamber. The gas distribution module is disposed in the reaction chamber and disposed above the transportation path. The gas distribution module includes a plurality of precursor gas nozzles and at least a purge gas nozzle so that at least a precursor gas and at least a purge gas can be guided to different regions of the substrate at the same time.

Description

Circulating epitaxy deposition system

The invention relates to an epitaxial deposition system, in particular to a cyclic epitaxial deposition system using the principle of atomic layer deposition.

Atomic layer deposition is a technology for growing high-quality thin films in a vapor phase. Compared with the film formed by chemical vapor deposition or physical vapor deposition, the film formed by atomic layer deposition has higher density, thickness uniformity and step coverage. In addition, the thickness of the film can be precisely controlled by atomic layer deposition. Therefore, atomic layer deposition technology has been applied in the manufacturing process of electronic components.

During atomic layer deposition, in each coating cycle, two different precursor gases are sequentially passed into the coating chamber at different time points instead of entering the coating chamber at the same time. Each time the introduced precursor gas undergoes a self-limiting reaction with the surface of the substrate, and only a single atomic layer is formed. After multiple coating cycles, a film with a specific thickness is formed.

Therefore, compared with chemical vapor deposition, the process time of using atomic layer deposition is longer, and it cannot be applied to continuous production at present, and is not suitable for manufacturing components or devices that require mass production.

The technical problem to be solved by the present invention is to provide a cyclic epitaxial deposition system to shorten the deposition time using atomic layer deposition technology.

In order to solve the above technical problems, one of the technical solutions adopted by the present invention is to provide a circulating epitaxial deposition system, which includes a coating chamber, a conveying device, and a gas splitting module. The conveying device is used for continuously conveying a substrate in and out of the coating cavity along a conveying path. The gas splitting module is arranged in the coating cavity and above the transmission path. The gas splitting module includes a plurality of precursor gas nozzles and a plurality of flushing gas nozzles that are not connected to each other, so as to guide at least one precursor gas and at least one flushing gas to different areas on the substrate at the same time.

One of the beneficial effects of the present invention is that the circulating epitaxial deposition system provided by the present invention can be used to continuously transport a substrate along a transport path into and out of the coating chamber through a “transport device” and “gas The splitter module includes a plurality of precursor gas nozzles and a plurality of flushing gas nozzles that are not connected to each other, so as to guide at least one precursor gas and at least one flushing gas to different areas on the substrate at the same time." , To continuously form a film layer on the substrate, which can shorten the deposition time, and is suitable for manufacturing components or devices that require mass production.

In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings about the present invention. However, the provided drawings are only for reference and description, and are not used to limit the present invention.

The following is a specific embodiment to illustrate the implementation of the "circular epitaxial deposition system" disclosed in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of the present invention. In addition, the drawings of the present invention are merely schematic illustrations, and are not drawn according to actual dimensions, and are stated in advance. The following embodiments will further describe the related technical content of the present invention in detail, but the disclosed content is not intended to limit the protection scope of the present invention.

It should be understood that although terms such as “first”, “second”, and “third” may be used herein to describe various elements, these elements should not be limited by these terms. These terms are mainly used to distinguish one element from another. In addition, the term "or" used in this document may include any one or a combination of more of the associated listed items depending on the actual situation.

Please refer to Figure 1. FIG. 1 shows a schematic diagram of a cyclic epitaxial deposition system according to an embodiment of the present invention. It should be noted that the cyclic epitaxial deposition system M1 of the embodiment of the present invention is based on the principle of atomic layer deposition (or atomic layer epitaxy) to form a specific film layer on a substrate S1, such as platinum layer, aluminum oxide Layer, nickel oxide layer, tin oxide layer, titanium oxide layer, iron oxide layer, zinc oxide layer, phosphorus lithium oxynitride layer (LiPON), titanium nitride layer, etc. In addition, the cyclic epitaxial deposition system M1 of the embodiment of the present invention can be applied to a continuous roll-to-roll process.

As shown in FIG. 1, the circulating epitaxial deposition system M1 includes at least one vacuum device 1. The vacuum equipment 1 includes a main chamber 10, a coating chamber 11, a pre-processing chamber 12, a conveying device 13 and an air extraction device 14.

The coating chamber 11 and the pretreatment chamber 12 are both arranged in the main chamber 10, and separate spaces are defined to prevent the gas passing into the pretreatment chamber 12 from interacting with the gas passing into the coating chamber 11 diffusion. In one embodiment, two opposite sides of the coating cavity 11 respectively have openings (not shown) for allowing the substrate S1 to enter and exit.

The conveying device 13 is used for continuously conveying the substrate S1 through the pre-processing cavity 12 and the coating cavity 11 along a conveying path. Furthermore, the pre-processing chamber 12 and the coating chamber 11 are arranged on the transmission path of the substrate S1. The substrate S1 is continuously conveyed by the conveying device 13. The different sections of the substrate S1, namely the section located in the pre-processing chamber 12 and the section located in the coating chamber 11, can simultaneously perform pre-processing and filming. Layer deposition.

The conveying device 13 includes a first rewinding and unwinding module 13a and a second rewinding and unwinding module 13b, and the first rewinding and unwinding module 13a and a second rewinding and unwinding module 13b define the transmission of the substrate S1 path. In detail, the substrate S1 is continuously conveyed to the pre-processing chamber 12 and the coating chamber 11 by the first retracting and unwinding module 13a, and the substrate S1 conveyed from the coating chamber 11 passes through Driven by the second retracting and unwinding module 13b, it is retracted.

In this embodiment, the first unwinding and unwinding module 13a may include a first unwinding and unwinding wheel and a first driving element connected to the axis of the first unwinding and unwinding wheel. Similarly, the second unwinding and unwinding module 13b may include a second unwinding and unwinding wheel and a second driving element connected to the axis of the second unwinding and unwinding wheel.

The first driving element and the second driving element receive instructions from the control module to respectively drive the first retracting and unwinding wheel and the second retracting and unwinding wheel (in a clockwise direction) to rotate at the same time, so that the winding is in the first The substrate S1 on the rewinding and unwinding wheel is continuously transferred to the pre-processing chamber 12 and the coating chamber 11.

In addition, the first retracting and unwinding module 13a may optionally include a first guide wheel to change the conveying direction of the substrate S1. Similarly, the second retracting and unwinding module 13b can optionally include a second guide wheel to change the direction of travel of the substrate S1 conveyed from the coating cavity 11.

It should be noted that in this embodiment, the first retracting and unwinding module 13a and the second retracting and unwinding module 13b can also change the moving direction of the substrate S1. Specifically, the first drive element and the second drive element receive instructions from the control module to drive the first rewinding and unwinding wheel and the second rewinding and unwinding wheel to rotate in opposite directions (counterclockwise) so that the substrate S1 can The coating cavity 11 reciprocates. In this way, multiple coating cycles can be repeated in the coating cavity to form multiple molecular layers on the substrate S1.

However, the conveying device 13 of the embodiment of the present invention is not limited to this. In another embodiment, the conveying device 13 includes a conveyor belt, which can continuously convey the workpiece to be plated into and out of the pre-processing chamber 12 and the coating chamber 11.

1, in the cyclic epitaxial deposition system M1 of the embodiment of the present invention, before the substrate S1 enters the coating chamber 11, it first enters the pretreatment chamber 12 for surface treatment. Accordingly, the pre-processing cavity 12 and the coating cavity 11 are sequentially arranged on the transmission path according to a moving direction of the substrate S1 and are isolated from each other.

In addition, the circulating epitaxial deposition system M1 further includes a plasma device 120 located in the pre-processing chamber 12. In one embodiment, oxygen, nitrogen, or argon may be introduced into the pre-processing chamber 12 to generate oxygen plasma, nitrogen plasma or argon plasma. In this way, when the substrate S1 is continuously transported into the pretreatment chamber 12, the plasma generated by the plasma device 120 can perform surface treatment on the surface of the substrate S1. The aforementioned surface treatment is, for example, cleaning the surface of the substrate S1 or adding functional groups on the surface of the substrate S1.

In addition, the circulating epitaxial deposition system M1 of this embodiment further includes a pre-processing heating module 121 which is disposed in the pre-processing chamber 12 and corresponding to the transport path to heat the substrate S1. It should be noted that the pre-processing cavity 12 and the plasma device 120 are optional components. In other embodiments, the pre-processing cavity 12 and the plasma device 120 may also be omitted.

Driven by the conveying device 13, the substrate S1 after the surface treatment can be moved from the pretreatment chamber 12 into the coating chamber 11 for film deposition. Please refer to FIG. 1 and FIG. 2. FIG. 2 shows a schematic diagram of a gas distribution module according to an embodiment of the present invention.

The gas splitting module 110 is disposed in the coating cavity 11 and located above the transmission path. It should be noted that the system diagram shown in FIG. 1 is only an example, and is not intended to limit the configuration between the plasma device 120 and the gas distribution module 110. In one embodiment, the plasma device 120 and the gas distribution module 110 in the pre-processing chamber 12 are arranged along a horizontal direction. In another embodiment, the arrangement direction of the plasma device 120 and the gas distribution module 110 forms an angle. In other words, the surface to be processed of the substrate S1 in the pretreatment chamber 12 and another part of the surface to be processed in the coating chamber 11 of the substrate S1 face different directions.

The gas distribution module 110 includes a plurality of precursor gas nozzles 110a, 110c and at least one flushing gas nozzle 110b (a plurality of which are shown in the figure), which are not connected to each other, so that at least one precursor gas and at least one The flushing gas is respectively guided to different areas on the substrate S1.

That is, in the cyclic epitaxial deposition system M1 of the embodiment of the present invention, different precursor gases and flushing gases pass through the corresponding precursor gas nozzles 110a, 110c and the corresponding flushing gas nozzle 110b at the same time. Pass into the coating cavity 11.

In this embodiment, the plurality of precursor gas nozzles 110a, 110c includes a first precursor gas nozzle 110a for guiding a first precursor gas, and a first precursor gas nozzle 110a for guiding a second precursor gas Two precursor gas nozzles 110c. The first precursor gas and the second precursor gas may be different types of gases to form a monolayer on the substrate S1. For example, to form a titanium nitride layer on the substrate S1, the first precursor gas is titanium tetrachloride (TiCl ₄ ), the second precursor gas is ammonia (NH ₃ ), and the flushing gas is inert Gas, such as: Argon (Ar).

In the embodiment of FIG. 1, three gas distribution modules 110 are shown as an example for description. In addition, each gas distribution module 110 may include multiple nozzles (6 as an example shown in FIG. 1), and the multiple nozzles include at least one first precursor gas nozzle 110a, at least one flushing gas nozzle 110b, and at least one second nozzle. The precursor gas nozzle 110c, the first precursor gas nozzle 110a, the flushing gas nozzle 110b, and the second precursor gas nozzle 110c are sequentially arranged above the transport path along a moving direction of the substrate S1.

Accordingly, when the substrate S1 is continuously conveyed, a specific area of the substrate S1 will sequentially pass under the first precursor gas nozzle 110a, the flushing gas nozzle 110b, and the second precursor gas nozzle 110c to complete One coating cycle, and a monomolecular layer is formed on the specific area. Accordingly, when the substrate S1 is driven to move the specific area under the multiple gas distribution modules 110, multiple monolayers can be formed on the specific area. In the embodiment of FIG. 1 and FIG. 2, after the substrate S1 continuously passes under all the gas distribution modules 110, six coating cycles are completed.

In other words, the cyclic epitaxial deposition system M1 of the embodiment of the present invention basically still uses the principle of atomic layer deposition to form a film on the substrate S1. However, the difference from the existing atomic layer deposition equipment is that in the circulating epitaxial deposition system M1 of the embodiment of the present invention, the conveying device 13 is used to drive the substrate S1 to move, and the gas splitting module 110 can be used in the same The precursor gas required in each coating cycle is introduced into different areas of the substrate S1 over time.

It should be noted that in each gas distribution module 110, the number of precursor gas nozzles 110a, 110c and the number of flushing gas nozzles 110b are not limited to this, but a plurality of precursor gas nozzles (first precursor gas The nozzle 110a and the second precursor gas nozzle 110c) and the plurality of flushing gas nozzles 110b are alternately arranged.

In an embodiment, if the monolayer to be formed requires three precursor gases in each coating cycle, the gas splitting module 110 may further include three precursor gas nozzles. In other words, the gas splitting module 110 at least includes a first precursor gas nozzle, a second precursor gas nozzle, and a third precursor gas nozzle, and the first, second, and third precursor gas nozzles are based on the substrate The moving direction of S1 is set in sequence above the transmission path. Therefore, the embodiment of the present invention does not limit the number of precursor gas nozzles.

The precursor gas can pass through the corresponding precursor gas nozzles 110a and 110c to form a precursor gas distribution area above the substrate S1. Two precursor gas nozzles 110a and 110c respectively form two precursors on the substrate S1 The gas distribution areas do not overlap. Please refer to FIG. 2, in detail, the first precursor gas and the second precursor gas can pass through the corresponding first precursor gas nozzle 110a and the second precursor gas nozzle 110c, respectively, to be in different areas of the substrate S1 A first precursor gas distribution area P1 and a second precursor gas distribution area P2 are formed above. The first precursor gas distribution area P1 and the second precursor gas distribution area P2 do not overlap with each other. In this way, it can be avoided that the first precursor gas and the second precursor gas mutually diffuse before being adsorbed on the substrate S1.

Similarly, the flushing gas passes through the corresponding flushing gas nozzle 110b to form a flushing gas distribution area P3 above the substrate S1, and two precursor gas distribution areas (the first precursor gas distribution area P1 and the second precursor gas The distribution areas P2) are separated by at least one flushing gas distribution area. In other words, the flushing gas distribution area P3 is located between the first precursor gas distribution area P1 and the second precursor gas distribution area P2. The flushing gas can remove the excess first precursor gas above the substrate S1, and an inert gas such as argon can be selected.

In addition, the width of the bottom of each precursor gas nozzle (the first precursor gas nozzle 110a and the second precursor gas nozzle 110c) is tapered from top to bottom, so that the precursor gas flowing out through the nozzle can be quickly delivered To the surface of the substrate S1. In one embodiment, the shortest vertical distance d between the nozzles of the precursor gas nozzles 110a, 110c and the surface of the substrate S1 is between 0.1 cm and 2.0 cm. In this way, the precursor gas can be prevented from spreading in the horizontal direction before being sprayed on the substrate S1.

As shown in FIGS. 1 and 2, the cyclic epitaxial deposition system M1 of the embodiment of the present invention further includes a heating module 111. The heating module 111 is disposed in the coating cavity 11 and located under the transmission path to heat the substrate S1 to a specific reaction temperature. In this embodiment, the heating module 111 includes a plurality of heaters 111a-111c, which can heat different sections of the substrate S1 to different temperatures at the same time. The heaters 111a to 111c are, for example, infrared radiation heaters, but the present invention is not limited thereto.

Please refer to FIG. 1, the air extraction device 14 is fluidly connected to the main cavity 10 to vacuum the main cavity 10. The air extraction device 14 is, for example, a vacuum pump, which can extract the gas in the main cavity 10 so as to maintain the pressure inside the main cavity 10 at a predetermined value. In addition, the air extraction device 14 is arranged under the main cavity 10, and can extract the precursor gas that is not adsorbed on the substrate S1 and the excess flushing gas. In addition, the vacuum device 1 of this embodiment further includes a pressure and temperature sensor 15. The pressure and temperature sensor 15 is disposed in the main cavity 10 and can detect the pressure and temperature in the main cavity 10.

Please refer to FIG. 1, the circulating epitaxial deposition system M1 of the embodiment of the present invention further includes a cooling device 16 arranged on the transport path. Accordingly, the substrate S1 conveyed from the coating cavity 11 can be guided to the cooling device 16. In this embodiment, the cooling device 16 is a roller provided with a cooling pipeline. The substrate S1 is conveyed from the coating chamber 11 to the cooling device 16 to be cooled, and then is wound by the second unwinding and unwinding module 13b, but the present invention is not limited to this. In other embodiments, the cooling device 16 may also be omitted.

Please refer to FIG. 1 and FIG. 2 together, the circulating epitaxial deposition system M1 of the embodiment of the present invention further includes a gas pipeline system 2, at least one precursor storage unit 3, 4, and inert gas storage unit 5, 6. The precursor storage units 3 and 4 can pass through the gas pipeline system 2 to supply the precursor gas to one of the precursor gas nozzles 110a and 110c. Similarly, the inert gas storage unit 5 can also pass through a gas pipeline system and supply flushing gas to the flushing gas nozzle 110b.

The precursor storage units 3 and 4 are used for storing precursors for reaction. In this embodiment, the cyclic epitaxial deposition system M1 includes a plurality of precursor storage units 3 and 4. In addition, the plurality of precursor storage units 3 and 4 include at least one of a gaseous precursor storage unit 3 and a liquid precursor storage unit 4.

In detail, the gaseous precursor storage unit 3 may include a plurality of gas cylinders 30 and 31 to store different precursor gases respectively. The liquid precursor storage unit 4 may include a plurality of storage tanks 40, 41, 42 for storing different liquid precursors. When the liquid precursor can be transformed into a gaseous state by heating, the precursor gas can be output to the gas distribution module 110. The inert gas storage unit 5 may include at least one gas cylinder to store inert gas.

The gas pipeline system 2 includes a plurality of gas main pipelines 20, 21, 22 and a plurality of gas branch pipelines 200, 210, 220. Each gas main pipeline 20, 21, 22 passes through a corresponding gas branch pipeline 200, 210, 220 to fluidly communicate with a plurality of corresponding precursor gas nozzles 110a, 110c or flushing gas nozzles 110b.

In detail, the multiple gas main pipelines 20, 21, 22 may include precursor gas main pipelines 20, 22 and inert gas main pipeline 21. The multiple gas distribution pipes 200, 210, and 220 can be divided into precursor gas distribution pipes 200, 220 and inert gas distribution pipe 210. Accordingly, the precursor gas main pipelines 20 and 22 are in fluid communication with the corresponding precursor gas branch pipelines 200 and 220, and the inert gas main pipeline 21 is in fluid communication with the corresponding inert gas branch pipeline 210.

The gas cylinders 30, 31 of the gaseous precursor storage unit 3 or the storage tanks 40, 41, 42 of the liquid precursor storage unit 4 are fluidly connected to the corresponding precursor gas main pipelines 20, 22 to transport the precursor gas. The precursor gas is delivered to the gas splitting module 110 through the corresponding precursor gas splitting pipelines 200 and 220. In this embodiment, the multiple precursor gas main pipelines 20 and 22 can respectively transport different precursor gases (the first precursor gas and the second precursor gas).

The gas cylinder of the inert gas storage unit 5 is fluidly connected to the inert gas main pipeline 21 to input the inert gas into the inert gas main pipeline 21. The inert gas passes through the inert gas distribution pipe 210 and flows to the gas distribution module 110.

1 and 2, in this embodiment, the gas pipeline system 2 further includes a plurality of main flow control valves 20a, 21a, 22a and a plurality of flow control valves 200a, 210a, 220a. Furthermore, the circulating epitaxial deposition system M1 includes a control module (not shown), and the control module is electrically connected to a plurality of main flow control valves 20a, 21a, 22a and a plurality of flow control valves 200a, 210a, 220a. As shown in FIG. 1, a plurality of main flow control valves 20a, 21a, 22a are respectively installed on the plurality of gas main pipelines 20-22. Through the control of the control module, a plurality of main flow control valves 20a, 21a, 22a can respectively control the flow of precursor gas or inert gas passing through the main gas pipelines 20-22.

As shown in Fig. 2, a plurality of flow dividing control valves 200a, 210a, and 220a are respectively arranged on the plurality of gas flow dividing lines 200, 210, and 220. Through the control of the control module, the multiple flow control valves 200a, 210a, 220a can independently control the flow of the precursor gas entering each precursor gas nozzle 110a, 110c, and the flow of the flushing gas entering the flushing gas nozzle 110b.

In one embodiment, for a specific area of the substrate S1, through the control of the shunt control valves 200a, 210a, 220a, the sequence of spraying the precursor gas and the flushing gas to the specific area in each coating cycle can be changed.

For example, for one of the gas splitting modules 110, of the two first precursor gas nozzles 110a, only one of the first precursor gas nozzles 110a will pass the first precursor gas, and the other first precursor gas nozzle 110a The first precursor gas will not be introduced into the substance gas nozzle 110a. Similarly, of the two second precursor gas nozzles 110c, only one of the second precursor gas nozzles 110c will pass the second precursor gas, while the other second precursor gas nozzle 110c will not be passed. Into the second precursor gas.

In this way, when the substrate S1 continuously passes under one of the gas distribution modules 110, a specific area of the substrate S1 will sequentially contact the first precursor gas, the flushing gas, the second precursor gas, and the flushing gas, thereby forming Another coating cycle.

In addition, the gas pipeline system 2 further includes a plurality of preheating elements 20b-22b respectively arranged on the plurality of gas main pipelines 20-22. In other words, each preheating element 20b-22b is respectively arranged on the corresponding main gas pipeline 20-22. The preheating elements 20b-22b are, for example, heating belts, which can heat the precursor gas passing through the main gas pipeline 20-22 to prevent the precursor gas from being condensed before entering the gas distribution module 110.

[Beneficial effects of the embodiment]

One of the beneficial effects of the present invention is that the cyclic epitaxial deposition system M1 provided by the present invention can be used to continuously transport a substrate S1 in and out of the coating chamber 11 along a transport path through the “conveying device 13” and "The gas distribution module 110 includes a plurality of precursor gas nozzles 110a, 110c and a plurality of flushing gas nozzles 110b which are not connected to each other, so as to guide at least one precursor gas and at least one flushing gas to the substrate S1 at the same time. The “different areas on the upper side” is a technical solution to continuously form a film layer on the substrate S1.

The cyclic epitaxial deposition system M1 provided by the present invention basically still uses the principle of atomic layer deposition to form a film. Compared with the existing atomic layer deposition equipment, the cyclic epitaxial deposition system M1 of the present invention can also accurately control the film thickness. The film formed by the circulating epitaxial deposition system M1 of the present invention also has the advantages of good uniformity and high step coverage. However, when the cyclic epitaxial deposition system M1 provided by the present invention is used to form a film, the deposition time can be shortened, and it is suitable for manufacturing components or devices that require mass production.

The content disclosed above is only a preferred and feasible embodiment of the present invention, and does not limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the description and schematic content of the present invention are included in the application of the present invention. Within the scope of the patent.

M1: Circulating epitaxy deposition system S1: substrate 1: vacuum equipment 10: main chamber 11: coating chamber 110: gas splitting module 110a: first precursor gas nozzle 110b: flushing gas nozzle 110c: second precursor Gas nozzle P1: first precursor gas distribution area P2: second precursor gas distribution area P3: flushing gas distribution area 111: heating module 111a~111c: heater 12: pretreatment chamber 120: plasma device 121 : Pre-treatment heating module 13: Conveying device 13a: First rewinding and unwinding module 13b: Second rewinding and unwinding module 14: Air extraction device 15: Pressure and temperature sensor 16: Cooling device 2: Gas pipeline system 20, 22: Precursor gas main pipeline 20a, 21a, 22a: Main flow control valve 20b, 21b, 22b: Preheating element 21: Inert gas main pipeline 200, 220: Precursor gas bypass pipeline 210: Inert gas Diversion pipeline 200a, 210a, 220a: Diversion control valve 3: Gaseous precursor storage unit 30, 31: Gas cylinder 4: Liquid precursor storage unit 40, 41, 42: Storage tank 5, 6: Inert gas storage unit d: Shortest vertical distance

Fig. 1 is a schematic diagram of the cyclic epitaxial deposition system of the present invention.

Fig. 2 is a schematic diagram of a gas distribution module according to an embodiment of the present invention.

M1: Circulating epitaxial deposition system

S1: Substrate

1: Vacuum equipment

10: Main cavity

11: Coating cavity

110: Gas splitter module

110a: First precursor gas nozzle

110b: flushing gas nozzle

110c: second precursor gas nozzle

111: Heating module

111a~111c: heater

12: Pretreatment chamber

120: Plasma device

121: Pre-treatment heating module

13: Conveying device

13a: The first retractable module

13b: The second retracting and unwinding module

14: Air extraction device

15: Pressure and temperature sensor

16: Cooling device

2: Gas pipeline system

20, 22: Main pipeline of precursor gas

200, 220: precursor gas shunt pipeline

210: Inert gas bypass line

20a, 21a, 22a: main flow control valve

20b, 21b, 22b: preheating element

21: Inert gas main pipeline

3: Gaseous precursor storage unit

30, 31: cylinder

4: Liquid precursor storage unit

40, 41, 42: storage tank

5, 6: Inert gas storage unit

Claims (16)

A cyclic epitaxial deposition system, comprising: a coating chamber; a conveying device for continuously conveying a substrate through the coating chamber along a transmission path; and a gas splitting module, which is arranged In the coating chamber and above the transmission path, wherein the gas distribution module includes a plurality of precursor gas nozzles and at least one flushing gas nozzle that are not connected to each other, so as to remove at least one precursor gas at the same time The gas and at least one flushing gas are respectively guided to different areas on the substrate. The circulating epitaxial deposition system as described in item 1 of the scope of patent application, wherein the conveying device includes a first retracting and unwinding module and a second retracting and unwinding module, and the first retracting and unwinding module The set is used to continuously transfer the substrate into the coating cavity, and the second unwinding and unwinding module is used to roll up the substrate transferred from the coating cavity. The circulating epitaxial deposition system as described in the first item of the scope of patent application further includes: a cooling device arranged on the transfer path to cool the substrate conveyed from the coating cavity . The cyclic epitaxial deposition system as described in item 1 of the scope of the patent application further includes: a heating module, which is arranged in the coating chamber and located below the transport path to heat the substrate . The cyclic epitaxial deposition system described in item 1 of the scope of patent application further includes: a pre-processing chamber and a plasma device located in the pre-processing chamber, wherein the pre-processing chamber and the The coating cavities are sequentially arranged on the transmission path according to a moving direction of the substrate, and are isolated from each other. The cyclic epitaxial deposition system described in item 5 of the scope of the patent application further includes: a pre-processing heating module, which is arranged in the pre-processing chamber and corresponds to the transport path, to align the substrate Material heating. According to the cyclic epitaxial deposition system described in claim 1, wherein the shortest vertical distance between a nozzle of each precursor gas nozzle and the surface of the substrate is between 0.1 cm and 2.0 between cm. According to the cyclic epitaxial deposition system described in claim 1, wherein the precursor gas passes through the corresponding precursor gas nozzle to form a precursor gas distribution area on the substrate, and two The two precursor gas distribution regions formed by the precursor gas nozzles on the substrate respectively do not overlap. The circulating epitaxial deposition system according to item 8 of the scope of patent application, wherein the flushing gas passes through the corresponding flushing gas nozzle to form a flushing gas distribution area above the substrate, and two At least one flushing gas distribution area is separated between the precursor gas distribution areas. The cyclic epitaxial deposition system according to claim 1, wherein the plurality of precursor gas nozzles include: a first precursor gas nozzle for guiding a first precursor gas and A second precursor gas nozzle for guiding a second precursor gas, the first precursor gas nozzle, the flushing gas nozzle, and the second precursor gas nozzle along a moving direction of the substrate They are sequentially arranged above the transmission path. The circulating epitaxial deposition system described in the first item of the scope of patent application further includes: a gas pipeline system including a plurality of gas main pipelines and a plurality of preheating elements, wherein each of the gas main pipelines The path is in fluid communication with at least one of the precursor nozzles or at least one of the flushing gas nozzles, and a plurality of the preheating elements are respectively arranged on the corresponding main gas pipelines. The cyclic epitaxial deposition system described in item 11 of the scope of patent application further includes: a precursor storage unit, wherein the plurality of main gas pipelines include at least one main precursor gas pipeline, and the precursor The precursor storage unit passes through the precursor gas main pipeline to supply the precursor gas to one of the precursor gas nozzles. According to the cyclic epitaxial deposition system described in claim 12, the precursor storage unit includes at least one of a gaseous precursor storage unit and a liquid precursor storage unit. According to the cyclic epitaxial deposition system described in claim 11, the gas pipeline system further includes: a plurality of gas branch pipelines, wherein each of the gas main pipelines passes through a plurality of The gas splitting pipeline is in fluid communication with the corresponding plurality of precursor gas nozzles or the flushing gas nozzles; and a plurality of splitting control valves are respectively arranged on the plurality of gas splitting pipelines to control the entry The flow rate of the precursor gas of the plurality of precursor gas nozzles, and the flow rate of the flushing gas entering the flushing gas nozzle. As described in item 11 of the scope of patent application, the circulating epitaxial deposition system further includes: an inert gas storage unit, wherein the plurality of gas main pipelines include at least one inert gas main pipeline, and the inert gas storage unit Through the inert gas main pipeline, an inert gas is supplied to one of the flushing gas nozzles. The circulating epitaxial deposition system according to item 15 of the scope of patent application, wherein the gas pipeline system further comprises: at least one inert gas bypass pipeline, wherein the inert gas main pipeline passes through a plurality of The inert gas distribution pipeline is in fluid communication with the corresponding plurality of flushing gas nozzles.

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